Resistor detection method and related equipment

Abstract

The invention provides a resistor detection method and related equipment. The method comprises the following steps: acquiring a plurality of groups of resistors; the resistor comprises a substrate, a first electrode layer and a barrier layer; the number of each group of resistors in the plurality of groups of resistors is the same; dividing the plurality of groups of resistors into two classes to obtain a first class of resistors and a second class of resistors; the group number of the first-class resistors is the same as that of the second-class resistors; piercing the barrier layer of the first-class resistor to obtain a target-class resistor; welding a second electrode layer into the target type resistor and the second type resistor; and comparing the detection target type resistor with the second type resistor to obtain a detection result. According to the invention, the influence on the resistor when the barrier layer has defects is simulated and verified, so that the reliability and durability of the resistor are evaluated more comprehensively, and defective products are further prevented from being generated.

Description

Technical Field

[0001] The present application relates to the field of component detection and analysis, and in particular to a resistor detection method and related equipment. Background Art

[0002] As a basic component of electronic components, the reliability of resistors directly affects the stability and life of electronic products. Although modern resistor production technology is becoming more and more mature and has undergone strict factory screening, there is still a problem of abnormally increased resistance in actual applications. This is due to the discontinuity of the terminal electrodes and the partial exposure of the ceramic matrix.

[0003] The resistor terminal electrode structure includes a palladium-silver electrode layer, a nickel barrier layer, and a tin-lead solderable layer. The nickel barrier layer acts as an isolation and barrier to prevent the palladium-silver from reacting with the tin-lead. However, if the nickel barrier layer is damaged or defective, the palladium-silver and tin-lead will react during high-temperature welding to form a eutectic, causing the palladium-silver electrode layer to disappear, the ceramic substrate to be exposed, and abnormal terminal electrode welding. Summary of the invention

[0004] In view of this, the purpose of the present application is to provide a resistor detection method and related equipment to solve or partially solve the above problems.

[0005] As one aspect of the present application, a resistor detection method is provided, comprising:

[0006] Obtain multiple groups of resistors; the resistors include a substrate, a first electrode layer, and a barrier layer; the number of resistors in each group of the multiple groups of resistors is the same;

[0007] Dividing the plurality of groups of resistors into two categories to obtain first-category resistors and second-category resistors; the number of groups of the first-category resistors and the second-category resistors is the same;

[0008] piercing the barrier layer of the first type of resistor to obtain a target type of resistor;

[0009] welding a second electrode layer into the target type resistor and the second type resistor;

[0010] The target type resistor and the second type resistor are compared and detected to obtain a detection result.

[0011] Optionally, piercing the barrier layer of the first type resistor to obtain the target type resistor includes: determining a plurality of points on a side of the barrier layer away from the substrate;

[0012] A mechanical needle with a diameter smaller than the first threshold is inserted from the plurality of points to pierce the barrier layer to obtain the target type resistor.

[0013] Optionally, the target class resistors and the second class resistors include a plurality of comparison subgroups,

[0014] The step of welding the second electrode layer to the target type resistor and the second type resistor comprises:

[0015] Determine the welding time and welding temperature of each group of resistors in the target type resistor and the second type resistor; the welding time is greater than a second threshold; the welding temperature of each group of resistors in the target type resistor is different and is in a linear increasing relationship; the welding temperature of each group of resistors in the second type resistor is different and is in a linear increasing relationship; the welding time and welding temperature of the resistors of each control subgroup in the multiple control subgroups are the same;

[0016] The second electrode layer is welded to the target type resistor and the second type resistor at a side of the barrier layer away from the substrate according to the welding time and the welding temperature.

[0017] Optionally, the comparative detection of the target type resistor and the second type resistor to obtain a detection result includes:

[0018] Taking photos to record the appearance of the target resistor and the second resistor;

[0019] According to the appearance photos of each control subgroup, the detection results of the target type resistor and the second type resistor are determined.

[0020] Optionally, the comparative detection of the target type resistor and the second type resistor to obtain a detection result includes:

[0021] Measuring the resistance values ​​of the target type resistor and the second type resistor;

[0022] According to the resistance value of each comparison subgroup, the detection results of the target type resistor and the second type resistor are determined.

