A method for fabricating an integrated semiconductor nanowire optoelectronic device

Abstract

The application discloses a preparation method of an integrated semiconductor nanowire photoelectric device and belongs to the technical field of photoelectrons. The application extracts different material type semiconductor nanowires dispersed on a pyramid silicon wafer by using a mechanical hand (tungsten needle) of a focused ion beam-scanning electron beam (FIB-SEM) double-beam electron microscope, respectively transfers the nanowires to the same interdigital electrode, and fixes the nanowires by depositing a conductive material through the FIB to form a photoelectric detector integrated with multiple semiconductor nanowires, which not only widens the detection wave band of the device, but also maintains the advantages of the respective nanowires. Therefore, the use of the pyramid silicon wafer dispersion substrate and the FIB-SEM double-beam electron microscope provides a brand-new solution for the preparation of an integrated different material nanowire wide-spectrum high-performance photoelectric detector.

Description

Technical Field

[0001] This invention belongs to the field of optoelectronic technology, specifically relating to a method for fabricating an integrated semiconductor nanowire optoelectronic device. Background Technology

[0002] Photodetectors, devices that convert detected light signals into electrical signals to detect photons, are widely used in daily life, industry, agriculture, and the military. Semiconductor materials are the core of photodetectors. In the past few decades, silicon photonics has made great strides, breaking through many key technologies and barriers.

[0003] Silicon photodetectors are primarily used for detecting ultraviolet to near-infrared (INR) light. However, due to silicon's relatively large bandgap (Eg = 1.12 eV), its absorption cutoff wavelength is 1.1 μm, hindering the detection of longer wavelengths. Compared to silicon, germanium has smaller indirect bandgap (0.66 eV) and direct bandgap (0.8 eV), resulting in higher electron and hole mobility, and an absorption cutoff wavelength of 1.8 μm. In the development of broadband detectors, materials with different response bands are epitaxially stacked on the same substrate, leading to problems such as lattice mismatch, thermal mismatch, and compositional segregation, which limits the development of high-performance broadband detectors.

[0004] With the development of nanotechnology, many nanostructures, such as nanowires, nanotubes, nanosheets, quantum dots, and quantum wells, have achieved excellent performance in the field of photodetectors. Among them, one-dimensional single nanowire structures, due to quantum size effects, large specific surface area, and smaller size, exhibit higher photosensitivity compared to bulk materials. Therefore, dual-semiconductor nanowire optoelectronic devices combining silicon and germanium can achieve broadband detection. However, due to current process limitations, current nanowire photodetectors are based on single nanowires or nanowire arrays. Although single nanowire photodetectors fabricated using traditional photolithography processes have fast response speeds and high sensitivity, they cannot achieve the integration of semiconductor nanowires made of different materials, have limited detection bands, and involve complex processes.

[0005] Therefore, this invention explores a method for fabricating an integrated multi-semiconductor nanowire optoelectronic device that is relatively simple in process, has a wide detection band, and maintains high sensitivity. Summary of the Invention

[0006] In view of the shortcomings of the prior art, the present invention provides a method for fabricating integrated semiconductor nanowire optoelectronic devices.

[0007] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0008] A method for fabricating an integrated semiconductor nanowire optoelectronic device includes the following steps:

[0009] (1) Using chemical vapor deposition technology of FIB-SEM dual-beam electron microscope, one end of semiconductor nanowires dispersed on pyramid silicon wafers was welded to tungsten needles, and then the semiconductor nanowires were extracted and transferred to interdigitated electrodes.

[0010] (2) The other end of the semiconductor nanowire is welded to the interdigitated electrode by chemical vapor deposition.

[0011] (3) Use gallium ion beam to cut off one end of the connection between the tungsten needle and the semiconductor nanowire, deposit conductive material at the cut point of the semiconductor nanowire, and weld the semiconductor nanowire to the interdigitated electrode to complete the transfer and fixation of the semiconductor nanowire.

[0012] (4) Repeat steps (1)-(3) with a tungsten needle using a FIB-SEM dual-beam electron microscope to transfer and fix other semiconductor nanowires onto the same interdigital electrode.

