Temperature control method, electronic equipment, medium and program product

Abstract

The invention belongs to the technical field of semiconductors, and particularly relates to a temperature control method, electronic equipment, a medium and a program product. The current preparation stage is determined in the single crystal silicon preparation process, the single crystal silicon preparation process comprises the following preparation stages according to the time sequence: a preheating stage, a melting stage, a drawing stage and a cooling stage, a temperature control algorithm and a target temperature corresponding to the current preparation stage are determined, and the target temperature is controlled by the temperature control algorithm and the target temperature in the current preparation stage. Controlling the temperature of the crucible by adopting a temperature control algorithm according to the target temperature; according to the method, in the monocrystalline silicon preparation process, the temperature of the crucible is regulated and controlled by identifying the current preparation stage and applying the corresponding temperature control algorithm and the target temperature, and the service life of the crucible is prolonged.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a temperature control method, electronic equipment, medium and program product. Background Art

[0002] In the preparation process of single crystal silicon, the crucible is a key container for containing the melt, and the life of the crucible affects the production efficiency of single crystal silicon.

[0003] At present, in the high-temperature environment of single-crystal silicon preparation, the crucible will produce thermal stress inside due to large temperature fluctuations, causing the crucible to deform, crack or even break.

[0004] Therefore, the crucible has the problems of short life and easy damage in the process of preparing single crystal silicon, and a process method that can effectively extend the service life of the crucible is needed. Summary of the invention

[0005] The embodiments of the present application provide a temperature control method, an electronic device, a medium and a program product to solve the problem that the crucible has a short life and is easily damaged during the preparation of single crystal silicon.

[0006] In a first aspect, an embodiment of the present application provides a temperature control method, comprising:

[0007] In the single crystal silicon preparation process, determining the current preparation stage, wherein the single crystal silicon preparation process includes the following preparation stages in chronological order: a preheating stage, a melting stage, a pulling stage, and a cooling stage;

[0008] Determine the temperature control algorithm and target temperature corresponding to the current preparation stage;

[0009] In the current preparation stage, the crucible temperature is controlled using the temperature control algorithm according to the target temperature.

[0010] Optionally, the determining of the temperature control algorithm corresponding to the current preparation stage includes any one or more of the following:

[0011] When the current preparation stage is the preheating stage, determining that the temperature control algorithm corresponding to the preheating stage is a proportional-integral-differential algorithm;

[0012] When the current preparation stage is the melting stage, determining that the temperature control algorithm corresponding to the melting stage is a fuzzy control algorithm;

[0013] In the case where the current preparation stage is the drawing stage, determining that the temperature control algorithm corresponding to the drawing stage is a model predictive control algorithm;

[0014] When the current preparation stage is the cooling stage, it is determined that the temperature control algorithm corresponding to the cooling stage is a decreasing proportional integral differential algorithm.

[0015] Optionally, when the current preparation stage is the preheating stage, controlling the crucible temperature by using the temperature control algorithm according to the target temperature includes:

[0016] Determining a proportional term, an integral term and a differential term in the proportional-integral-differential algorithm according to a difference between the current temperature and the target temperature;

[0017] A first heating power is determined according to a proportional term, an integral term and a differential term in the proportional-integral-differential algorithm, and heating is controlled based on the first heating power.

[0018] Optionally, when the current preparation stage is a melting stage, controlling the crucible temperature by using the temperature control algorithm according to the target temperature includes:

[0019] Determine a real-time temperature error and a temperature error change rate according to the current temperature and the target temperature;

[0020] Determine a first fuzzy subset and a first membership corresponding to the temperature error, and a second fuzzy subset and a second membership corresponding to the temperature error change rate, and determine a third fuzzy subset and a third membership corresponding to the heating power according to the first fuzzy subset, the first membership, the second fuzzy subset, the second membership, and a preset fuzzy rule, wherein the fuzzy rule characterizes the correspondence between the temperature error fuzzy subset, the temperature error change rate fuzzy subset, and the heating power fuzzy subset;

[0021] The third fuzzy subset and the third membership degree are converted into a second heating power, and heating is controlled based on the second heating power.

[0022] Optionally, when the current preparation stage is the drawing stage, controlling the crucible temperature by using the temperature control algorithm according to the target temperature includes:

[0023] A model predictive control algorithm is adopted to predict the third heating power at the next moment based on the current temperature, the target temperature and the current heating power, and the heating is controlled based on the third heating power.

[0024] Optionally, when the current preparation stage is the cooling stage, controlling the crucible temperature by using the temperature control algorithm according to the target temperature includes:

[0025] Determining the proportional term, the integral term and the differential term in the decreasing proportional integral differential algorithm according to the difference between the current temperature and the target temperature;

[0026] The flow rate and / or temperature of the cooling medium is determined according to the proportional term, the integral term and the differential term in the decreasing proportional integral differential algorithm, and the operation of the cooling system is controlled based on the flow rate and / or the temperature of the cooling medium.

