A dual-target co-sputtering doping ratio control device and method

Abstract

The application provides a double-target co-deposition magnetron sputtering doping proportion control device and method, relates to the technical field of film preparation, and comprises a target material assembly composed of a first target material and a second target material, a film deposition assembly located on one side of the target material assembly, the film deposition assembly comprising a rotating drum and a plurality of substrates uniformly arranged on the outer wall of the rotating drum, a shielding assembly located between the target material assembly and the film deposition assembly and symmetrically arranged relative to the central axis of the rotating drum, the shielding assembly comprising a fixing frame, a plurality of baffles and a first driving device, the baffles being arranged at intervals in the height direction of the inner side of the fixing frame, and the first driving device being provided with a plurality of baffles and a first driving device, respectively, for driving the baffles to move in the horizontal direction to adjust the position of the baffles in the horizontal direction to shield the target material. Through the arrangement of the baffles in the shielding assembly and the first driving device, the sputtering area of the target material on the substrate can be adjusted, the sputtering coverage range of the two kinds of target materials on the substrate can be effectively controlled, and the accurate control of the doping proportion of different materials on the substrate can be realized.

Description

Technical Field

[0001] The present invention relates to the field of thin film material manufacturing, and in particular to a dual-target co-plating magnetron sputtering doping ratio control device and method. Background Art

[0002] In the manufacturing process of modern optical and functional thin films, doping technology is one of the important means to optimize and regulate material properties. Magnetron sputtering coating technology is widely used in the preparation of thin film materials, and the accuracy of controlling the doping ratio has a crucial impact on the final performance of the film. However, traditional doping methods usually rely on controlling the sputtering power or time of the target material or re-melting the target material, which makes it difficult to achieve precise control of different target materials, especially in applications requiring high-precision doping, such as multi-layer optical films or coatings with specific functions.

[0003] Currently, to achieve uniform doping of different materials on a substrate, existing technologies primarily rely on adjusting sputtering parameters or modifying target material design. However, these methods often suffer from issues such as difficulty in precisely controlling the doping ratio and poor stability, resulting in difficulties achieving desired film uniformity and doping accuracy. Furthermore, during high-power magnetron sputtering, the sputtering rate, angle, and distribution vary significantly among different materials, further complicating doping ratio control. Summary of the Invention

[0004] In view of this, the present invention proposes a dual-target co-plating magnetron sputtering doping ratio control device and method, which can effectively control the doping ratio of different materials, thereby improving the uniformity and functionality of the thin film.

[0005] In a first aspect, the present invention discloses a dual-target co-plating magnetron sputtering doping ratio control device, comprising:

[0006] A target assembly, wherein the target assembly includes a first target and a second target, wherein the first target and the second target are arranged side by side;

[0007] A coating assembly is located on one side of the target assembly, the coating assembly comprising a rotating drum and a plurality of substrates evenly arranged on the outer wall of the rotating drum, the rotating drum being vertically located at the center of the first target and the second target;

[0008] The shielding assembly is located between the target assembly and the coating assembly and is symmetrically arranged relative to the central axis of the rotating drum. The shielding assembly includes a fixed frame, a baffle and a first driving device. A plurality of baffles are arranged at intervals along the height direction of the inner side of the fixed frame. A plurality of first driving devices are arranged on the fixed frame, each of which is used to drive the corresponding baffle to move in the horizontal direction to adjust the position of the baffle to shield the target material in the horizontal direction.

[0009] On the basis of the above technical solution, preferably, a second driving device is further included. A plurality of second driving devices are arranged on the fixed frame, each of which is used to drive the corresponding baffle to move in the vertical direction to adjust the position of the baffle in the vertical direction to block the target material.

[0010] On the basis of the above technical solution, preferably, a control system is further included, wherein the control system dynamically adjusts the shielding range of the baffle on each shielding component according to a preset doping ratio so that the doping ratio meets the requirements.

[0011] On the basis of the above technical solution, preferably, the shielding assembly further includes a connecting rod, one end of which is fixedly connected to the baffle, and the other end of which is movable through the fixing frame, and each connecting rod is respectively connected to a first driving device and a second driving device.

[0012] On the basis of the above technical solution, preferably, a plurality of mounting surfaces are evenly arranged on the outer side surface of the rotating drum, and a plurality of base plates are arranged on the mounting surface at intervals along the height direction.

