Dielectric substance window and semiconductor equipment

Abstract

The invention provides a dielectric substance window and semiconductor equipment, and the window comprises a dielectric substance layer which comprises an opening penetrating through the dielectric substance layer; and the first heating assembly is embedded in the dielectric substance layer, and the first heating assembly is arranged around the opening hole. According to the technical scheme provided by the invention, the first heating assembly is embedded in the dielectric substance layer, and then the dielectric substance layer is controlled to be heated from inside to outside after the first heating assembly is electrified, so that the heating efficiency of the dielectric substance window can be improved, and the heating efficiency of the dielectric substance window can be improved by arranging the first heating assembly around the opening; the temperature distribution uniformity of the surface of the dielectric substance window can be obviously improved, so that the stability of the plasma etching process is improved, and the problems of particle pollution and trace element pollution to the reaction cavity caused by non-uniform heating of the dielectric substance window are avoided.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and more specifically, to a dielectric window and a semiconductor equipment. Background Art

[0002] In an inductively coupled plasma (ICP) reaction chamber, the electromagnetic coupling oscillation of the ceramic window or the inductive antenna on the back of the dielectric window penetrates the ceramic window to excite the reaction gas in the reaction chamber to form plasma, thereby achieving the purpose of plasma etching of the wafer. In a plasma etching system, the ceramic window is a key component and isolation interface between the reaction chamber and the inductive antenna. The ceramic window with the inductive antenna is combined with the gas nozzle to form the upper electrode in the reaction chamber of the plasma etching equipment, and also serves as a gas distribution plate to transport the reaction gas into the reaction chamber. Generally, the ceramic window is made of a high-purity alumina plate, which has the characteristics of hardness and structural stability. In addition, the surface of the ceramic window in contact with the reaction chamber is coated with a plasma etching resistant coating, such as Y2O3, YF3, etc., to prevent or weaken the etching of the ceramic window by the plasma, and reduce or eliminate the problem of contamination of the reaction chamber caused by the plasma. In the plasma etching process, the ceramic window needs to be heated to achieve a more stable process, but the existing ceramic window is heated by a heater set on the back of the ceramic window. Since the thickness of the ceramic window is often more than 25 mm, the heating of the other working surface of the ceramic window by the ceramic window back heater has performance defects such as low heating efficiency and uneven temperature distribution. Due to the uneven temperature distribution on the surface of the ceramic window, the plasma etching process will induce uneven polymer deposition on the surface of the ceramic window, thereby causing trace element or particle contamination and reducing the production yield of the etching process. Summary of the invention

[0003] In view of this, the present invention provides a dielectric window and a semiconductor device, which effectively solve the existing technical problems, can not only improve the heating efficiency of the dielectric window, but also significantly improve the temperature distribution uniformity on the surface of the dielectric window, thereby improving the stability of the plasma etching process while avoiding the problem of particle contamination and trace element contamination of the reaction chamber caused by the uneven heating of the dielectric window.

[0004] To achieve the above purpose, the technical solution provided by the present invention is as follows:

[0005] A dielectric window, applied to a semiconductor device, comprising:

[0006] a dielectric layer, the dielectric layer comprising an opening extending through the dielectric layer;

[0007] The first heating component is embedded in the dielectric layer and is disposed around the opening.

[0008] Optionally, the dielectric window further includes:

[0009] From the second heating element to the Nth heating element, the i-th heating element is embedded in the dielectric layer, and the i-th heating element is arranged around the i-1th heating element, N is an integer greater than 1, and i is an integer greater than 1 and not greater than N.

[0010] Optionally, in a direction perpendicular to the surface where the dielectric layer is located, and among the first heating component to the Nth heating component, the distances between different heating components and the same plane are different.

[0011] Optionally, the dielectric layer comprises a heating surface facing the reaction chamber of the semiconductor device;

[0012] The distance between the jth heating component and the heating surface is greater than the distance between the j+1th heating component and the heating surface, and j is an integer not less than 1 and less than N.

[0013] Optionally, the dielectric layer includes a first sub-dielectric layer to an N+1th sub-dielectric layer, the jth heating component is located between the jth sub-dielectric layer and the j+1th sub-dielectric layer, and j is an integer not less than 1 and less than N.

[0014] Optionally, the jth dielectric sub-layer or the j+1th dielectric sub-layer comprises a groove, and the jth heating component is located in the groove.

[0015] Optionally, in the first sub-dielectric layer to the N+1th sub-dielectric layer, all sub-dielectric layers are made of the same material;

[0016] Alternatively, among the first to N+1th sub-dielectric layers, a material of at least one sub-dielectric layer is different from that of the other sub-dielectric layers.

[0017] Optionally, in the first sub-dielectric layer to the N+1th sub-dielectric layer, the material of any sub-dielectric layer includes at least one of Al2O3, YAG, YOF and Y2O3.

[0018] Optionally, at least one of the first heating component to the Nth heating component includes a heating wire.

[0019] Optionally, the heating wire is made of metal, alloy or ceramic;

[0020] Alternatively, the heating wire includes a first conductive layer, a conductive core layer located on the first conductive layer, and a second conductive layer covering the conductive core layer, and the high temperature oxidation resistance of the materials of the first conductive layer and the second conductive layer is greater than the high temperature oxidation resistance of the material of the conductive core layer.

