Display panel, preparation method of display panel and display device

Abstract

The embodiment of the invention provides a display panel, a preparation method of the display panel and a display device.The display panel comprises a substrate, a pixel definition layer, a light-emitting device layer, a photoelectric sensing device layer, a supporting structure and a sacrificial structure, the light-emitting device layer comprises a plurality of light-emitting units, each light-emitting unit comprises a plurality of first function layers arranged in a stacked mode, and the sacrificial structure comprises a plurality of second function layers arranged in a stacked mode; the plurality of first functional layers comprise at least one first carrier layer; the active layer comprises a plurality of photoelectric sensing units, each photoelectric sensing unit comprises a plurality of stacked second functional layers, and the plurality of second functional layers comprise at least one second carrier layer; the sacrificial structure is arranged between the supporting structure and the pixel defining layer, and at least part of at least one first carrier layer in the light emitting unit and at least part of at least one second carrier layer in the adjacent photoelectric sensing unit are located on the two sides of the corresponding sacrificial structure. In the display panel provided by the embodiment of the invention, the signal-to-noise ratio of the electric signal generated by the photoelectric sensing unit is high.

Description

Technical Field

[0001] The present application relates to the technical field of display devices, and in particular to a display panel, a method for preparing a display panel, and a display device. Background Art

[0002] Liquid Crystal Display (LCD) panels, Organic Light Emitting Display (OLED) panels, and display panels using Light Emitting Diode (LED) devices are widely used in electronic products such as mobile phones, televisions, personal digital assistants, digital cameras, laptops, desktop computers, etc. due to their advantages such as high image quality, power saving, thin body, and wide application range.

[0003] In the related art, a light-emitting unit and a photoelectric sensing unit are provided in the display panel, so that the light-emitting unit displays light and the photoelectric sensing unit realizes photoelectric conversion. The carriers in the photoelectric sensing unit are easily affected by the carriers in the working light-emitting unit, resulting in a low signal-to-noise ratio of the electrical signal generated by the photoelectric sensing unit. Summary of the invention

[0004] The embodiments of the present application provide a display panel, a method for manufacturing a display panel, and a display device, which are intended to solve the technical problem of low signal-to-noise ratio of electrical signals generated by photoelectric sensing units.

[0005] An embodiment of a first aspect of the present application provides a display panel, including:

[0006] substrate;

[0007] A pixel definition layer is disposed on one side of the substrate, the pixel definition layer includes a plurality of first openings and a plurality of second openings, at least some of the first openings and at least some of the second openings are adjacent to each other;

[0008] The light-emitting device layer includes a plurality of light-emitting units, parts of the light-emitting units are arranged in the corresponding first openings, the light-emitting units include a plurality of first functional layers arranged in a stacked manner, and the plurality of first functional layers include at least one first carrier layer;

[0009] The photoelectric sensor device layer includes a plurality of photoelectric sensor units, parts of the photoelectric sensor units are arranged in the corresponding second openings, the photoelectric sensor units include a plurality of second functional layers arranged in a stacked manner, and the plurality of second functional layers include at least one second carrier layer;

[0010] A plurality of sacrificial structures are arranged on a side of the pixel definition layer away from the substrate;

[0011] A plurality of support structures, wherein the support structures are arranged on a side of the corresponding sacrificial structure away from the pixel definition layer, and the orthographic projection of the sacrificial structure on the substrate is located within the orthographic projection of the support structure on the substrate;

[0012] Wherein, at least a portion of at least one first carrier layer in the light-emitting unit and at least a portion of at least one second carrier layer in the adjacent photoelectric sensing unit are located on both sides of the corresponding sacrificial structure.

[0013] According to an embodiment of the first aspect of the present application, at least one first carrier layer includes a first hole injection layer and a first hole transport layer, the first hole injection layer is located on a side of the first hole transport layer close to the substrate, and at least one second carrier layer includes a second hole injection layer and a second hole transport layer, the second hole injection layer is located on a side of the second hole transport layer close to the substrate;

[0014] The first hole injection layer in the light emitting unit and the second hole injection layer in the adjacent photoelectric sensing unit are located on both sides of the corresponding sacrificial structure.

[0015] According to the implementation of the first aspect of the present application, the first hole transport layer in the light-emitting unit and the second hole transport layer in the adjacent photoelectric sensing unit are located on both sides of the corresponding sacrificial structure.

[0016] According to an implementation of the first aspect of the present application, the pixel definition layer has a first surface facing away from the substrate, a sacrificial structure is arranged on the first surface, at least one first carrier layer extends from the first opening to the first surface, and at least one second carrier layer extends from the second opening to the first surface.

[0017] According to an embodiment of the first aspect of the present application, the sacrificial structure is spaced apart from at least a portion of at least one first carrier layer in the corresponding light emitting unit and at least a portion of at least one second carrier layer in the photoelectric sensing unit.

[0018] According to an implementation of the first aspect of the present application, at least one first carrier layer in adjacent light-emitting units is an integrated structure.

[0019] According to the implementation scheme of the first aspect of the present application, the light-emitting unit includes a first electrode, which is arranged on the side of the multiple first functional layers away from the substrate, and the photoelectric sensing unit includes a second electrode, which is arranged on the side of the multiple second functional layers away from the substrate, and the first electrode and the second electrode are an integrated structure.

[0020] According to an embodiment of the first aspect of the present application, the plurality of first functional layers include a light-emitting layer and at least one third carrier layer sequentially stacked on at least one first carrier layer, and the plurality of second functional layers include an active layer and at least one fourth carrier layer sequentially stacked on at least one second carrier layer;

[0021] Wherein, at least one third carrier layer in the light-emitting unit and at least one fourth carrier layer in the adjacent photoelectric sensing unit extend to a side of the corresponding supporting structure away from the substrate, and are connected in an integrated manner.

[0022] According to an embodiment of the first aspect of the present application, at least one third carrier layer includes a first electron injection layer and a first electron transport layer, the first electron injection layer is located on a side of the first electron transport layer facing away from the substrate, and at least one fourth carrier layer includes a second electron injection layer and a second electron transport layer, the second electron injection layer is located on a side of the second electron transport layer facing away from the substrate;

[0023] The first electron injection layer and the second electron injection layer extend to a side of the corresponding support structure away from the substrate and are connected in an integrated manner.

[0024] According to an implementation of the first aspect of the present application, the first electron transport layer and the second electron transport layer extend to a side of the corresponding first electron injection layer and the second electron injection layer facing away from the substrate, and are connected as an integral unit.

[0025] According to an implementation of the first aspect of the present application, in a first direction perpendicular to the substrate, the sacrificial structure has a first thickness, the supporting structure has a second thickness, and the first thickness is less than the second thickness.

[0026] According to an implementation of the first aspect of the present application, the second thickness is greater than or equal to 1000 nm.

[0027] According to an implementation of the first aspect of the present application, the first thickness is greater than or equal to 150 nm.

[0028] According to an embodiment of the first aspect of the present application, the multiple first functional layers include a light-emitting layer located on the side of at least one first carrier layer facing away from the substrate, the multiple second functional layers include an active layer located on the side of at least one second carrier layer facing away from the substrate, the surface of the support structure facing away from the substrate is located on the side of the light-emitting layer facing away from the substrate, and / or the surface of the support structure facing away from the substrate is located on the side of the active layer facing away from the substrate.

[0029] According to an implementation of the first aspect of the present application, the material of the sacrificial structure is different from the material of the supporting structure.

[0030] According to an implementation of the first aspect of the present application, the sacrificial structure includes a metal material.

[0031] According to an embodiment of the first aspect of the present application, the sacrificial structure includes a metal oxide material.

[0032] According to an implementation of the first aspect of the present application, the sacrificial structure includes one or more materials selected from the group consisting of indium zinc oxide, indium gallium zinc oxide, and indium tin oxide.

[0033] According to an embodiment of the first aspect of the present application, the support structure includes an organic material.

[0034] According to an implementation of the first aspect of the present application, the orthographic projection of the sacrificial structure on the pixel definition layer is located between the first opening and the second opening.

[0035] According to an implementation of the first aspect of the present application, the orthographic projection of the support structure on the pixel definition layer does not overlap with the first opening, and the orthographic projection of the support structure on the pixel definition layer does not overlap with the second opening.

[0036] According to an implementation of the first aspect of the present application, the orthographic projection area of ​​a surface of the support structure facing away from the substrate on the substrate is smaller than the orthographic projection area of ​​a surface of the support structure close to the substrate on the substrate.

[0037] According to an embodiment of the first aspect of the present application, an orthographic projection of a surface of the support structure facing away from the substrate on the substrate is located within an orthographic projection of a surface of the support structure close to the substrate on the substrate.

[0038] According to an implementation of the first aspect of the present application, the orthographic projection area of ​​the surface of the sacrificial structure facing away from the substrate on the substrate is larger than the orthographic projection area of ​​the surface of the sacrificial structure close to the substrate on the substrate;

[0039] According to an embodiment of the first aspect of the present application, the orthographic projection of a surface of the sacrificial structure close to the substrate on the substrate is located within the orthographic projection of a surface of the sacrificial structure away from the substrate on the substrate.

[0040] According to an embodiment of the first aspect of the present application, the light emitting unit further includes a third electrode, and the photoelectric sensing unit includes a fourth electrode, wherein:

[0041] A portion of the third electrode is disposed between the substrate and the pixel definition layer, and another portion of the third electrode is disposed between the plurality of first functional layers and the substrate;

[0042] The fourth electrode is spaced apart from the third electrode, a portion of the fourth electrode is disposed between the substrate and the pixel definition layer, and another portion of the fourth electrode is disposed between the plurality of second functional layers and the substrate;

[0043] The voltage of the first electrode is equal to the voltage of the second electrode, the voltage of the first electrode is lower than the voltage of the third electrode, and the voltage of the first electrode is higher than the voltage of the fourth electrode.

[0044] According to an implementation of the first aspect of the present application, the sacrificial structure and the corresponding supporting structure enclose a third opening, and the third opening is connected to the second opening.

[0045] According to an implementation of the first aspect of the present application, an orthographic projection of the support structure on the substrate surrounds an orthographic projection of the corresponding at least one second carrier layer on the substrate.

[0046] According to an implementation of the first aspect of the present application, the orthographic projection of the second opening on the substrate is located within the orthographic projection of the third opening on the substrate.

[0047] According to an implementation scheme of the first aspect of the present application, the multiple second functional layers include an active layer located on the side of at least one second carrier layer facing away from the substrate, and the sacrificial structure and the corresponding supporting structure are arranged around the corresponding active layer and have a notch portion exposing the corresponding active layer in a direction parallel to the substrate.

[0048] According to an embodiment of the first aspect of the present application, a plurality of light-emitting units include a first light-emitting unit and a second light-emitting unit adjacent to the corresponding photoelectric sensing unit, at least a portion of at least one first carrier layer in the first light-emitting unit and at least a portion of at least one second carrier layer in the photoelectric sensing unit are located on both sides of the corresponding sacrificial structure, and at least a portion of at least one first carrier layer in the second light-emitting unit and at least a portion of at least one second carrier layer in the photoelectric sensing unit are connected via a notch portion.

[0049] According to an implementation of the first aspect of the present application, the first light-emitting unit is used to emit a first color light, and the second light-emitting unit is used to emit a second color light, and the wavelength of the first color light is different from the wavelength of the second color light.

[0050] According to an implementation of the first aspect of the present application, the photoelectric sensing unit is used to generate a first electrical signal according to the received first color light.

[0051] According to an implementation of the first aspect of the present application, the first light-emitting unit is used to emit green light or red light, and the second light-emitting unit is used to emit blue light.

[0052] According to an embodiment of the first aspect of the present application, the plurality of light-emitting units include a first light-emitting unit for emitting a first color light, a second light-emitting unit for emitting a second color light, and a third light-emitting unit for emitting a third color light.

[0053] The first light emitting unit and the third light emitting unit are alternately arranged along the second direction to form a first device group, the second light emitting unit and the photoelectric sensing unit are alternately arranged along the second direction to form a second device group, the first device group and the second device group are alternately arranged along the third direction, and the second direction and the third direction intersect.

[0054] According to an implementation of the first aspect of the present application, a photoelectric sensing unit is disposed between the first light-emitting units in adjacent first device groups.

[0055] According to the implementation scheme of the first aspect of the present application, the sacrificial structure and the corresponding supporting structure are arranged around the periphery of the photoelectric sensing unit, and the sacrificial structure and the corresponding supporting structure include a first isolation wall, a second isolation wall, a third isolation wall and a fourth isolation wall connected end to end, the first isolation wall and the third isolation wall are arranged on opposite sides of the photoelectric sensing unit along the second direction, and the second isolation wall and the fourth isolation wall are arranged on opposite sides of the photoelectric sensing unit along the third direction.

[0056] According to an implementation of the first aspect of the present application, in the same sacrificial structure, the first isolation wall, the second isolation wall, the third isolation wall and the fourth isolation wall form a ring surrounding the photoelectric sensing unit.

[0057] According to an embodiment of the first aspect of the present application, the first isolation wall has a notch portion, and at least a portion of at least one first carrier layer in the second light-emitting unit and at least a portion of at least one second carrier layer in the photoelectric sensing unit are connected through the notch portion.

[0058] According to an embodiment of the first aspect of the present application, the plurality of light-emitting units include a first light-emitting unit for emitting a first color light, a second light-emitting unit for emitting a second color light, and a third light-emitting unit for emitting a third color light.

[0059] A plurality of first light-emitting units are alternately arranged along the second direction to form a third device group, a plurality of photoelectric sensing units are arranged along the second direction to form a fourth device group, the second light-emitting units and the third light-emitting units are arranged along the second direction to form a fifth device group, the third device group, the fourth device group and the fifth device group are alternately arranged along the third direction, and the second direction and the third direction intersect.

[0060] According to an implementation of the first aspect of the present application, a plurality of photoelectric sensing units include a first sensing unit, which is arranged along a fourth direction between a first light-emitting unit in an adjacent third device group and a second light-emitting unit in a fifth device group, and the second direction, the third direction and the fourth direction intersect in the same plane.

