Display panel, repairing method thereof and electronic equipment

Abstract

The invention provides a display panel, a repairing method thereof and electronic equipment. The repairing method of the display panel comprises the steps that a thin film transistor and a laser transmitter are provided, the thin film transistor comprises a substrate, a first electrode layer arranged on one side of the substrate and an insulating layer covering the first electrode layer, and the insulating layer is provided with a through hole exposing the first electrode layer and a notch penetrating through the hole wall of the through hole; the laser from the laser emitter is emitted to the insulating layer in the gap so as to heat the insulating layer in the gap. And repairing gas is introduced to form a repairing layer for filling the gap. By controlling the laser, utilizing the local heating characteristic of the laser and cooperating with the repairing gas, local thin film deposition can be achieved, the notch formed by lateral etching can be repaired, the phenomenon of line breakage caused by poor coverage of an upper layer material is avoided, and therefore the yield of the thin film transistor is increased.

Description

Technical Field

[0001] The present application belongs to the technical field of display panels, and specifically relates to display panels and repair methods thereof, and electronic devices. Background Art

[0002] The etching process is carried out in the manufacturing process of the array substrate of the thin film transistor. The etching process refers to the selective exposure, development, and peeling of the thin film surface according to the mask pattern or design requirements to obtain the desired pattern. However, under cut phenomenon sometimes occurs in this process. Under cut means drilling, which refers to lateral etching under the photoresist mask. In this process, lateral etching will cause gaps in the lower layer, resulting in poor coverage of the upper material and broken wires, thereby affecting the working performance of the thin film transistor and causing the yield rate of the thin film transistor to decrease. Summary of the invention

[0003] In view of this, a first aspect of the present application provides a method for repairing a display panel, the method comprising:

[0004] A thin film transistor and a laser emitter are provided, wherein the thin film transistor comprises a substrate, a first electrode layer disposed on one side of the substrate, and an insulating layer covering the first electrode layer, wherein the insulating layer has a through hole exposing the first electrode layer and a notch penetrating a hole wall of the through hole;

[0005] Allowing the laser from the laser emitter to radiate the insulating layer in the notch to heat the insulating layer in the notch;

[0006] A repairing gas is introduced to form a repairing layer filling the gap.

[0007] The repair method provided in the first aspect of the present application can not only use the laser to locally heat the gap and induce a local temperature field by controlling the laser to shoot to the insulating layer in the gap, but also can provide a basis for film formation only at a specific preset position by controlling the laser to shoot only to a preset position. Then, a repair gas is introduced, and the repair gas dissociates under the action of a specific temperature and laser to form a film, forming a repair layer that fills the gap, achieving local thin film deposition, and thus repairing the gap formed by lateral etching.

[0008] Therefore, the present application controls the laser, utilizes the local heating characteristics of the laser, and cooperates with the repair gas to achieve local thin film deposition, repair the gaps formed by lateral etching, avoid the phenomenon of broken wires caused by poor coverage of the upper material, and thus improve the yield rate of thin film transistors.

[0009] The laser includes a plurality of sub-beams with different emission directions; and the step of irradiating the laser to the insulating layer in the gap includes:

[0010] Providing a beam expander and a focusing mirror disposed on one side of the laser emitter;

[0011] The beam expander receives and transmits a plurality of sub-beams from the laser emitter, and the beam expander is used to make the light emitting directions of the plurality of sub-beams the same;

[0012] The focusing mirror receives and transmits a plurality of sub-beams from the beam expander, and the focusing mirror is used to gather the plurality of sub-beams;

[0013] A plurality of sub-beams from the focusing mirror are made to project onto the insulating layer located in the gap.

[0014] Before the step of irradiating the laser onto the insulating layer in the gap, the method further comprises:

[0015] Provide scanning electron microscope equipment;

[0016] Scanning the notch using the scanning electron microscope device to obtain position information of the notch;

[0017] Provide optical three-dimensional analyzer;

[0018] The optical three-dimensional analyzer is used to scan the notch to obtain the morphological information of the notch.

[0019] Wherein, after the step of obtaining the morphological information of the notch, the method further includes:

[0020] Calculate and obtain repair information according to the morphology information, wherein the repair information includes at least one of the flow rate of the repair gas, the duration of the introduction of the repair gas, the power of the laser, and the emission duration of the laser;

[0021] and / or, forming at least one groove on the surface of the notch;

[0022] The step of forming the repair layer includes:

[0023] The repair layer also fills the groove.

[0024] Wherein, the step of irradiating the laser to the insulating layer located in the gap includes:

[0025] Provide a temperature detector;

[0026] Using the temperature detector to detect the temperature of the substrate;

[0027] The step of introducing the repair gas comprises:

[0028] Provide a flow detector;

[0029] The flow detector is used to detect the flow rate of the repair gas.

[0030] The step of forming the repair layer includes:

[0031] Microwave assist is available;

[0032] When the repair gas is introduced, the microwave assistant is used to generate microwave radiation to the gap.

