Furnace tube and use method thereof

Abstract

The invention discloses a furnace tube and a use method thereof. The furnace tube comprises a chamber for processing a wafer; the normal-pressure air inlet device and the low-pressure air inlet device are used for supplying air to the cavity, and the normal-pressure air inlet device and the low-pressure air inlet device are respectively and independently connected with the cavity; the normal pressure control device and the low pressure control device are used for controlling the air pressure in the cavity, and the normal pressure control device and the low pressure control device respectively and independently control the air pressure in the cavity; the normal-pressure gas ejector pipe is located in the cavity and connected with the normal-pressure gas inlet device, and the low-pressure gas ejector pipe is located in the cavity and connected with the low-pressure gas inlet device. Compatibility of normal-pressure process treatment and low-pressure process treatment is achieved through one furnace tube.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and more particularly to a furnace tube and a method for using the same. Background Art

[0002] In the manufacturing process of semiconductor chips, furnace tubes are an indispensable equipment. Furnace tubes can be used in processes such as deposition, diffusion, oxidation and annealing on wafers.

[0003] In the related art, the furnace tube can only realize normal pressure control or low pressure control individually, that is, there are only normal pressure furnace tubes or low furnace pressure tubes.

[0004] In view of the existence of the above technical problems, the present application provides a new furnace tube and a method of using the same to at least partially solve the above problems. Summary of the invention

[0005] A series of simplified concepts are introduced in the Summary of the Invention section, which will be further described in detail in the Detailed Description of the Invention section. The Summary of the Invention section of this application does not mean to attempt to define the key features and essential technical features of the claimed technical solution, nor does it mean to attempt to determine the scope of protection of the claimed technical solution.

[0006] In view of the existing problems, the present application provides a furnace tube, comprising:

[0007] chambers where wafers are processed;

[0008] A normal-pressure air intake device and a low-pressure air intake device for supplying air to the chamber, wherein the normal-pressure air intake device and the low-pressure air intake device are independently connected to the chamber;

[0009] A normal pressure control device and a low pressure control device for controlling the air pressure in the chamber, wherein the normal pressure control device and the low pressure control device independently control the air pressure in the chamber;

[0010] A normal-pressure air injection pipe located inside the chamber and connected to the normal-pressure air intake device, and a low-pressure air injection pipe located inside the chamber and connected to the low-pressure air intake device.

[0011] In some embodiments of the present application, the chamber includes an air inlet end and an air outlet end;

[0012] The normal-pressure air intake device is connected to the normal-pressure air injection pipe via the air intake end, and the low-pressure air intake device is connected to the low-pressure air injection pipe via the air intake end;

[0013] The normal pressure control device and the low pressure control device are connected to the gas outlet end respectively.

[0014] In some embodiments of the present application, the low pressure control device includes:

[0015] A first main exhaust pipe, a first branch exhaust pipe, a second branch exhaust pipe and a second main exhaust pipe are provided for the gas passage, wherein the air inlet end of the first main exhaust pipe is connected to the air outlet end; the air inlet ends of the first branch exhaust pipe and the second branch exhaust pipe are respectively connected to the exhaust end of the first main exhaust pipe, and the exhaust ends of the first branch exhaust pipe and the second branch exhaust pipe are respectively connected to the air inlet end of the second main exhaust pipe;

[0016] a main valve for controlling the internal air pressure of the chamber when the chamber is in a process state, the main valve being arranged on the first branch exhaust pipe;

[0017] a bypass pneumatic valve for controlling the internal pressure of the chamber when the chamber is in a non-process state, wherein the bypass pneumatic valve is arranged on the second branch exhaust pipe;

[0018] An air pump is used to pump gas inside the chamber, one end of the air pump is connected to the exhaust end of the second main exhaust pipe, and the other end is connected to the exhaust gas treatment device.

[0019] In some embodiments of the present application, the atmospheric pressure control device includes:

[0020] a third main exhaust pipe, a mixed exhaust pipe, a drain pipe, a first branch exhaust pipe, a second branch exhaust pipe, a third branch exhaust pipe, and a fourth branch exhaust pipe; the exhaust end of the third main exhaust pipe is connected to one end of the condenser, the other end of the condenser is connected to the inlet of the mixed exhaust pipe, the outlet of the mixed exhaust pipe is respectively connected to the inlet of the drain pipe and the air inlet ends of the first branch exhaust pipe, the second branch exhaust pipe, the third branch exhaust pipe, and the fourth branch exhaust pipe, and the exhaust ends of the first branch exhaust pipe, the second branch exhaust pipe, the third branch exhaust pipe, and the fourth branch exhaust pipe are respectively connected to the exhaust gas treatment device;

[0021] The drainage pipe is provided with a water tank and a pneumatic valve; the first branch exhaust pipe is provided with a pneumatic valve and an absolute pressure control valve; the second branch exhaust pipe is provided with a pneumatic valve and a relative pressure control valve; the third branch exhaust pipe is provided with an automatic valve and a one-way valve; the fourth branch exhaust pipe is provided with a pneumatic valve;

[0022] The relative pressure control valve is used to control the air pressure inside the chamber when the temperature inside the chamber is higher than a first set temperature;

[0023] The absolute pressure control valve is used to control the gas pressure inside the chamber when the temperature inside the chamber is less than or equal to the first set temperature.

[0024] In some embodiments of the present application, the atmospheric pressure jet pipe includes a main body extending along the height direction of the chamber and a connecting part connected to the atmospheric pressure air inlet device, a plurality of nozzles are evenly arranged on the main body, the air inlet end is located at the bottom of the chamber, the size of the nozzle changes with the distance between the nozzle and the air inlet end, and the farther the nozzle is from the air inlet end, the larger the size of the nozzle is; the height of the uppermost nozzle is greater than or equal to the height of the uppermost wafer in the chamber.

[0025] In some embodiments of the present application, the low-pressure jet pipe is in an "L" shape, one end of the low-pressure jet pipe is connected to the low-pressure air inlet device, and the other end of the low-pressure jet pipe is an air outlet, extending upward along the height direction of the chamber, and the height of the low-pressure jet pipe is lower than the height of the lowest wafer in the chamber.

[0026] In some embodiments of the present application, the atmospheric pressure air intake device includes:

[0027] a first nitrogen gas supply pipe, an oxygen gas supply pipe, a hydrogen gas supply pipe, a first mixed gas supply pipe, a second mixed gas supply pipe and a third mixed gas supply pipe;

[0028] The exhaust end of the first nitrogen gas supply pipe is connected to the intake end of the first nitrogen gas branch gas supply pipe and the second nitrogen gas branch gas supply pipe respectively, the exhaust ends of the first nitrogen gas branch gas supply pipe and the oxygen gas supply pipe are connected to the intake end of the first mixed gas supply pipe respectively, the exhaust ends of the second nitrogen gas branch gas supply pipe and the hydrogen gas supply pipe are connected to the intake end of the second mixed gas supply pipe respectively, the exhaust ends of the first mixed gas supply pipe and the second mixed gas supply pipe are connected to the intake end of the third mixed gas supply pipe respectively, and the exhaust end of the third mixed gas supply pipe is connected to the intake end of the atmospheric pressure injection pipe;

[0029] The first nitrogen gas supply pipe, the oxygen gas supply pipe and the hydrogen gas supply pipe are respectively provided with a filter, a manual valve, a pressure regulating valve and a pressure sensor in sequence, the hydrogen gas supply pipe is also provided with a pneumatic valve behind the pressure sensor, and the first nitrogen gas branch gas supply pipe and the second nitrogen gas branch gas supply pipe are respectively provided with a pneumatic valve;

[0030] The first mixed gas supply pipe and the second mixed gas supply pipe are respectively provided with a gas mass flow controller and a pneumatic valve, and the third mixed gas supply pipe is provided with an igniter.