[0061] According to an implementation of the first aspect of the present application, the plurality of photoelectric sensing units include a second sensing unit, which is arranged along a fourth direction between a first light-emitting unit in an adjacent first device group and a third light-emitting unit in a fifth device group, and the second direction, the third direction and the fourth direction intersect in the same plane.

[0062] According to the implementation scheme of the first aspect of the present application, the sacrificial structure and the corresponding supporting structure are arranged around the periphery of the photoelectric sensing unit, and the sacrificial structure and the corresponding supporting structure include a first isolation wall, a second isolation wall, a third isolation wall and a fourth isolation wall connected end to end, the first isolation wall and the third isolation wall are arranged on opposite sides of the photoelectric sensing unit along a fourth direction, the second isolation wall and the fourth isolation wall are arranged on opposite sides of the photoelectric sensing unit along a fifth direction, and the second direction, the third direction, the fourth direction and the fifth direction intersect in the same plane.

[0063] According to an implementation of the first aspect of the present application, in the same sacrificial structure, the first isolation wall, the second isolation wall, the third isolation wall and the fourth isolation wall form a ring surrounding the photoelectric sensing unit.

[0064] According to an embodiment of the first aspect of the present application, at least part of the first isolation wall has a notch portion, and at least part of at least one first carrier layer in the second light-emitting unit and at least part of at least one second carrier layer in the photoelectric sensing unit are connected through the notch portion.

[0065] According to the implementation of the first aspect of the present application, at least part of the first isolation wall has a notch portion, and at least part of at least one first carrier layer in the third light-emitting unit and at least part of at least one second carrier layer in the photoelectric sensing unit are connected through the notch portion.

[0066] According to the implementation of the first aspect of the present application, it also includes:

[0067] The first encapsulation layer is arranged on the side of the first electrode and the second electrode connected in an integral manner away from the substrate. The first encapsulation layer includes a first sublayer, a second sublayer and a third sublayer stacked in sequence along a direction away from the substrate. The first sublayer and the third sublayer include silicon oxynitride material, and the second sublayer includes an organic glue material.

[0068] According to an implementation of the first aspect of the present application, the display panel further includes a second encapsulation layer disposed on a side of the first encapsulation layer facing away from the substrate, and the second encapsulation layer includes an inorganic material.

[0069] According to an implementation of the first aspect of the present application, in a first direction perpendicular to the substrate, the thickness of the sacrificial structure is not less than the thickness of at least one first carrier layer, and / or the thickness of the sacrificial structure is not less than the thickness of at least one second carrier layer.

[0070] The embodiment of the second aspect of the present application further provides a display panel, including:

[0071] substrate;

[0072] A pixel definition layer is disposed on one side of the substrate, the pixel definition layer includes a plurality of first openings and a plurality of second openings, at least some of the first openings and at least some of the second openings are adjacent to each other;

[0073] The light-emitting device layer includes a plurality of light-emitting units, parts of the light-emitting units are arranged in the corresponding first openings, and the light-emitting units include a plurality of first functional layers arranged in a stacked manner;

[0074] The photoelectric sensor device layer includes a plurality of photoelectric sensor units, parts of the photoelectric sensor units are arranged in the corresponding second openings, and the photoelectric sensor units include a plurality of second functional layers arranged in a stacked manner;

[0075] The first isolation layer is disposed on a side of the pixel definition layer away from the substrate.

[0076] a second isolation layer, disposed between the first isolation layer and the pixel definition layer, wherein an orthographic projection of the second isolation layer on the substrate is located within an orthographic projection of the first isolation layer on the substrate, and at least a portion of at least one first functional layer in the light emitting unit and at least a portion of at least one second functional layer in the adjacent photoelectric sensing unit are separated by the second isolation layer;

[0077] Wherein, in a first direction perpendicular to the substrate, the second isolation layer has a first thickness, the first isolation layer has a second thickness, and the first thickness is smaller than the second thickness.

[0078] The third aspect of the present application also provides a method for preparing a display panel, including:

[0079] providing a substrate;

[0080] A pixel definition layer is disposed on one side of the substrate, wherein the pixel definition layer includes a plurality of first openings and a plurality of second openings, and at least some of the first openings and at least some of the second openings are adjacent to each other;

[0081] sequentially disposing an isolation material layer and a support material layer on a side of the pixel definition layer facing away from the substrate;

[0082] performing patterning on the support material layer to obtain a plurality of support structures;

[0083] Performing patterning on the isolation material layer to obtain a plurality of sacrificial structures, wherein the sacrificial structures are disposed between the support structure and the pixel definition layer, wherein the orthographic projections of the sacrificial structures on the substrate are located within the orthographic projections of the support structure on the substrate, and the orthographic projections of the sacrificial structures on the pixel definition layer are located at least between adjacent first openings and second openings;

[0084] A first material is disposed on one side of the substrate, part of the first material breaks at the edge of the supporting structure and falls into the first opening to form a first carrier layer of the light-emitting unit, part of the first material breaks at the edge of the supporting structure and falls into the second opening to form a second carrier layer of the photoelectric sensing unit, at least part of at least one first carrier layer in the light-emitting unit and at least part of at least one second carrier layer in the adjacent photoelectric sensing unit are located on both sides of the corresponding sacrificial structure and are spaced apart from the sacrificial structure.

[0085] According to an implementation of the second aspect of the present application, the isolation material layer is patterned to obtain a plurality of sacrificial structures, including:

[0086] Using the support structure as a mask, etching the isolation material layer to obtain a plurality of sacrificial structures;

[0087] According to the implementation of the first aspect of the present application, after patterning the isolation material layer to obtain a plurality of sacrificial structures, the method includes:

[0088] Taking a preset mask, placing the substrate and the mask relative to each other so that the support structure is supported on the preset mask, the mask having patterned light-transmitting holes;

[0089] The third material is evaporated by using a preset mask to form a light-emitting layer of the light-emitting unit located in the first opening.

[0090] Alternatively, a fourth material is evaporated using a preset mask to form an active layer of the photoelectric sensing unit located in the second opening.

[0091] The fourth aspect of the present application further provides a display device, including:

[0092] A display panel as provided in the first aspect or the second aspect, or a display panel prepared by the method for preparing a display panel as provided in the third aspect.

[0093] In the display panel, the method for preparing the display panel and the display device provided in the embodiments of the present application, the orthographic projection of the sacrificial structure on the substrate is arranged to be located within the orthographic projection of the supporting structure on the substrate, so that the first carrier layer and the second carrier layer separated by the sacrificial structure can be prepared without using a mask having a specific pattern, thereby avoiding or reducing the transmission of carriers between the first carrier layer and the second carrier layer, and improving the signal-to-noise ratio of the electrical signal generated by the photoelectric sensing unit; in the process of preparing the display panel, the supporting structure can not only be supported between the mask and the substrate, but also serve as a shield for preparing the first carrier layer and the second carrier layer, thereby realizing multiple uses of the supporting structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0094] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments of the present application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0095] Figure 1 is a schematic diagram of a partial cross-sectional structure of a display panel provided in some embodiments of the present application;

[0096] Figure 2 is a schematic diagram of a partial cross-sectional structure of a display panel provided in some embodiments of the present application;

[0097] Figure 3 is a partial planar structural schematic diagram of a display panel provided in some embodiments of the present application;

[0098] Figure 4 is a schematic diagram of a partial cross-sectional structure of a display panel provided in some embodiments of the present application;

[0099] Figure 5 is a partial planar structural schematic diagram of a display panel provided in some embodiments of the present application;

[0100] Figure 6 is a partial planar structural schematic diagram of a display panel provided in some embodiments of the present application;

[0101] Figure 7 is a partial planar structural schematic diagram of a display panel provided in some embodiments of the present application;

[0102] Figure 8 is a partial planar structural schematic diagram of a display panel provided in some embodiments of the present application;

[0103] Fig. 9 is a schematic diagram of a preparation process of a method for preparing a display panel provided in some embodiments of the present application;

[0104] Fig.10 is a schematic diagram of a preparation process of a method for preparing a display panel provided in some embodiments of the present application;

[0105] Fig.11 It is a schematic diagram of the preparation process of the display panel preparation method provided in some embodiments of the present application.

[0106] Description of reference numerals:

[0107] 200. Preset mask;

[0108] 1. substrate; 11. underlay; 12. driving circuit layer;

[0109] 2. pixel definition layer; 21. first opening; 22. second opening; 23. first surface;

[0110] 3. Light-emitting device layer; 31. Light-emitting unit; 31a. First light-emitting unit; 31b. Second light-emitting unit; 31c. Third light-emitting unit; 32. First device group; 33. Second device group; 34. Third device group; 35. Fifth device group; 36. Fourth device group; 310. First carrier layer; 311. First hole injection layer; 312. First hole transport layer; 313. Light-emitting layer; 314. First electron injection layer; 315. First electron transport layer; 316. First electrode; 317. Third electrode; 320. Third carrier layer;

[0111] 4, photoelectric sensor device layer; 41, photoelectric sensor unit; 41a, first sensing unit; 41b, second sensing unit; 410, second carrier layer; 411, second hole injection layer; 412, second hole transport layer; 413, active layer; 414, second electron injection layer; 415, second electron transport layer; 416, second electrode; 417, fourth electrode; 420, fourth carrier layer;

[0112] 5. Support structure; 51. Third opening; 52. Notch;

[0113] 6. Sacrificial structure; 61. First isolation wall; 62. Second isolation wall; 63. Third isolation wall; 64. Fourth isolation wall;

[0114] 7, first encapsulation layer; 71, first sublayer; 72, second sublayer; 73, third sublayer;

[0115] X, first direction; Y, second direction; Z, third direction; P, fourth direction; Q, fifth direction. DETAILED DESCRIPTION

[0116] In order to make the objectives, technical solutions and advantages of the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0117] In the related art, a light-emitting unit and a photoelectric sensing unit are provided in the display panel, so that light is displayed through the light-emitting unit and photoelectric conversion is realized through the photoelectric sensing unit. In order to simplify the preparation steps, some functional layers in the photoelectric sensing unit and some functional layers in the light-emitting unit are prepared together to form a common functional layer. The carriers in the light-emitting unit can be transmitted to the photoelectric sensing unit through the common functional layer, thereby affecting the signal-to-noise ratio of the electrical signal generated by the photoelectric conversion of the photoelectric sensing unit.

[0118] To solve the above problems, embodiments of the present application provide a display panel, a method for manufacturing a display panel, and a display device. Embodiments of the display panel, a method for manufacturing a display panel, and a display device will be described below in conjunction with the accompanying drawings.

[0119] In a first aspect, the present application provides a display panel, such as Figure 1 and Figure 2 As shown, a display panel includes a substrate 1, a pixel definition layer 2, a light-emitting device layer 3, a photoelectric sensor device layer 4, a plurality of support structures 5 and a plurality of sacrificial structures 6, wherein the pixel definition layer 2 is arranged on one side of the substrate 1, and the pixel definition layer 2 includes a plurality of first openings 21 and a plurality of second openings 22, and at least part of the first openings 21 and at least part of the second openings 22 are adjacent; the light-emitting device layer 3 includes a plurality of light-emitting units 31, and a portion of the light-emitting unit 31 is arranged in the corresponding first opening 21, and the light-emitting unit 31 includes a plurality of first functional layers stacked, and the plurality of first functional layers include at least one first carrier layer 310; the photoelectric sensor device layer 4 includes a plurality of photoelectric sensing units 41, Part of the photoelectric sensing unit 41 is arranged in the corresponding second opening 22, and the photoelectric sensing unit 41 includes a plurality of second functional layers stacked together, and the plurality of second functional layers include at least one second carrier layer 410; the sacrificial structure 6 is arranged on the side of the pixel definition layer 2 away from the substrate 1, and the supporting structure 5 is arranged on the side of the corresponding sacrificial structure 6 away from the pixel definition layer 2, and the orthographic projection of the sacrificial structure 6 on the substrate 1 is located within the orthographic projection of the supporting structure 5 on the substrate 1, and at least a portion of at least one first carrier layer 310 in the light-emitting unit 31 and at least a portion of at least one second carrier layer 410 in the adjacent photoelectric sensing unit 41 are located on both sides of the corresponding sacrificial structure 6.

[0120] In the display panel provided in the embodiment of the present application, the substrate 1 can not only provide support for the pixel definition layer 2, but also provide electrical signals for the light-emitting device layer 3 and the photoelectric sensor device layer 4. There are many ways to set the substrate 1. In some embodiments, the substrate 1 may include a substrate 11 and a driving circuit layer 12 arranged on the substrate 11, and the driving circuit layer 12 may include a pixel driving circuit, a plurality of conductive connection structures arranged in a stacked manner, and the like. Exemplarily, the pixel driving circuit arranged in the driving circuit layer 12 includes a transistor and a storage capacitor. The transistor includes an active layer, a gate, a drain and a source. The storage capacitor includes a first plate and a second plate.

[0121] The plurality of first openings 21 and the plurality of second openings 22 in the pixel definition layer 2 may be formed together. Part of the circuit on the substrate 1 may be exposed from the first opening 21 and the second opening 22, so that the light emitting unit 31 subsequently prepared in the first opening 21 may be connected to the circuit in the substrate 1 through the exposed portion, and the photoelectric sensing unit 41 subsequently prepared in the second opening 22 may be connected to the circuit in the substrate 1 through the exposed portion. The pixel definition layer 2 may limit the setting range of the light emitting unit 31 and the photoelectric sensing unit 41.

[0122] The number of the first openings 21 may be the same as the number of the light-emitting units 31, and the first openings 21 are arranged in a one-to-one correspondence with the light-emitting units 31. The plurality of light-emitting units 31 may be light-emitting units 31 capable of emitting light of different colors, respectively. For example, it may be a red light-emitting unit capable of emitting red light, a green light-emitting unit capable of emitting green light, and a blue light-emitting unit capable of emitting blue light. A plurality of red light-emitting units, a plurality of green light-emitting units, and a plurality of blue light-emitting units are arranged in a preset rule to have different display effects. The light-emitting unit 31 includes a plurality of first functional layers stacked in layers, and the plurality of first functional layers may be a hole injection layer (HIL), a hole transport layer (HTL), a light-emitting layer 313 (EML), an electron transport layer (ETL), and an electron injection layer (EIL) in sequence.