[0033] Wherein, the step of providing the thin film transistor includes:

[0034] The thin film transistor further includes a second electrode layer to be repaired, the second electrode layer to be repaired is arranged on the wall of the through hole and electrically connected to the first electrode layer, and the notch is exposed from the second electrode layer to be repaired;

[0035] After the step of providing the thin film transistor, the method further comprises:

[0036] peeling off the second electrode layer to be repaired;

[0037] After the step of forming the repair layer, the method further comprises:

[0038] A second electrode layer is formed on the side of the insulating layer away from the first electrode layer, the second electrode layer also covers the through hole wall and the repair layer, and the second electrode layer is electrically connected to the first electrode layer.

[0039] A second aspect of the present application provides a display panel, the display panel comprising a thin film transistor, the thin film transistor being obtained by the display panel repair method provided by the first aspect of the present application;

[0040] The thin film transistor includes a substrate, a first electrode layer arranged on one side of the substrate, and an insulating layer covering the first electrode layer, wherein the insulating layer has a through hole exposing the first electrode layer and a gap penetrating the wall of the through hole; the thin film transistor also includes a repair layer, which fills the gap.

[0041] The display panel provided in the second aspect of the present application, by adopting the thin film transistor obtained by the repair method provided in the first aspect of the present application, can achieve local thin film deposition, repair the gap formed by lateral etching, avoid the phenomenon of broken wires caused by poor coverage of the upper material, thereby improving the yield rate of the thin film transistor.

[0042] Wherein, the surface of the notch is further provided with at least one groove, and the repair layer also fills the groove.

[0043] Wherein, the thin film transistor further includes a bonding portion, the bonding portion is arranged on the groove wall of the groove, and the bonding portion is used to bond and connect the repair layer and the insulating layer.

[0044] A third aspect of the present application provides an electronic device, which includes a housing and the display panel provided in the second aspect of the present application, wherein the display panel is mounted on the housing.

[0045] The electronic device provided in the third aspect of the present application, by adopting the display panel provided in the second aspect of the present application, can achieve local thin film deposition of the thin film transistor of the display panel using a repair method, repair the gap formed by lateral etching, avoid the phenomenon of broken wires caused by poor coverage of the upper material, thereby improving the yield rate of the thin film transistor. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] In order to more clearly illustrate the technical solutions in the implementation modes of the present application, the drawings required for use in the implementation modes of the present application will be described below.

[0047] Figure 1 A schematic diagram of a display panel repair method provided in one embodiment of the present application Figure 1 .

[0048] Figure 2 A schematic diagram of the structure of a thin film transistor provided in one embodiment of the present application Figure 1 .

[0049] Figure 3 A schematic diagram of the structure of a thin film transistor provided in one embodiment of the present application Figure 2 .

[0050] Figure 4 A schematic diagram of the structure of a thin film transistor provided in one embodiment of the present application Figure 3 .

[0051] Figure 5 A schematic diagram of a display panel repair method provided in one embodiment of the present application Figure 2 .

[0052] Figure 6 A schematic diagram of the structure of a laser emitter, a beam expander, and a focusing lens provided in one embodiment of the present application.

[0053] Figure 7 A schematic diagram of a display panel repair method provided in one embodiment of the present application Figure 3 .

[0054] Figure 8 A schematic diagram of a display panel repair method provided in one embodiment of the present application Figure 4 .

[0055] Fig. 9 A schematic diagram of a display panel repair method provided in one embodiment of the present application Figure 5 .

[0056] Fig.10 A schematic diagram of a display panel repair method provided in one embodiment of the present application Figure 6 .

[0057] Fig.11 A schematic diagram of a display panel repair method provided in one embodiment of the present application Figure 7 .

[0058] Fig.12 A schematic diagram of a display panel repair method provided in one embodiment of the present application Figure 8 .

[0059] Fig.13 A schematic diagram of a display panel repair method provided in one embodiment of the present application Figure 9 .

[0060] Fig.14 A schematic diagram of a display panel repair method provided in one embodiment of the present application Figure 10 .

[0061] Fig.15 A schematic diagram of a display panel repair method provided in one embodiment of the present application Figure 10 one.

[0062] Fig.16 A process schematic diagram of a display panel repair method provided in one embodiment of the present application.

[0063] Fig.17 A schematic diagram of the structure of a thin film transistor provided in one embodiment of the present application Figure 4 .

[0064] Fig.18 A schematic diagram of a display panel repair method provided in one embodiment of the present application Figure 10 two.

[0065] Fig.19 A schematic diagram of a partial structure of a thin film transistor provided in another embodiment of the present application.

[0066] Fig. 20 A schematic diagram of a partial structure of a thin film transistor provided in yet another embodiment of the present application.

[0067] Fig.21 A schematic diagram of the structure of an electronic device provided in one embodiment of the present application.