[0013] In a second aspect, the present invention discloses a method for controlling the doping ratio of dual-target co-plating magnetron sputtering, which utilizes the dual-target co-plating magnetron sputtering doping ratio control device described in the first aspect, and includes the following steps:

[0014] S1. Set the sputtering distribution characteristics of target material A and target material B. The sputtering particle distribution of each target material is described according to the Gaussian distribution function. Calculate the sputtering particle distribution function of target material A and target material B on the substrate when they are not blocked, which are Y A (x TA ,y TA ) and Y B (x TB ,y TB ),in;

[0015]

[0016] Where Y 0A 、Y 0B is the maximum sputtering rate, exp is the exponential operation, σ xA and σ yA are the standard deviations of the sputtering distribution of target A in the x and y directions, σ xB and σ yB are the standard deviations of the sputtering distribution of target B in the x and y directions, respectively. TA and y TA Indicates the position coordinates of a point on the substrate surface of target A, x TB and y TB Indicates the position coordinates of a certain point of target B on the substrate surface;

[0017] S2. To control the sputtering ratio of target A and target B on the substrate, an occlusion function M(x, y, D) is designed. Its value depends on whether a certain point on the target surface is blocked. It is defined as follows:

[0018]

[0019] Where x, y are the coordinates of the baffle, and D is the vertical distance from the target to the baffle;

[0020] Define the occlusion functions of target A and target B as M respectively A (x TA ,y TA ) and M B (x TB ,y TB ) to adjust the effective sputtering area of ​​targets A and B, thereby controlling the total amount of sputtering of each;

[0021] S3. Under the condition of target material shielding, calculate the actual total amount Q of target material A and target material B on the substrate by integral solution. A and Q B , through the formula The optimal baffle position and shape that meets the target ratio are determined by iteratively optimizing the baffle coordinates x and y in the occlusion function M(x,y,D), where α is the ratio of substance A to substance B in the film, which is a preset value.

[0022] S4. According to the calculation results, by adjusting the shielding area of ​​the baffle, the effective sputtering area of ​​target materials A and B is adjusted respectively, so as to accurately control the doping ratio of the thin film.

[0023] On the basis of the above technical solution, preferably, the Gaussian distribution function in step S1 is obtained by experimentally measuring the specific sputtering amount of the target material, recording the sputtering particle distribution data of different areas on the target surface, and fitting the experimental data using a nonlinear regression or fitting method. The sputtering distribution characteristics of the target material are determined by its width e and length d, which limit the spatial range of the sputtering particle distribution.

[0024] On the basis of the above technical solution, preferably, the total sputtering amount of target A and target B after shielding is respectively:

[0025]

[0026]

[0027] Among them, ρ A and ρ B They represent the vertical distances from target A and target B to the substrate, respectively, and are used as constants in the calculation. A and d ARespectively represent the width and length of target A, defining the physical size of target A, e B and d B Respectively represent the width and length of target B, dx TA and dy TA are the differential elements of target A along the x-axis and y-axis directions, dx TB and dy TB are the differential elements of target B integrated along the x-axis and y-axis respectively.

[0028] On the basis of the above technical solution, preferably, the position of the baffle in the shielding assembly is dynamically adjusted through the control system. In the x-direction, the horizontal movement of each baffle is controlled by the first driving device, thereby adjusting the shielding area of ​​the target surface in the x-direction. In the y-direction, the vertical movement of each baffle is controlled by the second driving device, thereby adjusting the shielding area of ​​the target surface in the y-direction. The position of each baffle is dynamically adjusted according to the sputtering distribution and shielding requirements of the target material, ensuring that the sputtering amount in each area meets the doping ratio requirements, realizing precise control of the sputtering area, and optimizing the adjustment of the doping ratio.

[0029] The present invention has the following beneficial effects compared to the prior art:

[0030] (1) By setting the baffle and the first driving device in the shielding assembly, the sputtering area of ​​the target material on the substrate can be adjusted, and the sputtering coverage of the two target materials on the substrate can be effectively controlled, thereby achieving precise control of the doping ratio of different materials on the substrate. Compared with traditional methods (such as adjusting power or time), the magnetron sputtering doping ratio control device of the present invention is more direct and efficient. The sputtering rate, angle and particle distribution of different target materials are usually different. The shielding assembly can compensate for these differences by dynamically adjusting the effective sputtering area of ​​the target material, making its deposition ratio on the substrate more controllable. This device improves the quality of the film by reducing film defects and optical losses caused by uneven doping. By optimizing the sputtering ratio of different materials, the absorption rate and defect density are reduced, ensuring the reliability of the film in high-performance applications.

