Ion implantation apparatus and semiconductor device manufacturing method using same

Abstract

An ion implantation apparatus includes: a process chamber into which a substrate is loaded; an ion generation chamber adjacent to the process chamber in the first direction, in which the ion generation chamber is configured to generate ions and supply the ions to the process chamber in the first direction; a submerged plasma gun (PFG) adjacent to the process chamber in a second direction, where the PFG is configured to generate electrons and supply the electrons to the process chamber in the second direction; a PFG cage between the PFG and the process chamber, and through which electrons migrate to the process chamber; and a liner film covering at least a portion of an inner sidewall of the process chamber, in which the liner film includes a conductive material, and in which the first direction and the second direction are perpendicular to each other.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application is based on and claims the benefit of priority of Korean Patent Application No. 10-2023-0181374 filed on December 14, 2023, in the Korean Intellectual Property Office, and Korean Patent Application No. 10-2023-0122486 filed on September 14, 2023, in the Korean Intellectual Property Office, the disclosures of which are incorporated herein by reference in their entirety. Technical Field

[0003] The present disclosure relates to an ion implantation apparatus and a method for manufacturing a semiconductor device using the ion implantation apparatus. Background Art

[0004] In addition to thermal diffusion technology, ion implantation technology is also one of the process technologies used to introduce impurities into a wafer to manufacture semiconductor devices. A plasma flooding gun (PFG) is provided in an ion implantation device. The PFG generates a large amount of electrons inside the device, and then emits electrons into a positively charged ion beam. The PFG can reduce or prevent arcs that may occur on the wafer and are caused by a positively charged ion beam, and the PFG can compensate for the space charge of the ion beam. Summary of the invention

[0005] An ion implantation apparatus having improved reliability is provided. In addition, a semiconductor device manufacturing method having improved reliability is provided.

[0006] Aspects according to the present disclosure are not limited to the above-mentioned purposes. Other aspects and advantages not mentioned according to the present disclosure can be understood based on the following description, and can be more clearly understood based on the embodiments according to the present disclosure. In addition, it will be easily understood that the purposes and advantages according to the present disclosure can be achieved using the means shown in the claims or their combinations.

[0007] According to one aspect of the present disclosure, an ion implantation apparatus includes: a process chamber into which a substrate is loaded and in which an ion implantation process is performed on the substrate; an ion generation chamber adjacent to the process chamber in a first direction, wherein the ion generation chamber is configured to generate ions and supply the ions to the process chamber along the first direction; a flooded plasma gun PFG adjacent to the process chamber in a second direction, wherein the PFG is configured to generate electrons and supply the electrons to the process chamber along the second direction; a PFG cage between the PFG and the process chamber, and through which electrons migrate to the process chamber; and a liner film covering at least a portion of an inner side wall of the process chamber, wherein the liner film includes a conductive material, and wherein the first direction and the second direction are perpendicular to each other.

[0008] According to one aspect of the present disclosure, an ion implantation apparatus includes: a process chamber, a substrate is loaded into the process chamber, wherein an ion implantation process of irradiating ions toward an upper surface of the substrate along a first direction is performed in the process chamber, wherein the process chamber includes: a first inner side wall extending in a first direction and a second direction; a second inner side wall extending in the first direction and the second direction and facing the first inner side wall; a third inner side wall extending in the first direction and a third direction; a fourth inner side wall extending in the first direction and the third direction and facing the third inner side wall; an ion generation chamber adjacent to the process chamber in the first direction and configured to generate ions and supply the ions along the first direction to the process chamber; a flood plasma gun (PFG) spaced apart from the third inner sidewall of the process chamber in the second direction and configured to generate electrons and supply the electrons to the process chamber along the second direction; a PFG cage between the third inner sidewall of the process chamber and the PFG, and through which the electrons migrate to the process chamber; and a pair of liner films covering at least a portion of at least one of the first inner sidewall, the second inner sidewall, and the third inner sidewall of the process chamber, wherein the pair of liner films are spaced apart from each other in the third direction and face each other in the third direction, and wherein surfaces of the pair of liner films have at least one of a hatching pattern, a checkered pattern, and a dot pattern.

[0009] According to one aspect of the present disclosure, a method for manufacturing a semiconductor device includes: loading a substrate into an ion implantation apparatus; and performing an ion implantation process on the substrate, wherein the ion implantation apparatus includes: a process chamber, into which the substrate is loaded, and in which the ion implantation process is performed on the substrate; an ion generation chamber, adjacent to the process chamber in a first direction, wherein the ion generation chamber is configured to generate ions and supply the ions to the process chamber along the first direction; a plasma flood gun (PFG), adjacent to the process chamber in a second direction, wherein the PFG is configured to generate electrons and supply the electrons to the process chamber along the second direction; a PFG cage, between the PFG and the process chamber, and through which electrons migrate to the process chamber; and a liner film, covering at least a portion of an inner sidewall of the process chamber, wherein the liner film includes a conductive material, wherein the first direction and the second direction are perpendicular to each other.

