A silicon carbide drive and power regulation circuit

By designing a silicon carbide drive and power regulation circuit, and using a single-chip microcomputer and electronic components to achieve 70-100KHz PWM signal conversion and welding machine power regulation, the shortcomings of existing silicon carbide welding machines in frequency and power regulation in high-precision welding are solved, meeting the diverse needs of users.

CN119589062BActive Publication Date: 2025-10-17WUXI GONGXIN ELECTRONIC TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202411902478.3
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-12-23
Publication Date
2025-10-17
Estimated Expiration
2044-12-23

AI Technical Summary

Technical Problem

Existing silicon carbide welding machines lack 70-100KHz frequency modulation and power regulation functions in high-precision welding applications, and cannot meet users' diverse performance and precision requirements.

Method used

A silicon carbide drive and power regulation circuit was designed. The single-chip microcomputer U1, resistors, capacitors, transistors, MOS tubes and toggle switches were used to realize 70-100KHz PWM signal conversion and welding machine power regulation. The PWM frequency was changed by adjusting the position of the toggle switch to meet the needs of different users.

Benefits of technology

It realizes the conversion of 70-100KHz PWM signal and the adjustment of welding machine power, meeting the high-precision welding needs of different users for silicon carbide welding machines.

✦ Generated by Eureka AI based on patent content.

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Abstract

The application discloses a silicon carbide driving and power regulating circuit, which comprises a single-chip microcomputer U1, resistors R23, R44, R43, R15, R36, R39, R37, capacitors C26, C27, a triode N1, a MOS tube N2 and a toggle switch CON3+CON2+CON1, the resistor R23 and the capacitor C23 are connected to 5V, the resistor R21 is connected to 15V, the resistors R44, R45 and R36 are connected to the collector of the triode N1, and the resistor R15 is connected to the emitter of the triode N1. The application can realize 70-100KHz PWM signal conversion and welding machine power regulation, and meets the demand of different users for the power regulation of the silicon carbide welding machine.
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Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of driving power supply, in particular to a silicon carbide driving and power regulating circuit. BACKGROUND

[0002] At present, silicon carbide electric welder is widely used in the welding of various metal materials, especially in the industrial application scenarios which need high-precision welding. In order to meet the efficiency, precision and environmental protection requirements of different users on the silicon carbide electric welder, the silicon carbide driving circuit has the functions of 70-100KHz frequency modulation and power regulation. SUMMARY

[0003] In order to make up for the shortcomings of the prior art, the present application provides a silicon carbide driving and power regulating circuit to solve the problems in the prior art.

[0004] In order to solve the above technical problems, the present application provides the following technical scheme:

[0005] A silicon carbide driving and power regulating circuit, comprising a single-chip microcomputer U1, a resistor R23, a resistor R44, a resistor R43, a resistor R15, a resistor R36, a resistor R39, a resistor R37, a capacitor C26, a capacitor C27, a triode N1, a MOS tube N2 and a toggle switch CON3+CON2+CON1, the resistor R23 and the capacitor C23 are connected to 5V, the resistor R21 is connected to 15V, the resistor R44, the resistor R45 and the resistor R36 are connected to the collector of the triode N1, the resistor R15 is connected to the emitter of the triode N1, the other end of the resistor R39 and the resistor R36 is connected to the base of the triode N1, the two ends of the resistor R37 are respectively connected to the drain and the gate of the triode N2, the source of the triode N2 is connected to the 10 pin of the chip U5, the resistor R27 is connected to the 11 pin of the chip U5, the other end of the resistor R27 is connected to the capacitor C30, the other end of the capacitor C30 is grounded, the resistor R26 is connected to the 14 pin of the chip U5, the other end of the resistor R26 is connected to the capacitor C25, the other end of the capacitor C25 is grounded, the 11 and 14 pins of the chip U5 are driving output pins, the resistor R21 is connected to the 15 pin of the chip U5, the other end of the resistor R21 is grounded through the parallelly connected capacitor C21 and capacitor C24, the 1 pin of the chip U1 is grounded through the parallelly connected resistor R22 and capacitor C20, the 18 pin of the single-chip microcomputer chip U1 is connected to the base of the triode N1 through the resistor R39, the 17 pin of the chip U1 is connected to the gate of the triode N2, the 25, 26 and 27 pins of the chip U1 are respectively grounded through the toggle switches CON3, CON2 and CON1, the 7 pin of the chip U1 is grounded through the capacitor C31, and the 8 pin of the chip U1 is grounded through the capacitor C32.

