Light-emitting device and method for manufacturing light-emitting device

Abstract

The embodiment of the invention provides a light-emitting device and a preparation method of the light-emitting device, and relates to the technical field of light emitting. The light emitting device includes: a driving substrate; a plurality of LED chips, the plurality of LED chips are arranged at one side of the driving substrate, and the LED chips are electrically connected with the driving substrate; the wavelength conversion layer is integrally arranged, the wavelength conversion layer comprises a plurality of first grooves which are arranged at intervals, the first grooves and the LED chips are arranged in a one-to-one correspondence mode, and at least parts of the LED chips are contained in the first grooves; the first groove is configured to be aligned with the LED chip, and the wavelength conversion layer is configured to emit light with a target wavelength based on excitation of the LED chip. The embodiment of the invention is used for solving the problems of low LED packaging integration level and complex structure.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of light emitting technology, and more specifically, to a light emitting device and a method for preparing the light emitting device. Background Art

[0002] With the development of transportation, cars and other means of transportation are gradually applied to people's daily travel scenes. The safety of cars and other means of transportation is one of the performance indicators that users pay attention to. Among them, in night travel scenes, accidents are easily caused by factors such as poor visual lighting conditions, bad habits of turning on and off the lights, too bright or too dark. Therefore, safe and effective lighting can improve driving safety and reduce accidents. With the development of electronic information technology, intelligent lighting systems, such as adaptive headlights, have emerged; and after many technological changes, the current matrix headlight intelligent lighting has developed rapidly and has been applied to some vehicles.

[0003] Among them, the matrix headlight is composed of a plurality of light emitting diodes (LEDs), for example, the matrix headlight may include one or more rows of LEDs arranged in a regular pattern. The matrix headlight can control the on and off of each LED individually by receiving instructions from the controller, so that the light distribution projected by the headlight can be controlled relatively quickly to make it more in line with the driving scene requirements; for example, the light at the oncoming vehicle and the forward vehicle can be controlled to dim or extinguish, and the pedestrians on both sides of the road can be illuminated, which greatly improves driving safety.

[0004] Currently, matrix headlights, as a matrix LED light source, can be composed of several independent light-emitting units, each of which is a packaged independent LED device, that is, several independently packaged LED devices are integrated one by one on a printed circuit board (PCB). However, due to the limitations of the metal circuit and patch process of the PCB, the distance between two LEDs is large, and the distance is usually in the millimeter or centimeter level. Therefore, the number of LEDs in most matrix LED light sources is small, for example, 8, 12, 24 or 64, and it is difficult to expand to a larger number. In addition, due to the large spacing between the LEDs, a large dark light area will be formed in the middle of the light emitted by the two LEDs, and the cut-off line is not obvious. In order to solve these problems, a special silicone lens is often required to readjust the light emitted by each LED through a silicone light guide column, which makes the overall structure of the matrix LED light source more complicated. Summary of the invention

[0005] The exemplary embodiments of the present application provide a light-emitting device and a method for preparing the light-emitting device, which are used to solve the problem of low packaging integration.

[0006] The technical solutions provided by the embodiments of this application are as follows:

[0007] In a first aspect, an embodiment of the present application provides a light emitting device, comprising:

[0008] Driver substrate;

[0009] A plurality of LED chips, wherein the plurality of LED chips are arranged on one side of the driving substrate, and the LED chips are electrically connected to the driving substrate;

[0010] A wavelength conversion layer, wherein the wavelength conversion layer is integrally provided, and the wavelength conversion layer comprises a plurality of first grooves arranged at intervals, wherein the first grooves are arranged in one-to-one correspondence with the LED chips, and at least a portion of the LED chips is accommodated in the first grooves;

[0011] The first groove is configured to align the LED chip, and the wavelength conversion layer is configured to emit light with a target wavelength based on excitation of the LED chip.

[0012] In a second aspect, an embodiment of the present application provides a method for preparing a light-emitting device, which is used to form the light-emitting device provided in the first aspect. The method for preparing the light-emitting device includes:

[0013] Providing a wavelength conversion layer and an LED substrate; the LED substrate includes a driving substrate and an LED chip electrically connected to the driving substrate;

[0014] At least a first groove is formed on a side of the wavelength conversion layer away from the base substrate; the first groove is arranged in a one-to-one correspondence with the LED chip;

[0015] Based on the alignment relationship between the first groove and the LED chip, aligning and integrating the LED substrate and the wavelength conversion substrate;

[0016] The wavelength conversion layer is configured to emit light with a target wavelength based on excitation by the LED chip; at least a portion of the LED chip is accommodated in the first groove.

[0017] It can be seen from the above technical scheme that in the light-emitting device and the preparation method of the light-emitting device provided in the embodiments of the present application, a plurality of LED chips are integrated and electrically connected on one side of the driving substrate, the wavelength conversion layer is an integrally arranged structure and includes a plurality of first grooves, the first grooves correspond to the LED chips one by one and are arranged in alignment, so that the driving substrate with the integrated LED chip and the wavelength conversion layer are aligned and integrated, thereby realizing the integrated packaging of multiple LED chips, improving the packaging integration, and facilitating the expansion of a larger number of LED chips; at the same time, since the LED chips do not need to be individually packaged, it is also beneficial to reduce the spacing between adjacent LED chips, and there is no need to additionally set up other optical structures for adjusting the light, so that the entire light-emitting device can emit light uniformly as a whole, and the overall structure is simpler. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the implementation methods in the embodiments of the present application or the related technologies, the following is a brief introduction to the drawings required for use in the embodiments or the related technology descriptions. Obviously, the drawings described below are some embodiments of the present application, and a person skilled in the art can also obtain other drawings based on these drawings.

[0019] Figure 1 A schematic structural diagram of a light emitting device provided in an embodiment of the present application is shown;

[0020] Figure 2 A schematic structural diagram of another light emitting device provided in an embodiment of the present application is shown;

[0021] Figure 3 A schematic structural diagram of another light emitting device provided in an embodiment of the present application is shown;

[0022] Figure 4 A schematic structural diagram of another light emitting device provided in an embodiment of the present application is shown;

[0023] Figure 5 A partial enlarged structural schematic diagram of a light emitting device provided in an embodiment of the present application is shown;

[0024] Figure 6 A schematic diagram of a projection structure of a light emitting device provided in an embodiment of the present application is shown;

[0025] Figure 7 Another schematic diagram of a projection structure of a light emitting device provided in an embodiment of the present application is shown;

[0026] Figure 8 A schematic diagram showing another projection structure of the light emitting device provided in an embodiment of the present application is shown;

[0027] Fig. 9Another partially enlarged structural schematic diagram of the light emitting device provided in an embodiment of the present application is shown;

[0028] Fig.10 A schematic diagram showing the structure of a wavelength conversion layer of a light-emitting device provided in an embodiment of the present application is shown;

[0029] Fig.11 A schematic structural diagram of another light emitting device provided in an embodiment of the present application is shown;

[0030] Fig.12 A schematic structural diagram of another light emitting device provided in an embodiment of the present application is shown;

[0031] Fig.13 A schematic diagram showing a process of a method for preparing a light-emitting device provided in an embodiment of the present application is shown;

[0032] Fig.14 A schematic structural diagram of a wavelength conversion substrate provided in an embodiment of the present application is shown;

[0033] Fig.15 A schematic diagram of the structure of an LED substrate provided in an embodiment of the present application is shown;

[0034] Fig.16 Shows Fig.13 A schematic structural diagram of the wavelength conversion layer in S220 of the preparation method is shown;

[0035] Fig.17 Shows Fig.13 A schematic structural diagram of the light emitting device in S230 of the preparation method is shown;

[0036] Fig.18 A schematic diagram showing a process of another method for preparing a light-emitting device provided in an embodiment of the present application is shown;

[0037] Fig.19 A schematic structural diagram of another wavelength conversion substrate provided in an embodiment of the present application is shown;

[0038] Fig. 20 A schematic structural diagram of another wavelength conversion substrate provided in an embodiment of the present application is shown;

[0039] Fig.21 A schematic structural diagram of another light emitting device provided in an embodiment of the present application is shown;

[0040] Fig. 22 A schematic structural diagram of another wavelength conversion substrate provided in an embodiment of the present application is shown;

[0041] Fig.23 A schematic structural diagram of another light emitting device provided in an embodiment of the present application is shown;

[0042] Fig.24 A schematic structural diagram of another wavelength conversion substrate provided in an embodiment of the present application is shown;

[0043] Fig.25 A schematic structural diagram of another light-emitting device provided in an embodiment of the present application is shown. DETAILED DESCRIPTION

[0044] In order to make the purpose and implementation method of the present application clearer, the exemplary implementation method of the present application will be clearly and completely described below in conjunction with the drawings in the exemplary embodiments of the present application. Obviously, the described exemplary embodiments are only part of the embodiments of the present application, rather than all the embodiments.

