Display device and manufacturing method thereof

Abstract

A display device and a method of manufacturing the same are provided. A display device according to an embodiment includes: an auxiliary electrode on a substrate and transmitting a common voltage; an insulating layer on the auxiliary electrode; a light emitting layer on the insulating layer; and a common electrode on the light emitting layer, the insulating layer having a through opening disposed over the auxiliary electrode, the light emitting layer disposed over the auxiliary electrode and having a light emitting layer opening overlapping the through opening, and the common electrode being electrically connected to the auxiliary electrode through the light emitting layer opening.

Description

[0001] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0119108 filed on September 7, 2023 in the Korean Intellectual Property Office (KIPO), the entire contents of which are incorporated herein by reference. Technical Field

[0002] The present disclosure relates to a display device and a method of manufacturing the display device. Background Art

[0003] A display device, such as a liquid crystal display (LCD) and an organic light emitting diode display (OLED display), includes a display panel including one or more pixels capable of displaying an image.

[0004] Each pixel includes a pixel electrode receiving a data signal, one or more transistors and one or more capacitors transmitting the data signal to the pixel electrode, and a common electrode opposite to the pixel electrode.

[0005] At least one layer may be located between the pixel electrode and the common electrode.

[0006] A common electrode may be formed across one or more pixels to transmit a constant voltage to each pixel. Summary of the invention

[0007] As display devices become larger, power consumption due to a voltage drop of a common electrode may increase. Therefore, by forming an auxiliary electrode and electrically connecting the common electrode to the auxiliary electrode, a voltage drop of a voltage transmitted through the common electrode may be reduced or prevented.

[0008] The technical objectives to be achieved by the disclosure are not limited to the technical objectives described herein, and those skilled in the art will clearly understand other technical objectives not mentioned herein from the description of the disclosure.

[0009] The embodiments can achieve electrical connection between the common electrode and the auxiliary electrode by preventing the presence of a resistance layer between the auxiliary electrode and the common electrode, prevent the generation of dark spots by eliminating particle generation, and prevent the increase of invalid space, which reduces the manufacturing cost of the display device and improves the yield.

[0010] According to an embodiment, a display device includes: an auxiliary electrode, which is located on a substrate and transmits a common voltage; an insulating layer, which is located on the auxiliary electrode; a light-emitting layer, which is located on the insulating layer; and a common electrode, which is located on the light-emitting layer, wherein the insulating layer has a through opening arranged above the auxiliary electrode, the light-emitting layer is arranged above the auxiliary electrode and has a light-emitting layer opening overlapping with the through opening, and the common electrode is connected to the auxiliary electrode through the light-emitting layer opening.

[0011] The display device may further include a common voltage line disposed on the substrate and transmitting a common voltage, and the auxiliary electrode may be electrically connected to the common voltage line.

[0012] The display device may include a plurality of pixels, each of the plurality of pixels includes a plurality of sub-pixels capable of displaying light of different colors, each of the plurality of sub-pixels includes a transistor and a light emitting diode, and the light emitting diode includes a pixel electrode, and the light emitting diode may include a light emitting layer and a common electrode.

[0013] The auxiliary electrode and the pixel electrode may be disposed on the same conductive layer and may include the same material.

[0014] The insulating layer may include a pixel opening overlapping the pixel electrode.

[0015] A portion of the auxiliary electrode overlapping the common voltage line may be electrically connected to the common voltage line through at least one opening of the insulating layer between the auxiliary electrode and the common voltage line.

[0016] The planar shape of the opening of the light emitting layer may be circular, elliptical or polygonal.

[0017] In a plan view, the light-emitting layer opening may be disposed within an edge of the through opening; alternatively, the edge of the light-emitting layer opening may be adjacent to the insulating layer, and in a plan view, the edge of the light-emitting layer opening may be aligned to substantially coincide with the edge of the through opening; alternatively, in a plan view, the through opening may be disposed within an edge of the light-emitting layer opening.

[0018] According to an embodiment, the method for manufacturing a display device includes the following steps: forming an auxiliary electrode on a substrate; forming a through opening by stacking and patterning an insulating layer on the auxiliary electrode; placing a mask pattern at a position overlapping with the through opening; stacking a light-emitting layer on the mask pattern and the insulating layer; removing the mask pattern and forming a light-emitting layer opening in the light-emitting layer; and forming a common electrode on the light-emitting layer, wherein the common electrode is electrically connected to the auxiliary electrode through the light-emitting layer opening.

[0019] The mask pattern may include an organic material including polyimide.

[0020] Positioning the mask pattern at a position overlapping the through opening may include forming the mask pattern on the main substrate.

