Substrate peeling apparatus, substrate peeling method, and semiconductor device manufacturing method

Abstract

The embodiment relates to a substrate peeling apparatus, a substrate peeling method, and a method of manufacturing a semiconductor device. According to one embodiment, there is provided a substrate peeling apparatus having an adsorption stage and a light source. A bonded body of a plurality of substrates is adsorbed on an adsorption table. The suction table includes a first region and a second region. The second region is closer to the inner side than the first region. The light source is capable of sequentially irradiating the laser light toward the first region and the second region. In the suction table, the suction force of the bonded body in the second region is weaker than the suction force of the bonded body in the first region.

Description

[0001] Related Application:

[0002] This application claims priority based on Japanese Patent Application No. 2023-150344 (filing date: September 15, 2023). The present application incorporates all the contents of the basic application by reference. Technical Field

[0003] The present embodiment relates to a substrate peeling apparatus, a substrate peeling method, and a method for manufacturing a semiconductor device. Background Art

[0004] When manufacturing a semiconductor device, two substrates are sometimes bonded, and then one of the two substrates is peeled off by irradiating a laser (laser peeling). In a substrate peeling device that performs the laser peeling, it is desirable to peel the substrate appropriately. Summary of the invention

[0005] According to one embodiment, a substrate peeling device having an adsorption platform and a light source is provided. A bonded body of multiple substrates is adsorbed on the adsorption platform. The adsorption platform includes a first region and a second region. The second region is closer to the inside than the first region. The light source can irradiate laser toward the first region and the second region in sequence. In the adsorption platform, the adsorption force of the bonded body in the second region is weaker than the adsorption force of the bonded body in the first region.

[0006] One embodiment provides a substrate peeling apparatus, a substrate peeling method, and a method for manufacturing a semiconductor device that can appropriately peel a substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 It is a diagram showing a schematic configuration of a substrate peeling device according to the first embodiment.

[0008] Figure 2 It is a cross-sectional view showing the structure of the adsorption stage in the first embodiment.

[0009] Figure 3 It is a plan view showing the structure of the adsorption stage in the first embodiment.

[0010] Figure 4 It is an enlarged cross-sectional view showing the structure near the center of the adsorption stage in the first embodiment.

[0011] Figure 5 It is an enlarged plan view showing the structure near the center of the adsorption stage in the first embodiment.

[0012] Figure 6 This is a flowchart showing a method for manufacturing a semiconductor device in a modification of the first embodiment.

[0013] Figure 7 It is a cross-sectional view showing a method for manufacturing a semiconductor device in a modification of the first embodiment.

[0014] Figure 8 It is an enlarged cross-sectional view showing a method for manufacturing a semiconductor device in a modification of the first embodiment.

[0015] Fig. 9 It is a cross-sectional view showing a method for manufacturing a semiconductor device in a modification of the first embodiment.

[0016] Fig.10 It is an enlarged cross-sectional view showing a method for manufacturing a semiconductor device in a modification of the first embodiment.

[0017] Fig.11 It is a plan view showing a method for manufacturing a semiconductor device in a modification of the first embodiment.

[0018] Fig.12 It is a cross-sectional view showing a method for manufacturing a semiconductor device in a modification of the first embodiment.

[0019] Fig.13 It is a cross-sectional view showing a method for manufacturing a semiconductor device in a modification of the first embodiment.

[0020] Fig.14 It is a cross-sectional view showing relaxation of stress in a modification of the first embodiment.

[0021] Fig.15 It is an enlarged cross-sectional view showing relaxation of stress in a modification of the first embodiment.

[0022] Fig.16 It is a cross-sectional view showing a method for manufacturing a semiconductor device in a modification of the first embodiment.

[0023] Fig.17 It is an enlarged cross-sectional view showing a method for manufacturing a semiconductor device in a modification of the first embodiment.

[0024] Fig.18 It is a diagram showing a schematic configuration of a substrate peeling device according to a second embodiment.

[0025] Fig.19 It is a cross-sectional view showing the structure of the adsorption stage in the second embodiment.

[0026] Fig. 20 It is a plan view showing the structure of the adsorption stage in the second embodiment.

[0027] Fig.21 It is a cross-sectional view showing the structure of the central area in the second embodiment.

[0028] Fig. 22 It is an enlarged plan view showing the structure of the central area in the second embodiment.

[0029] Fig.23 It is a cross-sectional view showing relaxation of stress in a modification of the second embodiment.

[0030] Fig.24 It is an enlarged cross-sectional view showing relaxation of stress in a modification of the second embodiment.

[0031] Fig.25 It is a plan view showing a method for manufacturing a semiconductor device in the third embodiment.

[0032] Fig.26 It is a cross-sectional view showing a method for manufacturing a semiconductor device in the third embodiment.

[0033] Description of reference numerals:

[0034] 1. 401. 501 substrate peeling device, 10. 410. 510 adsorption table, 21 light source. DETAILED DESCRIPTION

[0035] Hereinafter, the substrate peeling device according to the embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to these embodiments.

[0036] (First embodiment)

[0037] The substrate peeling apparatus according to the first embodiment is used to peel off one of two bonded substrates in manufacturing a semiconductor device by irradiation with laser light (laser peeling), and implements means for appropriately peeling off the substrate.

[0038] The substrate peeling device 1 can be as follows Figure 1 The composition shown. Figure 1 It is a diagram showing a schematic configuration of the substrate peeling apparatus 1 .

[0039] The substrate peeling device 1 includes an adsorption stage 10, a laser module 20, a driving mechanism 30, a driving mechanism 40, an exhaust device 50, and a controller 60. Hereinafter, a direction perpendicular to the bottom surface 10b of the adsorption stage 10 is defined as a Z direction, and two directions orthogonal to each other in a plane perpendicular to the Z direction are defined as an X direction and a Y direction.

[0040] The controller 60 controls the respective parts of the substrate peeling apparatus 1 in an integrated manner.

[0041] Adsorption station 10 Figure 2 to Figure 5 As shown, the structure is capable of adsorbing the bonded body CB. Figure 2 It is a YZ cross-sectional view showing the structure of the adsorption stage 10 . Figure 3It is an XY plane view showing the structure of the adsorption stage 10. Figure 2 The YZ section view corresponds to Figure 3 Cross section taken along line BB. Figure 4 is a YZ enlarged cross-sectional view showing the structure near the center of the adsorption platform 10, corresponding to Figure 2 Enlarged YZ cross-sectional view of part A. Figure 5 is an XY enlarged plan view showing the structure near the center of the adsorption platform 10, corresponding to Figure 3 Enlarged plan view of section C.

[0042] The adsorption stage 10 includes a region RG1 and a region RG2. The region RG2 is located inside the region RG1 in the XY direction.

[0043] The adsorption platform 10 has an adsorption surface 10a and a bottom surface 10b. The adsorption surface 10a is a surface on the +Z side of the adsorption platform 10. The adsorption surface 10a extends along the approximate XY direction. Although the adsorption surface 10a is approximately flat, it is slightly raised near the center. The bottom surface 10b is a surface on the opposite side (-Z side) of the adsorption platform 10 to the adsorption surface 10a. The bottom surface 10b extends along the XY direction. The bottom surface 10b is approximately flat.

[0044] The bonded body CB is adsorbed on the adsorption surface 10a. The adsorption platform 10 can also form a reduced pressure atmosphere between the bonded body CB and the adsorption platform 10, thereby adsorbing the bonded body CB to the adsorption surface 10a. The reduced pressure atmosphere refers to an atmosphere with a pressure of 10Pa or less. The bonded body CB is formed by stacking a plurality of substrates SB1 and SB2 and bonding them to each other. Figure 2 , the state where the bonding body CB is adsorbed on the adsorption surface 10a of the adsorption stage 10 is illustrated. The bonding body CB may also be substantially circular in XY plan view. Correspondingly, the adsorption surface 10a may also be substantially circular in XY plan view.

[0045] The adsorption surface 10a includes a flat surface 10a1 and a convex surface 10a2. The flat surface 10a1 is arranged in the region RG1. The convex surface 10a2 is arranged in the region RG2. The convex surface 10a2 is arranged to be closer to the inside than the flat surface 10a1 in the XY direction. In the adsorption stage 10, the height H2 of the convex surface 10a2 from the bottom surface 10b is higher than the height H1 of the flat surface 10a1 from the bottom surface 10b (refer to Figure 2 ). The flat surface 10a1 extends flatly in the XY direction, and the convex surface 10a2 bulges toward the +Z side from the flat surface 10a1 and extends substantially in the XY direction.

[0046] Thus, when the bonded body CB is adsorbed, under the condition that the tensile stress from the bonded body CB to the adsorption platform 10 acts on the adsorption surface 10a, the compressive stress from the adsorption platform 10 to the bonded body CB can be selectively applied to the vicinity of the convex surface 10a2. As a result, in the adsorption platform 10, the adsorption force of the bonded body CB in the region RG2 can be made weaker than the adsorption force of the bonded body CB in the region RG1.

[0047] The adsorption stage 10 further includes a plurality of support columns 11 , a plurality of support columns 12 , a base 13 , a partition wall 18 , a support member 14 , a plurality of lifting columns 15 , and a plurality of frames 16 .

[0048] The base 13 has a main surface 13a and a bottom surface 13b. The main surface 13a is the surface on the +Z side of the base 13. The main surface 13a extends along the approximate XY direction. The main surface 13a is approximately flat, but slightly raised near the center. The main surface 13a can also be approximately circular when viewed from above in XY. The bottom surface 13b is the surface on the opposite side (-Z side) of the main surface 13a in the base 13. The bottom surface 13b extends along the XY direction. The bottom surface 13b is approximately flat. The bottom surface 13b can also be the same as the bottom surface 10b of the adsorption platform 10.

[0049] The main surface 13a is located on the -Z side of the suction surface 10a. The main surface 13a may extend substantially in the XY direction along the suction surface 10a. The Z interval between the main surface 13a and the suction surface 10a may be substantially constant.

[0050] The main surface 13a includes a flat surface 13a1 and a convex surface 13a2. The flat surface 13a1 is arranged in the region RG1. The convex surface 13a2 is arranged in the region RG2. The convex surface 13a2 is arranged to be closer to the inside than the flat surface 13a1 in the XY direction. The height of the convex surface 13a2 from the bottom surface 13b can also be higher than the height of the flat surface 13a1 from the bottom surface 13b. The flat surface 13a1 extends flatly in the XY direction, and the convex surface 13a2 bulges from the flat surface 13a1 to the +Z side and extends approximately in the XY direction. That is, the flat surface 13a1 and the convex surface 13a2 of the main surface 13a extend corresponding to the flat surface 10a1 and the convex surface 10a2 of the adsorption surface 10a, respectively. As a result, the Z interval between the main surface 13a and the adsorption surface 10a can be made approximately constant.

