Power semiconductor device and method for manufacturing power semiconductor device

Abstract

A power semiconductor device (100) is provided with: a heat sink-integrated power module (20) in which a power module and a heat sink are integrated; a holding part having a box shape in which a plurality of openings (41) are formed on one surface connecting the inlet and the outlet; and a structure support part (50) which is provided inside the holding part, receives a load in a direction from the one surface toward the inside of the holding part, and supports the one surface. In a plurality of heat sink integrated power modules (20), a plurality of heat sink fins are inserted into a holding section from an opening (41), and an outer peripheral edge (1bp) of a heat sink base (1b) is supported on one surface on an adjacent region (413) adjacent to the opening (41) in the in-plane direction of the heat sink base (1b). The structural support part (50) is disposed at a position corresponding to the heat sink bases (1b) of adjacent heat sink integrated power modules (20) in the width direction of the holding part.

Description

Technical Field

[0001] The present invention relates to a power semiconductor device equipped with a heat sink and a power module and a manufacturing method thereof. Background Art

[0002] Patent Document 1 describes a heat dissipation device in which a plurality of module-type cooling devices including heat dissipation plates on which heat generating elements are arranged are inserted into an opening of a housing and are held by the housing.

[0003] Patent Document 1: Japanese Patent No. 6448732 Summary of the invention

[0004] However, when the structure of the heat dissipation device described in the above-mentioned patent document 1 is applied and multiple power modules and multiple heat sinks are fixed to one housing, the housing may bend due to the weight of the power modules and the heat sink. When the housing is bent, a gap may be generated between the heat sink and the housing, the air volume between the heat dissipation fins in the heat sink may decrease, and the heat dissipation performance of the heat sink may decrease. In addition, when the housing is bent, the heat sink may not be properly fixed to the housing. When the heat sink cannot be properly fixed to the housing, sufficient vibration resistance of the product cannot be obtained.

[0005] The present invention has been made in view of the above-mentioned circumstances, and an object of the present invention is to obtain a power semiconductor device capable of suppressing the deflection of a holding portion on which a plurality of power modules and a heat sink are mounted.

[0006] In order to solve the above problems and achieve the purpose, the power semiconductor device of the present invention has: a heat sink integrated power module, which integrates the power module and the heat sink, and the plurality of heat dissipation fins of the heat sink are arranged on the heat sink base to dissipate the heat generated in the power module; a holding part, which has a box shape, the wind inlet and the wind outlet of the holding part are arranged opposite to each other, and a plurality of openings are formed on a surface connecting the inlet and the outlet; and a support part, which is arranged inside the holding part, bears the load from one surface toward the inside of the holding part, and supports one surface. For a plurality of heat sink integrated power modules, a plurality of heat dissipation fins are inserted into the inside of the holding part from the opening, and in the in-plane direction of the heat sink base, the outer peripheral edge of the heat sink base is supported on one surface on an adjacent area adjacent to the opening. The structural support part is arranged at a position corresponding to the heat sink bases of adjacent heat sink integrated power modules in the width direction of the holding part, and the width direction of the holding part is a direction orthogonal to the direction from the inlet toward the outlet.

[0007] Effects of the Invention

[0008] According to the power semiconductor device according to the present invention, it is possible to suppress the deflection of the holding portion on which the plurality of power modules and the heat sink are mounted. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 It is a plan view showing the structure of the power semiconductor device according to the first embodiment.

[0010] Figure 2 is a first cross-sectional view showing the structure of the power semiconductor device according to the first embodiment, taken along Figure 1 Cross-sectional view along line II-II.

[0011] Figure 3 is a second cross-sectional view showing the structure of the power semiconductor device according to the first embodiment, taken along Figure 1 Cross-sectional view along line III-III.

[0012] Figure 4 It is a cross-sectional view of the heat sink integrated power module according to the first embodiment.

[0013] Figure 5 4 is a cross-sectional view of a heat sink-integrated power module according to a first modification to which the heat sink according to the first modification is attached.

[0014] Figure 6 4 is a cross-sectional view of a heat sink-integrated power module according to a second modification example to which the heat sink according to the second modification example according to the first embodiment is mounted.

[0015] Figure 7 It is a cross-sectional view of a heat sink-integrated power module according to a third modified example of the first embodiment.

[0016] Figure 8 It is a plan view showing the outer frame of the power semiconductor device according to the first embodiment.

[0017] Fig. 9 is a cross-sectional view showing the outer frame of the power semiconductor device according to the first embodiment, taken along Figure 8 A cross-sectional view taken along line IX-IX.

[0018] Fig.10 It is a plan view showing a casing of the power semiconductor device according to the first embodiment.

[0019] Fig.11 It is a first plan view schematically showing an example of the flow of the method for manufacturing the power semiconductor device according to the first embodiment.

[0020] Fig.12 This is a first cross-sectional view schematically showing an example of the flow of the method for manufacturing the power semiconductor device according to the first embodiment.

[0021] Fig.13 It is a second plan view schematically showing an example of the flow of the method for manufacturing the power semiconductor device according to the first embodiment.

[0022] Fig.14 This is a second cross-sectional view schematically showing an example of the flow of the method for manufacturing the power semiconductor device according to the first embodiment.

[0023] Fig.15 This is a third cross-sectional view schematically showing an example of the flow of the method for manufacturing the power semiconductor device according to the first embodiment.

[0024] Fig.16 It is a third plan view schematically showing an example of the flow of the method for manufacturing the power semiconductor device according to the first embodiment.

[0025] Fig.17 It is a fourth plan view schematically showing an example of the flow of the method for manufacturing the power semiconductor device according to the first embodiment.

[0026] Fig.18 It is a fifth plan view schematically showing an example of the flow of the method for manufacturing the power semiconductor device according to the first embodiment.

[0027] Fig.19 This is a flowchart showing the flow of the method for manufacturing the power semiconductor device according to the first embodiment.

[0028] Fig. 20 This is a first schematic diagram for explaining an example of the relationship between the dimensions of the opening of the case of the power semiconductor device according to the first embodiment and the heat sink base of the heat sink-integrated power module.

[0029] Fig.21 This is a second schematic diagram for explaining an example of the relationship between the dimensions of the opening of the case of the power semiconductor device according to the first embodiment and the heat sink base of the heat sink-integrated power module.

[0030] Fig. 22 This is a third schematic diagram for explaining an example of the relationship between the dimensions of the opening of the case of the power semiconductor device according to the first embodiment and the heat sink base of the heat sink-integrated power module.

[0031] Fig.23 It is a first cross-sectional view showing a method for manufacturing a power semiconductor device according to a comparative example of the first embodiment.

[0032] Fig.24It is a second cross-sectional view showing the method for manufacturing the power semiconductor device of the comparative example according to the first embodiment.

[0033] Fig.25 This is a schematic diagram for explaining the flow of wind inside the holding portion of the power semiconductor device according to the first embodiment.

[0034] Fig.26 This is a schematic diagram for explaining the flow of wind inside the holding portion of the power semiconductor device of the comparative example according to the first embodiment.

[0035] Fig. 27 This is a first cross-sectional view showing an example of a method of fixing the structural support portion of the power semiconductor device according to the first embodiment to the outer frame.

[0036] Fig.28 This is a second cross-sectional view showing an example of a method of fixing the structural support portion of the power semiconductor device according to the first embodiment to the outer frame.

[0037] Fig.29 This is a third cross-sectional view showing an example of a method of fixing the structural support portion of the power semiconductor device according to the first embodiment to the outer frame.

[0038] Fig.30 This is a fourth cross-sectional view showing an example of a method of fixing the structural support portion of the power semiconductor device according to the first embodiment to the outer frame.

[0039] Fig.31 This is a first cross-sectional view showing an example of a method of fixing the structural support portion of the power semiconductor device according to the first embodiment to the case.

[0040] Fig.32 This is a second cross-sectional view showing an example of a method of fixing the structural support portion of the power semiconductor device according to the first embodiment to the case.

[0041] Fig.33 This is a flowchart showing the flow of another method for manufacturing the power semiconductor device according to the first embodiment.

[0042] Fig.34 This is a first cross-sectional view showing the structure of the power semiconductor device in the case where the structure supporting portion with an elastic function is applied to the power semiconductor device according to the first embodiment.

[0043] Fig.35 This is a second cross-sectional view showing the structure of the power semiconductor device in the case where the structure supporting portion with an elastic function is applied to the power semiconductor device according to the first embodiment.

[0044] Fig.36This is a first cross-sectional view for explaining the positional relationship among the structural support portion of the power semiconductor device according to the first embodiment, the heat sink base of the heat sink-integrated power module, and the case.

[0045] Fig.37 This is a second cross-sectional view for explaining the relationship among the structural support portion of the power semiconductor device according to the first embodiment, the heat sink base of the heat sink-integrated power module, and the case.

[0046] Fig.38 This is a third cross-sectional view for explaining the relationship among the structural support portion of the power semiconductor device according to the first embodiment, the heat sink base of the heat sink-integrated power module, and the case.

[0047] Fig.39 This is a first plan view for explaining the shape and arrangement of the structure support portion of the power semiconductor device according to the first embodiment.

[0048] Fig.40 This is a second plan view for explaining the shape and arrangement of the structure support portion of the power semiconductor device according to the first embodiment.

[0049] Fig.41 This is a third plan view for explaining the shape and arrangement of the structure support portion of the power semiconductor device according to the first embodiment.

[0050] Fig.42 This is a fourth plan view for explaining the shape and arrangement of the structure support portion of the power semiconductor device according to the first embodiment.

[0051] Fig.43 It is a cross-sectional view showing the structure of a power semiconductor device according to the second embodiment.

[0052] Fig.44 It is a cross-sectional view showing the structure of a power semiconductor device according to the second embodiment.

[0053] Fig.45 It is a cross-sectional view showing the structure of a heat sink-integrated power module according to the third embodiment.

[0054] Fig.46 It is a cross-sectional view showing the structure of a power semiconductor device according to the third embodiment. DETAILED DESCRIPTION

[0055] Hereinafter, a power semiconductor device and a method for manufacturing a power semiconductor device according to an embodiment will be described in detail with reference to the drawings.

[0056] Implementation Method 1

[0057] Figure 1It is a plan view showing the structure of the power semiconductor device 100 according to the first embodiment. Figure 2 is a first cross-sectional view showing the structure of the power semiconductor device 100 according to the first embodiment, taken along Figure 1 Cross-sectional view along line II-II. Figure 3 is a second cross-sectional view showing the structure of the power semiconductor device 100 according to the first embodiment, taken along Figure 1 In addition, regarding the cross-sectional view, a part of the shadow is omitted for easy observation.

