Semiconductor device manufacturing method and semiconductor device

Abstract

The manufacturing method of the semiconductor device comprises a conversion step of converting amorphous silicon into monocrystalline silicon. The conversion step includes: a first step of forming a silicide film in contact with the amorphous silicon by forming a first film containing a first material so as to cover the amorphous silicon via a treatment associated with heating; a second step in which, after the first step, a second film containing a second material is formed so as to cover the silicide film via a treatment associated with heating, and a compound comprising Si, the first material, and the second material is formed so as to be in contact with the silicide film; and a third step for converting the silicide film remaining after the second step into the compound by heat treatment, the first material being one material selected from the group consisting of Ni, Pd, Ti, Cu, Pt, Co, Mo, Mg, W, Cr, and Mn, and the second material being one material selected from the group consisting of Al, Au, Sb, In, Ag, and Ga.

Description

Technical Field

[0001] The invention relates to a method for manufacturing a semiconductor device and a semiconductor device. Background Art

[0002] As one of the methods to solve the performance degradation caused by the increase of channel resistance, etc., for semiconductor devices (such as thin film transistors and semiconductor memory devices) is to crystallize the amorphous silicon or polycrystalline silicon in the channel. As a method of crystallization, there is a MILC (Metal Induced LateralCrystallization) process using Ni silicide as the growth end of crystallization. As an example of MILC process, Figures 1 to 3 The “thin film transistor using a metal-induced lateral crystallization method and a method for manufacturing the same” described in Patent Document 1 will be described. Figures 1 to 3 In the figure, reference numeral 200 represents an insulating substrate, 210 represents a buffer layer, 220 represents an active layer, 221 and 225 represent source / drain regions, 223 represents a channel region, 230 represents a gate insulating film, 240 represents a gate electrode, 250 represents an interlayer insulating film, 251 and 255 represent contact holes, and 260 represents a crystallization-inducing metal film.

[0003] like Figure 1 As shown, an interlayer insulating film 250 is deposited on an insulating substrate 200 having a gate electrode 240 to form contact holes 251 and 255 that partially expose source / drain regions 221 and 225. Next, a crystallization inducing metal film 260 made of Ni or the like is deposited on the insulating substrate 200 by sputtering or the like.

[0004] Then, if Figure 2 As shown, the amorphous silicon film of the active layer 220 is crystallized into a polycrystalline silicon film by heat treatment in a furnace (crystallization at 550°C at a rate of 3μm / hr). At this time, the amorphous silicon in the lower regions 221a and 225a under the crystallization inducing metal film 260 in the contact holes 251 and 255 is crystallized by the metal induced crystallization (MIC) method, and the amorphous silicon in the other regions 221b and 225b is crystallized by the MILC method.

[0005] Then, if Figure 3 As shown, by removing the crystallization inducing metal film 260, source / drain electrodes 271 and 275 are formed, thereby obtaining a thin film transistor.

[0006] Patent document 2 discloses a non-volatile semiconductor storage device having a semiconductor substrate, a first layer, a second conductive layer, a storage film, and a semiconductor layer, and having a metal layer containing Ni, Co, Al, or Pd in ​​contact with the conductive layer, in order to improve the operation speeds such as the read speed, the write speed, and the erase speed, and to achieve ease of operation control and circuit layout design. Patent document 2 discloses the following: "When the metal layer 70 is made of a material that does not form silicide, such as Al, after annealing, the semiconductor pillar SP may contain an alloy with Al near the lower end, and the semiconductor pillar SP may contain an alloy with Al near the upper end. Moreover, the semiconductor pillar SP may contain an alloy with Al, not limited to the upper and lower ends of the semiconductor pillar SP."

[0007] Patent document 3 discloses a semiconductor memory device having a first wiring layer, a second wiring layer, and a memory pillar in order to improve processing capability. In addition, in Patent document 3, NiSi2 is suitable for forming single crystal silicon by MILC because its lattice constant is mismatched with that of Si by only about 0.3%. As metal materials for crystallizing semiconductor pillars (e.g., silicon, silicon germanium, germanium) by MILC, for example, Ni, Co, Al, or Pd are disclosed.

