Substrate processing apparatus and substrate processing method

Abstract

The invention provides a substrate processing apparatus and a substrate processing method. The substrate processing apparatus includes: a substrate supporting portion supporting a substrate; a first discharge unit including a first nozzle that discharges a first processing liquid to the substrate; a first measuring unit connected to the first nozzle and measuring a first charge amount of the first processing liquid discharged from the first nozzle; the bowl-shaped object is arranged around the substrate supporting part; a second measuring unit that measures a second electric charge amount of the first processing liquid dispersed from the substrate to the surface of the bowl; and a second discharge unit including a second nozzle that discharges a second processing liquid charged based on a difference between the first charge amount and the second charge amount to the substrate.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the benefit of priority from Korean Patent Application No. 10-2023-0122214 filed on September 14, 2023 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] The present disclosure relates to a substrate processing apparatus and a substrate processing method. Background Art

[0004] In order to manufacture semiconductor devices, liquid treatment processes have been widely used to treat substrates by supplying one or more treatment liquids to the substrates. Examples of liquid treatment processes include a coating process in which a photoresist is supplied to the substrate to form a liquid film on the substrate and a cleaning process in which a cleaning solution is supplied to the substrate to remove contaminants (e.g., particles, organic contaminants, or metal contaminants) remaining on the surface of the substrate.

[0005] Depending on the nature of the processing liquid used in the liquid treatment process, charging phenomena may occur in the substrate. When the substrate is charged, fine particles can be easily adsorbed onto the substrate, which can reduce the reliability of the process. Therefore, it is important to prevent the substrate from being charged or to properly remove the charged static electricity.

[0006] In particular, a technique is needed that can detect the amount of charge on a substrate and properly remove it while minimizing the impact on the substrate processing process. Summary of the invention

[0007] An aspect of the present disclosure is to provide a substrate processing apparatus and a substrate processing method capable of compensating for the amount of charges in a substrate while performing a chemical treatment process.

[0008] Another aspect of the present disclosure is to provide a substrate processing apparatus and a substrate processing method, which are capable of measuring the charge amount of a processing liquid discharged from a nozzle and the processing liquid spread on the surface of a bowl, calculating a predicted charge amount of the substrate, and charging the processing liquid supplied in a subsequent process to offset the charge amount of the substrate.

[0009] According to aspects of the present invention, a substrate processing device includes: a substrate supporting portion that supports a substrate; a first discharge unit that includes a first nozzle that discharges a first processing liquid to the substrate; a first measuring unit that is connected to the first nozzle and measures a first charge amount of the first processing liquid discharged from the first nozzle; a bowl that is arranged around the substrate supporting portion; a second measuring unit that measures a second charge amount of the first processing liquid spread from the substrate to a surface of the bowl; and a second discharge unit that includes a second nozzle that discharges a second processing liquid charged based on a difference between the first charge amount and the second charge amount to the substrate.

[0010] According to another aspect of the present disclosure, a substrate processing method includes: setting a substrate; discharging a first processing liquid from a first nozzle to the substrate; measuring a first charge amount of the first processing liquid discharged from the first nozzle; measuring a second charge amount of the first processing liquid spread from the substrate to a surface of a bowl disposed around the substrate; and discharging a second processing liquid charged based on a difference between the first charge amount and the second charge amount from a second nozzle to the substrate.

[0011] According to another aspect of the present disclosure, a substrate processing device includes: a substrate supporting portion that supports a substrate; a first nozzle that discharges a first processing liquid to the substrate; a first measuring unit that includes: a first nozzle electrode that is formed in at least a portion of the first nozzle; and a first current measuring circuit that is connected to the first nozzle electrode and measures a first charge amount of the first processing liquid discharged from the first nozzle; a bowl that is arranged around the substrate supporting portion and is connected to a recovery line that recovers the first processing liquid spread from the substrate; a second measuring unit that includes: a bowl electrode that is formed in at least a portion of the bowl; and a second current measuring circuit that is connected to the bowl electrode and measures a second charge amount of the first processing liquid spread from the substrate to a surface of the bowl; a second nozzle that discharges a second processing liquid to the substrate; and a charging unit that includes: a second nozzle electrode that is formed in at least a portion of the second nozzle; and a charging circuit that is connected to the second nozzle electrode and charges the second processing liquid based on a difference between the first charge amount and the second charge amount. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The above and other aspects, features and advantages of the present disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0013] Figure 1 A substrate processing apparatus according to an embodiment of the present disclosure is shown;

