Single crystal furnace

Abstract

The embodiment of the invention relates to the technical field of monocrystalline silicon production, and provides a single crystal furnace which comprises an auxiliary furnace chamber, a lifting device and a gas distribution device, the lifting device is arranged at the upper end of the auxiliary furnace chamber and comprises a lifting piece, and the lifting piece is used for lifting a crystal bar; the gas distribution device is arranged in the upper end of the auxiliary furnace chamber so that inert gas can be guided into the auxiliary furnace chamber through the gas distribution device, the gas distribution device is provided with an avoiding structure allowing the lifting part to penetrate through, the gas distribution device is provided with a gas flow channel allowing the inert gas to circulate, and the gas flow channel comprises a plurality of gas outlet sections extending in the vertical direction. And the lower ends of the plurality of gas outlet sections penetrate through the gas distribution device to form a plurality of downward gas outlets, so that inert gas in the gas flow channel flows out from the plurality of gas outlets respectively. The single crystal furnace provided by the embodiment of the invention is at least beneficial to improving the yield of crystal bars and improving the quality of the crystal bars.

Description

Technical Field

[0001] The embodiments of the present disclosure relate to the technical field of single crystal silicon production, and in particular to a single crystal furnace. Background Art

[0002] In the production of single crystal silicon rods for solar photovoltaics, the CZ method (Czochralski, direct-pull single crystal manufacturing method) is used to grow single crystal silicon rods, and the key equipment for the growth of single crystal silicon rods is the single crystal furnace. During the growth of single crystal silicon rods, inert gases such as argon are introduced into the single crystal furnace to prevent the materials in the furnace from being oxidized, and at the same time, the inert gas is used to take away the excess heat in the furnace. At present, the inert gas enters the single crystal furnace from the top of the single crystal furnace, which easily forms turbulence in the top of the single crystal furnace. This situation not only affects the output of the crystal rod, but also affects the quality of the crystal rod. Summary of the invention

[0003] The embodiments of the present disclosure provide a single crystal furnace, which is at least beneficial to increasing the yield of crystal rods and improving the quality of crystal rods.

[0004] According to some embodiments of the present disclosure, on one hand, a single crystal furnace is provided, comprising:

[0005] Auxiliary furnace room;

[0006] A pulling device, the pulling device is arranged at the upper end of the auxiliary furnace chamber, the pulling device comprises a pulling member, and the pulling member is used to pull the crystal rod;

[0007] A gas separator is arranged in the upper end of the auxiliary furnace chamber to introduce inert gas into the auxiliary furnace chamber through the gas separator, the gas separator is provided with an avoidance structure for the lifting member to pass through, the gas separator is provided with an air flow channel for the inert gas to flow, the air flow channel includes a plurality of air outlet sections extending in the up and down directions, the lower ends of the plurality of air outlet sections penetrate the gas separator to form a plurality of downward air outlets, so that the inert gas in the air flow channel can flow out from the plurality of air outlets respectively.

[0008] In some embodiments, the plurality of gas outlet sections are arranged in multiple circles along the circumference of the auxiliary furnace chamber.

[0009] In some embodiments, the gas separation device includes a gas separation plate, and the gas separation plate is provided with avoidance holes running through it from top to bottom, the avoidance holes form the avoidance structure, and a plurality of the gas outlet sections are provided on the gas separation plate.

[0010] In some embodiments, the plurality of air outlets are disposed on the lower surface of the air distribution plate, and the lower surface of the air distribution plate is provided with a height difference structure so that the setting heights of the plurality of air outlets are gradually decreased in the direction from the middle to the edge of the air distribution plate.

[0011] In some embodiments, the lower surface of the gas distribution plate is provided with a conical groove with the notch facing downward, and the conical groove is arranged in a cone shape with a small upper part and a large lower part. The conical groove forms the height difference structure, and the plurality of air outlets are arranged on the side wall of the conical groove.

[0012] In some embodiments, the conical groove is arranged in a truncated cone shape, and the plurality of air outlets are arranged in multiple circles along the circumference of the conical groove, wherein:

[0013] The spacing between any two adjacent circles of the air outlets is equal; and / or,

[0014] The number of the air outlets in each circle of the air outlets is equal; and / or,

[0015] The air outlets in each circle of the air outlets are arranged at even intervals along the circumference of the tapered groove.

[0016] In some embodiments, the shape of the bottom wall of the tapered groove is adapted to the shape of the avoidance hole.

[0017] In some embodiments, the shape of the tapered groove matches the shape of the shoulder of the crystal rod.

