Radio frequency power amplifier, radio frequency front end module and electronic device

Abstract

The invention provides a radio frequency power amplifier, a radio frequency front-end module and an electronic device. The distance between a first part wire and a first radio frequency amplification chip is set to be smaller than the distance between a first input end of a primary coil and the first part wire; the distance between the first part of wiring and the first radio frequency amplification chip is smaller than the distance between the second input end of the primary coil and the first part of wiring, and the overall integration level of the radio frequency power amplifier is better guaranteed.

Description

Technical Field

[0001] The present application relates to the field of radio frequency technology, and in particular to a radio frequency power amplifier, a radio frequency front-end module and an electronic device. Background Art

[0002] With the continuous development of semiconductor technology, the requirements for the functions and performance of electronic devices are also increasing. For mobile devices, lightness or ease of carrying is a requirement that users pay more attention to. Therefore, the requirements for the integration of various modules in mobile devices are getting higher and higher. For example, for RF front-end modules, with the increasing popularity of the fifth generation mobile communication technology (5G), the frequency bands that communication equipment needs to support have increased a lot. However, the requirements based on integration have posed great challenges to the design of the RF front-end. Summary of the invention

[0003] The purpose of this application is to provide a radio frequency power amplifier, a radio frequency front-end module and an electronic device that can improve the overall integration.

[0004] In a first aspect of the present application, a radio frequency power amplifier is provided, comprising:

[0005] substrate;

[0006] A first radio frequency amplifier chip, disposed on the substrate, comprising a chip signal output terminal;

[0007] An output transformer, disposed on the substrate, comprising a primary coil and a secondary coil coupled to each other;

[0008] The primary coil comprises a first input terminal, a second input terminal and a primary signal wiring connecting the first input terminal and the second input terminal, and the chip signal output terminal is connected to the primary coil;

[0009] The primary signal routing includes a first portion of routing arranged adjacent to the first RF amplifier chip, and the first input end of the primary coil and the second input end of the primary coil are arranged away from the first RF amplifier chip relative to the first portion of routing.

[0010] Furthermore, the distance between the first portion of the routing and the first RF amplifier chip is smaller than the distance between the first input end of the primary coil and the first portion of the routing, and the distance between the first portion of the routing and the first RF amplifier chip is smaller than the distance between the second input end of the primary coil and the first portion of the routing.

[0011] Furthermore, the radio frequency power amplifier further comprises:

[0012] A passive unit network is connected between the chip signal output terminal and the primary coil of the output transformer, and at least one element in the passive unit network is arranged between the first input terminal and the first radio frequency amplifier chip.

[0013] Furthermore, the passive unit network includes a capacitor element and / or an inductor element, and the capacitor element and / or the inductor element is surrounded by the primary signal wiring.

[0014] Furthermore, the secondary coil includes a first output end and a second output end, and the first output end and the second output end are arranged away from the first radio frequency amplifier chip relative to the first portion of the wiring.

[0015] Further, the distance between the first input terminal and the first RF amplifier chip is smaller than the distance between the first output terminal or the second output terminal and the first RF amplifier chip, and / or the distance between the second input terminal and the first RF amplifier chip is smaller than the distance between the first output terminal or the second output terminal and the first RF amplifier chip.

[0016] Further, the distance between the first input terminal and the first RF amplifier chip is equal to the distance between the first output terminal or the second output terminal and the first RF amplifier chip, and / or the distance between the second input terminal and the first RF amplifier chip is equal to the distance between the first output terminal or the second output terminal and the first RF amplifier chip.

[0017] Furthermore, the passive unit network includes a third signal routing arranged in the substrate, the third signal routing includes a second portion of routing arranged in the first wiring layer of the substrate and a third portion of routing arranged in the second wiring layer of the substrate, and the second portion of routing and the third portion of routing overlap in the longitudinal projection.

[0018] In a second aspect of the present application, a radio frequency power amplifier is provided, comprising:

[0019] substrate;

[0020] A first radio frequency amplifier chip is disposed on the substrate and includes a first differential output terminal and a second differential output terminal;

[0021] An output transformer, disposed on the substrate, comprising a primary coil and a secondary coil coupled to each other;

[0022] The primary coil includes a first input terminal, a second input terminal, and a primary signal wiring connecting the first input terminal and the second input terminal, the first differential output terminal is connected to the first input terminal, and the second differential output terminal is connected to the second input terminal;

[0023] The primary signal routing includes a first portion of routing arranged adjacent to the first RF amplifier chip, and the first input end of the primary coil and the second input end of the primary coil are arranged away from the first RF amplifier chip relative to the first portion of routing.

[0024] Furthermore, the radio frequency power amplifier further comprises:

[0025] a first signal wiring, wherein one end of the first signal wiring is connected to the first differential output end, and the other end of the first signal wiring is connected to the first input end of the primary coil;

[0026] A second signal wiring, one end of the second signal wiring is connected to the second differential output end, and the other end of the first signal wiring is connected to the second input end of the primary coil.

[0027] Further, the first signal routing line is arranged in at least one wiring layer in the substrate, and the second signal routing line is arranged in at least one wiring layer in the substrate.

[0028] Furthermore, the first signal routing line overlaps with the first portion of routing lines in a longitudinal projection, and / or the second signal routing line overlaps with the first portion of routing lines in a longitudinal projection.

[0029] Furthermore, the radio frequency power amplifier further comprises:

[0030] A third signal trace disposed in the substrate, connected between the first input end of the primary coil and the second input end of the primary coil;

[0031] There is at least one first overlapping portion between the third signal routing and the first signal routing in a longitudinal projection, and / or there is at least one second overlapping portion between the third signal routing and the second signal routing in a longitudinal projection.

[0032] Furthermore, the third signal routing includes a second portion of routing arranged in the first wiring layer of the substrate and a third portion of routing arranged in the second wiring layer of the substrate, and the second portion of routing and the third portion of routing overlap in a longitudinal projection.

[0033] Furthermore, the RF power amplifier also includes a first capacitor arranged on the substrate, one end of the first capacitor is connected to the third signal trace, and the other end of the first capacitor is connected to the first input end of the primary coil or the second input end of the primary coil.

[0034] Furthermore, the first portion of routing includes a first sub-routing arranged in the first wiring layer of the substrate and a second sub-routing arranged in the third wiring layer of the substrate, and the first signal routing and the first sub-routing and the second sub-routing overlap in a longitudinal projection.

[0035] Furthermore, the first portion of routing includes a first sub-routing arranged in the first wiring layer of the substrate and a second sub-routing arranged in the third wiring layer of the substrate, the first sub-routing and the second sub-routing are connected through a first through hole, and the first through hole is located between the first signal routing and the second signal routing.

[0036] Furthermore, the secondary coil includes a first output end, a second output end, and a secondary signal line connecting the first output end and the second output end, and the primary signal line and the secondary signal line are arranged in the same wiring layer of the substrate.

[0037] Furthermore, the secondary coil includes a first output end, a second output end and a secondary signal trace connecting the first output end and the second output end, the substrate includes a first wiring layer, a second wiring layer and a third wiring layer arranged in sequence, the primary signal trace is arranged in the first wiring layer and the third wiring layer, the secondary signal trace is arranged in the second wiring layer, and the primary signal trace and the secondary signal trace are longitudinally coupled.

[0038] Furthermore, the inductance value of the first signal wiring is smaller than the inductance value of the primary signal wiring.

[0039] In a third aspect of the present application, a radio frequency front-end module is provided, comprising the above-mentioned radio frequency power amplifier.

[0040] In a third aspect of the present application, an electronic device is provided, comprising the above-mentioned RF front-end module.