[0023] Optionally, the comparative detection of the target type resistor and the second type resistor to obtain a detection result includes:

[0024] The target resistor and the second resistor are subjected to cross-section sampling; the piercing position is located at the cross section of the target resistor;

[0025] Scanning the cross section of each control subgroup using an electron microscope to determine the detection results of the target type resistor and the second type resistor.

[0026] Optionally, the barrier layer is a nickel barrier layer.

[0027] Optionally, the first electrode layer is a target silver electrode layer.

[0028] Optionally, the second electrode layer is a tin-lead solderable layer.

[0029] As a second aspect of the present application, a resistor is provided, comprising:

[0030] substrate;

[0031] A first electrode layer is disposed on the substrate;

[0032] A barrier layer, disposed on a side of the first electrode layer away from the substrate;

[0033] A second electrode layer is disposed on a side of the barrier layer away from the substrate;

[0034] Wherein, the barrier layer is configured to isolate the first electrode layer from the second electrode layer.

[0035] As a third aspect of the present application, a resistor detection device is provided, including: an acquisition module, a classification module, a processing module, a welding module and a detection module.

[0036] The acquisition module is used to acquire multiple groups of resistors; the resistors include a substrate, a first electrode layer and a barrier layer; the number of resistors in each group of the multiple groups of resistors is the same;

[0037] The classification module is used to classify the multiple groups of resistors into two categories to obtain first-category resistors and second-category resistors; the number of groups of the first-category resistors and the second-category resistors is the same;

[0038] The processing module is used to pierce the barrier layer of the first type of resistor to obtain a target type of resistor;

[0039] The welding module is used to weld the second electrode layer to the target type resistor and the second type resistor;

[0040] The detection module is used to compare and detect the target type resistor and the second type resistor to obtain a detection result.

[0041] Optionally, the processing module is specifically used to determine a plurality of points on a side of the barrier layer away from the substrate;

[0042] A mechanical needle with a diameter smaller than the first threshold is inserted from the plurality of points to pierce the barrier layer to obtain the target type resistor.

[0043] Optionally, the target resistor and the second resistor include a plurality of control subgroups, and the welding module is specifically used to: determine the welding time and welding temperature of each group of resistors in the target resistor and the second resistor; the welding time is greater than a second threshold; the welding temperature of each group of resistors in the target resistor is different and is in a linearly increasing relationship; the welding temperature of each group of resistors in the second resistor is different and is in a linearly increasing relationship; the welding time and welding temperature of the resistors of each control subgroup in the plurality of control subgroups are the same;

[0044] The second electrode layer is welded to the target type resistor and the second type resistor at a side of the barrier layer away from the substrate according to the welding time and the welding temperature.

[0045] Optionally, the detection module is specifically used to: take photos to record the appearance of the target type resistor and the second type resistor;

[0046] According to the appearance photos of each control subgroup, the detection results of the target type resistor and the second type resistor are determined.

[0047] Optionally, the detection module is specifically used to: measure the resistance values ​​of the target type resistor and the second type resistor;

[0048] According to the resistance value of each comparison subgroup, the detection results of the target type resistor and the second type resistor are determined.

[0049] Optionally, the detection module is specifically used to: perform cross-section sampling on the target type resistor and the second type resistor; the piercing position is located at the cross section of the target type resistor;

[0050] Scanning the cross section of each control subgroup using an electron microscope to determine the detection results of the target type resistor and the second type resistor.

[0051] Optionally, the barrier layer is a nickel barrier layer.

[0052] Optionally, the first electrode layer is a target silver electrode layer.

[0053] Optionally, the second electrode layer is a tin-lead solderable layer.

[0054] From the above, it can be seen that the resistor detection method and related equipment provided by the present application can fully simulate and verify the impact on the resistor caused by improper operation during sample mounting and welding, or when there are defects in the barrier layer itself, by piercing the barrier layer of the first type of resistor, so as to more comprehensively evaluate the reliability and durability of the resistor. After the second electrode layer is welded to the target type resistor and the second type resistor, by comparing and testing these two types of resistors, the impact of the piercing operation on the performance of the resistor can be intuitively seen. This comparative analysis method helps to deeply understand the working mechanism and failure mode of the resistor, thereby preventing the end electrode plating from falling off due to defects in the barrier layer. In addition, the cost of this solution is low, the operation is simple, and the popularity and practicality are improved.