[0021] Positioning the mask pattern at a position overlapping the through opening may include transferring the mask pattern formed on the main substrate to a transfer substrate, and transferring the mask pattern transferred to the transfer substrate onto the substrate.

[0022] The transfer substrate may include an electrostatic chuck.

[0023] Positioning the mask pattern at a position overlapping the through opening may include directly transferring the mask pattern formed on the master substrate onto the substrate.

[0024] The step of removing the mask pattern may include transferring the mask pattern using an electrostatic chuck.

[0025] The width of the mask pattern may be smaller than the width of the through opening.

[0026] The width of the mask pattern may be the same as the width of the through opening.

[0027] The width of the mask pattern may be greater than the width of the through opening.

[0028] The method may further include forming a common voltage line on the substrate, and the auxiliary electrode may be electrically connected to the common voltage line.

[0029] The method may further include forming a plurality of pixel electrodes on the substrate, wherein the auxiliary electrode and the plurality of pixel electrodes may be disposed on the same conductive layer and may include the same material.

[0030] The step of forming the through opening by patterning the insulating layer may include forming the pixel opening overlapping the plurality of pixel electrodes.

[0031] According to an embodiment, by ensuring that there is no resistance layer between the auxiliary electrode and the common electrode when the auxiliary electrode and the common electrode are in contact, electrical connection between the common electrode and the auxiliary electrode can be achieved, particle generation can be eliminated, the occurrence of dark spots can be prevented, the increase of invalid space can be prevented, the manufacturing cost of the display device can be reduced, and the yield can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 is a schematic plan view of an electrode layer and a common voltage line provided in a pixel in a display area of ​​a display device according to an embodiment.

[0033] Figure 2 is a schematic plan view of a pixel and an auxiliary electrode in a display area of ​​a display device according to an embodiment.

[0034] Figure 3 is a schematic plan view of an auxiliary electrode of a display device according to an embodiment.

[0035] Figure 4 It is along Figure 3 The line A1-A2 is intercepted Figure 3 A schematic cross-sectional view of a display device shown in FIG.

[0036] Figure 5 is a schematic cross-sectional view of a pixel of a display device according to an embodiment.

[0037] Figure 6 is a schematic plan view of an auxiliary electrode of a display device according to an embodiment.

[0038] Figure 7 It is taken along line B1-B2 Figure 6 A schematic cross-sectional view of a display device shown in FIG.

[0039] Figure 8 is a schematic plan view of an auxiliary electrode of a display device according to an embodiment.

[0040] Fig. 9 It is taken along line C1-C2 Figure 8 A schematic cross-sectional view of a display device shown in FIG.

[0041] Fig.10 is a schematic cross-sectional view of a display device in a process step of a method for manufacturing the display device according to an embodiment.

[0042] Figures 11 to 13 is a schematic diagram illustrating positions of mask patterns in process steps of a method for manufacturing a display device according to an embodiment.

[0043] Fig.14 and Fig.15 is a schematic cross-sectional view of a display device in sequential process steps of a method of manufacturing the display device according to an embodiment.

[0044] Fig.16 2 is a schematic diagram illustrating mask patterns in process steps of a method for manufacturing a display device according to an embodiment.

[0045] Fig.17 2 is a schematic diagram illustrating a mask pattern at a process stage of a method for manufacturing a display device according to an embodiment.

[0046] Fig.18 and Fig.19 2 is a schematic cross-sectional view of a display device at sequential process steps in a method for manufacturing a display device according to an embodiment.

[0047] Fig. 20 and Fig.21 2 is a schematic cross-sectional view of a display device at sequential process steps in a method for manufacturing a display device according to an embodiment. DETAILED DESCRIPTION

[0048] Hereinafter, various embodiments of the disclosure will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement the disclosure.

[0049] The disclosure may be embodied in many different forms and is not limited to the embodiments described herein.

[0050] In order to more clearly explain the disclosure, irrelevant or repeated descriptions may be omitted, and the same or similar components may be assigned the same reference numerals and / or reference symbols throughout the specification.

[0051] Furthermore, the size and thickness of each component shown in the drawings may be arbitrarily illustrated for convenience of explanation, and thus the disclosure is not necessarily limited to the size and thickness of each component shown.

[0052] In the drawings, dimensions such as thickness may be exaggerated to more clearly show various layers and regions.

[0053] When a component of a layer, film, region, or plate is referred to as being “on” or “on” another component, this includes not only the case where the component is “directly on” the other component but also the case where there are other components between the two components.

[0054] In contrast, when a component is referred to as being “directly on” another component, it means that there are no other components present therebetween.

[0055] “Above” or “on” a reference component means being above or below the reference component, and does not necessarily mean being “above” or “on” it in a direction opposite to gravity.

