Multi-wavelength laser chip and preparation method thereof

Abstract

The present invention provides a multi-wavelength laser chip and a preparation method thereof, relating to the field of laser technology. Among them, the multi-wavelength laser chip includes: a plurality of laser units, and each laser unit includes: a micro-optical resonator; a rare-earth gain material layer coupled to the surface of the micro-optical resonator; wherein, the resonance mode of the micro-optical resonator matches a preset wavelength in the optical gain spectrum line of the rare-earth gain material layer; wherein, when pump light irradiates the rare-earth gain material layer of any laser unit, the rare-earth gain material layer of the laser unit emits broadband fluorescence, and among the broadband fluorescence, the fluorescence of the preset wavelength that matches the resonance mode of the micro-optical resonator of the laser unit is enhanced under the resonance and mode selection effects of the micro-optical resonator of the laser unit to generate laser of the preset wavelength. The present invention can provide a high-performance and high-stability 1.5 μm multi-wavelength laser chip.

Description

Technical Field

[0001] The present invention relates to the field of laser technology, and in particular to a multi-wavelength laser chip and a method for preparing the multi-wavelength laser chip. Background Art

[0002] Lasers in the 1.5 μm wavelength range have shown great application potential in many key fields such as optical communications, biomedical imaging, environmental monitoring, and military applications due to their unique advantages. In the field of optical communications, lasers in this band have become an indispensable technical cornerstone for achieving high-speed and long-distance optical communications due to their low loss and high transmission efficiency. At the same time, in biomedical imaging, 1.5 μm lasers provide strong support for non-invasive imaging and treatment due to their deep penetration ability and low tissue damage characteristics. In addition, lasers in this band can also achieve high-precision target recognition and tracking in environmental monitoring and military applications due to their high detection sensitivity and excellent anti-interference ability.

[0003] In recent years, rare earth gain materials, especially erbium (Er) materials, have attracted much attention due to their efficient optical gain and good luminescence stability. This type of material can resist the influence of environmental factors and provides new possibilities for the generation of 1.5 μm lasers. Despite this, lasers based on erbium-doped materials currently still face the problem of insufficient optical net gain per unit length, resulting in large device size and complex preparation process, making it difficult to achieve on-chip integration and large-scale production. At the same time, existing microdisk cavities are mostly built based on passive materials, which not only increases the size of the device, but also limits the strong localization and efficient coupling of the light field.

[0004] Therefore, how to provide a high-performance, high-stability 1.5μm nanometer multi-wavelength laser chip is a technical problem that needs to be solved urgently. Summary of the invention

[0005] In view of the above problems existing in the prior art, the present invention provides a multi-wavelength laser chip and a method for preparing the multi-wavelength laser chip, so as to provide a high-performance and high-stability 1.5 μm nanometer multi-wavelength laser chip.

[0006] The present invention provides a multi-wavelength laser chip, comprising:

[0007] A plurality of laser units, each of the laser units comprising:

[0008] Micro-optical resonator; a rare-earth gain material layer coupled to the surface of the micro-optical resonator; wherein, the resonance mode of the micro-optical resonator matches a preset wavelength in the optical gain spectrum line of the rare-earth gain material layer; wherein, among the micro-optical resonators included in the plurality of laser units, the resonance mode of at least one micro-optical resonator is different from that of other micro-optical resonators; wherein, when pump light irradiates the rare-earth gain material layer of any one of the laser units, the rare-earth gain material layer of the laser unit emits broadband fluorescence, and among the broadband fluorescence, the fluorescence of the preset wavelength that matches the resonance mode of the micro-optical resonator of the laser unit is enhanced under the resonance and mode selection effects of the micro-optical resonator of the laser unit to generate the laser of the preset wavelength.

[0009] A multi-wavelength laser chip provided by the present invention, wherein the rare-earth gain material layer is composed of erbium compound nanomaterials.

[0010] The present invention provides a preparation method of a multi-wavelength laser chip, the method is used to manufacture the multi-wavelength laser chip as described above, and the method includes the following steps.

[0011] Generate a first substrate; wherein, the first substrate is transparent to light in the gain spectrum band of the rare-earth gain material; based on the first substrate, use micro-nano processing technology to etch to obtain a plurality of micro-optical resonators; wherein, among the plurality of micro-optical resonators, the resonance mode of at least one micro-optical resonator is different from that of other micro-optical resonators; use micro-nano transfer technology to transfer the rare-earth gain material to the surface of each of the micro-optical resonators to form a rare-earth gain material layer on the surface of each of the micro-optical resonators.

