Organic light emitting diode display panel and display device

Abstract

The invention discloses an organic light emitting diode display panel and a display device. The organic light-emitting diode display panel comprises a substrate, a thin film transistor device layer located on the substrate, a light-emitting layer electrically connected to the thin film transistor device layer, a heightening layer located between the substrate and a cathode, a boss part located on the side, away from the substrate, of the heightening layer, and an auxiliary electrode. The auxiliary electrode wraps the first part located on the boss part and extends from the first part to the second part located on the lower horizontal plane, the side, close to the second part, of the supporting layer on the first part protrudes out of the first part and is suspended above the second part, and the mass production reliability of the undercut structure is improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to an organic light emitting diode display panel and a display device. Background Art

[0002] With the development of display technology, various display technologies are constantly being innovated. Among them, organic light emitting diodes (OLED) have the advantages of thin thickness, self-luminescence, high color saturation and bendability, making organic light emitting diodes known as the rising star of display technology.

[0003] When the OLED panel is working, there will be a problem of voltage decay (IR drop) in the display center and outside the center and the edges around it (that is, the voltage drop causes the final brightness to be uneven). Auxiliary electrodes need to be made to provide additional assistance to the area with a larger voltage drop so that the entire panel can display a uniform picture when it is working. At present, the main solution for preparing auxiliary electrodes is to make an undercut structure on the backplane so that the cathode and the auxiliary source overlap to achieve the function of the auxiliary electrode. The traditional undercut structure uses an additional pad layer as a support layer, but the newly added pad mask not only increases the cost, but is also not conducive to shortening the process time. Specifically, the traditional undercut structure is to etch the passivation layer under the support layer by hydrogen fluoride. The interface density between the undercut structure and the passivation layer formed by wet side etching in combination with the support layer will have an important influence on the depth and shape of the undercut. In addition, if a flat layer is used as a support layer, since the flat layer is an organic material, its hardness is not as good as that of an inorganic material, and the interface adhesion with the passivation layer is not good. When hydrogen fluoride etches the passivation layer, the side etching rate is very fast, resulting in too fast side etching of the top of the passivation layer at the interface and slow side etching of the bottom. Ultimately, the actual depth of the undercut is insufficient, the etching side inclination angle (taper) of the passivation layer is gentle, or when the depth is sufficient, it causes poor support stability of the flat layer, resulting in the risk of collapse in subsequent processes. Summary of the invention

[0004] The present application provides an organic light emitting diode display panel and a display device, which are used to solve the technical problems that the actual depth of the traditional undercut structure is insufficient, the etching side taper of the passivation layer is relatively gentle, or when the depth is sufficient, the support stability of the flat layer is poor, resulting in the risk of collapse in the subsequent process.

[0005] To solve the above problems, the technical solutions provided by this application are as follows:

[0006] In a first aspect, an embodiment of the present application provides an organic light emitting diode display panel, comprising:

[0007] substrate;

[0008] A thin film transistor layer, located on the substrate;

[0009] A light-emitting layer, electrically connected to the thin film transistor layer, comprising a cathode;

[0010] A pad layer, located between the substrate and the cathode;

[0011] a protrusion layer, located at a side of the padding layer away from the substrate, comprising a main body portion and a protrusion portion protruding from the main body portion and located directly above the padding layer;

[0012] an auxiliary electrode, comprising a first portion located on the protruding portion, and a second portion extending from the first portion to the main body portion, wherein the first portion is located at a higher level than the second portion; and

[0013] A support layer is located on the first part, wherein a side of the support layer close to the second part protrudes from the first part and is suspended above the second part;

[0014] Wherein, the cathode contacts the second portion.

[0015] In some embodiments, the thin film transistor device layer includes a thin film transistor electrically connected to the light emitting layer and a light shielding layer located below the thin film transistor;

[0016] Wherein, the cushioning layer and the light shielding layer are arranged at the same layer.

[0017] In some embodiments, the thin film transistor device layer further includes a buffer layer located on the light shielding layer and the substrate, and an interlayer dielectric layer located on the buffer layer;

[0018] Wherein, the platform layer includes the buffer layer and the interlayer dielectric layer;

[0019] The protrusion portion includes a first protrusion formed by protruding upward from a region of the buffer layer corresponding to the raising layer, and a second protrusion formed by protruding upward from a region of the interlayer dielectric layer corresponding to the raising layer.