[0027] In a second aspect, an embodiment of the present application provides a temperature control device, comprising:

[0028] A determination module is used to determine the current preparation stage in the single crystal silicon preparation process, wherein the single crystal silicon preparation process includes the following preparation stages in chronological order: a preheating stage, a melting stage, a pulling stage, and a cooling stage;

[0029] The determination module is further used to determine a temperature control algorithm and a target temperature corresponding to the current preparation stage;

[0030] The control module is used to control the crucible temperature according to the target temperature using the temperature control algorithm in the current preparation stage.

[0031] Optionally, the determination module is further configured to, when the current preparation stage is the preheating stage, determine that the temperature control algorithm corresponding to the preheating stage is a proportional-integral-differential algorithm;

[0032] The determination module is further configured to determine, when the current preparation stage is the melt stage, that the temperature control algorithm corresponding to the melt stage is a fuzzy control algorithm;

[0033] The determination module is further configured to determine, when the current preparation stage is the drawing stage, that the temperature control algorithm corresponding to the drawing stage is a model predictive control algorithm;

[0034] The determination module is further configured to determine, when the current preparation stage is the cooling stage, that the temperature control algorithm corresponding to the cooling stage is a decreasing proportional integral differential algorithm.

[0035] Optionally, the determination module is further used to determine the proportional term, the integral term and the differential term in the proportional-integral-differential algorithm according to the difference between the current temperature and the target temperature;

[0036] The determination module is further used to determine the first heating power according to the proportional term, the integral term and the differential term in the proportional-integral-differential algorithm;

[0037] The control module is further used to control heating based on the first heating power.

[0038] Optionally, the determination module is further used to determine a real-time temperature error and a temperature error change rate according to the current temperature and the target temperature;

[0039] The determination module is further used to determine a first fuzzy subset and a first membership corresponding to the temperature error, and a second fuzzy subset and a second membership corresponding to the temperature error change rate, and determine a third fuzzy subset and a third membership corresponding to the heating power according to the first fuzzy subset, the first membership, the second fuzzy subset, the second membership, and a preset fuzzy rule, wherein the fuzzy rule characterizes the correspondence between the temperature error fuzzy subset, the temperature error change rate fuzzy subset, and the heating power fuzzy subset;

[0040] The determination module is further used to convert the third fuzzy subset and the third membership degree into a second heating power;

[0041] The control module is further used to control heating based on the second heating power.

[0042] Optionally, the determination module is further configured to adopt a model predictive control algorithm to predict the third heating power at the next moment based on the current temperature, the target temperature and the current heating power;

[0043] The control module is further used to control heating based on the third heating power.

[0044] Optionally, the determination module is further used to determine the proportional term, the integral term and the differential term in the decreasing proportional integral differential algorithm according to the difference between the current temperature and the target temperature;

[0045] The determination module is further used to determine the flow rate and / or temperature of the cooling medium according to the proportional term, the integral term and the differential term in the decreasing proportional integral differential algorithm;

[0046] The control module is further used to control the operation of the cooling system based on the flow rate and / or temperature of the cooling medium.

[0047] In a third aspect, an embodiment of the present application provides a temperature control device, including: a memory, a processor;

[0048] The memory stores computer-executable instructions;

[0049] The processor executes the computer-executable instructions stored in the memory, so that the processor executes the above first aspect and / or various possible implementations of the first aspect.

[0050] In a fourth aspect, an embodiment of the present application provides a computer-readable storage medium, in which computer-executable instructions are stored. When the computer-executable instructions are executed by a processor, they are used to implement the first aspect above and / or various possible implementations of the first aspect.

[0051] In a fifth aspect, an embodiment of the present application provides a computer program product, including a computer program, which, when executed by a processor, implements the above first aspect and / or various possible implementation methods of the first aspect.

[0052] The temperature control method provided in the embodiment of the present application determines the current preparation stage in the single crystal silicon preparation process, wherein the single crystal silicon preparation process includes the following preparation stages in chronological order: a preheating stage, a melting stage, a drawing stage and a cooling stage, determines the temperature control algorithm and the target temperature corresponding to the current preparation stage, and controls the crucible temperature according to the target temperature using the temperature control algorithm in the current preparation stage; in the single crystal silicon preparation process, the method controls the crucible temperature by identifying the current preparation stage and applying the corresponding temperature control algorithm and target temperature, thereby extending the service life of the crucible. BRIEF DESCRIPTION OF THE DRAWINGS

[0053] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0054] Figure 1 A flow chart of the temperature control method provided in this application;

[0055] Figure 2 A schematic diagram of the structure of the temperature control device provided in this application;

[0056] Figure 3 This is a schematic diagram of the structure of the temperature control device provided in this application.

