Aluminum-copper-manganese alloy target material, integrated circuit product and manufacturing method thereof
By introducing Mn elements into the AlCu alloy to form the AlCuMn alloy, the problem of electrochemical erosion defects in integrated circuit manufacturing is solved, and better corrosion resistance and process stability is achieved without adding process steps.
Patent Information
- Application Number
- CN202311232433.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-09-22
- Publication Date
- 2025-03-25
AI Technical Summary
During the integrated circuit manufacturing process, the precipitation of the θ-Al2Cu crystal phase in AlCu alloy leads to electrochemical erosion defects. The existing solutions increase process steps or increase production costs.
The Mn element is introduced into the AlCu alloy to form an AlCuMn alloy, and the doping concentration of Mn is 0.5 wt%-5 wt% to suppress the precipitation of Cu and the generation of the θ-Al2Cu crystal phase.
Through the doping of Mn, the generation of the θ-Al2Cu crystal phase is suppressed, the occurrence of electrochemical erosion defects is reduced, Al consumption during wet cleaning and the formation of crater-like defects are avoided, and corrosion resistance is improved.
Smart Images
Figure CN119685660A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of integrated circuit manufacturing, and in particular to an aluminum-copper-manganese alloy target material, an integrated circuit product and a manufacturing method thereof. Background Art
[0002] Aluminum (Al), as a low resistivity metal, can be used not only for metal interconnection, but also widely used in bonding pads (Bonding PAD) of packages. In addition, in order to reduce the impact of electromigration, 0.5wt% copper (Cu) is generally doped into Al. For example, in the manufacturing process of Al bonding pad (Al PAD) of actual chip, after the deposited Al is photolithographically and etched to form Al PAD, wet cleaning will be performed. Due to the presence of Cu, a galvanic erosion defect will be introduced at this time, such as Figure 1 As shown in the dotted circle area in the figure, the main reason for its formation is that, please refer to Figure 2 The thermal process (Thermal process) such as Al deposition (i.e., formation of AlCu binary alloy layer) before wet cleaning will cause Cu200a to aggregate at the Al grain boundary and form θ-Al2Cu 200b crystal phase with Al. In the process of wet cleaning to remove the residue 201 (such as residual photoresist, etc.) on the Al PAD 200 formed by photolithography and etching, under the participation of water and halogen elements (fluorine F, chlorine Cl, etc.) in the wet cleaning solution, the Al2Cu 200b cluster and the surrounding Al act as the cathode and anode of the galvanic cell respectively under the potential difference to produce a galvanic cell reaction, and the surrounding Al loses electrons (i.e., Al 3+ ) is dissolved, and Al2Cu 200b is retained to form a crater-shaped defect 202.
[0003] To address this problem, the main solutions in the industry are as follows:
[0004] (1) Control the high temperature process in the production process to alleviate the precipitation of Al2Cu. Although this method can control the generation of defects, controlling the high temperature process in the production process may reduce the window of other processes, which is not conducive to stability control;
[0005] (2) After the Al layer (doped with 0.5 wt% Cu) used to manufacture Al PAD is deposited, a protective layer is deposited on the Al layer to prevent the Al PAD formed by etching from contacting the chemicals in the wet cleaning process. Although this method can control the generation of defects, the need to form a protective layer will inevitably increase the process steps, resulting in increased production costs.
[0006] Therefore, a new solution is needed that can not only improve the electrochemical corrosion defects but also does not increase the process steps, which is conducive to controlling process stability and cost. Summary of the invention
[0007] The object of the present invention is to provide an aluminum-copper-manganese alloy target material, an integrated circuit product and a manufacturing method thereof, which can improve electrochemical corrosion defects without increasing process steps, and is conducive to controlling process stability and cost.
[0008] To achieve the above-mentioned purpose, the present invention provides an aluminum-copper-manganese alloy target, which is made of aluminum-copper-manganese alloy. The main components of the aluminum-copper-manganese alloy are aluminum, copper and manganese. The mass percentage of copper element in the aluminum-copper-manganese alloy is 0.25wt%-1wt%, and the mass percentage of manganese element in the aluminum-copper-manganese alloy is 0.5wt%-5wt%.
