Short-wave infrared photosensitive position sensitive detector and preparation method thereof

Abstract

The invention belongs to the technical field of short-wave infrared photoelectric detection, and discloses a short-wave infrared photosensitive position sensitive detector and a preparation method thereof.The detector comprises an n-type silicon substrate with a front face and a back face which are oppositely arranged, and a p-type Te or TexSe1-x alloy film arranged on the front face of the substrate and used as a short-wave infrared light absorption layer, the Al2O3 or SiNx interface passivation layer is arranged between the substrate and the absorption layer, the output electrode is arranged on the absorption layer, and the common grounding electrode is arranged on the back face of the substrate. Compared with an existing commercial silicon-based p-i-n type position sensitive detector, the position sensitive detector has the advantages that the response spectrum is wider, and the position sensitive detector can be expanded to a short-wave infrared band; in addition, compared with a short-wave infrared position sensitive detector based on Ge or InGaAs, the position sensitive detector has the advantages of being simple in preparation process, low in cost, easy to integrate with a silicon-based CMOS and the like.

Description

Technical Field

[0001] The invention belongs to the technical field of short-wave infrared photoelectric detection, and in particular relates to a short-wave infrared photosensitivity position sensitive detector and a preparation method thereof. Background Art

[0002] Position Sensitive Detectors (PSD) are semiconductor devices that are sensitive to the position of light spots incident on a photosensitive surface based on the lateral photoelectric effect. Compared with discrete element detectors (such as CCD) and four-quadrant detectors, PSDs have significant advantages in light spot position detection, such as: they can provide data on the continuous position of light spots; there are no strict requirements on the shape of the light spots; the photosensitive surface is not divided, and there is no device blind spot impact; the light spot position and light intensity can be recorded simultaneously. PSD can achieve non-contact, high-precision, and fast measurement of displacement, angle, and other physical quantities that can be indirectly converted into light spot position (displacement). Therefore, PSD has a wide range of applications in many scenarios such as robot ranging, mechanical deformation detection, laser guidance, and beam alignment.

[0003] Existing commercial PSDs are mainly constructed based on silicon pin-type structures, and their sensitivity wavelength range is generally from ultraviolet (~320nm) to near infrared (~1100nm), and they cannot respond to the short-wave infrared (SWIR, λ=1-3μm) band. As one of the three infrared radiation atmospheric windows, SWIR is less prone to scattering than visible light and has a stronger ability to penetrate smoke, fog and haze. Therefore, the development of SWIR-sensitive PSDs can greatly improve the accuracy of light point position detection under complex environmental conditions, and is expected to further expand the application of PSDs in other fields. Traditional InGaAs or Ge-based photodetectors can be used in the design of short-wave infrared PSDs, but the device preparation process is complex and the cost is high. Developing new SWIR light absorption materials and constructing pn or pin heterojunction short-wave infrared PSDs with relatively low-priced commercial silicon provides a new strategy to solve the above problems.

[0004] Tellurium (Te) and tellurium-selenium alloy (Te x Se 1-x ) is an intrinsic p-type semiconductor material with the advantages of high light absorption coefficient, adjustable band gap and good environmental stability. x Se 1-x The alloy has a low melting point (<470°C) and is easy to synthesize on a large area using evaporation technology compatible with CMOS processes, showing great application potential in the field of SWIR detection. x Se 1-xThere are no reports on the high sensitivity response of / Si heterojunction to SWIR in photovoltaic mode and its application in PSD construction. Summary of the invention

[0005] In order to solve the problems existing in the prior art, the purpose of the present invention is to provide a short-wave infrared photosensitive position sensitive detector and a preparation method thereof. The position sensitive detector of the present invention adopts p-type Te or Te x Se 1-x The alloy film is used as the short-wave infrared light absorption layer to form a pn heterojunction with n-type Si, and Al2O3 or SiN x The heterojunction interface defects are passivated to achieve accurate detection of the short-wave infrared light spot position; in addition, the preparation method of the position sensitive detector in the present invention can be applied to the construction of one-dimensional PSD and two-dimensional PSD, the photosensitive area and shape can be adjusted as needed, and it has the advantages of simple process and low cost.

