Wandering star wheel assembly, cushion pad, polishing equipment and method, and semiconductor product

Abstract

The invention provides a wandering star wheel assembly, a buffer pad, polishing equipment, a polishing method and a semiconductor product. The wandering star wheel assembly comprises a first wandering star wheel and a second wandering star wheel, a through hole used for containing a workpiece to be polished is formed in the second wandering star wheel; and the buffer cushion is clamped between the first wandering star wheel and the second wandering star wheel.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor manufacturing technology, and in particular to a planetary wheel assembly, a buffer pad, a polishing device and method, and a semiconductor product. Background Art

[0002] Semiconductor products are usually manufactured through a series of processes such as grinding, polishing and cleaning. The polishing process includes single-side polishing and double-side polishing. Generally speaking, the single-side polishing process is carried out in a specific single-side polishing equipment.

[0003] At present, the single-sided polishing equipment in the related art can only polish a single semiconductor product at a time, and the polishing efficiency is low. Even when a single-sided polishing equipment with multiple polishing heads is used to polish multiple semiconductor products at the same time, the polishing effect is often poor, such as the surface roughness and other index parameters of the polished semiconductor products not meeting the requirements. This is mainly because when polishing multiple semiconductor products at the same time, the polishing byproducts may interfere with the polishing effect of other semiconductor products.

[0004] In addition, the single-sided polishing equipment in the related art is to install the semiconductor product into the polishing head for polishing. Specifically, the non-polished surface of the semiconductor product is fixed in the polishing head by an adhesive (such as wax), so as to polish the surface to be polished in the semiconductor product. However, after the single-sided polishing is completed, the semiconductor product needs to be unloaded by dissolving the adhesive. The whole process is cumbersome and may cause damage to the semiconductor product during the unloading process, or even cause the semiconductor product to break.

[0005] Therefore, the present disclosure hopes to provide a polishing device that can perform a single-sided polishing process on a semiconductor product, which can not only improve the polishing effect but also avoid damage to the semiconductor product. Summary of the invention

[0006] The present disclosure provides a planetary wheel assembly, a buffer pad, a polishing device and method, and a semiconductor product; the semiconductor product can be polished on a single side, and damage to the semiconductor product can be avoided, thereby reducing the risk of fragmentation.

[0007] The technical solution of the present disclosure is achieved as follows: In a first aspect, the present disclosure provides a planetary wheel assembly, the planetary wheel assembly comprising: The first planetary wheel; A second planetary wheel, wherein the second planetary wheel is provided with a through hole for accommodating a workpiece to be polished; A buffer pad is sandwiched between the first planetary wheel and the second planetary wheel.

[0008] Optionally, in some possible implementations, the buffer pad is configured to be circular, and is used to cover an area of ​​the surface of the first planetary wheel that corresponds to the tooth root circle of the first planetary wheel.

[0009] Optionally, in some possible implementations, the buffer pad is configured with its edge being serrated, so as to cover the entire surface of the first planetary wheel.

[0010] Optionally, in some possible implementations, a diameter of a portion of the buffer pad corresponding to the root circle of the first planetary gear is greater than or equal to 200 mm and less than or equal to 1000 mm.

[0011] Optionally, in some possible implementations, the buffer pad is made of damping cloth.

[0012] In a second aspect, the present disclosure provides a buffer pad, which is sandwiched between the first planetary wheel and the second planetary wheel in the planetary wheel assembly according to the first aspect.

[0013] Optionally, in some possible implementations, the buffer pad is configured to be circular, and is used to cover an area of ​​the surface of the first planetary wheel that corresponds to the tooth root circle of the first planetary wheel.

[0014] Optionally, in some possible implementations, the buffer pad is configured with its edge being serrated, so as to cover the entire surface of the first planetary wheel.

[0015] Optionally, in some possible implementations, a diameter of a portion of the buffer pad corresponding to the root circle of the first planetary gear is greater than or equal to 200 mm and less than or equal to 1000 mm.

[0016] Optionally, in some possible implementations, the buffer pad is made of damping cloth.

[0017] In a third aspect, the present disclosure provides a polishing device, the polishing device comprising: Upper fixed plate; Set the plate; According to the planetary wheel assembly of the first aspect, the first planetary wheel in the planetary wheel assembly is arranged between the upper fixed plate and the lower fixed plate; the second planetary wheel in the planetary wheel assembly is arranged between the lower fixed plate and the first planetary wheel; When the workpiece to be polished is placed in the through hole opened on the second planetary wheel, the first surface to be polished of the workpiece to be polished faces the lower fixed plate so that the first surface is polished by the first polishing pad arranged on the lower fixed plate.