[0051] The base 13 has a main body 131 and a convex portion 1311. The main body 131 is a substantially flat plate-shaped member, and extends substantially flat in the XY direction in the region RG1 and the region RG2. The main body 131 may be substantially circular in an XY plan view.

[0052] The convex part 1311 is a convex member, and is arranged on the +Z side of the main body part 131 in the region RG2. The convex part 1311 may cover the main body part 131 from the +Z side in the region RG2. The convex part 1311 may be integrated with the main body part 131. The convex part 1311 may be substantially circular in an XY plan view.

[0053] The portion of the surface on the +Z side of the main body 131 that is not covered by the convex portion 1311 and the surface on the +Z side of the convex portion 1311 form the main surface 13a of the base 13. The surface on the -Z side of the main body 131 forms the bottom surface 13b of the base. The upper surface of the portion of the surface on the +Z side of the main body 131 that is not covered by the convex portion 1311 is the main flat surface 13a1, and the upper surface on the +Z side of the convex portion 1311 is the convex surface 13a2.

[0054] The partition wall 18 is arranged on the outer periphery of the flat surface 13a1 in the main surface 13a. The partition wall 18 extends in a ring shape along the outer periphery in the main body portion 131. The partition wall portion 133 protrudes from the outer periphery in the main surface 13a to the +Z side.

[0055] Surrounded by the main surface 13 a and the partition walls 18 , a concave space is formed on the +Z side of the base 13 .

[0056] The concave space SP1 is formed by being surrounded by the flat surface 13a1 and the partition wall 18, and the concave space SP2 is formed by being surrounded by the convex surface 13a2 and the partition wall 18. The concave space SP1 is recessed from the adsorption surface 10a to the -Z side in the region RG1. The flat surface 13a1 forms the bottom surface of the concave space SP1. The concave space SP2 is recessed from the adsorption surface 10a to the -Z side in the region RG2. The convex surface 13a2 forms the bottom surface of the concave space SP2.

[0057] The plurality of support pins 11 are arranged in the concave space SP1 in the region RG1. The plurality of support pins 11 are arranged on the flat surface 13a1. Each support pin 11 protrudes from the flat surface 13a1 in the Z direction. Thus, when the bonded body CB is adsorbed to the adsorption surface 10a, each support pin 11 can support the bonded body CB from the -Z side in the region RG1.

[0058] The Z heights h11 of the plurality of support pillars 11 may be equal to each other. The Z heights h11 of the support pillars 11 may be equal to the Z height of the partition wall 18. The Z heights h11 of the support pillars 11 may be, for example, 1 to 10 μm. The plurality of support pillars 11 are arranged in the XY direction in the region RG1. The X-direction arrangement pitch P between the plurality of support pillars 11 is X The X-direction arrangement pitch P between a pair of support posts 11 may be equal to each other. X The Y-direction arrangement pitch P between the plurality of support posts 11 may be, for example, 1 to 5 mm. YThe Y-direction arrangement pitch P between a pair of support posts 11 may be equal to each other. Y For example, it may be 1 to 5 mm. The top surfaces of the plurality of support pillars 11 form a flat surface 10a1.

[0059] A plurality of support posts 12 are arranged in the concave space SP2 in the region RG2. The bottom surface of the concave space SP2 is higher than the bottom surface of the concave space SP1 due to the influence of the convex portion 1311. A plurality of support posts 12 are arranged on the convex surface 13a2. Each support post 12 protrudes from the convex surface 13a2 in the Z direction. Thus, when the bonded body CB is adsorbed on the adsorption surface 10a, each support post 12 can support the bonded body CB from the -Z side in the region RG2.

[0060] The Z heights h12 of the plurality of support pillars 12 may be equal to each other. The Z heights h12 of the support pillars 12 may be equal to the Z heights of the partition walls 18. The Z heights h12 of the support pillars 12 may be, for example, 1 to 10 μm. The plurality of support pillars 12 are arranged in the XY direction in the region RG2. The X-direction arrangement pitch P between the plurality of support pillars 12 is X The X-direction arrangement pitch P between a pair of support posts 12 may be equal to each other. X The Y-direction arrangement pitch P between the plurality of support posts 12 may be, for example, 1 to 5 mm. Y The Y-direction arrangement pitch P between a pair of support posts 12 may be equal to each other. Y For example, it may be 1 to 5 mm. The top surfaces of the plurality of support pillars 12 form convex surfaces 10a2.

[0061] In the main surface 13a, the convex surface 13a2 may bulge toward the +Z side from the flat surface 13a1 in a curved shape, or may bulge toward the +Z side from the flat surface 13a1 in a cylindrical shape, or may bulge toward the +Z side from the flat surface 13a1 in a prism shape, or may bulge toward the +Z side from the flat surface 13a1 in a conical shape, or may bulge toward the +Z side from the flat surface 13a1 in a pyramidal shape. Figure 1 , Figure 2 In FIG. 1 , a configuration is illustrated in which the convex surface 13 a 2 rises from the flat surface 13 a 1 in a curved shape.

[0062] The Z height h131 of the convex surface 13a2 from the flat surface 13a1 may be, for example, 1 to 10 μm.

[0063] The Z height h11 of each support column 11 and the Z height h12 of each support column 12 may be equal to each other. Each support column 11 is arranged on the flat surface 13a1, and on the other hand, each support column 12 is arranged on the convex surface 13a2. Therefore, the bottom of the plurality of support columns 12 is raised higher than the bottom of the plurality of support columns 11. The top surfaces of the plurality of support columns 11 and their extended surfaces form the flat surface 10a1 in the region RG1, and the top surfaces of the plurality of support columns 12 and their extended surfaces form the convex surface 10a2 in the region RG2.

[0064] Correspondingly, the convex surface 10a2 and the flat surface 10a1 in the adsorption surface 10a may also extend along the convex surface 13a2 and the flat surface 13a1 in the main surface 13a, respectively. That is, the convex surface 10a2 may bulge from the flat surface 10a1 toward the +Z side in a curved shape, or may bulge from the flat surface 10a1 toward the +Z side in a cylindrical shape, or may bulge from the flat surface 10a1 toward the +Z side in a prism shape, or may bulge from the flat surface 10a1 toward the +Z side in a conical shape, or may bulge from the flat surface 10a1 toward the +Z side in a pyramidal shape. Figure 1 , Figure 2 In FIG. 1 , a configuration is illustrated in which the convex surface 10 a 2 rises from the flat surface 10 a 1 in a curved shape.

[0065] The Z height h10a2 of the convex surface 10a2 from the flat surface 10a1 may be, for example, 1 to 10 μm.

[0066] The convex surface 13a2 may be substantially circular in XY plan view. The maximum XY width (eg, diameter in XY plan view) L13a2 of the convex surface 13a2 may be 10 mm or less, and may be, for example, 5 to 10 mm.

[0067] The convex surface 10a2 may be substantially circular in an XY plan view. The maximum XY width (eg, diameter in an XY plan view) L10a2 of the convex surface 10a2 may be 10 mm or less, and may be, for example, 5 to 10 mm.

[0068] Here, if Figure 4 As shown, the convex surface 13a2 may also be raised from the flat surface 13a1 in a smooth curved surface when viewed in YZ section. Accordingly, the top surface of the support column 11 and its extended surface and the top surface of the support column 12 and its extended surface form a flat surface 10a1 and a convex surface 10a2 as surfaces that are smoothly continuous in the Z direction. That is, the convex surface 10a2 may also be formed as a surface that is smoothly continuous from the flat surface 10a1 and convex surface 10a2. Thus, the adsorption platform 10 can adsorb the bonded body CB while suppressing stress concentration by using the adsorption surface 10a including at least the flat surface 10a1 and the convex surface 10a2 that are smoothly continuous in the Z direction.

[0069] like Figure 5As shown, the convex surface 13a2 may also be substantially circular in the XY plan view. Accordingly, the support posts 11 and the support posts 12 may also be substantially arranged in the XY direction at a substantially constant X-direction pitch P. X , Y direction spacing P Y Arranged. Accordingly, the top surface of the support column 11 and its extended surface and the top surface of the support column 12 and its extended surface can also form a flat surface 10a1 and a convex surface 10a2 as surfaces that are smoothly continuous in the XY direction. That is, the convex surface 10a2 can also be formed as a surface that is smoothly continuous from the flat surface 10a1 and bulges. Thus, the adsorption platform 10 can adsorb the bonded body CB while suppressing stress concentration by using the adsorption surface 10a including at least the flat surface 10a1 and the convex surface 10a2 that are smoothly continuous in the XY direction.

[0070] The base 13 further has a vacuum hole 132 , a plurality of lifting post holes 134 , and a plurality of cylindrical portions 135 .

[0071] The vacuum hole 132 is arranged in the main body 131 in the region RG1. The vacuum hole 132 can be arranged in any position in the region RG1 that does not interfere with the lifting post hole 134 when viewed from the XY plane. The vacuum hole 132 can also extend from the main surface 13a of the base 13 to the bottom surface 13b in the region RG1. The vacuum hole 132 is connected to the vacuum pipe 53. The number of vacuum holes 132 arranged in the region RG1 is not limited to Figure 1 to Figure 3 The one shown as an example may be multiple.

[0072] The plurality of lifting post holes 134 are disposed in the region RG1. The lifting post holes 134 may extend from the main surface 13a of the base 13 to the bottom surface 13b in the region RG1.

[0073] The plurality of cylinders 135 are arranged at positions corresponding to the lifting post holes 134 in the region RG1, and surround the lifting post holes 134 in an annular shape from the outside in the XY direction. The Z height of the cylinder 135 may be equal to the Z height h11 of the support column 11.

[0074] The support member 14 is disposed on the -Z side of the base 13. The support member 14 rotatably supports the base 13 from the -Z side. The support member 14 is rotatable around the Z axis by the drive mechanism 30.

[0075] The plurality of lifting pins 15 correspond to the plurality of lifting pin holes 134. Each lifting pin 15 is inserted into the corresponding lifting pin hole 134. The lifting pin 15 can support the bonded body CB and can lift the bonded body CB in the Z direction relative to the suction surface 10a.

[0076] The plurality of frames 16 correspond to the plurality of lifting columns 15 . Each frame 16 connects the corresponding lifting column 15 to the support member 14 .