[0010] Specific details of other embodiments are included in the detailed description and accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] The above and other aspects and features of the present disclosure will become more apparent by describing in detail some embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0012] Figure 1 and Figure 2 is an exemplary cross-sectional view for illustrating an ion implantation apparatus according to some embodiments;

[0013] Figure 3 yes Figure 1 A magnified view of the P region in FIG.

[0014] Figure 4 yes Figure 2 A magnified view of the Q region in ;

[0015] Figure 5 It is used to show Figure 1 and Figure 2 A perspective view of a liner membrane in FIG.

[0016] Figure 6 It is used to show Figure 1 An example diagram of a plasma flood gun (PFG) in FIG.

[0017] Figures 7 to 11 It is used to show Figure 1 and Figure 2 A plan view of the cushion membrane;

[0018] Figures 12 to 18 shows an ion implantation apparatus according to some other embodiments of the present disclosure; and

[0019] Fig.19 A method for manufacturing a semiconductor device according to some embodiments of the present disclosure is shown. DETAILED DESCRIPTION

[0020] Although the terms "first", "second", etc. may be used herein to describe various elements or components, these elements or components should not necessarily be limited by these terms. These terms are used to distinguish one element or component from another element or component. Therefore, without departing from the teachings of the present disclosure, the first element or component discussed below may also be referred to as the second element or component.

[0021] This description merely illustrates the principles of the present disclosure. Those skilled in the art will be able to design one or more arrangements that embody the principles of the present disclosure, although not explicitly described herein. In addition, all examples recorded herein are primarily intended to be explicitly used only for illustrative purposes to help readers understand the principles of the present disclosure and the concepts contributed by the inventors to improve the prior art, and should be interpreted as not being limited to these specifically recorded examples and conditions. In addition, all statements cited herein for the principles, aspects, embodiments, and specific examples thereof of the present disclosure are intended to include equivalents of the present disclosure.

[0022] The terms used in this disclosure are only used to describe specific embodiments, and may not be intended to limit the scope of another embodiment. Unless clearly indicated differently in the context, singular expressions may include plural expressions. The terms used herein (including technical or scientific terms) may have the same meanings as those generally understood by those of ordinary skill in the technical field described in the disclosure. The terms defined in the general dictionary in the terms used in this disclosure may be interpreted as meanings identical or similar to the contextual meanings of the relevant technology, and unless clearly defined in this disclosure, will not be interpreted in an ideal or excessive form of meaning. In some cases, even the terms defined in this disclosure may not be interpreted as excluding embodiments of the disclosure.

[0023] In one or more embodiments of the present disclosure described below, a hardware method is described as an example. However, since one or more embodiments of the present disclosure include techniques using both hardware and software, various embodiments of the present disclosure do not exclude software-based methods.

[0024] In addition, in the present disclosure, in order to determine whether a specific condition is satisfied or achieved, the expression of greater than or less than may be used, but this is only a description for expressing an example, and does not exclude the description of greater than or equal to, or less than or equal to. The condition described as "greater than or equal to" may be replaced with "greater than", the condition described as "less than or equal to" may be replaced with "less than", and the condition described as "greater than or equal to and less than" may be replaced with "greater than and less than or equal to". In addition, hereinafter, "A" to "B" means at least one of the elements from A (including A) to B (including B).

[0025] Before proceeding to the detailed description below, it may be advantageous to set forth the definitions of specific words and phrases used throughout this disclosure. The term "coupled" and its derivatives refer to any direct or indirect communication between two or more elements, regardless of whether these elements are in physical contact with each other. The terms "include" and "comprise" and their derivatives refer to including but not limited to. The term "or" is an inclusive term, meaning "and / or". The phrase "associated with..." and its derivatives refer to including, being included, interconnected with..., containing, being contained within, being connected to or connected with..., being coupled to or coupled with..., being communicable with..., collaborating with..., interweaving, juxtaposing, approaching..., being bound to... or bound with..., having, having the property of..., having a relationship to... or a relationship with..., etc. The phrase "at least one of..." when used with a list of items means that different combinations of one or more items in the listed items may be used, and only one item in the list may be required. For example, "at least one of A, B, and C" includes any combination of A, B, C, A and B, A and C, B and C, and A and B and C, and any variations thereof. The expression "at least one of a, b, or c" may mean only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof. Similarly, the term "set" means one or more. Thus, a set of items may be a single item or a set of two or more items.

[0026] First, refer to Figures 1 to 6 , an ion implantation apparatus according to some embodiments of the present disclosure will be described.

[0027] Figure 1 and Figure 2 is an exemplary cross-sectional view for illustrating an ion implantation apparatus according to some embodiments. Figure 3 yes Figure 1 Magnified view of the P region in . Figure 4 yes Figure 2 Magnified view of the Q region in . Figure 5 It is used to show Figure 1 and Figure 2 Perspective view of the liner membrane in FIG. Figure 6 It is used to show Figure 1 An example diagram of a plasma flood gun (PFG) in .