[0018] Optionally, in some possible implementations, the first polishing pad includes first guide grooves, and the first guide grooves are distributed in a vertical and horizontal manner.

[0019] Optionally, in some possible implementations, a cross-section of the first guide groove is V-shaped.

[0020] Optionally, in some possible implementations, a chamfer is provided at a junction between an inner wall of the first guide groove and an upper surface of the first polishing pad.

[0021] Optionally, in some possible implementations, the second polishing pad disposed on the upper plate includes second guide grooves, and the total area of ​​the second guide grooves in the second polishing pad is smaller than the total area of ​​the first guide grooves in the first polishing pad.

[0022] Optionally, in some possible implementations, the polishing equipment further includes a polishing liquid supply device, and the polishing liquid supply device is used to supply polishing liquid to the first polishing pad arranged on the lower plate.

[0023] Optionally, in some possible implementations, the polishing liquid is supplied to the first polishing pad of the lower platen through a plurality of liquid outlet holes of the upper platen.

[0024] In a fourth aspect, the present disclosure provides a polishing method, the polishing method comprising: Providing a workpiece to be polished; Installing the workpiece to be polished into the through hole opened on the second planetary wheel of the polishing device according to the third aspect; When the workpiece to be polished is placed in the through hole opened on the second planetary wheel, the first surface to be polished of the workpiece to be polished faces the lower fixed plate of the polishing device so that the first surface is polished by the first polishing pad arranged on the lower fixed plate.

[0025] In a fifth aspect, the present disclosure provides a semiconductor product, wherein after the first surface to be polished of the semiconductor product is polished by the polishing equipment described in the third aspect, the surface roughness thereof is less than or equal to 0.02 μm, and the surface roughness of the unpolished second surface is greater than or equal to 0.04 μm and less than or equal to 0.06 μm.

[0026] The present invention provides a planetary wheel assembly, a buffer pad, a polishing device and method, and a semiconductor product; a single-sided polishing process of a workpiece to be polished is realized by a first planetary wheel and a second planetary wheel with a through hole. A buffer pad is arranged between the first planetary wheel and the second planetary wheel to prevent the non-polished surface of the workpiece to be polished from contacting the first planetary wheel, thereby preventing the non-polished surface of the workpiece to be polished from being scratched during the polishing process, and the buffer pad can also be used to evenly balance the polishing pressure of the workpiece to be polished, thereby reducing the risk of the workpiece to be polished being broken. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 A schematic structural diagram of a planetary wheel assembly provided in the present invention.

[0028] Figure 2 A schematic diagram of the exploded structure of a planetary wheel assembly provided in the present invention.

[0029] Figure 3 A schematic diagram of the exploded structure of another planetary wheel assembly provided in the present invention.

[0030] Figure 4 A schematic structural diagram of a buffer pad provided by the present invention.

[0031] Figure 5 A schematic structural diagram of a polishing device provided by the present invention.

[0032] Figure 6 This is a schematic structural diagram of the first polishing pad provided by the present invention.

[0033] Figure 7 A schematic diagram of the shape of the first guide groove provided in the present invention.

[0034] Figure 8 A schematic diagram of another shape of the first guide groove provided in the present invention.

[0035] Fig. 9 This is a schematic structural diagram of the second polishing pad provided by the present invention.

[0036] Fig.10 A schematic structural diagram of another polishing device provided by the present invention.

[0037] Fig.11 A schematic diagram of the delivery method of the polishing liquid provided in the present invention.

[0038] Fig.12 This is a schematic structural diagram of the upper fixed plate provided by the present invention.

[0039] Fig.13 A schematic structural diagram of another polishing device provided in the present invention.

[0040] Fig.14 A schematic flow chart of a polishing method provided in the present invention. DETAILED DESCRIPTION

[0041] The technical solutions in the present disclosure will be described clearly and completely below in conjunction with the accompanying drawings in the present disclosure.

[0042] Unless otherwise defined, the technical terms used in the present disclosure should be understood as the common meanings known to those of ordinary skill in the art to which the present disclosure belongs. The terms "first", "second", etc. in the present disclosure do not indicate any order, but are only used to distinguish, and the terms "upper", "lower", etc. are only used to indicate relative positional relationships.

[0043] It should be noted that, for the sake of clarity, not all features of a specific implementation are described and illustrated in the specification and drawings. Furthermore, in order to avoid unnecessary details that obscure the technical solution focused on by the present disclosure, only the device structures and parts closely related to the technical solution of the present disclosure are described and illustrated in the specification and drawings, while other details that are not closely related to the technical content of the present disclosure and are known to those skilled in the art are omitted.