[0031] In some embodiments of the present application, the low-pressure air intake device includes:

[0032] a second nitrogen gas supply pipe, a fluorine gas supply pipe, a special gas supply pipe, a fourth mixed gas supply pipe, a fifth mixed gas supply pipe, a sixth mixed gas supply pipe, a first mixed branch gas supply pipe, a second mixed branch gas supply pipe, a third mixed branch gas supply pipe, and a fourth mixed branch gas supply pipe;

[0033] The exhaust end of the second nitrogen gas supply pipe is connected to the inlet ends of the third nitrogen gas branch gas supply pipe and the fourth nitrogen gas branch gas supply pipe, respectively; the exhaust ends of the third nitrogen gas branch gas supply pipe and the fluorine gas supply pipe are connected to the inlet end of the fourth mixed gas supply pipe, respectively; the exhaust ends of the fourth nitrogen gas branch gas supply pipe and the special gas gas supply pipe are connected to the inlet end of the fifth mixed gas supply pipe, respectively; the exhaust end of the fourth mixed gas supply pipe is connected to the inlet ends of the first mixed gas branch gas supply pipe and the second mixed gas branch gas supply pipe, respectively; the exhaust end of the fifth mixed gas supply pipe is connected to the inlet ends of the third mixed gas branch gas supply pipe and the fourth mixed gas branch gas supply pipe, respectively; the exhaust ends of the first mixed gas branch gas supply pipe and the third mixed gas branch gas supply pipe are connected to the inlet end of the sixth mixed gas supply pipe, the outlet end of the sixth mixed gas supply pipe is connected to the inlet end of the low-pressure jet pipe, and the exhaust ends of the second mixed gas branch gas supply pipe and the fourth mixed gas branch gas supply pipe are connected to the second main exhaust pipe, respectively;

[0034] The second nitrogen gas supply pipe is provided with a filter, a manual valve, a pressure regulating valve and a pressure sensor in sequence; the fluorine gas supply pipe is provided with a filter, a manual valve, a filter, a pressure sensor and a pneumatic valve in sequence; the special gas supply pipe is provided with a filter, a manual valve, a filter, a pressure regulating valve, a pressure sensor and a pneumatic valve in sequence; the third nitrogen branch gas supply pipe, the fourth nitrogen branch gas supply pipe, the first mixing branch gas supply pipe, the second mixing branch gas supply pipe, the third mixing branch gas supply pipe and the fourth mixing branch gas supply pipe are respectively provided with a pneumatic valve; the fourth mixing gas supply pipe and the fifth mixing gas supply pipe are both provided with a gas mass flow controller.

[0035] In some embodiments of the present application, the exhaust gas treatment device includes at least two exhaust gas treatment chambers, and when one exhaust gas treatment chamber breaks down, it can be switched to another exhaust gas treatment chamber.

[0036] According to another aspect of the present application, a method for using the furnace tube is provided, comprising the following steps:

[0037] The atmospheric pressure air intake device and the atmospheric pressure control device remain enabled, and the low pressure air intake device and the low pressure pressure control device remain closed, so that the wafer is subjected to atmospheric pressure process in the chamber.

[0038] In some embodiments of the present application, the steps of controlling the working environment in the chamber to switch from a low-pressure environment to a normal-pressure environment are as follows:

[0039] Controlling the low-pressure gas supply device to introduce a mixed gas of fluorine gas and nitrogen gas into the chamber to completely remove the film layer formed on the inner wall of the chamber;

[0040] Close the low-pressure gas supply device and the low-pressure pressure control device, open the normal-pressure gas intake device, and introduce nitrogen to change the low-pressure environment in the chamber into a normal-pressure state;

[0041] The atmospheric pressure control device is turned on.

[0042] According to another aspect of the present application, a method for using the furnace tube is provided, wherein the low-pressure air intake device and the low-pressure pressure control device remain enabled, and the normal-pressure air intake device and the normal-pressure pressure control device remain closed, so that the wafer is subjected to a low-pressure process in the chamber.

[0043] According to the furnace tube and the method of using the same according to the embodiments of the present application, by providing a normal-pressure air intake device for supplying gas to the chamber and a normal-pressure pressure control device for controlling the air pressure in the chamber, the wafer can be subjected to normal-pressure process treatment, and by providing a low-pressure air intake device for supplying gas to the chamber and a low-pressure pressure control device for controlling the air pressure in the chamber, the wafer can be subjected to low-pressure process treatment, thereby achieving compatibility between normal-pressure process treatment and low-pressure process treatment through one furnace tube. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] The following drawings of the present application are used as a part of the present application for understanding the present application. The drawings show the embodiments of the present application and their descriptions, which are used to explain the principle of the present application.

[0045] Figure 1 A schematic structural diagram of a furnace tube according to an embodiment of the present application is shown.

[0046] Figure 2 A partial structural schematic diagram of a furnace tube according to an embodiment of the present application is shown.

[0047] Figure 3 A schematic structural diagram of a normal pressure control device according to an embodiment of the present application is shown.

[0048] Figure 4 A schematic structural diagram of a low-pressure pressure control device according to an embodiment of the present application is shown.

[0049] Figure 5 A schematic structural diagram of an exhaust gas treatment device according to an embodiment of the present application is shown.

[0050] Figure 6 A schematic structural diagram of a normal pressure air intake device according to an embodiment of the present application is shown.

[0051] Figure 7 A schematic structural diagram of a low-pressure air intake device according to an embodiment of the present application is shown.

[0052] Figure 8 A schematic structural diagram of a chamber and a normal-pressure jet pipe and a low-pressure jet pipe arranged inside the chamber of an embodiment of the present application is shown.

[0053] Fig. 9 A schematic structural diagram of a normal pressure jet pipe according to an embodiment of the present application is shown.

[0054] Fig.10 A schematic structural diagram of a low-pressure jet pipe according to an embodiment of the present application is shown. DETAILED DESCRIPTION

[0055] In the following description, a large number of specific details are provided to provide a more thorough understanding of the present application. However, it is apparent to those skilled in the art that the present application can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present application, some technical features well known in the art are not described.

[0056] It should be understood that the present application can be implemented in different forms and should not be construed as being limited to the embodiments presented herein. On the contrary, providing these embodiments will make the disclosure thorough and complete and fully convey the scope of the present application to those skilled in the art. In the accompanying drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity. The same reference numerals throughout represent the same elements.

[0057] It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present application, the first element, component, region, layer or part discussed below can be represented as a second element, component, region, layer or part.

