Gallium nitride-based semiconductor laser element

Abstract

The gallium nitride-based semiconductor laser element comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, and a current-induced spin polarization layer is arranged between the lower waveguide layer and the active layer. The lower waveguide layer, the active layer and the current-induced spin polarization layer all have the characteristic of the Philips ionization degree, and the Philips ionization degree of the current-induced spin polarization layer is larger than or equal to the Philips ionization degree of the lower waveguide layer and smaller than or equal to the Philips ionization degree of the active layer. The Philips ionization degree of the current-induced spin polarization layer has a function y1 = A + B * ex / x first quadrant curve shape distribution. Under the condition that the laser injects current, the spin polarization effect in the current path direction is generated under the action of an electric field, piezoelectric polarization and spontaneous polarization fields in the laser are neutralized, the quantum confinement effect is reduced, electron leakage and carrier delocalization are reduced, and peak gain and optical power are improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor optoelectronic devices, and in particular to a gallium nitride-based semiconductor laser element. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse, mainly including solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are big differences between lasers and nitride semiconductor light-emitting diodes:

[0004] 1) Laser is generated by stimulated radiation of carriers, the spectrum half-width is small, the brightness is very high, and the output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes are spontaneously radiated, and the output power of a single light-emitting diode is in the mW level;

[0005] 2) The current density of the laser reaches KA / cm2, which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect;

[0006] 3) The spontaneous transition radiation of the light-emitting diode is incoherent light that transitions from a high energy level to a low energy level without any external influence, while the laser is stimulated transition radiation, and the energy of the induced photon should be equal to the difference in the energy level of the electron transition, producing the same coherent light as the photon and the induced photon;

[0007] 4) Different principles: When an external voltage is applied to a light-emitting diode, electron holes jump to a quantum well or a pn junction to generate radiative recombination light, while a laser can only emit when the lasing conditions are met. The carrier distribution in the active region must be reversed, and the stimulated radiation light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, and the threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0008] Nitride semiconductor lasers have the following problems: the lattice mismatch and large strain of the active layer induce a strong piezoelectric polarization effect, resulting in a strong QCSE quantum confined Stark effect, an increase in the valence band step difference of the laser, more difficult hole transport in the quantum well, uneven carrier injection, and uneven gain, which limits the improvement of the laser's electro-lasing gain; the Mg acceptor activation energy of the p-type semiconductor is large, the ionization efficiency is low, the hole concentration is much lower than the electron concentration, the hole mobility is much lower than the electron mobility, and the quantum well polarization electric field increases the hole injection barrier, and the holes overflow the active layer. The uneven hole injection and low efficiency lead to serious asymmetric mismatch between electrons and holes in the quantum well, electron leakage and carrier delocalization, more difficult hole transport in the quantum well, uneven carrier injection, and uneven gain. At the same time, the laser gain spectrum becomes wider and the peak gain decreases, resulting in an increase in the laser threshold current and a decrease in slope efficiency. Summary of the invention

[0009] In order to solve one of the above technical problems, the present invention provides a gallium nitride-based semiconductor laser element.

[0010] An embodiment of the present invention provides a gallium nitride-based semiconductor laser element, comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper confinement layer arranged in sequence from bottom to top, wherein a current-induced spin polarization layer is arranged between the lower waveguide layer and the active layer, wherein the lower waveguide layer, the active layer and the current-induced spin polarization layer all have Philips ionization degree characteristics, wherein the Philips ionization degree of the current-induced spin polarization layer is ≤ the Philips ionization degree of the lower waveguide layer ≤ the Philips ionization degree of the active layer, and the Philips ionization degree of the current-induced spin polarization layer has a function y1=A+B*e x / xThe first quadrant curve shape distribution, x is the depth of the current-induced spin polarization layer toward the active layer.

[0011] Preferably, the lower waveguide layer, the active layer and the current-induced spin polarization layer all have breakdown field strength characteristics, the breakdown field strength of the current-induced spin polarization layer is ≤ the breakdown field strength of the lower waveguide layer ≤ the breakdown field strength of the active layer, and the breakdown field strength of the current-induced spin polarization layer has a function y2=C+D*e x +E*e -x Curved shape distribution.

[0012] Preferably, the lower waveguide layer, the active layer and the current induced spin polarization layer all have thermal conductivity characteristics, the thermal conductivity of the active layer is ≤ the thermal conductivity of the lower waveguide layer ≤ the thermal conductivity of the current induced spin polarization layer, and the thermal conductivity of the current induced spin polarization layer has a function y3=F+G*x 2 sinx first quadrant curve shape distribution.