[0057] The above drawings have shown clear embodiments of the present application, which will be described in more detail later. These drawings and text descriptions are not intended to limit the scope of the present application in any way, but to illustrate the concept of the present application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0058] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the present application. Instead, they are merely examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.

[0059] It should be noted that the user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data used for analysis, stored data, displayed data, etc.) involved in this application are all information and data authorized by the user or fully authorized by all parties, and the collection, use and processing of relevant data must comply with relevant laws, regulations and standards, and provide corresponding operation entrances for users to choose to authorize or refuse.

[0060] In the preparation process of single crystal silicon, the crucible is a key container for carrying the melt, and the life of the crucible will affect the production efficiency of single crystal silicon.

[0061] At present, in the high-temperature environment of single-crystal silicon preparation, the crucible will produce thermal stress inside due to the large temperature fluctuations. This thermal stress will cause the crucible structure to change, resulting in deformation, cracks and even complete rupture.

[0062] Therefore, the crucible has problems such as short life and easy damage during the preparation of single crystal silicon, and a process method that can effectively extend the service life of the crucible is needed.

[0063] In response to the above problems, the temperature control method provided in the present application identifies the current preparation stage (preheating, melting, pulling or cooling) in the single crystal silicon preparation process, and for each stage, selects a temperature control algorithm and target temperature that matches it to regulate the crucible temperature; this method effectively reduces the thermal stress of the crucible caused by temperature changes by implementing targeted temperature control strategies at different preparation stages, thereby extending the service life of the crucible.

[0064] The technical solution of the present application and how the technical solution of the present application solves the above-mentioned technical problems are described in detail below with specific embodiments. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be repeated in some embodiments. The embodiments of the present application will be described below in conjunction with the accompanying drawings.

[0065] Figure 1 The process of the temperature control method provided in this application Figure 1 The execution subject of this embodiment is, for example, a temperature control system. Figure 1 As shown, the temperature control method shown in this embodiment includes:

[0066] S101: In the single crystal silicon preparation process, determine the current preparation stage, wherein the single crystal silicon preparation process includes the following preparation stages in chronological order: a preheating stage, a melting stage, a pulling stage, and a cooling stage.

[0067] The preheating stage is an important step before the crucible is officially used for single crystal silicon preparation. The main purpose of this stage is to gradually increase the temperature of the crucible to a preset safety level below its normal operating temperature without load. This can avoid physical damage to the crucible caused by sudden high temperature changes (i.e. thermal shock), such as cracking, deformation or premature aging.

[0068] The melt stage is the process of heating the melt above its melting point to transform it into a liquid state. In the melt stage, the temperature needs to be gradually increased so that the melt can gradually soften and eventually reach the melting point.

[0069] The pulling stage is an important part of melt pulling and forming. The main goal of this stage is to ensure the stability and continuity of the pulling process to obtain single crystal silicon that meets the requirements.

[0070] The cooling stage is the step of cooling the silicon single crystal and the crucible it is in after the pulling process is completed. The main goal of this stage is to avoid deformation and cracking of the silicon single crystal caused by rapid cooling, so as to protect the integrity of the crucible and the silicon single crystal.

[0071] It is understandable that in the process of single crystal silicon preparation, determining the current preparation stage refers to a specific link in the single crystal silicon production process. Single crystal silicon preparation is a complex and orderly process, which is divided into preheating stage, melting stage, pulling stage and cooling stage in chronological order. Each stage has its specific tasks and goals, which together constitute the complete process of single crystal silicon preparation.

[0072] Determining the current stage of preparation is crucial to the single crystal silicon preparation process. First, it helps ensure that each stage can proceed according to the predetermined conditions, thereby ensuring the quality of the single crystal silicon.

[0073] S102: Determine a temperature control algorithm and a target temperature corresponding to the current preparation stage.

[0074] Among them, the temperature control algorithm is a strategy or method used to regulate and control the temperature changes during the single crystal silicon preparation process.

[0075] The target temperature is the temperature value that you want to achieve or maintain.

[0076] It can be understood that, first of all, according to the process requirements of single crystal silicon preparation and the characteristics of each stage, a suitable temperature control algorithm is selected. These temperature control algorithms can dynamically adjust the heating or cooling power according to the real-time detected temperature data to achieve precise temperature control. Secondly, according to the specific needs of each stage and the thermal characteristics of the material, the corresponding target temperature is set. The setting of the target temperature should be based on theoretical calculations and optimized to ensure the preparation effect. Finally, during the preparation process, the heating or cooling power is continuously adjusted by real-time detection of temperature data and the output of the control algorithm to maintain or reach the target temperature, thereby ensuring the smooth progress of the single crystal silicon preparation process and the quality of the single crystal silicon.

