A skyrmion memory array based on a continuous artificial antiferromagnetic material

Abstract

The application discloses a SQUID memory array based on continuous artificial antiferromagnetic material and relates to the technical field of random memory. The SQUID memory array based on the continuous artificial antiferromagnetic material comprises an array free layer, a top tunnel layer, a lower pressure-bearing layer and a plurality of device electrode groups, wherein each device electrode group comprises a top device electrode assembly and a bottom device electrode; the array free layer is arranged between the top tunnel layer and the lower pressure-bearing layer to form an information storage layer; the top device electrode assembly and the bottom device electrode in the device electrode group are arranged on the top surface and the bottom surface of the information storage layer respectively, the projection of the top device electrode assembly along the direction perpendicular to the array free layer is coincident with the bottom device electrode, and a magnetic tunnel junction capable of performing binary storage is formed by a tunnel junction reference layer in the top device electrode assembly and the array free layer and the top tunnel layer in the projection coverage range of the top device electrode assembly. The above scheme can improve the device integration density of the magnetic random memory.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of random memory, in particular to a Skyrmion memory array based on continuous artificial antiferromagnetic material. BACKGROUND

[0002] In recent years, voltage-controlled magnetic anisotropy magnetic random access memory (VCMA-MRAM) has been widely used. SAF Skyrmion VCMA-MRAM memory devices using Skyrmions as information carriers in synthetic antiferromagnetic materials (SAF) have received increasing attention. Among them, the SAF Skyrmion VCMA-MRAM memory device is a magnetic random access memory (MRAM) that uses Skyrmions in artificial antiferromagnetic materials to store and process information. Here, Skyrmions are magnetic structures with non-trivial topological properties that can form stable vortex-like magnetization patterns in magnetic materials. Further, compared with traditional VCMA-MRAM memory devices with single domain free layers, SAF Skyrmion VCMA-MRAM memory devices do not require external magnetic field assistance when in use, have zero write error rate in theory, low Skyrmion write power, and high storage stability.

[0003] Currently, each SAF Skyrmion VCMA-MRAM memory device in the magnetic random access memory composed of SAF Skyrmion VCMA-MRAM memory devices is independent of each other. Specifically, each SAF Skyrmion VCMA-MRAM memory device is composed of a top electrode, a bottom electrode, a reference layer, a tunneling layer, a free layer, and a bottom pressure-bearing layer. Among them, the reference layer, the tunneling layer, and the free layer form a magnetic tunnel junction that can generate or annihilate Skyrmions to realize binary storage as the core of the SAF Skyrmion VCMA-MRAM memory device. When a reverse voltage pulse is applied to the two electrodes, Skyrmion nucleation occurs in the free layer between the two electrodes. When a forward voltage pulse is applied to the two electrodes, the Skyrmions in the free layer between the two electrodes annihilate. Further, a computer device can store binary data by connecting to the two electrodes in the SAF Skyrmion VCMA-MRAM memory device, and by identifying the resistance difference of the magnetic tunnel junction in different SAF free layer states.

[0004] However, the edge pinning of the free layer based on the SAF material hinders the nucleation and annihilation of the skyrmion, resulting in the need to reserve a sufficient buffer area between the nucleation center and the edge of the SAF material in the SAF Skyrmion VCMA-MRAM storage device, thereby seriously restricting the integration and size miniaturization of the SAF Skyrmion VCMA-MRAM storage device, and resulting in a low device integration density of the magnetic random access memory based on the SAF Skyrmion VCMA-MRAM storage device. Meanwhile, the discrete device structure also limits the advantage of the electric transport of the skyrmion. SUMMARY

[0005] Therefore, the application provides a skyrmion memory array based on a continuous artificial antiferromagnetic material, which mainly aims to solve the technical problem of a low device integration density of a magnetic random access memory based on a SAF Skyrmion VCMA-MRAM storage device.

[0006] According to a first aspect of the application, a skyrmion memory array based on a continuous artificial antiferromagnetic material is provided, which comprises an array free layer, a top tunnel layer, a lower pressure-bearing layer, and a plurality of device electrode groups, wherein each device electrode group comprises a top device electrode assembly and a bottom device electrode, and the top device electrode assembly comprises a top device electrode and a tunnel junction reference layer.

[0007] The array free layer is arranged between the top tunnel layer and the lower pressure-bearing layer, and constitutes an information storage layer.

