Display device

Abstract

A display device includes: a first active area in which a plurality of first pixels are disposed and having a first resolution; a second active area in which a plurality of second pixels are disposed and having a second resolution lower than the first resolution; and a plurality of light emitting elements, in which each of the plurality of light emitting elements includes an electron blocking layer and a hole blocking layer, wherein the number of moles of dopant in at least one of the electron blocking layer or the hole blocking layer in the second active region is greater than the number of moles of dopant in at least one of the electron blocking layer or the hole blocking layer in the first active region. Accordingly, a brightness difference between the first active region and the second active region may be reduced.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to Korean Patent Application No. 10-2023-0119693, filed on September 8, 2023, which is hereby incorporated by reference for all purposes as if fully set forth herein. Background Art Technical Field

[0003] Embodiments of the present disclosure relate to a display device.

[0004] Description of Related Technology

[0005] Electroluminescent display devices are classified into inorganic light emitting display devices and organic light emitting display devices according to the material of the light emitting layer.

[0006] An active matrix type organic light emitting display device includes a self-luminous organic light emitting diode and has various advantages such as a fast response speed, high light emitting efficiency, high brightness, and a wide viewing angle.

[0007] In an organic light emitting display device, an organic light emitting diode is formed in each pixel. The organic light emitting display device has a fast response speed, high light emission efficiency, high brightness, and a wide viewing angle, and also has excellent contrast and color gamut because it can express black grayscale in full black.

[0008] In modern society, the use of mobile terminals is indispensable, and multimedia functions that realize various functions required in daily life through mobile terminals are being improved day by day.

[0009] For example, smartphones have built-in cameras whose resolution is increasing to that of existing digital cameras.

[0010] However, the front-facing camera of a smartphone limits the size and design of the screen, making it difficult to design the screen wider and more freely.

[0011] Therefore, screen designs including notches or punch holes are adopted in smartphones to reduce the space occupied by cameras. However, in this case, the screen size is still limited due to the camera, so it is still difficult to achieve full-screen display.

[0012] As used herein, the term "full screen display" refers to a display device configured to display an image on most of the front surface of a mobile terminal. Summary of the invention

[0013] In order to achieve full screen display, a method has been proposed, namely, providing an area with low resolution pixels in the screen of the display panel, and arranging a camera and / or various sensors at a position below the display panel and facing the area with low resolution pixels.

[0014] However, due to the low-resolution pixels of the area where the low-resolution pixels are disposed, the light emitting area is reduced, and thus 1.5 times more current is required to maintain the same brightness.

[0015] As the amount of required current increases, a problem of shortened life arises, and therefore, over time, the brightness difference between an area where low-resolution pixels are provided and an area where high-resolution pixels are provided increases, and the boundary of the area where low-resolution pixels are provided can be clearly identified.

[0016] Therefore, the inventors of the present disclosure have developed a display device in which the brightness difference between an area where low-resolution pixels are provided and an area where high-resolution pixels are provided can be reduced even after long-term operation by increasing only the lifespan of the area where low-resolution pixels are provided.

[0017] Embodiments of the present disclosure may provide a display device in which a brightness difference between a region where low-resolution pixels are provided and a region where high-resolution pixels are provided may be reduced.

[0018] An embodiment of the present disclosure may provide a display device, comprising: a first active area, in which a plurality of first pixels are arranged, and the plurality of first pixels have a first resolution; a second active area, in which a plurality of second pixels are arranged, and the plurality of second pixels have a second resolution lower than the first resolution; and a plurality of light-emitting elements arranged in each of the plurality of first pixels and the plurality of second pixels, wherein each of the plurality of light-emitting elements comprises: a first electrode layer; an electron blocking layer on the first electrode layer; a light-emitting layer on the electron blocking layer; a hole blocking layer on the light-emitting layer; and a second electrode layer on the hole blocking layer; wherein at least one of the electron blocking layer or the hole blocking layer comprises a dopant, and the number of moles of the dopant in at least one of the electron blocking layer or the hole blocking layer located in the second active area is greater than the number of moles of the dopant in at least one of the electron blocking layer or the hole blocking layer located in the first active area.

[0019] An embodiment of the present disclosure may provide a display device, comprising: a first active area, in which a plurality of first pixels are arranged, and the plurality of first pixels have a first resolution; a second active area, in which a plurality of second pixels are arranged, and the plurality of second pixels have a second resolution lower than the first resolution; and a plurality of light-emitting elements arranged in each of the plurality of first pixels and the plurality of second pixels, wherein each of the plurality of light-emitting elements comprises: a first electrode layer; an electron blocking layer on the first electrode layer; a light-emitting layer on the electron blocking layer; and a second electrode layer on the light-emitting layer; wherein the electron blocking layer comprises a dopant, and the number of moles of the dopant in the electron blocking layer located in the second active area is greater than the number of moles of the dopant in the electron blocking layer located in the first active area.

[0020] An embodiment of the present disclosure may provide a display device, comprising: a first active area, in which a plurality of first pixels are arranged, and the plurality of first pixels have a first resolution; a second active area, in which a plurality of second pixels are arranged, and the plurality of second pixels have a second resolution lower than the first resolution; and a plurality of light-emitting elements arranged in each of the plurality of first pixels and the plurality of second pixels, wherein each of the plurality of light-emitting elements comprises: a first electrode layer; a light-emitting layer on the first electrode layer; a hole blocking layer on the light-emitting layer; and a second electrode layer on the hole blocking layer; wherein the hole blocking layer comprises a dopant, and the number of moles of the dopant in the hole blocking layer located in the second active area is greater than the number of moles of the dopant in the hole blocking layer located in the first active area.

[0021] An embodiment may provide a display device comprising: a substrate; a plurality of first pixels disposed in a first active region of the substrate, wherein the plurality of first pixels have a first resolution, wherein at least the first pixel comprises a light-emitting element, wherein the light-emitting element comprises a first electron blocking layer and a light-emitting layer on the first electron blocking layer; a plurality of second pixels disposed in a second active region of the substrate, wherein the plurality of second pixels have a second resolution lower than the first resolution, wherein at least the second pixel comprises a light-emitting element, wherein the light-emitting element comprises a second electron blocking layer and a light-emitting layer on the second electron blocking layer; and wherein at least the second electron blocking layer comprises a dopant, and an amount of the dopant in the second electron blocking layer located in the second active region is greater than an amount of the dopant in the first electron blocking layer located in the first active region.

[0022] An embodiment may provide a display device comprising: a substrate; a plurality of first pixels disposed in a first active area of ​​the substrate, wherein the plurality of first pixels have a first resolution, wherein at least the first pixel comprises a light-emitting element, wherein the light-emitting element comprises a light-emitting layer and a first hole blocking layer on the light-emitting layer; a plurality of second pixels disposed in a second active area of ​​the substrate, wherein the plurality of second pixels have a second resolution lower than the first resolution, wherein at least the second pixel comprises a light-emitting element, wherein the light-emitting element comprises a light-emitting layer and a second hole blocking layer on the light-emitting layer; and wherein at least the second hole blocking layer comprises a dopant, and an amount of the dopant in the second hole blocking layer located in the second active area is greater than an amount of the dopant in the first hole blocking layer located in the first active area.

[0023] According to an embodiment of the present disclosure, a display device can be provided in which a luminance difference between a region where low-resolution pixels are provided and a region where high-resolution pixels are provided can be reduced.

[0024] Furthermore, according to an embodiment of the present disclosure, by using efficient low-resolution pixels, a display device having a long life span and low power consumption can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 is a schematic diagram of a display device according to one embodiment of the present disclosure.

[0026] Figure 2 is a cross-sectional view schematically showing a display device according to an embodiment of the present disclosure.

[0027] Figure 3 An arrangement of first pixels in a first active area of ​​a display device according to an embodiment of the present disclosure is shown.