[0058] Spatially relative terms such as "under," "below," "below," "under," "above," "above," etc., may be used herein for ease of description to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that in addition to the orientations shown in the figures, the spatially relative terms are intended to include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is flipped, then the elements or features described as "under other elements" or "under" or "under" will be oriented as "on" the other elements or features. Therefore, the exemplary terms "under" and "under" may include both upper and lower orientations. The device may be oriented otherwise (rotated 90 degrees or other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0059] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be limiting of the present application. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0060] In the related art, the furnace tube can only realize normal pressure control or low pressure control individually, that is, there are only normal pressure furnace tubes or low furnace pressure tubes.

[0061] In order to solve at least one of the above-mentioned technical problems, the present application provides a furnace pipe, comprising: a chamber for processing wafers; a normal-pressure air intake device and a low-pressure air intake device for supplying air to the chamber, the normal-pressure air intake device and the low-pressure air intake device being independently connected to the chamber respectively; a normal-pressure pressure control device and a low-pressure pressure control device for controlling the air pressure in the chamber, the normal-pressure pressure control device and the low-pressure pressure control device being independently controlling the air pressure in the chamber respectively; a normal-pressure injection pipe located inside the chamber and connected to the normal-pressure air intake device, and a low-pressure injection pipe located inside the chamber and connected to the low-pressure air intake device.

[0062] According to the furnace tube of the present application, by providing a normal-pressure air intake device for supplying gas to the chamber and a normal-pressure pressure control device for controlling the air pressure in the chamber, the wafer can be subjected to normal-pressure process treatment, and by providing a low-pressure air intake device for supplying gas to the chamber and a low-pressure pressure control device for controlling the air pressure in the chamber, the wafer can be subjected to low-pressure process treatment, thereby achieving compatibility between normal-pressure process treatment and low-pressure process treatment through one furnace tube.

[0063] In order to thoroughly understand the present application, detailed steps and structures will be presented in the following description to illustrate the technical solution proposed by the present application. The preferred embodiments of the present application are described in detail below, but in addition to these detailed descriptions, the present application may also have other implementation methods.

[0064] Reference below Figures 1 to 10 A furnace tube according to multiple embodiments of the present application is described. The furnace tube includes: a chamber 110 for processing wafers; a normal pressure air intake device 120 and a low pressure air intake device 130 for supplying air to the chamber 110, the normal pressure air intake device 120 and the low pressure air intake device 130 are independently connected to the chamber 110; a normal pressure control device 170 and a low pressure control device 180 for controlling the air pressure in the chamber 110, the normal pressure control device 170 and the low pressure control device 180 independently control the air pressure in the chamber 110; a normal pressure gas injection pipe 140 connected to the normal pressure gas intake device 120 located inside the chamber 110, and a low pressure gas injection pipe 150 connected to the low pressure gas intake device 130 located inside the chamber 110.

[0065] When the furnace tube of this embodiment is actually working, the atmospheric pressure air intake device 120 and the atmospheric pressure control device 170 can be controlled to be in an enabled state, and the low pressure air intake device 130 and the low pressure pressure control device 180 can be in a closed state, so that the air pressure in the chamber 110 can be controlled to be in a normal pressure state by the atmospheric pressure pressure control device 170, and the atmospheric pressure air intake device 120 supplies air to the chamber 110 through the atmospheric pressure jet pipe 140, so that the wafers in the furnace tube can be processed by atmospheric pressure process. Alternatively, the low pressure air intake device 130 and the low pressure pressure control device 180 can be controlled to be in an enabled state, and the atmospheric pressure air intake device 120 and the atmospheric pressure pressure control device 170 can be in a closed state, so that the air pressure in the chamber 110 can be controlled to be in a low pressure state by the low pressure pressure control device 180, and the low pressure air intake device 130 supplies air to the chamber 110 through the low pressure jet pipe 150, so that the wafers in the furnace tube can be processed by low pressure process.

[0066] Therefore, through the furnace tube of this embodiment, the wafer can be subjected to both normal pressure process treatment and low pressure process treatment, and the compatibility of normal pressure process treatment and low pressure process treatment is achieved through one furnace tube.

[0067] In some embodiments, the chamber 110 includes an air inlet end and an air outlet end; the atmospheric pressure air inlet device 120 is connected to the atmospheric pressure jet pipe 140 through the air inlet end, and the low pressure air inlet device 130 is connected to the low pressure jet pipe 150 through the air inlet end; the atmospheric pressure control device 170 and the low pressure control device 180 are respectively connected to the air outlet end.

[0068] Among them, Figure 2As shown, a main exhaust pipe 160 is provided at the gas outlet end of the chamber 110, and the normal pressure control device 170 and the low pressure control device are respectively connected to different parts of the main exhaust pipe 160, so as to be respectively connected to the gas outlet end of the chamber 110 through the main exhaust pipe 160, thereby controlling the chamber 110 to be in a normal pressure state or a low pressure state.

[0069] In some embodiments, Figure 3 As shown, the atmospheric pressure control device 170 includes: a third main exhaust pipe 1701, a mixed exhaust pipe 1703, a drain pipe 1705, a first branch exhaust pipe 1706, a second branch exhaust pipe 1709, a third branch exhaust pipe 1712, and a fourth branch exhaust pipe 1715; the exhaust end of the third main exhaust pipe 1701 is connected to one end of the condenser 1702, the other end of the condenser 1702 is connected to the inlet of the mixed exhaust pipe 1703, the outlet of the mixed exhaust pipe 1703 is respectively connected to the inlet of the drain pipe 1705 and the air inlet ends of the first branch exhaust pipe 1706, the second branch exhaust pipe 1709, the third branch exhaust pipe 1712 and the fourth branch exhaust pipe 1715, the first branch exhaust pipe 1706, the second branch exhaust pipe 1709, the third branch exhaust pipe 1712 and the fourth branch exhaust pipe 1715 The exhaust ends of the pipe 1712 and the fourth branch exhaust pipe 1715 are respectively connected to the exhaust gas treatment device 190; the drain pipe 1705 is provided with a water tank 1704 and a pneumatic valve 1717; the first branch exhaust pipe 1706 is provided with a pneumatic valve 1707 and an absolute pressure control valve 1708; the second branch exhaust pipe 1709 is provided with a pneumatic valve 1710 and a relative pressure control valve 1711; the third branch exhaust pipe 1712 is provided with an automatic valve 1713 and a one-way valve 1714; the fourth branch exhaust pipe 1715 is provided with a pneumatic valve 1716; the relative pressure control valve 1711 is used to control the air pressure in the chamber 110 when the temperature in the chamber 110 is higher than the first set temperature; the absolute pressure control valve 1708 is used to control the air pressure in the chamber 110 when the temperature in the chamber 110 is less than or equal to the first set temperature.