[0008] The top device electrode assembly and the bottom device electrode in the device electrode group are arranged on the top surface and the bottom surface of the information storage layer, respectively, and the projection of the top device electrode assembly along the direction perpendicular to the array free layer coincides with the bottom device electrode, wherein the bottom surface of the top device electrode is in contact with the top surface of the tunnel junction reference layer, the bottom surface of the tunnel junction reference layer is in contact with the top surface of the top tunnel layer, and the top surface of the bottom device electrode is in contact with the bottom surface of the lower pressure-bearing layer.

[0009] The tunnel junction reference layer in the device electrode group, the array free layer, and the top tunnel layer within the projection range of the top device electrode assembly in the device electrode group along the direction perpendicular to the array free layer constitute a magnetic tunnel junction capable of binary storage.

[0010] Optionally, the material of the top tunnel layer and the lower pressure-bearing layer is magnesium oxide or aluminum oxide.

[0011] Optionally, the array free layer comprises an intermediate layer, a first magnetic layer and a second magnetic layer; the intermediate layer is arranged between the first magnetic layer and the second magnetic layer, the first magnetic layer is in contact with the top tunneling layer, and the second magnetic layer is in contact with the bottom pressure-bearing layer.

[0012] Optionally, the intermediate layer is grounded

[0013] Optionally, the first magnetic layer and the second magnetic layer are made of cobalt-iron-boron.

[0014] Optionally, the first magnetic layer and the second magnetic layer are made of cobalt.

[0015] Optionally, the intermediate layer is made of one of tungsten, ruthenium, platinum or tantalum.

[0016] Optionally, the side surface of the array free layer has a plurality of electrode access ports, each of the electrode access ports is located at a different position of the side surface, so that when different voltage levels of voltage are respectively applied to any two electrode access ports, a transport current for directional electric transport of a skyrmion is generated in the array free layer; wherein the current direction of the transport current is from the electrode access port with a high voltage level of voltage to the electrode access port with a low voltage level of voltage.

[0017] Optionally, the distance between the centers of any two top device electrodes is greater than the diameter of the top device electrode.

[0018] Optionally, the skyrmion memory array based on the continuous artificial anti-ferromagnetic material further comprises a plurality of voltage sources, the voltage sources correspond one-to-one to the device electrode groups; the voltage source is connected with the top device electrode and the bottom device electrode of the device electrode group corresponding to the voltage source, for sending a forward voltage pulse or a reverse voltage pulse to the top device electrode and the bottom device electrode.

[0019] The application provides a Skyrmion memory array based on a continuous artificial antiferromagnetic material, which enables multiple magnetic tunnel junctions capable of binary storage in the Skyrmion memory array to share a continuous array free layer based on a SAF material as a free layer of each magnetic tunnel junction, so as to form a continuous SAF device array structure, and the magnetic tunnel junctions are not located at the edge of the free layer, so that a buffer area is not required for the magnetic tunnel junctions, the integration density of the SAF Skyrmion VCMA-MRAM memory device in the magnetic random access memory can be greatly improved, more SAF Skyrmion VCMA-MRAM memory devices can be accommodated in a unit area of the magnetic random access memory, and the device integration density of the magnetic random access memory based on the SAF Skyrmion VCMA-MRAM memory device is significantly improved.

[0020] The above description is only a summary of the technical scheme of the application, in order to more clearly understand the technical means of the application, the application can be implemented according to the content of the specification, and in order to make the above and other purposes, characteristics and advantages of the application more obvious and easy to understand, the following specific embodiments of the application are described. BRIEF DESCRIPTION OF DRAWINGS

[0021] The drawings described herein are used to provide further understanding of the application, and form a part of the application, the schematic embodiments of the application and the description thereof are used to explain the application, and do not constitute an improper limitation on the application. In the drawings:

[0022] Figure 1 A structure schematic diagram of an existing magnetic random access memory provided by an embodiment of the application is shown;

[0023] Figure 2 A schematic diagram of a Skyrmion in a free layer provided by an embodiment of the application is shown;

[0024] Figure 3 A structure schematic diagram of a Skyrmion memory array based on a continuous artificial antiferromagnetic material provided by an embodiment of the application is shown;

[0025] Figure 4 A structure schematic diagram of a device electrode group provided by an embodiment of the application is shown;

[0026] Figure 5 A structure schematic diagram of a SAF Skyrmion VCMA-MRAM memory device in a Skyrmion memory array based on a continuous artificial antiferromagnetic material provided by an embodiment of the application is shown;

