An optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials

Abstract

The present invention relates to an optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials and its use. The optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials of the present invention comprises a surface cleaning step, a scanning electron microscope imaging step, a dual-beam alignment adjustment step, and an etching step. In the etching step, ion beam processing and electron beam imaging work simultaneously. The electron beam imaging is turned on after a preset processing pattern and before the ion beam starts processing, and is quickly turned off after the processing is completed. The optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials of the present invention can avoid deformation of the material due to heat generated by high-energy particle beam bombardment, thereby reducing performance, while maintaining the reliability of the etching process.

Description

Technical Field

[0001] The present disclosure belongs to the field of high-energy beam micro-nano processing, and specifically relates to an optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials. Background Art

[0002] Amid the rapid advancements in materials science and technology, the FIB-SEM dual-beam system, a combination of a focused ion beam (FIB) and a scanning electron microscope (SEM), offers a high-precision, high-resolution solution for micro- and nanofabrication of materials. This system not only enables imaging of the material's microstructure but also enables precise processing operations such as etching and deposition using the ion beam, while the SEM monitors the machining process in real time to ensure accuracy. Furthermore, due to its non-contact processing, high precision, and robust controllability, the FIB-SEM dual-beam system has become a crucial tool for fabricating complex material structures.

[0003] However, flexible materials can experience deformation and performance degradation during FIB-SEM processing. Therefore, optimizing the dual-beam simultaneous processing method using a focused ion beam-scanning electron microscope system to achieve efficient and high-precision material processing while maintaining the original material properties is of great significance for promoting the application of materials in flexible electronic devices, wearable devices, biomedical materials and other fields. Summary of the Invention

[0004] The inventors of this application have discovered that when processing flexible materials using a focused ion beam-scanning electron microscope (FIB-SEM) dual-beam simultaneous processing, the irradiation of the high-energy charged particle beam can cause deformation of the material, resulting in reduced processing performance. The inventors have discovered that some material deformation is due to poor thermal conductivity. During processing, heat from the ion beam accumulates on the material surface, causing thermal deformation and performance degradation.

[0005] In response to this problem, the inventors of the present application have found after repeated research and experiments that by adopting the method of using a focused ion beam-scanning electron microscope dual beam synchronous controllable processing of flexible materials, regulating the dual beam parameters and processing process, and optimizing the processing method, it is possible to achieve high-quality processing of materials and promote the application expansion of the focused ion beam-scanning electron microscope dual beam system in more fields. In particular, by performing focused ion beam etching processing by simultaneously operating ion beam processing and electron beam imaging in the etching step, and turning on electron beam imaging after the preset processing pattern and before the ion beam starts processing, and quickly turning off after the processing is completed, the local thermal effect of the electron beam is smaller than that of the ion beam. Turning on electron beam imaging after the preset processing pattern and before the ion beam starts processing can reduce the initial stress accumulation inside the sample. When the ion beam is subsequently turned on for processing, due to the real-time monitoring and feedback of the electron beam, the processing process can be more accurately controlled, reducing the additional stress caused by improper processing that causes the material to be deformed by heat, and improving the quality of the formed pattern.

[0006] In order to achieve the above-mentioned purpose, the present invention includes the following technical solutions.

[0007] On the one hand, the present invention provides an optimization method for FIB (focused ion beam)-SEM (scanning electron microscope) dual beam synchronous controllable processing of flexible materials, wherein the thermal conductivity of the material is less than 0.2 W / mK,

[0008] The method comprises the following steps:

[0009] Surface cleaning step: a step of cleaning the surface of the material by chemical or physical methods;

[0010] Scanning electron microscope imaging step: placing the material in a sample chamber of a FIB-SEM dual-beam microscope, adjusting the acceleration voltage and beam current of the scanning electron microscope to perform surface imaging, selecting feature points / markers and adjusting the electrical parameters of the objective lens to achieve clear imaging at different magnifications, and obtaining initial surface morphology information of the material;

[0011] Dual-beam centering adjustment step: on the basis of clear imaging of the material by a scanning electron microscope, adjusting the acceleration voltage and beam current of the focused ion beam to perform ion beam imaging, finding characteristic points / marks and adjusting the electrical parameters of the electrostatic lens to achieve clear imaging at different magnifications, then repeatedly switching the imaging windows of the focused ion beam and the scanning electron microscope to ensure that the characteristic points / marks are located at the center of the field of view of the FIB image and the SEM image respectively at the same magnification, finding the junction point of the focused ion beam, the scanning electron microscope and the material, and achieving dual-beam centering adjustment;

[0012] Etching step: According to the preset processing pattern, the focused ion beam scanning mode, dosage and processing time as well as the scanning mode of the scanning electron microscope are adjusted. The processing area is imaged by the scanning electron microscope to observe the processing process and morphology changes in real time while the focused ion beam is used for etching.