[0021] Optionally, the dielectric window further includes:

[0022] The first terminal to the Nth terminal, the kth terminal is connected to the kth heating component, wherein the kth terminal is embedded in the dielectric layer, and the kth terminal includes a portion exposed outside the dielectric layer, and k is an integer not less than 1 and not greater than N.

[0023] Optionally, the kth terminal includes:

[0024] A connecting wire and an external pin, wherein the connecting wire is embedded in the dielectric layer and connected to the kth heating component, and the connecting wire includes a filling groove on the side away from the connection end with the kth heating component; the external pin is filled in the filling groove, and the external pin is exposed outside the dielectric layer.

[0025] Optionally, the high temperature oxidation resistance of the material of the connecting wire is greater than the high temperature oxidation resistance of the material of the external pin;

[0026] And the resistance of the material of the connecting wire is greater than the resistance of the material of the external pin.

[0027] Optionally, the dielectric layer includes a heating surface facing the reaction chamber of the semiconductor device, wherein the dielectric window further includes:

[0028] A dense film covers the heating surface.

[0029] Optionally, the thickness of the dense film ranges from 0.5 to 500 μm.

[0030] Optionally, the dielectric window further includes:

[0031] A protective film covering the exposed surface of the dielectric layer, wherein the dense film is located on one side of the heating surface of the dielectric layer, and the dense film is located on a side of the protective film away from the heating surface.

[0032] Optionally, the protective film has a thickness ranging from 0.5 to 500 μm.

[0033] Optionally, the protective film includes:

[0034] A plurality of sub-protective films are formed sequentially, wherein, among the plurality of sub-protective films, the initial sub-protective film covers the exposed surface of the dielectric layer, and the subsequent sub-protective film covers the exposed surface of the previous sub-protective film.

[0035] Optionally, the protective film includes:

[0036] An amorphous aluminum oxide sub-protective film and an yttrium oxide sub-protective film are formed in sequence;

[0037] Alternatively, an amorphous aluminum oxide sub-protective film, a crystalline aluminum oxide sub-protective film and a yttrium oxide sub-protective film are formed in sequence.

[0038] Optionally, the material of any one of the protective film and the dense film includes at least one of Al2O3, Y2O3, YF3, YOF, ZrO2, Er2O3, SiC, SiO2, HfO2, Si3N4, AlN, B2O3, Nd2O3, Nb2O5, CeO2, Sm2O3, Yb2O3, YAG, EAG, YAM, YAP, EAM, and EAP.

[0039] Correspondingly, the present invention further provides a semiconductor device, which includes the above-mentioned dielectric window.

[0040] Optionally, the semiconductor device is a plasma etching device.

[0041] Compared with the prior art, the technical solution provided by the present invention has at least the following advantages:

[0042] The present invention provides a dielectric window and semiconductor equipment, comprising: a dielectric layer, the dielectric layer comprising an opening penetrating the dielectric layer; a first heating component, the first heating component being embedded in the dielectric layer, and the first heating component being arranged around the opening. It can be seen that the technical solution provided by the present invention embeds the first heating component inside the dielectric layer, and then after the first heating component is powered on, controls the dielectric layer to be heated from the inside to the outside, which can not only improve the heating efficiency of the dielectric window, but also significantly improve the uniformity of the temperature distribution on the surface of the dielectric window by arranging the first heating component around the opening, thereby improving the stability of the plasma etching process while avoiding the problem of particle contamination and trace element contamination of the reaction chamber caused by uneven heating of the dielectric window. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.

[0044] Figure 1 A schematic structural diagram of a dielectric window provided by an embodiment of the present invention;

[0045] Figure 2 for Figure 1 Section view along AA' direction;

[0046] Figure 3 A schematic structural diagram of another dielectric window provided by an embodiment of the present invention;

[0047] Figure 4 A schematic structural diagram of another dielectric window provided in an embodiment of the present invention;

[0048] Figure 5 A schematic structural diagram of another dielectric window provided in an embodiment of the present invention;

[0049] Figure 6 A schematic structural diagram of another dielectric window provided in an embodiment of the present invention;

[0050] Figure 7 A schematic structural diagram of another dielectric window provided in an embodiment of the present invention;

[0051] Figure 8 A schematic structural diagram of another dielectric window provided in an embodiment of the present invention;

[0052] Fig. 9 A schematic structural diagram of another dielectric window provided in an embodiment of the present invention;

[0053] Fig.10 A schematic structural diagram of another dielectric window provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0054] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0055] As described in the background art, in the plasma etching process, the ceramic window needs to be heated to achieve a more stable process, but the existing heating efficiency of the ceramic window is low.

[0056] Based on this, an embodiment of the present invention provides a dielectric window and a semiconductor device, which effectively solve the existing technical problems. It can not only improve the heating efficiency of the dielectric window, but also significantly improve the temperature distribution uniformity on the surface of the dielectric window, thereby improving the stability of the plasma etching process while avoiding the problem of particle contamination and trace element contamination of the reaction chamber caused by uneven heating of the dielectric window.