[0014] Figure 2shows a cross section of a first discharge unit of a substrate processing apparatus according to an embodiment of the present disclosure;

[0015] Figure 3 shows a cross section of a portion including a bowl in a substrate processing apparatus according to an embodiment of the present disclosure;

[0016] Figure 4A shows the arrangement of a bowl electrode in a substrate processing apparatus according to an embodiment of the present disclosure;

[0017] Figure 4B shows the arrangement of a bowl electrode in a substrate processing apparatus according to another embodiment of the present disclosure;

[0018] Figure 5 shows a cross section of a second discharge unit of a substrate processing apparatus according to an embodiment of the present disclosure;

[0019] Figure 6 is a flow chart of a substrate processing method according to an embodiment of the present disclosure;

[0020] Figure 7 is a flow chart of a substrate processing method according to an embodiment of the present disclosure; and

[0021] Figure 8 A cross section of a portion of a substrate processing apparatus according to another embodiment of the present disclosure is shown. DETAILED DESCRIPTION

[0022] Hereinafter, exemplary embodiments will be described in detail with reference to the accompanying drawings so that those skilled in the art to which the present disclosure belongs can easily practice these exemplary embodiments. In describing the present disclosure, if it is considered that the detailed description of known functions or structures unnecessarily shifts the main points of the present disclosure, such description will be omitted, but those skilled in the art will understand. Similarly, throughout the specification, similar figure numerals are used for similar parts. In the present disclosure, terms (such as "above", "upper", "upper surface", "below", "lower", "lower surface", "side surface", etc.) are determined based on the accompanying drawings, and in fact, the terms can be changed according to the direction in which the device or element is arranged.

[0023] It will be understood that when an element is referred to as being “connected to” another element, it can be directly connected to the other element, or intervening elements may also be present. Conversely, when an element is referred to as being “directly connected to” another element, there are no intervening elements. Furthermore, unless explicitly described to the contrary, the word “comprises” and variations such as “comprises” or “comprising” will be understood to imply the inclusion of stated elements but not the exclusion of any other elements.

[0024] Figure 1 A substrate processing apparatus according to an embodiment of the present disclosure is shown. The substrate processing apparatus 100 processes a substrate W by discharging a processing liquid onto a surface of the substrate W. The substrate processing apparatus 100 may be disposed in, for example, a chamber.

[0025] The processing liquid is a liquid substance including one or more components and can be used to process the surface of the substrate W. The processing liquid can be, for example, any of an anti-reflective coating solution that forms an anti-reflective coating (ARC) on the surface of the substrate W, a pre-wetting liquid, a cleaning liquid, pure water, or a chemical liquid including one or more organic solvent components.

[0026] refer to Figure 1 , the substrate processing apparatus 100 may include a substrate supporting portion 110 , a discharge unit 120 , and a bowl 130 .

[0027] The substrate supporting portion 110 may support a substrate W. The substrate W may be disposed on the substrate supporting portion 110 such that a lower surface of the substrate W is supported by the substrate supporting portion 110 and an upper surface of the substrate W is exposed.

[0028] The substrate supporting portion 110 may include a mounting table 111 including a mounting surface on which a substrate W is mounted, a rotation shaft 112 supporting the mounting table 111 at a lower portion thereof, and a rotation shaft driving unit 113 .

[0029] The rotating shaft 112 may rotate using energy generated by the rotating shaft driving unit 113. When the rotating shaft 112 rotates in one direction, the mounting table 111 connected to the rotating shaft 112 may rotate in the same direction as the rotating shaft 112.

[0030] The substrate processing apparatus 100 may include a discharge unit 120 which supplies one or more processing liquids to a substrate W disposed on a substrate supporting part 110 .

[0031] The discharge unit 120 may include a nozzle supporting portion 121 and one or more nozzles. The nozzle supporting portion 121 may support the one or more nozzles, and may adjust a horizontal or vertical position and angle of the one or more nozzles.

[0032] The discharge unit 120 may supply different process liquids to the substrate W. For example, the substrate treating apparatus 100 may include a first discharge unit supplying a first process liquid to the substrate W and a second discharge unit supplying a second process liquid different from the first process liquid.

[0033] Figure 2A cross section of a first discharge unit of a substrate processing apparatus 100 according to an embodiment of the present disclosure is shown.