[0041] In the RF power amplifier, RF front-end module and electronic device provided in the embodiments of the present application, by setting the distance between the first part of the wiring in the primary coil and the first RF amplifier chip to be smaller than the distance between the first input end of the primary coil and the first part of the wiring, and the distance between the first part of the wiring in the primary coil and the first RF amplifier chip to be smaller than the distance between the second input end of the primary coil and the first part of the wiring, the overall integration of the RF power amplifier is better guaranteed. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] Figure 1 is a schematic diagram of a radio frequency power amplifier provided in one embodiment of the present application;

[0043] Figure 2is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0044] Figure 3 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0045] Figure 4 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0046] Figure 5 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0047] Figure 6 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0048] Figure 7 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0049] Figure 8 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0050] Fig. 9 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0051] Fig.10 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0052] Fig.11 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0053] Fig.12 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0054] Fig.13 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0055] Fig.14 is another schematic diagram of a radio frequency power amplifier provided by an embodiment of the present application;

[0056] Fig.15 is a schematic diagram of a radio frequency front end provided by an embodiment of the present application;

[0057] Fig.16 It is a simulation schematic diagram of a radio frequency power amplifier provided in one embodiment of the present application. DETAILED DESCRIPTION

[0058] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0059] It should be understood that the present application can be implemented in different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, providing these embodiments will make the disclosure thorough and complete and fully convey the scope of the present application to those skilled in the art. In the accompanying drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity. The same reference numerals throughout represent the same elements.

[0060] It should be understood that when an element or layer is referred to as being "on, adjacent to, connected to, connected to, connected to, or coupled to other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. In contrast, when an element is referred to as being "directly on, directly adjacent to, directly connected to, or directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Therefore, without departing from the teachings of the present application, the first element, component, region, layer, or part discussed below may be represented as a second element, component, region, layer, or part.

[0061] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," and the like may be used herein for ease of description to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that the spatially relative terms are intended to include different orientations of the device in use and operation in addition to the orientations shown in the figures. For example, if the device in the accompanying drawings is flipped, then the elements or features described as "under other elements" or "under" or "under" will be oriented as "above" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0062] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be limiting of the present application. When used herein, the singular forms "a", "an" and " / the" are also intended to include plural forms, unless the context clearly indicates another way. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0063] In order to thoroughly understand the present application, detailed structures and steps will be presented in the following description to illustrate the technical solution proposed by the present application. The preferred embodiments of the present application are described in detail below, but in addition to these detailed descriptions, the present application may also have other implementation methods.

[0064] At least one embodiment of the present application provides a radio frequency power amplifier, including:

[0065] substrate;

[0066] A first radio frequency amplifier chip, disposed on the substrate, comprising a chip signal output terminal;

[0067] An output transformer, disposed on the substrate, comprising a primary coil and a secondary coil coupled to each other;

[0068] The primary coil comprises a first input terminal, a second input terminal and a primary signal wiring connecting the first input terminal and the second input terminal, and the chip signal output terminal is connected to the primary coil;

[0069] The primary signal routing includes a first portion of routing arranged adjacent to the first RF amplifier chip, and the first input end of the primary coil and the second input end of the primary coil are arranged away from the first RF amplifier chip relative to the first portion of routing.

[0070] This embodiment includes a substrate, and a first radio frequency amplifier chip and an output transformer disposed on the substrate. Figure 1 As shown, the first RF amplifier chip 10 and the output transformer are arranged on the substrate 100. The first RF amplifier chip 10 is configured to amplify the RF signal and output it through the chip signal output terminal. It can be understood that the number of the chip signal output terminals is not limited, and can be 1, 2, 3, 4, etc.

[0071] In at least one embodiment, Figure 1As shown, the chip signal output terminal includes a single-ended signal output terminal A, and the single-ended signal output terminal A is connected to the first input terminal or the second input terminal of the primary coil. Optionally, the single-ended signal output terminal A is connected to the first input terminal of the primary coil, and the second input terminal of the primary coil is configured to be grounded or configured to be connected to the power supply terminal. Optionally, the first RF amplifier chip includes a third power amplifier transistor, and the output terminal of the third power amplifier transistor is connected to the single-ended signal output terminal A. It can be understood that the third power amplifier transistor can be implemented as a single amplifier transistor, or it can be formed by connecting more than two amplifier transistors in series or in parallel, or other conventional implementation methods in the art are adopted, which are not limited here. In at least one implementation, the third power amplifier transistor can be a bipolar junction transistor (BJT), or a field effect transistor (FET), etc. In at least one implementation, the third power amplifier transistor is a heterojunction transistor (HBT). Exemplarily, the third power amplifier transistor is a heterojunction transistor implemented using a GaAs process. In at least one implementation, the third power amplifier transistor is an NPN transistor. It can be understood that the third power amplifier transistor can be any amplifier stage in the RF power amplifier. For example, when the RF power amplifier includes a driving stage and an output stage, the third power amplifier transistor in this embodiment can be any amplifier stage (i.e., a driving stage or an output stage) in the above-mentioned RF power amplifier.

[0072] In at least one embodiment, Figure 2 As shown, the chip signal output terminal includes a first differential output terminal B and a second differential output terminal C, the first differential output terminal B is connected to the first input terminal, and the second differential output terminal C is connected to the second input terminal. Optionally, the first RF amplifier chip includes a differential power amplifier unit, and the differential power amplifier unit may include two differential amplification paths. Figure 2For example, the differential power amplifier unit includes a first power amplifier transistor and a second power amplifier transistor. The output end of the first power amplifier transistor is connected to the first differential output end B, and the output end of the second power amplifier transistor is connected to the second differential output end C. It can be understood that the first power amplifier transistor and the second power amplifier transistor can be implemented as a single amplifier transistor, or can be formed by two or more amplifier transistors connected in series or in parallel, or other conventional implementations in the art are adopted, which are not limited here. In at least one implementation, the first power amplifier transistor can be a bipolar junction transistor (BJT), or a field effect transistor (FET), etc. The second power amplifier transistor can be a bipolar junction transistor (BJT), or a field effect transistor (FET), etc. In at least one implementation, the first power amplifier transistor is a heterojunction transistor (HBT), and the second power amplifier transistor is a heterojunction transistor (HBT). Exemplarily, the first power amplifier transistor is a heterojunction transistor implemented using a GaAs process, and the second power amplifier transistor is a heterojunction transistor implemented using a GaAs process. In at least one implementation, the first power amplifier transistor is an NPN transistor, and the second power amplifier transistor is an NPN transistor.

[0073] It can be understood that the differential power amplification unit can be any amplification stage in the RF power amplifier. For example, when the RF power amplifier includes a driving stage and an output stage, the differential power amplification unit in this embodiment can be any amplification stage (i.e., a driving stage or an output stage) in the above-mentioned RF power amplifier.

[0074] The first power amplifier transistor is configured to receive an input first RF signal through a first input path and output it through a first output path after amplification, and the first RF signal is a low-band RF signal. The second power amplifier transistor is configured to receive an input second RF signal through a second input path and output it through a second output path after amplification, and the second RF signal is a low-band RF signal. That is, the first power amplifier transistor and the second power amplifier transistor respectively serve as amplifier transistors in two differential amplification paths of a differential power amplifier unit. It can be understood that the first RF signal and the second RF signal are differential signals. Optionally, the first RF signal and the second RF signal can be two differential signals converted from an RF input signal through a power divider, or can be two differential signals after amplification by two pre-amplifier stages.

[0075] The output transformer is disposed on the substrate 100 and includes a primary coil 21 and a secondary coil 22 coupled to each other. The primary coil 21 includes a first input terminal 211, a second input terminal 212, and a primary signal trace 213 connecting the first input terminal and the second input terminal.

