Universal porous substrate and manufacturing method thereof

Abstract

The invention discloses a universal porous substrate and a manufacturing method thereof, the universal porous substrate comprises a ceramic substrate, the ceramic substrate comprises a substrate front side and a substrate back side, the substrate front side is provided with a plurality of connecting holes, each connecting hole is connected with a copper bonding pad, isolation gaps are arranged between the copper bonding pads, and the isolation gaps are communicated with the ceramic substrate. The back face of the substrate is provided with a plurality of conducting holes, the conducting holes and the connecting holes are arranged in a staggered mode, each copper bonding pad comprises a welding face exposed in the corresponding conducting hole, and the welding faces of the adjacent copper bonding pads are exposed in the same conducting hole. According to the universal porous substrate provided by the invention, welding on the surface of a copper bonding pad can be avoided, a welding part can be hidden, the welding controllability of a welding area can be improved, the welding stability can be improved, the welding difficulty can be reduced, and a conductive loop can be conveniently and flexibly designed.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a universal porous substrate and a manufacturing method thereof. Background Art

[0002] With the development of semiconductor cooling chips, ceramic copper-clad substrates, as key components, have increasingly higher design requirements. However, most copper-clad substrates are custom-made, with high mold opening costs and poor versatility. In addition, the solder is stacked on the surface of the copper pad, making it difficult to control the soldering results.

[0003] For example, the publication number "CN116864497A" discloses "a semiconductor circuit and its manufacturing method", including a transparent ceramic substrate; a copper foil layer, the copper foil layer is processed to form a circuit wiring layer, and the copper foil layer is pressed on one side of the transparent ceramic substrate; a plurality of circuit components, the circuit components are arranged at specific positions of the circuit wiring layer, wherein the circuit components include a temperature display module, the temperature display module is mounted on the transparent ceramic substrate, and the temperature display module includes a temperature detection circuit, a temperature display control circuit and a temperature protection circuit; a metal pin, the metal pin is used to connect with the circuit wiring layer and extend outward as an input and output; a metal wire; a package, the package is coated on the transparent ceramic substrate, at least the connection part of the metal pin and the circuit wiring layer is sealed, and at least a part of the metal pin extending outward is not sealed and exposed. However, in actual applications, welding needs to be performed on the surface of the copper pad, which results in an uneven welding surface, and reasonable planning is required to avoid subsequent interference, and welding is difficult. Summary of the invention

[0004] In view of the problem that the prior art mentioned in the background technology requires welding on the surface of the copper pad, the present invention provides a universal porous substrate, which can avoid welding on the surface of the copper pad and hide the welding part, thereby improving the welding controllability of the welding area, improving the welding stability, reducing the welding difficulty, and facilitating the flexible design of the conductive circuit.

[0005] To achieve the above objectives, the present invention adopts the following technical solutions.

[0006] A universal porous substrate includes a ceramic substrate, wherein the ceramic substrate includes a substrate front side and a substrate back side, the substrate front side is provided with a plurality of connection holes, each of the connection holes is connected to a copper pad, and an isolation gap is provided between each of the copper pads, and the substrate back side is provided with a plurality of via holes, the via holes and the connection holes are staggered, the copper pads include welding surfaces exposed in the via holes, and the welding surfaces of adjacent copper pads are exposed in the same via hole.

[0007] In the prior art, after the copper pads are connected to the ceramic substrate, since each copper pad is an independent unit, it is necessary to conduct it through welding according to actual needs, which will form welding points or welding bands on the copper pads, thereby affecting the surface balance of the copper pads. At the same time, during the welding process, since there are gaps between the copper pads and each gap is interconnected, the fluidity of the solder cannot be stably controlled during welding, causing the solder to flow along the isolation gaps between the copper pads in a molten state, affecting neatness and being difficult to control the amount of solder used. The method of connecting copper pads with wires in the prior art still has problems affecting neatness and layout, and the connection method with wires will deteriorate the stability of the connection. At the same time, due to the instability of the wires, it will also interfere with subsequent assembly.