[0123] The number of the second openings 22 can be the same as the number of the photoelectric sensing units 41, and the second openings 22 are arranged in a one-to-one correspondence with the photoelectric sensing units 41. The photoelectric sensing unit 41, as a photosensitive element, can convert an optical signal into an electrical signal. A plurality of photoelectric sensing units 41 can be used to receive light of the same color and generate an electrical signal, and a plurality of photoelectric sensing units 41 can also include photoelectric sensing units 41 for receiving light of different colors. For example, it can be a red photoelectric sensing unit capable of receiving red light, and a green photoelectric sensing unit capable of receiving green light. The photoelectric sensing unit 41 includes a plurality of second functional layers stacked together, and the plurality of second functional layers can be a hole injection layer (HIL), a hole transport layer (HTL), an active layer 413, an electron transport layer (ETL), and an electron injection layer (EIL) in sequence.

[0124] The photoelectric sensing unit 41 is electrically connected to the processing chip to send the changed electrical signal to the processing chip, and the processing chip can generate biological information based on the electrical signal generated by the photoelectric sensing unit 41. The photoelectric sensing unit 41 can be used to collect biological information, and the biological information is not limited to fingerprints, skin health, pulse, and blood oxygen concentration. Skin health can include quantitative detection of black spots, brown spots, pores, wrinkles, bumps, vascular lesions, oil secretion, acne, and sun damage.

[0125] The plurality of photoelectric sensing units 41 can be evenly distributed in the display area of ​​the display panel, so that the user can collect the user's biological information by touching any area of ​​the display area. The plurality of photoelectric sensing units 41 can also be set only in the first display area of ​​the display panel, and the user can collect the user's biological information by touching the first display area. More light-emitting units 31 can be set in the second display area other than the first display area to improve the display effect of the second display area.

[0126] The support structure 5 is disposed on the side of the pixel definition layer 2 facing away from the substrate 1, and a plurality of support structures 5 may be distributed on the pixel definition layer 2. During the process of preparing the display panel, the support structure 5 may be supported between the mask and the substrate 1 to fix the distance between the mask and the substrate 1 to prevent the mask and the substrate 1 from contacting and scratching each other.

[0127] The sacrificial structure 6 is arranged between the support structure 5 and the pixel definition layer 2, so that by adjusting the thickness of the sacrificial structure 6, the distance from the support structure 5 to the pixel definition layer 2 can be adjusted, thereby adjusting the distance between the mask and the substrate 1 during the display panel preparation process. The orthographic projection of the sacrificial structure 6 on the substrate 1 is located within the orthographic projection of the support structure 5 on the substrate 1, that is, the support structure 5 has a larger projection area than the sacrificial structure 6, and the support structure 5 blocks the sacrificial structure 6 from the side away from the substrate 1, so that when evaporating and spraying materials onto the substrate 1, the material has a large drop at the edge of the support structure 5, and the material falling into the first opening 21 and the second opening 22 and the material falling on the support structure 5 are difficult to connect, so that they are broken, forming material layers arranged at intervals on both sides of the sacrificial structure 6 and a material layer falling on the support structure 5. In the present application, the first carrier layer 310 in the light emitting unit 31 and the second carrier layer 410 in the photoelectric sensing unit 41 can be prepared by the supporting structure 5 and the sacrificial structure 6 and the aforementioned method, so that at least part of the first carrier layer 310 in the light emitting unit 31 on one side of the sacrificial structure 6 and at least part of the second carrier layer 410 in the photoelectric sensing unit 41 on the other side are arranged in an interval. The first carrier layer 310 and the second carrier layer 410 are isolated by the sacrificial structure 6, thereby avoiding or reducing the transmission of carriers between the first carrier layer 310 and the second carrier layer 410. The carrier layer can generate and transmit a layer structure of carriers, and the carriers can be holes or electrons.

[0128] In the present application, the orthographic projection on the substrate 1 may be a projection on the substrate 1 along a first direction X, where the first direction X may be a thickness direction of the display panel, a direction from the substrate 1 to the light-emitting device layer 3, or a direction perpendicular to a reference plane where the substrate 1 is located.

[0129] In this embodiment, by setting the orthographic projection of the sacrificial structure 6 on the substrate 1 to be located within the orthographic projection of the supporting structure 5 on the substrate 1, the first carrier layer 310 and the second carrier layer 410 separated by the sacrificial structure 6 can be prepared without using a mask having a specific pattern, thereby avoiding or reducing the transmission of carriers between the first carrier layer 310 and the second carrier layer 410, and improving the signal-to-noise ratio of the electrical signal generated by the photoelectric sensing unit 41; in the process of preparing the display panel, the supporting structure 5 can not only be supported between the mask and the substrate 1, but also serve as a shield for preparing the first carrier layer 310 and the second carrier layer 410, thereby realizing multiple uses of the supporting structure 5.

[0130] In some embodiments, at least one first carrier layer 310 includes a first hole injection layer 311 and a first hole transport layer 312, and the first hole injection layer 311 is located on a side of the first hole transport layer 312 close to the substrate 1; at least one second carrier layer 410 includes a second hole injection layer 411 and a second hole transport layer 412, and the second hole injection layer 411 is located on a side of the second hole transport layer 412 close to the substrate 1; the first hole injection layer 311 in the light-emitting unit 31 and the second hole injection layer 411 in the adjacent photoelectric sensing unit 41 are located on both sides of the corresponding sacrificial structure 6, and / or the first hole transport layer 312 in the light-emitting unit 31 and the second hole transport layer 412 in the adjacent photoelectric sensing unit 41 are located on both sides of the corresponding sacrificial structure 6.

[0131] When the first hole injection layer 311 and the second hole injection layer 411 are connected to form a common layer, the holes in the working light-emitting unit 31 can be transmitted to the second hole injection layer 411, causing the electrical signal in the photoelectric sensor device layer 4 to change. In this embodiment, the first hole injection layer 311 in the light-emitting unit 31 and the second hole injection layer 411 in the adjacent photoelectric sensor unit 41 are located on both sides of the sacrificial structure 6, so that the transmission of holes between the first hole injection layer 311 and the second hole injection layer 411 is avoided or reduced.

[0132] When the first hole transport layer 312 and the second hole transport layer 412 are connected to form a common layer, the holes in the working light-emitting unit 31 can be transferred to the second hole transport layer 412, causing the electrical signal in the photoelectric sensor device layer 4 to change. In this embodiment, the first hole transport layer 312 in the light-emitting unit 31 and the second hole transport layer 412 in the adjacent photoelectric sensor unit 41 are located on both sides of the corresponding sacrificial structure 6, so that the transmission of holes between the first hole transport layer 312 and the second hole transport layer 412 is avoided or reduced.

[0133] In adjacent light-emitting units 31 and photoelectric sensing units 41, only the first hole injection layer 311 and the second hole injection layer 411 may be separated by the sacrificial structure 6, or only the first hole transport layer 312 and the second hole transport layer 412 may be separated by the sacrificial structure 6, or the first hole injection layer 311 and the second hole injection layer 411 may be separated by the sacrificial structure 6, and the first hole transport layer 312 and the second hole transport layer 412 may be separated by the sacrificial structure 6.

[0134] In some embodiments, the pixel definition layer 2 has a first surface 23 facing away from the substrate 1, the sacrificial structure 6 is disposed on the first surface 23, at least one first carrier layer 310 extends from the first opening 21 to the first surface 23, and the second carrier layer 410 extends from the second opening 22 to the first surface 23.

[0135] The material for preparing the sacrificial structure 6 can be laid on the first surface 23, and the sacrificial structure 6 of the desired structure can be prepared by an etching process. The material for preparing the first carrier layer 310 and the second carrier layer 410 can not only fall into the first opening 21 to form the part of the first carrier layer 310 located in the first opening 21, and fall into the second opening 22 to form the part of the second carrier layer 410 located in the second opening 22, but can also fall in the area of ​​the first surface 23 that is not blocked by the support structure 5, forming the first carrier layer 310 extending from the first opening 21 to the first surface 23, and the second carrier layer 410 extending from the second opening 22 to the first surface 23, thereby increasing the area of ​​the first carrier layer 310 and the second carrier layer 410.

[0136] When the first hole injection layer 311 and the second hole injection layer 411 are separated by the sacrificial structure 6, and the first hole transport layer 312 and the second hole transport layer 412 are separated by the sacrificial structure 6, the edge of the first hole injection layer 311 and the edge of the second hole injection layer 411 both extend to the first surface 23, the first hole transport layer 312 is stacked on the first hole injection layer 311 and extends along the first hole injection layer 311 to the first surface 23, and the second hole transport layer 412 is stacked on the second hole injection layer 411 and extends along the second hole injection layer 411 to the first surface 23.

[0137] In some embodiments, the sacrificial structure 6 is spaced apart from at least a portion of the first carrier layer 310 in the corresponding light emitting unit 31 and at least a portion of the second carrier layer 410 in the photoelectric sensing unit 41 .

[0138] By adjusting the distance that the support structure 5 extends relative to the sacrificial structure 6, the material layer falling in the first opening 21 and the second opening 22 can be overlapped or spaced with the sacrificial structure 6. For example, if the distance that the support structure 5 extends relative to the sacrificial structure 6 is x, and the material layer falling in the first opening 21 and the second opening 22 overlaps with the sacrificial structure 6, then increasing the value of x can achieve that the material layer falling in the first opening 21 and the second opening 22 is spaced from the sacrificial structure 6. The first carrier layer 310 and the second carrier layer 410 are spaced from the sacrificial structure 6, respectively, to avoid or reduce the transmission of carriers between the first carrier layer 310 and the second carrier layer 410 through the sacrificial structure 6.

[0139] In some embodiments, at least one first carrier layer 310 in adjacent light emitting units 31 is an integrated structure.

[0140] At least one first carrier layer 310 in adjacent light-emitting units 31 can be prepared together to form a common integrated structure, so that only the sacrificial structure 6 needs to be set for the photoelectric sensor unit 41, reducing the distribution area and density of the sacrificial structure 6 in the display panel.

[0141] In some embodiments, the light-emitting unit 31 includes a first electrode 316, which is disposed on a side of the multiple first functional layers away from the substrate 1, and the photoelectric sensing unit 41 includes a second electrode 416, which is disposed on a side of the multiple second functional layers away from the substrate 1, and the first electrode and the second electrode are an integrated structure.

[0142] The first electrode 316 and the second electrode 416 can be laid on the entire display area of ​​the display panel. The first electrode 316 and the second electrode 416 of the integrated structure can provide the same electrical signal to each light-emitting unit 31 and each photoelectric sensing unit 41, thereby simplifying the circuit design for controlling the light-emitting unit 31 and the photoelectric sensing unit 41. At least part of the first electrode 316 and at least part of the second electrode 416 are located on the side of the support structure 5 away from the substrate 1, so as to realize the electrical connection across the support structure 5 between the part of the first electrode 316 located on the side of the light-emitting unit 31 and the part of the second electrode 416 located on the side of the photoelectric sensing unit 41.

[0143] In some embodiments, the multiple first functional layers include a light-emitting layer 313 and at least one third carrier layer 320 stacked in sequence on at least one first carrier layer 310, and the multiple second functional layers include an active layer 413 and at least one fourth carrier layer 420 stacked in sequence on at least one second carrier layer 410; at least one third carrier layer 320 in the light-emitting unit 31 and at least one fourth carrier layer 420 in the adjacent photoelectric sensing unit 41 extend to the side of the corresponding supporting structure 5 away from the substrate 1 and are connected as an integrated unit.

[0144] The third carrier layer 320 is different from the first carrier layer 310, and the fourth carrier layer 420 is different from the second carrier layer 410. The integrated third carrier layer 320 and the fourth carrier layer 420 can not only be prepared by the same material, but also can be prepared simultaneously. For example, the materials used to form the third carrier layer 320 and the fourth carrier layer 420 are laid together in the display area of ​​the display panel.

[0145] The third carrier layer 320 in the adjacent light emitting unit 31 and the fourth carrier layer 420 in the photoelectric sensing unit 41 are connected across the support structure 5 , which simplifies the preparation steps.

[0146] In some embodiments, at least one third carrier layer 320 includes a first electron injection layer 314 and a first electron transport layer 315, the first electron injection layer 314 is located on the side of the first electron transport layer 315 away from the substrate 1, and at least one fourth carrier layer 420 includes a second electron injection layer 414 and a second electron transport layer 415, the second electron injection layer 414 is located on the side of the second electron transport layer 415 away from the substrate 1, wherein the first electron injection layer 314 and the second electron injection layer 414 extend to the side of the corresponding support structure 5 away from the substrate 1 and are connected as an integral body.

[0147] In adjacent light emitting units 31 and photoelectric sensing units 41 , only the first electron injection layer 314 and the second electron injection layer 414 may form a common integrated structure to simplify the manufacturing steps.

[0148] In some embodiments, the first electron transport layer 315 and the second electron transport layer 415 extend to a side of the corresponding support structure 5 facing away from the substrate 1 and are connected to form an integrated structure.

[0149] The first electron injection layer 314 and the second electron injection layer 414 may also be formed into a common integrated structure to simplify the preparation steps.

[0150] In some embodiments, in a first direction X perpendicular to the substrate 1 , the sacrificial structure 6 has a first thickness H1 , and the supporting structure 5 has a second thickness H2 , and the first thickness H1 is smaller than the second thickness H2 .

[0151] In the process of preparing the display panel, the support structure 5 can be used as a mask and a photoresist on the material layer for preparing the sacrificial structure 6, and the sacrificial structure 6 located on one side of the support structure 5 is etched. The thickness H2 of the support structure 5 is greater than the thickness H1 of the sacrificial structure 6, thereby reducing the etching time of the sacrificial structure 6 and reducing the damage to the support structure 5 during the process of preparing the sacrificial structure 6.

[0152] The total thickness of the support structure 5 and the sacrificial structure 6 along the first direction X determines the distance between the mask and the substrate 1 during the process of manufacturing the display panel. Increasing the thickness of either the support structure 5 or the sacrificial structure 6 can increase the distance between the mask and the substrate 1; reducing the thickness of either the support structure 5 or the sacrificial structure 6 can reduce the distance between the mask and the substrate 1.

