Photoetching exposure equipment and method thereof

Abstract

The invention relates to the technical field of semiconductor manufacturing, and discloses a photoetching exposure method and equipment, and the method comprises the following steps: S1, pre-preparation: initializing parameters of a mask, a light source emitter and a PLC module; s2, path planning: optimizing the path layout according to the exposure pattern; s3, platform positioning, wherein nanoscale positioning and posture adjustment are achieved through a magnetic ring and an electromagnetic coil; s4, double-platform collaborative exposure: performing exposure on one platform and alignment on the other platform to realize parallel seamless switching; s5, dynamic correction: performing thermal expansion compensation and position correction through a temperature control module and a PLC module; and S6, fault monitoring: monitoring the equipment state by using a monitoring module, and interactively predicting the fault. The magnetic suspension circular truncated cone realizes friction-free suspension and multi-degree-of-freedom attitude adjustment of the wafer platform, thermal expansion errors are corrected in real time in combination with the temperature control module and the servo dynamic compensation system, optical distortion is corrected in cooperation with the free-form surface lens, mechanical errors and thermal expansion influences are reduced, and the precision requirement of an advanced manufacturing process is met.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a photolithography exposure device and a method thereof. Background Art

[0002] The photolithography exposure method is a key process step in semiconductor manufacturing. Its core task is to accurately transfer the fine pattern on the mask to the photoresist layer on the wafer surface through an optical projection system. Existing photolithography equipment mainly uses a mechanical contact platform combined with a deep ultraviolet (DUV) or extreme ultraviolet (EUV) light source to project the pattern through a multi-layer lens array, while using multiple exposure technology to achieve pattern manufacturing with smaller line widths. These devices have been widely used in chip micro-processing, especially in the 14nm and 10nm process nodes. Demonstrating good application value. However, with the continuous advancement of chip technology and the improvement of process requirements, photolithography equipment still faces many technical challenges in terms of high precision, high efficiency and operational reliability.

[0003] Current lithography equipment mostly uses a mechanical contact wafer platform. Although the accuracy has reached the nanometer level, the thermal expansion effect caused by mechanical friction, vibration and long-term operation still interferes with the positioning accuracy. In the process of multi-layer pattern superposition, the error caused by thermal expansion is difficult to completely eliminate, resulting in a decrease in the alignment accuracy of the overall projection pattern, which restricts the high requirements of more advanced processes. Prior art, CN202411660592.X compensation model creation method, lithography exposure simulation method, device and equipment, traditional single-platform design lithography equipment has complex switching operations between exposure and wafer alignment, resulting in long waiting times and limiting overall production capacity. In addition, the platform path planning algorithm mostly uses fixed rules and lacks flexibility. The unnecessary movement between exposure points on the wafer surface increases time and energy consumption, thereby reducing production efficiency. In addition, high-power light sources will cause local heat accumulation during long-term operation, and temperature changes in the wafer platform and optical system will cause drift in size and position. Although certain cooling mechanisms have been introduced in the prior art, the cooling efficiency is low and it has not been combined with real-time thermal expansion compensation, which cannot completely avoid the impact of thermal expansion on pattern projection accuracy. At the same time, the monitoring system of existing lithography equipment mainly relies on preset parameters and manual intervention, and cannot dynamically collect and analyze the equipment status during operation, especially in terms of real-time processing of vibration, displacement, temperature and other data. This defect makes the equipment prone to shutdown due to failure, affecting the stability and continuity of production.

[0004] Therefore, it is necessary to design a photolithography exposure method to solve the above problems. Summary of the invention

[0005] The purpose of the present invention is to provide a photolithography exposure method to overcome the above-mentioned shortcomings of the current prior art.

[0006] In order to achieve the above object, the present invention adopts the following technical solutions:

[0007] A photolithography exposure method, comprising

[0008] The processing platform, which serves as the shell of the whole equipment and is used to carry and protect the structure;

[0009] A magnetic suspension truncated table, which is arranged on the surface of the processing platform and is used to achieve nanometer-level positioning through frictionless suspension;

[0010] An optical mechanism, which is arranged on the top of the processing platform and is used to project the corresponding pattern onto the wafer surface;

[0011] A control mechanism, which is fixed on the top of the processing platform and is used for automatic control and detection of the platform;

[0012] The magnetic suspension truncated table comprises a base, the base is mounted on the surface of the processing platform through an electric guide rail, an electromagnetic coil is mounted on the top of the base, a magnetic ring is arranged on the top of the electromagnetic coil, and an outer frame is fixedly connected to the top of the magnetic ring;

