Preparation process of light-emitting device based on grid regulation and control of gray scale

Abstract

The invention discloses a preparation process of a light-emitting device based on grid regulation and control gray scale. The preparation process comprises the following steps: coating a first semiconductor layer on a substrate to uniformly prepare a first active layer pattern and a second active layer pattern; doping or coating is carried out on the first active layer pattern and the second active layer pattern, and a source electrode and a drain electrode of a thin film transistor switch and an amplification field effect transistor are prepared; uniformly preparing a grid regulation and control electrode, a voltage source extraction electrode and a data lead extraction electrode of the light-emitting unit; preparing a silicon dioxide insulating layer pattern; preparing a second electrode on the silicon dioxide insulating layer pattern; preparing a light-emitting functional layer on the second electrode; and finally, uniformly preparing a first electrode, a grid electrode of the thin film transistor switch and a grid electrode of the amplification field effect transistor. The invention provides the light-emitting device which can realize self-adaptive gate voltage regulation according to the gray-scale value change during unified gate voltage regulation and control, and the preparation process of the light-emitting device is simplified.

Description

Technical Field

[0001] The invention relates to the field of optoelectronic display, and in particular to a preparation process of a light-emitting device based on gate grayscale regulation. Background Art

[0002] The light-emitting devices in optoelectronic displays are an important component of display devices. They present images or information by emitting light. The light-emitting principle of many light-emitting devices is based on the fact that after power is turned on, electrons and holes combine in the light-emitting layer to form excitons, and when the excitons recombine, they release energy and emit light, such as QLED (quantum dot light-emitting diodes) and OLED (organic light-emitting diodes). These light-emitting devices have the advantages of rich color performance, high contrast, fast response speed, wide viewing angle, energy saving and environmental protection. The luminous efficiency or luminous brightness of these light-emitting devices is greatly affected by the carrier recombination process. Different functional layers and quantum dots are usually used to obtain the optimal device efficiency. This experimental process requires a lot of time, materials and labor costs. Therefore, gate regulation has emerged. Through gate regulation, a built-in electric field can be constructed in these light-emitting devices to achieve the regulation of carrier mobility and the regulation of luminous efficiency, which helps to improve the luminous efficiency.

[0003] Generally speaking, when the grayscale value of a gate-controlled light-emitting device is larger, the required luminous efficiency is higher, and more energy can be saved. However, when the existing light-emitting devices are uniformly gate-controlled, it is rare to be able to adaptively adjust the gate voltage according to the change of a single grayscale value, resulting in energy waste. Currently, there is a lack of a light-emitting device that can adjust the gate voltage individually according to the change of a single grayscale value during the uniform gate voltage control process and its corresponding preparation process. Summary of the invention

[0004] In view of some of the above-mentioned defects of the prior art, the technical problem to be solved by the present invention is to provide a preparation process of a light-emitting device based on gate-controlled grayscale, aiming to provide a light-emitting device that can adaptively adjust the gate voltage according to the change of grayscale value when performing unified gate voltage control, and simplify its preparation process.

[0005] To achieve the above object, the present invention discloses a preparation process of a light-emitting device based on gate-controlled grayscale, the process comprising:

[0006] Step S1, coating a first semiconductor layer on a substrate, and performing photolithography on the first semiconductor layer to form a first active layer pattern and a second active layer pattern; wherein the light-emitting device includes a light-emitting unit, a thin film transistor switch, and an amplifying field effect transistor, the first active layer is the active layer of the thin film transistor switch, and the second active layer is the active layer of the amplifying field effect transistor;

[0007] Step S2, performing doping or coating on the first active layer pattern and the second active layer pattern to prepare the source and drain of the thin film transistor switch and the amplifying field effect transistor;

[0008] Step S3, coating a second conductive layer on the substrate, the source and drain of the thin film transistor switch, and the source and drain of the amplifying field effect transistor, and performing photolithography on the second conductive layer to form a gate control electrode, a voltage source lead electrode, and a data lead electrode of the light emitting unit; wherein the gate control electrode is connected to the drain of the amplifying field effect transistor, the voltage source lead electrode is built on the source of the amplifying field effect transistor, and the data lead electrode is built on the source of the thin film transistor switch;