[0028] Figure 4 An arrangement of second pixels in a second active area of ​​a display device according to an embodiment of the present disclosure is shown.

[0029] Figure 5 is a cross-sectional view of a light emitting element according to one embodiment of the present disclosure.

[0030] Fig. 6A is a cross-sectional view of a light emitting element including an N-type dopant in an electron blocking layer according to one embodiment of the present disclosure.

[0031] Figure 6B is a cross-sectional view of a light emitting element including a P-type dopant in a hole blocking layer according to another embodiment of the present disclosure.

[0032] Fig. 7AHOMO and LUMO energy levels of a light emitting element depending on the presence or absence of an N-type dopant in an electron blocking layer according to one embodiment of the present disclosure are shown.

[0033] Figure 7B HOMO and LUMO energy levels of a light emitting element depending on the presence or absence of a P-type dopant in a hole blocking layer according to another embodiment of the present disclosure are shown.

[0034] Figure 8 is a flowchart of a method for manufacturing a light emitting element according to one embodiment of the present disclosure.

[0035] Fig.9A is a flowchart of a method for manufacturing a light emitting element according to one embodiment of the present disclosure.

[0036] Fig. 9B is a flowchart of a method for manufacturing a light emitting element according to another embodiment of the present disclosure.

[0037] Fig.10 The shape of a mask that can be applied to the embodiments of the present disclosure is schematically shown. DETAILED DESCRIPTION

[0038] In the following description of the embodiments or implementations of the present disclosure, reference will be made to the accompanying drawings, in which specific embodiments or implementations that can be implemented are shown by way of illustration, and even when the same reference numerals and symbols are shown in drawings that are different from each other, they can be used to represent the same or similar components. In addition, in the following description of the embodiments or implementations of the present disclosure, when it is determined that the description may make the subject matter in some embodiments of the present disclosure quite unclear, the detailed description of the well-known functions and components contained herein will be omitted. Terms such as "including", "having", "including", "consisting of", "consisting of" and "formed of" used herein are generally intended to allow the addition of other components, unless these terms are used together with the term "only". As used herein, unless the context clearly indicates otherwise, the singular form is intended to include the plural form.

[0039] Terms such as "first", "second", "A", "B", "(A)" or "(B)" may be used herein to describe elements of the present disclosure. Each of these terms is not used to define the nature, order, sequence, or quantity of an element, etc., but is only used to distinguish the corresponding element from other elements.

[0040] When it is mentioned that a first element is “connected or coupled to”, “contacts or overlaps”, etc. a second element, it should be interpreted that not only the first element may be “directly connected or coupled to” or “directly contact or overlaps” the second element, but also a third element may be “inserted” between the first and second elements, or the first and second elements may be “connected or coupled to”, “contacts or overlaps”, etc. each other via a fourth element. Here, the second element may be included in at least one of two or more elements that are “connected or coupled to”, “contacts or overlaps”, etc. each other.

[0041] When time-related terms such as "after", "subsequently", "next", "before", etc. are used to describe a process or operation of an element or configuration, or a flow or step in an operation, process, or manufacturing method, these terms may be used to describe non-continuous or non-sequential processes or operations unless the terms "directly" or "immediately" are used at the same time.

[0042] Furthermore, when referring to any dimension, relative size, etc., even if no relevant description is specified, it should be considered that the numerical value or corresponding information (e.g., level, range, etc.) of the element or feature includes a tolerance or error range that may be caused by various factors (e.g., processing factors, internal or external influences, noise, etc.). In addition, the term "may" completely encompasses all meanings of the term "can".

[0043] Hereinafter, various embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0044] Figure 1 is a schematic diagram of a display device 100 according to one embodiment of the present disclosure.

[0045] Reference Figure 1 , the display device 100 may include a display panel 110 and a housing.

[0046] The front of the display panel 100 may consist of a display area.

[0047] Therefore, full-screen display becomes possible.

[0048] The display area may include a first active area AA1 and a second active area AA2 .

[0049] Both the first active area AA1 and the second active area AA2 may output images, but they may have different resolutions.

[0050] For example, the resolution of the plurality of second pixels PG2 disposed in the second active area AA2 may be lower than the resolution of the plurality of first pixels PG1 disposed in the first active area AA1. The plurality of first pixels PG1 may include at least a first pixel. The plurality of second pixels PG2 may include at least a second pixel.

[0051] As the resolution of the plurality of second pixels PG2 disposed in the second active area AA2 decreases, a sufficient amount of light may be injected into the sensors 41 and 42 disposed in the second active area AA2 .

[0052] However, the present disclosure is not necessarily limited thereto, and the resolution of the first active area AA1 and the resolution of the second active area AA2 may be the same as long as the second active area AA2 has sufficient light transmittance or an appropriate noise compensation algorithm can be implemented.

[0053] An example in which the resolution of the second active area AA2 of the display panel 110 is lower than that of the first active area AA1 according to one embodiment of the present disclosure will now be described.

[0054] The second active area AA2 included in the display panel 110 according to one embodiment of the present disclosure may be a region in which the sensors 41 and 42 are disposed.

[0055] The second active area AA2 is a region overlapped with various sensors and may have a smaller area than the first active area AA1 outputting most of an image.

[0056] The sensors 41 and 42 may include at least one of an image sensor, a proximity sensor, an illumination sensor, a gesture sensor, a motion sensor, a fingerprint recognition sensor, and a biometric sensor.

[0057] For example, the first sensor 41 may be an illumination sensor, and the second sensor 42 may be an image sensor for capturing an image or a video, but is not limited thereto.

[0058] Figure 2 is a cross-sectional view schematically showing a display device according to an embodiment of the present disclosure.

[0059] Reference Figure 2 , the first active area AA1 and the second active area AA2 may include a pixel array in which pixels emitting light according to pixel data are disposed.

[0060] The plurality of first pixels PG1 and the plurality of second pixels PG2 may each represent a pixel array.

[0061] In addition, resolution refers to the number of pixels per unit area (pixels per inch, PPI or ppi), and the number of pixels per unit area of ​​the second active area AA2 may be smaller than that of the first active area AA1 to ensure the transmittance of the second active area AA2.

[0062] The pixel array of the first active area AA1 may include a pixel area in which a plurality of pixels having a high number of pixels per unit area are disposed.

[0063] The number of pixels per unit area of ​​the first active area AA1 may be 400 ppi or more, but is not limited thereto.

[0064] The pixel array of the second active area AA2 may include a pixel area in which a plurality of pixel groups having a relatively low number of pixels per unit area are disposed while being spaced apart from each other by the light-transmitting area AG.

[0065] The number of pixels per unit area of ​​the second active area AA2 may be 200 ppi or less, but is not limited thereto.

[0066] In the second active area AA2 , external light may pass through the display panel 110 through the light-transmitting area AG having high light transmittance and be received by the sensor under the display panel 110 .

[0067] Since both the first active area AA1 and the second active area AA2 include pixels, an input image may be displayed in both the first active area AA1 and the second active area AA2 .

[0068] Each pixel in the first active area AA1 and the second active area AA2 may include sub-pixels having different colors to display the color of an image.

[0069] The sub-pixels may include a red sub-pixel R, a green sub-pixel G, and a blue sub-pixel B.

[0070] Although each pixel may further include a white sub-pixel, the present invention will be described by an embodiment in which each pixel includes a red sub-pixel R, a green sub-pixel G, and a blue sub-pixel B. Figure 2 The display device shown.

[0071] Furthermore, each sub-pixel may include a pixel circuit and a light emitting element.

[0072] The second active area AA2 may include pixels and sensors disposed under the screen of the display panel 110 .

[0073] Although the second active area AA2 may include various types of sensors as described above, a sensor provided in the display device 100 according to one embodiment of the present disclosure will be described by taking a camera module as an example.