[0031] (2) Dual adjustment in the horizontal and vertical directions helps to adjust the shape or size of the sputtering area, and the system can more accurately control the sputtering area and proportion of different target materials.

[0032] (3) By setting the sputtering distribution characteristics of target materials A and target materials B, preliminary data is provided for subsequent calculations to ensure the controllability of the sputtering process. The shielding function is designed, and the effective sputtering area of ​​target materials A and target materials B is adjusted by using the position of the baffle to achieve the regulation of the sputtering ratio. The actual total sputtering amount of target materials A and B is calculated by integration, and the material ratio of A to B in the film is accurately controlled through iterative optimization. The shielding area of ​​the baffle is adjusted according to the optimization results, and the doping ratio of the film is accurately controlled to ensure that the material performance meets the requirements.

[0033] (4) By introducing experimental measurements and nonlinear regression fitting, the Gaussian distribution function is optimized using actual sputtering particle distribution data, thereby accurately describing the sputtering distribution characteristics of the target material. In this way, the sputtering distribution of target materials A and B can be more closely aligned with the actual process, providing more precise doping ratio control. This design not only improves the accuracy of sputtering control, but also optimizes the adjustability of the entire film doping ratio, ensuring the uniformity and consistency of film quality.

[0034] (5) The total amount of sputtering of target A and target B under the influence of shielding components was calculated by integration. By precisely adjusting the physical size of the target (such as width e, length d) and the sputtering distribution function (Y A and Y B ), and the position of the target surface and the distance from the substrate to the target (ρ A and ρ B , this method can achieve precise control of the sputtering area. Ultimately, the formula can optimize the doping ratio to ensure that the sputtering amount in different areas meets the predetermined requirements, thereby achieving efficient and precise sputtering process control BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0036] Figure 1 It is a schematic diagram of the three-dimensional structure of the dual-target co-plating magnetron sputtering doping ratio control device disclosed in the present invention;

[0037] Figure 2 This is a front view of the dual-target co-plating magnetron sputtering doping ratio control device disclosed in the present invention;

[0038] Figure 3 It is a top view of the dual-target co-plating magnetron sputtering doping ratio control device disclosed in the present invention;

[0039] Reference numerals:

[0040] 1. Target assembly; 11. First target; 12. Second target; 2. Coating assembly; 21. Rotating drum; 22. Substrate; 3. Shielding assembly; 31. Fixing frame; 32. Baffle; 33. First driving device; 34. Second driving device; 35. Connecting rod; 210. Mounting surface. DETAILED DESCRIPTION

[0041] The following will be combined with the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0042] like Figure 1 As shown, combined Figure 2 and 3 An embodiment of the present invention discloses a dual-target co-plating magnetron sputtering doping ratio control device, including a target material component 1, a coating component 2 and a shielding component 3.

[0043] The target assembly 1 includes a first target 11 and a second target 12 , which are arranged side by side to facilitate controlling the interaction and superposition of sputtered particles through spatial distribution to form a mixed coating on the substrate 22 .

[0044] The coating assembly 2 is located on one side of the target assembly 1. The coating assembly 2 includes a rotating drum 21 and a plurality of substrates 22 evenly arranged on the outer wall of the rotating drum 21. The rotating drum 21 is vertically located at the center of the first target 11 and the second target 12. The setting of the rotating drum 21 arranges the substrate 22 in a dynamically rotating environment and is vertically located at the center of the target, so that the sputtered particles evenly cover the surface of the substrate 22, thereby improving the uniformity of the thin film. The rotation of the rotating drum 21 can realize dynamic adjustment of the sputtered particle distribution to avoid local uneven deposition caused by a fixed position.

[0045] The shielding assembly 3 is located between the target assembly 1 and the coating assembly 2, and is symmetrically arranged relative to the central axis of the rotating drum 21. The shielding assembly 3 includes a fixed frame 31, a baffle 32, and a first drive device 33. Multiple baffles 32 are spaced along the inner side of the fixed frame 31 in the height direction. Multiple first drives 33 are provided on the fixed frame 31, each of which is used to drive a corresponding baffle 32 to move horizontally to adjust the position of the baffle 32 in the horizontal direction to block the target. The first drive device 33 is responsible for the precise movement of the baffle 32. By blocking the target, it adjusts the effective sputtering area, thereby achieving precise control of the sputtering ratio of the first target 11 and the second target 12.

