Method, device and equipment for detecting defect structure of copper calcium titanate ceramic and medium

Abstract

The invention relates to the technical field of dielectric material performance detection, and discloses a copper calcium titanate ceramic defect structure detection method, device and equipment and a medium, and the method comprises the steps: obtaining the capacitance of copper calcium titanate ceramic under each frequency in a set temperature range; obtaining the electric modulus of the copper calcium titanate ceramic according to the capacitance; obtaining the conductivity of the copper calcium titanate ceramic according to the capacitance; based on the electric modulus, dielectric relaxation peaks are determined, and the dielectric relaxation peaks comprise a first dielectric relaxation peak and a second dielectric relaxation peak; obtaining first activation energy based on the first dielectric relaxation peak and the Arrhenius formula, and obtaining second activation energy based on the second dielectric relaxation peak and the Arrhenius formula; third activation energy is obtained based on the conductivity and the Arrhenius formula; based on the dielectric relaxation peak, the first activation energy, the second activation energy and the third activation energy, the defect structure of the copper calcium titanate ceramic is determined, and the performance change detection of the copper calcium titanate ceramic is realized microcosmically.

Description

Technical Field

[0001] The present application relates to the technical field of dielectric material performance detection, and specifically to a defect structure detection method, device, equipment and medium of copper calcium titanate ceramics. Background Art

[0002] Copper calcium titanate ceramics are a type of dielectric material with a giant dielectric constant, which has a wide range of applications in the fields of miniaturization and intelligence of electronic devices, memory devices, energy storage devices, etc. The key properties of copper calcium titanate ceramics include breakdown field strength, energy storage density, nonlinear coefficient, dielectric constant and dielectric loss, etc. Therefore, it is crucial to regulate the performance of copper calcium titanate ceramics according to their application scenarios.

[0003] Copper calcium titanate ceramics are composed of insulating grain boundaries and semiconducting grains. The giant dielectric properties, varistor properties and dielectric relaxation process are closely related. The defect structures of grains, grain boundaries and near-depletion layer edges will affect key parameters such as macroscopic breakdown field strength, nonlinear coefficient and dielectric loss. There are many methods for improving the performance of copper calcium titanate ceramics in the prior art, such as changing the sintering formula and sintering conditions, doping with different elements, introducing a second phase, etc. However, after improving the performance of copper calcium titanate ceramics, only macroscopic performance changes can be obtained, and the performance evaluation of the improved copper calcium titanate ceramics is not comprehensive enough. Summary of the invention

[0004] The purpose of the embodiments of the present application is to provide a method, device, equipment and medium for detecting defect structures of copper calcium titanate ceramics, so as to solve the problem that the prior art can only achieve macro-level performance improvement of copper calcium titanate ceramics, but the performance evaluation of the improved copper calcium titanate ceramics is not comprehensive enough.

[0005] In order to achieve the above-mentioned object, the first aspect of the present application provides a method for detecting defect structures of copper calcium titanate ceramics, comprising:

[0006] Obtain the capacitance of copper calcium titanate ceramic at various frequencies within a set temperature range;

[0007] According to the capacitance and the first conversion formula for converting the capacitance into the electrical modulus, the electrical modulus of the copper calcium titanate ceramic at the set frequency within the set temperature range is obtained;

[0008] According to the capacitance and a second conversion formula for converting the capacitance into the conductivity, the conductivity of the copper calcium titanate ceramic at the set frequency within the set temperature range is obtained;

[0009] Based on the electric modulus at the set frequency, a dielectric relaxation peak is determined, wherein the dielectric relaxation peak includes a first dielectric relaxation peak in a first frequency range at a first temperature interval within the set temperature range and a second dielectric relaxation peak in a second frequency range at a second temperature interval within the set temperature range, and the first temperature interval is higher than the second temperature interval; based on the first dielectric relaxation peak and the Arrhenius formula, a first activation energy is obtained, and based on the second dielectric relaxation peak and the Arrhenius formula, a second activation energy is obtained;

[0010] Based on the conductivity and Arrhenius formula, the third activation energy is obtained;

[0011] The defect structure of copper calcium titanate ceramics is determined based on the temperature interval in which the dielectric relaxation peak is located within the set temperature range, the first activation energy, the second activation energy and the third activation energy.