[0076] like Figure 1 , Figure 8 In the example, the primary signal routing includes a first portion of routing 2131 disposed adjacent to the first RF amplifier chip. It can be understood that the first portion of routing 2131 can be any portion of the primary signal routing. The first input end 211 of the primary coil 21 and the second input end 212 of the primary coil are disposed away from the first RF amplifier chip relative to the first portion of routing 2131. Figure 1 For example, the first input terminal 211 and the second input terminal 212 of the primary coil 21 are arranged on the right side of the first portion of the wiring 2131 , and the first RF amplifier chip 10 is arranged on the left side of most of the first portion of the wiring 2131 .

[0077] It can be understood that the first input terminal 211 and the second input terminal 212 of the primary coil 21 can be arranged on the right side of the first portion of the wiring 2131, and is not limited to Figure 1 For example, the first input terminal can be set in an area at the upper right, lower right or right side of the first portion of the wiring 2131. The second input terminal can be set in an area at the upper right, lower right or right side of the first portion of the wiring 2131. It can be understood that the first input terminal and the second input terminal can be set in the same area at the upper right, lower right or right side, or they can be in different areas respectively. It can be understood that the right and right side mentioned in this embodiment are relative to the right and right side of the first RF amplifier chip and / or the first portion of the wiring.

[0078] In at least one embodiment, the first portion of the wiring 2131 is the wiring closest to the first RF amplifier chip in the primary signal wiring. In at least one embodiment, the first portion of the wiring 2131 and one side of the first RF amplifier chip are arranged to be parallel.

[0079] In this embodiment, the first input end of the primary coil and the second input end of the primary coil are arranged away from the first RF amplifier chip relative to the first part of the wiring. There is sufficient space / distance between the chip signal output end and the two input ends of the primary coil, and there is sufficient space / distance for the wiring or components between the chip signal output end and the primary coil to be arranged, without the need for additional positions, thereby improving the overall integration of the RF power amplifier.

[0080] In at least one embodiment, the RF power amplifier can be used to support amplification of RF signals in the 5G frequency band, such as at least one of the N41, N77, N79 frequency bands, etc.

[0081] In at least one embodiment, the distance between the first portion of the routing and the first RF amplifier chip is smaller than the distance between the first input end of the primary coil and the first portion of the routing, and the distance between the first portion of the routing and the first RF amplifier chip is smaller than the distance between the second input end of the primary coil and the first portion of the routing.

[0082] In this embodiment, by setting the distance between the first part of the routing and the first RF amplifier chip to be smaller than the distance between the first input end of the primary coil and the first part of the routing, and the distance between the first part of the routing and the first RF amplifier chip to be smaller than the distance between the second input end of the primary coil and the first part of the routing, the overall integration of the RF power amplifier is better guaranteed.

[0083] In at least one embodiment, the distance between the first portion of the routing and the first RF amplifier chip is less than half of the distance between the first input end of the primary coil and the first portion of the routing, and the distance between the first portion of the routing and the first RF amplifier chip is less than half of the distance between the second input end of the primary coil and the first portion of the routing.

[0084] In at least one embodiment, the radio frequency power amplifier further comprises:

[0085] A passive unit network is connected between the chip signal output terminal and the primary coil of the output transformer, and at least one element in the passive unit network is arranged between the first input terminal and the first radio frequency amplifier chip.

[0086] In this embodiment, the passive unit network is composed of at least one passive element. Optionally, the passive unit network includes at least one of an inductor element, a capacitor element or a resistor element. Optionally, the passive unit network can be an output matching network of a radio frequency power amplifier or a part of an output matching network. In at least one embodiment, the passive unit network is a part of an output matching network. It is understandable that some elements of the output matching network may be arranged in the first radio frequency amplifier chip.

[0087] For example, Figure 3-Figure 4 As shown, the passive unit network 40 is connected between the chip signal output terminal and the primary coil of the output transformer. In at least one embodiment, the passive unit network 40 includes a capacitor and / or an inductor, and the capacitor and / or the inductor are surrounded by the primary signal trace.

[0088] Wherein, the capacitor element may be a discrete device or may be realized by wiring of the substrate. The inductor element may be a discrete device or may be realized by wiring of the substrate. In this embodiment, by arranging the capacitor element and / or the inductor element in the space surrounded by the primary signal routing, the space is fully utilized, and the overall integration of the RF power amplifier is better improved.

[0089] In at least one embodiment, the passive unit network includes a fourth signal line, one end of the fourth signal line is connected to the chip signal output terminal, and the other end of the fourth signal line is connected to the first input terminal or the second input terminal of the primary coil. In at least one embodiment, the passive unit network includes a fourth signal line, one end of the fourth signal line is connected to the single-ended signal output terminal A, and the other end of the fourth signal line is connected to the first input terminal or the second input terminal of the primary coil.

[0090] In at least one embodiment, the passive unit network includes a capacitor element connected between the chip signal output terminal and the primary coil of the output transformer. The capacitor element may be a discrete device or may be implemented through wiring of a substrate.

[0091] In at least one embodiment, the passive unit network includes at least a portion of a first passive unit network. In at least one embodiment, the passive unit network includes at least a portion of a second passive unit network. In at least one embodiment, the passive unit network includes at least a portion of a third passive unit network.

[0092] In at least one embodiment, the passive unit network includes at least one of a first passive unit network, a second passive unit network, and a third passive unit network.

[0093] In at least one embodiment, the secondary coil includes a first output end and a second output end, and the first output end and the second output end are arranged away from the first radio frequency amplifier chip relative to the first portion of the wiring.

[0094] In at least one embodiment, the distance between the first portion of the routing and the first RF amplifier chip is smaller than the distance between the first output end of the secondary coil and the first portion of the routing, and the distance between the first portion of the routing and the first RF amplifier chip is smaller than the distance between the second output end of the secondary coil and the first portion of the routing.

[0095] It can be understood that the first output terminal and the second output terminal of the secondary coil can be arranged on the right side of the first portion of the wiring 2131, and are not limited to Figure 1For example, the first output terminal can be set in an area at the upper right, lower right or right side of the first portion of the wiring 2131. The second output terminal can be set in an area at the upper right, lower right or right side of the first portion of the wiring 2131. It can be understood that the first output terminal and the second output terminal can be set in the same area at the upper right, lower right or right side, or they can be in different areas respectively. It can be understood that the right and right side mentioned in this embodiment are relative to the right and right side of the first RF amplifier chip and / or the first portion of the wiring.

[0096] In at least one embodiment, the distance between the first input terminal and the first RF amplifier chip is smaller than the distance between the first output terminal or the second output terminal and the first RF amplifier chip, and / or the distance between the second input terminal and the first RF amplifier chip is smaller than the distance between the first output terminal or the second output terminal and the first RF amplifier chip. Optionally, the primary coil and the secondary coil may be arranged in the same wiring layer in the substrate, and the secondary coil surrounds the primary coil.

[0097] In at least one embodiment, the distance between the first input terminal and the first RF amplifier chip is equal to the distance between the first output terminal or the second output terminal and the first RF amplifier chip, and / or the distance between the second input terminal and the first RF amplifier chip is equal to the distance between the first output terminal or the second output terminal and the first RF amplifier chip. Optionally, the primary coil and the secondary coil can be arranged in different wiring layers in the substrate, and the primary coil and the secondary coil are longitudinally coupled. It can be understood that the longitudinal direction is a relative direction. In this embodiment, the longitudinal direction is close to the thickness direction of the substrate.

[0098] In at least one embodiment, the radio frequency power amplifier further comprises:

[0099] A third signal trace is arranged in the substrate and is connected between the first input end of the primary coil and the second input end of the primary coil.