[0046] By setting the baffle 32 and the first drive device 33 in the shielding assembly 3, the sputtering area of ​​the target material on the substrate 22 can be adjusted, and the sputtering coverage of the two target materials on the substrate 22 can be effectively controlled, thereby achieving precise control of the doping ratio of different materials on the substrate 22. Compared with traditional methods (such as adjusting power or time), the magnetron sputtering doping ratio control device of the present invention is more direct and efficient. The sputtering rate, angle and particle distribution of different target materials are usually different. The shielding assembly 3 can compensate for these differences by dynamically adjusting the effective sputtering area of ​​the target material, making its deposition ratio on the substrate 22 more controllable. This device improves the quality of the film by reducing film defects and optical losses caused by uneven doping. By optimizing the sputtering ratio of different materials, the absorption rate and defect density are reduced, ensuring the reliability of the film in high-performance applications.

[0047] In some preferred embodiments, the shielding assembly 3 further includes a second drive device 34. Multiple second drive devices 34 are provided on the fixed frame 31, each of which is configured to vertically move a corresponding baffle 32 to adjust the vertical position of the baffle 32 in shielding the target. This vertical adjustment further optimizes the coverage of the target material on the substrate 22, thereby precisely controlling the sputtering ratio of the two target materials.

[0048] In cases where more precise control of the doping layer is required, vertical adjustment can help adjust the shape or size of the sputtering area. The sputtering rate of different target materials may vary with angle and position. Vertical control can help adjust the sputtering intensity of the target material at different positions, thereby achieving a more uniform doping ratio.

[0049] Through dual adjustment in the horizontal and vertical directions, the system can more accurately control the sputtering area and proportion of different target materials, which is very important for the manufacture of high-precision thin films and functional coatings, especially in applications with high requirements on doping ratio and film uniformity.

[0050] This embodiment also includes a control system, which dynamically adjusts the shielding range of the baffle 32 on each shielding assembly 3 according to a preset doping ratio so that the doping ratio meets the requirements. The control system dynamically adjusts the shielding range of each set of baffles 32 according to the preset doping ratio requirements. The first target 11 and the second target 12 are arranged on the left and right. They are two different target materials. By changing the position of the baffle 32, the sputtering area ratio of the two materials on the substrate 22 is modified, thereby achieving precise doping of different materials. For example, at a certain moment, if more sputtering of material A is required, the system will adjust the position of the baffle 32 on the side of material A to a smaller shielding range to increase the sputtering area of ​​material A on the substrate 22; conversely, to reduce the sputtering amount of material B, the control system adjusts the position of the baffle 32 according to real-time feedback so that the doping ratio meets the design requirements.

[0051] In some preferred embodiments, the shielding assembly 3 further includes connecting rods 35, one end of which is fixedly connected to the baffle 32 and the other end of which is movable through the fixed frame 31. Each connecting rod 35 is connected to a first drive device 33 and a second drive device 34. The introduction of connecting rods 35 makes the movement of the baffle 32 more stable and controllable. The movable portion of the connecting rod 35 can move smoothly within the fixed frame 31, avoiding the structural instability and imprecise movement that may result from directly connecting the baffle 32 to the drive device.

[0052] Each connecting rod 35 is connected to the first driving device 33 and the second driving device 34, so that the driving device can independently control the movement of the connecting rod 35, thereby driving the baffle 32 to adjust its position in different directions, thereby achieving precise shielding of the target material and precise control of the sputtering ratio.

[0053] In the above embodiment, the first drive device 33 and the second drive device 34 are driving elements that control the horizontal and vertical movement of the connecting rod 35, respectively. The first drive device 33 can be a motor that drives the connecting rod 35 horizontally through a gear rack. The second drive device 34 can also be a motor plus a gear rack structure. In actual operation, the second drive device 34 is required to drive the corresponding first drive device 33 and connecting rod 35 to move vertically synchronously.

[0054] In some preferred embodiments, the outer side of the rotating drum 21 is evenly arranged with multiple mounting surfaces 210, and multiple substrates 22 are spaced apart along the height direction on the mounting surfaces 210. The rotating drum 21 serves as a core component for support and rotation, securing the substrates 22 and continuously rotating during the coating process to ensure uniformity during the sputtering process. By evenly arranging multiple mounting surfaces 210 on the outer side of the rotating drum 21, each substrate 22 is ensured to receive the target material evenly during the sputtering process. This improves the uniformity of the doping ratio, preventing some substrates 22 from being excessively or insufficiently affected by sputtering, and thus achieving higher-quality thin films.