[0044] As mentioned above, when a single-sided polishing device is used to polish a semiconductor product on one side, there are problems such as low polishing efficiency, poor polishing effect, complicated operation and possible damage to the semiconductor product. The double-sided polishing process of the double-sided polishing device is one of the most effective technical means for ultra-smooth surface processing of semiconductor products. The smooth consistency during the polishing process enables the polished semiconductor product to obtain a very high surface quality. In addition, the double-sided polishing device can not only polish multiple semiconductor products at the same time, but also has a simple operation method for loading and unloading semiconductor products. Therefore, in order to solve the above problems, the inventor of the present disclosure expects to use a double-sided polishing device to achieve polishing only the surface to be polished of the semiconductor product.

[0045] Based on this, the present disclosure provides a planetary wheel assembly 1 that can be applied to double-sided polishing equipment and perform single-sided polishing on semiconductor products. Figures 1 to 3 The planetary wheel assembly 1 includes a first planetary wheel 10, a second planetary wheel 20 and a buffer pad 30. In the specific implementation process, the second planetary wheel 20 is provided with a through hole 201 for accommodating the workpiece 2 to be polished. The buffer pad 30 is sandwiched between the first planetary wheel 10 and the second planetary wheel 20.

[0046] In some examples, the workpiece 2 to be polished is not limited to a wafer among semiconductor products, but may also be other semiconductor products, such as a heat sink, a porous electrode for a plasma etcher, and a focusing ring.

[0047] In the present disclosure, no specific requirements are made for the arrangement of the first planetary wheel 10 and the second planetary wheel 20. Figure 2 As shown, the first planetary wheel 10 may be disposed above the second planetary wheel 20, in which case the buffer pad 30 is disposed between the lower surface of the first planetary wheel 10 and the upper surface of the second planetary wheel 20. Figure 3 As shown, the first planetary wheel 10 may also be disposed below the second planetary wheel 20 , in which case the buffer pad 30 is disposed between the upper surface of the first planetary wheel 10 and the lower surface of the second planetary wheel 20 .

[0048] In order to achieve single-sided polishing of the workpiece 2 to be polished, in the specific implementation process, only the through hole 201 is opened in the second planetary wheel 20, and the first planetary wheel 10 does not have a groove or through hole for carrying the workpiece 2 to be polished. Figure 2 and Figure 3 In the figure, it is schematically shown that three through holes 201 are opened on the second planetary wheel 20. However, the number of through holes 201 opened on the second planetary wheel 20 can be adjusted according to actual production requirements.

[0049] In one embodiment of the present disclosure, three through holes 201 are opened on the second planetary wheel 20, which can not only polish multiple workpieces 2 to be polished at the same time to improve the polishing efficiency, but also ensure that the polishing effect of each workpiece 2 to be polished is consistent, thereby improving production output.

[0050] It should be noted that the through holes 201 involved in the present disclosure are all through holes 201 opened on the second planetary gear 20 .

[0051] In addition, in some examples, the workpiece 2 to be polished includes a first surface to be polished and a non-polished second surface opposite to the first surface. The provision of the buffer pad 30 can effectively protect the non-polished second surface of the workpiece 2 to be polished, and prevent the second surface from being damaged by unnecessary mechanical pressure and scratches of the first planetary wheel 10 during the polishing process, which can not only improve the yield rate of the workpiece 2 to be polished, but also reduce the risk of breakage caused by mechanical damage during the polishing process. In addition, during the polishing process, the rotation of the first planetary wheel 10 and the second planetary wheel 20 will generate certain vibrations and impacts, and the buffer pad 30 can absorb these vibrations and impacts, thereby reducing the potential damage to the workpiece 2 to be polished and ensuring the stability and consistency of the polishing process.

[0052] In the present disclosure, a single-side polishing process of the workpiece 2 to be polished is realized by the first planetary wheel 10 and the second planetary wheel with a through hole 201. A buffer pad 30 is arranged between the first planetary wheel 10 and the second planetary wheel 20, so that the buffer pad 30 can evenly balance the polishing pressure on the workpiece 2 to be polished, thereby reducing the risk of the workpiece 2 to be polished being broken.

[0053] for Figure 1 In some possible implementations of the technical solution shown, Figure 2 and Figure 3 As shown, the buffer pad 30 is provided in a circular shape, and is used to cover an area of ​​the surface of the first planetary gear 10 corresponding to the tooth root circle of the first planetary gear 10 .