[0018] In some embodiments, the lengths of the multiple air outlet sections are gradually increased in the direction from the middle to the edge of the air distribution plate; the air flow channel includes an air inlet section, and the air inlet section is arranged in plurality corresponding to the multiple air outlet sections, and each of the air inlet sections is connected to the upper end of a corresponding air outlet section to form an air flow sub-channel, so that the air flow channel forms a plurality of the air flow sub-channels; the lengths of the multiple air inlet sections are adapted to the lengths of the multiple air outlet sections, so that the lengths of the multiple air flow sub-channels are equal.

[0019] In some embodiments, upper ends of the plurality of gas outlet sections all penetrate the upper surface of the gas distribution plate.

[0020] In some embodiments, the pulling device also includes a pulling head, which is arranged at the upper end of the auxiliary furnace chamber, and the end of the pulling member away from the crystal rod is arranged on the pulling head to drive the pulling member through the pulling head, and the gas separation device is arranged on the pulling head.

[0021] The technical solution provided by the embodiments of the present disclosure has at least the following advantages:

[0022] In the single crystal furnace provided by the embodiment of the present disclosure, by redeveloping and designing the gas separation structure of the inert gas, a gas separation device is used to separate the inert gas entering the auxiliary furnace chamber, and the gas outlet section of the airflow channel of the gas separation device is arranged to be vertically downward. The vertically downward gas outlet section has a downward guiding effect on the inert gas, and stabilizes the flow rate of the inert gas flowing through the gas outlet section. After the inert gas passes through the guided and stabilized flow of the gas outlet section, the flow direction of the inert gas becomes parallel to the pulling piece, the crystal rod, and the inner furnace wall of the auxiliary furnace chamber and is blown vertically downward into the furnace, thereby avoiding direct collision between the airflow and the inner furnace wall of the auxiliary furnace chamber to generate turbulence. This can not only reduce the blowing of inert gas on the crystal rod and pulling parts, thereby reducing crystal shaking and arcing caused by inert gas, and reducing safety accidents such as rod explosion and rod dropping caused by crystal shaking, thus increasing the output of crystal rods; it can also reduce the turbulence of inert gas in the single crystal furnace, and reduce impurities brought into the molten silicon liquid due to turbulence, thereby reducing the impact of impurities on the quality of the crystal rod, increasing the minority carrier life of the crystal rod, and improving battery efficiency, thus improving the quality of the crystal rod. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] One or more embodiments are exemplarily illustrated by pictures in the corresponding drawings, and these exemplified descriptions do not constitute a limitation on the embodiments. Unless otherwise specified, the pictures in the drawings do not constitute a scale limitation. In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the traditional technology, the drawings required for use in the embodiments are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0024] Figure 1 It is a flow path diagram of the single crystal furnace in the prior art;

[0025] Figure 2 A schematic diagram of the structure of a single crystal furnace provided in one embodiment of the present disclosure;

[0026] Figure 3 for Figure 2 Airflow path diagram of the single crystal furnace. DETAILED DESCRIPTION

[0027] As can be seen from the background technology, the inert gas inlet of the existing single crystal furnace is fed by a main pipeline. Figure 1After two diversions by the diverter plate 2a in the auxiliary furnace chamber 1a of the single crystal furnace, the gas is purged radially from the edge of the gas diverter plate 2a to the surroundings in a direction perpendicular to the lifting rope 3a, and the gas flow is blown vertically to the inner furnace wall of the auxiliary furnace chamber 1a, and then returned from the inner furnace wall of the auxiliary furnace chamber 1a to act on the surface of the lifting rope 3a and the formed crystal rod 4a. In the process of the inert gas returning from the inner furnace wall of the auxiliary furnace chamber 1a to the lifting rope 3a, a cyclone vortex will be formed, and the rotation of the crystal rod 4a will make the turbulent flow of the inert gas in the furnace more turbulent, which will seriously affect the growth of the head of the crystal rod 4a, causing the crystal head of the crystal rod 4a to shake and draw arcs, and the gas flow is blown vertically to the inner furnace wall of the auxiliary furnace chamber 1a, which is easy to bring more impurities into the molten silicon liquid. The above situation not only affects the yield of single crystal rods, but also affects the quality of the crystal rod 4a (for example, minority carrier lifetime, concentric circle ratio, etc.), and more seriously may cause safety accidents (for example, the crystal rod shakes and contacts the water cooling screen, resulting in rod explosion due to stress concentration; the crystal shaking produces a radial shear force on the fine crystals, causing the fine crystals to break and the rod to fall).