[0077] The drive mechanism 30 can drive the adsorption platform 10 and the bonding body CB to rise and fall in the Z direction, and can drive the adsorption platform 10 and the bonding body CB to rotate around the Z axis based on the control of the controller 60. The drive mechanism 30 has an actuator 31 and a shaft 32. The actuator 31 holds the shaft 32 in a manner that can drive the shaft 32. The shaft 32 has an axis along the Z direction and extends in the axial direction. Based on the control of the controller 60, the actuator 31 rotates the shaft 32 around the axis and causes the shaft 32 to rise in the Z direction.

[0078] The actuator 31 may also include a rotary motor and a linear motor, and the rotary motor is used to rotate the shaft 32 around the axis, and the linear motor is used to raise the shaft 32 in the Z direction. The actuator 31 may also include two rotary motors and a cam mechanism, and the first rotary motor is used to rotate the shaft 32 around the axis, and the rotary motion of the second rotary motor is converted into a translation motion by the cam mechanism, and the shaft 32 is raised in the Z direction using the translation motion.

[0079] The shaft 32 is disposed between the actuator 31 and the support member 14. One end of the shaft 32 is held by the actuator 31, and the other end is coupled to the support member 14. The rotational motion of the shaft 32 around the axis can be transmitted as the rotational motion of the support member 14, and the rotational motion of the support member 14 can be transmitted as the rotational motion of the adsorption stage 10 and the bonded body CB via the frame 16 and the lifting column 15.

[0080] The laser module 20 is separately arranged on the +Z side of the adsorption platform 10. The laser module 20 has a light source 21, an optical system 22 and a housing 23. The light source 21 and the optical system 22 are stored in the housing 23. The housing 23 has an opening on the -Z side. The light source 21 can generate laser light based on the control of the controller 60 and irradiate the bond CB through the optical system 22 and the opening of the housing 23. The optical system 22 can also be, for example, an electrochemical (galvano) optical system, which can fine-tune the XY irradiation position of the laser on the bond CB based on the control of the controller 60.

[0081] The driving mechanism 40 can move the adsorption table 10 in the XY direction based on the control of the controller 60. Thus, the driving mechanism 40 can move the laser module 20 relative to the adsorption table 10 in the XY direction. The driving mechanism 40 holds the base 13. The driving mechanism 40 can adjust the XY irradiation position of the laser to the bonded body CB by moving the base 13 in the XY direction based on the control of the controller 60.

[0082] The driving mechanism 40 is as follows Figure 3As shown by the two-dot dashed arrow in the figure, the XY irradiation position of the laser can also be gradually relatively moved from the XY position on the outer peripheral side of the adsorption surface 10a to the XY position on the central side. At this time, the laser can also be irradiated from the light source 21 to the bonded body CB through the optical system 22 at a predetermined period. Thus, the light source 21 can irradiate the laser toward the region RG1 and the region RG2 in sequence.

[0083] The exhaust device 50 can vacuum exhaust the space between the bonding body CB and the base 13, and form a reduced pressure atmosphere between the bonding body CB and the base 13. The exhaust device 50 has a vacuum pump 51, an exhaust pipe 52 and an exhaust pipe 53. The exhaust pipe 52 connects the vacuum pump 51 with the exhaust pipe 53. The exhaust pipe 52 can also pass through the supporting component 14. The exhaust pipe 53 connects the exhaust pipe 52 with the vacuum hole 132. The exhaust pipe 53 can also extend from the XY position near the center along the bottom surface 10b of the adsorption platform 10 to the XY position of the vacuum hole 132. Based on the control of the controller 60, the exhaust device 50 forms a reduced pressure atmosphere between the bonding body CB and the base 13, so that the adsorption platform 10 can vacuum adsorb the bonding body CB to the adsorption surface 10a.

[0084] For example, if the bonded body CB is carried to the +Z side of the adsorption platform 10 by a transport device (not shown) or the like and placed on the adsorption surface 10a, the controller 60 controls the vacuum device 50 to adsorb the bonded body CB to the adsorption surface 10a. At this time, the adsorption platform 10 adsorbs the bonded body CB to the adsorption surface 10a so that the convex surface 10a2 of the adsorption surface 10a rises from the flat surface 10a1 to the +Z side (see Figure 2 ). The controller 60 may also rotate the adsorption table 10 and the bonding body CB around the Z axis through the driving mechanism 30, while gradually moving the shell 23 relatively from the XY position on the outer peripheral side of the adsorption surface 10a to the XY position on the center side through the driving mechanism 40. The bonding body CB may also be irradiated with laser light at a prescribed period from the light source 21 through the optical system 22. If the shell 23 reaches the XY position corresponding to the region RG2 from the XY position corresponding to the region RG1, the controller 60 may also control the optical system 22 so that the XY irradiation position of the laser moves back and forth in the XY direction within the region RG2. Thus, the light source 21 can move the laser along a prescribed trajectory (refer to Fig.11 (a)~ Fig.11 (d)) passes through region RG1 and region RG2 in sequence and is irradiated periodically.

[0085] As described above, in the first embodiment, in the substrate peeling device 1, in the adsorption platform 10, the main surface 13a of the base 13 has a flat surface 13a1 in the region RG1, and has a convex surface 13a2 that rises from the flat surface 13a1 to the +Z side in the region RG2. A plurality of support pins 11 are arranged on the flat surface 13a1, and a plurality of support pins 12 are arranged on the convex surface 13a2. The Z height h11 of each support pin 11 and the Z height h12 of each support pin 12 are equal to each other. The top surfaces of the plurality of support pins 11 and their extended surfaces form a flat surface 10a1 in the region RG1, and the top surfaces of the plurality of support pins 12 and their extended surfaces form a convex surface 10a2 in the region RG2. Accordingly, in the adsorption platform 10, the adsorption surface 10a has a flat surface 10a1 in the region RG1, and has a convex surface 10a2 that rises from the flat surface 10a1 to the +Z side in the region RG2. Thus, when the bonded body CB is adsorbed, under the condition that the tensile stress from the bonded body CB toward the adsorption platform 10 acts on the adsorption surface 10a, the compressive stress from the adsorption platform 10 toward the bonded body CB can be selectively applied near the region RG2. As a result, in the adsorption platform 10, the adsorption force of the bonded body CB in the region RG2 can be made weaker than the adsorption force of the bonded body CB in the region RG1. Thus, when the laser is periodically irradiated along a predetermined trajectory through the regions RG1 and RG2 in sequence, and laser stripping is performed by the substrate stripping device 1, the stress between the substrates SB1 and SB2 during stripping in the region RG2 can be relaxed, scratches on the substrate SB can be suppressed, and one of the substrates SB1 and SB2 in the bonded body CB can be properly stripped from the other.

[0086] In addition, the substrate peeling device 1 can also be applied to Figure 6 to Figure 17 1 and 2 . A method for manufacturing a semiconductor device 300 is shown. Figure 6 This is a flowchart showing a method for manufacturing the semiconductor device 300 in a modification of the first embodiment. Figure 7 (a)~ Figure 7 (e), Figure 8 (a) Figure 8 (b) Fig. 9 (a)~ Fig. 9 (b) Fig.10 , Fig.12 (a)~ Fig.12 (c) Fig.13 (a)~ Fig.13 (c) Fig.16 (a)~ Fig.16 (e), Fig.17 It is a YZ cross-sectional view showing a method of manufacturing the semiconductor device 300 in the modification of the first embodiment. Fig.11 (a)~ Fig.11(d) is an XY plane view showing a method for manufacturing the semiconductor device 300 in a modification of the first embodiment. Fig.14 It is a YZ cross-sectional view showing relaxation of stress in a modification of the first embodiment. Fig.15 is an enlarged YZ cross-sectional view showing the relaxation of stress in a modified example of the first embodiment, which is equivalent to Fig.14 Part D is an enlarged YZ section.

[0087] In the method for manufacturing the semiconductor device 300, Figure 6 As shown, for example, the processing of the lower substrate (S1-S2) and the processing of the upper substrate (S3-S4) are performed in parallel. The lower substrate is the substrate that is arranged on the -Z side when joining the two substrates to be joined. The upper substrate is the substrate that is arranged on the +Z side when joining the two substrates to be joined.

[0088] In the preparation of the lower substrate (S1), as Figure 7 As shown in (a), a substrate (lower substrate) 2 is prepared. The substrate 2 may be formed of a material mainly composed of a semiconductor (eg, silicon) that does not substantially contain impurities.

[0089] In film formation (S2), as Figure 7 As shown in (b) of FIG. 2 , a predetermined device structure is formed on the main surface 2 a side (+Z side) of the substrate 2 .

[0090] For example, it is also possible to form Figure 8 The peripheral circuit structure PHC shown in (a) is shown in FIG. Impurities are introduced near the main surface 2a on the +Z side of the substrate 2 to form a semiconductor region SR. A conductive pattern GT is formed on the main surface 2a of the substrate 2. Thus, a plurality of transistors TR each including a semiconductor region SR and a conductive pattern GT are formed. The peripheral circuit structure PHC including the plurality of transistors TR functions as a peripheral circuit for the memory cell array structure MA described later.

[0091] After the predetermined device structure is formed, the film 3 is formed by a CVD method or the like. For example, the interlayer insulating film 40 can be formed of a material whose main component is an insulator, or can be formed of a material whose main component is a semiconductor oxide (such as silicon oxide). In addition, together with the deposition of the interlayer insulating film 40, a hole is processed in the interlayer insulating film 40, and a conductive material is embedded or a conductive pattern is formed, thereby forming a wiring structure WR electrically connected to the transistor TR. On the main surface 40a on the +Z side of the interlayer insulating film 40, an electrode PD1 electrically connected to the wiring structure WR is formed by electroplating or the like. Figure 7After (b), for simplicity, the film including the conductive pattern GT, the wiring structure WR, the electrode PD1, and the interlayer insulating film 40 is illustrated and described as the film 3. In addition, the interlayer insulating film 40 occupies most of the volume of the film 3, so it is equivalent to forming the film 3 with a material mainly composed of a semiconductor oxide (such as silicon oxide). In addition, Figure 8 The device structure shown in (a) is an example and is not particularly limited.

[0092] In the preparation of the upper substrate (S3), as Figure 7 As shown in (c), a substrate (upper substrate) 100 is prepared. The substrate 100 may be formed of a material mainly composed of a semiconductor (eg, silicon) that does not substantially contain impurities.

[0093] In the film formation (S4), as Figure 7 As shown in (d) of FIG. 1 , a film 4 is formed to cover the main surface 100 b of the substrate 100 by a CVD method or the like.