[0055] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention, it can be implemented according to the contents of the specification. In order to make the above and other purposes, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] In order to more clearly illustrate the technical solutions in the present application or related technologies, the drawings required for use in the embodiments or related technical descriptions are briefly introduced below. Obviously, the drawings described below are only embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0057] Figure 1 A schematic diagram of the structure of a resistor provided in an embodiment of the present application;

[0058] Figure 2 A schematic diagram of a flow chart of a resistor detection method provided in an embodiment of the present application;

[0059] Figure 3 A schematic diagram of a flow chart of another resistor detection method provided in an embodiment of the present application;

[0060] Figure 4 A schematic diagram of a resistor detection device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0061] In order to make the purpose, technical solutions and advantages of the present application more clearly understood, the present application is further described in detail below in combination with specific embodiments and with reference to the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0062] It should be noted that, in the embodiments of the present application, words such as "exemplarily" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplarily" or "for example" in the embodiments of the present application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplarily" or "for example" is intended to present related concepts in a concrete way. Unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present application should have the usual meaning understood by people with ordinary skills in the field to which the present application belongs.

[0063] It should be noted that, unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present application should be the usual meanings understood by people with ordinary skills in the field to which the present application belongs. The "first", "second" and similar words used in the embodiments of the present application do not represent any order, quantity or importance, but are only used to distinguish different components. "Including" or "comprising" and similar words mean that the elements or objects appearing in front of the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0064] When describing some embodiments, the expressions "coupled" and "connected" and their derivatives may be used. The term "connected" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. The term "coupled" indicates, for example, that two or more components are in direct physical or electrical contact. The term "coupled" or "communicatively coupled" may also refer to two or more components that are not directly connected to each other, but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the contents of this document.

[0065] The terms "parallel", "perpendicular" and "equal" as used in the specification and claims of this application include the situations described and situations similar to the situations described, and the range of the similar situations is within an acceptable deviation range, wherein the acceptable deviation range is determined by a person of ordinary skill in the art taking into account the measurement being discussed and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range of approximate parallelism may be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range of approximate perpendicularity may also be, for example, a deviation within 5°. "Equal" includes absolute equality and approximate equality, wherein the acceptable deviation range of approximate equality may be, for example, that the difference between the two equals is less than or equal to 5% of either one.

[0066] It will be understood that when a layer or an element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present between the layer or element and the other layer or substrate.

[0067] Exemplary embodiments are described herein with reference to cross-sectional views and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of the layers and the area of ​​the regions are exaggerated for clarity. Therefore, variations in the shapes relative to the drawings due to, for example, manufacturing techniques and / or tolerances are conceivable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but include shape deviations due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shapes of the regions of the device, and are not intended to limit the scope of the exemplary embodiments.

[0068] Figure 1 This is a schematic diagram of the structure of a resistor provided in an embodiment of the present application. Figure 1 As shown, the resistor includes: a substrate 100; a first electrode layer 101, which is arranged on the substrate 100; a blocking layer 102, which is arranged on a side of the first electrode layer 101 away from the substrate 100; and a second electrode layer 103, which is arranged on a side of the blocking layer 102 away from the substrate 100; wherein the blocking layer 102 is configured to: isolate the first electrode layer 101 and the second electrode layer 103.

[0069] In some embodiments, the substrate 100 is an important component of the resistor, providing a support and attachment base for the resistor film and other functional layers. The material of the substrate 100 can be metal, plastic, ceramic, glass fiber, etc. Exemplarily, the ceramic substrate material includes beryllium oxide (BeO), aluminum oxide (AlO), aluminum nitride (AlN), etc.

[0070] In some embodiments, the first electrode layer 101 serves as the bottom electrode of the resistor. The first electrode layer 101 needs to have good conductivity and good adhesion to the substrate, and can be made of any one or more of metals such as copper (Cu), aluminum (Al), silver (Ag), gold (Au) and silver palladium (AgPd).