[0028] The present disclosure implements a single crystal furnace. By redeveloping and designing the gas separation structure of the inert gas, a gas separation device is used to separate the inert gas entering the auxiliary furnace chamber, and the gas outlet section of the airflow channel of the gas separation device is arranged to be vertically downward. The vertically downward gas outlet section has a downward guiding effect on the inert gas, and stabilizes the flow rate of the inert gas flowing through the gas outlet section. After the inert gas passes through the guided and stabilized flow of the gas outlet section, the flow direction of the inert gas becomes parallel to the pulling member, the crystal rod, and the inner furnace wall of the auxiliary furnace chamber, and is blown vertically downward into the furnace, thereby avoiding direct collision between the airflow and the inner furnace wall of the auxiliary furnace chamber to generate turbulence. This can not only reduce the blowing of inert gas on the crystal rod and pulling parts, thereby reducing crystal shaking and arcing caused by inert gas, and reducing safety accidents such as rod explosion and rod dropping caused by crystal shaking, thus increasing the output of crystal rods; it can also reduce the turbulence of inert gas in the single crystal furnace, and reduce impurities brought into the molten silicon liquid due to turbulence, thereby reducing the impact of impurities on the quality of the crystal rod, increasing the minority carrier life of the crystal rod, and improving battery efficiency, thus improving the quality of the crystal rod.

[0029] In the description of the embodiments of the present application, the technical terms "first", "second", etc. are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "multiple" is more than two, unless otherwise clearly and specifically defined. Similarly, "multiple groups" refers to more than two groups (including two groups), and "multiple pieces" refers to more than two pieces (including two pieces).

[0030] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0031] In the description of the embodiments of the present application, the term "and / or" is only a description of the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can represent: A exists, A and B exist at the same time, and B exists. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0032] In the description of the embodiments of the present application, the orientation or positional relationship indicated by the technical terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the embodiments of the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the embodiments of the present application. For example, if the device or element in the figure is inverted, then the element described as being "below" or "below" or "below" or "bottom" of other elements or features will be oriented "above" or "top" of the other elements or features. Therefore, the term "below" may cover both the above and below orientations depending on the context in which the term is used, which will be obvious to a person of ordinary skill in the art. The material can be oriented in other ways (e.g., rotated 90 degrees, inverted, flipped), and the spatially relative descriptors used herein can be interpreted accordingly.

[0033] In the description of the embodiments of the present application, unless otherwise clearly specified and limited, technical terms such as "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments of the present application can be understood according to the specific circumstances.

[0034] In the accompanying drawings corresponding to the embodiments of the present application, the thickness and area of ​​the layers are exaggerated for better understanding and ease of description. In addition, when describing that a component is "substantially" formed on another component, it means that the component is not formed on the entire surface (or front surface) of the other component, nor is it formed on a partial edge of the entire surface.

[0035] In the description of the embodiments of the present application, when a certain component "includes" another component, unless otherwise specified, other components are not excluded, and other components may be further included. A second component is formed or provided above or on the first component, or a second component is formed or provided on the surface of the first component, or a second component is formed or provided on one side of the first component, which may include an embodiment in which the first component and the second component are in direct contact, and may also include an embodiment in which an additional component may be provided between the first component and the second component, so that the first component and the second component may not be in direct contact. For the sake of simplicity and clarity, various components may be drawn arbitrarily in different proportions. In the accompanying drawings, some layers / components may be omitted for simplicity. Unless otherwise specified, a second component is formed or provided on the surface of the first component, which means that the first component is in direct contact with the second component. Among them, the above-mentioned "component" may refer to a layer, a film, an area, a part, a structure, etc.

[0036] The terms used in the description of the various embodiments described herein are only used to describe specific embodiments and are not intended to be limiting. As used in the description of the various embodiments described and in the appended claims, "the components" are also intended to include plural forms unless the context clearly indicates otherwise. Among them, components include components such as layers, films, regions, or plates.

[0037] The following will describe the various embodiments of the present disclosure in detail with reference to the accompanying drawings. However, it will be appreciated by those skilled in the art that in the various embodiments of the present disclosure, many technical details are provided in order to enable the reader to better understand the present disclosure. However, even without these technical details and various changes and modifications based on the following embodiments, the technical solutions claimed in the present disclosure can be implemented.

[0038] Figure 2 and Figure 3 A schematic diagram of the structure of a single crystal furnace provided in an embodiment of the present disclosure.

[0039] refer to Figure 2 and Figure 3The single crystal furnace 100 includes an auxiliary furnace chamber 1, a pulling device 2 and a gas separation device 3; the pulling device 2 is arranged at the upper end of the auxiliary furnace chamber 1, and the pulling device 2 includes a pulling member 21, and the pulling member 21 is used to pull the crystal rod 200; the gas separation device 3 is arranged in the upper end of the auxiliary furnace chamber 1, so as to introduce the inert gas into the auxiliary furnace chamber 1 through the gas separation device 3, and the gas separation device 3 is provided with a avoidance structure 31 for the pulling member 21 to pass through, and the gas separation device 3 is provided with an air flow channel 32 for the inert gas to flow, and the air flow channel 32 includes a plurality of gas outlet sections 321 extending in an up-and-down direction, and the lower ends of the plurality of gas outlet sections 321 penetrate the gas separation device 3 to form a plurality of downward gas outlets 322, so that the inert gas in the air flow channel 32 can flow out from the plurality of gas outlets 322 respectively.