[0074] The second pixel PG2 disposed in the second active area AA2 may display an image by writing pixel data of an input image in a display mode.

[0075] The camera module can capture external images in an image capture mode and output picture or video image data.

[0076] The lens of the camera module may face the second active area AA2.

[0077] External light is incident on the lens 30 of the camera module through the second active area AA2 , and the lens 30 may focus the light on the image sensor.

[0078] The camera module can capture external images in an image capture mode and output picture or video image data.

[0079] Since the second active area AA2 has a relatively low number of pixels per unit area of ​​the pixel array, thereby ensuring light transmittance, an image quality compensation algorithm may be applied to compensate for the brightness and color coordinates of the pixels in the second active area AA2.

[0080] Therefore, full-screen display can be achieved without the display area of ​​the screen being limited by the camera module.

[0081] The display panel 110 has a width along the X-axis direction, a length along the Y-axis direction, and a thickness along the Z-axis direction.

[0082] The display panel 110 may include a circuit layer 12 disposed on a substrate 10 and a light emitting element layer 14 disposed on the circuit layer 12 .

[0083] The encapsulation layer 18 may be disposed on the light emitting element layer 14 , and the cover glass 20 may be disposed on the encapsulation layer 18 .

[0084] In some cases, to improve outdoor visibility of display device 100 , a polarizing plate may be disposed between encapsulation layer 18 and cover glass 20 .

[0085] The circuit layer 12 may include a pixel circuit connected to lines such as a data line, a gate line, and a power line, a gate driver connected to the gate line, and the like.

[0086] The circuit layer 12 may include circuit elements such as transistors composed of thin film transistors (TFTs), capacitors, and wires.

[0087] The lines and circuit elements of the circuit layer 12 may include a plurality of dielectric layers, two or more metal layers isolated from each other by dielectric layers interposed therebetween, and an active layer including a semiconductor material.

[0088] The light emitting element layer 14 may include a light emitting element 140 driven by a pixel circuit.

[0089] The light emitting element layer 14 may be covered by an encapsulation layer 18 .

[0090] The encapsulation layer 18 may have a structure in which organic films and inorganic films are alternately stacked.

[0091] The inorganic film can block the penetration of water or oxygen, and the organic film can flatten the surface of the inorganic film.

[0092] When the organic film and the inorganic film are stacked in multiple layers, the movement path of water or oxygen becomes longer than that in a single layer, thereby effectively blocking the penetration of water and oxygen that affects the light emitting element layer 14 .

[0093] Figure 3 An arrangement of first pixels PG1 in a first active area AA1 of a display device 100 according to an embodiment of the present disclosure is shown.

[0094] Reference Figure 3 , the first active area AA1 may include first pixels PG1 arranged in a matrix form.

[0095] Each of the plurality of first pixels PG1 may consist of a single unit pixel including a red sub-pixel R, a green sub-pixel G, and a blue sub-pixel B. As shown in FIG.

[0096] Each of the plurality of first pixels PG1 may further include a white sub-pixel.

[0097] Additionally, a sub-pixel rendering algorithm may be used to configure two sub-pixels into one pixel.

[0098] As an example, the first pixel PG1 may include a red sub-pixel R and a green sub-pixel G.

[0099] As another example, the first pixel PG1 may be configured to include a blue sub-pixel B and a green sub-pixel G. As shown in FIG.

[0100] The insufficient color representation in each first pixel PG1 may be compensated by an average value of corresponding color data of neighboring pixels through a sub-pixel rendering algorithm.

[0101] although Figure 3 An arrangement of sub-pixels in which red sub-pixels R, green sub-pixels G, blue sub-pixels B, and green sub-pixels G are arranged in a zigzag shape along the X-axis direction is shown, but the arrangement of sub-pixels is not limited thereto.

[0102] Figure 4 An arrangement of second pixels PG2 in the second active area AA2 of the display device 100 according to one embodiment of the present disclosure is shown.

[0103] Reference Figure 4 , a plurality of light-transmitting areas (AG) may exist in the second active area AA2. Each of the plurality of light-transmitting areas AG may be disposed between the plurality of second pixels PG2.

[0104] The light-transmitting area AG may include a metal-free transparent medium having high light transmittance, thereby allowing light to be incident while reducing or minimizing light loss.

[0105] The light-transmitting area AG may be composed of a transparent dielectric material including no metal lines or pixels.

[0106] Although the shape of the light-transmitting area AG is shown as a circle, the shape is not limited thereto.

[0107] For example, the light-transmitting area AG may be designed in various shapes such as a circle, an ellipse, or a polygon.

[0108] Except for the details of the dopant which will be described later, the details about the second pixel PG2 may be the same as those about the above. Figure 3 The details described about the first pixel PG1 are substantially the same.

[0109] Figure 5 is a cross-sectional view of a light emitting element 140 according to one embodiment of the present disclosure.

[0110] Reference Figure 5 , the light emitting element 140 according to one embodiment includes a red sub-pixel R, a green sub-pixel G, and a blue sub-pixel B emitting different colors on a substrate 10 .

[0111] The light emitting element 140 may include a first electrode layer 141 disposed on the substrate 10 , a second electrode layer 148 disposed to face the first electrode layer 142 , and a light emitting layer 145 formed between the first electrode layer 141 and the second electrode layer 148 .

[0112] The first electrode layer 141 may be an anode, and the second electrode layer 148 may be a cathode, but embodiments of the present disclosure are not limited thereto.

[0113] For example, in the case of an inverted type, the first electrode layer 141 may be a cathode, and the second electrode layer 148 may be an anode.

[0114] However, in an embodiment described later, the description will focus on a configuration in which the first electrode layer 141 of the light emitting element 140 is an anode and the second electrode layer 148 is a cathode.

[0115] The first electrode layer 141 may be electrically connected to any one of a source and a drain in a transistor including a source, a drain, a gate, and an active layer via a contact hole formed in a dielectric layer.

[0116] The first electrode layer 141 may be composed of a material having a relatively high work function.

[0117] The first electrode layer 141 may be composed of, for example, a transparent conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), aluminum-doped zinc oxide (AZO), indium oxide (In2O3), or tin oxide (SnO2), but is not limited thereto.

[0118] The second electrode layer 148 may be composed of a metal having a relatively low work function, an alloy, a conductive compound, or a mixture of two or more thereof.

[0119] As an example, the transmissive electrode can be obtained by forming a thin film of lithium (Li), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), etc.

[0120] Meanwhile, various modifications may be made to the embodiments of the present disclosure, such as using ITO or IZO to form a transmissive electrode to obtain a top emitting device.

[0121] A capping layer (not shown) may be disposed on the second electrode layer 148 to improve optical properties and maximize light emitting efficiency.

[0122] For example, the capping layer may be composed of a metal oxide layer, a metal nitride layer, or a metal oxynitride layer.

[0123] As an example, the capping layer may be composed of MoO x (x=2 to 4), Al2O3, Sb2O3, BaO, CdO, CaO, Ce2O3, CoO, Cu2O, DyO, GdO, HfO2, La2O3, Li2O, MgO, NbO, NiO, Nd2O3, PdO, Sm2O3, ScO, SiO2, SrO, Ta2O3, TiO, WO3, VO2, YbO, Y2O3, ZnO, ZrO, AlN, BN, NbN, SiN, TaN, TiN, VN, YbN, ZrN, SiON, AlON, or a mixture of two or more thereof, but not limited to,

[0124] The light emitting layer 145 may include a red organic light emitting layer 145R disposed in the red sub-pixel R, a green organic light emitting layer 145G disposed in the green sub-pixel G, and a blue organic light emitting layer 145B disposed in the blue sub-pixel B.

[0125] In this case, the size of the wavelength of the emitted light becomes larger in the order of the red organic light emitting layer 145R, the green organic light emitting layer 145G, and the blue organic light emitting layer 145B.