[0012] In the embodiment of the present application, it also includes:

[0013] Determine the dielectric relaxation of the copper calcium titanate ceramic within the set temperature range based on the electric modulus at the set frequency, wherein the dielectric relaxation includes a first dielectric relaxation within a first frequency range at a first temperature interval within the set temperature range and a second dielectric relaxation within a second frequency range at a second temperature interval within the set temperature range;

[0014] Based on the first dielectric relaxation, a first dielectric relaxation peak is determined, and based on the second dielectric relaxation, a second dielectric relaxation peak is determined.

[0015] In the embodiment of the present application, the defect structure of the copper calcium titanate ceramic is determined based on the temperature interval in which the dielectric relaxation peak is located in the set temperature range, the first activation energy, the second activation energy and the third activation energy, including:

[0016] When the first dielectric relaxation peak is located in the first set temperature interval, the copper calcium titanate ceramic is determined to be a grain boundary defect structure;

[0017] When the second dielectric relaxation peak is located in the second set temperature interval, the copper calcium titanate ceramic is determined to be a grain defect structure;

[0018] Based on the dielectric relaxation corresponding to the first activation energy, the second activation energy and the third activation energy, it is determined that the copper calcium titanate ceramic is a barrier defect structure.

[0019] In the embodiment of the present application, the first activation energy is 0.501 eV, the second activation energy is 0.150 eV, and the third activation energy is 0.924 eV.

[0020] In the embodiment of the present application, the first conversion formula includes:

[0021] M * =C0 C *-1

[0022] Where M * Indicates the electrical modulus, C 0 Denotes the geometric capacitance, C * Represents capacitance.

[0023] In the embodiment of the present application, the second conversion formula includes:

[0024] Y * =jωC *-1

[0025] Where Y * represents conductance, j represents imaginary unit, and ω represents angular frequency.

[0026] In the embodiment of the present application, the Arrhenius formula includes:

[0027] f M =f 0 exp(-E / kT)

[0028] In the formula, f M represents the frequency of the dielectric relaxation peak, f 0 represents the prefactor, E represents the activation energy, k represents the Boltzmann constant, and T represents the temperature.

[0029] The second aspect of the present application provides a defect structure detection device for copper calcium titanate ceramics, comprising:

[0030] An acquisition module, used to acquire the capacitance of copper calcium titanate ceramic at various frequencies within a set temperature range;

[0031] An electric modulus calculation module, used to obtain the electric modulus of the copper calcium titanate ceramic at a set frequency within a set temperature range according to the capacitance and a first conversion formula for converting the capacitance into the electric modulus;

[0032] A conductance calculation module, used to obtain the conductance of the copper calcium titanate ceramic at a set frequency within a set temperature range according to the capacitance and a second conversion formula for converting the capacitance into the conductance;

[0033] A dielectric relaxation peak determination module, for determining a dielectric relaxation peak based on the electric modulus at the set frequency, wherein the dielectric relaxation peak comprises a first dielectric relaxation peak within a first frequency range at a first temperature interval within the set temperature range and a second dielectric relaxation peak within a second frequency range at a second temperature interval within the set temperature range, the first temperature interval being higher than the second temperature interval;

[0034] A first activation energy and a second activation energy calculation module, used for obtaining a first activation energy based on a first dielectric relaxation peak and an Arrhenius formula, and for obtaining a second activation energy based on a second dielectric relaxation peak and an Arrhenius formula;

[0035] The third activation energy obtaining module is used to obtain the third activation energy based on conductivity and Arrhenius formula;

[0036] The defect structure determination module is used to determine the defect structure of copper calcium titanate ceramics based on the temperature interval in which the dielectric relaxation peak is located in the set temperature range, the first activation energy, the second activation energy and the third activation energy.

