Chemical mechanical polishing device

Abstract

The invention provides a chemical mechanical grinding device which comprises a polishing assembly, a baffle plate, a table top and a cleaning assembly, the polishing assembly and the baffle plate are arranged on the table top, and the baffle plate surrounds the polishing assembly; the cleaning assembly comprises nozzles, the nozzles are arranged on the table top and located outside the shielding plate, the number of the nozzles is multiple, all the nozzles are arranged in the circumferential direction of the shielding plate at intervals, and the spraying range of the nozzles covers the shielding plate and at least part of the target assembly. According to the device, the baffle plate and the target assembly can be cleaned through the nozzles, slurry on the baffle plate and the target assembly is prevented from falling on the polishing assembly after being crystallized, the risk that technological defects are generated on the surface of the wafer is reduced, and the product yield of the wafer is effectively guaranteed.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a chemical mechanical polishing device. Background Art

[0002] Chemical Mechanical Polishing (CMP) is a technology that uses a combination of chemistry and mechanics to flatten the surface of a wafer. Chemical Mechanical Polishing is often used in wafer processing to grind and polish the surface of a wafer. Specifically, the wafer and polishing pad are mechanically ground, and different types of slurries react chemically with the surface of the wafer to flatten the insulating layer between the electrical structures of a semiconductor device or remove the layers of a semiconductor device.

[0003] The CMP process uses a polishing head with a wafer, and a platen with a polishing pad attached is placed under the polishing head. During the grinding process, the wafer is pressed onto the polishing pad by the polishing head, and the polishing head and the platen are rotated at high speeds, while the slurry is sprayed onto the polishing pad through the slurry nozzle. The slurry contacts the surface of the wafer and produces a chemical reaction, so that the wafer is polished under the dual effects of mechanical and chemical.

[0004] During the actual use of the chemical mechanical polishing device, the slurry will splash onto the shield and surrounding components outside the pressure plate. Although the equipment is maintained (PM) before each use to clean the slurry on the shield and surrounding components, if the equipment is idle (Idle) for a long time, the slurry will crystallize, increasing the difficulty of cleaning. At the same time, the slurry is more likely to fall onto the polishing pad after crystallization, which will cause redundant particles (Particles) and scratches (Scratch) on the surface of the wafer, resulting in process defects (Defect) on the surface of the wafer. Summary of the invention

[0005] In order to solve the technical problems in the prior art, the purpose of the present invention is to provide a chemical mechanical polishing device, which can clean the baffle plate and the target component through a nozzle to prevent the slurry on the baffle plate and the target component from crystallizing and falling onto the polishing component, thereby reducing the risk of process defects on the wafer surface and effectively ensuring the product yield of the wafer.

[0006] To achieve the above-mentioned objectives, the present invention provides a chemical mechanical polishing device, comprising: a polishing assembly, a baffle plate, a table and a cleaning assembly, wherein the polishing assembly and the baffle plate are arranged on the table, and the baffle plate surrounds the polishing assembly; the cleaning assembly comprises a nozzle, and the nozzle is arranged on the table and located outside the baffle plate. There are multiple nozzles, and all of the nozzles are arranged at intervals along the circumference of the baffle plate. The spray range of the nozzle covers the baffle plate and at least part of the target component.

[0007] Optionally, the nozzle is adjacent to the shielding plate and is located below the upper edge of the shielding plate; the nozzle is used to spray deionized water to clean the shielding plate and at least part of the target component.

[0008] Optionally, the nozzle is used to spray the cleaning liquid toward the top of the baffle plate to clean the inner wall of the baffle plate.

[0009] Optionally, the number of the nozzles is not less than 10, and the spacing between adjacent nozzles is 8 cm to 16 cm.

[0010] Optionally, the target component further includes a slurry delivery component, wherein the slurry delivery component extends from the outside of the baffle plate to above the polishing component, and the spraying range of the nozzle also covers at least a portion of the slurry delivery component.