[0126] The red organic light emitting layer 145R may include a red host and a red dopant.

[0127] As a red matrix, Alq3, CBP, PVK, AND, TCTA, TPBI, TBADN, E3, DSA, or a mixture of two or more thereof may be used, but is not limited thereto.

[0128] As a red dopant, a compound including PtOEP, Ir(piq)3, Btp2Ir(acac), Ir(2-phq)2(acac), Ir(2-phq)3, Ir(flq)2(acac), Ir(fliq)2(acac), DCM or DCJTB may be used, but is not limited thereto.

[0129] The green organic light emitting layer 145G may include a green host and a green dopant.

[0130] The green matrix used may be Alq3, CBP, PVK, AND, TCTA, TPBI, TBADN, E3, DSA, or a mixture of two or more thereof, but is not limited thereto.

[0131] The green dopant used can be tris(2-phenylpyridine)iridium (Ir(ppy)3, tris(2-phenylpyridine)iridium), bis(2-phenylpyridine)(acetyl acetonate)iridium(III) acetonato)iridium(III),Ir(ppy)2(acac)), tris(2-(4-tolyl)phenylpiridine)iridium (Ir(mppy)3), 10-(2-benzothiazolyl)-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H,11H-[1]benzopyrano[6,7,8-ij]-quinolizin11-one (C545T), or the like, but are not limited thereto.

[0132] The blue organic light emitting layer 145B may include a blue host and a blue dopant.

[0133] The blue matrix used can be Alq3, 4,4'-N,N'-dicarbazole-biphenyl (CBP, 4,4'-N,N'-dicabazole-biphenyl), poly(N-vinyl carbazole) (PVK, poly(n-vinyl carbazole)), 9,10-di(naphthalene-2-yl)anthracene (AND, 9,10-di(naphthalene-2-yl)anthracene), TCTA, 1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBI, 1,3,5-tris(N-phenyl benzimidazole-2-yl)benzene), 3-tert-butyl-9,10-di-(naphth-2-yl)anthracene (TBADN, 3-tert-butyl-9,10-di(naphth-2-yl)anthracene), E3, distyrylarylene (DSA, distyrylarylene), or a mixture of two or more thereof, but is not limited thereto.

[0134] The blue dopant used may be a compound including F2Irpic, (F2ppy)2Ir(tmd), Ir(dfppz)3, tert-fluorene, 4,4'-bis(4-diphenylaminostyryl)biphenyl (DPAVBi, 4,4'-bis(4-diphenylaminostyryl)biphenyl), TBPe, etc., but is not limited thereto.

[0135] The light emitting element 140 may include a hole transport layer 143 disposed between the first electrode layer 141 and the light emitting layer 145 .

[0136] The hole transport layer 143 may include a common hole transport layer 143C disposed on the hole injection layer 142 .

[0137] The hole transport layer 143 may include a light emitting auxiliary layer disposed between the hole transport layer 143 and the common hole transport layer 143C.

[0138] The light emitting auxiliary layer may include a red light emitting auxiliary layer 143R, a green light emitting auxiliary layer 143G, and a blue light emitting auxiliary layer (not shown) disposed on the hole transport layer 143C.

[0139] For example, the light-emitting auxiliary layer can be used to transport holes and can be composed of a hole transport material. The light-emitting auxiliary layer can be composed of the same material or compound, or can be composed of different materials or compounds.

[0140] As an example, the hole transport layer 143 , the common hole transport layer 143C, the red light emitting auxiliary layer 143R, the green light emitting auxiliary layer 143G, and the blue light emitting auxiliary layer (not shown) may include a material containing a tertiary amine or a fluorine-containing tertiary amine, but is not limited thereto.

[0141] The light emitting element 140 may include a hole injection layer 142 disposed on the first electrode layer 141 , a hole transport layer 143 disposed on the hole injection layer 142 , a light emitting layer 145 disposed on the hole transport layer 143 , and an electron transport layer 147 disposed on the light emitting layer 145 , but is not limited thereto.

[0142] When a voltage is applied to the first electrode layer 141 and the second electrode layer 148 of the light emitting element 140 , holes passing through the hole transport layer 143 and electrons passing through the electron transport layer 147 may move to the light emitting layer 145 to form excitons, and visible light may be emitted from the light emitting layer 145 .

[0143] The light emitting element 140 may include an electron blocking layer 144 between the hole transport layer 143 and the light emitting layer 145 .

[0144] However, the present disclosure is not necessarily limited thereto, and the light emitting element 140 may not include the electron blocking layer 144 .

[0145] The electron blocking layer 144 may include tris(phenylpyrazole)iridium, 9,9-bis[4-(N,N-bis-biphenyl-4-ylamino)phenyl]-9H-fluorene (BPAPF, 9,9-bis[4-(N,N-bis-biphenyl-4-ylamino)phenyl]-9H-fluorene), bis[4-(p,p-ditolylamino)phenyl]diphenylsilane, 4,4'-bis[N-(1-naphthyl)-N- At least one of [4,4'-bis[N-(1-napthyl)-N-phenyl-amino]biphenyl (NPD), N,N'-dicarbazolyl-3,5-benzene (mCP), and bis[4-(N,N-diethylamino)-2-methylphenyl](4-methylphenyl)methane (MPMP), or a combination of two or more thereof, but is not limited thereto.

[0146] In addition, the electron blocking layer 144 may include an inorganic compound. As an example, the electron blocking layer 144 may include at least one of the following: a halide such as LiF, NaF, KF, RbF, CsF, FrF, MgF2, CaF2, SrF2, BaF2, LiCl, NaCl, KCl, RbCl, CsCl, and FrCl; and an oxide such as Li2O, Li2O2, Na2O, K2O, Rb2O, Rb2O2, Cs2O, Cs2O2, LiAlO2, LiBO2, LiTaO3, LiNbO3, LiWO4, Li2CO, NaWO4, KAlO2, K2SiO3, B2O5, Al2O3, and SiO2; or a combination of two or more thereof, but is not limited thereto.

[0147] The electron blocking layer 144 may function as a buffer layer that blocks direct contact between the hole transport layer 143 and the light emitting layer 145 , and may function to prevent electrons from easily flowing into the hole transport layer 143 .

[0148] In other words, the electron blocking layer 144 can improve the efficiency and life of the light emitting element 140 by controlling electron injection, movement, and combination with holes.

[0149] The electron transport layer 147 may be disposed on the light emitting layer 145 .

[0150] The electron transport layer 147 may control the moving speed of electrons so that the electrons and holes may meet in the light emitting layer 145 and emit light.

[0151] The electron transport layer 147 may include a material through which electrons move at a speed several times higher than that through other materials.

[0152] For example, the electron transport layer 147 may include at least one of tris(8-hydroxyquinolino)aluminum (Alq3), PBD, TAZ, spiro-PBD, BAlq, and SAlq, or a combination of two or more thereof, but is not limited thereto.

[0153] An electron injection layer (not shown) may be disposed on the electron transport layer 147 .

[0154] The electron injection layer (not shown) may serve to transfer electrons introduced from the second electrode layer 148 to the electron transport layer 147 .

[0155] The light emitting element 140 may include a hole blocking layer 146 between the light emitting layer 145 and the electron transport layer 147 .

[0156] However, the present disclosure is not necessarily limited thereto, and the light emitting element 140 may not include the hole blocking layer 146 .

[0157] The hole blocking layer 146 may function as a buffer layer that blocks direct contact between the electron transport layer 147 and the light emitting layer 145 , and may function to prevent holes from easily flowing into the electron transport layer 147 .

[0158] The hole blocking layer 146 can improve the efficiency and lifespan of the light emitting element 140 by controlling hole injection, movement, and combination with electrons.

[0159] Fig. 6A is a cross-sectional view of a light emitting element including an N-type dopant in an electron blocking layer according to one embodiment of the present disclosure.