[0013] Preferably, the lower waveguide layer, the active layer and the current induced spin polarization layer all have thermal expansion coefficient characteristics, the thermal expansion coefficient of the active layer is ≤ the thermal expansion coefficient of the lower waveguide layer ≤ the thermal expansion coefficient of the current induced spin polarization layer, and the thermal expansion coefficient of the current induced spin polarization layer has a function y4=H+I*lnx-J*e x Curved shape distribution.

[0014] Preferably, in the Philips ionization degree distribution function, the breakdown field strength distribution function, the thermal conductivity distribution function and the thermal expansion coefficient distribution function of the current induced spin polarization layer, H≤A≤F≤C.

[0015] Preferably, the lower waveguide layer, the active layer and the current induced spin polarization layer all have In element concentration characteristics, the In element concentration of the current induced spin polarization layer is ≤ the In element concentration of the lower waveguide layer ≤ the In element concentration of the active layer, and the In element of the current induced spin polarization layer has a function y5=K+L*e x +M*e -x Curved shape distribution.

[0016] Preferably, the lower waveguide layer, the active layer and the current induced spin polarization layer all have an In / C element ratio characteristic, the In / C element ratio of the current induced spin polarization layer is ≤ the In / C element ratio of the lower waveguide layer ≤ the In / C element ratio of the active layer, and the In / C element ratio of the current induced spin polarization layer has a function y6=N+O*e x / xFirst quadrant curve shape distribution.

[0017] Preferably, the lower waveguide layer, the active layer and the current induced spin polarization layer all have an In / H element ratio characteristic, the In / H element ratio of the current induced spin polarization layer is ≤ the In / H element ratio of the lower waveguide layer ≤ the In / H element ratio of the active layer, and the In / H element ratio of the current induced spin polarization layer has a function y7=P+Q*e x / xFirst quadrant curve shape distribution.

[0018] Preferably, the lower waveguide layer, the active layer and the current induced spin polarization layer all have an In / O element ratio characteristic, the In / O element ratio of the current induced spin polarization layer is ≤ the In / O element ratio of the lower waveguide layer ≤ the In / O element ratio of the active layer, and the In / O element ratio of the current induced spin polarization layer has a function y8=R+S*e x +T*e -x Curved shape distribution.

[0019] Preferably, the current induced spin polarization layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, ReS2, GeTe, Cu2Te, Ga2Te3, PbTe, and BaBiO3.

[0020] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one or any of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond combination, with a thickness of 10 angstroms to 120 angstroms; the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 angstroms to 200 angstroms.

[0021] Preferably, the lower limiting layer, the lower waveguide layer, the upper waveguide layer and the upper limiting layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0022] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0023] The beneficial effects of the present invention are as follows: the present invention sets a current-induced spin polarization layer between the lower waveguide layer and the active layer of the semiconductor laser element, and defines the relationship between the Phillips ionization degree among the lower waveguide layer, the active layer and the current-induced spin polarization layer, and further defines the specific distribution characteristics of the Phillips ionization degree in the current-induced spin polarization layer, so that when the laser is injected with current, the electric field will produce a spin polarization effect along the current path direction, neutralize the piezoelectric polarization and spontaneous polarization field inside the laser, reduce the quantum confinement Stark effect, reduce electron leakage and carrier delocalization, and improve the peak gain and optical power. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0025] Figure 1 A schematic diagram of the structure of a gallium nitride-based semiconductor laser element according to an embodiment of the present invention;

[0026] Figure 2 This is a SIMS secondary ion mass spectrum of the gallium nitride-based semiconductor laser element described in an embodiment of the present invention.

[0027] Reference numerals:

[0028] 100. substrate, 101. lower confinement layer, 102. lower waveguide layer, 103. active layer, 104. upper waveguide layer, 105. upper confinement layer, 106. current-induced spin polarization layer. DETAILED DESCRIPTION

[0029] In order to make the technical solutions and advantages in the embodiments of the present application more clearly understood, the exemplary embodiments of the present application are further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than an exhaustive list of all the embodiments. It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict.

[0030] like Figure 1 and Figure 2 As shown, this embodiment provides a gallium nitride-based semiconductor laser element, comprising a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104 and an upper confinement layer 105 arranged in sequence from bottom to top. A current-induced spin polarization layer 106 is also arranged in the gallium nitride-based semiconductor laser element.