[0070] Specifically, when it is necessary to control the chamber 110 to be at a normal pressure, it can be determined whether to control the air pressure in the chamber 110 to be at a normal pressure state through the relative pressure control valve 1711 or through the absolute pressure control valve 1708 according to whether the temperature in the chamber 110 is higher than the first set temperature. Exemplarily, when the temperature in the chamber 110 is higher than the first set temperature, the first branch exhaust pipe 1706 can be controlled to be in a closed state and the second branch exhaust pipe 1709 can be controlled to be in a conducting state (this is achieved by controlling the pneumatic valve 1707 and the absolute pressure control valve 1708 on the first branch exhaust pipe 1706 to be in a closed state, and the pneumatic valve 1710 and the relative pressure control valve 1711 on the second branch exhaust pipe 1709 to be in an open state). At this time, the gas in the chamber 110 can enter the third main exhaust pipe 1701 through the main exhaust pipe 160, and be cooled when passing through the condenser 1702 (for example, the process The water vapor generated is condensed), and the liquid component generated after cooling enters the water tank 1704 on the drain pipe 1705 through the mixed drainage pipe 1703 for storage, and can be discharged to the outside by opening the pneumatic valve 1717 after being stored to a certain extent. The condensed gas enters the second branch exhaust pipe 1709 through the mixed drainage pipe 1703, and enters the exhaust gas treatment device 190 through the second branch exhaust pipe 1709, so as to ensure that the air pressure in the chamber 110 is at normal pressure; when the temperature in the chamber 110 is less than or equal to the first set temperature, the second branch exhaust pipe 1709 can be controlled to be in a closed state. The first branch exhaust pipe 1706 is in a conducting state (this is achieved by controlling the pneumatic valve 1707 and the absolute pressure control valve 1708 on the first branch exhaust pipe 1706 to be in an open state, and the pneumatic valve 1710 and the relative pressure control valve 1711 on the second branch exhaust pipe 1709 to be in a closed state). The absolute pressure control valve 1708 can use the principle of siphon to generate a certain suction force to extract the gas in the chamber 110. By controlling the opening and closing angle of the pneumatic valve 1707 set on the first branch exhaust pipe 1706, the pressure in the chamber 110 can be controlled, so that the gas in the chamber 110 can pass through The main exhaust pipe 160 enters the third main exhaust pipe 1701 and is cooled when passing through the condenser 1702 (for example, the water vapor generated by the process can be condensed). The liquid component generated after cooling enters the water tank 1704 on the drain pipe 1705 through the mixed discharge pipe 1703 for storage, and can be discharged to the outside by opening the pneumatic valve 1717 after being stored to a certain extent. The condensed gas enters the first branch exhaust pipe 1706 through the mixed discharge pipe 1703, and enters the exhaust gas treatment device 190 through the first branch exhaust pipe 1706, so as to ensure that the air pressure in the chamber 110 is at normal pressure.

[0071] When the pressure in the chamber 110 is too high, the automatic valve 1713 provided on the third branch exhaust pipe 1712 will automatically open, and the pressure in the chamber 110 will be relieved through the automatic valve 1713 and the one-way valve 1714 provided on the third branch exhaust pipe 1712 to reduce the pressure in the chamber 110.

[0072] When there is no need to perform process on the wafer in the chamber 110 , the pneumatic valve 1716 on the fourth branch exhaust pipe 1715 can be opened to exhaust the gas in the chamber 110 through the fourth branch exhaust pipe 1715 , and the exhausted gas can enter the exhaust gas treatment device 190 .

[0073] Figure 1 GN2 introduced into the absolute pressure control valve 1708 or the relative pressure control valve 1711 refers to industrial grade pure nitrogen (General Nitrogen).

[0074] In some embodiments, the first set temperature can be set according to actual conditions. For example, the first set temperature can be 1100° C. or any other suitable temperature, which is not limited.

[0075] In some embodiments, Figure 6 As shown, the atmospheric pressure intake device 120 includes: a first nitrogen supply pipe 1201, an oxygen supply pipe 1202, a hydrogen supply pipe 1203, a first mixed supply pipe 1206, a second mixed supply pipe 1207 and a third mixed supply pipe 1208; the exhaust end of the first nitrogen supply pipe 1201 is connected to the intake end of the first nitrogen branch supply pipe 1204 and the second nitrogen branch supply pipe 1205, respectively, the exhaust ends of the first nitrogen branch supply pipe 1204 and the oxygen supply pipe 1202 are connected to the intake end of the first mixed supply pipe 1206, respectively, the exhaust ends of the second nitrogen branch supply pipe 1205 and the hydrogen supply pipe 1203 are connected to the intake end of the second mixed supply pipe 1207, respectively, and the first mixed supply pipe 1206 and the second mixed supply pipe 1207 are connected to the intake end of the second nitrogen branch supply pipe 1205. The exhaust ends of the third mixed gas supply pipe 1207 are respectively connected to the inlet ends of the third mixed gas supply pipe 1208, and the exhaust end of the third mixed gas supply pipe 1208 is connected to the inlet end of the atmospheric jet pipe 140; the first nitrogen gas supply pipe 1201, the oxygen gas supply pipe 1202 and the hydrogen gas supply pipe 1203 are respectively provided with a filter, a hand valve, a pressure regulating valve, and a pressure sensor in sequence, and the hydrogen gas supply pipe 1203 is also provided with a pneumatic valve located after the pressure sensor, and the first nitrogen gas branch gas supply pipe 1204 and the second nitrogen gas branch gas supply pipe 1205 are respectively provided with a pneumatic valve; the first mixed gas supply pipe 1206 and the second mixed gas supply pipe 1207 are respectively provided with a gas mass flow controller and a pneumatic valve, and the third mixed gas supply pipe 1208 is provided with an igniter 1209 (the igniter 1209 can be Figure 6 Torch component).

[0076] Specifically, the first nitrogen gas supply pipe 1201, the oxygen gas supply pipe 1202 and the hydrogen gas supply pipe 1203 can be connected to the nitrogen gas source, the oxygen gas source and the hydrogen gas source respectively. When the gas pressure in the chamber 110 is controlled to be at a normal pressure state by the normal pressure control device 170, nitrogen, oxygen and hydrogen can be supplied to the chamber 110 respectively through the first nitrogen gas supply pipe 1201, the oxygen gas supply pipe 1202 and the hydrogen gas supply pipe 1203. Among them, a part of the nitrogen supplied by the first nitrogen supply pipe 1201 can enter the first mixing gas supply pipe 1206 through the first nitrogen branch gas supply pipe 1204, and the oxygen supplied by the oxygen supply pipe 1202 can enter the first mixing gas supply pipe 1206, and the nitrogen and oxygen are mixed in the first mixing gas supply pipe 1206; another part of the nitrogen supplied by the first nitrogen supply pipe 1201 can enter the second mixing gas supply pipe 1207 through the second nitrogen branch gas supply pipe 1205, and the hydrogen supplied by the hydrogen supply pipe 1203 can enter the second mixing gas supply pipe 1207, and the nitrogen and hydrogen are mixed in the second mixing gas supply pipe 1207; thereafter, the mixed nitrogen and oxygen as well as the mixed nitrogen and hydrogen enter the third mixing gas supply pipe 1208 for mixing, and after being ignited by the igniter 1209, enter the chamber 110 through the atmospheric pressure injection pipe 140.

[0077] Among them, the filters respectively arranged on the first nitrogen supply pipe 1201, the oxygen supply pipe 1202 and the hydrogen supply pipe 1203 can filter the gas in the pipes; the hand valves respectively arranged on the first nitrogen supply pipe 1201, the oxygen supply pipe 1202 and the hydrogen supply pipe 1203 can open and close the pipes to allow the gas to flow or stop flowing in the pipes; the pressure regulating valves respectively arranged on the first nitrogen supply pipe 1201, the oxygen supply pipe 1202 and the hydrogen supply pipe 1203 can adjust the pressure in the pipes; the pressure sensors respectively arranged on the first nitrogen supply pipe 1201, the oxygen supply pipe 1202 and the hydrogen supply pipe 1203 can detect the pressure in the pipes.