[0027] Figure 6Fig. 2 shows a structural schematic diagram of a Sagniton memory array based on a continuous artificial antiferromagnetic material according to an embodiment of the present application;

[0028] Figure 7 Fig. 3 shows a structural schematic diagram of a Sagniton memory array based on a continuous artificial antiferromagnetic material according to an embodiment of the present application;

[0029] Figure 8 Fig. 4 shows a structural schematic diagram of an array free layer provided with an electrode access port according to an embodiment of the present application;

[0030] Figure 9 Fig. 5 shows a current direction schematic diagram of a current transport according to an embodiment of the present application;

[0031] Figure 10a Fig. 6 shows a transport schematic diagram of a Sagniton according to an embodiment of the present application;

[0032] Figure 10b Fig. 7 shows a transport schematic diagram of a Sagniton according to an embodiment of the present application. DETAILED DESCRIPTION

[0033] Hereinafter, the present application will be described in detail with reference to the accompanying drawings and embodiments. It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict.

[0034] Currently, as Figure 1As shown, each of the SAF Skyrmion VCMA-MRAM storage devices 150 in the magnetic random access memory composed of the SAF Skyrmion VCMA-MRAM storage devices 150 is independent of each other, and specifically, each of the SAF Skyrmion VCMA-MRAM storage devices 150 is composed of a top electrode 151, a reference layer 157, a bottom electrode 152, a tunneling layer 153 sandwiched between the reference layer 157 and the bottom electrode 152, a bottom clamping layer 158, and a free layer 154, and further, a top surface of the reference layer 157 is in contact with the top electrode 151, and a bottom surface of the reference layer 157 is in contact with the tunneling layer 153. Further, the reference layer 157, the tunneling layer 153, and the free layer 154 of the SAF Skyrmion VCMA-MRAM storage device 150 form a magnetic tunnel junction capable of realizing binary storage based on generation or annihilation of Skyrmions, when a reverse voltage pulse is applied to the top electrode 151 and the bottom electrode 152, Skyrmion nuclei are generated in the free layer 154 between the top electrode 151 and the bottom electrode 152, and when a forward voltage pulse is applied to the top electrode 151 and the bottom electrode 152, the Skyrmions existing in the free layer 154 between the top electrode 151 and the bottom electrode 152 are annihilated, and the computer device can realize binary storage by connecting to two electrodes in the SAF Skyrmion VCMA-MRAM storage device, by identifying the resistance difference of the magnetic tunnel junction in the state of the free layer 154 of different SAF materials. However, the edge pinning of the free layer based on the SAF material will hinder the nucleation and annihilation of the Skyrmions, Figure 2 A schematic diagram of the Skyrmion on the free layer 154 is shown as follows, Figure 2 As shown, in the SAF Skyrmion VCMA-MRAM storage device 150 of the discrete Skyrmion 155, a sufficient buffer region 156 needs to be reserved between the nucleation center of the Skyrmion 155 and the edge of the free layer 154, and the Skyrmion 155 cannot be too close to the edge of the free layer 154, which seriously restricts the integration and size miniaturization of the SAF Skyrmion VCMA-MRAM storage device 150, resulting in a low device integration density of the magnetic random access memory based on the SAF Skyrmion VCMA-MRAM storage device 150.

[0035] To solve the above problems, in one embodiment, as shown in Figure 3 A Skyrmion memory array based on a continuous artificial antiferromagnetic material is provided, which includes an array free layer 100, a top tunneling layer 200, a lower clamping layer 300, and a plurality of device electrode groups, wherein, as shown in Figure 4As shown, each of the device electrode groups 400 includes a top device electrode assembly 410 and a bottom device electrode 420, the top device electrode assembly 410 includes a top device electrode 411 and a tunnel junction reference layer 412, here, the bottom surface of the top device electrode 411 is in contact with the top surface of the tunnel junction reference layer 412, the top device electrode 411 and the tunnel junction reference layer 412 together form a cylindrical top device electrode assembly 410.

[0036] Further, the top device electrode assembly 410 and the bottom device electrode 420 can be connected to an external voltage source V, the voltage source V can be controlled to send a positive voltage pulse or a reverse voltage pulse to the top device electrode assembly 410 and the bottom device electrode 420. Wherein, the material of the array free layer 100 can be SAF material.