[0034] Reference together Figure 1 and Figure 2 , the first discharge unit may include a first nozzle 122 .

[0035] The first discharge unit may discharge the first treatment liquid to the substrate W using the first nozzle 122. The first treatment liquid may include, for example, an anti-reflective coating solution.

[0036] The nozzle supporting part 121 may support the first nozzle 122. The nozzle supporting part 121 may adjust the position and angle of the first nozzle 122.

[0037] A first supply flow path 21 may be formed in the nozzle supporting portion 121 to supply the first process liquid to the first nozzle 122. A first exhaust flow path 22 connected to the first supply flow path 21 through which the first process liquid supplied from the first supply flow path 21 is exhausted toward the substrate W may be formed in the first nozzle 122.

[0038] The first process liquid supplied from a source of the first process liquid may be discharged to the substrate W through a first supply flow path 21 formed inside the nozzle support portion 121 and a first discharge flow path 22 formed inside the first nozzle 122 .

[0039] The substrate processing apparatus 100 may include a first measurement unit including a first nozzle electrode 123 and a first current measurement circuit 201. The first nozzle electrode 123 may be disposed on a surface of the first exhaust flow path 22 or inside the first nozzle 122.

[0040] In an implementation, the first nozzle electrode 123 may have a circular pillar shape surrounding the first exhaust flow path 22 .

[0041] In another embodiment, the first nozzle electrode 123 may have a shape surrounding at least a portion of the first exhaust flow path 22 .

[0042] The first nozzle electrode 123 may be connected to a first current measuring circuit 201 that measures current.

[0043] The first measuring unit measures the charge amount of the first treatment liquid discharged from the first nozzle 122 using the first nozzle electrode 123 and the first current measuring circuit 201 connected to the first nozzle electrode 123 .

[0044] For example, the first measuring unit may derive the charge amount of the first treatment liquid discharged from the first nozzle 122 based on a time-integrated value of the current flowing through the first nozzle electrode 123 .

[0045] The first nozzle electrode 123 may be coated with the first shielding film 123a. When the first nozzle electrode 123 is coated with the first shielding film 123a, when measuring the charge amount of the first processing liquid discharged from the first nozzle 122 to the substrate W, an error in the measurement value due to an external electric field may be reduced.

[0046] Figure 3 A cross section of a portion including a bowl 130 in a substrate processing apparatus 100 according to an embodiment of the present disclosure is shown.

[0047] Reference together Figure 1 and Figure 3 , the bowl 130 may be disposed around the substrate support portion 110. The bowl 130 may be installed to surround the substrate support portion 110, and a processing space in which one or more processing processes for the substrate W are performed may be provided within the bowl 130.

[0048] While the substrate treating apparatus 100 supplies the treating liquid to the substrate W and performs a treating process of the substrate W, a portion of the supplied treating liquid may spread from the substrate W to the surface of the bowl 130 .

[0049] In an embodiment, the bowl 130 may include an upper bowl 131 , a middle bowl 132 , and a lower bowl 133 .

[0050] The upper bowl 131 may be located above the mounting surface of the mounting table 111 on which the substrate W is disposed, the lower bowl 133 may be located below the mounting surface of the mounting table 111 , and the middle bowl 132 may be located at a height between the upper bowl 131 and the lower bowl 133 .

[0051] The substrate processing apparatus 100 may further include a second measuring unit including a bowl electrode and a second current measuring circuit 300 .

[0052] The bowl electrode may be disposed on a surface of the bowl 130 or inside the bowl 130. The bowl electrode may include a first bowl electrode 134, a second bowl electrode 135, and a third bowl electrode 136.

[0053] The first bowl electrode 134 may be disposed on a portion of the surface of the upper bowl 131 or inside the upper bowl 131. The second bowl electrode 135 may be disposed on a portion of the surface of the middle bowl 132 or inside the middle bowl 132. The third bowl electrode 136 may be disposed on a portion of the surface of the lower bowl 133 or inside the lower bowl 133.

[0054] Figure 4A and Figure 4B The arrangement of the first bowl electrode 134 , the second bowl electrode 135 , and the third bowl electrode 136 in the substrate processing apparatus 100 according to the embodiment of the present disclosure is shown.

[0055] In an embodiment, if Figure 4A As shown, when the substrate treating apparatus 100 is viewed from above, the first bowl electrode 134 a included in the upper bowl 131 may have a ring shape disposed along the circumference of the substrate supporting portion 110 .