[0055] Multiple substrates 22 are arranged along the height direction, ensuring a certain spacing between them. By properly spacing the substrates 22, mutual obstruction is avoided, ensuring that each substrate 22 receives the sputtering target material evenly. As the drum 21 rotates, the substrates 22 continuously pass in front of the target sputtering source, ensuring that the surface of the substrates 22 is evenly covered with sputtering material, effectively reducing the gradient effect during the sputtering process and achieving a more uniform film doping ratio.

[0056] The application scenario of the present invention is the coating process of dual-target magnetron sputtering. Compared with other magnetron sputtering methods, this method uses two target materials, where the two target materials can use different raw materials, thereby achieving the purpose of coating multi-component optical films.

[0057] In order to achieve precise sputtering control of dual-target materials, the present invention also discloses a method for controlling the doping ratio of dual-target co-plating magnetron sputtering, which includes the following steps:

[0058] Step S1, set the sputtering distribution characteristics of target material A and target material B. The sputtering particle distribution of each target material is described by the Gaussian distribution function, where the center of the target material is the peak and the edge gradually decays, thereby defining the distribution width of the target material in the horizontal and vertical directions. Calculate the sputtering particle distribution function of target material A and target material B on the substrate when they are not blocked, which are Y and A (x TA ,y TA ) and Y B (x TB ,y TB ),in,

[0059]

[0060] Where Y 0A 、Y 0B is the maximum sputtering rate, which determines the sputtering intensity, exp is the exponential operation, σ xA and σ yA are the standard deviations of the sputtering distribution of target A in the x and y directions, σ xB and σ yB are the standard deviations of the sputtering distribution of target B in the x and y directions, respectively. TA and y TA Indicates the position coordinates of a point on the substrate surface of target A, x TB and y TB Indicates the position coordinates of a certain point of target B on the substrate surface.

[0061] Through these formulas, we can preliminarily calculate the distribution of sputtered particles generated by each target on the substrate when it is not blocked, which provides basic data for subsequent sputtering ratio adjustment.

[0062] S2. To control the sputtering ratio of target A and target B on the substrate, an occlusion function M(x, y, D) is designed. Its value depends on whether a certain point on the target surface is blocked. It is defined as follows:

[0063]

[0064] Among them, x and y are the coordinates of the baffle. Specifically, it can be understood that the point where the sputtered particles hit the substrate corresponds to the coordinates on the baffle, and D is the vertical distance from the target to the baffle. By setting the occlusion function, when a certain point (x, y) is blocked, the sputtered particles emitted by the target will not be able to reach the corresponding position on the substrate, thereby reducing the sputtering density at that point.

[0065] Define the occlusion functions of target A and target B as M respectively A (x TA ,y TA ) and M B (x TB ,y TB ) to adjust the effective sputtering area of ​​targets A and B, thereby controlling the total sputtering amount of each. The introduction of the shielding function allows for local adjustments along the target sputtering path, precisely controlling the total sputtering amount of targets A and B. The shielding function effectively limits the distribution area of ​​sputtered particles, thus directly affecting the film doping ratio. By adjusting the shielding position of the baffle, the distribution and density of the sputtered particles can be adjusted.

[0066] S3. Under the condition of target material shielding, calculate the actual total amount Q of target material A and target material B on the substrate by integral solution. A and Q B , through the formula The coordinates x and y of the baffle in the occlusion function M(x, y, D) are iteratively optimized to determine the optimal baffle position and shape that meets the target ratio. In the formula, α is the ratio of substance A to substance B in the film, which is a preset value.

[0067] In practical applications, the total amount of sputtering of the target material is affected by the occlusion function, so the actual total amount of sputtering Q of target material A and target material B can be obtained by integral calculation. A and Q B The ratio of substance A to substance B in the film can be calculated using the formula α = QA / QB. If this ratio does not meet the preset target, the system will further adjust the occlusion function through iterative optimization.

[0068] The core of this process is to repeatedly optimize the baffle position and shape to adjust the sputtering ratio of targets A and B, so that the material ratio α of A to B in the final film reaches the target set value. By adjusting the baffle coordinates x and y, the doping ratio of the film can be further precisely controlled to ensure that the sputtering ratio of the two materials meets the requirements.