[0077] Different preparation stages have different temperature requirements. The preheating stage needs to gradually increase the temperature, the melt stage needs to reach a certain melting point temperature, the pulling stage needs to maintain a stable temperature to ensure the quality of the single crystal silicon growth, and the cooling stage needs to control the cooling rate to avoid deformation and cracking of the single crystal silicon. Selecting the appropriate temperature control algorithm and target temperature can ensure that each stage can be carried out according to the predetermined temperature and conditions, thereby improving the quality and preparation efficiency of single crystal silicon. At the same time, precise temperature control can also help reduce energy consumption, extend crucible life and reduce production costs.

[0078] S103: In the current preparation stage, the crucible temperature is controlled using a temperature control algorithm according to the target temperature.

[0079] It is understandable that in the current preparation stage, the temperature in the crucible is adjusted using a temperature control algorithm based on the target temperature value. This process involves dynamically adjusting the power output of the heating element (such as a resistance wire, an induction coil, etc.) to ensure that the temperature in the crucible can be accurately maintained within the target temperature range, thereby meeting the requirements for the completion of the single crystal silicon.

[0080] Different preparation stages require different temperature environments to promote the melting of single crystal silicon raw materials, crystal growth or stabilization. As a key component for carrying the melt and heating, the temperature control of the crucible directly affects the quality and yield of single crystal silicon. By accurately controlling the crucible temperature, the deformation and cracking of the crucible during the preparation process can be minimized, the generation of defects can be reduced, and the purity and integrity of single crystal silicon can be improved. In addition, stable temperature control can also help improve production efficiency, reduce energy consumption and production costs.

[0081] The temperature control method provided in this embodiment determines the current preparation stage in the single crystal silicon preparation process, wherein the single crystal silicon preparation process includes the following preparation stages in chronological order: a preheating stage, a melting stage, a drawing stage and a cooling stage, determines the temperature control algorithm and the target temperature corresponding to the current preparation stage, and controls the crucible temperature according to the target temperature using the temperature control algorithm in the current preparation stage; in the single crystal silicon preparation process, this method controls the crucible temperature by identifying the current preparation stage and applying the corresponding temperature control algorithm and target temperature, thereby extending the service life of the crucible.

[0082] In a possible implementation, when the current preparation stage is a preheating stage, a temperature control algorithm corresponding to the preheating stage is determined, and the crucible temperature is controlled by using the temperature control algorithm according to the target temperature. The specific implementation steps include:

[0083] When the current preparation stage is the preheating stage, determining that the temperature control algorithm corresponding to the preheating stage is a proportional integral differential algorithm;

[0084] Determine the proportional term, integral term and differential term in the proportional-integral-differential algorithm according to the difference between the current temperature and the target temperature;

[0085] The first heating power is determined according to the proportional term, the integral term and the differential term in the proportional-integral-differential algorithm, and the heating is controlled based on the first heating power.

[0086] Among them, the Proportional Integral Derivative (PID) algorithm drives the crucible temperature to move toward the target temperature based on the difference between the current temperature and the target temperature. During the control process, the PID algorithm continuously calculates the difference between the current temperature and the target temperature, and calculates the control amount based on the parameters of the three parts of proportion, integration and differentiation. Then, the crucible temperature is adjusted according to this control amount to gradually approach the target temperature.

[0087] It can be understood that the target temperature of the preheating stage is first determined, and the current temperature data is collected in real time. Then, according to the difference between the current temperature and the target temperature, as well as the principle and parameter setting of the proportional-integral-differential algorithm, the values ​​of the proportional term, the integral term and the differential term are calculated. The values ​​of these three terms jointly determine the first heating power during the heating process. Finally, the output power of the heater is controlled according to the calculated first heating power, thereby achieving precise control of the preheating process. By continuously detecting and adjusting the parameters of the proportional-integral-differential algorithm, it can be ensured that the preheating stage can be carried out at a predetermined temperature and rate, providing a stable temperature environment for subsequent preparation steps.

[0088] Assume that the current temperature at the first second is 1120°C and the target temperature is 1200°C.

[0089] The difference between the current temperature and the target temperature is: ;

[0090] The proportional term is: ;

[0091] The integral term is: ;

[0092] The differential term is: ;

[0093] The control quantity is: ;

[0094] The first heating power is .

[0095] The current temperature at the second second is 1130°C and the target temperature is 1200°C.

[0096] The difference between the current temperature and the target temperature is: ;

[0097] The proportional term is: ;

[0098] The integral term is: ;

[0099] The differential term is: ;

[0100] The control quantity is: ;

[0101] At this time, the first heating power is adjusted to .

[0102] Repeat the above steps every second until the current temperature reaches the target temperature and stop heating.