[0153] In some embodiments, the second thickness H2 is greater than or equal to 1000 nm, so that the support structure 5 has sufficient supporting strength as a spacer between the mask and the substrate 1 .

[0154] In some embodiments, the first thickness H1 is greater than or equal to 150 nm, so that the support structure 5 and the pixel definition layer 2 have a sufficient distance to separate the materials for preparing the first carrier layer 310 and the second carrier layer 410, forming spaced first carrier layers 310 and second carrier layers 410.

[0155] Optionally, the first thickness H1 is 150 nm, and the second thickness H2 is 1000 nm. The first thickness H1 is 200 nm, and the second thickness H2 is 1100 nm. The first thickness H1 is 250 nm, and the second thickness H2 is 1200 nm. The first thickness H1 is 300 nm, and the second thickness H2 is 1300 nm.

[0156] In some embodiments, the multiple first functional layers include a light-emitting layer 313 located on the side of at least one first carrier layer 310 facing away from the substrate 1, the multiple second functional layers include an active layer 413 located on the side of at least one second carrier layer 410 facing away from the substrate 1, the surface of the support structure 5 facing away from the substrate 1 is located on the side of the light-emitting layer 313 facing away from the substrate 1, and / or the surface of the support structure 5 facing away from the substrate 1 is located on the side of the active layer 413 facing away from the substrate 1.

[0157] The light emitting layer 313 may be at least partially located in the first opening 21, and the active layer 413 may be at least partially located in the second opening 22. The light emitting layer 313 and the active layer 413 are spaced on both sides of the sacrificial structure 6, or on both sides of the supporting structure 5, and may also be spaced by the pixel definition layer 2.

[0158] The light-emitting layer 313 and the active layer 413 can be prepared using masks with different patterns, respectively. The support structure 5 is in contact with the mask, and the materials for preparing the light-emitting layer 313 and the sensing layer can be evaporated into the first opening 21 and the second opening 22 through different masks based on the evaporation process. The first reference plane is set to be located on the side of the light-emitting layer 313 away from the substrate 1, and the side of the active layer 413 away from the substrate 1, so as to prevent the light-emitting layer 313 and the sensing layer prepared by evaporation from protruding in the direction away from the substrate 1 compared with the support structure 5, and ensure that the light-emitting layer 313 and the sensing layer form a pattern consistent with the mask.

[0159] In some embodiments, the sacrificial structure 6 is located between at least a portion of the first hole transport layer 312 in the adjacent light-emitting unit 31 and at least a portion of the second hole transport layer 412 in the photoelectric sensing unit 41, and the surface of the first hole transport layer 312 facing away from the substrate 1 is located on the side of the surface of the support structure 5 close to the substrate 1 close to the substrate 1, and the surface of the second hole transport layer 412 facing away from the substrate 1 is located on the side of the surface of the support structure 5 close to the substrate 1 close to the substrate 1, so that the materials for preparing the first hole transport layer 312 and the second hole transport layer 412 can be disconnected at the edge of the support structure 5 to avoid the formed first hole transport layer 312 and the second hole transport layer 412 being connected.

[0160] In some embodiments, the material of the sacrificial structure 6 and the material of the supporting structure 5 are different, so that the etching solution for wet etching can be selected according to the material of the sacrificial structure 6 and the material of the supporting structure 5. The previously prepared supporting structure 5 is used as a mask, and the material layer used to prepare the sacrificial structure 6 is etched by the etching solution without damaging or causing minimal damage to the prepared supporting structure 5.

[0161] In some embodiments, the sacrificial structure 6 includes a metal material. The sacrificial structure 6 is prepared by the metal material, so that an isolation material layer can be formed on one side of the substrate 1 based on chemical vapor deposition technology, and then the isolation material layer is patterned by wet etching to facilitate control of the preparation parameters and obtain a sacrificial structure 6 of the desired thickness.

[0162] The metal material may be indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium tin oxide (ITO), molybdenum (Mo), aluminum (Al), or copper (Cu).

[0163] In some embodiments, the sacrificial structure 6 includes a metal oxide material.

[0164] Compared with the sacrificial structure 6 made of a metal element, when the first carrier layer 310 and the second carrier layer 410 are in contact with the sacrificial structure 6 made of a metal oxide material, the carrier mobility of the sacrificial structure 6 made of a metal oxide material is lower, so that when the first carrier layer 310 and the second carrier layer 410 are in contact with the sacrificial structure 6 made of a metal oxide material, the carriers transmitted between the first carrier layer 310 and the second carrier layer 410 are less than those with the sacrificial structure 6 made of a metal element.

[0165] In some embodiments, the sacrificial structure 6 includes one or more materials selected from the group consisting of indium zinc oxide, indium gallium zinc oxide, and indium tin oxide.

[0166] In some embodiments, support structure 5 comprises an organic material.

[0167] The support structure 5 is made of an organic material, so that the support structure 5 having a sufficient thickness can be obtained.

[0168] Using organic materials to prepare the support structure 5 also makes the physical and chemical properties of the support structure 5 made of organic materials and the sacrificial structure 6 made of metal materials have greater differences, thereby facilitating the selection of an etching solution for wet etching to form the sacrificial structure 6 without damaging or with minimal damage to the prepared support structure 5.

[0169] In some embodiments, the orthographic projection of the sacrificial structure 6 on the pixel definition layer 2 is located between the first opening 21 and the second opening 22, so as to avoid the sacrificial structure 6 blocking the materials used to prepare the light-emitting unit 31 and the photoelectric sensing unit 41 from entering the first opening 21 or the second opening 22, thereby reducing or avoiding the sacrificial structure 6 blocking the light emitted outward by the light-emitting unit 31 and the light entering the photoelectric sensing unit 41.

[0170] In some embodiments, the orthographic projection of the support structure 5 on the pixel definition layer 2 does not overlap with the first opening 21, and the orthographic projection of the support structure 5 on the pixel definition layer 2 does not overlap with the second opening 22, so as to avoid the support structure 5 blocking the materials used to prepare the light-emitting unit 31 and the photoelectric sensing unit 41 from entering the first opening 21 or the second opening 22, and to avoid the support structure 5 blocking the light emitted outward by the light-emitting unit 31 and the light entering the photoelectric sensing unit 41.

[0171] In some embodiments, the orthographic projection area of ​​the surface of the support structure 5 facing away from the substrate 1 on the substrate 1 is smaller than the orthographic projection area of ​​the surface of the support structure 5 close to the substrate 1 on the substrate 1 .

[0172] The support structure 5 is larger at one end close to the substrate 1 and smaller at the end away from the substrate 1 , thereby reducing the contact area between the support structure 5 and the mask when the support structure 5 is supported between the mask and the substrate 1 , thereby improving the stability of the support structure 5 .

[0173] In some embodiments, the orthographic projection of the surface of the support structure 5 facing away from the substrate 1 on the substrate 1 is located within the orthographic projection of the surface of the support structure 5 close to the substrate 1 on the substrate 1 .

[0174] The cross-section of the support structure 5 can be a right trapezoid with the base facing the substrate 1. The orthographic projection of the surface of the support structure 5 facing away from the substrate 1 on the substrate 1 is arranged to be within the orthographic projection of the surface of the support structure 5 close to the substrate 1 on the substrate 1, so that the support structure 5 has a sloping surface, which is conducive to the material for preparing the carrier layer being disconnected at the edge of the support structure 5.

[0175] In some embodiments, the orthographic projection area of ​​the surface of the sacrificial structure 6 facing away from the substrate 1 on the substrate 1 is larger than the orthographic projection area of ​​the surface of the sacrificial structure 6 close to the substrate 1 on the substrate 1 .

[0176] When the prepared support structure 5 is used as a mask to wet-etch the isolation material layer to prepare the sacrificial structure 6, since one side of the isolation material layer is blocked by the support structure 5, only the area exposed to the support structure 5 can contact the etching solution, so that the prepared sacrificial structure 6 has a large end close to the support structure 5 and a small end away from the support structure 5. The sacrificial structure 6 has a small end close to the substrate 1, thereby avoiding or reducing the overlap of the first carrier layer 310 and the second carrier layer 410 with the end of the sacrificial structure 6 close to the substrate 1. The sacrificial structure 6 has a large end away from the substrate 1, which is conducive to the stable support of the sacrificial structure 6 between the support structure 5 and the pixel definition layer 2.

[0177] In some embodiments, the orthographic projection of the surface of the sacrificial structure 6 close to the substrate 1 on the substrate 1 is located within the orthographic projection of the surface of the sacrificial structure 6 facing away from the substrate 1 on the substrate 1 .

[0178] The cross-section of the sacrificial structure 6 can be a right trapezoid with the bottom side facing away from the substrate 1. The orthographic projection of the surface of the sacrificial structure 6 close to the substrate 1 on the substrate 1 is arranged to be located within the orthographic projection of the surface of the sacrificial structure 6 facing away from the substrate 1 on the substrate 1, so that the sacrificial structure 6 has a sloping surface, which is beneficial to spacing the first carrier layer 310 and / or the second carrier layer 410 from the sacrificial structure 6.

[0179] In some embodiments, the orthographic projection area of ​​the surface of the sacrificial structure 6 facing away from the substrate 1 on the substrate 1 is smaller than the orthographic projection area of ​​the surface of the support structure 5 close to the substrate 1 on the substrate 1. The support structure 5 is extended relative to the sacrificial structure 6 to limit the pattern of the first carrier layer 310 and the second carrier layer 410 through the support structure 5. The projection area of ​​the support structure 5 is larger than the projection area of ​​the sacrificial structure 6, and the sacrificial structure 6 is completely covered, and the sacrificial structure 6 is recessed relative to the support structure 5 in a direction away from the isolation opening.

[0180] In some embodiments, the light-emitting unit 31 includes a third electrode 317, and the photoelectric sensing unit 41 includes a fourth electrode 417, a portion of the third electrode 317 is arranged between the substrate 1 and the pixel definition layer 2, and another portion is arranged between the multiple first functional layers and the substrate 1; the fourth electrode 417 is arranged at intervals from the third electrode 317, a portion of the fourth electrode 417 is arranged between the substrate 1 and the pixel definition layer 2, and another portion is arranged between the multiple second functional layers and the substrate 1.

[0181] The voltage of the first electrode 316 is equal to the voltage of the second electrode 416 , the voltage of the first electrode 316 is lower than the voltage of the third electrode 317 , and the voltage of the first electrode 316 is higher than the voltage of the fourth electrode 417 .

[0182] The first electrode 316 is in contact with the first functional layer on the side close to the substrate 1, so that the first electrode 316 provides voltage to each light-emitting unit 31, and the first electrode 316, the light-emitting unit 31 and the third electrode 317 are stacked in sequence. The second electrode 416 is in contact with the second functional layer on the side close to the substrate 1, so that the second electrode 416 provides voltage to each photoelectric sensing unit 41, and the second electrode 416, the photoelectric sensing unit 41 and the fourth electrode 417 are stacked in sequence. One of the first electrode 316 and the third electrode 317 can be a cathode, and the other can be an anode. The first electrode 316 and the third electrode 317 are used together to drive the light-emitting unit 31 to emit light. One of the second electrode 416 and the fourth electrode 417 can be a cathode, and the other can be an anode. The second electrode 416 and the fourth electrode 417 are used together to drive the photoelectric sensing unit 41 to perform photoelectric conversion. Optionally, the first electrode 316 and the second electrode 416 are both cathodes, and the third electrode 317 and the fourth electrode 417 are both anodes.

[0183] The third electrode 317 and the fourth electrode 417 are arranged at intervals, so that the third electrode 317 and the fourth electrode 417 can be used as point electrodes to provide different electrical signals to the light-emitting unit 31 and the photoelectric sensing unit 41 respectively. Since the functions of the light-emitting unit 31 and the photoelectric sensing unit 41 are inconsistent, the voltages required by the two are also different. The voltage of the first electrode 316 is equal to the voltage of the second electrode 416, the voltage of the first electrode 316 is less than the voltage of the third electrode 317, and the voltage of the first electrode 316 is greater than the voltage of the fourth electrode 417. When the voltages of the first electrode 316 and the second electrode 416 are kept constant, the holes in the first carrier layer 310 move to the second carrier layer 410, which will cause the voltage of the fourth electrode 417 to increase, thereby reducing the voltage difference between the second electrode 416 and the fourth electrode 417, resulting in saturation of the photoelectric sensing unit 41 device, affecting the output electrical signal change. Therefore, isolating the first carrier layer 310 and the second carrier layer 410 can also reduce or avoid saturation of the photoelectric sensing unit 41 device.

[0184] In some embodiments, the pixel definition layer 2 is located between the adjacent third electrode 317 and the fourth electrode 417 , and the pixel definition layer 2 may be made of insulating material to avoid electrical connection between the third electrode 317 and the fourth electrode 417 .

[0185] First, the third electrode 317 and the fourth electrode 417 may be isolated from each other, and then a pixel definition material layer covering the third electrode 317 and the fourth electrode 417 may be prepared, and the pixel definition material layer may be patterned to form a first opening 21 exposing the third electrode 317 and a second opening 22 exposing the fourth electrode 417 .

[0186] Please refer to Figure 3 and Figure 4In some embodiments, the sacrificial structure 6 and the corresponding supporting structure 5 enclose a third opening 51 , and the third opening 51 is connected to the second opening 22 .

[0187] The overlapping sacrificial structure 6 and supporting structure 5 are the corresponding sacrificial structure 6 and supporting structure 5. The third opening 51 formed by enclosing can be independent of the first opening 21, so that the orthographic projection of the sacrificial structure 6 on the substrate 1 surrounds the photoelectric sensing unit 41. The sacrificial structure 6 may not be arranged between each light-emitting unit 31, that is, the first carrier layers 310 of adjacent light-emitting units 31 may be connected to form an integrated structure.

[0188] In some embodiments, an orthographic projection of the support structure 5 on the substrate 1 surrounds an orthographic projection of the corresponding at least one second carrier layer 410 on the substrate 1 .