[0013] In the etching step, ion beam processing and electron beam imaging work simultaneously, and electron beam imaging is turned on after the preset processing pattern and before the ion beam processing begins.

[0014] In the etching step, the electron beam imaging is quickly turned off after the ion beam processing is completed.

[0015] In some embodiments of the optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials, preferably, in the aforementioned etching step, the operating voltage of the focused ion beam is 0.5kV to 30kV, and the operating beam current of the focused ion beam is controlled between 10pA and 100pA.

[0016] In some embodiments of the optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials, preferably, in the aforementioned etching step, the operating voltage of the electron beam is 0.5kV to 15kV, and the operating beam current of the electron beam is 30pA to 10nA.

[0017] In some embodiments of the optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials, preferably, the type of the aforementioned focused ion beam is gallium ions.

[0018] In some embodiments of the optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials, preferably, it also includes: a step of gold plating the surface of the material before the aforementioned scanning electron microscope imaging step.

[0019] In some embodiments of the optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials, preferably, the aforementioned material is a polymer.

[0020] In some embodiments of the optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials, preferably, the aforementioned polymer is polydimethylsiloxane or polymethyl methacrylate.

[0021] On the other hand, the present invention also provides the use of the aforementioned FIB-SEM dual-beam synchronous controllable processing method for flexible materials in material processing.

[0022] In the optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials of the present invention, the electron beam of the scanning electron microscope is raster-scanned in the etching step before the ion beam etching is started and during the processing to perform focused ion beam etching. This can avoid the performance degradation caused by deformation of the material due to heat, while maintaining the reliability of the etching process. In addition, the optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials of the present invention uses a scanning electron microscope to monitor the focused ion beam processing process in real time, and can dynamically adjust the processing parameters based on the real-time observation results to adapt to the processing requirements of different samples, thus having strong flexibility. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0024] Figure 1 This is a flow chart of processing flexible materials in dual-beam synchronous working mode of the optimization method according to one embodiment of the present invention.

[0025] Figure 2 This is a scanning electron microscope image of the nanogrooves processed on polydimethylsiloxane in Example 1.

[0026] Figure 3 This is a scanning electron microscope image of the nanogrooves processed on polydimethylsiloxane in Comparative Example 1.

[0027] Figure 4 This is a scanning electron microscope image of the nano-grooves machined on silicon in Reference Example 1.

[0028] Figure 5 This is a scanning electron microscope image of the nano-grooves machined on silicon in Reference Example 2. DETAILED DESCRIPTION

[0029] In order to enable those skilled in the art to better understand the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of this application.

[0030] The disclosed optimization method for FIB-SEM dual-beam simultaneous controllable processing of flexible materials is targeted at materials with poor thermal conductivity. The thermal conductivity of such materials can be characterized by thermal conductivity. Materials with poor thermal conductivity are defined as those with a thermal conductivity of 0.2 W / mK or less.

[0031] The aforementioned material is a flexible material. Flexible materials have properties such as bendability, stretchability, lightness, and ease of integration into various complex shapes. They are used in various fields such as electronics, medical treatment, energy, and environmental protection, and are therefore preferred.

[0032] Examples of the material of the aforementioned material include polymers and stretchable electronic elements, and polymers are preferred.

[0033] Examples of the polymer include polyvinyl alcohol, polyester, polyimide, polyethylene naphthalate, polydimethylsiloxane, polyurethane, and poly(meth)acrylate. When the material is a polymer, polydimethylsiloxane or polymethyl methacrylate is preferably used in view of processing accuracy, processing efficiency, and maintenance of material properties during processing.

[0034] The molecular weight of the polymer may be, for example, in the range of 500 to 100,000.

[0035] The disclosed optimization method for FIB-SEM dual-beam simultaneous controllable processing of flexible materials is performed using a focused ion beam-scanning electron microscope system, such as the Helios 5CX DualBeam, Helios5UX DualBeam, Helios 5HX DualBeam, and TESCAN Amber systems.