[0008] In the present application, the copper pad is connected to the ceramic substrate through a connecting hole to ensure the reliability of the connection, wherein the shape of the copper pad is adapted to the shape of the connecting hole to ensure the stability of the engagement, and a larger area of ​​the copper pad is close to the back side of the substrate to provide a basis for subsequent processing; wherein a plurality of connecting holes are provided, and a copper pad is provided on each connecting hole, and there is no connection relationship between the copper pads, and there is an isolation gap between the copper pads, so that each copper pad is an independent unit; a plurality of via holes are provided on the back side of the substrate, and the via holes are provided at positions offset from the connecting holes, so when processing the via holes, there is no need to The connecting hole will penetrate through, avoiding mutual interference between the conducting hole and the connecting hole, wherein the area of ​​the conducting hole can cover two adjacent copper pads, that is, after the conducting hole is processed, there is a part located in the conducting hole in the two adjacent copper pads, and the part is a welding surface, so the inner wall of the conducting hole constitutes a welding surface including the ceramic substrate and the two adjacent copper pads, so after welding in the conducting hole, the two adjacent copper pads can be directly connected to each other, thereby realizing conductive connection; further, since the conducting hole and the connecting hole are staggered, the adjacent surface of each welding pad is provided with a conducting hole, so that each Each welding pad can be connected to adjacent welding pads in all directions through the conducting hole; due to the hole structure of the conducting hole, welding material can be placed in the conducting hole, and the welding material can be evenly flowed and spread over the conducting hole by heating, and then connected with the welding parts on both sides, so as to achieve the conduction effect. Due to the limitation of the structure of the conducting hole itself, the flow range of the welding material is restricted when it is heated and melted, which ensures the uniform coverage of the welding material during welding. Therefore, the amount of welding material can be reasonably controlled when placing the welding material, avoiding the problem of excessive welding material and controlling the production cost; further, due to the limitation of the welding material The material can only flow inside the via hole, so the difficulty of welding between adjacent copper pads is reduced. It is only necessary to place solder in the via hole and heat it to complete the connection between adjacent copper pads, thereby ensuring the quickness and stability of welding. At the same time, since the welding is carried out inside the via hole, the subsequently formed solder is also formed only inside the via hole. Since the via hole is arranged on the reverse side of the substrate, the surface flatness of the entire device is ensured, and the formation of welding points on the copper pads or the use of wires for connection is avoided, thereby avoiding interference with the welding of semiconductor particles, making full use of space, and reducing the additional space occupied by welding.

[0009] Preferably, the copper pad includes an embedded portion configured to be engaged with the connection hole, and the copper pad includes an external portion configured on the side of the embedded portion away from the back surface of the substrate, and the external portion is attached to the front surface of the substrate. In the present application, the copper pad is configured to include an embedded portion that can be engaged with the connection hole and an external portion that is disposed on the embedded portion and attached to the true surface of the substrate, wherein the structure of the embedded portion and the external portion can ensure the connection stability between the copper pad and the ceramic substrate.

[0010] Preferably, the embedded part is provided with a welding hole on the side away from the back surface of the substrate, and the external part is provided with a placement groove connected to the welding hole, and semiconductor particles are placed in the placement groove. By providing the welding hole and the placement groove, the semiconductor crystal can be relatively fixed on the copper pad, and the solder is filled in the welding hole. The semiconductor particles are relatively fixed and constrained by the pre-connection between the placement groove and the semiconductor particles, and the connection stability of the semiconductor particles is ensured by the solder in the welding hole.

[0011] Preferably, the inner surface of the welding hole and the placement groove is provided with an isolation layer. By providing the isolation layer in the welding hole and the placement groove, the copper pad can be protected from being affected during the welding process, wherein the isolation layer is generally a nickel-plated layer.

[0012] Preferably, an auxiliary coating is arranged on the isolation layer. The auxiliary coating is arranged on the isolation layer, so as to improve the welding quality, and the material of the auxiliary coating can be adapted according to the actual welding material.

[0013] Preferably, the connection hole and the via hole are both circular structures. The via hole and the connection hole are both arranged as circular structures, so that a local staggered position can be generated between the via hole and the connection hole. Since the copper pad is arranged inside the connection hole, the local staggered position of the connection hole and the via hole is the exposed position of the copper pad. Since the connection hole and the via hole are both circular structures, the position of the copper pad can be exposed by a local staggered overlap between the two, thereby avoiding the need to open a larger hole in the via hole, thereby reducing the damage to the structural strength of the ceramic substrate caused by the opening of the via hole and improving stability.

[0014] 7. A welding hole is provided in the copper pad, and the side wall of the via hole is located between the side wall of the connection hole and the side wall of the welding hole. A welding hole is provided in the copper pad, wherein the welding hole needs to be connected to the semiconductor particles by welding, so the side wall of the via hole is provided between the welding hole and the connection hole, so that the via hole can expose part of the copper pad without interfering with the welding hole, thereby ensuring that the via hole is isolated from the solder in the welding hole.

[0015] Preferably, the via hole only connects the welding surfaces of two adjacent copper pads. The via hole connects the welding surfaces of two adjacent copper pads, so that after solder is set in the via hole for welding, only the two adjacent copper pads are connected together, which is convenient for circuit design, and the flexibility of design is ensured by only connecting two by two, and the conduction of the entire circuit is achieved by connecting two by two, which can meet the conduction effect of various lines.