[0071] In some embodiments, the main function of the barrier layer 102 is to isolate the first electrode layer 101 and the second electrode layer 103 to prevent the first electrode layer 101 and the second electrode layer 103 from directly contacting and reacting to form a eutectic, which causes the electrodes to melt and fall off abnormally, and the substrate 100 is exposed. At the same time, the barrier layer 102 also needs to have certain chemical stability and thermal stability to withstand the temperature and chemical environment that the resistor may encounter during operation, and can be made of metals such as nickel (Ni), titanium (Ti), chromium (Cr), and nickel-chromium alloy (NiCr). These materials can effectively prevent the diffusion of metal atoms while maintaining good adhesion and chemical stability.

[0072] In some embodiments, the second electrode layer 103 needs to have good welding performance and conductivity in order to connect with other electronic components, and can be made of any one or more metals such as copper (Cu), aluminum (Al), silver (Ag), gold (Au) and tin-lead (SnPb).

[0073] In some examples, the substrate 100 is a ceramic substrate, the first electrode layer 101 is a target silver electrode layer, the barrier layer 102 is a nickel barrier layer, and the second electrode layer 103 is a tin-lead solderable layer. When the nickel barrier layer is damaged or defective, the high-temperature welding process may cause the inner electrode palladium silver to react with tin-lead to form a eutectic, thereby causing the palladium silver electrode layer coated on the substrate 100 to disappear, exposing the ceramic substrate, and causing abnormal end electrode welding.

[0074] Combine the following Figure 1 The resistor detection method according to the exemplary embodiment of the present application is described by using the application scenario. It should be noted that the above application scenario is only shown to facilitate understanding of the spirit and principle of the present application, and the implementation of the present application is not limited in this respect. On the contrary, the implementation of the present application can be applied to any applicable scenario.

[0075] Figure 2 A schematic diagram of a resistor detection method provided in an embodiment of the present application. Figure 2 As shown, the resistor detection method provided by the present application specifically includes the following steps:

[0076] S201, obtaining multiple groups of resistors.

[0077] The resistor includes a substrate, a first electrode layer and a barrier layer; and the number of resistors in each group of the multiple groups of resistors is the same.

[0078] In some embodiments, automated equipment, such as a robotic arm, is used to batch grab a certain number of resistors that have completed factory inspection, take photos of their appearance, test their resistance values, and record the test data. Further, they are grouped and stored in different inspection areas, with the same number of resistors in each group to ensure consistency and comparability of the inspection. For example, 20 resistors are selected, 2 in each group, for a total of 10 groups.

[0079] S202, dividing the plurality of groups of resistors into two categories to obtain first-category resistors and second-category resistors.

[0080] The number of groups of the first type of resistors and the number of groups of the second type of resistors are the same.

[0081] In some embodiments, the multiple groups of resistors obtained in S201 are equally divided into two categories, ensuring that the number of resistors in each group is equal and randomly allocated to reduce deviation. For example, the above 10 groups of resistors are divided into two categories, and the first category of resistors and the second category of resistors each include 5 groups of resistors.

[0082] It should be noted that the first type of resistors and the second type of resistors are control groups for each other.

[0083] S203, piercing the barrier layer of the first type of resistor to obtain a target type of resistor.

[0084] In some embodiments, the barrier layer can be pierced by using a precision laser device or a mechanical needle to expose a portion of the first electrode layer. After piercing, a high-definition camera is used to take a picture of the pierced position to record the specific location of the piercing and the damage to the barrier layer.

[0085] In some embodiments, a mechanical needle having a diameter smaller than the first threshold is inserted into the barrier layer from multiple points on the side away from the substrate to pierce the barrier layer to obtain a target resistor. Then, the piercing positions corresponding to the multiple points are photographed and recorded to ensure that the records are clear and convenient for subsequent comparison.

[0086] Exemplarily, a steel needle with an end diameter of 0.1 mm is used to pierce the front electrode of the device. The piercing force is set as needed to ensure that the barrier layer (nickel electrode) is pierced. Each resistor is pierced at 4 different points, and each resistor is visually inspected and the appearance of the pierced position (damage point) is photographed.

[0087] S204, welding the second electrode layer to the target type resistor and the second type resistor.

[0088] In some embodiments, a precision welding tool, such as a micro welding gun, is used to weld the second electrode layer to the barrier layer. At this time, the second electrode layer of the target resistor is in contact with the exposed first electrode layer due to damage to the barrier layer.