[0013] The semiconductor nanowires are ZnO nanowires, Ga2O3 nanowires, SnO2 nanowires, WO3 nanowires, TiO2 nanowires, Si nanowires, Ge nanowires, InP nanowires, MoS2 nanowires, CdS nanowires, GaAs nanowires, GeSn nanowires, GaSb nanowires, InSb nanowires, InAs nanowires, or InGaAs nanowires.

[0014] The other semiconductor nanowires are one of the semiconductor nanowires in step (1) from ZnO, Ga2O3, SnO2, WO3, TiO2, Si, Ge, InP, MoS2, CdS, GaAs, GeSn, GaSb, InSb, InAs, or InGaAs.

[0015] In a preferred embodiment of the present invention, in step (4), steps (1)-(3) are repeated more than once; the semiconductor nanowires integrated on the integrated semiconductor nanowire optoelectronic device are two or more of ZnO, Ga2O3, SnO2, WO3, TiO2, Si, Ge, InP, MoS2, CdS, GaAs, GeSn, GaSb, InSb, InAs, and InGaAs.

[0016] In a preferred embodiment of the present invention, in step (3), the conductive material is carbon, platinum or tungsten.

[0017] In a preferred embodiment of the present invention, the semiconductor nanowire has a diameter of (50-200) nm and a length of (2-20) μm.

[0018] As a preferred embodiment of the present invention, the method for preparing the pyramidal silicon wafer with dispersed semiconductor nanowires includes the following steps:

[0019] S1: Clean the silicon substrate and then etch it in the second etching solution to obtain a pyramid silicon wafer;

[0020] S2: Semiconductor nanowires are dispersed in ethanol to obtain a semiconductor nanowire dispersion. Then, the semiconductor nanowire dispersion is dropped onto a pyramid silicon wafer and dried to obtain a pyramid silicon wafer with dispersed semiconductor nanowires.

[0021] The pyramidal silicon wafer with dispersed semiconductor nanowires prepared by this invention is more conducive to the extraction of tungsten targets from nanowires by FIB-SEM dual-beam electron microscopy, and can also increase the success rate of extraction.

[0022] As a preferred embodiment of the present invention, the second etching solution is a mixed aqueous solution of KOH and isopropanol, wherein the weight percentage of KOH is 5-15 wt% and the volume percentage of isopropanol is 2-8% vol%; the silicon substrate can be etched with the above-defined second etching solution to obtain a pyramid silicon wafer.

[0023] More preferably, the second etching solution is a mixed aqueous solution of KOH and isopropanol, wherein the weight percentage of KOH is 10 wt% and the volume percentage of isopropanol is 5 vol%.

[0024] In a preferred embodiment of the present invention, in step S2, after cleaning the silicon substrate, it is placed in the second etching solution for etching for 10-30 minutes, then immersed in concentrated nitric acid and sonicated, then rinsed clean, then immersed in 10% vol HF solution, and finally rinsed clean and dried to obtain a pyramid silicon wafer.

[0025] As a preferred embodiment of the present invention, the method for fabricating the integrated semiconductor nanowire optoelectronic device includes the following steps:

[0026] (1) Using a tungsten needle of a FIB-SEM dual-beam electron microscope, one end of the semiconductor A nanowire dispersed on the pyramid silicon wafer was welded, and then the semiconductor A nanowire was extracted and transferred to the interdigitated electrode.

[0027] (2) The other end of the semiconductor A nanowire is welded to the interdigitated electrode by platinum deposition using a platinum needle.

[0028] (3) Use gallium ion beam to cut off the connection between the tungsten needle and one end of the semiconductor A nanowire, deposit platinum at the cut point of the semiconductor A nanowire, and weld the semiconductor A nanowire to the interdigitated electrode to complete the transfer and fixation of the semiconductor A nanowire.