[0058] In implementation mode 1, Figures 1 to 3 The left-right direction in FIG. 1 is the left-right direction of the power semiconductor device 100 and the components of the power semiconductor device 100. The left-right direction corresponds to Figures 1 to 3 The X direction in corresponds to the width direction of the power semiconductor device 100 and the structural part of the power semiconductor device 100. Figure 2 and Figure 3 The depth direction of the paper and Figure 1 The vertical direction in FIG. 1 is defined as the depth direction of the power semiconductor device 100 and the structural part of the power semiconductor device 100. The depth direction corresponds to Figures 1 to 3 The Y direction in corresponds to the depth direction of the power semiconductor device 100 and the structural part of the power semiconductor device 100. In addition, the depth direction can also be referred to as the direction of flow of the airflow 200 supplied to the power semiconductor device 100 from the air supply system (not shown), that is, the air supply direction or the wind inflow direction of the power semiconductor device 100. In addition, the depth direction can also be referred to as the direction of flow of the airflow 200 inside the retaining portion 60. In addition, Figure 2 and Figure 3 The up and down directions and Figure 1 The depth direction of the paper in FIG. 1 is defined as the vertical direction of the power semiconductor device 100 and the components of the power semiconductor device 100. The vertical direction corresponds to Figures 1 to 3 The Z direction in φ corresponds to the height direction of the power semiconductor device 100 and the structural parts of the power semiconductor device 100 .

[0059] In addition, Figure 2 and Figure 3 The proximal side of the paper in the depth direction and Figure 1 The lower side of is set as the front side of the power semiconductor device 100 and the heat sink integrated power module 20. Figure 2 and Figure 3 The far side of the paper in the depth direction and Figure 1The upper side is set as the back side of the power semiconductor device 100 and the heat sink integrated power module 20. In addition, the expressions of "left and right", "up and down", "front" and "back" are recorded for convenience and do not mean the actual "left and right", "up and down", "front" and "back", and these directions may also be opposite.

[0060] In the power semiconductor device 100, a plurality of heat sink integrated power modules 20 are mounted on a holding portion 60. The power semiconductor device 100 includes a structural support portion 50, a holding portion 60, and a plurality of heat sink integrated power modules 20. Figure 1 1 shows a power semiconductor device 100 having six heat sink integrated power modules 20 arranged in two columns and three rows as an example of a power semiconductor device having a plurality of heat sink integrated power modules 20 mounted thereon according to the first embodiment.

[0061] The holding portion 60 accommodates and holds a part of the plurality of heat sink integrated power modules 20 in the power semiconductor device 100. That is, the plurality of heat sink integrated power modules 20 are held by the holding portion 60 with a part of them being accommodated in the holding portion 60. The holding portion 60 is constituted by the case 40 and the outer frame 30.

[0062] At once Figure 1 In the power semiconductor device 100 shown in the figure, the heat sink integrated power module 20a, the heat sink integrated power module 20b, the heat sink integrated power module 20c, the heat sink integrated power module 20d, the heat sink integrated power module 20e, and the heat sink integrated power module 20f as the heat sink integrated power module 20 are mounted on the holding portion 60. In addition, the number of heat sink integrated power modules 20 mounted in the power semiconductor device 100 is not limited to 6. For example, two or more heat sink integrated power modules 20 may be mounted on the holding portion 60 in the left-right direction. In such a mode, the effect of the power semiconductor device 100 described later can also be obtained.

[0063] The airflow 200 sent from the air supply system flows from the front side to the back side inside the holding portion 60. In addition, the direction in which the airflow 200 flows may also be the direction from the back side to the front side.

[0064] The heat sink integrated power module 20 is a power semiconductor module mounted on the power semiconductor device 100 and is a resin molded power module. Figure 4 1 is a cross-sectional view of a heat sink integrated power module 20 according to Embodiment 1. The heat sink integrated power module 20 according to Embodiment 1 includes a heat sink 1, a fin base 2, an insulating sheet 3, wiring wires 4, a semiconductor element 5, solder 6, a metal conductor 7, a control terminal 8, a sealing resin 9, and a main terminal 10.

[0065] In addition, the heat sink 1 has a heat sink base 1b and a plurality of heat dissipation fins 1a. In addition, the power module 11 involved in the first embodiment is composed of an insulating sheet 3, a wiring conductor 4, a semiconductor element 5, a solder 6, a metal conductor 7, a control terminal 8, a packaging resin 9, and a main terminal 10. Therefore, the heat sink integrated power module 20 involved in the first embodiment is formed by joining the heat sink 1 and the power module 11 via the fin base 2. That is, the heat sink integrated power module 20 is a power module 11 and a heat sink 1 are integrated, and the plurality of heat dissipation fins 1a of the heat sink 1 are provided on the heat sink base 1b to dissipate the heat generated by the power module 11.

[0066] The heat sink integrated power module 20 has a heat sink 1 connected to the lower surface side of the power module 11, thereby improving the heat dissipation of the heat generated in the semiconductor element 5 of the power module 11. That is, the heat sink integrated power module 20 improves the heat dissipation of the heat generated in the power module 11 by allowing the heat generated in the semiconductor element 5 of the power module 11 to be dissipated from the heat sink 1. In addition, the heat sink integrated power module 20 is a grease-free power module that does not use thermal grease between the power module 11 and the heat sink 1. Therefore, compared with the case where thermal grease is used between the power module 11 and the heat sink 1, the heat sink integrated power module 20 further improves the heat dissipation characteristics of the heat generated in the power module 11 and has higher heat dissipation performance.

[0067] The heat sink 1 is a riveted heat sink in which the heat sink fins 1 a and the heat sink base 1 b are integrated by “riveting”.

[0068] The heat sink fin 1a is a thin plate-shaped heat sink having a rectangular shape. The heat sink fin 1a is made of a metal material with relatively high thermal conductivity so as to be able to dissipate heat generated by the semiconductor element 5 of the power module 11. In one example, the heat sink fin 1a is made of a metal material that is difficult to corrode, such as aluminum and an aluminum alloy. By using a rolled material of a metal material such as aluminum as described above for the heat sink fin 1a, both the processability of the heat sink fin 1a and the heat dissipation performance of the heat generated by the semiconductor element 5 can be achieved.

[0069] The plurality of heat dissipation fins 1a are inserted into fin insertion grooves (not shown) formed on one surface of the heat dissipation base 1b and fixed to the heat dissipation base 1b by caulking. The heat dissipation fins 1a are arranged with the fin base 2 sandwiching the heat dissipation base 1b.

[0070] The heat sink base 1b is a flat plate-shaped component having a rectangular shape in the in-plane direction of the heat sink base 1b, and is a component that serves as the base of the heat sink 1 by fixing a plurality of heat sink fins 1a. The heat sink base 1b is made of a metal material with relatively high thermal conductivity so that heat generated by the semiconductor element 5 of the power module 11 can be efficiently transferred to the heat sink fins 1a. In one example, the heat sink base 1b is made of a metal material that is difficult to corrode, such as aluminum and an aluminum alloy. The heat sink base 1b is manufactured by a processing method such as cutting, die casting, forging, and extrusion.

[0071] The fin base 2 is a flat plate-shaped component having a rectangular shape smaller than the heat sink base 1b, and is a connecting component that connects the power module 11 to the heat sink 1. The fin base 2 is made of a metal material with relatively high thermal conductivity in a manner that can efficiently conduct heat generated at the semiconductor element 5 of the power module 11 from the power module 11 to the heat sink 1. In one example, the fin base 2 is made of a metal material that is difficult to corrode, such as aluminum and aluminum alloy. The fin base 2 is manufactured by a processing method such as cutting, die casting, forging, and extrusion.

[0072] In addition, the materials of the heat sink fins 1a, the heat sink base 1b, and the fin base 2 are not limited to the above-mentioned aluminum-based materials, and may be other materials. That is, the combination of materials between the heat sink fins 1a, the heat sink base 1b, and the fin base 2 may also be a combination of materials different from the above. For example, from the perspective of heat dissipation capacity, by setting the heat sink fins 1a as a copper-based plate component having a higher thermal conductivity than the aluminum-based material, the heat dissipation capacity of the heat sink fins 1a is further improved compared to the case where the heat sink fins 1a are plate components made of aluminum-based materials.

[0073] In the case where the heat sink 1 is a riveted heat sink in which the heat sink fins 1a and the heat sink base 1b are integrated by riveting, there is no processing restriction on the aspect ratio when the heat sink is manufactured by die casting and extrusion, so the heat sink fins 1a can be freely designed, and the heat dissipation capacity of the heat sink 1 can be improved. However, the heat sink 1 is not limited to the riveted heat sink, and a heat sink manufactured by other processing methods can also be used.

[0074] Figure 5 FIG. 2 is a cross-sectional view of a heat sink integrated power module according to a first modification example provided with a heat sink 12 according to a first modification example according to the first embodiment. Figure 5 In, with Figure 4 The same components are denoted by the same reference numerals. In the heat sink 12 of the first modified example, the heat sink fins 1a and the heat sink base 1b are integrally manufactured by extrusion.

[0075] Figure 6 FIG. 2 is a cross-sectional view of a heat sink integrated power module according to a second modification example to which the heat sink 13 according to the second modification example is mounted according to the first embodiment. Figure 6 In, with Figure 4 The same components are denoted by the same reference numerals. In the heat sink 13 of the second modified example, the heat sink fins 1a and the heat sink base 1b are integrally manufactured by die casting.

[0076] In addition, in the heat sink integrated power module 20, a heat sink manufactured by cutting or forging may be used.

[0077] Figure 7 1 is a cross-sectional view of a heat sink integrated power module according to a third modified example of Embodiment 1. In the heat sink integrated power module according to the third modified example, a power module 11 and a heat sink 1 are connected by a bonding material 15 such as solder or an adhesive 16 .

[0078] exist Figures 5 to 7 In the structure shown, the effect of a grease-free power module capable of achieving high heat dissipation performance as described above can also be obtained.

[0079] The insulating sheet 3 insulates the structure encapsulated by the encapsulating resin 9 from the heat sink base 1 b and dissipates heat generated by the semiconductor element 5 to the heat sink base 1 b. The insulating sheet 3 has a heat dissipation property greater than or equal to that of the encapsulating resin 9 .

[0080] The wiring conductors 4 electrically connect the semiconductor elements 5 to each other, and also electrically connect the semiconductor elements 5 to the main terminals 10 .