[0057] To achieve the above purpose, the technical solution provided by the embodiment of the present invention is as follows, specifically combined with Figures 1 to 10 The technical solution provided by the embodiment of the present invention is described in detail.

[0058] Combination Figure 1 and Figure 2 As shown, Figure 1 A schematic diagram of the structure of a dielectric window provided in an embodiment of the present invention, Figure 2 for Figure 1 The cross-sectional view along the AA' direction in FIG. The dielectric window is applied to semiconductor devices, and the dielectric window includes:

[0059] The dielectric layer 100 includes an opening 110 penetrating the dielectric layer.

[0060] The first heating component 201 is embedded in the dielectric layer 100 and is disposed around the opening 110 , wherein the opening of the first heating component 201 is used to connect to a power source.

[0061] It should be noted that the semiconductor device provided in the embodiment of the present invention includes an inductor antenna and a reaction chamber, the inductor antenna is used to generate electromagnetic coupling oscillation, and the reaction chamber is used to perform plasma treatment on the substrate. A dielectric window is arranged between the inductor antenna and the reaction chamber to isolate the two. An opening is arranged in the dielectric window, and the opening is connected to the gas nozzle of the semiconductor device. In addition, the semiconductor device also includes a component structure such as an electrostatic chuck, which is the same as the prior art, so no unnecessary elaboration is made.

[0062] It can be understood that the technical solution provided by the embodiment of the present invention embeds the first heating component inside the dielectric layer, and then after the first heating component is powered on, controls the dielectric layer to be heated from the inside to the outside, which can not only improve the heating efficiency of the dielectric window, but also significantly improve the uniformity of temperature distribution on the surface of the dielectric window by arranging the first heating component around the opening and optimizing the distance between the first heating component and the opening, thereby improving the stability of the plasma etching process while avoiding the problem of particle contamination and trace element contamination of the reaction chamber caused by uneven heating of the dielectric window.

[0063] In order to further improve the heating efficiency of the dielectric window and improve the heating uniformity of each area of ​​the dielectric window, the dielectric window provided by the embodiment of the present invention may further include more heating components. Figure 3 FIG. 2 is a schematic diagram of another dielectric window provided in an embodiment of the present invention. It should be noted that the following figures are all described by taking the dielectric window including the first heating component 201 and the second heating component 202 as an example. The dielectric window also includes:

[0064] The second heating element 202 to the Nth heating element, the i-th heating element is embedded in the dielectric layer, and the i-th heating element is arranged around the i-1th heating element (eg Figure 3 As shown, the first heating component 201 is arranged around the opening 110, and the second heating component 202 is arranged around the first heating component 201, and the openings of the first heating component 201 and the second heating component 202 are used to connect to their respective power sources), N is an integer greater than 1, and i is an integer greater than 1 and not greater than N.

[0065] It can be understood that the embodiment of the present invention increases the heating radiation area of ​​the heating components by arranging more heating components in the dielectric layer, thereby further improving the heating efficiency of the dielectric window. In addition, arranging multiple heating components in a surrounding and nested manner can improve the heating uniformity of each area of ​​the dielectric window, ensure high temperature uniformity of each area of ​​the dielectric window, further improve the stability of the plasma etching process, and reduce the risk of trace element and particle contamination.

[0066] Optionally, the surrounding manner of the heating component provided in the embodiment of the present invention can be any regular or irregular shape such as circular, elliptical, polygonal, etc. The present invention does not make specific limitations on this, and needs to be specifically designed according to actual applications to achieve the best heating effect.

[0067] refer to Figure 4, which is a schematic diagram of the structure of another dielectric window provided by an embodiment of the present invention, wherein in the direction X perpendicular to the surface where the dielectric layer 100 is located, and in the first heating component 201 to the Nth heating component, the distances between different heating components and the same plane are different. Figure 4 As shown, the distance b1 from the first heating component 201 to the plane B is different from the distance b2 from the second heating component 202 to the plane B.

[0068] It can be understood that the embodiment of the present invention sets the distances between different heating components and the same plane to be different, and then optimizes the positions of different heating components in the dielectric layer to achieve the purpose of adjusting the heating efficiency of different areas of the dielectric window, thereby optimizing the temperature control effect of the dielectric window.

[0069] Further references Figure 5 , which is a schematic diagram of the structure of another dielectric window provided by an embodiment of the present invention, wherein the dielectric layer 100 includes a heating surface 120 facing the reaction chamber of the semiconductor device, that is, the heating surface 120 is the surface of the dielectric layer 100 facing the reaction chamber. The distance between the jth heating component and the heating surface 120 is greater than the distance between the j+1th heating component and the heating surface 120, and j is an integer not less than 1 and less than N. Figure 5 As shown, in the direction X, the distance b11 between the first heating component 201 and the heating surface 120 provided by the embodiment of the present invention is greater than the distance b22 between the second heating component 202 and the heating surface 120 .