[0036] The type of ions in the aforementioned focused ion beam may be, for example, gallium ions.

[0037] The optimization method of FIB-SEM dual beam synchronous controllable processing of flexible materials disclosed in this invention is shown in the process. Figure 1 , including surface cleaning step, scanning electron microscope imaging step, dual beam centering adjustment step, and etching step, etc. Each step is described below.

[0038] [Surface cleaning steps]

[0039] The step of cleaning the surface of a material by chemical or physical methods.

[0040] Examples of the chemical method include removal methods using solvents such as acetone, alcohol, and deionized water, and acid and alkali treatments.

[0041] Examples of the physical method include ultrasonic cleaning and mechanical cleaning.

[0042] [Scanning Electron Microscope Imaging Steps]

[0043] In the scanning electron microscope imaging step, the material to be processed is placed in the sample chamber of the FIB-SEM dual-beam microscope, the acceleration voltage and beam current of the scanning electron microscope are adjusted for surface imaging, and feature points / marks are selected and the electrical parameters of the objective lens are adjusted for surface imaging to obtain the initial surface morphology information of the material.

[0044] In the aforementioned scanning electron microscope imaging step, by selecting appropriate acceleration voltage and beam current, surface imaging is performed, feature points / markers are selected and placed in the center of the field of view, and the contrast, brightness, astigmatism, etc. of the formed image are adjusted by using the objective lens to perform high-resolution imaging of the sample, thereby obtaining a clear surface morphology image.

[0045] In the aforementioned scanning electron microscope imaging step, the aforementioned acceleration voltage may be adjusted to, for example, a range of 0.5 to 15 kV.

[0046] In the aforementioned scanning electron microscope imaging step, the aforementioned beam current is adjusted to, for example, a range of 30 pA to 10 nA.

[0047] For the aforementioned objective lens focusing parameters, the working distance can be set to, for example, 6 mm.

[0048] [Double beam alignment adjustment steps]

[0049] During the dual-beam centering adjustment step, the appropriate focused ion beam (FIB) acceleration voltage and beam current are first selected to image the aforementioned material. The selected feature point / marker is placed at the center of the FIB image's field of view. The condenser and objective lens focus parameters are adjusted, and the contrast, brightness, and astigmatism of the resulting image are adjusted. The effect of the focused ion beam on the material surface is observed to obtain a clear FIB image. Next, the imaging windows of the focused ion beam and the scanning electron microscope (SEM) are switched back and forth to ensure that the feature point / marker is located at the center of the field of view of the FIB image and the SEM image, respectively, at the same magnification. The junction of the focused ion beam, scanning electron microscope, and material is found to achieve dual-beam centering adjustment.

[0050] By adjusting the acceleration voltage, beam current, condenser parameters and objective lens focusing parameters of the focused ion beam, high-resolution imaging can be performed, thereby obtaining the effect of the focused ion beam on the material surface, providing a basis for the dual-beam alignment adjustment described later.

[0051] Then, by switching the imaging windows of the FIB and SEM back and forth, dual-beam alignment is performed. This "dual-beam alignment" involves selecting a characteristic point for ion beam system imaging, selecting an appropriate aperture, adjusting the condenser voltage, and adjusting the objective lens voltage for focusing. This adjusts the contrast, brightness, and astigmatism of the resulting image, ensuring a clear focused ion beam image.

[0052] During the aforementioned "dual-beam centering" process, it's necessary to carefully observe the images in both windows to locate the intersection of the FIB, SEM, and material, and ensure that the feature point / marker is centered in the field of view of both the FIB and SEM images at the same magnification. This dual-beam centering is crucial for ensuring accurate dual-beam simultaneous machining.

[0053] The acceleration voltage of the aforementioned focused ion beam can be adjusted to, for example, 30 kV.

[0054] The beam current of the aforementioned focused ion beam can be adjusted to a range of, for example, 10 pA to 100 pA by selecting a suitable aperture and adjusting the parameters of the condenser lens.

[0055] For the aforementioned objective lens focusing parameters, for example, the working distance can be set to 12 mm.

[0056] [Etching step]

[0057] During the etching step, the focused ion beam processing mode, dosage, processing time and scanning mode of the scanning electron microscope are adjusted according to the preset processing pattern. The processing area is imaged using the scanning electron microscope to observe the processing process and morphology changes in real time while the focused ion beam is used for etching.