[0009] Step S4, coating a silicon dioxide insulating layer on the gate control electrode, the source and drain of the thin film transistor switch, and the source and drain of the amplifying field effect transistor, and performing photolithography on the silicon dioxide insulating layer to form a silicon dioxide insulating layer pattern;

[0010] Step S5, preparing a second electrode on the silicon dioxide insulating layer pattern; preparing a light-emitting functional layer on the second electrode;

[0011] Step S6, coating a transparent conductive layer on the silicon dioxide insulating layer and the light-emitting functional layer, and performing photolithography on the transparent conductive layer to form a first electrode, a gate of the thin film transistor switch, and a gate of the amplifying field effect transistor;

[0012] Step S7: Use a first metal lead to connect the first electrode to the drain of the thin film transistor switch by drilling a well; use a second metal lead to connect the first electrode to the gate of the amplifying field effect transistor.

[0013] Optionally, the first electrode covers the side of the light-emitting functional layer, and the first metal lead connects the side of the first electrode to the drain of the thin-film transistor switch along the surface of the silicon dioxide insulating layer and through drilling; the second metal lead connects the side of the first electrode to the gate of the amplifying field effect transistor along the surface of the silicon dioxide insulating layer.

[0014] Optionally, the first electrode covers the sides of the light-emitting functional layer and part of the two sides of the silicon dioxide insulating layer, and extends to the gate of the amplifying field effect transistor and the drain of the thin film transistor switch respectively; the first metal lead enters the drain of the thin film transistor switch by drilling a well, and the first metal lead connects the first electrode to the drain of the thin film transistor switch.

[0015] Optionally, the gate of the thin film transistor switch, the gate of the amplifying field effect transistor and the second electrode are uniformly manufactured using the same material and at the same level.

[0016] Optionally, the gate of the thin film transistor switch is connected to a scan lead, the data lead electrode is connected to a data lead, and the voltage source lead electrode is connected to a regulating voltage source.

[0017] Optionally, the light-emitting unit is a quantum dot light-emitting diode, and the light-emitting functional layer includes a hole transport layer, a quantum dot light-emitting layer and an electron transport layer.

[0018] Optionally, the light-emitting unit is an organic light-emitting diode, and the light-emitting functional layer includes a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer and an electron injection layer.

[0019] Optionally, in step S5, preparing a light-emitting functional layer on the second electrode includes:

[0020] According to the type of the light-emitting functional layer, the film preparation is divided into one or more times to form the light-emitting functional layer.

[0021] Optionally, it is characterized in that the first semiconductor layer is semiconductor A silicon, the second conductive layer is a metal conductive layer, and the transparent conductive layer is an indium tin oxide conductive layer.

[0022] Beneficial effects of the present invention: 1. The drain of the thin film transistor switch of the light-emitting device prepared by the present invention is connected to the gate of the amplifying field effect transistor (both are achieved by connecting the first electrode), the source of the amplifying field effect transistor is connected to the regulating voltage source, the regulating voltage source is used to provide the required voltage to the source of the amplifying field effect transistor, and the drain of the amplifying field effect transistor is connected to the gate regulating electrode. When the data lead drives the selected light-emitting unit to make the light-emitting unit emit light, the driving voltage of the data lead is also applied to the gate of the amplifying field effect transistor; when the voltage applied by the regulating voltage source remains unchanged, the driving voltage changes the carrier concentration and conductivity in the channel of the amplifying field effect transistor, thereby controlling the drain current of the amplifying field effect transistor, so that the regulating gate voltage of the gate regulating electrode changes according to the change of the driving voltage. The present invention, through the setting of the amplifying field effect transistor, enables the amplifying field effect transistor to determine the applied regulating gate voltage according to the driving voltage, and the driving voltage also determines the grayscale value of the light-emitting unit, so that the present invention can achieve adaptive gate voltage adjustment according to the change of the grayscale value. Compared with the prior art that uses one-to-one gate voltage regulation to adapt to grayscale value changes, multiple light-emitting units of the present invention can share a regulation voltage source and can also achieve adaptive gate voltage adjustment according to grayscale value changes, effectively reducing the complexity of the gate regulation circuit and saving energy. 2. The present invention places the light-emitting unit, thin-film transistor switch, and some components of the amplifying field-effect transistor on the same level and uses the same material for simultaneous preparation, which greatly simplifies the preparation process and improves the preparation efficiency.