[0078] The gas mass flow controller provided on the first mixed gas supply pipe 1206 can precisely measure and control the mass / flow of the mixed nitrogen and oxygen, and the gas mass flow controller provided on the second mixed gas supply pipe 1207 can precisely measure and control the mass / flow of the mixed nitrogen and hydrogen, so that the gas flow rate participating in the reaction in the chamber 110 can be controlled within a very precise range, so that the reaction proceeds according to the set process parameters, which helps to improve the consistency and quality of the product. Taking chemical vapor deposition in silicon wafer manufacturing as an example, precise control of the mass flow rate of the reaction gas can ensure that the thickness of the film deposited on the silicon wafer is uniform and the performance is stable.

[0079] In some embodiments, Figure 8 and Fig. 9As shown, the atmospheric pressure jet pipe 140 includes a main body 141 extending along the height direction of the chamber 110 and a connecting portion 142 connected to the atmospheric pressure inlet device 120, and a plurality of nozzles 143 are evenly arranged on the main body 141. The inlet end is located at the bottom of the chamber 110. The size of the nozzle 143 changes with the distance between the nozzle 143 and the inlet end. The farther the nozzle 143 is from the inlet end, the larger the size of the nozzle 143 is. The height of the uppermost nozzle 143 is greater than or equal to the height of the uppermost wafer in the chamber 110.

[0080] Specifically, after the mixed gas in the third mixed gas supply pipe 1208 enters the main body 141 of the atmospheric pressure jet pipe 140 through the connecting portion 142 of the atmospheric pressure jet pipe 140, it can enter the chamber 110 through a plurality of nozzles 143 arranged from bottom to top on the main body 141. Fig. 9 As shown by the dashed arrow and the solid arrow in the middle, when the mixed gas passes through the multiple nozzles 143 arranged from bottom to top, the flow rate of the mixed gas will gradually decrease. In this embodiment, by increasing the sizes of the multiple nozzles 143 arranged from bottom to top on the main body 141 in sequence, the disadvantage of the gradually decreasing flow rate of the mixed gas can be compensated, so that the gas flow rate of each nozzle 143 sprayed into the chamber 110 is uniform, so as to balance the gas flow in the chamber 110 and play a role in controlling the uniformity of the product film thickness.

[0081] In some embodiments, Figure 4 As shown, the low pressure control device 180 includes: a first main exhaust pipe 1801 providing a gas channel, a first branch exhaust pipe 1802, a second branch exhaust pipe 1804 and a second main exhaust pipe 1806, the air inlet end of the first main exhaust pipe 1801 is connected to the air outlet end of the chamber 110; the air inlet ends of the first branch exhaust pipe 1802 and the second branch exhaust pipe 1804 are respectively connected to the exhaust end of the first main exhaust pipe 1801, and the exhaust ends of the first branch exhaust pipe 1802 and the second branch exhaust pipe 1804 are respectively connected to the air inlet end of the second main exhaust pipe 1806; a main valve 1803 (the main valve 1803 can be) for controlling the internal air pressure of the chamber 110 when the chamber 110 is in a process state Figure 4 A main valve 1803 is arranged on the first branch exhaust pipe 1802; a bypass pneumatic valve 1805 is used to control the internal pressure of the chamber 110 when the chamber 110 is in a non-process state, and the bypass pneumatic valve 1805 is arranged on the second branch exhaust pipe 1804; an exhaust pump 1807 is used to suck the internal gas of the chamber 110, one end of the exhaust pump 1807 is connected to the exhaust end of the second main exhaust pipe 1806, and the other end is connected to the exhaust gas treatment device 190.

[0082] Specifically, the first main exhaust pipe 1801 can be connected to the main exhaust pipe 160. When low-pressure control of the chamber 110 is required, the first branch exhaust pipe 1802 can be controlled to be in a conducting state and the second branch exhaust pipe 1804 can be controlled to be in a closed state (this is achieved by controlling the main valve 1803 to be in an open state and the bypass pneumatic valve 1805 to be in a closed state), and the vacuum pump 1807 is started to extract gas through the vacuum pump 1807, so that the gas in the chamber 110 enters the first main exhaust pipe 1801 and the first branch exhaust pipe 1802 through the main exhaust pipe 160, and then enters the vacuum pump 1807 through the first main exhaust pipe 1801 and the first branch exhaust pipe 1802, and enters the exhaust pump 1807, and enters the exhaust gas treatment device 190 through the vacuum pump 1807, so as to ensure that the air pressure in the chamber 110 is in a low-pressure state. When low-pressure control of the chamber 110 is not required, the second branch exhaust pipe 1804 can be controlled to be in an on state and the first branch exhaust pipe 1802 can be controlled to be in a closed state (achieved by controlling the main valve 1803 to be in a closed state and the bypass pneumatic valve 1805 to be in an open state), and the gas in the chamber 110 is discharged through the second branch exhaust pipe 1804, and the discharged gas can enter the exhaust gas treatment device 190.

[0083] In some embodiments, Figure 4 and Figure 7As shown, the low-pressure air intake device 130 includes: a second nitrogen gas supply pipe 1301, a fluorine gas supply pipe 1302, a special gas supply pipe 1303, a fourth mixed gas supply pipe 1306, a fifth mixed gas supply pipe 1307, a sixth mixed gas supply pipe 1312, a first mixed branch gas supply pipe 1308, a second mixed branch gas supply pipe 1309, a third mixed branch gas supply pipe 1310 and a fourth mixed branch gas supply pipe 1311; the exhaust end of the second nitrogen gas supply pipe 1301 is connected to the intake end of the third nitrogen gas branch gas supply pipe 1304 and the fourth nitrogen gas branch gas supply pipe 1305 respectively. The exhaust ends of the third nitrogen branch gas supply pipe 1304 and the fluorine gas supply pipe 1302 are respectively connected to the inlet end of the fourth mixed gas supply pipe 1306, the exhaust ends of the fourth nitrogen branch gas supply pipe 1305 and the special gas supply pipe 1303 are respectively connected to the inlet end of the fifth mixed gas supply pipe 1307, the exhaust end of the fourth mixed gas supply pipe 1306 is respectively connected to the inlet end of the first mixed branch gas supply pipe 1308 and the second mixed branch gas supply pipe 1309, the exhaust end of the fifth mixed gas supply pipe 1307 is respectively connected to the third mixed branch gas supply pipe 1310 and the fourth mixed branch gas supply pipe 1311. The air inlet end of the first mixed branch air supply pipe 1308 and the third mixed branch air supply pipe 1310 are connected to the air inlet end of the sixth mixed air supply pipe 1312, the air outlet end of the sixth mixed air supply pipe 1312 is connected to the air inlet end of the low-pressure jet pipe 150, and the exhaust ends of the second mixed branch air supply pipe 1309 and the fourth mixed branch air supply pipe 1311 are respectively connected to the second main exhaust pipe 1806; the second nitrogen gas supply pipe 1301 is provided with a filter, a hand valve, a pressure regulating valve, and a pressure sensor in sequence; the fluorine gas supply pipe 1302 is provided with Filter, manual valve, filter, pressure sensor, pneumatic valve; the special gas supply pipe 1303 is provided with a filter, a manual valve, a filter, a pressure regulating valve, a pressure sensor, and a pneumatic valve in sequence; the third nitrogen branch supply pipe 1304, the fourth nitrogen branch supply pipe 1305, the first mixed branch supply pipe 1308, the second mixed branch supply pipe 1309, the third mixed branch supply pipe 1310 and the fourth mixed branch supply pipe 1311 are respectively provided with pneumatic valves; the fourth mixed supply pipe 1306 and the fifth mixed supply pipe 1307 are both provided with a gas mass flow controller.