[0054] This is because if the surface area of ​​the first planetary wheel 10 covered by the buffer pad 30 is small, or even can only cover the second surface of the workpiece 2 to be polished, then first of all, in this case, the buffer pad 30 can only be applied to the workpiece 2 to be polished of a specific size. This not only limits the use of the planetary wheel assembly 1, but also requires the re-paste of the buffer pad 30 of the corresponding size when polishing the workpiece 2 to be polished of other sizes, resulting in a long time for the entire polishing process. Secondly, if the size of the buffer pad 30 can only cover the second surface of the workpiece 2 to be polished, it is necessary to ensure that the second surface of the workpiece 2 to be polished is completely aligned with the buffer pad 30 during the loading of the workpiece 2 to be polished. This is because if the buffer pad 30 is offset relative to the second surface of the workpiece 2 to be polished, the buffer pad 30 and the second surface will continue to rotate by the offset during the polishing process, resulting in different polishing pressures on the area on the second surface that contacts the buffer pad 30 and other areas. Due to the uneven polishing pressure, the workpiece 2 to be polished may be broken during the polishing process.

[0055] Based on the above reasons, in the present disclosure, the buffer pad 30 is set to be circular, and is used to cover the area on the surface of the first planetary wheel 10 that corresponds to the root circle of the first planetary wheel 10. In this way, when polishing workpieces 2 to be polished of different sizes, there is no need to re-paste the buffer pad 30, thereby improving the versatility and flexibility of the planetary wheel assembly 1. Secondly, since the coverage area corresponding to the buffer pad 30 is large, it can be ensured that the buffer pad 30 completely covers the second surface of the workpiece 2 to be polished during the process of loading the workpiece 2 to be polished, and will not be offset from the second surface of the workpiece 2 to be polished. In this way, the pressure between each area on the second surface of the workpiece 2 to be polished is equal, avoiding uneven pressure during the polishing process, thereby effectively preventing the workpiece 2 to be polished from being broken. Furthermore, in order to effectively protect the second surface from scratches and other damages, and to make it easier to stick to the surface of the first planetary wheel 10 during the specific implementation process, in some possible implementations, such as Figure 4 As shown, the buffer pad 30 is configured with its edge being toothed, so as to cover the entire surface of the first planetary wheel 10 .

[0056] For the above-mentioned embodiments, in some examples, the diameter of the portion of the buffer pad 30 corresponding to the root circle of the first planetary gear 10 is greater than or equal to 200 mm and less than or equal to 1000 mm.

[0057] As mentioned above, when the size of the buffer pad 30 is small, it is easy to cause the workpiece 2 to be broken due to uneven polishing pressure during the polishing process. In order to avoid this situation, the present disclosure further limits the size of the buffer pad 30 to be greater than or equal to 200 mm. This size range can ensure that the buffer pad 30 can evenly cover the second surface of the workpiece 2 to be polished during the polishing process, thereby providing stable support and protection, and avoiding the workpiece 2 to be polished from being broken due to excessive local polishing pressure.

[0058] On the other hand, if the size of the buffer pad 30 is too large, the buffer pad 30 may not always cover the second surface of the workpiece 2 to be polished in a flat manner during the polishing process. In this case, not only will the flatness of the buffer pad 30 be affected, but the polishing pressure distribution may also be uneven, thereby causing the workpiece 2 to be polished to be broken. Therefore, the present disclosure defines the minimum size of the buffer pad 30 while also defining its maximum size to ensure that the buffer pad 30 remains flat during the polishing process, thereby ensuring the uniformity and consistency of the polishing process.

[0059] for Figure 1 In the technical solution shown, in some possible implementations, the buffer pad 30 is made of damping cloth.

[0060] This is mainly because the damping cloth has a fine texture, a soft surface, is porous and elastic. Therefore, when the buffer pad 30 is a damping cloth, it can effectively protect the second surface of the workpiece 2 to be polished, preventing the second surface from being damaged by unnecessary mechanical pressure and scratches from the first planetary wheel 10 during the polishing process, thereby improving the yield rate of the workpiece 2 to be polished.

[0061] In addition to the above factors, the hardness of the buffer pad 30 is also limited in the present disclosure to be much lower than the hardness of the workpiece 2 to be polished. Optionally, the hardness of the buffer pad 30 is greater than or equal to 55HA and less than or equal to 75HA. This is because when the hardness of the buffer pad 30 is low, it can not only protect the second surface of the workpiece 2 to be polished from being damaged by the first planetary wheel 10, but also ensure that it will not produce a polishing effect on the second surface of the workpiece 2 to be polished.