[0068] Explanation of the reference numerals: thin film transistor-1, substrate-11, first electrode layer-12, insulating layer-13, first sub-insulating layer-131, second sub-insulating layer-132, second electrode layer to be repaired-14a, second electrode layer-14b, through hole-15, first sub-through hole-151, second sub-through hole-152, notch-16, groove-161, bonding portion-162, gate electrode layer-171, common electrode layer-172, active layer-173, drain electrode layer-174, source electrode layer-175, pixel electrode layer-176, repair layer-18, laser emitter-21, beam expander-22, focusing lens-23, electronic device-3, housing-31, display panel 32. DETAILED DESCRIPTION

[0069] The following are preferred implementations of the present application. It should be noted that, for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present application, and these improvements and modifications are also considered to be within the scope of protection of the present application.

[0070] Unless otherwise specified or there is a contradiction, the terms and phrases used in this application have the following meanings:

[0071] In this application, "first", "second", etc. are used only for descriptive purposes and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features.

[0072] In this application, "one or several" refers to any one, any two or more of the listed items. Among them, "several" refers to any two or more of the listed items.

[0073] In the present application, it is necessary to understand that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0074] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be connected, detachably connected, or integrated. It can be mechanically connected or electrically connected. It can be directly connected or indirectly connected through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0075] Please refer to Figure 1-Figure 4 This embodiment provides a method for repairing a display panel, the method comprising:

[0076] S100, providing a thin film transistor 1 and a laser emitter 21, wherein the thin film transistor 1 includes a substrate 11, a first electrode layer 12 arranged on one side of the substrate 11, and an insulating layer 13 covering the first electrode layer 12, wherein the insulating layer 13 has a through hole 15 exposing the first electrode layer 12, and a notch 16 penetrating the wall of the through hole 15.

[0077] like Figure 2 As shown in FIG. 1 , the gap 16 is caused by lateral etching under the photoresist mask, i.e., the under cut phenomenon. Figure 3 As shown, if a thin film is formed directly on the insulating layer 13 , the thin film will be disconnected at the notch 16 , resulting in a broken line, which affects the working performance of the thin film transistor 1 .

[0078] The thin film transistor 1 includes a substrate 11, a gate electrode layer 171 disposed on one side of the substrate 11, a common electrode layer 172 disposed on one side of the substrate 11 and spaced apart from the gate electrode layer 171, a first sub-insulating layer 131 covering the gate electrode layer 171 and the common electrode layer 172, an active layer 173 disposed on the side of the first sub-insulating layer 131 away from the substrate 11, a drain electrode layer 174 disposed on the side of the first sub-insulating layer 131 away from the substrate 11, a source electrode layer 175 disposed on the side of the first sub-insulating layer 131 away from the substrate 11, a second sub-insulating layer 132 covering the active layer 173, the drain electrode layer 174 and the source electrode layer 175, and a pixel electrode layer 176 disposed on the side of the second sub-insulating layer 132 away from the substrate 11. The drain electrode layer 174 and the source electrode layer 175 are both electrically connected to the active layer 173.

[0079] The thin film transistor 1 has a first sub-through hole 151 penetrating the first sub-insulating layer 131 and the second sub-insulating layer 132 and exposing the common electrode layer 172. The pixel electrode layer 176 is also disposed on the hole wall of the first sub-through hole 151 and electrically connected to the common electrode layer 172.

[0080] The thin film transistor 1 further comprises a second sub-through hole 152 penetrating the second sub-insulating layer 132 and exposing the drain electrode layer 174 or the source electrode layer 175 . The pixel electrode layer 176 is also disposed on the hole wall of the second sub-through hole 152 and electrically connected to the drain electrode layer 174 or the source electrode layer 175 .

[0081] The insulating layer 13 includes a first sub-insulating layer 131 and a second sub-insulating layer 132. The through hole 15 includes a first sub-through hole 151 and a second sub-through hole 152. The under cut phenomenon, that is, the lateral etching phenomenon, may include the following three situations.

[0082] The first case: the first electrode layer 12 is the common electrode layer 172, the notch 16 is provided in the hole wall of the first sub-through hole 151, and the second electrode layer 14a to be repaired is the pixel electrode layer 176. In this case, the notch 16 penetrates the first sub-insulating layer 131 and / or the second sub-insulating layer 132.

[0083] like Figure 2 and Figure 3 As shown, the notch 16 is disposed on the hole wall of the first sub-through hole 151 and penetrates the second sub-insulating layer 132 .

[0084] Second situation: the first electrode layer 12 is the drain electrode layer 174 , the notch 16 is provided on the hole wall of the second sub-through hole 152 , and the second electrode layer 14 a to be repaired is the pixel electrode layer 176 . In this case, the notch 16 penetrates the second sub-insulating layer 132 .

[0085] The third case: the first electrode layer 12 is the source electrode layer 175 , the notch 16 is provided on the hole wall of the second sub-through hole 152 , and the second electrode layer 14 a to be repaired is the pixel electrode layer 176 . In this case, the notch 16 penetrates the second sub-insulating layer 132 .