[0006] In order to achieve the above object, the present invention adopts the following technical solution:

[0007] The present invention first provides a short-wave infrared light-sensitive position-sensitive detector, comprising: an n-type Si substrate, a p-type Te or Te x Se 1-x Alloy film, Al2O3 or SiN x Interface passivation layer, output electrode, common ground electrode.

[0008] Furthermore, the carrier concentration of the n-type Si substrate is not higher than 10 20 cm -3 .

[0009] Furthermore, the p-type Te or Te x Se 1-x The alloy film is arranged on the front side of the n-type silicon substrate, and the p-type Te x Se 1-x The molar fraction of Se in the alloy film is 1-80%, and the p-type Te or Te x Se 1-x The thickness of the alloy film is 5-5000nm.

[0010] Furthermore, the Al2O3 or SiN x The interface passivation layer is located between the n-type Si substrate and the p-type Te or Te x Se 1-x Between the alloy films, the Al2O3 or SiN x The thickness of the interface passivation layer is 0.1-10 nm.

[0011] Furthermore, the output electrode is arranged on the p-type Te or Tex Se 1-x On the alloy film, the output electrode is any one of a gold electrode, a platinum electrode, a nickel / gold electrode or a palladium electrode, and the thickness of the output electrode is 5-200 nm.

[0012] Furthermore, the common ground electrode is arranged on the back side of the n-type Si substrate, the common ground electrode is any one of an aluminum electrode, a titanium electrode or an indium-gallium alloy electrode, and the thickness of the common ground electrode is 5-200 nm.

[0013] Furthermore, the p-type Te or Te x Se 1-x The alloy film is prepared by thermal evaporation process, the specific method is as follows:

[0014] (1) Weigh high-purity Te powder (purity> 99.99%) or Te x Se 1-x The alloy block is placed in a thermal evaporation coating apparatus as an evaporation source;

[0015] (2) Pump the back vacuum of the thermal evaporation coating apparatus to 5×10 -4 Below Pa;

[0016] (3)Te or Te x Se 1-x During the alloy film deposition process, the sample stage temperature is -120 to 200°C, the sample stage rotation speed is 1 to 10 rpm, and the film deposition rate is 1 to 50 nm / min;

[0017] (4) Te or Te obtained in step (3) x Se 1-x The alloy film is subjected to vacuum annealing treatment; the annealing temperature is 0-300°C, the annealing time is 5-30min, and the chamber vacuum degree is 10 -3 Pa to atmospheric pressure.

[0018] Furthermore, the p-type Te or Te x Se 1-x The shape of the alloy film is set according to the requirements of device construction, and can be set to a one-dimensional strip, a two-dimensional square or other complex shapes.

[0019] Furthermore, the Al2O3 or SiN x The interface passivation layer is prepared by atomic layer deposition or plasma enhanced chemical vapor deposition; the output electrode and the common ground electrode are prepared by thermal evaporation, magnetron sputtering or electron beam evaporation.

[0020] The present invention also provides a method for preparing the short-wave infrared photosensitivity position sensitive detector, comprising the following steps:

[0021] Step S1, placing the n-type Si substrate in toluene, acetone, ethanol, isopropanol, and deionized water for ultrasonic cleaning in sequence, and drying with nitrogen for standby use;

[0022] Step S2: Prepare Al2O3 or SiN on the front side of the n-type Si substrate treated in step S1 by atomic layer deposition or plasma enhanced chemical vapor deposition. x Interface passivation layer;

[0023] Step S3: Weigh high-purity Te powder or Te x Se 1-x The alloy block is used as an evaporation source, and a thermal evaporation method is used to prepare Te or Te on the surface of the interface passivation layer obtained in step S2. x Se 1-x alloy film;

[0024] Step S4: Te or Te obtained in step S3 x Se 1-x The alloy film is subjected to vacuum annealing treatment;

[0025] Step S5: p-type Te or Te obtained in step S4 x Se 1-x The surface of the alloy film is evaporated or sputtered with metal as the output electrode;

[0026] Step S6: evaporating or sputtering metal on the back side of the n-type Si substrate as a common ground electrode to complete the preparation of a short-wave infrared sensitive position sensitive detector.