[0037] The third aspect of the present application provides a defect structure detection device for copper calcium titanate ceramics, comprising:

[0038] a memory configured to store instructions; and

[0039] The processor is configured to call instructions from the memory and implement the defect structure detection method of copper calcium titanate ceramics of the first aspect when executing the instructions.

[0040] A fourth aspect of the present application provides a machine-readable storage medium having instructions stored thereon, the instructions being used to enable a machine to execute the defect structure detection method for copper calcium titanate ceramics as described in the first aspect above.

[0041] Through the above technical solution, the defect structure detection method of copper calcium titanate ceramics provided in the embodiment of the present application has the following beneficial effects:

[0042] The electric modulus and conductance are obtained by capacitance conversion of copper calcium titanate ceramics at various frequencies within a set temperature range, the dielectric relaxation peak is obtained based on the electric modulus, the first activation energy and the second activation energy are obtained by combining the Arrhenius formula with the dielectric relaxation peak, and the third activation energy is obtained by using the conductance. The defect structure of copper calcium titanate ceramics is determined by the temperature range of the first activation energy and the second activation energy and the third activation energy, so as to realize the defect structure analysis of copper calcium titanate ceramics at the microscopic level, further understand the microscopic intrinsic mechanism of the performance change of copper calcium titanate ceramics during the improvement process, and provide strong theoretical support for further optimizing the performance of copper calcium titanate ceramics.

[0043] Other features and advantages of the embodiments of the present application will be described in detail in the subsequent specific implementation section. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] The accompanying drawings are used to provide a further understanding of the embodiments of the present application and constitute a part of the specification. Together with the following specific implementations, they are used to explain the embodiments of the present application, but do not constitute a limitation on the embodiments of the present application. In the accompanying drawings:

[0045] Figure 1 A schematic diagram of a defect structure detection method of copper calcium titanate ceramics according to an embodiment of the present application is schematically shown;

[0046] Figure 2 A schematic diagram schematically shows the change of capacitance with frequency within a set temperature range according to an embodiment of the present application;

[0047] Figure 3 A schematic diagram showing the change of the electric modulus with frequency within a set temperature range according to an embodiment of the present application is shown;

[0048] Figure 4 A schematic diagram of dielectric relaxation of conductivity varying with frequency within a set temperature range according to an embodiment of the present application is schematically shown;

[0049] Figure 5 A schematic diagram of a first dielectric relaxation according to an embodiment of the present application is shown;

[0050] Figure 6 A second dielectric relaxation diagram according to an embodiment of the present application is schematically shown;

[0051] Figure 7 A schematic diagram of a linear fitting of dielectric relaxation corresponding to the first activation energy and the second activation energy according to an embodiment of the present application is schematically shown;

[0052] Figure 8 A schematic diagram of a linear fitting of dielectric relaxation corresponding to the third activation energy according to an embodiment of the present application is shown schematically. DETAILED DESCRIPTION

[0053] In order to make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. It should be understood that the specific implementation methods described herein are only used to illustrate and explain the embodiments of the present application, and are not used to limit the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0054] It should be noted that the acquisition, transmission, storage, use, and processing of data in the technical solution of this application are in compliance with the relevant provisions of national laws and regulations. In the embodiments of this application, some existing solutions in the industry such as certain software, components, and models may be mentioned, which should be considered as exemplary. Their purpose is only to illustrate the feasibility of implementing the technical solution of this application, but it does not mean that the applicant has or will necessarily use the solution.

[0055] It should be noted that if the embodiments of the present application involve directional indications (such as up, down, left, right, front, back...), the directional indications are only used to explain the relative position relationship, movement status, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0056] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present application, the descriptions of "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or suggesting their relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by this application.

[0057] In order to better illustrate a defect structure detection method of copper calcium titanate ceramics provided in an embodiment of the present application, a brief description of the prior art is given.