[0081] The semiconductor element 5 is a semiconductor element for power control. An example of the semiconductor element 5 is a rectifier diode, a power transistor, a thyristor, or an IGBT (Insulated Gate Bipolar Transistor). The semiconductor element 5 exemplifies an element formed of silicon (Si) or an element formed of a wide bandgap semiconductor having a larger bandgap than silicon. An example of a wide bandgap semiconductor is silicon carbide (SiC), a gallium nitride material, or diamond. The semiconductor element 5 using a wide bandgap semiconductor has a high allowable current density and low power loss, and therefore, the heat sink integrated power module 20 and the power semiconductor device 100 can be miniaturized.

[0082] The solder 6 is a bonding material for bonding the semiconductor element 5 and the metal conductor 7. In addition, the bonding material for bonding the semiconductor element 5 and the metal conductor 7 is not limited to the solder 6.

[0083] The metal conductor 7 is a substrate on which the semiconductor element 5 is mounted, and dissipates heat generated by the semiconductor element 5 to the insulating sheet 3 .

[0084] The control terminal 8 and the main terminal 10 are connected to the semiconductor element 5 to supply power to the semiconductor element 5 or to transmit signals between the semiconductor element 5 and an external device.

[0085] The sealing resin 9 constitutes the frame of the power module 11. The sealing resin 9 is formed of a thermosetting resin such as epoxy resin, and ensures insulation between components arranged inside. The sealing resin 9 is, for example, transfer molding formed by transfer molding. However, the molding method of the sealing resin 9 is not limited to transfer molding.

[0086] Next, a method for manufacturing the heat sink integrated power module 20 configured as described above will be described.

[0087] First, the semiconductor element 5 is die-bonded to the metal conductor 7 using solder 6. Next, the semiconductor element 5 is wire-bonded and electrically connected to other semiconductor elements 5 through wiring wires 4. In addition, some semiconductor elements 5 are wire-bonded and electrically connected to the control terminal 8 or the main terminal 10 through wiring wires 4. Next, the insulating sheet 3 is temporarily attached to one surface of the fin base 2.

[0088] Then, the fin base 2 having an insulating sheet 3 temporarily attached to one surface, the metal conductor 7 to which the chip bonding of the semiconductor element 5 and the wire bonding of the wiring wire 4 are completed as described above, the control terminal 8 and the main terminal 10 are integrated by using a packaging resin 9, thereby producing an assembly in which the heat sink integrated power module 20 and the fin base 2 are assembled.

[0089] Furthermore, the fin base concavo-convex part 2u provided on the other side of the fin base 2 and the heat sink base concavo-convex part 1bu provided on one side of the heat sink base 1b are fitted and fixed by stamping, so that the assembly and the heat sink base 1b are integrated. Figure 1 A heat sink integrated power module 20 is shown.

[0090] In the manufacturing method of the above-mentioned heat sink integrated power module 20, the fin base 2 and the heat sink base 1b are integrated by stamping, so there is a possibility of damage to the semiconductor element 5 during stamping, cracks in the semiconductor element 5, changes in the characteristics of the semiconductor element 5, cracks in the encapsulation resin 9, a decrease in the withstand voltage of the insulating sheet 3, and peeling between the components of the heat sink integrated power module 20. Therefore, it is preferable to make the stamping load when integrating the assembly and the heat sink base 1b as low as possible.

[0091] Figure 8 1 is a plan view showing the outer frame 30 of the power semiconductor device 100 according to the first embodiment. Fig. 9 is a cross-sectional view showing the outer frame 30 of the power semiconductor device 100 according to the first embodiment, taken along Figure 8 Cross-sectional view along line IX-IX.

[0092] The outer frame 30 supports the housing 40 on which the heat sink integrated power module 20 is mounted, and also forms an air path for the airflow 200 delivered from the air supply system. The outer frame 30 has a rectangular box shape, and the box shape is formed by two side portions 32 standing vertically upward from both ends of the bottom portion 31 of the outer frame 30 in the left and right directions, and the upper side, the front side, and the back side are open. That is, the outer frame 30 is as shown in FIG. Figure 2 , Figure 3 , Figure 8 and Fig. 9 As shown, the cross-section along the left-right direction has a U-shaped cross-section, and the surface is closed except for the upper surface side, the front side and the back side of the mounting housing 40. In addition, the outer frame 30 does not need to be a shape that is necessarily closed except for the upper surface side, the front side and the back side, and an opening portion can be formed as needed.

[0093] In addition, the "U-shape" is not just a shape without corners. Figure 2 , Figure 3 , Figure 8 and Fig. 9 That is, the "U-shape" includes a shape in which a curved portion is continuously formed by a curve and a shape in which a curved portion is formed by a bend.

[0094] In the outer frame 30, the internal space surrounded by the bottom portion 31 and the two side portions 32 constitutes an air path for the wind delivered from the air supply system. The open front side of the outer frame 30 is set as an inlet for the wind delivered from the air supply system. In addition, the open back side of the outer frame 30 is set as an outlet for the wind that flows from the inlet into the inside of the outer frame 30 and flows inside the outer frame 30. The inlet for the wind in the outer frame 30 can also be called the inlet for the wind in the holding portion 60. The outlet for the wind in the outer frame 30 can also be called the outlet for the wind in the holding portion 60.

[0095] The outer frame 30 supports the weight of the housing 40, the heat sink integrated power module 20, and the components connected to the heat sink integrated power module 20, and is therefore made of a material having a rigidity capable of supporting the above-mentioned structural parts. In addition, from the perspective of the product weight of the power semiconductor device 100, the outer frame 30 is preferably as thin and lightweight as possible within the range of having a rigidity capable of supporting the above-mentioned structural parts. For example, a plated steel plate can simultaneously achieve rigidity capable of supporting the above-mentioned structural parts, thin-walling, and lightweight, and is a preferred material for the outer frame 30. In addition, the outer frame 30 can also be made of materials other than plated steel plates.

[0096] The housing 40 is a mounting plate for the heat sink integrated power module 20 to be mounted and carried. Figure 2 and Figure 3 As shown, it is placed on two side surfaces 32 of the outer frame 30. The in-plane direction of the case 40, the in-plane direction of the bottom surface 31 of the outer frame 30, and the in-plane direction of the heat sink base 1b of the heat sink integrated power module 20 are parallel.

[0097] Fig.10 FIG. 4 is a top view showing the casing 40 of the power semiconductor device 100 according to the first embodiment. Fig.10 As shown, the housing 40 is in a plate shape and has a plurality of openings 41 for inserting a portion of the heat sink integrated power module 20. The housing 40 has a plurality of openings 41 corresponding to the size of the heat sink fins 1a according to the number of heat sink integrated power modules 20 to be mounted. Fig.10 In the illustrated case 40 , six openings 41 are formed in order to mount six heat sink-integrated power modules 20 .

[0098] The opening 41 is rectangular in the in-plane direction of the housing 40. In addition, the shape of the opening 41 is not limited to a rectangle, as long as it is formed to match the shape of the heat sink integrated power module 20. The opening 41 has a size in the in-plane direction of the housing 40 that allows the entire heat sink fin 1a of the heat sink integrated power module 20 to be inserted, and has a size that the outer peripheral edge 1bp of the heat sink base 1b cannot be inserted through. That is, the opening 41 has a size and shape in the in-plane direction of the housing 40 that allows the entire heat sink fin 1a of the heat sink integrated power module 20 to be inserted, but the heat sink base 1b cannot be inserted through. The relationship between the sizes of the opening 41, the heat sink integrated power module 20, the heat sink base 1b, and the heat sink fin 1a will be described later.

[0099] The housing 40 supports the weight of the heat sink integrated power module 20 and the components connected to the heat sink integrated power module 20, and therefore is made of a material having a rigidity capable of supporting the above-mentioned structural parts. In addition, from the perspective of the product weight of the power semiconductor device 100, the housing 40 is preferably as thin and lightweight as possible within the range of having a rigidity capable of supporting the above-mentioned structural parts. For example, a plated steel plate can simultaneously achieve rigidity capable of supporting the above-mentioned structural parts, thin-walling, and lightweight, and is a preferred material for the housing 40. In addition, the housing 40 can also be made of materials other than plated steel plates.

[0100] like Figure 2As shown, the heat dissipation fins 1a of the heat sink 1 of the heat sink integrated power module 20 are inserted from the outside of the holding portion 60 into the plurality of openings 41. With the heat dissipation fins 1a housed in the holding portion 60, the outer peripheral edge 1bp of the heat sink base 1b is placed in an adjacent region 413 adjacent to the openings 41. The housing 40 is supported by the free ends of the U-shaped outer frame 30, i.e., the ends of the two side portions 32, to form one surface of the holding portion 60.

[0101] Thus, the housing 40 holds the heat sink base 1b in the adjacent region 413, thereby holding the heat sink integrated power module 20. That is, for the plurality of heat sink integrated power modules 20, the plurality of heat dissipation fins 1a are inserted from the opening 41 into the interior of the holding portion 60, and in the in-plane direction of the heat sink base 1b, the outer peripheral edge portion 1bp of the heat sink base 1b is supported on the adjacent region 413 adjacent to the opening 41 at the housing 40 constituting one surface of the holding portion 60.

[0102] Therefore, the holding portion 60 composed of the outer frame 30 having the above-mentioned structure and the shell 40 has a box shape, and the wind inlet and wind outlet of the holding portion are arranged opposite to each other, and a plurality of openings 41 are formed on a surface of the shell 40 that connects the inlet and the aforementioned outlet.

[0103] The structural support portion 50 is provided inside the holding portion 60, receives a load from the housing 40 constituting one surface of the holding portion 60 toward the inside of the holding portion 60, and supports the housing 40 and the heat sink integrated power module 20 mounted on the housing 40. The structural support portion 50 is arranged at positions corresponding to the heat sink bases 1b of the adjacent heat sink integrated power modules 20 in the width direction of the holding portion 60. The width direction of the holding portion 60 is a direction orthogonal to the direction from the inlet of the holding portion 60 toward the outlet of the holding portion 60, and is a left-right direction. The direction from the inlet of the holding portion 60 toward the outlet of the holding portion 60 corresponds to the Y direction. The structural support portion 50 extends continuously in the direction from the inlet toward the outlet in the region from the inlet of the holding portion 60 to the outlet of the holding portion 60. The structural support portion 50 is fixed to the outer frame 30, and the upper surface is in contact with the housing 40. The cross section of the structural support portion 50 perpendicular to the longitudinal direction is set to be a rectangular rod. In addition, the shape of the structure supporting portion 50 is not limited as long as the function of the structure supporting portion 50 can be exerted.

[0104] Next, a method for manufacturing the power semiconductor device 100 configured as described above will be described. Figures 11 to 18 This is a diagram schematically showing an example of the flow of the method for manufacturing the power semiconductor device 100 according to the first embodiment. Fig.19This is a flowchart showing the flow of the method for manufacturing the power semiconductor device 100 according to the first embodiment.