[0012] A preparation method of a multi-wavelength laser chip provided by the present invention, wherein the micro-optical resonator includes one or more of a micro-ring shape and a micro-disk shape.

[0013] A preparation method of a multi-wavelength laser chip provided by the present invention, wherein the rare-earth gain material layer is composed of erbium compound nanomaterials.

[0014] The present invention provides a preparation method of a multi-wavelength laser chip, the method is used to manufacture the multi-wavelength laser chip as described above, and the method includes the following steps.

[0015] Generate a second substrate; wherein, the second substrate is transparent to light within the gain spectral band of the rare earth gain material and supports the direct growth of the rare earth gain material; on the second substrate, deposit a layer of rare earth gain material by chemical vapor deposition technology to form a rare earth gain material layer; use focused ion beam etching technology to etch multiple micro-optical resonators on the rare earth gain material layer; or use focused ion beam etching technology to jointly etch multiple micro-optical resonators on the rare earth gain material layer and the part of the second substrate adjacent to the rare earth gain material layer; wherein, among the multiple micro-optical resonators, the resonance mode of at least one micro-optical resonator is different from that of other micro-optical resonators.

[0016] According to a method for preparing a multi-wavelength laser chip provided by the present invention, the micro-optical resonator includes one or more of a micro-ring shape and a micro-disk shape.

[0017] According to a method for preparing a multi-wavelength laser chip provided by the present invention, the rare earth gain material layer is composed of erbium compound nanomaterials.

[0018] The present invention provides a laser unit, including:

[0019] A micro-optical resonator; a rare earth gain material layer coupled to the surface of the micro-optical resonator; wherein, the resonance mode of the micro-optical resonator matches the target wavelength in the optical gain spectrum of the rare earth gain material layer; wherein, when pump light irradiates the rare earth gain material layer, the rare earth gain material layer emits broadband fluorescence, and the fluorescence of the target wavelength in the broadband fluorescence is enhanced under the resonance and mode selection effects of the micro-optical resonator to generate laser light of the target wavelength.

[0020] The present invention provides a multi-wavelength photonic integrated device, including:

[0021] Multi-wavelength laser chip; wherein, the multi-wavelength laser chip includes a plurality of laser units, and each of the laser units includes: a micro-optical resonator; and a rare-earth gain material layer coupled to the surface of the micro-optical resonator; wherein, the resonance mode of the micro-optical resonator matches a preset wavelength in the optical gain spectrum line of the rare-earth gain material layer; wherein, among the micro-optical resonators included in the plurality of laser units, the resonance mode of at least one micro-optical resonator is different from that of other micro-optical resonators; wherein, when pump light irradiates the rare-earth gain material layer of any one of the laser units, the rare-earth gain material layer of the laser unit emits broadband fluorescence, and among the broadband fluorescence, the fluorescence of the preset wavelength that matches the resonance mode of the micro-optical resonator of the laser unit is enhanced under the resonance and mode selection effects of the micro-optical resonator of the laser unit to generate the laser of the preset wavelength; a photonic device, the photonic device is coupled and connected to one or more of the micro-optical resonators.

[0022] The multi-wavelength laser chip provided by the present invention includes a plurality of laser units, and each laser unit includes: a micro-optical resonator; a rare-earth gain material layer coupled to the surface of the micro-optical resonator; when pump light irradiates the rare-earth gain material layer of any one of the laser units, the electrons in the rare-earth gain material are excited to a high energy state and emit broadband fluorescence through the transition between energy levels. Among the broadband fluorescence, the fluorescence of the preset wavelength that matches the resonance mode of the micro-optical resonator of the laser unit is enhanced under the resonance and mode selection effects of the micro-optical resonator of the laser unit to generate the laser of the preset wavelength. Furthermore, the entire multi-wavelength laser chip can generate lasers of multiple wavelengths. Due to the utilization of the unique advantages of the micro-optical resonator, including high quality factor (Q value), high mode density, low threshold, low power consumption and miniaturization characteristics, and the integration of rare-earth gain materials with broadband gain, flexible tuning of multiple laser wavelengths can be achieved. In the 1.5 μm communication band, an integrated on-chip laser using rare-earth gain materials has been successfully developed. Thus, a high-performance and high-stability 1.5 μm multi-wavelength laser chip is provided. Brief Description of the Drawings

[0023] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the following drawings are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0024] Figure 1 It is a schematic structural diagram of the multi-wavelength laser chip provided by the present invention.