[0028] First, refer to Figure 1 and Figure 2 , an ion implantation apparatus according to some embodiments may include a process chamber 100 , an ion generation chamber 200 , a PFG 400 , a PFG cage 300 , and a liner film 150 .

[0029] In the process chamber 100, an ion implantation process is performed on the substrate 120. The ion generation chamber 200 may generate ions and supply an ion beam to the process chamber 100.

[0030] A gas may be supplied into the ion generation chamber 200. For example, the gas may be a xenon (Xe) gas. In addition, a high-frequency wave may be supplied into the ion generation chamber 200. Plasma may be generated by ionizing the xenon gas under high-frequency discharge.

[0031] The ion generation chamber 200 may be disposed at one side of the process chamber 100. For example, the ion generation chamber 200 may be disposed adjacent to the process chamber 100 in the first direction D1. That is, the ion generation chamber 200 may supply ions generated in the ion generation chamber 200 to the process chamber 100 along the first direction D1 (see Figure 1 250 in the figure).

[0032] As used herein and as Figure 1 As shown, the first direction D1, the second direction D2, and the third direction D3 may intersect each other. The first direction D1, the second direction D2, and the third direction D3 may be substantially perpendicular to each other. Specifically, the first direction D1 may be perpendicular to the upper surface of the substrate 120. The second direction D2 and the third direction D3 may be parallel to the upper surface of the substrate 120.

[0033] In some embodiments, the substrate support unit 110 may be disposed inside the process chamber 100. The substrate support unit 110 may be installed on a portion of the inner sidewall of the process chamber 100 extending in the third direction D3 and the second direction D2. The substrate support unit 110 may be spaced apart from the ion generation chamber 200. That is, the portion of the inner sidewall of the process chamber 100 (on which the substrate support unit 110 is installed) may face the ion generation chamber 200, as shown in FIG. Figure 1 shown.

[0034] The substrate supporting unit 110 may support the substrate 120, such as Figure 1As shown. The substrate support unit 110 may include an electrostatic chuck and a chuck support, the electrostatic chuck being configured to support the substrate 120 using an electrostatic force, and the chuck support supporting the electrostatic chuck. The electrostatic chuck may receive an electrode for holding the substrate 120 on the substrate support unit 110 or detaching the substrate 120 from the substrate support unit 110. The chuck support supports the electrostatic chuck disposed on the top of the substrate support unit 110, and may be made of a metal (e.g., aluminum) or a ceramic insulator (e.g., alumina). A heating member (e.g., a heater) may be disposed inside the chuck support, and heat from the heater may be transferred to the electrostatic chuck or the substrate 120. In addition, in an embodiment, a power supply application line connected to an electrode of the electrostatic chuck may be disposed in the chuck support. The configuration of the substrate support unit 110 is not limited thereto. In some embodiments, the substrate support unit 110 may include a vacuum chuck configured to support the substrate 120 using a vacuum, or the substrate support unit 110 may be configured to mechanically support the substrate 120.

[0035] In an embodiment, the substrate support unit 110 may include lift pins. The lift pins may be configured to lift the substrate 120 from a surface of the substrate support unit 110 on which the substrate 120 is located. Each lift pin may be received in a hole provided in the substrate support unit 110. The lift pins may be installed to be movable in a direction perpendicular to the substrate support unit 110. That is, the lift pins may be installed to be movable in the first direction D1.

[0036] In an embodiment, the lift pins may move in the first direction D1 to raise or lower the substrate 120. The substrate supporting unit 110 may include a sufficient number of lift pins to support the substrate 120. For example, the substrate supporting unit 110 may include three or more lift pins that are evenly spaced apart from each other and arranged along the circumferential direction of the substrate supporting unit 110. However, embodiments of the present disclosure are not limited thereto.

[0037] When a substrate 120 to be processed is brought into the process chamber 100 or taken out of the process chamber 100, the lift pins may be in a pin-up state, in which the lift pins protrude from the substrate support unit 110 in the first direction D1, so that the substrate 120 may be supported on the lift pins. In addition, when the substrate 120 is being processed in the process chamber 100, the lift pins may be in a pin-down state, in which the lift pins are located at a vertical height lower than the vertical height of the upper surface of the substrate support unit 110 in the first direction D1, so that the substrate 120 may be placed on the substrate support unit 110.

[0038] The PFG cage 300 may be disposed at one side of the process chamber 100. Specifically, the PFG cage 300 may be adjacent to the process chamber 100 in the second direction D2. The PFG cage 300 may be interposed between the PFG 400 and the process chamber 100. The PFG cage 300 may have a cylindrical shape in which a blank area is defined. The blank area of ​​the PFG cage 300 may be used as a passage, so that electrons generated from the PFG 400 (which will be described later) may migrate to the process chamber 100 through the blank area of ​​the PFG cage 300. The electrons generated from the PFG 400 may be supplied to the process chamber 100 along the second direction D2 (see Figure 1 500 in the figure).