[0045] It should be noted that the brief description of terms in this application is only for the convenience of understanding the embodiments described below, and is not intended to limit the embodiments of this application. Unless otherwise specified, these terms should be understood according to their common and usual meanings.

[0046] The terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover but not exclude inclusion, for example, a product or device comprising a list of components is not necessarily limited to all the components expressly listed but may include other components not expressly listed or inherent to such product or device.

[0047] In response to the problems in the background technology, in order to improve the integration of LED packaging, in an embodiment of the present application, a light-emitting device that can be used as a matrix LED light source and a preparation method thereof are proposed. By integrating and electrically connecting multiple unpackaged LED chips to a separate driving substrate, and aligning and packaging them with a wavelength conversion layer having multiple first grooves, and then using them in combination with a PCB, the number of LED chips in the matrix LED light source can be increased, the spacing between adjacent LED chips can be reduced, complex optical components can be reduced, and the performance of the matrix LED light source can be improved.

[0048] The light-emitting device proposed in the embodiment of the present application can be applied to LED lighting scenes or display scenes, for example, it can be used in smart car lights, adaptive driving beams (Adaptive Driving Beam, ADB) or other lighting fixtures; or it can be applied to monochrome display devices. It can be understood that since the wavelength conversion layer in the technical solution proposed in the present application is an integrated monochrome wavelength conversion layer, when the light-emitting device is applied to the display scene, monochrome display can be achieved.

[0049] The light-emitting device and the method for preparing the light-emitting device provided in the embodiments of the present application are exemplarily described below in conjunction with the accompanying drawings.

[0050] For example, Figure 1FIG. 1 shows a schematic diagram of the structure of a light emitting device provided in an embodiment of the present application. Figure 1 As shown, the light emitting device 10 may include: a wavelength conversion layer 111 , a driving substrate 121 and an LED chip 122 ; the LED chip 122 is integrated and electrically connected to one side of the driving substrate 121 to form an LED substrate 12 .

[0051] The LED substrate 12 includes a driving substrate 121 and a plurality of LED chips 122 disposed on one side of the driving substrate 121 and electrically connected to the driving substrate 121 . The wavelength conversion layer 111 is configured to emit light with a target wavelength based on excitation of the LED chips 122 .

[0052] The driving substrate 121 may have a circuit structure therein for transmitting an electrical signal for the LED chip 122 to the LED chip 122 to drive the LED chip 122 to emit light. The LED chip 122 may have a cathode and an anode, and the cathode and the anode of the LED chip 122 are electrically connected to the driving substrate 121 respectively to form an electrical signal loop between the LED chip 122 and the driving substrate 121, so as to emit light based on the electrical signal transmitted by the driving substrate 121.

[0053] Exemplarily, the LED chip 122 may include a cathode pin and an anode pin, and the driving substrate 121 may include a connection structure arranged corresponding to the pins of the LED chip 122, such as pins, solder balls, pads and other structures; the electrical connection between the LED chip 122 and the driving substrate 121 is achieved through the electrical connection between the pins and the corresponding connection structures.

[0054] For example, the cathode pin and the anode pin of the LED chip 122 may be located on the same side of the LED chip 122, such as Figure 1 It can also be located on different sides of the LED chip 122, Figure 1 For example, the LED chip 122 can be electrically connected to the driving substrate 121 in a front-mounted manner, or in a flip-mounted manner, or in a side-mounted manner, which is not limited here.

[0055] For example, the LED chip 122 may be a chip that emits light from the bottom, top, or side, which is not limited here. The light color of the LED chip 122 may be blue or other colors, which is not limited here.

[0056] The wavelength conversion layer 111 is an optical film layer or optical element that emits light with a target wavelength by photoluminescence in response to the light irradiated thereon. Exemplarily, the wavelength conversion layer may include a quantum dot conversion material or a fluorescent conversion material. The wavelength conversion layer may specifically be a fluorescent sheet, a fluorescent layer, or a quantum dot layer, which is not limited here. In the embodiment of the present disclosure, the light irradiated onto the wavelength conversion layer 111 is emitted by the LED chip 122. Based on the principle that energy cannot be increased out of thin air, the target wavelength of the light emitted by the wavelength conversion layer 111 is smaller than the wavelength of the light emitted by the LED chip 122 itself. For example, the light emitted by the LED chip 122 may be blue light, and the light excited by the wavelength conversion layer 111 based on this may be red light, green light, or other light with less energy than blue light, which is not limited here.

[0057] Exemplarily, taking fluorescence as an example, the wavelength conversion layer 111 may be a hard wavelength conversion layer, such as a fluorescent sheet made of glass or ceramic; or, the wavelength conversion layer 111 may also be a soft wavelength conversion layer, for example, a fluorescent layer formed by using fluorescent materials using spraying, spin coating and other processes. The type of fluorescent material is not limited here, and it can be any one or several fluorescent materials known to those skilled in the art.

[0058] In the embodiment of the present application, the wavelength conversion layer 111 is an integrated structure, and the LED substrate 12 is an integrated structure. The wavelength conversion layer 111 includes a plurality of first grooves 1111, and the first grooves 1111 are configured to align the LED chips 122; the LED substrate 12 and the wavelength conversion layer 111 are aligned and integrated: the LED chips 122 are aligned with the first grooves 1111, and at least part of the LED chips 122 is accommodated in the first grooves 1111.

[0059] For example, refer to Figure 1 The wavelength conversion layer 111 has a plurality of first grooves 1111 on a side facing the LED substrate 12, and the LED substrate 12 is electrically connected to a plurality of LED chips 122 on a side of the driving substrate 121 facing the wavelength conversion layer 111; the LED chip 122 is aligned with the first grooves 1111, which is conducive to realizing the alignment and integrated packaging between the LED substrate 12 and the wavelength conversion layer 111; the LED chip 122 is at least partially accommodated in the corresponding first grooves 1111, and the LED chip 122 and the first grooves 1111 can be used as alignment reference structures to realize the precise alignment between the LED substrate 12 and the wavelength conversion layer 111, and the LED chip 122 and the first grooves 1111 are mutually embedded based on the above-mentioned accommodation relationship, which can also improve the overall structural stability of the light-emitting device 10, which is conducive to improving the service life of the light-emitting device 10.

[0060] For example, Figure 1Taking the orientation shown as an example, the top of the LED chip 122 can be partially embedded in the first groove 1111. In other embodiments, the LED chip 122 can also be embedded in the first groove 1111 as a whole to fully utilize the light emitted from all directions of the LED chip 122 to excite the wavelength conversion layer 111 to emit light, thereby improving the light emission efficiency.

[0061] For example, Figure 1 As shown, the number of the first grooves 1111 is 6, the number of the LED chips 122 is 6, the LED chips 122 correspond to the first grooves 1111 one by one, and each LED chip 122 and the part of the wavelength conversion layer 111 corresponding to the corresponding first groove 1111 can be equivalent to a light-emitting unit or a pixel unit. Figure 1 Based on this, by controlling the light emission of the LED chip 122, the light emission of the light emitting unit can be controlled to meet different light type lighting requirements.