[0025] Figure 2It is a schematic diagram of the micro-ring structure in the multi-wavelength laser chip provided by the present invention.

[0026] Figure 3 It is one of the schematic flowcharts of the preparation method of the multi-wavelength laser chip provided by the present invention.

[0027] Figure 4 It is the second of the schematic flowcharts of the preparation method of the multi-wavelength laser chip provided by the present invention.

[0028] Figure 5 It is a schematic diagram of the coupling structure between the micro-ring and the waveguide in the multi-wavelength laser chip provided by the present invention.

[0029] Figure 6 It is a schematic diagram of the coupling structure between the micro-ring and the grating in the multi-wavelength laser chip provided by the present invention.

[0030] Figure 7 It is a schematic diagram of the micro-disk device after transferring the material provided by the present invention.

[0031] Figure 8 It is a schematic diagram of the micro-ring device after transferring the material provided by the present invention.

[0032] Figure 9 It is the erbium compound micro-disk prepared by direct etching provided by the present invention.

[0033] Figure 10 It is the luminescence photo of the erbium compound micro-disk provided by the present invention.

[0034] Reference signs:

[0035] 1: First laser unit; 11: Micro-disk-shaped micro-optical resonator; 12: First rare-earth gain material layer; 2: Second laser unit; 21: Micro-ring-shaped micro-optical resonator; 22: Second rare-earth gain material layer; 4: Optical waveguide; 5: Grating. Detailed implementation manners

[0036] To make the objectives, technical solutions and advantages of the present invention clearer, the technical solutions in the present invention will be clearly and completely described below with reference to the accompanying drawings in the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art without making creative efforts based on the embodiments in the present invention belong to the scope of protection of the present invention.

[0037] The following will be combined with Figure 1 Describe the multi-wavelength laser chip of the present invention.

[0038] Figure 1 It is a schematic diagram of the structure of the multi-wavelength laser chip provided by the present invention.

[0039] The multi-wavelength laser chip includes multiple laser units, and each laser unit includes: a micro-optical resonator; a rare-earth gain material layer coupled to the surface of the micro-optical resonator.

[0040] As Figure 1 shown, the multi-wavelength laser chip includes 2 laser units (only as an example, the multi-wavelength laser chip may include other numbers of laser units): the first laser unit 1 and the second laser unit 2. Among them, the first laser unit 1 includes a micro-disk-shaped micro-optical resonator 11 and a first rare-earth gain material layer 12 coupled to its surface. Among them, the second laser unit 2 includes a micro-ring-shaped micro-optical resonator 21 and a second rare-earth gain material layer 22 coupled to its surface.

[0041] As Figure 1 shown, the multi-wavelength laser chip further includes an optical waveguide 4 and a grating 5. The optical waveguide 4 and the grating 5 are used to implement the input function and output function of the multi-wavelength laser chip.

[0042] To more clearly show the structure of the laser unit, Figure 5 an SEM (Scanning Electron Microscope) photo of the coupling between the micro-ring cavity (micro-ring structure micro-optical resonator) of the laser unit and the optical waveguide is shown. Figure 6 An SEM photo of the grating coupler is shown.

[0043] The micro-optical resonator is an optical resonator, and its size is comparable to or close to the optical wavelength. This kind of resonator can realize the resonance and amplification of light waves in a small space and is an important part of micro-optical devices.

[0044] In the specific implementation process, the micro-optical resonator can have various structures and is not limited by the description in this specification. For example, the micro-optical resonator can be a micro-ring (as Figure 2 shown) or micro-disk-shaped.

[0045] In the specific implementation process, the rare-earth gain material layer can be composed of various rare-earth gain materials, including but not limited to: erbium compound nanoparticles, rare-earth compound nanowires, quantum dot quantum well materials that can emit light in the 1.5 μm band, perovskite materials, etc.

[0046] In some embodiments, the rare-earth gain material layer is composed of erbium compound nanomaterials.

[0047] The rare-earth gain material has broadband absorption and emission characteristics, can absorb and emit light in a relatively wide wavelength range, and provides a greater choice for different applications.