[0008] Non-patent document 1 relates to the lattice constant of Si, the lattice constant of NiSi2, and the lattice constant of NiSi 2-X Al X lattice constant. Figure 4 The horizontal axis represents the relative 2-X Al X The ratio X, a represents the lattice constant of Si, Figure 4 The vertical axis represents the lattice constant. Figure 4 It can be seen that the lattice constant of NiSi2 is 5.406, the lattice constant of Si is 5.431, and when the ratio of Al is X=0.24, NiSi2-xAl X =5.431, which is consistent with the lattice constant of Si. However, the unit of the lattice constant in Non-Patent Document 1 is angstrom. In this specification, the unit of the lattice constant is Provide explanation.

[0009] [Prior Technical Literature]

[0010] [Patent Document]

[0011] [Patent Document 1] Japanese Patent Application Publication No. 2005-159307

[0012] [Patent Document 2] Japanese Patent Application Publication No. 2014-175348

[0013] [Patent Document 3] Japanese Patent Application Publication No. 2019-165178

[0014] [Non-patent literature]

[0015] [Non-patent document 1] Klaus et al. "Appl. Phys. Lett. 83, 497 (2003)" P497-499 Summary of the invention

[0016] [Problems to be solved by the invention]

[0017] The present invention provides a technology for converting amorphous silicon into single crystal silicon via a silicide having a lattice constant close to that of single crystal silicon.

[0018] [Methods for solving the problem]

[0019] A first aspect of the present invention comprises a method for manufacturing a semiconductor device including a conversion step for converting amorphous silicon into single crystal silicon, wherein the conversion step comprises: a first step of forming a first film containing a first material in a manner covering the amorphous silicon by a treatment accompanied by heat, thereby forming a silicide film in contact with the amorphous silicon; and a second step of forming a second film containing a second material in a manner covering the silicide film by a treatment accompanied by heating after the first step, thereby forming a compound composed of Si, the first material and the second material in a manner in contact with the silicide film; and a third step of converting the silicide film remaining after the second step into the compound by a heat treatment; the first material is selected from one material of the group consisting of Ni, Pd, Ti, Cu, Pt, Co, Mo, Mg, W, Cr and Mn, and the second material is selected from one material of the group consisting of Al, Au, Sb, In, Ag and Ga.

[0020] A second aspect of the present invention relates to a semiconductor device manufacturing method comprising a conversion step of converting amorphous silicon into single crystal silicon, wherein the conversion step comprises: a first step of forming a first film containing a first material in a manner covering the amorphous silicon; a second step of forming a second film containing a second material in a manner covering the first film after the first step; and a third step of forming a compound containing Si, the first material and the second material by heat treatment after the second step; the first material is selected from one material of the group consisting of Ni, Pd, Ti, Cu, Pt, Co, Mo, Mg, W, Cr and Mn, and the second material is selected from one material of the group consisting of Al, Au, Sb, In, Ag and Ga.

[0021] The third aspect of the present invention relates to a semiconductor device having a stacked structure including amorphous silicon, a compound and single crystal silicon, wherein the compound Si, a first material and a compound of a second material, the first material is selected from a material selected from the group consisting of Ni, Pd, Ti, Cu, Pt, Co, Mo, Mg, W, Cr and Mn, and the second material is selected from a material selected from the group consisting of Al, Au, Sb, In, Ag and Ga. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 Cross-sectional views for explaining the steps of the method for manufacturing a thin film transistor described in Patent Document 1.

[0023] Figure 2 Cross-sectional views for explaining the steps of the method for manufacturing a thin film transistor described in Patent Document 1.

[0024] Figure 3 Cross-sectional views for explaining the steps of the method for manufacturing a thin film transistor described in Patent Document 1.

[0025] Figure 4 The lattice constant of Si, the lattice constant of NiSi2, and the lattice constant of NiSi2 described in Non-Patent Document 1 are shown in FIG. 2-X Al X Graph of the lattice constant.

[0026] Figure 5A A diagram showing steps of a method for manufacturing a semiconductor device according to a first embodiment.

[0027] Figure 5B A diagram showing steps of a method for manufacturing a semiconductor device according to a first embodiment.