[0020] In some embodiments, the thin film transistor in the thin film transistor device layer electrically connected to the light emitting layer includes an active layer, a gate insulating layer, a gate, a source electrode and a drain electrode;

[0021] The padding layer includes a first film layer or a second film layer, the first film layer and the gate insulating layer are formed by patterning the same film layer, and the second film layer and the gate are formed by patterning the same film layer.

[0022] In some embodiments, the padding layer includes at least the first film layer and the second film layer which are stacked.

[0023] In some embodiments, the thin film transistor device layer further includes a buffer layer between the substrate and the thin film transistor, and an interlayer dielectric layer on the buffer layer and the padding layer;

[0024] Wherein, the protrusion layer is the interlayer dielectric layer;

[0025] The protruding platform is formed by an area of ​​the interlayer dielectric layer corresponding to the raised layer protruding upward.

[0026] In some embodiments, the thin film transistor in the thin film transistor device layer electrically connected to the light emitting layer includes an active layer, a gate insulating layer, a gate, a source electrode and a drain electrode;

[0027] Wherein, the auxiliary electrode is arranged in the same layer as the source electrode and the drain electrode.

[0028] In some embodiments, the organic light emitting diode display panel further comprises:

[0029] A passivation layer, located on the thin film transistor layer;

[0030] a planar layer, located on the passivation layer;

[0031] The support layer includes a first support portion in the planar layer corresponding to the padding layer, and a second support portion in the passivation layer corresponding to the padding layer. The first support portion includes a groove, and the second support portion is enclosed in the groove.

[0032] In some embodiments, the organic light emitting diode display panel further comprises:

[0033] An undercut channel is located on the second portion, a through hole penetrating the planar layer is provided above the undercut channel, and a gap is provided between the orthographic projection of the substrate and the orthographic projection of the padding layer on the substrate.

[0034] In some embodiments, an orthographic projection of a bottom surface of the first supporting portion adjacent to the undercut channel on the substrate is located within an orthographic projection of the undercut channel on the substrate.

[0035] In some embodiments, the light-emitting layer includes an anode and a light-emitting functional layer located on the anode, and the cathode is located on the light-emitting functional layer;

[0036] The light-emitting functional layer and the cathode are in contact with the auxiliary electrode through the through hole and the undercut channel, and the orthographic projection of the light-emitting functional layer in the undercut channel is located within the boundary of the orthographic projection of the cathode in the undercut channel.

[0037] In a second aspect, embodiments of the present application further provide a display device, comprising the organic light emitting diode display panel described in the above embodiments.

[0038] The beneficial effects of the present application are as follows: the embodiments of the present application provide an organic light-emitting diode display panel and a display device, which increases the terrain of the film layer above it by setting a cushioning layer, so that the auxiliary electrode includes a first part and a second part located at different horizontal plane heights, thereby increasing the horizontal height of the support layer, so that in the thickness direction of the film layer, a gap is formed between the support layer and the auxiliary electrode, solving the problem of side etching of the support layer etching interface, and improving the shape stability of the support layer. At the same time, the influence of the terrain corrects the inclination angle of the support layer, so that the support layer meets the support requirements at the actual depth of the undercut structure, improves the mass production reliability of the undercut structure, and can reduce the number of masks used in the manufacturing process. Accordingly, the organic light-emitting diode display panel and the display device of the present application effectively solve the technical problems that the actual depth of the traditional undercut structure is insufficient, the inclination angle of the etching side of the support layer is relatively slow, or when the depth is satisfied, the support stability of the support layer is poor, causing the risk of collapse in the subsequent process. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the technical solutions in the embodiments or the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0040] Figure 1 FIG. 4 is a schematic cross-sectional structure diagram of an organic light emitting diode display panel according to an embodiment of the present application.

[0041] Figure 2 It is a schematic structural diagram of the undercut channel of an embodiment of the present application.

[0042] Figure 3 It is a schematic diagram of the structure of raising the terrain of the cushioning layer and the upper membrane layer in the embodiment of the present application.

[0043] Figure 4 Schematic diagram of optical simulation of the passivation layer and the planarization layer in the undercut channel according to an embodiment of the present application.

[0044] Figure 5 FIG. 4 is a schematic cross-sectional structure diagram of an organic light emitting diode display panel according to another embodiment of the present application.