[0058] During typical operation, after the aforementioned "dual-beam centering adjustment step" is completed, during the focused ion beam etching process, a scanning electron microscope typically uses a single scan to prevent the electron beam from adversely affecting the etching process. However, during their research, the inventors unexpectedly discovered that by operating ion beam processing and electron beam imaging simultaneously during the etching step, electron beam imaging is enabled after the processing pattern is preset and before the ion beam begins processing. Furthermore, during the etching step, electron beam imaging is quickly disabled after the ion beam processing is completed. This allows for real-time observation of the etching process using a scanning electron microscope, while also minimizing the local thermal effects of the electron beam compared to the ion beam. Enabling electron beam imaging after the processing pattern is preset and before the ion beam begins processing reduces initial stress accumulation within the sample. When the ion beam is subsequently enabled for processing, the real-time monitoring and feedback of the electron beam allows for more precise control of the processing process, reducing thermal deformation of the material due to excessive stress caused by improper processing, and improving the quality of the resulting pattern. Further research by the inventors found that this effect is particularly pronounced when the material to be processed has poor thermal conductivity. The inventors of the present application analyzed that the reason why the accuracy of the formed graphics can be improved is that the local thermal effect of the electron beam is smaller than that of the ion beam, which reduces the initial stress accumulation inside the sample; in addition, due to the real-time feedback and monitoring of the electron beam, the additional stress generated by improper processing, which causes the material to deform due to heat, is reduced, thereby improving the quality of the processed graphics.

[0059] After completing the aforementioned dual-beam alignment steps, the FIB processing mode, dose, and processing time, as well as the SEM scanning method, are adjusted according to the preset processing pattern. The goal is to optimize the dual-beam processing parameters based on the requirements and sample characteristics to ensure process controllability and processing quality. By adjusting these parameters, the FIB and SEM are synchronized, ensuring close coordination during the processing.

[0060] By operating ion beam processing and electron beam imaging simultaneously during the etching step, the electron beam imaging is turned on after the predetermined processing pattern is formed and before the ion beam begins processing. Furthermore, during the etching step, the electron beam imaging is quickly turned off after the ion beam processing is completed. This prevents material deformation due to heat, which can lead to performance degradation, while maintaining the reliability of the etching process.

[0061] The shape of the aforementioned processed pattern is not particularly limited, and may be, for example, a nanowire, a nanogroove, a nanohole, or the like.

[0062] In the aforementioned etching step, the operating voltage of the focused ion beam can be, for example, 0.5 kV to 30 kV, and the operating beam current of the focused ion beam can be controlled to be, for example, between 10 pA and 100 pA.

[0063] In addition, in the aforementioned etching step, the operating voltage of the electron beam may be, for example, 0.5 to 15 kV, and the operating beam current of the electron beam may be, for example, between 30 pA and 10 nA.

[0064] In some embodiments, the optimization method for FIB-SEM dual-beam simultaneous controllable processing of flexible materials further includes: prior to the scanning electron microscope imaging step, coating the surface of the material with a conductive material. The conductive material may be gold or carbon, preferably gold.

[0065] The conductive material plating step can be performed by methods such as ion sputtering or magnetron sputtering. The conductive material plating step can enhance the conductivity of the material. In particular, when the material itself has poor conductivity, the conductive material plating step is preferably performed.

[0066] The present disclosure is further described in detail below with reference to the embodiments. It is understood that the embodiments described are only a portion of the embodiments of the present disclosure, rather than all of the embodiments. Based on the embodiments of the present disclosure, all other embodiments obtained by persons of ordinary skill in the art without creative effort are within the scope of protection of the present disclosure.

[0067] Example

[0068] Example 1:

[0069] Material: Polydimethylsiloxane, brand Dow Corning, model 184; thermal conductivity 0.15W / mK.

[0070] Focused ion beam-scanning electron microscope dual beam system: TESCAN Amber, TESCAN

[0071] Ion beam parameters: accelerating voltage 30 kV, beam current 50 pA, raster scanning;

[0072] Electron beam parameters: accelerating voltage 10 kV, beam current 3 nA, raster scanning.

[0073] The above materials were ultrasonically cleaned with acetone, alcohol, and deionized water in sequence to ensure cleanliness. Then, a small ion sputtering instrument was used to gold-plate the surface of the polydimethylsiloxane film under the conditions of a plasma current of 10 mA and a working time of 50 s to improve the conductivity of the sample and reduce the local charge accumulation effect that may occur during FIB processing.