[0062] In other embodiments, the number of first grooves 1111 and the number of LED chips 122 may be other numbers respectively, and the number ratio and position correspondence between the first grooves 1111 and the LED chips 122 may also be other ratios and other relationships, which are not limited here.

[0063] In the light-emitting device 10 provided in the embodiment of the present application, multiple LED chips 122 are integrated and packaged. Specifically, a driving substrate 121 and multiple LED chips 122 electrically connected to the driving substrate 121 are provided, and the wavelength conversion layer 111 includes multiple first grooves 1111. The LED chips 122 are aligned with the first grooves 1111, so that the LED substrate 12 and the wavelength conversion layer 111 are aligned and integrated, thereby realizing the integrated packaging of multiple LED chips 122, improving the packaging integration, and facilitating the expansion of a larger number of LED chips 122; at the same time, since the LED chips 122 do not need to be individually packaged, it is also beneficial to reduce the distance between adjacent LED chips 122, and there is no need to additionally set up other optical structures for adjusting the light, so that the entire light-emitting device 10 can emit light evenly as a whole, and the overall structure is simpler.

[0064] In some embodiments, Figure 2 FIG. 2 shows a schematic diagram of the structure of another light emitting device provided in an embodiment of the present application. Figure 1 Based on Figure 2In the light-emitting device 10, the wavelength conversion layer 111 may further include a second groove 1112; the second groove 1112 is disposed between adjacent first grooves 1111 and penetrates the wavelength conversion layer 111 in the thickness direction of the wavelength conversion layer 111; the second groove 1112 is configured to divide different wavelength conversion units 1110 in the wavelength conversion layer 111, thereby realizing the division of pixel units and avoiding optical crosstalk between adjacent pixel units.

[0065] The second groove 1112 is configured to divide the pixel unit in the wavelength conversion layer 111. Since the first groove 1111 accommodates the LED chip 122 and is used to form a light-emitting unit, the second groove 1112 may be disposed at least partially around the first groove 1111.

[0066] In the wavelength conversion layer 111, the second groove 1112 is along the thickness direction of the wavelength conversion layer 111, that is, Figure 2 The dotted line in FIG. 1 extends through the wavelength conversion layer 111 to divide the wavelength conversion layer 111 into a plurality of different pixel units. This arrangement facilitates independent control of the light output of each pixel unit and reduces the light crosstalk between different pixel units.

[0067] Exemplarily, the depth of the second groove 1112 is equal to the thickness of the wavelength conversion layer 111 .

[0068] In other embodiments, the second groove 1112 may also be configured as a groove having a depth greater than that of the first groove 1111, and does not penetrate the wavelength conversion layer 111. In this case, the depth of the second groove 1112 may be less than the thickness of the wavelength conversion layer 111, and greater than 1 / 2 of the thickness of the wavelength conversion layer 111; the depth of the first groove 1111 may be less than the thickness of the wavelength conversion layer, for example, less than 1 / 2 of the thickness of the wavelength conversion layer 111, which is not limited herein.

[0069] In the light-emitting device 10 provided in the embodiment of the present application, the second groove 1112 in the wavelength conversion layer 111 can be used to divide the pixel units without setting up additional optical components, which is beneficial to reducing the number of optical components in the light-emitting device 10, reducing the overall complexity of the light-emitting device 10, and simplifying the structure of the light-emitting device 10.

[0070] In some embodiments, continue to refer to Figure 2, the light emitting device 10 may further include: a first reflective layer 131; the first reflective layer 131 is located on a side surface of the second groove 1112 facing the first groove 1111. The side surface of the second groove 1112 facing the first groove 1111 is also the side surface of the second groove 1112 facing the inside thereof, that is, the side wall of the second groove 1112. In the embodiment of the present application, the first reflective layer 131 is disposed on the side wall of the second groove 1112, and the first reflective layer 131 is used to reflect the light irradiated to the side wall of the second groove 1112, which is equivalent to improving the reflectivity of the wavelength conversion layer 111 on the side wall of the second groove 1112, which is beneficial to improving the light extraction efficiency.

[0071] Specifically, part of the light emitted from the wavelength conversion layer 111 at the position of the first groove 1111 is irradiated to the first reflective layer 131, and the first reflective layer 131 is configured to reflect the part of the light, and at least part of the light after being reflected is emitted from the light-emitting side 111A of the wavelength conversion layer 111 to provide light extraction efficiency. In this embodiment, part of the light emitted from the wavelength conversion layer 111 can be directly emitted from the light-emitting side 111A of the wavelength conversion layer 111, and another part can be irradiated to the first reflective layer 131. The part of the light irradiated to the first reflective layer 131 can be reflected by the first reflective layer 131, and at least part of the reflected light can be emitted from the light-emitting side 111A of the wavelength conversion layer 111, thereby increasing the total amount of light emitted from the light-emitting side 111A, thereby improving the light extraction efficiency.

[0072] The first reflective layer 131 has a higher reflectivity than the wavelength conversion layer 111 ; illustratively, the first reflective layer 131 may be a metal reflective layer.

[0073] Among them, in the structure where the first reflective layer 131 is not set, the light emitted from the wavelength conversion layer 111 and irradiated to the side wall of the second groove 1112 cannot be emitted from the light-emitting side 111A of the wavelength conversion layer 111; or because the reflectivity of the wavelength conversion layer 111 is relatively low, the light irradiated to the side wall of the second groove 1112 is reflected by the side wall of the second groove 1112 and can be emitted from the light-emitting side 111A of the wavelength conversion layer 111.

[0074] In the light-emitting device 10 provided in the embodiment of the present application, the side wall of the second groove 1112 is arranged to cover the first reflective layer 131. By utilizing the relatively high reflectivity of the first reflective layer 131, more light emitted from the wavelength conversion layer 111 and irradiated to the first reflective layer 131 can be reflected to the light-emitting side 111A of the wavelength conversion layer 111 and emitted, thereby increasing the light output of the wavelength conversion layer 111 and improving the overall light output efficiency of the light-emitting device 10.

[0075] In some embodiments, Figure 3FIG. 2 shows a schematic diagram of the structure of another light emitting device provided in an embodiment of the present application. Figure 2 Based on Figure 3 The light emitting device 10 may further include: a second reflective layer 132; the second reflective layer 132 is located on the backlight side 111B of the wavelength conversion layer 111, and is located between the first groove 1111 and the second groove 1112; wherein the backlight side 111B and the light emitting side 111A are opposite sides of the wavelength conversion layer 111; illustratively, the backlight side 111B is the side of the wavelength conversion layer 111 facing the driving substrate 121, and the light emitting side 111A is the side of the wavelength conversion layer away from the driving substrate 121 side; wherein the second reflective layer 132 is configured to reflect the light emitted away from the light emitting side 111A to the light emitting side 111A. Specifically, among the light emitted by the wavelength conversion layer 111, there is also a part of the light emitted away from the light emitting side 111A. This part of the light is irradiated to the second reflective layer 132. The second reflective layer 132 is configured to reflect this part of the light, and at least part of the light after reflection is emitted from the light emitting side 111A of the wavelength conversion layer 111, thereby improving the light extraction efficiency.

[0076] The second reflective layer 132 may at least partially cover the surface of the backlight side 111B of the wavelength conversion layer 111 where the first groove 1111 is not provided. Figure 3 As shown, the second reflective layer 132 may completely cover the surface of the backlight side 111B of the wavelength conversion layer 111 where the first groove 1111 is not provided.