[0189] The orthographic projection of the support structure 5 on the substrate 1 surrounds the orthographic projection of at least one second carrier layer 410 on the substrate 1, so that at least one second carrier layer 410 can be completely isolated from the first carrier layer 310 of the adjacent light-emitting unit 31, thereby improving the signal-to-noise ratio of the electrical signal output by the photoelectric sensor unit 41.

[0190] In some embodiments, the orthographic projection of the second opening 22 on the substrate 1 is located within the orthographic projection of the third opening 51 on the substrate 1 to increase the surface area of ​​the photoelectric sensor unit 41 facing away from the substrate 1 and increase the area of ​​the photoelectric sensor unit 41 receiving external light.

[0191] Please refer to Figure 1 , Figure 2 and Figure 6 In other embodiments, in some embodiments, the multiple second functional layers include an active layer 413 located on the side of at least one second carrier layer 410 away from the substrate 1, and the sacrificial structure 6 and the corresponding supporting structure 5 are arranged around the corresponding active layer 413 and have a notch portion 52 exposing the corresponding active layer 413 in a direction parallel to the substrate 1.

[0192] When the sacrificial structure 6 and the supporting structure 5 are arranged on one side of the pixel definition layer 2, since the sacrificial structure 6 and the supporting structure 5 are protruded in the direction away from the substrate 1 compared with the pixel definition layer 2, when the first electrode 316 and the second electrode 416 are arranged on the entire surface, the material used to prepare the first electrode 316 and the second electrode 416 adapts to the undulating pixel definition layer 2, the sacrificial structure 6 and the supporting structure 5, and part of the prepared material may be broken at the edge of the supporting structure 5, causing partial circuit breakage in the first electrode 316 and the second electrode 416. By providing the notch 52, the notch 52 can provide a flatter surface to form the first electrode 316 and the second electrode 416 compared with the supporting structure 5 and the sacrificial structure 6, and the prepared material can fall into the notch 52 to form the connected first electrode 316 and the second electrode 416.

[0193] The notch 52 exposes the corresponding active layer 413 in a direction parallel to the substrate 1 , which is beneficial for preparing the material to be spread on the side of the active layer 413 facing away from the substrate 1 at the notch 52 .

[0194] Optionally, part of the first electrode 316 and part of the second electrode 416 are located on a side of the support structure 5 facing away from the substrate 1 , and another part of the first electrode 316 and another part of the second electrode 416 are connected in the notch 52 , thereby improving the stability of the electrical connection between the first electrode 316 and the second electrode 416 .

[0195] Optionally, the sacrificial structure 6 is an annular retaining wall structure surrounding the active layer 413 , and a notch 52 is provided on the retaining wall structure to connect two opposite sides.

[0196] In some embodiments, the plurality of light-emitting units 31 include a first light-emitting unit 31a and a second light-emitting unit 31b adjacent to the corresponding photoelectric sensing unit 41, at least a portion of at least one first carrier layer 310 in the first light-emitting unit 31a and at least a portion of at least one second carrier layer 410 in the photoelectric sensing unit 41 are located on both sides of the corresponding sacrificial structure 6, and at least a portion of at least one first carrier layer 310 in the second light-emitting unit 31b and at least a portion of at least one second carrier layer 410 in the photoelectric sensing unit 41 are connected via a notch portion 52.

[0197] At least one first carrier layer 310 and at least one second carrier layer 410 connected in the notch 52 may be the aforementioned first electron injection layer 314 and second electron injection layer 414, first electron transport layer 315 and second electron transport layer 415. This facilitates the entire surface to be paved with the first electron injection layer 314 and second electron injection layer 414, first electron transport layer 315 and second electron transport layer 415.

[0198] When the support structure 5 and the sacrificial structure 6 are prepared first relative to the first carrier layer 310 and the second carrier layer 410, the materials of the first carrier layer 310 and the second carrier layer 410 prepared later fall into the notch 52, so that a portion of the first carrier layer 310 of the adjacent light-emitting unit 31 and a portion of the second carrier layer 410 of the photoelectric sensor unit 41 are connected in the notch 52. Since the sacrificial structure 6 separates the first carrier layer 310 and the second carrier layer 410, the display panel provided by the present application can still reduce the flow of carriers between the first carrier layer 310 and the second carrier layer 410.

[0199] In some embodiments, the orthographic projection of the pixel definition layer 2 on the substrate 1 overlaps with the orthographic projection of the notch 52 on the substrate 1, so that the material falling into the notch 52 can be supported by the pixel definition layer 2, thereby improving the stability of the layer structure formed by the material falling into the notch 52.

[0200] Please refer to Figure 1 , Figure 2 and Figure 3 In some embodiments, the first light emitting unit 31a is used to emit a first color light, and the second light emitting unit 31b is used to emit a second color light, and the wavelength of the first color light is different from the wavelength of the second color light.

[0201] The first color light and the second color light are different color lights, that is, the first light emitting unit 31a and the second light emitting unit 31b are used to emit different color lights. In order to reduce the influence of the second color light emitted by the second light emitting unit 31b on the light collected by the photoelectric sensor unit 41, the second light emitting unit 31b can be controlled not to work when the photoelectric sensor unit 41 works.

[0202] In some embodiments, the photoelectric sensing unit 41 is used to generate a first electrical signal according to the received first color light.

[0203] The light-emitting unit 31 can be used as a light source for the photoelectric sensing unit 41 to receive light. The light-emitting unit 31 emits light of a specific color. The specific color light propagates outward and is reflected at the organism to be detected. The reflected light enters the photoelectric sensing unit 41, and the photoelectric sensing unit 41 realizes photoelectric conversion to generate an electrical signal about the organism to be detected. In this embodiment, the first light-emitting unit 31a serves as the light source of the photoelectric sensing unit 41. The first light-emitting unit 31a emits a first color light outward. The photoelectric sensing unit 41 generates a first electrical signal based on the received first color light, that is, when the photoelectric sensing unit 41 is working, the first light-emitting unit 31a also works. In order to reduce the influence of the second color light emitted by the second light-emitting unit 31b on the collection of the first color light by the photoelectric sensing unit 41, the second light-emitting unit 31b can be controlled not to work when the photoelectric sensing unit 41 is working.

[0204] By setting the notch 52 between the photoelectric sensing unit 41 and the second light-emitting unit 31, when the photoelectric sensing unit 41 is in operation, the first light-emitting unit 31a works, and the sacrificial structure 6 can prevent the flow of carriers between the first carrier layer 310 and the second carrier layer 410, thereby reducing the crosstalk between the photoelectric sensing unit 41 and the first light-emitting unit 31a. When the photoelectric sensing unit 41 is not in operation and the second light-emitting unit 31b is in operation, the carriers in the first carrier layer 310 flow to the second carrier layer 410 through the notch 52, without affecting the operation of the photoelectric sensing unit 41.

[0205] In some embodiments, the plurality of light emitting units 31 include a third light emitting unit 31 c for emitting a third color light, and the photoelectric sensing unit 41 is used to generate a second electrical signal according to the received third color light.

[0206] The photoelectric sensing unit 41 can not only perform photoelectric conversion on the first color light, but also perform photoelectric conversion on the third color light. Optionally, the photoelectric sensing unit 41 is used to generate a third electrical signal according to the received first color light and third color light. Optionally, the first color light, the second color light and the third color light can be any one of red light, blue light and green light respectively.

[0207] In some embodiments, the first light emitting unit 31 a is used to emit green light or red light, and the second light emitting unit 31 b is used to emit blue light.

[0208] For example, the first color light is red light, the second color light is blue light, and the third color light is green light. For example, the first color light is green light, the second color light is blue light, and the third color light is red light.

[0209] In some embodiments, the plurality of light-emitting units 31 include a first light-emitting unit 31a for emitting a first color light, a second light-emitting unit 31b for emitting a second color light, and a third light-emitting unit 31c for emitting a third color light. The first light-emitting unit 31a and the third light-emitting unit 31c are alternately arranged along a second direction Y to form a first device group 32. The second light-emitting unit 31b and the photoelectric sensor unit 41 are alternately arranged along the second direction Y to form a second device group 33. The first device group 32 and the second device group 33 are alternately arranged along a third direction Z, and the second direction Y and the third direction Z intersect.

[0210] Optionally, the second direction Y is perpendicular to the third direction Z. Optionally, the first direction X, the second direction Y and the third direction Z are perpendicular to each other.

[0211] The first light-emitting unit 31a and the third light-emitting unit 31c are alternately arranged along the second direction Y to form a first device group 32, the second light-emitting unit 31b and the photoelectric sensor unit 41 are alternately arranged along the second direction Y to form a second device group 33, and the first device group 32 and the second device group 33 are alternately arranged along the third direction Z, so that the first light-emitting unit 31a, the second light-emitting unit 31b, the third light-emitting unit 31c and the photoelectric sensor unit 41 are evenly arranged, which is beneficial to improving the uniformity of the display effect of each part of the display panel.

[0212] In some embodiments, a photoelectric sensing unit 41 is arranged between the first light-emitting units 31a in adjacent first device groups 32 to increase the minimum spacing distance between the first light-emitting unit 31a and the photoelectric sensing unit 41 and reduce the optical path of the light emitted by the first light-emitting unit 31a entering the photoelectric sensing unit 41 after refraction.

[0213] In some embodiments, the orthographic projection area of ​​the second light emitting unit 31b on the substrate 1 is larger than the orthographic projection area of ​​the first light emitting unit 31a on the substrate 1, larger than the orthographic projection area of ​​the third light emitting unit 31c on the substrate 1, and larger than the orthographic projection area of ​​the photoelectric sensor unit 41 on the substrate 1. The orthographic projection area of ​​the photoelectric sensor unit 41 on the substrate 1 is smaller than the orthographic projection area of ​​the first light emitting unit 31a on the substrate 1, and smaller than the orthographic projection area of ​​the third light emitting unit 31c on the substrate 1. Therefore, the second light emitting unit 31b and the photoelectric sensor unit 41 are alternately arranged along the second direction Y to form the second device group 33, so that the light sensor can be the second light emitting unit 31b, and the second light emitting unit 31b with a larger projection area is obtained.

[0214] Optionally, the first light emitting unit 31 a is disposed between the third light emitting units 31 c in adjacent first device groups 32 , and part of the first light emitting unit 31 a is also disposed between the first light emitting units 31 a in adjacent first device groups 32 .

[0215] Please refer to Figure 5 In some embodiments, the sacrificial structure 6 and the corresponding supporting structure 5 are arranged around the photoelectric sensing unit 41, and the sacrificial structure 6 and the corresponding supporting structure 5 include a first isolation wall 61, a second isolation wall 62, a third isolation wall 63 and a fourth isolation wall 64 connected end to end. The first isolation wall 61 and the third isolation wall 63 are arranged on opposite sides of the photoelectric sensing unit 41 along the second direction Y, and the second isolation wall 62 and the fourth isolation wall 64 are arranged on opposite sides of the photoelectric sensing unit 41 along the third direction Z.

[0216] The sacrificial structure 6 and the corresponding support structure 5 may be a retaining wall structure disposed around the photoelectric sensor unit 41. The first isolation wall 61 and the third isolation wall 63 are disposed on opposite sides of the photoelectric sensor unit 41 along the second direction Y, so that the first carrier layer 310 of the second light-emitting unit 31b located on opposite sides of the photoelectric sensor unit 41 along the second direction Y can be separated from the second carrier layer 410 of the photoelectric sensor unit 41 by the sacrificial structure 6, thereby reducing or avoiding the influence of the second light-emitting unit 31b located on opposite sides of the photoelectric sensor unit 41 on the photoelectric sensor unit 41. The second isolation wall 62 and the fourth isolation wall 64 are disposed on opposite sides of the photoelectric sensor unit 41 along the third direction Z, so that the first carrier layer 310 of the first light-emitting unit 31a located on opposite sides of the photoelectric sensor unit 41 along the third direction Z can be separated from the second carrier layer 410 of the photoelectric sensor unit 41 by the sacrificial structure 6, thereby reducing or avoiding the influence of the first light-emitting unit 31a located on opposite sides of the photoelectric sensor unit 41 on the photoelectric sensor unit 41.

[0217] In some embodiments, in the same sacrificial structure 6, the first isolation wall 61, the second isolation wall 62, the third isolation wall 63 and the fourth isolation wall 64 form a ring surrounding the photoelectric sensing unit 41, that is, the first isolation wall 61, the second isolation wall 62, the third isolation wall 63 and the fourth isolation wall 64 form a closed wall surrounding the photoelectric sensing unit 41, so that the second carrier layer 410 in the photoelectric sensing unit 41 is completely separated from the first carrier layer 310 of the adjacent light-emitting unit 31. Figure 1 Can be Figure 3 The display panel is shown in a cross-sectional view along a third direction Z.

[0218] In some embodiments, the first isolation wall 61 has a notch 52 , and at least a portion of at least one first carrier layer 310 in the second light emitting unit 31 b and at least a portion of at least one second carrier layer 410 in the photoelectric sensing unit 41 are connected through the notch 52 .

[0219] The first isolation wall 61 has a notch 52 to ensure that the first carrier layer 310 and the second carrier layer 410 located in the notch 52 are connected, and the part of the first electrode 316 located in the notch 52 is connected to the second electrode 416. The photoelectric sensor unit 41 is used to receive the first color light and / or the third color light and convert it into an electrical signal. The first isolation wall 61 is provided with a notch 52, so that when the second light-emitting unit 31b is working, the photoelectric sensor unit 41 does not work, so as to avoid the second light-emitting unit 31b affecting the operation of the photoelectric sensor unit 41; when the first light-emitting unit 31a or the third light-emitting unit 31c is working, the photoelectric sensor unit 41 works, and the second isolation wall 62 and the fourth isolation wall 64 can avoid the first light-emitting unit 31a and the third light-emitting unit 31c affecting the operation of the photoelectric sensor unit 41.

[0220] Optionally, the length of the notch 52 along the third direction Z is smaller than the length of the third light emitting unit 31 c along the third direction Z, so that the first isolation wall 61 can isolate part of the third light emitting unit 31 c from part of the photoelectric sensing unit 41 .