[0040] Specifically, the single crystal furnace 100 includes a main furnace chamber 4 and an auxiliary furnace chamber 1. The upper end of the main furnace chamber 4 is connected to the lower end of the auxiliary furnace chamber 1. A crucible 5 and a heater 6 are arranged in the main furnace chamber 4. The pulling device 2 is arranged at the upper end of the auxiliary furnace chamber 1. The pulling device 2 includes a pulling member 21 and a pulling head 22. The pulling member 21 can be a pulling rope or a pulling rod, etc. The upper end of the pulling member 21 is arranged on the pulling head 22. The lower end of the pulling member 21 can be driven to rise and fall through the lifting head 22, so that the lower end of the pulling member 21 can be lowered from the auxiliary furnace chamber 1 into the main furnace chamber 4, and the lower end of the pulling member 21 can be raised from the main furnace chamber 4 and returned to the auxiliary furnace chamber 1.

[0041] After the polysilicon raw material is placed in the crucible 5, the polysilicon raw material in the crucible 5 is melted by the heater 6 to form molten silicon liquid 300, and then a seed crystal fixed at the lower end of the pulling member 21 is inserted into the surface of the molten silicon liquid 300. After the seed crystal and the molten silicon liquid 300 are fully melted, the seed crystal is slowly pulled upward by the pulling device 2, and the crystal rod 200 grows at the lower end of the seed crystal.

[0042] The gas separator 3 is arranged in the upper end of the auxiliary furnace chamber 1, and an air flow channel 32 is arranged inside the gas separator 3. The gas separator 3 is provided with an air inlet and an air outlet 322. The air inlet of the gas separator 3 is connected to the external inert gas supply pipeline so that inert gas such as argon can enter the single crystal furnace 100 through the gas separator 3. In this way, during the growth process of the crystal rod 200, inert gas can be introduced into the single crystal furnace 100 through the gas separator 3 to prevent the oxidation of the materials in the furnace, and at the same time, the inert gas can take away the excess heat in the furnace.

[0043] The auxiliary furnace chamber 1 is usually arranged in a cylindrical shape extending in the vertical direction, and the lifting member 21 is usually also arranged in the vertical direction. The inert gas can enter the airflow channel 32 from the air inlet, flow through the airflow channel 32, and then flow out of the airflow channel 32 from the multiple air outlets 322 to enter the auxiliary furnace chamber 1. The end of the airflow channel 32 is a plurality of air outlet sections 321 extending in the vertical direction, and the multiple air outlet sections 321 are arranged in a one-to-one correspondence with the multiple air outlets 322, and the lower end of each air outlet section 321 is connected to a corresponding air outlet 322. When the inert gas in the airflow channel 32 flows to the end of the airflow channel 32, the inert gas can be evenly diverted to multiple gas outlet sections 321, and the vertically downward gas outlet section 321 has a downward guiding effect on the inert gas, and stabilizes the flow rate of the inert gas flowing through the gas outlet section 321. Only after the inert gas passes through the guided steady flow of the gas outlet section 321 will it enter the auxiliary furnace chamber 1 from the multiple gas outlets 322.

[0044] The single crystal furnace 100 redevelops and designs the inert gas separation structure, adopts the gas separation device 3 to separate the inert gas entering the auxiliary furnace chamber 1, and sets the gas outlet section 321 of the airflow channel 32 of the gas separation device 3 to be vertically downward. The vertically downward gas outlet section 321 has a downward guiding effect on the inert gas, and stabilizes the flow rate of the inert gas flowing through the gas outlet section 321. After the inert gas passes through the guided steady flow of the gas outlet section 321, the flow direction of the inert gas becomes parallel to the pulling member 21, the crystal rod 200, and the inner furnace wall of the auxiliary furnace chamber 1, and is blown vertically downward into the furnace, thereby avoiding direct collision between the airflow and the inner furnace wall of the auxiliary furnace chamber 1 to generate turbulence. This can not only reduce the blowing of inert gas on the crystal rod 200 and the pulling member 21, thereby reducing crystal shaking and arcing caused by inert gas, and reducing safety accidents such as rod explosion and rod dropping caused by crystal shaking, thereby increasing the yield of crystal rod 200; it can also reduce the turbulence of inert gas in the single crystal furnace 100, and reduce impurities introduced into the molten silicon liquid 300 due to turbulence, thereby reducing the impact of impurities on the quality of the crystal rod 200, increasing the minority carrier lifetime of the crystal rod 200, and improving the battery efficiency, thereby improving the quality of the crystal rod 200.