[0039] In some embodiments, the process chamber 100 may include inner and outer sidewalls 100ISW. The inner sidewalls may include a first inner sidewall 100ISW1, a second inner sidewall 100ISW2, a third inner sidewall 100ISW3, and a fourth inner sidewall 100ISW4.

[0040] exist Figure 1 In the embodiment, the first inner sidewall 100ISW1 and the second inner sidewall 100ISW2 may face each other. The first inner sidewall 100ISW1 and the second inner sidewall 100ISW2 may be spaced apart from each other in the third direction D3. Each of the first inner sidewall 100ISW1 and the second inner sidewall 100ISW2 may be disposed on a plane extending in the first direction D1 and the second direction D2.

[0041] exist Figure 2 In the embodiment, the third inner sidewall 100ISW3 and the fourth inner sidewall 100ISW4 may face each other. The third inner sidewall 100ISW3 and the fourth inner sidewall 100ISW4 may be spaced apart from each other in the second direction D2. Each of the third inner sidewall 100ISW3 and the fourth inner sidewall 100ISW4 may be disposed on a plane extending along the first direction D1 and the third direction D3.

[0042] Each of the first inner sidewall 100ISW1 and the second inner sidewall 100ISW2 may be perpendicular to the third inner sidewall 100ISW3. Each of the first inner sidewall 100ISW1 and the second inner sidewall 100ISW2 may be perpendicular to the fourth inner sidewall 100ISW4. Conversely, each of the third inner sidewall 100ISW3 and the fourth inner sidewall 100ISW4 may be perpendicular to the first inner sidewall 100ISW1. Each of the third inner sidewall 100ISW3 and the fourth inner sidewall 100ISW4 may be perpendicular to the second inner sidewall 100ISW2.

[0043] In some embodiments, a portion of the third inner sidewall 100ISW3 may be open. That is, a portion of the process chamber 100 may be open. Electrons generated from the PFG 400 may migrate into the process chamber 100 through the open area. The PFG cage 300 may be installed in the open portion of the third inner sidewall 100ISW3. However, embodiments of the present disclosure are not limited thereto.

[0044] In some embodiments, a portion of the first inner sidewall 100ISW1 and a portion of the second inner sidewall 100ISW2 may be open to receive the PFG cage 300 in the portion of the first inner sidewall 100ISW1 and the portion of the second inner sidewall 100ISW2. That is, the width of the PFG cage 300 in the third direction D3 may be greater than the distance between the first inner sidewall 100ISW1 and the second inner sidewall 100ISW2 in the third direction D3. However, embodiments of the present disclosure are not limited thereto.

[0045] exist Figure 3 and Figure 4 In the embodiment of the present invention, the liner film 150 may be configured to cover at least a portion of the inner sidewall of the process chamber 100. At least a portion of the liner film 150 may be disposed in the PFG cage 300, and the other portion of the liner film 150 may cover a portion of the inner sidewall of the process chamber 100. The liner film 150 may be provided as a pair of liner films. For example, one of the pair of liner films 150 may cover at least a portion of each (or at least one) of the first inner sidewall 100ISW1 and the third inner sidewall 100ISW3 of the process chamber 100. The other of the pair of liner films 150 may cover a portion of the second inner sidewall 100ISW2 of the process chamber 100. However, the embodiments of the present disclosure are not limited thereto.

[0046] In some embodiments, the liner film 150 may include a first portion 151 and a second portion 152. The first portion 151 may extend in the first direction D1 and the third direction D3. The second portion 152 may be connected to the first portion 151. The second portion 152 may protrude in the second direction D2. The first portion 151 may cover at least a portion of the inner sidewall of the process chamber 100. That is, one of the pair of first portions 151 may cover at least a portion of each (or at least one) of the first inner sidewall 100ISW1 and the third inner sidewall 100ISW3 of the process chamber 100. The other of the pair of first portions 151 may cover at least a portion of the second inner sidewall 100ISW2 of the process chamber 100.

[0047] The first portion of the liner film 150 covering a portion of each of the first inner sidewall 100ISW1 and the third inner sidewall 100ISW3 and the second portion of the liner film 150 covering a portion of the second inner sidewall 100ISW2 may be substantially identical to each other. Hereinafter, the first portion of the liner film 150 covering a portion of each of the first inner sidewall 100ISW1 and the third inner sidewall 100ISW3 will be described.

[0048] In some embodiments, at least a portion of the liner film 150 may be disposed within the PFG cage 300. For example, Figure 3 As shown, the second portion 152 of the liner film 150 may be disposed in the PFG cage 300. That is, the process chamber 100 and the second portion of the liner film 150 may be in direct contact with each other, and the PFG cage 300 and the second portion of the liner film 150 may be in direct contact with each other. In addition, at least a portion of the PFG cage 300 may be in direct contact with the process chamber 100.