[0016] A method for manufacturing a universal porous substrate comprises the following steps: S1. Processing a plurality of connection holes on the front side of the ceramic substrate, and connecting a copper pad to each connection hole; S2, processing a placement unit for connecting a semiconductor crystal on a copper pad; S3, processing a via hole on the reverse side of the substrate, wherein the processing area of ​​the via hole covers part of the adjacent copper pad; S4. The welding surfaces of adjacent copper pads are exposed on the same via hole, solder is placed in the via hole and heated, and the solder connects and conducts the adjacent copper pads.

[0017] The present application discloses a manufacturing method, firstly, a ceramic substrate and a copper pad are connected, wherein the specific connection method is to set a plurality of connection holes on the front side of the ceramic substrate, and connect to the copper pad through the connection holes. Since the copper pad needs to be connected to the connection hole, the shape of the copper pad is adapted to the shape of the connection hole, that is, the shape of the copper pad and the shape of the connection hole are both cylindrical structures, and then a placement unit for semiconductor particles is processed on the copper pad, and the placement unit is the position where the semiconductor particles need to be placed later, and the above processing is all performed on the front side of the ceramic substrate; then, the back side of the ceramic substrate needs to be processed, and a via hole is processed on the back side, and the setting position of the via hole and the setting position of the connection hole are offset; and since the setting position of the via hole is offset relative to the connection hole, and the connection position between the connection hole and the copper pad is adapted, that is, the setting position of the via hole The embedded portion of the copper pad is also staggered, so that during the processing, when the processing size of the via hole is enlarged, the position of the connecting hole will be cut. At the same time, since the position of the connecting hole is cut, the embedded portion of the copper pad is also partially cut during the processing; thereby, there is a partially exposed portion of the copper pad in the via hole, which is the welding surface, wherein the welding surface of the copper pad in the present application includes the bottom surface and the side surface; subsequently, solder is placed in the via hole and processed, so that the solder can flow and flatten evenly in the via hole when heated, so that the solder can contact the welding surfaces of the two copper pads in the via hole, thereby completing the circuit conduction of the two copper pads.

[0018] In the present application, since the solder is welded in the via hole, the amount of solder placed can be reasonably controlled, and the same amount of solder can be placed in the via hole that needs to be welded, so as to achieve uniform welding. Moreover, since a via hole is provided between each adjacent copper pad, and each welding can only connect two adjacent copper pads, the welding flexibility is higher and the versatility is higher. For circuit designs of different specifications, it is possible to complete the circuit redesign by only designing the corresponding copper pads that need to be connected without re-opening the mold. Moreover, since the solder is placed in the ceramic In the via hole of the ceramic substrate, the fluidity of the solder is limited by the shape of the via hole during the welding process, that is, when the solder in the via hole is flattened, the structure of the solder is a round pancake structure, which makes the welding surface more beautiful and prevents the solder from overflowing from the via hole. The solder only exists in the via hole, and the via hole is an internal drilling hole on the ceramic substrate. Therefore, the presence of the solder does not increase the occupied space of the entire substrate. At the same time, the presence of the solder can be further reduced. The loss of the ceramic substrate structure caused by the opening of the via hole can alleviate the reduction in the structural strength of the ceramic substrate. At the same time, since the setting position of the via hole is set on the basic reverse side, the solder in the ceramic hole will not affect the copper soldering plate on the front side of the substrate and the semiconductor particles connected to the copper soldering plate when welding. Similarly, the welding of the semiconductor particles on the front side of the substrate will not affect the stability of the solder in the via hole on the reverse side of the substrate, ensuring the mutual isolation between the basic front side and the basic reverse side.

[0019] Preferably, in step S4, the height of the solder in the via hole after forming is less than or equal to the height of the welding surface in the via hole. By controlling the amount of solder placed, it is ensured that the solder will not be higher than the back surface of the ceramic substrate after forming, thereby avoiding affecting the insulation and stable support of the overtime substrate. Preferably, the height of the solder after forming is set to be less than or equal to the height of the welding chain, so as to ensure the reasonable use of solder.

[0020] The beneficial effects of the present invention are as follows: (1) It can avoid welding on the surface of the copper pad and hide the welding part, which can improve the controllability of welding in the welding area, improve the stability of welding, reduce the difficulty of welding, and facilitate the flexible design of the conductive circuit; (2) The via hole is set on the substantially reverse side, which will not affect the copper soldering plate on the front side of the substrate and the semiconductor particles connected to the copper soldering plate, thereby ensuring the mutual isolation between the substantially reverse side and the substantially reverse side; (3) The via hole is an internal drilled hole on the ceramic substrate, so the presence of solder does not increase the space occupied by the entire substrate, and the presence of solder can be further reduced; (4) The fluidity of the solder is limited by the shape of the via hole, that is, when the solder in the via hole is flattened, the structure of the solder is a round pancake structure, which makes the welding surface more beautiful and prevents the solder from overflowing from the via hole; (5) Since the solder is welded in the via hole, the amount of solder placed can be reasonably controlled, and the same amount of solder can be placed in the via hole that needs to be welded to achieve uniform welding. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a first exploded schematic diagram of the present invention.

