Objective table, grinding / polishing device and temperature control method of objective table

Abstract

The embodiment of the invention provides an objective table, a grinding / polishing device and a temperature control method of the objective table, the objective table comprises an upper half objective table and a lower half objective table which are buckled with each other, and the top of the upper half objective table is used for bearing a wafer; the semiconductor chilling plate is arranged between the upper half objective table and the lower half objective table and is used for heating or cooling the wafer; a cable through hole is formed in the bottom of the lower half objective table; a cable of the semiconductor chilling plate penetrates through the cable penetrating hole and is supplied with power through direct current. According to the objective table, the grinding / polishing device and the temperature control method of the objective table provided by the embodiment of the invention, the loading and unloading process of the to-be-ground / polished wafer is more convenient, and the grinding / polishing effect of the wafer can be improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a stage, a grinding / polishing device and a temperature control method of the stage. Background Art

[0002] Semiconductor grinding / polishing is a key step in semiconductor wafer manufacturing. After the wafer to be ground / polished is fixed on the stage, the wafer fixed on the stage can be ground / polished. Grinding / polishing has the functions of removing excess material, improving surface flatness, accurately controlling thickness, and controlling surface damage.

[0003] At present, the conventional method of fixing the wafer is to use paraffin as an adhesive to stick the wafer on the stage. The specific operation is to preheat the stage through an external heating stage, and then apply the paraffin stick on the preheated stage, so that the paraffin melts on the stage surface to form a liquid paraffin layer. At this time, if Figure 1 As shown, Figure 1 The schematic diagram of the structure of using cold water to cool the stage in the prior art is as follows. The wafer to be ground / polished is placed on the paraffin layer, the oil-absorbing paper 18 is covered on the surface of the wafer, and the oil-absorbing paper 18, the wafer 5 and the stage 1 are compacted by the compacting block 17, and the stage is left to stand for a period of time at room temperature or in cold water 19 to cool the stage, the paraffin is cooled and solidified, and the wafer is adhered to the surface of the stage through the paraffin.

[0004] When the grinding / polishing process is completed, the wafer needs to be unloaded. Corresponding to the above-mentioned wafer fixing method, when unloading the wafer, the side of the stage away from the wafer is heated by an external heating table. The stage gradually heats up under the action of the external heat source. When the temperature is transferred to the paraffin layer, the paraffin layer on the stage melts into a liquid paraffin layer. At this time, the wafer is unloaded.

[0005] It can be seen that in the prior art, during the process of fixing and unloading wafers, the stage is heated by an external heating table, and the heat needs to be transferred across the thickness of the stage during heating; during cooling, it is necessary to cool naturally or cool in cold water to dissipate the heat, which makes the heating and cooling time too long.

[0006] In addition, during the grinding / polishing process, the temperature of the wafer surface will also affect the grinding / polishing effect, but the prior art lacks a method for controlling the wafer surface temperature during the grinding / polishing process. Summary of the invention

[0007] The purpose of the embodiment of the present invention is to provide a stage, a grinding / polishing device and a temperature control method of the stage to increase the speed of heating and cooling the stage. The specific technical solution is as follows:

[0008] The present application provides a stage, which comprises: an upper stage and a lower stage that are interlocked, wherein the top of the upper stage is used to carry a wafer;

[0009] A semiconductor refrigeration sheet is disposed between the upper half stage and the lower half stage, and is used to heat or cool the wafer;

[0010] A cable through hole is provided at the bottom of the lower half loading platform; the cable of the semiconductor refrigeration plate passes through the cable through hole and is powered by direct current.

[0011] In some embodiments of the present application, the stage further comprises an external temperature controller, and the external temperature controller is electrically connected to a cable of the semiconductor refrigeration sheet;

[0012] The external thermostat is powered by direct current.

[0013] In some embodiments of the present application, a cooling plate installation slot is provided between the upper half stage and the lower half stage;

[0014] The refrigeration plate mounting groove is arranged on the lower surface of the upper half stage; or, is arranged on the upper surface of the lower half stage; or, is partially arranged on the lower surface of the upper half stage and partially arranged on the upper surface of the lower half stage.

[0015] In some embodiments of the present application, the cable of the semiconductor refrigeration sheet includes: a positive cable and a negative cable, which are electrically connected to an external temperature controller;

[0016] The positive cable has a positive connection terminal, and the negative cable has a negative connection terminal;

[0017] The external temperature controller includes a positive electrode interface and a negative electrode interface;

[0018] When the semiconductor refrigeration chip is connected to the positive connection terminal of the positive cable and the positive interface of the external temperature controller, and the negative connection terminal of the negative cable is connected to the negative interface, the semiconductor refrigeration chip and the external temperature controller are in a positive connection state, and the side of the semiconductor refrigeration chip close to the upper half stage is in a cooling state, so as to cool down the upper half stage;

[0019] When the positive connecting terminal of the positive cable is connected to the negative interface of the external temperature controller, and the negative connecting terminal of the negative cable is connected to the positive interface, the semiconductor refrigeration chip and the external temperature controller are in reverse connection state, and the side of the semiconductor refrigeration chip close to the upper half of the loading platform is switched to the heating state to increase the temperature of the upper half of the loading platform.

[0020] In some embodiments of the present application, the external temperature controller further comprises a temperature measuring probe and a temperature measuring cable;

[0021] The external temperature controller is electrically connected to the temperature measuring probe via the temperature measuring cable;

[0022] The temperature measuring probe is arranged in close contact with the upper half of the stage, and is used to detect the temperature of the upper half of the stage, and transmit the measured temperature to the external temperature controller;

[0023] Based on the actual temperature measured by the temperature measuring probe and the set target temperature, manually controlling the positive connection state or the reverse connection state between the external temperature controller and the semiconductor refrigeration chip to control the semiconductor refrigeration chip close to the upper half stage to be in heating or cooling mode;

[0024] The external temperature controller is internally provided with a temperature control circuit; the temperature control circuit is used to control the temperature of the side of the semiconductor refrigeration plate close to the upper half stage based on the actual temperature measured by the temperature measuring probe and the set target temperature, and to approach the target temperature by dynamically adjusting the heating or cooling power.

[0025] In some embodiments of the present application, a reversing control circuit is provided inside the external temperature controller; the reversing control circuit is used to automatically control the direction of the output current of the external temperature controller based on the temperature measured by the temperature measuring probe and the set target temperature, so as to control the positive connection state or the reverse connection state between the external temperature controller and the semiconductor refrigeration plate, and finally control the semiconductor refrigeration plate close to the upper half of the loading platform to be in heating or cooling mode.