[0103] In a possible implementation, when the current preparation stage is the melting stage, a temperature control algorithm corresponding to the melting stage is determined, and the crucible temperature is controlled by using the temperature control algorithm according to the target temperature. The specific implementation steps include:

[0104] When the current preparation stage is the melting stage, determining that the temperature control algorithm corresponding to the melting stage is a fuzzy control algorithm;

[0105] Determine the real-time temperature error and temperature error change rate based on the current temperature and the target temperature;

[0106] Determine a first fuzzy subset and a first membership corresponding to the temperature error, and a second fuzzy subset and a second membership corresponding to the temperature error change rate, and determine a third fuzzy subset and a third membership corresponding to the heating power according to the first fuzzy subset, the first membership, the second fuzzy subset, the second membership, and a preset fuzzy rule, wherein the fuzzy rule characterizes the correspondence between the temperature error fuzzy subset, the temperature error change rate fuzzy subset, and the heating power fuzzy subset;

[0107] The third fuzzy subset and the third membership degree are converted into a second heating power, and heating is controlled based on the second heating power.

[0108] Among them, the fuzzy control algorithm is an intelligent control method based on fuzzy logic. It converts precise control variables (such as temperature error and temperature error change rate) into fuzzy subsets and memberships, and then infers according to preset fuzzy rules to obtain the fuzzy subsets and memberships of the control output (such as heating power). Finally, this fuzzy output is converted into a precise control quantity to execute the control action, thereby achieving effective control of the temperature control system.

[0109] It can be understood that, first, the input variables are defined as temperature error, membership of temperature error, temperature error change rate and membership of temperature error change rate, and the output variables are heating power and membership of heating power. Then, these variables are fuzzified into different fuzzy sets, such as negative large, negative medium, negative small, zero, positive small, positive medium, positive large, etc. Next, a series of fuzzy rules are defined based on experience and needs (such as "if the temperature error is positive large and the error change rate is zero, then the heating power is positive large"). In the actual control process, the real-time temperature error and error change rate are calculated according to the current temperature and the target temperature. After fuzzification, they are inferred through the fuzzy rule base to obtain the fuzzy output heating power. Finally, based on the membership, a defuzzification method (such as the centroid method and the maximum membership method) is used to convert the fuzzy output into a clear control signal, that is, the second heating power, so as to realize the heating control of the crucible.

[0110] Assume that the current temperature at the first second is 1200°C and the target temperature is 1420°C.

[0111] The temperature error between the current temperature and the target temperature is: ;

[0112] Temperature error change rate , then the temperature error The fuzzy subset is positive with a membership of 80% and a temperature error change rate of The membership of the fuzzy subset of zero is 100%. According to the fuzzy rule (if the fuzzy subset of the temperature error is positive and the fuzzy subset of the temperature error change rate is zero, then the fuzzy subset of the heating power is positive), and the fuzzy subset of the heating power is defuzzified, at this time, the range of positive heating power is: 80%-100%. Then, the heating power values ​​corresponding to 80% of the range of positive heating power are 84% and 96%. The maximum membership method is used to obtain the second heating power of 90%.

[0113] The current temperature at the second second is 1250°C and the target temperature is 1420°C.

[0114] The temperature error between the current temperature and the target temperature is: ;

[0115] The temperature error change rate is: ;

[0116] The temperature error The fuzzy subset is in the middle with a membership degree of 80%, and the temperature error change rate The probability that the fuzzy subset is positively small is 80%. According to the fuzzy rule (if the fuzzy subset of the temperature error is positively small and the fuzzy subset of the temperature error change rate is positively small, then the fuzzy subset of the heating power is positively small), and the fuzzy subset of the heating power is defuzzified, at this time, the range of the heating power being positively large is: 70%-90%. Then, the heating power values ​​corresponding to the range of the heating power being positively small are 74% and 86%. The maximum membership method is used to obtain the second heating power of 80%.

[0117] Repeat the above steps every second until the current temperature reaches the target temperature and stop heating.

[0118] In a possible implementation, when the current preparation stage is the drawing stage, a temperature control algorithm corresponding to the drawing stage is determined, and the crucible temperature is controlled by using the temperature control algorithm according to the target temperature. The specific implementation steps include:

[0119] When the current preparation stage is the drawing stage, determining that the temperature control algorithm corresponding to the drawing stage is a model predictive control algorithm;

[0120] A model predictive control algorithm is adopted to predict the third heating power at the next moment based on the current temperature, the target temperature and the current heating power, and the heating is controlled based on the third heating power.

[0121] The Model Predictive Control (MPC) algorithm predicts and adjusts the heating power at the next moment by establishing a mathematical model between melt temperature and heating power. The MPC algorithm includes: the relationship calculation formula between melt temperature and heating power and the objective function.

[0122] The relationship between melt temperature and heating power is calculated as follows:

[0123]

[0124] in, For the The temperature at that moment, For the The temperature at that moment, For the The heating power at each moment, is the temperature coefficient, is the heating power coefficient.

[0125] Heating power The method to determine is: objective function To find a heating power , so that The value of is the smallest.