[0022] Figure 2 It is a second exploded schematic diagram of the present invention.

[0023] Figure 3 It is a schematic diagram of the process of the present invention.

[0024] Figure 4 It is a bottom view of the present invention.

[0025] Figure 5 It is a partial axonometric view of the present invention.

[0026] Figure 6 It is a first molding schematic diagram of the present invention.

[0027] Figure 7 It is a second molding schematic diagram of the present invention.

[0028] In the figure: 1 ceramic substrate, 11 substrate front side, 111 connection hole, 12 substrate back side, 121 conduction hole; 2 copper pad, 21 isolation gap, 22 welding surface, 23 embedded part, 231 welding hole, 24 external part, 241 placement groove, 25 isolation layer, 26 auxiliary plating layer. DETAILED DESCRIPTION

[0029] The present invention is further described below in conjunction with the accompanying drawings and specific embodiments.

[0030] Embodiment 1: like Figure 1 , 2 As shown in , 3, a universal porous substrate includes a ceramic substrate 1, the ceramic substrate 1 includes a substrate front side 11 and a substrate back side 12, the substrate front side 11 is provided with a plurality of connecting holes 111, each connecting hole 111 is connected to a copper pad 2, and an isolation gap 21 is provided between each copper pad 2, the substrate back side 12 is provided with a plurality of via holes 121, the via holes 121 and the connecting holes 111 are staggered, the copper pad 2 includes a welding surface 22 exposed in the via hole 121, and the welding surfaces 22 of adjacent copper pads 2 are exposed in the same via hole 121.

[0031] In the prior art, after the copper pad 2 is connected to the ceramic substrate, since each copper pad 2 is an independent unit, it is necessary to conduct it through welding according to actual needs, which will form welding points or welding bands on the copper pad 2, thereby affecting the surface balance of the copper pad 2. At the same time, during the welding process, since there are gaps between the copper pads 2 and each gap is interconnected, the fluidity of the solder cannot be stably controlled during welding, causing the solder to flow along the isolation gaps 21 between the copper pads 2 in a molten state, affecting neatness and being difficult to control the amount of solder used. The prior art uses a method of connecting the copper pads 2 with wires, which still has problems affecting neatness and layout, and the connection method using wires will deteriorate the stability of the connection. At the same time, due to the instability of the wires, it will also interfere with subsequent assembly.

[0032] In the present application, the copper pad 2 is connected to the ceramic substrate 1 through the connecting hole 111 to ensure the reliability of the connection, wherein the shape of the copper pad 2 is adapted to the shape of the connecting hole 111 to ensure the stability of the engagement, and a large area of ​​the copper pad 2 is close to the back surface 12 of the substrate, providing a basis for subsequent processing; wherein a plurality of connecting holes 111 are provided, and a copper pad 2 is provided on each connecting hole 111, and there is no connection relationship between the copper pads 2, and there is an isolation gap 21 between the copper pads 2, so that each copper pad 2 is an independent unit; a plurality of via holes 121 are provided on the back surface 12 of the substrate, and the setting position of the via hole 121 is staggered with the connection hole 111, so when adding When the via hole 121 is processed, the connection hole 111 will not be penetrated, thereby avoiding mutual interference between the via hole 121 and the connection hole 111, wherein the area of ​​the via hole 121 can cover two adjacent copper pads 2, that is, after the via hole 121 is processed, there is a portion located in the via hole 121 in the two adjacent copper pads 2, and the portion is the welding surface 22, so the inner wall of the via hole 121 constitutes a welding surface 22 including the ceramic substrate 1 and the two adjacent copper pads 2, so after welding in the via hole 121, the two adjacent copper pads 2 can be directly connected to each other, thereby realizing conductive connection; further, since the via hole 121 and the connection hole 111 are staggered, each Adjacent surfaces of the welding pads are provided with conducting holes 121, so that each welding pad can be connected to adjacent welding pads in each direction through the conducting holes 121; due to the hole-shaped structure of the conducting holes 121, welding material can be placed in the conducting holes 121, and the welding material is evenly flowed and spread over the conducting holes 121 by heating, and then connected with the welding parts on both sides, so as to achieve a conduction effect. Due to the limitation of the structure of the conducting holes 121 itself, the flow range of the welding material is restricted when it is heated and melted, thereby ensuring uniform coverage of the welding material during welding. Therefore, the amount of welding material can be reasonably controlled when placing the welding material, avoiding the problem of excessive welding material and controlling production costs. ; Further, since the welding material can only flow inside the via hole 121, the difficulty of welding between adjacent copper pads 2 is reduced, and the connection between adjacent copper pads 2 can be completed by only placing solder in the via hole 121 and heating it, thereby ensuring the speed and stability of welding; at the same time, since the welding is performed inside the via hole 121, the subsequently formed solder is also only formed inside the via hole 121. Since the via hole 121 is arranged on the back side of the substrate, the surface flatness of the entire device is ensured, avoiding the formation of welding points on the copper pads 2 or the use of wires for connection, avoiding interference with the welding of semiconductor particles, making full use of space, and reducing the additional space occupied by welding.