[0028] Figure 5C A diagram showing steps of a method for manufacturing a semiconductor device according to a first embodiment.

[0029] Fig. 6A A diagram showing steps of a method for manufacturing a semiconductor device according to a second embodiment.

[0030] Figure 6B A diagram showing steps of a method for manufacturing a semiconductor device according to a second embodiment.

[0031] Figure 6C A diagram showing steps of a method for manufacturing a semiconductor device according to a second embodiment.

[0032] Fig. 7A A flowchart showing a method for manufacturing a semiconductor device according to a third embodiment.

[0033] Figure 7B A flowchart showing a method for manufacturing a semiconductor device according to a third embodiment.

[0034] Figure 7C A flowchart showing a method for manufacturing a semiconductor device according to a third embodiment.

[0035] Fig. 8A A diagram showing steps of a method for manufacturing a semiconductor device according to a first embodiment.

[0036] Figure 8B A diagram showing steps of a method for manufacturing a semiconductor device according to a first embodiment.

[0037] Figure 8C A diagram showing steps of a method for manufacturing a semiconductor device according to a first embodiment.

[0038] Fig. 9 A flowchart showing a method for manufacturing a semiconductor device according to a fourth embodiment.

[0039] Fig.10 A flowchart showing a method for manufacturing a semiconductor device according to a fourth embodiment.

[0040] Fig.11 A flowchart showing a method for manufacturing a semiconductor device according to a fourth embodiment.

[0041] Fig.12 A flowchart showing a method for manufacturing a semiconductor device according to a fourth embodiment.

[0042] Fig.13 A flowchart showing a method for manufacturing a semiconductor device according to a fourth embodiment.

[0043] Fig.14 A flowchart showing a method for manufacturing a semiconductor device according to a fourth embodiment.

[0044] Fig.15 A flowchart showing a method for manufacturing a semiconductor device according to a fourth embodiment.

[0045] Fig.16 A flowchart showing a method for manufacturing a semiconductor device according to a fourth embodiment.

[0046] Fig.17 A flowchart showing a method for manufacturing a semiconductor device according to a fourth embodiment.

[0047] Fig.18A A diagram showing steps of a method for manufacturing a semiconductor device according to a fifth embodiment.

[0048] Fig.18B A diagram showing steps of a method for manufacturing a semiconductor device according to a fifth embodiment. DETAILED DESCRIPTION

[0049] The following embodiments are described in detail with reference to the accompanying drawings. However, the following embodiments do not limit the scope of the present invention. Although multiple features are described in the embodiments, these multiple features are not all necessary for the invention, and multiple features can also be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numbers are marked for the same or similar structures, and repeated descriptions are omitted.

[0050] FIG. 5A to FIG. 5C The first embodiment diagram of the manufacturing method of a semiconductor device including the conversion step of converting amorphous silicon 1 into single crystal silicon 10 is schematically shown. The inventors found from the experimental results of heating a structure obtained by sequentially depositing an Al film and a Ni film on amorphous silicon that the Al film hinders the silicide of the Ni film. In addition, based on the experimental results of heating a structure obtained by depositing a NiAl film on amorphous silicon, the inventors found that Al is not contained in the Ni silicide and Al is squeezed out to the surface side of the NiAl film. In addition, the inventors found that when a Ni film is formed on amorphous silicon by a heating step to form a Ni silicide film in contact with amorphous silicon, and then an Al film is formed on the Ni silicide film by a heating treatment, Al diffuses into the Ni silicide film to form NiAlSi. Since NiAlSi has a lattice constant close to that of single crystal silicon, single crystal silicon can be easily obtained by bringing NiAlSi into contact with amorphous silicon and performing a heat treatment. The following embodiments are based on the above insights.