[0058] After optimizing and improving the performance of copper calcium titanate ceramics, the existing technology can only directly observe the performance changes of copper calcium titanate ceramics at the macro level, such as the improvement of hardness, conductivity or heat resistance. However, this evaluation method based only on a macroscopic perspective has certain limitations because it ignores the changes in the structure and properties of copper calcium titanate ceramics at the microscopic scale, which also have a crucial impact on the overall performance of copper calcium titanate ceramics.

[0059] Specifically, the microstructure of copper calcium titanate ceramics, such as grain size, grain boundary characteristics, and internal defects, is likely to have undergone subtle changes during the improvement process, and these changes may not be accurately captured by simple macroscopic tests. For example, the refinement of grain size may significantly improve the strength and toughness of copper calcium titanate ceramics, while the optimization of grain boundaries may help improve the stability and durability of copper calcium titanate ceramics.

[0060] Based on the above technical defects, the present application embodiment provides a method for detecting defective structures of copper calcium titanate ceramics. Figure 1 As shown, Figure 1 The schematic diagram of the process of a method for detecting defective structure of copper calcium titanate ceramics according to an embodiment of the present application is schematically shown. The embodiment of the present application provides a method for detecting defective structure of copper calcium titanate ceramics, which may include the following steps.

[0061] Step S110: obtaining the capacitance of copper calcium titanate ceramic at various frequencies within a set temperature range;

[0062] Step S120: obtaining the electric modulus of the copper calcium titanate ceramic at a set frequency within a set temperature range according to the capacitance and a first conversion formula for converting the capacitance into the electric modulus;

[0063] Step S130: obtaining the conductivity of the copper calcium titanate ceramic at a set frequency within a set temperature range according to the capacitance and a second conversion formula for converting the capacitance into the conductivity;

[0064] Step S140: determining a dielectric relaxation peak based on the electric modulus at the set frequency, wherein the dielectric relaxation peak includes a first dielectric relaxation peak in a first frequency range at a first temperature interval within the set temperature range and a second dielectric relaxation peak in a second frequency range at a second temperature interval within the set temperature range, and the first temperature interval is higher than the second temperature interval;

[0065] Step S150: obtaining a first activation energy based on the first dielectric relaxation peak and the Arrhenius formula, and obtaining a second activation energy based on the second dielectric relaxation peak and the Arrhenius formula;

[0066] Step S160: obtaining a third activation energy based on the conductivity and the Arrhenius formula;

[0067] Step S170: determining the defect structure of the copper calcium titanate ceramic based on the temperature interval in which the dielectric relaxation peak is located within the set temperature range, the first activation energy, the second activation energy and the third activation energy.

[0068] The embodiment of the present application provides a method for detecting defect structures of copper calcium titanate ceramics, which can be implemented based on a Novocontrol series broadband dielectric spectrometer or other dielectric parameter testing equipment.

[0069] In step S110, the temperature range is set to -160°C to 200°C and the frequency range is set to 10 -1 Hz~10 7 Hz, the copper calcium titanate ceramics with a set temperature range of -160℃~200℃ were obtained in the frequency range of 10 -1 Hz~10 7 The real part of capacitance at Hz is Figure 2 As shown, Figure 2 The schematic diagram of the change of capacitance with frequency within the set temperature range according to the embodiment of the present application is schematically shown, wherein 20° C. is used as the temperature interval value to select the set temperature within the set temperature range.

[0070] In step S120, according to the real part of the capacitance and the first conversion formula for converting the real part of the capacitance into the imaginary part of the electric modulus, the copper calcium titanate ceramic with a set temperature range of -160°C to 200°C and a frequency range of 10 -1 Hz~10 7 The imaginary part of the electric modulus under Hz is Figure 3 As shown, Figure 3 The schematic diagram schematically shows the change of the electric modulus with frequency within a set temperature range according to an embodiment of the present application.