[0026] In some embodiments of the present application, the lower surface of the upper half stage is provided with a connection hole;

[0027] The lower half stage is provided with a connection hole;

[0028] The connection holes of the lower half stage are arranged correspondingly to the connection holes of the upper half stage.

[0029] In some embodiments of the present application, the external temperature controller is disposed on the lower surface of the lower half stage.

[0030] In some embodiments of the present application, the lower surface of the lower half stage is further provided with a temperature controller fixing hole;

[0031] The external thermostat is also provided with a thermostat mounting seat;

[0032] The temperature controller mounting seat is fixedly matched with the temperature controller fixing hole, and is used to fix the external temperature controller to the lower surface of the lower half stage.

[0033] The present application also provides a grinding / polishing device, which comprises:

[0034] A rotating table, the rotating table comprising: a rotating disk, the upper surface of which is provided with a grinding pad or a polishing pad;

[0035] The stage according to any one of the above embodiments, the stage is placed on the upper surface of the rotating disk;

[0036] The surface of the wafer mounted on the upper surface of the upper half stage of the stage is in contact with the upper surface of the grinding pad or the polishing pad.

[0037] In some embodiments of the present application, the grinding / polishing device further comprises: a mechanical swing arm;

[0038] The end of the mechanical swing arm is provided with a fixed ring;

[0039] The fixed ring is sleeved on the outer side of the stage;

[0040] The mechanical swing arm controls the fixed ring to drive the stage to move on the surface of the rotating table. A circular groove is provided on one side of the fixed ring close to the grinding pad or the polishing pad;

[0041] The annular through groove penetrates the fixing ring along the direction from the outer diameter of the fixing ring toward the inner diameter of the fixing ring.

[0042] The present application also provides a method for controlling the temperature of a stage, the specific method being:

[0043] During the loading process of the wafer, the temperature of the semiconductor cooling plate close to the upper stage is increased by an external temperature controller to melt the paraffin layer;

[0044] After the wafer is loaded on the upper surface of the upper stage, the external temperature controller controls the temperature of the semiconductor refrigeration plate close to the upper stage to solidify the paraffin layer;

[0045] During the unloading process of the wafer, the external temperature controller controls the temperature of the semiconductor refrigeration plate close to the upper stage to melt the paraffin layer.

[0046] In some embodiments of the present application, during the grinding / polishing process, the temperature of the semiconductor refrigerator is controlled by the external temperature controller so that the temperature of the upper stage and the wafer meets the temperature required for grinding / polishing.

[0047] Beneficial effects of the embodiments of the present invention:

[0048] The present invention provides a stage, a grinding / polishing device, and a stage temperature control method, wherein the stage is divided into an upper stage and a lower stage. A semiconductor cooling sheet is provided between the upper stage and the lower stage, and the paraffin layer coated on the upper surface of the upper stage is heated or cooled by the semiconductor cooling sheet.

[0049] During the wafer loading process, the temperature of the side of the semiconductor refrigeration plate close to the upper half of the loading platform is raised by artificial control, so that the paraffin layer on the upper surface of the upper half of the loading platform is melted; when the wafer is loaded on the upper surface of the upper half of the loading platform, the temperature of the semiconductor refrigeration plate is lowered by artificial control, so that the paraffin layer is solidified.

[0050] During the unloading process of the wafer, the temperature of the side of the semiconductor refrigeration plate close to the upper stage is raised by artificial control, so that the paraffin layer on the upper surface of the upper stage is melted.

[0051] During the loading and unloading process of the wafer, the stage is actively heated or cooled through the semiconductor cooling plate built into the stage, avoiding long waiting times and making the loading and unloading process of the wafers to be ground / polished more convenient.

[0052] Of course, it is not necessary to achieve all of the advantages described above at the same time to implement any product or method of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0053] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention. For ordinary technicians in this field, other embodiments can also be obtained based on these drawings.

[0054] Figure 1 It is a structural schematic diagram of using cold water to cool down the stage in the prior art;

[0055] Figure 2 A schematic diagram of the structure of the stage provided for this application;

[0056] Figure 3 for Figure 2 Exploded view of the upper and lower stages;

[0057] Figure 4 for Figure 3 Schematic diagram of the structure of the external temperature controller and semiconductor cooling chip;

[0058] Figure 5 It is a structural schematic diagram when the external temperature controller is fixed on the lower surface of the lower half stage;

[0059] Figure 6It is a schematic diagram of the structure when the semiconductor cooling piece is directly connected to the DC power supply;

[0060] Figure 7 A schematic diagram of the structure of the stage provided in this application when it is placed on a rotating table;

[0061] Figure 8 This is a side view of the stage when it is placed on the rotating table;

[0062] Fig. 9 A schematic diagram of the structure of the fixed ring provided for this application;

[0063] Fig.10a It is a schematic diagram of the structure when a paraffin layer is coated on the surface of the upper half stage;

[0064] Fig.10b It is a schematic diagram of the structure when the wafer is attached to the upper surface of the upper stage;

[0065] Fig.10c It is a schematic diagram of the structure when removing the wafer from the upper surface of the upper stage. BRIEF DESCRIPTION OF THE DRAWINGS

[0066] Stage 1, upper stage 11, cooling plate mounting groove 111, connecting hole 112, lower stage 12, cable through hole 121, thermostat fixing hole 122, semiconductor cooling plate 13, positive cable 131, negative cable 132, positive connecting terminal 133, negative connecting terminal 134, external thermostat 14, temperature measuring probe 141, temperature measuring cable 142, positive interface 143, negative interface 144, positive port 145, negative port 146, thermostat mounting seat 15, fixing screw 16, compacting block 17, oil absorbing paper 18, cold water 19;

[0067] Rotating table 2, rotating disk 21, grinding pad 22, polishing pad 23, rotating shaft 24;

[0068] Fixed ring 3, ring groove 31, mechanical swing arm 4, wafer 5, paraffin rod 6, paraffin layer 61, DC power supply 7. DETAILED DESCRIPTION

[0069] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field based on this application belong to the scope of protection of the present invention.

[0070] The present application provides a stage 1, such as Figure 2 and Figure 3 As shown, Figure 2A schematic diagram of the structure of the stage provided for this application; Figure 3 for Figure 2 Exploded view of the upper and lower stages. The upper stage 11 and the lower stage 12 are interlocked, wherein the top of the upper stage 11 is used to carry the wafer 5; the semiconductor cooling plate 13 is arranged between the upper stage 11 and the lower stage 12, and is used to heat or cool the wafer 5; the bottom of the lower stage 12 is provided with a cable through hole 121; the cable of the semiconductor cooling plate 13 passes through the cable through hole 121 and is powered by direct current.