[0048] The resonance mode of the micro - optical resonator matches a preset wavelength in the optical gain spectrum of the rare - earth gain material layer.

[0049] The micro - optical resonator has specific resonance modes, which determine which wavelength of light can form a stable oscillation in the cavity. The wavelength of the resonance mode is related to the size, shape, and material of the cavity.

[0050] The rare - earth gain material has multiple gain bands (gain spectra) in the 1.5 µm band, and these gain bands correspond to the wavelengths of light that the material can absorb and amplify. The energy - level structure of rare - earth elements determines the position and width of these gain bands.

[0051] The preset wavelength is a wavelength selected from the gain spectrum of the rare - earth gain material according to the wavelength of the laser that the laser chip needs to generate. When the resonance mode of the micro - optical resonator matches a preset wavelength of the gain spectrum, the resonance effect of the micro - optical resonator will amplify the photons that match the preset wavelength.

[0052] In the specific implementation process, when the pump light irradiates the rare - earth gain material layer of any laser unit, the electrons in the rare - earth gain material are excited to the high - energy state and emit broadband fluorescence through the transition between energy levels. Among the broadband fluorescence, the fluorescence with the preset wavelength that matches the resonance mode of the micro - optical resonator of the laser unit is strengthened under the resonance and mode - selection effects of the micro - optical resonator of the laser unit to generate the laser with the preset wavelength. Among the micro - optical resonators included in multiple laser units, the resonance modes of at least one micro - optical resonator are different from those of other micro - optical resonators. Therefore, the pump light can excite multiple different wavelengths of lasers from the multi - wavelength laser chip.

[0053] In the specific implementation process, the multi - wavelength laser chip provided by the present invention can be used in a chip array. After being composed into a chip array, the power output of the laser can be significantly improved, and the application range of the laser can be broadened through flexible design.

[0054] The laser chip provided by the present invention, which includes a micro - optical resonator coupled with a rare - earth gain material layer, can perform input and output outside the chip through a waveguide and grating structure, realizing a core active device that can be integrated on the chip, fundamentally solving the key technical challenges that are urgently needed to be broken through for rare - earth gain material (such as erbium material) as an active device on a silicon - based substrate in the communication band, and effectively promoting the practical process of the device.

[0055] On the other hand, the present invention also provides a laser unit, including:

[0056] A micro - optical resonator; a rare - earth gain material layer coupled to the surface of the micro - optical resonator; wherein, the resonance mode of the micro - optical resonator matches the target wavelength in the optical gain spectrum of the rare - earth gain material layer.

[0057] Among them, when the pump light irradiates the rare earth gain material layer, the rare earth gain material layer emits broadband fluorescence. Under the resonance and mode selection effects of the micro-optical resonator, the fluorescence with the target wavelength in the broadband fluorescence is enhanced to generate laser with the target wavelength.

[0058] For the detailed descriptions of the micro-optical resonator and the rare earth gain material, please refer to Figure 1 the relevant content in [reference], which will not be elaborated here.

[0059] Next, the preparation method of the multi-wavelength laser chip of the present invention will be described in conjunction with Figures 3 - 4 to describe the preparation method of the multi-wavelength laser chip of the present invention.

[0060] Figure 3 FIG. [figure number] is one of the schematic flowcharts of the preparation method of the multi-wavelength laser chip provided by the present invention.

[0061] This method is used to manufacture a multi-wavelength laser chip as shown in Figure 1 As shown in Figure 3 This method includes the following steps.

[0062] Step 301: Generate a first substrate; wherein, the first substrate is transparent to light within the gain spectral band of the rare earth gain material.

[0063] In a specific implementation process, the first substrate can be realized based on various materials. For example, an SOI (Silicon-On-Insulator) substrate, a silicon substrate, or other material substrates that are transparent within the gain spectral band (1.5 µm band) of the rare earth gain material.

[0064] Step 302: Based on the first substrate, use micro-nano processing technology to etch to obtain a plurality of micro-optical resonators.

[0065] In some embodiments, the micro-optical resonator includes one or more of a micro-ring shape and a micro-disk shape.

[0066] Before processing the substrate, it is necessary to design the resonance mode of each micro-optical resonator to match one of the preset wavelengths in the optical gain spectrum of the rare earth gain material layer. For example, the resonance mode of the micro-optical resonator can be designed by determining the parameters of the micro-optical resonator, such as size, shape, or refractive index distribution, etc.