[0011] Optionally, the cleaning component further includes a cleaning pipeline, which is connected to each of the nozzles; the slurry delivery component includes a deionized water pipeline, which is connected to the cleaning pipeline, and the deionized water pipeline is used to provide deionized water to the cleaning pipeline.

[0012] Optionally, the cleaning pipeline forms a loop and surrounds the baffle plate, and all the nozzles are arranged on the loop at intervals and are respectively connected to the loop.

[0013] Optionally, the target component further includes a baffle plate driving component, which is disposed outside the baffle plate and is used to drive the baffle plate to move in a vertical direction, and the spraying range of the nozzle also covers at least a portion of the baffle plate driving component.

[0014] Optionally, the polishing assembly includes a polishing table and a polishing head, the polishing table is provided with a polishing pad, the polishing head is arranged above the polishing pad and is used for adsorbing the wafer; the cleaning assembly is used to start cleaning after the polishing of the wafer is completed.

[0015] Optionally, the target component further includes a polishing pad adjustment component, and the polishing pad adjustment component is arranged outside the baffle; the spraying range of the nozzle also covers at least a portion of the polishing pad adjustment component.

[0016] The present application provides a chemical mechanical polishing device, which is provided with a plurality of nozzles on the table, and the nozzles can spray cleaning liquid to clean the shielding plate and the surrounding target components. With such a configuration, on the one hand, the residual slurry on the shielding plate and the target component can be effectively removed by the cleaning liquid, so as to prevent the slurry from forming crystals and falling onto the polishing component, thereby causing redundant particles and scratches on the surface of the wafer, reducing the risk of process defects on the wafer, and effectively ensuring the product yield of the wafer; on the other hand, it can also avoid cleaning the slurry crystals, reduce the difficulty of cleaning the shielding plate and the target component, and reduce the cleaning time, thereby improving the equipment maintenance efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 A schematic diagram of the structure of a chemical mechanical polishing device in a preferred embodiment of the present invention;

[0018] Figure 2 This is a schematic diagram of a usage scenario of a nozzle and a cleaning pipeline in a preferred embodiment of the present invention.

[0019] The reference numerals are described as follows:

[0020] Cleaning assembly 1; nozzle 11; cleaning pipeline 12; loop 13; polishing assembly 2; polishing head 21; polishing pad 22; baffle 3; table 4; slurry delivery assembly 5; deionized water pipeline 51; slurry pipeline 52; baffle drive assembly 6; polishing pad adjustment assembly 7. DETAILED DESCRIPTION

[0021] The present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the accompanying drawings are in very simplified form and in non-precise proportions, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention.

[0022] The orientation or position relationship indicated by the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like are based on the orientation or position relationship shown in the drawings and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred mechanism or element must have a specific orientation, be constructed and operate in a specific orientation, and therefore should not be understood as limiting the present invention.

[0023] In the present invention, unless otherwise clearly specified and limited, the terms "installation", "connection", "fixation" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral one; it can be a mechanical connection, an electrical connection, or communication with each other; it can be a direct connection, or a connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0024] Furthermore, those skilled in the art may combine and associate different embodiments or examples and features of different embodiments or examples described in this specification without mutual contradiction.

[0025] To solve the above problems, refer to Figure 1 and Figure 2 As shown, a preferred embodiment of the present application provides a chemical mechanical polishing device, including: a cleaning component 1, a polishing component 2, a baffle plate 3 and a table 4, the polishing component 2 and the baffle plate 3 are arranged on the table 4, and the baffle plate 3 is arranged around the polishing component 2. The cleaning component 1 includes a nozzle 11 (Nozzle), and the nozzle 11 is arranged on the table 4 and is located outside the baffle plate 3. There are multiple nozzles 11, and all nozzles 11 are arranged at intervals along the circumference of the baffle plate 3. The spray range of the nozzle 11 covers the baffle plate 3 and at least part of the target component. Providing multiple nozzles 11 can enhance the cleaning effect of the nozzle 11, so as to clean the baffle plate 3 and at least part of the surrounding target components as a whole.