[0031] Specifically, in this embodiment, the gallium nitride-based semiconductor laser element is provided with a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104 and an upper confinement layer 105 in order from bottom to top. The current-induced spin polarization layer 106 is provided between the lower waveguide layer 102 and the active layer 103. The lower waveguide layer 102, the active layer 103 and the current-induced spin polarization layer 106 all have Philips ionization characteristics, and also have a certain size relationship, specifically: the Philips ionization of the current-induced spin polarization layer 106 ≤ the Philips ionization of the lower waveguide layer 102 ≤ the Philips ionization of the active layer 103. Among them, the Philips ionization in the current-induced spin polarization layer 106 has the function y1=A+B*e x / x is the first quadrant curve shape distribution, A and B are both arbitrary values, and x is the depth of the current induced spin polarization layer 106 toward the active layer 103.

[0032] In this embodiment, a current-induced spin polarization layer 106 is arranged between the lower waveguide layer 102 and the active layer 103 of the semiconductor laser element, and the relationship between the Phillips ionization degree among the lower waveguide layer 102, the active layer 103 and the current-induced spin polarization layer 106 is defined, and the specific distribution characteristics of the Phillips ionization degree in the current-induced spin polarization layer 106 are further defined, so that when the laser is injected with current, the electric field will produce a spin polarization effect along the current path direction, neutralize the piezoelectric polarization and spontaneous polarization field inside the laser, reduce the quantum confinement Stark effect, reduce electron leakage and carrier delocalization, and improve the peak gain and optical power.

[0033] In some optional embodiments, the lower waveguide layer 102, the active layer 103 and the current induced spin polarization layer 106 all have breakdown field strength characteristics and have a certain magnitude relationship, specifically: the breakdown field strength of the current induced spin polarization layer 106 ≤ the breakdown field strength of the lower waveguide layer 102 ≤ the breakdown field strength of the active layer 103. The breakdown field strength of the current induced spin polarization layer 106 has a function y2=C+D*e x +E*e -x Curve shape distribution, C, D, E are all arbitrary values.

[0034] This embodiment further defines the specific distribution characteristics of the breakdown field strength in the current-induced spin polarization layer 106 by defining the relationship between the breakdown field strengths among the lower waveguide layer 102, the active layer 103, and the current-induced spin polarization layer 106. The current-induced internal electric field can regulate the spin wave resonance mode, so that the conduction band and the valence band are completely spin polarized, the carrier spin polarization and the spin carrier injection into the active layer 103 of the laser element are enhanced, the hole injection barrier and the valence band order are reduced, the hole injection efficiency into the active layer 103 is improved, the overlap probability of the electron-hole wave function in the laser active layer 103 is improved, the stimulated radiation of the laser element is enhanced, the excitation threshold of the laser element is reduced, the confinement factor is enhanced, and the lasing power and slope efficiency of the laser element are improved.

[0035] In some optional embodiments, the lower waveguide layer 102, the active layer 103 and the current induced spin polarization layer 106 all have thermal conductivity characteristics and have a certain magnitude relationship, specifically: the thermal conductivity of the active layer 103 ≤ the thermal conductivity of the lower waveguide layer 102 ≤ the thermal conductivity of the current induced spin polarization layer 106. The thermal conductivity of the current induced spin polarization layer 106 has the function y3=F+G*x 2 The sinx first quadrant curve shape distribution, F and G are arbitrary values.

[0036] The lower waveguide layer 102, the active layer 103 and the current induced spin polarization layer 106 all have thermal expansion coefficient characteristics and have a certain size relationship, specifically: the thermal expansion coefficient of the active layer 103 ≤ the thermal expansion coefficient of the lower waveguide layer 102 ≤ the thermal expansion coefficient of the current induced spin polarization layer 106. The thermal expansion coefficient of the current induced spin polarization layer 106 has a function y4=H+I*lnx-J*e x Curve shape distribution, H, I, and J are all arbitrary values.

[0037] Furthermore, in the Philips ionization degree distribution function, the breakdown field strength distribution function, the thermal conductivity distribution function and the thermal expansion coefficient distribution function of the current induced spin polarization layer 106 , H≤A≤F≤C.