[0051] The method for manufacturing a semiconductor device according to the first embodiment may include a conversion step of converting amorphous silicon 1 into single crystal silicon 10. The amorphous silicon 1 may constitute a part of a substrate. The conversion step may include:

[0052] A first step S1 of forming a first film 3 containing Ni (nickel) as a first material so as to cover the amorphous silicon 1 by a concomitant heating heat treatment, thereby forming a Ni silicide as a silicide 4 in contact with the amorphous silicon 1;

[0053] After the first step S1, a second film 6 containing Al (aluminum) as the second material is formed in a manner of covering the silicide 4 by a treatment accompanied by heating, thereby forming a second step S2 of NiAlSi as the compound 7 containing Si (silicon), Ni (first material), and Al (second material) in a manner of contacting the silicide 4;

[0054] And a third step S3 of converting the silicide 4 remaining after the second step S2 into a NiAISi film as a compound 9 containing Si, Ni (first material), and Al (second material) through heat treatment.

[0055] Thus, a structure in which NiAlSi as the compound 9 is arranged in contact with the amorphous silicon 1 can be produced.

[0056] Figure 5A , a structure 101 is shown in which a first film 3 containing Ni as a first material is formed to cover the amorphous silicon 1 by heat treatment accompanied by heating in the first step S1, and a structure 102 is shown in which Ni silicide is formed as the silicide 4. Figure 5B In the figure, there is shown a stage structure 104 in which a second film 6 containing Al as a second material is formed in a manner of covering the silicide 4 through a treatment accompanied by heating, and a stage structure 105 in which NiAlSi as a compound 7 containing Si, Ni (first material), and Al (second material) is formed in a manner of being in contact with the silicide 4. Figure 5C , there are shown a structure 106 having the silicide 4 remaining after the second step S2 and a structure 107 after the silicide 4 is converted into the compound 9 through heat treatment.

[0057] Here, as the first material, instead of Ni, Pd (palladium), Ti (titanium), Cu (copper), Pt (platinum), Co (cobalt), Mo (molybdenum), Mg (magnesium), W (tungsten), Cr (chromium) and Mn (manganese) can be used. That is, the first material can be one material selected from the group consisting of Ni, Pd, Ti, Cu, Pt, Co, Mo, Mg, W, Cr and Mn.

[0058] As the second material, Au (gold), Sb (antimony), In (indium), Ag (silver) or Ga (gallium) may be used instead of Al. That is, the second material may be one material selected from the group consisting of Al, Au, Sb, In, Ag and Ga.

[0059] The compound containing Si, the first material, and the second material is preferably, for example, NiAuSi, NiSbSi, NiInSi, NiAgSi, or NiGaSi other than NiAlSi.

[0060] The step of converting the amorphous silicon 1 into the single crystal silicon 10 may further include a fourth step S4 of converting at least a portion of the amorphous silicon 1 remaining after the third step S3 into the single crystal silicon 10 through heat treatment. Figure 5C , a structure 108 is shown after at least a portion of the amorphous silicon 1 remaining after the third step S3 is converted into single crystal silicon 10 through heat treatment. The fourth step may include a MILC (Metal Induced Lateral Crystallization) process.

[0061] In addition to amorphous silicon 1, the substrate in the implementation of the first step may have an insulating film 2 (e.g., SiO2: silicon dioxide). The amorphous silicon 1 and the insulating film 2 may be in contact with each other or disposed close to each other. In the first step S1, through a process accompanied by heating, in addition to the amorphous silicon 1, a first film 3 containing a first material (e.g., Ni) may be formed so as to cover the insulating film 2. Thus, in addition to the silicide 4 in contact with the amorphous silicon 1, a first material film 3' in contact with the insulating film 2 may be formed. Figure 5A In, the structure 102 having the first material film 3' is shown.

[0062] At this time, the conversion step may further include a step of removing the first material film 3' in contact with the insulating film 2 between the first step S1 and the second step S2, such as through chemical etching. Figure 5A In, the structure 103 after removing the first material film 3' is shown. By removing the first material film 3', it is possible to prevent the lateral growth of the silicide 4 and the occurrence of an electrical short circuit due to the silicide 4 meeting with other silicides 4. When removing the first material film 3' in contact with the insulating film 2, in the second step S2, when forming NiAlSi as the compound 7 containing Si, Ni (the first material), and Al (the second material) in contact with the silicide 4, a second material film 8 as a part of the second film 6 remains in the portion covering the insulating film 2. The second material film 8 may be removed after the second step S2 (e.g., between the second step S2 and the third step S3).