[0027] Compared with the prior art, the present invention has the following positive and beneficial effects:

[0028] The present invention broadens the response spectral range of commercial silicon-based semiconductor junction PSDs, and can realize the position detection of short-wave infrared, especially short-wave infrared light spots in the optical communication band (1200-1700nm), which is beneficial to improving the accuracy of position detection under complex environmental conditions (such as smoke, fog and haze). Compared with short-wave infrared PSDs based on InGaAs or Ge, the PSD of the present invention has the advantages of simple construction process and low cost, which is beneficial to promoting the application of PSD in more fields, especially in the field of consumer electronics. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 The schematic diagram of the cross-sectional structure of a short-wave infrared position sensitive detector of the present invention is shown in FIG. The names of the components represented by the reference numerals in the figure are as follows: ①, output electrode; ②, p-type Te or Te x Se 1-x Alloy film; ③, Al2O3 or SiN xInterface passivation layer; ④, n-type Si substrate; ⑤, common ground electrode.

[0030] Figure 2 This is a device construction flow chart of a one-dimensional position sensitive detector sensitive to short-wave infrared light in Example 1 of the present invention.

[0031] Figure 3 This is a device photo of a one-dimensional position sensitive detector of short-wave infrared light in Example 1 of the present invention ( Figure 3 (a)) and performance graph ( Figure 3 (b) in the figure.

[0032] Figure 4 This is a device construction flow chart of a two-dimensional position sensitive detector with short-wave infrared sensitivity in Example 2 of the present invention.

[0033] Figure 5 This is a device photo of a two-dimensional position sensitive detector with short-wave infrared sensitivity in Example 2 of the present invention ( Figure 5 (a)) and performance graph ( Figure 5 (b) in the figure.

[0034] Figure 6 This is a device construction flow chart of the short-wave infrared sensitive two-dimensional position sensitive detector in Example 3 of the present invention.

[0035] Figure 7 This is a device photo of a two-dimensional position sensitive detector with short-wave infrared sensitivity in Example 3 of the present invention ( Figure 7 (a)) and performance graph ( Figure 7 (b) in the figure. DETAILED DESCRIPTION

[0036] The technical solution of the present invention is now described in detail in conjunction with the accompanying drawings and examples. This detailed description should not be considered as a limitation of the present invention, but should be understood as a more detailed description of certain aspects, characteristics and embodiments of the present invention. It should be understood that the terms described in the present invention are only for describing specific implementation methods and are not used to limit the present invention.

[0037] In addition, for the numerical range in the present invention, it is understood that each intermediate value between the upper and lower limits of the range is also specifically disclosed. The intermediate value in any stated value or stated range, and each smaller range between any other stated value or intermediate value in the range is also included in the present invention. The upper and lower limits of these smaller ranges can be independently included or excluded in the scope.

[0038] Unless otherwise specified, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which the invention pertains. Although only preferred methods and materials are described herein, any methods and materials similar or equivalent to those described herein may also be used in the practice or testing of the present invention.

[0039] The words “include,” “including,” “have,” “contain,” etc. used in this document are open-ended terms, meaning including but not limited to.