[0084] Specifically, the second nitrogen gas supply pipe 1301, the fluorine gas supply pipe 1302 and the special gas supply pipe 1303 can be connected to the nitrogen gas source, the fluorine gas source and the special gas source respectively. When the gas pressure in the chamber 110 is controlled to be in a low pressure state by the low pressure control device 180, nitrogen, fluorine and special gas can be supplied to the chamber 110 respectively through the second nitrogen gas supply pipe 1301, the fluorine gas supply pipe 1302 and the special gas supply pipe 1303. Part of the nitrogen supplied by the second nitrogen supply pipe 1301 can enter the fourth mixed gas supply pipe 1306 through the third nitrogen branch gas supply pipe 1304, and the fluorine gas supplied by the fluorine gas supply pipe 1302 can enter the fourth mixed gas supply pipe 1306, and the nitrogen and fluorine gases are mixed in the fourth mixed gas supply pipe 1306; another part of the nitrogen supplied by the second nitrogen supply pipe 1301 can enter the fifth mixed gas supply pipe 1307 through the fourth nitrogen branch gas supply pipe 1305, and the special gas supply pipe 130 The supplied special gas can enter the fifth mixed gas supply pipe 1307, and the nitrogen and the special gas are mixed in the fifth mixed gas supply pipe 1307; then, the mixed nitrogen and fluorine gas enter the sixth mixed gas supply pipe 1312 through the first mixed branch gas supply pipe 1308, and the mixed nitrogen and special gas enter the sixth mixed gas supply pipe 1312 through the third mixed branch gas supply pipe 1310, and are mixed in the sixth mixed gas supply pipe 1312, and then enter the chamber 110 through the low-pressure jet pipe 150.

[0085] Among them, the filters respectively arranged on the second nitrogen gas supply pipe 1301, the fluorine gas supply pipe 1302 and the special gas supply pipe 1303 can filter the gas in the pipeline; the manual valves respectively arranged on the second nitrogen gas supply pipe 1301, the fluorine gas supply pipe 1302 and the special gas supply pipe 1303 can open and close the pipeline to allow the gas to flow or stop flowing in the pipeline; the pressure regulating valves respectively arranged on the second nitrogen gas supply pipe 1301, the fluorine gas supply pipe 1302 and the special gas supply pipe 1303 can adjust the pressure in the pipeline; the pressure sensors respectively arranged on the second nitrogen gas supply pipe 1301, the fluorine gas supply pipe 1302 and the special gas supply pipe 1303 can detect the pressure in the pipeline.

[0086] The gas mass flow controller provided on the fourth mixed gas supply pipe 1306 can precisely measure and control the mass / flow of the mixed nitrogen and fluorine gases, and the gas mass flow controller provided on the fifth mixed gas supply pipe 1307 can precisely measure and control the mass / flow of the mixed nitrogen and special gases, so that the gas flow rate participating in the reaction in the chamber 110 can be controlled within a very precise range, so that the reaction proceeds according to the set process parameters, which helps to improve the consistency and quality of the product. Taking chemical vapor deposition in silicon wafer manufacturing as an example, precise control of the mass flow rate of the reaction gas can ensure that the thickness of the film deposited on the silicon wafer is uniform and the performance is stable.

[0087] In some embodiments, the special gas supplied by the special gas supply pipe 1303 can be determined according to actual conditions, for example, it can be silane gas that participates in the reaction to deposit a thin film on a silicon wafer, etc., and this is not limited.

[0088] In some embodiments, Figure 8 and Fig.10 As shown, the low-pressure jet pipe 150 is in an "L" shape, one end of the low-pressure jet pipe 150 is connected to the low-pressure air inlet device 130, and the other end of the low-pressure jet pipe 150 is an air outlet 151, which extends upward along the height direction of the chamber 110. The height of the low-pressure jet pipe 150 is lower than the height of the lowest wafer in the chamber 110.

[0089] Since the low-pressure air intake device 130 can control the air pressure in the chamber 110 to be in a low-pressure state through components such as the main valve 1803 and the vacuum pump 1807, after the gas enters the chamber 110 through the low-pressure jet pipe 150, the air flow direction is first upward to the top of the chamber 110 and then downward to the air outlet end of the chamber 110. Therefore, by setting an "L"-shaped low-pressure jet pipe 150, the requirement of low-pressure process treatment for the mixed gas in the sixth mixed gas supply pipe 1312 to enter the chamber 110 can be met.

[0090] It can be understood that the gas entering the exhaust gas treatment device 190 can be recovered or removed and the harmful components of the gas can be reduced under the action of the exhaust gas treatment device 190, so that it can meet the emission standards after treatment and reduce air pollution.

[0091] In some embodiments, Figure 5 As shown, the exhaust gas treatment device 190 includes at least two exhaust gas treatment chambers 191 , and when one exhaust gas treatment chamber 191 fails, it can be switched to another exhaust gas treatment chamber 191 .

[0092] Specifically, the two exhaust gas treatment chambers 191 can be connected by a pipeline, and a three-way valve 192 is provided on the pipeline. The three-way valve 192 can be used to automatically switch between the two exhaust gas treatment chambers 191, so that when one exhaust gas treatment chamber 191 breaks down, it can be switched to another exhaust gas treatment chamber 191, thereby ensuring that the exhaust gas treatment device 190 can operate normally.

[0093] In some embodiments, the furnace tube may further include a control element, which receives control operations from the user and controls the atmospheric pressure air intake device 120 and the atmospheric pressure control device 170 to be in an enabled state, and the low pressure air intake device 130 and the low pressure pressure control device 180 to be in a closed state according to the control operations, so that the wafers in the furnace tube can be subjected to atmospheric pressure process treatment, or controls the atmospheric pressure air intake device 120 and the atmospheric pressure control device 170 to be in a closed state, and the low pressure air intake device 130 and the low pressure pressure control device 180 to be in an enabled state, so that the wafers in the furnace tube can be subjected to low pressure process treatment.

[0094] The control element may be a control panel, a control button, etc., which is not limited.

[0095] In some embodiments, when switching from low-pressure process to normal-pressure process, the mixed gas of fluorine gas and nitrogen gas can be continuously supplied into the chamber 110 through the low-pressure gas inlet device 130, and the film layer generated in the chamber 110 during the low-pressure process can be removed by the fluorine gas. The chemical reaction equation can be as follows:

[0096] Si+2F2→SiF4 (exothermic reaction)

[0097] The above reaction is an exothermic reaction, so it is possible to determine whether the reaction is finished by detecting the temperature in the chamber 110, and further determine whether the film layer inside the chamber 110 is completely removed. For example, a temperature sensor can be set to detect the temperature inside the chamber 110. When the film layer inside the chamber 110 is completely removed, the temperature inside the chamber 110 will drop. If the temperature sensor detects that the temperature inside the chamber 110 drops to a preset temperature or below, it means that the film layer inside the chamber 110 is completely removed. The preset temperature can be set according to the actual heat release of the chemical reaction. For example, the preset temperature can be 400°C or any other suitable temperature, which is not limited.