[0221] Optionally, the third isolation wall 63 has a notch 52, that is, both the first isolation wall 61 and the third isolation wall 63 have a notch 52. Optionally, the first light emitting unit 31a is a green light emitting unit 31, the second light emitting unit 31b is a blue light emitting unit 31, and the third light emitting unit 31c is a red light emitting unit 31.

[0222] Please refer to Figure 1 , Figure 2 and Figure 6 In some other embodiments, the plurality of light-emitting units 31 include a first light-emitting unit 31a for emitting a first color light, a second light-emitting unit 31b for emitting a second color light, and a third light-emitting unit 31c for emitting a third color light. The plurality of first light-emitting units 31a are alternately arranged along the second direction Y to form a third device group 34. The plurality of photoelectric sensor units 41 are arranged along the second direction Y to form a fourth device group 36. The second light-emitting unit 31b and the third light-emitting unit 31c are arranged along the second direction Y to form a fifth device group 35. The third device group 34, the fourth device group 36, and the fifth device group 35 are alternately arranged along the third direction Z, and the second direction Y and the third direction Z intersect.

[0223] Optionally, the second direction Y is perpendicular to the third direction Z. Optionally, the first direction X, the second direction Y and the third direction Z are perpendicular to each other.

[0224] By alternately arranging the third device group 34, the fourth device group 36 and the fifth device group 35 along the third direction Z, the first light-emitting unit 31a, the second light-emitting unit 31b, the third light-emitting unit 31c and the photoelectric sensor unit 41 are evenly arranged, which is beneficial to improving the uniformity of the display effect of each part of the display panel.

[0225] Optionally, in the fifth device group 35, a second light-emitting unit 31b and a third light-emitting unit 31c arranged at intervals along the second direction Y, and another third light-emitting unit 31c arranged at intervals along the third direction Z with the second light-emitting unit 31b in an adjacent fifth device group 35, and another second light-emitting unit 31b arranged at intervals along the third direction Z with the third light-emitting unit 31c form a virtual quadrilateral A, and in the third device group 34 and the fourth device group 36 located between the adjacent fifth device groups 35, at least one first light-emitting unit 31a and at least one photoelectric sensor unit 41 are located within the virtual quadrilateral A.

[0226] In some embodiments, the plurality of photoelectric sensing units 41 include a first sensing unit 41a, which is disposed along a fourth direction P between a first light-emitting unit 31a in an adjacent third device group 34 and a second light-emitting unit 31b in a fifth device group 35, and the second direction Y, the third direction Z and the fourth direction P intersect in the same plane.

[0227] When the second direction Y is defined as a direction deflected by 0° relative to the reference axis, the second direction Y is a direction deflected by 90° relative to the reference axis, and the fourth direction P is a direction deflected by 0° to -90° relative to the reference axis. For example, the fourth direction P is deflected by -30°, -45°, -60°, etc. relative to the reference axis.

[0228] The second sensing unit 41b is arranged between the first light-emitting unit 31a in the adjacent first device group 32 and the second light-emitting unit 31b in the fifth device group 35 along the fourth direction P, so that the first carrier layer 310 of the first light-emitting unit 31a and the first carrier layer 310 of the second light-emitting unit 31b located on the opposite sides of the second sensing unit 41b along the fourth direction P can be separated from the second carrier layer 410 of the photoelectric sensing unit 41 by the sacrificial structure 6, thereby reducing or avoiding the influence of the first light-emitting unit 31a and the second light-emitting unit 31b located on the opposite sides of the photoelectric sensing unit 41 on the photoelectric sensing unit 41.

[0229] In some embodiments, the plurality of photoelectric sensing units 41 include a second sensing unit 41b, which is disposed along a fourth direction P between a first light-emitting unit 31a in an adjacent third device group 34 and a third light-emitting unit 31c in a fifth device group 35, and the second direction Y, the third direction Z and the fourth direction P intersect in the same plane.

[0230] The second sensing unit 41b is arranged between the first light-emitting unit 31a in the adjacent first device group 32 and the third light-emitting unit 31c in the fifth device group 35 along the fourth direction P, so that the first carrier layer 310 of the first light-emitting unit 31a and the first carrier layer 310 of the third light-emitting unit 31c located on the opposite sides of the second sensing unit 41b along the fourth direction P can be separated from the second carrier layer 410 of the photoelectric sensing unit 41 by the sacrificial structure 6, thereby reducing or avoiding the influence of the first light-emitting unit 31a and the third light-emitting unit 31c located on the opposite sides of the photoelectric sensing unit 41 on the photoelectric sensing unit 41.

[0231] Please refer to Figure 7In some embodiments, the sacrificial structure 6 and the corresponding supporting structure 5 are arranged around the photoelectric sensing unit 41, and the sacrificial structure 6 and the corresponding supporting structure 5 include a first isolation wall 61, a second isolation wall 62, a third isolation wall 63 and a fourth isolation wall 64 connected end to end. The first isolation wall 61 and the third isolation wall 63 are arranged on opposite sides of the photoelectric sensing unit 41 along a fourth direction P, and the second isolation wall 62 and the fourth isolation wall 64 are arranged on opposite sides of the photoelectric sensing unit 41 along a fifth direction Q. The second direction Y, the third direction Z, the fourth direction P and the fifth direction Q intersect in the same plane.

[0232] When the second direction Y is defined as a direction deflected by 0° relative to the reference axis, the second direction Y is a direction deflected by 90° relative to the reference axis, the fourth direction P is a direction deflected by 0° to -90° relative to the reference axis, and the fifth direction Q is a direction deflected by 0° to 90° relative to the reference axis. For example, the fifth direction Q is deflected by 30°, 45°, 75°, etc. relative to the reference axis.

[0233] The sacrificial structure 6 may be a retaining wall structure disposed around the photoelectric sensing unit 41. The first isolation wall 61 and the third isolation wall 63 are disposed on opposite sides of the photoelectric sensing unit 41 along the fourth direction P, so that the first carrier layer 310 of the first light-emitting unit 31a and the first carrier layer 310 of the second light-emitting unit 31b located on opposite sides of the first sensing unit 41a along the fourth direction P can be separated from the second carrier layer 410 of the photoelectric sensing unit 41 by the sacrificial structure 6, and the first carrier layer 310 of the first light-emitting unit 31a and the first carrier layer 310 of the third light-emitting unit 31c located on opposite sides of the second sensing unit 41b along the fourth direction P can be separated from the second carrier layer 410 of the photoelectric sensing unit 41 by the sacrificial structure 6, so as to reduce or avoid the influence of the light-emitting units 31 located on opposite sides of the photoelectric sensing unit 41 on the photoelectric sensing unit 41. The second isolation wall 62 and the fourth isolation wall 64 are arranged on opposite sides of the photoelectric sensing unit 41 along the fifth direction Q, so that the first carrier layer 310 of the light-emitting unit 31 located on opposite sides of the photoelectric sensing unit 41 along the fifth direction Q can be separated from the second carrier layer 410 of the photoelectric sensing unit 41 by the sacrificial structure 6, thereby reducing or avoiding the influence of the light-emitting units 31 located on opposite sides of the photoelectric sensing unit 41 on the photoelectric sensing unit 41.

[0234] In some embodiments, in the same sacrificial structure 6, the first isolation wall 61, the second isolation wall 62, the third isolation wall 63 and the fourth isolation wall 64 form a ring surrounding the photoelectric sensing unit 41, that is, the first isolation wall 61, the second isolation wall 62, the third isolation wall 63 and the fourth isolation wall 64 form a closed wall surrounding the photoelectric sensing unit 41, so that the second carrier layer 410 in the photoelectric sensing unit 41 is completely separated from the first carrier layer 310 of the adjacent light-emitting unit 31.

[0235] In some embodiments, at least part of the first isolation wall 61 has a notch 52 , and at least part of at least one first carrier layer 310 in the second light-emitting unit 31 b and at least part of at least one second carrier layer 410 in the photoelectric sensing unit 41 are connected through the notch 52 .

[0236] The first isolation wall 61 has a notch 52 to ensure that the first carrier layer 310 and the second carrier layer 410 located in the notch 52 are connected, and the part of the first electrode 316 located in the notch 52 is connected to the second electrode 416. The first sensing unit 41a is used to receive the first color light and / or the third color light and convert it into an electrical signal. The first isolation wall 61 is provided with a notch 52, so that when the second light-emitting unit 31b is working, the first sensing unit 41a does not work, so as to avoid the second light-emitting unit 31b affecting the operation of the photoelectric sensing unit 41; when the first light-emitting unit 31a or the third light-emitting unit 31c is working, the first sensing unit 41a works, and the second isolation wall 62, the third isolation wall 63 and the fourth isolation wall 64 can avoid the first light-emitting unit 31a and the third light-emitting unit 31c affecting the operation of the photoelectric sensing unit 41.

[0237] In some embodiments, at least part of the first isolation wall 61 has a notch 52 , and at least part of at least one first carrier layer 310 in the third light-emitting unit 31 c and at least part of at least one second carrier layer 410 in the photoelectric sensing unit 41 are connected through the notch 52 .

[0238] The first isolation wall 61 has a notch 52 to ensure that the first carrier layer 310 and the second carrier layer 410 located in the notch 52 are connected, and the part of the first electrode 316 located in the notch 52 is connected to the second electrode 416. The photoelectric sensor unit 41 is used to receive the first color light and convert it into an electrical signal. The first isolation wall 61 is provided with a notch 52, so that when the third light-emitting unit 31c is working, the photoelectric sensor unit 41 does not work, so as to avoid the third light-emitting unit 31c affecting the operation of the photoelectric sensor unit 41; when the first light-emitting unit 31a is working, the photoelectric sensor unit 41 works, and the second isolation wall 62, the third isolation wall 63 and the fourth isolation wall 64 can avoid the first light-emitting unit 31a affecting the operation of the photoelectric sensor unit 41.

[0239] Optionally, the first light emitting unit 31 a is a green light emitting unit 31 , the second light emitting unit 31 b is a blue light emitting unit 31 , and the third light emitting unit 31 c is a red light emitting unit 31 .

[0240] In some embodiments, the wavelength of the first color light is greater than the wavelength of the second color light.

[0241] The second color light has stronger penetration than the first color light, so when the second color light is used as the light source, less second color light is reflected back to the photoelectric sensor unit 41, affecting the amount of light received by the photoelectric sensor unit 41. Therefore, the first light-emitting unit 31a emits the first color light to increase the amount of reflected light received by the photoelectric sensor unit 41 when the first light-emitting unit 31a is used as the light source.

[0242] In some embodiments, the second light emitting unit 31 b is configured to emit blue light.

[0243] In some embodiments, the first light emitting unit 31 a is configured to emit green light or red light.

[0244] Optionally, the first light emitting unit 31 a emits green light, and the third light emitting unit 31 c emits red light.

[0245] The display panel provided in the present application may further include an encapsulation layer, a cover plate covering the side of the encapsulation layer facing away from the substrate 1, an optical adhesive layer between the encapsulation layer and the cover plate, etc. The encapsulation layer is used to encapsulate and protect the light-emitting device layer 3 and the first electrode 316 to reduce the entry of external water and oxygen into the display panel. The cover plate can reduce the damage of the light-emitting device layer 3 by external forces. The optical adhesive layer bonds the cover plate and the encapsulation layer.

[0246] See also Figure 8 In some embodiments, the display panel also includes a first encapsulation layer 7, which is arranged on the side of the first electrode 316 and the second electrode 416 connected in an integral manner away from the substrate 1. The first encapsulation layer 7 includes a first sublayer 71, a second sublayer 72 and a third sublayer 73 stacked in sequence along a direction away from the substrate 1. The first sublayer 71 and the third sublayer 73 include silicon oxynitride material, and the second sublayer 72 includes an organic glue material.

[0247] By providing sub-layers made of different materials, the encapsulation effect of the first encapsulation layer 7 is improved.

[0248] In some embodiments, the display panel further includes a second encapsulation layer 8 disposed on a side of the first encapsulation layer 7 facing away from the substrate 1 , and the second encapsulation layer 8 includes an inorganic material.

[0249] The second encapsulation layer 8 is provided to improve the ability of the display panel to isolate water and oxygen.

[0250] In some embodiments, in a first direction X perpendicular to the substrate 1 , the thickness of the sacrificial structure 6 is not less than the thickness of at least one first carrier layer 310 , and / or the thickness of the sacrificial structure 6 is not less than the thickness of at least one second carrier layer 410 .

[0251] By controlling the thickness of the sacrificial structure 6 , the support structure 5 can separate the layer structure prepared later, and the layer structure prepared later is at least one first carrier layer 310 or at least one second carrier layer 410 .

[0252] In a second aspect, the present application also provides a display panel, see Figures 1 to 7 The display panel includes: a substrate 1, a pixel definition layer 2, a light emitting device layer 3, a photoelectric sensor device layer 4, a first isolation layer and a second isolation layer, wherein the pixel definition layer 2 is arranged on one side of the substrate 1, and the pixel definition layer 2 includes a plurality of first openings 21 and a plurality of second openings 22, and at least part of the first openings 21 and at least part of the second openings 22 are adjacent to each other; the light emitting device layer 3 includes a plurality of light emitting units 31, and a portion of the light emitting unit 31 is arranged in the corresponding first opening 21, and the light emitting unit 31 includes a plurality of first functional layers arranged in a stacked manner; the photoelectric sensor device layer 4 includes a plurality of photoelectric sensor units 41, and a portion of the photoelectric sensor units 41 is arranged in the corresponding second openings In the opening 22, the photoelectric sensing unit 41 includes a plurality of second functional layers stacked in a stacked manner; the first isolation layer is arranged on the side of the pixel definition layer 2 facing away from the substrate 1, the second isolation layer is arranged between the first isolation layer and the pixel definition layer 2, the orthographic projection of the second isolation layer on the substrate 1 is located within the orthographic projection of the first isolation layer on the substrate 1, and at least a portion of at least one first functional layer in the light-emitting unit 31 and at least a portion of at least one second functional layer in the adjacent photoelectric sensing unit 41 are separated by the second isolation layer; wherein, in a first direction X perpendicular to the substrate 1, the second isolation layer has a first thickness, the first isolation layer has a second thickness, and the first thickness is less than the second thickness.

