Horizontal ordered ZnO nanowire array and preparation method and application thereof
By depositing and annealing ZnO on the super-schematic carbon nanotube film, the problem of difficulty in achieving horizontal order in the ZnO nanowire array in the prior art is solved, and the performance of ultraviolet photodetection devices is significantly improved.
Patent Information
- Application Number
- CN202510212393.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-25
- Publication Date
- 2025-03-28
AI Technical Summary
The prior art is difficult to achieve a horizontally ordered ZnO nanowire array, which limits its performance in applications such as ultraviolet polarization detection.
By depositing ZnO with magnetron sputtering on the super-schematic carbon nanotube film and performing high-temperature annealing, a horizontally ordered ZnO nanowire array is formed.
The horizontal orderly growth of ZnO nanowires has been achieved, which significantly improves the performance of ultraviolet photodetection devices, especially in ultraviolet polarized light detection.
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Figure CN119710550A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the technical field of ZnO nanowire arrays, and in particular to a horizontally ordered ZnO nanowire array and a preparation method and application thereof. Background Art
[0002] ZnO nanowires have broad application prospects in optoelectronic devices, sensors, ultraviolet detectors, etc. due to their unique optoelectronic properties. ZnO is a wide bandgap semiconductor material with excellent ultraviolet light response ability and low preparation cost. Therefore, ZnO nanowires are widely studied and used in ultraviolet photodetection devices.
[0003] At present, the commonly used ZnO nanowire synthesis methods mainly include hydrothermal method and chemical vapor deposition (CVD) method. The hydrothermal method usually grows ZnO nanowires under liquid phase conditions, and the process is mild and easy to control. However, the hydrothermal method is mainly used to prepare ZnO nanowire arrays perpendicular to the substrate, and it is difficult to achieve horizontal orderly arrangement of nanowires. The chemical vapor deposition (CVD) method generates ZnO nanowires by vaporizing the ZnO precursor at high temperature and depositing it on the substrate surface. Similarly, the CVD method usually produces vertically grown nanowires, and in the horizontal direction, only a disordered ZnO nanowire network is often formed.
[0004] However, some special applications (such as ultraviolet light polarization detection) require ZnO nanowires to have a horizontally ordered arrangement structure. Neither the hydrothermal method nor the CVD method can meet this requirement, which greatly limits the application of ZnO nanowires in related high-end devices. The shortcomings of the existing technology are mainly manifested in the following aspects: 1. The existing technology mainly realizes ZnO nanowire arrays perpendicular to the substrate, while horizontally ordered ZnO nanowire arrays are difficult to prepare.
[0005] 2. The current level of ZnO nanowire networks is often disordered and cannot achieve directional growth of nanowires, which has a negative impact on the performance of certain devices (such as ultraviolet polarized light detection).
[0006] 3. The lack of a method for preparing horizontally ordered ZnO nanowire arrays on a variety of substrates (such as flexible substrates or transparent substrates) limits the widespread application of ZnO nanowires.
[0007] Therefore, the existing ZnO nanowire synthesis methods have obvious limitations in horizontal arrangement and directional control, and there is an urgent need for a preparation method that can achieve horizontally ordered ZnO nanowire arrays. Summary of the invention
[0008] In order to solve the above problems, the present invention provides a horizontally ordered ZnO nanowire array and a preparation method and application thereof.
[0009] The first object of the present invention is to provide a method for preparing a horizontally ordered ZnO nanowire array, which specifically comprises the following steps: S1. Preparation of super-aligned carbon nanotube film: select a metal frame as a supporting substrate, wash and dry it; pull a continuous film from the super-aligned carbon nanotube array to form a suspended self-supporting super-aligned carbon nanotube film on the metal frame; S2. Magnetron sputtering deposition of ZnO: magnetron sputtering is used to uniformly deposit ZnO target on the surface of super-ordered carbon nanotube film to form a ZnO / carbon nanotube core-shell structure nanowire film; S3. Annealing treatment: placing the ZnO / carbon nanotube core-shell structure nanowire film in an air atmosphere for high temperature annealing, the annealing temperature is 550~800℃, and the annealing time is 1.5~2.5h; S4. After annealing is completed, the metal frame is removed to obtain a horizontally ordered ZnO nanowire array.