[0023] In summary, the present invention not only provides a light-emitting device that can adaptively adjust the gate voltage according to the change of grayscale value when performing unified gate voltage regulation, but also simplifies the preparation process and improves the preparation efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a schematic diagram of a process for preparing a light-emitting device based on gate-controlled grayscale provided by a specific embodiment of the present invention;

[0025] Figure 2 It is a structural schematic diagram of a stacked structure light emitting device based on grayscale value variation gate regulation provided by a specific embodiment of the present invention;

[0026] Figure 3 is a schematic diagram of changes in a stacked structure light-emitting device in step S1 provided in a specific embodiment of the present invention;

[0027] Figure 4 is a schematic diagram of changes in a stacked structure light-emitting device in step S2 provided in a specific embodiment of the present invention;

[0028] Figure 5is a schematic diagram of changes in a stacked structure light-emitting device in step S3 provided in a specific embodiment of the present invention;

[0029] Figure 6 is a schematic diagram of changes in a stacked structure light-emitting device in step S4 provided in a specific embodiment of the present invention;

[0030] Figure 7 is a schematic diagram of changes in a stacked structure light-emitting device in step S5 provided in a specific embodiment of the present invention;

[0031] Figure 8 is a schematic diagram of changes in a stacked structure light-emitting device in step S6 provided in a specific embodiment of the present invention;

[0032] Fig. 9 is a schematic diagram of changes in a stacked structure light-emitting device in step S7 provided in a specific embodiment of the present invention;

[0033] Fig.10 It is a structural schematic diagram of a stacked structure light-emitting device based on grayscale value change gate regulation provided by a second specific embodiment of the present invention;

[0034] Fig.11 It is a schematic structural diagram of a stacked structure light-emitting device based on grayscale value variation gate regulation provided in the third specific embodiment of the present invention. DETAILED DESCRIPTION

[0035] The present invention discloses a preparation process of a light-emitting device based on gate-controlled grayscale. Those skilled in the art can refer to the content of this article and appropriately improve the technical details. It should be particularly noted that all similar replacements and modifications are obvious to those skilled in the art, and they are all considered to be included in the present invention. The method and application of the present invention have been described through preferred embodiments, and relevant personnel can obviously modify or appropriately change and combine the methods and applications described herein without departing from the content, spirit and scope of the present invention to implement and apply the technology of the present invention.

[0036] The applicant has found through research that, in general, the greater the grayscale value of a gate-controlled light-emitting device, the higher the required luminous efficiency and the more energy can be saved. However, when the existing light-emitting devices are uniformly gate-controlled, it is rare to be able to make adaptive gate voltage adjustments according to changes in individual grayscale values, resulting in energy waste. That is, when a control voltage is used to control multiple light-emitting diodes, it is impossible to make different adaptive adjustments based on the different grayscale value changes of each light-emitting diode. There is currently a lack of corresponding light-emitting devices and preparation methods thereof.

[0037] Therefore, the embodiment of the present invention provides a preparation process of a light-emitting device based on gate-controlled grayscale, such as Figure 1 As shown, the process includes:

[0038] Step S1, coating a first semiconductor layer on a substrate, and performing photolithography on the first semiconductor layer to form a first active layer pattern and a second active layer pattern.

[0039] The light-emitting device includes a light-emitting unit, a thin-film transistor switch and an amplifying field effect transistor. The first active layer is the active layer of the thin-film transistor switch, and the second active layer is the active layer of the amplifying field effect transistor. The light-emitting unit includes a gate control electrode, a gate insulating layer, a first electrode, a light-emitting functional layer and a second electrode. In the embodiment of the present invention, the first electrode is an anode and the second electrode is a cathode. The thin-film transistor switch includes a gate, a drain, a first active layer and an insulating layer; the amplifying field effect transistor includes a gate, a drain, a second active layer and an insulating layer.

[0040] It should be noted that in the embodiment of the present invention, the two active layers can be made of the same material and thus can be prepared uniformly.

[0041] The light emitting device changes in the preparation process of step S1 are as follows: Figure 3 shown.

[0042] Step S2, doping or coating is performed on the first active layer pattern and the second active layer pattern to prepare the source and drain of the thin film transistor switch and the amplifying field effect transistor.

[0043] It should be noted that, because the source and drain of the thin film transistor switch and the source and drain of the amplifying field effect transistor can be made of the same material, they are uniformly prepared at the same level, which simplifies the preparation process and speeds up the preparation efficiency.