[0037] Further, as shown, Figure 3 The array free layer 100 is arranged between the top tunnel layer 200 and the lower pressure bearing layer 300 to form an information storage layer M; specifically, the bottom surface of the top tunnel layer 200 is in contact with the top surface of the array free layer 100, the bottom surface of the array free layer 100 is in contact with the top surface of the lower pressure bearing layer 300, and the array free layer 100, the top tunnel layer 200 and the lower pressure bearing layer 300 are arranged in parallel. Here, the top tunnel layer 200 and the lower pressure bearing layer 300 are respectively composed of magnesium oxide or aluminum oxide.

[0038] Further, the top device electrode assembly 410 and the bottom device electrode 420 in the device electrode group are arranged on the top surface and the bottom surface of the information storage layer M, respectively, here, the top surface of the information storage layer M is the top surface of the top tunnel layer 200, and the bottom surface of the information storage layer M is the bottom surface of the lower pressure bearing layer 300. Further, the projection of the top device electrode assembly 410 along the direction perpendicular to the array free layer 100 coincides with the bottom device electrode 420.

[0039] Further, as shown, Figure 5As shown, the top device electrode assembly 410 includes a top device electrode 411 and a tunnel junction reference layer 412, a bottom surface of the top device electrode 411 is in contact with a top surface of the tunnel junction reference layer 412, a bottom surface of the tunnel junction reference layer 412 is in contact with a top surface of the top tunneling layer 200, and a top surface of the bottom device electrode 420 is in contact with a bottom surface of the lower pressure-bearing layer 300. The array free layer 100 within the projection coverage range of the tunnel junction reference layer 412 in the device electrode group, the top device electrode assembly 410 in the device electrode group, and the top tunneling layer 200 within the projection coverage range of the top device electrode assembly 410 in the device electrode group form a magnetic tunnel junction capable of binary storage, each magnetic tunnel junction serving as a core structure of a SAF Skyrmion VCMA-MRAM storage device, wherein the SAF Skyrmion VCMA-MRAM storage device includes the magnetic tunnel junction and the top device electrode assembly 410, the bottom device electrode 420, and the lower pressure-bearing layer 300 corresponding to the magnetic tunnel junction.

[0040] Further, the top device electrode assembly 410 and the bottom device electrode 420 in each device electrode group can be arranged at different positions of the information storage layer M according to the above-mentioned manner, and the magnetic tunnel junctions corresponding to each device electrode group share a continuous array free layer 100 made of SAF material. Further, a grounding terminal can be arranged at the array free layer 100 to ground the array free layer 100, thereby realizing the sharing of the grounding electrodes of the magnetic tunnel junctions in the Skyrmion memory array based on the continuous artificial anti-ferromagnetic material, effectively reducing the size of the SAF Skyrmion VCMA-MRAM storage device corresponding to a single magnetic tunnel junction, and further improving the integration density of the Skyrmion memory array based on the continuous artificial anti-ferromagnetic material.

[0041] Further, as shown in Figure 5 The top device electrode 411 is connected to an external voltage source V, and the voltage source V can be controlled to apply a forward voltage pulse or a reverse voltage pulse to the top device electrode 411. Further, the top device electrode 411 is connected to an external computer device (not shown in the figure) at the junction with the tunnel junction reference layer 412, and the tunnel junction reference layer 412 as a reference layer is in contact with the top tunneling layer 200. Further, the bottom device electrode 420 is connected to an external voltage source V, and the voltage source V can be controlled to apply a forward voltage pulse or a reverse voltage pulse to the bottom device electrode 420. Further, the bottom device electrode 420 is in contact with the lower pressure-bearing layer 300.

[0042] This embodiment provides a skyrmion memory array based on continuous artificial antiferromagnetic material. Multiple magnetic tunnel junctions capable of binary storage within the skyrmion memory array share a continuous array free layer based on SAF material to form a continuous SAF-type device array structure. This allows some magnetic tunnel junctions to be located outside the edges of the free layer, eliminating the need for buffer zones and significantly increasing the integration density of SAF Skyrmion VCMA-MRAM memory devices in magnetic random access memory (MRAM). This allows more SAF Skyrmion VCMA-MRAM memory devices to be accommodated per unit area of ​​MRAM. Furthermore, the shared ground electrode of each magnetic tunnel junction in the skyrmion memory array based on continuous artificial antiferromagnetic material effectively reduces the size of the SAF Skyrmion VCMA-MRAM memory device corresponding to a single magnetic tunnel junction, thereby significantly improving the device integration density of MRAM based on SAF Skyrmion VCMA-MRAM memory devices.