[0100] In at least one embodiment, the passive unit network includes the third signal routing, and the third signal routing includes a second portion of routing arranged in the first wiring layer of the substrate and a third portion of routing arranged in the second wiring layer of the substrate, and the second portion of routing and the third portion of routing overlap in the longitudinal projection. In at least one embodiment, the third signal routing is surrounded by the primary signal routing. By arranging the third signal routing in the area surrounded by the primary signal routing through multiple wiring layers, it can be ensured that the third signal routing has sufficient inductance value. It can be understood that the longitudinal direction is a relative direction. In this embodiment, the longitudinal direction is close to the thickness direction of the substrate.

[0101] At least one embodiment of the present application provides a radio frequency power amplifier, including:

[0102] substrate;

[0103] A first radio frequency amplifier chip, disposed on the substrate, comprising a single-ended signal output terminal;

[0104] An output transformer, disposed on the substrate, comprising a primary coil and a secondary coil coupled to each other;

[0105] The primary coil comprises a first input terminal, a second input terminal and a primary signal line connecting the first input terminal and the second input terminal, the single-ended signal output terminal is connected to the first input terminal of the primary coil, and the second input terminal of the primary coil is configured to be grounded or configured to be connected to a power supply terminal;

[0106] The primary signal wiring includes a first portion of wiring arranged adjacent to the first RF amplifier chip, and the first input end of the primary coil and the second input end of the primary coil are arranged away from the first RF amplifier chip relative to the first portion of wiring;

[0107] A passive unit network is connected between the single-ended signal output terminal and the primary coil of the output transformer, and at least one element in the passive unit network is arranged between the first input terminal and the first radio frequency amplifier chip.

[0108] In this embodiment, the first input end of the primary coil and the second input end of the primary coil are arranged relative to the first part of the wiring away from the first RF amplifier chip. As a result, there is enough space / distance between the single-ended signal output end and the two input ends of the primary coil, so that there is enough space / distance for the wiring or components between the chip signal output end and the primary coil to be arranged, and no additional position is required, thereby improving the overall integration of the RF power amplifier. By arranging a passive unit network between the single-ended signal output end and the primary coil of the output transformer, and arranging at least one element in the passive unit network between the first input end and the first RF amplifier chip, better space utilization is achieved, thereby improving the overall integration of the RF power amplifier.

[0109] At least one embodiment of the present application provides a radio frequency power amplifier, including:

[0110] substrate;

[0111] A first radio frequency amplifier chip is disposed on the substrate and includes a first differential output terminal and a second differential output terminal;

[0112] An output transformer, disposed on the substrate, comprising a primary coil and a secondary coil coupled to each other;

[0113] The primary coil includes a first input terminal, a second input terminal, and a primary signal wiring connecting the first input terminal and the second input terminal, the first differential output terminal is connected to the first input terminal, and the second differential output terminal is connected to the second input terminal;

[0114] The primary signal routing includes a first portion of routing arranged adjacent to the first RF amplifier chip, and the first input end of the primary coil and the second input end of the primary coil are arranged away from the first RF amplifier chip relative to the first portion of routing.

[0115] This embodiment includes a substrate, and a first radio frequency amplifier chip and an output transformer disposed on the substrate. Figure 5 As shown, the first radio frequency amplifier chip 10 and the output transformer 20 are arranged on the substrate 100 .

[0116] The first RF amplifier chip 10 includes a first differential output terminal B and a second differential output terminal C. It can be understood that the first RF amplifier chip 10 is configured to amplify the RF signal and output it as a differential signal. In at least one embodiment, the two differential signals of the first RF amplifier chip 10 are output through the first differential output terminal and the second differential output terminal respectively.

[0117] The output transformer is disposed on the substrate 100 and includes a primary coil 21 and a secondary coil 22 coupled to each other. The primary coil 21 includes a first input terminal 211, a second input terminal 212, and a primary signal trace 213 connecting the first input terminal and the second input terminal.

[0118] like Figure 2 In the example, the primary signal routing includes a first portion of routing 2131 disposed adjacent to the first RF amplifier chip. It can be understood that the first portion of routing 2131 can be any portion of the primary signal routing. The first input end 211 of the primary coil 21 and the second input end 212 of the primary coil are disposed away from the first RF amplifier chip relative to the first portion of routing 2131. Figure 2 For example, the first input terminal 211 and the second input terminal 212 of the primary coil 21 are arranged on the right side of the first portion of the wiring 2131 , and the first RF amplifier chip 10 is arranged on the left side of most of the first portion of the wiring 2131 .

[0119] In this embodiment, the first input end of the primary coil and the second input end of the primary coil are arranged away from the first RF amplifier chip relative to the first part of the routing. Then, the first differential output end and the first input end can be connected through the first signal routing, and the second differential output end and the second input end can be connected through the second signal routing. Compared with the scheme of directly arranging the first input end and the second input end of the primary coil directly adjacent to the two differential output ends, it can be ensured that the first signal routing and the second signal routing have sufficient length, and there can be a sufficiently large equivalent inductance between the first differential output end of the first RF amplifier chip and the first input end of the primary coil, and between the second differential output end and the second input end of the primary coil. In the scheme where this inductance needs to be set, no additional space is required to set this inductance, and the differential amplification scheme can ensure a higher output power of the RF power amplifier, and the integration of the RF power amplifier is also improved under the premise of ensuring the output power.

[0120] In at least one embodiment, the RF power amplifier is configured to support amplification of low-band RF signals. In at least one embodiment, the RF power amplifier is configured to support amplification of mid-band RF signals. In at least one embodiment, the RF power amplifier is configured to support amplification of high-band RF signals. Optionally, the frequency range of the low band includes 0.5 GHz-1.5 GHz. Optionally, the frequency range of the mid-band includes 1.7 GHz-2 GHz; the range of the high band includes 2.3 GHz-2.7 GHz. Optionally, the frequency range of the low band is 0.5 GHz-1.3 GHz. Optionally, the frequency range of the low band is 0.6 GHz-0.9 GHz. Optionally, the frequency range of the low band is 0.663 GHz-0.915 GHz.

[0121] In at least one embodiment, the radio frequency power amplifier further comprises:

[0122] a first signal wiring, wherein one end of the first signal wiring is connected to the first differential output end, and the other end of the first signal wiring is connected to the first input end of the primary coil;

[0123] A second signal wiring, one end of the second signal wiring is connected to the second differential output end, and the other end of the first signal wiring is connected to the second input end of the primary coil.

[0124] like Figure 5As shown, one end of the first signal line 31 is connected to the first differential output end, and the other end of the first signal line 31 is connected to the first input end of the primary coil. One end of the second signal line 32 is connected to the second differential output end, and the other end of the first signal line 32 is connected to the second input end of the primary coil.

[0125] The first signal routing may be implemented by at least one wiring layer in the substrate, or by wire bonding. The second signal routing may be implemented by at least one wiring layer in the substrate, or by wire bonding.

[0126] In at least one embodiment, the first signal trace is disposed in at least one wiring layer in the substrate, and the second signal trace is disposed in at least one wiring layer in the substrate.

[0127] The first signal line 31 is arranged in the substrate. It can be understood that the first signal line 31 can be arranged in any wiring layer of the substrate, or in at least two wiring layers of the substrate. One end of the first signal line 31 is connected to the first differential output end, and the other end of the first signal line is connected to the first input end of the primary coil.

[0128] The second signal line 32 is arranged in the substrate. It can be understood that the second signal line 32 can be arranged in any wiring layer of the substrate, or in at least two wiring layers of the substrate. One end of the second signal line 32 is connected to the second differential output end, and the other end of the first signal line is connected to the second input end of the primary coil.