[0071] In this embodiment, the stage 1 is divided into two parts: an upper stage 11 and a lower stage 12. A semiconductor refrigeration sheet 13 is provided between the upper stage 11 and the lower stage 12, and the paraffin layer 61 coated on the upper surface of the upper stage 11 is heated or cooled by the semiconductor refrigeration sheet 13.

[0072] During the wafer loading process, the semiconductor refrigeration plate 13 is manually controlled to form a reverse connection with the DC power supply 7, so that the temperature of the side close to the upper half stage 11 is increased, and the paraffin layer 61 on the upper surface of the upper half stage 11 is melted; when the wafer 5 is loaded on the upper surface of the upper half stage, the semiconductor refrigeration plate 13 is manually controlled to form a positive connection with the DC power supply 7, so that the temperature of the side close to the upper half stage 11 is reduced, and the paraffin layer 61 is solidified.

[0073] During the unloading process of the wafers, the semiconductor cooling plate 13 is manually controlled to be reversely connected with the DC power supply 7 to heat up the side close to the upper stage 11 and melt the paraffin layer 61 on the upper surface of the upper stage 11 .

[0074] Specifically, during the loading process, a paraffin layer 61 is coated on the upper surface of the upper stage 11 using a paraffin rod 6, and the temperature of the side of the semiconductor refrigeration plate 13 close to the upper stage 11 is increased by artificially controlling the temperature. When the paraffin layer 61 melts, the wafer 5 is placed on the upper surface of the upper stage 11. When the wafer 5 is bonded to the melted paraffin layer 61, the temperature of the side of the semiconductor refrigeration plate 13 close to the upper stage 11 is decreased by artificially controlling the temperature to solidify the paraffin layer 61. At this time, the wafer 5 is fixed to the upper surface of the upper stage 11 by the paraffin layer 61.

[0075] During the unloading process, the temperature of the semiconductor refrigeration plate 13 close to the upper stage 11 is raised manually to melt the paraffin layer 61 and unload the wafer 5 .

[0076] In the above-mentioned heating process, the heat transfer process is from the lower surface of the upper stage 11 to the upper surface of the upper stage 11, and the heat transfer distance is significantly reduced; at the same time, in the above-mentioned cooling process, the upper stage 11 is controlled to cool down autonomously by the semiconductor cooling sheet 13 so that the heat is lost quickly, so that the time of heating up and cooling is reduced. At the same time, the semiconductor cooling sheet 13 is used to cool down the upper stage 11 autonomously, avoiding the risk of the cold water 19 soaking the oil-absorbing paper 18 and overflowing the paraffin layer 61 when the cold water 19 is left to cool down, thereby affecting the adhesion effect of the wafer 5.

[0077] During the loading and unloading process of the wafers, the semiconductor cooling plate 13 built into the stage 1 is used to actively heat or cool the stage 1, thereby avoiding a long waiting time and making the loading and unloading process of the wafers to be ground / polished more convenient.

[0078] In some implementations of the present application, such as Figure 2 and Figure 3 As shown, the stage 1 may further include an external temperature controller 14, which is electrically connected to a cable of the semiconductor cooling sheet 13; the external temperature controller 14 is powered by direct current.

[0079] During the loading or unloading process, the external temperature controller 14 controls the semiconductor cooling plate 13 to increase or decrease the temperature of the paraffin layer 61 coated on the upper surface of the upper half stage 11 .

[0080] Meanwhile, during the grinding / polishing process, the semiconductor cooling plate 13 can be controlled by the external temperature controller 14 to keep the temperature of the stage 1 and the wafer 5 at a certain grinding / polishing temperature, thereby achieving the best grinding / polishing effect.

[0081] For details, see Figure 2 , the positive terminal 145 of the external temperature controller 14 is connected to the positive electrode of the DC power supply 7, and the negative terminal 146 is connected to the negative electrode. During the loading process, a paraffin layer 61 is coated on the upper surface of the upper half stage 11 using the paraffin rod 6, and the external temperature controller 14 controls the semiconductor cooling plate 13 to heat up on the side close to the upper half stage 11. When the paraffin layer 61 melts, the wafer 5 is placed on the upper surface of the upper half stage 11; when the wafer 5 is attached to the melted paraffin layer 61, the external temperature controller 14 controls the semiconductor cooling plate 13 to cool down on the side close to the upper half stage 11, so that the paraffin layer 61 solidifies. At this time, the wafer 5 is fixed to the upper surface of the upper half stage 11 by the paraffin layer 61.

[0082] During the unloading process, the external temperature controller 14 controls the temperature of the semiconductor cooling plate 13 close to the upper half stage 11 to melt the paraffin layer 61 and unload the wafer 5 .

[0083] At the same time, during the grinding / polishing process, in order to achieve the best grinding / polishing effect, the temperature of the stage 1 and the wafer 5 needs to be kept at a certain temperature, and the semiconductor refrigeration plate 13 is controlled by the external temperature controller 14 to heat or cool the stage 1 and the wafer 5 in real time.

[0084] In some implementations of the present application, such as Figure 3 As shown, a cooling fin mounting groove 111 is provided between the upper half stage 11 and the lower half stage 12; the cooling fin mounting groove 111 is provided on the lower surface of the upper half stage 11; or, is provided on the upper surface of the lower half stage 12; or, is partially provided on the lower surface of the upper half stage 11 and partially provided on the upper surface of the lower half stage 12.

[0085] In this embodiment, the semiconductor refrigeration chip 13 is installed in the refrigeration chip installation groove 111 through the refrigeration chip installation groove 111, providing a space for accommodating the semiconductor refrigeration chip 13. The semiconductor refrigeration chip 13 is fixed between the upper half stage 11 and the lower half stage 12, thereby preventing the semiconductor refrigeration chip 13 from moving during the grinding / polishing process.

[0086] In some implementations of the present application, such as Figures 2 to 5 As shown, Figure 4 for Figure 3 Schematic diagram of the structure of the external temperature controller and semiconductor cooling chip; Figure 5 The schematic diagram of the structure when the external temperature controller is fixed on the lower surface of the lower half stage. The cable of the semiconductor cooling plate 13 includes: a positive cable 131 and a negative cable 132, which are electrically connected to the external temperature controller 14; the positive cable 131 has a positive connection terminal 133, and the negative cable 132 has a negative connection terminal 134; the external temperature controller 14 includes a positive interface 143 and a negative interface 144; when the positive connection terminal 133 of the positive cable 131 is connected to the positive interface 143 of the external temperature controller 14, and the negative connection terminal 134 of the negative cable 132 is connected to the negative interface 144, the semiconductor cooling plate 13 3 is in a positive connection state with the external temperature controller 14, and the side of the semiconductor refrigeration sheet 13 close to the upper stage 11 is in a cooling state, so as to cool down the upper stage 11; when the positive connection terminal 133 of the positive cable 131 is connected to the negative interface 144 of the external temperature controller 14, and the negative connection terminal 134 of the negative cable 132 is connected to the positive interface 143, the semiconductor refrigeration sheet 13 and the external temperature controller 14 are in a reverse connection state, and the side of the semiconductor refrigeration sheet 13 close to the upper stage 11 is switched to a heating state, so as to heat up the upper stage 11.