[0045] Figure 6 Schematic diagram of the structure of a display device according to an embodiment of the present application. DETAILED DESCRIPTION

[0046] The following descriptions of the embodiments are with reference to the attached diagrams to illustrate specific embodiments that the present application can be implemented in. The directional terms mentioned in the present application, such as [up], [down], [front], [back], [left], [right], [inside], [outside], [side], etc., are only with reference to the directions of the attached drawings. Therefore, the directional terms used are used to illustrate and understand the present application, rather than to limit the present application. In the figures, units with similar structures are represented by the same reference numerals. In the accompanying drawings, the thickness of some layers and regions is exaggerated for clear understanding and ease of description. That is, the size and thickness of each component shown in the drawings are arbitrarily shown, but the present application is not limited to this.

[0047] The embodiments of the present application provide an organic light emitting diode (OLED) display panel and a display device, which can improve the problem that the conventional undercut structure is insufficient in support and easily causes the risk of collapse. The following are detailed descriptions. It should be noted that the description order of the following embodiments is not intended to limit the preferred order of the embodiments.

[0048] See also Figure 1 . Figure 1 FIG. 1 is a schematic cross-sectional view of an organic light emitting diode display panel 100 according to an embodiment of the present application. Figure 1 As shown, the organic light emitting diode display panel 100 of the present application includes a substrate 11 and a thin film transistor device layer 1 and a light emitting layer 2 located on the substrate 11 , wherein the thin film transistor device layer 1 includes a functional film layer and a thin film transistor 3 .

[0049] In this embodiment, the substrate 11 can be made of a hard material such as glass, or a flexible material such as polyimide. Figure 1 As shown, the functional film layer of the organic light emitting diode display panel 100 includes a buffer layer 12 located on the substrate 11 and an interlayer dielectric layer 13 located on the buffer layer 12. The buffer layer 12 can be made of silicon oxide or silicon nitride. A passivation layer 14 is arranged on the interlayer dielectric layer 13. The material of the passivation layer 14 can be an inorganic insulating film of silicon oxide or silicon nitride, and covers the side of the thin film transistor 3 away from the substrate 11. A flat layer 15 is arranged on the passivation layer 14. Specifically, the material of the flat layer 15 can be an organic photoresist, such as soluble polytetrafluoroethylene (PFA) or polyimide glue, but the present application is not limited thereto. The light emitting layer 2 is arranged on the side of the flat layer 15 away from the passivation layer 14.

[0050] See also Figure 1The light-emitting layer 2 includes an anode 21, a pixel definition layer 22, a light-emitting functional layer 23 and a cathode 24 arranged in sequence. The pixel definition layer 22 is provided with a plurality of concave holes, and the anode 21, the light-emitting functional layer 23 and the cathode 24 are directly stacked in the concave holes. In this embodiment, the light-emitting functional layer 23 and the cathode 24 are arranged along the surface of the pixel definition layer 22.

[0051] like Figure 1 As shown, the thin film transistor device layer 1 includes a light shielding layer 31 located on the substrate 11, an active layer 32 located on the buffer layer 12, a gate insulating layer 33 located on the active layer 32, a gate 34 located on the gate insulating layer 33, and a source 35 and a drain 36 located on the interlayer dielectric layer 13. The source 35 and the drain 36 are electrically connected to the active layer 32 through via holes located on the interlayer dielectric layer 13, the source 35 is electrically connected to the light shielding layer 31 through via holes on the interlayer dielectric layer 13 and the buffer layer 12, and the interlayer dielectric layer 13 covers the active layer 32, the gate insulating layer 33, and the gate 34. Specifically, the active layer 32, the gate insulating layer 33, the gate 34, the source 35 and the drain 36 together constitute the thin film transistor 3, wherein the gate 34 is defined as a first metal layer, the source 35 and the drain 36 are defined as a second metal layer, and the light shielding layer 31 is located between the substrate 11 and the buffer layer 12. It should be noted that the thin film transistor of the present application is a top-gate thin film transistor as an embodiment, but a bottom-gate thin film transistor may also be used. In addition, the thin film transistor of the present application may be a low-temperature polysilicon thin film transistor or an oxide semiconductor thin film transistor, and the type of the thin film transistor is not limited in the present application.