[0040] The schematic cross-sectional structure diagram of a short-wave infrared position sensitive detector prepared in the following embodiments of the present invention is shown in the attached figure. Figure 1 As shown, ① is the output electrode, ② is p-type Te or Te x Se 1-x Alloy film, ③ is Al2O3 or SiN x The interface passivation layer, ④ is the n-type Si substrate, and ⑤ is the common ground electrode. x Se 1-x The alloy film is used as the short-wave infrared light absorption layer, and the interface passivation layer is located between n-type Si and p-type Te or Te x Se 1-x The output electrode is located between the alloy films and the p-type Te or Te x Se 1-x On the alloy film, the common ground electrode is located on the back side of the n-type Si.

[0041] Example 1

[0042] A method for preparing a one-dimensional position sensitive detector of short-wave infrared light comprises the following steps:

[0043] Step S1: Purchase n-type silicon (resistivity 0.3-1.2Ω·cm, carrier concentration 3.9×10 15 cm -3 -1.87×10 16 cm -3 ) were ultrasonically cleaned in toluene, acetone, ethanol, isopropanol and deionized water for 15 min in sequence, dried with nitrogen and set aside.

[0044] Step S2, using atomic layer deposition (ALD) process to prepare a 3nm thick Al2O3 interface passivation layer on the front side of the silicon wafer processed in step S1; wherein, the process parameters for preparing the Al2O3 interface passivation layer by atomic layer deposition are as follows: trimethylaluminum (Al2(CH3)6) is used as the aluminum source; deionized water (H2O) is used as the oxygen source, high-purity argon (Ar) is used as the carrier gas, and the reaction chamber temperature is 200°C.

[0045] Step S3: Prepare Te as an evaporation source according to the following process:0.65 Se 0.35 Alloy block:

[0046] (1) Weigh 15 g and 5 g of high-purity Te powder and Se powder respectively, grind them thoroughly in a mortar to make them uniformly mixed. Put the mixed powder into a quartz tube and seal it with a vacuum tube sealer. The vacuum degree in the quartz tube is less than 1 Pa;

[0047] (2) Place the sealed quartz tube in a tube furnace and keep it at 570°C for 24 hours. During the heat preservation process, rotate the furnace tube at regular intervals to make the Te-Se alloying more uniform. Then turn off the heating power and let the furnace chamber temperature cool naturally to room temperature to obtain Te. 0.65 Se 0.35 Alloy block.

[0048] Weigh an appropriate amount of Te 0.65 Se 0.35 The alloy block is placed in a thermal evaporation coating apparatus as an evaporation source, and a one-dimensional strip-shaped Te 0.65 Se 0.35 Alloy film, before evaporation, the back vacuum of the thermal evaporation coating instrument was pumped to 3×10 -4 Pa. During the evaporation process, liquid nitrogen circulation was used to cool the sample stage to keep its temperature at -60°C, the film deposition rate was 10nm / min, the sample stage rotation speed was 5rpm, and the thickness of the deposited film was 300nm. After the evaporation was completed, the liquid nitrogen circulation was turned off and the sample stage temperature was naturally raised to room temperature.

[0049] Step S4: Te obtained in step S3 0.65 Se 0.35 The alloy film is placed in a vacuum annealing furnace for annealing at a temperature of 150°C and an annealing time of 15 min. The vacuum degree of the chamber during annealing is 1 Pa.

[0050] Step S5: Using a thermal evaporation process to deposit the strip-shaped Te 0.65 Se 0.35 Pd with a thickness of 50 nm is deposited on both ends of the alloy film as output electrodes X1 and X2; the process parameters for thermal evaporation deposition of Pd are as follows: the back vacuum of the evaporation chamber is less than 4×10 -4 Pa, high-purity Pd particles (purity of 99.999%) were used as the evaporation source, the evaporation rate was 0.05 nm / s, and the sample stage rotation speed during the deposition process was 3 rpm.

[0051] Step S6: Deposit 50 nm of Ti on the back side of the silicon substrate as a common ground electrode using electron beam evaporation.

[0052] To facilitate testing, the common ground electrode is led out through copper foil and conductive silver paste, and the output electrode is led out through conductive silver paste.