[0067] Among multiple micro - optical resonators, the resonance mode of at least one micro - optical resonator is different from that of other micro - optical resonators. For example, among multiple micro - optical resonators, the resonance mode of each micro - optical resonator is different. Another example is that among multiple micro - optical resonators, there is a part of micro - optical resonators whose resonance modes are the same as each other but different from those of the remaining micro - optical resonators.

[0068] Only as an example, an erbium - compound nanomaterial is selected to generate the rare - earth gain material layer of the micro - optical resonator. The erbium - compound nanomaterial exhibits a broad - spectrum gain characteristic in the 1.5 - µm band, and the range of its gain spectrum line is 1500 nm - 1580 nm. In order to make full use of the broad - spectrum gain characteristic of the erbium - compound nanomaterial in the 1.5 - µm band, the parameters of each micro - optical resonator (micro - disk or micro - ring) can be precisely designed to ensure that its resonance mode falls within the gain spectrum line range of the 1.5 - µm band, such as a series of equally - spaced modes like 1510 nm, 1520 nm, 1530 nm, etc. Finally, under the resonance and mode - selection effects of the cavity modes of the micro - optical resonator, a laser chip with multi - wavelength laser outputs corresponding to cavity - mode wavelengths of 1510 nm, 1520 nm, and 1530 nm, etc., can be formed.

[0069] According to the designed parameters, the process of fabricating the micro - optical resonator is as follows.

[0070] In a specific implementation process, a suitable substrate material, such as silicon, silicon nitride, or silicon dioxide, etc., can be selected as the first substrate, and the micro - optical resonator is fabricated using micro - nano processing technologies (for example, electron - beam lithography technology).

[0071] Before fabricating the micro - optical resonator, the first substrate needs to be pretreated to ensure its surface cleanliness and activity.

[0072] Then, the pattern of the micro - optical resonator is defined on the substrate through electron - beam lithography technology: First, the photoresist is uniformly spin - coated on the surface of the substrate to form a thin film. Then, using an electron - beam lithography machine, through precise control of the electron - beam scanning path and dose, the required pattern of the micro - optical resonator (such as a micro - disk cavity or a micro - ring cavity) is drawn on the surface of the photoresist. After exposure, the sample is immersed in a developer to remove the photoresist in the unexposed area, thus leaving the mask pattern of the micro - optical resonator.

[0073] Next, through reactive ion etching (RIE) or wet etching techniques, the portion of the substrate material that is not protected by the photoresist is removed, thereby forming the periodic structure of the micro-optical resonator. The etching process specifically includes: First, the developed sample (i.e., the micro-optical resonator material with a photoresist mask) is placed into a reactive ion etching device. Then, using plasma etching technology, the parts that are not covered and protected by the photoresist are removed to shape the periodic structure of the micro-optical resonator. During the etching process, commonly used etching gases include SF6 or CF4, and the etching rate and depth can be achieved by precisely controlling the etching time, power, and gas flow rate. For certain specific materials, such as silicon dioxide, hydrofluoric acid (HF) solution can also be selected for wet etching. After etching, the sample needs to be soaked in acetone or isopropyl alcohol to thoroughly remove the residual photoresist and ensure that the surface of the micro-optical resonator remains flat. In addition, to further improve its surface quality and adhesion, chemical treatment methods such as pickling and alkali washing can be used to remove the surface oxide layer and contaminants, or plasma treatment can be used to activate the surface and enhance its bonding ability with subsequent materials.

[0074] The micro-optical resonator fabricated based on a silicon substrate is an important local optical field microcavity structure. By fabricating a micro-optical resonator on a silicon-based substrate, strong localization and efficient coupling of the optical field can be achieved, thereby significantly improving the output efficiency and stability of the laser.

[0075] Step 303: Using the micro-nano transfer technology, transfer the rare-earth gain material onto the surface of each micro-optical resonator to form a rare-earth gain material layer on the surface of each micro-optical resonator.

[0076] For a detailed description of the rare-earth gain material, refer to Figure 1 the relevant content therein, which will not be elaborated here.

[0077] In some embodiments, the rare-earth gain material layer is composed of erbium compound nanomaterials.

[0078] In the specific implementation process, first, the rare-earth gain material (for example, erbium compound nanomaterials) needs to be generated.