[0160] Reference Fig. 6A, the light emitting element 140 may include an electron blocking layer 144d including an N-type dopant. In one embodiment, the light emitting element 140 is included in a first pixel of a plurality of first pixels in the first active area AA1, and includes a first electron blocking layer and a light emitting layer on the first electron blocking layer. In one embodiment, the light emitting element 140 is included in a second pixel of a plurality of second pixels in the second active area AA2, and includes a second electron blocking layer and a light emitting layer on the second electron blocking layer.

[0161] In one embodiment, the amount of N-type dopant in at least the second electron blocking layer is greater than the amount of N-type dopant in at least the first electron blocking layer. In one embodiment, the amount is the number of moles of dopant, and the number of moles of N-type dopant in at least one electron blocking layer 144d located in the second active region may be greater than the number of moles of N-type dopant in at least one electron blocking layer 144d located in the first active region. However, it should be understood that in other embodiments, the amount may refer to the weight of the dopant in the electron blocking layer, the volume of the dopant, etc.

[0162] The N-type dopant in the electron blocking layer 144d may be at least one of the following compounds, but is not limited thereto:

[0163]

[0164] In one embodiment, the light-emitting element 140 of the first pixel or the second pixel includes a first electrode layer 141, a common hole transport layer 143C on the first electrode layer 141, a red light-emitting auxiliary layer 143R on a first portion of the common hole transport layer 143C, a green light-emitting auxiliary layer 143G on a second portion of the common hole transport layer 143C, and a second electron blocking layer 144d on the red light-emitting auxiliary layer 143R, the green light-emitting auxiliary layer 143G, and a third portion of the common hole transport layer 143C.

[0165] As the number of moles of the N-type dopant in the electron blocking layer 144 d increases, the LUMO energy level of the electron blocking layer 144 d may decrease.

[0166] In addition, as the number of moles of the N-type dopant in the electron blocking layer 144 d increases, the recombination zone where holes and electrons combine increases, thereby reducing exciton quenching, thereby increasing the lifetime.

[0167] When the molar number of the N-type dopant in the electron blocking layer 144 d is low, the recombination zone is biased toward the electron blocking layer 144 d .

[0168] On the other hand, when the molar number of the N-type dopant in the electron blocking layer 144d is high, the LUMO energy level of the electron blocking layer 144d decreases, so the recombination zone moves toward the hole blocking layer 146 and toward the center of the light-emitting layer 145, and the hole mobility increases, thereby increasing the lifetime.

[0169] Therefore, when the molar number of the N-type dopant in the at least one electron blocking layer 144d in the second active area is greater than that in the first active area, the lifetime of the light emitting element 140 in the second active area AA2 increases.

[0170] Furthermore, when a P-type dopant is applied to the hole transport layer 143 , gas may be released by external heat when the light emitting element 140 is driven for a long time, and the released gas may react with the P-type dopant in the hole transport layer 143 , causing material denaturation.

[0171] The material degeneration may affect the HOMO level of the hole transport layer 143 , resulting in degradation of the light emitting element 140 .

[0172] When the N-type dopant is applied to the electron blocking layer 144 d instead of the hole transport layer 143 , thermal degradation of the light emitting element 140 may be prevented.

[0173] Furthermore, when the molar number of the N-type dopant in the at least one electron blocking layer 144d in the second active region is greater than that in the at least one electron blocking layer 144d in the first active region, the brightness difference between the second active region AA2 and the first active region AA1 decreases.

[0174] Under the same current, the lifetime of the light emitting element 140 in the second active area AA2 may be increased by at least 1.5 times the lifetime of the light emitting element 140 in the first active area AA1.

[0175] If the life span of the light emitting element 140 located in the second active area AA2 increases, the brightness difference between the second active area AA2 and the first active area AA1 may be reduced even when driven for a long time.

[0176] As another example, only the electron blocking layer 144 d located in the second active region may include the N-type doping, and the electron blocking layer 144 located in the first active region may not include the N-type doping.

[0177] When the electron blocking layer 144d located only in the second active area includes the N-type dopant, the brightness difference between the second active area AA2 and the first active area AA1 may become smaller.

[0178] As another example, the number of moles of the N-type dopant in at least one electron blocking layer 144d located in the second active region may be greater than the number of moles of the N-type dopant in at least one electron blocking layer 144d located in the first active region, and the number of moles of the N-type dopant in at least one electron blocking layer 144d located in the second active region may be equal to or greater than the number of moles of the electron blocking layer 144d located in the second active region.

[0179] If the molar number of the dopant in at least one electron blocking layer 144d located in the second active region is greater than the molar number of the electron blocking layer 144d located in the second active region, the energy gap between the LUMO of the light-emitting layer 145 and the LUMO of the electron blocking layer 144d becomes 0.7 eV or less, making it easier for electrons to flow into the hole transport layer 143.

[0180] In other words, if the energy gap between the LUMO of the light emitting layer 145 and the LUMO of the electron blocking layer 144 d becomes 0.7 eV or less, the function of the electron blocking layer 144 d may be reduced.

[0181] In this specification, the number of moles of the electron blocking layer 144 d refers to the sum of the number of moles of the N-type dopant and the number of moles of the non-N-type dopant in the material constituting the electron blocking layer 144 d .

[0182] Figure 6B is a cross-sectional view of a light emitting element 140 including a P-type dopant in a hole blocking layer according to one embodiment of the present disclosure.

[0183] Reference Figure 6B , the light emitting element 140 may include a hole blocking layer 146d including a P-type dopant. In one embodiment, the light emitting element 140 is included in a first pixel of a plurality of first pixels in the first active area AA1, and includes a light emitting layer and a first hole blocking layer on the light emitting layer. In one embodiment, the light emitting element 140 is included in a second pixel of a plurality of second pixels in the second active area AA2, and includes a light emitting layer and a second hole blocking layer on the light emitting layer.

[0184] In one embodiment, the amount of P-type dopant in at least the second hole blocking layer is greater than the amount of P-type dopant in at least the first hole blocking layer. In one embodiment, the amount is the number of moles of dopant, and the number of moles of P-type dopant in at least one hole blocking layer 146d located in the second active region may be greater than the number of moles of P-type dopant in at least one hole blocking layer 146d located in the first active region. However, it should be understood that in other embodiments, the amount may refer to the weight of the dopant in the hole blocking layer, the volume of the dopant, etc.

[0185] The P-type dopant in the hole blocking layer 146d may be at least one of the following compounds, but is not limited thereto:

[0186]

[0187] In one embodiment, the light-emitting element 140 of the first pixel or the second pixel includes a first electrode layer 141, a common hole transport layer 143C on the first electrode layer 141, a red light-emitting auxiliary layer 143R on a first portion of the common hole transport layer 143C, a green light-emitting auxiliary layer 143G on a second portion of the common hole transport layer 143C, a light-emitting layer 145, a second hole blocking layer 146d on the light-emitting layer 145, and an electron transport layer 147.

[0188] As the number of moles of the P-type dopant in the hole blocking layer 146 d increases, the energy level of HOMO of the hole blocking layer 146 d may decrease.

[0189] In addition, when the molar number of the P-type dopant in the hole blocking layer 146d increases, the movement of holes from the light-emitting layer 145 to the hole blocking layer 146d is blocked, and thus a recombination zone is formed in the middle of the light-emitting layer 145, thereby increasing the area of ​​the recombination zone.

[0190] Therefore, as the area of ​​the recombination zone increases, the lifetime increases.

[0191] Therefore, when the molar number of the P-type dopant in at least one hole blocking layer 146d in the second active area is greater than that in the first active area, the lifetime of the light emitting element 140 in the second active area AA2 increases.

[0192] In addition, when the molar number of the P-type dopant in at least one hole blocking layer 146d in the second active area is greater than that in the first active area, the brightness difference between the second active area AA2 and the first active area AA1 becomes smaller.