[0129] In at least one embodiment, Figure 5 As shown, the first signal line 31 and the first part of the line 2131 overlap in the longitudinal projection, and / or the second signal line 32 and the first part of the line 2131 overlap in the longitudinal projection. Figure 5As shown, the first signal routing and the first portion of routing have overlapping portions in the longitudinal projection, and the second signal routing and the first portion of routing have overlapping portions in the longitudinal projection. It can be understood that the first signal routing and the first portion of routing only overlap in the longitudinal projection, and the two are not electrically connected through the overlapping portion of the longitudinal projection. The second signal routing and the first portion of routing only overlap in the longitudinal projection, and the two are not electrically connected through the overlapping portion of the longitudinal projection. Exemplarily, the first portion of routing and the portion of the first signal routing that overlaps in the longitudinal projection can be arranged in different wiring layers of the substrate. The first portion of routing and the portion of the second signal routing that overlaps in the longitudinal projection can be arranged in different wiring layers of the substrate.

[0130] In at least one embodiment, the secondary coil includes a first output end and a second output end, and the first output end and the second output end are arranged away from the first RF amplifier chip relative to the first portion of the wiring. The secondary coil includes a first output end and a second output end. The first output end and the second output end are also arranged away from the first RF amplifier chip relative to the first portion of the wiring.

[0131] In at least one embodiment, the first output terminal of the secondary coil is connected to a signal output terminal of a radio frequency power amplifier, and the second output terminal is configured to be grounded.

[0132] In at least one embodiment, the distance between the first input terminal and the first RF amplifier chip is smaller than the distance between the first output terminal or the second output terminal and the first RF amplifier chip, and / or the distance between the second input terminal and the first RF amplifier chip is smaller than the distance between the first output terminal or the second output terminal and the first RF amplifier chip.

[0133] In at least one embodiment, the distance between the first input terminal and the first RF amplifier chip is equal to the distance between the first output terminal or the second output terminal and the first RF amplifier chip, and / or the distance between the second input terminal and the first RF amplifier chip is equal to the distance between the first output terminal or the second output terminal and the first RF amplifier chip.

[0134] In at least one embodiment, the RF power amplifier further includes a third signal trace disposed on the substrate, connected between the first input end of the primary coil and the second input end of the primary coil, and the equivalent inductance of the third signal trace is used to participate in the matching of the RF power amplifier.

[0135] In at least one embodiment, the third signal line and the first signal line have at least one first overlapping portion in a longitudinal projection, and / or the third signal line and the second signal line have at least one second overlapping portion in a longitudinal projection. Figure 7 As shown, there is at least one first overlapping portion between the third signal routing 33 and the first signal routing 31 in the longitudinal projection, and there is at least one second overlapping portion between the third signal routing 33 and the second signal routing 32 in the longitudinal projection. It can be understood that the third signal routing 33 and the first signal routing 31 only overlap in the longitudinal projection, and the two are not electrically connected through the overlapping portion of the longitudinal projection. The third signal routing 33 and the second signal routing only overlap in the longitudinal projection, and the two are not electrically connected through the overlapping portion of the longitudinal projection. Exemplarily, the third signal routing 33 and the part of the first signal routing 31 that overlaps in the longitudinal projection can be arranged in different wiring layers of the substrate. The third signal routing 33 and the part of the second signal routing 32 that overlaps in the longitudinal projection can be arranged in different wiring layers of the substrate.

[0136] The number of the first overlapping portions can be set according to the need of the inductance value. It is understandable that, when other settings are the same, the higher the required inductance value, the more the number of the first overlapping portions. The number of the second overlapping portions can be set according to the need of the inductance value. It is understandable that, when other settings are the same, the higher the required inductance value, the more the number of the first overlapping portions.

[0137] In at least one embodiment, the third signal trace includes a second portion of traces disposed on the first wiring layer of the substrate and a third portion of traces disposed on the second wiring layer of the substrate, and the second portion of traces and the third portion of traces overlap in a longitudinal projection. Figure 7 As shown, the third signal routing line can be arranged in at least two wiring layers in the substrate, and the two portions of routing lines arranged in different wiring layers overlap in the longitudinal projection.

[0138] In at least one embodiment, the RF power amplifier further includes a capacitor element 34 disposed on the substrate, one end of the capacitor element is connected to the third signal trace, and the other end of the capacitor element is connected to the first input end of the primary coil or the second input end of the primary coil. Optionally, the capacitor element is a discrete device.

[0139] In at least one embodiment, the first portion of routing includes a first sub-routing arranged in the first wiring layer of the substrate and a second sub-routing arranged in the third wiring layer of the substrate, and the first signal routing and the first sub-routing and the second sub-routing overlap in the longitudinal projection. Figure 6-Figure 7 As shown, the first portion of routing includes a first sub-routing 21311 disposed in the first wiring layer of the substrate and a second sub-routing 21312 disposed in the third wiring layer of the substrate. The first signal routing 31 and the first sub-routing 21311 and the second sub-routing 21312 overlap in the longitudinal projection. In at least one embodiment, the second signal routing 32 and the first sub-routing and the second sub-routing overlap in the longitudinal projection.

[0140] In at least one embodiment, the first portion of routing includes a first sub-routing arranged in the first wiring layer of the substrate and a second sub-routing arranged in the third wiring layer of the substrate, the first sub-routing and the second sub-routing are connected through a first through hole 214, and the first through hole is located between the first signal routing and the second signal routing.

[0141] In at least one embodiment, the secondary coil further includes a secondary signal trace connecting the first output end and the second output end, and the primary signal trace and the secondary signal trace are arranged in the same wiring layer of the substrate.

[0142] In at least one embodiment, the secondary coil further includes a secondary signal routing line connecting the first output terminal and the second output terminal, the substrate includes a first wiring layer, a second wiring layer, and a third wiring layer arranged in sequence, the primary signal routing line is arranged in the first wiring layer and the third wiring layer, the secondary signal routing line is arranged in the second wiring layer, and the primary signal routing line and the secondary signal routing line are longitudinally coupled. The first wiring layer, the second wiring layer, and the third wiring layer can be arranged in order from top to bottom, or the first wiring layer, the second wiring layer, and the third wiring layer can be arranged in order from bottom to top. It can be understood that the first wiring layer, the second wiring layer, and the third wiring layer can be layers arranged adjacent to each other, or can be arranged at intervals.

[0143] For example, Figure 7 As shown, the primary signal lines are arranged in the first wiring layer and the third wiring layer, wherein the primary signal lines arranged in the first wiring layer and the primary signal lines arranged in the third wiring layer can be connected through vias, for example, connected through vias 214. The secondary signal line is arranged in the second wiring layer between the first wiring layer and the third wiring layer, and is longitudinally coupled with the primary signal line.

[0144] In at least one embodiment, the inductance of the first signal trace is smaller than the inductance of the primary signal trace.

[0145] At least one embodiment of the present application provides a radio frequency power amplifier, including:

[0146] substrate;

[0147] A first radio frequency amplifier chip is disposed on the substrate and includes a first differential output terminal and a second differential output terminal;

[0148] An output transformer, disposed on the substrate, comprising a primary coil and a secondary coil coupled to each other;

[0149] The primary coil comprises a first input terminal, a second input terminal and a primary signal wiring connecting the first input terminal and the second input terminal;

[0150] A first signal line is arranged in the substrate, one end of the first signal line is connected to the first differential output end, and the other end of the first signal line is connected to the first input end of the primary coil;

[0151] A second signal wiring is arranged in the substrate, one end of the second signal wiring is connected to the second differential output end, and the other end of the first signal wiring is connected to the second input end of the primary coil;

[0152] The primary signal routing includes a first portion of routing arranged adjacent to the first RF amplifier chip, and the first input end of the primary coil and the second input end of the primary coil are arranged away from the first RF amplifier chip relative to the first portion of routing.

[0153] At least one embodiment of the present application provides a radio frequency front-end module, including a radio frequency power amplifier as described in any of the above embodiments.

[0154] At least one embodiment of the present application provides an electronic device, comprising a radio frequency front-end module as described in any of the above embodiments.