[0087] In this embodiment, see Figure 2, the positive terminal 145 of the external thermostat 14 is connected to the positive electrode of the DC power supply 7, and the negative terminal 146 of the external thermostat is connected to the negative electrode of the DC power supply 7. The cable of the semiconductor refrigeration sheet 13 includes a positive cable 131 and a negative cable 132, and the external thermostat 14 has a positive interface 143 and a negative interface 144. When the positive connection terminal 133 of the positive cable 131 is connected to the positive interface 143, and the negative connection terminal 134 of the negative cable 132 is connected to the negative interface 144, the semiconductor refrigeration sheet 13 and the external thermostat 14 are in a positive connection state. The positive current flowing out of the positive electrode of the DC power supply 7 flows into the external temperature controller 14 through the positive electrode port 145, and flows into the semiconductor cooling chip 13 through the positive electrode cable 131 from the positive electrode interface 143; the negative current flowing out of the negative electrode of the DC power supply 7 flows into the external temperature controller 14 through the negative electrode port 146, and flows into the semiconductor cooling chip 13 through the negative electrode cable 132 from the negative electrode interface 144. At this time, the side of the semiconductor cooling chip 13 close to the upper half stage 11 is in a cooling state, and the semiconductor cooling chip 13 can cool the paraffin layer 61 to solidify it.

[0088] When the positive connection terminal 133 of the positive cable 131 is connected to the negative interface 144, and the negative connection terminal 134 of the negative cable 132 is connected to the positive interface 143, the positive current flowing out of the positive electrode of the DC power supply 7 flows into the external temperature controller 14 through the positive port 145, and flows into the semiconductor cooling chip 13 from the positive interface 143 through the negative cable 132; the negative current flowing out of the negative electrode of the DC power supply 7 flows into the external temperature controller 14 through the negative port 146, and flows into the semiconductor cooling chip 13 from the negative interface 144 through the positive cable 131. At this time, the side of the semiconductor cooling chip 13 close to the upper half stage 11 is in a heating state, and the semiconductor cooling chip 13 can heat the paraffin layer 61 to melt it.

[0089] In this embodiment, see Figure 6 , Figure 6 It is a schematic diagram of the structure when the semiconductor refrigeration piece is directly connected to the DC power supply 7. When the semiconductor refrigeration piece 13 is directly connected to the DC power supply 7. The positive cable 131 of the semiconductor refrigeration piece 13 is connected to the positive electrode of the DC power supply 7 through the positive connection terminal 133, and the negative cable 132 is connected to the negative electrode through the negative connection terminal 134. The side of the semiconductor refrigeration piece 13 close to the upper half stage 11 is in a cooling state, and the semiconductor refrigeration piece 13 can cool the paraffin layer 61 to solidify it.

[0090] When the positive cable 131 of the semiconductor refrigeration sheet 13 is connected to the negative pole of the DC power supply 7 through the positive connection terminal 133, and the negative cable 132 is connected to the positive pole through the negative connection terminal 134, the side of the semiconductor refrigeration sheet 13 close to the upper half of the stage 11 is in a heating state, and the semiconductor refrigeration sheet 13 can heat the paraffin layer 61 to melt it.

[0091] In some embodiments of the present application, the external temperature controller 14 also has a temperature measuring probe 141 and a temperature measuring cable 142; the external temperature controller 14 is electrically connected to the temperature measuring probe 141 through the temperature measuring cable 142; the temperature measuring probe 141 is arranged in close contact with the upper half stage 11, and is used to detect the temperature of the upper half stage 11, and transmit the measured temperature to the external temperature controller 14; based on the actual temperature measured by the temperature measuring probe 141 and the set target temperature, the positive connection state or the reverse connection state between the external temperature controller 14 and the semiconductor refrigeration plate 13 is manually controlled to control the side of the semiconductor refrigeration plate 13 close to the upper half stage 11 to be in heating or cooling mode; a temperature control circuit is arranged inside the external temperature controller 14; the temperature control circuit is used to control the temperature of the side of the semiconductor refrigeration plate 13 close to the upper half stage 11 based on the actual temperature of the upper half stage 11 measured by the temperature measuring probe 141 and the set target temperature, so as to be close to the target temperature by dynamically adjusting the heating or cooling power. A reversing control circuit is provided inside the external temperature controller 14; the reversing control circuit is used to automatically control the direction of the output current of the external temperature controller 14 based on the temperature measured by the temperature measuring probe 141 and the set target temperature, so as to control the positive connection state or the reverse connection state between the external temperature controller 14 and the semiconductor refrigeration plate 13, and finally control the semiconductor refrigeration plate 13 to be in heating or cooling mode on the side close to the upper half of the loading platform 11.

[0092] See also Figure 3 and Figure 5 One end of the temperature measuring cable 142 is connected to the temperature measuring probe 141, and the other end is connected to the external temperature controller 14. The temperature measuring probe 141 is attached to the upper stage 11 to measure the temperature of the upper stage 11 in real time. The temperature measuring cable 142 can transmit the temperature of the upper stage 11 measured by the temperature measuring probe 141 to the external temperature controller 14.

[0093] Also, see Figure 2 The surface of the external temperature controller 14 has a data display screen. Among them, "PV" is the real-time temperature measured by the temperature probe 141; "SV" is the preset temperature; "SET" is the temperature setting button. During use, the preset temperature is set by "-" and "+" as needed.