[0086] The laser emitter 21 is used to emit laser. Optionally, the laser emitter 21 can be an infrared laser, such as Nd:YAG laser, CO2 laser, etc.

[0087] S200 , irradiating the laser from the laser emitter 21 to the insulating layer 13 in the notch 16 to heat the insulating layer 13 in the notch 16 .

[0088] S300, introducing a repair gas to form a repair layer 18 filling the gap 16. Figure 4 shown.

[0089] Repair gases include precursor gas and carrier gas. Precursor gas is used to generate target substances or gases involved in certain reactions. Carrier gas has a certain inertness to avoid chemical reactions with active gaseous molecules at high temperatures, thereby ensuring the accuracy of the test results.

[0090] Optionally, the precursor gas includes SiH4 gas and NH3 gas. The carrier gas may be an inert gas, such as Ar gas. Optionally, the repair layer 18 may be a SiNx film.

[0091] Optionally, in a vacuum environment, laser light from the laser emitter 21 is emitted to the insulating layer 13 in the gap 16 , and a repair gas is introduced to form a repair layer 18 filling the gap 16 .

[0092] It should be noted that the repair gas will react to form a film only when it reaches a specific temperature and at the location where the laser is irradiated. No reaction to form a film will occur at a location where the specific temperature cannot be reached or where there is no laser irradiation. The repair gas molecules resonate and absorb lasers of a specific wavelength, and the precursor gas is dissociated and formed into a film after being acted upon by the laser, thereby forming the repair layer 18.

[0093] The repair layer 18 is used to fill the gap 16. The repair layer 18 fills at least part of the gap 16, and the filling amount of the repair layer 18 needs to ensure that it will not cause poor coverage of the upper material to cause disconnection. For example, the repair layer 18 fills the gap 16, and the surface of the repair layer 18 is flush with the surface of the wall of the through hole 15. For another example, the repair layer 18 fills and slightly overflows the gap 16, and the surface of the repair layer 18 protrudes from the surface of the wall of the through hole 15. Optionally, the repair layer 18 does not fill the gap 16, and the surface of the repair layer 18 is closer to the bottom of the gap 16 than the surface of the wall of the through hole 15.

[0094] Specifically, by controlling the laser to irradiate the insulating layer 13 in the gap 16, the laser can be used to locally heat the gap 16 and induce a local temperature field, and the laser can be controlled to irradiate only at a preset position to provide a basis for film formation only at a specific preset position. Then, a repair gas is introduced, and the repair gas is dissociated under the action of a specific temperature and laser to form a film, forming a repair layer 18 that fills the gap 16, achieving local thin film deposition, thereby repairing the gap 16 formed by lateral etching.

[0095] Therefore, this embodiment controls the laser, utilizes the local heating characteristics of the laser, and cooperates with the repair gas to achieve local thin film deposition, repair the gap 16 formed by lateral etching, avoid the phenomenon of broken wires caused by poor coverage of the upper material, and thus improve the yield of the thin film transistor 1.

[0096] Please refer to Figure 5-Figure 6 In one embodiment, the laser includes a plurality of sub-beams with different emission directions. The laser emitted from the laser emitter 21 is a divergent beam, which is composed of a plurality of sub-beams with different emission directions. Figure 6 As shown in L.

[0097] In the step S200 of irradiating the laser onto the insulating layer 13 located in the gap 16, the following steps are included:

[0098] S210 , providing a beam expander 22 and a focusing lens 23 disposed on one side of the laser emitter 21 .

[0099] The beam expander 22 is used to reduce the divergence of the laser so as to transmit the light beam over a longer distance. For example, the beam expander 22 changes the divergence angle of the laser so that the light emission directions of multiple sub-beams are the same, so that the laser propagates over a larger range.

[0100] The focusing mirror 23 is used to gather multiple sub-beams and focus the laser on the insulating layer 13 in the gap 16, providing a basis for subsequent film formation only at specific preset positions.

[0101] S220, enabling the beam expander 22 to receive and transmit the multiple sub-beams from the laser emitter 21, wherein the beam expander 22 is used to make the multiple sub-beams have the same light emitting direction.

[0102] S230 , enabling the focusing mirror 23 to receive and transmit the multiple sub-beams transmitted from the beam expander 22 , wherein the focusing mirror 23 is used to gather the multiple sub-beams.

[0103] S240 , making the multiple sub-beams from the focusing mirror 23 irradiate the insulating layer 13 located in the gap 16 .

[0104] Specifically, the laser emitter 21 emits laser light to the beam expander 22. Then, the beam expander 22 makes the multiple sub-beams of the laser light have the same light emission direction and transmits them to the focusing mirror 23. Subsequently, the focusing mirror 23 gathers the multiple sub-beams and transmits them to the insulating layer 13 in the gap 16.

[0105] Through the programming control of the scanning galvanometer or the three-dimensional mobile platform, laser scanning can realize selective deposition on the thin film transistor 1, realize local filling, and form a repair layer 18 that fills the gap 16.