[0056] Throughout the specification, when a component is referred to as “including,” “comprising,” or “having” a certain component, it means that the component may further include other components rather than excluding other components, unless specifically stated otherwise.

[0057] Throughout the specification, when reference is made to "on a plane" or "in a plan view", this means when the target portion is viewed from above, and when reference is made to "in section" or "in a cross-sectional view", this means when the section of the target portion is cut vertically and viewed from the side.

[0058] As used herein, the term "approximately" or "substantially" is inclusive of the stated value and means within an acceptable range of deviation for the particular value as determined by one of ordinary skill in the art, taking into account the measurement in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system). For example, "approximately" can mean within one or more standard deviations, or within ±30%, ±20%, ±10%, ±5% of the stated value.

[0059] The term "and / or" includes all combinations of one or more of the related configurations that can be defined. For example, "A and / or B" can be understood to mean "A, B, or A and B".

[0060] For the purpose of the present disclosure, the phrase "at least one of A and B" may be interpreted as only A, only B, or any combination of A and B. In addition, "at least one of X, Y, and Z" and "at least one selected from the group consisting of X, Y, and Z" may be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z.

[0061] Unless otherwise defined or implied herein, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art to which the present disclosure belongs. It will be further understood that terms (such as those defined in commonly used dictionaries) should be interpreted as having a meaning consistent with their meaning in the relevant art and the context of the disclosure, and should not be interpreted in an ideal or overly formal sense, unless explicitly defined as such herein.

[0062] Will refer to Figures 1 to 5 The structure of the display device according to the embodiment is described.

[0063] Figure 1 is a schematic plan view of an electrode layer and a common voltage line in a pixel in a display area of ​​a display device according to an embodiment, Figure 2 is a schematic plan view of a pixel and an auxiliary electrode in a display area of ​​a display device according to an embodiment.

[0064] Reference Figure 1 and Figure 2 The display device according to the embodiment may include one or more pixels PX, and the pixel PX may be a unit capable of displaying an image.

[0065] like Figure 2 As shown in FIG. 1 , the pixels PX may be arranged substantially in a matrix form on a plane, but the disclosure is not limited thereto, and the pixels PX may be repeatedly arranged according to various rules.

[0066] Reference Figure 1 , each pixel PX may include one or more sub-pixels PX1 , PX2 , and PX3 .

[0067] The sub-pixels PX1 , PX2 , and PX3 included in each pixel PX may display light of different colors.

[0068] For example, the sub-pixels PX1 , PX2 , and PX3 may display light of basic colors such as red, green, and blue.

[0069] The display device may display images of various colors by combining lights of various brightnesses of different basic colors displayed by the sub-pixels PX1 , PX2 , and PX3 .

[0070] Each subpixel PX1, PX2, and PX3 may include pixel electrodes 191a, 191b, and 191c and one or more transistors electrically connected to the pixel electrodes 191a, 191b, and 191c, which can receive data signals including brightness information of light being displayed.

[0071] The pixel electrodes 191a, 191b, and 191c may be located in the same layer on the substrate and may include the same material; the layer in which the pixel electrodes 191a, 191b, and 191c are located may be referred to as a pixel electrode layer.

[0072] Each pixel electrode 191a, 191b, and 191c may be electrically connected to each transistor formed in each subpixel PX1, PX2, and PX3 through an opening 1184 which is a hole formed in at least one insulating layer between the substrate and the pixel electrodes 191a, 191b, and 191c.

[0073] The display device according to the embodiment may include one or more common voltage lines 170 transmitting a common voltage and one or more auxiliary electrodes 195 .

[0074] The common voltage line 170 may extend substantially in the y-direction.

[0075] The common voltage line 170 may be positioned in an x-direction perpendicular to the y-direction for each of the one or more pixels PX.

[0076] Figure 1 and Figure 2 An example is shown in which one common voltage line 170 is positioned for each pixel PX in the x direction, but the disclosure is not limited thereto.

[0077] The auxiliary electrode 195 may be positioned one by one in the x direction or the y direction for each of one or two or more pixels PX.

[0078] Figure 1 and Figure 2 An example is shown in which the auxiliary electrode 195 is formed for each pixel PX in each of the x direction and the y direction, but the disclosure is not limited thereto.

[0079] The auxiliary electrode 195 may be located on a different conductive layer from the common voltage line 170 on the substrate.

[0080] At least a portion of each auxiliary electrode 195 may overlap the common voltage line 170 in a z direction perpendicular to the x and y directions.

[0081] A portion of the auxiliary electrode 195 overlapping the common voltage line 170 may be electrically connected to the common voltage line 170 through at least one opening 1182 of the insulating layer between the common voltage line 170 and the auxiliary electrode 195 .