[0043] In an optional embodiment, such as Figure 6 As shown, the array free layer 100 includes an intermediate layer 110, a first magnetic layer 120, and a second magnetic layer 130. Here, the first magnetic layer 120 and the second magnetic layer 130 can be made of cobalt-iron-boron or cobalt. Further, the intermediate layer 110 can be made of a metallic material capable of inducing RKKY (Ruderman-Kittel-Kasuya-Yosida) coupling, such as tungsten, ruthenium, platinum, or tantalum. Further, the intermediate layer 110 is grounded. Here, the tunnel junction reference layer 412, the top tunneling layer 200, and the first magnetic layer 120 in a magnetic tunnel junction are the core structures of the magnetic tunnel junction, used for information reading and storage, while the intermediate layer 110 is used to improve the stability of the first magnetic layer 120 above it.

[0044] Furthermore, the intermediate layer 110 is disposed between the first magnetic layer 120 and the second magnetic layer 130, and the first magnetic layer 120 is in contact with the top tunneling layer 200. Here, the top tunneling layer 200 is made of magnesium oxide (MgO) or aluminum oxide. The first magnetic layer 120 is made of cobalt iron boron (CoFeB) or cobalt (Co), and the top tunneling layer 200 and the first magnetic layer 120 can form the top double interface of the magnetic tunnel junction.

[0045] Further, the second magnetic layer 130 is in contact with the lower pressure-bearing layer 300, where the material of the lower pressure-bearing layer 300 is magnesium oxide or aluminum oxide, and the material of the second magnetic layer 130 is cobalt iron boron or cobalt, and the second magnetic layer 130 and the lower pressure-bearing layer 300 can form the bottom double interface of the magnetic tunnel junction. Further, the intermediate layer 110 is in contact with the first magnetic layer 120 and the second magnetic layer 130 respectively, and the intermediate layer 110, the first magnetic layer 120 and the second magnetic layer 130 are arranged in parallel.

[0046] Further, in actual use, when the voltage source V controlledly applies reverse voltage pulses to the top device electrode 411 and the bottom device electrode 420 at the same time, the array free layer 100 in the corresponding magnetic tunnel junction of the top device electrode 411 and the bottom device electrode 420 generates a Sagnac nucleation, and when the voltage source V controlledly applies forward voltage pulses to the top device electrode 411 and the bottom device electrode 420 at the same time, the Sagnac existing in the corresponding magnetic tunnel junction of the top device electrode 411 and the bottom device electrode 420 is annihilated, further, the computer device can identify the resistance difference of the magnetic tunnel junction at the array free layer 100 in the Sagnac state and the Sagnac-free state through the connection to the top device electrode 411, determine the information stored in the magnetic tunnel junction, realize the binary storage and reading of "0" and "1", here, when the magnetic tunnel junction is in a low resistance state, the magnetic tunnel junction stores data "1", and relatively, when the magnetic tunnel junction is in a high resistance state, the magnetic tunnel junction stores data "0".

[0047] Further, Figure 7 A two-dimensional image of a Sagnac memory array based on a continuous artificial anti-ferromagnetic material is given, as shown in Figure 7 As shown, the top device electrode assembly 410 corresponding to each device electrode group can be arranged on the top surface of the top tunneling layer 200 and in contact with the top tunneling layer 200; further, the bottom device electrode 420 corresponding to each device electrode group can be arranged with the top device electrode assembly 410 corresponding to the device electrode group and separated by the information storage layer M, and the projection of the top device electrode assembly 410 of the device electrode group in the direction perpendicular to the information storage layer M coincides with the bottom device electrode 420 of the device electrode group.

[0048] Further, the distance between the centers of any two of the top device electrodes is greater than the diameter of the top device electrode. Specifically, the top device electrode and the bottom device electrode can be cylindrical in shape, the center of the top device electrode can be the center point of the projection image of the projection of the top device electrode in the direction perpendicular to the information storage layer, i.e., the center of the bottom surface of the top device electrode, the diameter of the top device electrode can be the diameter of the bottom surface of the top device electrode, and the diameter of the bottom device electrode can be the diameter of the bottom surface of the bottom device electrode. Further, the distance between the centers of any two of the top device electrodes can be greater than 85 mm; further, the diameter of the top device electrode can be the same as the diameter of the bottom device electrode, and the diameter of the top device electrode and the diameter of the bottom device electrode can be greater than 55 mm.