[0126] The objective function expression is:

[0127]

[0128] in, is the target temperature, For the The temperature at that moment, For the The heating power at each moment, is the number of temperature measurement points, To control the number of heating power, is the weight factor.

[0129] It can be understood that, first, the melt temperature at the next moment is predicted based on the relationship between the melt temperature and the heating power, the current temperature and the current heating power. Then, the objective function is optimized based on the melt temperature at the next moment and the target temperature to find the heating power that minimizes the objective function value, which is the third heating power at the next moment. Finally, the melt heating is controlled based on the third heating power.

[0130] Assuming the current melt temperature , target temperature , current heating power =30%, temperature coefficient , the heating power coefficient is =1000, weight factor , using the relationship between melt temperature and heating power, the melt temperature at the next moment is calculated as:

[0131]

[0132] Then, the objective function is optimized as follows:

[0133]

[0134] Find Smallest ,Right now At this time, the third heating power is 32%.

[0135] In a possible implementation, when the current preparation stage is a cooling stage, a temperature control algorithm corresponding to the drawing stage is determined, and the crucible temperature is controlled using the temperature control algorithm according to the target temperature. The specific implementation steps include:

[0136] When the current preparation stage is a cooling stage, determining that the temperature control algorithm corresponding to the cooling stage is a decreasing proportional integral differential algorithm;

[0137] Determine the proportional term, integral term and differential term in the decreasing proportional integral differential algorithm according to the difference between the current temperature and the target temperature;

[0138] The flow rate and / or temperature of the cooling medium is determined according to the proportional term, the integral term and the differential term in the decreasing proportional integral differential algorithm, and the operation of the cooling system is controlled based on the flow rate and / or the temperature of the cooling medium.

[0139] Among them, the decreasing proportional integral differential algorithm and the proportional integral differential algorithm have certain similarities in control principle, but they have some differences in parameter adjustment and algorithm characteristics. The decreasing proportional integral differential algorithm makes decreasing adjustments to the proportional coefficient, integral coefficient and differential coefficient based on the proportional integral differential algorithm.

[0140] It can be understood that, first, the target temperature of the cooling stage is determined, and the current temperature data is collected in real time. Then, according to the difference between the current temperature and the target temperature, as well as the principle and parameter setting of the proportional-integral-differential algorithm, the values ​​of the proportional term, the integral term, and the differential term are calculated. The values ​​of these three terms jointly determine the flow rate and / or temperature of the cooling medium. Finally, the cooling stage is precisely controlled according to the calculated flow rate and / or temperature of the cooling medium. By continuously detecting and adjusting the parameters of the proportional-integral-differential algorithm, it can be ensured that the cooling stage can control the operation of the cooling system according to the flow rate and / or temperature of the cooling medium.

[0141] Assume that the current temperature at the first second is 1440°C and the target temperature is 0°C.

[0142] The difference between the current temperature and the target temperature is: ;

[0143] The proportional term is: ;

[0144] The integral term is: ;

[0145] The differential term is: ;

[0146] The control quantity is: ;

[0147] The first heating power is .

[0148] The current temperature in the second second is 1400°C and the target temperature is 0°C.

[0149] The difference between the current temperature and the target temperature is: ;

[0150] The proportional term is: ;

[0151] The integral term is: ;

[0152] The differential term is: ;

[0153] The control quantity is: ;

[0154] At this time, the first heating power is adjusted to .

[0155] The above steps are repeated every second until the current temperature reaches the target temperature and cooling stops.

[0156] Figure 2 This is a schematic diagram of the structure of the temperature control device provided in this application. Figure 2 As shown, the temperature control device 200 provided in this embodiment includes:

[0157] The determination module 201 is used to determine the current preparation stage in the single crystal silicon preparation process, wherein the single crystal silicon preparation process includes the following preparation stages in chronological order: a preheating stage, a melting stage, a pulling stage, and a cooling stage;

[0158] The determination module 201 is further used to determine a temperature control algorithm and a target temperature corresponding to the current preparation stage;

[0159] The control module 202 is used to control the crucible temperature by using a temperature control algorithm according to a target temperature in the current preparation stage.

[0160] Optionally, the determination module 201 is further configured to determine that the temperature control algorithm corresponding to the preheating stage is a proportional-integral-differential algorithm when the current preparation stage is a preheating stage;

[0161] The determination module 201 is further used to determine that the temperature control algorithm corresponding to the melting stage is a fuzzy control algorithm when the current preparation stage is the melting stage;

[0162] The determination module 201 is further used to determine that the temperature control algorithm corresponding to the drawing stage is a model predictive control algorithm when the current preparation stage is the drawing stage;

[0163] The determination module 201 is further configured to determine, when the current preparation stage is the cooling stage, that the temperature control algorithm corresponding to the cooling stage is a decreasing proportional integral differential algorithm.