[0155] At least one embodiment of the present application provides a radio frequency power amplifier, including:

[0156] A differential power amplifier unit is configured to support amplification of a low-band RF signal, and includes a first power amplifier transistor and a second power amplifier transistor; the first power amplifier transistor is configured to receive an input first RF signal through a first input path and amplify the signal and output the signal through a first output path, wherein the first RF signal is a low-band RF signal; the second power amplifier transistor is configured to receive an input second RF signal through a second input path and amplify the signal and output the signal through a second output path, wherein the second RF signal is a low-band RF signal.

[0157] The output transformer includes a primary coil and a secondary coil coupled to each other.

[0158] The first passive unit network includes a first inductor and a second inductor.

[0159] The first inductor is connected in series between the output terminal of the first power amplifying transistor and the first terminal of the primary coil.

[0160] The second inductor is connected in series between the output terminal of the second power amplifying transistor and the second terminal of the primary coil.

[0161] The radio frequency power amplifier includes a differential power amplification unit, and the differential power amplification unit may include two differential amplification paths. Fig. 9 For example, the differential power amplifier unit includes a first power amplifier transistor 11 and a second power amplifier transistor 12. Optionally, the differential power amplifier unit is arranged in the first RF amplifier chip. At this time, the output end of the first power amplifier transistor is connected to the first differential output end, and the output end of the second power amplifier transistor is connected to the second differential output end.

[0162] The first power amplifier transistor 11 is configured to receive an input first RF signal through a first input path and output it through a first output path after amplification, and the first RF signal is a low-band RF signal. The second power amplifier transistor 12 is configured to receive an input second RF signal through a second input path and output it through a second output path after amplification, and the second RF signal is a low-band RF signal. That is, the first power amplifier transistor 11 and the second power amplifier transistor 12 respectively serve as amplifier transistors in two differential amplification paths of a differential power amplifier unit. It can be understood that the first RF signal and the second RF signal are differential signals. Optionally, the first RF signal and the second RF signal can be two differential signals converted from an RF input signal by a power divider, or they can be two differential signals after amplification by two pre-amplifier stages.

[0163] In at least one embodiment, the first radio frequency signal is a low frequency band radio frequency signal. In at least one embodiment, the second radio frequency signal is a low frequency band radio frequency signal. Optionally, the frequency range of the low frequency band is 0.5 GHz-1.5 GHz. Optionally, the frequency range of the low frequency band is 0.5 GHz-1.3 GHz. Optionally, the frequency range of the low frequency band is 0.6 GHz-0.9 GHz. Optionally, the frequency range of the low frequency band is 0.663 GHz-0.915 GHz.

[0164] The output transformer includes a primary coil 21 and a secondary coil 22 coupled to each other. Optionally, the output transformer can be implemented by using the output transformer described in any of the above embodiments / implementations.

[0165] The first passive unit network includes a first inductor 31 and a second inductor 32. The first inductor 31 is connected in series between the output end of the first power amplifier transistor and the first end of the primary coil. The second inductor 32 is connected in series between the output end of the second power amplifier transistor and the second end of the primary coil. In at least one implementation, the first inductor can be implemented by the first signal routing described in any of the above embodiments / implementations, and the second inductor can be implemented by the second signal routing described in any of the above embodiments / implementations.

[0166] The inductance value of the first inductor is greater than 0.1 nH. The inductance value of the first inductor is greater than 0.1 nH.

[0167] In at least one embodiment, the inductance of the first inductor is greater than 0.3 nH, and the inductance of the second inductor is greater than 0.3 nH. In at least one embodiment, the inductance of the first inductor is greater than 0.5 nH, and the inductance of the second inductor is greater than 0.5 nH.

[0168] In at least one embodiment, the inductance value of the first inductor is greater than 0.3nH and less than 5nH, and the inductance value of the second inductor is greater than 0.3nH and less than 5nH. In at least one embodiment, the inductance value of the first inductor is greater than 0.5nH and less than 2nH, and the inductance value of the second inductor is greater than 0.5nH and less than 2nH.

[0169] In at least one embodiment, the inductance of the primary coil is greater than or equal to 3nH. In at least one embodiment, the inductance of the primary coil is greater than or equal to 5nH. In at least one embodiment, the inductance of the primary coil is less than 20nH.

[0170] In at least one embodiment, a turns ratio between the primary coil and the secondary coil is greater than 1:2.

[0171] In at least one embodiment, the inductance value of the first inductor is smaller than the inductance value of the primary coil, and the inductance value of the second inductor is smaller than the inductance value of the primary coil.

[0172] In this embodiment, the differential power amplifier unit includes a first power amplifier transistor and a second power amplifier transistor; the first power amplifier transistor is configured to receive an input first RF signal through a first input path and output it through a first output path after amplification, and the first RF signal is a low-band RF signal; the second power amplifier transistor is configured to receive an input second RF signal through a second input path and output it through a second output path after amplification, and the second RF signal is a low-band RF signal; the output transformer includes a primary coil and a secondary coil coupled to each other; the first passive unit network includes a first inductor and a second inductor; the first inductor is connected in series between the output end of the first power amplifier transistor and the first end of the primary coil, and the inductance value of the first inductor is greater than 0.1nH; the second inductor is connected in series between the output end of the second power amplifier transistor and the second end of the primary coil, and the inductance value of the second inductor is greater than 0.1nH. By amplifying the low-band RF signal through the differential power amplifier unit, a higher output power can be guaranteed, and by setting the first passive unit network, in conjunction with the output transformer, better bandwidth performance in the low frequency band can be achieved.

[0173] For example, Fig.16 As shown, Fig.16 is a simulation schematic diagram of the RF power amplifier in the above embodiment. It can be seen that within a wider frequency band (0.5 GHz-1.3 GHz), the impedance of the RF power amplifier remains relatively convergent.

[0174] In at least one embodiment, the frequency range of the low frequency band is: 0.5 GHz-1.5 GHz. In at least one embodiment, the turns ratio of the primary coil and the secondary coil of the output transformer is less than or equal to 2. Optionally, the turns ratio of the primary coil and the secondary coil can be 2:1, 2:1, 5, 1:1, 1:1.5, etc.

[0175] In at least one embodiment, the inductance of the primary coil is 3nH-20nH.

[0176] In at least one embodiment, the ratio of the inductance value of the first inductor to the inductance value of the primary coil is less than 0.5, and the ratio of the inductance value of the second inductor to the inductance value of the primary coil is less than 0.5. Exemplarily, if the inductance value of the primary coil is 15nH, the inductance value of the first inductor is less than 7.5nH.

[0177] In at least one embodiment, a ratio of the inductance value of the first inductor to the inductance value of the primary coil is less than 0.2, and a ratio of the inductance value of the second inductor to the inductance value of the primary coil is less than 0.2.

[0178] In at least one embodiment, a ratio of the inductance value of the first inductor to the inductance value of the primary coil is greater than 0.05, and a ratio of the inductance value of the second inductor to the inductance value of the primary coil is greater than 0.05.

[0179] By setting the inductance values ​​of the first inductor, the second inductor and the primary coil in a linked manner, better output impedance matching can be achieved and better bandwidth performance can be achieved.

[0180] In at least one embodiment, the RF power amplifier further includes a second passive unit network connected between the differential power amplification unit and the first passive unit network.

[0181] like Fig.10 As shown, the RF power amplifier also includes a second passive unit network 41. The second passive unit network is connected between the differential power amplification unit and the first passive unit network. It can be understood that the second passive unit network 41 can be connected between the differential power amplification unit and the first passive unit network is more of a relative position limitation. The second passive unit network 41 can be connected in series between the differential power amplification unit and the first passive unit network, or can be connected in parallel between the differential power amplification unit and the first passive unit network, or some passive elements in the second passive unit network 41 are connected in series between the differential power amplification unit and the first passive unit network, and some passive elements are connected in parallel between the differential power amplification unit and the first passive unit network.