[0063] The thickness T2 of the second film 6 formed in the second step S2 (the thickness of the second film 6 in the portion covering the Ni silicide 4) is preferably greater than the thickness T1 of the first film 3 formed in the first step S1 and less than 4 times the thickness T1 of the first film 3 formed in the first step S1. That is, it is preferably satisfied that 0 < T2 < 4T1.

[0064] T2 = 0 corresponds to the value of X as the horizontal axis of Figure 4 being 0. At this time, the lattice constant of NiSi 2-0 Al0 (i.e., NiSi2) is 5.406. T2 = 4T1 corresponds to the value of X as the horizontal axis of Figure 4 being 0.54. When the value of X is 0.54, the lattice constant of NiSi 1.46 Al 0.54 is 5.454.

[0065] When 0 < T2 < 4T1 is satisfied, the lattice constant of NiSi 2-x Al x is shown as follows.

[0066] 5.406 < NiSi 2-x Al xThe lattice constant is less than 5.454

[0067] It can be seen that compared with the lattice constant of NiSi2 (5.406), NiSi 2-x Al x Since the lattice constant of Si is closer to that of Si = 5.430, it is suitable for forming single crystal silicon through the MILC process.

[0068] As a result, channel resistance, which is a problem in semiconductor devices such as thin film transistors and semiconductor memory devices (for example, 3D NAND memories), can be reduced.

[0069] FIG. 6A to FIG. 6C The figure schematically shows a second embodiment of a method for manufacturing a semiconductor device including a step of converting amorphous silicon 1 into single crystal silicon 10. Matters not mentioned in the second embodiment can be based on the first embodiment. Fig. 6A The first step S1 is schematically shown. Figure 6B The second step S2 is schematically shown. Figure 6C The third step S3 and the fourth step S4 are schematically shown.

[0070] In the second embodiment, between the first step S1 and the second step S2, the first material film 3' in contact with the insulating film 2 is not removed. Therefore, in the second step S2, a second film 6 containing Al as the second material is formed in a manner covering the silicide 4 and the first material film 3' through a treatment accompanied by heating, thereby obtaining a second compound 11 of the first material and the second material in a manner in contact with the insulating film 2 in addition to the compound 7 in contact with the silicide 4.

[0071] In the second embodiment, the conversion step may include, between the second step S2 and the third step S3, a step of removing the second compound 11 in contact with the insulating film 2. By removing the second compound 11, it is possible to prevent the silicide 4 from growing laterally and merging with other silicides 4 to cause an electrical short circuit. Figure 6B , the structure 106 in which the second compound 11 is removed is represented.

[0072] FIG. 7A to FIG. 7C A diagram schematically shows a third embodiment of a method for manufacturing a semiconductor device including a step of converting amorphous silicon into single crystal silicon. Matters not described in the third embodiment may be implemented in the first embodiment. Fig. 7A The first step S1 is schematically shown. Figure 7B The second step S2 is schematically shown. Figure 7C The third step S3 and the fourth step S4 are schematically shown.

[0073] In the third embodiment, the first material film 3' in contact with the insulating film 2 is not removed between the first step S1 and the second step S2. Therefore, in the second step S2, the second film 6 containing Al as the second material is formed in a manner covering the silicide 4 and the first material film 3' by a treatment accompanied by heating, thereby obtaining a second compound 11 of the first material and the second material in a manner in contact with the insulating film 2 in addition to the compound 7 in contact with the silicide 4. In the second embodiment, the second compound 11 in contact with the insulating film 2 is not removed between the second step S2 and the third step S3.

[0074] In the third embodiment, the conversion step may include a step of removing the second compound 11 in contact with the insulating film 2 after the third step S3, more specifically, between the third step S3 and the fourth step S4. By removing the second compound 11, it is possible to prevent the silicide 4 from growing laterally and merging with other silicides 4 to cause an electrical short circuit. Figure 7C , the structure 107 in which the second compound 11 is removed is represented.