[0009] Optionally, the mass percentage of the copper element in the aluminum-copper-manganese alloy is less than the mass percentage of the manganese element in the aluminum-copper-manganese alloy.
[0010] Optionally, the mass percentage of the copper element in the aluminum-copper-manganese alloy is 0.5wt%, and the mass percentage of the manganese element in the aluminum-copper-manganese alloy is 1wt%.
[0011] Based on the same inventive concept, the present invention also provides an integrated circuit product, which includes at least one conductive structure, wherein the conductive structure is an aluminum-copper-manganese alloy, wherein the main components of the aluminum-copper-manganese alloy are aluminum, copper and manganese, the mass percentage of the copper element in the aluminum-copper-manganese alloy is 0.25wt%-1wt%, and the mass percentage of the manganese element in the aluminum-copper-manganese alloy is 0.5wt%-5wt%.
[0012] Optionally, the mass percentage of the copper element in the aluminum-copper-manganese alloy is less than the mass percentage of the manganese element in the aluminum-copper-manganese alloy.
[0013] Optionally, the mass percentage of the copper element in the aluminum-copper-manganese alloy is 0.5wt%, and the mass percentage of the manganese element in the aluminum-copper-manganese alloy is 1wt%.
[0014] Optionally, the conductive structure is an aluminum interconnect line, an aluminum plug or an aluminum pad.
[0015] Based on the same inventive concept, the present invention also provides a method for manufacturing an integrated circuit product, which comprises:
[0016] Providing a substrate, using an aluminum-copper alloy target to perform physical vapor deposition and introducing a manganese element during the deposition process, or using an aluminum target to perform physical vapor deposition and introducing manganese and copper elements respectively during the deposition process, or using the aluminum-copper-manganese alloy target as described in the present invention to perform physical vapor deposition, so as to deposit an aluminum-copper-manganese alloy film on the substrate, wherein the main components of the aluminum-copper-manganese alloy film are aluminum, copper and manganese, the mass percentage of the copper element in the aluminum-copper-manganese alloy film is 0.25wt%-1wt%, and the mass percentage of the manganese element in the aluminum-copper-manganese alloy film is 0.5wt%-5wt%;
[0017] The aluminum-copper-manganese alloy film is photolithographically and etched, and the remaining aluminum-copper-manganese alloy film forms at least one conductive structure.
[0018] Optionally, during physical vapor deposition, corresponding DC bias and radio frequency power are applied in a deposition chamber to form the aluminum-copper-manganese alloy film.
[0019] Optionally, the conductive structure is an aluminum interconnect, an aluminum plug or an aluminum pad, and after the conductive structure is formed, wet cleaning is performed to remove residues on the conductive structure.
[0020] Compared with the prior art, the technical solution of the present invention has at least the following beneficial effects:
[0021] 1. AlCuMn alloy is used to replace the original AlCu alloy, that is, Mn element is doped in the AlCu alloy, and the mass percentage of Mn element in the AlCuMn alloy is 0.5wt%-5wt%. Mn doping can inhibit the precipitation of Cu, thereby inhibiting the generation of θ-Al2Cu crystal phase in the AlCu alloy, avoiding the problem that the θ-Al2Cu crystal orientation forms a primary battery with the Al matrix and consumes Al and forms crater-shaped defects during wet cleaning. Therefore, the problem of electrochemical corrosion defects can be solved from the source (i.e., the corresponding aluminum alloy thin film deposition process) in the manufacture of integrated circuit products, without increasing the process steps, and can effectively reduce unnecessary losses, which is conducive to controlling process stability and cost.
[0022] 2. Although the doping of Mn will form a new precipitate phase MnAl6, the potential difference between MnAl6 and Al is smaller than that of θ-Al2Cu, so the galvanic cell reaction between MnAl6 and Al is weaker, and the AlCuMn alloy has better corrosion resistance than the AlCu alloy. BRIEF DESCRIPTION OF THE DRAWINGS
[0023] Those skilled in the art will appreciate that the accompanying drawings are provided for a better understanding of the present invention and do not constitute any limitation on the scope of the present invention.