[0106] This embodiment not only increases the propagation distance of the laser by setting the beam expander 22 and the focusing lens 23, but also allows more laser light to be focused on the insulating layer 13 in the notch 16, thereby improving the accuracy of the laser only being shot at the notch 16 and the accuracy of forming the repair layer 18 only at the notch 16, thereby improving the yield rate of the thin film transistor 1.

[0107] Please refer to Figure 7 In one embodiment, before step S200 of irradiating the laser onto the insulating layer 13 in the gap 16, the method further includes:

[0108] S201, provide a scanning electron microscope device.

[0109] S202 , scanning the notch 16 using the scanning electron microscope device to obtain position information of the notch 16 .

[0110] The scanning electron microscope device can scan the thin film transistor 1 to obtain the position information of the gap 16. The position information includes two-dimensional position information of the gap 16. For example, the two-dimensional coordinate information of the gap 16 on the X axis and the Y axis is obtained to determine the position of the gap 16.

[0111] In this embodiment, the part of the thin film transistor 1 where the under cut phenomenon occurs is observed by a scanning electron microscope device to obtain the position information of the notch 16 and select the specific position to be repaired, thereby providing a basis for the subsequent acquisition of morphological information and the formation of the repair layer 18.

[0112] Please refer to Figure 8 In one embodiment, after the step S202 of obtaining the position information of the gap 16, the method further includes:

[0113] S203, provide an optical three-dimensional analyzer.

[0114] S204 , scanning the notch 16 using the optical three-dimensional analyzer to obtain morphological information of the notch 16 .

[0115] The optical three-dimensional analyzer is used to obtain three-dimensional topographic information of the target object, and can accurately measure parameters such as the size, shape, and surface topography of the object. The topographic information includes the size information, shape information, and surface topography information of the notch 16. For example, the three-dimensional topographic information of the notch 16 on the X-axis, Y-axis, and Z-axis is obtained to determine the size, shape, and surface topography of the notch 16.

[0116] In this embodiment, the morphological information of the gap 16 is obtained by an optical three-dimensional analyzer, so as to determine the overall size, shape, and surface morphology of the deposited portion to be filled, thereby providing a basis for the subsequent formation of the repair layer 18 .

[0117] Please refer to Fig. 9 In one embodiment, after the step S204 of obtaining the morphological information of the notch 16, the method further includes:

[0118] S205, calculating and obtaining repair information based on the morphology information, wherein the repair information includes at least one of the flow rate of the repair gas, the duration of the introduction of the repair gas, the power of the laser, and the emission duration of the laser.

[0119] Based on the morphological information, the repair information can be calculated, and the repair information includes the flow rate of the repair gas, and / or the time of the repair gas introduction, and / or the power of the laser, and / or the emission time of the laser, so as to control the volume of the repair layer 18 formed. It can not only form a sufficient repair layer 18 to fill the gap 16 and avoid the phenomenon of broken wires caused by poor coverage of the upper material, but also reduce costs and improve repair efficiency.

[0120] Optionally, the repair information also includes microwave power and / or microwave duration.

[0121] Please refer to Fig.10 In one embodiment, after the step S204 of obtaining the morphological information of the notch 16, the method further includes:

[0122] S206 , forming at least one groove 161 on the surface of the notch 16 .

[0123] In step S300 of forming the repair layer 18, the following steps are included:

[0124] S207 , the repair layer 18 also fills the groove 161 .

[0125] The repair layer 18 not only fills the gap 16, but also fills the groove 161. In this embodiment, by forming the groove 161 on the surface of the gap 16, the contact area between the repair layer 18 and the insulating layer 13 can be increased, which is beneficial to improving the connection performance between the repair layer 18 and the insulating layer 13. Moreover, the repair layer 18 fills the groove 161, which can further improve the connection performance between the repair layer 18 and the insulating layer 13, thereby ensuring that the repair layer 18 can be firmly fixed to the gap 16, avoiding the phenomenon of disconnection caused by poor coverage of the upper material, and improving the yield rate of the thin film transistor 1.

[0126] Please refer to Fig.11 In one embodiment, the step S200 of irradiating the laser onto the insulating layer 13 in the gap 16 includes:

[0127] S250, provides a temperature detector.

[0128] Alternatively, the temperature detector may be an infrared pyrometer, or a thermocouple.

[0129] S260 , using the temperature detector to detect the temperature of the substrate 11 .

[0130] This embodiment uses a temperature detector to measure the temperature of the substrate 11 in real time to indirectly measure the temperature of the notch 16, so as to adjust the laser emitting device and provide a basis for the subsequent formation of the repair layer 18, thereby improving the accuracy of forming the repair layer 18 only at the notch 16, thereby improving the yield rate of the thin film transistor 1.

[0131] Please refer to Fig.12 In the step S300 of introducing the repair gas, the following steps are included:

[0132] S310, providing a flow detector.

[0133] S320, using the flow detector to detect the flow rate of the repair gas.

