Semiconductor laser

By adjusting the position height of the reflected deflection assembly, correcting the spot shape of the collimated pump light, solving the problem of "dead zone" in the optical fiber coupling process of semiconductor lasers, improving coupling efficiency and reducing energy loss.

CN119695629AActive Publication Date: 2025-03-25MAXPHOTONICS CORP
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Patent Information

Application Number
CN202411820279.8
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-11
Publication Date
2025-03-25
Estimated Expiration
2044-12-11

AI Technical Summary

Technical Problem

There is a "dead zone" in the fiber coupling process of semiconductor lasers, resulting in a reduced fiber coupling efficiency and a large energy loss. Especially in lasers at ultra-high power levels, the lost energy is converted into heat, increasing production cost and heat dissipation pressure.

Method used

By adjusting the position height of the reflective deflection assembly in the semiconductor laser, the spot shape of the collimated pump light that is focused on is corrected, reducing the duty cycle during the fiber coupling process, thereby reducing the "dead zone".

Benefits of technology

It realizes the reduction of the "dead zone" of semiconductor lasers in the fiber coupling process, improves the coupling efficiency of lasers, reduces energy loss and heat dissipation pressure, and improves the performance of semiconductor lasers.

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Abstract

The invention discloses a semiconductor laser, which comprises a light emitting assembly, a beam combining and focusing assembly, a coupling optical fiber and a plurality of reflection deflection assemblies, and is characterized in that the light emitting assembly comprises a light emitting unit used for emitting pump light perpendicular to the horizontal plane; the reflection deflection assemblies and the light emitting units are arranged in a one-to-one correspondence mode, so that the collimation pump light is transmitted in the first direction, the pump light with the maximum optical path is deflected to the center, and the pump light with the minimum optical path and the pump light with the intermediate optical path are deflected to the edge; the beam combining and focusing assembly is arranged at the output end of the collimated pump light reflected and deflected by the reflecting and deflecting assembly and used for beam combining and focusing of the collimated pump light; and the coupling optical fiber is used for coupling the collimated pump light beam which is combined and focused. The light spot shape of the collimated pump light formed by combining and focusing the multiple beams of collimated pump light is corrected by adjusting the height of the reflection deflection assembly, the duty ratio of the semiconductor laser in the optical fiber coupling process is reduced, and dead zones are reduced.
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Description

Technical Field

[0001] The embodiments of the present invention relate to the field of laser technology, and in particular to a semiconductor laser. Background Art

[0002] Fiber-optic semiconductor lasers have high-stability beam output, good beam quality, high electro-optical efficiency, and other advantages. They play an important role in industrial cutting, medicine, cosmetology, military industry, laser radar and other fields.

[0003] The optical fiber used in semiconductor lasers is generally a perfect circle, while the laser spot of most semiconductor lasers before entering the optical fiber is a trapezoidal shape. This leads to a "dead zone" (also known as "duty cycle") in the process of optical fiber coupling of semiconductor lasers, that is, the size of the spot of the focused coupling entering the optical fiber does not completely match the shape of the optical fiber (such as Figure 1 ). This problem leads to a decrease in the fiber coupling efficiency of semiconductor lasers, an increase in cladding light, and a large energy loss. For ultra-high power (thousands or tens of thousands of watts) lasers, the lost energy is converted into heat, which also increases the production cost and creates heat dissipation pressure for semiconductor lasers. Therefore, it is necessary to reduce the "dead zone" (reduce the "duty cycle") and improve the coupling efficiency of the laser. Summary of the invention

[0004] The present invention provides a semiconductor laser, which corrects the spot shape of collimated pump light focused by beam combining by adjusting the position height of a reflection and deflection component in the semiconductor laser, reduces the duty cycle of the semiconductor laser in the optical fiber coupling process, and achieves the purpose of reducing the "dead zone".