[0062] In some examples, the damping fabric is canvas, woolen cloth or nylon. Canvas is a lint-free pure cotton material with good wear resistance; woolen cloth is a short-fiber lint with good wear resistance and resilience; nylon is a lint-free other fiber material with good resilience.

[0063] In addition, the present disclosure further provides a buffer pad 30 , which is sandwiched between the first planetary wheel 10 and the second planetary wheel in the planetary wheel assembly 1 according to the aforementioned technical solution.

[0064] In some possible implementations, the buffer pad 30 is configured in a circular shape to cover an area of ​​the surface of the first planetary gear 10 corresponding to the tooth root circle of the first planetary gear 10 .

[0065] In some possible implementations, the buffer pad 30 is configured with its edge being toothed, so as to cover the entire surface of the first planetary wheel 10 .

[0066] In some possible implementations, the diameter of a portion of the buffer pad 30 corresponding to the tooth root circle of the first planetary gear 10 is greater than or equal to 200 mm and less than or equal to 1000 mm.

[0067] In some possible implementations, the buffer pad 30 is made of damping cloth.

[0068] It should be noted that, for the specific implementation method or implementation example corresponding to the buffer pad 30, reference may be made to the corresponding implementation method and example of the aforementioned technical solution, and the present disclosure will not elaborate on them here.

[0069] See also Figure 5 The present disclosure also provides a polishing device 100, which includes an upper fixed plate 40, a lower fixed plate 50 arranged below the upper fixed plate 40, and a planetary wheel assembly 1 according to the above technical solution. The first planetary wheel 10 in the planetary wheel assembly 1 is arranged between the upper fixed plate 40 and the lower fixed plate 50. The second planetary wheel 20 in the planetary wheel assembly 1 is arranged between the lower fixed plate 50 and the first planetary wheel 10. In a specific implementation process, when the workpiece 2 to be polished is placed in the through hole 201 opened on the second planetary wheel 20, the first surface to be polished in the workpiece 2 to be polished faces the lower fixed plate 50 so as to be polished by the first polishing pad 501 arranged on the lower fixed plate 50.

[0070] First, it should be noted that during the polishing process of the workpiece 2 to be polished, the upper fixed plate 40, the lower fixed plate 50, the first planetary wheel 10 and the second planetary wheel 20 are all in a rotating state. Specifically, the upper fixed plate 40 and the lower fixed plate 50 rotate by means of their respective driving mechanisms (not shown in the figure), while the first planetary wheel 10 and the second planetary wheel 20 perform planetary motion between the upper fixed plate 40 and the lower fixed plate 50. This complex multi-directional motion design not only enables the workpiece 2 to be polished to move with the revolution of the second planetary wheel 20, but also causes the workpiece 2 to be polished to rotate in the through hole 201. The self-rotation motion of the workpiece 2 to be polished is one of the key factors for obtaining uniform surface quality during the polishing process. This is mainly because the self-rotation motion of the workpiece 2 to be polished ensures that each area on the first surface to be polished can be uniformly contacted with the first polishing pad 501 on the lower fixed plate 50, thereby achieving a consistent and uniform material removal rate, thereby obtaining a high-quality surface after polishing.

[0071] Secondly, if Figure 5As shown, in the present disclosure, in order to polish only the first surface of the workpiece 2 to be polished, when the workpiece 2 to be polished is placed in the through hole 201 opened on the second planetary wheel 20, the first surface faces the lower fixed plate 50 that plays a polishing role, and the first surface is exposed from the through hole 201 relative to the lower surface of the second planetary wheel 20. This design ensures that the first surface to be polished in the workpiece 2 to be polished can directly contact the first polishing pad 501 on the lower fixed plate 50 to achieve an efficient polishing effect.

[0072] Again, if Figure 5 As shown, in the polishing device 100 provided by the present disclosure, the first surface of the workpiece 2 to be polished faces the lower platen 50, which ensures that the polishing liquid is mainly concentrated in the contact area between the first surface and the first polishing pad 501 on the lower platen 50 during the polishing process. Therefore, the polishing liquid will not accumulate in the through hole 201. Even if the polishing liquid is thrown into the gap between the inner surface of the through hole 201 and the workpiece 2 to be polished due to the centrifugal force during the polishing process, the gravity will also cause the polishing liquid to flow out of the through hole 201 smoothly, effectively preventing the polishing liquid from remaining in the through hole 201 and crystallizing. In this case, not only the edge of the workpiece 2 to be polished and the non-polished second surface are prevented from being damaged by unnecessary polishing and scratches, but also the uniformity and consistency of polishing are significantly improved, and the surface defects caused by the residual polishing liquid are reduced, thereby ensuring the high-quality polishing effect of the workpiece 2 to be polished.