[0045] The embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings.

[0046] The gas separation device 3 is arranged in the upper end of the auxiliary furnace chamber 1, and the specific location of the gas separation device 3 in the auxiliary furnace chamber 1 can be set according to actual conditions. For example, the gas separation device 3 can be arranged on the inner furnace wall of the auxiliary furnace chamber 1 or the top position of the auxiliary furnace chamber 1 such as the pulling device 2. Figure 2 and Figure 3In some embodiments, the pulling device 2 also includes a pulling head 22, which is disposed at the upper end of the auxiliary furnace chamber 1, and an end of the pulling member 21 away from the crystal rod 200 is disposed at the pulling head 22, so that the pulling member 21 is driven by the pulling head 22, and the gas distribution device 3 is disposed at the pulling head 22.

[0047] Specifically, the lower end of the lifting head 22 is located in the upper end of the auxiliary furnace chamber 1, and the gas separator 3 is arranged at the lower end of the lifting head 22, so that the gas separator 3 is arranged in the upper end of the auxiliary furnace chamber 1. Integrating the gas separator 3 on the lifting head 22 in this way can not only simplify the installation structure of the gas separator 3, but also reduce the installation restrictions of the top space of the auxiliary furnace chamber 1 on the gas separator 3, thereby facilitating the gas separator 3 to be arranged in the upper end of the auxiliary furnace chamber 1.

[0048] The specific material of the gas separator 3 may not be particularly limited. The gas separator 3 may be made of high pressure and corrosion resistant materials such as stainless steel. Optionally, in some embodiments, the gas separator 3 is made of 316 stainless steel.

[0049] The air flow channel 32 of the gas distribution device 3 has a plurality of gas outlet sections 321, and the arrangement of the plurality of gas outlet sections 321 can be set according to actual conditions. For example, the plurality of gas outlet sections 321 can be arranged in an array; the plurality of gas outlet sections 321 can also be arranged in one or more circles along the circumference of the auxiliary furnace chamber 1. Figure 2 and Figure 3 In some embodiments, the plurality of gas outlet sections 321 are arranged in multiple circles along the circumference of the auxiliary furnace chamber 1 .

[0050] Specifically, multiple gas outlet sections 321 are arranged in multiple circles along the circumference and radial direction of the auxiliary furnace chamber 1, thereby forming multiple circles of gas outlets 322 on the gas distribution device 3, so that the inert gas in the airflow channel 32 can be evenly diverted to the multiple gas outlet sections 321, and then evenly blown downward into the auxiliary furnace chamber 1 from the multiple gas outlets 322, so that the airflow distribution in the auxiliary furnace chamber 1 will be more uniform.

[0051] Optionally, refer to Figure 2 and Figure 3 In some embodiments, the gas distribution device 3 includes a gas distribution plate 33 , and the gas distribution plate 33 is provided with avoidance holes 31 a running through the upper and lower parts, the avoidance holes 31 a form an avoidance structure 31 , and a plurality of gas outlet sections 321 are provided on the gas distribution plate 33 .

[0052] Specifically, the gas distribution plate 33 is usually set in a disc shape, and a avoidance hole 31a is set through the middle of the gas distribution plate 33 from top to bottom. The lower end of the lifting member 21 passes through the gas distribution plate 33 from the avoidance hole 31a, so that the avoidance hole 31a forms the avoidance structure 31 of the gas distribution device 3. The specific shape of the avoidance hole 31a may not be particularly limited. For example, the avoidance hole 31a may be set in a circular hole, a square hole, a triangular hole, etc., and the following will take the gas distribution plate 33 as a circular plate and the avoidance hole 31a as a circular hole as an example for introduction.

[0053] A plurality of air outlet sections 321 are arranged on the air distribution plate 33, and the lower ends of the plurality of air outlet sections 321 penetrate the lower surface of the air distribution plate 33 to form a plurality of air outlets 322 on the lower surface of the air distribution plate 33. Thus, by separately arranging a plurality of air outlet sections 321 on an independent component air distribution plate 33, the processing difficulty of the plurality of air outlet sections 321 can be reduced, and the air distribution plate 33 has the advantages of simple structure, easy replacement, low processing difficulty, and low manufacturing cost.