[0098] After it is detected that the film layer inside the chamber 110 is completely removed, the low-pressure air intake device 130 stops supplying gas to the chamber 110, and the normal-pressure air intake device 120 can be started to introduce nitrogen into the chamber 110, so that the low-pressure environment in the chamber 110 is changed to a normal-pressure state, and then the normal-pressure pressure control device 170 is turned on to keep the chamber 110 at a normal-pressure state, thereby completing the switch from low-pressure process treatment to normal-pressure process treatment, and at the same time avoiding the gas in the exhaust pipe from being re-injected into the chamber 110 to cause pollution when the furnace tube switches from the low-pressure process mode to the normal-pressure process mode.

[0099] According to another aspect of the present application, a method for using a furnace tube is provided, comprising the following steps:

[0100] The atmospheric pressure inlet device and the atmospheric pressure control device remain enabled, and the low pressure inlet device and the low pressure control device remain closed, so that the wafer is processed under atmospheric pressure in the chamber.

[0101] Among them, the furnace tube can be implemented as the furnace tube mentioned above, and reference can be made to the introduction mentioned above, which will not be repeated here.

[0102] In some embodiments, the steps for controlling the working environment in the chamber to switch from a low-pressure environment to a normal-pressure environment are as follows: control the low-pressure gas supply device to introduce a mixed gas of fluorine gas and nitrogen into the chamber to completely remove the film layer formed on the inner wall of the chamber; close the low-pressure gas supply device and the low-pressure pressure control device, open the normal-pressure air intake device, and introduce nitrogen to change the low-pressure environment in the chamber to a normal-pressure state; open the normal-pressure pressure control device.

[0103] According to another aspect of the present application, a method for using a furnace tube is provided, wherein a low-pressure air intake device and a low-pressure pressure control device remain enabled, and a normal-pressure air intake device and a normal-pressure pressure control device remain closed, so that the wafer is subjected to a low-pressure process in the chamber.

[0104] Among them, the furnace tube can be implemented as the furnace tube mentioned above, and reference can be made to the introduction mentioned above, which will not be repeated here.

[0105] In summary, according to the furnace tube and the method of using the same in the embodiments of the present application, by providing a normal-pressure air intake device for supplying air to the chamber and a normal-pressure pressure control device for controlling the air pressure in the chamber, the wafer can be subjected to normal-pressure process treatment, and by providing a low-pressure air intake device for supplying air to the chamber and a low-pressure pressure control device for controlling the air pressure in the chamber, the wafer can be subjected to low-pressure process treatment, thereby achieving compatibility between normal-pressure process treatment and low-pressure process treatment through one furnace tube.

[0106] Although example embodiments have been described herein with reference to the accompanying drawings, it should be understood that the above example embodiments are merely exemplary and are not intended to limit the scope of the present application to this. Those of ordinary skill in the art may make various changes and modifications therein without departing from the scope and spirit of the present application. All these changes and modifications are intended to be included within the scope of the present application as required by the appended claims.

[0107] Similarly, it should be understood that in order to streamline the present application and help understand one or more of the various application aspects, in the description of the exemplary embodiments of the present application, the various features of the present application are sometimes grouped together into a single embodiment, figure, or description thereof. However, the method of the present application should not be interpreted as reflecting the following intention: the claimed application requires more features than the features clearly stated in each claim. More specifically, as reflected in the corresponding claims, the application point is that the corresponding technical problem can be solved with less than all the features of a single disclosed embodiment. Therefore, the claims following the specific embodiment are hereby explicitly incorporated into the specific embodiment, wherein each claim itself serves as a separate embodiment of the present application.

[0108] In addition, those skilled in the art will appreciate that, although some embodiments described herein include certain features included in other embodiments but not other features, the combination of features of different embodiments is meant to be within the scope of the present application and form different embodiments. For example, in the claims, any one of the claimed embodiments can be used in any combination.

[0109] It should be noted that the above embodiments illustrate rather than limit the present application, and that those skilled in the art may devise alternative embodiments without departing from the scope of the appended claims. In the claims, any reference symbol between brackets should not be construed as a limitation to the claims. The use of the words first, second, and third, etc. does not indicate any order. These words may be interpreted as names.

Claims

1. A furnace tube, characterized in that: include: chambers where wafers are processed; A normal-pressure air intake device and a low-pressure air intake device for supplying air to the chamber, wherein the normal-pressure air intake device and the low-pressure air intake device are independently connected to the chamber; A normal pressure control device and a low pressure control device for controlling the air pressure in the chamber, wherein the normal pressure control device and the low pressure control device independently control the air pressure in the chamber; A normal-pressure air injection pipe located inside the chamber and connected to the normal-pressure air intake device, and a low-pressure air injection pipe located inside the chamber and connected to the low-pressure air intake device.

2. The furnace tube according to claim 1, characterized in that The chamber includes an air inlet end and an air outlet end; The normal-pressure air intake device is connected to the normal-pressure air injection pipe via the air intake end, and the low-pressure air intake device is connected to the low-pressure air injection pipe via the air intake end; The normal pressure control device and the low pressure control device are connected to the gas outlet end respectively.

3. The furnace tube according to claim 2, characterized in that The low pressure control device comprises: A first main exhaust pipe, a first branch exhaust pipe, a second branch exhaust pipe and a second main exhaust pipe are provided for the gas passage, wherein the air inlet end of the first main exhaust pipe is connected to the air outlet end; the air inlet ends of the first branch exhaust pipe and the second branch exhaust pipe are respectively connected to the exhaust end of the first main exhaust pipe, and the exhaust ends of the first branch exhaust pipe and the second branch exhaust pipe are respectively connected to the air inlet end of the second main exhaust pipe; a main valve for controlling the internal air pressure of the chamber when the chamber is in a process state, the main valve being arranged on the first branch exhaust pipe; a bypass pneumatic valve for controlling the internal pressure of the chamber when the chamber is in a non-process state, wherein the bypass pneumatic valve is arranged on the second branch exhaust pipe; An air pump is used to pump gas inside the chamber, one end of the air pump is connected to the exhaust end of the second main exhaust pipe, and the other end is connected to the exhaust gas treatment device.