[0024] Figure 1This is a scanning electron microscope image of the electrochemical corrosion (Galvanic Erosion) defect of Al PAD manufactured by the prior art.
[0025] Figure 2 Schematic diagram of the crater-shaped defect generation mechanism of Al PAD manufactured by existing technology.
[0026] Figure 3 It is a schematic diagram of the phase diagram of aluminum-copper alloy (i.e., AlCu binary alloy, whose main components are Al element and Cu element).
[0027] Figure 4 It is a schematic diagram of the cross-sectional structure of a device in a method for manufacturing an integrated circuit product according to a specific embodiment of the present invention. DETAILED DESCRIPTION
[0028] In the following description, a large number of specific details are given in order to provide a more thorough understanding of the present invention. However, it is obvious to those skilled in the art that the present invention can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present invention, some technical features known in the art are not described. It should be understood that the present invention can be implemented in different forms and should not be interpreted as being limited to the embodiments proposed here. On the contrary, providing these embodiments will make the disclosure thorough and complete, and the scope of the present invention will be fully conveyed to those skilled in the art. The same reference numerals represent the same elements from beginning to end. It should be understood that when an element is referred to as "connected to", "coupled" other elements, it can be directly connected to other elements, or there can be intervening elements. On the contrary, when an element is referred to as "directly connected to" other elements, there is no intervening element. When used here, the singular forms of "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates another way. It should also be understood that the term "comprising" is used to identify the presence of features, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, steps, operations, elements, components and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.
[0029] The technical solution proposed by the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer according to the following description. It should be noted that the accompanying drawings are all in a very simplified form and are not in precise proportions, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention.
[0030] Please refer to Figure 3The inventors of the present application have found that in the prior art integrated circuit product manufacturing process, when manufacturing conductive structures such as Al interconnects or aluminum bonding pads (Al PADs), the following steps are usually included: a. Using PVD to deposit an AlCu alloy layer (which is an AlCu binary alloy, the main components are Al and Cu, wherein the Cu content is 0.5wt%, and the rest are Al and inevitable impurities including Mn), on a wafer (wafer, also known as a substrate). The PVD process is a high-temperature process (>250°C). When the AlCu alloy layer is just deposited at high temperature (without cooling), the AlCu binary alloy is a supersaturated solid solution (α crystal phase, Cu is not precipitated); b. The wafer is then transferred into a cooling chamber for rapid cooling, at which time Cu begins to precipitate as GP zones (i.e., pre-dissolved atomic segregation zones in AlCu binary alloy) crystal phase; c. After subsequent high-temperature process steps and aging process, the AlCu crystal phase gradually transforms: GP→θ”(Discs)→θ'(Plates)→θ-Al2Cu. It can be seen that the generation of θ-Al2Cu crystal phase involves the transformation of multiple intermediate crystal phases.
[0031] Based on this, the present invention provides a technical solution, which introduces Mn element into AlCu binary alloy target or into deposited AlCu binary alloy film, and the mass percentage of Mn element in AlCuMn alloy is 0.5wt%-5wt%, aiming to solve the problem of electrochemical corrosion defects caused by precipitation of θ-Al2Cu crystal phase during wet cleaning when manufacturing conductive structures such as Al bonding pads. Among them, the introduction of Mn element is mainly based on the following: (1) When AlCuMn alloy (i.e. AlCuMn ternary alloy) transforms from θ' crystal phase to θ crystal phase, Mn atoms will preferentially segregate to the interface. It can be clearly known through atomic probe tomography analysis that Mn atoms are more distributed at the interface of θ' crystal phase agglomeration than Cu atoms. This interface segregation can delay or stop the transformation of θ' crystal phase to θ crystal phase by reducing interface energy (thermodynamic effect) and generating diffusion barrier, solute resistance and ledge poisoning (kinetic effect). (2) The introduction of Mn can reduce the diffusion of Cu in Al (i.e., inhibit the precipitation of Cu), which not only reduces the decomposition tendency of α-Al, but also reduces the tendency of θ-Al2Cu to aggregate at high temperature (i.e., inhibits the generation of θ-Al2Cu crystal phase). For example, at 0.5%wtCu content, the main crystal phases in the AlCuMn solid solution are α-Al and MnAl6. (3) Even if MnAl6 exists in the AlCuMn solid solution, compared with the potential of θ-Al2Cu in the AlCu solid solution in the prior art (about -440mV), the potential of MnAl6 (about -760mV) is closer to the potential of Al (about -840mV), and the potential difference between MnAl6 and Al is smaller than that between θ-Al2Cu and Al. Therefore, the galvanic cell reaction between MnAl6 and Al is weaker than that between θ-Al2Cu and Al, and the corrosion resistance is better.