[0253] In the display panel provided in the second aspect of the present application, the substrate 1, the pixel definition layer 2, the light-emitting device layer 3, and the photoelectric sensor device layer 4 can refer to the substrate 1, the pixel definition layer 2, the light-emitting device layer 3, and the photoelectric sensor device layer 4 in the display panel provided in the first aspect. The first isolation layer in the display panel provided in the second aspect of the present application can be set with reference to the support structure 5 in the display panel provided in the first aspect. The second isolation layer in the display panel provided in the second aspect of the present application can be set with reference to the sacrificial structure 6 in the display panel provided in the first aspect.

[0254] In this embodiment, by setting the orthographic projection of the second isolation layer on the substrate 1 to be within the orthographic projection of the first isolation layer on the substrate 1, the first functional layer and the second functional layer separated by the second isolation layer can be prepared without a mask having a specific pattern, thereby avoiding or reducing crosstalk between the first functional layer and the second functional layer, and improving the signal-to-noise ratio of the electrical signal generated by the photoelectric sensing unit 41; in the process of preparing the display panel, the second isolation layer with a sufficient thickness can not only be supported between the mask and the substrate 1, but also can be used as a shield for preparing the first functional layer and the second functional layer, and can also be used as a mask for preparing the first isolation layer, thereby realizing multiple uses of the second isolation layer.

[0255] In some embodiments, the multiple first functional layers include at least one first carrier layer 310, the multiple second functional layers include at least one second carrier layer 410, and at least part of the first carrier layer 310 in the light-emitting unit 31 and at least part of the second carrier layer 410 in the adjacent photoelectric sensing unit 41 are located on both sides of the second isolation layer.

[0256] The first carrier layer 310 and the second carrier layer 410 are isolated by the sacrificial structure 6, thereby avoiding or reducing the transmission of carriers between the first carrier layer 310 and the second carrier layer 410. The carrier layer can generate and transmit carriers, and the carriers can be holes or electrons.

[0257] In some embodiments, at least one first carrier layer 310 includes a first hole injection layer 311 and a first hole transport layer 312, and the first hole injection layer 311 is located on a side of the first hole transport layer 312 close to the substrate 1, and at least one second carrier layer 410 includes a second hole injection layer 411 and a second hole transport layer 412, and the second hole injection layer 411 is located on a side of the second hole transport layer 412 close to the substrate 1; at least part of the first hole injection layer 311 in the light-emitting unit 31 and at least part of the second hole injection layer 411 in the adjacent photoelectric sensing unit 41 are located on both sides of the second isolation layer, and / or at least part of the first hole transport layer 312 in the light-emitting unit 31 and at least part of the second hole transport layer 412 in the adjacent photoelectric sensing unit 41 are located on both sides of the second isolation layer.

[0258] By at least part of the first hole injection layer 311 in the light-emitting unit 31 and the second hole injection layer 411 in the adjacent photoelectric sensing unit 41 being located on both sides of the second isolation layer, hole transmission between the first hole injection layer 311 and the second hole injection layer 411 is avoided or reduced. By the first hole transport layer 312 in the light-emitting unit 31 and the second hole transport layer 412 in the adjacent photoelectric sensing unit 41 being located on both sides of the corresponding second isolation layer, hole transmission between the first hole transport layer 312 and the second hole transport layer 412 is avoided or reduced.

[0259] In some embodiments, the multiple first functional layers include at least one third carrier layer 320, which is located on the side of the first carrier layer 310 away from the substrate 1, and the multiple second functional layers include at least one fourth carrier layer 420, which is located on the side of the second carrier layer 410 away from the substrate 1; at least one third carrier layer 320 in the light-emitting unit 31 and at least one fourth carrier layer 420 in the adjacent photoelectric sensing unit 41 extend to the side of the corresponding first isolation layer away from the substrate 1, and are connected as an integrated unit.

[0260] The third carrier layer 320 in the adjacent light emitting unit 31 and the fourth carrier layer 420 in the photoelectric sensing unit 41 are connected across the first isolation layer, which simplifies the preparation steps.

[0261] See also Figures 9 to 11 The third aspect of the present application also provides a method for preparing a display panel, including:

[0262] S100, providing a substrate 1;

[0263] S200, disposing a pixel definition layer 2 on one side of the substrate 1, wherein the pixel definition layer 2 includes a plurality of first openings 21 and a plurality of second openings 22, wherein at least some of the first openings 21 and at least some of the second openings 22 are adjacent to each other;

[0264] S300, sequentially disposing an isolation material layer and a support material layer on a side of the pixel definition layer 2 facing away from the substrate 1;

[0265] S400, performing patterning on the support material layer to obtain a plurality of support structures 5;

[0266] S500, patterning the isolation material layer to obtain a plurality of sacrificial structures 6, wherein the sacrificial structures 6 are disposed between the support structure 5 and the pixel definition layer 2, wherein the orthographic projection of the sacrificial structures 6 on the substrate 1 is located within the orthographic projection of the support structure 5 on the substrate 1, and the orthographic projection of the sacrificial structures 6 on the pixel definition layer 2 is located at least between adjacent first openings 21 and second openings 22;

[0267] S600, a first material is disposed on one side of the substrate 1, part of the first material is broken at the edge of the supporting structure 5 and falls into the first opening 21 to form a first carrier layer 310 of the light-emitting unit 31, part of the first material is broken at the edge of the supporting structure 5 and falls into the second opening 22 to form a second carrier layer 410 of the photoelectric sensing unit 41, at least part of at least one first carrier layer 310 in the light-emitting unit 31 and at least part of at least one second carrier layer 410 in the adjacent photoelectric sensing unit 41 are located on both sides of the corresponding sacrificial structure 6 and are spaced apart from the sacrificial structure 6.

[0268] In S600, the first material may be deposited onto the substrate 1 based on a chemical vapor deposition process. Part of the first material falls into the adjacent first opening 21 and second opening 22 and accumulates to form the first carrier layer 310 and the second carrier layer 410, and part of the first material falls onto the side of the support structure 5 away from the substrate 1. Since the first material has a large drop at the edge of the support structure 5, the first carrier layer 310 and the second carrier layer 410 are separated by the sacrificial structure 6, so that the first carrier layer 310 and the second carrier layer 410 are prepared in the same step.

[0269] Since the method for preparing a display panel provided in the third aspect embodiment of the present application can prepare a display panel including any embodiment of the first aspect or the second aspect mentioned above, the display device provided in the third aspect embodiment of the present application has the beneficial effects of the display panels of the first aspect or the second aspect mentioned above, which will not be repeated here.

[0270] In some embodiments, S400 includes:

[0271] S410 , using the support structure 5 as a mask, etching the isolation material layer to obtain a plurality of sacrificial structures 6 .

[0272] Since the orthographic projection of the sacrificial structure 6 on the substrate 1 is within the orthographic projection of the supporting structure 5 on the substrate 1, the prepared supporting structure 5 can be used as a mask to etch the isolation material layer to obtain multiple sacrificial structures 6, eliminating the need to design a mask for preparing the sacrificial structure 6.

[0273] Optionally, the support material layer is photoetched to obtain a plurality of support structures 5 , and the isolation material layer is wet-etched to obtain a plurality of sacrificial structures 6 .

[0274] S600 and later include:

[0275] S700, taking a preset mask 200, and placing the substrate 1 and the mask relative to each other so that the support structure 5 is supported on the preset mask 200, and the mask has patterned light-transmitting holes;

[0276] S800 , using the preset mask plate 200 to evaporate a third material to form the light emitting layer 313 of the light emitting unit 31 located in the first opening 21 .

[0277] The support structure 5 can be supported on the preset mask 200 to ensure the distance between the preset mask 200 and the substrate 1 and control the light-emitting layer 313 formed by evaporation.

[0278] S700 and later also include:

[0279] S900 , using the preset mask plate 200 to evaporate a fourth material to form an active layer 413 of the photoelectric sensor unit 41 located in the second opening 22 .

[0280] The support structure 5 can be supported on the preset mask 200 to ensure the distance between the preset mask 200 and the substrate 1 and control the active layer formed by evaporation.

[0281] In some embodiments, after S800 and S900, the method further includes:

[0282] S910, a second material is disposed on one side of the substrate 1, part of the second material falls on one side of the light emitting unit 31 to form a third carrier layer 320, part of the second material falls on one side of the photoelectric sensing unit 41 to form a fourth carrier layer 420, and the third carrier layer 320 is connected to the fourth carrier layer 420;

[0283] S920 , disposing a first conductive material on one side of the substrate 1 , the first conductive material being located on the third carrier layer 320 and the fourth carrier layer 420 to form a first electrode 316 .

[0284] In some embodiments, Fig. 9 (a) and Fig. 9 As shown in (b), a second conductive material layer 80 is formed on one side of the substrate 1, and the second conductive material layer 80 is patterned to obtain a third electrode 317 and a fourth electrode 417 that are spaced apart; Fig. 9 As shown in (c), a pixel definition material layer 20 is provided, and the pixel definition material layer 20 is patterned to obtain a first opening 21 and a second opening 22 spaced apart from each other, at least a portion of the third electrode 317 is exposed from the first opening 21, and at least a portion of the fourth electrode 417 is exposed from the second opening 22. Fig.10 As shown in (a), an isolation material layer 60 and a support material layer 50 of a desired thickness are sequentially provided; Fig.10 As shown in (b), the support material layer 50 is patterned to obtain a plurality of support structures 5; Fig.10 (c), using the support structure 5 as a mask, the isolation material layer 60 is etched to obtain a plurality of sacrificial structures 6; Fig.10 (d) A first material is disposed on one side of the substrate 1, part of the first material is broken at the edge of the support structure 5 and falls into the first opening 21 to form the first carrier layer 310 of the light-emitting unit 31, and part of the first material is broken at the edge of the support structure 5 and falls into the second opening 22 to form the second carrier layer 410 of the photoelectric sensing unit 41, and at least part of the first carrier layer 310 in the adjacent light-emitting unit 31 and at least part of the second carrier layer 410 in the photoelectric sensing unit 41 are respectively located on both sides of the sacrificial structure 6 and are spaced from the sacrificial structure 6. Fig.11As shown in (a), a preset mask 200 is taken, and the substrate 1 and the mask are arranged relative to each other so that the support structure 5 is supported on the preset mask 200, and the third material is evaporated on the preset mask 200 to form the light-emitting layer 313 of the light-emitting unit 31 located in the first opening 21, and the fourth material is evaporated on the preset mask 200 to form the active layer 413 of the photoelectric sensing unit 41 located in the second opening 22; Fig.11 As shown in (b), a second material is arranged on one side of the substrate 1, part of the second material falls on one side of the light-emitting unit 31 to form a third carrier layer 320, and part of the second material falls on one side of the photoelectric sensing unit 41 to form a fourth carrier layer 420, and the third carrier layer 320 is connected to the fourth carrier layer 420; a first conductive material is arranged on one side of the substrate 1, and the first conductive material is located on the third carrier layer 320 and the fourth carrier layer 420 to form a first electrode 316 and a second electrode 416 connected to each other.

[0285] The embodiment of the fourth aspect of the present application also provides a display device, including the display panel of any of the first and second aspects, or the display panel prepared by the embodiment of the third aspect. Since the display device provided by the embodiment of the fourth aspect of the present application includes the display panel of any of the first and second aspects, or the display panel prepared by the embodiment of the third aspect, the display device provided by the embodiment of the fourth aspect of the present application has the beneficial effects of the display panel prepared by any of the first, second and third aspects, which will not be described in detail here.

[0286] The display device in the embodiments of the present application includes but is not limited to mobile phones, personal digital assistants (PDAs), tablet computers, e-books, televisions, access control systems, smart landline phones, consoles, and other devices with display functions.

[0287] According to the embodiments of the present application as above, these embodiments do not describe all the details in detail, nor do they limit the invention to specific embodiments. Obviously, many modifications and changes can be made based on the above description. This specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the present application, so that those skilled in the art can make good use of the present application and the modifications based on the present application. The present application is only limited by the claims and their full scope and equivalents.

Claims

1. A display panel, characterized in that: include: substrate; A pixel definition layer is disposed on one side of the substrate, the pixel definition layer comprises a plurality of first openings and a plurality of second openings, at least some of the first openings and at least some of the second openings are adjacent to each other; a light-emitting device layer, comprising a plurality of light-emitting units, wherein a portion of the light-emitting units is disposed in the corresponding first openings, the light-emitting units comprising a plurality of first functional layers stacked in layers, and the plurality of first functional layers comprising at least one first carrier layer; A photoelectric sensor device layer, comprising a plurality of photoelectric sensor units, wherein a portion of the photoelectric sensor unit is disposed in the corresponding second opening, the photoelectric sensor unit comprises a plurality of second functional layers stacked in layers, and the plurality of second functional layers comprises at least one second carrier layer; A plurality of sacrificial structures are arranged on a side of the pixel definition layer away from the substrate; A plurality of support structures, wherein the support structures are arranged on a side of the corresponding sacrificial structure away from the pixel definition layer, and the orthographic projection of the sacrificial structure on the substrate is located within the orthographic projection of the support structure on the substrate; Wherein, at least a portion of the at least one first carrier layer in the light-emitting unit and at least a portion of the at least one second carrier layer in the adjacent photoelectric sensing unit are located on both sides of the corresponding sacrificial structure.

2. The display panel according to claim 1, characterized in that: The at least one first carrier layer includes a first hole injection layer and a first hole transport layer, the first hole injection layer is located on a side of the first hole transport layer close to the substrate, and the at least one second carrier layer includes a second hole injection layer and a second hole transport layer, the second hole injection layer is located on a side of the second hole transport layer close to the substrate; The first hole injection layer in the light emitting unit and the second hole injection layer in the adjacent photoelectric sensing unit are located on both sides of the corresponding sacrificial structure; Preferably, the first hole transport layer in the light emitting unit and the second hole transport layer in the adjacent photoelectric sensing unit are located on both sides of the corresponding sacrificial structure; Preferably, the pixel definition layer has a first surface facing away from the substrate, the sacrificial structure is arranged on the first surface, the at least one first carrier layer extends from the first opening to the first surface, and the at least one second carrier layer extends from the second opening to the first surface.