[0049] In some embodiments, the liner film 150 may include a first surface 150 a , a second surface 150 b , a third surface 150 c , a fourth surface 150 d , a fifth surface 150 e , a sixth surface 150 f , a seventh surface 150 g , and an eighth surface 150 h . Figure 3 An example of a first surface 150a, a second surface 150b, a third surface 150c, and a sixth surface 150f is shown, and Figure 4 Examples of the second surface 150b, the third surface 150c, the fourth surface 150d, the fifth surface 150e, the seventh surface 150g, and the eighth surface 150h are shown. Figure 5 Examples of a first surface 150 a , a second surface 150 b , a third surface 150 c , a sixth surface 150 f , a seventh surface 150 g , and an eighth surface 150 h are shown.

[0050] The first surface 150a may extend in the first direction D1 and the second direction D2. The first surface 150a may be a lower surface of the first portion 151 and the second portion 152. The first surface 150a may be exposed to ions supplied to the process chamber 100. The first surface 150a may be flat. However, embodiments of the present disclosure are not limited thereto. The first surface 150a may not protrude from the lower surface of the PFG cage 300. The lower surface of the PFG cage 300 may protrude from the first surface 150a. That is, the first surface 150a and the lower surface of the PFG cage 300 may not be coplanar with each other.

[0051] The second surface 150b may extend in the second direction D2 and the third direction D3. The second surface 150b may be a side surface of the second portion 152. The second surface 150b may be disposed in the PFG cage 300. The second surface 150b may be in direct contact with the PFG cage 300.

[0052] The third surface 150c may extend in the second direction D2 and the third direction D3. The third surface 150c may be a side surface of the first portion 151. The third surface 150c may be opposite to the second surface 150b. The third surface 150c may not protrude from one side wall 100a of the process chamber 100. One side wall 100a of the process chamber 100 may be a surface on which the process chamber 100 and the ion generation chamber 200 are in direct contact with each other. The third surface 150c may be coplanar with one side wall 100a of the process chamber 100. That is, the third surface 150c and one side wall 100a of the process chamber 100 may constitute the same plane as the plane extending in the second direction D2 and the third direction D3.

[0053] The fourth surface 150d may extend in the third direction D3 and the first direction D1. The fourth surface 150d may be an upper surface of the second portion 152. The fourth surface 150d may be opposite to the eighth surface 150h. The fourth surface 150d may contact (at least a portion of) the PFG cage 300. The fourth surface 150d may not protrude from the outer sidewall 100OSW of the process chamber 100. That is, the second portion 152 may not protrude from the outer sidewall 100OSW of the process chamber 100. At least a portion of the second portion 152 may not overlap with the process chamber 100 in the first direction D1. The distance from the third inner sidewall 100ISW3 of the process chamber 100 to the fourth surface 150d may be less than the distance from the third inner sidewall 100ISW3 of the process chamber 100 to the outer sidewall 100OSW of the process chamber 100.

[0054] The fifth surface 150e may extend in the second direction D2 and the third direction D3. The fifth surface 150e may be a side surface of the second portion 152. The fifth surface 150e may be opposite to the second surface 150b. The fifth surface 150e may be in direct contact with the process chamber 100.

[0055] The sixth surface 150f may extend in the first direction D1 and the second direction D2. The sixth surface 150f may be an upper surface of the first portion 151. The sixth surface 150f may be opposite to the first surface 150a. The sixth surface 150f may directly contact the first inner sidewall 100ISW1 of the process chamber 100.

[0056] The seventh surface 150g may extend in the first direction D1 and the third direction D3. The seventh surface 150g may be a side surface of the first portion 151. The seventh surface 150g may directly contact the third inner sidewall 100ISW3 of the process chamber 100.

[0057] The eighth surface 150h may extend in the first direction D1 and the third direction D3. The eighth surface 150h may be a side surface of the first portion 151. The eighth surface 150h may be exposed to ions supplied to the process chamber 100. The eighth surface 150h may be flat. However, embodiments of the present disclosure are not limited thereto.

[0058] In some embodiments, the liner film 150 may include a conductive material. For example, the liner film 150 may include a graphite material. Since the liner film 150 includes a conductive material, the process chamber 100 may be maintained in a ground state. In some embodiments, the resistivity of the liner film 150 may be substantially the same as the resistivity of carbon (C). In another example, the resistivity of the liner film 150 may be lower than the resistivity of carbon (C). For example, the resistivity of the liner film 150 may be 3.5*10 -5 Ω·m, but not limited thereto.

[0059] According to some embodiments, the ion implantation apparatus may further include a fastener 350 that may couple the PFG cage 300 with the process chamber 100. For example, the fastener 350 may pass through the PFG cage 300 and be coupled to the process chamber 100.

[0060] refer to Figure 6 , the PFG 400 may include a support plate 410 , an upper body 420 , a connection pin 430 , a filament fixing member 440 , a filament 450 , and a housing 460 .

[0061] The support plate 410, the upper body 420, the connection pin 430, the filament fixing member 440, and the filament 450 may be accommodated in the housing 460. A portion of the housing 460 may be coupled to the PFG cage 300. However, embodiments of the present disclosure are not limited thereto.