[0070] It can be understood that the area of ​​the dielectric window close to the opening provided in the embodiment of the present invention is closer to the center of the reaction chamber of the plasma etcher. Since the plasma density generated in the area closer to the opening is higher, the heating effect of the plasma on the surface of the dielectric window is greater, and it is easy to be heated by the plasma. Therefore, the distance between the first heating component close to the opening and the heating surface is set to a larger value to slow down the heat transfer efficiency of the first heating component to the area relative to the heating surface; at the same time, since the plasma density is weaker in the area farther from the central opening, the heating effect on the surface of the dielectric window is smaller. Therefore, the distance between the second heating component far from the opening and the heating surface is set to a smaller value to increase the heat transfer efficiency of the second heating component to the area relative to the heating surface, thereby ultimately achieving the purpose of balancing the heating efficiency of different areas of the heating surface and improving the heating and temperature control effects of the dielectric window.

[0071] refer to Figure 6, which is a schematic structural diagram of another dielectric window provided by an embodiment of the present invention, wherein the dielectric layer 100 includes a first sub-dielectric layer 101 to an N+1th sub-dielectric layer, and the jth heating component is located between the jth sub-dielectric layer and the j+1th sub-dielectric layer, where j is an integer not less than 1 and less than N. As shown in the figure, the first heating component 201 is located between the first sub-dielectric layer 101 and the second sub-dielectric layer 102, and the second heating component 202 is located between the second sub-dielectric layer 102 and the third sub-dielectric layer 103.

[0072] It is understandable that the dielectric layer provided in the embodiment of the present invention can be formed by pressing and sintering multiple sub-dielectric layers after the heating component is prepared between two adjacent sub-dielectric layers. Optionally, in the first sub-dielectric layer to the Nth sub-dielectric layer provided in the embodiment of the present invention, when different materials are selected for different sub-dielectric layers, when selecting the material of the sub-dielectric layer, it is preferred that the thermal expansion coefficients of all sub-dielectric layers are similar to avoid cracking or breaking during the pressing and sintering process of the dielectric layer.

[0073] In addition, the first sub-dielectric layer provided in the embodiment of the present invention is located on the side close to the reaction chamber, and the N+1th sub-dielectric layer is located on the side away from the reaction chamber. Preferably, the embodiment of the present invention sets the plasma etching resistance of the first sub-dielectric layer to be greater than the plasma etching resistance of the remaining sub-dielectric layers, so that the dielectric window can better resist the etching of the plasma in the reaction chamber, thereby improving the performance of the dielectric window.

[0074] In one embodiment of the present invention, the j-th sub-dielectric layer or the j+1-th sub-dielectric layer provided in the embodiment of the present invention includes a groove, and the j-th heating component is located in the groove. Specifically, after the sub-dielectric layer is formed, a groove of a set shape and size is formed on the sub-dielectric layer, and then a heating component is formed in the groove by a process such as coating, printing or printing, so as to facilitate the preparation of the heating component. Alternatively, no groove is formed on the sub-dielectric layer provided in the embodiment of the present invention, and the heating component is formed on the surface of the sub-dielectric layer by a process such as coating, printing or printing, and the embodiment of the present invention does not make any specific restrictions on this.

[0075] In one embodiment of the present invention, in the first sub-dielectric layer to the N+1th sub-dielectric layer provided in the embodiment of the present invention, the material of all sub-dielectric layers is the same; or, in the first sub-dielectric layer to the N+1th sub-dielectric layer, the material of at least one sub-dielectric layer is different from the materials of other sub-dielectric layers. Optionally, in the first sub-dielectric layer to the N+1th sub-dielectric layer, the material of any sub-dielectric layer includes at least one of Al2O3, YAG, YOF and Y2O3.

[0076] Optionally, taking the case where the material of the sub-dielectric layer provided in the embodiment of the present invention is a ceramic material, when preparing the dielectric layer, ceramic powders of the same material or different materials can be selected to be pressed into multiple sub-dielectric layers, and then the multiple sub-dielectric layers are pressurized and sintered by a conventional ceramic sintering process to form a dielectric layer. Specifically, after the ceramic powder is pressed into a ceramic plate, it can be mechanically cut into a sub-dielectric layer with a set shape and size requirements. Among them, when different ceramic powders are selected to form different sub-dielectric layers, the sub-dielectric layer in contact with the reaction chamber uses a ceramic powder resistant to plasma etching, such as YAG, Y2O3, etc., so that the dielectric layer formed by pressing and sintering can resist the corrosion of plasma and has higher stability. In addition, when different ceramic powders are selected to form different sub-dielectric layers, the selection of ceramic powders needs to satisfy the small difference in thermal expansion coefficients between different sub-dielectric layers, so as to avoid cracking or breaking when multiple sub-dielectric layers are pressed and sintered to form a dielectric layer. For example, at least one of Al2O3, YAG, YOF and Y2O3 provided in the embodiment of the present invention is selected. Since the thermal expansion coefficients of Al2O3, YAG and YOF, Y2O3 are similar, the formed dielectric layer is not prone to cracking and damage. The sintering of the dielectric layer can be carried out in a conventional sintering device for preparing Al2O3 ceramics, and the sintering temperature range is 1150-1950°C.

[0077] In one embodiment of the present invention, at least one of the first heating component to the Nth heating component provided in the embodiment of the present invention comprises a heating wire, and then the heating wire is energized to generate heat to heat the dielectric window. In addition, in other embodiments of the present invention, the heating component provided by the present invention may also be other types of heaters, which are not specifically limited by the present invention.