[0010] Preferably, in step S2, the power of magnetron sputtering is 50-150 W, the gas pressure is 3-10 Pa, the temperature is 15-300° C., and the sputtering time is 10-60 minutes; The annealing temperature in step S3 is 650±10°C.
[0011] Preferably, the magnetron sputtering time in step S2 is 40 to 60 minutes; The annealing temperature in step S3 is 700±10°C.
[0012] Preferably, the magnetron sputtering time in step S2 is 20 minutes; The metal frame is removed in step S4 by wet stripping or dry stripping.
[0013] Preferably, the method further comprises step S5: transferring the horizontally ordered ZnO nanowire array to a substrate; and ensuring that the ZnO nanowire array is stably attached to the surface of the substrate by using adhesion or electrostatic adsorption.
[0014] Preferably, the substrate is a silicon-based substrate, a flexible substrate or a transparent substrate.
[0015] Preferably, the flexible substrate is a flexible polyimide substrate; the transparent substrate is a glass substrate; and the metal frame is made of aluminum or stainless steel.
[0016] The second purpose of the present invention is to provide a horizontally ordered ZnO nanowire array, which is prepared by the preparation method of the horizontally ordered ZnO nanowire array.
[0017] The third object of the present invention is to provide an application of a horizontally ordered ZnO nanowire array in the preparation of a photoelectric detection device.
[0018] Preferably, the photoelectric detection device is an ultraviolet photoelectric detection device, a flexible ultraviolet photoelectric detection device or a transparent photoelectric detection device.
[0019] Compared with the prior art, the present invention can achieve the following beneficial effects: (1) Achieving horizontally ordered growth of ZnO nanowires: The present invention uses a super-ordered carbon nanotube film as a template to achieve directional and orderly arrangement of ZnO nanowires in the horizontal direction. This solves the problem that the prior art cannot control the horizontal orderly growth of ZnO nanowires, and significantly improves the structural orderliness and directionality of the ZnO nanowire array.
[0020] (2) Enhanced performance of photodetection devices: The prepared horizontally ordered ZnO nanowire array has higher sensitivity in ultraviolet photodetectors, especially in detecting ultraviolet polarized light. The horizontally oriented ZnO nanowire array can effectively enhance the selective detection of ultraviolet polarized light and improve the performance of the detector.
[0021] (3) Wide applicability and high flexibility: The ZnO nanowire array of the present invention uses a suspended self-supporting super-aligned carbon nanotube film as a template. The ZnO nanowire array can be transferred to any substrate, such as a flexible substrate, a transparent substrate or a semiconductor substrate, through transfer technology. This greatly broadens its application potential in emerging fields such as flexible electronics and transparent optoelectronic devices.
[0022] (4) Simple process and strong scalability: The present invention adopts magnetron sputtering and annealing process, which is relatively simple and easy to mass-produce. The process has high controllability and is easy to adjust the size and arrangement structure of ZnO nanowires, further improving the practicality and applicability of the process.
[0023] (5) Improving device performance stability: By optimizing the annealing temperature and time (e.g., 650°C or 700°C, annealing for 2 hours), the carbon nanotube template is completely removed and the high-quality ZnO nanowire array is retained, thus ensuring the performance stability and reliability of the device in long-term use. BRIEF DESCRIPTION OF THE DRAWINGS
[0024] Figure 1 It is a schematic diagram of the preparation process of a horizontally ordered ZnO nanowire array provided according to an embodiment of the present invention.
[0025] Figure 2These are actual pictures of horizontally ordered ZnO nanowire arrays prepared under different magnetron sputtering times according to the embodiments of the present invention; (a) magnetron sputtering for 10 min; (b) magnetron sputtering for 20 min; (c) magnetron sputtering for 30 min; (d) magnetron sputtering for 40 min; and (e) magnetron sputtering for 60 min.