[0075] In the first to third embodiments, the first film and the second film are shown to be formed on the amorphous silicon 1 in the referenced drawings. However, this is only a diagrammatic representation, showing that the first film and the second film are formed on the amorphous silicon 1. Forming the first film and the second film on the amorphous silicon 1 does not limit the present invention to forming the first film and the second film on the amorphous silicon 1 in the film forming device. Forming the first film and the second film on the amorphous silicon 1 also includes, for example, Figure 8A to Figure 8C As shown, a first film and a second film are formed below the amorphous silicon 1 in a film forming apparatus.

[0076] Next, refer to Figures 9 to 17 , a fourth embodiment of a method for manufacturing a semiconductor device is described. The fourth embodiment provides a method for manufacturing a semiconductor memory device as an example of a semiconductor device. Here, an example of manufacturing a semiconductor memory device having a NAND string is described. The NAND string includes a plurality of thin film transistors connected in series.

[0077] Figures 9 to 17 In the figure, reference numeral 100 denotes a semiconductor substrate; 111, 114, 116, 136 denote insulating films; 112, 113 denote wiring layers; 115 denotes a gate electrode layer; 119 denotes a tunnel insulating film; 120 denotes a charge storage layer; 121 denotes a blocking insulating film; 135 denotes amorphous silicon; 123 denotes a core layer; 124A, 124B, 141 denote silicide layers; 125 denotes a cap layer; and 136 denotes a conductive layer. Reference symbol GP denotes a gap; MP denotes a storage pin; and SLT denotes a slit.

[0078] exist Fig. 9In the state shown, the gap GP is connected to the external space through the slit SLT. In addition, the amorphous silicon 135 corresponds to the amorphous silicon 1 described above and is to be crystallized. The amorphous silicon 135 is exposed relative to the gap GP. Fig.10 , Fig.11 In the first step shown, a first film 3 containing Ni as a first material is formed to cover the amorphous silicon 135 through a heat treatment accompanied by heating, thereby forming Ni silicide as silicide 4 in contact with the amorphous silicon 135. At this time, in addition to the silicide 4 in contact with the amorphous silicon 135, a first material film 3' in contact with the insulating film can be formed. The first material film 3' can be removed later.

[0079] Then, in Fig.12 , Fig.13 In the second step shown, a second film 6 containing Al as the second material is formed by a treatment accompanied by heating so as to cover the silicide 4, and NiAlSi as a compound 7 containing Si, Ni (first material), and Al (second material) is formed so as to be in contact with the silicide 4. At this time, a second material film 8 as a part of the second film 6 remains in the portion covering the insulating film 136 and the like.

[0080] Then, in Fig.14 In any step shown in FIG. 1 , the second material film 8 on the insulating film is removed. Fig.15 In the third step shown, the silicide film 4 remaining after the second step is converted into a NiAlSi film as a compound 9 containing Si, Ni (first material), and Al (second material) through heat treatment.

[0081] Then, in Fig.16 , Fig.17 In the fourth step shown, at least a portion of the amorphous silicon 135 remaining after the third step is converted into single crystal silicon 10 through heat treatment.

[0082] The fourth embodiment is advantageous in reducing channel resistance which is a problem of semiconductor memory devices (eg, 3D NAND memory).

[0083] Fig.18A , Fig.18B A diagram schematically shows a fifth embodiment of a method for manufacturing a semiconductor device including a step of converting amorphous silicon into single crystal silicon. Matters not mentioned in the fifth embodiment can be based on the first to third embodiments. In addition, the fifth embodiment can be applied to the fourth embodiment.

[0084] A fifth embodiment of the method for manufacturing a semiconductor device may include a conversion step of converting amorphous silicon 1 into single crystal silicon 10. Amorphous silicon 1 may constitute a part of a substrate. The conversion step includes: a first step S1' of forming a first film 3 containing Ni as a first material in a manner covering the amorphous silicon 1; and a second step S2' of forming a second film 6 containing Al as a second material in a manner covering the first film 3 after the first step S1'; and a third step S3' of converting the first film and the second film into a NiAlSi film containing a compound 9 of Si, Ni (first material), and Al (second material) through heat treatment after the second step S2'.

[0085] Thus, a structure in which NiAISi as the compound 9 is arranged in contact with the amorphous silicon 1 can be produced.