[0078] Optionally, the heating wire is made of metal, alloy or ceramic; or, the heating wire includes a first conductive layer, a conductive core layer located on the first conductive layer and a second conductive layer covering the conductive core layer, and the high-temperature oxidation resistance of the materials of the first conductive layer and the second conductive layer is greater than the high-temperature oxidation resistance of the material of the conductive core layer.

[0079] It can be understood that the material of the heating wire provided in the embodiment of the present invention can be a metal or alloy material, such as W, Mo, Ni-Cr alloy, Fe-Ni-Cr alloy. Alternatively, the material of the heating wire can be ceramic, such as SiC, ITO, BC, etc. Alternatively, the heating wire can be a structure in which the first conductive layer and the second conductive layer wrap the conductive core layer, and the ability of the first conductive layer and the second conductive layer to resist high temperature oxidation is greater than the ability of the conductive core layer to resist high temperature oxidation, and the heating capacity of the conductive core layer is greater than the heating capacity of the first conductive layer and the second conductive layer; firstly, the first conductive layer resistant to high temperature oxidation is prepared on the sub-dielectric layer by processes such as coating, printing or printing, and then the conductive core layer with good heating performance but poor high temperature oxidation resistance is prepared on the first conductive layer by processes such as coating, printing or printing, and finally, the second conductive layer is covered and wrapped with the conductive core layer by processes such as coating, printing or printing to form a sandwich structure, and the first conductive layer and the second conductive layer can protect the conductive core layer from being oxidized at high temperature, so that the heating wire has good heating performance. Among them, the materials of the first conductive layer, the second conductive layer and the conductive core layer can be metal, alloy or ceramic, and the present invention does not make specific restrictions on this.

[0080] In order to facilitate powering on the heating component, the heating component provided in the embodiment of the present invention is connected with a wiring terminal. Figure 7 FIG. 1 is a schematic diagram of a structure of another dielectric window provided in an embodiment of the present invention, wherein the dielectric window provided in an embodiment of the present invention further includes:

[0081] The first terminal 301 to the Nth terminal, the kth terminal is connected to the kth heating component, wherein the kth terminal is embedded in the dielectric layer 100, and the kth terminal includes a portion exposed outside the dielectric layer 100, and k is an integer not less than 1 and not greater than N. As shown in the figure, the first terminal 301 and the second terminal 302 include two terminals, an input terminal and an output terminal, and both terminals include a portion exposed outside the dielectric layer 100, wherein the two terminals of the first terminal 301 are correspondingly connected to the two terminals of the first heating component 201, and the two terminals of the second terminal 302 are correspondingly connected to the two terminals of the second heating component 202, for supplying power to the first heating component 201 and the second heating component 202.

[0082] Optionally, all the terminals provided in the embodiment of the present invention may be located on the same side of the dielectric layer, or at least one terminal may be located on a different layer of the dielectric layer from the other terminals, and the present invention does not impose any specific restrictions on this. Accordingly, the kth terminal and the kth heating component are both located between the kth sub-dielectric layer and the k+1th sub-dielectric layer; and when the kth sub-dielectric layer or the k+1th sub-dielectric layer includes a groove, the kth heating component and the kth terminal are both located in the groove.

[0083] Further references Figure 8 FIG. 1 is a schematic diagram of a structure of another dielectric window provided in an embodiment of the present invention, and Figure 8 for Figure 7 A cross-sectional view along the CC' direction, wherein the k-th terminal (taking the second terminal 302 as an example) provided in the embodiment of the present invention comprises:

[0084] A connecting wire 310 and an external pin 320, wherein the connecting wire 310 is embedded in the dielectric layer 100 and connected to the kth heating component, and the connecting wire 310 includes a filling groove on the side away from the connection end thereof with the kth heating component; the external pin 320 is filled in the filling groove, and the external pin 320 is exposed outside the dielectric layer 100.

[0085] It can be understood that when preparing the terminal provided in the embodiment of the present invention, a connecting wire can be formed on the sub-dielectric layer through processes such as plating, printing or printing, and then the connecting wire is sintered to form a solid structure during the pressing and sintering process of the dielectric layer. The connecting wire is punched through a punching process to form a filling groove, and finally an external pin is filled in the filling groove to form a connector for an external power supply.

[0086] In one embodiment of the present invention, the material of the connecting wire provided in the embodiment of the present invention can be the same as that of the heating wire. The connecting wire is prepared while the heating wire is formed on the sub-dielectric layer, so that the connecting wire has good heating performance; at the same time, in order to avoid the adverse effects caused by overheating at the connecting wire, an external pin with good thermal and electrical conductivity is set at the connecting wire; wherein, the high temperature oxidation resistance of the material of the connecting wire provided in the embodiment of the present invention is greater than the high temperature oxidation resistance of the material of the external pin; and the resistance of the material of the connecting wire is greater than the resistance of the material of the external pin, thereby improving the performance of the terminal through the low resistance external pin, and setting the high temperature oxidation resistant connecting wire to avoid the oxidation problem of the terminal during the pressing and sintering process. Optionally, the material of the connecting wire provided in the embodiment of the present invention can be metal, alloy or ceramic (such as metal tungsten, ceramic Al2O3, etc.), and the material of the external pin can be metal (such as copper metal, because copper has a low melting point, when the filling slot is filled with copper material, the external pin can be formed by local casting extrusion, threaded connection and other processes).