[0193] Under the same current, the lifetime of the light emitting element 140 in the second active area AA2 may be increased by at least 1.5 times the lifetime of the light emitting element 140 in the first active area AA1.

[0194] As the life span of the light emitting element 140 located in the second active area AA2 increases, the brightness difference between the second active area AA2 and the first active area AA1 may be reduced even when driven for a long time.

[0195] As another example, only the hole blocking layer 146 d located in the second active region may include the P type dopant, and the hole blocking layer 146 located in the first active region may not include the P type dopant.

[0196] When the hole blocking layer 146d located only in the second active area includes the P-type dopant, the brightness difference between the second active area AA2 and the first active area AA1 may become smaller.

[0197] Meanwhile, in another embodiment, the light emitting element 140 located in the second active area AA2 may have a tandem structure. Specifically, the red organic light emitting layer 145R may include a first red sub-organic light emitting layer (not shown) and a second red sub-organic light emitting layer (not shown), and a first charge generation layer (Charge Generation Layer, not shown) may be disposed between the first red sub-organic light emitting layer (not shown) and the second red sub-organic light emitting layer (not shown). In addition, the green organic light emitting layer 145G may include a first green sub-organic light emitting layer (not shown) and a second green sub-organic light emitting layer (not shown), and a second charge generation layer (Charge Generation Layer, not shown) may be disposed between the first green sub-organic light emitting layer (not shown) and the second green sub-organic light emitting layer (not shown). In addition, the blue organic light emitting layer 145B may include a first blue sub-organic light emitting layer (not shown) and a second blue sub-organic light emitting layer (not shown), and a third charge generation layer (Charge Generation Layer, not shown) may be disposed between the first blue sub-organic light emitting layer (not shown) and the second blue sub-organic light emitting layer (not shown). When the light emitting element 140 in the second active area AA2 has the series structure as described above, the efficiency of the light emitting element 140 in the second active area AA2 can be improved, and thus the brightness difference between the second active area AA2 and the first active area AA1 can be further reduced.

[0198] Fig. 7A HOMO and LUMO energy levels of the light emitting element 140 depending on whether an N-type dopant is present in the electron blocking layer 144 d according to one embodiment of the present disclosure are shown.

[0199] In the present disclosure, cyclic voltammetry (CV) is used to measure the HOMO and LUMO energy levels.

[0200] Referring to Fig. 7A , it can be seen that the LUMO of the electron blocking layer 144d is lower when the electron blocking layer 144d includes an N-type dopant (<EBL w / dopant>) compared to when the electron blocking layer 144 does not include an N-type dopant (<EBL w / o dopant>).

[0201] As the LUMO of the electron blocking layer 144d decreases from -1.53 eV to -2.10 eV, the energy gap between the light-emitting layer 145 and the electron blocking layer 144d becomes smaller. Therefore, the recombination zone moves towards the hole blocking layer 146 and towards the center of the light-emitting layer 145, and the hole mobility increases, thus increasing the lifespan of the light-emitting element 140.

[0202] Figure 7B Shows the HOMO and LUMO energy levels of the light-emitting element 140 depending on the presence of a P-type dopant in the hole blocking layer 146d according to another embodiment of the present disclosure.

[0203] Referring to Figure 7B , it can be seen that the HOMO of the hole blocking layer 146d is lower when the hole blocking layer 146d includes a P-type dopant (<HBL w / dopant>) compared to when the hole blocking layer 146 does not include a P-type dopant (<HBL w / o dopant>).

[0204] When the HOMO of the hole blocking layer 146d decreases from -6.20 eV to -6.50 eV, the movement of holes from the light-emitting layer 145 to the hole blocking layer 146d is blocked, and thus a recombination zone is formed in the middle of the light-emitting layer 145, thereby increasing the area of the recombination zone. Therefore, the lifespan of the light-emitting element 140 increases.

[0205] Figure 8 Is a flowchart of a method for manufacturing a light-emitting element according to an embodiment of the present disclosure.

[0206] Referring to Figure 8 , a method for manufacturing a light-emitting element according to an embodiment of the present disclosure includes a hole transport layer deposition step S10, an electron blocking layer deposition step S20, a light-emitting layer deposition step S30, a hole blocking layer deposition step S40, and an electron transport layer deposition step S50.

[0207] In the method for manufacturing a light-emitting element according to an embodiment of the present disclosure, unless otherwise specified, the details regarding the hole transport layer, the electron blocking layer, the light-emitting layer, the hole blocking layer and the electron transport layer are the same as the above-mentioned details regarding the hole transport layer 143, the electron blocking layer 144, the light-emitting layer 145, the hole blocking layer 146 and the electron transport layer 147 of the light-emitting element 140 according to one embodiment.

[0208] The hole transport layer deposition step S10 is a step of depositing a hole transport layer using an open metal mask (OMM).

[0209] The electron blocking layer deposition step S20 is a step of depositing the electron blocking layer using an open metal mask (OMM).

[0210] The light emitting layer deposition step S30 is a step of depositing the light emitting layer using a fine metal mask (Fine Metal Mask, FMM).

[0211] The hole blocking layer deposition step S40 is a step of depositing the hole blocking layer using an open metal mask (OMM).

[0212] The electron transport layer deposition step S50 is a step of depositing the electron transport layer using an open metal mask (OMM).

[0213] Fig.9A is a flowchart of a method for manufacturing a light emitting element according to another embodiment of the present disclosure.

[0214] In the method for manufacturing a light-emitting element according to an embodiment of the present disclosure, unless otherwise specified, the details regarding the hole transport layer, the electron blocking layer, the light-emitting layer, the hole blocking layer and the electron transport layer are the same as the above-mentioned details regarding the hole transport layer 143, the electron blocking layer 144, 144d, the light-emitting layer 145, the hole blocking layer 146 and the electron transport layer 147 of the light-emitting element 140 according to one embodiment.

[0215] Reference Fig.9A The electron blocking layer deposition step S20 may include a first electron blocking layer deposition step S21 and a second electron blocking layer deposition step S22.

[0216] As an example, the first electron blocking layer deposition step S21 may be a step of depositing an electron blocking layer in the first active area AA1, and the second electron blocking layer deposition step S22 may be a step of depositing an electron blocking layer in the second active area AA2.

[0217] However, the present disclosure is not necessarily limited thereto, and the first electron blocking layer deposition step S21 may be a step of depositing an electron blocking layer in the second active area AA2 , and the second electron blocking layer deposition step S22 may be a step of depositing an electron blocking layer in the first active area AA1 .

[0218] In order to manufacture the display device 100 in which the molar number of the N-type dopant in the at least one electron blocking layer 144d located in the second active region is greater than the molar number of the N-type dopant in the at least one electron blocking layer 144d located in the first active region, it is necessary to Figure 8 The light emitting element manufacturing method described herein uses one more mask than the number of masks.

[0219] Fig. 9B is a flowchart of a method for manufacturing a light emitting element according to another embodiment of the present disclosure.

[0220] In the method for manufacturing a light-emitting element according to an embodiment of the present disclosure, unless otherwise specified, the details regarding the hole transport layer, the electron blocking layer, the light-emitting layer, the hole blocking layer and the electron transport layer are the same as the above-mentioned details regarding the hole transport layer 143, the electron blocking layer 144, the light-emitting layer 145, the hole blocking layer 146d and the electron transport layer 147 of the light-emitting element 140 according to one embodiment.

[0221] Reference Fig. 9B , the hole blocking layer deposition step S40 may include a first hole blocking layer deposition step S41 and a second hole blocking layer deposition step S42 .

[0222] As an example, the first hole blocking layer deposition step S41 may be a step of depositing a hole blocking layer in the first active area AA1, and the second hole blocking layer deposition step S42 may be a step of depositing a hole blocking layer in the second active area AA2.