[0056] In another embodiment, Figure 4B As shown, when the substrate processing apparatus 100 is viewed from above, the first bowl electrode 134b included in the upper bowl 131 may have an arc shape disposed along a portion of the circumference of the substrate support portion 110. For example, the first bowl electrode 134b may be disposed around the substrate support portion 110 at intervals of 90 degrees.

[0057] Figure 4A and Figure 4B The arrangement of the bowl electrodes shown may be similarly applied to the second bowl electrode 135 included in the middle bowl 132 or the third bowl electrode 136 included in the lower bowl 133 .

[0058] When a treatment process is performed on the substrate W, the bowl electrode may be disposed at one or more points around the substrate support portion 110 to which the treatment liquid is mainly emitted.

[0059] Alternatively, the bowl electrode may be disposed at one or more points around the substrate support portion 110 excluding portions where a large amount of deposits occur during a treatment process.

[0060] In addition to the ring shape or the circular arc shape, the bowl electrode may have other shapes, such as a circle, a square, a semicircle, or an ellipse.

[0061] The substrate processing apparatus 100 may further include a second current measurement circuit 300 for measuring the current of the bowl electrode. The second current measurement circuit 300 may include a first bowl current measurement circuit 301 , a second bowl current measurement circuit 302 , and a third bowl current measurement circuit 303 .

[0062] like Figure 3 As shown, the first bowl electrode 134 can be connected to a first bowl current measurement circuit 301 for measuring current, the second bowl electrode 135 can be connected to a second bowl current measurement circuit 302 for measuring current, and the third bowl electrode 136 can be connected to a third bowl current measurement circuit 303 for measuring current.

[0063] The second measuring unit may measure the amount of charge of the first processing liquid spread from the substrate W to the surface of the bowl 130 using the bowl electrode and a second current measuring circuit 300 connected to the bowl electrode.

[0064] For example, the second measuring unit may derive the charge amount of the first processing liquid spread onto the surface of the bowl 130 based on the time-integrated value of the current flowing through the first bowl electrode 134 , the second bowl electrode 135 , and the third bowl electrode 136 .

[0065] Figure 5 A cross section of a second discharge unit of a substrate processing apparatus according to an embodiment of the present disclosure is shown.

[0066] Reference together Figure 1 and Figure 5 , the second discharge unit may include a second nozzle 124 .

[0067] The second discharge unit may discharge the second treatment liquid to the substrate W using the second nozzle 124. The second treatment liquid may include, for example, a pre-wetting liquid.

[0068] The nozzle supporting portion 121 may support the second nozzle 124. The nozzle supporting portion 121 may adjust the position and angle of the second nozzle 124.

[0069] The second supply flow path 51 may be formed in the nozzle support portion 121 to supply the second process liquid to the second nozzle 124. Inside the second nozzle 124, a second exhaust flow path 52 may be formed to connect to the second supply flow path 51 and exhaust the second process liquid supplied from the second supply flow path 51 toward the substrate W.

[0070] The second process liquid supplied from the second process liquid source may be discharged to the substrate W through the second supply flow path 51 formed inside the nozzle support portion 121 and the second discharge flow path 52 formed inside the second nozzle 124 .

[0071] The substrate processing apparatus 100 may further include a third measuring unit and a charging unit.

[0072] The third measuring unit may include a supply flow path electrode 125 and a third current measuring circuit 501. The supply flow path electrode 125 may be provided on a surface of the second supply flow path 51 or inside the nozzle supporting portion 121.

[0073] In an implementation, the supply flow path electrode 125 may have a donut-shaped column surrounding the second supply flow path 51 .

[0074] In another embodiment, the supply flow path electrode 125 may have a shape surrounding at least a portion of the second supply flow path 51 .

[0075] The supply flow path electrode 125 may be connected to a third current measurement circuit 501 that measures current.

[0076] The third measuring unit may measure the charge amount of the second treatment liquid supplied to the second nozzle 124 through the second supply flow path 51 using the supply flow path electrode 125 and a third current measuring circuit 501 connected to the supply flow path electrode 125 .

[0077] For example, the third measurement unit may derive the charge amount of the second treatment liquid supplied to the second nozzle 124 through the second supply flow path 51 based on a time-integrated value of the current flowing through the supply flow path electrode 125 .

[0078] The charging unit may include a second nozzle electrode 126 and a charging circuit 502. The second nozzle electrode 126 may be disposed on a surface of the second discharge flow path 52 or inside the second nozzle 124.