[0049] The embodiments provided in the present application enable the magnetic tunnel junction to have a top-bottom double interface, which has a lower operating voltage and power consumption than a memory device with a single interface, and the difficulty of manipulating the skyrmions is low, thereby reducing the risk of breakdown of the device formed by the magnetic tunnel junction and having higher realizability.

[0050] In an optional embodiment, the skyrmion memory array based on the continuous artificial antiferromagnetic material further includes a plurality of voltage sources, the voltage sources corresponding one-to-one to the device electrode groups; here, the voltage sources can be connected to a remote host computer to output forward voltage pulses or reverse voltage pulses under control. As an example, if the skyrmion memory array based on the continuous artificial antiferromagnetic material includes n device electrode groups, the number of voltage sources in the skyrmion memory array based on the continuous artificial antiferromagnetic material is also n, and each voltage source is connected to the top device electrode and the bottom device electrode of a specific device electrode group for sending forward voltage pulses or reverse voltage pulses to the top device electrode and the bottom device electrode.

[0051] Here, when the voltage source sends a reverse voltage pulse to the top device electrode and the bottom device electrode of a device electrode group, the skyrmions in the magnetic tunnel junction in which the device electrode group is located are nucleated, and when the voltage source sends a forward voltage pulse to the top device electrode and the bottom device electrode of a device electrode group, the skyrmions existing in the magnetic tunnel junction in which the device electrode group is located are annihilated.

[0052] The embodiments provided in the present application can control the voltage pulse output state of each voltage source in the skyrmion memory array based on the continuous artificial antiferromagnetic material, control the data storage process of the skyrmion memory array based on the continuous artificial antiferromagnetic material, and improve the operability of the skyrmion memory array based on the continuous artificial antiferromagnetic material.

[0053] In an optional embodiment, as Figure 8As shown, the side of the array free layer 100 has a plurality of electrode access ports P, each of which is located at a different position of the side, so that when different voltage levels of voltage are respectively applied to any two electrode access ports P, a transport current for directional electric transport of a skyrmion is generated in the array free layer 100. Here, the side of the array free layer 100 is perpendicular to the contact surface of the array free layer 100 and a top tunneling layer (not shown in the figure). Here, the current direction of the transport current is from the electrode access port P with a high voltage level to the electrode access port P with a low voltage level.

[0054] In actual use, for example, Figure 9 As shown, if a first voltage V1 is applied to one of the electrode access ports P on the side of the array free layer 100, and a second voltage V2 is applied to another electrode access port P on the side of the array free layer 100, where the voltage level of the first voltage V1 is higher than that of the second voltage V2, a voltage difference is formed between the electrode access port P with the first voltage V1 and the electrode access port P with the second voltage V2, and further a transport current is generated on the array free layer 100, and the current direction of the transport current is from the electrode access port P with the first voltage V1 to the electrode access port P with the second voltage V2.

[0055] Further, by the skyrmion memory array based on the continuous artificial anti-ferromagnetic material provided in the present application, the skyrmions in the array free layer can be transported by controlling the direction of the transport current in the array free layer. Further, when the skyrmions are transported to a certain device electrode group, a capture voltage is sent to the device electrode group to capture the skyrmions. As an example, as shown in Figure 10a At a first time, three skyrmions 155 exist in a first region A in the array free layer, and the direction of the transport current is from left to right. Further, after a certain time, as shown in Figure 10b The three skyrmions 155 are transported to a second region B in the array free layer, and at this time, if a capture voltage is output to the device electrode group at the second region B, the skyrmions 155 will be captured.

[0056] The embodiments provided in the present application can generate a transport current in the array free layer in the skyrmion memory array based on the continuous artificial anti-ferromagnetic material, can realize electric transport of the skyrmions, and can apply a capture voltage to the region of the device electrode in the transport process of the skyrmions to realize skyrmion capture, and further can set various logic function arrays.