[0005] The present application provides a semiconductor laser, comprising a light emitting component, the light emitting component comprising a plurality of light emitting units sequentially arranged along a first direction, each light emitting unit being used to emit a collimated pump light perpendicular to a horizontal plane;

[0006] A plurality of reflection and deflection components, each reflection and deflection component is arranged in a one-to-one correspondence with each light output unit, so as to reflect the collimated pump light to be transmitted along the first direction, and deflect the collimated pump light with the largest optical path to the center, and deflect the collimated pump light with the smallest optical path and the collimated pump light with the intermediate optical path to the edge; a beam combining and focusing component is arranged at the output end of the collimated pump light after being reflected and deflected by the reflection and deflection component, so as to focus the collimated pump light beam; and a coupling optical fiber is arranged at the output end of the beam combining and focusing component, so as to couple the collimated pump light beam focused by the beam combining.

[0007] Optionally, along the first direction, the center positions of the plurality of reflection and deflection components are first increased and then decreased.

[0008] Optionally, a plurality of reflection and deflection components are distributed in the first area and the second area along the first direction.

[0009] The height of the reflection and deflection components in the first area gradually increases along the first direction, and the height of the reflection and deflection components in the second area gradually decreases along the first direction, and the height of the reflection and deflection components in the first area is higher than that in the second area.

[0010] Optionally, each reflection and deflection component includes a second reflector and a third reflector sequentially arranged along an output optical path of the collimated pump light.

[0011] In the multiple reflection and deflection components, the multiple second reflectors are arranged in sequence along the first direction and are parallel to each other, and the center position height of the multiple second reflectors first increases and then decreases; the multiple third reflectors are arranged in sequence along the first direction and are parallel to each other, and the center position height of the multiple third reflectors first increases and then decreases.

[0012] Optionally, a shell substrate is further included, and a third reflector is arranged perpendicular to the shell substrate, and a top edge of the third reflector is lower than a bottom edge of the second reflector.

[0013] Optionally, each light emitting unit includes:

[0014] Chips, the chips are used to emit pump light along a second direction, and the light emission centers of the multiple chips are all on the same horizontal plane;

[0015] A fast-axis collimator and a slow-axis collimator, wherein the collimated pump light is formed by the pump light passing through the fast-axis collimator and the slow-axis collimator; and

[0016] A first reflector has a preset angle with the horizontal plane, and the collimated pump light is incident on the first reflector along the second direction and then emitted perpendicularly to the horizontal plane.

[0017] Optionally, in a single light emitting unit and its corresponding reflection and deflection assembly, the first reflector and the second reflector are parallel to each other, and the third reflector is perpendicular to the second reflector.

[0018] Optionally, the chip is packaged in a bar package or a single tube package.

[0019] Optionally, in the reflection and deflection components located in the first area or the second area, the absolute value of the difference in center heights of two adjacent third reflectors of two adjacent reflection and deflection components ranges from 0.25 mm to 0.35 mm.

[0020] Optionally, the beam combining and focusing component includes a polarization beam combiner and a focusing module arranged in sequence.

[0021] In summary, the semiconductor laser provided in the present application, by setting the position heights of the reflection and deflection components for receiving collimated pump light at different levels, changes the exit positions of multiple collimated pump light beams after beam combining, controls the position arrangement in the light spot of each collimated pump light, and moves the light spot with a larger optical path and a narrower light beam to the middle of the light spot of the collimated pump light focused by beam combining, and deflects the light spot with the smallest optical path and a shorter light beam to the edge of the light spot of the collimated pump light focused by beam combining, thereby correcting the light spot shape of the collimated pump light focused by beam combining, reducing the duty cycle of the semiconductor laser in the optical fiber coupling process, and achieving the purpose of reducing the "dead zone". BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is a schematic diagram of the end face of the spot of the collimated pump beam of the semiconductor laser in the prior art after beam combining and focusing;

[0023] Figure 2 is a schematic diagram of the structure of a semiconductor laser provided by the present application;

[0024] Figure 3 is a side schematic diagram of a semiconductor laser provided by the present application;

[0025] Figure 4 It is a schematic diagram of the end face of the light spot of the collimated pump light beam of the semiconductor laser provided in the present application after beam combining and focusing;