[0038] This embodiment defines the relationship between the thermal conductivity and the thermal expansion coefficient among the lower waveguide layer 102, the active layer 103 and the current-induced spin polarization layer 106, further defines the specific distribution characteristics of the thermal conductivity and the thermal expansion coefficient in the current-induced spin polarization layer 106, controls the thermal effect and thermal strain of the current-induced spin polarization layer 106, and further regulates the spin polarization effect of the active layer 103, reduces the hot carrier leakage, enhances the injection uniformity and localization of electron holes, improves the concentration of carriers in the active layer 103, suppresses the broadening of the laser gain spectrum, improves the peak gain, and improves the confinement factor and slope efficiency.

[0039] In some optional embodiments, the lower waveguide layer 102, the active layer 103 and the current induced spin polarization layer 106 all have In element concentration characteristics and also have a certain size relationship, specifically: the In element concentration of the current induced spin polarization layer 106 ≤ the In element concentration of the lower waveguide layer 102 ≤ the In element concentration of the active layer 103. Among them, the In element of the current induced spin polarization layer 106 has a function y5=K+L*e x +M*e -x Curve shape distribution, K, L, M are all arbitrary values.

[0040] The lower waveguide layer 102, the active layer 103 and the current induced spin polarization layer 106 all have In / C element ratio characteristics, and also have a certain size relationship, specifically: the In / C element ratio of the current induced spin polarization layer 106 ≤ the In / C element ratio of the lower waveguide layer 102 ≤ the In / C element ratio of the active layer 103. Among them, the In / C element ratio of the current induced spin polarization layer 106 has a function y6=N+O*e x / xThe first quadrant curve shape distribution, N and O are both arbitrary values.

[0041] The lower waveguide layer 102, the active layer 103 and the current induced spin polarization layer 106 all have In / H element ratio characteristics, and also have a certain size relationship, specifically: the In / H element ratio of the current induced spin polarization layer 106 ≤ the In / H element ratio of the lower waveguide layer 102 ≤ the In / H element ratio of the active layer 103. Among them, the In / H element ratio of the current induced spin polarization layer 106 has a function y7=P+Q*e x / xThe first quadrant curve shape distribution, P and Q are both arbitrary values.

[0042] The lower waveguide layer 102, the active layer 103 and the current induced spin polarization layer 106 all have In / O element ratio characteristics, and also have a certain size relationship, specifically: the In / O element ratio of the current induced spin polarization layer 106 ≤ the In / O element ratio of the lower waveguide layer 102 ≤ the In / O element ratio of the active layer 103. Among them, the In / O element ratio of the current induced spin polarization layer 106 has a function y8=R+S*e x +T*e -x Curve shape distribution, R, S, T are all arbitrary values.

[0043] In this embodiment, by limiting the relationship between the In element concentration, In / C element ratio, In / H element ratio and In / O element ratio among the lower waveguide layer 102, the active layer 103 and the current-induced spin polarization layer 106, the specific distribution characteristics of the In element concentration, In / C element ratio, In / H element ratio and In / O element ratio in the current-induced spin polarization layer 106 are further limited, the polarization field of the spin polarization layer is regulated, the polarization field inside the laser is neutralized and suppressed, the conduction band and the valence band are completely spin polarized, the carrier spin polarization and the spin carrier injection into the active layer 103 of the laser element are enhanced, the carrier transport and recombination efficiency are improved, the gain of the laser is enhanced, the threshold current density is reduced and the optical power of the laser is improved.

[0044] In some optional embodiments, the current induced spin polarization layer 106 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, ReS2, GeTe, Cu2Te, Ga2Te3, PbTe, and BaBiO3.

[0045] In some optional embodiments, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, and the number of periods is 3≥m≥1.

[0046] Specifically, the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and has a thickness of 10 to 120 angstroms.

[0047] The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms.

[0048] In some optional embodiments, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0049] In some optional embodiments, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0050] The following table is a parameter comparison between a conventional semiconductor laser element and the gallium nitride-based semiconductor laser element proposed in this embodiment, including slope efficiency, threshold current density, optical power, and limiting factor to present the differences between the conventional semiconductor laser element and the gallium nitride-based semiconductor laser element proposed in this embodiment:

[0051]

[0052] It can be seen that the gallium nitride-based semiconductor laser element proposed in this embodiment improves the slope efficiency, optical power and limitation factor, reduces the threshold current density, and has obvious advantages over traditional semiconductor lasers.

[0053] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include these modifications and variations.