[0053] The construction flow chart of the short-wave infrared photosensitive one-dimensional position sensitive detector of this embodiment is shown in the attached figure. Figure 2 shown.

[0054] Figure 3 is a device photo of the one-dimensional position sensitive detector of this embodiment ( Figure 3 (a)) and performance graph ( Figure 3 (b) in the figure shows the performance graph when 1342nm short-wave infrared light is along Figure 3 When the track indicated by the yellow arrow in (a) moves, the voltage between the output electrodes X1, X2 and the ground electrode changes with the position of the light spot. The 0mm position in the figure is the middle position of the output electrodes X1 and X2. It can be seen from the figure that when the laser spot gradually approaches X1, the voltage between the electrode X1 and the ground electrode gradually increases; while at this time, the laser spot gradually moves away from X2, and the voltage between the electrode X2 and the ground electrode gradually decreases.

[0055] Example 2

[0056] A method for preparing a short-wave infrared sensitive two-dimensional position sensitive detector comprises the following steps:

[0057] Step S1: Purchase 4-inch commercial n-type silicon (resistivity 1-10Ω·cm, carrier concentration 4.4×10 14 -4.8×10 15 cm -3 ) were cut into silicon wafers of 20×20 mm in size, and ultrasonically cleaned in toluene, acetone, ethanol, isopropanol, and deionized water for 15 min in sequence, dried with nitrogen, and set aside.

[0058] Step S2, using atomic layer deposition (ALD) process to prepare a 0.5 nm thick Al2O3 interface passivation layer film on the front side of the silicon wafer processed in step S1; wherein, the process parameters for preparing the Al2O3 interface passivation layer by atomic layer deposition are as follows: trimethylaluminum (Al2(CH3)6) is used as the aluminum source; deionized water (H2O) is used as the oxygen source, high-purity argon (Ar) is used as the carrier gas, and the reaction chamber temperature is 200°C.

[0059] Step S3, weighing a suitable mass of high-purity Te powder (purity> 99.99%) as an evaporation source, and evaporating a two-dimensional square Te thin film on the surface of the Al2O3 interface passivation layer obtained in step S2. Before the evaporation begins, the back vacuum of the thermal evaporation coating apparatus is pumped to 2×10 -4Pa. During the evaporation process, liquid nitrogen circulation was used to cool the sample stage to keep its temperature at -80°C, the film deposition rate was 2nm / min, the sample stage rotation speed was 5rpm, and the deposited film thickness was 150nm. After the evaporation was completed, the liquid nitrogen circulation was turned off and the sample stage temperature was naturally raised to room temperature.

[0060] Step S4, placing the Te film prepared in step S3 in a vacuum annealing furnace for annealing, the annealing temperature is 25° C., the annealing time is 15 min, and the chamber vacuum degree during annealing is 0.1 Pa.

[0061] Step S5: Using a thermal evaporation process, Au with a thickness of 50 nm is deposited on four edges of the surface of the Te thin film obtained in step S4 as output electrodes (X1, X2, Y1, Y2).

[0062] Step S6: Deposit 50 nm of Al on the back side of the Si substrate using a thermal evaporation process as a common ground electrode.

[0063] To facilitate testing, the common ground electrode is led out through copper foil and conductive silver paste, and the output electrode is led out through conductive silver paste.

[0064] The construction flow chart of the short-wave infrared two-dimensional position sensitive detector of this embodiment is shown in the attached figure. Figure 4 shown.

[0065] Figure 5 is a device photo of the two-dimensional position sensitive detector of this embodiment ( Figure 5 (a)) and performance graph ( Figure 5 (b) in the figure shows the performance graph when 1342nm short-wave infrared light is along Figure 5 When the track indicated by the red arrow in (a) moves, the voltage between the output electrodes Y1, Y2 and the common electrode changes with the position of the light spot. The 0mm position in the figure is the middle position of the output electrodes Y1 and Y2. It can be seen from the figure that when the laser spot gradually approaches Y2, the voltage between the electrode Y2 and the ground electrode gradually increases; while at this time, the laser spot gradually moves away from Y1, and the voltage between the electrode Y1 and the ground electrode gradually decreases.