[0026] Figure 5 is a spot pattern of the collimated pump light output by the reflection and deflection component provided in the present application;

[0027] Figure 6 It is a light spot diagram after the collimated pump light is focused by beam combining and focusing provided in the present application;

[0028] Figure 7 It is a schematic diagram of the optical path of the collimated pump light provided by the present application passing through the reflection and deflection component;

[0029] Figure 8 This is a schematic diagram of the optical path structure of a chip and a reflective deflection component provided by the present application;

[0030] Fig. 9 yes Figure 8 Schematic diagram of the optical path of the collimated pump light in the middle N region. DETAILED DESCRIPTION

[0031] The present invention will be further described in detail below in conjunction with the accompanying drawings and examples. It will be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings. It is obvious to those skilled in the art that various modifications and changes can be made in the present invention without departing from the spirit or scope of the present invention. Therefore, the present invention is intended to cover modifications and changes of the present invention that fall within the scope of the corresponding claims (technical solutions for protection) and their equivalents. It should be noted that the implementation methods provided in the embodiments of the present invention can be combined with each other without contradiction.

[0032] For fiber coupling, the fiber beam parameter product (BPP) is one of the conditions that determine the fiber coupling ability: the laser can only be coupled into the fiber when the laser beam parameter product is less than the fiber beam parameter product. Among them, BPP is a constant, which is equal to the product of the beam waist radius and the far-field half-divergence angle. The fiber beam parameter product is related to the geometric size and numerical aperture of the fiber.

[0033] In semiconductor lasers, the laser emitted by the chip has a difference in propagation speed in different directions. The beam divergence speed in the direction perpendicular to the beam propagation is faster, and the spot distribution is a near-Gaussian spot, which is called the fast axis; the beam divergence speed in the direction parallel to the beam propagation is slower, and the spot distribution is a nearly flat-top distribution, which is called the slow axis. The fast and slow beam parameter products of the chip are different, and the beam parameter product of the slow axis is much lower than the beam parameter product of the fast axis. Since the beam parameter products of the fast axis and the slow axis are different, the optical path structure of the semiconductor laser usually adopts spatial stacking in the fast axis direction to reduce the difference in the beam parameter products of the fast and slow axes. However, in the above process, the stacking of the fast axis is achieved by placing the light-emitting components in sequence on steps with gradually increasing heights. This structure causes each collimated pump light to have a different optical path when it reaches the optical fiber. Refer to Figure 1 The schematic diagram of the light spot of the semiconductor laser in the prior art at the end face of the optical fiber is shown. The shape of the light spot at the end face of the optical fiber is often rectangular, trapezoidal, inverted trapezoidal or irregular, which does not completely match the common round optical fiber. As a result, the laser output coupling efficiency is low.

[0034] Based on this, the present invention proposes a semiconductor laser in view of one or more of the above problems existing in the prior art. Figure 2 is a schematic diagram of the structure of a semiconductor laser provided in this application, Figure 3 is a side schematic diagram of a semiconductor laser provided by the present application, Figure 4 is a schematic diagram of the end face of the light spot of the collimated pump light of the semiconductor laser provided in the present application after beam combining and focusing, Figure 5is the spot diagram of the collimated pump light output by the reflection and deflection component provided in the present application, Figure 6 This is the light spot diagram after the collimated pump light provided by the present application is focused through beam combining and focusing.

[0035] Definition: The semiconductor laser in this application Figure 2 The state in which the components are located defines the up-down and down-down relationship between the components.

[0036] In the present application, the arrangement direction of the chips 111 is defined as a first direction X, the light emitting direction of the chips 111 is defined as a second direction Y, and the direction perpendicular to the horizontal plane is defined as a third direction Z to illustrate the present application.