[0013] A motor is arranged inside the outer frame, a gear is fixedly connected to the output end of the motor, a fixing frame 1 distributed in a ring array is fixed inside the outer frame, racks are slidably arranged inside the fixing frame 1, the racks (8) are meshed with the gears, the racks are arranged in an up-and-down staggered manner, and a connecting frame is fixed to one end of each rack;

[0014] The specific photolithography exposure method comprises the following steps:

[0015] S1. Pre-preparation: Initialize the mask, light source transmitter and PLC module parameters;

[0016] S2, path planning: optimize the exposure path according to the exposure pattern layout;

[0017] S3, platform positioning: the magnetic suspension round table is set between the magnetic ring and the electromagnetic coil to achieve nano-level positioning and posture adjustment;

[0018] S4, dual-platform collaborative exposure: adopt parallel operation of one platform for exposure and one platform for alignment to achieve seamless switching;

[0019] S5, dynamic correction: during the exposure process, real-time compensation for thermal expansion and dynamic position correction are performed through the temperature control module and the PLC module;

[0020] S6. Fault monitoring: After the exposure is completed, the monitoring module controls the sensor group distributed on the processing platform to monitor the equipment status in real time, and interacts with the PLC module to predict potential faults.

[0021] Preferably, in step S3, the outer frame is suspended by the magnetic field force generated by the interaction between the magnetic ring and the electromagnetic coil, and the magnetic suspension force satisfies the following formula:

[0022] F=I·B·L

[0023] Among them, F is the magnetic field force, I is the coil current, B is the magnetic field strength, and L is the coil length.

[0024] Preferably, the step S4 further comprises the following steps:

[0025] a. One platform performs photolithography exposure operations;

[0026] b. Another platform synchronously completes wafer alignment and preparation;

[0027] c. The two platforms use collaborative switching logic, and the total operation time satisfies the following relationship:

[0028] T total =T A +T B -T overlap

[0029] Among them, T A is the operation time of the exposure platform, T B is the preparation time for the alignment platform, T overlap Parallel operation time.

[0030] Preferably, in step S5, the real-time compensation for thermal expansion includes the following steps:

[0031] a. Collect temperature data of wafer platform and optical system in real time;

[0032] c. Calculate the length change caused by thermal expansion based on the formula ΔL = α·L·ΔT;

[0033] c. The wafer platform position is dynamically adjusted by a servo motor, and a free-form surface lens is used to compensate for optical distortion.

[0034] Preferably, in the step S5, when the temperature control module (42) detects that the temperature is too high, it will control the liquid cooling circulation device in the processing platform (1) through the PLC module (41) to dissipate the heat, wherein the dissipated heat satisfies the following formula:

[0035]

[0036] in, is the coolant flow rate, c is the coolant specific heat capacity, and ΔT is the coolant temperature difference.

[0037] Preferably, the step S6 further comprises the following steps:

[0038] a. Use sensors to collect equipment vibration, displacement and temperature data;

[0039] c. Use AI models to analyze operating data and predict potential failures;

[0040] c. Make real-time adjustments to the control parameters of the lithography equipment to optimize exposure accuracy and efficiency.

[0041] Preferably, the AI ​​fault prediction uses a long short-term memory network to identify abnormal patterns through the following prediction model:

[0042] y t =f(W x ·x t +W h ·h t-1 +b)

[0043] Among them, y t is the prediction result of the current time step, x t is the current input data, h t-1 is the hidden state of the previous time step, W x ,W h , b are the network weights and biases.

[0044] Preferably, a PLC module is provided inside the control mechanism, a temperature control module is provided inside the control mechanism, a monitoring module is provided inside the control mechanism, and the PLC module and the temperature control module are electrically connected.

[0045] Preferably, the optical mechanism includes a light source emitter, which is arranged on the top of the control mechanism, and the light source emitter is fixed to a second fixing frame through the control mechanism, a pull frame is arranged inside the second fixing frame, an optical lens is arranged inside the pull frame, and a pull handle is fixed to one side of the pull frame.