[0082] Reference Figure 2 , the light emitting layer opening 1370 may be located on some of the auxiliary electrodes 195 or on all of the auxiliary electrodes 195 .

[0083] The auxiliary electrode 195 overlapping the light emitting layer opening 1370 may be electrically connected to the underlying common voltage line 170 through the opening 1182 .

[0084] The auxiliary electrode 195 that does not overlap the light emitting layer opening 1370 may also be electrically connected to the common voltage line 170 through the opening 1182 .

[0085] However, according to an embodiment, at least some of the auxiliary electrodes 195 that do not overlap the light emitting layer opening 1370 may not overlap the opening 1182 .

[0086] The auxiliary electrode 195 and the pixel electrode layer where the pixel electrodes 191 a , 191 b , and 191 c are located may be located on the same conductive layer and may include the same conductive material, but the embodiment is not limited thereto.

[0087] The planar shape of the light emitting layer opening 1370 may be various, such as a circle, an ellipse, or a polygon.

[0088] In the present embodiment, the description will focus on an embodiment in which the light emitting layer opening 1370 is circular, but the embodiment is not limited thereto.

[0089] Will refer to Figures 3 to 5 A detailed structure of a display device according to an embodiment is described.

[0090] Figure 3 is a schematic plan view of an auxiliary electrode of a display device according to an embodiment, Figure 4 It is taken along line A1-A2 Figure 3 A schematic cross-sectional view of a display device shown in FIG. Figure 5 is a schematic cross-sectional view of one pixel of the display device according to the embodiment.

[0091] The display device according to the embodiment may include a substrate 110 , which may include glass, quartz, or plastic such as polyimide, and a buffer layer 111 , which may be an insulating layer and may be located on the substrate 110 .

[0092] The first conductive layer including the light blocking pattern 177 may be located between the substrate 110 and the buffer layer 111 .

[0093] A semiconductor layer including a channel region 1132 and conductive regions 1131 and 1133 located at sides (eg, both sides or double sides) of the channel region 1132 may be located on the buffer layer 111 .

[0094] The conductive region 1131 located on one side of one channel region 1132 may be a source region, and the conductive region 1133 located on the other side may be a drain region, and vice versa.

[0095] The source region and the drain region may be referred to as a source electrode and a drain electrode, respectively.

[0096] The first insulating layer 120 may be located on the semiconductor layer.

[0097] A second conductive layer including a gate electrode 1155 and a lower electrode 1153 may be positioned on the first insulating layer 120 .

[0098] The gate electrode 1155 may overlap the channel region 1132 in the z-direction.

[0099] The gate electrode 1155 may be electrically connected to the lower electrode 1153 , and they may be formed integrally or integrally with each other.

[0100] The channel region 1132 , the conductive regions 1131 and 1133 , and the gate electrode 1155 may together form a transistor.

[0101] The second insulating layer 160 may be located on the gate electrode 1155 and the lower electrode 1153 .

[0102] A third conductive layer including an upper electrode 1154 and a common voltage line 170 may be located on the second insulating layer 160 .

[0103] The upper electrode 1154 may form a capacitor by overlapping the lower electrode 1153 with the second insulating layer 160 therebetween.

[0104] The lower electrode 1153 may also overlap the light blocking pattern 177 , with the first insulating layer 120 interposed between the lower electrode 1153 and the light blocking pattern 177 .

[0105] The upper electrode 1154 may be electrically connected to the conductive region 1133 of the transistor through an opening 165 formed in the second insulating layer 160 and the first insulating layer 120 .

[0106] The third insulating layer 180 may be located on the common voltage line 170 and the upper electrode 1154 .

[0107] The third insulating layer 180 may include a first protective layer 180 a and a second protective layer 180 b .

[0108] The third insulating layer 180 may include one or more openings 1184 and one or more openings 1182 located on the common voltage line 170 .

[0109] At least one of the first conductive layer, the second conductive layer and the third conductive layer may include at least one of a metal (such as copper (Cu), aluminum (Al), magnesium (Mg), silver (Ag), gold (Au), platinum (Pt), palladium (metal including Pd), nickel (Ni), neodymium (Nd), iridium (Ir), molybdenum (Mo), tungsten (W), titanium (Ti), chromium (Cr), tantalum (Ta), etc.), an alloy thereof and / or a metal oxide (such as indium tin oxide (ITO) and indium zinc oxide (IZO)).

[0110] Each of the first conductive layer, the second conductive layer, and the third conductive layer may be made of a single layer or a plurality of layers.