[0029] (4) Using a tungsten needle of a FIB-SEM dual-beam electron microscope, one end of the semiconductor B nanowires on the pyramid silicon wafer with dispersed semiconductor B nanowires is welded, and then the semiconductor B nanowires are extracted and transferred to the interdigitated electrode with semiconductor A nanowires fixed.

[0030] (5) One end of the semiconductor B nanowire is welded to the interdigitated electrode by platinum deposition using a platinum needle.

[0031] (6) Use gallium ion beam to cut the connection between tungsten needle and semiconductor B nanowire, deposit platinum at the cut point of semiconductor B nanowire, weld semiconductor B nanowire to interdigitated electrode, complete the transfer and fixation of semiconductor B nanowire, and obtain integrated dual semiconductor nanowire optoelectronic device.

[0032] In a preferred embodiment of the present invention, the semiconductor A nanowire and semiconductor B nanowire are selected from ZnO nanowire, Ga2O3 nanowire, SnO2 nanowire, WO3 nanowire, TiO2 nanowire, Si nanowire, Ge nanowire, InP nanowire, MoS2 nanowire, CdS nanowire, GaAs nanowire, GeSn nanowire, GaSb nanowire, InSb nanowire, InAs nanowire or InGaAs nanowire, and the semiconductor A nanowire and semiconductor B nanowire are different.

[0033] ZnO nanowires, Ga2O3 nanowires, SnO2 nanowires, WO3 nanowires, TiO2 nanowires, InP nanowires, MoS2 nanowires, CdS nanowires, GaAs nanowires, GeSn nanowires, GaSb nanowires, InSb nanowires, InAs nanowires, or InGaAs nanowires can all be prepared using conventional methods in the art.

[0034] In a preferred embodiment of the present invention, the preparation method of the silicon nanowire dispersion includes the following steps:

[0035] S1: Clean the silicon substrate and then place it in the deposition solution to deposit silver particles to obtain a silicon wafer covered with silver particles;

[0036] S2: The silicon wafer covered with silver particles is placed in the first etching solution for etching to obtain a silicon nanowire array;

[0037] S3: A silicon nanowire dispersion was obtained by sonicating a silicon nanowire array in ethanol.

[0038] In a preferred embodiment of the present invention, the sediment is a mixed aqueous solution of AgNO3 and HF, wherein the molar concentration of AgNO3 is 0.01M and the molar concentration of HF is 4.6M.

[0039] As a preferred embodiment of the present invention, the first etching solution is a mixed aqueous solution of H2O2 and HF, wherein the molar concentration of H2O2 is 0.3M and the molar concentration of HF is 4.6M; the second etching solution is a mixed aqueous solution of KOH and isopropanol, wherein the weight percentage of KOH is 10wt% and the volume percentage of isopropanol is 5%vol.

[0040] As a preferred embodiment of the present invention, the preparation method of the germanium nanowire dispersion includes the following steps:

[0041] Step (1): Clean the silicon substrate and then deposit gold particles by magnetron sputtering to obtain a silicon wafer covered with gold particles;

[0042] Step (2): Place the silicon wafer covered with gold particles into a tube furnace, use germanium powder as the evaporation source and gold particles as the catalyst, and grow germanium nanowires by thermal evaporation on the silicon wafer under an argon atmosphere.

[0043] Step (3): Ultrasonically dissolve the germanium nanowires in ethanol on a silicon wafer on which germanium nanowires have grown.

[0044] The present invention uses a thermal evaporation method to prepare germanium nanowires, which are then dispersed on a pyramidal silicon wafer. This method is more conducive to the extraction of germanium nanowires by tungsten targets using FIB-SEM dual-beam electron microscopy and can also increase the success rate of extraction.

[0045] In a preferred embodiment of the present invention, the initial vacuum degree of the magnetron sputtering is 4 Pa, the sputtering power is 10 W, and the sputtering time is 60 s.

[0046] In a preferred embodiment of the present invention, the temperature of the thermal evaporation is 1000°C, the holding time is 90 min, and high-purity argon is used as the carrier gas.

[0047] As a preferred embodiment of the present invention, the germanium nanowire dispersion is relatively sparse and requires repeated drying and titration five times.

