Semiconductor laser element provided with quantum confinement stark regulation and control layer

Abstract

The semiconductor laser element sequentially comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer from bottom to top, and the quantum limiting stark regulation and control layer is arranged between the active layer and the lower waveguide layer. The electric field distribution of the active layer is regulated and controlled, domain wall motion is induced to be generated, the quantum limited stark effect and InN phase separation of the active layer are inhibited, the interface quality is improved, and the non-radiative recombination center is reduced; light field limitation and limiting factors are enhanced, and the light power of the laser is improved; the quantum confinement stark regulation and control layer generates lattice displacement to induce phase change, improves mutual solution gaps of InN and GaN, inhibits InN segregation of the active layer and the waveguide layer, reduces In component fluctuation, reduces thermal degradation, improves interface crystal quality and thermal stability, reduces a non-radiative recombination center, and improves laser power and slope efficiency.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a semiconductor laser element provided with a quantum confined Stark control layer. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse, mainly including solid, gas, liquid, semiconductor and dye types of lasers; compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes. 1) Lasers are generated by stimulated radiation from carriers, with a small half-width spectrum and high brightness. The output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes emit spontaneous radiation, and the output power of a single light-emitting diode is in the mW level. 2) The current density of the laser is as high as KA / cm 2 , which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect; 3) Light-emitting diodes spontaneously radiate incoherent light from high energy levels to low energy levels without external effects, while lasers radiate stimulated transitions. The energy of induced photons should be equal to the difference in energy levels of electron transitions, generating photons and induced photons that are completely coherent light; 4) Different principles: light-emitting diodes produce radiation recombination and luminescence under the action of external voltage when electron holes transition to quantum wells or pn junctions, while lasers require lasing conditions to be met before they can be lased. The carrier inversion distribution in the active region must be met. The stimulated radiation light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light. The threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0004] Nitride semiconductor lasers have the following problems: 1. The lattice mismatch and large strain of the active layer induce a strong piezoelectric polarization effect, resulting in a strong QCSE quantum confined Stark effect, an increase in the valence band step difference of the laser, more difficult hole transport in the quantum well, uneven carrier injection, and uneven gain, which limits the improvement of the laser's electro-lasing gain; 2. The Mg acceptor activation energy of the p-type semiconductor is large, the ionization efficiency is low, the hole concentration is much lower than the electron concentration, the hole mobility is much lower than the electron mobility, and the quantum well polarization electric field increases the hole injection barrier, the holes overflow the active layer, and other problems. The uneven hole injection and low efficiency lead to serious asymmetric mismatch between electrons and holes in the quantum well, electron leakage and carrier desorption. Localization makes it more difficult for holes to transport in the quantum well, carrier injection is uneven, gain is uneven, and at the same time, the laser gain spectrum becomes wider and the peak gain decreases, resulting in an increase in the laser threshold current and a decrease in slope efficiency; 3. An increase in the In component of the quantum well will produce In component fluctuations and strain, the laser gain spectrum becomes wider, and the peak gain decreases; an increase in the In component of the quantum well will cause poor thermal stability, and the growth of high-temperature p-type semiconductors and confinement layers will cause thermal degradation of the active layer, reducing the quality of the active layer and the interface quality; the active layer has a high internal defect density, a large mutual dissolution gap between InN and GaN, InN phase separation and segregation, thermal degradation, and unsatisfactory crystal quality, resulting in unsatisfactory quantum well quality and interface quality, and an increase in non-radiative recombination centers. Summary of the invention

[0005] The present invention provides a semiconductor laser element provided with a quantum confined Stark control layer, which solves the problems existing in the prior art.

[0006] The present invention provides a semiconductor laser element with a quantum confined Stark control layer, which comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer. A quantum confined Stark control layer is arranged between the active layer and the lower waveguide layer. The quantum confined Stark control layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, ZrW2O8, ScF3, CoSe2, Fe3C, LaCu3Fe4O 12 , any one or any combination of Yb8Ge3Sb5.

[0007] Preferably, the electron affinity energy distribution of the quantum confined Stark control layer has a function y=A+B*x2 +C*e x Curve shape distribution, wherein A, B, and C are arbitrary values; the electron affinity of the quantum confined Stark control layer ≤ the electron affinity of the lower waveguide layer ≤ the electron affinity of the active layer.

[0008] Preferably, the refractive index coefficient distribution of the quantum confined Stark control layer has a function y=D+E*x 2 +F*sinx curve shape distribution, where D, E, and F are arbitrary values; the refractive index of the quantum confined Stark control layer ≤ the refractive index of the lower waveguide layer ≤ the refractive index of the active layer.