[0062] The filament 450 may emit electrons. The filament 450 may emit electrons and supply the electrons to the process chamber 100 (see reference numeral 500). The electrons may be supplied along the second direction D2. The filament 450 may be inserted into the connecting pin 430. The connecting pin 430 may have a groove (defined in the connecting pin 430), and the end of the filament 450 may be inserted into the groove.

[0063] The support plate 410 may be disposed at a lower position in the housing 460. The support plate 410 may support the upper body 420 and the filament fixing member 440. In an embodiment, the support plate 410 may be coupled to and fixed to the housing 460. The support plate 410 may be coupled to the housing 460 and may be securely fixed to the housing 460. The upper body 420 may be disposed on an upper surface of the support plate 410. The filament fixing member 440 may be disposed on a lower surface of the support plate 410. That is, the upper body 420 and the filament fixing member 440 may be opposite to each other, and the support plate 410 is disposed between the upper body 420 and the filament fixing member 440.

[0064] The upper body 420 may be disposed on the support plate 410. The connection pin 430 may be disposed on the upper body 420. In an embodiment, the connection pin 430 may be a pin for fixing the filament 450. The upper body 420 and the support plate 410 may be referred to as an insulator of the PFG. However, embodiments of the present disclosure are not limited thereto.

[0065] In some embodiments, there may be two upper bodies 420. The two upper bodies 420 may be spaced apart from each other. In another embodiment, the side walls of the two upper bodies 420 facing each other may be closely spaced apart from each other. In this regard, the side walls of the upper bodies 420 facing each other may contact each other. When the two upper bodies 420 contact each other, the position of the PFG 400 may be fixed more accurately.

[0066] The filament fixing member 440 may be disposed on the lower surface of the support plate 410. The filament 450 may be fixed using the filament fixing member 440. For example, the filament 450 may be fixed to the connection pin 430 and the upper body 420 by rotating the filament fixing member 440.

[0067] When the ion implantation apparatus is operating, the PFG 400 may emit a large amount of electrons. The emitted large amount of electrons may be referred to as an emission current. According to some embodiments, the ion implantation apparatus further includes a liner film 150. Since the liner film 150 covers a portion of the inner side wall of the process chamber 100, the magnitude of the emission current of the PFG 400 may not be reduced. Therefore, an ion implantation apparatus with improved reliability may be provided.

[0068] In the following, reference will be made to Figures 6 to 15 Ion implantation apparatuses according to some other embodiments of the present disclosure are described.

[0069] First, refer to Figures 7 to 18 , a liner film according to some other embodiments of the present disclosure is described. Figures 7 to 11 It is used to show Figure 1 and Figure 2 A plan view of the cushion membrane.

[0070] First, refer to Figure 7 , the liner film 150 may include a protrusion 155. The protrusion 155 may be disposed on the first surface 150a. The protrusion 155 may protrude from the first surface 150a toward the second inner sidewall 100ISW2 in the third direction D3. Since the protrusion 155 is included in the liner film, the surface area size of the liner film 150 exposed to ions may be increased. Therefore, an ion implantation apparatus with improved reliability may be provided.

[0071] The protrusion 155 (of the cushion film 150) may extend in an elongated manner in the second direction D2. The protrusion 155 may include at least one protrusion. The protrusions 155 may be spaced apart from each other in the first direction D1. That is, the first surface 150a of the cushion film 150 may have a stripe pattern.

[0072] refer to Figure 8 , the liner film 150 may include a protrusion 155. The protrusion 155 may be disposed on the first surface 150a. The protrusion 155 may protrude from the first surface 150a toward the second inner sidewall 100ISW2 in the third direction D3.

[0073] The protrusion 155 may extend in the first direction D1. The protrusion 155 may include at least two protrusion portions. In an embodiment, the at least two protrusion portions of the protrusion 155 may be spaced apart from each other in the second direction D2. That is, the first surface 150a of the liner film 150 may have a stripe pattern.

[0074] refer to Fig. 9 , the liner film 150 may include a protrusion 155. The protrusion 155 may be disposed on the first surface 150a. The protrusion 155 may protrude from the first surface 150a toward the second inner sidewall 100ISW2 in the third direction D3.

[0075] The protrusion 155 may extend in the fourth direction D4 (eg, Fig. 9 ). The fourth direction D4 may be any direction intersecting the first direction D1 and the second direction D2 in a plane defined by the first direction D1 and the second direction D2. That is, the protrusion 155 may extend in a diagonal direction. In an embodiment, the protrusion 155 may include at least one protrusion. That is, the first surface 150a of the liner film 150 may have a shadow pattern.

[0076] refer to Fig.10 , the liner film 150 may include a protrusion 155. The protrusion 155 may be disposed on the first surface 150a. The protrusion 155 may protrude from the first surface 150a toward the second inner sidewall 100ISW2 in the third direction D3.

[0077] The protrusions 155 may have a grid shape extending in the first direction D1 and the second direction D2. That is, the first surface 150a of the cushion film 150 may have a checkered pattern.

[0078] refer to Fig.11 , the liner film 150 may include a protrusion 155. The protrusion 155 may be disposed on the first surface 150a. The protrusion 155 may protrude from the first surface 150a toward the second inner sidewall 100ISW2 in the third direction D3.