[0048] Compared with existing technologies, the advantages of this invention are as follows: This invention utilizes a FIB-SEM dual-beam electron microscope to extract semiconductor nanowires of different material types dispersed on a pyramidal silicon wafer, transfers them to interdigitated electrodes with a spacing of 5 μm, and fixes the semiconductor nanowires through platinum deposition using FIB, thus constructing a dual nanowire photodetector integrating multiple nanowires. This broadens the detection band while maintaining the high sensitivity of nanowire structure photodetectors. Furthermore, the use of a pyramidal silicon wafer dispersion substrate and a FIB-SEM dual-beam electron microscope provides a completely new solution for the fabrication of broadband photodetectors integrating nanowires of different materials. Attached Figure Description

[0049] Figure 1This is a schematic diagram of the structure of an integrated semiconductor nanowire optoelectronic device.

[0050] Figure 2 This is a scanning electron microscope image of the pyramid-shaped silicon wafer prepared in Example 1.

[0051] Figure 3 This is a cross-sectional scanning electron microscope image of the silicon nanowire array prepared in Example 1.

[0052] Figure 4 This is a scanning electron microscope image of the germanium nanowires prepared in Example 1.

[0053] Figure 5 This is a scanning electron microscope image of the gold tower silicon wafer with dispersed silicon nanowires prepared in Example 1.

[0054] Figure 6 This is a scanning electron microscope image of the gold tower silicon wafer with dispersed germanium nanowires prepared in Example 1.

[0055] Figure 7 This is a scanning electron microscope image of silicon nanowires extracted by a tungsten needle using FIB-SEM dual-beam electron microscopy in Example 1.

[0056] Figure 8 This is a scanning electron microscope image of silicon nanowires extracted by a tungsten needle and transferred to the interdigitated electrode using FIB-SEM dual-beam electron microscopy in Example 1.

[0057] Figure 9 This is a scanning electron microscope image of the integrated semiconductor nanowire photodetector device prepared in Example 1.

[0058] In the figure, 1-silicon substrate, 2-silicon dioxide layer, 3-gold interdigitated electrode, 4-single silicon nanowire, 5-single germanium nanowire, 6-platinum metal. Detailed Implementation

[0059] To better illustrate the purpose, technical solution, and advantages of the present invention, the present invention will be further described below in conjunction with specific embodiments.

[0060] Example 1

[0061] A method for preparing a pyramidal silicon wafer with dispersed silicon nanowires includes the following steps:

[0062] S1: Clean the single-sided polished n-type silicon substrate with dimensions of 1cm×1cm×0.65cm using the RCA standard cleaning process, and dry it with nitrogen gas for later use.

[0063] S2: Prepare an etching solution with a concentration of 10wt% KOH, using deionized water as the solvent, and add 5% vol isopropanol. Sonicate for 15 min.

[0064] S3: Immerse the cleaned n-type silicon wafer in KOH etching solution for 20 minutes, then soak it in concentrated nitric acid and sonicate for 15 minutes. Rinse thoroughly with deionized water, then soak in 10% vol HF solution for 3 minutes. Finally, rinse thoroughly with deionized water and dry with nitrogen to obtain the pyramidal silicon wafer. Figure 2 As shown.

[0065] S4: Prepare standard deposition solution: a mixed aqueous solution of AgNO3 and HF, wherein the molar concentration of AgNO3 is 0.01M and the molar concentration of HF is 4.6M; prepare standard etching solution: a mixed aqueous solution of H2O2 and HF, wherein the molar concentration of H2O2 is 0.3M and the molar concentration of HF is 4.6M; both the standard deposition solution and the standard etching solution are magnetically stirred at room temperature for 2 hours to ensure the homogeneity of the solution.

[0066] S5: Place the cleaned n-type silicon substrate with the polished side facing up into the standard deposition solution and deposit for 1 minute. Then remove it to obtain a silicon wafer covered with silver particles.