[0134] This embodiment uses a flow detector to measure the flow rate of the repair gas in real time, so as to adjust the repair gas introduced, improve the repair efficiency and reduce the cost.

[0135] Please refer to Fig.13 In one embodiment, the step S300 of forming the repair layer 18 includes:

[0136] S301, provide a microwave assistant.

[0137] S302 , when the repair gas is introduced, the microwave assistant is used to generate microwave radiation to the gap 16 .

[0138] This embodiment adopts a microwave assistant. When the repair gas is introduced, the microwave assistant is turned on to generate microwave radiation to the gap 16 to accelerate the reaction rate, effectively shorten the reaction cycle, improve the repair efficiency, save energy and reduce costs.

[0139] Optionally, after the step S100 of providing the thin film transistor 1, the method further includes:

[0140] The thin film transistor 1 is placed in a vacuum reaction chamber.

[0141] The laser is irradiated onto the insulating layer 13 in the gap 16, and the repair gas is introduced into the vacuum reaction chamber.

[0142] After step S300 of forming the repair layer 18, the method further includes:

[0143] The waste gas in the vacuum reaction chamber is extracted. For example, a vacuum pump is used to extract the waste gas from the vacuum reaction chamber.

[0144] Please refer to Figure 2-Figure 3 ,and Figure 14-17 In one embodiment, the step S100 of providing the thin film transistor 1 includes:

[0145] like Figure 3 As shown, the thin film transistor 1 further includes a second electrode layer 14a to be repaired, which is disposed on the wall of the through hole 15 and electrically connected to the first electrode layer 12, and the notch 16 is exposed from the second electrode layer 14a to be repaired.

[0146] It can also be understood that due to the existence of the gap 16 , after the second electrode layer 14 a to be repaired is prepared, the second electrode layer 14 a to be repaired is broken at the gap 16 , which will affect the working performance of the thin film transistor 1 .

[0147] After the step S100 of providing the thin film transistor 1, the method further includes:

[0148] S110, peeling off the second electrode layer 14a to be repaired, such as Figure 2 shown.

[0149] For example, the focused ion beam FIB is used to peel off the broken second electrode layer 14 a to be repaired on the through hole 15 along a certain angle.

[0150] Optionally, after the step S110 of stripping the second electrode layer 14a to be repaired, the method further includes:

[0151] Clean the thin film transistor 1. For example, spray the thin film transistor 1 to remove impurities and dust, which provides a basis for subsequent repair of the gap 16 and re-preparation of the second electrode layer 14b. Fig.16 shown.

[0152] After the step S300 of forming the repair layer 18, the method further includes:

[0153] S330, forming a second electrode layer 14b disposed on the side of the insulating layer 13 away from the first electrode layer 12, the second electrode layer 14b also covers the hole wall of the through hole 15 and the repair layer 18, and the second electrode layer 14b is electrically connected to the first electrode layer 12. Fig.17 shown.

[0154] Since the repair layer 18 filling the gap 16 is formed, the second electrode layer 14 b can be re-formed on the insulating layer 13 and the repair layer 18 , and the second electrode layer 14 b will not be disconnected, thereby improving the yield rate of the thin film transistor 1 .

[0155] Optionally, after the step S300 of forming the repair layer 18, the method further includes:

[0156] The thin film transistor 1 is cleaned again. For example, a glass substrate is cleaned using a cleaning machine.

[0157] The scanning electron microscope device is used to scan the thin film transistor 1 to detect whether the gap 16 is filled with the repair layer 18 .

[0158] After the step S330 of forming the second electrode layer 14b, the method further includes:

[0159] The scanning electron microscope device is used to scan the thin film transistor 1 to detect whether the second electrode layer 14b is broken.

[0160] Please refer to Figure 1-Figure 18 In one embodiment, the first electrode layer 12 is a common electrode layer 172, the second electrode layer 14a to be repaired is a pixel electrode layer 176, the notch 16 is provided on the hole wall of the first sub-through hole 151, and penetrates the second sub-insulating layer 132, and the repair method of the display panel is described in detail:

[0161] In the first step, a FIB-SEM device is used to peel off the pixel electrode layer 176 to be repaired with the broken line on the upper layer of the first sub-through hole 151 along a certain angle using a focused ion beam FIB. Figure 2 shown.

[0162] The second step is to clean and peel off the thin film transistor 1 after the pixel electrode layer 176 to be repaired. Fig.13 shown.

[0163] The third step is to use a SEM device, i.e., a scanning electron microscope device, to confirm the under cut part, i.e., to confirm the position information of the gap 16. A three-dimensional optical analyzer is used to obtain the overall morphology of the part to be deposited and filled, i.e., to obtain the morphology information of the gap 16. In addition, by using a scanning galvanometer or a three-dimensional mobile platform programming control, selective deposition can be achieved on the thin film transistor 1 through laser scanning.