[0077] Among them, the light emitted from the wavelength conversion layer 111 away from the light emitting side 111A may be the light emitted from the wavelength conversion layer 111 and irradiated to the backlight side 111B. Since the backlight side 111B is not an effective light emitting side, it is necessary to adjust the direction of this part of the light so that this part of the light can be effectively used. Specifically, in the embodiment of the present application, by providing the second reflection layer 132, the second reflection layer 132 can be used to reflect the light emitted away from the light emitting side 111A, for example, it can be directly reflected to the light emitting side 111A of the wavelength conversion layer 111, or combined with the first reflection layer 131 to indirectly reflect to the light emitting side 111A of the wavelength conversion layer 111, so that this part of the light can be emitted from the light emitting side 111A of the wavelength conversion layer 111 after reflection, thereby increasing the light output of the wavelength conversion layer 111 and improving the overall light output efficiency of the light emitting device 10.

[0078] The second reflective layer 132 has a higher reflectivity than the LED substrate 12 ; illustratively, the second reflective layer 132 may be a metal reflective layer.

[0079] For example, Figure 3Taking the shown orientation as an example, each light-emitting unit may include an LED chip 122, a wavelength conversion layer 111 at a first groove 1111 aligned with the LED chip 122, a first reflective layer 131 surrounding the side wall of a second groove 1112 of the first groove 1111, and a second reflective layer 132 located at the first groove 1111 and on the backlight side 111B of the wavelength conversion layer 111; wherein the first reflective layer 131 and the second reflective layer 132 may jointly form a reflective structure surrounding the wavelength conversion layer 111 and the top of the LED chip 122 in the light-emitting unit, and the reflective structure may directly or indirectly reflect light that is not directly emitted from the light-emitting side 111A of the wavelength conversion layer 111, so that as much light as possible is emitted from the light-emitting side 111A, thereby increasing the light output of the wavelength conversion layer 111 and improving the light output efficiency of the light-emitting device 10.

[0080] At the same time, by setting the first reflective layer 131 to reflect light, it is also possible to prevent light between the light-emitting units from being transmitted to each other, which can improve or even avoid the crosstalk problem between adjacent light-emitting units, and is conducive to achieving precise control of lighting or display needs and improving lighting and display effects.

[0081] In some embodiments, Figure 4 FIG. 2 shows a schematic diagram of the structure of another light emitting device provided in an embodiment of the present application. Figure 2 or Figure 3 Based on Figure 4 The light emitting device 10 may further include: a packaging glue 140; the packaging glue 140 is filled at least in the second groove 1112 and is located on a side of the first reflective layer 131 away from the wavelength conversion layer 111; the packaging glue 140 is configured to fill the gap in the wavelength conversion layer 111. Optionally, the packaging glue 140 also fills the gap of the second reflective layer 132 corresponding to the second groove 1112, so as to further improve the overall structural stability of the light emitting device 10.

[0082] The packaging glue 140 is filled in the second groove 1112. On the one hand, it fills the gap in the wavelength conversion layer 111. Since the smaller the gap, the higher the stability, the overall structural stability of the wavelength conversion layer 111 and the light-emitting device 10 can be improved, which is beneficial to extending the service life of the light-emitting device 10. On the other hand, the packaging glue 140 can absorb and / or reflect light, thereby preventing the mutual transmission of light between adjacent light-emitting units, and can improve or even avoid the problem of light crosstalk between adjacent light-emitting units, which is beneficial to achieve precise regulation for lighting or display needs and improve lighting and display effects.

[0083] Exemplarily, the encapsulant 140 may be a light-absorbing structure, such as a structure formed based on a black material or a dark material; the encapsulant 140 may form a black matrix between adjacent light-emitting units.

[0084] It is understandable that Figure 4 exemplarily shows that the light emitting device 10 includes a first reflective layer 131, a second reflective layer 132 and a packaging glue 140. In other embodiments, the light emitting device 10 may also include at least one of the first reflective layer 131, the second reflective layer 132 and the packaging glue 140, which is not limited here.

[0085] In the above embodiment, the first groove 1111 and / or the second groove 1112 may be a groove with an opening size equal to or larger than the bottom size, and the opening is located on the side surface of the wavelength conversion layer 111 facing the LED substrate 12, and the bottom is located on the side of the opening away from the LED substrate 12, and may be located on the surface of the light emitting side, or may be located inside the wavelength conversion layer 111. Herein, the size may be understood as each unidirectional width within the plane where the wavelength conversion layer is located, and the inside of the wavelength conversion layer 111 may be understood as within the outermost contour line. Such a configuration, on the one hand, is conducive to reducing the difficulty of the process and improving the yield rate; on the other hand, it is conducive to the precise alignment between the LED substrate 12 and the wavelength conversion layer 111, thereby improving the packaging accuracy. The following is combined with Figure 5-Figure 10 This is explained by way of example.

[0086] In some embodiments, Figure 5 A partial enlarged structural schematic diagram of the light emitting device provided in an embodiment of the present application is shown, specifically showing a structure of a single light emitting unit; wherein the wavelength conversion layer 111 includes a first groove 1111. Figure 1-Figure 4 Based on any of the diagrams, refer to Figure 5 In the light-emitting device 10, the first groove 1111 includes an opening 11A, a side surface 11B and a bottom surface 11C; the opening 11A is located on the side of the wavelength conversion layer 111 facing the LED chip 122, and the side surface 11B is connected between the bottom surface 11C and the opening 11A; the vertical projection of the opening 11A on the plane where the bottom surface 11C is located covers the bottom surface 11C.

[0087] The first groove 1111 is surrounded by the opening 11A, the side surface 11B and the bottom surface 11C, and the opening 11A is located on the backlight side 111B of the wavelength conversion layer 111, that is, facing the LED chip 122, and the bottom surface 11C is located on a surface that is recessed from the plane where the opening 11A is located toward the inside of the wavelength conversion layer 111, and the side surface 11B is connected between the bottom surface 11C and the opening 11A, thereby forming the first groove 1111.

[0088] For example, in Figure 5 In the structure shown, the planar shape of the first groove 1111 may be a trapezoid; corresponding to the three-dimensional structure of the light emitting device 10, the first groove 1111 may be a tripod shape, a truncated cone shape, or a cone shape with a polygonal bottom surface, which is not limited here.

[0089] The plane where the bottom surface 11C is located is also the plane where the wavelength conversion layer 111 is located, and is a plane perpendicular to the thickness direction Z of the wavelength conversion layer 111. Figure 6-Figure 8 The plane defined by the first direction X and the second direction Y is shown in FIG.

[0090] For example, Figure 6 FIG. 1 shows a schematic diagram of a projection structure of a light emitting device provided in an embodiment of the present application, showing a relative position and size relationship between the opening 11A and the bottom surface 11C. Figure 6 As shown, in the plane where the bottom surface 11C is located, the vertical projection of the opening 11A completely covers the bottom surface 11C, and each side of the vertical projection of the opening 11A is outside the corresponding side of the bottom surface 11C, and the size of the vertical projection of the opening 11A is larger than the size of the bottom surface 11C.

[0091] For example, Figure 7 FIG. 1 shows another schematic diagram of a projection structure of a light emitting device provided in an embodiment of the present application, showing another relative position and size relationship between the opening 11A and the bottom surface 11C. Figure 7 As shown, in the plane where the bottom surface 11C is located, the vertical projection of the opening 11A completely covers the bottom surface 11C, and the three sides of the vertical projection of the opening 11A are all outside the corresponding sides of the bottom surface 11C, one side coincides with the corresponding side of the bottom surface 11C, and the size of the vertical projection of the opening 11A is larger than the size of the bottom surface 11C.

[0092] For example, Figure 8 FIG. 1 shows another schematic diagram of a projection structure of a light emitting device provided in an embodiment of the present application, showing another relative position and size relationship between the opening 11A and the bottom surface 11C. Figure 8 As shown, in the plane where the bottom surface 11C is located, the vertical projection of the opening 11A completely covers the bottom surface 11C, and the two opposite sides of the vertical projection of the opening 11A are both outside the corresponding sides of the bottom surface 11C. In addition, the two opposite sides coincide with the corresponding sides of the bottom surface 11C, and the size of the vertical projection of the opening 11A is larger than the size of the bottom surface 11C.