[0026] Figure 3 These are the test results of the photoelectric performance of the ZnO nanowire arrays treated with different magnetron sputtering times (10 min to 60 min) according to the embodiments of the present invention. DETAILED DESCRIPTION
[0027] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the following description, the same modules are represented by the same reference numerals. In the case of the same reference numerals, their names and functions are also the same. Therefore, the detailed description thereof will not be repeated.
[0028] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and do not constitute a limitation of the present invention.
[0029] The present invention provides a method for preparing a horizontally ordered ZnO nanowire array, which specifically comprises the following steps: S1. Preparation of super-aligned carbon nanotube film: Select a metal frame as a supporting substrate (carbon nanotube template), wash and dry it; use a stretching tool to pull a continuous film from the super-aligned carbon nanotube array to form a suspended self-supporting super-aligned carbon nanotube film on the metal frame; The film has a high degree of horizontal alignment, and its suspended structure facilitates the subsequent ZnO deposition and substrate transfer; check the integrity and alignment of the carbon nanotube film to ensure that it has sufficient strength to support subsequent processing steps.
[0030] S2. Magnetron sputtering deposition of ZnO: magnetron sputtering is used to uniformly deposit zinc oxide (ZnO) target on the surface of super-ordered carbon nanotube film to form a ZnO / carbon nanotube core-shell structure nanowire film; Control the sputtering power, gas pressure, temperature and time to ensure uniform deposition of ZnO on the surface of the carbon nanotube film; the power of magnetron sputtering is 50~150W, the gas pressure is 3~10Pa, the temperature is 15~300℃, and the continuous sputtering time is 10~60 minutes; The deposition thickness of ZnO was adjusted as needed to ensure the structural stability and optoelectronic performance of the ZnO nanowire arrays.
[0031] S3. Annealing treatment: placing the ZnO / carbon nanotube core-shell structure nanowire film in an air atmosphere for high temperature annealing, the annealing temperature is 550-700° C., and the annealing time is 1.5-2.5 h to ensure complete removal of the carbon nanotubes and avoid excessive crystallization or damage of the ZnO nanowires.
[0032] S4. After annealing, the metal frame is removed to obtain a horizontally ordered ZnO nanowire array. This process can ensure that the ZnO nanowires maintain structural stability while exhibiting excellent optoelectronic properties.
[0033] S5. Clean the substrate and dry it; transfer the horizontal ordered ZnO nanowire array to the substrate; and ensure that the ZnO nanowire array is stably attached to the surface of the substrate by adhesion or electrostatic adsorption.
[0034] Specifically, the metal frame is made of aluminum or stainless steel; Specifically, the magnetron sputtering time was 20 min; Specifically, the annealing temperature in step S3 is 650±10°C or 700°C; Specifically, in step S4, the metal frame is removed by wet stripping or dry stripping; Specifically, the substrate is a silicon-based substrate, a flexible substrate or a transparent substrate; in a specific embodiment, the flexible substrate is a flexible polyimide (PI) substrate; and the transparent substrate is a glass substrate.
[0035] Example 1 This embodiment provides a method for preparing a horizontally ordered ZnO nanowire array, which specifically includes the following steps: S1. Preparation of super-aligned carbon nanotube film: Select a stainless steel frame as a supporting substrate (carbon nanotube template), wash and dry it; use a stretching tool to pull a continuous film from the super-aligned carbon nanotube array to form a suspended self-supporting super-aligned carbon nanotube film on the stainless steel frame; S2. Magnetron sputtering deposition of ZnO: magnetron sputtering was used to uniformly deposit zinc oxide (ZnO) target on the surface of super ordered carbon nanotube film to form a ZnO / carbon nanotube core-shell structure nanowire film; the power of magnetron sputtering was 100 W, the gas pressure was 5 Pa, the temperature was room temperature, and the sputtering time was 30 minutes; S3. Annealing treatment: placing the ZnO / carbon nanotube core-shell structure nanowire film into an annealing furnace for high temperature annealing in an air atmosphere at a temperature of 650°C for 2 hours; S4. After annealing is completed, the stainless steel frame is removed by wet stripping to obtain a horizontally ordered ZnO nanowire array; S5. Select a silicon-based substrate, use acetone, isopropanol and deionized water to ultrasonically clean the silicon-based substrate in sequence, and dry it after cleaning; transfer the horizontal ordered ZnO nanowire array prepared above to the silicon-based substrate, and use adhesion to ensure that the ZnO nanowire array is stably attached to the surface of the silicon-based substrate (preparation process as shown in FIG. Figure 1 as shown).