[0105] First, in step S110 , the structure support portion 50 is mounted and fixed to the outer frame 30 . Fig.11 It is a first plan view schematically showing an example of the flow of the method for manufacturing the power semiconductor device 100 according to the first embodiment. Fig.12 This is a first cross-sectional view schematically showing an example of the flow of the method for manufacturing the power semiconductor device 100 according to the first embodiment. Fig.12 is along Fig.11 Cross-sectional view along line XII-XII in FIG.

[0106] Specifically, if Fig.11 and Fig.12 As shown, the structural support portion 50 is mounted and fixed to the inner surface 31a of the bottom portion 31 of the outer frame 30. The structural support portion 50 is mounted to the central portion of the inner surface 31a of the bottom portion 31 in the left-right direction in a state where the cross section perpendicular to the longitudinal direction is set perpendicular to the inner surface 31a of the bottom portion 31 of the outer frame 30 and the longitudinal direction is parallel to the two side portions 32 of the outer frame 30. The fixing method of the structural support portion 50 to the outer frame 30 is illustrated as screw fastening. In addition, the fixing method of the structural support portion 50 to the outer frame 30 is not limited to screw fastening. For example, the structural support portion 50 may also be fixed to the inner surface 31a of the bottom portion 31 of the outer frame 30 by welding.

[0107] Next, in step S120 , the housing 40 is screwed to the outer frame 30 using the housing fixing screws 71 . Fig.13 It is a second plan view schematically showing an example of the flow of the method for manufacturing the power semiconductor device 100 according to the first embodiment. Fig.14 This is a second cross-sectional view schematically showing an example of the flow of the method for manufacturing the power semiconductor device 100 according to the first embodiment. Fig.15 It is a third cross-sectional view schematically showing an example of the flow of the method for manufacturing the power semiconductor device 100 according to the first embodiment. Fig.16 It is a third plan view schematically showing an example of the flow of the method for manufacturing the power semiconductor device 100 according to the first embodiment. Fig.17 It is a fourth plan view schematically showing an example of the flow of the method for manufacturing the power semiconductor device 100 according to the first embodiment. Fig.14 is along Fig.13 Cross-sectional view along line XIIII-XIIII. Fig.15 is along Fig.13 Cross-sectional view along line XV-XV in FIG.

[0108] Specifically, if Figures 13 to 15 As shown, the housing 40 is placed on the outer frame 30. At this time, the end region 415 of the housing 40 in the left-right direction is placed on the side surface 32 of the outer frame 30. In addition, the central region 414 of the housing 40 in the left-right direction is placed on the structural support portion 50. In the housing 40, the region between the short side 411 of the opening in the left-right direction and the long side 416 of the housing is set as the end region 415. In addition, in the housing 40, the region corresponding to the position between the short sides 411 of the adjacent openings in the left-right direction is set as the central region 414.

[0109] Then, if Fig.16 As shown, at both ends in the left and right directions, the housing fixing screws 71 are screwed from above the end region 415 of the housing 40, so that the housing 40 is fixed to the outer frame 30 in the end region 415 by screwing. Fig.17 As shown, in the central portion in the left-right direction, the housing 40 may be screwed by the housing fixing screws 71 from above the central region 414 , so that the housing 40 is fixed to the structural support portion 50 by screwing in the central region 414 .

[0110] In the outer frame 30, screw holes (not shown) are pre-formed at the locations where the screws 71 for fixing the shell are screwed in. The locations where the screws 71 for fixing the shell are screwed in the outer frame 30 are the locations on the upper surfaces of the two side surfaces 32 of the outer frame 30. In addition, in the shell 40, screw holes (not shown) or through holes (not shown) are pre-formed at the locations where the screws 71 for fixing the shell are screwed in. The locations where the screws 71 for fixing the shell are screwed in the shell 40 are the locations in the end area 415 corresponding to the screw holes of the outer frame 30. In addition, screw holes (not shown) are pre-formed at the locations where the screws 71 for fixing the shell are screwed in the structural support portion 50. The locations where the screws 71 for fixing the shell are screwed in the structural support portion 50 are the locations in the upper surface of the structural support portion 50 fixed to the outer frame 30 corresponding to the screw holes or through holes in the central area 414 of the shell 40.

[0111] The shell 40 is fixed to the outer frame 30 by screw fastening in the end area 415, and the shell 40 is fixed to the structural support part 50 by screw fastening in the central area 414, so that the shell 40 is more firmly fixed relative to other structural parts in the retaining part 60, and the vibration resistance of the retaining part 60 and the power semiconductor device 100 becomes better.

[0112] Next, in step S130 , the heat sink integrated power module 20 is mounted in the case 40 . Specifically, the heat dissipation fins 1 a of the heat sink integrated power module 20 are inserted from above the opening 41 of the case 40 , and the heat sink integrated power module 20 is mounted in the case 40 .

[0113] Here, if Figure 2 As shown, the heat sink integrated power module 20 places the outer peripheral edge 1bp of the heat sink base 1b in the adjacent region 413 adjacent to the opening 41 in a state where the heat sink fins 1a are accommodated in the holding portion 60. Thus, the heat sink base 1b is supported at the adjacent region 413 of the housing 40, so that the heat sink integrated power module 20 is held by the housing 40. In addition, the heat sink integrated power module 20 is mounted on the housing 40 in a manner such that the position of the center of the opening 41 of the housing 40 and the position of the center of the heat sink base 1b are set to the same position in the in-plane direction of the housing 40. In addition, the heat sink integrated power module 20 is mounted on the housing 40 in a manner such that the depth direction of the plurality of heat sink fins 1a in the heat sink 1 is set to be parallel to the short side 411 of the opening, and the direction in which the plurality of heat sink fins 1a are arranged at the heat sink 1, that is, the arrangement direction of the heat sink fins 1a is set to be parallel to the long side 412 of the opening.

[0114] Next, in step S140 , the heat sink integrated power module 20 is fixed to the housing 40 by screw fastening. Fig.18 It is a fifth plan view schematically showing an example of the flow of the method for manufacturing the power semiconductor device 100 according to the first embodiment.

[0115] Specifically, if Fig.18 As shown, the heat sink base 1b of the heat sink integrated power module 20 is fixed to the housing 40 by screwing the power module fixing screws 72 in the peripheral areas of the four corners of the heat sink base 1b in the in-plane direction of the heat sink base 1b from above the heat sink base 1b, so that the heat sink base 1b is fixed to the housing 40 in the peripheral areas of the corners by screwing. Thus, the heat sink integrated power module 20 is fixed to the housing 40 in the peripheral areas of the corners of the heat sink base 1b by screwing.

[0116] In the housing 40, screw holes (not shown) are pre-formed at locations where the power module fixing screws 72 are screwed in. The locations where the power module fixing screws 72 are screwed in the housing 40 are positions on the side of the opening 41 in the end region 415 and positions on the side of the opening 41 in the central region 414. In the heat sink base 1b, screw holes (not shown) or through holes (not shown) are pre-formed at locations where the power module fixing screws 72 are screwed in. The locations where the power module fixing screws 72 are screwed in the heat sink base 1b are positions corresponding to the screw holes in the end region 415 of the housing 40. Thus, as Fig.18 As shown, the heat sink integrated power module 20 according to the first embodiment is manufactured.

[0117] Next, the relationship between the dimensions of the opening 41 formed in the case 40 and the heat sink base 1 b of the heat sink integrated power module 20 will be described. Fig. 20 This is a first schematic diagram for explaining an example of the relationship between the dimensions of the opening 41 of the case 40 of the power semiconductor device 100 according to the first embodiment and the heat sink base 1b of the heat sink integrated power module 20. Fig. 20 In FIG. 4 , in a plan view of the case 40 , the position of the heat sink base 1 b of the heat sink integrated power module 20 mounted on the case 40 is indicated by a dotted line.

[0118] In the power semiconductor device 100, in order to fix the heat sink integrated power module 20 and the housing 40 by screwing the heat sink base 1b and the housing 40, as shown in FIG. Fig. 20 As shown, in the in-plane direction of the housing 40 , the conditions shown in the following equations (1) to (4) are satisfied. The opening 41 in the following equations (1) to (4) is the opening 41 of the housing 40 .

[0119] The length of the first short side 411a of the opening is less than the length of the first short side 1bs1 of the heat sink base.

[0120] ···(1)

[0121] The length of the second short side 411b of the opening is less than the length of the second short side 1bs2 of the heat sink base.

[0122] ···(2)

[0123] The length of the first long side 412a of the opening is less than the length of the first long side 1b11 of the heat sink base.

[0124] ···(3)

[0125] The length of the second long side 412b of the opening is less than the length of the second long side 1b12 of the heat sink base.

[0126] ···(4)

[0127] By satisfying the conditions shown in the above formulas (1) to (4), it is possible to Fig. 20 As shown, the heat sink base 1 b is screw-fastened to the case 40 by power module fixing screws 72 in four regions between corners of the heat sink base 1 b and corners of the opening 41 in the in-plane direction of the heat sink base 1 b.

[0128] Fig.21 This is a second schematic diagram for explaining an example of the relationship between the dimensions of the opening 41 of the case 40 of the power semiconductor device 100 according to the first embodiment and the heat sink base 1b of the heat sink integrated power module 20. Fig.21 In the top view of the housing 40, the position of the heat sink base 1b of the heat sink integrated power module 20 mounted on the housing 40 is indicated by a dotted line. In the power semiconductor device 100, when the conditions shown in the following equations (5) and (6) are satisfied in the in-plane direction of the housing 40, the heat sink integrated power module 20 can be fixed to the housing 40 by fastening the heat sink base 1b and the housing 40 with screws.

[0129] The length of the first long side 412a of the opening is less than the length of the first long side 1bl1 of the heat sink base. (5)

[0130] The length of the second long side 412b of the opening is less than the length of the second long side 1bl2 of the heat sink base. (6)

[0131] By satisfying the conditions shown in the above equations (5) and (6), the heat sink base 1b can be screwed to the housing 40 by the power module fixing screws 72 in the peripheral areas of the four corners of the heat sink base 1b in the in-plane direction of the heat sink base 1b. Fig.21 As shown, the power module fixing screws 72 can be screwed in two areas between the first short side 411a of the opening and the first short side 1bs1 of the radiator base and in two areas between the second short side 411b of the opening and the second short side 1bs2 of the radiator base in the peripheral areas of the four corners of the radiator base 1b.