[0094] As mentioned above, the positive terminal 145 of the external temperature controller 14 is connected to the positive electrode of the DC power supply 7, and the negative terminal 146 is connected to the negative electrode. Based on the actual temperature measured by the temperature probe 141 and the set target temperature, the positive or reverse connection state between the external temperature controller 14 and the semiconductor refrigeration plate 13 is manually controlled, thereby controlling the semiconductor refrigeration plate 13 to be in heating or cooling mode on the side close to the upper half of the stage. When the side 13 of the semiconductor refrigeration piece close to the upper half stage 11 needs to be cooled, the positive connection terminal 133 of the positive cable 131 is manually connected to the positive interface 143 of the external temperature controller 14, so that the positive current flows out from the positive interface 143 of the external temperature controller 14 and is transmitted to the positive cable 131 of the semiconductor refrigeration piece 13; at the same time, the negative connection terminal 134 of the negative cable 132 is connected to the negative interface 144 of the external temperature controller 14, so that the negative current flows out from the negative interface 144 of the external temperature controller 14 and is transmitted to the negative cable 132 of the semiconductor refrigeration piece 13, so that a positive connection is formed between the external temperature controller 14 and the semiconductor refrigeration piece 13. At this time, the side of the semiconductor refrigeration piece 13 close to the upper half stage 11 is switched to the cooling mode. Then, through the temperature control circuit inside the external temperature controller 14, the temperature of the side of the semiconductor refrigeration piece 13 close to the upper half stage is controlled to gradually approach the target temperature by dynamically adjusting the cooling power.

[0095] When the side of the semiconductor refrigeration plate 13 close to the upper half stage 11 needs to be heated, the negative connection terminal 134 of the negative cable 132 is manually connected to the positive interface 143 of the external thermostat 14, so that the positive current flows out from the positive interface 143 of the external thermostat 14 and is transmitted to the negative cable 132 of the semiconductor refrigeration plate 13; at the same time, the positive connection terminal 133 of the positive cable 131 is connected to the negative interface 144 of the external thermostat 14, and the negative current flows out from the negative interface 144 of the external thermostat 14 and is transmitted to the positive cable 131 of the semiconductor refrigeration plate 13, so that the external thermostat 14 and the semiconductor refrigeration plate 13 are reversely connected. At this time, the side of the semiconductor refrigeration plate 13 close to the upper half stage 11 is switched to the heating mode. Then, through the temperature control circuit inside the external thermostat 14, the temperature of the side of the semiconductor refrigeration plate 13 close to the upper half stage is controlled to gradually approach the target temperature by dynamically adjusting the heating power.

[0096] The temperature of the semiconductor refrigeration chip 13 on the side close to the upper half stage 11 is controlled by the temperature control circuit to approach the target temperature by dynamically adjusting the heating or cooling power. When the semiconductor refrigeration chip 13 is directly connected to the external temperature controller 14, and the actual temperature measured by the temperature controller is higher than the set target temperature, the temperature control circuit controls the semiconductor refrigeration chip 13 to increase the power, so that the side of the semiconductor refrigeration chip 13 close to the upper half stage 11 is cooled. When the actual temperature measured by the temperature controller is lower than the set target temperature, the temperature control circuit controls the semiconductor refrigeration chip 13 to reduce the power, and heats the paraffin layer 61 or the wafer 5 through the ambient temperature, so that it gradually heats up.

[0097] When the semiconductor refrigeration chip 13 is reversely connected to the external temperature controller 14, and the actual temperature measured by the temperature controller is higher than the set target temperature, the temperature control circuit controls the semiconductor refrigeration chip 13 to reduce the power, and cools the paraffin layer 61 or the wafer 5 through the ambient temperature to gradually cool it down. When the actual temperature measured by the temperature controller is lower than the set target temperature, the temperature control circuit controls the semiconductor refrigeration chip 13 to increase the power, so that the semiconductor refrigeration chip 13 is heated on the side close to the upper half stage 11.

[0098] When an external temperature controller 14 dedicated to the semiconductor refrigeration plate 13 is used, the external temperature controller 14 is also equipped with a reversing control circuit. The reversing control circuit can automatically control the circuit to change the current flow direction according to the size relationship between the actual temperature and the target temperature, so that the semiconductor refrigeration plate 13 switches between the heating mode and the cooling mode. During the loading process of the wafer 5, the preset temperature is set to a temperature higher than the melting temperature of the paraffin layer 61, and the external temperature controller 14 compares the actual temperature measured by the temperature measuring probe 141 with the preset target temperature. Among them, when the actual temperature is lower than the preset target temperature, the side of the semiconductor refrigeration plate 13 close to the upper half stage 11 needs to be heated. At this time, the reversing control circuit inside the external temperature controller 14 controls the current flow direction, so that the positive current flows out from the negative interface 144 and is transmitted to the negative cable 131 of the semiconductor refrigeration plate 13; the negative current flows out from the positive interface 143 and is transmitted to the positive cable 131 of the semiconductor refrigeration plate 13, so that the external temperature controller 14 and the semiconductor refrigeration plate 13 are reversely connected. At this time, the side of the semiconductor refrigeration plate 13 close to the upper half of the loading platform 11 is switched to the heating mode, and then the temperature of the side of the semiconductor refrigeration plate 13 close to the upper half of the loading platform 11 is controlled by the temperature control circuit inside the external temperature controller 14 to gradually approach the target temperature by dynamically adjusting the heating power, thereby heating the paraffin layer 61 to melt it.

[0099] After the wafer 5 is loaded onto the upper surface of the upper stage 11, the preset target temperature is set to a temperature lower than the solidification temperature of the paraffin layer 61. When the actual temperature exceeds the preset target temperature, the side of the semiconductor refrigeration plate 13 close to the upper stage 11 needs to be cooled. At this time, the switching control circuit inside the external temperature controller 14 changes the current flow direction, so that the positive current flows out from the positive interface 143 of the external temperature controller 14 and is transmitted to the positive cable 131 of the semiconductor refrigeration plate 13; the negative current flows out from the negative interface 144 of the external temperature controller 14 and is transmitted to the negative cable 132 of the semiconductor refrigeration plate 13, so that a positive connection is formed between the external temperature controller 14 and the semiconductor refrigeration plate 13. At this time, the side of the semiconductor refrigeration plate 13 close to the upper half of the stage 11 is switched to the cooling mode, and then the temperature of the side of the semiconductor refrigeration plate 13 close to the upper half of the stage is controlled by the temperature control circuit inside the external temperature controller 14 to gradually approach the target temperature by dynamically adjusting the cooling power, thereby cooling the paraffin layer 61 and solidifying it.

[0100] During the grinding / polishing process, the preset temperature is set as the optimal temperature required for the grinding / polishing process. When the measured temperature exceeds the preset target temperature, the side of the semiconductor refrigeration plate 13 close to the upper half stage 11 needs to be cooled. At this time, the reversing control circuit inside the external temperature controller 14 changes the current flow direction, so that the positive current flows out from the positive terminal 143 of the external temperature controller 14 and is transmitted to the positive cable 131 of the semiconductor refrigeration plate 13; the negative current flows out from the negative terminal 144 of the external temperature controller 14 and is transmitted to the negative cable 132 of the semiconductor refrigeration plate 13, so that a positive connection is formed between the external temperature controller 14 and the semiconductor refrigeration plate 13. At this time, the side of the semiconductor refrigeration plate 13 close to the upper half stage 11 is switched to the cooling mode, and then the temperature of the side of the semiconductor refrigeration plate 13 close to the upper half stage is controlled by the temperature control circuit inside the external temperature controller 14 to gradually approach the target temperature by dynamically adjusting the cooling power, so as to cool the wafer 5.