[0071] The first conversion formula includes:

[0072] M * =C 0 C *-1

[0073] Where M * Represents the imaginary part of the electric modulus, C 0 represents the geometric capacitance of copper calcium titanate ceramic, C * represents the real part of capacitance.

[0074] In step S130, based on the real part of capacitance and the second conversion formula for converting the real part of capacitance into the real part of conductance, the copper calcium titanate ceramic with a set temperature range of -160°C to 200°C and a frequency range of 10 -1 Hz~10 7 The real part of the conductivity at Hz is Figure 4 As shown, Figure 4 The schematic diagram of dielectric relaxation of conductivity varying with frequency within a set temperature range according to an embodiment of the present application is schematically shown.

[0075] The second conversion formula includes:

[0076] Y * =jωC *-1

[0077] Where Y * represents the real part of conductance, j represents the imaginary unit, and ω represents the angular frequency.

[0078] In step S140, the dielectric relaxation peak of the embodiment of the present application refers to the peak value that appears when the imaginary part of the electric modulus changes with the frequency in dielectric relaxation, which is an important indicator of the change in the polarization state of copper calcium titanate ceramics under the action of an electric field. The first temperature range is -100℃~-20℃, and the second temperature range is -160℃~-80℃. The first temperature range and the second temperature range are both set at 20℃ as the temperature interval value. The first frequency range is 10 -1 Hz~10 5 Hz, the second frequency range is 10 1 Hz~10 7Hz.

[0079] In step S150, based on at least five temperatures T where the first dielectric relaxation peak and the second dielectric relaxation peak coexist, the frequencies f of the first dielectric relaxation peak and the second dielectric relaxation peak are determined. A first image with a ordinate of lnf and abscissa of 1000 / T is plotted. The first image is as shown in FIG. Figure 7 As shown, Figure 7 The linear fitting schematic diagram of dielectric relaxation corresponding to the first activation energy and the second activation energy according to the embodiment of the present application is schematically shown. After the linear fitting, the first activation energy obtained according to the Arrhenius formula is 0.501 eV, and the second activation energy is 0.150 eV, wherein the Arrhenius formula is:

[0080] f M =f 0 exp(-E / kT)

[0081] In the formula, f M represents the frequency of the dielectric relaxation peak, f 0 represents the prefactor, E represents the activation energy, k represents the Boltzmann constant, and T represents the temperature.

[0082] In step S160, based on the real part Y of the conductance with the lowest frequency at the highest five temperatures T within the set temperature range, m , draw the vertical coordinate as lnY m and a second image with a horizontal coordinate of 1000 / T. The second image is Figure 8 As shown, Figure 8 A schematic diagram of a linear fitting of dielectric relaxation corresponding to the third activation energy according to an embodiment of the present application is schematically shown. After linear fitting, the third activation energy obtained according to the Arrhenius formula is 0.924 eV.

[0083] In step S170, the defect structure of the copper calcium titanate ceramic can be inferred based on the temperature interval of the set temperature range in which the dielectric relaxation peak appears and the first activation energy, the second activation energy and the third activation energy.

[0084] A defect structure detection method for copper calcium titanate ceramics provided in an embodiment of the present application, within a set temperature range, by converting the capacitance of copper calcium titanate ceramics at various frequencies, its electric modulus and conductance are calculated. Based on the electric modulus, the dielectric relaxation relaxation peak can be further obtained. Subsequently, the Arrhenius formula is combined with the data of the dielectric relaxation relaxation peak to obtain the first activation energy and the second activation energy. At the same time, combined with the conductance, the third activation energy can be determined. The temperature interval, the first activation energy, the second activation energy and the third activation energy of the dielectric relaxation relaxation peak in the set temperature range are used as the basis for judging the defect structure of copper calcium titanate ceramics. Thus, the defect structure of copper calcium titanate ceramics is accurately analyzed from a microscopic level, which not only deepens the understanding of the microscopic mechanism of copper calcium titanate ceramics in the process of performance improvement, but also lays a solid theoretical foundation for further optimizing the performance of copper calcium titanate ceramics in the future.