[0032] In general, the doping of Mn in the present invention can, on the one hand, inhibit the generation of the θ-Al2Cu crystal phase, and on the other hand, the corrosion resistance of the formed new precipitated phase is better.
[0033] Based on the above inventive concept, an embodiment of the present invention provides an aluminum-copper-manganese alloy target, wherein the aluminum-copper-manganese alloy target is made of an aluminum-copper-manganese alloy AlCuMn (i.e., an AlCuMn ternary alloy), wherein the main components of the aluminum-copper-manganese alloy AlCuMn are aluminum Al, copper Cu, and manganese Mn, wherein the mass percentage of the Cu element in the AlCuMn alloy is 0.25wt%-1wt%, the mass percentage of the Mn element in the AlCuMn alloy is 0.5wt%-5wt%, and the remainder of the aluminum-copper-manganese alloy AlCuMn other than the copper Cu element and the manganese Mn element is the Al element and other inevitable impurities or impurities used for performance optimization, wherein these inevitable impurities may be impurities that are unavoidably introduced from the formation environment during the formation of the aluminum-copper-manganese alloy AlCuMn, and these impurities used for performance optimization may be non-metallic elements that need to be added during the formation of the aluminum-copper-manganese alloy AlCuMn and are used to improve the performance of the aluminum-copper-manganese alloy AlCuMn or other metal elements other than Al, Cu, and Mn.
[0034] Optionally, the mass percentage of the Al element in the AlCuMn alloy is respectively greater than the mass percentage of the manganese Mn element, the Cu element and other impurities that are unavoidable or used for performance optimization. As an example, the mass percentage of the Al element in the AlCuMn alloy is greater than the sum of the mass percentages of the manganese Mn element, the Cu element and other impurities that are unavoidable or used for performance optimization.
[0035] Optionally, the mass percentage of the Cu element in the aluminum-copper-manganese alloy is less than the mass percentage of the manganese (Mn) element in the AlCuMn alloy. As an example, the mass percentage of the Cu element in the AlCuMn alloy is 0.5wt%, and the mass percentage of the Mn element in the AlCuMn alloy is 1wt%. As another example, the mass percentage of the Cu element in the AlCuMn alloy is 0.5wt%, and the mass percentage of the Mn element in the AlCuMn alloy is greater than 0.5wt% and not more than 5wt%. As another example, the mass percentage of the Mn element in the AlCuMn alloy is 1wt%, and the mass percentage of the Cu element in the AlCuMn alloy is less than 1wt% and not less than 0.25wt%.
[0036] Please refer to Figure 4(D) in the above, an embodiment of the present invention further provides an integrated circuit product, which includes at least one conductive structure 102a, wherein the conductive structure 102a is an aluminum-copper-manganese alloy AlCuMn, and the main components of the AlCuMn alloy are aluminum Al, copper Cu and manganese Mn. The mass percentage of the Cu element in the AlCuMn alloy is 0.25wt%-1wt%, and the mass percentage of the Mn element in the AlCuMn alloy is 0.5wt%-5wt%. In addition to the Cu element and the Mn element, the balance of the aluminum-copper-manganese alloy AlCuMn is the Al element and other impurities that are inevitable or used for performance optimization. These inevitable impurities may be impurities that are inevitably introduced from the formation environment during the formation of the aluminum-copper-manganese alloy AlCuMn. These impurities used for performance optimization may be non-metallic elements or other metal elements (except Al, Cu, and Mn) that need to be added during the formation of the aluminum-copper-manganese alloy AlCuMn and are used to improve the performance of the aluminum-copper-manganese alloy AlCuMn.