[0132] Fig. 22 This is a third schematic diagram for explaining an example of the relationship between the dimensions of the opening 41 of the case 40 of the power semiconductor device 100 according to the first embodiment and the heat sink base 1b of the heat sink integrated power module 20. Fig. 22In the top view of the housing 40, the position of the heat sink base 1b of the heat sink integrated power module 20 mounted on the housing 40 is indicated by a dotted line. In the power semiconductor device 100, when the conditions shown in the following equations (7) and (8) are satisfied in the in-plane direction of the housing 40, the heat sink integrated power module 20 can be fixed to the housing 40 by fastening the heat sink base 1b and the housing 40 with screws.

[0133] The length of the first short side 411a of the opening is less than the length of the first short side 1bs1 of the heat sink base. (7)

[0134] The length of the first long side 412a of the opening is less than the length of the first long side 1bl1 of the heat sink base. (8)

[0135] By satisfying the conditions shown in the above equations (7) and (8), the heat sink base 1b can be screwed to the housing 40 by the power module fixing screws 72 in the peripheral areas of the four corners of the heat sink base 1b in the in-plane direction of the heat sink base 1b. Fig. 22 As shown, the power module fixing screws 72 can be screwed in two areas between the corners of the radiator base 1b and the corners of the opening 41 in the peripheral areas of the three corners of the radiator base 1b and in one area between the second short side 411b of the opening and the second short side 1bs2 of the radiator base.

[0136] Regarding the power semiconductor device 100, if it is considered that the heat sink base 1b and the housing 40 of the heat sink integrated power module 20 may be warped during manufacturing, and the housing bears the load of multiple components connected to the heat sink integrated power module 20, then from the perspective of the vibration resistance of the power semiconductor device 100 after assembling multiple components, the vibration resistance of the power semiconductor device 100 is more than 100%. Fig. 22 Example of screw fastening structure shown Fig.21 Example of screw fastening structure shown Fig. 20 The order of the screw fastening construction example shown becomes good.

[0137] Since the heat dissipation fins 1 a of the heat sink integrated power module 20 are inserted into the housing 40 , the condition represented by the following formula (9) is satisfied in the depth direction, that is, the wind inflow direction.

[0138] The length of the heat dissipation fin 1a in the depth direction is less than the length of the short side 411 of the opening... (9)

[0139] Furthermore, since the heat dissipation fins 1 a of the heat sink integrated power module 20 are inserted into the housing 40 , the condition represented by the following formula (10) is satisfied in the left-right direction, that is, the width direction of the power semiconductor device 100 .

[0140] The distance from the heat dissipation fin 1a at the left end to the heat dissipation fin 1a at the right end is less than the length of the long side 412 of the opening... (10)

[0141] Next, effects of the structure of the above-described power semiconductor device 100 will be described. Fig.23 It is a first cross-sectional view showing a method for manufacturing a power semiconductor device according to a comparative example of the first embodiment. Fig.24 2 is a second cross-sectional view showing a method for manufacturing a power semiconductor device according to a comparative example of the first embodiment. Fig.23 and Fig.24 , a cross section of a portion where the power module fixing screw 72 is screwed is shown. The power semiconductor device of the comparative example has the same structure as the power semiconductor device 100 except that the holding portion 60 does not have the structural support portion 50. Fig.23 In FIG. 1 , the same components as those of the power semiconductor device 100 according to the first embodiment are denoted by the same reference numerals as those of the power semiconductor device 100 .

[0142] As for the power semiconductor device of the comparative example, Fig.23 The power module fixing screws 72 are screwed in the direction indicated by the arrow in the figure, and the heat sink base 1b and the housing 40 are fixed with the power module fixing screws 72. In this case, if the power module fixing screws 72 are screwed in the central area 414 of the housing 40, the load of the screwing of the power module fixing screws 72 is applied to the housing 40 via the heat sink base 1b. Therefore, when the structural support portion 50 is not provided in the holding portion 60, the load applied by the screwing of the power module fixing screws 72 may be as follows: Fig.24 As shown, the case 40 is bent. If the case 40 is bent, the heat sink integrated power module 20 may not be fixed to the case 40 .

[0143] In addition, even if the heat sink integrated power module 20 can be fixed to the housing 40 when the housing 40 is bent, the vibration resistance of the product completed by installing other components on the heat sink integrated power module 20 is also deteriorated. Due to repeated fatigue caused by the vibration applied to the comparative power semiconductor device, the fastening parts of screws such as the housing fixing screws 71 and the power module fixing screws 72 may be damaged, and the fastening parts of the screws and the structural parts around the fastening parts of the screws may be damaged.

[0144] In order to solve the above problem, it is necessary to increase the rigidity of the case 40, specifically, to increase the thickness of the case 40. When the thickness of the case 40 is increased, the weight of the power semiconductor device increases, which hinders the weight reduction of the power semiconductor device.

[0145] On the other hand, in the power semiconductor device 100 according to the first embodiment, the structural support portion 50 is provided in the region of the holding portion 60 corresponding to the central region 414 of the housing 40. That is, in the power semiconductor device 100, the structural support portion 50 is mounted and fixed to the inner surface 31a of the bottom portion 31 of the outer frame 30. Thus, in the power semiconductor device 100, the load when the heat sink integrated power module 20 is fixed to the housing 40 by screwing the power module fixing screws 72 at the central region 414 of the housing 40 can be borne by the structural support portion 50. In addition, in the product completed by mounting other components on the heat sink integrated power module 20, the load when vibration is applied to the power semiconductor device 100 can also be borne by the structural support portion 50. Therefore, the productivity of the power semiconductor device 100 is improved, and a power semiconductor device with high vibration resistance can be realized.

[0146] Next, the effect of the heat dissipation performance of the power semiconductor device 100 will be described. Fig.25 This is a schematic diagram for explaining the flow of wind inside the holding portion 60 of the power semiconductor device 100 according to the first embodiment. Fig.26 Schematic diagram for explaining the flow of wind inside the holding portion 60 of the power semiconductor device of the comparative example according to the first embodiment. Fig.25 and Fig.26 , a state observed through a part of the power semiconductor device is shown. As for the power semiconductor device of the comparative example, similarly to the power semiconductor device 100, the airflow 200 delivered from the air supply system to the power semiconductor device 100 flows around the heat dissipation fins 1a of the heat sink 1 inside the holding portion 60, thereby promoting the heat dissipation of the heat generated at the semiconductor element 5 of the power module 11 at the heat dissipation fins 1a.

[0147] However, in the power semiconductor device of the comparative example, since the structural support portion 50 is not provided in the area corresponding to the central area 414 of the housing 40, Fig.26As shown, a first airflow vector 211 with a relatively large air volume that does not contribute to heat dissipation at the heat dissipation fins 1a is generated in an area corresponding to the central area 414 of the housing 40. Furthermore, by generating the first airflow vector 211, the airflow inside the holder 60 is disturbed, and a second airflow vector 212 that does not contribute to heat dissipation at the heat dissipation fins 1a is generated in an area corresponding to the central area 414 of the housing 40 inside the holder 60 and an area corresponding to the end area 415 of the housing 40 inside the holder 60. In this case, the flow velocity of the airflow flowing between adjacent heat dissipation fins 1a decreases, and the thermal conductivity of the air from the heat dissipation fins 1a between the heat dissipation fins 1a to the air around the heat dissipation fins 1a decreases, and the heat dissipation performance of the radiator 1 decreases.

[0148] On the other hand, for the power semiconductor device 100 in which the structural support portion 50 is provided in the area corresponding to the central area 414 of the housing 40, as shown in FIG. Fig.25 As shown, the first airflow vector 211 and the second airflow vector 212 that do not contribute to the heat dissipation at the heat dissipation fin 1a are not generated. Therefore, in the power semiconductor device 100, the rectified airflow 200 flows between the adjacent heat dissipation fins 1a, so that the heat dissipation performance of the heat dissipation fins 1a as designed can be obtained.

[0149] The power semiconductor device 100 described above uses a plurality of heat sink integrated power modules 20 having high heat dissipation performance, thereby achieving a power semiconductor device with high power capacity with good productivity, compared with a power semiconductor device having a structure in which a plurality of power modules are fixed to a single heat sink using thermal grease and a power semiconductor device having a structure in which a single-chip heat sink and a single power module are fixed using thermal grease. In addition, in the power semiconductor device 100, when the heat sink integrated power module 20 is replaced, since thermal grease is not used, it is not necessary to remove and reposition the thermal grease, and the heat sink integrated power module 20 can be replaced only by removing the screws, which improves productivity and maintainability.

[0150] Next, a method of fixing the structure support portion 50 to the outer frame 30 will be described. Fig. 27 This is a first cross-sectional view showing an example of a method of fixing the structure support portion 50 of the power semiconductor device 100 according to the first embodiment to the outer frame 30 . Fig.28 This is a second cross-sectional view showing an example of a method of fixing the structure support portion 50 of the power semiconductor device 100 according to the first embodiment to the outer frame 30 .

[0151] exist Fig. 27In the example shown, the structural support portion 50 is fixed to the inner surface 31a of the bottom surface portion 31 of the outer frame 30 by a welding portion 73. Fig.28 In the example shown, the structural support portion 50 is fixed to the inner surface 31a of the bottom surface portion 31 of the outer frame 30 by means of the structural support portion fixing screws 74. In addition, the method of fixing the structural support portion 50 to the outer frame 30 is not limited to the above example, and any method can be applied as long as it is a method that can fix the structural support portion 50 to the outer frame 30, such as fixing the structural support portion 50 to the outer frame 30 by an adhesive.

[0152] exist Fig.28 In the example shown, a cross section is shown at a location where the structural support portion fixing screw 74 is screwed. Fig.28 In the example shown, the screw fastening area 50a is provided in a portion of the longitudinal direction of the structural support portion 50. The screw fastening area 50a is an area for fixing the structural support portion 50 to the inner surface 31a of the bottom surface portion 31 of the outer frame 30 by the structural support portion fixing screws 74.

[0153] The screw fastening area 50a can be set at any position in the length direction of the structural support part 50 as long as it can be fixed to the outer frame 30 by the structural support part fixing screws 74. In addition, as for the screw fastening area 50a, as long as the structural support part 50 can be fixed to the outer frame 30 by the structural support part fixing screws 74, any number of screw fastening areas 50a can be set. For example, the screw fastening area 50a can be set at one position in the center of the structural support part 50 in the length direction, and can also be set at two positions on both end sides of the structural support part 50 in the length direction.