[0036] Device application examples: The prepared horizontal ordered ZnO nanowire array was integrated into the UV photodetector, and the high sensitivity of ZnO nanowires was used to detect UV light signals. The device is particularly suitable for detecting UV polarized light, and the experimental results show that the detection efficiency of UV polarized light is more than 50% higher than that of the traditional disordered ZnO nanowire network.
[0037] Example 2 This embodiment provides a method for preparing a horizontally ordered ZnO nanowire array, which specifically includes the following steps: S1. Preparation of super-aligned carbon nanotube film: Select a stainless steel frame as a supporting substrate (carbon nanotube template), wash and dry it; use a stretching tool to pull a continuous film from the super-aligned carbon nanotube array to form a suspended self-supporting super-aligned carbon nanotube film on the stainless steel frame; S2. Magnetron sputtering deposition of ZnO: magnetron sputtering was used to uniformly deposit zinc oxide (ZnO) target on the surface of super-ordered carbon nanotube film to form a ZnO / carbon nanotube core-shell structure nanowire film; the power of magnetron sputtering was 80W, the gas pressure was 4Pa, and the sputtering time was 20 minutes; S3. Annealing treatment: placing the ZnO / carbon nanotube core-shell structure nanowire film into an annealing furnace for high temperature annealing in an air atmosphere at a temperature of 600°C for 1.5 h; S4. After annealing is completed, the stainless steel frame is removed by dry stripping to obtain a horizontally ordered ZnO nanowire array; S5. The horizontal ordered ZnO nanowire array prepared above is transferred to a flexible polyimide (PI) substrate and attached to the surface of the flexible substrate by electrostatic adsorption.
[0038] Device application examples: The prepared horizontally ordered ZnO nanowire array is integrated into a flexible ultraviolet photodetector device, which is bendable and stretchable, and can maintain stable ultraviolet light response performance in a bent state. The flexible ultraviolet photodetector can effectively detect ultraviolet polarized light and has broad application prospects in the field of flexible electronic devices.
[0039] Example 3 This embodiment provides a method for preparing a horizontally ordered ZnO nanowire array, which specifically includes the following steps: S1. Preparation of super-aligned carbon nanotube film: Select a stainless steel frame as a supporting substrate (carbon nanotube template), wash and dry it; use a stretching tool to pull a continuous film from the super-aligned carbon nanotube array to form a suspended self-supporting super-aligned carbon nanotube film on the stainless steel frame; S2. Magnetron sputtering deposition of ZnO: magnetron sputtering was used to uniformly deposit zinc oxide (ZnO) target on the surface of super ordered carbon nanotube film to form a ZnO / carbon nanotube core-shell structure nanowire film; the power of magnetron sputtering was 120W, the pressure was 3Pa, the temperature was 300℃, and the sputtering time was 25 minutes; S3. Annealing treatment: placing the ZnO / carbon nanotube core-shell structure nanowire film into an annealing furnace for high temperature annealing in an air atmosphere at a temperature of 650°C for 2 hours; S4. After annealing is completed, the stainless steel frame is removed by wet stripping to obtain a horizontally ordered ZnO nanowire array; S5. Transfer the horizontally ordered ZnO nanowire array prepared above to a glass substrate, and ensure that its transparency and the integrity of the nanowire array are not damaged.
[0040] Device application examples: The prepared horizontally ordered ZnO nanowire arrays were integrated into transparent photodetector devices for transparent UV detectors. The device exhibited efficient UV light response while maintaining good transparency, especially high sensitivity detection of UV polarized light. Transparent UV photodetectors are suitable for new application scenarios such as smart windows and transparent displays.