[0093] Above Figure 6-Figure 8 In the figures, the opening 11A and the bottom surface 11C are shown as quadrilaterals as examples; in other embodiments, the opening 11A and the bottom surface 11C may also be circular, elliptical or other polygonal shapes, which are not limited here.

[0094] In addition, the above Figure 6-Figure 8In the figure, it is exemplified that the area of ​​the opening 11A is larger than the area of ​​the bottom surface 11C, and the unidirectional width of the opening 11A is larger than or equal to the unidirectional width of the bottom surface 11C; in other embodiments, the area of ​​the opening 11A may also be equal to the area of ​​the bottom surface 11C, the width of the opening 11A in each direction may be equal to the width of the bottom surface 11C in the corresponding direction, and the vertical projection of the opening 11A on the plane where the bottom surface 11C is located overlaps with the bottom surface 11C, which is not limited here.

[0095] In the embodiment of the present application, the vertical projection of the opening 11A on the plane where the bottom surface 11C is located covers the bottom surface 11C, that is, the opening is larger and the bottom surface is smaller. This makes it easier for the LED substrate 12 to be aligned and integrated with the wavelength conversion layer 111. Under the premise that the LED chip 122 is roughly aligned with the first groove 1111, the LED chip 122 can automatically fall into the first groove 1111 under the action of gravity or pressure, so that the LED substrate 12 and the wavelength conversion layer 111 can be automatically and accurately aligned, which can improve the alignment accuracy of the integrated package.

[0096] In some embodiments, continue to refer to Figure 5 In the first groove 1111 of the light emitting device 10, the side surface 11B is a smooth side surface.

[0097] The smooth side surface makes the LED chip 122 less susceptible to resistance when moving from the opening 11A to the bottom surface 11C, and the sinking process is smoother. Figure 5 Taking the light emitting device 10 shown as an example, the side edge of the smooth side surface may be a straight line; in other embodiments, the side edge of the smooth side surface may also be an arc line or other shapes, which are not limited here.

[0098] In the light-emitting device 10 provided in the embodiment of the present application, by setting the side 11B of the first groove 1111 as a smooth side, the LED chip 122 can slide freely and quickly to the bottom of the first groove 1111 after being roughly aligned with the first groove 1111, which is conducive to convenient positioning packaging and reduces the difficulty of positioning packaging.

[0099] In some embodiments, continue to refer to Figure 5 In the first groove 1111 , the angle between the side surface 11B and the bottom surface 11C is θ1; wherein the value of θ1 satisfies 90°≤θ1≤170°.

[0100] The position of the side surface 11B may refer to the position of any side edge of the side surface 11B, which is located in any plane perpendicular to the bottom surface 11C; Figure 5As shown, the angle between the side and the bottom surface 11C is θ1, and 90°≤θ1≤170°. In this way, the inner angle of the bottom surface of the first groove 1111 is a right angle or an obtuse angle, thereby forming a tripod-shaped structure with a larger opening. Optionally, the size of the bottom surface 11C is equivalent to the size of the LED chip 122. As a result, when the LED substrate 12 and the wavelength conversion layer 111 are integrated and packaged, if the LED chip 122 is offset, for example, the LED chip 122 is pressed against the side surface 11B of the first groove 1111, the LED chip 122 and the first groove 1111 can be automatically aligned and sunken to the bottom surface 11C under the action of gravity or pressure, so that the LED substrate 12 and the wavelength conversion layer 111 can be automatically aligned, which is beneficial to improve the accuracy and speed of integrated packaging.

[0101] Exemplarily, the value of θ1 may be 90°, 170°, 100°, 125°, 150°, 165° to 170°, 98° to 118°, or other angle values ​​or angle ranges, which are not limited here.

[0102] In some embodiments, Fig. 9 Another partially enlarged structural schematic diagram of the light emitting device provided in the embodiment of the present application is shown, specifically showing another structure of a single light emitting unit; wherein the wavelength conversion layer 111 includes a first groove 1111 and a second groove 1112. Figure 2-Figure 4 Based on any of the diagrams, refer to Fig. 9 In the light emitting device 10, the angle between the side surface of the second groove 1112 and the surface where the light emitting side 111A of the wavelength conversion layer 111 is located is θ2; wherein the value of θ2 satisfies 45°≤θ2≤90°.

[0103] The position of the side surface of the second groove 1112 can refer to the position of any side edge of the side surface, which is located in any plane perpendicular to the surface where the light emitting side 111A of the wavelength conversion layer 111 is located; Fig. 9 As shown, the angle between the side and the surface of the light-emitting side 111A of the wavelength conversion layer 111 is θ2, and 45°≤θ2≤90°. In this way, the outer angle of the bottom surface of the second groove 1112 on the light-emitting side 111A is a right angle or an obtuse angle, so that the inner angle of the bottom surface of the second groove 1112 on the light-emitting side 111A is a right angle or an obtuse angle, and the second groove 1112 as a whole is also a groove with a larger opening, which reduces the difficulty of forming the second groove 1112. At the same time, a reflective layer, such as the first reflective layer 131 mentioned above, can be formed on the side of the second groove 1112, so that a part of the light that cannot be directly emitted can be emitted from the light-emitting side 111A after being reflected by the reflective layer, so that more light can be emitted from the light-emitting side 111A of the wavelength conversion layer 111, thereby improving the light extraction efficiency.

[0104] For example, the cross-sectional shape of the second groove 1112 may be a trapezoid, such as Fig. 9 As shown; correspondingly, the three-dimensional shape of the second groove 1112 can be a trapezoid; in other embodiments, the cross-sectional shape of the second groove 1112 can also be a triangle or other shapes, which are not limited here.

[0105] For example, Fig.10 A schematic diagram of the structure of a wavelength conversion layer of a light-emitting device provided in an embodiment of the present application is shown, which can be understood as Fig. 9 The wavelength conversion layer shown in FIG. is on the side facing the LED substrate. Fig. 9 and Fig.10 , the wavelength conversion layer 111 includes a first groove 1111 and a second groove 1112, and the second groove 1112 penetrates the wavelength conversion layer 111 in the thickness direction Z of the wavelength conversion layer 111 to divide different light-emitting units; the first groove 1111 may be a groove that does not penetrate the wavelength conversion layer 111 and is formed by the wavelength conversion layer 111 being recessed on the surface of the LED substrate 12 toward its opposite surface (i.e., the surface where the light-emitting side 111A is located). In the first direction X, the width of the bottom surface 11C of the first groove 1111 may be a first width W1, the width of the opening 11A of the first groove 1111 may be a second width W2, and the spacing between adjacent second grooves 1112 may be a third width W3.

[0106] Among them, the first width W1 is slightly larger than the width of the LED chip 122 in the first direction X, the size of the bottom surface 11C is slightly larger than the size of the LED chip 122, the second width W2 is larger than the first width W1, and 90°≤θ1≤170°, so that when the LED substrate 12 and the wavelength conversion layer 111 are integrated and packaged, if the LED chip 122 is offset, for example, the LED chip 122 is pressed on the side 11B of the first groove 1111, the LED chip 122 and the first groove 1111 can be automatically aligned and sunken to the bottom surface 11C under the action of gravity or pressure, so that the LED substrate 12 and the wavelength conversion layer 111 can be automatically aligned, which is beneficial to improve the accuracy and speed of integrated packaging.

[0107] It should be noted that Fig.10 It is only exemplarily shown that the second groove 1112 surrounds the first groove 1111; in other embodiments, the second groove 1112 may also extend along the first direction X and / or the second direction Y to achieve the division and definition of the light-emitting unit, which is not limited here.