[0074] The material to be processed is fixed to the sample stage using conductive adhesive, and the sample stage is placed in the sample chamber of a focused ion beam-electron beam dual-beam microscope for scanning electron microscopy imaging. The electron beam acceleration voltage is selected to be 10kV, and the beam current is selected to be 3nA. Surface imaging is performed, and feature points / markers are selected and placed in the center of the field of view. The objective lens is used to focus and the contrast, brightness, and astigmatism of the formed image are adjusted to obtain high-resolution imaging of the sample, thereby obtaining a clear surface morphology image. In addition, the working distance is set to 6mm, and the objective lens is used to focus and the contrast, brightness, and astigmatism of the formed image are adjusted to ensure the clarity and resolution of the imaging.

[0075] During the dual-beam centering adjustment, first, switch to the ion beam imaging window, select the ion beam acceleration voltage as 30kV, select the appropriate aperture and adjust the condenser parameters so that the ion beam current is 50pA, place the selected feature points / markers at the center of the FIB image field of view, adjust the objective lens focus parameters to image the selected feature points / markers, and adjust the contrast, brightness, astigmatism, etc. of the formed image to make the focused ion beam image clear. Then, switch back and forth between the imaging windows of the focused ion beam and the scanning electron microscope, and perform dual-beam centering adjustment to find the junction of the focused ion beam, scanning electron microscope, and material. And make sure that the feature points / markers are located at the center of the field of view of the FIB image and the SEM image at the same magnification.

[0076] Switch to the ion beam window, and set the machining pattern to nanogrooves with a length of 10μm and a depth of 0.5μm. The ion beam machining method is raster scanning. The electron beam is turned on for imaging, and then the ion beam is turned on for etching. While etching with the focused ion beam, the scanning electron microscope is used to image the machining area to observe the machining process and morphological changes in real time.

[0077] Figure 2 The scanning electron microscope image of the nano-grooves obtained by processing on polydimethylsiloxane is shown in FIG. Figure 2 It can be seen that the etched pattern obtained by the etching process is consistent with the preset processing pattern, indicating that high-quality nano-grooves are formed on the material by the etching process.

[0078] Comparative Example 1:

[0079] Material: Polydimethylsiloxane, brand Dow Corning, model 184, thermal conductivity 0.15W / mK;

[0080] Ion beam parameters: accelerating voltage 30 kV, beam current 50 pA, raster scanning;

[0081] Electron beam parameters: accelerating voltage of 10 kV, beam current of 3 nA, raster scanning.

[0082] In Comparative Example 1, the same processing as in Example 1 was performed except that the above materials, ion beam parameters, and electron beam parameters were used. In addition, in the etching process step, the ion beam was turned on for etching, and then the electron beam was turned on for imaging.

[0083] Figure 3 The scanning electron microscope image of the nano-grooves obtained by the aforementioned etching process is shown. Figure 3 It can be seen that the nano-grooves formed by the etching process have obvious "cracks" and are formed into a "rugby ball" shape that is wide in the middle and thin at both ends.

[0084] Reference Example 1:

[0085] Material: Silicon, Zhongjing Scientific Instrument, model 100N silicon wafer single polishing, thermal conductivity 148W / mK.

[0086] Processed pattern: nanogrooves with a length of 10 μm and a depth of 0.5 μm.

[0087] Ion beam parameters: accelerating voltage 30 kV, beam current 50 pA, raster scanning;

[0088] Electron beam parameters: accelerating voltage 10 kV, beam current 3 nA, raster scanning.

[0089] The processing was performed in the same manner as in Example 1 except for the above-mentioned materials, ion beam parameters, and electron beam parameters.

[0090] Figure 4 This is a scanning electron microscope image of the nanogrooves obtained by the above processing.

[0091] Reference Example 2:

[0092] Material: Silicon, Zhongjing Scientific Instrument, model 100N silicon wafer single polishing, thermal conductivity 148W / mK.

[0093] Processed pattern: nanogrooves with a length of 10 μm and a depth of 0.5 μm.

[0094] Ion beam parameters: accelerating voltage 30 kV, beam current 50 pA, raster scanning;

[0095] Electron beam parameters: accelerating voltage 10 kV, beam current 3 nA, raster scanning.

[0096] The processing was performed in the same manner as in Comparative Example 1 except that the above-mentioned materials, ion beam parameters, and electron beam parameters were used.

[0097] Figure 5 This is a scanning electron microscope image of the nanogrooves obtained by the above processing.