[0111] For example, at least one of the first conductive layer, the second conductive layer, and the third conductive layer may have a multi-layer structure including a lower layer including titanium, a middle layer including copper, and an upper layer including ITO.

[0112] At least one of the buffer layer 111, the first insulating layer 120, the second insulating layer 160, and the third insulating layer 180 may be made of, for example, silicon nitride (SiN x ), silicon oxide (SiO x ), inorganic insulating materials such as silicon oxynitride (SiON) and / or organic insulating materials such as polyimide, acrylic polymer or siloxane polymer.

[0113] The first protective layer 180 a of the third insulating layer 180 may be made of an inorganic insulating material, and the second protective layer 180 b may be made of an organic insulating material.

[0114] A fourth conductive layer including the auxiliary electrode 195 may be positioned on the third insulating layer 180 .

[0115] The auxiliary electrode 195 may be electrically connected to the common voltage line 170 through the opening 1182 .

[0116] One or more pixel electrodes 191 may be located on the third insulating layer 180 .

[0117] The pixel electrode 191 may include Figure 1 One or more pixel electrodes 191a, 191b and 191c are shown in FIG.

[0118] According to an embodiment, the pixel electrode 191 and the auxiliary electrode 195 may be located on the same conductive layer, for example, a fourth conductive layer.

[0119] For example, the pixel electrode 191 and the auxiliary electrode 195 may include the same material and may be formed together in the same process.

[0120] In this case, the fourth conductive layer may include a transparent metal oxide such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0121] The fourth conductive layer may be made of a multi-layer or a single layer, such as three layers in which a layer including ITO, a layer including silver (Ag), and a layer including ITO are sequentially stacked.

[0122] According to an embodiment, the pixel electrode 191 and the auxiliary electrode 195 may be located in different conductive layers and may include different conductive materials.

[0123] The pixel electrode 191 may be electrically connected to the upper electrode 1154 through the opening 1184 .

[0124] A fourth insulating layer 350 may be located on the auxiliary electrode 195 and the pixel electrode 191 .

[0125] The fourth insulating layer 350 may include an organic insulating material such as polyimide, polyamide, acrylic resin, benzocyclobutene, or phenol resin, or a silicon dioxide-based inorganic insulating material.

[0126] The fourth insulating layer 350 may have a through opening 1350 overlapping the auxiliary electrode 195 and a pixel opening 351 overlapping the pixel electrode 191 in the z direction.

[0127] In the xy plane view, the through opening 1350 may not overlap with the opening 1182 of the third insulating layer 180 but may be spaced apart from the opening 1182 of the third insulating layer 180 .

[0128] An xy plane view or an xy plane image refers to, for example, a plane view when a target portion is viewed from above in the z direction.

[0129] The light emitting layer 370 may be located on the fourth insulating layer 350 .

[0130] The light emitting layer 370 may include a low molecular organic material or a high molecular organic material such as poly (3,4-ethylenedioxythiophene) (PEDOT).

[0131] The light emitting layer 370 may include one or more of a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), and an electron injection layer (EIL). It may also include a plurality of layers.

[0132] The light emitting layer 370 may be located in the pixel opening 351 , and may include a portion located on the fourth insulating layer 350 .

[0133] At least a portion of the light emitting layer 370 may be formed by a deposition process.

[0134] The light emitting layer 370 may have a light emitting layer opening 1370 overlapping the auxiliary electrode 195 .

[0135] The light emitting layer opening 1370 may overlap at least a portion of the through opening 1350 of the fourth insulating layer 350 .

[0136] Reference Figure 3 and Figure 4 , the light emitting layer opening 1370 of the light emitting layer 370 according to the embodiment may be located within the edge of the through opening 1350 of the fourth insulating layer 350 .

[0137] A portion of the light emitting layer 370 may be located in the through opening 1350 of the fourth insulating layer 350 .

[0138] According to an embodiment, a portion of the light emitting layer opening 1370 may overlap a portion of an edge of the through opening 1350 of the fourth insulating layer 350 .

[0139] At least a portion of the light emitting layer 370 may be located within the pixel opening 351 of the fourth insulating layer 350 and may contact the pixel electrode 191 .

[0140] The common electrode 270 is located on the light emitting layer 370 .

[0141] The common electrode 270 may be formed of a single conductor across one or more pixels.

[0142] The common electrode 270 may be entirely located on the substrate 110 .

[0143] The common electrode 270 may be electrically connected to the auxiliary electrode 195 through the light emitting layer opening 1370 of the light emitting layer 370 .

[0144] The common electrode 270 is electrically connected to the common voltage line 170 through the auxiliary electrode 195 and may receive a common voltage.