[0223] However, the present disclosure is not necessarily limited thereto, and the first hole blocking layer deposition step S41 may be a step of depositing a hole blocking layer in the second active area AA2 , and the second hole blocking layer deposition step S42 may be a step of depositing a hole blocking layer in the first active area AA1 .

[0224] In order to manufacture the display device 100 in which the molar number of the P-type dopant in the at least one hole blocking layer 146d located in the second active region is greater than the molar number of the P-type dopant in the at least one hole blocking layer 146d located in the first active region, it is necessary to compare the molar number of the P-type dopant in the at least one hole blocking layer 146d located in the second active region with respect to the display device 100. Figure 8 The light emitting element manufacturing method described herein uses one more mask than the number of masks.

[0225] Fig.10The shape of a mask that can be applied to the embodiments of the present disclosure is schematically shown.

[0226] Reference Fig.10 , <Mask 1> may be a mask used in the step of depositing an electron blocking layer or a hole blocking layer in the first active area AA1.

[0227] <Mask 2> may be a mask used in the step of depositing an electron blocking layer or a hole blocking layer in the second active area AA2.

[0228] Hereinafter, embodiments of the present disclosure will be described in detail through experimental examples, but the present disclosure is not limited to the following examples.

[0229] The electroluminescence (EL) characteristics were measured by applying a 4.5V forward bias DC voltage to the blue light emitting element, and the measurement results are shown in the following Table 1. In the following Table 1, Comparative Example 1 is an example in which the electron blocking layer of the blue light emitting element is not doped with an N-type dopant, and Example 1 is an example in which the electron blocking layer of the blue light emitting element is doped with an N-type dopant.

[0230] [Table 1]

[0231] Luminous efficiency (cd / A) T95 life (h) Comparative Example 1 6.1 450 Example 1 5.8 600

[0232] It can be seen from the results in Table 1 above that, compared with the case where the electron blocking layer is not doped with the N-type dopant, when the electron blocking layer of the blue light emitting element is doped with the N-type dopant, the life span increases from 450 hours to 600 hours.

[0233] In other words, it can be seen that the efficiency decreases from 6.1 cd / A to 5.8 cd / A, which is 95% of the efficiency of Comparative Example 1, but the lifespan increases from 450 hours to 600 hours, which is 133% of the lifespan of Comparative Example 1.

[0234] For Comparative Example 1 and Example 1 in Table 1 above, the brightness difference between the first active region and the second active region was measured. The measurement results are shown in Table 2 below.

[0235] [Table 2]

[0236]

[0237] From the results in Table 2 above, it can be seen that compared with the case where the electron blocking layer is not doped with N-type dopants, when the electron blocking layer of the blue light emitting element is doped with N-type dopants, the brightness difference between the first active region and the second active region is increased from 28 cd / m 2 Reduced to 16cd / m 2 .

[0238] As the brightness difference between the first active region and the second active region decreases, the boundary between the first active region and the second active region is no longer clearly recognized.

[0239] Electroluminescence (EL) characteristics were measured by applying a forward bias DC voltage to the red light emitting element, the green light emitting element, and the blue light emitting element, and the measurement results are shown in the following Table 3. In the following Table 3, Comparative Example 2 is an example in which the hole blocking layer of the light emitting element is not doped with a P-type dopant, and Example 2 is an example in which the hole blocking layer of the light emitting element is doped with a P-type dopant.

[0240] [Table 3]

[0241]

[0242]

[0243] It can be seen from the results in Table 3 above that, compared with the case where the hole blocking layer is not doped with a P-type dopant, the T95 lifetime increases when the hole blocking layer of the green light-emitting element and the blue light-emitting element is doped with a P-type dopant.

[0244] This confirms that, when the hole blocking layer of the red light emitting element is doped with a P-type dopant, the efficiency is improved but the lifetime is reduced.

[0245] The above-mentioned embodiments of the present disclosure are briefly described as follows.

[0246] A display device according to the contents of the present disclosure includes: a first active area, in which a plurality of first pixels are arranged, and the plurality of first pixels have a first resolution; a second active area, in which a plurality of second pixels are arranged, and the plurality of second pixels have a second resolution lower than the first resolution; and a plurality of light-emitting elements arranged in each of the plurality of first pixels and the plurality of second pixels, wherein each of the plurality of light-emitting elements includes: a first electrode layer; an electron blocking layer on the first electrode layer; a light-emitting layer on the electron blocking layer; a hole blocking layer on the light-emitting layer; and a second electrode layer on the hole blocking layer; wherein at least one of the electron blocking layer or the hole blocking layer includes a dopant, and the number of moles of the dopant in at least one of the electron blocking layer or the hole blocking layer located in the second active area may be greater than the number of moles of the dopant in at least one of the electron blocking layer or the hole blocking layer located in the first active area.

[0247] In the display device according to an embodiment of the present disclosure, the electron blocking layer includes an N-type dopant, and the number of moles of the N-type dopant in the electron blocking layer may satisfy the following Equation 1:

[0248] [Equation 1]

[0249] 0≤e P1<e P2

[0250] In the above equation 1, e P1 is the number of moles of N-type dopant in the electron blocking layer in the first pixel, e P2 is the number of moles of the N-type dopant in the electron blocking layer in the second pixel.

[0251] In the display device according to the embodiment of the present disclosure, the number of moles of the N-type dopant in the electron blocking layer may satisfy the following Equation 2:

[0252] [Equation 2]

[0253] 0=e P1 <e P2

[0254] In the above equation 2, e P1 is the number of moles of N-type dopant in the electron blocking layer in the first pixel, e P2 is the number of moles of the N-type dopant in the electron blocking layer in the second pixel.

[0255] In the display device according to the embodiment of the present disclosure, the number of moles of the N-type dopant in the electron blocking layer may satisfy the following Equation 3:

[0256] [Equation 3]

[0257] 0≤e P1 <e P2 ≤0.5E P2

[0258] In the above equation 3, e P1 is the number of moles of N-type dopant in the electron blocking layer in the first pixel, e P2 is the number of moles of N-type dopant in the electron blocking layer in the second pixel, E P2 is the number of moles of the electron blocking layer in the second pixel.

[0259] In the display device according to the embodiment of the present disclosure, the N-type dopant may be at least one of the following compounds:

[0260]

[0261] In the display device according to the embodiment of the present disclosure, the hole blocking layer includes a P-type dopant, and the number of moles of the P-type dopant in the hole blocking layer may satisfy the following Equation 4:

[0262] [Equation 4]

[0263] 0≤h P1 <hP2

[0264] In the above equation 4, h P1 is the number of moles of the P-type dopant in the hole blocking layer in the first pixel, h P2 is the number of moles of the P-type dopant in the hole blocking layer in the second pixel.

[0265] In the display device according to the embodiment of the present disclosure, the number of moles of the P-type dopant in the hole blocking layer may satisfy the following Equation 5:

[0266] [Equation 5]

[0267] 0 = h P1 <h P2

[0268] In the above equation 5, h P1 is the number of moles of the P-type dopant in the hole blocking layer in the first pixel, h P2 is the number of moles of the P-type dopant in the hole blocking layer in the second pixel.

[0269] In the display device according to the embodiment of the present disclosure, the P-type dopant may be at least one of the following compounds:

[0270]

[0271] A display device according to an embodiment of the present disclosure includes: a first active area, in which a plurality of first pixels are arranged, and the plurality of first pixels have a first resolution; a second active area, in which a plurality of second pixels are arranged, and the plurality of second pixels have a second resolution lower than the first resolution; and a plurality of light-emitting elements arranged in each of the plurality of first pixels and the plurality of second pixels, wherein each of the plurality of light-emitting elements includes: a first electrode layer; an electron blocking layer on the first electrode layer; a light-emitting layer on the electron blocking layer; and a second electrode layer on the light-emitting layer; wherein the electron blocking layer includes a dopant, and the number of moles of the dopant in the electron blocking layer located in the second active area may be greater than the number of moles of the dopant in the electron blocking layer located in the first active area.