[0006] As a further technical scheme of the present application: the chip U1 is a single-chip microcomputer, specifically an STC15 series single-chip microcomputer.

[0007] As a further technical scheme of the present application: the model of the chip U5 is UC3846.

[0008] As a further technical scheme of the present application: the transistor N1 is a PNP type transistor.

[0009] As a further technical scheme of the present application: the MOS transistor N2 is a P-MOS transistor.

[0010] As a further technical scheme of the present application: the single-chip microcomputer U1 is also connected to the 70-100KHz frequency modulation controller input end CN4.

[0011] As a further technical scheme of the present application: the capacitor C21 is an electrolytic capacitor.

[0012] The one or more technical schemes provided in the embodiments of the present application have at least the following technical effects or advantages:

[0013] The present application can realize 70-100KHz PWM signal conversion, electric welding machine power regulation, and meet the needs of different users for power regulation of silicon carbide electric welding machines. BRIEF DESCRIPTION OF DRAWINGS

[0014] Figure 1 It is an implementation circuit diagram of the driving frequency of the prior art UC3846;

[0015] Figure 2 It is a schematic diagram of the synchronization of UC3846 to the main UC3846 through the SYNC pin;

[0016] Figure 3 It is a circuit diagram of different driving frequencies of UC3846.

[0017] Figure 4 It is a circuit principle diagram of the present application. DETAILED DESCRIPTION

[0018] The technical schemes in the embodiments of the present application will be described clearly and completely below. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0019] Embodiment 1, as Figure 4As shown, a silicon carbide drive and power regulation circuit, mainly through the single-chip microcomputer U1, resistance R44, resistance R43, resistance R15, resistance R36, resistance R39, resistance R37, capacitor C26, capacitor C27, triode N1, MOS tube N2 and toggle switch CON3+CON2+CON1 are composed of, CN4 is 70-100KHz frequency controller input end, 3846-SYNC is 60-100KHz frequency controller output drive pulse, 5V, 15V is DC voltage source.

[0020] The specific connection relationship is as follows: resistance R23 and capacitor C23 are connected to 5V, resistance R21 is connected to 15V, resistance R44, resistance R45 and resistance R36 are connected to the collector of triode N1, resistance R15 is connected to the emitter of triode N1, the other end of resistance R39 and resistance R36 is connected to the base of triode N1, the two ends of resistance R37 are respectively connected to the drain and gate of triode N2, the source of triode N2 is connected to the 10 pin of chip U5, resistance R27 is connected to the 11 pin of chip U5, the other end of resistance R27 is connected to capacitor C30, the other end of capacitor C30 is grounded, resistance R26 is connected to the 14 pin of chip U5, the other end of resistance R26 is connected to capacitor C25, the other end of capacitor C25 is grounded, the 11 and 14 pins of chip U5 are drive output pins, resistance R21 is connected to the 15 pin of chip U5, the other end of resistance R21 is grounded through the parallel connection of capacitor C21 and capacitor C24, the 1 pin of chip U5 is grounded through the parallel connection of resistance R22 and capacitor C20, the 18 pin of single-chip microcomputer chip U1 is connected to the base of triode N1 through resistance R39, the 17 pin of chip U1 is connected to the gate of triode N2, the 25, 26 and 27 pins of chip U1 are respectively grounded through toggle switches CON3, CON2 and CON1, the 7 pin of chip U1 is grounded through capacitor C31, the 8 pin of chip U1 is grounded through capacitor C32.

[0021] The working principle is as follows:

[0022] CON1, CON2, CON3 are toggle switches, a total of 3 positions, 1 position: CON1 pin is connected to the ground; 2 position: CON2 pin is connected to the ground; 3 position: CON3 pin is connected to the ground, and so on. This paper takes 1 position, 2 position and 3 position as an example. As can be seen from the circuit diagram of CON1, the 27th pin of U1 is grounded, and when the 27th pin is 0, the 17th pin outputs a high level, which pulls down the 9th pin of UC3846, and the RC oscillation circuit composed of the 8th and 9th pins of UC3846 is disabled, and the 18th pin outputs a 80KHz driving PWM pulse, and the 11th and 14th pins of UC3846 output two complementary silicon carbide driving PWMs of 80KHz; Similarly, when CON2 is grounded, the single-chip microcomputer outputs a 90KHz PWM pulse, and when CON3 is grounded, the single-chip microcomputer outputs a 100KHz PWM pulse; When the external parameters change, the single-chip microcomputer will also change the PWM pulse frequency, achieving the function of 80-100KHz PWM signal conversion. When the single-chip microcomputer fails or the program runs away, N1 carrier frequency, UC3846 outputs a basic 68KHz PWM according to the RC circuit on the 8th and 9th pins, ensuring the basic operation of the circuit. The above is the principle of power regulation function. The single-chip microcomputer in this paper is an 8-bit single-chip microcomputer, which is used for control.

[0023] The principle of the 70-100KHz dimming signal conversion circuit and the power regulation circuit is described in detail above. This circuit can realize 70-100KHz PWM signal conversion and welding machine power regulation, meeting the needs of different users for silicon carbide welding machine power regulation.

[0024] For those skilled in the art, it is obvious that the present application is not limited to the details of the above exemplary embodiments, and can be implemented in other specific forms without departing from the spirit or essential characteristics of the present application. Therefore, from any point of view, the embodiments should be regarded as exemplary and non-limiting, and the scope of the present application is defined by the appended claims rather than the above description, and therefore all changes falling within the meaning and scope of the equivalent elements of the claims are intended to be included in the present application.

[0025] In addition, it should be understood that although the present specification is described in terms of embodiments, not every embodiment contains only one independent technical solution, and the description manner of the specification is only for the sake of clarity, and those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment have been properly combined to form other embodiments easily understood by those skilled in the art.

Claims

1. A silicon carbide drive and power regulation circuit, comprising a chip U1, resistors R23, R44, R43, R15, R36, R39, R37, capacitors C26, C27, transistors N1, N2, and toggle switches CON3, CON2, and CON1, characterized in that: The resistor R23 and capacitor C23 are connected to 5V, the resistor R21 is connected to 15V, the resistor R44, the resistor R43 and the resistor R36 are connected to the collector of the transistor N1, the resistor R15 is connected to the emitter of the transistor N1, the other ends of the resistor R39 and the resistor R36 are connected to the base of the transistor N1, the two ends of the resistor R37 are respectively connected to the drain and gate of the transistor N2, the source of the transistor N2 is connected to pin 10 of the chip U5, the resistor R27 is connected to pin 11 of the chip U5, the other end of the resistor R27 is connected to the capacitor C30, the other end of the capacitor C30 is grounded, the resistor R26 is connected to pin 14 of the chip U5, the other end of the resistor R26 is connected to the capacitor C25, the other end of the capacitor C25 Grounded, pins 11 and 14 of chip U5 are drive output pins, resistor R21 is connected to pin 15 of chip U5, and the other end of resistor R21 is grounded through capacitor C21 and capacitor C24 connected in parallel, pin 1 of chip U5 is grounded through resistor R22 and capacitor C20 connected in parallel, pin 18 of chip U1 is connected to the base of transistor N1 through resistor R39, pin 17 of chip U1 is connected to the gate of transistor N2, pins 25, 26, and 27 of chip U1 are grounded through toggle switches CON3, CON2, and CON1 respectively, pin 7 of chip U1 is grounded through capacitor C31, pin 8 of chip U1 is grounded through capacitor C32, and pin 8 of chip U5 is grounded through capacitors C26 and C27 connected in parallel.

2. A silicon carbide driving and power regulation circuit according to claim 1, characterized in that: The chip U1 is a STC15 series single chip microcomputer.

3. The silicon carbide driving and power regulation circuit according to claim 1, characterized in that: The model of the chip U5 is UC3846.

4. The silicon carbide driving and power regulation circuit according to claim 1, characterized in that: The transistor N1 is a PNP transistor.

5. The silicon carbide driving and power regulating circuit according to claim 1, characterized in that: The chip U1 is also connected to the 70-100KHz frequency modulation controller input terminal CN4.

6. The silicon carbide driving and power regulating circuit according to claim 5, characterized in that: The capacitor C21 is an electrolytic capacitor.

Citation Information

Patent Citations

  • SiC-based double-wire composite ultra-high frequency pulsed MIG welding power supply system and control method

    CN111975173A

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