[0066] Example 3

[0067] A method for preparing a short-wave infrared sensitive two-dimensional position sensitive detector comprises the following steps:

[0068] Step S1: n-type silicon substrate (resistivity 1-10Ω·cm, carrier concentration 4.4×10 14 -4.8×10 15 cm -3 ) were ultrasonically cleaned in toluene, acetone, ethanol, isopropanol and deionized water for 15 min in sequence, dried with nitrogen and set aside.

[0069] Step S2: Prepare a 1 nm thick SiN film on the front side of the silicon wafer processed in step S1 by using a plasma enhanced chemical vapor deposition system (PECVD) x Interface passivation layer; wherein, PECVD prepares SiN x The process parameters of the interface passivation layer are as follows: silane and ammonia are used as reaction sources, the substrate temperature is 420°C, the RF power is 4000W, and the pressure is 200Pa.

[0070] Step S3: Prepare Te as an evaporation source according to the following process: 0.71 Se 0.29 Alloy block:

[0071] (1) Weigh 16 g and 4 g of high-purity Te powder and Se powder respectively, and grind them thoroughly in a mortar to make them uniformly mixed. Put the mixed powder into a quartz tube and seal it with a vacuum tube sealer. The vacuum degree in the quartz tube is less than 0.1 Pa;

[0072] (2) Place the sealed quartz tube in a tube furnace and keep it at 560°C for 10 hours. During the heat preservation process, rotate the furnace tube at regular intervals to make the Te-Se alloying more uniform. Then turn off the heating power and let the furnace chamber temperature cool naturally to room temperature to obtain Te. 0.71 Se 0.29 Alloy block.

[0073] Weigh an appropriate amount of Te 0.71 Se 0.29 The alloy block is placed in a thermal evaporation coating apparatus as an evaporation source, and the SiN x Te is evaporated on the surface of the interface passivation layer 0.71 Se 0.29 Alloy film, before the start of evaporation, the back vacuum of the thermal evaporation coating instrument was pumped to 4×10 -4 Pa. During the evaporation process, the sample stage temperature was kept at room temperature, the sample stage rotation speed was 5 rpm, the film deposition rate was 15 nm / min, the thickness of the deposited film was 200 nm, and the film shape was approximately a two-dimensional square with concave edges.

[0074] Step S4: preparing the Te 0.71 Se 0.29 The alloy film was placed in a vacuum annealing furnace for annealing at a temperature of 160 °C for 15 min and a vacuum degree of 1 × 10 -3 Pa.

[0075] Step S5: using a thermal evaporation process to deposit the Te obtained in step S4 0.71 Se 0.29Pt with a thickness of 50 nm is deposited at the four corners of the alloy film surface as output electrodes (X1, X2, Y1, Y2).

[0076] Step S6: Deposit 50 nm of Al on the back side of the Si substrate using a thermal evaporation process as a common ground electrode.

[0077] To facilitate testing, the common ground electrode is led out through copper foil and conductive silver paste, and the output electrode is led out through conductive silver paste.

[0078] The construction flow chart of the short-wave infrared two-dimensional position sensitive detector of this embodiment is shown in the attached figure. Figure 6 shown.

[0079] Figure 7 is a device photo of the two-dimensional position sensitive detector of this embodiment ( Figure 7 (a)) and performance graph ( Figure 7 (b) in the figure shows the performance graph when 1342nm short-wave infrared light is along Figure 7 When the white arrow in (a) moves, the voltage between the output electrodes X1, Y2 and the common electrode changes with the position of the light spot. The 0mm position in the figure is the middle position of the four electrodes. It can be seen from the figure that when the laser spot gradually approaches Y2, the voltage between the electrode Y2 and the ground electrode gradually increases; while at this time, the laser spot gradually moves away from X1, and the voltage between the electrode X1 and the ground electrode gradually decreases.