[0037] Optionally, in the conductive structure of the integrated circuit product (i.e., made of AlCuMn alloy), the mass percentage of the Al element is respectively greater than the mass percentage of the manganese Mn element, the Cu element, and other impurities that are unavoidable or used for performance optimization. As an example, the mass percentage of the Al element is greater than the sum of the mass percentages of the manganese Mn element, the Cu element, and other impurities that are unavoidable or used for performance optimization.
[0038] Optionally, in the conductive structure of the integrated circuit product (i.e., made of AlCuMn alloy), the mass percentage of the Cu element in the AlCuMn alloy is less than the mass percentage of the Mn element in the AlCuMn alloy. As an example, the mass percentage of the Cu element in the AlCuMn alloy is 0.5wt%, and the mass percentage of the Mn element in the AlCuMn alloy is 1wt%. As another example, the mass percentage of the Cu element in the AlCuMn alloy is 0.5wt%, and the mass percentage of the Mn element in the AlCuMn alloy is greater than 0.5wt% and not more than 5wt%. As another example, the mass percentage of the manganese element in the AlCuMn alloy is 1wt%, and the mass percentage of the Cu element in the AlCuMn alloy is less than 1wt% and not less than 0.25wt%.
[0039] It should be understood that the conductive structure 102a in the integrated circuit product can be any suitable AlCuMn alloy structure, for example, the conductive structure is an aluminum interconnect (Al Metal), an aluminum plug (Al contact) or an aluminum pad (AlPAD). The integrated circuit product can also include any other suitable film layers and structures, for example, the integrated circuit product includes a substrate 100, and the conductive structure 102a is used as an upper conductive structure and is formed on the substrate 100. As an example, the substrate 100 includes a lower interlayer dielectric layer 101a, an etch stop layer 101b, an upper interlayer dielectric layer 101c, a diffusion barrier layer 101d, and a lower conductive structure 101e, wherein the lower conductive structure 101e is embedded in the lower interlayer dielectric layer 101a, and can be a copper interconnection line, a copper plug or a copper pad and other structures. A through hole (not marked) is formed in the substrate 100, which passes through the upper interlayer dielectric layer 101c, the etch stop layer 101b and the lower interlayer dielectric layer 101a from top to bottom in sequence. The diffusion barrier layer 101d covers the inner surface of the through hole and extends to the partial surface of the upper interlayer dielectric layer 101c at the periphery of the top of the through hole. The conductive structure 102a serves as an upper conductive structure, which is filled in the through hole and extends to the surface of the diffusion barrier layer 101d at the periphery of the top of the through hole. The conductive structure 102a can be an aluminum pad or an aluminum interconnection line.
[0040] In other embodiments of the present invention, there may be no through hole in the substrate 100, and the bottom of the conductive structure 102a is electrically connected to the corresponding structure below (such as copper interconnect Cu Metal, copper plug Cu contact / copper pillar Cu Via, or copper pad Cu PAD, etc.).