[0069] S4. According to the calculation results, by adjusting the shielding area of ​​the baffle, the effective sputtering area of ​​target materials A and B is adjusted respectively, so as to accurately control the doping ratio of the thin film.

[0070] The present invention provides preliminary data for subsequent calculations by setting the sputtering distribution characteristics of target materials A and target materials B, ensuring the controllability of the sputtering process, designing a shielding function, and using the position of the baffle to adjust the effective sputtering area of ​​target materials A and target materials B to achieve regulation of the sputtering ratio. The actual total sputtering amount of target materials A and B is calculated by integration, and the material ratio of A to B in the film is accurately controlled through iterative optimization. The baffle shielding area is adjusted according to the optimization results, and the doping ratio of the film is accurately controlled to ensure that the material performance meets the requirements.

[0071] In this embodiment, the Gaussian distribution function in step S1 is obtained by experimentally measuring the specific sputtering amount of the target material, recording the sputtering particle distribution data of different areas on the target surface, and fitting the experimental data using a nonlinear regression or fitting method. The sputtering distribution characteristics of the target material are determined by its width e and length d, which limit the spatial range of the sputtering particle distribution.

[0072] The actual sputtering distribution may be affected by many factors (such as target surface characteristics, sputtering angle, current, etc.). Therefore, simply relying on theoretical models may not fully reflect the actual process. By experimentally measuring the sputtering particle distribution data in different areas of the target surface, more accurate sputtering distribution information can be obtained. This data will serve as the basis for model fitting to ensure that the Gaussian distribution function used can truly reflect the physical phenomena of the sputtering process. During the experiment, a sensor or probe can be used to scan the target surface and record the sputtering particle density at different locations. These experimental data provide practical and reliable data support for the fitting of the Gaussian distribution.

[0073] The Gaussian distribution is a nonlinear function, so it is necessary to match the experimental data with the Gaussian distribution model through nonlinear regression or fitting methods. This can be optimized through methods such as least squares estimation and maximum likelihood estimation, so that the fitted Gaussian function can reflect the actual sputtering distribution as accurately as possible. Through fitting, the sputtering distribution characteristics of the target material can be described by width e and length d. These parameters (e and d) limit the spatial distribution range of the sputtered particles, allowing the particle concentration during the sputtering process to be more accurately controlled.

[0074] The sputtering distribution function obtained through experimental fitting not only describes the distribution intensity of the particles, but also determines the spatial range of the particle distribution through e and d. This spatial range limits the distribution of particle concentration on the substrate surface, which in turn affects the doping ratio and uniformity of the film. Controlling the distribution range of sputtered particles can affect the proportion of each component in the film at the microscopic level. In practical applications, the distribution of sputtered particles of the target material does not extend infinitely, but is within a limited area. By limiting the width and length of the Gaussian distribution, the uniformity of the sputtering process can be effectively adjusted to avoid excessive or insufficient deposition in certain areas, thereby improving the control accuracy of the film quality and doping ratio.

[0075] The experimentally derived Gaussian distribution parameters (e and d) directly influence the optimization of the occlusion function M(x, y, D). By precisely controlling the distribution of the sputtered particles, the position and shape of the baffle can be further adjusted, thereby precisely controlling the effective sputtering area of ​​each target and ultimately achieving the desired doping ratio.

[0076] By incorporating experimental measurements and nonlinear regression fitting, the Gaussian distribution function is optimized using actual sputtering particle distribution data, thereby accurately describing the target's sputtering distribution characteristics. This approach allows the sputtering distribution of targets A and B to more accurately align with the actual process, providing more precise doping ratio control. This design not only improves the accuracy of sputtering control but also optimizes the adjustability of the doping ratio across the entire film, ensuring uniform and consistent film quality.

[0077] As some preferred embodiments, the present invention discloses a method for calculating the total amount of sputtering of target A and target B after shielding, specifically, respectively:

[0078]

[0079] The above total sputtering amount is calculated by double integration of the sputtering distribution function of targets A and B. The integration area is limited to the physical size range of the target, e A and d A Respectively represent the width and length of target A, defining the physical size of target A, e B and d B represent the width and length of the target B respectively.

[0080] The sputtering distribution of each target (Y A and Y B ) multiplied by the occlusion function (M A and M B ) to account for the occlusion effect. The occlusion function affects the sputtering path from the target to the substrate. If a certain position is blocked, the sputtering amount will be reduced (that is, the occlusion function is 0), otherwise the sputtering amount is normal (the occlusion function is 1).