[0037] Please refer to Figure 2 The semiconductor laser provided in the embodiment of the present invention includes a light emitting component, a plurality of reflection and deflection components 12, a beam combining and focusing component 13, and a coupling optical fiber 14. The light emitting component 12 includes a plurality of light emitting components along a first direction (i.e. Figure 2 The semiconductor laser comprises light emitting units 11 arranged in sequence (in the positive direction of the X-axis), each light emitting unit 11 is used to emit a collimated pump light perpendicular to the horizontal plane; each reflection and deflection component 12 is arranged one by one with each light emitting unit 11, so as to reflect the collimated pump light to be transmitted along the first direction, and deflect the collimated pump light with the largest optical path to the center, and deflect the collimated pump light with the smallest optical path and the collimated pump light with the intermediate optical path to the edge; the beam combining and focusing component 13 is arranged at the output end of the collimated pump light after being reflected and deflected by the reflection and deflection component 12, so as to be used to combine and focus the collimated pump light; the coupling optical fiber 14 is arranged at the output end of the beam combining and focusing component 13, so as to couple into the collimated pump light beam focused by the beam combining. The semiconductor laser also includes some fixing parts 31 for fixing the reflection and deflection components 12. It should be noted that the fixing parts 31 have no effect on the transmission of the collimated pump light. In one embodiment, the light spot end face schematic diagram of the collimated pump light beam focused by the beam combining of the semiconductor laser provided in the present application is as follows: Figure 4 As shown. In this way, the spot of the collimated pump light beam focused by the beam combination is shaped so that the spot shape of the collimated pump light beam focused by the beam combination changes from the original "inverted trapezoid" to a "hexagon" that is symmetrical up and down and closer to a circle. This shape can effectively reduce the "duty cycle" (i.e., "dead zone") of the coupling optical fiber 14, reduce the energy loss of the collimated pump light focused by the beam combination at the coupling optical fiber 14, and reduce the pressure of heat dissipation of the coupling optical fiber 14, thereby improving the coupling efficiency of the coupling optical fiber 14.

[0038] In the present application, along the first direction, the center heights of the plurality of reflective deflection components 12 are first increased and then decreased. Figure 3As shown, in one embodiment of the present application, by adjusting the position height of the reflective deflection component 12 that receives the collimated pump light, the output position of the collimated pump light emitted by multiple light-emitting units 11 after beam combining is changed, and the position arrangement of the collimated pump light emitted by each light-emitting unit 11 in the light spot of the collimated pump light focused by beam combining is controlled, so that the light spot with a larger optical path and a narrower light beam is moved to the middle of the light spot of the collimated pump light focused by beam combining, which can also be understood as the center of the coupling optical fiber 14; at the same time, the light spot with the smallest optical path and a shorter light beam is deflected to the edge of the light spot of the collimated pump light focused by beam combining, which can also be understood as the edge of the coupling optical fiber 14.

[0039] Please continue to refer to Figure 2 , multiple reflection and deflection components 12 are distributed in a first area 12a and a second area 12b along a first direction, the position height of the reflection and deflection components 12 in the first area 12a gradually increases along the first direction, and the position height of the reflection and deflection components 12 in the second area 12b gradually decreases along the first direction. In one embodiment of the present application, the position height of the reflection and deflection components 12 is divided into two parts, and the division of the height of the first area 12a and the second area 12b is related to the number of the reflection and deflection components 12. For example, the number of the reflection and deflection components 12 is N. For the convenience of description, the reflection and deflection components 12 may be numbered from 1 along the first direction. When N is an even number, the reflection and deflection components 12 along the first direction in the figure are In one direction, the position between the reflective deflection component 12 numbered N / 2-1 and the reflective deflection component 12 numbered N / 2 in the reflective deflection component 12 is taken as the boundary point between the first area 12a and the second area 12b, or the position between the reflective deflection component 12 numbered N / 2+1 and the reflective deflection component 12 numbered N / 2 in the reflective deflection component 12 is taken as the boundary point between the first area 12a and the second area 12b; when N is an odd number, the position between the reflective deflection component 12 numbered (N+1) / 2 and the reflective deflection component 12 numbered (N-1) / 2 in the reflective deflection component 12 is taken as the boundary point between the first area 12a and the second area 12b. The height of the reflective deflection component in the first area 12a is higher than the height of the reflective deflection component in the second area 12b.