[0108] In some embodiments, Fig.11 FIG. 2 shows a schematic diagram of the structure of another light emitting device provided in an embodiment of the present application. Figure 1-Figure 4 Based on any of the diagrams, refer to Fig.11In the light-emitting device 10, the LED substrate 12 may further include: a packaging structure 123; the packaging structure 123 is located on the side of the driving substrate 121 connected to the LED chip 122, and is filled between the driving substrate 121 and the wavelength conversion layer 111, and is used to encapsulate the electrical connection structure between the LED chip 122 and the driving substrate 121, and is beneficial to improving the overall structure and performance stability of the LED substrate 12 and the light-emitting device 10.

[0109] The packaging structure 123 is filled between the driving substrate 121 and the wavelength conversion layer 111. Exemplarily, when the second reflective layer 132 is further provided on the side of the wavelength conversion layer 111 facing the LED substrate 12, the packaging structure 123 is specifically located between the second reflective layer 132 and the driving substrate 121 to reduce the gap in the light-emitting device 10, enhance the overall structure and performance stability of the light-emitting device 10, and extend its service life.

[0110] Exemplarily, the packaging structure 123 may be white packaging glue, which may be formed after the driving substrate 121 is connected to the LED chip 122. When the LED substrate 12 and the wavelength conversion layer 111 are integrated and packaged, the packaging structure 123 abuts against the wavelength conversion layer 111 (or the second reflective layer 132) to achieve support; or a small gap is reserved between the packaging structure 123 and the wavelength conversion layer 111 (or the second reflective layer 132), so that the light-emitting device 10 can be applied to different application scenarios, and the structural size changes caused by changes such as thermal shock and cold shrinkage are redundancy, ensuring that the overall stability of the device is good and the applicability is strong.

[0111] In some embodiments, continue to refer to Fig.11 In the light-emitting device 10, the LED substrate 12 may further include: a shading structure 124; the shading structure 124 is arranged in the packaging structure 123 and is located between adjacent LED chips 122; the shading structure 124 is configured to absorb and / or reflect light irradiated onto the shading structure 124.

[0112] The light shielding structure 124 can block the light emitted by the LED chip 122 from irradiating the adjacent LED chip 122, thereby avoiding light crosstalk.

[0113] Exemplarily, the shading structure 124 is connected to the packaging glue 140 to jointly form a light blocking structure between adjacent light-emitting units to avoid light crosstalk between adjacent light-emitting units, thereby facilitating precise control of each light-emitting unit under different light types to meet lighting and / or display requirements.

[0114] Exemplarily, the light shielding structure 124 may be a black packaging glue, and the light shielding structure 124 may also be filled together with the packaging structure 123 between the driving substrate 121 and the wavelength conversion layer 111 to enhance the overall structural stability of the light emitting device 10 .

[0115] In some embodiments, Fig.12 FIG. 2 shows a schematic diagram of the structure of another light emitting device provided in an embodiment of the present application. Figure 1-Figure 4 as well as Fig.11 Based on any of the diagrams, refer to Fig.12 The light emitting device 10 may further include: a base substrate 110 located on a side of the wavelength conversion layer 111 away from the LED substrate 12 .

[0116] The base substrate 110 can be used as a protective cover to protect the wavelength conversion layer 111 and the LED substrate 12 , thereby improving overall stability and extending service life.

[0117] In some embodiments, the transmittance of the base substrate 110 to light having a target wavelength is equal to or greater than a preset transmittance threshold. The target wavelength light is light emitted directly from the wavelength conversion layer 111 or emitted after being reflected by the reflective layer. By setting the transmittance of the base substrate 110 to the light to be equal to or greater than the preset transmittance threshold, more light can be transmitted, which is beneficial to improving the light extraction efficiency. Exemplarily, the preset transmittance threshold may be 60%, 70%, 85%, 99% or other transmittance thresholds, which are not limited here.

[0118] In other embodiments, the base substrate 110 also has an anti-reflection effect for light with a target wavelength to further improve light extraction efficiency.

[0119] In the embodiment of the present application, the base substrate 110 and the wavelength conversion layer 111 can be integrated into a wavelength conversion substrate 11 , and the integrated package between the wavelength conversion layer 111 and the LED substrate 12 can also be an integrated package between the wavelength conversion substrate 11 and the LED substrate 12 .

[0120] Based on the same inventive concept, an embodiment of the present application also provides a method for preparing a light-emitting device, which is used to form any of the light-emitting devices provided in the above embodiments, and can achieve corresponding beneficial effects. The similarities can be understood by referring to the explanation of the light-emitting device above, and will not be repeated here.

[0121] For example, Fig.13 The schematic diagram of the process of preparing a light emitting device provided in an embodiment of the present application is shown. Fig.13 The preparation method of the light emitting device may include the following steps:

[0122] S210, providing a wavelength conversion layer and an LED substrate.

[0123] A substrate may be integrated on one side of the wavelength conversion layer, and the substrate and the wavelength conversion layer may together constitute a wavelength conversion substrate. The LED substrate includes a driving substrate and an LED chip integrated with the driving substrate.

[0124] For example, Fig.14 FIG. 1 shows a schematic diagram of the structure of a wavelength conversion substrate provided in an embodiment of the present application. Fig.14 As shown, the wavelength conversion substrate 11 includes a base substrate 110 and a wavelength conversion layer 111 integrated on one side of the base substrate 110. Exemplarily, when the wavelength conversion layer 111 is a fluorescent sheet made of glass or ceramic, the integration of the wavelength conversion layer 111 and the base substrate 110 may include adhering the wavelength conversion layer 111 to one side of the base substrate 110; when the wavelength conversion layer 111 is other film-forming materials, the integration of the wavelength conversion layer 111 and the base substrate 110 may include directly forming a film on one side of the base substrate 110 to form a fluorescent layer.

[0125] For example, Fig.15 FIG. 1 shows a schematic diagram of the structure of an LED substrate provided in an embodiment of the present application. Fig.15 As shown, the LED substrate 12 includes a driving substrate 121 and an LED chip 122 electrically connected to the driving substrate 121. For example, the LED chip 122 can be electrically connected to one side of the driving substrate 121 by means of crimping, welding, etc. Herein, the LED chip 122 can be a bare chip that is not individually packaged. The LED chip 122 can be connected to the driving substrate 121 and integrated and packaged as a whole.

[0126] S220, forming at least a first groove on a side of the wavelength conversion layer facing away from the base substrate.

[0127] The first groove is used to position and accommodate the LED chip.

[0128] For example, Fig.16 Shows Fig.13 The structure diagram of the wavelength conversion layer in S220 of the preparation method is shown. Fig.16 As shown, a first groove 1111 is formed on the side of the wavelength conversion layer 111 away from the base substrate 110; the bottom size of the first groove 1111 is slightly larger than the size of the LED chip 122, so as to accommodate the LED chip 122 in position and improve the packaging speed and accuracy.

[0129] S230 , based on the alignment relationship between the first groove and the LED chip, align and integrate the LED substrate and the wavelength conversion layer.

[0130] The LED chip and the first groove may correspond to each other one by one; at least part of the LED chip is accommodated in the first groove, and the wavelength conversion layer is configured to emit light with a target wavelength based on the excitation of the LED chip, thereby forming a light-emitting device.

[0131] For example, Fig.17 Shows Fig.13 The structure diagram of the light emitting device in step S230 of the preparation method is shown. Fig.17 As shown, the LED substrate 12 and the wavelength conversion substrate 11 are aligned and integrated for packaging, the LED chip 122 is aligned with the first groove 1111 , and the LED chip 122 is sunken into the first groove 1111 .

[0132] The packaging method of the light-emitting device provided in the embodiment of the present application realizes the integrated packaging of multiple LED chips 122 by arranging multiple LED chips 122 electrically connected to the driving substrate 121 and integrated with the wavelength conversion substrate 11, thereby improving the packaging efficiency; at the same time, the spacing between adjacent LED chips is reduced, and the spacing between corresponding light-emitting units is reduced, thereby improving the packaging density and reducing the dark area of ​​lighting; in addition, the first groove 1111 is used to limit the LED chip 122, thereby improving the accuracy of the integrated packaging and improving the overall structural stability of the light-emitting device 10.