[0009] Preferably, the elastic coefficient distribution of the quantum confined Stark control layer has a function y=G+H*e x The shape of the sinx curve is distributed, wherein G and H are arbitrary values; the elastic coefficient of the active layer is ≤ the elastic coefficient of the lower waveguide layer ≤ the elastic coefficient of the quantum confined Stark control layer.

[0010] Preferably, the spontaneous polarization coefficient distribution of the quantum confined Stark control layer has a function y=I+J*e x The shape of the cosx curve is distributed, wherein I and J are arbitrary values; the spontaneous polarization coefficient of the active layer is ≤ the spontaneous polarization coefficient of the lower waveguide layer ≤ the spontaneous polarization coefficient of the quantum confined Stark control layer.

[0011] Preferably, the In element distribution of the quantum confined Stark control layer has a function y=K+L*x 2 +e x Curve shape distribution, wherein K and L are arbitrary values; the In element concentration of the quantum confined Stark control layer ≤ the In element concentration of the lower waveguide layer ≤ the In element concentration of the active layer.

[0012] Preferably, the In / C element ratio distribution of the quantum confined Stark control layer has a function y=M+N*x 2 +V*e x Curve shape distribution, wherein M, N, and V are arbitrary values; the In / C element ratio of the quantum confined Stark control layer ≤ the In / C element ratio of the lower waveguide layer ≤ the In / C element ratio of the active layer.

[0013] Preferably, the In / H element ratio distribution of the quantum confined Stark control layer has a function y=R+P*x 2 +Q*e x Curve shape distribution; the In / H element ratio of the quantum confined Stark control layer ≤ the In / H element ratio of the lower waveguide layer ≤ the In / H element ratio of the active layer; the In / O element ratio distribution of the quantum confined Stark control layer has a function y=S+T*x2 +U*e x Curve shape distribution, wherein R, P, Q, S, T, and U are arbitrary values; the In / O element ratio of the quantum confined Stark control layer is ≤ the In / O element ratio of the lower waveguide layer ≤ the In / O element ratio of the active layer.

[0014] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN or Any combination, with a thickness of 10 to 120 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 200 angstroms.

[0015] Preferably, the lower limiting layer, the lower waveguide layer, the upper waveguide layer, and the upper limiting layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0016] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN xAny one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0017] Compared with the prior art, the semiconductor laser element provided with a quantum confined Stark control layer provided in an embodiment of the present invention has the following beneficial effects: the quantum confined Stark control layer controls the electric field distribution of the active layer, induces domain wall motion, suppresses the quantum confined Stark effect and InN phase separation of the active layer, improves interface quality, and reduces non-radiative recombination centers; the quantum confined Stark control layer controls the light field distribution of the active layer, enhances light field confinement and confinement factor, and improves the optical power of the laser; the quantum confined Stark control layer generates a lattice displacement-induced phase change, improves the mutual solubility gap between InN and GaN, suppresses InN segregation in the active layer and the waveguide layer, reduces In component fluctuations, reduces thermal degradation, improves interface crystal quality and thermal stability, reduces non-radiative recombination centers, and improves laser power and slope efficiency; the The quantum confined Stark control layer generates an iron-valley coupling effect to control the strain field and polarization direction flipping, modulate the piezoelectric polarization and spontaneous polarization field of the laser, reduce the quantum confined Stark effect, reduce the valence band order of the laser element, improve the uniformity of hole injection and the uniformity of laser gain, improve the overlap probability of the electron-hole wave function of the laser active layer, enhance the stimulated radiation of the laser element, reduce the excitation threshold of the laser element, enhance the confinement factor, and improve the peak gain of the laser element; the quantum confined Stark control layer controls the interface state through the In content and the C, H, O element concentration and distribution at the active layer interface, thereby controlling the polarization electric field and distribution of the quantum confined Stark control layer, reducing the hole injection barrier and electron overflow, improving the hole injection uniformity and the electron-hole matching, and thereby improving the slope efficiency and optical power of the laser. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 A schematic structural diagram of a semiconductor laser element provided with a quantum confined Stark control layer provided by the present invention.

[0019] Figure 2 A SIMS secondary ion mass spectrum of a semiconductor laser element provided with a quantum confined Stark control layer provided by the present invention.

[0020] In the figure, markings are as follows: 100: substrate; 101: lower confinement layer; 102: lower waveguide layer; 103: active layer; 104: upper waveguide layer, 105: upper confinement layer, 106: quantum confined Stark control layer. DETAILED DESCRIPTION

[0021] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0022] In order to solve the above problems, a semiconductor laser element provided with a quantum confined Stark control layer provided in an embodiment of the present application will be introduced and explained in detail through the following specific embodiments.