[0087] Furthermore, in order to improve the looseness and hole problems of the heating surface, the dielectric window provided in the embodiment of the present invention also includes a dense film formed on the heating surface side. Fig. 9 , which is a schematic structural diagram of another dielectric window provided in an embodiment of the present invention, wherein the dielectric layer 100 provided in an embodiment of the present invention includes a heating surface 120 facing the reaction chamber of the semiconductor device (the heating surface 120 is also the surface of the dielectric layer 100 facing the reaction chamber), wherein the dielectric window further includes:

[0088] A dense film 400 covers the heating surface 120 , wherein the porosity of the dense film 400 is smaller than the porosity of the heating surface 120 , and the looseness of the dense film 400 is smaller than the looseness of the heating surface 120 .

[0089] Optionally, the dense film provided in the embodiment of the present invention has a thickness ranging from 0.5 to 500 μm.

[0090] It is understandable that when the dielectric layer provided in the embodiment of the present invention is made of ceramic or other materials, during the pressing and sintering process of the dielectric layer, due to volume shrinkage and burnout of the binder, the formed dielectric layer will have a small amount of looseness and holes. The embodiment of the present invention forms a dense film covering the heating surface on one side of the heating surface, effectively covering the defective structure of the dielectric layer, thereby reducing the etching effect of the plasma on the dielectric layer and reducing problems such as particle contamination during the plasma etching process.

[0091] In one embodiment of the present invention, the embodiment of the present invention can form the dense film by using processes such as PEPVD (plasma enhanced physical vapor deposition) or CVD (chemical vapor deposition). Among them, PEPVD is a surface thin film deposition process that combines PVD and Plasma Enhancement. Among them, the PVD process can be carried out by vacuum evaporation, ion bombardment sputtering, magnetron sputtering and other process methods, and the plasma enhancement function can be achieved by ion bombardment in plasma and ion beam bombardment. Due to the bombardment effect of ions, the weak atomic bonds in the film growth process can be broken, and the atomic surface diffusion is promoted to form a dense crystalline or amorphous structure with consistent orientation. Therefore, compared with other thin film deposition processes such as evaporation, plasma spraying, etc., the film formed by PEPVD has a dense structure and greatly enhanced plasma etching resistance. In addition, due to the combination of PVD and plasma processes, PEPVD can be carried out on the surface of workpieces at lower temperatures (such as <200°C), and the film thickness can reach more than 150 microns, which is very suitable for depositing ceramic films such as Y2O3 with sufficient thickness (such as >10μm) on the surface of ceramic workpieces. Therefore, in recent years, it has been widely used in plasma etching equipment to protect the surface film of key workpieces from plasma etching.

[0092] In one embodiment of the present invention, the dielectric window provided by the embodiment of the present invention may further include a protective film to protect the dielectric layer. Fig.10FIG. 1 is a schematic diagram of a structure of another dielectric window provided in an embodiment of the present invention, wherein the dielectric window further includes:

[0093] The protective film 500 covers the exposed surface of the dielectric layer 100 , wherein the dense film 400 is located on the heating surface 120 side of the dielectric layer 100 , and the dense film 500 is located on the side of the protective film 500 away from the heating surface 120 .

[0094] Optionally, the protective film provided in the embodiment of the present invention has a thickness ranging from 0.5 to 500 μm.

[0095] It can be understood that the exposed surface of the dielectric layer provided in the embodiment of the present invention is fully covered by a protective film to protect the exposed surface of the dielectric layer, enhance the dielectric layer's resistance to chemical corrosion, plasma etching, etc., and further improve the stability and service life of the dielectric window.

[0096] In one embodiment of the present invention, the protective film provided by the present invention can be formed by ALD (Atomic Layer Deposition). ALD is a special chemical vapor deposition (CVD) process that grows a single atomic layer, and its film growth process can generally be carried out in a low temperature and low pressure environment below 450°C. The process feature different from ordinary CVD is that the chemical reaction body (Chemical Precursor) in the ALD process does not decompose before contacting the substrate surface, but undergoes a chemical decomposition reaction on the surface after being adsorbed on the substrate surface, and the chemical components (Radical) formed by the decomposition are uniformly covered on the entire substrate surface to form atomic layer deposition. Therefore, as long as the distribution of the reaction gas is controlled in the ALD process so that the chemical reaction body can fully diffuse and contact the component surface, and the remaining precursor is purged for a sufficient time to remove the remaining precursor, the ALD process can form a uniform multi-atomic layer stacked growth film on engineering components with complex geometric shapes, inner and outer walls of cylindrical tubes, and inner surfaces of fine pores. Since the ALD film is formed by atomic layer growth through decomposition of the reaction body, the ALD film structure is very dense and can form all-round surface coverage of the substrate component. The film also has good interface bonding strength and thermal stability.