[0041] Example 4 This embodiment provides a method for preparing a horizontally ordered ZnO nanowire array, which specifically includes the following steps: S1. Preparation of super-aligned carbon nanotube film: Select a vertical grid-striped stainless steel frame as a supporting substrate (carbon nanotube template), wash and dry it; use a stretching tool to pull a continuous film from the super-aligned carbon nanotube array to form a suspended self-supporting super-aligned carbon nanotube film on the stainless steel frame; S2. Magnetron sputtering deposition of ZnO: magnetron sputtering was used to uniformly deposit zinc oxide (ZnO) target on the surface of super ordered carbon nanotube film to form a ZnO / carbon nanotube core-shell structure nanowire film; the power of magnetron sputtering was 120W, the pressure was 3Pa, the temperature was 300℃, and the sputtering time was 40 minutes; S3. Annealing treatment: placing the ZnO / carbon nanotube core-shell structure nanowire film into an annealing furnace for high temperature annealing in an air atmosphere at a temperature of 700°C for 2 hours; S4. After annealing is completed, the stainless steel frame is removed by wet stripping to obtain a horizontally ordered ZnO nanowire array; S5. Transfer the horizontally ordered ZnO nanowire array prepared above to a glass substrate, and ensure that its transparency and the integrity of the nanowire array are not damaged.
[0042] Device application examples: The prepared horizontally ordered ZnO nanowire arrays were integrated into transparent photodetector devices for transparent UV light detectors. The device exhibited efficient UV light response while maintaining good transparency, especially high sensitivity detection of UV polarized light.
[0043] Example 5 This embodiment provides a method for preparing a horizontally ordered ZnO nanowire array, which specifically includes the following steps: S1. Preparation of super-aligned carbon nanotube film: Select a vertical grid-striped stainless steel frame as a supporting substrate (carbon nanotube template), wash and dry it; use a stretching tool to pull a continuous film from the super-aligned carbon nanotube array to form a suspended self-supporting super-aligned carbon nanotube film on the stainless steel frame; S2. Magnetron sputtering deposition of ZnO: magnetron sputtering was used to uniformly deposit zinc oxide (ZnO) target on the surface of super ordered carbon nanotube film to form a ZnO / carbon nanotube core-shell structure nanowire film; the power of magnetron sputtering was 120W, the gas pressure was 5Pa, the temperature was room temperature, and the sputtering time was 40 minutes; S3. Annealing treatment: placing the ZnO / carbon nanotube core-shell structure nanowire film into an annealing furnace for high temperature annealing in an air atmosphere at a temperature of 800°C for 2.5 h; S4. After annealing is completed, the stainless steel frame is removed by wet stripping to obtain a horizontally ordered ZnO nanowire array; S5. Transfer the horizontally ordered ZnO nanowire array prepared above to a glass substrate, and ensure that its transparency and the integrity of the nanowire array are not damaged.
[0044] Device application examples: The prepared horizontally ordered ZnO nanowire arrays were integrated into transparent photodetector devices for transparent UV light detectors. The device exhibited efficient UV light response while maintaining good transparency, especially high sensitivity detection of UV polarized light.
[0045] Example 6 The experiment on the effect of annealing temperature on the performance of ZnO nanowire array is as follows: Parallel experiments were set up to prepare horizontally ordered ZnO nanowire arrays with different annealing temperatures (550°C, 600°C, 650°C) as variables: S1. Preparation of super-aligned carbon nanotube film: Select a stainless steel frame as a supporting substrate (carbon nanotube template), wash and dry it; use a stretching tool to pull a continuous film from the super-aligned carbon nanotube array to form a suspended self-supporting super-aligned carbon nanotube film on the stainless steel frame; S2. Magnetron sputtering deposition of ZnO: magnetron sputtering was used to uniformly deposit zinc oxide (ZnO) target on the surface of super ordered carbon nanotube film to form a ZnO / carbon nanotube core-shell structure nanowire film; the power of magnetron sputtering was 100W, the gas pressure was 6Pa, and the sputtering time was 30 minutes; S3. Annealing treatment: placing the ZnO / carbon nanotube core-shell structure nanowire film into an annealing furnace for high temperature annealing in an air atmosphere, the annealing temperatures are set to 550°C, 600°C, and 650°C, respectively, and the annealing time is 2h; S4. After annealing, the stainless steel frame is removed by wet stripping to obtain a horizontally ordered ZnO nanowire array.