[0067] S6: Immerse the silicon wafer covered with silver particles in a standard etching solution and etch at room temperature for 1 hour. Remove and rinse thoroughly with deionized water. Soak in a 30% nitric acid solution for 1 hour to remove residual silver. Then immerse in 10% vol HF for 3 minutes, followed by rinsing with deionized water to remove the surface oxide layer, resulting in a silicon wafer etched with a silicon nanowire array. Figure 3 As shown.

[0068] S7: Place the silicon wafer with the etched silicon nanowire array into a glass test tube, add ethanol to cover the silicon wafer, and sonicate for 5 minutes to obtain a silicon nanowire dispersion.

[0069] S8: Using a disposable dropper, take 1 mL of silicon nanowire dispersion and drop it onto the prepared pyramidal silicon wafer. After drying, silicon nanowires dispersed on the pyramidal silicon wafer are obtained (e.g., Figure 5 (As shown), and store them in a vacuum environment to prevent the nanowires from being oxidized.

[0070] A method for preparing a pyramidal silicon wafer with dispersed germanium nanowires includes the following steps:

[0071] Step (1): Place the cleaned n-type single-sided polished silicon substrate into a magnetron sputtering instrument to sputter gold. Set the initial vacuum degree to 4Pa, the sputtering power to 10W, and the sputtering time to 60s. After sputtering, an n-type silicon substrate covered with gold particles is obtained.

[0072] Step (2): Place the n-type silicon substrate covered with gold particles near the furnace opening of a tube furnace. Place the germanium powder in the high-temperature zone in the center of the tube furnace. Set the temperature to 1000℃ and hold for 90 minutes. Maintain atmospheric pressure. Use germanium powder as the evaporation source and gold particles as the catalyst. Under a high-purity argon atmosphere, thermally evaporate and grow germanium nanowires (e.g., Figure 4 (As shown).

[0073] Step (3): Place the silicon wafer with grown germanium nanowires into a glass test tube, add ethanol to cover the silicon wafer, and sonicate for 5 minutes to obtain a germanium nanowire dispersion.

[0074] Step (4): Using a dropper, take 1 mL of germanium nanowire dispersion and drop it onto the prepared pyramid silicon wafer. After repeated titration and drying five times, germanium nanowires dispersed on the pyramid silicon wafer are obtained (e.g., Figure 6 (As shown), and store them in a vacuum environment to prevent the nanowires from being oxidized.

[0075] A method for fabricating an integrated dual-semiconductor nanowire optoelectronic device includes the following steps:

[0076] (1) Assemble a pyramidal silicon wafer with 5μm spacing gold interdigitated electrodes and dispersed silicon or germanium nanowires onto the stage of a FIB-SEM dual-beam electron microscope and evacuate the vacuum. First, locate suitable silicon nanowires on the pyramidal silicon wafer with dispersed silicon nanowires under the electron beam window, and keep the silicon nanowires horizontal by rotating the stage.

[0077] (2) By confocalizing the electron beam window (electron beam window voltage 5kV, current 86pA, ion beam window voltage 30kV), the same silicon nanowire is found in both the electron beam window and the ion beam window. The stage is rotated to 0° and the beam current of the ion beam window is adjusted to 18pA to avoid the silicon nanowire being damaged by the gallium ion beam. A tungsten needle is inserted, and the electron beam window and the ion beam window are observed simultaneously. The tungsten needle is then moved to contact the silicon nanowire.

[0078] (4) Select a rectangular deposition frame in the ion beam window and adjust it to a suitable size (adjust as needed based on actual conditions), and place it in the contact area between the silicon nanowire and the tungsten needle; use an ion beam to deposit platinum metal, with an ion beam current of 18 pA and a thickness of 500 nm; after deposition, slowly lift the tungsten needle to transfer the silicon nanowire onto the tungsten needle (e.g., ...). Figure 7 As shown in the figure, the extraction of silicon nanowires was completed.

[0079] (5) Locate the silicon-backed gold interdigitated electrode in the electron beam window. Rotate the stage to keep the interdigitated electrode in a vertical position. Select any one of the four corners of the interdigitated electrode for subsequent nanowire transfer.