[0133] In some embodiments, Figure 5 or Fig. 9 As shown, the first groove 1111 is a tripod-shaped structure, so that when the LED substrate 12 and the wavelength conversion substrate 11 are integrated and packaged, if the LED chip 122 is offset, for example, the LED chip 122 is pressed against the side surface 11B of the first groove 1111, the LED chip 122 and the first groove 1111 can be automatically aligned and sunken to the bottom surface 11C under the action of gravity or pressure, so that the LED substrate 12 and the wavelength conversion substrate 11 can be automatically aligned, which is beneficial to improve the accuracy and speed of integrated packaging.

[0134] In some embodiments, before aligning and integrating the LED substrate with the wavelength conversion substrate, the method may further include:

[0135] A second groove is formed on a side of the wavelength conversion layer away from the base substrate; wherein the second groove is arranged between adjacent first grooves and penetrates the wavelength conversion layer in a thickness direction of the wavelength conversion layer.

[0136] Specifically, the second groove is used to separate adjacent light emitting units.

[0137] In some embodiments, the second groove is a trapezoidal groove, and 45°≤θ2≤90°, so that more light can be emitted from the light-emitting side of the wavelength conversion layer, thereby improving the light-emitting efficiency of the light-emitting device.

[0138] In some embodiments, after forming the second groove, the method may further include:

[0139] A first reflective layer is formed in the second groove; the first reflective layer is located on a surface of the second groove facing the first groove; the first reflective layer is configured to reflect the light emitted from the wavelength conversion layer at the position of the first groove and irradiated to the first reflective layer to the light-emitting side of the wavelength conversion layer; or,

[0140] A reflective layer is formed on the side of the wavelength conversion layer facing away from the substrate; the reflective layer includes a first reflective layer and a second reflective layer; the first reflective layer is located on a surface of the second groove facing the first groove; the first reflective layer is configured to reflect the light emitted from the wavelength conversion layer at the position of the first groove and irradiated to the first reflective layer to the light output side of the wavelength conversion layer; the second reflective layer is located between the first groove and the second groove.

[0141] Specifically, a reflective layer, i.e., a first reflective layer, may be formed at least on the side of the second groove; a reflective layer, i.e., a second reflective layer, may also be formed on the surface of the wavelength conversion layer between the first groove and the second groove; the reflective layer may be used to reflect light that is not directly emitted from the light-emitting side of the wavelength conversion layer, so that at least part of the reflected light can be emitted from the light-emitting side of the wavelength conversion layer, thereby improving the light extraction efficiency.

[0142] In some embodiments, the method for preparing a light emitting device, after forming the second groove or after forming the first reflective layer in the second groove, further includes:

[0143] Filling the second groove with packaging glue; the packaging glue is located on a side of the first reflective layer away from the wavelength conversion layer;

[0144] The encapsulant is configured to fill gaps within the wavelength conversion layer.

[0145] Specifically, the second groove is filled with packaging glue to prevent light from crosstalking to adjacent light-emitting units.

[0146] In some embodiments, Fig.18 The flowchart of another method for preparing a light emitting device provided in an embodiment of the present application is shown. Fig.18 The preparation method of the light emitting device may include the following steps:

[0147] S310 , integrating a wavelength conversion layer with a substrate.

[0148] Specifically, this step may include: providing a base substrate; integrating a wavelength conversion layer on one side of the base substrate. For example, when the wavelength conversion layer is a wavelength conversion layer made of glass or ceramic, the wavelength conversion layer may be bonded to the base substrate; or, when the wavelength conversion layer is a fluorescent layer formed based on a fluid material, a film may be formed on one side of the base substrate to form a fluorescent layer integrated with the base substrate.

[0149] S320, forming a first groove and a second groove on a side of the wavelength conversion layer away from the base substrate.

[0150] In this step, the first groove and the second groove may be formed by mask etching, laser etching or the like.

[0151] Specifically, the first groove and the second groove can be formed in the same process step based on the grayscale mask method; that is, in the same step, the first groove and the second groove of different depths are formed simultaneously. This arrangement can reduce the process steps and save the total process time.

[0152] Alternatively, the first groove and the second groove can be formed in two process steps, and the first groove can be formed first (see Fig.16 ), and then form a second groove (refer to Fig.19 ); the second groove may be formed first, and then the first groove is formed, which is not limited here. In this way, the first groove and the second groove with different depths can be formed in different process steps, and only grooves with the same depth are formed in the same process step, which is conducive to reducing the process difficulty and improving the product yield.

[0153] S330, forming a patterned reflective layer on a side of the wavelength conversion layer facing away from the substrate.

[0154] Specifically, the patterned reflective layer may be directly formed by mask deposition; or the patterned reflective layer may be formed by first depositing and then etching.

[0155] In some embodiments, a reflective layer, ie, a first reflective layer, may be formed on a side of the second groove.

[0156] For example, Fig. 20 FIG. 2 shows a schematic diagram of the structure of another wavelength conversion substrate provided in an embodiment of the present application. Fig. 20 As shown, in the wavelength conversion substrate 11 , the patterned reflective layer includes a first reflective layer 131 deposited on the side of the second groove 1112 .

[0157] For example, Fig.21 FIG. 2 shows a schematic diagram of the structure of another light emitting device provided in an embodiment of the present application. Fig.21 As shown, corresponding to Fig. 20The wavelength conversion substrate shown, the light-emitting device 10 may include a wavelength conversion substrate 11 and an LED substrate 12; wherein, the wavelength conversion substrate 11 includes a base substrate 110 and a wavelength conversion layer 111, the wavelength conversion layer 111 includes a first groove 1111 and a second groove 1112 on the side away from the base substrate 110, and a first reflective layer 131 is arranged on the side of the second groove 1112; the LED substrate 12 includes a driving substrate 121 and an LED chip 122 electrically connected to the driving substrate 121; the LED chip is arranged in alignment with the first groove 1111, and the second groove 1112 is used to space different light-emitting units; the first reflective layer 131 is used to reflect the light irradiated thereon to improve the light extraction efficiency.

[0158] In some embodiments, a reflective layer, that is, a first reflective layer and a second reflective layer, may be formed on the side surface of the second groove and the backlight side surface of the fluorescent surface between the second groove and the first groove.

[0159] For example, Fig. 22 FIG. 2 shows a schematic diagram of the structure of another wavelength conversion substrate provided in an embodiment of the present application. Fig. 22 As shown, in the wavelength conversion substrate 11 , the patterned reflective layer includes a first reflective layer 131 deposited on the side of the second groove 1112 and a second reflective layer 132 deposited between the first groove 1111 and the second groove 1112 .

[0160] For example, Fig.23 FIG. 2 shows a schematic diagram of the structure of another light emitting device provided in an embodiment of the present application. Fig.23 As shown, corresponding to Fig. 22 The wavelength conversion substrate shown, the light-emitting device 10 may include a wavelength conversion substrate 11 and an LED substrate 12; wherein the wavelength conversion substrate 11 includes a base substrate 110 and a wavelength conversion layer 111, the wavelength conversion layer 111 includes a first groove 1111 and a second groove 1112 on the side away from the base substrate 110, and a first reflective layer 131 is arranged on the side of the second groove 1112, and a second reflective layer 132 is arranged between the first groove 1111 and the second groove 1112; the LED substrate 12 includes a driving substrate 121 and an LED chip 122 electrically connected to the driving substrate 121; the LED chip is arranged in alignment with the first groove 1111, and the second groove 1112 is used to space different light-emitting units; the first reflective layer 131 and the second reflective layer 132 are used to reflect the light irradiated thereon to improve the light extraction efficiency.

[0161] S340 , filling the second groove with packaging glue.