[0081] dx TA and dy TA are the differential elements of target A along the x-axis and y-axis directions, dx TB and dy TB are the differential elements of target B integrated along the x-axis and y-axis respectively.

[0082] ρ A and ρ Brespectively, represent the vertical distance from the target materials A and B to the substrate, which affects the propagation path length of sputtered particles and thus the intensity of sputtering onto the substrate. In calculation, it is taken as a constant in the formula to adjust the intensity of sputtering.

[0083] Masking function M A (x TA ,y TA ,D) and M B (x TB ,y TB ,D) control the intensity of sputtered particles at different positions on the substrate. Through the masking function, the influence of factors such as baffles and equipment layout on sputtering distribution can be simulated to adjust the doping ratio.

[0084] By adjusting the physical dimensions (e A ,d A ,e B ,d B ) of the target materials and the distance (p A ,ρ B ) from the substrate, the sputtering intensity in different areas can be controlled to achieve precise control of the doping ratio. The combination of these factors determines the proportion of substances sputtered onto each point on the substrate and is an important basis for achieving co-deposition control.

[0085] The total amount of sputtering of target materials A and B considering the influence of the shielding assembly is calculated by integration. By precisely adjusting the physical dimensions (such as width e, length d) of the target materials and the sputtering distribution functions (Y A and Y B ), as well as the position on the surface of the target materials and the distance (p A and p B ) from the substrate to the target materials, this method can achieve precise control of the sputtering area. Ultimately, the formula can optimize the doping ratio to ensure that the sputtering amount in different areas meets the predetermined requirements, thereby achieving efficient and precise control of the sputtering process.

[0086] As some preferred embodiments, in step S4, the positions of the baffles in the shielding assembly are dynamically adjusted by the control system. In the x direction, the horizontal movement of each baffle is controlled by the first driving device to adjust the shielding area of the target material surface in the x direction. In the y direction, the vertical movement of each baffle is controlled by the second driving device to adjust the shielding area of the target material surface in the y direction. The position of each baffle is dynamically adjusted according to the sputtering distribution of the target material and the shielding requirement to ensure that the sputtering amount in each area meets the doping ratio requirement, achieve precise control of the sputtering area, and optimize the adjustment of the doping ratio.

[0087] Through this precise control, it is possible to ensure that the sputtering amount of the target material in different areas meets the predetermined doping ratio requirements. Changes in the shielding area directly affect the sputtering distribution, thereby adjusting the required doping ratio. The role of the shielding component is to adjust the final film composition by dynamically changing the sputtering amount of each area. This method can not only optimize the doping ratio in real time, but also better cope with changes in actual operations. This dynamic adjustment method allows the adjustment of the shielding area to be more finely matched to the actual doping requirements, further improving the control accuracy during the sputtering process and ensuring the uniformity and consistency of the doping ratio.