[0054] The upper end of the gas outlet section 321 may or may not penetrate the upper surface of the gas distribution plate 33. Figure 2 and Figure 3 In some embodiments, the upper ends of the plurality of gas outlet sections 321 all penetrate the upper surface of the gas distribution plate 33 .

[0055] Specifically, the gas outlet section 321 is provided as a straight through hole that passes through the gas distribution plate 33 from top to bottom, and the plurality of gas outlet sections 321 are provided as a plurality of straight through holes. The processing difficulty of the straight through hole type gas outlet section 321 is relatively small.

[0056] Optionally, refer to Figure 2 and Figure 3 In some embodiments, a plurality of air outlets 322 are disposed on the lower surface of the air distribution plate 33, and a height difference structure 331 is disposed on the lower surface of the air distribution plate 33 so that the setting heights of the plurality of air outlets 322 are gradually decreased in a direction from the middle to the edge of the air distribution plate 33.

[0057] Specifically, the setting height of the gas outlet 322 is the vertical spacing between the gas outlet 322 and the preset lower reference plane, the preset lower reference plane is located at the lower side of the plurality of gas outlets 322, and the preset lower reference plane can be a vertical surface such as the bottom surface of the single crystal furnace 100. A plurality of gas outlets 322 are arranged on the lower surface of the gas distribution plate 33. Since a height difference structure 331 is arranged on the lower surface of the gas distribution plate 33, the height difference structure 331 can make the positions of the plurality of gas outlets 322 arranged on the lower surface of the gas distribution plate 33 unequal or incompletely equal to the vertical spacing between the preset lower reference plane, so that the setting heights of the plurality of gas outlets 322 are unequal or incompletely equal. Furthermore, the setting heights of the multiple air outlets 322 are gradually reduced in the direction from the central axis of the air distribution plate 33 to the edge of the air distribution plate 33, that is, the closer the air outlet 322 is to the central axis of the air distribution plate 33, the greater the setting height, and the closer the air outlet 322 is to the edge of the air distribution plate 33, the smaller the setting height.

[0058] The inert gas blown out from the multiple gas outlets 322 will blow the shoulder 210 of the crystal rod 200 downward, and the shoulder 210 of the crystal rod 200 is arranged in a conical column shape with a small upper part and a large lower part. By setting a height difference structure 331 on the lower surface of the gas distribution plate 33, the distance difference between the multiple gas outlets 322 and the shoulder 210 can be reduced. When the height difference structure 331 is arranged corresponding to the shoulder 210 of the crystal rod 200, the distance between the multiple gas outlets 322 and the shoulder 210 of the crystal rod 200 is equal or approximately equal, thereby ensuring that the distance from each gas outlet 322 to the shoulder 210 of the crystal rod 200 is equal, which can better reduce crystal shaking and arcing caused by the blowing of the inert gas.

[0059] The specific setting method of the height difference structure 331 can be set according to actual conditions. For example, a multi-step surface structure is set on the lower surface of the gas distribution plate 33, and multiple air outlets 322 are respectively set on different step surfaces. In this way, the multi-step surface structure forms a height difference structure 331.

[0060] Optionally, refer to Figure 2 and Figure 3 In some embodiments, a conical groove 331a with a notch facing downward is provided on the lower surface of the gas distribution plate 33. The conical groove 331a is arranged in a cone shape with a small upper part and a large lower part. The conical groove 331a forms a high-low drop structure 331, and a plurality of air outlets 322 are arranged on the side wall of the conical groove 331a.

[0061] Specifically, the lower surface of the gas distribution plate 33 is a shape with a high edge and an upwardly concave center, so that a tapered groove 331a is formed on the lower surface of the gas distribution plate 33, and the groove sidewall of the tapered groove 331a forms a height difference structure 331. In this way, the height difference structure 331 is formed by arranging the tapered groove 331a on the gas distribution plate 33, and this arrangement of the height difference structure 331 can reduce the processing difficulty of the height difference structure 331.

[0062] Optionally, refer to Figure 2 and Figure 3 In some embodiments, the shape of the tapered groove 331 a matches the shape of the shoulder 210 of the crystal ingot 200 .

[0063] Specifically, the conical groove 331a is a conical groove that matches the shape of the shoulder 210 of the crystal rod 200, thereby ensuring that the distance from each gas outlet 322 on the groove side wall of the conical groove 331a to the shoulder 210 of the crystal rod 200 is equal, which is beneficial to reducing crystal shaking and arcing caused by the blowing of inert gas.

[0064] The gas distribution plate 33 is provided with an avoidance hole 31a, which can be arranged on the bottom wall of the conical groove 331a; the avoidance hole 31a can also be arranged on the side wall of the conical groove 331a; the avoidance hole 31a can also be partially located on the bottom wall of the conical groove 331a, and the other part is located on the side wall of the conical groove 331a. Figure 2 and Figure 3 In some embodiments, the shape of the bottom wall of the tapered groove 331 a matches the shape of the avoidance hole 31 a.