[0026] In more detail, the shielding plate 3 is arranged in the direction of the slurry being thrown out, which can protect the polishing component 2 from external contamination and can shield the slurry splashed during the wafer polishing process to prevent the slurry from splashing onto the target component in large quantities. The nozzle 11 is used to spray the cleaning liquid to clean the shielding plate 3 and at least part of the target component.

[0027] The present application provides a chemical mechanical polishing device, which is provided with a plurality of nozzles 11 on a table 4, and the nozzles 11 can spray cleaning liquid to clean the shielding plate 3 and the surrounding target components. With such a configuration, on the one hand, the residual slurry on the shielding plate 3 and the target component can be effectively removed by the cleaning liquid, so as to prevent the slurry from forming crystals and falling onto the polishing component 2, thereby causing redundant particles and scratches on the surface of the wafer, reducing the risk of process defects on the wafer, and effectively ensuring the product yield of the wafer; on the other hand, it can also avoid cleaning the slurry crystals, reduce the difficulty of cleaning the shielding plate 3 and the target component, and reduce the cleaning time, thereby improving the equipment maintenance efficiency.

[0028] Continue to refer to Figure 1As shown, the polishing assembly 2 includes a polishing table and a polishing head 21. The polishing table is provided with a polishing pad 22. The polishing head 21 is arranged above the polishing pad 22 and is used to absorb the wafer. After the polishing head 21 absorbs the wafer, a force can be applied to the wafer to place the wafer between the polishing head 21 and the polishing pad 22 for polishing.

[0029] The present application does not limit the setting position of the nozzle 11. The fixed position of the nozzle 11 on the table 4 only needs to be able to clean the baffle plate 3 and at least part of the target components (including the slurry delivery component 5, the baffle plate drive component 6 and the polishing pad adjustment component 7).

[0030] In a preferred example, the nozzle 11 is disposed adjacent to the shielding plate 3 and below the upper edge of the shielding plate 3 to better clean the side wall of the shielding plate 3. Of course, in other examples, the nozzle 11 may also be disposed at a position having a certain distance from the shielding plate 3.

[0031] Preferably, the nozzle 11 is used to spray deionized water to clean the shielding plate 3 and at least part of the target component. Deionized water does not contain impurities, which can effectively prevent the shielding plate 3 and the target component from being contaminated and corroded, and improve the cleaning effect.

[0032] Reference Figure 2 As shown, the number of nozzles 11 is preferably not less than 10, and the spacing w between adjacent nozzles 11 is preferably 8 cm to 16 cm, so as to improve the cleaning effect and ensure that the nozzles 11 can clean most areas of the shielding plate 3 and the target component. In one embodiment, the spacing w between adjacent nozzles 11 is 10 cm.

[0033] Reference Figure 2 As shown, as a preferred embodiment, the nozzle 11 is fixed on the table 4 and is used to spray cleaning liquid toward the top of the shielding plate 3 to clean the inner wall of the shielding plate 3, and the cleaning effect is good.

[0034] It should be understood that the nozzle 11 spraying upwards only limits the approximate direction of the nozzle 11, rather than an absolute limit on the spraying direction of the nozzle 11. In actual use, if the spraying direction of the nozzle 11 forms a certain angle with the vertical direction (for example, less than 45°), it can be considered that the nozzle 11 sprays the cleaning liquid toward the top of the shielding plate 3.

[0035] Furthermore, the target assembly also includes a slurry delivery assembly 5 (Slurry Arm), which extends from the outside of the shielding plate 3 to the top of the polishing assembly 2. The slurry delivery assembly 5 is used to spray slurry and deionized water onto the surface of the polishing pad 22. The polishing head 21, the polishing pad 22 and the slurry cooperate with each other to achieve the polishing of the wafer. The spray range of the nozzle 11 also covers at least part of the slurry delivery assembly 5, and the cleaning liquid sprayed by the nozzle 11 can clean at least part of the slurry delivery assembly 5.