[0040] In one embodiment, each reflection and deflection assembly 12 includes a second reflection mirror 121 and a third reflection mirror 122 arranged in sequence along the output optical path of the collimated pump light. In the plurality of reflection and deflection assemblies 12, the plurality of second reflection mirrors 121 are arranged in sequence along the first direction and are parallel to each other, and the height of the center position of the plurality of second reflection mirrors 121 is first increased and then decreased; the plurality of third reflection mirrors 122 are arranged in sequence along the first direction and are parallel to each other, and the height of the center position of the plurality of third reflection mirrors 122 is first increased and then decreased. Figure 2 and Figure 3, taking the example that the optical path of the collimated pump light includes the first reflector 114, and the reflective deflection component 12 includes the second reflector 121 and the third reflector 122. Along the first direction, in the first zone 12a, it is necessary to adjust the height and relative position of the reflective deflection component 12 corresponding to each light emitting unit 11 according to the optical path of each light emitting unit 11, and gradually increase the height of the reflective deflection component 12 in a step-by-step manner as the optical path gradually increases; along the first direction, in the second zone 12b, gradually decrease the height of the third reflector 122 in a step-by-step manner as the optical path gradually decreases, thereby reducing or even eliminating the light blocking effect of the third reflector 122, and at the same time, avoid the third reflector 122 in the second zone 12b blocking the collimated pump light deflected by the third reflector 122 in the first zone 12a, and finally all the collimated pump lights are deflected by the third reflector 122 and then emitted along the Figure 2 The first direction of the convergence, get the fast axis space stacked spot, such as Figure 4 shown.

[0041] Based on the above embodiments, Figure 2 and Figure 3 The semiconductor laser also includes a housing substrate 30. The top edge of the third reflector 122 is lower than the bottom edge of the second reflector 121 to ensure that the third reflector 122 can receive the collimated pump light during normal use. The third reflector 122 is arranged perpendicular to the housing substrate to ensure that the collimated pump light focused by beam combination can be emitted in a horizontal direction during normal use. The fixing member 31 is fixed on the housing substrate 30 to fix the reflection and deflection assembly 12. The fixing member 31 has no effect on the transmission of the collimated pump light.

[0042] Optionally, in one embodiment, Figure 2 As shown, each light emitting unit includes a light emitting unit along the second direction ( Figure 2 A chip 111, a fast-axis collimator 112, a slow-axis collimator 113 and a first reflecting mirror 114 are sequentially arranged in the positive direction of the Y axis.

[0043] Among them, the chip 111 is used to emit pump light along the second direction, and the light emission centers of the multiple chips are all in the same horizontal plane. Since the divergence angle of the collimated pump light emitted by the chip 111 is relatively large, the fast axis collimator 112 and the slow axis collimator 113 are also used to collimate the collimated pump light. The fast axis collimator 112 can be used to collimate the fast axis direction of the pump light, and the slow axis collimator 113 can be used to collimate the slow axis direction of the pump light. The pump light forms collimated pump light after passing through the fast axis collimator 112 and the slow axis collimator 113. There is a preset angle between the first reflector 114 and the horizontal plane. The collimated pump light is emitted perpendicular to the horizontal plane after entering the first reflector 114 along the second direction.

[0044] Specifically, the angle between the first reflector 120 and the horizontal plane is 45 degrees, so that the collimated pump light is emitted from the first reflector 114 perpendicular to the horizontal plane.

[0045] Please refer to Figure 7 For the present application, in a single light output unit 11 and its corresponding reflection and deflection assembly 12, the first reflector 114 and the second reflector 121 are parallel to each other to ensure that during normal use, the collimated pump light can be emitted in a horizontal direction to the third reflector 122; the third reflector 122 is perpendicular to the second reflector 121.