[0145] The common electrode 270 may include a metal material including silver (Ag) or a transparent metal oxide such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0146] The pixel electrode 191 , the light emitting layer 370 , and the common electrode 270 of each of the sub-pixels PX1 , PX2 , and PX3 may together form a light emitting diode ED.

[0147] The pixel electrode 191 may be an anode, and the common electrode 270 may be a cathode.

[0148] Will refer to Figure 6 and Figure 7 As described previously Figure 1 A display device according to an embodiment will be described below.

[0149] Figure 6 is a schematic plan view of an auxiliary electrode of a display device according to an embodiment, Figure 7 It is taken along line B1-B2 Figure 6 A schematic cross-sectional view of a display device shown in FIG.

[0150] Reference Figure 6 and Figure 7 According to the display device of the embodiment and the above Figures 1 to 5 The difference of the display device shown in the figure may be at least that an edge of the light-emitting layer opening 1370 of the light-emitting layer 370 is adjacent to the fourth insulating layer 350, and an edge of the light-emitting layer opening 1370 of the light-emitting layer 370 can be aligned to basically coincide with an edge of the through opening 1350 of the fourth insulating layer 350.

[0151] Therefore, the light emitting layer 370 may not be substantially located in the through opening 1350 of the fourth insulating layer 350 .

[0152] A side surface of the penetration opening 1350 of the fourth insulating layer 350 may be inclined at an angle, or may form a substantially flat surface together with a side surface of the light emitting layer opening 1370 .

[0153] Will refer to Figure 8 and Fig. 9 As described previously Figure 1 A display device according to an embodiment will be described below.

[0154] Figure 8 is a schematic plan view of an auxiliary electrode of a display device according to an embodiment, Fig. 9 It is taken along line C1-C2 Figure 8 A schematic cross-sectional view of a display device shown in FIG.

[0155] Reference Figure 8 and Fig. 9 According to the display device of the embodiment and the above Figures 1 to 5 The difference between the display device shown in the figure may be at least that an edge of the light emitting layer opening 1370 of the light emitting layer 370 is adjacent to the fourth insulating layer 350 , and the through opening 1350 of the fourth insulating layer 350 is located inside the edge of the light emitting layer opening 1370 of the light emitting layer 370 .

[0156] The light emitting layer opening 1370 exposes at least a portion of the upper surface of the fourth insulating layer 350 around the through opening 1350 of the fourth insulating layer 350 , thereby exposing the fourth insulating layer 350 around the through opening 1350 and at least a portion of the upper surface may not be covered by the light emitting layer 370 .

[0157] The planar size of the light emitting layer opening 1370 may be greater than the planar size of the through opening 1350 of the fourth insulating layer 350 .

[0158] Will refer to Figures 10 to 16 As described previously Figure 1 A method of manufacturing a display device according to an embodiment will be described below.

[0159] Fig.10 is a schematic cross-sectional view of a display device during a process step in a method for manufacturing a display device according to an embodiment, Figures 11 to 13 is a schematic diagram showing the position of a mask pattern during a process step in a method for manufacturing a display device according to an embodiment, Fig.14 and Fig.15 is a schematic cross-sectional view of a display device during sequential process steps in a method for manufacturing a display device according to an embodiment, Fig.16 2 is a schematic diagram illustrating positions of mask patterns at process steps in a method for manufacturing a display device according to an embodiment.

[0160] Reference Fig.10 After forming multiple layers such as a plurality of common voltage lines 170, a plurality of auxiliary electrodes 195, etc. on the substrate 110, a fourth insulating layer 350 may be formed on the auxiliary electrodes 195 and patterned to form through openings 1350, thereby forming a display device 800 of the process steps.

[0161] Next, the light emitting layer 370 may be stacked on the fourth insulating layer 350 .

[0162] At least some of the plurality of layers included in the light emitting layer 370 may be stacked using a deposition process.

[0163] Next, refer to Fig.11 , a plurality of mask patterns 510 may be formed on the main substrate 500 .

[0164] The mask pattern 510 may include an organic material such as polyimide (PI), but is not limited thereto, and may include an organic material and an inorganic material, or it may include an inorganic material.

[0165] The mask pattern 510 may have different upper and lower surface widths in a cross-sectional view, and may have a substantially trapezoidal cross-sectional shape.

[0166] Fig.11 An example is shown in which an area of ​​a lower surface of the mask pattern 510 closer to the main substrate 500 is larger than an area of ​​an upper surface.

[0167] Positions and intervals of the mask patterns 510 may correspond to the through openings 1350 of the display device 800 .

[0168] Next, the mask pattern 510 may be transferred to the transfer substrate 400 .

[0169] In this step, the mask pattern 510 may be easily transferred by using a laser, and the transfer substrate 400 may include an electrostatic chuck.