[0057] The embodiment provides a skyrmion memory array based on a continuous artificial antiferromagnetic material, a plurality of magnetic tunnel junctions capable of binary storage in the skyrmion memory array share one continuous array free layer based on a SAF material, to form a continuous SAF type device array structure, part of the magnetic tunnel junctions are not located at the edge of the free layer, and thus a buffer area does not need to be reserved for the magnetic tunnel junctions; meanwhile, each magnetic tunnel junction shares one ground terminal, the space occupied by the magnetic tunnel junction as a skyrmion VCMA-MRAM storage device can be reduced, the integration density of the SAF skyrmion VCMA-MRAM storage device in the magnetic random access memory can be greatly improved, and thus the device integration density of the magnetic random access memory based on the SAF skyrmion VCMA-MRAM storage device is significantly improved. Meanwhile, the continuous SAF material can be used to provide a basic hardware basis and operation space for the transport of skyrmions between devices and the design of a logic function array.

[0058] The above application serial number is only for description, and does not represent the advantages and disadvantages of the implementation scene. The above disclosure is only some specific implementation scenes of the application, but the application is not limited thereto, and any changes that can be thought of by those skilled in the art should fall within the protection scope of the application.

Claims

1. A skyrmion memory array based on a continuous artificial antiferromagnetic material, characterized in that, The SGMIM memory array based on the continuous artificial antiferromagnetic material comprises an array free layer, a top tunnel layer, a lower pressure bearing layer, and a plurality of device electrode groups, wherein each device electrode group comprises a top device electrode assembly and a bottom device electrode, and the top device electrode assembly comprises a top device electrode and a tunnel junction reference layer; The array free layer is arranged between the top tunnel layer and the lower pressure bearing layer, and constitutes an information storage layer; The top device electrode assembly and the bottom device electrode in the device electrode group are respectively arranged on the top surface and the bottom surface of the information storage layer, and the projection of the top device electrode assembly along the direction perpendicular to the array free layer is coincident with the bottom device electrode, wherein the bottom surface of the top device electrode is in contact with the top surface of the tunnel junction reference layer, the bottom surface of the tunnel junction reference layer is in contact with the top surface of the top tunnel layer, and the top surface of the bottom device electrode is in contact with the bottom surface of the lower pressure bearing layer; The tunnel junction reference layer in the device electrode group, the array free layer and the top tunnel layer within the projection range of the top device electrode assembly in the device electrode group along the direction perpendicular to the array free layer constitute a magnetic tunnel junction capable of binary storage.

2. The continuous artificial antiferromagnetic material-based SGMInon memory array of claim 1, wherein, The material of the top tunnel layer and the lower pressure bearing layer is magnesium oxide or aluminum oxide.

3. The continuous artificial antiferromagnetic material-based SGMInon memory array of claim 1, wherein, The array free layer comprises an intermediate layer, a first magnetic layer and a second magnetic layer; The intermediate layer is arranged between the first magnetic layer and the second magnetic layer, the first magnetic layer is in contact with the top tunnel layer, and the second magnetic layer is in contact with the lower pressure bearing layer.

4. The continuous artificial antiferromagnetic material-based SGMInon memory array of claim 3, wherein, The intermediate layer is grounded.

5. The continuous artificial antiferromagnetic material-based Sugginon memory array of claim 3, wherein, The material of the first magnetic layer and the second magnetic layer is cobalt iron boron.

6. The continuous artificial antiferromagnetic material-based Sugginon memory array of claim 3, wherein, The material of the first magnetic layer and the second magnetic layer is cobalt.

7. The continuous artificial antiferromagnetic material-based Sugginon memory array of claim 3, wherein, The material of the intermediate layer is one of tungsten, ruthenium, platinum or tantalum.

8. The continuous artificial antiferromagnetic material-based Sugginon memory array of claim 3, wherein, The side surface of the array free layer has a plurality of electrode access ports, each of which is located at a different position of the side surface, so that when different voltage levels of voltage are applied to any two electrode access ports respectively, a transport current for directional electric transport of SGMIM is generated in the array free layer; The current direction of the transport current is from the electrode access port with high voltage level to the electrode access port with low voltage level.

9. The continuous artificial antiferromagnetic material-based Suggenon memory array of claim 1, wherein, The distance between the electrode centers of any two top device electrodes is greater than the diameter of the top device electrode.

10. The continuous artificial antiferromagnetic material-based Sineglinon memory array of claim 1, wherein, The SGMIM memory array based on the continuous artificial antiferromagnetic material further comprises a plurality of voltage sources, and each voltage source corresponds to one device electrode group; The voltage source is connected with the top device electrode and the bottom device electrode of the device electrode group corresponding to the voltage source, and is used to send a forward voltage pulse or a reverse voltage pulse to the top device electrode and the bottom device electrode.

Images