[0073] In the present disclosure, the first planetary wheel 10 and the second planetary wheel 20 are arranged to rotate integrally relative to the upper fixed plate 40 and the lower fixed plate 50. In the polishing device 100, in order to achieve single-sided polishing of the workpiece 2 to be polished, during the polishing process, the first planetary wheel 10 and the second planetary wheel 20 need to mesh with the sun wheel and the ring gear (both not shown in the figure) in the polishing device 100. For this purpose, Figure 2 and Figure 3 As shown, the first planetary wheel 10 and the second planetary wheel 20 have the same size and number of teeth, so that the first planetary wheel 10 and the second planetary wheel 20 can mesh with the sun gear and the ring gear at the same time, and rotate synchronously relative to the upper fixed plate 40 and the lower fixed plate 50 under the drive of the sun gear and the ring gear. Based on this situation, there is no need to make an additional connection between the first planetary wheel 10 and the second planetary wheel 20 in the polishing device 100.

[0074] In some examples, the depth of the through hole 201 formed on the second planetary wheel 20 is less than the thickness of the workpiece 2 to be polished. Figure 5As shown, in order to enable the first surface of the workpiece 2 to be polished to be polished by the first polishing pad 501 arranged on the lower fixed plate 50, the first surface needs to be exposed from the through hole 201 relative to the lower surface of the lower fixed plate 50, thereby limiting the depth of the through hole 201 opened on the second planetary wheel 20 to be less than the thickness of the workpiece 2 to be polished in the specific implementation process.

[0075] for Figure 5 In some possible implementations of the technical solution shown, Figure 6 As shown, the first polishing pad 501 includes first guide grooves 5011, and the first guide grooves 5011 are distributed in a vertical and horizontal manner.

[0076] In this case, the plurality of first guide grooves 5011 crisscrossed in a vertical and horizontal manner can effectively improve the ability of the first polishing pad 501 to store and transport the polishing liquid, and ensure that the polishing liquid is evenly distributed in the polishing area of ​​the first polishing pad 501 during the polishing process, thereby improving the polishing efficiency and quality. Specifically, the design of the first guide grooves 5011 can significantly improve the fluidity of the polishing liquid, make the polishing liquid more evenly distributed in the polishing area of ​​the first polishing pad 501, reduce the local accumulation of the polishing liquid, and ensure the uniformity and consistency of the polishing process. In addition, the first guide grooves 5011 crisscrossed in a vertical and horizontal manner can also improve the friction coefficient and shear stress on the surface of the first polishing pad 501, reduce the mechanical damage to the first surface to be polished in the workpiece 2 to be polished during the polishing process, and improve the surface quality of the workpiece 2 to be polished after polishing. This design not only improves the polishing efficiency, but also significantly reduces surface defects such as scratches and uneven areas, thereby ensuring a high-quality polishing effect of the workpiece 2 to be polished.

[0077] For the above implementations, in some examples, such as Figure 7 As shown, the cross section of the first guide groove 5011 is V-shaped.

[0078] In this case, it is possible to avoid a right-angle structure at the junction between the inner wall of the first guide groove 5011 and the upper surface of the first polishing pad 501. When polishing the workpiece 2 to be polished, if a right-angle structure appears at the junction, the first surface to be polished of the workpiece 2 to be polished may be scratched. Therefore, in the present disclosure, the cross section of the first guide groove 5011 is limited to be V-shaped to avoid the above-mentioned right-angle structure, so as to effectively prevent the workpiece 2 to be polished from being scratched due to the sharp edge of the surface of the first polishing pad 501, and improve the surface quality of the workpiece 2 to be polished after polishing.

[0079] Alternatively, if Figure 8 As shown, a chamfer 50111 is provided at the junction between the inner wall of the first guide groove 5011 and the upper surface of the first polishing pad 501 .

[0080] exist Figure 8 The chamfer 50111 set at the position where the inner wall of the first guide groove 5011 meets the upper surface of the first polishing pad 501 effectively avoids the formation of the above-mentioned sharp edges, thereby significantly reducing the risk of scratching the first surface of the workpiece 2 to be polished during the polishing process, thereby ensuring high-quality polishing of the first surface of the workpiece 2 to be polished.

[0081] In addition, the setting of the chamfer 50111 enables the polishing liquid to be more smoothly transported from the first guide groove 5011 to the polishing area of ​​the first polishing pad 501, reducing the accumulation of the polishing liquid in the first guide groove 5011. This not only makes the distribution of the polishing liquid more uniform, but also improves the material removal rate, shortens the polishing time, and thus improves the production efficiency.