[0089] In some examples, when the substrate is a ceramic substrate, the first electrode layer is a target silver electrode layer, the barrier layer is a nickel barrier layer, and the second electrode layer is a tin-lead solderable layer, when the nickel barrier layer is damaged or defective, the high-temperature welding process may cause the inner electrode palladium silver to react with the tin-lead to form a eutectic, thereby causing the palladium silver electrode layer coated on the substrate to disappear, exposing the ceramic substrate, and abnormal end electrode welding.

[0090] In some embodiments, the target class resistors and the second class resistors include a plurality of comparison subgroups, such as Figure 3 As shown, S204 can be specifically implemented as follows S2041-S2042:

[0091] S2041. Determine the welding time and welding temperature of each group of resistors in the target type resistors and the second type resistors.

[0092] In some embodiments, the welding time is greater than a second threshold; the welding temperature of each group of resistors in the target type resistors is different and is in a linearly increasing relationship; the welding temperature of each group of resistors in the second type resistors is different and is in a linearly increasing relationship; the welding time and welding temperature of the resistors of each control subgroup in multiple control subgroups are the same.

[0093] In some examples, the target class resistor and the second class resistor include 5 control subgroups, and each control subgroup selects one group from each of the target class resistor and the second class resistor. The welding temperature is set to T, and the welding time is t. The welding conditions are as follows: the welding time of each group is 60s or t, wherein the welding time selects the maximum value of 60s or t. The welding temperature of the first control subgroup is T; the welding temperature of the second control subgroup is T+15°C; the welding temperature of the third control subgroup is T+30°C; the welding temperature of the fourth control subgroup is T+45°C; and the welding temperature of the fifth control subgroup is T+60°C.

[0094] S2042, welding the second electrode layer to the target type resistor and the barrier layer of the second type resistor away from the substrate according to the welding time and welding temperature.

[0095] In some embodiments, according to the welding time and welding temperature set for each group in S2041, a precise temperature controller and a timer can be used to ensure that the welding time and temperature of each group of resistors meet the predetermined conditions, and then the second electrode layer is welded to the barrier layer of the resistor using a welding device, for example, using tin-lead solder paste to evenly coat the electrodes of the resistor and the welding points of the printed circuit board. By accurately controlling the welding time and temperature, the consistency and repeatability of the welding process can be ensured, thereby improving the reliability of the resistor.

[0096] S205 , comparing the target resistor and the second resistor to obtain a detection result.

[0097] In some embodiments, the target type resistor and the second type resistor can be compared and inspected in a variety of ways, for example, using a resistance tester to measure the resistance values ​​of the two types of resistors and compare their resistance changes; using a visual inspection system to observe the welding quality and appearance differences of the two types of resistors; performing environmental stress tests such as high temperature, humidity, mechanical vibration, etc. to evaluate the performance differences between the two types of resistors under actual use conditions; using advanced analysis tools such as scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS) to analyze the microstructure and material composition of the resistor to identify potential defects and damage.

[0098] In some embodiments, the appearance of the target resistor and the second resistor is recorded by taking photos, and the detection results of the target resistor and the second resistor are determined based on the appearance photos of each control subgroup. For example, a camera or other image capture device is used to take photos of the appearance of the resistor, and based on the appearance photos, the resistor is checked for abnormal conditions such as electrode shedding and substrate exposure.

[0099] In some embodiments, the resistance values ​​of the target class resistors and the second class resistors are measured, and the detection results of the target class resistors and the second class resistors are determined according to the resistance values ​​of each comparison subgroup. For example, a resistance measuring instrument (such as a multimeter) is used to measure the resistance value of each resistor, and the data is recorded, and the detection results of the target class resistors and the second class resistors are determined according to the resistance value of each comparison subgroup. The changes in their resistance values ​​are compared to evaluate the electrical performance and consistency of the resistors.

[0100] In some embodiments, the target resistor and the second resistor are cross-sectioned, wherein the puncture position is located in the cross section of the target resistor, and the cross section of each control subgroup is scanned by electron microscopy to determine the test results of the target resistor and the second resistor. For example, the cross-section sample of the resistor is prepared by cutting, grinding, etc., and then the cross section is inspected using advanced analysis tools such as scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS) to observe the morphology, thickness, uniformity, and presence of abnormalities such as cracks and peeling of the terminal electrode plating of the target resistor and the second resistor.