[0086] Here, as the first material, instead of Ni, Pd (palladium), Ti (titanium), Cu (copper), Pt (platinum), Co (cobalt), Mo (molybdenum), Mg (magnesium), W (tungsten), Cr (chromium) and Mn (manganese) can be used. That is, the first material is one material selected from the group consisting of Ni, Pd, Ti, Cu, Pt, Co, Mo, Mg, W, Cr and Mn.

[0087] As the second material, Au (gold), Sb (antimony), In (indium), Ag (silver) or Ga (gallium) can be used instead of Al. That is, the second material is one material selected from the group consisting of Al, Au, Sb, In, Ag and Ga.

[0088] The compound including Si (silicon), Ni (first material), and Al (second material) is preferably, for example, NiAuSi, NiSbSi, NiInSi, NiAgSi, or NiGaSi other than NiAlSi.

[0089] The conversion step of converting the amorphous silicon 1 into the single crystal silicon 10 may further include a fourth step S4' of converting at least a portion of the amorphous silicon 1 remaining after the third step S3' into the single crystal silicon 10 through heat treatment. Furthermore, the conversion step may include a step of removing the second compound 11 in contact with the insulating film 2 between the third step S3' and the fourth step S4'.

[0090] After the fourth step S4', a stacked structure of amorphous silicon 1, compound 9 and single crystal silicon 10 is formed. The fourth step S4' includes a MILC (metal induced lateral crystallization) process. The thickness of the second film 6 formed in the second step S2' is preferably greater than the thickness of the first film 3 formed in the first step S1', and less than 4 times the thickness of the first film 3 formed in the first step S1'.

[0091] The present invention is not limited to the above-described embodiments, and various changes and modifications are possible without departing from the spirit and scope of the invention. Therefore, the appended claims are intended to disclose the scope of the invention.

[0092]

Explanation of symbols

[0093] 1: Amorphous silicon

[0094] 2: Insulation film

[0095] 3: The first film (e.g. Ni film)

[0096] 3': First material film (e.g. Ni film)

[0097] 4: Silicide (such as Ni silicide)

[0098] 6: Second film (e.g. Al film)

[0099] 7: Compounds (such as NiAlSi)

[0100] 8: Second material film (e.g. Al film)

[0101] 9: Compounds (such as NiAlSi)

[0102] 10: Monocrystalline silicon

[0103] 11: Second compound (e.g. NiAl)

Claims

1. A method for manufacturing a semiconductor device, comprising a step of converting amorphous silicon into single crystal silicon, wherein the conversion step comprises: In a first step, a first film containing a first material is formed so as to cover the amorphous silicon by a treatment accompanied by heating, thereby forming a silicide in contact with the amorphous silicon; A second step, after the first step, forming a second film containing a second material by a treatment accompanied by heating so as to cover the silicide, thereby forming a compound containing Si, the first material and the second material in contact with the silicide; as well as Step 3, converting the silicide remaining after step 2 into the compound through heat treatment; The first material is one material selected from the group consisting of Ni, Pd, Ti, Cu, Pt, Co, Mo, Mg, W, Cr and Mn, and The second material is one material selected from the group consisting of Al, Au, Sb, In, Ag and Ga.

2. The method for manufacturing a semiconductor device according to claim 1, wherein: The conversion step further includes: a fourth step of converting at least a portion of the amorphous silicon remaining after the third step into single crystal silicon through heat treatment.

3. The method for manufacturing a semiconductor device according to claim 2, wherein: Through the fourth step, a stacked structure of the amorphous silicon, the compound, and the single crystal silicon is formed.

4. The method for manufacturing a semiconductor device according to claim 3, wherein: The fourth step includes a metal induced lateral crystallization (MILC) process.

5. The method for manufacturing a semiconductor device according to any one of claims 1 to 4, wherein: The thickness of the second film formed in the second step is greater than the thickness of the first film formed in the first step and less than 4 times the thickness of the first film formed in the first step.

6. The method for manufacturing a semiconductor device according to any one of claims 1 to 5, wherein: The second material is Al.

7. The method for manufacturing a semiconductor device according to any one of claims 1 to 5, wherein: The first material is Ni.

8. The method for manufacturing a semiconductor device according to any one of claims 1 to 5, wherein: The first material is Ni, and the second material is Al.