[0094] For example, it is also possible to form Figure 8 The film 4 including the memory cell array structure MAR shown in (b) is deposited. After depositing the insulating film 60 covering the main surface 100b of the substrate 100, a conductive film is deposited and the conductive film is patterned to form a conductive layer SL. The insulating film 60 can be formed of an insulator such as silicon oxide. The conductive layer SL can be formed of a semiconductor that is endowed with conductivity, such as polycrystalline silicon containing impurities. Thereafter, on the +Z side of the conductive layer SL, insulating layers and sacrificial layers (not shown) are alternately deposited multiple times to form a stacked body LM. The insulating layer can be formed of an insulator such as silicon oxide. The sacrificial layer can be formed of an insulator such as silicon nitride that can ensure an etching selectivity ratio between the insulating layer and the insulating layer. Each insulating layer and each sacrificial layer can be deposited with approximately the same film thickness.

[0095] A resist pattern with linear openings extending in the Y direction is formed on the -Z side of the stack. Using the resist pattern as a mask, anisotropic etching such as RIE (Reactive Ion Etching) is performed to form a groove that penetrates the stack LM in the YZ direction. Then, a splitting film (not shown) is embedded in the groove. The splitting film can be formed of a material with an insulator (such as silicon oxide) as a main component. The splitting film extends in the YZ direction on the -X side of the stack LM. The splitting film divides the stack LM from other stacks LM on the -X side. In each stack LM, the insulating layer and the sacrificial layer are alternately stacked multiple times. Each stack LM has a roughly rectangular shape with the Y direction as the length direction when viewed from above in XY.

[0096] A resist pattern is formed on the -Z side of each stacked body to open the position where the storage hole is to be formed. Using the resist pattern as a mask, anisotropic etching such as RIE is performed to form the storage hole that penetrates the stacked body LM and reaches the conductive layer SL.

[0097] A blocking insulating film, a charge storage film, and a tunnel insulating film are sequentially deposited on the side and bottom of the storage hole. The blocking insulating film can be formed of an insulating material such as silicon oxide. The bottom of the storage hole in the tunnel insulating film is selectively removed.

[0098] A semiconductor film is deposited on the side and bottom of the storage hole. The semiconductor film can be formed of a material with a semiconductor (e.g., polysilicon) as the main component. Then, a core component is embedded in the storage hole. The core component can be formed of an insulator such as silicon oxide. Thus, a plurality of columnar bodies PL are formed that penetrate the stack LM in the Z direction. The plurality of columnar bodies PL are formed to be arranged in the XY direction.

[0099] The sacrificial layer of the laminate LM is removed. A blocking insulating film is formed on the exposed surface of the void formed by the removal. The blocking insulating film can be formed of an insulating material such as aluminum oxide. In the void, a conductive layer WL is further embedded. The conductive layer WL can be formed of a material with a conductive material (such as a metal such as tungsten) as a main component. Thus, a laminate LM is formed in which the conductive layer WL and the insulating layer are alternately and repeatedly stacked. A memory cell is formed at a position where the conductive layer WL intersects with the semiconductor film of the columnar body PL. That is, a memory cell array structure MAR is formed in which a plurality of memory cells are arranged in three dimensions.

[0100] In addition, an interlayer insulating film 50 is further formed to cover the stacked body LM. By repeatedly forming a resist pattern and performing slimming and etching processes, a step structure is formed in which the conductive layer WL is led out in a step-like manner on both sides of the stacked body LM in the Y direction. A conductive plug CC electrically connected to each conductive layer WL is formed by forming a hole in the interlayer insulating film 50 and embedding a conductive material. In addition, holes are processed in the interlayer insulating film 50 together with the deposition of the interlayer insulating film 50, and a conductive material is embedded or a conductive pattern is formed, thereby forming a wiring structure WR2 electrically connected to the conductive plug CC. On the main surface 50a on the -Z side of the interlayer insulating film 50, an electrode PD2 electrically connected to the wiring structure WR2 is formed by electroplating or the like. Figure 7 After (d), for simplicity, the film including the memory cell array structure MAR, the conductive plug CC, the wiring structure WR2, the electrode PD2, and the interlayer insulating films 50 and 60 is illustrated and described as the film 4. In addition, the material of the film 4 is mainly treated as the material of the interlayer insulating film 60. In addition, Figure 8 The device structure shown in (b) is an example and is not particularly limited. Figure 8(b) shows one memory cell array structure MAR, but it can also be multiple.

[0101] The film 4 may be formed of any material having a higher infrared light absorption rate than the substrate 100. The film 4 may also be formed of any material having a higher absorption rate at a laser wavelength (e.g., 9200 nm or more and 10800 nm or less) suitable for the film 4 to function as a laser absorption layer than the substrate 100. The film 4 may be formed of a material mainly composed of an insulator or a material mainly composed of a semiconductor oxide (e.g., silicon oxide).

[0102] like Figure 6 As shown in FIG. 1 , if the processing of the lower substrate (S1 to S2) and the processing of the upper substrate (S3 to S4) are completed, the upper substrate and the lower substrate are bonded (S5). The main surface 3a of the +Z side of the film 3 (see FIG. 1 ) Figure 7 (b)) and the main surface 4b of the -Z side of the film 4 (refer to Figure 7 (d)) are activated by plasma irradiation, etc. Figure 7 As shown in (e), the substrate 2 and the substrate 100 are arranged opposite to each other in the Z direction so that the main surface 3a and the main surface 4b face each other. Figure 7 (e), Fig. 9 (a) and Fig.10 As shown, the XY position of the substrate 2 is aligned with the XY position of the substrate 100 in such a way that the XY position of the electrode PD1 in the main surface 3a corresponds to the XY position of the electrode PD2 in the main surface 4b. Fig. 9 (a) and Fig.10 As shown, the substrate 2 and the substrate 100 are brought close to each other in the Z direction, and the main surface 3a on the substrate 2 side and the main surface 4b on the substrate 100 side are bonded by direct bonding. At this time, the atoms of the main surface 3a and the atoms of the main surface 4b are bonded by hydrogen bonds or the like, and the substrate 2 and the substrate 100 are temporarily bonded.

[0103] Therefore, if Figure 6 As shown, heat treatment (annealing) is performed at a lower temperature (S6). In the heat treatment (annealing), as Fig. 9 As shown by the dotted arrows in (b), the substrate 2 and the substrate 100 are heated as a whole. In the heat treatment, for example, the substrate 2 and the substrate 100 are heated to a relatively low temperature (i.e., the allowable temperature of the device structure, such as about 200°C) for a specified time. At this time, due to the escape of water molecules from the interface, the atoms of the main surface 3a and the atoms of the main surface 4b are bonded by covalent bonds, etc., and the substrate 2 and the substrate 100 are in a formally bonded state. Thus, a joint body CB of the substrate 2 and the substrate 100 is formed. At this time, the electrode PD1 and the electrode PD2 are bonded by direct bonding, and the peripheral circuit structure PHC and the memory cell array structure MAR can be electrically connected.

[0104] if Figure 6 When S6 shown in FIG. 1 is completed, a transport device (not shown) or the like carries the bonded body CB to the substrate peeling device 1 (see FIG. 1 ). Figure 1 ) is moved into the +Z side of the adsorption table 10 and placed on the adsorption surface 10a. The substrate peeling device 1 controls the vacuum device 50 to adsorb the bonded body CB to the adsorption surface 10a. At this time, the adsorption table 10 adsorbs the bonded body CB to the adsorption surface 10a in such a manner that the adsorption surface 10a has a flat surface 10a1 in the region RG1 and a convex surface 10a2 in the region RG2 (see Figure 2 ). In this state, the substrate peeling apparatus 1 irradiates the bonded body CB with the laser beam 200 from the substrate 100 side so that the focal point is located near the film 4 (S7).

[0105] In the present embodiment, one irradiation with the laser light 200 includes irradiation with the laser light 200 from the first irradiation to the Nth irradiation with the laser light 200 onto the entire surface of the substrate. N is an arbitrary integer of 2 or more.

[0106] The substrate peeling device 1 uses a laser 200 in a wavelength band (preferably above 1117nm, more preferably around 9300nm or around 10600nm, etc.) in which the light absorption rate of the film 4 as the laser absorption layer is greater than that of the substrate 100 to irradiate the laser. The laser 200 can use a pulsed laser. The laser 200 can also use an infrared laser. The laser 200 can also use a carbon dioxide laser (CO2 laser). The absorption of the laser 200 occurs depending on the absorption coefficient and thickness of the substrate or the film. In this structure, the laser absorption occurs most in the film 4 as the laser absorption layer.

[0107] At this time, the substrate peeling device 1 is as follows Fig.11 As shown, the laser 200 is irradiated in a manner that the plurality of irradiation portions are distributed in two dimensions in the film 4. The substrate peeling apparatus 1 irradiates the laser 200 in a manner that the plurality of irradiation portions are separated from each other in the XY plane direction. The substrate peeling apparatus 1 irradiates the laser 200 by adjusting the irradiation interval suitable for peeling in consideration of the heat storage effect caused by local heating in the film 4.

[0108] The substrate peeling device 1 may also change the conditions in multiple stages and perform irradiation with the laser 200. Fig.11 As shown in (c), the region RG1 in the adsorption stage 10 is divided into an outer region RG11 and an inner region RG12. Fig.11 (a)~ Fig.11 (d) shows an example in which the substrate peeling apparatus 1 changes the conditions in three stages, namely, region RG11 →region RG12 →region RG2, and performs irradiation with the laser beam 200. Fig.11 (d) is to Fig.11 (c) is an XY enlarged plan view showing an enlarged view of the region RG2.

[0109] exist Fig.11 During the laser irradiation of the area RG11 shown in (a), the substrate peeling device 1 rotates the adsorption table 10 at a gradually increasing rotation speed while moving the laser module 20 relative to the adsorption table 10 from the outer periphery to the inner periphery. Thus, the substrate peeling device 1 moves the irradiation part of the laser 200 along a spiral trajectory from the outer periphery to the inner periphery in the area RG11. The pulse frequency of the laser can also be a fixed value of, for example, 10 to 100 kHz. The spacing PP1 of the irradiation part can also be 15 μm. The radius of the irradiation part can also be less than 12 mm. The rotation speed of the adsorption table 10 can also be adjusted to gradually increase within the range of 0.80 rpm to 47.8 rpm.

[0110] For example, Fig.12 As shown in (a), the substrate peeling device 1 determines the XY plane position of the laser 200-1 to be irradiated with the first irradiation, and adjusts it in such a way that the focus of the laser 200-1 is located inside the film 4. The XY plane position to be irradiated may also be a spiral trajectory (see Fig.11 The absorption rate of the laser 200-1 of the film 4 is greater than the absorption rate of the laser 200-1 of the substrate 100. Therefore, the laser 200-1 irradiated to the film 4 through the substrate 100 is effectively absorbed at the irradiation position in the film 4, causing the film 4 to locally heat (locally heat) at the XY plane position.