[0154] The height of the screw fastening region 50a may be any height as long as the structure support portion 50 can be fixed to the outer frame 30 by the structure support portion fixing screws 74. Fig.28 In the example shown, the height of the screw fastening area 50a is set to 1 / 2 of the height of the area other than the screw fastening area 50a at the structural support portion 50. Alternatively, the height of the screw fastening area 50a may be set to the same height as the height of the area other than the screw fastening area 50a at the structural support portion 50. In this case, the central area 414 of the housing 40 is not provided in the area corresponding to the upper portion of the screw fastening area 50a.

[0155] Fig.29 This is a third cross-sectional view showing an example of a method of fixing the structure support portion 50 of the power semiconductor device 100 according to the first embodiment to the outer frame 30 . Fig.30This is a fourth cross-sectional view showing an example of a method of fixing the structure support portion 50 of the power semiconductor device 100 according to the first embodiment to the outer frame 30 . Fig.29 is with Fig. 27 In the corresponding figure, the structural support portion 50 is fixed to the inner surface 31 a of the bottom surface portion 31 of the outer frame 30 by the welding portion 73 . Fig.30 is with Fig.28 In the corresponding figure, the structure support portion 50 is fixed to the inner surface 31 a of the bottom surface portion 31 of the outer frame 30 by the structure support portion fixing screws 74 .

[0156] If the dimensional fluctuation and assembly tolerance of each component constituting the holding portion 60 are taken into consideration, Fig.29 and Fig.30 As shown, the central region 414 of the housing 40 may not contact the upper surface of the structural support portion 50, and a gap 80 may be generated between the central region 414 of the housing 40 and the upper surface of the structural support portion 50. In this case, when the heat sink integrated power module 20 is fixed to the housing 40 using the power module fixing screws 72, the housing 40 is deformed by the screw tightening of the power module fixing screws 72, and the central region 414 of the housing 40 contacts the upper surface of the structural support portion 50. In addition, since the central region 414 of the housing 40 contacts the upper surface of the structural support portion 50, the load when the heat sink integrated power module 20 is fixed to the housing 40 can be borne by the structural support portion 50.

[0157] Therefore, if Fig.29 As shown, even when a gap 80 is generated between the central area 414 of the housing 40 and the upper surface of the structural support portion 50, the structural support portion 50 can be provided on the retaining portion 60, thereby reducing the deformation of the housing 40 when the screws 72 for fixing the power module are screwed. As a result, the power semiconductor device 100 can suppress the deflection of the housing 40 when the screws 72 for fixing the power module are screwed, and can reduce the occurrence rate of defects when the heat sink integrated power module 20 is fixed to the housing 40, thereby improving productivity. In addition, with respect to the vibration resistance of the product completed by installing other components on the heat sink integrated power module 20, it is also possible to suppress the deformation of the housing 40 when vibration is applied to the power semiconductor device 100, or control the deformation of the housing 40. Therefore, the vibration resistance of the product is improved.

[0158] As described above, the power semiconductor device 100 can obtain the same effect as the case where there is no gap 80 between the central area 414 of the shell 40 and the upper surface of the structural support part 50 even when the shell 40 and the structural support part 50 are not in contact, that is, when there is a gap 80 between the central area 414 of the shell 40 and the upper surface of the structural support part 50.

[0159] In the above description, the structure of the power semiconductor device 100 is described in which the structure support portion 50 is fixed to the outer frame 30 and the case 40 is fixed to the outer frame 30 . However, even when the structure support portion 50 is fixed to the case 40 , the same effects as described above can be obtained. Fig.31 This is a first cross-sectional view showing an example of a method of fixing the structure support portion 50 of the power semiconductor device 100 according to the first embodiment to the case 40 . Fig.32 This is a second cross-sectional view showing an example of a method of fixing the structure support portion 50 of the power semiconductor device 100 according to the first embodiment to the case 40 .

[0160] exist Fig.31 In the example shown, the upper surface of the structural support portion 50 is fixed to the central region 414 of the housing 40 by the welding portion 75, and the lower surface is in contact with the inner surface 31a of the bottom portion 31 of the outer frame 30. Fig.32 In the example shown, the structural support portion 50 is fixed to the central region 414 of the housing 40 by means of the structural support portion fixing screws 76, and the lower surface is in contact with the inner surface 31a of the bottom surface portion 31 of the outer frame 30. In addition, the method of fixing the structural support portion 50 to the housing 40 is not limited to the above example, and any method can be applied as long as it is a method that can fix the structural support portion 50 to the housing 40, such as fixing the structural support portion 50 to the housing 40 by an adhesive.

[0161] Fig.33 This is a flowchart showing the flow of another method for manufacturing the power semiconductor device 100 according to Embodiment 1. Here, a method for manufacturing the power semiconductor device 100 in a case where the structure support portion 50 is fixed to the case 40 will be described.

[0162] First, in step S210, the structure support portion 50 is mounted and fixed to the housing 40. The structure support portion 50 is fixed to the housing 40 by the welding portion 75 or the structure support portion fixing screw 76 as described above.

[0163] Next, in step S220 , similarly to step S120 , the housing 40 is screwed to the outer frame 30 using the housing fixing screws 71 .

[0164] Next, in step S230 , the heat sink integrated power module 20 is mounted on the housing 40 in the same manner as in step S130 .

[0165] Next, in step S240 , similarly to step S140 , the heat sink integrated power module 20 is fixed to the housing 40 by screw fastening.

[0166] Fig.34 This is a first cross-sectional view showing the structure of the power semiconductor device 100 when the structure support portion 77 with an elastic function is applied to the power semiconductor device 100 according to the first embodiment. Fig.35 2 is a second cross-sectional view showing the structure of the power semiconductor device 100 in which the structure support portion 77 with elastic function is applied to the power semiconductor device 100 according to the first embodiment. In order to fix the housing 40 and the structure support portion 50 in a state where the housing 40 and the structure support portion 50 are reliably connected, as shown in FIG. Fig.34 and Fig.35 As shown, it is also possible to use a structural support 77 with an elastic function.

[0167] The structural support portion 77 with an elastic function is a structural support portion having elasticity. Therefore, even if the dimensional fluctuation or assembly tolerance of each component constituting the retaining portion 60 is generated during the manufacturing process by using the structural support portion 77 with an elastic function in order to fix the housing 40 and the structural support portion 50, the dimensional fluctuation and assembly tolerance of each component during the manufacturing process are absorbed by the elasticity of the structural support portion 77 with an elastic function. As a result, the power semiconductor device 100 can fix the housing 40 and the structural support portion 50 in a state where the housing 40 and the structural support portion 50 are reliably connected. The power semiconductor device 100 can further stably improve the vibration resistance by using the structural support portion 77 with an elastic function.

[0168] exist Fig.34 and Fig.35 In the example shown, the structural support portion 77 with elastic function is divided into two divided parts, namely, a first divided structural support portion 77a1 and a second divided structural support portion 77a2, and has a structure in which a coil spring 77b is inserted between the first divided structural support portion 77a1 and the second divided structural support portion 77a2. The first divided structural support portion 77a1 is arranged on the central area 414 side of the housing 40 in the height direction. The second divided structural support portion 77a2 is arranged on the bottom surface portion 31 side of the outer frame 30 in the height direction.

[0169] In addition, Fig.34 In the example shown, in the elastic structure support portion 77, the second split structure support portion 77a2 disposed on the bottom portion 31 side of the outer frame 30 in the height direction is fixed to the inner surface 31a of the bottom portion 31 of the outer frame 30 by the welding portion 73. Fig.35 In the example shown, with respect to the structural support portion 77 with an elastic function, the second divided structural support portion 77a2 arranged on the side of the bottom portion 31 of the outer frame 30 in the height direction is fixed to the inner surface 31a of the bottom portion 31 of the outer frame 30 by means of the structural support portion fixing screws 74.

[0170] exist Fig.35 In the example shown, a cross section is shown at a location where the structural support portion fixing screw 74 is screwed. Fig.35 In the example shown, in the second split structural support portion 77a2, the screw fastening region 77c is provided in a part of the region in the length direction of the second split structural support portion 77a2. The length direction of the second split structural support portion 77a2 can also be referred to as the length direction of the structural support portion 77 with elastic function. The screw fastening region 77c is a region for fixing the second split structural support portion 77a2 to the inner surface 31a of the bottom surface portion 31 of the outer frame 30 by means of the structural support portion fixing screw 74. In the height direction, the coil spring 77b and the first split structural support portion 77a1 are not arranged above the screw fastening region 77c.

[0171] The screw fastening area 77c can be set at any position in the length direction of the second split structural support portion 77a2 as long as it is a position where the second split structural support portion 77a2 can be fixed to the outer frame 30 by the structural support portion fixing screw 74. In addition, the screw fastening area 77c can be set in any number as long as the second split structural support portion 77a2 can be fixed to the outer frame 30 by the structural support portion fixing screw 74. The screw fastening area 77c can be set, for example, at one position in the center of the second split structural support portion 77a2 in the length direction, or at two positions on both end sides of the second split structural support portion 77a2 in the length direction.

[0172] The height of the screw fastening region 77c may be any height as long as the second split structure support portion 77a2 can be fixed to the outer frame 30 by the structure support portion fixing screws 74. Fig.35 In the example shown, the height of the screw fastening area 77c is set to 1 / 3 of the height of the area other than the screw fastening area 77c at the second split structure support portion 77a2. In addition, the height of the screw fastening area 77c may also be set to the same height as the height of the area other than the screw fastening area 77c at the second split structure support portion 77a2.

[0173] In addition, the structure of the structural support portion 77 with elastic function is not limited to the above-mentioned example. For example, in the case of the power semiconductor device 100, even if there is a structure in which a sponge with elastic function is sandwiched between at least one of the inner surface 31a of the bottom surface portion 31 of the outer frame 30 and the structural support portion 50 and between the central area 414 of the housing 40 and the structural support portion 50, the same effect as described above can be obtained.

[0174] Next, the positional relationship among the structural support portion 50 , the heat sink base 1 b of the heat sink integrated power module 20 , and the case 40 will be described. Fig.36 This is a first cross-sectional view for explaining the positional relationship among the structural support portion 50 of the power semiconductor device 100 according to the first embodiment, the heat sink base 1 b of the heat sink-integrated power module, and the case 40 .

[0175] If we focus on the screw fastening portion of the power semiconductor device 100, Fig.36 As shown, it is preferable that the width dimension of the structural support portion 50, i.e., the structural support portion width dimension 50L, is larger than the dimension of the gap 81 between the heat sink bases 1b of the heat sink integrated power modules 20 adjacent in the left-right direction. The structural support portion width dimension 50L is set to a dimension that enables screw tightening of the power module fixing screws 72 in the central area 414 of the housing 40.