[0079] The protrusion 155 may have a circular shape in a plan view. That is, the first surface 150a of the liner film 150 may have a dot pattern.

[0080] In the following, reference Figures 12 to 18 , the ion implantation apparatus according to some other embodiments of the present disclosure will be described. Figures 1 to 6 Duplicate contents will not be described again. Figures 12 to 18 Ion implantation apparatuses according to some other embodiments of the present disclosure are shown.

[0081] First, refer to Fig.12 , the liner film 150 may further include a protrusion 155. The protrusion 155 may be disposed on the first surface 150a. The protrusion 155 may protrude in the third direction D3. As described above, since the liner film 150 includes the protrusion 155, the area size of the first surface 150a exposed to ions may become larger.

[0082] refer to Fig.13 and Fig.14 , the PFG cage 300 may not protrude from the second portion 152 of the gasket film 150 . The lower surface of the PFG cage 300 may be coplanar with the lower surface or side surface of the second portion 152 of the gasket film 150 .

[0083] refer to Fig.15 and Fig.16 , the second portion 152 of the liner film 150 may not be disposed in the PFG cage 300. Instead, the second portion 152 of the liner film 150 may be interposed between the PFG cage 300 and the process chamber 100. One sidewall of the second portion 152 of the liner film 150 may be in direct contact with the PFG cage 300. Another sidewall of the second portion 152 of the liner film 150 may be in direct contact with the process chamber 100. The PFG cage 300 and the process chamber 100 may not be in direct contact with each other.

[0084] refer to Fig.17, the fourth surface 150d of the liner film 150 may be coplanar with the outer sidewall 100OSW of the process chamber 100. In this regard, the second portion 152 of the liner film 150 does not protrude from the outer sidewall 100OSW of the process chamber 100. That is, the height of the fourth surface 150d based on the third inner sidewall 100ISW3 of the process chamber 100 may be the same or substantially the same as the height of the outer sidewall 100OSW of the process chamber 100 based on the third inner sidewall 100ISW3 of the process chamber 100. In addition, the second portion 152 of the liner film 150 may completely (or substantially) overlap with the process chamber 100 in the first direction D1.

[0085] refer to Fig.18 , the fourth surface 150d of the liner film 150 may protrude from the outer sidewall 100OSW of the process chamber 100 in the second direction D2. At least the second portion 152 of the liner film 150 may protrude from the outer sidewall 100OSW of the process chamber 100 in the second direction D2. That is, at least a portion of the second portion 152 of the liner film 150 may not overlap with the process chamber 100 in the first direction D1. In addition, a height of the fourth surface 150d based on the third inner sidewall 100ISW3 of the process chamber 100 may be greater than a height of the outer sidewall 100OSW of the process chamber 100 based on the third inner sidewall 100ISW3 of the process chamber 100.

[0086] Hereinafter, a semiconductor device manufacturing method according to some embodiments of the present disclosure is described. Fig.19 is a flowchart for illustrating a method for manufacturing a semiconductor device according to some embodiments of the present disclosure.

[0087] refer to Fig.19 , the method for manufacturing a semiconductor device according to some embodiments may include operations of loading a substrate into a process chamber in S100 and performing an ion implantation process on the substrate in S200 .

[0088] Specifically, refer to Figure 1 and Fig.19 , a substrate 120 may be loaded into the process chamber 100 in S100. The substrate 120 may be loaded on the substrate supporting unit 110. Subsequently, an ion implantation process may be performed on the substrate 120. First, ions may be generated in the ion generating chamber 200. The ions may be supplied to the process chamber 100 along a first direction D1 (see reference numeral 250).

[0089] For example, when ions are supplied to the process chamber 100 along the first direction D1, the PFG 400 may generate electrons and supply the electrons to the process chamber 100. Electrons may be supplied along the second direction D2 (see reference numeral 500). When ions are supplied to the process chamber 100, the inner sidewall of the process chamber may be contaminated by the ions. However, according to some embodiments of the present disclosure, the ion implantation apparatus of the present disclosure includes a liner film 150, thereby preventing contamination of the inner sidewall of the process chamber. Therefore, the process chamber 100 may be maintained in a ground state. In addition, the emission current may not be reduced. Therefore, an ion implantation apparatus with improved reliability may be provided.

[0090] Although the embodiments of the present disclosure have been described with reference to the accompanying drawings, the present disclosure is not limited to the above-described embodiments, but can be implemented in various different forms. It will be appreciated by those skilled in the art that the present disclosure can be implemented in other specific forms without changing the technical spirit or essential features of the present disclosure. Therefore, it should be understood that the embodiments described above are not restrictive but illustrative in all aspects.