[0182] In at least one embodiment, the second passive unit network or a part of the second passive unit network can be set up in the manner of the passive unit network described in any of the above embodiments / implementations.

[0183] In at least one embodiment, the second passive cell network includes at least one of a capacitive cell or an inductive cell.

[0184] In at least one embodiment, the second passive unit network includes a first capacitor C1.

[0185] For example, in Fig.11 In (a), the second passive unit network includes a first capacitor C1, and the first capacitor C1 is connected between the output end of the first power amplifying transistor and the output end of the second power amplifying transistor.

[0186] In at least one embodiment, the second passive unit network includes a first capacitor and a third capacitor. Fig.11In (b), the second passive unit network includes a first capacitor C1 and a third capacitor C3. One end of the first capacitor C1 is connected to the output end of the first power amplifier transistor, and the other end of the first capacitor C1 is configured to be grounded. One end of the third capacitor C3 is connected to the output end of the second power amplifier transistor, and the other end of the third capacitor C3 is configured to be grounded.

[0187] In at least one embodiment, the second passive unit network includes a first capacitor and a third inductor. Fig.11 In (c), the first capacitor C1 and the third inductor L3 are connected in series and connected between the output terminal of the first power amplifier transistor and the output terminal of the second power amplifier transistor. Optionally, the first end of the first capacitor is connected to the output terminal of the first power amplifier transistor, the second end of the first capacitor is connected to the first end of the third inductor, and the second end of the third inductor is connected to the output terminal of the second power amplifier transistor. Optionally, the first end of the first capacitor is connected to the output terminal of the second power amplifier transistor, the second end of the first capacitor is connected to the first end of the third inductor, and the second end of the third inductor is connected to the output terminal of the first power amplifier transistor.

[0188] In at least one embodiment, the second passive unit network may be Fig.11 A combination of at least two of (a), (b) and (c).

[0189] Exemplarily, the second passive unit network includes a first capacitor, a third capacitor, a fifth capacitor and a third inductor. One end of the first capacitor is connected to the output end of the first power amplifier transistor, and the other end of the first capacitor is configured to be grounded. One end of the third capacitor is connected to the output end of the second power amplifier transistor, and the other end of the third capacitor is configured to be grounded. The fifth capacitor and the third inductor are connected in series and connected between the output end of the first power amplifier transistor and the output end of the second power amplifier transistor.

[0190] In at least one embodiment, the second passive unit network includes a first capacitor, a fifth capacitor, and a third inductor. The first capacitor is connected between the output terminal of the first power amplifier transistor and the output terminal of the second power amplifier transistor. The fifth capacitor and the third inductor are connected in series and connected between the output terminal of the first power amplifier transistor and the output terminal of the second power amplifier transistor.

[0191] In at least one embodiment, the RF power amplifier further includes a third passive unit network connected between the first passive unit network and the output transformer.

[0192] like Fig.12As shown, the RF power amplifier also includes a third passive unit network 42. The third passive unit network is connected between the first passive unit network and the output transformer. It can be understood that the third passive unit network 42 can be connected between the first passive unit network and the output transformer, which is more of a relative position limitation. The third passive unit network 42 can be connected in series between the first passive unit network and the output transformer, or in parallel between the first passive unit network and the output transformer, or some passive elements in the third passive unit network 42 are connected in series between the first passive unit network and the output transformer, and some passive elements are connected in parallel between the first passive unit network and the output transformer.

[0193] In at least one embodiment, the third passive unit network or a part of the third passive unit network may be set up in the manner of the passive unit network described in any of the above embodiments / implementations.

[0194] In at least one embodiment, the third passive unit network includes at least one of a capacitive unit or an inductive unit.

[0195] In at least one embodiment, the third passive cell network includes a second capacitor C2.

[0196] In at least one embodiment, Fig.13 As described in (a), the third passive unit network includes a second capacitor, and the second capacitor is connected in series between the first end of the primary coil and the second end of the primary coil. Specifically, the first end of the second capacitor is connected to the first end of the primary coil, and the second end of the second capacitor is connected to the second end of the primary coil.

[0197] In at least one embodiment, the third passive unit network includes a second capacitor and a fourth inductor. Fig.13 As described in (b) above, the second capacitor C2 and the fourth inductor L4 are connected in series between the first end of the primary coil and the second end of the primary coil. Optionally, the first end of the second capacitor is connected to the first end of the primary coil, the second end of the second capacitor is connected to the first end of the fourth inductor, and the second end of the fourth inductor is connected to the second end of the primary coil.

[0198] In at least one embodiment, the first end of the secondary coil is configured to be connected to the output terminal, and the second end of the secondary coil is configured to be grounded.

[0199] In at least one embodiment, Fig.14As shown, the RF power amplifier further includes a second passive unit network 41 and a third passive unit network 42. The specific structures of the second passive unit network 42 and the third passive unit network 43 can refer to the contents of the above embodiments, which will not be described in detail here.

[0200] In at least one embodiment, the second passive cell network includes a first capacitor, and the third passive cell network includes a second capacitor.

[0201] In at least one embodiment, the capacitance value of the first capacitor is greater than the capacitance value of the second capacitor. In at least one embodiment, the capacitance value of the first capacitor is greater than twice the capacitance value of the second capacitor.

[0202] At least one embodiment of the present application provides a radio frequency power amplifier, characterized by comprising:

[0203] The differential power amplifier unit comprises a first power amplifier transistor and a second power amplifier transistor; the first power amplifier transistor is configured to receive a first radio frequency signal input through a first input path and output it through a first output path after amplification, and the first radio frequency signal is a low-band radio frequency signal; the second power amplifier transistor is configured to receive a second radio frequency signal input through a second input path and output it through a second output path after amplification, and the second radio frequency signal is a low-band radio frequency signal;

[0204] an output transformer, comprising a primary coil and a secondary coil coupled to each other;

[0205] A first passive unit network includes a first inductor and a second inductor;

[0206] A first inductor connected in series between the output terminal of the first power amplifier transistor and the first end of the primary coil;

[0207] The second inductor is connected in series between the output terminal of the second power amplifying transistor and the second terminal of the primary coil.

[0208] a second passive unit network, connected between the differential power amplification unit and the first passive unit network, wherein the second passive unit network includes a first capacitor;

[0209] The third passive unit network is connected between the first passive unit network and the output transformer, the third passive unit network includes a second capacitor, and the capacitance value of the first capacitor is greater than the capacitance value of the second capacitor.

[0210] At least one embodiment of the present application provides a radio frequency front-end module, including:

[0211] substrate;

[0212] A first radio frequency amplifier chip disposed on a substrate includes a differential power amplifier unit, wherein the differential power amplifier unit includes a first power amplifier transistor and a second power amplifier transistor; the first power amplifier transistor is configured to receive a first radio frequency signal input through a first input path and output the signal through a first output path after amplification, wherein the first radio frequency signal is a low-band radio frequency signal; the second power amplifier transistor is configured to receive a second radio frequency signal input through a second input path and output the signal through a second output path after amplification, wherein the second radio frequency signal is a low-band radio frequency signal;

[0213] An output transformer disposed on the substrate includes a primary coil and a secondary coil coupled to each other;

[0214] A first signal line connected in series between the output terminal of the first power amplifier transistor and the first end of the primary coil;

[0215] The second signal line is connected in series between the output terminal of the second power amplifying transistor and the second end of the primary coil.

[0216] like Fig.15 As shown, the RF front-end module includes a substrate 100, and a first RF amplifier chip and an output transformer arranged on the substrate.

[0217] The first signal wire 31 is connected in series between the output end of the first power amplifier transistor and the first end of the primary coil. The second signal wire 32 is connected in series between the output end of the second power amplifier transistor and the second end of the primary coil. Optionally, the first signal wire and the second signal wire are signal wires arranged in the substrate, or the first signal wire and the second signal wire are bonding wires. The equivalent inductance of the signal wire or bonding wire on the substrate serves as the first inductor and the second inductor in the above embodiment.