[0085] In an optional implementation, step S170 includes:

[0086] Step S171: when the first dielectric relaxation peak is located in the first set temperature range, determining that the copper calcium titanate ceramic is a grain boundary defect structure;

[0087] Step S172: when the second dielectric relaxation peak is located in the second set temperature range, determining that the copper calcium titanate ceramic is a grain defect structure;

[0088] Step S173: determining that the copper calcium titanate ceramic is a barrier defect structure based on the dielectric relaxation corresponding to the first activation energy, the second activation energy, and the third activation energy.

[0089] In step S171, the first set temperature range is -100°C to -20°C. When the first dielectric relaxation peak is located in the temperature range of -100°C to -20°C, the copper calcium titanate ceramic has a grain boundary defect structure.

[0090] In step S172, the second set temperature interval is greater than 100°C. When the first dielectric relaxation peak is located in the temperature interval greater than 100°C, the copper calcium titanate ceramic has a grain defect structure.

[0091] In step S173, if Figure 7 As shown in the figure, the dielectric relaxation corresponding to the first activation energy and the dielectric relaxation corresponding to the second activation energy, copper calcium titanate ceramics are barrier defect structures. Figure 8 As shown, the dielectric relaxation corresponding to the third activation energy, copper calcium titanate ceramics is a barrier defect structure.

[0092] In an optional implementation, the method further includes:

[0093] Step S210: determining the dielectric relaxation of the copper calcium titanate ceramic within the set temperature range based on the electric modulus at the set frequency, wherein the dielectric relaxation includes a first dielectric relaxation within a first frequency range at a first temperature interval within the set temperature range and a second dielectric relaxation within a second frequency range at a second temperature interval within the set temperature range, wherein the first temperature interval is higher than the second temperature interval;

[0094] Step S220: determining a first dielectric relaxation peak based on the first dielectric relaxation, and determining a second dielectric relaxation peak based on the second dielectric relaxation.

[0095] In step S210, dielectric relaxation refers to the process in which the copper calcium titanate ceramic reaches a new polarization equilibrium state from an instantaneously established polarization state after the external electric field is applied (or removed). The first dielectric relaxation in the first frequency range at the first temperature interval within the set temperature range is as follows: Figure 5 As shown, Figure 5 The schematic diagram of the first dielectric relaxation according to the embodiment of the present application is shown schematically, and the horizontal axis corresponds to the first frequency range. The second dielectric relaxation in the second frequency range at the second temperature interval within the set temperature range is as follows: Figure 6 As shown, Figure 6 A second dielectric relaxation diagram according to an embodiment of the present application is schematically shown, and the abscissa corresponds to the second frequency range.

[0096] In step S220, the peak value of the imaginary part of the electric modulus in the first dielectric relaxation as the frequency changes is the first dielectric relaxation peak, and the peak value of the imaginary part of the electric modulus in the second dielectric relaxation as the frequency changes is the second dielectric relaxation peak.

[0097] Corresponding to the defect structure detection method of copper calcium titanate ceramics provided in the embodiment of the present application, the embodiment of the present application also provides a defect structure detection device of copper calcium titanate ceramics, including:

[0098] An acquisition module, used to acquire the capacitance of copper calcium titanate ceramic at various frequencies within a set temperature range;

[0099] An electric modulus calculation module, used to obtain the electric modulus of the copper calcium titanate ceramic at a set frequency within a set temperature range according to the capacitance and a first conversion formula for converting the capacitance into the electric modulus;

[0100] A conductance calculation module, used to obtain the conductance of the copper calcium titanate ceramic at a set frequency within a set temperature range according to the capacitance and a second conversion formula for converting the capacitance into the conductance;

[0101] A dielectric relaxation peak determination module, for determining a dielectric relaxation peak based on the electric modulus at a set frequency, wherein the dielectric relaxation peak includes a first dielectric relaxation peak within a first frequency range at a first temperature interval within a set temperature range and a second dielectric relaxation peak within a second frequency range at a second temperature interval within the set temperature range, and the first temperature interval is higher than the second temperature interval;