[0079] In an implementation, the second nozzle electrode 126 may have a donut-shaped cylinder surrounding the second exhaust flow path 52 .

[0080] In another embodiment, the second nozzle electrode 126 may have a shape that surrounds at least a portion of the second exhaust flow path 52 .

[0081] The second nozzle electrode 126 may be coated with the second shielding film 126a. Since the second nozzle electrode 126 is coated with the second shielding film 126a, when the second processing liquid discharged from the second nozzle 124 to the substrate W is charged, the influence of the external electric field may be reduced.

[0082] The second nozzle electrode 126 may be connected to the charging circuit 502 .

[0083] The charging unit may charge the second treatment liquid discharged from the second nozzle 124 using the second nozzle electrode 126 and a charging circuit 502 connected to the second nozzle electrode 126 .

[0084] For example, the charging unit may charge the second processing liquid discharged from the second nozzle 124 so that the second processing liquid has a charge amount that offsets a charge amount of the substrate W.

[0085] The substrate processing apparatus 100 may further include a controller that controls each component of the substrate processing apparatus 100. For example, the controller may control the charging circuit 502.

[0086] The controller may calculate a predicted charge amount of the substrate W after performing a treatment process using the first treatment liquid. The predicted charge amount of the substrate W may be calculated based on a difference between the charge amount of the first treatment liquid discharged from the first nozzle 122 and the charge amount of the first treatment liquid spread from the substrate W to the surface of the bowl 130.

[0087] The controller may control the charging circuit 502 so that the second processing liquid has a charge amount that cancels out the predicted charge amount of the substrate W. For example, the controller may control the charging circuit 502 to apply a voltage to the second nozzle electrode 126 so that the charge amount of the second processing liquid cancels out the sum of the predicted charge amount of the substrate W after performing the treatment process using the first processing liquid and the charge amount of the second processing liquid supplied through the second supply flow path 51 of the second discharge unit.

[0088] In another embodiment, the substrate processing apparatus may include a plurality of nozzles connected to different nozzle supporting parts and discharging different processing liquids.

[0089] Refer to Figure 1 The substrate processing apparatus 100 may further include a recovery unit 140 that recovers the processing liquid used to process the substrate W. The recovery unit 140 may be connected to a lower portion of a bowl 130 installed to surround the substrate supporting portion 110 .

[0090] The recovery unit 140 may include one or more recovery lines. For example, the recovery unit 140 may include a recovery line extending downward from the bottom of the bowl 130.

[0091] Figure 6 1 is a flow chart of a substrate processing method according to an embodiment of the present disclosure. Figure 6 As shown, the substrate processing method includes an operation of setting a substrate (S610), an operation of discharging a first processing liquid from a first nozzle to the substrate (S620), an operation of measuring a first charge amount of the first processing liquid discharged from the first nozzle (S630), an operation of measuring a second charge amount of the first processing liquid spread from the substrate to a surface of a bowl set around the substrate (S640), and an operation of discharging a second processing liquid charged based on a difference between the first charge amount and the second charge amount from a second nozzle to the substrate (S650).

[0092] In the operation of discharging the first treatment liquid (S620), the first treatment liquid may include an anti-reflection coating solution. By supplying the first treatment liquid to the surface of the substrate, an anti-reflection film forming treatment process may be performed on the surface of the substrate.

[0093] In the operation of measuring the first charge amount (S630), the current flowing through the first nozzle electrode disposed on the surface of the flow path of the first nozzle or inside the first nozzle may be measured. The first charge amount may be derived based on a time-integrated value of the current flowing through the first nozzle electrode, for example.

[0094] In the operation of measuring the second charge amount (S640), the current flowing through the bowl electrode disposed on the bowl surface or inside the bowl may be measured. The second charge amount may be derived based on a time-integrated value of the current flowing through the bowl electrode, for example.

[0095] In the operation of discharging the second treatment liquid (S650), the second treatment liquid may include a pre-wetting liquid. By supplying the second treatment liquid onto the surface of the substrate, a pre-wetting treatment process may be performed on the surface of the substrate.

[0096] Since the second process liquid discharged to the substrate in the operation of discharging the second process liquid (S650) has a charge amount that offsets a predicted charge amount of the substrate, adverse effects occurring in a subsequent substrate treatment process due to a charging phenomenon of the substrate may be reduced.