[0023] Reference Figure 1-2 The present invention provides a semiconductor laser element with a quantum confined Stark control layer, which includes, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105. A quantum confined Stark control layer 106 is provided between the active layer 103 and the lower waveguide layer 102. The quantum confined Stark control layer 106 is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, I nAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, ZrW2O8, ScF3, CoSe2, Fe3C, LaCu3Fe4O 12 , any one or any combination of Yb8Ge3Sb5.

[0024] The electron affinity energy distribution of the quantum confined Stark control layer 106 has a function y=A+B*x 2 +C*e x The shape of the curve is distributed, wherein A, B, and C are arbitrary values; the electron affinity of the quantum confined Stark control layer 106 is ≤ the electron affinity of the lower waveguide layer 102 ≤ the electron affinity of the active layer 103, thereby controlling the electric field distribution of the active layer, inducing domain wall motion, suppressing the quantum confined Stark effect and InN phase separation of the active layer, improving the interface quality, and reducing non-radiative recombination centers.

[0025] The refractive index distribution of the quantum confined Stark control layer 106 has a function y=D+E*x 2+F*sinx curve shape distribution, where D, E, and F are arbitrary values; the refractive index of the quantum confined Stark control layer 106 is ≤ the refractive index of the lower waveguide layer 102 ≤ the refractive index of the active layer 103, thereby regulating the light field distribution of the active layer, enhancing the light field confinement and confinement factor, and improving the optical power of the laser.

[0026] The elastic coefficient distribution of the quantum confined Stark control layer 106 has a function y=G+H*e x The shape of the sinx curve is distributed, wherein G and H are arbitrary values; the elastic coefficient of the active layer 103 is ≤ the elastic coefficient of the lower waveguide layer 102 ≤ the elastic coefficient of the quantum confined Stark control layer 106, thereby generating a lattice displacement induced phase change, improving the mutual solubility gap between InN and GaN, suppressing the InN segregation of the active layer and the waveguide layer, reducing In component fluctuations, reducing thermal degradation, improving the interface crystal quality and thermal stability, reducing non-radiative recombination centers, and improving laser power and slope efficiency.

[0027] The spontaneous polarization coefficient distribution of the quantum confined Stark control layer 106 has a function y=I+J*e x The shape of the cosx curve is distributed, wherein I and J are arbitrary values; the spontaneous polarization coefficient of the active layer 103 is ≤ the spontaneous polarization coefficient of the lower waveguide layer 102 ≤ the spontaneous polarization coefficient of the quantum confined Stark control layer 106, thereby generating an iron valley coupling effect to control the strain field and polarization direction flipping, modulate the piezoelectric polarization and spontaneous polarization field of the laser, reduce the quantum confined Stark effect, reduce the valence band order of the laser element, improve the uniformity of hole injection and the uniformity of laser gain, improve the overlap probability of the electron-hole wave function of the laser active layer, enhance the stimulated radiation of the laser element, reduce the excitation threshold of the laser element, enhance the limitation factor, and improve the peak gain of the laser element.

[0028] The In element distribution of the quantum confined Stark control layer 106 has a function y=K+L*x 2 +e x The curve shape distribution, where K and L are arbitrary values; the In element concentration of the quantum confined Stark control layer 106 ≤ the In element concentration of the lower waveguide layer 102 ≤ the In element concentration of the active layer 103. The In / C element ratio distribution of the quantum confined Stark control layer 106 has a function y=M+N*x 2 +V*e x The curve shape distribution, where M, N, and V are arbitrary values; the In / C element ratio of the quantum confined Stark control layer 106 ≤ the In / C element ratio of the lower waveguide layer 102 ≤ the In / C element ratio of the active layer 103. The In / H element ratio distribution of the quantum confined Stark control layer 106 has a function y=R+P*x 2 +Q*ex Curve shape distribution; the In / H element ratio of the quantum confined Stark control layer 106 ≤ the In / H element ratio of the lower waveguide layer 102 ≤ the In / H element ratio of the active layer 103; the In / O element ratio distribution of the quantum confined Stark control layer 106 has a function y=S+T*x 2 +U*e x Curve shape distribution, where R, P, Q, S, T, and U are arbitrary values; the In / O element ratio of the quantum confined Stark control layer 106 is ≤ the In / O element ratio of the lower waveguide layer 102 ≤ the In / O element ratio of the active layer 103. The interface state is regulated by the In content and the C, H, and O element concentrations and distribution at the active layer interface, thereby regulating the polarization electric field and distribution of the quantum confined Stark control layer, reducing the hole injection barrier and electron overflow, improving the hole injection uniformity and electron-hole matching, and thereby improving the slope efficiency and optical power of the laser.

[0029] The specific data are shown in the following table, which compares the data of the traditional laser and the laser of the present invention.