[0272] A display device according to an embodiment of the present disclosure includes: a first active area, in which a plurality of first pixels are arranged, and the plurality of first pixels have a first resolution; a second active area, in which a plurality of second pixels are arranged, and the plurality of second pixels have a second resolution lower than the first resolution; and a plurality of light-emitting elements arranged in each of the plurality of first pixels and the plurality of second pixels, wherein each of the plurality of light-emitting elements includes: a first electrode layer; a light-emitting layer on the first electrode layer; a hole blocking layer on the light-emitting layer; and a second electrode layer on the hole blocking layer; wherein the hole blocking layer includes a dopant, and the number of moles of the dopant in the hole blocking layer located in the second active area may be greater than the number of moles of the dopant in the hole blocking layer located in the first active area.

[0273] The above description has been presented to enable those skilled in the art to make and use the technical ideas of the present disclosure, and has been provided in the context of specific applications and their requirements. Various modifications, additions and substitutions to the described embodiments will be apparent to those skilled in the art, and the general principles defined herein may be applied to other embodiments and applications without departing from the spirit and scope of the present disclosure. The above description and accompanying drawings provide examples of the technical ideas of the present disclosure for illustrative purposes only. That is, the disclosed embodiments are intended to illustrate the scope of the technical ideas of the present disclosure.

Claims

1. A display device, comprising: a first active area in which a plurality of first pixels are disposed, wherein the plurality of first pixels have a first resolution; a second active area in which a plurality of second pixels are disposed, wherein the plurality of second pixels have a second resolution lower than the first resolution; and a plurality of light emitting elements provided in each of the plurality of first pixels and the plurality of second pixels, Each of the plurality of light emitting elements comprises: a first electrode layer; an electron blocking layer on the first electrode layer; a light-emitting layer on the electron blocking layer; a hole blocking layer on the light-emitting layer; and a second electrode layer on the hole blocking layer; Wherein at least one of the electron blocking layer or the hole blocking layer includes a dopant, and the number of moles of the dopant in at least one of the electron blocking layer or the hole blocking layer in the second pixel located in the second active region is greater than the number of moles of the dopant in at least one of the electron blocking layer or the hole blocking layer in the first pixel located in the first active region.

2. The display device according to claim 1, wherein the electron blocking layer comprises an N-type dopant, and the number of moles of the N-type dopant in the electron blocking layer satisfies the following equation 1: [Equation 1] 0≤e P1 <e P2 where e P1 is the number of moles of the N-type dopant in the electron blocking layer in the first pixel, e P2 is the number of moles of the N-type dopant in the electron blocking layer in the second pixel.

3. The display device according to claim 2, wherein the number of moles of the N-type dopant in the electron blocking layer satisfies the following equation 2: [Equation 2] 0=e P1 <e P2 where e P1 is the number of moles of the N-type dopant in the electron blocking layer in the first pixel, e P2 is the number of moles of the N-type dopant in the electron blocking layer in the second pixel.

4. The display device according to claim 2, wherein the number of moles of the N-type dopant in the electron blocking layer satisfies the following equation 3: [Equation 3] 0≤e P1 <e P2 ≤0.5E P2 where e P1 is the number of moles of the N-type dopant in the electron blocking layer in the first pixel, e P2 is the number of moles of the N-type dopant in the electron blocking layer in the second pixel, E P2 is the number of moles of the electron blocking layer in the second pixel.

5. The display device according to claim 2, wherein the N-type dopant is at least one of the following compounds:

6. The display device according to claim 1, wherein the hole blocking layer includes a P-type dopant, and the number of moles of the P-type dopant in the hole blocking layer satisfies the following equation 4: [Equation 4] 0≤h P1 <h P2 where h P1 is the number of moles of the P-type dopant in the hole blocking layer in the first pixel, h P2 is the number of moles of the P-type dopant in the hole blocking layer in the second pixel.

7. The display device according to claim 6, wherein the number of moles of the P-type dopant in the hole blocking layer satisfies the following equation 5: [Equation 5] 0=h P1 <h P2 where h P1 is the number of moles of the P-type dopant in the hole blocking layer in the first pixel, h P2 is the number of moles of the P-type dopant in the hole blocking layer in the second pixel.

8. The display device according to claim 6, wherein the P-type dopant is at least one of the following compounds:

9. A display device, comprising: substrate; a plurality of first pixels, the plurality of first pixels being disposed in a first active region of the substrate, wherein the plurality of first pixels have a first resolution, wherein at least the first pixel comprises a light emitting element, the light emitting element comprising a first electron blocking layer and a light emitting layer on the first electron blocking layer; a plurality of second pixels disposed in a second active region of the substrate, wherein the plurality of second pixels have a second resolution lower than the first resolution, wherein at least the second pixel comprises a light emitting element, the light emitting element comprising a second electron blocking layer and a light emitting layer on the second electron blocking layer; and At least the second electron blocking layer includes a dopant, and an amount of the dopant in the second electron blocking layer located in the second active region is greater than an amount of the dopant in the first electron blocking layer located in the first active region. 10 . The display device according to claim 9 , wherein the amount of the dopant in the first electron blocking layer is a first molar number of the dopant, and wherein the amount of the dopant in the second electron blocking layer is a second molar number of the dopant. The display device according to claim 9 , wherein the first electron blocking layer does not include the dopant.

12. The display device according to claim 9, wherein the dopant is an N-type dopant, wherein the dopant is at least one of the following compounds:

13. The display device according to claim 9, wherein the second pixel comprises: a first electrode; a common hole transport layer on the first electrode; a red light-emitting auxiliary layer on the first portion of the common hole transport layer; a green light-emitting auxiliary layer on the second portion of the common hole transport layer; a second electron blocking layer on the red light-emitting auxiliary layer, the green light-emitting auxiliary layer, and a third portion of the common hole transport layer; the light-emitting layer; an electron transport layer on the light-emitting layer; and A second electrode is on the electron transport layer. 14 . The display device according to claim 9 , further comprising a lens disposed under the plurality of second pixels.

15. A display device, comprising: substrate; a plurality of first pixels, the plurality of first pixels being disposed in a first active area of ​​the substrate, wherein the plurality of first pixels have a first resolution, wherein at least the first pixel comprises a light emitting element, the light emitting element comprising a light emitting layer and a first hole blocking layer on the light emitting layer; a plurality of second pixels disposed in a second active area of ​​the substrate, wherein the plurality of second pixels have a second resolution lower than the first resolution, wherein at least the second pixel comprises a light emitting element, the light emitting element comprising a light emitting layer and a second hole blocking layer on the light emitting layer; and At least the second hole blocking layer includes a dopant, and an amount of the dopant in the second hole blocking layer located in the second active region is greater than an amount of the dopant in the first hole blocking layer located in the first active region. 16 . The display device of claim 15 , wherein the amount of the dopant in the first hole blocking layer is a first molar number of the dopant, and wherein the amount of the dopant in the second hole blocking layer is a second molar number of the dopant. The display device according to claim 15 , wherein the first hole blocking layer does not include the dopant.

18. The display device according to claim 15, wherein the dopant is a P-type dopant, wherein the dopant is at least one of the following compounds:

19. The display device according to claim 15, wherein the second pixel comprises: a first electrode; a common hole transport layer on the first electrode; a red light-emitting auxiliary layer on the first portion of the common hole transport layer; a green light-emitting auxiliary layer on the second portion of the common hole transport layer; the light-emitting layer; a second hole blocking layer on the light-emitting layer; an electron transport layer on the second hole blocking layer; and A second electrode is on the electron transport layer. 20 . The display device of claim 15 , further comprising a lens disposed under the plurality of second pixels.

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