Novel polycrystalline silicon thin film structure for field effect passivation of crystalline silicon cell and PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment
By adopting the new polycrystalline silicon thin film structure and PECVD equipment design in crystalline silicon photovoltaic cells, the problems of carrier concentration gradient distribution and uneven heating of pallets are solved, and the effect of improving the efficiency and stability of photovoltaic cells is achieved.
Patent Information
- Application Number
- CN202411784561.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-06
- Publication Date
- 2025-03-21
- Estimated Expiration
- 2044-12-06
AI Technical Summary
In traditional crystalline silicon photovoltaic cells, due to the limitations of the doping process, the carrier concentration gradient distribution increases the recombination loss, which reduces the photoelectric conversion efficiency, and at the same time, the uneven heating of the pallet affects the process stability.
A new polycrystalline silicon thin film structure is adopted, including two low-concentration doped regions and two high-concentration doped regions, which are stacked layer by layer by layer by PECVD technology and annealed to form a high net charge region to enhance the field effect passivation effect. At the same time, the PECVD equipment is designed to disperse the heat of the heating element and the spoiler opening and closing parts to intermittently mix the coolant to achieve uniformity of the heating of the tray.
The efficiency and stability of crystalline silicon photovoltaic cells are improved, and the recombination loss and temperature unevenness problems are reduced by enhancing the field effect passivation and uniform heating.