[0036] Continue to refer to Figure 1 The target assembly further includes a shielding plate driving assembly 6, which is disposed outside the shielding plate 3 and is used to drive the shielding plate 3 to move in a vertical direction relative to the polishing assembly 2. The spray range of the nozzle 11 also covers at least a portion of the shielding plate driving assembly 6, and the cleaning liquid sprayed by the nozzle 11 can also clean at least a portion of the shielding plate driving assembly 6.

[0037] In addition, the target assembly also includes a polishing pad adjustment assembly 7 (PC Arm), which is arranged outside the shielding plate 3. The polishing pad adjustment assembly 7 is used to contact the surface of the polishing pad 22 to remove excess slurry and reaction byproducts on the surface of the polishing pad 22, and to evenly distribute the slurry on the surface of the polishing pad 22, which helps to improve the polishing quality and polishing efficiency of the wafer. The spray range of the nozzle 11 also covers at least part of the polishing pad adjustment assembly 7, and the cleaning liquid sprayed by the nozzle 11 can also clean at least part of the polishing pad adjustment assembly 7.

[0038] Furthermore, the cleaning component 1 is used to start cleaning after the wafer polishing is completed. With such a structure, on the one hand, it can prevent the cleaning liquid from mixing with the slurry and affecting the polishing effect of the wafer; on the other hand, after the wafer polishing is completed, the shielding plate 3, the slurry conveying component 5, the shielding plate driving component 6 and the polishing pad adjustment component 7 can be cleaned as a whole, which can improve the cleaning effect and clean the slurry on the shielding plate 3, the slurry conveying component 5, the shielding plate driving component 6 and the polishing pad adjustment component 7 as much as possible to prevent the slurry from falling on the polishing pad 22 after crystallization and scratching the wafer.

[0039] Continue to refer to Figure 1 and Figure 2 The cleaning component 1 also includes a cleaning pipeline 12 (Self-clean Tube), which is connected to each nozzle 11 to provide cleaning liquid to each nozzle 11.

[0040] In a preferred embodiment, the slurry delivery assembly 5 includes a deionized water pipeline 51 (Slurry HPR Tube) and a slurry pipeline 52. The deionized water pipeline 51 is used to provide deionized water to the surface of the polishing pad 22 after the wafer is polished, and the slurry pipeline 52 is used to provide slurry to the surface of the polishing pad 22. The cleaning pipeline 12 is connected to the deionized water pipeline 51, and the deionized water pipeline 51 is used to provide deionized water to the cleaning pipeline 12.

[0041] In one example, the deionized water pipeline 51 is connected to the cleaning pipeline 12 through a three-way control valve, one end of the deionized water pipeline 51 is connected to the deionized water supply end, and the other end is arranged above the polishing pad 22. After the wafer is polished, deionized water can be supplied to the polishing pad 22 and the cleaning pipeline 12 through the deionized water pipeline 51 to simultaneously clean the polishing pad 22, the shielding plate 3 and the target component.

[0042] Further preferably, the cleaning pipeline 12 forms a loop 13 and surrounds the baffle plate 3, all the nozzles 11 are arranged on the loop 13 at intervals and are respectively connected to the loop 13, the loop 13 can synchronously provide cleaning liquid to all the nozzles 11, and has a simple structure and is easy to implement.

[0043] The use process of the chemical mechanical polishing device includes: before polishing the wafer, the polishing head 21 adsorbs the wafer, and the baffle plate 3 is driven by the baffle plate driving component 6 to rise. Then, the slurry is sprayed onto the polishing pad 22 through the slurry pipeline 52 of the slurry delivery component 5, and the wafer begins to be polished. After the wafer polishing is completed, deionized water is provided to the nozzle 11 through the deionized water pipeline 51 and the cleaning pipeline 12, and the nozzle 11 sprays deionized water toward the top of the baffle plate 3, thereby cleaning the inner wall of the baffle plate 3, the slurry delivery component 5, the baffle plate driving component 6 and the polishing pad adjustment component 7 as a whole, so as to prevent the slurry from forming crystals on the baffle plate 3 and the target component, and reduce the redundant particles and scratch risks on the wafer surface.