[0052] It is particularly noted that the organic light emitting diode display panel 100 of the embodiment of the present application is provided with an undercut structure with an auxiliary electrode to improve the problem of IR drop at the edges or other locations of the display panel. Figure 1 Cooperate Figure 2 . Figure 2 is a schematic diagram of the structure of the undercut channel of an embodiment of the present application, wherein Figure 2 It is mainly used to illustrate the undercut channel, so the light-emitting functional layer and cathode are not shown. Figure 1As shown, the functional film layer of the present application also includes a padding layer 30 and a protrusion 10. In this embodiment, the padding layer 30 is arranged in the same layer as the light shielding layer 31. Specifically, the padding layer 30 is a part of the light shielding layer 31 patterned by a photolithography process, that is, the padding layer 30 and the light shielding layer 31 are formed by the same photolithography process. Since the provision of the padding layer 30 increases the terrain of other film layers above, the terrain of the buffer layer 12 on the padding layer 30 is correspondingly increased, and a first protrusion 120 is formed; the terrain of the interlayer dielectric layer 13 on the buffer layer 12 is correspondingly increased, and a second protrusion 130 is formed. That is, a protrusion portion 10 including a first protrusion 120 and a second protrusion 130 is formed directly above the padding layer 30. Specifically, the protrusion portion 10 includes a first top surface 101 and a side wall 102 located on one side of the first top surface 101. In this embodiment, the first top surface 101 and the sidewall 102 are formed on the second protrusion 130. In other words, the first protrusion 120 can be formed simultaneously during the process of preparing the buffer layer 12; and the second protrusion 130 can be formed simultaneously during the process of preparing the interlayer dielectric layer 13.

[0053] See also Figure 1 . The organic light emitting diode display panel 100 of the present application includes an auxiliary electrode 37, which is located between the light emitting layer 2 and the substrate 11, and covers the second part 371 and the first part 372. The first part 372 is located on the first top surface 101, that is, on the second protrusion 130. The second part 371 is adjacent to the side wall 102. Due to the setting of the second protrusion 130, the terrain of the first part 372 is increased, so that the horizontal plane height of the first part 372 is higher than the horizontal plane height of the second part 371. Specifically, the raised layer 30, the first protrusion 120, the second protrusion 130 and the first part 372 are aligned with each other in the axial direction. In this embodiment, the auxiliary electrode 37 is arranged in the same layer as the source 35 and the drain 36. That is, the auxiliary electrode 37 and the source 35 and the drain 36 are formed by the second metal layer through a photolithography process.

[0054] like Figure 1 As shown, the undercut channel 201 is located on the second portion 371 of the auxiliary electrode 37, and a through hole 202 penetrating the flat layer 15 is provided above the undercut channel 201. In this embodiment, the undercut channel 201 is formed by etching the passivation layer 14 on the auxiliary electrode 37 with hydrogen fluoride. Specifically, the orthographic projection of the undercut channel 201 on the substrate 11 and the orthographic projection of the padding layer 30 on the substrate 11 are spaced apart from each other.

[0055] See also Figure 1The planar layer 15 includes a first support portion 150, which includes a groove 151. The passivation layer 14 includes a second support portion 140, and the second support portion 140 is covered in the groove 151. Since the elevation layer 30 is elevated, the first support portion 150 and the second support portion 140 are respectively located on the first portion 372 of the auxiliary electrode 37, and parts of the first support portion 150 and the second support portion 140 extend out of the side wall 102 and are suspended above the undercut channel 201 (such as Figure 2 shown).

[0056] See also Figure 1 Cooperate Figures 2 to 4 . Figure 3 The schematic diagram of the structure of the raised layer and the upper membrane layer according to the embodiment of the present application is as follows: Figure 3 In order to schematically illustrate the relationship between the padding layer 30 and the undercut channel 201 , the buffer layer 12 is not shown. Figure 4 FIG. 2 is a schematic diagram of optical simulation of the passivation layer 14 and the planarization layer 15 in the undercut channel 201 of the present application. Figure 1 and Figure 2 As shown, one end of the undercut channel 201 is connected to the through hole 202 above, and the other end is closed to the first portion 372 of the auxiliary electrode 37. Through the structure of the undercut channel 201, the orthographic projections of the bottom surface of the first support portion 150 adjacent to the undercut channel 201 are all located on the undercut channel 201. In other words, as the etching time increases, the side etching length L1 at the top of the passivation layer 14 is affected by the terrain and blocked by the first portion 372 of the auxiliary electrode 37, so that the depth of the side etching length L1 is limited, thereby increasing the depth of the side etching length L2 at the bottom of the passivation layer 14 and gradually approaching the depth of L1, and finally correcting the inclination angle (taper) of the passivation layer 14 to more than 30°, and the actual depth of the undercut channel 201 (that is, L2) reaches 1 micron (as shown in FIG. 2 ). Figure 2 As shown), the stability of the undercut shape (i.e., the suspended portion) of the flat layer 15 is improved (as shown Figure 4 shown).