[0065] Specifically, the avoidance hole 31a is arranged on the bottom wall of the conical groove 331a, and the shape of the avoidance hole 31a is adapted to the shape of the bottom wall of the conical groove 331a, so that the multiple gas outlets 322 on the side wall of the conical groove 331a can be evenly surrounded by the periphery of the avoidance hole 31a, so that the inert gas can be evenly blown from the multiple gas outlets 322 to the pulling member 21 passing through the avoidance hole 31a, and the crystal rod 200 pulled by the pulling member 21.

[0066] Optionally, refer to Figure 2 and Figure 3 In some embodiments, the conical groove 331a is arranged in a truncated cone shape, and the plurality of gas outlets 322 are arranged in a plurality of circles along the circumference of the conical groove 331a. In this way, the shape of the conical groove 331a can be adapted to the shape of the shoulder 210 of the crystal ingot 200, which is conducive to ensuring that the distances from the plurality of gas outlets 322 to the shoulder 210 of the crystal ingot 200 are equal.

[0067] Optionally, refer to Figure 2 and Figure 3In some embodiments, the spacing between any two adjacent circles of gas outlets 322 is equal. The multiple circles of gas outlets 322 on the gas distribution plate 33 are arranged at equal intervals in the radial direction of the gas distribution plate 33, so that the inert gas flow blown out from the multiple circles of gas outlets 322 can be evenly distributed in the radial direction of the gas distribution plate 33.

[0068] Optionally, refer to Figure 2 and Figure 3 In some embodiments, the number of the gas outlets 322 in each circle of the gas outlets 322 is equal. The multiple gas outlets 322 on the gas distribution plate 33 are evenly divided into multiple circles, so that each circle of the gas outlets 322 contains the same number of gas outlets 322, so that the gas flow rate of the inert gas blown out from each circle of the gas outlets 322 can be roughly equal, and the inert gas flow blown out from the multiple circles of the gas outlets 322 can be evenly distributed in the radial direction of the gas distribution plate 33.

[0069] Optionally, refer to Figure 2 and Figure 3 In some embodiments, the air outlets 322 in each circle of air outlets 322 are evenly spaced along the circumference of the conical groove 331a. The air outlets 322 in each circle of air outlets 322 are evenly spaced along the circumference of the air distribution plate 33, so that the airflow blown out from the multiple circles of air outlets 322 can be evenly distributed along the circumference of the air distribution plate 33.

[0070] Optionally, refer to Figure 2 and Figure 3 In some embodiments, the air outlets 322 in any two circles of the air outlets 322 are arranged opposite to each other in the radial direction of the air distribution plate 33 .

[0071] A large hole is formed in the center of the gas distributor 33 to form an avoidance hole 31a for passing the lifting member 21 and the weight to lift and rotate the crystal rod 200. The gas distributor 33 has a large hole as the center and evenly distributes vertical small holes to form a plurality of gas outlet sections 321 as gas flow channels for the inert gas.

[0072] Optionally, in other embodiments, the lengths of the multiple air outlet segments 321 are gradually increased in the direction from the middle to the edge of the air distribution plate 33; the air flow channel 32 includes an air inlet segment, and the air inlet segment is provided with multiple air outlet segments 321, each air inlet segment is connected to the upper end of a corresponding air outlet segment 321 to form an air flow sub-channel, so that the air flow channel 32 forms multiple air flow sub-channels; the lengths of the multiple air inlet segments are adapted to the lengths of the multiple air outlet segments 321, so that the lengths of the multiple air flow sub-channels are equal.

[0073] Specifically, the airflow channel 32 includes multiple air inlet sections and multiple air outlet sections 321, and the multiple air inlet sections and the multiple air outlet sections 321 are arranged in a one-to-one correspondence. One end of each air inlet section is connected to the air inlet of the gas distribution device 3, and the end of each air inlet section away from the air inlet is connected to the upper end of a corresponding air outlet section 321. Each air inlet section and a corresponding air outlet section 321 constitute an airflow sub-channel, so that multiple air inlet sections and multiple air outlet sections 321 constitute multiple airflow sub-channels. The lengths of the multiple airflow sub-channels are equal, so that the flow resistance of the multiple airflow sub-channels to the inert gas airflow is roughly equal, so that the inert gas entering the gas distribution plate 33 from the air inlet can be evenly distributed to the multiple airflow sub-channels, and finally evenly blown into the auxiliary furnace chamber 1 from the multiple air outlets 322.