[0046] The beneficial effects of the present invention are as follows: the technical solution arranges an adjustment component in the extrusion module, and arranges an adjustable structure to adjust the position of the profiling module, which can be precisely adjusted to open and tighten the product PP skeleton, thereby effectively solving the problem of difficult adjustment of the PP skeleton opening and large adjustment scrap. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Figure 1 A flow chart of the method steps of a photolithography exposure method of the present invention;

[0048] Figure 2 A three-dimensional diagram of a photolithography exposure device according to the present invention;

[0049] Figure 3This is a disassembled diagram of a magnetic suspension truncated table of a photolithography exposure device of the present invention;

[0050] Figure 4 A schematic diagram of the internal structure of an outer frame of a photolithography exposure device according to the present invention;

[0051] Figure 5 A schematic diagram of a pulling frame structure of a photolithography exposure device of the present invention;

[0052] Figure 6 A schematic diagram of a control mechanism of a photolithography exposure device according to the present invention;

[0053] In the figure: 1. Processing platform; 2. Magnetic suspension truncated table; 3. Optical mechanism; 4. Control mechanism; 5. Motor; 6. Gear; 7. Fixed frame 1; 8. Rack; 9. Connecting frame; 21. Outer frame; 22. Magnetic ring; 23. Base; 24. Electromagnetic coil; 31. Light source transmitter; 32. Fixed frame 2; 33. Pull frame; 34. Optical lens; 35. Pull handle; 41. PLC module; 42. Temperature control module; 43. Monitoring module. DETAILED DESCRIPTION

[0054] Reference Figures 2 to 6 , a photolithography exposure device, comprising

[0055] The processing platform 1, which serves as the shell of the whole equipment and is used to carry and protect the structure;

[0056] A magnetic suspension truncated table 2, which is arranged on the surface of the processing platform 1 and is used to achieve nano-level positioning through frictionless suspension;

[0057] An optical mechanism 3, which is arranged on the top of the processing platform 1 and is used to project the corresponding pattern onto the wafer surface;

[0058] A control mechanism 4, which is fixed on the top of the processing platform 1 and is used for automatic control and detection of the platform;

[0059] The magnetic suspension truncated table 2 includes a base 23, which is mounted on the surface of the processing platform 1 through an electric guide rail, an electromagnetic coil 24 is mounted on the top of the base 23, a magnetic ring 22 is arranged on the top of the electromagnetic coil 24, and an outer frame 21 is fixedly connected to the top of the magnetic ring 22;

[0060] The outer frame 21 is provided with a motor 5, the output end of the motor 5 is fixedly connected with a gear 6, the outer frame 21 is provided with a fixed frame 7 distributed in a ring array, the fixed frame 7 is slidably provided with a rack 8, the racks 8 are meshed with the gears 6, the racks 8 are staggered up and down, and one end of the racks 8 is fixed with a connecting frame 9;

[0061] The optical mechanism 3 includes a light source emitter 31, which is arranged on the top of the control mechanism 4. The light source emitter 31 is fixed to a second fixing frame 32 through the control mechanism 4. A pull frame 33 is arranged inside the second fixing frame 32. An optical lens 34 is arranged inside the pull frame 33. A pull handle 35 is fixed to one side of the pull frame 33.

[0062] A PLC module 41 is provided inside the control mechanism 4 , a temperature control module 42 is provided inside the control mechanism 4 , a monitoring module 43 is provided inside the control mechanism 4 , and the PLC module 41 and the temperature control module 42 are electrically connected.

[0063] Specifically, the processing platform 1 is the shell of the entire device, which is used to support and protect the internal structure. The surface is equipped with an electric guide rail for driving the magnetic suspension round table 2 to move flexibly between different working positions. The magnetic suspension round table 2 is composed of a base 23, an electromagnetic coil 24, a magnetic ring 22 and an outer frame 21, wherein the base 23 is connected to the processing platform 1 through a guide rail. The electromagnetic coil 24 cooperates with the magnetic ring 22 to generate a magnetic field force to ensure that the outer frame 21 achieves frictionless suspension and dynamically adjusts the angle. A motor 5 is installed inside the outer frame 21, and the motor 5 drives the rack 8 to slide along the fixed frame 1 7 through the gear 6 to adjust the movement of the connecting frame 9 to adapt to the size and position of different wafers. The optical mechanism 3 is located at the top of the processing platform 1, and includes a light source emitter 31, a fixed frame 2 32 and a pull frame 33. The light source emitter 31 is installed on the processing platform 1 through the fixed frame 2 32, and the emitted light is focused by the optical lens 34 and passes through the mask in the pull frame 33, and finally projected onto the surface of the wafer to complete the exposure. The control mechanism 4 includes a PLC module 41, a temperature control module 42 and a monitoring module 43, which coordinately controls the liquid cooling device, the optical mechanism 3 and the magnetic suspension round table 2 in the processing platform 1 through electrical connection, so as to realize the intelligent operation and fault monitoring of the equipment. This structural design ensures the high precision, high efficiency and operation stability of the lithography exposure equipment.