[0041] An embodiment of the present invention further provides a method for manufacturing an integrated circuit product, which comprises the following steps:
[0042] First, please refer to Figure 4In (A), a substrate 100 is provided, and physical vapor deposition (PVD) is performed using the aluminum-copper-manganese alloy target of the present invention to deposit an aluminum-copper-manganese alloy film (AlCuMn) 102 on the substrate 100 . The main components of the aluminum-copper-manganese alloy film 102 and the mass percentage of each component are consistent with the aluminum-copper-manganese alloy target of the present invention. Specifically, the main components of the aluminum-copper-manganese alloy film 102 are aluminum Al, copper Cu and manganese Mn, and the mass percentage of Cu element in the aluminum-copper-manganese alloy film 102 is 0.25wt%-1wt%, and the mass percentage of Mn element in the aluminum-copper-manganese alloy film 102 is 0.5wt%-5wt%. In addition to Cu and Mn elements, the balance of the aluminum-copper-manganese alloy film 102 is Al element and other inevitable or impurities for performance optimization. These inevitable impurities can be impurities that are inevitably introduced from the formation environment during the formation of the aluminum-copper-manganese alloy AlCuMn. These impurities for performance optimization can be non-metallic elements that need to be added during the formation of the aluminum-copper-manganese alloy AlCuMn and are used to improve the performance of the aluminum-copper-manganese alloy AlCuMn or other metal elements other than Al, Cu, and Mn. In addition, the substrate 100 can be a substrate processed by any suitable integrated circuit product manufacturing process, which can include any suitable film layer and structure. As an example, the substrate 100 includes a lower interlayer dielectric layer 101a, an etch stop layer 101b, an upper interlayer dielectric layer 101c, a diffusion barrier layer 101d, and a lower conductive structure 101e, wherein the lower conductive structure 101e is embedded in the lower interlayer dielectric layer 101a, and can be a copper interconnect, a copper plug or a copper pad, a tungsten plug, and the like. A through hole (not marked) is formed in the substrate 100, which passes through the upper interlayer dielectric layer 101c, the etch stop layer 101b, and the lower interlayer dielectric layer 101a from top to bottom in sequence. The diffusion barrier layer 101d covers the inner surface of the through hole and extends to a portion of the surface of the upper interlayer dielectric layer 101c at the periphery of the top of the through hole. The lower interlayer dielectric layer 101a, the etch stop layer 101b, the upper interlayer dielectric layer 101c and the diffusion barrier layer 101d can be any suitable material. For example, the lower interlayer dielectric layer 101a and the upper interlayer dielectric layer 101c are made of the same material, both of which are doped or undoped silicate glass (USG), the etch stop layer 101b is one or more combinations of silicon oxide, silicon nitride or silicon oxynitride, and the diffusion barrier layer 101d is one or more combinations of Ti, Ta, TiN or TaN.
[0043] Optionally, the aluminum-copper-manganese alloy target of the present invention is used to perform physical vapor deposition of the aluminum-copper-manganese alloy film 102 by a magnetron sputtering method, and when depositing the aluminum-copper-manganese alloy film 102, a corresponding direct current bias (DC) and radio frequency power (RF power) are applied in the deposition chamber to form the aluminum-copper-manganese alloy film 102 with a denser film and better uniformity, thereby making the Cu and Mn atoms on the entire wafer or substrate 100 more evenly distributed.
[0044] Next, please refer to Figure 4 In (B), a photoresist is coated on the aluminum-copper-manganese alloy film 102 and a series of photolithography processes such as exposure and development are performed to form a patterned photoresist layer 103, which can define the area in the aluminum-copper-manganese alloy film 102 for forming a conductive structure.
[0045] Next, please refer to Figure 4 In (C), the patterned photoresist layer 103 is used as a mask to dry-etch the aluminum-copper-manganese alloy film 102 and the diffusion barrier layer 101d, thereby removing excess copper-manganese alloy film 102 and diffusion barrier layer 101d around the through hole, forming a conductive structure 102a of the aluminum-copper-manganese alloy filling the through hole and extending on a partial surface of the surrounding diffusion barrier layer 101a. The conductive structure 102a can be a dual-damascene aluminum interconnect structure or an aluminum pad structure.
[0046] Then, please refer to Figure 4 In (D), the patterned photoresist layer 103 is removed by an ashing process, and wet cleaning is performed to remove residues on the top of the conductive structure 102a.