[0033] like Figure 2 , 3As shown, the copper pad 2 includes an embedded portion 23 configured to be embedded with the connection hole 111, and the copper pad 2 includes an external portion 24 disposed on the side of the embedded portion 23 away from the back surface 12 of the substrate, and the external portion 24 is attached to the front surface 11 of the substrate. In the present application, the copper pad 2 is configured to include an embedded portion 23 that can be embedded with the connection hole 111 and an external portion 24 disposed on the embedded portion 23 and attached to the true surface of the substrate, wherein the structure of the embedded portion 23 and the external portion 24 can ensure the connection stability between the copper pad 2 and the ceramic substrate 1.

[0034] like Figure 3 As shown, the embedded part 23 is provided with a welding hole 231 on the side away from the back surface 12 of the substrate, and the external connection part 24 is provided with a placement groove 241 connected to the welding hole 231, and semiconductor particles are placed in the placement groove 241. By providing the welding hole 231 and the placement groove 241, the semiconductor crystal can be relatively fixed on the copper pad 2, and the solder is filled in the welding hole 231. The semiconductor particles are relatively fixed and constrained by the pre-connection between the placement groove 241 and the semiconductor particles, and the connection stability of the semiconductor particles is ensured by the solder in the welding hole 231.

[0035] like Figure 3 As shown, the inner surface of the welding hole 231 and the placement groove 241 is provided with an isolation layer 25. By providing the isolation layer 25 in the welding hole 231 and the placement groove 241, the copper pad 2 can be protected from being affected during the welding process, wherein the isolation layer 25 is generally a nickel-plated layer.

[0036] like Figure 3 As shown, an auxiliary coating 26 is disposed on the isolation layer 25. The auxiliary coating 26 is disposed on the isolation layer 25, so that the quality of welding can be improved, and the material of the auxiliary coating 26 can be adapted according to the actual welding material.

[0037] like Figure 1 , 2 As shown in Figures 4 and 5, the connection hole 111 and the via hole 121 are both circular structures. The via hole 121 and the connection hole 111 are both set to circular structures, so that a local staggered position can be generated between the via hole 121 and the connection hole 111. Since the copper pad 2 is set inside the connection hole 111, the local staggered position of the connection hole 111 and the via hole 121 is the exposed position of the copper pad 2. Since the connection hole 111 and the via hole 121 are both circular structures, the position of the copper pad 2 can be exposed by the local staggered overlap between the two, thereby avoiding the need to open a larger hole in the via hole 121, thereby reducing the damage to the structural strength of the ceramic substrate 1 caused by the opening of the via hole 121 and improving the stability.

[0038] like Figure 5As shown, a welding hole 231 is provided in the copper pad 2, and the side wall of the via hole 121 is located between the side wall of the connection hole 111 and the side wall of the welding hole 231. The welding hole 231 is provided in the copper pad 2, wherein the welding hole 231 needs to be connected to the semiconductor particles by welding, so the side wall position of the via hole 121 is set between the welding hole 231 and the connection hole 111, so that the via hole 121 can expose part of the copper pad 2, and will not interfere with the welding hole 231, thereby ensuring that the via hole 121 is isolated from the solder in the welding hole 231.

[0039] like Figure 4 , 5 As shown, the via 121 only connects the welding surfaces 22 of two adjacent copper pads 2. The via 121 connects the welding surfaces 22 of two adjacent copper pads 2, so that only the two adjacent copper pads 2 are connected together after solder is set in the via 121 for welding, which facilitates the design of the circuit, ensures the flexibility of the design by only connecting two by two, and realizes the conduction of the entire circuit by connecting two by two, which can meet the conduction effect of various lines.

[0040] In this embodiment, the above structure can achieve the following beneficial effects: it can avoid welding on the surface of the copper pad 2, hide the welding part, improve the controllability of welding in the welding area, improve the stability of welding, reduce the difficulty of welding, and facilitate the flexible design of the conductive circuit; the setting position of the through hole 121 is set on the basic reverse side, which will not affect the copper soldering plate on the front side 11 of the substrate and the semiconductor particles connected to the copper soldering plate, and ensure the mutual isolation between the basic front side and the basic reverse side; the through hole 121 is an inner drilled hole on the ceramic substrate 1, Therefore, the presence of solder does not increase the occupied space of the entire substrate, and the presence of solder can be further reduced; the fluidity of the solder is limited by the shape of the via 121, that is, when the solder in the via is completely flattened, the structure of the solder is a round pancake structure, which makes the welding surface 22 more beautiful and prevents the solder from overflowing from the via 121; since the solder is welded in the via 121, the amount of solder placed can be reasonably controlled, and the same amount of solder can be placed in the via 121 that needs to be welded to achieve uniform welding.