[0044] In summary, the present invention provides a chemical mechanical polishing device, which is provided with a plurality of nozzles 11 on the table 4, and the nozzles 11 can spray cleaning liquid to clean the shielding plate 3 and the surrounding target components (including the slurry delivery component 5, the shielding plate driving component 6 and the polishing pad adjustment component 7). With such a configuration, on the one hand, the cleaning liquid can be used to effectively remove the slurry remaining on the shielding plate 3 and the target component, so as to prevent the slurry from forming crystals and falling on the polishing component 2 during wafer polishing, thereby causing redundant particles and scratches on the surface of the wafer, reducing the risk of process defects of the wafer, and effectively ensuring the product yield of the wafer; on the other hand, it can also avoid cleaning the slurry crystals, reduce the difficulty of cleaning the shielding plate 3 and the target component, and reduce the cleaning time, thereby improving the equipment maintenance efficiency.

[0045] The above description is only a description of the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention. Any changes or modifications made by a person skilled in the art in the field of the present invention based on the above disclosure shall fall within the protection scope of the present invention.

Claims

1. A chemical mechanical polishing device, characterized in that: include: A polishing assembly, a baffle plate, a table and a cleaning assembly, wherein the polishing assembly and the baffle plate are arranged on the table, and the baffle plate surrounds the polishing assembly; the cleaning assembly includes a nozzle, which is arranged on the table and located outside the baffle plate. There are multiple nozzles, all of which are arranged at intervals along the circumference of the baffle plate, and the spray range of the nozzle covers the baffle plate and at least part of the target assembly.

2. The chemical mechanical polishing device according to claim 1, wherein: The nozzle is adjacent to the shielding plate and is located below the upper edge of the shielding plate; the nozzle is used for spraying deionized water to clean the shielding plate and at least a portion of the target component.

3. The chemical mechanical polishing device according to claim 1, wherein: The nozzle is used to spray the cleaning liquid toward the top of the shielding plate to clean the inner wall of the shielding plate.

4. The chemical mechanical polishing device according to claim 1, wherein: The number of the nozzles is not less than 10, and the spacing between adjacent nozzles is 8 cm to 16 cm.

5. The chemical mechanical polishing device according to any one of claims 1 to 4, characterized in that: The target component includes a slurry delivery component, which extends from the outside of the shielding plate to above the polishing component, and the spraying range of the nozzle also covers at least a portion of the slurry delivery component.

6. The chemical mechanical polishing device according to claim 5, wherein: The cleaning component also includes a cleaning pipeline, which is connected to each of the nozzles; the slurry delivery component includes a deionized water pipeline, which is connected to the cleaning pipeline and is used to provide deionized water to the cleaning pipeline.

7. The chemical mechanical polishing device according to claim 6, wherein: The cleaning pipeline forms a loop and surrounds the baffle plate, and all the nozzles are arranged on the loop at intervals and are respectively connected to the loop.

8. The chemical mechanical polishing device according to claim 1, wherein: The target component also includes a baffle driving component, which is arranged outside the baffle and is used to drive the baffle to move in a vertical direction. The spray range of the nozzle also covers at least a portion of the baffle driving component.

9. The chemical mechanical polishing device according to claim 1, wherein: The polishing assembly comprises a polishing table and a polishing head. The polishing table is provided with a polishing pad. The polishing head is arranged above the polishing pad and is used for adsorbing the wafer. The cleaning assembly is used for starting cleaning after the wafer is polished.

10. The chemical mechanical polishing device according to claim 9, wherein: The target component also includes a polishing pad adjustment component, which is arranged outside the shielding plate; the spray range of the nozzle also covers at least a portion of the polishing pad adjustment component.

Images