[0044] The light emitting device changes in the preparation process of step S2 are as follows: Figure 4 shown.

[0045] Step S3, coating a second conductive layer on the substrate, the source and drain of the thin film transistor switch, and the source and drain of the amplifying field effect transistor, and photolithography the second conductive layer to form a gate control electrode, a voltage source lead electrode, and a data lead electrode of the light emitting unit.

[0046] The gate control electrode is connected to the drain of the amplifying field effect transistor, the voltage source lead electrode is built on the source of the amplifying field effect transistor, and the data lead lead electrode is built on the source of the thin film transistor switch.

[0047] The voltage source lead electrode is mounted on the source of the amplifying field effect transistor, and the voltage source lead electrode is connected to the regulating voltage source, so that the regulating voltage source provides the initial voltage for the amplifying field effect transistor. The gate regulating electrode is connected to the drain of the amplifying field effect transistor, so that the drain of the amplifying field effect transistor can provide the regulating gate voltage for the gate regulating electrode. The data lead lead electrode is mounted on the source of the thin film transistor switch to control the brightness of the light-emitting unit.

[0048] The light emitting device changes in the preparation process of step S3 are as follows: Figure 5 shown.

[0049] Step S4, coating a silicon dioxide insulating layer on the gate control electrode, the source and drain of the thin film transistor switch, and the source and drain of the amplifying field effect transistor, and performing photolithography on the silicon dioxide insulating layer to form a silicon dioxide insulating layer pattern.

[0050] It should be noted that the light emitting unit, the thin film transistor switch and the amplifying field effect transistor all include an insulating layer, so the insulating layer can be prepared uniformly so that the light emitting unit, the thin film transistor switch and the amplifying field effect transistor share the insulating layer.

[0051] The light emitting device changes in the preparation process of step S4 are as follows: Figure 6 shown.

[0052] Step S5, preparing a second electrode on the silicon dioxide insulating layer pattern; and preparing a light-emitting functional layer on the second electrode.

[0053] The light emitting device changes in the step S5 preparation process are as follows: Figure 7 shown.

[0054] Step S6, coating a transparent conductive layer on the silicon dioxide insulating layer and the light-emitting functional layer, and performing photolithography on the transparent conductive layer to form a first electrode, a gate of the thin film transistor switch, and a gate of the amplifying field effect transistor.

[0055] It should be noted that the first electrode, the gate of the thin film transistor switch and the gate of the amplifying field effect transistor can be made of the same material, so they are uniformly prepared at the same level to simplify the preparation process and increase the preparation efficiency.

[0056] The light emitting device changes in the preparation process of step S6 are as follows: Figure 8 shown.

[0057] Step S7, using a first metal lead to connect the first electrode to the drain of the thin film transistor switch by drilling a well; using a second metal lead to connect the first electrode to the gate of the amplifying field effect transistor.

[0058] The light emitting device changes in the preparation process of step S7 are as follows: Fig. 9 shown.

[0059] In the first specific embodiment, the finished light emitting device can be Figure 2 As shown, Figure 2 In the invention, the light-emitting unit includes a first electrode, a light-emitting functional layer, a second electrode, a silicon dioxide insulating layer (shared) and a regulating electrode; the thin-film transistor switch includes a gate, a source, a drain, a first active layer and a silicon dioxide insulating layer (shared); the amplifying field effect transistor includes a gate, a source, a drain, a second active layer and a silicon dioxide insulating layer (shared).

[0060] In a specific embodiment, the first metal film layer, the second metal film layer, and the third metal can be made of metals such as silver, aluminum, lithium, calcium, magnesium, and indium.

[0061] In the second specific embodiment, it can be Fig.10 As shown, the first electrode covers the side of the light-emitting functional layer, the first metal lead connects the side of the first electrode to the drain of the thin-film transistor switch along the surface of the silicon dioxide insulating layer and through drilling a well; the second metal lead connects the side of the first electrode to the gate of the amplifying field effect transistor along the surface of the silicon dioxide insulating layer.

[0062] In the third specific embodiment, it can be Fig.11 As shown, the first electrode covers the sides of the light-emitting functional layer and part of the silicon dioxide insulating layer on both sides, and extends to the gate of the amplifying field effect transistor and the drain of the thin film transistor switch; the first metal lead enters the drain of the thin film transistor switch through a well, and the first metal lead connects the first electrode to the drain of the thin film transistor switch.