[0041] Embodiment 2: This embodiment discloses a method for manufacturing a universal porous substrate, which includes the following steps: S1, processing a plurality of connection holes 111 on the front surface 11 of the ceramic substrate 1, and connecting a copper pad 2 to each connection hole 111; S2, processing a placement unit for connecting a semiconductor crystal on the copper pad 2; S3, processing a via hole 121 on the back surface 12 of the substrate, wherein the processing area of ​​the via hole 121 covers a portion of the adjacent copper pad 2; S4. The welding surfaces 22 of the adjacent copper pads 2 are exposed on the same via hole 121. Solder is placed in the via hole 121 and heated. The solder connects and conducts the adjacent copper pads 2.

[0042] In step S4 , the height of the solder in the via hole 121 after forming is less than or equal to the height of the soldering surface 22 in the via hole 121 .

[0043] like Figure 6 , 7 As shown, in this embodiment, the arrangement of the circuit can be changed by changing the position where the solder is placed. The area with a solid color block inside the intermediate via 121 is where the solder is placed, and the right side is a schematic diagram of the circuit being turned on.

[0044] The general porous substrate manufactured by the manufacturing method in this embodiment includes a ceramic substrate 1, the ceramic substrate 1 includes a substrate front surface 11 and a substrate back surface 12, the substrate front surface 11 is provided with a plurality of connection holes 111, each connection hole 111 is connected to a copper pad 2, and an isolation gap 21 is provided between each copper pad 2, the substrate back surface 12 is provided with a plurality of via holes 121, the via holes 121 are staggered with the connection holes 111, the copper pad 2 includes a welding surface 22 exposed in the via hole 121, and the welding surfaces 22 of adjacent copper pads 2 are exposed in the same via hole 121. The copper pad 2 includes an embedded portion 23 that is embedded with the connection hole 111, and the copper pad 2 includes an external connection portion 24 that is arranged on the side of the embedded portion 23 away from the substrate back surface 12, and the external connection portion 24 is attached to the substrate front surface 11. The embedded part 23 is provided with a welding hole 231 on the side away from the back surface 12 of the substrate, and the external connection part 24 is provided with a placement groove 241 connected to the welding hole 231, and semiconductor particles are placed in the placement groove 241. An isolation layer 25 is provided on the inner surface of the welding hole 231 and the placement groove 241. An auxiliary plating layer 26 is provided on the isolation layer 25. The connecting hole 111 and the through hole 121 are both circular structures. The copper pad 2 is provided with a welding hole 231, and the side wall of the through hole 121 is located between the side wall of the connecting hole 111 and the side wall of the welding hole 231. The through hole 121 only connects the welding surfaces 22 of two adjacent copper pads 2.

[0045] The present application discloses a manufacturing method, firstly connecting a ceramic substrate 1 and a copper pad 2, wherein a specific connection method is to provide a plurality of connection holes 111 on the front side 11 of the ceramic substrate 1, and connect to the copper pad 2 through the connection holes 111. Since the copper pad 2 needs to be connected to the connecting hole 111, the shape of the copper pad 2 is adapted to the shape of the connecting hole 111, that is, the shape of the copper pad 2 and the shape of the connecting hole 111 are both cylindrical structures, and then a placement unit for semiconductor particles is processed on the copper pad 2, and the placement unit is a position where semiconductor particles need to be placed later, and the above processing is all performed on the side of the substrate front 11 of the ceramic substrate 1; then it is necessary to process the substrate back 12 of the ceramic substrate 1, and process the via hole 121 on the basic back surface, and the setting position of the via hole 121 is offset from the setting position of the connecting hole 111; and since the setting position of the via hole 121 is offset relative to the connecting hole 111, and the connection position between the connecting hole 111 and the copper pad 2 is adapted, that is, the setting position of the via hole 121 is The position of the copper pad 2 is also offset from the position of the embedded portion 23 of the copper pad 2, so that during the processing, when the processing size of the via hole 121 is enlarged, it will cut to the position of the connecting hole 111. At the same time, since the position of the connecting hole 111 is cut, the embedded portion 23 in the copper pad 2 is also partially cut during the processing; thereby, there is a partially exposed portion of the copper pad 2 in the via hole 121, which is the welding surface 22, wherein the welding surface 22 of the copper pad 2 in the present application includes a bottom surface and a side surface; subsequently, solder is placed in the via hole 121 and processed, so that the solder can flow and flatten evenly in the via hole 121 when heated, so that the solder can contact the welding surfaces 22 of the two copper pads 2 in the via hole 121, thereby completing the circuit conduction of the two copper pads 2.