[0102] A first activation energy and a second activation energy calculation module, used for obtaining a first activation energy based on a first dielectric relaxation peak and an Arrhenius formula, and for obtaining a second activation energy based on a second dielectric relaxation peak and an Arrhenius formula;

[0103] The third activation energy obtaining module is used to obtain the third activation energy based on conductivity and Arrhenius formula;

[0104] The defect structure determination module is used to determine the defect structure of copper calcium titanate ceramics based on the temperature interval in which the dielectric relaxation peak is located in the set temperature range, the first activation energy, the second activation energy and the third activation energy.

[0105] It can be understood that the defect structure detection device of copper calcium titanate ceramics provided in the embodiment of the present application can implement each process of the defect structure detection method of copper calcium titanate ceramics in the above embodiment, and can achieve the same technical effect. To avoid repetition, it will not be repeated here.

[0106] The embodiment of the present application also provides a defect structure detection device for copper calcium titanate ceramics, comprising:

[0107] a memory configured to store instructions; and

[0108] The processor is configured to call instructions from the memory and implement the above-mentioned defect structure detection method of copper calcium titanate ceramics when executing the instructions. And can achieve the same technical effect, to avoid repetition, it will not be repeated here.

[0109] The embodiment of the present application also provides a machine-readable storage medium, which stores instructions for causing a machine to execute the above-mentioned method for detecting defective structures of copper calcium titanate ceramics. The same technical effect can be achieved, and to avoid repetition, it will not be described here.

[0110] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment or an embodiment in combination with software and hardware. Moreover, the present application may adopt the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) that contain computer-usable program code.

[0111] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0112] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0113] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0114] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.

[0115] The memory may include non-permanent memory in a computer-readable medium, random access memory (RAM) and / or non-volatile memory in the form of read-only memory (ROM) or flash RAM. The memory is an example of a computer-readable medium.

[0116] Computer readable media include permanent and non-permanent, removable and non-removable media that can be implemented by any method or technology to store information. Information can be computer readable instructions, data structures, program modules or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, compact disk read-only memory (CD-ROM), digital versatile disk (DVD) or other optical storage, magnetic cassettes, magnetic disk storage or other magnetic storage devices or any other non-transmission media that can be used to store information that can be accessed by a computing device. As defined herein, computer readable media does not include temporary computer readable media (transitory media), such as modulated data signals and carrier waves.

[0117] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0118] The above are only embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included within the scope of the claims of the present application.

Claims

1. A method for detecting defect structures of copper calcium titanate ceramics, characterized in that: include: Obtaining the capacitance of the copper calcium titanate ceramic at various frequencies within a set temperature range; According to the capacitance and a first conversion formula for converting the capacitance into an electrical modulus, obtaining the electrical modulus of the copper calcium titanate ceramic at a set frequency within the set temperature range; According to the capacitance and a second conversion formula for converting the capacitance into conductance, the conductance of the copper calcium titanate ceramic at the set frequency within the set temperature range is obtained; Based on the electric modulus at the set frequency, a dielectric relaxation peak is determined, wherein the dielectric relaxation peak includes a first dielectric relaxation peak in a first frequency range at a first temperature interval within the set temperature range and a second dielectric relaxation peak in a second frequency range at a second temperature interval within the set temperature range, and the first temperature interval is higher than the second temperature interval; Based on the first dielectric relaxation peak and the Arrhenius formula, a first activation energy is obtained, and based on the second dielectric relaxation peak and the Arrhenius formula, a second activation energy is obtained; Based on the conductivity and the Arrhenius equation, a third activation energy is obtained; The defect structure of the copper calcium titanate ceramic is determined based on the temperature interval in which the dielectric relaxation peak is located within the set temperature range, the first activation energy, the second activation energy, and the third activation energy.