[0080] (6) By confocal focusing on both the ion beam window and the electron beam window, the pre-selected position for transferring the nanowire is found. The stage is rotated to 0°, and a tungsten needle with silicon nanowires is inserted. First, the position is observed through the electron beam window, and then the two ends of the silicon nanowires are moved to the sides of the electrode (e.g., ...). Figure 8 (As shown), and then observed under the ion beam window, the end of the silicon nanowire that is not in contact with the tungsten needle is slowly moved to the contact electrode.

[0081] (7) Select a rectangular deposition frame in the electron beam window, adjust it to 1μm×1μm, set the thickness to 500nm, place it at the connection between the silicon nanowire and the gold electrode, change the electron beam current to 0.69nA, and use electron beam deposition to weld the silicon nanowire and the electrode at one end together.

[0082] (8) Select a rectangular etching frame in the ion beam window and adjust it to a suitable size. Place it at the connection between the silicon nanowire and the tungsten needle. Adjust the ion beam current to 18pA and the etching depth to be slightly larger than the diameter of the nanowire. Cut off the end of the silicon nanowire connected to the tungsten needle with a gallium ion beam. Deposit platinum in the electron beam window to connect the cut end of the silicon nanowire to the gold electrode. The size of the deposited platinum is also 1μm×1μm×0.5μm, thus completing the transfer and fixation of the silicon nanowire.

[0083] (9) Under the electron beam window, find suitable germanium nanowires on the pyramid silicon wafer with dispersed germanium nanowires, and keep the germanium nanowires in a horizontal state by rotating the worktable.

[0084] (10) By confocalizing the electron beam window, the same germanium nanowire is found in both the electron beam window and the ion beam window. The stage is rotated to 0° and the beam current of the ion beam window is adjusted to 18pA to avoid damage to the germanium nanowire by gallium ions. A tungsten needle is inserted and the electron beam window and ion beam window are observed simultaneously. The tungsten needle is then moved to contact the silicon nanowire.

[0085] (11) Select a rectangular deposition frame under the ion beam window. Adjust the rectangular frame to a suitable size according to the size of the nanowire and place it in the contact area between the germanium nanowire and the tungsten needle. Use an ion beam to deposit metallic platinum with a deposition beam current of 18 pA and a thickness of 500 nm. After deposition, slowly lift the tungsten needle to transfer the germanium nanowire onto the tungsten needle and complete the extraction of the germanium nanowire.

[0086] (12) Locate the successfully transferred silicon nanowire on the interdigitated electrode using the electron beam window, adjust the interdigitated electrode to a vertical position, and select a position near the electrode connected to the silicon nanowire for subsequent transfer of germanium nanowire.

[0087] (13) By confocaling the ion beam window and electron beam window, find the position of the germanium nanowire to be transferred at the same time. Turn the stage to 0°, insert the tungsten needle with the germanium nanowire attached, and observe the electron beam window and ion beam window at the same time. Slowly move the end of the germanium nanowire that is not in contact with the tungsten needle to the contact electrode.

[0088] (14) Select a rectangular deposition frame in the electron beam window, adjust it to 1μm×1μm, set the thickness to 500nm, place it at the connection between the germanium nanowire and the gold electrode, and use electron beam deposition to weld the end of the germanium nanowire in contact with the gold electrode together.

[0089] (15) Select a rectangular etching frame in the ion beam window and adjust it to a suitable size. Place it at the connection between the germanium nanowire and the tungsten needle. Adjust the ion beam current to 18pA and the etching depth to be slightly greater than the diameter of the nanowire. Cut off the end of the germanium nanowire connected to the tungsten needle with a gallium ion beam. Deposit platinum of the same size in the electron beam window and connect the cut end of the germanium nanowire to the gold electrode to complete the transfer and fixation of the germanium nanowire.

[0090] (16) After transferring and welding silicon nanowires and germanium nanowires onto the electrode (e.g.) Figure 9 As shown in the figure, the device fabrication was completed; the silicon nanowire and germanium nanowire need to be on the same electrode and close to each other to ensure that the laser can simultaneously irradiate the two nanowires during subsequent photoelectric testing.