[0046] In the present application, since the solder is welded in the via hole 121, the amount of solder placed can be reasonably controlled, and the same amount of solder can be placed in the via hole 121 that needs to be welded, so as to achieve uniform welding. Moreover, since a via hole 121 is provided between each adjacent copper pad 2, and each welding can only connect two adjacent copper pads 2, the welding flexibility is higher and the versatility is higher. For circuit designs of different specifications, it is possible to design the circuit again without re-opening the mold, and only by designing the corresponding copper pads 2 that need to be connected; and since the solder is placed on the via holes 121 of the ceramic substrate 1, the circuit can be re-designed. In the through hole 121, the fluidity of the solder is limited by the shape of the through hole 121 during the welding process, that is, when the solder in the through hole is completely flattened, the structure of the solder is a round pancake structure, which makes the welding surface 22 more beautiful and prevents the solder from overflowing from the through hole 121. The solder only exists in the through hole 121, and the through hole 121 is an inner drilling hole on the ceramic substrate 1, so the presence of the solder does not increase the occupied space of the entire substrate, and the presence of the solder can be further reduced. The loss of the ceramic substrate 1 structure caused by the opening of the through hole 121 can alleviate the reduction in the structural strength of the ceramic substrate 1. At the same time, since the setting position of the through hole 121 is set on the basic reverse side, the solder in the ceramic hole will not affect the copper soldering plate on the front side 11 of the substrate and the semiconductor particles connected to the copper soldering plate when welding. Similarly, the welding of the semiconductor particles on the front side 11 of the substrate will not affect the stability of the solder in the through hole 121 on the reverse side 12 of the substrate, thereby ensuring the mutual isolation between the basic front side and the basic reverse side.

[0047] By controlling the amount of solder placed, it is ensured that the solder will not be higher than the substrate back surface 12 of the ceramic substrate 1 after forming, so as to avoid affecting the insulation and stable support of the overtime substrate. Preferably, the height of the solder after forming is set to be less than or equal to the height of the welding chain, so as to ensure the reasonable use of solder.

[0048] In the present application, the copper pad 2 is connected to the ceramic substrate 1 through the connecting hole 111 to ensure the reliability of the connection. The shape of the copper pad 2 is adapted to the shape of the connecting hole 111 to ensure the stability of the engagement. There are a plurality of connecting holes 111, and there is no connection relationship between the copper pads 2. There is an isolation gap 21 between the copper pads 2, so that each copper pad 2 is an independent unit. A plurality of via holes 121 are set on the reverse side 12 of the substrate, and the setting position of the via hole 121 is staggered with the connection hole 111, wherein The area of ​​the via hole 121 can cover two adjacent copper pads 2. There is a portion located in the via hole 121 in the two adjacent copper pads 2, and the portion is the welding surface 22. Therefore, after welding in the via hole 121, the two adjacent copper pads 2 can be directly connected to each other, thereby achieving conductive connection; wherein, due to the hole structure of the via hole 121, welding material can be placed in the via hole 121, and the welding material can be evenly flowed and spread over the via hole 121 by heating, and then connected with the welding surfaces on both sides. The conductive hole 121 is limited in structure by the flow range of the welding material when it is heated and melted, thereby ensuring uniform coverage of the welding material during welding. Therefore, the amount of welding material can be reasonably controlled when placing the welding material, thereby avoiding the problem of excessive welding material and controlling production costs. Furthermore, since the welding material can only flow inside the conductive hole 121, the welding difficulty between adjacent copper pads 2 is reduced. It is only necessary to place solder in the conductive hole 121 for heating to complete the connection between adjacent copper pads 2, thereby ensuring the speed and stability of welding. At the same time, since the welding is performed inside the conductive hole 121, the subsequently formed solder is also formed only inside the conductive hole 121. Since the conductive hole 121 is arranged on the reverse side of the substrate, the surface flatness of the entire device is ensured, and the formation of welding points on the copper pads 2 or the use of wires for connection is avoided, thereby avoiding interference with the welding of semiconductor particles, making full use of space, and reducing the additional space occupied by welding.

[0049] The copper pad 2 is configured as an embedded portion 23 that can be embedded in the connection hole 111 and an external portion 24 that is arranged on the embedded portion 23 and is in contact with the substrate surface, wherein the structure of the embedded portion 23 and the external portion 24 can ensure the connection stability between the copper pad 2 and the ceramic substrate 1.

[0050] By setting the welding hole 231 and the placement groove 241, the semiconductor crystal can be relatively fixed on the copper pad 2, and the solder is filled in the welding hole 231. The semiconductor particles are relatively fixed and constrained by the pre-connection between the placement groove 241 and the semiconductor particles, and the connection stability of the semiconductor particles is ensured by the solder in the welding hole 231.