[0162] Specifically, the patterned encapsulation glue can be directly formed by mask deposition, for example, other positions except the second groove can be masked so that the encapsulation glue is only filled in the second groove. Alternatively, the encapsulation glue filled in the second groove can be formed by first depositing and then etching.

[0163] For example, Fig.24 A schematic diagram of the structure of another wavelength conversion substrate provided by an embodiment of the present application is shown. As shown in 24, in the wavelength conversion substrate 11, a first groove 1111 and a second groove 1112 are formed on the side of the wavelength conversion layer 111 away from the base substrate 110, and the first reflective layer 131 is deposited on the side of the second groove 1112, and the second reflective layer 132 is deposited on the surface of the wavelength conversion layer 111 away from the base substrate 110 except the first groove 1111 and the second groove 1112; the encapsulation glue 140 is filled in the second groove 1112 and can be flush with the surface of the second reflective layer 132 away from the wavelength conversion layer 111.

[0164] For example, Fig.25 FIG. 2 shows a schematic diagram of the structure of another light emitting device provided in an embodiment of the present application. Fig.25 As shown, corresponding to Fig.24 The wavelength conversion substrate shown in the figure, the light-emitting device 10 may include a wavelength conversion substrate 11 and an LED substrate 12; wherein the wavelength conversion substrate 11 includes a base substrate 110 and a wavelength conversion layer 111, the wavelength conversion layer 111 includes a first groove 1111 and a second groove 1112 on a side away from the base substrate 110, and a first reflective layer 131 is arranged on the side of the second groove 1112, and a second reflective layer 132 is arranged between the first groove 1111 and the second groove 1112; in the second groove 1112, a packaging glue 140 is filled on a side of the first reflective layer 131 away from the wavelength conversion layer 111; the LED substrate 12 includes a driving substrate 121 and an LED chip 122 electrically connected to the driving substrate 121; the LED chip is arranged in alignment with the first groove 1111, and the second groove 1112 is used to space different light-emitting units; the packaging glue 140 is used to prevent light crosstalk; the first reflective layer 131 and the second reflective layer 132 are used to reflect the light irradiated thereon to improve the light extraction efficiency.

[0165] S350, aligning and integrating the LED substrate on the side of the wavelength conversion layer facing away from the base substrate.

[0166] For example, Fig.17 , Fig.21 , Fig.23 as well as Fig.25As shown, the LED substrate 12 is integrated and packaged with the wavelength conversion substrate 11. The alignment relationship between the first groove 1111 and the LED chip 122 is utilized to align the wavelength conversion substrate 11 with the LED substrate 12, which is beneficial to improve the packaging speed and accuracy.

[0167] In the embodiment of the present application, the LED chip 122 is connected to the driving substrate 121 and then integrated into the same wavelength conversion substrate 11. Compared with packaging a single wavelength conversion layer with the LED array pixels one by one, the packaging efficiency can be improved. At the same time, since the LED chips are collectively packaged based on bare chips instead of each chip being packaged independently, the spacing between LED chips can be reduced, the integration level can be improved, the integration efficiency can be faster, and the problem of dark areas in lighting can be improved.

[0168] On the basis of the above embodiments, the embodiment of the present application further provides a lighting device, which may include any of the light-emitting devices provided in the above embodiments, and can achieve corresponding beneficial effects. For example, the lighting device may be a smart headlight, an adaptive high beam headlight or other lighting fixture used in a vehicle. In other embodiments, the light-emitting device may also be used in a monochrome display device, which is not limited here.

[0169] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

[0170] For the convenience of explanation, the above description has been made in conjunction with specific embodiments. However, the above exemplary discussion is not intended to be exhaustive or limit the embodiments to the specific forms disclosed above. Based on the above teachings, various modifications and variations can be obtained. The selection and description of the above embodiments are to better explain the principles and practical applications, so that those skilled in the art can better use the embodiments and various different variations of the embodiments suitable for specific use considerations.

Claims

1. A light emitting device, characterized in that: include: Driver substrate; A plurality of LED chips, wherein the plurality of LED chips are arranged on one side of the driving substrate, and the LED chips are electrically connected to the driving substrate; A wavelength conversion layer, wherein the wavelength conversion layer is integrally provided, and the wavelength conversion layer comprises a plurality of first grooves arranged at intervals, wherein the first grooves are arranged in one-to-one correspondence with the LED chips, and at least a portion of the LED chips is accommodated in the first grooves; The first groove is configured to align the LED chip, and the wavelength conversion layer is configured to emit light with a target wavelength based on excitation of the LED chip.

2. The device according to claim 1, characterized in that A second groove is arranged between adjacent first grooves; The second groove is configured to divide different wavelength conversion units in the wavelength conversion layer; The second groove penetrates the wavelength conversion layer in a thickness direction of the wavelength conversion layer.

3. The device according to claim 2, characterized in that Also includes: A first reflective layer is located on a surface of the second groove facing the first groove; Part of the light emitted from the wavelength conversion layer at the position of the first groove is irradiated to the first reflective layer, and the first reflective layer is configured to reflect the light, and at least part of the reflected light is emitted from the light-emitting side of the wavelength conversion layer; The light-emitting side is a side of the wavelength conversion layer away from the driving substrate.

4. The device according to claim 2, characterized in that Also includes: A second reflective layer, located on the backlight side of the wavelength conversion layer and between the first groove and the second groove; Part of the light emitted from the wavelength conversion layer at the position of the first groove is irradiated to the second reflective layer, and the second reflective layer is configured to reflect the light, and at least part of the reflected light is emitted from the light-emitting side of the wavelength conversion layer; The backlight side is a side of the wavelength conversion layer facing the driving substrate, and the light-emitting side is a side of the wavelength conversion layer away from the driving substrate.

5. The device according to claim 3, characterized in that Also includes: A packaging glue is filled in at least the second groove and is located on a side of the first reflective layer away from the wavelength conversion layer; The encapsulant is configured to fill gaps within the wavelength conversion layer.

6. The device according to claim 2, characterized in that The angle between the side surface of the second groove and the surface of the wavelength conversion layer on which the light exiting side is located satisfies 45°≤θ2≤90°; Wherein, θ2 represents the angle between the side surface of the second groove and the surface of the wavelength conversion layer on which the light emitting side is located.

7. The device according to any one of claims 1 to 6, characterized in that: The first groove comprises an opening, a side surface and a bottom surface; The opening is located on a side of the wavelength conversion layer facing the LED chip, the side surface is connected between the bottom surface and the opening; and a vertical projection of the opening on a plane where the bottom surface is located covers the bottom surface.

8. The device according to claim 7, characterized in that The side surface is a smooth side surface; In the first groove, the angle between the side surface and the bottom surface satisfies 90°≤θ1≤170°; Wherein, θ1 represents the angle between the side surface and the bottom surface.

9. The device according to any one of claims 1 to 6, characterized in that: Also includes: A packaging structure, located on a side of the driving substrate connected to the LED chip, and filled between the driving substrate and the wavelength conversion layer; A shading structure is located between adjacent LED chips; the shading structure is configured to absorb and / or reflect light irradiated onto the shading structure; The substrate is located on a side of the wavelength conversion layer away from the LED chip; the transmittance of the substrate to the light with the target wavelength is equal to or greater than a preset transmittance threshold.

10. A method for preparing a light-emitting device, characterized in that: Used to form the device according to any one of claims 1 to 9; The method comprises: Providing a wavelength conversion layer and an LED substrate; the LED substrate includes a driving substrate and an LED chip electrically connected to the driving substrate; At least a first groove is formed on a side of the wavelength conversion layer away from the base substrate; the first groove is arranged in a one-to-one correspondence with the LED chip; Based on the alignment relationship between the first groove and the LED chip, the LED substrate and the wavelength conversion layer are aligned and integrated; The wavelength conversion layer is configured to emit light with a target wavelength based on excitation by the LED chip; at least a portion of the LED chip is accommodated in the first groove.

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