[0057] See also Figure 1, the light-emitting functional layer 23 and the cathode 24 are in contact with the second portion 371 of the auxiliary electrode 37 through the through hole 202 and the undercut channel 201. It is particularly noted that, by controlling the evaporation angles of the light-emitting functional layer 23 and the cathode 24, the orthographic projection of the light-emitting functional layer 23 on the cathode 24 is located within the boundary of the cathode 24 in the undercut channel 201. That is, the light-emitting functional layer 23 is disconnected in the corresponding area of ​​the undercut channel 201 to increase the contact area between the cathode 24 and the auxiliary electrode 37, and is conducive to the cathode 24 extending toward the undercut channel 201, thereby increasing the contact area between the cathode 24 and the auxiliary electrode 37, and better overlapping the electrical connection to reduce the voltage drop.

[0058] See also Figure 5 , which is a schematic cross-sectional structure diagram of an organic light emitting diode display panel 100 ′ according to another embodiment of the present application. Figure 5 The embodiment shown is different from the above-mentioned embodiment in that the padding layer 30' is set at a different position, and other structures that are the same as the above-mentioned embodiment will not be repeated in this embodiment. In this embodiment, the padding layer 30' is located on the buffer layer 12', and includes a first film layer 330 and a second film layer 340 that are stacked on each other. The first film layer 330 is a portion of the gate insulation layer 33 after patterning, that is, the first film layer 330 and the gate 34 are made by the same photolithography process. In addition, the second film layer 340 is a portion of the gate 34 after patterning, that is, the second film layer 340 and the gate 34 are made by the first metal layer through the same photolithography process. It should be noted that the second film layer 340 and the first film layer 330 can be made by the same photolithography process through a self-alignment process. In this embodiment, since the elevation layer 30' formed by the first film layer 330 and the second film layer 340 increases the terrain of the upper film layer, the terrain of the interlayer dielectric layer 13' located above the elevation layer 30' increases accordingly, and a protrusion 10' is formed. That is, the protrusion 10' of this embodiment is formed on the interlayer dielectric layer 13 and is located directly above the elevation layer 30'. Figure 5 As shown, the protruding platform 10' of this embodiment includes a first top surface 101' and a side wall 102' located on one side of the first top surface 101'. In this embodiment, the padding layer 30' is located on the buffer layer 12', which can also achieve the effect of increasing the terrain, so that the terrain of the upper film layer is raised to the same level as Figure 1 The same effect as the raised layer of the illustrated embodiment.

[0059] See also Figure 6, which is a schematic diagram of the structure of the display device of the embodiment of the present application. The embodiment of the present application also provides a display device 200, including the organic light emitting diode display panel 100 of any of the above embodiments, and the display device 200 can be an electronic product such as a television, a laptop computer, a tablet computer or a mobile phone.

[0060] In summary, the embodiments of the present application provide an organic light-emitting diode display panel and a display device, which increases the terrain of the film layer above it by setting a cushioning layer, so that the auxiliary electrode includes a first part and a second part located at different horizontal plane heights, thereby increasing the horizontal height of the support layer, so that in the thickness direction of the film layer, a gap is formed between the support layer and the auxiliary electrode, solving the problem of side etching of the etching interface of the support layer, and improving the shape stability of the support layer. At the same time, the influence of the terrain corrects the inclination angle of the support layer, so that the support layer meets the support requirements at the actual depth of the undercut structure, improves the mass production reliability of the undercut structure, and can reduce the number of masks used in the manufacturing process. Accordingly, the organic light-emitting diode display panel and the display device of the present application effectively solve the technical problems that the actual depth of the traditional undercut structure is insufficient, the inclination angle of the etching side of the support layer is relatively slow, or when the depth is satisfied, the support stability of the support layer is poor, resulting in the risk of collapse in the subsequent process.