[0079] Only as an example, for the growth of erbium compound nanomaterials, a suitable erbium compound precursor, such as erbium chloride or nitrate, is selected, and erbium compound nanosheets are synthesized by chemical vapor deposition at high temperature. By controlling the reaction conditions, such as temperature, gas flow, and reaction time, the crystallization quality of the nanosheets can be regulated to make the generated erbium compound nanomaterials have the best optical properties.

[0080] Then, select the high-quality rare-earth gain material with a flat and defect-free surface generated above as the starting material. Next, prepare a transfer medium, such as a polydimethylsiloxane (PDMS) film. Then, cover the surface of the rare-earth gain material with the PDMS film. Using a mechanical exfoliation technique, separate the two-dimensional rare-earth gain material from the original growth substrate. Subsequently, directly transfer the successfully exfoliated rare-earth gain material to a predetermined position on the micro-optical resonator. Finally, use the mechanical exfoliation method to remove the PDMS attached to the rare-earth gain material to ensure that the rare-earth gain material can achieve a tight and firm bond with the micro-optical resonator as the target substrate, forming a rare-earth gain material layer on the surface of the micro-optical resonator. Merely as an example, Figure 7 is a schematic diagram of the microdisk device after transferring the material, Figure 8 is a schematic diagram of the microring device after transferring the material.

[0081] Figure 4 is the second schematic flow diagram of the preparation method of the multi-wavelength laser chip provided by the present invention.

[0082] This method is used to manufacture a multi-wavelength laser chip as shown in Figure 1 and as shown in Figure 4 , this method includes the following steps.

[0083] Step 401, generate a second substrate; wherein, the second substrate is transparent to light within the gain spectral band of the rare-earth gain material and supports the direct growth of the rare-earth gain material.

[0084] In a specific implementation process, the second substrate can be realized based on various materials. For example, silicon, silicon nitride, lithium niobate, or other material substrates that are transparent to light within the gain spectral band of the rare-earth gain material (1.5 µm band) and support the direct growth of the rare-earth gain material.

[0085] Step 402, on the second substrate, use chemical vapor deposition technology to deposit a layer of rare-earth gain material to form a rare-earth gain material layer.

[0086] For a detailed description of the rare-earth gain material, refer to Figure 1 for the relevant content, which will not be elaborated here.

[0087] In some embodiments, the rare-earth gain material layer is composed of erbium compound nanomaterials.

[0088] In a specific implementation process, by precisely controlling the temperature, pressure, and gas flow rate, the uniform deposition and high-quality growth of the rare-earth gain material can be ensured to form a high-quality rare-earth gain material layer.

[0089] Step 403: Use focused ion beam etching technology to etch multiple micro-optical resonators on the rare earth gain material layer; or use focused ion beam etching technology to etch multiple micro-optical resonators on the rare earth gain material layer and the part of the second substrate adjacent to the rare earth gain material layer together.

[0090] In some embodiments, the micro-optical resonator includes one or more of a micro-ring shape and a micro-disk shape.

[0091] Among the multiple micro-optical resonators, the resonance mode of at least one micro-optical resonator is different from that of other micro-optical resonators.

[0092] Regarding the design of the resonance mode of the micro-optical resonator, refer to the relevant content in Figure 3 which will not be elaborated here.

[0093] Figure 9 The erbium compound micro-disk prepared by the above method is shown, where the rare earth gain material layer is composed of erbium compound, forming a micro-optical resonator with a micro-disk structure. Figure 10 The luminescence photo of the erbium compound micro-disk is shown. It can be seen from Figure 10 that the erbium compound micro-disk has characteristics such as a clear luminescence profile, uniform luminescence distribution, stable luminescence intensity and color, and rich luminescence details.

[0094] On the other hand, the present invention also provides a multi-wavelength photon integration device, including:

[0095] A multi-wavelength laser chip; wherein, the multi-wavelength laser chip includes multiple laser units, and each laser unit includes:

[0096] A micro-optical resonator; and a rare earth gain material layer coupled to the surface of the micro-optical resonator; wherein, the resonance mode of the micro-optical resonator matches a preset wavelength in the optical gain spectrum line of the rare earth gain material layer.

[0097] Among the micro-optical resonators included in the multiple laser units, the resonance mode of at least one micro-optical resonator is different from that of other micro-optical resonators.