[0047] Another embodiment of the present invention further provides a method for manufacturing an integrated circuit product, which comprises the following steps:
[0048] First, please refer to Figure 4In (A), physical vapor deposition is performed using an aluminum-copper alloy target (which is made of an AlCu binary alloy, the main components of which are Al and Cu, and the impurities thereof do not include Mn), and manganese (Mn) is introduced during the deposition process to form an aluminum-copper-manganese (AlCuMn) alloy film 102, wherein the doping concentration of Mn needs to meet the process requirements and be low and uniform. Specifically, the mass percentage of Mn in the formed aluminum-copper-manganese alloy film 102 is 0.5wt%-5wt%; or, physical vapor deposition is performed using an aluminum target (which is made of Al metal, the main component of which is Al, and the impurities thereof do not include Mn and Cu), and Mn and Cu are introduced during the deposition process to form the aluminum-copper-manganese alloy film 102, wherein the doping concentrations of Cu and Mn need to meet the process requirements and be low and uniform. Specifically, the mass percentage of Cu element in the formed aluminum-copper-manganese alloy film 102 is 0.25wt%-1wt%, and the mass percentage of Mn element in the formed aluminum-copper-manganese alloy film 102 is 0.5wt%-5wt%; that is, the main components of the aluminum-copper-manganese alloy film 102 formed thereby are aluminum Al, copper Cu and manganese Mn, and the mass percentage of Cu element in the aluminum-copper-manganese alloy film 102 is 0.25wt%-1wt%, and the mass percentage of Mn element in the aluminum-copper-manganese alloy film 102 is 0.5wt%-5wt%. In addition to the Cu element and the Mn element, the remainder of the aluminum-copper-manganese alloy film 102 is the Al element and other inevitable impurities or impurities used for performance optimization except Al, Cu, and Mn. These inevitable impurities may be impurities that are inevitably introduced from the formation environment during the formation of the aluminum-copper-manganese alloy AlCuMn, and these impurities used for performance optimization may be non-metallic elements or other metal elements that need to be added in the formation of the aluminum-copper-manganese alloy AlCuMn and are used to improve the performance of the aluminum-copper-manganese alloy AlCuMn.
[0049] Optionally, the aluminum-copper alloy target or aluminum target is used to perform physical vapor deposition of the aluminum-copper-manganese alloy film 102 by a magnetron sputtering method, and when depositing the aluminum-copper-manganese alloy film 102, a corresponding direct current bias (DC) and radio frequency power (RF power) are applied in the deposition chamber to form the aluminum-copper-manganese alloy film 102 with a denser film and better uniformity, thereby making the Cu and Mn atoms on the entire wafer or substrate 100 more evenly distributed.
[0050] Next, please refer to Figure 4 In (B), a photoresist is coated on the aluminum-copper-manganese alloy film 102 and a series of photolithography processes such as exposure and development are performed to form a patterned photoresist layer 103, which can define the area in the aluminum-copper-manganese alloy film 102 for forming a conductive structure.
[0051] Next, please refer to Figure 4 In (C), the patterned photoresist layer 103 is used as a mask to dry-etch the aluminum-copper-manganese alloy film 102 and the diffusion barrier layer 101d, thereby removing excess copper-manganese alloy film 102 and diffusion barrier layer 101d around the through hole, forming a conductive structure 102a of the aluminum-copper-manganese alloy filling the through hole and extending on a partial surface of the surrounding diffusion barrier layer 101a. The conductive structure 102a can be a dual-damascene aluminum interconnect structure or an aluminum pad structure.
[0052] Then, please refer to Figure 4 In (D), the patterned photoresist layer 103 is removed by an ashing process, and wet cleaning is performed to remove residues on the top of the conductive structure 102a.
[0053] In the present invention, since the AlCuMn alloy film is used to replace the original AlCu alloy film, that is, the AlCu alloy film is doped with Mn elements, and the mass percentage of Mn elements in the AlCuMn alloy film is 0.5wt%-5wt%, the doping of Mn can inhibit the precipitation of Cu, thereby inhibiting the generation of the θ-Al2Cu crystal phase in the AlCu alloy, avoiding the problem that the θ-Al2Cu crystal orientation forms a primary battery with the Al matrix and consumes Al and forms crater-shaped defects during wet cleaning, thereby solving the problem of electrochemical corrosion defects from the source (i.e., the corresponding aluminum alloy film deposition process) in the manufacture of integrated circuit products, without increasing the process steps, and can effectively reduce unnecessary losses, which is conducive to controlling process stability and cost. Further, although the doping of Mn will form a new precipitated phase MnAl6, since the potential difference between MnAl6 and Al is smaller than the potential difference between θ-Al2Cu and Al, the primary battery reaction between MnAl6 and Al is relatively weaker, and the AlCuMn alloy has better corrosion resistance than the AlCu alloy.