[0101] When the measured temperature is lower than the preset target temperature, the side of the semiconductor refrigeration plate 13 close to the upper stage 11 needs to be heated. At this time, the reversing control circuit inside the external temperature controller 14 controls the current flow direction, so that the positive current flows out from the negative terminal 144 and is transmitted to the negative cable 132 of the semiconductor refrigeration plate 13; the negative current flows out from the positive terminal 143 and is transmitted to the positive cable 131 of the semiconductor refrigeration plate 13, so that the external temperature controller 14 and the semiconductor refrigeration plate 13 are reversely connected. At this time, the side of the semiconductor refrigeration plate 13 close to the upper stage 11 is switched to the heating mode, and then the temperature control circuit inside the external temperature controller 14 controls the temperature of the side of the semiconductor refrigeration plate 13 close to the upper stage to gradually approach the target temperature by dynamically adjusting the heating power, and heats the wafer 5, so that the temperature of the wafer 5 always meets the optimal temperature required for grinding / polishing.

[0102] During the unloading process of the wafer 5, the preset temperature is set to a temperature higher than the melting temperature of the paraffin layer 61. When the measured temperature is lower than the preset target temperature, the side of the semiconductor refrigeration plate 13 close to the upper half stage 11 needs to be heated. At this time, the reversing control circuit inside the external temperature controller 14 controls the current flow direction, so that the positive current flows out from the negative electrode interface 144 and is transmitted to the negative electrode cable 132 of the semiconductor refrigeration plate 13; the negative current flows out from the positive electrode interface 143 and is transmitted to the positive electrode cable 131 of the semiconductor refrigeration plate 13, so that the external temperature controller 14 and the semiconductor refrigeration plate 13 are reversely connected. At this time, the side of the semiconductor refrigeration plate 13 close to the upper half stage 11 is switched to the heating mode, and then the temperature control circuit inside the external temperature controller 14 controls the temperature of the side of the semiconductor refrigeration plate 13 close to the upper half stage to gradually approach the target temperature by dynamically adjusting the heating power, so as to heat the paraffin layer 61 and melt it.

[0103] In this embodiment, the external temperature controller 14 realizes automatic temperature regulation through the coordinated action of the temperature control circuit, the switching control circuit, the temperature measuring probe 141 and the temperature measuring cable 142 .

[0104] In actual production, the external temperature controller 14 can be powered by connecting to an external power source through a cable, or by a built-in power source inside the external temperature controller 14. The cooling state and heating state of the semiconductor cooling plate 13 close to the upper half stage 11 can be adjusted manually.

[0105] In some implementations of this application. Figures 2 to 5 As shown, the lower surface of the upper half stage 11 is provided with a connection hole 112; the lower half stage 12 is provided with a connection hole 112; the connection hole 112 of the lower half stage 12 is provided corresponding to the connection hole 112 of the upper half stage 11. The external thermostat 14 is provided on the lower surface of the lower half stage 12. The lower surface of the lower half stage 12 is also provided with a thermostat fixing hole 122; the external thermostat 14 is also provided with a thermostat mounting seat 15; the thermostat mounting seat 15 is fixedly matched with the thermostat fixing hole 122, and is used to fix the external thermostat 14 to the lower surface of the lower half stage 12.

[0106] In this embodiment, the upper half stage 11 and the lower half stage 12 are fixedly connected via the connecting hole 112 , and the fixing screws 16 pass through the connecting hole 112 between the upper half stage 11 and the lower half stage 12 , so that the upper half stage 11 and the lower half stage 12 are fixedly connected.

[0107] A thermostat fixing hole 122 is also provided on the lower surface of the lower half stage 12, and a thermostat mounting seat 15 is also provided on the external thermostat 14. During use, the thermostat fixing hole 122 and the thermostat mounting seat 15 are fixedly arranged correspondingly, and the two are fixedly matched by screws, so that the external thermostat 14 is fixed to the lower surface of the lower half stage 12. During the grinding / polishing process, since the thermostat fixing hole 122 and the thermostat mounting seat 15 are fixedly matched, the external thermostat 14 will not move, thereby avoiding the situation where the external thermostat 14 is dislodged due to rotation.

[0108] The present application also provides a grinding / polishing device, such as Figure 7 and Figure 8 As shown, Figure 7 A schematic diagram of the structure of the stage provided in this application when it is placed on a rotating table; Figure 8 It is a side view when the stage is placed on the rotating table. The grinding / polishing device includes: a rotating table 2, including: a rotating disk 21, the upper surface of which is provided with a grinding pad 22 or a polishing pad 23; the stage 1 of any one of the above embodiments, the stage 1 is placed on the upper surface of the rotating disk 21; the surface of the wafer 5 on the upper surface of the upper half stage 11 installed in the stage 1 is attached to the upper surface of the grinding pad 22 or the polishing pad 23. The grinding / polishing device also includes: a mechanical swing arm 4; a fixed ring 3 is provided at the end of the mechanical swing arm 4; the fixed ring 3 is sleeved on the outer side of the stage 1; the mechanical swing arm 4 controls the fixed ring 3 to drive the stage 1 to move on the surface of the rotating table 2.

[0109] In this embodiment, a grinding pad 22 or a polishing pad 23 is disposed on the upper surface of the rotating disk 21, and the stage 1 is placed on the upper surface of the rotating disk 21, and the surface of the wafer 5 loaded on the stage 1 is attached to the upper surface of the grinding pad 22 or the polishing pad 23. Figure 8 When the stage 1 is placed stably, the wafer 5 is located between the stage 1 and the grinding pad 22 or the polishing pad 23 , and the weight of the stage 1 makes the wafer 5 fully contact with the grinding pad 22 or the polishing pad 23 .

[0110] At the same time, the inner diameter of the fixed ring 3 is larger than the diameter of the stage 1, so that the fixed ring 3 can be mounted on the outside of the stage 1 and fixedly connected to the mechanical swing arm 4. The mechanical swing arm 4 controls the fixed ring 3 to drive the stage 1 to move horizontally on the surface of the rotating table 2 to achieve grinding / polishing of the wafer 5.