[0101] In summary, the disclosed embodiment provides a resistor detection method, which can fully simulate and verify the impact on the resistor caused by improper operation during sample mounting and welding, or when there are defects in the barrier layer itself, by piercing the barrier layer of the first type of resistor, so as to more comprehensively evaluate the reliability and durability of the resistor. After the second electrode layer is welded to the target type resistor and the second type resistor, the impact of the piercing operation on the resistor performance can be intuitively seen by comparing and testing these two types of resistors. This comparative analysis method helps to deeply understand the working mechanism and failure mode of the resistor, thereby preventing the end electrode plating from falling off due to defects in the barrier layer. In addition, the cost of this solution is low, the operation is simple, and the popularity and practicality are improved.

[0102] It should be noted that the above describes some embodiments of the present application. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recorded in the claims can be performed in an order different from that in the above embodiments and still achieve the desired results. In addition, the processes depicted in the accompanying drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0103] Based on the same inventive concept, corresponding to any of the above-mentioned embodiment methods, the present application also provides a data enhancement device based on federated reinforcement learning.

[0104] refer to Figure 4 The resistor detection device includes: an acquisition module 401, a classification module 402, a processing module 403, a welding module 404 and a detection module 405.

[0105] The acquisition module 401 is used to acquire multiple groups of resistors; the resistors include a substrate, a first electrode layer and a barrier layer; the number of resistors in each group of the multiple groups of resistors is the same;

[0106] The classification module 402 is used to classify the plurality of groups of resistors into two categories to obtain first-category resistors and second-category resistors; the number of groups of the first-category resistors and the second-category resistors is the same;

[0107] The processing module 403 is used to pierce the barrier layer of the first type of resistor to obtain a target type of resistor;

[0108] The welding module 404 is used to weld the second electrode layer to the target type resistor and the second type resistor;

[0109] The detection module 405 is used to compare and detect the target type resistor and the second type resistor to obtain a detection result.

[0110] In some embodiments, the processing module 403 is specifically used to:

[0111] determining a plurality of points on a side of the barrier layer away from the substrate;

[0112] A mechanical needle with a diameter smaller than the first threshold is inserted from the plurality of points to pierce the barrier layer to obtain the target type resistor.

[0113] In some embodiments, the target resistor and the second resistor include a plurality of control subgroups, and the welding module 404 is specifically used to: determine the welding time and welding temperature of each group of resistors in the target resistor and the second resistor; the welding time is greater than a second threshold; the welding temperature of each group of resistors in the target resistor is different and is in a linearly increasing relationship; the welding temperature of each group of resistors in the second resistor is different and is in a linearly increasing relationship; the welding time and welding temperature of the resistors of each control subgroup in the plurality of control subgroups are the same;

[0114] The second electrode layer is welded to the target type resistor and the second type resistor at a side of the barrier layer away from the substrate according to the welding time and the welding temperature.

[0115] In some embodiments, the detection module 405 is specifically used to: take photos to record the appearance of the target type resistor and the second type resistor;

[0116] According to the appearance photos of each control subgroup, the detection results of the target type resistor and the second type resistor are determined.

[0117] In some embodiments, the detection module 405 is specifically used to: measure the resistance values ​​of the target type resistor and the second type resistor;

[0118] According to the resistance value of each comparison subgroup, the detection results of the target type resistor and the second type resistor are determined.

[0119] In some embodiments, the detection module 405 is specifically used to: perform cross-section sampling on the target resistor and the second resistor; the piercing position is located at the cross section of the target resistor;

[0120] Scanning the cross section of each control subgroup using an electron microscope to determine the detection results of the target type resistor and the second type resistor.

[0121] In some embodiments, the barrier layer is a nickel barrier layer.

[0122] In some embodiments, the first electrode layer is a target silver electrode layer.

[0123] In some embodiments, the second electrode layer is a tin-lead solderable layer.

[0124] Those skilled in the art should understand that the discussion of any of the above embodiments is merely illustrative and is not intended to imply that the scope of the present application (including the claims) is limited to these examples. In line with the concept of the present application, the technical features in the above embodiments or different embodiments may be combined, the steps may be implemented in any order, and there are many other variations of the different aspects of the embodiments of the present application as described above, which are not provided in detail for the sake of simplicity.