[0063] It should be noted that in this embodiment, no second metal lead is required.

[0064] In another specific embodiment, the gate of the thin film transistor switch and the gate and the second electrode of the amplifying field effect transistor are uniformly prepared at the same level using the same material.

[0065] It should be noted that when the gate of the thin film transistor switch and the gate of the amplifying field effect transistor are uniformly prepared with the second electrode, the three are made of the same material and can all be electrodes. In specific applications, it can be decided to uniformly prepare the gate of the thin film transistor switch and the gate of the amplifying field effect transistor with the first electrode or the second electrode depending on the situation.

[0066] In this specific embodiment, the gate of the thin film transistor switch is connected to the scan lead, the data lead electrode is connected to the data lead, and the voltage source lead electrode is connected to the regulating voltage source.

[0067] It should be noted that the scan lead is used to select the light-emitting unit, and the data lead is used to control the brightness of the light-emitting unit.

[0068] In this specific embodiment, the light-emitting unit is a quantum dot light-emitting diode, and the light-emitting functional layer includes a hole transport layer, a quantum dot light-emitting layer and an electron transport layer.

[0069] In another specific embodiment, the light-emitting unit is an organic light-emitting diode, and the light-emitting functional layer includes a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer and an electron injection layer.

[0070] In this specific embodiment, in step S5, a light-emitting functional layer is prepared on the second electrode, comprising:

[0071] According to the type of the light-emitting functional layer, the film preparation is divided into one or more times to form the light-emitting functional layer.

[0072] It should be noted that the type of the light-emitting functional layer determines the number of layers and the preparation method, so it is necessary to apply it according to the material.

[0073] In a specific embodiment, the first semiconductor layer is semiconductor A silicon, the second conductive layer is a metal conductive layer, and the transparent conductive layer is an indium tin oxide conductive layer.

[0074] Advanced Silicon, also known as advanced silicon material, is a high-purity silicon material widely used in the microelectronics industry and is commonly used in semiconductor manufacturing.

[0075] The drain of the thin film transistor switch of the light-emitting device prepared in the embodiment of the present invention is connected to the gate of the amplifying field effect transistor (both are achieved by connecting the first electrode), the source of the amplifying field effect transistor is connected to the regulating voltage source, the regulating voltage source is used to provide the required voltage to the source of the amplifying field effect transistor, and the drain of the amplifying field effect transistor is connected to the gate regulating electrode. When the data lead drives the selected light-emitting unit to make the light-emitting unit emit light, the driving voltage of the data lead is also applied to the gate of the amplifying field effect transistor; when the voltage applied by the regulating voltage source remains unchanged, the driving voltage changes the carrier concentration and conductivity in the channel of the amplifying field effect transistor, thereby controlling the drain current of the amplifying field effect transistor, so that the regulating gate voltage of the gate regulating electrode changes according to the change of the driving voltage. The embodiment of the present invention, through the setting of the amplifying field effect transistor, enables the amplifying field effect transistor to determine the applied regulating gate voltage according to the driving voltage, and the driving voltage also determines the grayscale value of the light-emitting unit, so that the embodiment of the present invention can achieve adaptive gate voltage adjustment according to the change of the grayscale value. Compared with the prior art that adapts to grayscale value changes through one-to-one gate voltage regulation, in the embodiment of the present invention, multiple light-emitting units can share a regulation voltage source and can also achieve adaptive gate voltage adjustment according to grayscale value changes, effectively reducing the complexity of the gate regulation circuit and saving energy.

[0076] The embodiment of the present invention places the light-emitting unit, the thin film transistor switch and some components of the amplifying field effect transistor on the same level and uses the same material for simultaneous preparation, which greatly simplifies the preparation process and improves the preparation efficiency.

[0077] In summary, the embodiments of the present invention not only provide a light-emitting device that can adaptively adjust the gate voltage according to the change of the grayscale value when performing unified gate voltage regulation, but also simplify the preparation process and improve the preparation efficiency.

[0078] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0079] Each embodiment in this specification is described in a related manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0080] The above are only preferred embodiments of the present invention and are not intended to limit the protection scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.