[0164] Step 4: The temperature of the substrate 11 is measured in real time by an infrared pyrometer or thermocouple in the gas system. In addition, the precursor gases SiH4 and NH3 and the carrier gas Ar are introduced into the repair gas control system, and the flow rate of the repair gas is accurately detected and controlled by the flow meter. The microwave assistor accelerates the reaction rate and performs deposition to form a repair layer 18 on the gap 16. Figure 4 In addition, an exhaust pump is used to extract the waste gas from the reaction chamber.

[0165] When the repair gas is introduced, a microwave assistant is used to generate microwave radiation to the gap 16 to accelerate the reaction rate.

[0166] Step 5: After the deposition and filling are completed, the thin film transistor 1 is cleaned by a cleaning machine, and a FIB-SEM device is used to detect whether the gap 16 is filled.

[0167] Step 6: Sputtering of the pixel electrode layer 176 thin film is performed. After the sputtering is completed, the thin film transistor 1 is sliced ​​and tested to check if there is no under-cut phenomenon or disconnection. Fig.14 shown.

[0168] In this embodiment, the under cut portion is filled by pyrolysis LCVD (laser chemical vapor deposition method). Pyrolysis LCVD mainly utilizes the local heating characteristics of the laser to induce a local temperature field on the surface of the substrate 11, thereby realizing local thin film deposition. At the same time, pyrolysis LCVD can program the scanning path of the laser beam on the thin film transistor 1 through a scanning galvanometer or a three-dimensional mobile platform. Through laser scanning, deposition can be realized in the selected under cut area of ​​the thin film transistor 1, realizing the preparation of micro-nano structures with complex pattern structures.

[0169] In addition, an infrared pyrometer or a thermocouple is used to measure the temperature of the substrate 11 in real time, and the flow rate of the precursor gas and the carrier gas is accurately controlled by a flow meter. At the same time, the microwave assistor accelerates the reaction rate of the repair gas, accurately fills the under cut part, and plans the required gas flow to form a denser film.

[0170] Please refer to Fig.17 The present application further provides a display panel, the display panel comprising a thin film transistor 1, the thin film transistor 1 being obtained by the display panel repair method provided by the first aspect of the present application;

[0171] The thin film transistor 1 includes a substrate 11, a first electrode layer 12 arranged on one side of the substrate 11, and an insulating layer 13 covering the first electrode layer 12, wherein the insulating layer 13 has a through hole 15 exposing the first electrode layer 12, and a notch 16 penetrating the hole wall of the through hole 15; the thin film transistor 1 also includes a repair layer 18, and the repair layer 18 fills the notch 16.

[0172] The display panel provided in this embodiment, by adopting the thin film transistor 1 obtained by the repair method provided in the present application, can achieve local thin film deposition, repair the gap 16 formed by lateral etching, avoid the phenomenon of broken wires caused by poor coverage of the upper material, and thus improve the yield rate of the thin film transistor 1.

[0173] Please refer to Fig.19 In one embodiment, the surface of the notch 16 is further provided with at least one groove 161 , and the repair layer 18 also fills the groove 161 .

[0174] Optionally, the groove 161 includes a first portion and a second portion, the first portion is farther from the opening of the groove 161 than the second portion, and the width of the first portion is greater than the width of the second portion. Optionally, the width of the groove 161 gradually decreases along the groove bottom wall of the groove 161 to the opening of the groove 161. Optionally, there are multiple grooves 161, and the multiple grooves 161 are spaced apart on the surface of the notch, and the spacing between two adjacent grooves 161 is equal.

[0175] The repair layer 18 not only fills the gap 16, but also fills the groove 161. In this embodiment, by forming the groove 161 on the surface of the gap 16, the contact area between the repair layer 18 and the insulating layer 13 can be increased, which is beneficial to improving the connection performance between the repair layer 18 and the insulating layer 13. Moreover, the repair layer 18 fills the groove 161, which can further improve the connection performance between the repair layer 18 and the insulating layer 13, thereby ensuring that the repair layer 18 can be firmly fixed to the gap 16, avoiding the phenomenon of disconnection caused by poor coverage of the upper material, and improving the yield rate of the thin film transistor 1.

[0176] Please refer to Fig. 20 In one embodiment, the thin film transistor 1 further includes a bonding portion 162 , wherein the bonding portion 162 is disposed on a groove wall of the groove 161 , and the bonding portion 162 is used to bond and connect the repair layer 18 and the insulating layer 13 .

[0177] The bonding part 162 is arranged in the groove 161, which is convenient for positioning and limiting the position of the bonding part 162 and can reduce the influence of the bonding part 162 on the repair layer 18. In addition, the bonding part 162 can be a high temperature adhesive, such as a high temperature resistant inorganic adhesive, ERA919 insulating high temperature adhesive, etc.

[0178] This embodiment can further improve the connection performance between the repair layer 18 and the insulating layer 13 by providing the bonding portion 162, thereby ensuring that the repair layer 18 can be firmly fixed to the notch 16, avoiding the phenomenon of broken wires caused by poor coverage of the upper material, and improving the yield rate of the thin film transistor 1.