[0176] Furthermore, the heat sink base 1b of the heat sink integrated power module 20 adjacent in the left-right direction is mounted on the housing 40. In this state, the heat sink base 1b and the housing 40 are fixed by the power module fixing screws 72 in the end region 415 of the housing 40. In addition, the power module fixing screws 72 are screwed from above the central region 414 of the housing 40, so that the heat sink base 1b, the housing 40, and the structural support portion 50 are fixed by the power module fixing screws 72.

[0177] Thus, the heat sink integrated power module 29 is firmly fixed to the holding portion 60, and the structure of the power semiconductor device 100 with higher vibration resistance is obtained. That is, by setting the above structure, the cross-sectional area of ​​the air passage along the XZ plane inside the holding portion 60 becomes smaller, the flow rate of the airflow flowing between adjacent heat sink fins 1a becomes larger, the thermal conductivity of the air from between the heat sink fins 1a to the surroundings of the heat sink fins 1a becomes larger, and the heat dissipation performance of the heat sink 1 becomes the best.

[0178] Fig.37 This is a second cross-sectional view for explaining the relationship between the structural support portion 50 of the power semiconductor device 100 according to the first embodiment, the heat sink base 1 b of the heat sink-integrated power module, and the case 40 . Fig.38 This is a third cross-sectional view for explaining the relationship between the structural support portion 50 of the power semiconductor device 100 according to the first embodiment, the heat sink base 1 b of the heat sink-integrated power module, and the case 40 .

[0179] exist Fig.37 In the illustrated structure, the structural support portion width dimension 50L is larger than the dimension of the gap 81 between the heat sink bases 1b of the heat sink integrated power modules 20 adjacent in the left-right direction. Fig.38In the structure shown, the structural support portion width dimension 50L is smaller than the dimension of the gap 81 between the heat sink bases 1b of the heat sink integrated power modules 20 adjacent in the left-right direction. The dimension of the gap 81 is set to a dimension that enables the case fixing screws 71 to be screwed in the central area 414 of the case 40.

[0180] exist Fig.37 The structure shown and Fig.38 In the structure shown, the housing 40 and the structural support portion 50 are fixed by the housing fixing screws 71 from above the central area 414 of the housing 40. Fig.37 The structure shown and Fig.38 In the structure shown, the fixing strength of the holding portion 60 is ensured and the structure of the power semiconductor device 100 with high vibration resistance is obtained. Fig.36 Structure shown > Fig.37 Structure shown > Fig.38 The order of the construction shown becomes good.

[0181] In addition, Fig.36 In the structure shown, Fig.37 The structure shown and Fig.38 Compared with the structure shown in the figure, the number of screws used can be reduced, the productivity of the power semiconductor device 100 is improved, and the manufacturing cost of the power semiconductor device 100 can be reduced.

[0182] Next, the shape and arrangement of the structure support portion 50 will be described. Fig.39 This is a first plan view for explaining the shape and arrangement of the structural support portion 50 of the power semiconductor device 100 according to the first embodiment. Fig.39 In FIG. 1 , a part of the structure of the power semiconductor device 100 is omitted. Fig.39 In the structure shown, with respect to the structural support portion 50, in the in-plane direction of the bottom portion 31 of the outer frame 30 and the in-plane direction of the housing 40, the length direction of the structural support portion 50 is set to be parallel to the depth direction of the power semiconductor device 100, that is, the direction of travel of the airflow 200 inside the retaining portion 60. In addition, the structural support portion 50 extends continuously from the end 33 on the front side of the outer frame 30 to the end 34 on the back side of the outer frame 30. That is, the structural support portion 50 extends continuously in the direction from the inlet toward the outlet in the region from the wind inlet to the wind outlet in the retaining portion 60. In addition, the shape and configuration of the structural support portion 50 are not limited to. Fig.39 The structure shown.

[0183] Fig.40This is a second plan view for explaining the shape and arrangement of the structural support portion 50 of the power semiconductor device 100 according to the first embodiment. Fig.40 In FIG. 1 , a part of the structure of the power semiconductor device 100 is omitted. Fig.40 In the structure shown, the structural support portion 50 is partially arranged in a region of a portion on the upwind side of the direction of travel of the airflow 200 flowing inside the holding portion 60, including adjacent corners of each heat sink base 1b of two heat sink integrated power modules 20 adjacent in the left-right direction, in the in-plane direction of the bottom portion 31 of the outer frame 30 and the in-plane direction of the housing 40. In addition, the structural support portion 50 is partially arranged in a region of a portion on the downwind side of the direction of travel of the airflow 200 flowing inside the holding portion 60, including adjacent corners of each heat sink base 1b of two heat sink integrated power modules 20 adjacent in the left-right direction, in the in-plane direction of the bottom portion 31 of the outer frame 30 and the in-plane direction of the housing 40. That is, the structural support portion 50 is discontinuously arranged in the direction from the inlet to the outlet in the region from the air inlet to the air outlet in the holding portion 60.

[0184] Fig.41 This is a third plan view for explaining the shape and arrangement of the structural support portion 50 of the power semiconductor device 100 according to the first embodiment. Fig.41 In FIG. 1 , a part of the structure of the power semiconductor device 100 is omitted. Fig.41 In the structure shown, the structural support portion 50 is partially arranged in a region on the upwind side of a portion of the flow direction of the airflow 200 flowing inside the holding portion 60, including adjacent corners of each heat sink base 1b of two heat sink-integrated power modules 20 adjacent in the left-right direction on the upwind side, in the in-plane direction of the bottom portion 31 of the outer frame 30 and the in-plane direction of the housing 40. In addition, the structural support portion 50 is partially arranged in a region on the leeward side of a portion of the flow direction of the airflow 200 flowing inside the holding portion 60, including adjacent corners of each heat sink base 1b of two heat sink-integrated power modules 20 adjacent in the left-right direction on the leeward side, in the in-plane direction of the bottom portion 31 of the outer frame 30 and the in-plane direction of the housing 40. In addition, the structural support portion 50 is partially arranged in a region including adjacent corners of each heat sink base 1b of four adjacent heat sink-integrated power modules 20 in the in-plane direction of the bottom portion 31 of the outer frame 30 and the in-plane direction of the housing 40. That is, the structural support portion 50 is discontinuously arranged in the direction from the inlet toward the outlet in the region from the air inlet to the air outlet in the holding portion 60.

[0185] Fig.42This is a fourth plan view for explaining the shape and arrangement of the structural support portion 50 of the power semiconductor device 100 according to the first embodiment. Fig.42 In FIG. 1 , a part of the structure of the power semiconductor device 100 is omitted. Fig.42 In the structure shown, the structural support portion 50 is locally arranged in a portion of an area including a central area in the depth direction of each heat sink base 1b of two heat sink-integrated power modules 20 adjacent in the left-right direction in the in-plane direction of the bottom portion 31 of the outer frame 30 and the in-plane direction of the shell 40.

[0186] pass Figure 39 to Figure 42 The structure shown in the figure can obtain the power semiconductor device 100 with high vibration resistance as described above. In addition, in the power semiconductor device 100, by configuring the structural support part 50 on the upwind side of the airflow 200 in the retaining part 60, the airflow 200 delivered from the air supply system can be rectified and flowed between the adjacent heat sink fins 1a. As a result, the power semiconductor device 100 can obtain the heat dissipation performance as designed. In addition, the effect of the vibration resistance of the power semiconductor device 100 achieved by the above-mentioned structure is as high as Fig.39 Structure shown > Fig.40 Structure shown > Fig.41 Structure shown > Fig.42 The order of the construction shown becomes good.

[0187] As described above, in the power semiconductor device 100 according to the first embodiment, the structural support portion 50 is arranged on the bottom surface portion 31 of the outer frame 30 of the holding portion 60 in a manner to bear the load of the plurality of heat sink integrated power modules 20 and the housing 40 on which the plurality of heat sink integrated power modules 20 are mounted. Therefore, in the power semiconductor device 100, the deflection of the housing 40 generated when the plurality of heat sink integrated power modules 20 are fixed to the housing 40 can be suppressed. Thus, in the power semiconductor device 100, the decrease in the heat dissipation of the heat sink 1 caused by the gap generated between the heat sink 1 and the housing 49 when the housing 40 is deflected can be suppressed or prevented, and the heat dissipation and vibration resistance of the heat generated in the power module 11 can be improved.

[0188] In addition, the structural support portion 50 is arranged at the bottom portion 31 of the outer frame 30 in an area corresponding to the central area 414 of the housing 40. Thus, the structural support portion 50 can evenly bear the load of two heat sink integrated power modules 20 adjacent to each other in the left-right direction, and can further suppress the deflection of the housing 40 generated when the plurality of heat sink integrated power modules 20 are fixed to the housing 40.

[0189] In addition, with respect to the power semiconductor device 100, by arranging the structural support portion 50 on the upwind side of the interior of the retaining portion 60, an air path can be formed by the structural support portion 50 to rectify the airflow 200 flowing into the interior of the retaining portion 60, so that the rectified air flows into the heat sink 1, thereby improving the heat dissipation of the heat generated in the power module 11.

[0190] Furthermore, according to the structure of the power semiconductor device 100 , the plurality of heat sink integrated power modules 20 having high heat dissipation performance can be applied to a high-capacity power system using a plurality of power modules with high heat dissipation and high vibration resistance.

[0191] Therefore, according to the power semiconductor device 100 according to the first embodiment, it is possible to suppress the deflection of the case on which the plurality of power modules and the heat sink are mounted.

[0192] Implementation Method 2

[0193] Fig.43 1 is a cross-sectional view showing the structure of the power semiconductor device 101 involved in the second embodiment. The power semiconductor device 101 involved in the second embodiment is different from the power semiconductor device 100 involved in the first embodiment in that a structure support portion 51 is provided instead of the structure support portion 50. The structure support portion 51 has a through hole 51a that penetrates the structure support portion 51 in the depth direction. That is, the structure support portion 51 has a through hole 51a that penetrates the structure support portion 51 in the direction from the inlet of the retaining portion 60 toward the outlet. As far as the power semiconductor device 101 is concerned, since the structure support portion 51 has the through hole 51a, the surface area of ​​the structure support portion 51 becomes larger, and therefore, the heat dissipation performance of the structure support portion 51 against the heat generated at the semiconductor element 5 of the power module 11 is improved.

[0194] Fig.44 1 is a cross-sectional view showing the structure of the power semiconductor device 102 according to the second embodiment. The power semiconductor device 102 according to the second embodiment is different from the power semiconductor device 100 according to the first embodiment in that a structure support portion 52 is provided instead of the structure support portion 50. The structure support portion 52 has a structure of the structure support portion 51 and has a surface of the structure support portion 52 with concavo-convex portions 52a. In the power semiconductor device 102, the surface area of ​​the structure support portion 52 is increased by the structure support portion 52 having the concavo-convex portions 52a, and thus the heat dissipation performance of the structure support portion 52 against the heat generated at the semiconductor element 5 of the power module 11 is improved.