[0091] Silicon has a detection wavelength range of 0.4-1.1 μm, and single silicon nanowire photodetectors are mainly used for detecting visible light and part of the infrared spectrum. Germanium, on the other hand, has a detection wavelength range of 0.7-1.8 μm, and single germanium nanowire photodetectors can detect near-infrared light with wavelengths greater than 1.1 μm. This embodiment integrates silicon and germanium nanowires onto a single detector, extending the detection wavelength range (visible to near-infrared). Furthermore, the sensitivity of the nanowire-based silicon and germanium integrated photodetector to visible to near-infrared light is not significantly lower than that of a single nanowire photodetector.

[0092] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit the scope of protection of the present invention. Although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of the present invention without departing from the essence and scope of the technical solutions of the present invention.

Claims

1. A method for fabricating an integrated semiconductor nanowire optoelectronic device, characterized in that, Includes the following steps: (1) Using chemical vapor deposition with FIB-SEM dual-beam electron microscope, one end of the semiconductor nanowires on the pyramid silicon wafer with dispersed semiconductor nanowires was welded to a tungsten needle, and then the semiconductor nanowires were extracted. (2) The other end of the semiconductor nanowire is welded to the interdigitated electrode using chemical vapor deposition technology; (3) Use gallium ion beam to cut off one end of the connection between the tungsten needle and the semiconductor nanowire, deposit conductive material at the cut point of the semiconductor nanowire, and weld the semiconductor nanowire to the interdigitated electrode to complete the transfer and fixation of the semiconductor nanowire; (4) Using a tungsten needle with a FIB-SEM dual-beam electron microscope, repeat steps (1)-(3) to transfer and fix other semiconductor nanowires onto the same interdigitated electrode to obtain an integrated semiconductor nanowire optoelectronic device; The semiconductor nanowires integrated on the integrated semiconductor nanowire optoelectronic device are two or more of the following: ZnO nanowires, Ga2O3 nanowires, SnO2 nanowires, WO3 nanowires, TiO2 nanowires, Si nanowires, Ge nanowires, InP nanowires, MoS2 nanowires, CdS nanowires, GaAs nanowires, GeSn nanowires, GaSb nanowires, InSb nanowires, InAs nanowires, and InGaAs nanowires.

2. The method for fabricating the integrated semiconductor nanowire optoelectronic device as described in claim 1, characterized in that, The method for preparing the pyramidal silicon wafer with dispersed semiconductor nanowires includes the following steps: S1: Clean the silicon substrate and then etch it in the second etching solution to obtain a pyramid silicon wafer; S2: Semiconductor nanowires are dispersed in ethanol to obtain a semiconductor nanowire dispersion. Then, the semiconductor nanowire dispersion is dropped onto a pyramid silicon wafer and dried to obtain a pyramid silicon wafer with dispersed semiconductor nanowires.

3. The method for fabricating the integrated semiconductor nanowire optoelectronic device as described in claim 2, characterized in that, The second etching solution is a mixed aqueous solution of KOH and isopropanol, wherein the weight percentage of KOH is 5-15 wt% and the volume percentage of isopropanol is 2-8% vol.

4. The method for fabricating the integrated semiconductor nanowire optoelectronic device as described in claim 2, characterized in that, In step S1, after cleaning the silicon substrate, it is placed in the second etching solution for etching for 10-30 minutes, then immersed in concentrated nitric acid and sonicated, then rinsed clean, then immersed in 10% vol HF solution, and finally rinsed clean and dried to obtain the pyramid silicon wafer.

5. The method for fabricating the integrated semiconductor nanowire optoelectronic device as described in claim 1, characterized in that, In step (3), the conductive material is carbon, platinum or tungsten.

6. The method for fabricating the integrated semiconductor nanowire optoelectronic device as described in claim 1, characterized in that, The semiconductor nanowires have a diameter of (50-200) nm and a length of (2-20) μm.

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