Claims

1. A gallium nitride-based semiconductor laser element, comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper confinement layer arranged in sequence from bottom to top, characterized in that: A current-induced spin polarization layer is arranged between the lower waveguide layer and the active layer. The lower waveguide layer, the active layer and the current-induced spin polarization layer all have Philips ionization characteristics. The Philips ionization of the current-induced spin polarization layer is ≤ the Philips ionization of the lower waveguide layer ≤ the Philips ionization of the active layer. The Philips ionization of the current-induced spin polarization layer has a function y1=A+B*e x / xThe first quadrant curve shape distribution, x is the depth of the current-induced spin polarization layer toward the active layer.

2. The gallium nitride-based semiconductor laser device according to claim 1, characterized in that: The lower waveguide layer, the active layer and the current induced spin polarization layer all have breakdown field strength characteristics, the breakdown field strength of the current induced spin polarization layer is ≤ the breakdown field strength of the lower waveguide layer ≤ the breakdown field strength of the active layer, and the breakdown field strength of the current induced spin polarization layer has a function y2=C+D*e x +E*e -x Curved shape distribution.

3. The gallium nitride-based semiconductor laser device according to claim 2, characterized in that: The lower waveguide layer, the active layer and the current induced spin polarization layer all have thermal conductivity characteristics, the thermal conductivity of the active layer is ≤ the thermal conductivity of the lower waveguide layer ≤ the thermal conductivity of the current induced spin polarization layer, and the thermal conductivity of the current induced spin polarization layer has the function y3=F+G*x 2 sinx first quadrant curve shape distribution.

4. The gallium nitride-based semiconductor laser device according to claim 3, characterized in that: The lower waveguide layer, the active layer and the current induced spin polarization layer all have thermal expansion coefficient characteristics, the thermal expansion coefficient of the active layer is ≤ the thermal expansion coefficient of the lower waveguide layer ≤ the thermal expansion coefficient of the current induced spin polarization layer, and the thermal expansion coefficient of the current induced spin polarization layer has a function y4=H+I*lnx-J*e x Curved shape distribution.

5. The gallium nitride-based semiconductor laser device according to claim 4, characterized in that: In the Philips ionization degree distribution function, the breakdown field strength distribution function, the thermal conductivity distribution function and the thermal expansion coefficient distribution function of the current induced spin polarization layer, H≤A≤F≤C.

6. The gallium nitride-based semiconductor laser device according to claim 1, wherein: The lower waveguide layer, the active layer and the current induced spin polarization layer all have In element concentration characteristics, the In element concentration of the current induced spin polarization layer is ≤ the In element concentration of the lower waveguide layer ≤ the In element concentration of the active layer, and the In element of the current induced spin polarization layer has a function y5=K+L*e x +M*e -x Curved shape distribution.

7. The gallium nitride-based semiconductor laser device according to claim 6, characterized in that: The lower waveguide layer, the active layer and the current induced spin polarization layer all have an In / C element ratio characteristic, the In / C element ratio of the current induced spin polarization layer is ≤ the In / C element ratio of the lower waveguide layer ≤ the In / C element ratio of the active layer, and the In / C element ratio of the current induced spin polarization layer has a function y6=N+O*e x / xFirst quadrant curve shape distribution.

8. The gallium nitride-based semiconductor laser device according to claim 7, characterized in that: The lower waveguide layer, the active layer and the current induced spin polarization layer all have an In / H element ratio characteristic, the In / H element ratio of the current induced spin polarization layer is ≤ the In / H element ratio of the lower waveguide layer ≤ the In / H element ratio of the active layer, and the In / H element ratio of the current induced spin polarization layer has a function y7=P+Q*e x / xFirst quadrant curve shape distribution.

9. The gallium nitride-based semiconductor laser device according to claim 8, characterized in that: The lower waveguide layer, the active layer and the current induced spin polarization layer all have an In / O element ratio characteristic, the In / O element ratio of the current induced spin polarization layer is ≤ the In / O element ratio of the lower waveguide layer ≤ the In / O element ratio of the active layer, and the In / O element ratio of the current induced spin polarization layer has a function y8=R+S*e x +T*e -x Curved shape distribution.

10. The gallium nitride based semiconductor laser device according to claim 1, wherein: The current induced spin polarization layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, ReS2, GeTe, Cu2Te, Ga2Te3, PbTe, and BaBiO3; The active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond , with a thickness of 10 angstroms to 120 angstroms; the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 angstroms to 200 angstroms; The lower confinement layer, the lower waveguide layer, the upper waveguide layer, and the upper confinement layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN; The substrate includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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