[0098] from Figure 2 and Figure 3 From the comparison, it can be seen that when processing on materials with poor thermal conductivity, by adopting the method of the present application in which ion beam processing and electron beam imaging work simultaneously during etching processing, and electron beam imaging is turned on after the preset processing pattern and before the ion beam starts processing, and is quickly turned off after the processing is completed, the shape of the nano-groove obtained by processing is consistent with the preset shape, and the processing quality is high. However, for the method of Comparative Example 1 in which ion beam processing and electron beam imaging work simultaneously during etching processing, and electron beam imaging is turned on after the ion beam processing starts and is quickly turned off after the processing is completed, the shape of the nano-groove obtained by processing has obvious defects.

[0099] In addition, from Figure 4 and Figure 5 From the comparison, it can be seen that for silicon with good thermal conductivity, whether it is the reference example 1 of the method of the present application in which ion beam processing and electron beam imaging work simultaneously during etching processing, electron beam imaging is turned on after the preset processing pattern and before the ion beam starts processing, and is quickly turned off after the processing is completed, or the reference example 2 of the method in which ion beam processing and electron beam imaging work simultaneously during etching processing, electron beam imaging is turned on after the ion beam starts processing, and is quickly turned off after the processing is completed, the shapes of the processed nanogrooves are consistent with the preset shapes.

[0100] The present disclosure is not limited to the above-described embodiments. Persons skilled in the art may make improvements and modifications without departing from the principles of the present disclosure, and such improvements and modifications are considered to be within the scope of protection of the present disclosure. Any matters not described in detail in this specification are prior art known to those skilled in the art.

[0101] The foregoing description is merely a preferred embodiment of the present application and is not intended to limit the present application. Persons skilled in the art will readily appreciate that various modifications and variations are possible. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present application shall be included within the scope of protection of the present application.

Claims

1. An optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials, characterized in that: The thermal conductivity of the material is below 0.2 W / mK, The method comprises the following steps: Surface cleaning step: a step of cleaning the surface of the material by chemical or physical methods; Scanning electron microscope imaging step: placing the material in a sample chamber of a FIB-SEM dual-beam microscope, adjusting the acceleration voltage and beam current of the scanning electron microscope to perform surface imaging, selecting feature points / markers and adjusting the electrical parameters of the objective lens to achieve clear imaging at different magnifications, and obtaining initial surface morphology information of the material; Dual-beam centering adjustment step: on the basis of clear imaging of the material by scanning electron microscope, adjusting the acceleration voltage and beam current of the focused ion beam to perform ion beam imaging, finding characteristic points / marks and adjusting the electrical parameters of the electrostatic lens to achieve clear imaging at different magnifications, then repeatedly switching the imaging windows of the focused ion beam and the scanning electron microscope to ensure that the characteristic points / marks are located at the center of the field of view of the FIB image and the SEM image respectively at the same magnification, finding the junction point of the focused ion beam, the scanning electron microscope and the material, and achieving dual-beam centering adjustment; Etching step: Switch to the ion beam window to preset the processing pattern, adjust the focused ion beam scanning mode, dosage and processing time as well as the scanning mode of the scanning electron microscope, and use the scanning electron microscope to image the processing area to observe the processing process and morphology changes in real time while using the focused ion beam to perform etching; In the etching step, ion beam processing and electron beam imaging work simultaneously, and electron beam imaging is turned on after the preset processing pattern and before the ion beam processing begins. In the etching step, the electron beam imaging is quickly turned off after the ion beam processing is completed.

2. The optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials according to claim 1, wherein: In the etching step, the operating voltage of the focused ion beam is 0.5 kV to 30 kV, and the operating beam current of the focused ion beam is controlled between 10 pA and 100 pA.

3. The optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials according to claim 1, wherein: In the etching step, the working voltage of the electron beam is 0.5 kV to 15 kV, and the working beam current of the electron beam is 30 pA to 10 nA.

4. The optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials according to claim 1, wherein: The type of the focused ion beam is gallium ions.

5. The optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials according to claim 1, further comprising: The step of plating the surface of the material with gold is performed before the scanning electron microscope imaging step.

6. The optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials according to claim 1, wherein: The material is a polymer.

7. The optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials according to claim 6, wherein: The polymer is polydimethylsiloxane or polymethyl methacrylate.

8. Use of the optimization method for FIB-SEM dual-beam synchronous controllable processing of flexible materials according to any one of claims 1 to 7 in material processing.

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