[0170] This step can be carried out in the atmosphere.

[0171] After transferring the mask pattern 510 , the main substrate 500 may be removed using a vacuum chuck.

[0172] Next, refer to Fig.12 , the transfer substrate 400 to which the mask pattern 510 is attached may be aligned on the display device 800 .

[0173] At this time, the mask pattern 510 may be aligned at a position corresponding to the through opening 1350 of the display device 800 and at a position where a light emitting layer opening is to be formed.

[0174] Next, refer to Fig.13 , the mask pattern 510 is transferred to the display device 800 .

[0175] Next, refer to Fig.14 , each mask pattern 510 transferred onto the display device 800 may be transferred and positioned at a position corresponding to each through opening 1350 of the fourth insulating layer 350 .

[0176] According to an embodiment, each mask pattern 510 may be located inside an edge of a corresponding through opening 1350 .

[0177] The width of the mask pattern 510 on the xy plane may be smaller than the width of the through opening 1350 on the xy plane.

[0178] Next, refer to Fig.15 , a light emitting material for forming the light emitting layer 370 may be stacked on the display device 800 to which the mask pattern 510 has been transferred.

[0179] The stacking of the light emitting materials can be performed using a deposition process, an inkjet process, or the like.

[0180] The stacked light emitting material layer may overlap the fourth insulating layer 350 and the mask pattern 510 described above, and may include a light emitting material layer 370 a deposited on the mask pattern 510 .

[0181] Next, refer to Fig.16, the mask pattern 510 of the display device 800 may be moved back toward the transfer substrate 400 using the transfer substrate 400 to remove the mask pattern 510 of the display device 800 from the display device 800 .

[0182] The transfer substrate 400 may include an electrostatic chuck.

[0183] This step can be performed in a vacuum.

[0184] Then, the light emitting material layer 370a may also be removed from the display device 800 together with the removed mask pattern 510 to form the above-mentioned Figure 3 and Figure 4 The light emitting layer 370 shown in FIG.

[0185] Due to the characteristics of this process, there is no risk of residues or particles of the light emitting layer 370 being generated around the edge of the light emitting layer opening 1370 , and thus the edge of the light emitting layer opening 1370 can be formed neatly.

[0186] Next, the common electrode 270 may be formed on the display device 800 .

[0187] The common electrode 270 may be electrically connected to the auxiliary electrode 195 through the light emitting layer opening 1370 .

[0188] In other words, by forming the light emitting layer 370 using the mask pattern 510 , the resistance layer between the common electrode 270 and the auxiliary electrode 195 may be eliminated, thereby achieving electrical connection between the common electrode 270 and the auxiliary electrode 195 .

[0189] Furthermore, in the case of other processes in which a light emitting layer is first stacked and then laser drilling of the light emitting layer is used to form a light emitting layer opening, there are no particles or light emitting layer residues that may be generated, and thus defects such as dark spots can be prevented from occurring.

[0190] Since it may not be necessary to create a separate space for laser drilling in the display area, an increase in invalid space may be prevented, the manufacturing cost of the display device may be reduced, and the yield rate may be improved.

[0191] Will refer to Fig.17 As described previously Figure 1 A method of manufacturing a display device according to an embodiment will be described below.

[0192] Fig.17 is a schematic diagram illustrating a mask pattern in one process step of a method for manufacturing a display device according to an embodiment.

[0193] Reference Fig.17 The manufacturing method of the display device according to the embodiment is the same as that according to the above Figures 10 to 16The difference between the manufacturing method of the display device of the embodiment shown in the embodiment of the present invention and the method of manufacturing the display device of the embodiment of the present invention may be at least that: Figures 11 to 13 According to the process shown in FIG. 8 , the mask pattern 510 formed on the main substrate 500 may be directly transferred to the display device 800 .

[0194] In this case, the mask pattern 510 formed on the main substrate 500 may have different upper and lower widths in a cross-sectional view, and the area of ​​the lower surface closest to the main substrate 500 among the surfaces of the mask pattern 510 may be different, and the area of ​​the lower surface may be smaller than the area of ​​the top surface.

[0195] Will refer to Fig.18 and Fig.19 As described previously Figure 1 A method of manufacturing a display device according to an embodiment will be described below.

[0196] Fig.18 and Fig.19 2 is a schematic cross-sectional view of a display device at sequential process steps in a method for manufacturing a display device according to an embodiment.

[0197] Reference Fig.18 and Fig.19 The manufacturing method of the display device according to this embodiment is different from the above-mentioned method according to Figures 10 to 16 The method of manufacturing the display device of the embodiment shown in may be different at least in that an edge of each mask pattern 510 transferred onto the display device 800 may be aligned to substantially coincide with an edge of a corresponding through opening 1350 .