[0082] For the above implementations, in some examples, such as Fig. 9 As shown, the second polishing pad 401 disposed on the upper plate 40 includes second guide grooves 4011 , and the total area of ​​the second guide grooves 4011 in the second polishing pad 401 is smaller than the total area of ​​the first guide grooves 5011 in the first polishing pad 501 .

[0083] In the present disclosure, after the polishing of the workpiece 2 to be polished is completed, it is necessary to perform an unloading operation from the polishing device 100. In the process of unloading the workpiece 2 to be polished, the upper fixed plate 40 and the first planetary wheel 10 need to be unloaded first. In order to ensure the smooth progress of this process, the total area of ​​the first guide grooves 5011 in the first polishing pad 501 is defined in the present disclosure as being greater than the total area of ​​the second guide grooves 4011 in the second polishing pad 401. This design ensures that the contact area between the first planetary wheel 10 and the second polishing pad 401 is larger, thereby generating a greater adsorption force. Since the upper fixed plate 40 has a greater adsorption force on the first planetary wheel 10, the first planetary wheel 10 can be adsorbed at the same time when the upper fixed plate 40 is unloaded, thereby completing the unloading of the upper fixed plate 40 and the first planetary wheel 10. This not only improves the efficiency of the unloading process, but also reduces the unloading risk caused by insufficient adsorption force, thereby ensuring the stability and consistency of the entire unloading process.

[0084] for Figure 5 The technical solution shown in the figure may be implemented in some embodiments, such as Fig.10 As shown, the polishing device 100 further includes a polishing liquid supply device 60 , and the polishing liquid supply device 60 is used to supply polishing liquid to the first polishing pad 501 arranged on the lower platen 50 .

[0085] In the specific implementation process, in order to achieve efficient polishing of the first surface to be polished in the workpiece 2 to be polished, it is necessary to supply polishing liquid to the first polishing pad 501. The polishing liquid can not only play a lubricating role and reduce mechanical wear during the polishing process, but also can play a chemical role on the first surface of the workpiece 2 to be polished through its chemical components to promote the removal of materials. Specifically, the chemical components (such as oxidants, abrasives, etc.) in the polishing liquid react chemically with the first surface of the workpiece 2 to be polished to form a layer of chemical film that is easy to remove, thereby improving the material removal rate. Therefore, the reasonable design and use of the polishing liquid supply device 60 is crucial to achieving high-quality polishing effects.

[0086] For the above implementations, in some examples, such as Fig.11 and Fig.12 As shown, the polishing liquid is supplied to the first polishing pad 501 of the lower platen 50 through a plurality of liquid outlet holes 402 of the upper platen 40 .

[0087] In the specific implementation process, the polishing liquid supplied by the polishing liquid supply device 60 flows into the guide groove 70 through the liquid guide holes 701 corresponding to the guide groove 70. The multiple liquid outlet holes 402 on the upper plate 40 are respectively connected to the guide groove 70 through the guide pipe 80. In this way, during the polishing process, the polishing liquid in the guide groove 70 can be evenly distributed to the first polishing pad 501 of the lower plate 50 through the multiple liquid outlet holes 402.

[0088] It should be noted that Fig.12 The blank circle in the figure represents a water outlet 702, which is used to supply ultrapure water to the polishing device 100 for cleaning.

[0089] Of course, if Fig.13 As shown, in a specific implementation process, the polishing liquid supplied by the polishing liquid supply device 60 may not pass through the upper platen 40, but directly supply the polishing liquid to the first polishing pad 501 on the lower platen 50. This provides a more flexible polishing liquid supply method, which can be selected according to different polishing process requirements, thereby improving the adaptability and flexibility of the polishing device 100.

[0090] In addition, the present disclosure also provides a polishing method, such as Fig.14 As shown, the polishing method comprises the following steps: In step S1401, a workpiece 2 to be polished is provided; In step S1402, the workpiece 2 to be polished is installed into the through hole 201 opened on the second planetary wheel 20 of the polishing device 100 described in the above technical solution; When the workpiece 2 to be polished is placed in the through hole 201 opened on the second planetary wheel 20 , the first surface to be polished in the workpiece 2 to be polished faces the lower platen 50 of the polishing device 100 so as to be polished by the first polishing pad 501 arranged on the lower platen 50 .

[0091] Finally, the present disclosure also provides a semiconductor product, in which the surface roughness of the first surface to be polished is less than or equal to 0.02 μm after being polished by the polishing equipment 100 described in the aforementioned technical solution, and the surface roughness of the unpolished second surface is greater than or equal to 0.04 μm and less than or equal to 0.06 μm.