[0080] In summary, the above embodiments are only specific implementations of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed by the present invention, which should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A short-wave infrared position sensitive detector, characterized in that: The position sensitive detector comprises: an n-type silicon substrate, a p-type Te or Te x Se 1-x Alloy film, Al2O3 or SiN x Interface passivation layer, output electrode and common ground electrode.

2. A short-wave infrared position sensitive detector according to claim 1, characterized in that: The carrier concentration of the n-type silicon substrate is not higher than 10 20 cm -3 .

3. A short-wave infrared position sensitive detector according to claim 1, characterized in that: The p-type Te or Te x Se 1-x The alloy film is arranged on the front side of the n-type silicon substrate. x Se 1-x The molar fraction of Se in the alloy film is 1-80%, and the p-type Te or Te x Se 1-x The thickness of the alloy film is 5-5000nm.

4. A short-wave infrared position sensitive detector according to claim 1, characterized in that: The Al2O3 or SiN x The interface passivation layer is arranged between the n-type silicon substrate and the p-type Te or Te x Se 1-x Between the alloy films, the Al2O3 or SiN x The thickness of the interface passivation layer is 0.1-10 nm.

5. The short-wave infrared position sensitive detector according to claim 1, characterized in that: The output electrode is arranged on the p-type Te or Te x Se 1-x On the alloy film, the output electrode is any one of a gold electrode, a platinum electrode, a nickel / gold electrode or a palladium electrode, and the thickness of the output electrode is 5-200 nm.

6. A short-wave infrared position sensitive detector according to claim 1, characterized in that: The common ground electrode is arranged on the back side of the n-type silicon substrate. The common ground electrode is any one of an aluminum electrode, a titanium electrode or an indium-gallium alloy electrode. The thickness of the common ground electrode is 5-200 nm.

7. A short-wave infrared position sensitive detector according to claim 1 or 4, characterized in that: The p-type Te or Te x Se 1-x The alloy film is prepared by a thermal evaporation process, and the shape of the film is set according to the requirements of device construction.

8. The short-wave infrared position sensitive detector according to claim 1, characterized in that: The Al2O3 or SiN x The interface passivation layer is prepared by atomic layer deposition or plasma enhanced chemical vapor deposition; the output electrode and the common ground electrode are prepared by thermal evaporation, magnetron sputtering or electron beam evaporation.

9. A method for preparing a short-wave infrared position sensitive detector as claimed in any one of claims 1 to 8, characterized in that: The steps include: Step S1, placing the n-type Si substrate in toluene, acetone, ethanol, isopropanol, and deionized water for ultrasonic cleaning in sequence, and drying with nitrogen for standby use; Step S2: Prepare Al2O3 or SiN on the front side of the n-type Si substrate treated in step S1 by atomic layer deposition or plasma enhanced chemical vapor deposition. x Interface passivation layer; Step S3: Weigh high-purity Te powder or Te x Se 1-x The alloy block is used as an evaporation source, and a thermal evaporation method is used to prepare Te or Te on the surface of the interface passivation layer obtained in step S2. x Se 1-x alloy film; Step S4: Te or Te obtained in step S3 x Se 1-x The alloy film is subjected to vacuum annealing treatment; Step S5: p-type Te or Te obtained in step S4 x Se 1-x The surface of the alloy film is evaporated or sputtered with metal as the output electrode; Step S6: evaporating or sputtering metal on the back side of the n-type silicon substrate as a common ground electrode to complete the preparation of a short-wave infrared sensitive position sensitive detector.

10. The method for preparing a short-wave infrared position sensitive detector according to claim 9, characterized in that: The Te or Te in step S3 x Se 1-x The sample stage temperature during the deposition of the alloy film is -120 to 200°C. The Te or Te x Se 1-x The annealing temperature of the alloy film is 0-300°C.

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