[0111] Specifically, when the stage 1 is placed on the rotating stage 2, and the fixed ring 3 is sleeved on the outer side of the stage 1, the rotating shaft 24 rotates, driving the rotating disk 21 to rotate. Figure 7As shown, the stage 1 is located at a position deviating from the center of the rotating disk 21. It can be understood that the linear velocity of the position with a long diameter is large, and the linear velocity of the position with a diameter section is small. Since the linear velocities of the positions on both sides of the stage 1 are different, the stage 1 rotates. At the same time, the mechanical swing arm 4 controls the fixed ring 3 to drive the stage 1 to move on the surface of the rotating table 2, so that the friction between the wafer 5 and the grinding pad 22 or the polishing pad 23 is more sufficient, thereby achieving grinding / polishing of the wafer 5.

[0112] In some implementations of the present application, such as Fig. 9 As shown, Fig. 9 The structural diagram of the fixed ring provided in the present application is as follows. A circular groove 31 is provided on one side of the fixed ring 3 close to the grinding pad 22 or the polishing pad 23; the circular groove 31 penetrates the fixed ring 3 along the outer diameter of the fixed ring 3 toward the inner diameter of the fixed ring 3.

[0113] In this embodiment, when grinding / polishing is performed, the grinding / polishing liquid enters the fixed ring 3 through the annular groove 31 to assist the grinding / polishing of the wafer 5 .

[0114] The present application also provides a method for controlling the temperature of a stage, the specific steps of which are:

[0115] During the loading process of the wafer 5, the external temperature controller 14 controls the temperature of the semiconductor cooling plate 13 close to the upper half stage 11 to melt the paraffin layer 61;

[0116] After the wafer 5 is loaded onto the upper surface of the upper stage 11, the external temperature controller 14 controls the semiconductor cooling plate 13 to cool down the side close to the upper stage 11, so that the paraffin layer 61 solidifies;

[0117] During the unloading process of the wafer 5 , the external temperature controller 14 controls the temperature of the semiconductor cooling plate 13 close to the upper stage 11 to increase, so that the paraffin layer 61 melts.

[0118] In this embodiment, Figures 10a to 10c As shown, Fig.10a It is a schematic diagram of the structure when a paraffin layer is coated on the surface of the upper half stage; Fig.10b It is a schematic diagram of the structure when the wafer is attached to the upper surface of the upper stage; Fig.10c When an external temperature controller 14 without a switching control circuit is used, the connection relationship between the positive cable 131 and the negative cable 132 of the semiconductor refrigeration plate 13 and the positive interface 143 and the negative interface 144 of the external temperature controller 14 can be manually adjusted to switch the semiconductor refrigeration plate 13 between the heating mode and the cooling mode.

[0119] For details, see Fig.10a, firstly, a paraffin layer 61 is coated on the upper surface of the upper stage 11. Then, the positive cable 131 is connected to the negative interface 144 of the external thermostat 14 through the positive connection terminal 133, and the negative cable 132 is connected to the positive interface 143 of the external thermostat 14 through the negative connection terminal 134, so that the semiconductor refrigeration sheet 13 is reversely connected and switched to the heating mode. At this time, the side of the semiconductor refrigeration sheet 13 close to the upper stage 11 heats the paraffin layer 61, so that the paraffin layer 61 melts.

[0120] Then, the wafer 5 is bonded to the melted paraffin layer 61. Fig.10b After the wafer 5 is attached, the positive cable 131 is connected to the positive interface 143 of the external temperature controller 14 through the positive connection terminal 133, and the negative cable 132 is connected to the negative interface 144 of the external temperature controller 14 through the negative connection terminal 134, so that the semiconductor refrigeration plate 13 is positively connected and switched to the cooling mode. At this time, the side of the semiconductor refrigeration plate 13 close to the upper half stage 11 cools the paraffin layer 61, solidifies the paraffin layer 61, and thus fixes the wafer 5.

[0121] Finally, see Fig.10c After the grinding / polishing process is completed, the positive cable 131 is connected to the negative interface 144 of the external temperature controller 14 through the positive connection terminal 133, and the negative cable 132 is connected to the positive interface 143 of the external temperature controller 14 through the negative connection terminal 134, so that the semiconductor refrigeration plate 13 is reversely connected and switched to the heating mode. At this time, the side of the semiconductor refrigeration plate 13 close to the upper half stage 11 heats the paraffin layer 61, so that the paraffin layer 61 melts, so as to unload the wafer 5.

[0122] When an external temperature controller 14 with a reversing control circuit is used, the positive connection state or the reverse connection state of the semiconductor refrigeration plate 13 can be automatically switched according to the actual temperature and the preset temperature. First, a paraffin layer 61 is coated on the upper surface of the upper half stage 11, and then the semiconductor refrigeration plate 13 is controlled by the external temperature controller 14 to heat the paraffin layer 61 so that the paraffin layer 61 melts. At this time, the wafer 5 is attached to the melted paraffin layer 61. After the wafer 5 is attached, the semiconductor refrigeration plate 13 is controlled by the external temperature controller 14 to cool down so that the paraffin layer 61 solidifies, thereby fixing the wafer 5. After grinding / polishing is completed, the semiconductor refrigeration plate 13 is controlled by the external temperature controller 14 to heat the paraffin layer 61 so that the paraffin layer melts, and the wafer 5 is removed.

[0123] During the grinding / polishing process, the external temperature controller 14 controls the semiconductor cooling plate 13 to control the temperature of the upper stage 11 so that the temperature of the upper stage 11 and the wafer 5 meets the temperature required for grinding / polishing.

[0124] In some implementations of the present application, during the grinding / polishing process, the temperature of the semiconductor refrigerator 13 is controlled by an external temperature controller 14 so that the temperature of the upper stage 11 and the wafer 5 meets the temperature required for grinding / polishing.

[0125] During the temperature adjustment process, the temperature control circuit inside the external temperature controller 14 controls the semiconductor cooling plate 13 to perform dynamic power adjustment so that the actual temperature is close to the preset temperature.

[0126] In the above embodiment, the method in which the external temperature controller 14 controls the cooling and heating of the semiconductor refrigeration plate 13 is the same as that in the previous embodiment, and the technical effects achieved are also the same, so no further elaboration is given here.

[0127] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0128] Each embodiment in this specification is described in a related manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0129] The above description is only a preferred embodiment of the present invention and is not intended to limit the protection scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.

Claims

1. A stage, characterized in that: include: An upper half stage (11) and a lower half stage (12) that are interlocked, wherein the top of the upper half stage (11) is used to carry a wafer (5); A semiconductor cooling sheet (13) is arranged between the upper half loading platform (11) and the lower half loading platform (12), and is used to heat or cool the wafer (5); A cable through hole (121) is provided at the bottom of the lower half loading platform (12); a cable of the semiconductor cooling plate (13) passes through the cable through hole (121) and is powered by direct current.