[0111] The local heating of the membrane 4 is as follows Fig.12 As shown in (b), the stress is transmitted to the interface between the film 4 and the substrate 100. The thermal expansion coefficient of the substrate 100 is larger than that of the film 4. Therefore, at this XY plane position, the substrate 100 expands toward the film 4 side, forming a convex portion 101 of the substrate 100 protruding toward the film 4 side, and its periphery becomes a concave portion 102. As a result, a compressive stress is generated at the interface between the front end of the convex portion 101 and the film 4, and a tensile stress is generated at the interface between the bottom surface of the concave portion 102 and the film 4, and the film 4 and the substrate 100 can be partially peeled off at the periphery of the XY plane position.

[0112] like Fig.12 As shown in (c), the substrate peeling device 1 determines the XY plane position of the laser 200-2 to be irradiated with the second irradiation from Fig.12 The XY plane position of (a) is shifted in the XY plane direction, and the focus of the laser 200-2 is adjusted so as to be located inside the film 4. Fig.12 The position of the XY plane position of (a) after being shifted in the XY plane direction may also be along a spiral trajectory (refer to Fig.11 (a)) is shifted from its starting position. The absorption rate of the laser 200-2 of the film 4 is greater than the absorption rate of the laser 200-2 of the substrate 100. Therefore, the laser 200-2 irradiated to the film 4 through the substrate 100 is effectively absorbed at the irradiation position in the film 4, causing the film 4 to locally heat (locally heat) at the XY plane position.

[0113] The local heating of the membrane 4 is as follows Fig.13 As shown in (a), the stress is transmitted to the interface between the film 4 and the substrate 100. The thermal expansion coefficient of the substrate 100 is larger than that of the film 4. Therefore, at the XY plane position, the substrate 100 expands toward the film 4 side, forming a convex portion 101 protruding from the substrate 100 toward the film 4 side, and its periphery becomes a concave portion 102. As a result, a compressive stress is generated at the interface between the front end of the convex portion 101 and the film 4, and a tensile stress is generated at the interface between the bottom surface of the concave portion 102 and the film 4, and the film 4 and the substrate 100 can be partially peeled off at the periphery of the XY plane position.

[0114] Although not shown in the figure, the substrate peeling device 1 determines the XY plane position of the laser 200-k to be irradiated with the kth irradiation just before reaching the region RG12 as a position offset in the XY plane direction from the XY plane position of the k-1th irradiation, and adjusts the focus of the laser 200-k so that it is located inside the film 4. k is an arbitrary integer greater than 2 and less than N. The position offset in the XY plane direction from the XY plane position of the k-1th irradiation may also be along a spiral trajectory (refer to Fig.11 (a)) is a position shifted from the position of the k-1 irradiation. The absorption rate of the laser 200-k of the film 4 is greater than the absorption rate of the laser 200-k of the substrate 100. Therefore, the laser 200-k irradiated to the film 4 through the substrate 100 is effectively absorbed at the irradiation position in the film 4, causing the film 4 to locally heat (locally heat) at the XY plane position.

[0115] The local heat generated by the film 4 is transferred to the interface between the film 4 and the substrate 100. The thermal expansion coefficient of the substrate 100 is larger than that of the film 4. Therefore, at the XY plane position, the substrate 100 expands toward the film 4 side, forming a convex portion 101 protruding from the substrate 100 toward the film 4 side, and its periphery becomes a concave portion 102. As a result, a compressive stress is generated at the interface between the front end of the convex portion 101 and the film 4, and a tensile stress is generated at the interface between the bottom surface of the concave portion 102 and the film 4, and the film 4 and the substrate 100 can be partially peeled off at the periphery of the XY plane position.

[0116] exist Fig.11During the laser irradiation of the area RG12 shown in (b), the substrate peeling device 1 rotates the adsorption table 10 at a fixed rotation speed while moving the laser module 20 relative to the adsorption table 10 from the outer periphery to the inner periphery. Thus, the substrate peeling device 1 moves the irradiation part of the laser 200 along a spiral trajectory from the outer periphery to the inner periphery in the area RG12. The pulse frequency of the laser may be gradually increased within a range of, for example, 10 to 100 kHz. The pitch PP2 of the irradiation part may be smaller than PP1. The radius of the irradiation part may be gradually reduced within a range of 12 mm to 2.5 mm. The rotation speed of the adsorption table 10 may also be fixed at 47.8 rpm.

[0117] Although not shown in the figure, the substrate peeling device 1 determines the XY plane position of the laser 200-(k+1) to be irradiated with the k+1th irradiation immediately after reaching the region RG12 as a position offset in the XY plane direction from the XY plane position of the kth irradiation, and adjusts the focus of the laser 200-(k+1) so that it is located inside the film 4. The position offset in the XY plane direction from the XY plane position of the kth irradiation may also be along a spiral trajectory (see Fig.11 (a)) is a position shifted from the k-th irradiation position. The absorption rate of the laser light 200-(k+1) by the film 4 is greater than the absorption rate of the laser light 200-(k+1) by the substrate 100. Therefore, the laser light 200-(k+1) irradiated to the film 4 through the substrate 100 is effectively absorbed at the irradiation position in the film 4, causing the film 4 to locally heat (locally heat) at the XY plane position.

[0118] The local heat generated by the film 4 is transferred to the interface between the film 4 and the substrate 100. The thermal expansion coefficient of the substrate 100 is larger than that of the film 4. Therefore, at the XY plane position, the substrate 100 expands toward the film 4 side, forming a convex portion 101 protruding from the substrate 100 toward the film 4 side, and its periphery becomes a concave portion 102. As a result, a compressive stress is generated at the interface between the front end of the convex portion 101 and the film 4, and a tensile stress is generated at the interface between the bottom surface of the concave portion 102 and the film 4, and the film 4 and the substrate 100 can be partially peeled off at the periphery of the XY plane position.

[0119] Although not shown in the figure, the substrate peeling device 1 determines the XY plane position of the laser 200-j to be irradiated with the j-th irradiation just before reaching the region RG2 as a position offset in the XY plane direction from the XY plane position of the j-1-th irradiation, and adjusts the focus of the laser 200-j so that it is located inside the film 4. j is an arbitrary integer greater than k and less than N. The position offset in the XY plane direction from the XY plane position of the j-1-th irradiation may also be along a spiral trajectory (refer to Fig.11(b)) is a position shifted from the position of the j-1 irradiation. The absorption rate of the laser 200-j of the film 4 is greater than the absorption rate of the laser 200-j of the substrate 100. Therefore, the laser 200-j irradiated to the film 4 through the substrate 100 is effectively absorbed at the irradiation position in the film 4, causing the film 4 to locally heat (locally heat) at the XY plane position.

[0120] The local heat generated by the film 4 is transferred to the interface between the film 4 and the substrate 100. The thermal expansion coefficient of the substrate 100 is larger than that of the film 4. Therefore, at the XY plane position, the substrate 100 expands toward the film 4 side, forming a convex portion 101 protruding from the substrate 100 toward the film 4 side, and its periphery becomes a concave portion 102. As a result, a compressive stress is generated at the interface between the front end of the convex portion 101 and the film 4, and a tensile stress is generated at the interface between the bottom surface of the concave portion 102 and the film 4, and the film 4 and the substrate 100 can be partially peeled off at the periphery of the XY plane position.

[0121] exist Fig.11 (c) and Fig.11 In the laser irradiation of the region RG2 shown in (d), the substrate peeling device 1 controls the optical system 22 in a manner that the XY irradiation position of the laser moves back and forth in the XY direction within the region RG2 while the rotation of the adsorption table 10 is stopped. Thus, the substrate peeling device 1 moves the irradiation portion of the laser 200 along a zigzag trajectory in the region RG2. Fig.11 In (d), an irradiation pattern is illustrated in which the XY irradiation position of the laser moves back and forth in the X direction while gradually shifting in the Y direction. The pulse frequency of the laser can also be fixed in the range of 10 to 100 kHz, for example. The pitch PP3 of the irradiation portion can also be smaller than PP2. The radius of the irradiation portion can also gradually decrease in the range of 2.5 mm to 0.1 mm.

[0122] In addition, Fig.11 In (d), the substrate peeling device 1 is illustrated as moving the irradiation portion of the laser 200 along a zigzag trajectory in the region RG2. However, the substrate peeling device 1 may also move the irradiation portion of the laser 200 along a spiral trajectory in the region RG2 (see Fig.25 ).

[0123] Although not shown in the figure, the substrate peeling device 1 determines the XY plane position of the laser 200-(j+1) to be irradiated with the j+1th irradiation immediately after reaching the region RG12 as a position offset in the XY plane direction from the XY plane position of the jth irradiation, and adjusts the focus of the laser 200-(j+1) so that it is located inside the film 4. The position offset in the XY plane direction from the XY plane position of the jth irradiation may also be along a spiral trajectory (see Fig.11(b)) is a position shifted from the j-th irradiation position. The absorption rate of the laser light 200-(j+1) by the film 4 is greater than the absorption rate of the laser light 200-(j+1) by the substrate 100. Thus, the laser light 200-(j+1) irradiated to the film 4 through the substrate 100 is effectively absorbed at the irradiation position in the film 4, causing local heat generation (local heating) of the film 4 at the XY plane position.

[0124] The local heat generated by the film 4 is transferred to the interface between the film 4 and the substrate 100. The thermal expansion coefficient of the substrate 100 is larger than that of the film 4. Therefore, at the XY plane position, the substrate 100 expands toward the film 4 side, forming a convex portion 101 protruding from the substrate 100 toward the film 4 side, and its periphery becomes a concave portion 102. As a result, a compressive stress is generated at the interface between the front end of the convex portion 101 and the film 4, and a tensile stress is generated at the interface between the bottom surface of the concave portion 102 and the film 4, and the film 4 and the substrate 100 can be partially peeled off at the periphery of the XY plane position.

[0125] like Fig.13 As shown in (b), the substrate peeling device 1 determines the final XY plane position of the laser 200-N to be irradiated for the Nth time, and adjusts it in such a way that the focus of the laser 200-N is located inside the film 4. The final XY plane position may also be along a zigzag trajectory (see Fig.11 The absorption rate of the laser 200-N of the film 4 may be greater than the absorption rate of the laser 200-N of the substrate 100. Thus, the laser 200-N irradiated to the film 4 through the substrate 100 is effectively absorbed at the irradiation position in the film 4, causing local heating (local heating) of the film 4 at the final XY plane position.