[0125] In addition, to simplify the description and discussion, and in order not to make the embodiments of the present application difficult to understand, the known power supply / ground connection with the integrated circuit (IC) chip and other components may or may not be shown in the provided drawings. In addition, the device can be shown in the form of a block diagram to avoid making the embodiments of the present application difficult to understand, and this also takes into account the fact that the details of the implementation of these block diagram devices are highly dependent on the platform to be implemented in the embodiments of the present application (that is, these details should be fully within the scope of understanding of those skilled in the art). In the case of elaborating specific details (e.g., circuits) to describe exemplary embodiments of the present application, it is obvious to those skilled in the art that the embodiments of the present application can be implemented without these specific details or when these specific details are changed. Therefore, these descriptions should be considered to be illustrative rather than restrictive.

[0126] Although the present application has been described in conjunction with specific embodiments of the present application, many replacements, modifications and variations of these embodiments will be apparent to those skilled in the art from the foregoing description. For example, other memory architectures (e.g., dynamic RAM (DRAM)) may use the embodiments discussed.

[0127] The embodiments of the present application are intended to cover all such substitutions, modifications and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the embodiments of the present application should be included in the scope of protection of the present application.

Claims

1. A resistor detection method, characterized in that: The method comprises: Obtain multiple groups of resistors; the resistors include a substrate, a first electrode layer, and a barrier layer; the number of resistors in each group of the multiple groups of resistors is the same; Dividing the plurality of groups of resistors into two categories to obtain first-category resistors and second-category resistors; the number of groups of the first-category resistors and the second-category resistors is the same; piercing the barrier layer of the first type of resistor to obtain a target type of resistor; welding a second electrode layer into the target type resistor and the second type resistor; The target type resistor and the second type resistor are compared and detected to obtain a detection result.

2. The method according to claim 1, wherein piercing the barrier layer of the first type resistor to obtain the target type resistor comprises: determining a plurality of points on a side of the barrier layer away from the substrate; A mechanical needle with a diameter smaller than the first threshold is inserted from the plurality of points to pierce the barrier layer to obtain the target type resistor.

3. The method according to claim 1, wherein the target class resistor and the second class resistor comprise a plurality of comparison subgroups, The step of welding the second electrode layer to the target type resistor and the second type resistor comprises: Determine the welding time and welding temperature of each group of resistors in the target type resistor and the second type resistor; the welding time is greater than a second threshold; The welding temperature of each group of resistors in the target type resistors is different and is in a linear increasing relationship; the welding temperature of each group of resistors in the second type resistors is different and is in a linear increasing relationship; the welding time and welding temperature of the resistors of each control subgroup in the multiple control subgroups are the same; The second electrode layer is welded to the target type resistor and the second type resistor at a side of the barrier layer away from the substrate according to the welding time and the welding temperature.

4. The method according to claim 3, wherein the comparative detection of the target type resistor and the second type resistor to obtain a detection result comprises: Taking photos to record the appearance of the target resistor and the second resistor; According to the appearance photos of each control subgroup, the detection results of the target type resistor and the second type resistor are determined.

5. The method according to claim 4, wherein the comparative detection of the target type resistor and the second type resistor to obtain a detection result comprises: Measuring the resistance values ​​of the target type resistor and the second type resistor; According to the resistance value of each comparison subgroup, the detection results of the target type resistor and the second type resistor are determined.

6. The method according to claim 5, wherein the comparative detection of the target type resistor and the second type resistor to obtain a detection result comprises: Performing cross-section sampling on the target type resistor and the second type resistor; The piercing position is located at a cross section of the target resistor; Scanning the cross section of each control subgroup using an electron microscope to determine the detection results of the target type resistor and the second type resistor.

7. The method according to any one of claims 1 to 6, characterized in that: The barrier layer is a nickel barrier layer.

8. The method according to any one of claims 1 to 6, characterized in that: The first electrode layer is a target silver electrode layer.

9. The method according to any one of claims 1 to 6, characterized in that: The second electrode layer is a tin-lead solderable layer.

10. A resistor, characterized in that: include: substrate; A first electrode layer is disposed on the substrate; A barrier layer, disposed on a side of the first electrode layer away from the substrate; A second electrode layer is disposed on a side of the barrier layer away from the substrate; Wherein, the barrier layer is configured to isolate the first electrode layer from the second electrode layer.

Images