2. The method according to claim 1, characterized in that Also includes: Determine the dielectric relaxation of the copper calcium titanate ceramic within the set temperature range based on the electric modulus at the set frequency, wherein the dielectric relaxation includes a first dielectric relaxation within the first frequency range at a first temperature interval within the set temperature range and a second dielectric relaxation within the second frequency range at a second temperature interval within the set temperature range; The first dielectric relaxation peak is determined based on the first dielectric relaxation, and the second dielectric relaxation peak is determined based on the second dielectric relaxation.

3. The method according to claim 2, characterized in that The step of determining the defect structure of the copper calcium titanate ceramic based on the dielectric relaxation peak being located in the temperature interval of the set temperature range, the first activation energy, the second activation energy, and the third activation energy comprises: When the first dielectric relaxation peak is located in a first set temperature interval, determining that the copper calcium titanate ceramic is a grain boundary defect structure; When the second dielectric relaxation peak is located in a second set temperature interval, determining that the copper calcium titanate ceramic is a grain defect structure; Based on the dielectric relaxation corresponding to the first activation energy, the second activation energy, and the third activation energy, it is determined that the copper calcium titanate ceramic is a barrier defect structure.

4. The method according to claim 3, characterized in that The first activation energy is 0.501 eV, the second activation energy is 0.150 eV, and the third activation energy is 0.924 eV.

5. The method according to claim 1, characterized in that The first conversion formula includes: M * =C0C *-1 Where M * represents the electrical modulus, C0 represents the geometric capacitance, C * represents the capacitance.

6. The method according to claim 1, characterized in that The second conversion formula includes: Y * =jωC *-1 Where Y * denotes the conductance, j denotes an imaginary unit, and ω denotes an angular frequency.

7. The method according to claim 1, characterized in that The Arrhenius formula includes: f M =f0exp(-E / kT) In the formula, f M represents the frequency of the dielectric relaxation peak, f0 represents the prefactor, E represents the activation energy, k represents the Boltzmann constant, and T represents the temperature.

8. A defect structure detection device for copper calcium titanate ceramics, characterized in that: include: An acquisition module, used to acquire the capacitance of the copper calcium titanate ceramic at various frequencies within a set temperature range; An electric modulus calculation module, used to obtain the electric modulus of the copper calcium titanate ceramic at a set frequency within the set temperature range according to the capacitance and a first conversion formula for converting the capacitance into the electric modulus; a conductance calculation module, configured to obtain the conductance of the copper calcium titanate ceramic within the set temperature range at the set frequency according to the capacitance and a second conversion formula for converting the capacitance into conductance; A dielectric relaxation peak determination module, for determining a dielectric relaxation peak based on the electric modulus at the set frequency, wherein the dielectric relaxation peak comprises a first dielectric relaxation peak within a first frequency range at a first temperature interval within the set temperature range and a second dielectric relaxation peak within a second frequency range at a second temperature interval within the set temperature range, the first temperature interval being higher than the second temperature interval; A first activation energy and a second activation energy calculation module, used for obtaining a first activation energy based on the first dielectric relaxation peak and the Arrhenius formula, and for obtaining a second activation energy based on the second dielectric relaxation peak and the Arrhenius formula; A third activation energy obtaining module, used for obtaining a third activation energy based on the conductivity and the Arrhenius formula; The defect structure determination module is used to determine the defect structure of the copper calcium titanate ceramic based on the temperature interval in which the dielectric relaxation peak is located in the set temperature range, the first activation energy, the second activation energy and the third activation energy.

9. A defect structure detection device for copper calcium titanate ceramics, characterized in that: include: a memory configured to store instructions; as well as A processor is configured to call the instructions from the memory and implement the defect structure detection method of copper calcium titanate ceramics according to any one of claims 1 to 7 when executing the instructions.

10. A machine-readable storage medium, characterized in that: The machine-readable storage medium stores instructions for enabling a machine to execute the defect structure detection method for copper calcium titanate ceramics according to any one of claims 1 to 7.

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