[0064] Working principle: When photolithography is required, the electric guide rail on the surface of the processing platform 1 is used to drive the magnetic suspension table 2 to move as a whole, so that the two magnetic suspension tables 2 can work alternately, and the outer frame 21 to be photolithographically operated is determined. At this time, the wafer is placed on the surface of the outer frame 21. At this time, the motor 5 can drive the gear 6 to rotate. At this time, the gear 6 controls the rack 8 in three directions to slide along the fixed frame 7, so that the fixed frame 7 drives the connecting frame 9 to move synchronously, so as to adjust to the appropriate position according to the size of the wafer, and at the same time, by adjusting the magnetism of the electromagnetic coil 24, the overall tilt angle of the outer frame 21 is controlled by the magnetic ring 22, so as to adapt to the appropriate After the photolithography angle is determined, the light source is emitted through the light source emitter 31. The emitted light source will change the light through the optical lens 34, and then pass through the mask installed in the last pull frame 33, and finally act on the wafer on the outer frame 21 to perform photolithography. The temperature of the photolithography operation position is monitored by the temperature control module 42 to determine whether to control the liquid cooling device in the processing platform 1 through the PLC module 41 to cool down. At the same time, the vibration, displacement and temperature data of the equipment are monitored in cooperation with the monitoring module 43, and transmitted to the position of the PLC module 41, so that the PLC module 41 can use the AI ​​model to determine whether there is a fault in the equipment.

[0065] The present invention is implemented as follows: Figure 1 As shown, a photolithography exposure method comprises the following steps:

[0066] S1, pre-preparation: initializing the parameters of the mask, the light source emitter 31 and the PLC module 41;

[0067] S2, path planning: optimize the exposure path according to the exposure pattern layout;

[0068] S3, platform positioning: the magnetic suspension truncated table 2 is arranged between the magnetic ring 22 and the electromagnetic coil 24 to achieve nanometer-level positioning and posture adjustment;

[0069] S4, dual-platform collaborative exposure: adopt parallel operation of one platform for exposure and one platform for alignment to achieve seamless switching;

[0070] S5, dynamic correction: during the exposure process, real-time compensation for thermal expansion and dynamic position correction are performed through the temperature control module 42 and the PLC module 41;

[0071] S6, fault monitoring: after the exposure is completed, the sensor group distributed on the processing platform 1 is controlled by the monitoring module 43 to monitor the equipment status in real time, and interact with the PLC module 41 to predict potential faults;

[0072] In step S3, the outer frame 21 is suspended by the magnetic field force generated by the interaction between the magnetic ring 22 and the electromagnetic coil 24, and the magnetic suspension force satisfies the following formula:

[0073] F=I·B·L

[0074] Among them, F is the magnetic field force, I is the coil current, B is the magnetic field strength, and L is the coil length;

[0075] 4 steps, further comprising the following steps:

[0076] a. One platform performs photolithography exposure operations;

[0077] b. Another platform synchronously completes wafer alignment and preparation;

[0078] c. The two platforms use collaborative switching logic, and the total operation time satisfies the following relationship:

[0079] T total =T A +T B -T overlap

[0080] Among them, T A is the operation time of the exposure platform, T B is the preparation time for the alignment platform, T overlap is the parallel operation time;

[0081] In step S5, the real-time compensation of thermal expansion includes the following steps:

[0082] a. Collect temperature data of wafer platform and optical system in real time;

[0083] b. Based on the formula ΔL=α·L·ΔT, the length change caused by thermal expansion is calculated;

[0084] c. Dynamically adjust the wafer platform position through servo motors and use free-form surface lenses to compensate for optical distortion;

[0085] In step S5, when the temperature control module 42 detects that the temperature is too high, it will control the liquid cooling circulation device in the processing platform 1 through the PLC module 41 to dissipate the heat, wherein the dissipated heat satisfies the following formula:

[0086]

[0087] in, is the coolant flow rate, c is the coolant specific heat capacity, ΔT is the coolant temperature difference;

[0088] In step S6, the following steps are further included:

[0089] a. Use sensors to collect equipment vibration, displacement and temperature data;

[0090] b. Use AI models to analyze operating data and predict potential failures;

[0091] c. Adjust the control parameters of the lithography equipment in real time to optimize exposure accuracy and efficiency;

[0092] AI fault prediction uses long short-term memory networks to identify abnormal patterns through the following predictive models:

[0093] y t =f(W x ·x t +W h ·h t-1 +b)

[0094] Among them, y t is the prediction result of the current time step, x t is the current input data, h t-1 is the hidden state of the previous time step, W x ,W h ,b is the network weight and bias;

[0095] Specifically, in step S1, the equipment is pre-prepared before photolithography exposure. The mask is installed in the pull frame 33 of the optical mechanism 3, and the mask position is adjusted by the pull handle 35 to ensure that the mask is aligned with the optical system. The light source transmitter 31 initializes the wavelength, intensity and light uniformity parameters of the light source through the PLC module 41 in the control mechanism 4. At the same time, the electromagnetic coil 24 and the magnetic ring 22 of the magnetic levitation truncated table 2 are pre-applied with current to ensure that the platform is suspended stably. The temperature control module 42 and the monitoring module 43 also enter the working state at the same time, preparing to monitor the temperature and equipment operation in real time. Through pre-preparation work, it is ensured that the entire equipment enters the photolithography operation in the best state, which improves the stability and accuracy of subsequent operations;

[0096] In step S2, the path optimization algorithm built into the PLC module 41 is used to calculate the optimal moving path of the exposure points on the wafer surface according to the layout of the mask pattern. During the path planning process, the distribution characteristics of the exposure points and the motion characteristics of the platform are comprehensively considered, and a dynamic optimization method is used to minimize the platform movement time and path length. By accurately calculating the movement sequence between exposure points, it is ensured that each step of the platform is completed efficiently and accurately, reducing unnecessary energy consumption and time loss, and significantly improving the overall operation efficiency of the equipment;

[0097] In step S3, the magnetic suspension truncated table 2 is moved to the designated working position through the electric guide rail, and the outer frame 21 cooperates with the electromagnetic coil 24 and the magnetic ring 22 to generate a stable magnetic field force, so that the platform can achieve frictionless suspension. At the same time, the overall tilt angle of the outer frame 21 is controlled by adjusting the current intensity of the electromagnetic coil 24. The motor 5 controls the sliding of the rack 8 by driving the gear 6, thereby adjusting the connecting frame 9 so that the outer frame 21 can adapt to wafers of different sizes. Platform positioning ensures that the wafer is accurately aligned with the projection pattern of the optical system, effectively improving the resolution and accuracy of lithography;

[0098] In step S4, through the dual-platform design on the processing platform 1, the two magnetic suspension round tables 2 work alternately to improve work efficiency. When platform A is performing lithography exposure, platform B synchronously completes the wafer alignment and preparation operations. The two platforms are switched through the slide rail, and the switching logic follows. The design of the dual-platform collaborative logic not only reduces the waiting time of a single platform, but also greatly improves the overall production capacity of the equipment.

[0099] In step S5, during the photolithography process, the temperature control module 42 monitors the temperature of the wafer platform and the optical system in real time, and cools the hot spot area through a liquid cooling device. At the same time, the wafer size error caused by temperature change is calculated through the thermal expansion formula, the servo motor is used to dynamically compensate the position of the wafer platform, and the free-form surface lens is used to correct the distortion of the optical path, thereby ensuring the accuracy of the exposure pattern.

[0100] In step S6, the vibration, displacement and temperature data of the equipment are collected through the monitoring module 43, and the data are transmitted to the PLC module 41 in real time, and the operating status of the equipment is analyzed through the AI ​​model. The fault monitoring system can identify potential hidden dangers of the equipment in advance, make real-time adjustments and issue alarms, thereby effectively avoiding unexpected equipment shutdowns and improving the stability and reliability of equipment operation.

[0101] The benefits of the present invention include the technical solution.