[0195] Implementation 3

[0196] Fig.45 It is a cross-sectional view showing the structure of a heat sink integrated power module 21 according to the third embodiment. Fig.46 It is a cross-sectional view showing the structure of a power semiconductor device 103 according to the third embodiment.

[0197] In the power semiconductor device 100, since the heat sink integrated power module 20 is provided with one heat sink 1 for one power module 11, the operability when assembling the power semiconductor device 100 and the disassembly of the components during maintenance are improved. On the other hand, in the power semiconductor device 100, since one heat sink 1 is singulated for one power module 11, the number of screws for fixing the heat sink integrated power module 20 to the housing 40 increases compared to the case where a plurality of power modules are mounted on one heat sink, and there is a possibility that productivity decreases.

[0198] Therefore, if Fig.45 As shown, in the heat sink integrated power module 21 according to the third embodiment, a convex portion 22 is provided at an end portion of the heat sink base 1 b in the in-plane direction of the heat sink base 1 b.

[0199] like Fig.45 As shown in the figure, in the first heat sink integrated power module 21a as the heat sink integrated power module 21, a first convex portion 22a as the convex portion 22 is provided at the end of the heat sink base 1b in the in-plane direction of the heat sink base 1b. The first convex portion 22a is provided at the end of the heat sink base 1b on the side of the other power semiconductor device 103 adjacent in the left-right direction. In addition, the first convex portion 22a is provided at the upper part of the end of the heat sink base 1b.

[0200] like Fig.45 As shown in the figure, in the second heat sink integrated power module 21b as the heat sink integrated power module 21, a second convex portion 22b as the convex portion 22 is provided at the end of the heat sink base 1b in the in-plane direction of the heat sink base 1b. The second convex portion 22b is provided at the end of the heat sink base 1b on the side of the other power semiconductor device 103 adjacent in the left-right direction. In addition, the second convex portion 22b is provided at the lower part of the end of the heat sink base 1b.

[0201] like Fig.46As shown in FIG. 1 , the first heat sink integrated power module 21a and the second heat sink integrated power module 21b are mounted on the housing 40 in such a manner that the first convex portion 22a of the first heat sink integrated power module 21a and the second convex portion 22b of the second heat sink integrated power module 21b overlap. Then, the first convex portion 22a, the second convex portion 22b, the central region 414 of the housing 40, and the structural support portion 50 are fixed by screwing the overlapped first convex portion 22a and the second convex portion 22b, the central region 414 of the housing 40, and the structural support portion 50 with the power module fixing screws 72. That is, the first convex portion 22a, the second convex portion 22b, the central region 414 of the housing 40, and the structural support portion 50 are screwed in an overlapping state.

[0202] By adopting such a structure, the power semiconductor device 103 can reduce the number of screws for fixing the heat sink integrated power module 20 and the case 40 , thereby improving productivity.

[0203] Furthermore, by fixing the first convex portion 22a, the second convex portion 22b, and the structural support portion 50 with one power module fixing screw 72, the region where the first heat sink integrated power module 21a, the second heat sink integrated power module 21b, and the structural support portion 50 are fixed can be narrowed in the left-right direction in the central region 414 of the housing 40. Therefore, the number of heat dissipation fins 1a provided on the heat sink base 1b can be increased. As a result, the heat dissipation performance of the heat sink 1 for the heat generated by the semiconductor element 5 of the power module 11 is improved in the power semiconductor device 103.

[0204] The configurations described in the above embodiments are merely examples, and may be combined with other known technologies, the embodiments may be combined with each other, and a part of the configuration may be omitted or modified without departing from the gist of the invention.

[0205] Description of the label

[0206] 1 radiator, 1a radiator fin, 1b radiator base, 1bu radiator base concavo-convex part, 1bp outer peripheral part, 1bs1 radiator base first short side, 1bs2 radiator base second short side, 1bl1 radiator base first long side, 1bl2 radiator base second long side, 2 fin base, 2u fin base concavo-convex part, 3 insulating sheet, 4 wiring wire, 5 semiconductor element, 6 solder, 7 metal conductor, 8 control terminal, 9 sealing resin, 10 main terminal, 11 power module, 12 heat sink of the first modified example, 13 heat sink of the second modified example, 15 bonding material, 16 adhesive, 20, 21 heat sink integrated power module, 22a first convex portion, 22b second convex portion, 30 outer frame, 31 bottom portion, 31a inner surface, 32 side portion, 33 end portion of the front side, 34 end portion of the back side, 40 housing, 41 opening portion, 50, 51, 52 structural support , 50a, 77c screw fastening area, 50L structural support portion width dimension, 51a through hole, 52a concave and convex, 60 holding portion, 71 housing fixing screw, 72 power module fixing screw, 73, 75 welding portion, 74, 76 structural support portion fixing screw, 77 structural support portion with elastic function, 77a1 first split structural support portion, 77a2 second split structural support portion, 77b coil spring, 80, 81 gap, 1 00, 101, 102, 103 power semiconductor device, 200 airflow, 211 first airflow vector, 212 second airflow vector, 411 short side of the opening, 411a first short side of the opening, 411b second short side of the opening, 412 long side of the opening, 412a first long side of the opening, 412b second long side of the opening, 413 adjacent area, 414 central area, 415 end area, 416 long side of the shell.

Claims

1. A power semiconductor device, characterized in that: have: A heat sink integrated power module, in which the power module and the heat sink are integrated, and a plurality of heat sink fins are arranged on a heat sink base to dissipate the heat generated by the power module; A holding portion having a box shape, wherein an air inlet and an air outlet of the holding portion are arranged opposite to each other, and a plurality of openings are formed on a surface connecting the inlet and the outlet; as well as A structural support portion is provided inside the holding portion, receives a load from the one surface toward the inside of the holding portion, and supports the one surface. In the case of the plurality of heat sink integrated power modules, a plurality of heat dissipation fins are inserted from the opening into the interior of the retaining portion, and in the in-plane direction of the heat sink base, the outer peripheral edge of the heat sink base is supported on an adjacent area adjacent to the opening on the one surface, The structural support portion is arranged at a position corresponding to the heat sink bases of the adjacent heat sink integrated power modules in a width direction of the holding portion, and the width direction of the holding portion is a direction orthogonal to a direction from the inlet toward the outlet.

2. The power semiconductor device according to claim 1, characterized in that: The holding portion has: an outer frame having a U-shape consisting of a bottom portion and two side portions standing upright from a pair of opposite ends of the bottom portion; and A plate-shaped housing, which is supported by the free ends of the U-shape, i.e., the ends of the two side portions, to form the one surface, The adjacent region of the housing and the outer peripheral edge portion of the heat sink base are fastened by screws.

3. The power semiconductor device according to claim 2, characterized in that: The structural support portion is fixed to the outer frame and connected to the housing.

4. The power semiconductor device according to claim 2, characterized in that: The structural support portion is fixed to the housing and is in contact with the outer frame.

5. The power semiconductor device according to claim 4, characterized in that: The width of the structure support portion in a direction orthogonal to a direction from the inlet toward the outlet is larger than a gap between the heat sink bases of the heat sink integrated power modules adjacent to each other in a width direction of the holding portion.

6. The power semiconductor device according to claim 4, characterized in that: A first heat sink integrated power module and a second heat sink integrated power module are provided, which are the heat sink integrated power modules adjacent to each other in the width direction of the holding portion, The first heat sink integrated power module has a first convex portion at an end portion of the heat sink base on the second heat sink integrated power module side. The second heat sink integrated power module has a second convex portion at an end portion of the heat sink base on the first heat sink integrated power module side. The first convex portion, the second convex portion, the housing, and the structure support portion are fastened by screws in an overlapping state.

7. The power semiconductor device according to any one of claims 1 to 6, characterized in that: The structural support portion extends continuously in a direction from the inlet toward the outflow outlet in a region from the inlet to the outflow outlet.

8. The power semiconductor device according to any one of claims 1 to 6, characterized in that: The structural support portion is disposed discontinuously in a direction from the inlet toward the outflow outlet in a region from the inlet to the outflow outlet.

9. The power semiconductor device according to any one of claims 1 to 8, characterized in that: The structural support portion has elasticity.

10. The power semiconductor device according to any one of claims 1 to 8, characterized in that: The structure support portion has a through hole that penetrates the structure support portion in a direction from the inlet toward the outlet.

11. The power semiconductor device according to any one of claims 1 to 10, characterized in that: The structure support portion has concavities and convexities on a surface.

12. A method for manufacturing a power semiconductor device, characterized in that: The process includes the following steps: fixing the structural support portion to an outer frame having a U-shape consisting of a bottom portion and two side portions standing upright from a pair of opposite ends of the bottom portion; A plate-shaped housing having a plurality of openings is placed at the free ends of the U-shape, i.e., the ends of the two side surfaces; A plurality of heat sink fins of a heat sink integrated power module in which a power module and a heat sink having a plurality of heat sink fins disposed on a heat sink base to dissipate heat generated by the power module are integrated, are inserted into the interior of the outer frame through the plurality of openings, and an outer peripheral edge portion of the heat sink base in a plane direction of the heat sink base is placed on an adjacent region of the housing adjacent to the opening; Fasten the housing and the outer frame with screws; as well as The outer peripheral edge of the heat sink base is screwed to the adjacent area of ​​the housing, The structural support portion is disposed at a position corresponding to the heat sink bases of the adjacent heat sink-integrated power modules in the width direction of the U shape.

13. A method for manufacturing a power semiconductor device, characterized in that: The process includes the following steps: fixing the structural support portion to a plate-shaped housing having a plurality of openings; The housing is placed on the free ends of the U-shaped outer frame having a U-shaped outer frame composed of a bottom portion and two side portions standing up from a pair of opposite ends of the bottom portion, that is, the ends of the two side portions; A plurality of heat sink fins of a heat sink integrated power module in which a power module and a heat sink having a plurality of heat sink fins disposed on a heat sink base to dissipate heat generated by the power module are integrated, are inserted into the interior of the outer frame through the plurality of openings, and an outer peripheral edge portion of the heat sink base in a plane direction of the heat sink base is placed on an adjacent region of the housing adjacent to the opening; Fasten the housing and the outer frame with screws; as well as The outer peripheral edge of the heat sink base is screwed to the adjacent area of ​​the housing, The structural support portion is disposed at a position corresponding to the heat sink bases of the adjacent heat sink-integrated power modules in the width direction of the U shape.

Images