[0074] The gas outlet section 321 of the gas separation device 3 has a downward guiding effect on the inert gas, and stabilizes the flow rate of the inert gas flowing through the gas outlet section 321. When the inert gas passes through the gas outlet section 321, its gas flow direction is changed, and the flow rate of the inert gas flowing through the gas outlet section 321 is stabilized. In this way, after the inert gas passes through the guiding and stabilizing flow of the gas outlet section 321, the flow direction of the inert gas becomes parallel to the lifting member 21, the crystal rod 200, and the inner furnace wall of the auxiliary furnace chamber 1, and blows vertically downward into the furnace, avoiding direct collision between the gas flow and the inner furnace wall of the auxiliary furnace chamber 1 to generate turbulence. In addition, the gas separation device 3 has the advantages of simple structure, easy replacement, low processing difficulty, and low manufacturing cost.

[0075] Those skilled in the art can understand that the above-mentioned embodiments are specific examples for realizing the present disclosure, and in practical applications, various changes can be made to them in form and details without departing from the spirit and scope of the present disclosure. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present disclosure, so the protection scope of the present disclosure shall be based on the scope defined in the claims.

Claims

1. A single crystal furnace, characterized in that: include: Auxiliary furnace room; A pulling device, the pulling device is arranged at the upper end of the auxiliary furnace chamber, the pulling device comprises a pulling member, and the pulling member is used to pull the crystal rod; A gas separator is arranged in the upper end of the auxiliary furnace chamber to introduce inert gas into the auxiliary furnace chamber through the gas separator, the gas separator is provided with an avoidance structure for the lifting member to pass through, the gas separator is provided with an air flow channel for the inert gas to flow, the air flow channel includes a plurality of air outlet sections extending in the up and down directions, the lower ends of the plurality of air outlet sections penetrate the gas separator to form a plurality of downward air outlets, so that the inert gas in the air flow channel can flow out from the plurality of air outlets respectively.

2. The single crystal furnace according to claim 1, characterized in that: The plurality of gas outlet sections are arranged in multiple circles along the circumference of the auxiliary furnace chamber.

3. The single crystal furnace according to claim 1 or 2, characterized in that: The gas distribution device comprises a gas distribution plate, and the gas distribution plate is provided with avoidance holes running through it from top to bottom, the avoidance holes form the avoidance structure, and a plurality of the gas outlet sections are provided on the gas distribution plate.

4. The single crystal furnace according to claim 3, characterized in that: The plurality of air outlets are arranged on the lower surface of the air distribution plate, and the lower surface of the air distribution plate is provided with a height difference structure so that the setting heights of the plurality of air outlets are gradually reduced in the direction from the middle to the edge of the air distribution plate.

5. The single crystal furnace according to claim 4, characterized in that: The lower surface of the gas distribution plate is provided with a tapered groove with the notch facing downwards. The tapered groove is arranged in a frustum shape with a small top and a large bottom. The tapered groove forms the height difference structure. The plurality of air outlets are arranged on the groove side wall of the tapered groove.

6. The single crystal furnace according to claim 5, characterized in that: The conical groove is arranged in a truncated cone shape, and the plurality of air outlets are arranged in multiple circles along the circumference of the conical groove, wherein: The spacing between any two adjacent circles of the air outlets is equal; and / or, The number of the air outlets in each circle of the air outlets is equal; and / or, The air outlets in each circle of the air outlets are arranged at even intervals along the circumference of the tapered groove.

7. The single crystal furnace according to claim 5, characterized in that: The shape of the bottom wall of the tapered groove matches the shape of the avoidance hole; and / or, The shape of the tapered groove matches the shape of the shoulder of the crystal rod.

8. The single crystal furnace according to claim 4, characterized in that: The lengths of the multiple air outlet sections are gradually increased in the direction from the middle to the edge of the air distribution plate; the air flow channel includes an air inlet section, and the air inlet section is arranged in plurality corresponding to the multiple air outlet sections, each of the air inlet sections is connected to the upper end of a corresponding air outlet section to form an air flow sub-channel, so that the air flow channel forms multiple air flow sub-channels; the lengths of the multiple air inlet sections are adapted to the lengths of the multiple air outlet sections, so that the lengths of the multiple air flow sub-channels are equal.

9. The single crystal furnace according to claim 3, characterized in that: The upper ends of the plurality of gas outlet sections all penetrate the upper surface of the gas distribution plate.

10. The single crystal furnace according to claim 1, characterized in that: The pulling device also includes a pulling head, which is arranged at the upper end of the auxiliary furnace chamber, and one end of the pulling member away from the crystal rod is arranged on the pulling head to drive the pulling member through the pulling head, and the gas distribution device is arranged on the pulling head.

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