[0097] The protective film provided by the embodiment of the present invention can be a single-layer film, wherein the protective film provided by the embodiment of the present invention preferably selects a plasma etching resistant material with a chemical composition and organizational structure similar to that of the dielectric layer, such as when the material of the dielectric layer is Al2O3, the protective film is Al2O3, and when the material of the dielectric layer is Y2O3, the protective film is Y2O3, YF3 or YOF, so that the protective film and the dielectric layer have a smaller interface deformation stress, which is beneficial to improve the stability of the dielectric window. Optionally, the protective film provided by the embodiment of the present invention can be an amorphous aluminum oxide sub-protective film, so as to prevent the trace elements in the dielectric layer from diffusing to the protective film through the amorphous aluminum oxide sub-protective film, thereby reducing the trace element contamination during the use of semiconductor equipment.

[0098] Alternatively, the protective film provided by the embodiment of the present invention may also be a multilayer film, that is, the protective film provided by the embodiment of the present invention includes: a plurality of sub-protective films formed in sequence, wherein, among the plurality of sub-protective films, the initial sub-protective film covers the exposed surface of the dielectric layer, and the latter sub-protective film covers the exposed surface of the former sub-protective film. Optionally, the protective film provided by the embodiment of the present invention includes: an amorphous aluminum oxide sub-protective film and a yttrium oxide sub-protective film formed in sequence; or, an amorphous aluminum oxide sub-protective film, a crystalline aluminum oxide sub-protective film and a yttrium oxide sub-protective film formed in sequence.

[0099] It can be understood that the protective film provided by the embodiment of the present invention first forms a layer of amorphous aluminum oxide sub-protective film on the surface of the dielectric layer, so as to prevent the trace elements in the dielectric layer from diffusing to the protective film through the amorphous aluminum oxide sub-protective film, thereby reducing the trace element contamination during the use of the semiconductor device. Then, a layer of yttrium oxide sub-protective film is formed. Since the thermal expansion coefficients of aluminum oxide and yttrium oxide are very close, and the plasma etching resistance of yttrium oxide in different plasma environments (containing O2, F, Cl, HBr, etc.) is much higher than that of aluminum oxide, therefore, depositing the yttrium oxide sub-protective film on the surface of the amorphous aluminum oxide sub-protective film can further enhance the process stability of the dielectric window and the application range in different semiconductor devices.

[0100] Furthermore, in order to enhance the bonding force between the amorphous aluminum oxide sub-protective film and the yttrium oxide sub-protective film, the protective film provided in the embodiment of the present invention also includes a crystalline aluminum oxide sub-protective film located between the amorphous aluminum oxide sub-protective film and the yttrium oxide sub-protective film.

[0101] It should be noted that the protective film provided by the embodiments of the present invention is not limited to the above-mentioned methods. In other embodiments of the present invention, the protective film provided by the present invention may also include the superposition of other types of sub-protective films, which needs to be specifically designed according to parameters such as the environment and performance in actual applications.

[0102] In any of the above embodiments of the present invention, the material of any one of the protective film and the dense film provided in the embodiment of the present invention includes at least one of Al2O3, Y2O3, YF3, YOF, ZrO2, Er2O3, SiC, SiO2, HfO2, Si3N4, AlN, B2O3, Nd2O3, Nb2O5, CeO2, Sm2O3, Yb2O3, YAG, EAG, YAM, YAP, EAM, and EAP. Furthermore, based on the materials of the above protective film and the dense film, any one of the protective film and the dense film provided in the embodiment of the present invention can also be a composite ceramic film based on the above materials.

[0103] Correspondingly, an embodiment of the present invention further provides a semiconductor device, wherein the semiconductor device includes the dielectric window provided by any one of the above embodiments.

[0104] Optionally, the semiconductor device provided in the embodiment of the present invention may be a plasma etching device, which is not specifically limited in the present invention.

[0105] The embodiment of the present invention provides a dielectric window and a semiconductor device, comprising: a dielectric layer, the dielectric layer comprising an opening penetrating the dielectric layer; a first heating component, the first heating component being embedded in the dielectric layer, and the first heating component being arranged around the opening. It can be seen that the technical solution provided by the embodiment of the present invention embeds the first heating component inside the dielectric layer, and then after the first heating component is powered on, controls the dielectric layer to be heated from the inside to the outside, which can not only improve the heating efficiency of the dielectric window, but also significantly improve the uniformity of the temperature distribution on the surface of the dielectric window by arranging the first heating component around the opening, thereby improving the stability of the plasma etching process while avoiding the problem of particle contamination and trace element contamination of the reaction chamber caused by uneven heating of the dielectric window.

[0106] In the description of the present invention, it is necessary to understand that the orientation or position relationship indicated by terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention.

[0107] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0108] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral one; it can be a mechanical connection, an electrical connection, or communication with each other; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0109] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0110] In the present invention, the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc., mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the described specific features, structures, materials or characteristics may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0111] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.

Claims

1. A dielectric window, applied to semiconductor equipment, characterized in that: include: a dielectric layer, the dielectric layer comprising an opening extending through the dielectric layer; The first heating component is embedded in the dielectric layer and is disposed around the opening.