[0046] Optionally, the chip is packaged in a bar package or a single tube package. When the chip is packaged in a single tube package, the reliability of the chip during use can be guaranteed; when the chip 111 is packaged in a bar package, the light emitting centers located in the same horizontal plane are located in the same bar, which is conducive to reducing the chip packaging cost and the difficulty of adjusting the optical path.

[0047] Optionally, in the reflection and deflection assembly located in the first area or the second area, the absolute value of the center height difference between two adjacent reflection and deflection assemblies and two adjacent third reflectors ranges from 0.25 mm to 0.35 mm. For example, the center height difference between two adjacent reflection and deflection assemblies in the reflection and deflection assembly 12 located in the first area 12a may be 0.3 mm, and the center height difference between two adjacent reflection and deflection assemblies in the reflection and deflection assembly 12 located in the second area 12b may be 0.3 mm.

[0048] It should be noted that in the embodiment of the present application, the present application uses the plane where the shell substrate 30 is located as the height description reference horizontal plane, the position height of the light emitting center of the light emitting unit 11 is the height of the light emitting center on the plane where the shell substrate 30 is located, and the position height of the reflection and deflection component 12 is the height of the reflection center of the reflection and deflection component 12 on the plane where the shell substrate 30 is located.

[0049] Figure 8 This is a schematic diagram of the optical path structure of a light emitting unit 11 and a reflective deflection component 12 provided in the present application. Fig. 9 yes Figure 8 Schematic diagram of the light path of the light emitting unit 11 in the N region. In one embodiment of the present application, Figure 8 The reflective deflection component 12 in the middle position of the dotted line frame N area is used as the central reflective deflection component 12, and its central position height is used as a reference to adjust the position height of other reflective deflection components 12. The collimated pump light emitted by the light output unit 11 irradiates the bottom edge of the corresponding reflective deflection component 12, such as Fig. 9 As shown, it is then reflected to the subsequent optical element ( Fig. 9(not shown). The remaining reflection and deflection components 12 are consistent with the central reflection and deflection component 12, receiving and reflecting the corresponding pump light. Taking the center position height of the central reflection and deflection component 12 as a reference, along the first direction, the center position height of the reflection and deflection component 12 corresponding to the last light output unit 11 in the first area 12a to the center position height of the central reflection and deflection component 12, the center position height of the previous reflection and deflection component 12 is 0.3mm higher than the center position height of the next reflection and deflection component 12, which are d+0.3, d+0.6, d+0.9, d+1.2, d+1.5, in units of mm: millimeters; along the first direction, the position height of the reflection and deflection component 12 in the second area 12b is 0.3mm lower than the position height of the previous reflection and deflection component 12, which are d, d-0.3, d-0.6, d-0.9, d-1.2, in units of mm: millimeters. With such an arrangement, the collimated pump light with the largest optical path can be deflected to the center of the collimated pump light after beam combining and focusing, and the collimated pump light with the smallest optical path and at the middle value of the optical path can be deflected to the edge of the collimated pump light after beam combining and focusing. The spot shape of the collimated pump light after beam combining and focusing can be reshaped from the original "inverted trapezoid" into a "hexagon" that is symmetrical up and down and closer to a circle, and finally coupled into the coupling optical fiber 14.

[0050] Wherein, d is the height of the intermediate reflection and deflection component 12, and (d-0.3) is the height along Figure 8 In the first direction, the position height of the next reflection and deflection component 12, and so on, the position heights of more reflection and deflection components 12 will not be explained one by one.

[0051] Optionally, the beam combining and focusing component 13 includes a polarization beam combiner and a focusing module arranged in sequence. The beam combining and focusing component 13 is located in the optical path of the collimated pump light, and is used to combine and focus the collimated pump light, which is conducive to coupling the collimated pump light into the coupling optical fiber 14. The polarization beam combiner can be a block polarization beam combiner or a sheet polarization beam combiner, which can be used to further combine multi-path collimated pump lights, and the focusing module can be a combination of one or more focusing mirrors, which can be used to focus multi-path collimated pump lights. The collimated pump light combined by the polarization beam combiner and focused by the focusing component forms a collimated pump light that is combined and focused, and the collimated pump light that is combined and focused is coupled into the coupling optical fiber 14, which can achieve high-power laser output. Compared with the pump source of the same optical path of a conventional semiconductor laser, the semiconductor laser provided in the embodiment of the present application has a theoretical coupling efficiency that is improved by 1 to 2%.