[0126] The local heating of the membrane 4 is as follows Fig.13 As shown in (c), the stress is transmitted to the interface between the film 4 and the substrate 100. The thermal expansion coefficient of the substrate 100 is larger than that of the film 4. Therefore, at the final XY plane position, the substrate 100 expands toward the film 4 side, forming a convex portion 101 protruding from the substrate 100 toward the film 4 side, and its periphery becomes a concave portion 102. As a result, a compressive stress is generated at the interface between the front end of the convex portion 101 and the film 4, and a tensile stress is generated at the interface between the bottom surface of the concave portion 102 and the film 4, and the film 4 and the substrate 100 can be partially peeled off at the periphery of the final XY plane position.

[0127] At this time, if Fig.14 and Fig.15 As shown, the convex surface 10a2 of the region RG2 in the adsorption stage 10 rises toward the +Z side from the flat surface 10a1 of the region RG1 (see Figure 2). Thus, in region RG2, stress in the direction opposite to the adsorption force can be selectively generated at the interface between the adsorption stage 10 and the bonded body CB, and the adsorption force can be relaxed. That is, the adsorption stage 10 can make the adsorption force of the bonded body CB in region RG2 weaker than the adsorption force of the bonded body CB in region RG1. Fig.14 and Fig.15 In FIG. 1 , the dotted arrows indicate stress in the region RG2 and the solid arrows indicate stress in the region RG1 . The dotted arrows indicate that the stress is smaller than that of the solid arrows.

[0128] For example, Fig.14 and Fig.15 As shown, in a state where the film 4 and the substrate 100 are partially connected at the portion corresponding to the region RG2, tensile stress in the -Z direction due to adsorption from the adsorption stage 10 and tensile stress in the +Z direction due to deformation of the substrate 100 may act on the connected portion. Among them, the tensile stress in the region RG2 in the adsorption surface 10a of the adsorption stage 10 is relaxed compared to the tensile stress in the region RG1, so the connected portion near the final XY plane position of the film 4 and the substrate 100 can be gradually peeled off. As a result, it is possible to suppress the occurrence of defects such as scratches in the final peeling portions corresponding to the region RG2 in each of the film 4 and the substrate 100.

[0129] By gradually performing local peeling, peeling is performed at the interface between the film 4 and the substrate 100 (S9). Fig.16 As shown in (a) , the substrate 100 is peeled off from the laminated body 6 in which the films 3 and 4 are laminated on the substrate 2 .

[0130] Considering the subsequent processing, etc., the laminate 6 is Figure 6 As shown, the peeling surface is processed (S9). In the laminate 6, as Fig.16 As shown in (b), a plurality of convex portions 4a2 are distributed in the XY direction on the main surface 4a at the +Z side of the film 4. The main surface 4a is polished and planarized by a CMP method or the like.

[0131] Therefore, if Fig.16 As shown in (c), a semiconductor device 300 is obtained in which the film 3 and the film 4 are stacked on the substrate 2 and the main surface 4a of the film 4 is planarized.

[0132] For example, Fig.17As shown, after planarization, a conductive plug PG electrically connected to the conductive layer SL is formed by forming a hole in the main surface 60a on the +Z side of the interlayer insulating film 60 and embedding a conductive material. An electrode pattern EL electrically connected to the conductive plug PG is formed on the main surface 60a of the interlayer insulating film 60 by electroplating. In addition, although not shown, an electrode pattern EL is also formed on the main surface 60a of the interlayer insulating film 60 to bypass the memory cell array structure MAR and connect to the peripheral circuit structure PHC. In this way, power, signals, etc. can be supplied to the memory cell array structure MAR and the peripheral circuit structure PHC from the outside.

[0133] In addition, the film 4 including the memory cell array structure MAR can be regarded as a chip area for the memory cell array, and the film 3 and the substrate 2 including the peripheral circuit structure PHC can be regarded as a chip area for the peripheral circuit. The semiconductor device 1 has a structure obtained by directly bonding the chip area for the memory cell array and the chip area for the peripheral circuit. This structure is also called CBA (CMOS directly Bonded to Array). In CBA, the number of chip areas for the memory cell array bonded to the +Z side of the chip area for the peripheral circuit is not limited to 1, and can also be 2 or more.

[0134] On the other hand, the peeled substrate 100 is as follows Figure 6 The substrate 100 may also be reused as shown in S10. Figure 6 As indicated by the solid arrow, the substrate is reused as the upper substrate 100 .

[0135] The substrate 100 just after peeling off is as follows Fig.16 As shown in (d), on the main surface 100b at the -Z side, a plurality of convex portions 101a are distributed in the XY direction. The main surface 100b is polished and flattened by a CMP method or the like. Fig.16 As shown in (e), a substrate 100 having a planarized main surface 100 b is obtained. Fig.16 Since the principal surface 100 b of the substrate 100 shown in (e) is flattened, it can be easily reused as the upper substrate 100 , for example.

[0136] In addition, the peeled substrate 100 may not be reused as the upper substrate 100, but may be reused as Figure 6 As shown by the dotted arrow, it is reused as the lower substrate 2.

[0137] As such, by applying the substrate peeling device 1 to Figure 6 to Figure 17 The method for manufacturing the semiconductor device 300 shown can appropriately peel the substrate 100 in the bonded body CB from the stacked body 6 in which the films 3 and 4 are stacked on the substrate 2 .

[0138] (Second embodiment)

[0139] Next, a substrate peeling device according to a second embodiment will be described. Hereinafter, the description will be mainly focused on the parts different from the first embodiment.

[0140] In the first embodiment, the convex surface 10a2 of the region RG2 in the adsorption stage 10 is exemplified as protruding toward the +Z side from the flat surface 10a1 of the region RG1, but in the second embodiment, a structure capable of selectively decompressing the concave space SP11 of the region RG1 in the adsorption stage 410 is exemplified.

[0141] The substrate peeling device 401 is as follows Fig.18 As shown, there is an adsorption platform 410 to replace the adsorption platform 10 (refer to Figure 1 ). Fig.18 It is a diagram showing a schematic configuration of the substrate peeling device 401 .

[0142] Adsorption station 410 Figure 19 to Figure 22 As shown, a base 413 is provided to replace the base 13 (see Figure 2 to Figure 5 ) and also has a partition wall 417. Fig.19 It is a YZ cross-sectional view showing the structure of the adsorption stage 410 . Fig. 20 It is an XY plane view showing the structure of the adsorption stage 410. Fig.19 The YZ section view corresponds to Fig. 20 YZ section cut along line FF. Fig.21 is a YZ enlarged cross-sectional view showing the structure near the center of the adsorption platform 410, corresponding to Fig.19 Enlarged YZ section view of part E.

[0143] Fig. 22 is an XY enlarged plan view showing the structure near the center of the adsorption platform 410, corresponding to Fig. 20 Enlarged XY plane view of section G.

[0144] The adsorption stage 410 can selectively decompress the concave space SP11 of the region RG1, and can make the pressure of the concave space SP12 of the region RG2 higher than the pressure of the concave space SP11 of the region RG1. Thus, when adsorbing the bonded body CB, the tensile stress from the bonded body CB toward the adsorption stage 10 in the region RG2 can be made smaller than the tensile stress from the bonded body CB toward the adsorption stage 10 in the region RG1. As a result, in the adsorption stage 10, the adsorption force of the bonded body CB in the region RG2 can be made weaker than the adsorption force of the bonded body CB in the region RG1.

[0145] The base 413 is relative to the base 13 (refer to Figure 2 to Figure 5) further includes a pressure adjustment hole 436. The pressure adjustment hole 436 is arranged in the main body portion 4131 in the region RG2. The pressure adjustment hole 436 can be arranged at any position in the region RG2 that does not interfere with the partition wall 417 in an XY plan view.

[0146] The pressure adjustment hole 436 may also extend from the concave space SP11 through the bottom surface 10b. In the support member 14, a hole 142 and a hole 143 corresponding to the pressure adjustment hole 436 are formed. The hole 142 extends from the surface on the +Z side to near the center in the -Z direction in the support member 14. The hole 143 extends from the -Z side end of the hole 142 to the outer side surface of the support member 14 in the XY direction. The pressure adjustment hole 436 is connected to the space (atmospheric pressure space) outside the support member 14 via the hole 142 and the hole 143. Thus, when the bonded body CB is adsorbed, the pressure of the concave space SP12 of the region RG2 can be made to be about atmospheric pressure (for example, 10Pa), and the pressure of the concave space SP12 of the region RG2 can be made higher than the pressure of the space SP11 corresponding to the region RG1.

[0147] The number of the pressure adjustment holes 436 arranged in the main body 4131 in the region RG2 is not limited to Figure 18 to Figure 22 The one shown as an example may be multiple.

[0148] The partition wall 417 is disposed between the concave space SP11 of the region RG1 and the concave space SP12 of the region RG2 in the adsorption platform 10. The partition wall 417 is disposed between the plurality of support pillars 11 and the plurality of support pillars 12. The Z height of the partition wall 417 may be equal to the Z height h11 of the support pillar 11, the Z height h12 of the support pillar 12, or the Z height of the partition wall 18. Thus, when the bonded body CB is adsorbed, the concave space SP11 of the region RG1 and the concave space SP12 of the region RG2 can be spatially separated.

[0149] The partition wall 417 extends in a ring shape along the boundary between the region RG1 and the region RG2 in an XY top view. The partition wall 417 surrounds a plurality of support posts 12 in an XY top view. The partition wall 417 may also be in a substantially circular ring shape in an XY top view. The maximum XY width (e.g., diameter in an XY top view) L417 of the partition wall 417 may also be less than 50 mm, or may be, for example, 5 to 50 mm. The XY thickness W417 of the partition wall 417 may also be approximately 1 mm. Thus, when the bonded body CB is adsorbed, the concave space SP11 of the region RG1 can be spatially separated from the concave space SP12 of the region RG2.

[0150] For example, if the bonded body CB is carried to the +Z side of the adsorption platform 410 by a transport device (not shown) and placed on the adsorption surface 10a, the controller 60 controls the vacuum device 50 to adsorb the bonded body CB to the adsorption surface 10a. At this time, the adsorption platform 410 adsorbs the bonded body CB to the adsorption surface 10a in a manner that can selectively decompress the concave space SP11 of the region RG1 (see Fig.19 ). The controller 60 can also rotate the adsorption table 10 and the bonding body CB around the Z axis through the driving mechanism 30, and gradually move the shell 23 relatively from the XY position on the outer peripheral side of the adsorption surface 10a to the XY position on the center side through the driving mechanism 40. At this time, the laser can also be irradiated from the light source 21 to the bonding body CB through the optical system 22 at a prescribed period. If the shell 23 reaches the XY position corresponding to the area RG2, the controller 60 can also control the optical system 22 to move the XY irradiation position of the laser back and forth in the XY direction within the area RG2. In this way, the light source 21 can move the laser along a prescribed trajectory (refer to Fig.11 (a)~ Fig.11 (d)) passes through region RG1 and region RG2 in sequence and is irradiated periodically.