2. The stage according to claim 1, characterized in that: The loading platform (1) further comprises an external temperature controller (14), wherein the external temperature controller (14) is electrically connected to a cable of the semiconductor cooling sheet (13); The external temperature controller (14) is powered by direct current.

3. The stage according to claim 1, characterized in that: A cooling fin mounting groove (111) is provided between the upper half loading platform (11) and the lower half loading platform (12); The refrigeration plate mounting groove (111) is arranged on the lower surface of the upper half loading platform (11); or, is arranged on the upper surface of the lower half loading platform (12); or, is partially arranged on the lower surface of the upper half loading platform (11) and partially arranged on the upper surface of the lower half loading platform (12).

4. The stage according to claim 2, characterized in that: The cable of the semiconductor refrigeration sheet (13) comprises: a positive cable (131) and a negative cable (132), which are electrically connected to an external temperature controller (14); The positive cable (131) has a positive connection terminal (133), and the negative cable (132) has a negative connection terminal (134); The external temperature controller (14) comprises a positive electrode interface (143) and a negative electrode interface (144); When the positive connection terminal (133) of the positive cable (131) of the semiconductor refrigeration sheet (13) is connected to the positive interface (143) of the external temperature controller (14), and the negative connection terminal (134) of the negative cable (132) is connected to the negative interface (144), the semiconductor refrigeration sheet (13) and the external temperature controller (14) are in a positive connection state, and the side of the semiconductor refrigeration sheet (13) close to the upper stage (11) is in a cooling state, thereby cooling the upper stage (11); When the positive connection terminal (133) of the positive cable (131) is connected to the negative interface (144) of the external temperature controller (14), and the negative connection terminal (134) of the negative cable (132) is connected to the positive interface (143), the semiconductor cooling plate (13) and the external temperature controller (14) are in a reverse connection state, and the side of the semiconductor cooling plate (13) close to the upper half stage (11) is switched to a heating state, thereby heating the upper half stage (11).

5. The stage according to claim 4, characterized in that: The external temperature controller (14) further comprises a temperature measuring probe (141) and a temperature measuring cable (142); The external temperature controller (14) is electrically connected to the temperature measuring probe (141) via the temperature measuring cable (142); The temperature measuring probe (141) is arranged in close contact with the upper half stage (11) and is used to detect the temperature of the upper half stage (11) and transmit the measured temperature to the external temperature controller (14); Based on the actual temperature measured by the temperature measuring probe (141) and the set target temperature, manually controlling the positive connection state or the reverse connection state between the external temperature controller (14) and the semiconductor refrigeration plate (13) to control the side of the semiconductor refrigeration plate (13) close to the upper half stage (11) to be in heating or cooling mode; The external temperature controller (14) is provided with a temperature control circuit therein; the temperature control circuit is used to control the temperature of a side of the semiconductor cooling plate (13) close to the upper half stage (11) based on the actual temperature measured by the temperature measuring probe (141) and the set target temperature, so as to approach the target temperature by dynamically adjusting the heating or cooling power.

6. The stage according to claim 5, characterized in that: The external temperature controller (14) is provided with a reversing control circuit inside; the reversing control circuit is used to automatically control the direction of the output current of the external temperature controller (14) based on the temperature measured by the temperature measuring probe (141) and the set target temperature, so as to control the positive connection state or the reverse connection state between the external temperature controller (14) and the semiconductor refrigeration plate (13), and finally control the side of the semiconductor refrigeration plate (13) close to the upper half stage (11) to be in heating mode or cooling mode.

7. The stage according to claim 1, characterized in that: The lower surface of the upper half stage (11) is provided with a connection hole (112); The lower half loading platform (12) is provided with a connecting hole (112); The connection hole (112) of the lower half loading platform (12) is arranged corresponding to the connection hole (112) of the upper half loading platform (11).

8. The stage according to claim 2, characterized in that: The external temperature controller (14) is arranged on the lower surface of the lower half loading platform (12).

9. The stage according to claim 8, characterized in that: The lower surface of the lower half loading platform (12) is also provided with a temperature controller fixing hole (122); The external thermostat (14) is also provided with a thermostat mounting seat (15); The temperature controller mounting seat (15) is fixedly matched with the temperature controller fixing hole (122) and is used to fix the external temperature controller (14) to the lower surface of the lower half loading platform (12).

10. A grinding / polishing device, characterized in that: include: The rotating table (2) comprises: a rotating disk (21), wherein a grinding pad (22) or a polishing pad (23) is arranged on the upper surface of the rotating disk (21); The stage (1) according to any one of claims 1 to 9, wherein the stage (1) is placed on the upper surface of the rotating disk (21); The surface of the wafer (5) mounted on the upper surface of the upper half stage (11) in the stage (1) is bonded to the upper surface of the grinding pad (22) or the polishing pad (23).

11. The grinding / polishing device according to claim 10, characterized in that: The grinding / polishing device further comprises: a mechanical swing arm (4); A fixed ring (3) is provided at the end of the mechanical swing arm (4); The fixed ring (3) is sleeved on the outer side of the loading platform (1); The mechanical swing arm (4) controls the fixed ring (3) to drive the object carrier (1) to move on the surface of the rotating platform (2).

12. The grinding / polishing device according to claim 10, characterized in that: A circular through groove (31) is provided on one side of the fixed circular ring (3) close to the grinding pad (22) or the polishing pad (23); The annular through groove (31) penetrates the fixed circular ring (3) in a direction from the outer diameter of the fixed circular ring (3) toward the inner diameter of the fixed circular ring (3).

13. A method for controlling the temperature of a stage, characterized in that: During the loading process of the wafer (5), the temperature of the semiconductor cooling plate (13) close to the upper half of the loading platform (11) is increased by controlling the external temperature controller (14) to melt the paraffin layer (61); When the wafer (5) is loaded onto the upper surface of the upper stage (11), the external temperature controller (14) controls the temperature of the semiconductor cooling plate (13) close to the upper stage (11) to solidify the paraffin layer (61); During the unloading process of the wafer (5), the external temperature controller (14) controls the temperature of the side of the semiconductor cooling plate (13) close to the upper half stage (11) to be raised, so that the paraffin layer (61) is melted.

14. The temperature control method according to claim 13, characterized in that: During the grinding / polishing process, the temperature of the semiconductor cooling plate (13) is controlled by the external temperature controller (14) so ​​that the temperature of the upper stage (11) and the wafer (5) meets the temperature required for grinding / polishing.

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