[0052] It can be understood that the semiconductor laser provided in the present application also includes an electrical module, which is electrically connected to the light source module. The electrical module includes a control circuit, and multiple chips are electrically connected to the control circuit. The control circuit is configured to control the driving current of the chip to adjust the power value of the collimated pump light and control the laser power stability of the collimated pump light that is focused by beam combining.

[0053] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments, combinations and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A semiconductor laser, characterized in that: include: A light emitting component, the light emitting component comprising a plurality of light emitting units sequentially arranged along a first direction, each of the light emitting units being used to emit a collimated pump light perpendicular to a horizontal plane; A plurality of reflection and deflection components, each of which is arranged in one-to-one correspondence with each of the light output units, so as to reflect the collimated pump light to be transmitted along the first direction, and deflect the collimated pump light with the largest optical path to the center, and deflect the collimated pump light with the smallest optical path and the collimated pump light with the intermediate optical path to the edge; A beam combining and focusing component is arranged at the output end of the collimated pump light after being reflected and deflected by the reflection and deflection component, so as to focus the collimated pump light beam; as well as The coupling optical fiber is arranged at the output end of the beam combining and focusing component to couple the collimated pump light beam after beam combining and focusing.

2. The semiconductor laser according to claim 1, characterized in that Along the first direction, the center positions of the plurality of reflection and deflection components first increase in height and then decrease in height.

3. The semiconductor laser according to claim 2, characterized in that The plurality of reflection and deflection components are distributed in the first area and the second area along the first direction, The position height of the reflection and deflection components in the first area gradually increases along the first direction, and the position height of the reflection and deflection components in the second area gradually decreases along the first direction, and the position height of the reflection and deflection components in the first area is higher than that of the reflection and deflection components in the second area.

4. The semiconductor laser according to claim 3, characterized in that Each of the reflection and deflection components comprises a second reflector and a third reflector which are sequentially arranged along the output optical path of the collimated pump light. Among the multiple reflection and deflection components, the multiple second reflectors are arranged in sequence along the first direction and are parallel to each other, and the center position heights of the multiple second reflectors first increase and then decrease; the multiple third reflectors are arranged in sequence along the first direction and are parallel to each other, and the center position heights of the multiple third reflectors first increase and then decrease.

5. The semiconductor laser according to claim 4, characterized in that A housing substrate is also included. The third reflector is arranged perpendicular to the housing substrate. The top edge of the third reflector is lower than the bottom edge of the second reflector.

6. The semiconductor laser according to claim 5, characterized in that Each of the light emitting units includes: Chips, the chips are used to emit pump light along the second direction, and the light emission centers of the plurality of chips are all in the same horizontal plane; A fast-axis collimator and a slow-axis collimator, wherein the collimated pump light is formed by the pump light passing through the fast-axis collimator and the slow-axis collimator; as well as A first reflector, wherein a preset angle is formed between the first reflector and the horizontal plane, and the collimated pump light is incident on the first reflector along the second direction and then emitted perpendicularly to the horizontal plane.

7. The semiconductor laser according to claim 6, characterized in that In a single light emitting unit and its corresponding reflective deflection assembly, the first reflector and the second reflector are parallel to each other, and the third reflector is perpendicular to the second reflector.

8. The semiconductor laser according to claim 6, characterized in that The chip is packaged in a bar package or a single tube package.

9. The semiconductor laser according to claim 4, characterized in that In the reflection and deflection assembly located in the first area or the second area, the absolute value of the difference in center heights of two adjacent third reflectors ranges from 0.25 mm to 0.35 mm.

10. The semiconductor laser according to claim 1, characterized in that The beam combining and focusing assembly comprises a polarization beam combiner and a focusing module which are arranged in sequence.

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