[0198] The width of the mask pattern 510 on the xy plane may be substantially the same as the width of the through opening 1350 on the xy plane.

[0199] In the case where the light emitting material layer 370a is removed from the display device 800 together with the removed mask pattern 510, the above-mentioned Figure 6 and Figure 7 The light emitting layer 370 shown in FIG.

[0200] Will refer to Fig. 20 and Fig.21 As described previously Figure 1 A method of manufacturing a display device according to an embodiment will be described below.

[0201] Fig. 20 and Fig.21 2 is a schematic cross-sectional view of a display device at sequential process steps in a method for manufacturing a display device according to an embodiment.

[0202] Reference Fig. 20 and Fig.21The manufacturing method of the display device according to this embodiment is different from the above-mentioned method according to Figures 10 to 16 The difference between the method for manufacturing the display device of the embodiment shown in may be at least that an edge of the light emitting layer opening 1370 corresponding to an edge of each mask pattern 510 may be transferred to the display device 800 .

[0203] The width of the mask pattern 510 on the xy plane may be greater than the width of the through opening 1350 on the xy plane.

[0204] In the case where the light emitting material layer 370a is removed from the display device 800 together with the removed mask pattern 510, the above-mentioned Figure 8 and Fig. 9 The light emitting layer 370 shown in FIG.

[0205] The above description is an example of the disclosed technical features, and those skilled in the art will be able to make various modifications and changes.Therefore, the above disclosed embodiments can be implemented individually or in combination with each other.

[0206] The embodiments disclosed in the disclosure are not intended to limit the disclosed technical spirit, but are intended to describe the disclosed technical spirit, and the scope of the disclosed technical spirit is not limited by these embodiments. The disclosed protection scope should be interpreted by the attached claims, and should be interpreted as that all technical spirits within the equivalent scope are included in the disclosed scope.

Claims

1. A display device, comprising: An auxiliary electrode, disposed on the substrate and transmitting a common voltage; An insulating layer, disposed on the auxiliary electrode; A light-emitting layer is disposed on the insulating layer; as well as A common electrode is disposed on the light-emitting layer, wherein: The insulating layer has a through opening disposed above the auxiliary electrode, The light emitting layer is disposed above the auxiliary electrode and has a light emitting layer opening overlapping the through opening, The common electrode is electrically connected to the auxiliary electrode through the light emitting layer opening.

2. The display device according to claim 1, further comprising: a common voltage line, disposed on the substrate and transmitting the common voltage, Wherein, the auxiliary electrode is electrically connected to the common voltage line.

3. The display device according to claim 1, wherein: The display device comprises a plurality of pixels. Each of the plurality of pixels includes a plurality of sub-pixels capable of displaying light of different colors, Each of the plurality of sub-pixels includes a transistor and a light emitting diode, and The light emitting diode includes a pixel electrode, the light emitting layer and the common electrode.

4. The display device according to claim 3, wherein: The auxiliary electrode and the pixel electrode are disposed on the same conductive layer and include the same material.

5. The display device according to claim 3, wherein: The insulating layer includes a pixel opening overlapping the pixel electrode.

6. The display device according to claim 2, wherein: A portion of the auxiliary electrode overlapping the common voltage line is electrically connected to the common voltage line through at least one opening of the insulating layer between the auxiliary electrode and the common voltage line.

7. The display device according to claim 1, wherein: The plane shape of the opening of the light emitting layer is circular, elliptical or polygonal.

8. The display device according to claim 1, wherein: In a plan view, the light emitting layer opening is arranged within an edge of the through opening; or An edge of the light emitting layer opening is adjacent to the insulating layer, and in a plan view, the edge of the light emitting layer opening is aligned to coincide with an edge of the through opening; or In a plan view, the through opening is disposed within an edge of the light emitting layer opening.

9. A method for manufacturing a display device, the method comprising the following steps: forming an auxiliary electrode on the substrate, The through opening is formed by laminating and patterning an insulating layer on the auxiliary electrode, positioning a mask pattern at a position overlapping the through opening, stacking a light emitting layer on the mask pattern and the insulating layer, removing the mask pattern and forming a light emitting layer opening in the light emitting layer, and forming a common electrode on the light emitting layer, Wherein, the common electrode is electrically connected to the auxiliary electrode through the light emitting layer opening.

10. The method for manufacturing a display device according to claim 9, wherein: The mask pattern includes an organic material including polyimide.

11. The method for manufacturing a display device according to claim 9, wherein: Positioning the mask pattern at a position overlapping the through opening includes forming the mask pattern on a master substrate.

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