[0151] As described above, in the second embodiment, in the substrate peeling device 401, the adsorption stage 410 can selectively decompress the concave space SP11 of the region RG1, and can make the pressure of the concave space SP12 of the region RG2 higher than the pressure of the concave space SP11 of the region RG1. Thus, when adsorbing the bonded body CB, the tensile stress from the bonded body CB toward the adsorption stage 10 in the region RG2 can be made smaller than the tensile stress from the bonded body CB toward the adsorption stage 10 in the region RG1. As a result, the adsorption stage 410 can make the adsorption force of the bonded body CB in the region RG2 weaker than the adsorption force of the bonded body CB in the region RG1. Thus, when the laser passes through the region RG1 and the region RG2 in sequence along a prescribed trajectory and irradiates periodically, and laser peeling is performed by the substrate peeling device 401, the stress between the substrates SB1 and SB2 during peeling in the region RG2 can be relaxed, scratches on the substrate SB can be suppressed, and one of the substrates SB1 and SB2 in the bonded body CB can be properly peeled from the other.

[0152] In addition, the substrate peeling device 1 can also be applied to Figure 6 to Figure 13 , Fig.23 , Fig.24 , Figure 16-17 1 and 2 , a method for manufacturing the semiconductor device 300 is shown. Fig.23 It is a YZ cross-sectional view showing relaxation of stress in a modification of the second embodiment. Fig.24 is an enlarged YZ cross-sectional view showing the relaxation of stress in a modified example of the second embodiment, which is equivalent to Fig.23 The YZ cross section after the H section is enlarged.

[0153] The same process as in the first embodiment is performed until Figure 6 The process of S6 shown in the figure is continued. Figure 6 When S6 shown in FIG. 1 is completed, a transport device (not shown) or the like carries the bonded body CB to the substrate peeling device 401 (see FIG. 10 ). Fig.18 ) is moved into the +Z side of the adsorption table 410 and placed on the adsorption surface 10a. The substrate peeling device 401 controls the vacuum device 50 to adsorb the bonded body CB to the adsorption surface 10a. At this time, the adsorption table 10 adsorbs the bonded body CB to the adsorption surface 10a in such a way that the pressure of the space SP12 corresponding to the region RG2 in the adsorption surface 10a is higher than the pressure of the space SP11 corresponding to the region RG1 (see Fig.19 ). In this state, the substrate peeling device 401 irradiates the bonded body CB with the laser beam 200 from the substrate 100 side so that the focal point is located near the film 4 (S7).

[0154] In S7 , similarly to the modification of the first embodiment, irradiation with the laser beam 200 is performed from the first irradiation to the (N-1)th irradiation.

[0155] Afterwards, if Fig.13 As shown in (b), the substrate peeling device 401 determines the final XY plane position of the laser 200-N to be irradiated for the Nth time, and adjusts it in such a way that the focus of the laser 200-N is located inside the film 4. The final XY plane position may also be along a zigzag trajectory (see Fig.11 The absorption rate of the laser 200-N of the film 4 may be greater than the absorption rate of the laser 200-N of the substrate 100. Thus, the laser 200-N irradiated to the film 4 through the substrate 100 is effectively absorbed at the irradiation position in the film 4, causing local heating (local heating) of the film 4 at the final XY plane position.

[0156] The local heating of the membrane 4 is as follows Fig.13 As shown in (c), the stress is transmitted to the interface between the film 4 and the substrate 100. The thermal expansion coefficient of the substrate 100 is larger than that of the film 4. Therefore, at the final XY plane position, the substrate 100 expands toward the film 4 side, forming a convex portion 101 protruding from the substrate 100 toward the film 4 side, and its periphery becomes a concave portion 102. As a result, a compressive stress is generated at the interface between the front end of the convex portion 101 and the film 4, and a tensile stress is generated at the interface between the bottom surface of the concave portion 102 and the film 4, and the film 4 and the substrate 100 can be partially peeled off at the periphery of the final XY plane position.

[0157] At this time, if Fig.23 and Fig.24As shown, the concave space SP12 of the region RG2 in the adsorption stage 10 is connected to the atmospheric pressure space via the pressure adjustment hole 436, and the concave space SP11 of the region RG1 is evacuated via the vacuum hole 132 (see Fig.18 That is, the adsorption stage 410 adsorbs the bonded body CB onto the adsorption surface 10a (see Fig.19 ). Thus, the adsorption stage 410 can make the adsorption force of the bonded body CB in the region RG2 weaker than the adsorption force of the bonded body CB in the region RG1. Fig.23 and Fig.24 In FIG. 1 , the dotted arrows indicate stress in the region RG2 and the solid arrows indicate stress in the region RG1 . The dotted arrows indicate that the stress is smaller than that of the solid arrows.

[0158] For example, Fig.23 and Fig.24 As shown, in a state where the film 4 and the substrate 100 are partially connected at the portion corresponding to the region RG2, tensile stress in the -Z direction due to adsorption from the adsorption stage 10 and tensile stress in the +Z direction due to deformation of the substrate 100 may act on the connected portion. Among them, the tensile stress in the region RG2 in the adsorption surface 10a of the adsorption stage 10 is smaller than the tensile stress in the region RG1, so the connected portion near the final XY plane position of the film 4 and the substrate 100 can be gradually peeled off. As a result, it is possible to suppress the occurrence of defects such as scratches in the final peeling portions corresponding to the region RG2 in each of the film 4 and the substrate 100.

[0159] By gradually performing local peeling, peeling is performed at the interface between the film 4 and the substrate 100 (S9). Fig.16 As shown in (a) , the substrate 100 is peeled off from the laminated body 6 in which the films 3 and 4 are laminated on the substrate 2 .

[0160] Thereafter, the same processing as that of the modified example of the first embodiment is performed.

[0161] As such, by applying the substrate peeling device 401 to Figure 6 to Figure 13 , Fig.23 , Fig.24 , Figure 16-17 The method for manufacturing the semiconductor device 300 shown can appropriately peel the substrate 100 in the bonded body CB from the stacked body 6 in which the films 3 and 4 are stacked on the substrate 2 .

[0162] (Third embodiment)

[0163] Next, a method for manufacturing the semiconductor device 300 in the third embodiment will be described. Hereinafter, the description will be mainly focused on the differences from the modification of the first embodiment and the modification of the second embodiment.

[0164] In the modified examples of the first embodiment and the second embodiment, the method of manufacturing the semiconductor device 300 using the adsorption stage with improved structure is exemplified, but in the third embodiment, the method of manufacturing the semiconductor device 300 with improved laser irradiation conditions is exemplified.

[0165] When the substrate is laser-peeled from the bonded body CB, the energy of the laser irradiation in the region RG2 is lower than that in the region RG1. At this time, the interval of the laser irradiation in the region RG2 may be narrower than that in the region RG1. Thus, the processing capacity of the region RG2 can be suppressed from being reduced compared to that of the region RG1, and the connection portion near the final XY plane position at the peeling interface can be gradually peeled off, and defects such as scratches can be suppressed from occurring at the peeling interface.

[0166] A substrate peeling device 501 not shown in the figure may also be used. Figure 6 to Figure 10 , Fig.25 , Figure 12-13 (a) Fig.26 , Figure 16-17 As shown, a method for manufacturing the semiconductor device 300 is performed. Fig.25 (a)~ Fig.25 (d) is an XY plane view showing the method for manufacturing the semiconductor device 300 in the third embodiment. Fig.26 (a)~ Fig.26 (b) is a YZ cross-sectional view showing the method for manufacturing the semiconductor device 300 in the third embodiment.

[0167] The substrate peeling device 501 is different from the substrate peeling device 1 (see Figure 1 ), or the entire main surface 13a on the +Z side of the base 513 is changed to be flat, and the support pins 11 are arranged in the area 13a2 instead of the support pins 12. In the substrate peeling device 501, the adsorption surface 10a is flat in both the area RG1 and the area RG2 of the adsorption table 510.

[0168] The same process as in the first embodiment is performed until Figure 6 The process of S6 shown in FIG. Figure 6 When S6 shown is completed, the substrate peeling device 501 irradiates the bonded body CB with the laser beam 200 from the substrate 100 side so that the focal point is located near the film 4 ( S7 ).

[0169] The substrate peeling device 501 is as follows Fig.25As shown, the laser 200 is irradiated in a two-dimensional distribution manner at a plurality of irradiation portions in the film 4. The substrate peeling device 501 may also irradiate the laser 200 by changing the conditions in a plurality of stages. Fig.25 As shown in (c), the region RG1 in the adsorption platform 510 is divided into an outer region RG11 and an inner region RG12. Fig.25 (a)~ Fig.25 (d) shows an example in which the substrate peeling apparatus 501 performs irradiation with the laser beam 200 by changing the conditions in three stages: region RG11 →region RG12 →region RG2. Fig.25 (d) is to Fig.25 (c) is an XY enlarged plan view showing the area RG12 and the area RG2 enlarged. Fig.25 In (d), the size of the dot represents the magnitude of the laser pulse energy.

[0170] exist Fig.25 During the laser irradiation of the area RG11 shown in (a), the substrate peeling device 501 rotates the adsorption table 510 at a gradually increasing rotation speed while moving the laser module 20 relative to the adsorption table 510 from the outer periphery to the inner periphery. Thus, the substrate peeling device 501 moves the irradiation part of the laser 200 along a spiral trajectory from the outer periphery to the inner periphery in the area RG11. The pulse frequency of the laser can also be a fixed value of, for example, 10 to 100 kHz. The pulse energy PE1 of the laser can also be 100 mj. The spacing PP1 of the irradiation part can also be 15 μm. The radius of the irradiation part can also be less than 12 mm. The rotation speed of the adsorption table 510 can also be adjusted to gradually increase in the range of 0.80 rpm to 47.8 rpm.

[0171] For example, the irradiation of the laser beam from the first irradiation to the k-th irradiation is performed in the same manner as in the modification of the first embodiment.