[0097] Figure 7 Detailed flow chart of the operation (S650) of discharging the second treated liquid. Figure 7 As shown, the operation of discharging the second processing liquid (S650) may include an operation of measuring a third charge amount of the second processing liquid supplied to the second nozzle through the supply flow path (S651), an operation of calculating a predicted charge amount of the substrate based on a difference between the first charge amount and the second charge amount (S652), an operation of calculating a fourth charge amount based on the sum of the predicted charge amount and the third charge amount (S653), and an operation of applying a voltage to the second nozzle electrode based on the fourth charge amount and the discharge time of the second processing liquid (S654).

[0098] In the operation of measuring the third charge amount (S651), the current flowing through the supply flow path electrode provided on the surface of the supply flow path for supplying the second treatment liquid or inside the supply flow path can be measured. For example, the third charge amount can be derived based on the time integral value of the current flowing through the supply flow path electrode.

[0099] In the operation of calculating the predicted charge amount of the substrate (S652), a first charge amount may be derived based on a time-integrated value of the current flowing through the first nozzle electrode, and a second charge amount may be derived based on a time-integrated value of the current flowing through the bowl electrode. For example, when the value of the first charge amount is Q1 and the value of the second charge amount is Q2, the predicted charge amount of the substrate may be calculated as (Q1-Q2).

[0100] In the operation (S653) of calculating the fourth charge amount, for example, when the predicted charge amount of the substrate has a value (Q1-Q2) and the third charge amount has a value Q3, the value Q4 of the fourth charge amount may be calculated to have a value satisfying (Q1-Q2)+(Q3+Q4)=0. That is, the fourth charge amount may be calculated as (-Q1+Q2-Q3).

[0101] Figure 8 FIG. 2 shows a portion of a substrate processing apparatus according to another embodiment of the present disclosure. Figure 8 As shown, the substrate processing apparatus may include an upper bowl 801 and a lower bowl 802 .

[0102] The upper bowl 801 may be located above a mounting surface of the mounting table 111 on which the substrate W is disposed, and the lower bowl 802 may be located below the mounting surface of the mounting table 111 .

[0103] The substrate processing apparatus may further include a bowl electrode and a bowl current measurement circuit 820 .

[0104] The bowl electrode 810 may include an upper bowl electrode 811 disposed in a portion of a surface of the upper bowl 801 or disposed inside the upper bowl 801 and a lower bowl electrode 812 disposed in a portion of a surface of the lower bowl 802 or disposed inside the lower bowl 802 .

[0105] The bowl current measurement circuit 820 may include an upper current measurement circuit 821 and a lower current measurement circuit 822. The upper bowl electrode 811 may be connected to the upper current measurement circuit 821 that measures current. The lower bowl electrode 812 may be connected to the lower current measurement circuit 822 that measures current.

[0106] exist Figure 8 In the illustrated embodiment, the substrate processing apparatus can measure the charge amount of the processing liquid spread from the substrate W to the surface of the upper bowl 801 and the surface of the lower bowl 802 using the upper bowl electrode 811 , the lower bowl electrode 812 , and the bowl current measurement circuit 820 .

[0107] Even when the number and shape of the bowls are Figure 1 , Figure 3 and Figure 8 While the example shown is different, if the bowl is arranged so that the processing liquid spreads onto the surface of the bowl, the above-mentioned substrate processing method can be similarly applied by measuring the charge amount of the processing liquid spread onto the surface of the bowl.

[0108] The present disclosure can provide a substrate processing apparatus and a substrate processing method, which can compensate for the charge amount of a substrate while performing a pre-wetting treatment process through the above configuration.

[0109] Embodiments of the present disclosure may provide a substrate processing apparatus and a substrate processing method, which are capable of measuring the charge amount of a processing liquid discharged from a nozzle and the processing liquid spread onto the surface of a bowl, calculating a predicted charge amount of the substrate, and charging the processing liquid supplied in subsequent processing to offset the charge amount of the substrate.

[0110] In addition, when describing the present disclosure, "~component" or "unit" may be implemented by various methods, for example, a processor, a program instruction executed by a processor, a software module, a microcode, a computer program product, a logic circuit, an application specific integrated circuit, firmware, etc.