[0030] Blue Laser Project Conventional laser Laser of the present invention Range of change Slope efficiency (W / A) 0.8 1.47 84％ <![CDATA[Threshold current density (kA / cm 2 )]]> 2.4 0.64 -73％ Optical power(W) 5.2 14.2 173％ Limiting Factor 1.40％ 7.16％ 411％

[0031] In the present invention, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN. The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 200 angstroms.

[0032] In the present invention, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0033] In the present invention, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0034] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the technical principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A semiconductor laser element provided with a quantum confined Stark control layer, comprising, from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), and an upper confinement layer (105), characterized in that: A quantum confined Stark control layer (106) is provided between the active layer (103) and the lower waveguide layer (102), and the quantum confined Stark control layer (106) is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, ZrW2O8, ScF3, CoSe2, Fe3C, LaCu3Fe4O 12 , any one or any combination of Yb8Ge3Sb5.

2. The semiconductor laser element with a quantum confined Stark control layer according to claim 1, characterized in that: The electron affinity energy distribution of the quantum confined Stark control layer (106) has a function y=A+B*x 2 +C*e x The curve shape distribution, wherein A, B, and C are arbitrary values; the electron affinity of the quantum confined Stark control layer (106) is ≤ the electron affinity of the lower waveguide layer (102) ≤ the electron affinity of the active layer (103).

3. The semiconductor laser element with a quantum confined Stark control layer according to claim 1, characterized in that: The refractive index coefficient distribution of the quantum confined Stark control layer (106) has a function y=D+E*x 2 +F*sinx curve shape distribution, wherein D, E, and F are arbitrary values; the refractive index of the quantum confined Stark control layer (106) is ≤ the refractive index of the lower waveguide layer (102) ≤ the refractive index of the active layer (103).

4. The semiconductor laser element with a quantum confined Stark control layer according to claim 1, characterized in that: The elastic coefficient distribution of the quantum confined Stark control layer (106) has a function y=G+H*e x The shape of the sinx curve is distributed, wherein G and H are arbitrary values; the elastic coefficient of the active layer (103) is ≤ the elastic coefficient of the lower waveguide layer (102) ≤ the elastic coefficient of the quantum confined Stark control layer (106).

5. The semiconductor laser element with a quantum confined Stark control layer according to claim 1, characterized in that: The spontaneous polarization coefficient distribution of the quantum confined Stark control layer (106) has a function y=I+J*e x The cosx curve shape is distributed, wherein I and J are arbitrary values; the spontaneous polarization coefficient of the active layer (103) is ≤ the spontaneous polarization coefficient of the lower waveguide layer (102) ≤ the spontaneous polarization coefficient of the quantum confined Stark control layer (106).

6. The semiconductor laser element with a quantum confined Stark control layer according to claim 1, characterized in that: The In element distribution of the quantum confined Stark control layer (106) has a function y=K+L*x 2 +e x The curve shape distribution, wherein K and L are arbitrary values; the In element concentration of the quantum confined Stark control layer (106) is ≤ the In element concentration of the lower waveguide layer (102) ≤ the In element concentration of the active layer (103).

7. The semiconductor laser element with a quantum confined Stark control layer according to claim 1, characterized in that: The In / C element ratio distribution of the quantum confined Stark control layer (106) has a function y=M+N*x 2 +V*e x The curve shape distribution, wherein M, N, and V are arbitrary values; the In / C element ratio of the quantum confined Stark control layer (106) is ≤ the In / C element ratio of the lower waveguide layer (102) ≤ the In / C element ratio of the active layer (103).

8. A semiconductor laser element with a quantum confined Stark control layer according to any one of claim 1, characterized in that: The In / H element ratio distribution of the quantum confined Stark control layer (106) has a function y=R+P*x 2 +Q*e x The curve shape distribution; the In / H element ratio of the quantum confined Stark control layer (106) is ≤ the In / H element ratio of the lower waveguide layer (102) ≤ the In / H element ratio of the active layer (103); the In / O element ratio distribution of the quantum confined Stark control layer (106) has a function y=S+T*x 2 +U*e x A curve shape distribution, wherein R, P, Q, S, T, and U are arbitrary values; the In / O element ratio of the quantum confined Stark control layer (106) is ≤ the In / O element ratio of the lower waveguide layer (102) ≤ the In / O element ratio of the active layer (103).

9. The semiconductor laser element with a quantum confined Stark control layer according to claim 1, characterized in that: The active layer (103) is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN or Any combination, with a thickness of 10 to 120 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 200 angstroms.

10. The semiconductor laser element with a quantum confined Stark control layer according to claim 1, characterized in that: The lower confinement layer (101), the lower waveguide layer (102), the upper waveguide layer (104), and the upper confinement layer (105) are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

11. The semiconductor laser element with a quantum confined Stark control layer according to claim 1, characterized in that: The substrate (100) includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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