[0172] exist Fig.25 (b) and Fig.25 During the laser irradiation of the area RG12 shown in (d), the substrate peeling device 501 rotates the adsorption table 510 at a fixed rotation speed while moving the laser module 20 relative to the adsorption table 510 from the outer periphery to the inner periphery. Thus, the substrate peeling device 501 moves the irradiation part of the laser 200 along a spiral trajectory from the outer periphery to the inner periphery in the area RG12. The pulse frequency of the laser can also be gradually increased within a range of, for example, 10 to 100 kHz. The pulse energy PE1 of the laser can also be 100 mj. The spacing PP2 of the irradiation part can also be smaller than PP1. The radius of the irradiation part can also be gradually reduced within a range of 12 mm to 2.5 mm. The rotation speed of the adsorption table 10 can also be fixed at 47.8 rpm.

[0173] For example, similarly to the modification of the first embodiment, irradiation with laser light from the (k+1)th irradiation to the jth irradiation is performed.

[0174] exist Fig.25 (c) and Fig.25 During the laser irradiation of the region RG2 shown in (d), the substrate peeling device 501 rotates the adsorption table 510 at a fixed rotation speed while gradually moving the laser module 20 relative to the adsorption table 510 from the outer periphery to the inner periphery. Thus, the substrate peeling device 501 moves the irradiation portion of the laser 200 along a spiral trajectory in the region RG2. The pulse frequency of the laser may also be fixed within a range of, for example, 10 to 100 kHz. The pulse energy PE2 of the laser may also be smaller than PE1, and may be, for example, 50 mj. The spacing PP3 of the irradiation portion may also be smaller than PP2. The radius of the irradiation portion may also gradually decrease within a range of 2.5 mm to 0.1 mm.

[0175] Although not shown in the figure, the substrate peeling device 501 determines the XY plane position of the laser 200-(j+1) to be irradiated with the j+1th irradiation just after reaching the region RG12 as a position shifted from the XY plane position of the jth irradiation in the XY plane direction, and adjusts the laser 200-(j+1) so that the focus is located inside the film 4. As a result, the laser 200-(j+1) irradiated to the film 4 through the substrate 100 is effectively absorbed at the irradiation position inside the film 4, causing the film 4 to be locally heated (locally heated) at the XY plane position.

[0176] The local heat generation of the film 4 is transferred to the interface between the film 4 and the substrate 100. The thermal expansion coefficient of the substrate 100 is larger than that of the film 4. Therefore, at the XY plane position, the substrate 100 expands toward the film 4 side, forming a convex portion 101a protruding from the substrate 100 toward the film 4 side, and its periphery becomes a concave portion 102a. The XY plane size of the convex portion 101a may be smaller than the XY plane size of the convex portion 101 in the regions RG11 and RG12. The Z height of the convex portion 101a may be lower than the Z height of the convex portion 101 in the regions RG11 and RG12. The XY plane size of the concave portion 102a may be smaller than the XY plane size of the concave portion 102 in the regions RG11 and RG12. The Z depth of the concave portion 102a may be shallower than the Z depth of the concave portion 102 in the regions RG11 and RG12.

[0177] As a result, compressive stress is generated at the interface between the front end of the convex portion 101a and the film 4, and tensile stress is generated at the interface between the bottom surface of the concave portion 102a and the film 4, and the film 4 and the substrate 100 can be partially peeled off at the vicinity of the XY plane position. At this time, compared with the peeling of the regions RG11 and RG12, the compressive stress at the interface between the front end of the convex portion 101a and the film 4 and the tensile stress at the interface between the bottom surface of the concave portion 102a and the film 4 are respectively smaller, so the film 4 and the substrate 100 can be peeled off more easily at the vicinity of the XY plane position.

[0178] like Fig.26 As shown in (a), the substrate peeling device 501 determines the final XY plane position of the laser 200-N to be irradiated for the Nth time, and adjusts it in such a way that the focus of the laser 200-N is located inside the film 4. As a result, the laser 200-N irradiated to the film 4 through the substrate 100 is effectively absorbed at the irradiation position inside the film 4, and the film 4 is locally heated (locally heated) at the final XY plane position.

[0179] The local heating of the membrane 4 is as follows Fig.26 As shown in (b), the thermal expansion coefficient of the substrate 100 is transferred to the interface between the film 4 and the substrate 100. The thermal expansion coefficient of the substrate 100 is larger than the thermal expansion coefficient of the film 4. Therefore, at the final XY plane position, the substrate 100 expands toward the film 4 side, forming a convex portion 101a of the substrate 100 protruding toward the film 4 side, and its surrounding becomes a concave portion 102a. The XY plane size of the convex portion 101a can also be smaller than the XY plane size of the convex portion 101 in the regions RG11 and RG12. The Z height of the convex portion 101a can also be lower than the Z height of the convex portion 101 in the regions RG11 and RG12. The XY plane size of the concave portion 102a can also be smaller than the XY plane size of the concave portion 102 in the regions RG11 and RG12. The Z depth of the concave portion 102a can also be shallower than the Z depth of the concave portion 102 in the regions RG11 and RG12.

[0180] As a result, compressive stress is generated at the interface between the front end of the convex portion 101a and the film 4, and tensile stress is generated at the interface between the bottom surface of the concave portion 102a and the film 4, and the film 4 and the substrate 100 can be partially peeled off at the periphery of the final XY plane position. At this time, compared with the peeling of the regions RG11 and RG12, the compressive stress at the interface between the front end of the convex portion 101a and the film 4 and the tensile stress at the interface between the bottom surface of the concave portion 102a and the film 4 are respectively smaller, so the film 4 and the substrate 100 can be peeled off more easily at the periphery of the XY plane position.

[0181] That is, the tensile stress in the region RG2 of the adsorption stage 510 is smaller than the tensile stress in the region RG1, so the connection portion near the final XY plane position of the film 4 and the substrate 100 can be gradually peeled off. As a result, it is possible to suppress the occurrence of defects such as scratches in the final peeling portion corresponding to the region RG2 in each of the film 4 and the substrate 100.

[0182] By gradually performing local peeling, peeling is performed at the interface between the film 4 and the substrate 100 (S9). Fig.16 As shown in (a) , the substrate 100 is peeled off from the laminated body 6 in which the films 3 and 4 are laminated on the substrate 2 .

[0183] Thereafter, the same processing as that of the modified example of the first embodiment is performed.

[0184] As described above, in the third embodiment, when the substrate is laser-peeled from the bonded body CB, the energy of the laser irradiation in the region RG2 is made lower than the energy of the laser irradiation in the region RG1. At this time, the interval of the laser irradiation in the region RG2 may also be narrower than the interval of the laser irradiation in the region RG1. Thus, it is possible to suppress the reduction of the processing capacity of the region RG2 compared to the region RG1, and to gradually peel off the connection portion near the final XY plane position at the peeling interface, and to suppress the occurrence of defects such as scratches at the peeling interface.

[0185] Several embodiments of the present invention are described above, but these embodiments are presented as examples and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and changes can be made without departing from the scope of the invention. These embodiments and their variations are included in the scope or spirit of the invention and are included in the invention described in the claims and their equivalents.

Claims

1. A substrate peeling device, wherein: have: An adsorption stage for adsorbing a bonded body of a plurality of substrates, comprising a first region and a second region located inside the first region; and A light source capable of irradiating the first area and the second area with laser light in sequence, In the adsorption platform, The adsorption force of the bonded body in the second region is weaker than the adsorption force of the bonded body in the first region.

2. The substrate peeling device according to claim 1, wherein: The adsorption stage includes a base having a main surface including a flat surface arranged in the first region and a convex surface arranged in the second region and raised from the flat surface.

3. The substrate peeling device according to claim 1, wherein: In the adsorption stage, the pressure of the space corresponding to the second region is higher than the pressure of the space corresponding to the first region.

4. The substrate peeling device according to claim 2, wherein: The base has a hole in the first region extending from the main surface to a bottom surface on the opposite side of the main surface.

5. The substrate peeling device according to claim 4, wherein: The adsorption platform has: A plurality of first pillars are arranged on the flat surface and each has a first height; A plurality of second pillars are arranged on the convex surface and have the first height respectively; as well as The partition wall is arranged on the outer peripheral side of the flat surface and has the first height.

6. The substrate peeling device according to claim 1, wherein: The adsorption platform has: A base including a main surface arranged in the first region and the second region, and a hole extending from the main surface to a bottom surface on the opposite side of the main surface in the first region; a plurality of first pillars, arranged on the main surface in the first region, each having a first height; a plurality of second pillars, arranged on the main surface in the second region, each having the first height; a first partition wall disposed on the main surface at the outer peripheral side of the first region and having the first height; as well as The second partition wall is disposed on the main surface at a boundary between the first region and the second region and has the first height.

7. The substrate peeling device according to claim 2, wherein: The maximum plane width of the second region is 10 mm or less.

8. The substrate peeling device according to claim 6, wherein: The maximum plane width of the second region is 50 mm or less.

9. A substrate peeling method, wherein: The steps include: preparing a first substrate; laminating a first film on the first substrate; laminating a second film on the second substrate; bonding a principal surface of the first film on the side opposite to the first substrate and a principal surface of the second film on the side opposite to the second substrate to form a bonded body; irradiating the bonded structure with laser light from the first substrate side while the bonded structure is adsorbed on the adsorption stage; and peeling the first substrate from the bonded body, The adsorption stage includes a first area and a second area located inside the first area, wherein the adsorption force of the bonded body in the second area is weaker than the adsorption force of the bonded body in the first area. The irradiation comprises the following steps: irradiating the laser light toward the first region; and After irradiating the first region, the laser beam is irradiated toward the second region.

10. A method for manufacturing a semiconductor device, wherein: The steps include: The first substrate is peeled off from the bonded body by the substrate peeling method according to claim 9, thereby obtaining a laminated body in which the second film and the first film are laminated on the second substrate; and The peeled surface of the stacked body is planarized to obtain a semiconductor device.

11. A substrate peeling method, wherein: The steps include: preparing a first substrate; laminating a first film on the first substrate; laminating a second film on a second substrate, and bonding a principal surface of the first film on the opposite side to the first substrate and a principal surface of the second film on the opposite side to the second substrate to form a bonded body; irradiating the bonded structure with laser light from the first substrate side while the bonded structure is adsorbed on the adsorption stage; and peeling the first substrate from the bonded body, The adsorption platform includes a first area and a second area located inside the first area. The irradiation comprises the following steps: irradiating the first region with the laser beam at a first energy; and After irradiating the first region, the laser beam is irradiated toward the second region at a second energy lower than the first energy.

12. A method for manufacturing a semiconductor device, wherein: The steps include: The first substrate is peeled off from the bonded body by the substrate peeling method according to claim 11, thereby obtaining a laminated body in which the second film and the first film are laminated on the second substrate; and The peeled surface of the stacked body is planarized to obtain a semiconductor device.

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