[0054] The above description is only a description of the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any changes or modifications made by a person skilled in the art in the field of the present invention based on the above disclosure shall fall within the scope of protection of the technical solution of the present invention.
Claims
1. An aluminum-copper-manganese alloy target, characterized in that: The aluminum-copper-manganese alloy target is made of aluminum-copper-manganese alloy, and the main components of the aluminum-copper-manganese alloy are aluminum, copper, and manganese. The mass percentage of copper in the aluminum-copper-manganese alloy is 0.25wt%-1wt%, and the mass percentage of manganese in the aluminum-copper-manganese alloy is 0.5wt%-5wt%.
2. The aluminum-copper-manganese alloy target according to claim 1, characterized in that: The mass percentage of the copper element in the aluminum-copper-manganese alloy is less than the mass percentage of the manganese element in the aluminum-copper-manganese alloy.
3. The aluminum-copper-manganese alloy target according to claim 1 or 2, characterized in that: The mass percentage of the copper element in the aluminum-copper-manganese alloy is 0.5 wt %, and / or the mass percentage of the manganese element in the aluminum-copper-manganese alloy is 1 wt %.
4. An integrated circuit product, characterized in that: It includes at least one conductive structure, which is an aluminum-copper-manganese alloy. The main components of the aluminum-copper-manganese alloy are aluminum, copper and manganese. The mass percentage of the copper element in the aluminum-copper-manganese alloy is 0.25wt%-1wt%, and the mass percentage of the manganese element in the aluminum-copper-manganese alloy is 0.5wt%-5wt%.
5. The integrated circuit product according to claim 4, characterized in that: The mass percentage of the copper element in the aluminum-copper-manganese alloy is less than the mass percentage of the manganese element in the aluminum-copper-manganese alloy.
6. The integrated circuit product according to claim 4, characterized in that: The mass percentage of the copper element in the aluminum-copper-manganese alloy is 0.5 wt %, and / or the mass percentage of the manganese element in the aluminum-copper-manganese alloy is 1 wt %.
7. The integrated circuit product according to any one of claims 4 to 6, characterized in that: The conductive structure is an aluminum interconnection line, an aluminum plug or an aluminum pad.
8. A method for manufacturing an integrated circuit product, characterized in that: include: Providing a substrate, using an aluminum-copper alloy target to perform physical vapor deposition and introducing a manganese element during the deposition process, or using an aluminum target to perform physical vapor deposition and introducing manganese and copper elements respectively during the deposition process, or using the aluminum-copper-manganese alloy target as described in any one of claims 1 to 3 to perform physical vapor deposition, so as to deposit an aluminum-copper-manganese alloy film on the substrate, wherein the main components of the aluminum-copper-manganese alloy film are aluminum, copper and manganese, the mass percentage of the copper element in the aluminum-copper-manganese alloy film is 0.25wt%-1wt%, and the mass percentage of the manganese element in the aluminum-copper-manganese alloy film is 0.5wt%-5wt%; The aluminum-copper-manganese alloy film is photolithographically and etched, and the remaining aluminum-copper-manganese alloy film forms at least one conductive structure.
9. The method for manufacturing an integrated circuit product according to claim 8, wherein: When performing physical vapor deposition, corresponding direct current bias and radio frequency power are applied in the deposition chamber to form the aluminum-copper-manganese alloy film.
10. The method for manufacturing an integrated circuit product according to claim 8 or 9, characterized in that: The conductive structure is an aluminum interconnection line, an aluminum plug or an aluminum pad. After the conductive structure is formed, wet cleaning is performed to remove residues on the conductive structure.