[0051] By arranging the isolation layer 25 in the welding hole 231 and the placement groove 241, the copper pad 2 can be protected from being affected during the welding process, wherein the isolation layer 25 is generally a nickel-plated layer.

[0052] An auxiliary coating layer 26 is provided on the isolation layer 25, so as to improve the quality of welding. The material of the auxiliary coating layer 26 can be adapted according to the actual welding material.

[0053] The via hole 121 and the connection hole 111 are both arranged in a circular structure, so that a partially staggered position can be generated between the via hole 121 and the connection hole 111. Since the copper pad 2 is arranged inside the connection hole 111, the locally staggered position of the connection hole 111 and the via hole 121 is the exposed position of the copper pad 2. Since the connection hole 111 and the via hole 121 are both circular structures, the position of the copper pad 2 can be exposed by partially staggering and overlapping between the two, thereby avoiding the need to open a larger hole in the via hole 121, thereby reducing the damage to the structural strength of the ceramic substrate 1 caused by the opening of the via hole 121 and improving the stability.

[0054] A welding hole 231 is set in the copper pad 2, wherein the welding hole 231 needs to be welded to the semiconductor particles, so the side wall position of the via hole 121 is set between the welding hole 231 and the connecting hole 111, so that the via hole 121 can expose a portion of the copper pad 2 without interfering with the welding hole 231, thereby ensuring that the via hole 121 is isolated from the solder in the welding hole 231.

[0055] The via hole 121 connects the welding surfaces 22 of two adjacent copper pads 2, so that after solder is set in the via hole 121 for welding, only the two adjacent copper pads 2 are connected together, which is convenient for circuit design. The flexibility of design is guaranteed by only connecting two by two, and the conduction of the entire circuit is achieved by connecting two by two, which can meet the conduction effect of various lines.

Claims

1. A general porous substrate, characterized in that: The invention comprises a ceramic substrate (1), wherein the ceramic substrate (1) comprises a substrate front surface (11) and a substrate back surface (12), wherein the substrate front surface (11) is provided with a plurality of connection holes (111), each of the connection holes (111) is connected to a copper pad (2), and an isolation gap (21) is provided between each of the copper pads (2); wherein the substrate back surface (12) is provided with a plurality of via holes (121), wherein the via holes (121) and the connection holes (111) are arranged in a staggered manner, and the copper pads (2) comprise welding surfaces (22) exposed in the via holes (121), and the welding surfaces (22) of adjacent copper pads (2) are exposed in the same via hole (121).

2. A universal porous substrate according to claim 1, characterized in that: The copper pad (2) includes an embedded portion (23) arranged to be embedded in the connection hole (111), and the copper pad (2) includes an external connection portion (24) arranged on a side of the embedded portion (23) away from the back surface (12) of the substrate, and the external connection portion (24) is attached to the front surface (11) of the substrate.

3. A universal porous substrate according to claim 2, characterized in that: The embedded portion (23) is provided with a welding hole (231) on a side away from the back surface (12) of the substrate, and the external connection portion (24) is provided with a placement groove (241) connected to the welding hole (231), and semiconductor particles are placed in the placement groove (241).

4. A universal porous substrate according to claim 3, characterized in that: An isolation layer (25) is provided on the inner surfaces of the welding hole (231) and the placement groove (241).

5. A universal porous substrate according to claim 4, characterized in that: An auxiliary plating layer (26) is provided on the isolation layer (25).

6. A universal porous substrate according to any one of claims 1 to 5, characterized in that: The connection hole (111) and the conducting hole (121) are both circular structures.

7. A universal porous substrate according to any one of claims 1 to 5, characterized in that: A welding hole (231) is provided in the copper pad (2), and a side wall of the conducting hole (121) is located between a side wall of the connecting hole (111) and a side wall of the welding hole (231).

8. A universal porous substrate according to any one of claims 1 to 5, characterized in that: The via hole (121) only connects the welding surfaces (22) of two adjacent copper pads (2).

9. A method for manufacturing a universal porous substrate, used for manufacturing a universal porous substrate as claimed in any one of claims 1 to 8, characterized in that: The following steps are included: S1, processing a plurality of connection holes (111) on the front side (11) of the ceramic substrate (1), and connecting a copper pad (2) to each connection hole (111); S2, processing a placement unit for connecting a semiconductor crystal on the copper pad (2); S3, processing a via hole (121) on the back surface (12) of the substrate, wherein the processing area of ​​the via hole (121) covers a portion of the adjacent copper pad (2); S4. The welding surfaces (22) of the adjacent copper pads (2) are exposed on the same conducting hole (121), solder is placed in the conducting hole (121) and heated, and the solder connects and conducts the adjacent copper pads (2).

10. The method for manufacturing a universal porous substrate according to claim 1, characterized in that: In step S4, after the solder is formed, the height of the solder inside the conducting hole (121) is less than or equal to the height of the soldering surface (22) inside the conducting hole (121).

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