[0164] Optionally, the determination module 201 is further configured to determine a proportional term, an integral term and a differential term in a proportional-integral-differential algorithm according to a difference between the current temperature and the target temperature;

[0165] The determination module 201 is further used to determine the first heating power according to the proportional term, the integral term and the differential term in the proportional-integral-differential algorithm;

[0166] The control module 202 is further configured to control heating based on the first heating power.

[0167] Optionally, the determination module 201 is further configured to determine a real-time temperature error and a temperature error change rate according to the current temperature and the target temperature;

[0168] The determination module 202 is further used to determine a first fuzzy subset and a first membership degree corresponding to the temperature error, and a second fuzzy subset and a second membership degree corresponding to the temperature error change rate, and determine a third fuzzy subset and a third membership degree corresponding to the heating power according to the first fuzzy subset, the first membership degree, the second fuzzy subset, the second membership degree and a preset fuzzy rule, wherein the fuzzy rule characterizes the correspondence between the temperature error fuzzy subset, the temperature error change rate fuzzy subset and the heating power fuzzy subset;

[0169] The determination module 201 is further used to convert the third fuzzy subset and the third membership degree into a second heating power;

[0170] The control module 202 is further configured to control heating based on the second heating power.

[0171] Optionally, the determination module 201 is further configured to use a model predictive control algorithm to predict the third heating power at the next moment based on the current temperature, the target temperature and the current heating power;

[0172] The control module 202 is further configured to control heating based on the third heating power.

[0173] Optionally, the determination module 201 is further configured to determine a proportional term, an integral term and a differential term in a decreasing proportional integral differential algorithm according to a difference between the current temperature and the target temperature;

[0174] The determination module 201 is further used to determine the flow rate and / or temperature of the cooling medium according to the proportional term, the integral term and the differential term in the decreasing proportional integral differential algorithm;

[0175] The control module 202 is further configured to control the operation of the cooling system based on the flow rate and / or temperature of the cooling medium.

[0176] Figure 3 This is a schematic diagram of the structure of the temperature control device provided in this application. Figure 3 As shown, the present application provides a temperature control device, and the temperature control device 300 includes: a receiver 301, a transmitter 302, a processor 303 and a memory 304.

[0177] Receiver 301, for receiving instructions and data;

[0178] A transmitter 302, used for sending instructions and data;

[0179] Memory 304, used to store computer-executable instructions;

[0180] The processor 303 is used to execute the computer-executable instructions stored in the memory 304 to implement the various steps performed by the temperature control method in the above embodiment. For details, please refer to the relevant description in the above embodiment of the temperature control method.

[0181] Optionally, the memory 304 may be independent or integrated with the processor 303 .

[0182] When the memory 304 is independently provided, the electronic device further includes a bus for connecting the memory 304 and the processor 303 .

[0183] The present application also provides a computer-readable storage medium, in which computer-executable instructions are stored. When a processor executes the computer-executable instructions, the temperature control method performed by the above-mentioned temperature control device is implemented.

[0184] The present application also provides a computer program product, including a computer program, which implements the above method when executed by a processor.

[0185] The present application also provides a computer-readable storage medium, in which computer-executable instructions are stored. When a processor executes the computer-executable instructions, the above method is implemented.

[0186] The above-mentioned readable storage medium can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic memory, flash memory, magnetic disk or optical disk. The readable storage medium can be any available medium that can be accessed by a general or special-purpose computer.

[0187] An exemplary readable storage medium is coupled to a processor so that the processor can read information from the readable storage medium and write information to the readable storage medium. Of course, the readable storage medium can also be a component of the processor. The processor and the readable storage medium can be located in an application specific integrated circuit (Application Specific Integrated Circuits, referred to as: ASIC). Of course, the processor and the readable storage medium can also exist in the device as discrete components.

[0188] The division of units is only a logical function division, and there may be other divisions in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interface, device or unit, which can be electrical, mechanical or other forms.

[0189] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0190] In addition, each functional unit in each embodiment of the present invention may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit.

[0191] If the function is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art, or the part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium, including several instructions for a computer device (which can be a personal computer, server, or network device, etc.) to perform all or part of the steps of the methods of each embodiment of the present invention. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), disk or optical disk, etc. Various media that can store program codes.

[0192] Those skilled in the art can understand that all or part of the steps of implementing the above-mentioned method embodiments can be completed by hardware related to program instructions. The aforementioned program can be stored in a computer-readable storage medium. When the program is executed, the steps of the above-mentioned method embodiments are executed; and the aforementioned storage medium includes: ROM, RAM, disk or optical disk and other media that can store program codes.

[0193] Finally, it should be noted that those skilled in the art will readily conceive of other embodiments of the present invention after considering the specification and practicing the invention disclosed herein. The present invention is intended to cover any variations, uses or adaptations of the present invention, which follow the general principles of the present invention and include common knowledge or customary technical means in the art not disclosed by the present invention, are not limited to the precise structure described above and shown in the drawings, and may be modified and changed in various ways without departing from the scope thereof. The scope of the present invention is limited only by the appended claims.