[0111] The content of the method disclosed in the embodiments of the present application can be directly implemented with a hardware processor, or can be implemented and completed by a combination of hardware modules and software modules between processors. The software module can be stored in a conventional storage medium, such as a random access memory, a flash memory, a read-only memory, a programmable read-only memory, or an electrically erasable programmable memory, a register, etc. The storage medium is located in a memory, and the processor reads the information stored in the memory and combines it with hardware to complete the content of the above method. In order to prevent repetition, a detailed description is omitted here.

[0112] In the implementation process, each content of the above method can be completed by instructions in the form of software between processors or logical integrated circuits of hardware. The content of the method disclosed in the embodiment of the present application can be directly implemented by a hardware processor, or can be implemented and completed by a combination of hardware modules and software modules between processors. The software module can be stored in a conventional storage medium, such as a random access memory, a flash memory, a read-only memory, a programmable read-only memory, or an electrically erasable programmable memory, a register, etc. The storage medium is located in a memory, and the processor reads the information stored in the memory and combines it with hardware to complete the content of the above method.

[0113] That is, those skilled in the art will appreciate that each exemplary unit and algorithmic operation described in the embodiments disclosed herein can be combined and implemented by electronic hardware or a combination of computer software and electronic hardware. Whether these functions are performed by hardware or software is determined by the design constraints of the specific application and technical method. Those skilled in the art may use different methods to implement the described functionality for each specific application, but such implementation should not be considered beyond the scope of this application.

[0114] In some embodiments provided in the present application, it should be understood that the disclosed devices and methods can be implemented in other ways. For example, the above-mentioned device embodiments are merely illustrative. For example, the division of units is merely a type of logical function division, and there may be other division methods in actual implementation. For example, multiple units or components can be combined with another system or integrated into another system, or certain features can be ignored or not performed. At the same time, the connection or direct connection or communication connection between each other shown or described can be an indirect connection or communication connection through some interfaces, devices or units, and can be electrical, mechanical or other forms.

[0115] The units described above as independent components may be physically separated, and the components shown as units may or may not be physical units, i.e., they may be located in one location or distributed over multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0116] That is, each functional unit in each embodiment of the present application may be integrated into one processing unit, each unit may exist independently, or two or more units may be integrated into one unit.

[0117] If the above functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a single computer-readable storage medium. Based on this understanding, the main contribution of the technical solution of the present application to the prior art or the part of the technical solution can be implemented in the form of a software product, and the computer software product can be stored in a storage medium, so that a computing device including some instructions (which can be a personal computer, a server or a network device, etc.) can perform all or part of the steps of the method described in each embodiment of the present application. The above storage medium includes various media that can store program codes, such as USB memory, mobile hard disk, read-only memory (ROM), random access memory (RAM), disk or CD-ROM.

[0118] The present disclosure is not limited by the aforementioned embodiments and drawings. The scope of the present disclosure is defined by the appended claims, and those skilled in the art should understand that various forms of replacement, modification and change may be made without departing from the technical spirit of the present disclosure as set forth in the claims.

Claims

1. A substrate processing device, comprising: a substrate supporting portion for supporting a substrate; a first discharge unit including a first nozzle for discharging a first processing liquid onto the substrate; a first measuring unit connected to the first nozzle and measuring a first charge amount of the first treatment liquid discharged from the first nozzle; a bowl disposed around the substrate support portion; a second measuring unit for measuring a second charge amount of the first processing liquid spread from the substrate to the surface of the bowl; as well as A second discharge unit includes a second nozzle that discharges a second processing liquid charged based on a difference between the first charge amount and the second charge amount to the substrate.

2. The substrate processing apparatus according to claim 1, wherein: The first measuring unit comprises: a first nozzle electrode disposed on a surface of a flow path of the first nozzle or inside the first nozzle; and A first current measurement circuit is connected to the first nozzle electrode.

3. The substrate processing apparatus according to claim 2, wherein: The first nozzle electrode is coated with a shielding film for shielding an external electric field.

4. The substrate processing apparatus according to claim 1, wherein: The second measuring unit comprises: a bowl electrode, disposed on the surface of the bowl or inside the bowl; and A second current measurement circuit is connected to the bowl electrode.

5. The substrate processing apparatus according to claim 4, wherein: The bowl-shaped object comprises: an upper bowl positioned above a mounting surface of the substrate support portion on which the substrate is disposed; a lower bowl located below the mounting surface; and The middle bowl is located between the upper bowl and the lower bowl, and the bowl electrode comprises: a first bowl electrode disposed in at least a portion of the upper bowl; a second bowl electrode disposed in at least a portion of the lower bowl; and A third bowl electrode is disposed in at least a portion of the middle bowl.