Claims

1. A preparation process of a light-emitting device based on gate-controlled grayscale, characterized in that: The process comprises: Step S1, coating a first semiconductor layer on a substrate, and performing photolithography on the first semiconductor layer to form a first active layer pattern and a second active layer pattern; wherein the light-emitting device includes a light-emitting unit, a thin film transistor switch, and an amplifying field effect transistor, the first active layer is the active layer of the thin film transistor switch, and the second active layer is the active layer of the amplifying field effect transistor; Step S2, performing doping or coating on the first active layer pattern and the second active layer pattern to prepare the source and drain of the thin film transistor switch and the amplifying field effect transistor; Step S3, coating a second conductive layer on the substrate, the source and drain of the thin film transistor switch, and the source and drain of the amplifying field effect transistor, and performing photolithography on the second conductive layer to form a gate control electrode, a voltage source lead electrode, and a data lead electrode of the light emitting unit; wherein the gate control electrode is connected to the drain of the amplifying field effect transistor, the voltage source lead electrode is built on the source of the amplifying field effect transistor, and the data lead electrode is built on the source of the thin film transistor switch; Step S4, coating a silicon dioxide insulating layer on the gate control electrode, the source and drain of the thin film transistor switch, and the source and drain of the amplifying field effect transistor, and performing photolithography on the silicon dioxide insulating layer to form a silicon dioxide insulating layer pattern; Step S5, preparing a second electrode on the silicon dioxide insulating layer pattern; preparing a light-emitting functional layer on the second electrode; Step S6, coating a transparent conductive layer on the silicon dioxide insulating layer and the light-emitting functional layer, and performing photolithography on the transparent conductive layer to form a first electrode, a gate of the thin film transistor switch, and a gate of the amplifying field effect transistor; Step S7: Use a first metal lead to connect the first electrode to the drain of the thin film transistor switch by drilling a well; use a second metal lead to connect the first electrode to the gate of the amplifying field effect transistor.

2. The process for preparing a light-emitting device based on gate-controlled grayscale according to claim 1, characterized in that: The first electrode covers the side of the light-emitting functional layer, the first metal lead connects the side of the first electrode to the drain of the thin film transistor switch along the surface of the silicon dioxide insulating layer and through drilling; the second metal lead connects the side of the first electrode to the gate of the amplifying field effect transistor along the surface of the silicon dioxide insulating layer.

3. The process for preparing a light-emitting device based on gate-controlled grayscale according to claim 1, characterized in that: The first electrode covers the sides of the light-emitting functional layer and part of the two sides of the silicon dioxide insulating layer, and extends to the gate of the amplifying field effect transistor and the drain of the thin film transistor switch respectively; the first metal lead enters the drain of the thin film transistor switch by drilling a well, and the first metal lead connects the first electrode to the drain of the thin film transistor switch.

4. The process for preparing a light-emitting device based on gate-controlled grayscale according to claim 1, characterized in that: The gate of the thin film transistor switch and the gate of the amplifying field effect transistor are uniformly prepared with the second electrode using the same material and at the same level.

5. The process for preparing a light-emitting device based on gate-controlled grayscale according to claim 1, characterized in that: The gate of the thin film transistor switch is connected to the scan lead, the data lead electrode is connected to the data lead, and the voltage source lead electrode is connected to the regulating voltage source.

6. The process for preparing a light-emitting device based on gate-controlled grayscale according to claim 1, characterized in that: The light-emitting unit is a quantum dot light-emitting diode, and the light-emitting functional layer includes a hole transport layer, a quantum dot light-emitting layer and an electron transport layer.

7. The process for preparing a light-emitting device based on gate-controlled grayscale according to claim 1, characterized in that: The light-emitting unit is an organic light-emitting diode, and the light-emitting functional layer includes a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer and an electron injection layer.

8. The process for preparing a light-emitting device based on gate-controlled grayscale according to claim 1, characterized in that: In the step S5, a light-emitting functional layer is prepared on the second electrode, comprising: According to the type of the light-emitting functional layer, the film preparation is divided into one or more times to form the light-emitting functional layer.

9. The process for preparing a light-emitting device based on gate-controlled grayscale according to claim 1, characterized in that: The first semiconductor layer is semiconductor A silicon, the second conductive layer is a metal conductive layer, and the transparent conductive layer is an indium tin oxide conductive layer.

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