Claims

1. A temperature control method, characterized in that: include: In the process of preparing single crystal silicon, determining the current preparation stage, wherein the single crystal silicon preparation process includes the following preparation stages in chronological order: preheating stage, melting stage, pulling stage and cooling stage; Determine the temperature control algorithm and target temperature corresponding to the current preparation stage; In the current preparation stage, the crucible temperature is controlled using the temperature control algorithm according to the target temperature.

2. The method according to claim 1, characterized in that The step of determining a temperature control algorithm corresponding to the current preparation stage includes any one or more of the following: When the current preparation stage is the preheating stage, determining that the temperature control algorithm corresponding to the preheating stage is a proportional-integral-differential algorithm; When the current preparation stage is the melting stage, determining that the temperature control algorithm corresponding to the melting stage is a fuzzy control algorithm; In the case where the current preparation stage is the drawing stage, determining that the temperature control algorithm corresponding to the drawing stage is a model predictive control algorithm; When the current preparation stage is the cooling stage, it is determined that the temperature control algorithm corresponding to the cooling stage is a decreasing proportional integral differential algorithm.

3. The method according to claim 2, characterized in that When the current preparation stage is the preheating stage, controlling the crucible temperature by using the temperature control algorithm according to the target temperature includes: Determining a proportional term, an integral term and a differential term in the proportional-integral-differential algorithm according to a difference between the current temperature and the target temperature; A first heating power is determined according to a proportional term, an integral term and a differential term in the proportional-integral-differential algorithm, and heating is controlled based on the first heating power.

4. The method according to claim 2, characterized in that: When the current preparation stage is the melting stage, controlling the crucible temperature by using the temperature control algorithm according to the target temperature includes: Determine a real-time temperature error and a temperature error change rate according to the current temperature and the target temperature; Determine a first fuzzy subset and a first membership corresponding to the temperature error, and a second fuzzy subset and a second membership corresponding to the temperature error change rate, and determine a third fuzzy subset and a third membership corresponding to the heating power according to the first fuzzy subset, the first membership, the second fuzzy subset, the second membership, and a preset fuzzy rule, wherein the fuzzy rule characterizes the correspondence between the temperature error fuzzy subset, the temperature error change rate fuzzy subset, and the heating power fuzzy subset; The third fuzzy subset and the third membership degree are converted into a second heating power, and heating is controlled based on the second heating power.

5. The method according to claim 2, characterized in that: When the current preparation stage is the drawing stage, controlling the crucible temperature by using the temperature control algorithm according to the target temperature includes: A model predictive control algorithm is adopted to predict the third heating power at the next moment based on the current temperature, the target temperature and the current heating power, and the heating is controlled based on the third heating power.

6. The method according to claim 2, characterized in that When the current preparation stage is the cooling stage, controlling the crucible temperature by using the temperature control algorithm according to the target temperature includes: Determining the proportional term, the integral term and the differential term in the decreasing proportional integral differential algorithm according to the difference between the current temperature and the target temperature; The flow rate and / or temperature of the cooling medium is determined according to the proportional term, the integral term and the differential term in the decreasing proportional integral differential algorithm, and the operation of the cooling system is controlled based on the flow rate and / or the temperature of the cooling medium.

7. A temperature control device, characterized in that: include: A determination module is used to determine the current preparation stage in the single crystal silicon preparation process, wherein the single crystal silicon preparation process includes the following preparation stages in chronological order: a preheating stage, a melting stage, a pulling stage, and a cooling stage; The determination module is further used to determine a temperature control algorithm and a target temperature corresponding to the current preparation stage; The control module is used to control the crucible temperature according to the target temperature using the temperature control algorithm in the current preparation stage.

8. The device according to claim 7, characterized in that include: The determination module is further configured to determine, when the current preparation stage is the preheating stage, that the temperature control algorithm corresponding to the preheating stage is a proportional-integral-differential algorithm; The determination module is further configured to determine, when the current preparation stage is the melt stage, that the temperature control algorithm corresponding to the melt stage is a fuzzy control algorithm; The determination module is further configured to determine, when the current preparation stage is the drawing stage, that the temperature control algorithm corresponding to the drawing stage is a model predictive control algorithm; The determination module is further configured to determine, when the current preparation stage is the cooling stage, that the temperature control algorithm corresponding to the cooling stage is a decreasing proportional integral differential algorithm.

9. A temperature control device, characterized in that: include: A processor, and a memory communicatively connected to the processor; The memory stores computer-executable instructions; The processor executes the computer-executable instructions stored in the memory to implement the method according to any one of claims 1 to 6.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores computer-executable instructions, which are used to implement the method according to any one of claims 1 to 6 when executed by a processor.

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