[0061] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0062] The embodiments of the present application are introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the technical solution and core idea of ​​the present application. Ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein with equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. An organic light emitting diode display panel, characterized in that: include: substrate; A thin film transistor layer, located on the substrate; A light-emitting layer, electrically connected to the thin film transistor layer, comprising a cathode; A pad layer, located between the substrate and the cathode; a protrusion layer, located at a side of the padding layer away from the substrate, comprising a main body portion and a protrusion portion protruding from the main body portion and located directly above the padding layer; an auxiliary electrode, comprising a first portion located on the protruding portion, and a second portion extending from the first portion to the main body portion, wherein the first portion is located at a higher level than the second portion; and A support layer is located on the first part, wherein a side of the support layer close to the second part protrudes from the first part and is suspended above the second part; Wherein, the cathode contacts the second portion.

2. The organic light emitting diode display panel according to claim 1, wherein: The thin film transistor device layer includes a thin film transistor electrically connected to the light emitting layer and a light shielding layer located below the thin film transistor; Wherein, the cushioning layer and the light shielding layer are arranged at the same layer.

3. The organic light emitting diode display panel according to claim 2, wherein: The thin film transistor device layer further comprises a buffer layer located on the light shielding layer and the substrate, and an interlayer dielectric layer located on the buffer layer; Wherein, the platform layer includes the buffer layer and the interlayer dielectric layer; The protrusion portion includes a first protrusion formed by protruding upward from a region of the buffer layer corresponding to the raising layer, and a second protrusion formed by protruding upward from a region of the interlayer dielectric layer corresponding to the raising layer.

4. The organic light emitting diode display panel according to claim 1, wherein: The thin film transistor in the thin film transistor device layer electrically connected to the light emitting layer comprises an active layer, a gate insulating layer, a gate, a source electrode and a drain electrode; The padding layer includes a first film layer or a second film layer, the first film layer and the gate insulating layer are formed by patterning the same film layer, and the second film layer and the gate are formed by patterning the same film layer.

5. The organic light emitting diode display panel according to claim 4, wherein: The cushioning layer at least includes the first film layer and the second film layer which are stacked.

6. The organic light emitting diode display panel according to claim 4 or 5, characterized in that: The thin film transistor device layer further comprises a buffer layer located between the substrate and the thin film transistor, and an interlayer dielectric layer located on the buffer layer and the padding layer; Wherein, the protrusion layer is the interlayer dielectric layer; The protruding platform is formed by an area of ​​the interlayer dielectric layer corresponding to the raised layer protruding upward.

7. The organic light emitting diode display panel according to any one of claims 1 to 5, characterized in that: The thin film transistor in the thin film transistor device layer electrically connected to the light emitting layer comprises an active layer, a gate insulating layer, a gate, a source electrode and a drain electrode; Wherein, the auxiliary electrode is arranged in the same layer as the source electrode and the drain electrode.

8. The organic light emitting diode display panel according to any one of claims 1 to 5, characterized in that: Also includes: A passivation layer, located on the thin film transistor layer; a planar layer, located on the passivation layer; The support layer includes a first support portion in the planar layer corresponding to the padding layer, and a second support portion in the passivation layer corresponding to the padding layer. The first support portion includes a groove, and the second support portion is enclosed in the groove.

9. The organic light emitting diode display panel according to claim 8, wherein: Also includes: An undercut channel is located on the second portion, a through hole penetrating the planar layer is provided above the undercut channel, and a gap is provided between the orthographic projection of the substrate and the orthographic projection of the padding layer on the substrate.

10. The organic light emitting diode display panel according to claim 9, wherein: An orthographic projection of a bottom surface of the first supporting portion adjacent to the undercut channel on the substrate is located within an orthographic projection of the undercut channel on the substrate.

11. The organic light emitting diode display panel according to any one of claims 1 to 5, 9 and 10, characterized in that: The light-emitting layer further comprises an anode, a light-emitting functional layer located on the anode, and the cathode is located on the light-emitting functional layer; The light-emitting functional layer and the cathode are in contact with the auxiliary electrode through the through hole and the undercut channel, and the orthographic projection of the light-emitting functional layer in the undercut channel is located within the boundary of the orthographic projection of the cathode in the undercut channel.

12. A display device, characterized in that: It comprises the organic light emitting diode display panel as claimed in any one of claims 1 to 11.

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