6. The substrate processing apparatus according to claim 1, wherein: The second discharging unit comprises: a third measuring unit that measures a third charge amount of the second treatment liquid supplied to the second nozzle through the supply flow path; and A charging unit charges the second treatment liquid discharged from the second nozzle.

7. The substrate processing apparatus according to claim 6, wherein: The third measuring unit comprises: a supply flow path electrode disposed on a surface of the supply flow path or inside the supply flow path; and A third current measurement circuit is connected to the supply flow path electrode.

8. The substrate processing apparatus according to claim 6, wherein: The charging unit comprises: a second nozzle electrode disposed on a surface of a flow path of the second nozzle or inside the second nozzle; and A charging circuit is connected to the second nozzle electrode.

9. The substrate processing apparatus according to claim 8, further comprising: A controller controls the charging circuit. wherein the controller calculates a predicted charge amount of the substrate based on a difference between the first charge amount and the second charge amount, and controls the charging circuit so that the second processing liquid discharged from the second nozzle to the substrate has a fourth charge amount that offsets the predicted charge amount.

10. The substrate processing apparatus according to claim 1, wherein: The first treatment liquid is an anti-reflective coating solution, and The second treatment liquid is a pre-wet liquid.

11. A substrate processing method, comprising: Setting a substrate; discharging a first processing liquid from a first nozzle onto the substrate; measuring a first charge amount of the first treatment liquid discharged from the first nozzle; measuring a second charge of the first process liquid dispersed from the substrate to a surface of a bowl disposed around the substrate; as well as A second processing liquid charged based on a difference between the first charge amount and the second charge amount is discharged from a second nozzle to the substrate.

12. The substrate processing method according to claim 11, wherein: Measuring the first charge amount includes measuring a current flowing through a first nozzle electrode disposed on a surface of a flow path of the first nozzle or inside the first nozzle.

13. The substrate processing method according to claim 10, wherein: Measuring the second charge amount includes measuring a current flowing through a bowl electrode, wherein the bowl electrode is disposed on a surface of the bowl or inside the bowl.

14. The substrate processing method according to claim 11, wherein: Discharging the second process liquid comprises: measuring a third charge amount of the second treatment liquid supplied to the second nozzle through the supply flow path; and The second treatment liquid discharged from the second nozzle is charged so that the second treatment liquid has a fourth charge amount.

15. The substrate processing method according to claim 14, wherein: Measuring the third charge amount includes measuring a current flowing through a supply flow path electrode, the supply flow path electrode being disposed on a surface of the supply flow path or inside the supply flow path.

16. The substrate processing method according to claim 14, wherein: Charging the second process liquid comprises: calculating a predicted charge amount of the substrate based on a difference between the first charge amount and the second charge amount; and The fourth charge amount is calculated based on the sum of the predicted charge amount and the third charge amount.

17. The substrate processing method according to claim 16, wherein: Charging the second treatment liquid further includes applying a voltage to a second nozzle electrode disposed on a surface of a flow path of the second nozzle or inside the second nozzle based on the fourth charge amount and a discharge time of the second treatment liquid.

18. The substrate processing method according to claim 11, wherein: The first processing liquid is an anti-reflective coating solution, and The second treatment liquid is a pre-wet liquid.

19. A substrate processing device comprising: a substrate supporting portion for supporting a substrate; a first nozzle for discharging a first processing liquid onto the substrate; a first measuring unit including: a first nozzle electrode formed in at least a portion of the first nozzle; and a first current measuring circuit connected to the first nozzle electrode and measuring a first charge amount of the first treatment liquid discharged from the first nozzle; a bowl disposed around the substrate support portion and connected to a recovery line that recovers the first process liquid dispersed from the substrate; a second measuring unit including: a bowl electrode formed in at least a portion of the bowl; and a second current measuring circuit connected to the bowl electrode and measuring a second charge amount of the first process liquid spread from the substrate to a surface of the bowl; a second nozzle to discharge a second processing liquid toward the substrate; and A charging unit includes: a second nozzle electrode formed in at least a portion of the second nozzle; and a charging circuit connected to the second nozzle electrode and charging the second processing liquid based on a difference between the first charge amount and the second charge amount.

20. The substrate processing apparatus according to claim 19, wherein: The first nozzle electrode and the second nozzle electrode are coated with a shielding film that shields an external electric field.

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