[0098] Wherein, when the pump light irradiates the rare earth gain material layer of any laser unit, the rare earth gain material layer of the laser unit emits broadband fluorescence. Among the broadband fluorescence, the fluorescence with a preset wavelength matching the resonance mode of the micro-optical resonator of the laser unit is enhanced under the resonance and mode selection effects of the micro-optical resonator of the laser unit to generate laser with the preset wavelength.

[0099] A photon device, and the photon device is coupled and connected to one or more micro-optical resonators.

[0100] For a detailed description of the micro - optical resonator and the rare - earth gain material layer, refer to Figure 1 the relevant content in it, which will not be elaborated here.

[0101] Photonic devices may include, but are not limited to: waveguides, modulators, amplifiers, detectors, etc.

[0102] In the specific implementation process, according to different application scenarios, a photonic device can be coupled with one micro - optical resonator or multiple micro - optical resonators, not limited by the description in this specification.

[0103] The micro - optical resonator provided by the present invention can obtain multi - wavelength photonic integrated devices with different functions by being coupled with different types of photonic devices.

[0104] For example, when the photonic device is an optical waveguide, which is a basic element in photonic integration and is used to guide the propagation of light. After the micro - optical resonator is coupled and integrated with the optical waveguide, light can be coupled into the micro - optical resonator through the optical waveguide to achieve the resonance enhancement effect of the laser.

[0105] Another example is that when the photonic device is an optical amplifier, which is used to enhance the intensity of light. After the micro - optical resonator is integrated with the optical amplifier, the amplification of the laser signal can be realized, effectively improving the gain of the laser signal.

[0106] The multi - wavelength photonic integrated device provided by the present invention can realize a multi - functional on - chip integrated optical path and has broad application prospects in the fields of optical communication, on - chip optical interconnection, sensing, quantum information, etc.

[0107] The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they can be located in one place or distributed to multiple network units. Some or all of the modules can be selected according to actual needs to achieve the purpose of the solution of this embodiment. Those of ordinary skill in the art can understand and implement it without creative efforts.

[0108] Through the description of the above embodiments, those skilled in the art can clearly understand that each embodiment can be implemented by means of software plus a necessary general hardware platform, and of course, it can also be implemented by hardware. Based on such an understanding, the essence of the above technical solution, or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, magnetic disk, optical disk, etc., and includes several instructions to enable a computer device (which can be a personal computer, server, or network device, etc.) to execute the methods described in each embodiment or some parts of the embodiments.

[0109] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A laser unit, characterized in that, Comprising: A micro-optical resonator; wherein, the micro-optical resonator is in the shape of a micro-ring or a micro-disk; A rare-earth gain material layer coupled to the surface of the micro-optical resonator; wherein, the rare-earth gain material layer is composed of erbium compound nanomaterials; the erbium compound nanomaterials are synthesized by chemical vapor deposition at high temperature using an erbium compound precursor; Wherein, the erbium compound nanomaterials are separated from the growth substrate of the erbium compound nanomaterials by mechanical exfoliation and transferred to the surface of the micro-optical resonator, or the micro-optical resonator is etched on the growth substrate of the erbium compound nanomaterials; Wherein, the resonance mode of the micro-optical resonator matches the target wavelength in the optical gain spectrum line of the rare-earth gain material layer; Wherein, when pump light irradiates the rare-earth gain material layer, the rare-earth gain material layer emits broadband fluorescence, and the fluorescence of the target wavelength in the broadband fluorescence is enhanced by the resonance and mode selection of the micro-optical resonator to generate the laser of the target wavelength.

2. A multi-wavelength laser chip, characterized in that, Comprising: A plurality of laser units, each of the laser units comprising: A micro-optical resonator; wherein, the micro-optical resonator is in the shape of a micro-ring or a micro-disk; A rare-earth gain material layer coupled to the surface of the micro-optical resonator; wherein, the rare-earth gain material layer is composed of erbium compound nanomaterials; the erbium compound nanomaterials are synthesized by chemical vapor deposition at high temperature using an erbium compound precursor; Wherein, the erbium compound nanomaterials are separated from the growth substrate of the erbium compound nanomaterials by mechanical exfoliation and transferred to the surface of the micro-optical resonator, or the micro-optical resonator is etched on the growth substrate of the erbium compound nanomaterials; Wherein, the resonance mode of the micro-optical resonator matches a preset wavelength in the optical gain spectrum line of the rare-earth gain material layer; Wherein, among the micro-optical resonators included in the plurality of laser units, the resonance mode of at least one micro-optical resonator is different from that of other micro-optical resonators; Wherein, when pump light irradiates the rare-earth gain material layer of any one of the laser units, the rare-earth gain material layer of the laser unit emits broadband fluorescence, and the fluorescence of the preset wavelength that matches the resonance mode of the micro-optical resonator of the laser unit is enhanced by the resonance and mode selection of the micro-optical resonator of the laser unit to generate the laser of the preset wavelength.