[0088] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A method for controlling doping ratio of dual-target co-plating magnetron sputtering, characterized in that: The steps are as follows: S1. Set the sputtering distribution characteristics of target material A and target material B. The sputtering particle distribution of each target material is described according to the Gaussian distribution function. Calculate the sputtering particle distribution function of target material A and target material B on the substrate when they are not blocked. They are: and ,in, ； ； In the formula Y 0A 、Y 0B is the maximum sputtering rate, is the exponential operation, σ xA and σ yA are the standard deviations of the sputtering distribution of target A in the x and y directions, σ xB and σ yB are the standard deviations of the sputtering distribution of target B in the x and y directions, x TA and y TA Indicates the position coordinates of a point on the substrate surface of target A, x TB and y TB Indicates the position coordinates of a certain point of target B on the substrate surface; S2. To control the sputtering ratio of target A and target B on the substrate, an occlusion function M(x, y, D) is designed. Its value depends on whether a certain point on the target surface is blocked. It is defined as follows: ； Where x, y are the coordinates of the baffle, and D is the vertical distance from the target to the baffle; Define the occlusion functions of target A and target B as M respectively A (x TA ,y TA ) and M B (x TB ,y TB ) to adjust the effective sputtering area of ​​targets A and B, thereby controlling the total amount of sputtering of each; S3. Under the condition of target material shielding, calculate the actual total amount of sputtering of target material A and target material B on the substrate by integral solution. and , through the formula The optimal baffle position and shape that meets the target ratio are determined by iteratively optimizing the coordinates x and y of the baffle in the occlusion function M(x,y,D), where α is the ratio of substance A to substance B in the film, which is a preset value. S4. According to the calculation results, by adjusting the shielding area of ​​the baffle, the effective sputtering area of ​​target materials A and B is adjusted respectively, thereby accurately controlling the doping ratio of the thin film; The dual-target co-plating magnetron sputtering doping ratio control method utilizes a dual-target co-plating magnetron sputtering doping ratio control device, which includes: A target assembly (1), comprising a first target (11) and a second target (12), wherein the first target (11) and the second target (12) are arranged side by side; A coating assembly (2) is located on one side of the target assembly (1), the coating assembly (2) comprising a rotating drum (21) and a plurality of substrates (22) evenly arranged on the outer wall of the rotating drum (21), the rotating drum (21) being vertically located at the center of the first target (11) and the second target (12); A shielding assembly (3) is located between the target assembly (1) and the coating assembly (2), and is symmetrically arranged relative to the central axis of the rotating drum (21). The shielding assembly (3) includes a fixed frame (31), a baffle (32) and a first driving device (33). A plurality of baffles (32) are arranged at intervals along the height direction of the inner side of the fixed frame (31). A plurality of first driving devices (33) are arranged on the fixed frame (31), and are respectively used to drive the corresponding baffles (32) to move in the horizontal direction, so as to adjust the position of the baffles (32) in the horizontal direction to shield the target; It also includes a control system, which dynamically adjusts the shielding range of the baffle (32) on each shielding component (3) according to a preset doping ratio, so that the doping ratio meets the requirements.

2. The method for controlling the doping ratio of dual-target co-plating magnetron sputtering according to claim 1, wherein: The shielding assembly (3) further comprises a second driving device (34). A plurality of second driving devices (34) are provided on the fixing frame (31) and are respectively used to drive the corresponding baffles (32) to move in the vertical direction, so as to adjust the position of the baffles (32) in the vertical direction to shield the target material.

3. The method for controlling the doping ratio of dual-target co-plating magnetron sputtering according to claim 2, wherein: The shielding assembly (3) further comprises a connecting rod (35), one end of which is fixedly connected to the baffle (32) and the other end of which movably passes through the fixing frame (31), and each connecting rod (35) is respectively connected to a first driving device (33) and a second driving device (34).

4. The method for controlling doping ratio of dual-target co-plating magnetron sputtering according to claim 1, wherein: A plurality of mounting surfaces (210) are evenly arranged on the outer side surface of the rotating drum (21), and a plurality of base plates (22) are spaced apart on the mounting surface (210) along the height direction.

5. The method for controlling the doping ratio of dual-target co-plating magnetron sputtering according to claim 1, wherein: The Gaussian distribution function in step S1 is obtained by measuring the specific sputtering amount of the target material through experiments, recording the sputtering particle distribution data of different areas on the target surface, and fitting the experimental data using nonlinear regression or fitting methods. The sputtering distribution characteristics of the target material are determined by its width. e and length d Determine and limit the spatial range of sputtered particle distribution.

6. The method for controlling the doping ratio of dual-target co-plating magnetron sputtering according to claim 1, wherein: The total amount of sputtering of target A and target B after shielding is: ； in, ρ A and ρ B Respectively represent the vertical distances from target A and target B to the substrate, and are used as constants in the calculation. e A and d A Respectively represent the width and length of target A, defining the physical size of target A. e B and d B Represent the width and length of target B, dx TA and dy TA are the differential elements of target A integrated along the x-axis and y-axis, dx TB and dy TB are the differential elements of target B integrated along the x-axis and y-axis respectively.

7. The method for controlling the doping ratio of dual-target co-plating magnetron sputtering according to claim 1, wherein: In step S4, the position of the baffle in the shielding assembly is dynamically adjusted through the control system. In the x-direction, the horizontal movement of each baffle is controlled by the first driving device, thereby adjusting the shielding area of ​​the target surface in the x-direction. In the y-direction, the vertical movement of each baffle is controlled by the second driving device, thereby adjusting the shielding area of ​​the target surface in the y-direction. The position of each baffle is dynamically adjusted according to the sputtering distribution and shielding requirements of the target material, ensuring that the sputtering amount in each area meets the doping ratio requirements, realizing precise control of the sputtering area, and optimizing the adjustment of the doping ratio.

Images