3. The display panel according to claim 1, characterized in that: The sacrificial structure is spaced apart from at least a portion of the at least one first carrier layer in the corresponding light emitting unit and at least a portion of the at least one second carrier layer in the photoelectric sensing unit; Preferably, the at least one first carrier layer in the adjacent light-emitting units is an integrated structure.

4. The display panel according to claim 1, characterized in that: The light-emitting unit includes a first electrode, which is disposed on a side of the plurality of first functional layers away from the substrate, and the photoelectric sensing unit includes a second electrode, which is disposed on a side of the plurality of second functional layers away from the substrate, and the first electrode and the second electrode are an integrated structure; Preferably, the plurality of first functional layers include a light-emitting layer and at least one third carrier layer sequentially stacked on the at least one first carrier layer, and the plurality of second functional layers include an active layer and at least one fourth carrier layer sequentially stacked on the at least one second carrier layer; Wherein, the at least one third carrier layer in the light-emitting unit and the at least one fourth carrier layer in the adjacent photoelectric sensing unit extend to a side of the corresponding supporting structure away from the substrate and are connected in an integrated manner; Preferably, the at least one third carrier layer includes a first electron injection layer and a first electron transport layer, the first electron injection layer is located on a side of the first electron transport layer away from the substrate, and the at least one fourth carrier layer includes a second electron injection layer and a second electron transport layer, the second electron injection layer is located on a side of the second electron transport layer away from the substrate; Wherein, the first electron injection layer and the second electron injection layer extend to a side of the corresponding support structure away from the substrate and are connected as an integral body; Preferably, the first electron transport layer and the second electron transport layer extend to a side of the corresponding first electron injection layer and the second electron injection layer away from the substrate, and are connected in an integrated manner.

5. The display panel according to claim 1, characterized in that: In a first direction perpendicular to the substrate, the sacrificial structure has a first thickness, the supporting structure has a second thickness, and the first thickness is less than the second thickness; Preferably, the second thickness is greater than or equal to 1000 nm; Preferably, the first thickness is greater than or equal to 150 nm; Preferably, the multiple first functional layers include a light-emitting layer located on the side of the at least one first carrier layer facing away from the substrate, the multiple second functional layers include an active layer located on the side of the at least one second carrier layer facing away from the substrate, the surface of the support structure facing away from the substrate is located on the side of the light-emitting layer facing away from the substrate, and / or the surface of the support structure facing away from the substrate is located on the side of the active layer facing away from the substrate.

6. The display panel according to claim 1, characterized in that: The material of the sacrificial structure is different from the material of the supporting structure; Preferably, the sacrificial structure comprises a metal material; Preferably, the sacrificial structure comprises a metal oxide material; Preferably, the sacrificial structure comprises one or more materials selected from the group consisting of indium zinc oxide, indium gallium zinc oxide, and indium tin oxide; Preferably, the support structure comprises an organic material.

7. The display panel according to claim 1, characterized in that: The orthographic projection of the sacrificial structure on the pixel definition layer is located between the first opening and the second opening; Preferably, the orthographic projection of the support structure on the pixel definition layer does not overlap with the first opening, and the orthographic projection of the support structure on the pixel definition layer does not overlap with the second opening; Preferably, the orthographic projection area of ​​the surface of the support structure facing away from the substrate on the substrate is smaller than the orthographic projection area of ​​the surface of the support structure close to the substrate on the substrate; Preferably, an orthographic projection of a surface of the support structure facing away from the substrate on the substrate is located within an orthographic projection of a surface of the support structure close to the substrate on the substrate.

8. The display panel according to claim 1, characterized in that: The orthographic projection area of ​​the surface of the sacrificial structure facing away from the substrate on the substrate is larger than the orthographic projection area of ​​the surface of the sacrificial structure close to the substrate on the substrate; Preferably, an orthographic projection of a surface of the sacrificial structure close to the substrate on the substrate is located within an orthographic projection of a surface of the sacrificial structure facing away from the substrate on the substrate.

9. The display panel according to claim 4, characterized in that: The light emitting unit further comprises a third electrode, and the photoelectric sensing unit comprises a fourth electrode, wherein: A portion of the third electrode is disposed between the substrate and the pixel definition layer, and another portion of the third electrode is disposed between the plurality of first functional layers and the substrate; The fourth electrode is spaced apart from the third electrode, a portion of the fourth electrode is disposed between the substrate and the pixel definition layer, and another portion of the fourth electrode is disposed between the plurality of second functional layers and the substrate; The voltage of the first electrode is equal to the voltage of the second electrode, the voltage of the first electrode is lower than the voltage of the third electrode, and the voltage of the first electrode is higher than the voltage of the fourth electrode.

10. The display panel according to claim 1, characterized in that: The sacrificial structure and the corresponding supporting structure enclose a third opening, and the third opening is connected to the second opening; Preferably, the orthographic projection of the support structure on the substrate surrounds the orthographic projection of the corresponding at least one second carrier layer on the substrate; Preferably, the orthographic projection of the second opening on the substrate is located within the orthographic projection of the third opening on the substrate.

11. The display panel according to claim 1, characterized in that: The plurality of second functional layers include an active layer located on a side of the at least one second carrier layer away from the substrate, the sacrificial structure and the corresponding support structure are arranged around the corresponding active layer and have a notch portion exposing the corresponding active layer in a direction parallel to the substrate; Preferably, the plurality of light-emitting units include a first light-emitting unit and a second light-emitting unit adjacent to the corresponding photoelectric sensing unit, at least a portion of the at least one first carrier layer in the first light-emitting unit and at least a portion of the at least one second carrier layer in the photoelectric sensing unit are located on both sides of the corresponding sacrificial structure, and at least a portion of the at least one first carrier layer in the second light-emitting unit and at least a portion of the at least one second carrier layer in the photoelectric sensing unit are connected via the notch portion; Preferably, the first light emitting unit is used to emit a first color light, the second light emitting unit is used to emit a second color light, and the wavelength of the first color light is different from the wavelength of the second color light; Preferably, the photoelectric sensing unit is used to generate a first electrical signal according to the received first color light; Preferably, the first light emitting unit is used to emit green light or red light, and the second light emitting unit is used to emit blue light.

12. The display panel according to claim 1, characterized in that: The plurality of light emitting units include a first light emitting unit for emitting a first color light, a second light emitting unit for emitting a second color light, and a third light emitting unit for emitting a third color light. The first light-emitting units and the third light-emitting units are alternately arranged along a second direction to form a first device group, the second light-emitting units and the photoelectric sensing units are alternately arranged along the second direction to form a second device group, the first device group and the second device group are alternately arranged along a third direction, and the second direction and the third direction intersect; Preferably, the photoelectric sensing unit is arranged between the first light-emitting units in adjacent first device groups; Preferably, the sacrificial structure and the corresponding supporting structure are arranged around the photoelectric sensor unit, and the sacrificial structure and the corresponding supporting structure include a first isolation wall, a second isolation wall, a third isolation wall and a fourth isolation wall connected end to end, the first isolation wall and the third isolation wall are arranged on opposite sides of the photoelectric sensor unit along the second direction, and the second isolation wall and the fourth isolation wall are arranged on opposite sides of the photoelectric sensor unit along the third direction; Preferably, in the same sacrificial structure, the first isolation wall, the second isolation wall, the third isolation wall and the fourth isolation wall form a ring surrounding the photoelectric sensing unit; Preferably, the first isolation wall has a notch portion, and at least a portion of the at least one first carrier layer in the second light-emitting unit and at least a portion of the at least one second carrier layer in the photoelectric sensing unit are connected via the notch portion.

13. The display panel according to claim 1, characterized in that: The plurality of light emitting units include a first light emitting unit for emitting a first color light, a second light emitting unit for emitting a second color light, and a third light emitting unit for emitting a third color light. A plurality of the first light-emitting units are arranged along the second direction to form a third device group, a plurality of the photoelectric sensing units are arranged along the second direction to form a fourth device group, the second light-emitting units and the third light-emitting units are arranged along the second direction to form a fifth device group, the third device group, the fourth device group and the fifth device group are alternately arranged along the third direction, and the second direction intersects the third direction; Preferably, the plurality of photoelectric sensing units include a first sensing unit, the first sensing unit is arranged between a first light-emitting unit in the third device group and a second light-emitting unit in the fifth device group along a fourth direction, and the second direction, the third direction and the fourth direction intersect in the same plane; Preferably, the plurality of photoelectric sensing units include a second sensing unit, the second sensing unit is arranged between the first light-emitting unit in the third device group and the third light-emitting unit in the fifth device group along a fourth direction, and the second direction, the third direction and the fourth direction intersect in the same plane; Preferably, the sacrificial structure and the corresponding supporting structure are arranged around the periphery of the photoelectric sensor unit, and the sacrificial structure and the corresponding supporting structure include a first isolation wall, a second isolation wall, a third isolation wall and a fourth isolation wall connected end to end, the first isolation wall and the third isolation wall are arranged on opposite sides of the photoelectric sensor unit along a fourth direction, the second isolation wall and the fourth isolation wall are arranged on opposite sides of the photoelectric sensor unit along a fifth direction, and the second direction, the third direction, the fourth direction and the fifth direction intersect in the same plane; Preferably, in the same sacrificial structure, the first isolation wall, the second isolation wall, the third isolation wall and the fourth isolation wall form a ring surrounding the photoelectric sensing unit; Preferably, at least part of the first isolation wall has a notch portion, and at least part of the at least one first carrier layer in the second light-emitting unit and at least part of the at least one second carrier layer in the photoelectric sensor unit are connected through the notch portion; Preferably, at least part of the first isolation wall has a notch portion, and at least part of the at least one first carrier layer in the third light-emitting unit and at least part of the at least one second carrier layer in the photoelectric sensor unit are connected through the notch portion.

14. The display panel according to claim 4, characterized in that: Also includes: A first encapsulation layer is arranged on a side of the first electrode and the second electrode connected in an integral manner away from the substrate, the first encapsulation layer comprises a first sublayer, a second sublayer and a third sublayer stacked in sequence in a direction away from the substrate, the first sublayer and the third sublayer comprise silicon oxynitride material, and the second sublayer comprises an organic glue material; Preferably, the display panel further comprises a second encapsulation layer arranged on a side of the first encapsulation layer away from the substrate, and the second encapsulation layer comprises an inorganic material.

15. The display panel according to claim 1, characterized in that: In a first direction perpendicular to the substrate, the thickness of the sacrificial structure is not less than the thickness of the at least one first carrier layer, and / or the thickness of the sacrificial structure is not less than the thickness of the at least one second carrier layer.

16. A display panel, characterized in that: include: substrate; A pixel definition layer is disposed on one side of the substrate, the pixel definition layer comprises a plurality of first openings and a plurality of second openings, at least some of the first openings and at least some of the second openings are adjacent to each other; a light-emitting device layer, comprising a plurality of light-emitting units, wherein a portion of the light-emitting units is disposed in the corresponding first openings, and the light-emitting units include a plurality of first functional layers that are stacked; A photoelectric sensor device layer, comprising a plurality of photoelectric sensor units, wherein a portion of the photoelectric sensor unit is disposed in a corresponding second opening, and the photoelectric sensor unit comprises a plurality of second functional layers that are stacked; A first isolation layer is disposed on a side of the pixel definition layer away from the substrate, a second isolation layer, disposed between the first isolation layer and the pixel definition layer, wherein an orthographic projection of the second isolation layer on the substrate is located within an orthographic projection of the first isolation layer on the substrate, and at least a portion of at least one layer of the first functional layer in the light-emitting unit and at least a portion of at least one layer of the second functional layer in the adjacent photoelectric sensing unit are separated by the second isolation layer; Wherein, in a first direction perpendicular to the substrate, the second isolation layer has a first thickness, the first isolation layer has a second thickness, and the first thickness is smaller than the second thickness.

17. A method for preparing a display panel, characterized in that: include: providing a substrate; A pixel definition layer is disposed on one side of the substrate, wherein the pixel definition layer includes a plurality of first openings and a plurality of second openings, and at least some of the first openings and at least some of the second openings are adjacent to each other; sequentially disposing an isolation material layer and a support material layer on a side of the pixel definition layer away from the substrate; performing patterning on the support material layer to obtain a plurality of support structures; Performing patterning on the isolation material layer to obtain a plurality of sacrificial structures, wherein the sacrificial structures are disposed between the support structure and the pixel definition layer, the orthographic projections of the sacrificial structures on the substrate are located within the orthographic projections of the support structure on the substrate, and the orthographic projections of the sacrificial structures on the pixel definition layer are located at least between adjacent first openings and second openings; A first material is disposed on one side of the substrate, part of the first material breaks at the edge of the supporting structure and falls into the first opening to form a first carrier layer of the light-emitting unit, part of the first material breaks at the edge of the supporting structure and falls into the second opening to form a second carrier layer of the photoelectric sensing unit, at least part of the at least one first carrier layer in the light-emitting unit and at least part of the at least one second carrier layer in the adjacent photoelectric sensing unit are located on both sides of the corresponding sacrificial structure and are spaced apart from the sacrificial structure.

18. The preparation method according to claim 17, characterized in that: The isolation material layer is patterned to obtain a plurality of sacrificial structures, including: Using the support structure as a mask, etching the isolation material layer to obtain a plurality of sacrificial structures; Preferably, after patterning the isolation material layer to obtain a plurality of sacrificial structures, the method further comprises: Taking a preset mask, placing the substrate and the mask relative to each other so that the support structure is supported on the preset mask, wherein the mask has patterned light-transmitting holes; Using the preset mask to evaporate a third material to form a light-emitting layer of the light-emitting unit located in the first opening, Alternatively, a fourth material is evaporated using the preset mask to form an active layer of the photoelectric sensing unit located in the second opening.

19. A display device, characterized in that: include: A display panel as claimed in any one of claims 1 to 16, or a display panel prepared by the method for preparing a display panel as claimed in any one of claims 17 to 18.

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