4. The furnace tube according to claim 2, characterized in that: The atmospheric pressure control device comprises: a third main exhaust pipe, a mixed exhaust pipe, a drain pipe, a first branch exhaust pipe, a second branch exhaust pipe, a third branch exhaust pipe, and a fourth branch exhaust pipe; the exhaust end of the third main exhaust pipe is connected to one end of the condenser, the other end of the condenser is connected to the inlet of the mixed exhaust pipe, the outlet of the mixed exhaust pipe is respectively connected to the inlet of the drain pipe and the air inlet ends of the first branch exhaust pipe, the second branch exhaust pipe, the third branch exhaust pipe, and the fourth branch exhaust pipe, and the exhaust ends of the first branch exhaust pipe, the second branch exhaust pipe, the third branch exhaust pipe, and the fourth branch exhaust pipe are respectively connected to the exhaust gas treatment device; The drainage pipe is provided with a water tank and a pneumatic valve; the first branch exhaust pipe is provided with a pneumatic valve and an absolute pressure control valve; the second branch exhaust pipe is provided with a pneumatic valve and a relative pressure control valve; the third branch exhaust pipe is provided with an automatic valve and a one-way valve; the fourth branch exhaust pipe is provided with a pneumatic valve; The relative pressure control valve is used to control the air pressure inside the chamber when the temperature inside the chamber is higher than a first set temperature; The absolute pressure control valve is used to control the gas pressure inside the chamber when the temperature inside the chamber is less than or equal to the first set temperature.

5. The furnace tube according to claim 2, characterized in that: The atmospheric pressure gas injection pipe includes a main body extending along the height direction of the chamber and a connecting part connected to the atmospheric pressure air intake device, a plurality of nozzles are evenly arranged on the main body, the air intake end is located at the bottom of the chamber, the size of the nozzle changes with the distance between the nozzle and the air intake end, and the farther the nozzle is from the air intake end, the larger the size of the nozzle is; the height of the uppermost nozzle is greater than or equal to the height of the uppermost wafer in the chamber.

6. The furnace tube according to claim 2, characterized in that The low-pressure jet pipe is in an "L" shape, one end of the low-pressure jet pipe is connected to the low-pressure air inlet device, and the other end of the low-pressure jet pipe is an air outlet, extending upward along the height direction of the chamber, and the height of the low-pressure jet pipe is lower than the height of the lowest wafer in the chamber.

7. The furnace tube according to claim 1, characterized in that The atmospheric pressure air intake device comprises: a first nitrogen gas supply pipe, an oxygen gas supply pipe, a hydrogen gas supply pipe, a first mixed gas supply pipe, a second mixed gas supply pipe and a third mixed gas supply pipe; The exhaust end of the first nitrogen gas supply pipe is connected to the intake end of the first nitrogen gas branch gas supply pipe and the second nitrogen gas branch gas supply pipe respectively, the exhaust ends of the first nitrogen gas branch gas supply pipe and the oxygen gas supply pipe are connected to the intake end of the first mixed gas supply pipe respectively, the exhaust ends of the second nitrogen gas branch gas supply pipe and the hydrogen gas supply pipe are connected to the intake end of the second mixed gas supply pipe respectively, the exhaust ends of the first mixed gas supply pipe and the second mixed gas supply pipe are connected to the intake end of the third mixed gas supply pipe respectively, and the exhaust end of the third mixed gas supply pipe is connected to the intake end of the atmospheric pressure injection pipe; The first nitrogen gas supply pipe, the oxygen gas supply pipe and the hydrogen gas supply pipe are respectively provided with a filter, a manual valve, a pressure regulating valve and a pressure sensor in sequence, the hydrogen gas supply pipe is also provided with a pneumatic valve behind the pressure sensor, and the first nitrogen gas branch gas supply pipe and the second nitrogen gas branch gas supply pipe are respectively provided with a pneumatic valve; The first mixed gas supply pipe and the second mixed gas supply pipe are respectively provided with a gas mass flow controller and a pneumatic valve, and the third mixed gas supply pipe is provided with an igniter.

8. The furnace tube according to claim 3, characterized in that The low-pressure air intake device comprises: a second nitrogen gas supply pipe, a fluorine gas supply pipe, a special gas supply pipe, a fourth mixed gas supply pipe, a fifth mixed gas supply pipe, a sixth mixed gas supply pipe, a first mixed branch gas supply pipe, a second mixed branch gas supply pipe, a third mixed branch gas supply pipe, and a fourth mixed branch gas supply pipe; The exhaust end of the second nitrogen gas supply pipe is connected to the inlet ends of the third nitrogen gas branch gas supply pipe and the fourth nitrogen gas branch gas supply pipe, respectively; the exhaust ends of the third nitrogen gas branch gas supply pipe and the fluorine gas supply pipe are connected to the inlet end of the fourth mixed gas supply pipe, respectively; the exhaust ends of the fourth nitrogen gas branch gas supply pipe and the special gas gas supply pipe are connected to the inlet end of the fifth mixed gas supply pipe, respectively; the exhaust end of the fourth mixed gas supply pipe is connected to the inlet ends of the first mixed gas branch gas supply pipe and the second mixed gas branch gas supply pipe, respectively; the exhaust end of the fifth mixed gas supply pipe is connected to the inlet ends of the third mixed gas branch gas supply pipe and the fourth mixed gas branch gas supply pipe, respectively; the exhaust ends of the first mixed gas branch gas supply pipe and the third mixed gas branch gas supply pipe are connected to the inlet end of the sixth mixed gas supply pipe, the outlet end of the sixth mixed gas supply pipe is connected to the inlet end of the low-pressure jet pipe, and the exhaust ends of the second mixed gas branch gas supply pipe and the fourth mixed gas branch gas supply pipe are connected to the second main exhaust pipe, respectively; The second nitrogen gas supply pipe is provided with a filter, a manual valve, a pressure regulating valve and a pressure sensor in sequence; the fluorine gas supply pipe is provided with a filter, a manual valve, a filter, a pressure sensor and a pneumatic valve in sequence; the special gas supply pipe is provided with a filter, a manual valve, a filter, a pressure regulating valve, a pressure sensor and a pneumatic valve in sequence; the third nitrogen branch gas supply pipe, the fourth nitrogen branch gas supply pipe, the first mixing branch gas supply pipe, the second mixing branch gas supply pipe, the third mixing branch gas supply pipe and the fourth mixing branch gas supply pipe are respectively provided with a pneumatic valve; the fourth mixing gas supply pipe and the fifth mixing gas supply pipe are both provided with a gas mass flow controller.

9. The furnace tube according to claim 3 or 4, characterized in that: The exhaust gas treatment device comprises at least two exhaust gas treatment chambers, and when one exhaust gas treatment chamber fails, the exhaust gas treatment chamber can be switched to another exhaust gas treatment chamber.

10. A method for using the furnace tube according to claim 1, characterized in that: The following steps are involved: The atmospheric pressure air intake device and the atmospheric pressure control device remain enabled, and the low pressure air intake device and the low pressure pressure control device remain closed, so that the wafer is subjected to atmospheric pressure process in the chamber.

11. The method of use according to claim 10, characterized in that: The steps of controlling the working environment in the chamber to switch from a low-pressure environment to a normal-pressure environment are as follows: Controlling the low-pressure gas supply device to introduce a mixed gas of fluorine gas and nitrogen gas into the chamber to completely remove the film layer formed on the inner wall of the chamber; Close the low-pressure gas supply device and the low-pressure pressure control device, open the normal-pressure gas intake device, and introduce nitrogen to change the low-pressure environment in the chamber into a normal-pressure state; The atmospheric pressure control device is turned on.

12. A method for using the furnace tube according to claim 1, characterized in that: The low-pressure air intake device and the low-pressure pressure control device remain enabled, and the normal-pressure air intake device and the normal-pressure pressure control device remain closed, so that the wafer is subjected to a low-pressure process in the chamber.

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