[0102] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical scheme and inventive concept of the present invention within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A photolithography exposure device, characterized in that: It includes A processing platform (1), which serves as the outer shell of the entire device and is used to carry and protect the structure; A magnetic suspension truncated table (2), which is arranged on the surface of the processing platform (1) and is used to achieve nanometer-level positioning through frictionless suspension; An optical mechanism (3) is arranged on the top of the processing platform (1) and is used to project the corresponding pattern onto the wafer surface; A control mechanism (4), which is fixed on the top of the processing platform (1) and is used for automatic control and detection of the platform; The magnetic suspension truncated table (2) comprises a base (23), the base (23) is mounted on the surface of the processing platform (1) via an electric guide rail, an electromagnetic coil (24) is mounted on the top of the base (23), a magnetic ring (22) is arranged on the top of the electromagnetic coil (24), and the top of the magnetic ring (22) is fixedly connected to an outer frame (21); A motor (5) is arranged inside the outer frame (21), a gear (6) is fixedly connected to the output end of the motor (5), a fixing frame (7) distributed in a ring array is fixed inside the outer frame (21), racks (8) are slidably arranged inside the fixing frame (7), the racks (8) are meshed with the gears (6), the racks (8) are arranged in an up-and-down staggered manner, and a connecting frame (9) is fixed to one end of each rack (8); The specific photolithography exposure method comprises the following steps: S1, pre-preparation: initializing the parameters of the mask, the light source emitter (31) and the PLC module (41); S2, path planning: optimize the exposure path according to the exposure pattern layout; S3, platform positioning: nanometer-level positioning and posture adjustment are achieved for the magnetic suspension truncated table (2) through the arrangement between the magnetic ring (22) and the electromagnetic coil (24); S4, dual-platform collaborative exposure: adopt parallel operation of one platform for exposure and one platform for alignment to achieve seamless switching; S5, dynamic correction: during the exposure process, thermal expansion real-time compensation and dynamic position correction are performed through the temperature control module (42) and the PLC module (41); S6, fault monitoring: After the exposure is completed, the monitoring module (43) controls the sensor group distributed on the processing platform (1) to monitor the equipment status in real time, and interacts with the PLC module (41) to predict potential faults.

2. A photolithography exposure method according to claim 1, characterized in that: In the step S3, the outer frame (21) is suspended by the magnetic field force generated by the interaction between the magnetic ring (22) and the electromagnetic coil (24), and the magnetic suspension force satisfies the following formula: F=I·B·L Among them, F is the magnetic field force, I is the coil current, B is the magnetic field strength, and L is the coil length.

3. A photolithography exposure method according to claim 1, characterized in that: The step S4 further comprises the following steps: a. One platform performs photolithography exposure operations; b. Another platform simultaneously completes wafer alignment and preparation; c. The two platforms use collaborative switching logic, and the total operation time satisfies the following relationship: T total =T A +T B -T overlap Among them, T A is the operation time of the exposure platform, T B To prepare the platform, T overlap Parallel operation time.

4. A photolithography exposure method according to claim 1, characterized in that: In step S5, the real-time compensation for thermal expansion includes the following steps: a. Collect temperature data of wafer platform and optical system in real time; b. Based on the formula ΔL=α·L·ΔT, the length change caused by thermal expansion is calculated; c. The wafer platform position is dynamically adjusted by a servo motor, and a free-form surface lens is used to compensate for optical distortion.

5. A photolithography exposure method according to claim 1, characterized in that: In the step S5, when the temperature control module (42) detects that the temperature is too high, it will control the liquid cooling circulation device in the processing platform (1) through the PLC module (41) to dissipate the heat, wherein the dissipated heat satisfies the following formula: in, is the coolant flow rate, c is the coolant specific heat capacity, and ΔT is the coolant temperature difference.

6. A photolithography exposure method according to claim 1, characterized in that: The step S6 further comprises the following steps: a. Use sensors to collect equipment vibration, displacement and temperature data; b. Use AI models to analyze operating data and predict potential failures; c. Make real-time adjustments to the control parameters of the lithography equipment to optimize exposure accuracy and efficiency.

7. A photolithography exposure method according to claim 1, characterized in that: The AI ​​fault prediction uses a long short-term memory network to identify abnormal patterns through the following prediction models: y t =f(W x ·x t +W h ·h t-1 +b) Among them, y t is the prediction result of the current time step, x t is the current input data, h t-1 is the hidden state of the previous time step, W x ,W h , b are the network weights and biases.

8. A photolithography exposure device according to claim 1, characterized in that: The control mechanism (4) is provided with a PLC module (41) inside, the control mechanism (4) is provided with a temperature control module (42) inside, the control mechanism (4) is provided with a monitoring module (43) inside, the PLC module (41) and the temperature control module (42) are electrically connected, and the PLC module (41) and the temperature control module (42) are electrically connected.

9. A photolithography exposure device according to claim 1, characterized in that: The optical mechanism (3) comprises a light source emitter (31), the light source emitter (31) being arranged on the top of the control mechanism (4), the light source emitter (31) being fixed to a second fixing frame (32) through the control mechanism (4), a pull frame (33) being arranged inside the second fixing frame (32), an optical lens (34) being arranged inside the pull frame (33), and a pull handle (35) being fixed on one side of the pull frame (33).

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