[0179] Please refer to Fig.21 In a third aspect, the present application further provides an electronic device 3 , which includes a housing 31 and a display panel 32 provided above in the present application, and the display panel 32 is mounted on the housing 31 .

[0180] The electronic device 3 provided in this embodiment adopts the display panel 32 provided in the above application. The thin film transistor 1 of the display panel 32 adopts a repair method to achieve local thin film deposition, repair the gap 16 formed by lateral etching, avoid the phenomenon of broken wires caused by poor coverage of the upper material, thereby improving the yield rate of the thin film transistor 1.

[0181] The above is a detailed introduction to the contents provided in the implementation mode of the present application. This article explains and illustrates the principles and implementation modes of the present application. The above explanation is only used to help understand the method and core idea of ​​the present application. At the same time, for those skilled in the art, according to the idea of ​​the present application, there will be changes in the specific implementation mode and application scope. In summary, the contents of this specification should not be understood as limiting the present application.

Claims

1. A method for repairing a display panel, characterized in that: The repair method comprises: A thin film transistor and a laser emitter are provided, wherein the thin film transistor comprises a substrate, a first electrode layer disposed on one side of the substrate, and an insulating layer covering the first electrode layer, wherein the insulating layer has a through hole exposing the first electrode layer and a notch penetrating a hole wall of the through hole; Allowing the laser from the laser emitter to radiate the insulating layer in the notch to heat the insulating layer in the notch; A repairing gas is introduced to form a repairing layer filling the gap.

2. The method for repairing a display panel according to claim 1, wherein: The laser includes a plurality of sub-beams with different emission directions; the step of emitting the laser to the insulating layer located in the gap includes: Providing a beam expander and a focusing mirror disposed on one side of the laser emitter; The beam expander receives and transmits a plurality of sub-beams from the laser emitter, and the beam expander is used to make the light emitting directions of the plurality of sub-beams the same; The focusing mirror receives and transmits a plurality of sub-beams from the beam expander, and the focusing mirror is used to gather the plurality of sub-beams; A plurality of sub-beams from the focusing mirror are made to project onto the insulating layer located in the gap.

3. The method for repairing a display panel according to claim 1, wherein: Before the step of irradiating the laser onto the insulating layer in the gap, the method further comprises: Provide scanning electron microscope equipment; Scanning the notch using the scanning electron microscope device to obtain position information of the notch; Provide optical 3D analyzer; The optical three-dimensional analyzer is used to scan the notch to obtain the morphological information of the notch.

4. The method for repairing a display panel according to claim 3, wherein: After the step of obtaining the morphological information of the notch, the method further includes: Calculate and obtain repair information according to the morphology information, wherein the repair information includes at least one of the flow rate of the repair gas, the duration of the introduction of the repair gas, the power of the laser, and the emission duration of the laser; and / or, forming at least one groove on the surface of the notch; The step of forming the repair layer includes: The repair layer also fills the groove.

5. The method for repairing a display panel according to claim 1, wherein: The step of irradiating the laser onto the insulating layer in the gap includes: Provide a temperature detector; Using the temperature detector to detect the temperature of the substrate; The step of introducing the repair gas comprises: Provide a flow detector; Using the flow detector to detect the flow rate of the repair gas; The step of forming the repair layer includes: Microwave assist is available; When the repair gas is introduced, the microwave assistant is used to generate microwave radiation to the gap.

6. The method for repairing a display panel according to claim 1, wherein: The step of providing the thin film transistor includes: The thin film transistor further includes a second electrode layer to be repaired, the second electrode layer to be repaired is arranged on the wall of the through hole and electrically connected to the first electrode layer, and the notch is exposed from the second electrode layer to be repaired; After the step of providing the thin film transistor, the method further comprises: peeling off the second electrode layer to be repaired; After the step of forming the repair layer, the method further comprises: A second electrode layer is formed on the side of the insulating layer away from the first electrode layer, the second electrode layer also covers the through hole wall and the repair layer, and the second electrode layer is electrically connected to the first electrode layer.

7. A display panel, characterized in that: The display panel comprises a thin film transistor, and the thin film transistor is obtained by the display panel repair method according to any one of claims 1 to 6; The thin film transistor includes a substrate, a first electrode layer arranged on one side of the substrate, and an insulating layer covering the first electrode layer, wherein the insulating layer has a through hole exposing the first electrode layer and a gap penetrating the wall of the through hole; the thin film transistor also includes a repair layer, which fills the gap.

8. The display panel according to claim 7, wherein: The surface of the notch is further provided with at least one groove, and the repair layer further fills the groove.

9. The display panel according to claim 8, wherein: The thin film transistor further comprises a bonding portion, which is arranged on a groove wall of the groove and is used for bonding and connecting the repairing layer and the insulating layer.

10. An electronic device, characterized in that: The electronic device comprises a housing and a display panel as described in any one of claims 7 to 9, wherein the display panel is mounted on the housing.

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