9. The method for manufacturing a semiconductor device according to any one of claims 1 to 4, wherein: In the first step, the first film containing the first material is formed in a manner covering an insulating film other than the amorphous silicon through a treatment accompanied by heating, thereby forming a first material film in contact with the insulating film other than the silicide in contact with the amorphous silicon.

10. The method for manufacturing a semiconductor device according to claim 9, wherein: The converting step further includes a step of removing the first material film in contact with the insulating film between the first step and the second step.

11. The method for manufacturing a semiconductor device according to claim 10, wherein: In the second step, the second film containing the first material is formed by a treatment accompanied by heating in a manner covering the insulating film except for the silicide, thereby forming a second material film in contact with the insulating film in addition to the compound in contact with the silicide.

12. The method for manufacturing a semiconductor device according to claim 11, wherein: The converting step further includes a step of removing the second material film in contact with the insulating film between the second step and the third step.

13. The method for manufacturing a semiconductor device according to claim 9, wherein: In the second step, the second film containing the second material is formed by a treatment accompanied by heating in a manner covering the silicide and the first material film, thereby obtaining a second compound of the first material and the second material in contact with the insulating film in addition to the compound in contact with the silicide.

14. The method for manufacturing a semiconductor device according to claim 13, wherein: The converting step includes a step of removing the second compound in contact with the insulating film between the second step and the third step.

15. The method for manufacturing a semiconductor device according to claim 13, wherein: The converting step further includes, after the third step, a step of removing the second compound in contact with the insulating film.

16. A semiconductor device comprising single crystal silicon manufactured by the semiconductor device manufacturing method according to any one of claims 1 to 15.

17. The semiconductor device according to claim 16, wherein: The single crystal silicon constitutes a part of a thin film transistor or a semiconductor memory device.

18. A method for manufacturing a semiconductor device, comprising a step of converting amorphous silicon into single crystal silicon, wherein the conversion step comprises: In a first step, a first film containing a first material is formed so as to cover the amorphous silicon. a second step of forming a second film containing a second material so as to cover the first film after the first step; and A third step, after the second step, forming a compound containing Si, the first material and the second material by heat treatment; The first material is one material selected from the group consisting of Ni, Pd, Ti, Cu, Pt, Co, Mo, Mg, W, Cr and Mn, and The second material is one material selected from the group consisting of Al, Au, Sb, In, Ag and Ga.

19. The method for manufacturing a semiconductor device according to claim 18, wherein: The conversion step further includes: a fourth step of converting at least a portion of the amorphous silicon remaining after the third step into single crystal silicon through heat treatment.

20. The method for manufacturing a semiconductor device according to claim 19, wherein: Through the fourth step, a stacked structure of the amorphous silicon, the compound, and the single crystal silicon is formed.

21. The method for manufacturing a semiconductor device according to claim 20, wherein: The fourth step includes a metal induced lateral crystallization (MILC) process.

22. The method for manufacturing a semiconductor device according to any one of claims 18 to 21, wherein: The thickness of the second film formed in the second step is greater than the thickness of the first film formed in the first step and less than 4 times the thickness of the first film formed in the first step.

23. The method for manufacturing a semiconductor device according to any one of claims 18 to 22, wherein: The second material is Al.

24. The method for manufacturing a semiconductor device according to any one of claims 18 to 22, wherein: The first material is Ni.

25. The method for manufacturing a semiconductor device according to any one of claims 18 to 22, wherein: The first material is Ni, and the second material is Al.

26. A semiconductor device comprising single crystal silicon manufactured by the semiconductor device manufacturing method according to any one of claims 18 to 25.

27. The semiconductor device according to claim 26, wherein: The single crystal silicon constitutes a part of a thin film transistor or a semiconductor memory device.

28. A semiconductor device comprising a stacked structure of amorphous silicon, a compound and single crystal silicon, wherein The compound is a compound of Si, a first material and a second material, The first material is one material selected from the group consisting of Ni, Pd, Ti, Cu, Pt, Co, Mo, Mg, W, Cr and Mn, and The second material is one material selected from the group consisting of Al, Au, Sb, In, Ag and Ga.

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