Claims

1. An ion implantation device, comprising: a process chamber into which a substrate is loaded and in which an ion implantation process is performed on the substrate; an ion generation chamber adjacent to the process chamber in a first direction, wherein the ion generation chamber is configured to generate ions and supply the ions to the process chamber along the first direction; a flooded plasma gun PFG adjacent to the process chamber in a second direction, wherein the PFG is configured to generate electrons and supply the electrons to the process chamber along the second direction; a PFG cage between the PFG and the process chamber, and the electrons migrate to the process chamber through the PFG cage; and a liner film covering at least a portion of an inner side wall of the process chamber, Wherein, the liner film comprises a conductive material, and The first direction and the second direction intersect each other.

2. The ion implantation apparatus according to claim 1, wherein: The liner film includes a graphite material.

3. The ion implantation apparatus according to claim 1, wherein: The liner film comprises: a first portion extending in the first direction and a third direction; and a second portion connected to the first portion and extending in the second direction, and The third direction intersects with the first direction and the second direction.

4. The ion implantation apparatus according to claim 3, wherein: The second portion is between the PFG cage and the process chamber.

5. The ion implantation apparatus according to claim 3, wherein: The second portion is in the PFG cage, and Wherein, the PFG cage and the process chamber are in contact with each other.

6. The ion implantation apparatus according to claim 3, wherein: At least a portion of the second portion protrudes from an outer sidewall of the process chamber.

7. The ion implantation apparatus according to claim 1, wherein: The surface of the spacer film is exposed to the ions, and Wherein, the surface of the liner film has at least one of a hatching pattern, a checkered pattern, and a dot pattern.

8. The ion implantation apparatus according to claim 1, wherein: The resistivity of the liner film is equal to that of carbon.

9. An ion implantation device comprising: a process chamber into which a substrate is loaded, wherein an ion implantation process of irradiating ions along a first direction toward an upper surface of the substrate is performed in the process chamber, Wherein, the process chamber comprises: a first inner side wall extending in the first direction and the second direction, a second inner side wall extending in the first direction and the second direction, and Facing the first inner side wall, A third inner side wall extends in the first direction and the third direction, a fourth inner side wall extending in the first direction and the third direction, and facing the third inner side wall; an ion generation chamber adjacent to the process chamber in the first direction, and the ion generation chamber is configured to generate the ions and supply the ions to the process chamber along the first direction; a flooded plasma gun PFG, spaced apart from the third inner sidewall of the process chamber in the second direction, and the PFG is configured to generate electrons and supply the electrons to the process chamber along the second direction; a PFG cage between the third inner sidewall of the process chamber and the PFG, and the electrons migrate to the process chamber through the PFG cage; and a pair of liner films covering at least a portion of at least one of the first inner sidewall, the second inner sidewall, and the third inner sidewall of the process chamber, wherein the pair of liner films are spaced apart from each other in the third direction and face each other in the third direction, and The surfaces of the pair of liner films have at least one of a hatching pattern, a checkered pattern, and a dot pattern.

10. The ion implantation apparatus according to claim 9, wherein: The resistivity of one of the pair of liner films is equal to the resistivity of carbon.

11. The ion implantation apparatus according to claim 9, wherein: One of the pair of liner films includes a conductive material.

12. The ion implantation apparatus according to claim 9, wherein: One of the pair of liner films comprises: a first portion extending in the first direction and the third direction; and A second portion is connected to the first portion and extends in the second direction.

13. The ion implantation apparatus according to claim 12, wherein: The second portion is between the PFG cage and the process chamber.

14. The ion implantation apparatus according to claim 12, wherein: The second portion is in the PFG cage, and Wherein, the PFG cage and the process chamber are in contact with each other.

15. The ion implantation apparatus according to claim 12, wherein: At least a portion of the second portion protrudes from a sidewall of the process chamber.

16. A method for manufacturing a semiconductor device, the method comprising: loading the substrate into the ion implantation apparatus; as well as performing an ion implantation process on the substrate, Wherein, the ion implantation device comprises: a process chamber into which a substrate is loaded and in which the ion implantation process is performed on the substrate; an ion generation chamber adjacent to the process chamber in a first direction, wherein the ion generation chamber is configured to generate ions and supply the ions to the process chamber along the first direction; a flooded plasma gun PFG adjacent to the process chamber in a second direction, wherein the PFG is configured to generate electrons and supply the electrons to the process chamber along the second direction; a PFG cage between the PFG and the process chamber, and the electrons migrate to the process chamber through the PFG cage; and a liner film covering at least a portion of an inner side wall of the process chamber, Wherein, the liner film comprises a conductive material, The first direction and the second direction are perpendicular to each other.

17. The method according to claim 16, wherein: The liner film comprises: a first portion extending in the first direction and a third direction; and a second portion connected to the first portion and protruding in the second direction, and Wherein, the third direction is perpendicular to the first direction and the second direction.

18. The method according to claim 17, wherein: The second portion is in the PFG cage, and Wherein, the PFG cage and the process chamber are in contact with each other.

19. The method according to claim 16, wherein: The surface of the spacer film is exposed to the ions, and Wherein, the surface of the liner film has at least one of a hatching pattern, a checkered pattern, and a dot pattern.

20. The method according to claim 16, wherein: The resistivity of the liner film is equal to that of carbon.

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