3. A method for preparing a multi-wavelength laser chip, characterized in that, The method is used to manufacture the multi-wavelength laser chip as claimed in claim 2, and the method comprises: Generating a first substrate; wherein, the first substrate is transparent to light in the gain spectrum band of the rare-earth gain material; Based on the first substrate, using micro-nano processing technology, etching to obtain a plurality of micro-optical resonators; wherein, among the plurality of micro-optical resonators, the resonance mode of at least one micro-optical resonator is different from that of other micro-optical resonators; Using micro-nano transfer technology, transfer the rare-earth gain material to the surface of each of the micro-optical resonators, and form a rare-earth gain material layer on the surface of each of the micro-optical resonators.

4. The preparation method of the multi-wavelength laser chip according to claim 3, characterized in that The micro-optical resonator includes one or more of a micro-ring shape and a micro-disk shape.

5. The method for preparing a multi-wavelength laser chip according to claim 3 or 4, characterized in that, The rare-earth gain material layer is composed of erbium compound nanomaterials.

6. A method for preparing a multi-wavelength laser chip, characterized in that, The method is used to manufacture the multi-wavelength laser chip as described in claim 2, and the method includes: Generate a second substrate; wherein, the second substrate is transparent to light within the gain spectral band of the rare-earth gain material and supports the direct growth of the rare-earth gain material; On the second substrate, use chemical vapor deposition technology to deposit a layer of rare-earth gain material to form a rare-earth gain material layer; Use focused ion beam etching technology to etch a plurality of micro-optical resonators on the rare-earth gain material layer; or Use focused ion beam etching technology to jointly etch a plurality of micro-optical resonators on the rare-earth gain material layer and the part of the second substrate adjacent to the rare-earth gain material layer; wherein, among the plurality of micro-optical resonators, the resonance mode of at least one micro-optical resonator is different from that of other micro-optical resonators.

7. The preparation method of the multi-wavelength laser chip according to claim 6, wherein, The micro-optical resonator includes one or more of a micro-ring shape and a micro-disk shape.

8. The method for preparing a multi-wavelength laser chip according to claim 6 or 7, characterized in that, The rare-earth gain material layer is composed of erbium compound nanomaterials.

9. A multi-wavelength photon integrated device, characterized in that Including: A multi-wavelength laser chip; wherein, the multi-wavelength laser chip includes a plurality of laser units, and each of the laser units includes: A micro-optical resonator; wherein, the micro-optical resonator is in a micro-ring shape or a micro-disk shape; A rare-earth gain material layer coupled to the surface of the micro-optical resonator; wherein, the rare-earth gain material layer is composed of erbium compound nanomaterials; the erbium compound nanomaterials are synthesized by chemical vapor deposition method at high temperature using an erbium compound precursor; Wherein, the erbium compound nanomaterials are separated from the growth substrate of the erbium compound nanomaterials by a mechanical peeling method and transferred to the surface of the micro-optical resonator, or the micro-optical resonator is etched on the growth substrate of the erbium compound nanomaterials; Wherein, the resonance mode of the micro-optical resonator matches a preset wavelength in the optical gain spectrum of the rare-earth gain material layer; Wherein, among the micro-optical resonators included in the plurality of laser units, the resonance mode of at least one micro-optical resonator is different from that of other micro-optical resonators; Wherein, when pump light irradiates the rare-earth gain material layer of any one of the laser units, the rare-earth gain material layer of the laser unit emits broadband fluorescence, and among the broadband fluorescence, the fluorescence of the preset wavelength that matches the resonance mode of the micro-optical resonator of the laser unit is enhanced under the resonance and mode selection effects of the micro-optical resonator of the laser unit to generate the laser of the preset wavelength; A photonic device, the photonic device is coupled and connected to one or more of the micro-optical resonators.

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