2. The dielectric window according to claim 1, characterized in that The dielectric window further comprises: From the second heating element to the Nth heating element, the i-th heating element is embedded in the dielectric layer, and the i-th heating element is arranged around the i-1th heating element, N is an integer greater than 1, and i is an integer greater than 1 and not greater than N.

3. The dielectric window according to claim 2, characterized in that: In a direction perpendicular to the surface where the dielectric layer is located, and among the first heating element to the Nth heating element, the distances between different heating elements and the same plane are different.

4. The dielectric window according to claim 3, characterized in that: The dielectric layer includes a heating surface facing the reaction chamber of the semiconductor device; The distance between the jth heating component and the heating surface is greater than the distance between the j+1th heating component and the heating surface, and j is an integer not less than 1 and less than N.

5. The dielectric window according to claim 3, characterized in that: The dielectric layer includes a first sub-dielectric layer to an N+1th sub-dielectric layer, and the jth heating component is located between the jth sub-dielectric layer and the j+1th sub-dielectric layer, where j is an integer not less than 1 and less than N.

6. The dielectric window according to claim 5, characterized in that: The jth dielectric sub-layer or the j+1th dielectric sub-layer comprises a groove, and the jth heating component is located in the groove.

7. The dielectric window according to claim 5, characterized in that: In the first sub-dielectric layer to the N+1th sub-dielectric layer, all sub-dielectric layers are made of the same material; Alternatively, among the first to N+1th sub-dielectric layers, a material of at least one sub-dielectric layer is different from that of the other sub-dielectric layers.

8. The dielectric window according to claim 5, characterized in that: In the first to N+1th sub-dielectric layers, the material of any sub-dielectric layer includes at least one of Al2O3, YAG, YOF and Y2O3.

9. The dielectric window according to claim 2, characterized in that: At least one of the first to Nth heating assemblies includes a heating wire.

10. The dielectric window according to claim 9, characterized in that The material of the heating wire is metal, alloy or ceramic; Alternatively, the heating wire includes a first conductive layer, a conductive core layer located on the first conductive layer, and a second conductive layer covering the conductive core layer, and the high temperature oxidation resistance of the materials of the first conductive layer and the second conductive layer is greater than the high temperature oxidation resistance of the material of the conductive core layer.

11. The dielectric window according to claim 2, characterized in that: The dielectric window further comprises: The first terminal to the Nth terminal, the kth terminal is connected to the kth heating component, wherein the kth terminal is embedded in the dielectric layer, and the kth terminal includes a portion exposed outside the dielectric layer, and k is an integer not less than 1 and not greater than N.

12. The dielectric window according to claim 11, characterized in that: The kth terminal comprises: A connecting wire and an external pin, wherein the connecting wire is embedded in the dielectric layer and connected to the kth heating component, and the connecting wire includes a filling groove on the side away from the connection end with the kth heating component; the external pin is filled in the filling groove, and the external pin is exposed outside the dielectric layer.

13. The dielectric window according to claim 12, characterized in that: The high temperature oxidation resistance of the material of the connecting wire is greater than the high temperature oxidation resistance of the material of the external pin; And the resistance of the material of the connecting wire is greater than the resistance of the material of the external pin.

14. The dielectric window according to claim 1, characterized in that The dielectric layer includes a heating surface facing a reaction chamber of the semiconductor device, wherein the dielectric window further includes: A dense film covers the heating surface.

15. The dielectric window according to claim 14, characterized in that: The thickness of the dense film ranges from 0.5 to 500 μm.

16. The dielectric window according to claim 14, characterized in that The dielectric window further comprises: a protective film covering the exposed surface of the dielectric layer, wherein the dense film is located on the heating surface side of the dielectric layer, and the dense film is located on the side of the protective film away from the heating surface.

17. The dielectric window according to claim 16, characterized in that The thickness of the protective film ranges from 0.5 to 500 μm.

18. The dielectric window according to claim 16, characterized in that The protective film comprises: A plurality of sub-protective films are formed sequentially, wherein, among the plurality of sub-protective films, the initial sub-protective film covers the exposed surface of the dielectric layer, and the subsequent sub-protective film covers the exposed surface of the previous sub-protective film.

19. The dielectric window according to claim 18, characterized in that The protective film comprises: An amorphous aluminum oxide sub-protective film and an yttrium oxide sub-protective film are formed in sequence; Alternatively, an amorphous aluminum oxide sub-protective film, a crystalline aluminum oxide sub-protective film and a yttrium oxide sub-protective film are formed in sequence.

20. The dielectric window according to claim 14 or 16, characterized in that: The material of any one of the protective film and the dense film includes at least one of Al2O3, Y2O3, YF3, YOF, ZrO2, Er2O3, SiC, SiO2, HfO2, Si3N4, AlN, B2O3, Nd2O3, Nb2O5, CeO2, Sm2O3, Yb2O3, YAG, EAG, YAM, YAP, EAM, and EAP.

21. A semiconductor device, characterized in that: The semiconductor device comprises the dielectric window according to any one of claims 1-20.

22. The semiconductor device according to claim 21, characterized in that The semiconductor equipment is a plasma etching equipment.

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