[0092] It should be noted that the technical solutions described in the present disclosure can be combined arbitrarily without conflict.

[0093] The above is only a specific embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person skilled in the art who is familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A planetary wheel assembly, characterized in that: The planetary wheel assembly comprises: First Star Wheel; A second planetary wheel, wherein the second planetary wheel is provided with a through hole for accommodating a workpiece to be polished; A buffer pad is sandwiched between the first planetary wheel and the second planetary wheel.

2. The planetary wheel assembly according to claim 1, characterized in that: The buffer pad is configured in a circular shape and is used to cover an area of ​​the surface of the first planetary wheel corresponding to a tooth root circle of the first planetary wheel.

3. The planetary wheel assembly according to claim 1, characterized in that: The buffer pad is configured with its edge being toothed, so as to cover the entire surface of the first planetary wheel.

4. The planetary wheel assembly according to any one of claims 1 to 3, characterized in that: A diameter of a portion of the buffer pad corresponding to the tooth root circle of the first planetary gear is greater than or equal to 200 mm and less than or equal to 1000 mm.

5. The planetary wheel assembly according to any one of claims 1 to 3, characterized in that: The material of the buffer pad is damping cloth.

6. A cushion, characterized in that: The buffer pad is sandwiched between the first planetary wheel and the second planetary wheel in the planetary wheel assembly according to any one of claims 1 to 5.

7. The cushion according to claim 6, characterized in that: The buffer pad is configured in a circular shape and is used to cover an area of ​​the surface of the first planetary wheel corresponding to a tooth root circle of the first planetary wheel.

8. The cushion according to claim 6, characterized in that: The buffer pad is configured with its edge being toothed, so as to cover the entire surface of the first planetary wheel.

9. The cushioning pad according to any one of claims 6 to 8, characterized in that: A diameter of a portion of the buffer pad corresponding to the tooth root circle of the first planetary gear is greater than or equal to 200 mm and less than or equal to 1000 mm.

10. The cushioning pad according to any one of claims 6 to 8, characterized in that: The material of the buffer pad is damping cloth.

11. A polishing device, characterized in that: The polishing equipment comprises: Upper fixed plate; Set the plate; The planetary wheel assembly according to any one of claims 1 to 5, wherein the first planetary wheel in the planetary wheel assembly is arranged between the upper fixed plate and the lower fixed plate; the second planetary wheel in the planetary wheel assembly is arranged between the lower fixed plate and the first planetary wheel; When the workpiece to be polished is placed in the through hole opened on the second planetary wheel, the first surface to be polished of the workpiece to be polished faces the lower fixed plate so that the first surface is polished by the first polishing pad arranged on the lower fixed plate.

12. The polishing device according to claim 11, characterized in that: The first polishing pad includes first guide grooves, and the first guide grooves are distributed in a vertical and horizontal cross pattern.

13. The polishing device according to claim 12, characterized in that: The cross section of the first guide groove is V-shaped.

14. The polishing device according to claim 12, characterized in that: A chamfer is provided at a junction between the inner wall of the first guide groove and the upper surface of the first polishing pad.

15. The polishing device according to claim 12, characterized in that: The second polishing pad disposed on the upper plate includes second guide grooves, and the total area of ​​the second guide grooves in the second polishing pad is smaller than the total area of ​​the first guide grooves in the first polishing pad.

16. The polishing apparatus according to any one of claims 11 to 15, characterized in that The polishing equipment further comprises a polishing liquid supply device, and the polishing liquid supply device is used to supply polishing liquid to the first polishing pad arranged on the lower plate.

17. The polishing device according to claim 16, characterized in that The polishing liquid is supplied to the first polishing pad of the lower platen through a plurality of liquid outlets of the upper platen.

18. A polishing method, characterized in that: The polishing method comprises: Providing a workpiece to be polished; Installing the workpiece to be polished into the through hole opened on the second planetary wheel of the polishing device according to any one of claims 11 to 17; When the workpiece to be polished is placed in the through hole opened on the second planetary wheel, the first surface to be polished of the workpiece to be polished faces the lower fixed plate of the polishing device so that the first surface is polished by the first polishing pad arranged on the lower fixed plate.

19. A semiconductor product, characterized in that: After being polished by the polishing device according to any one of claims 11 to 17, the surface roughness of the first surface to be polished in the semiconductor product is less than or equal to 0.02 μm, and the surface roughness of the unpolished second surface is greater than or equal to 0.04 μm and less than or equal to 0.06 μm.

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