[0218] It can be understood that the RF front-end module can also include a second passive unit network, which is connected between the differential power amplifier unit and the first signal trace 31 and the second signal trace 32. The second passive unit network can be arranged in the first RF amplifier chip, or on the substrate, or some passive components of the second passive unit are arranged in the first RF amplifier chip, and other passive components are arranged on the substrate.

[0219] It can be understood that the RF front-end module can also include a third passive unit network, and the second passive unit network is connected between the first signal line 31 and the second signal line 32, and the output transformer. The third passive unit network can be set in the first RF amplifier chip, or on the substrate, or some passive components of the third passive unit are set in the first RF amplifier chip, and the other passive components are set on the substrate.

[0220] The above is only a preferred implementation of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and substitutions can be made without departing from the technical principles of the present application. These improvements and substitutions should also be regarded as the scope of protection of the present application.

Claims

1. A radio frequency power amplifier, characterized in that: include: substrate; A first radio frequency amplifier chip, disposed on the substrate, comprising a chip signal output terminal; An output transformer, disposed on the substrate, comprising a primary coil and a secondary coil coupled to each other; The primary coil comprises a first input terminal, a second input terminal and a primary signal wiring connecting the first input terminal and the second input terminal, and the chip signal output terminal is connected to the primary coil; The primary signal routing includes a first portion of routing arranged adjacent to the first RF amplifier chip, and the first input end of the primary coil and the second input end of the primary coil are arranged away from the first RF amplifier chip relative to the first portion of routing.

2. The radio frequency power amplifier according to claim 1, characterized in that: The distance between the first portion of the routing and the first RF amplifier chip is smaller than the distance between the first input end of the primary coil and the first portion of the routing, and the distance between the first portion of the routing and the first RF amplifier chip is smaller than the distance between the second input end of the primary coil and the first portion of the routing.

3. The radio frequency power amplifier according to claim 1, characterized in that: Also includes: A passive unit network is connected between the chip signal output terminal and the primary coil of the output transformer, and at least one element in the passive unit network is arranged between the first input terminal and the first radio frequency amplifier chip.

4. The radio frequency power amplifier according to claim 3, characterized in that: The passive unit network includes a capacitive element and / or an inductive element, and the capacitive element and / or the inductive element is surrounded by the primary signal trace.

5. The radio frequency power amplifier according to claim 1, characterized in that: The secondary coil includes a first output end and a second output end, and the first output end and the second output end are arranged away from the first radio frequency amplifier chip relative to the first portion of the wiring.

6. The radio frequency power amplifier according to claim 5, characterized in that: The distance between the first input terminal and the first RF amplifier chip is smaller than the distance between the first output terminal or the second output terminal and the first RF amplifier chip, and / or the distance between the second input terminal and the first RF amplifier chip is smaller than the distance between the first output terminal or the second output terminal and the first RF amplifier chip.

7. The radio frequency power amplifier according to claim 5, characterized in that: The distance between the first input terminal and the first RF amplifier chip is equal to the distance between the first output terminal or the second output terminal and the first RF amplifier chip, and / or the distance between the second input terminal and the first RF amplifier chip is equal to the distance between the first output terminal or the second output terminal and the first RF amplifier chip.

8. The radio frequency power amplifier according to claim 3, characterized in that: The passive unit network includes a third signal routing arranged in a substrate, the third signal routing includes a second portion of routing arranged in a first wiring layer of the substrate and a third portion of routing arranged in a second wiring layer of the substrate, and the second portion of routing and the third portion of routing overlap in a longitudinal projection.

9. A radio frequency power amplifier, characterized in that: include: substrate; A first radio frequency amplifier chip is disposed on the substrate and includes a first differential output terminal and a second differential output terminal; An output transformer, disposed on the substrate, comprising a primary coil and a secondary coil coupled to each other; The primary coil includes a first input terminal, a second input terminal, and a primary signal wiring connecting the first input terminal and the second input terminal, the first differential output terminal is connected to the first input terminal, and the second differential output terminal is connected to the second input terminal; The primary signal routing includes a first portion of routing arranged adjacent to the first RF amplifier chip, and the first input end of the primary coil and the second input end of the primary coil are arranged away from the first RF amplifier chip relative to the first portion of routing.

10. The radio frequency power amplifier according to claim 9, characterized in that: Also includes: a first signal wiring, wherein one end of the first signal wiring is connected to the first differential output end, and the other end of the first signal wiring is connected to the first input end of the primary coil; A second signal wiring, one end of the second signal wiring is connected to the second differential output end, and the other end of the first signal wiring is connected to the second input end of the primary coil.

11. The radio frequency power amplifier according to claim 10, characterized in that: The first signal trace is disposed in at least one wiring layer in the substrate, and the second signal trace is disposed in at least one wiring layer in the substrate.

12. The radio frequency power amplifier according to claim 11, characterized in that: The first signal routing line overlaps with the first portion of routing lines in a longitudinal projection, and / or the second signal routing line overlaps with the first portion of routing lines in a longitudinal projection.

13. The radio frequency power amplifier according to claim 11, characterized in that: Also includes: A third signal trace disposed in the substrate, connected between the first input end of the primary coil and the second input end of the primary coil; There is at least one first overlapping portion between the third signal routing and the first signal routing in a longitudinal projection, and / or there is at least one second overlapping portion between the third signal routing and the second signal routing in a longitudinal projection.

14. The radio frequency power amplifier according to claim 13, characterized in that: The third signal routing includes a second portion of routing arranged in the first wiring layer of the substrate and a third portion of routing arranged in the second wiring layer of the substrate, and the second portion of routing and the third portion of routing overlap in a longitudinal projection.

15. The radio frequency power amplifier according to claim 13, characterized in that: It also includes a first capacitor arranged on the substrate, one end of the first capacitor is connected to the third signal wiring, and the other end of the first capacitor is connected to the first input end of the primary coil or the second input end of the primary coil.

16. The radio frequency power amplifier according to claim 10, characterized in that: The first portion of routing includes a first sub-routing arranged in a first wiring layer of the substrate and a second sub-routing arranged in a third wiring layer of the substrate, and the first signal routing, the first sub-routing and the second sub-routing are overlapped in a longitudinal projection.

17. The radio frequency power amplifier according to claim 11, characterized in that: The first portion of routing includes a first sub-routing arranged in the first wiring layer of the substrate and a second sub-routing arranged in the third wiring layer of the substrate, the first sub-routing and the second sub-routing are connected through a first through hole, and the first through hole is located between the first signal routing and the second signal routing.

18. The radio frequency power amplifier according to claim 11, characterized in that: The secondary coil includes a first output end, a second output end, and a secondary signal trace connecting the first output end and the second output end, and the primary signal trace and the secondary signal trace are arranged in the same wiring layer of the substrate.

19. The radio frequency power amplifier according to claim 11, characterized in that: The secondary coil includes a first output end, a second output end and a secondary signal trace connecting the first output end and the second output end, the substrate includes a first wiring layer, a second wiring layer and a third wiring layer arranged in sequence, the primary signal trace is arranged in the first wiring layer and the third wiring layer, the secondary signal trace is arranged in the second wiring layer, and the primary signal trace and the secondary signal trace are longitudinally coupled.

20. The radio frequency power amplifier according to claim 11, characterized in that: The inductance value of the first signal wiring is smaller than the inductance value of the primary signal wiring.

21. A radio frequency front-end module, characterized in that: Comprising a radio frequency power amplifier as described in any one of claims 1-20.

22. An electronic device, characterized in that: Comprising the RF front-end module as described in claim 21.

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