[0046] Performance test and results: The photoelectric performance of ZnO nanowire arrays treated with different annealing temperatures was tested. The test results show that at an annealing temperature of 650°C, the ultraviolet light response performance of the ZnO nanowire array is the best and has the highest stability.
[0047] The ZnO nanowire array prepared at the optimal annealing temperature was integrated into an ultraviolet photodetector. The device exhibited excellent ultraviolet light detection sensitivity and response speed, and was particularly suitable for high-performance ultraviolet photodetectors.
[0048] Example 7 The experiment on the effect of magnetron sputtering time on the performance of ZnO nanowire array is as follows: Parallel experiments were set up to prepare horizontally ordered ZnO nanowire arrays with different magnetron sputtering times (10 min, 20 min, 30 min, 40 min and 60 min) as variables: S1. Preparation of super-aligned carbon nanotube film: Select a stainless steel frame as a supporting substrate (carbon nanotube template), wash and dry it; use a stretching tool to pull a continuous film from the super-aligned carbon nanotube array to form a suspended self-supporting super-aligned carbon nanotube film on the stainless steel frame; S2. Magnetron sputtering deposition of ZnO: magnetron sputtering was used to uniformly deposit zinc oxide (ZnO) target on the surface of super-ordered carbon nanotube film to form a ZnO / carbon nanotube core-shell structure nanowire film; the power of magnetron sputtering was 100W, the gas pressure was 6Pa, and the sputtering time was continuous for 10min, 20min, 30min, 40min and 60min respectively; S3. Annealing treatment: placing the ZnO / carbon nanotube core-shell structure nanowire film into an annealing furnace for high temperature annealing in an air atmosphere, the annealing temperature is set to 650°C, and the annealing time is 2h; S4. After annealing, the stainless steel frame is removed by wet stripping to obtain a horizontally ordered ZnO nanowire array.
[0049] The results are as follows Figure 2 As shown, Figure 2 (a)-(e) are photos of ZnO nanowire arrays obtained at different magnetron sputtering times (after annealing to remove the carbon nanotube template); it can be seen that as the sputtering time increases, the transparency of the prepared ZnO nanowire array film gradually decreases, indicating that its thickness gradually increases.
[0050] Performance test and results: The photoelectric performance of ZnO nanowire arrays (ZnO-C) treated with different magnetron sputtering times (10min~60min) was tested. Test method: Measure the responsivity under different wavelengths of light (responsivity R = photocurrent I ph / Incident light intensity P in );Test results Figure 3 As shown in the figure, it can be seen that the response value is the highest and the device performance is the best when the magnetron sputtering time is 20 minutes.
[0051] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the disclosure of the present invention can be performed in parallel, sequentially or in different orders, as long as the desired results of the technical solution disclosed in the present invention can be achieved, and this document does not limit this.
[0052] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims
1. A method for preparing a horizontally ordered ZnO nanowire array, characterized in that: The specific steps include: S1. Preparation of super-aligned carbon nanotube film: select a metal frame as a supporting substrate, wash and dry it; pull a continuous film from the super-aligned carbon nanotube array to form a suspended self-supporting super-aligned carbon nanotube film on the metal frame; S2. Magnetron sputtering deposition of ZnO: magnetron sputtering is used to uniformly deposit ZnO target on the surface of super-ordered carbon nanotube film to form a ZnO / carbon nanotube core-shell structure nanowire film; S3. Annealing treatment: placing the ZnO / carbon nanotube core-shell structure nanowire film in an air atmosphere for high temperature annealing, the annealing temperature is 550~800℃, and the annealing time is 1.5~2.5h; S4. After annealing is completed, the metal frame is removed to obtain a horizontally ordered ZnO nanowire array.
2. The method for preparing a horizontally ordered ZnO nanowire array according to claim 1, characterized in that: In step S2, the power of magnetron sputtering is 50-150 W, the gas pressure is 3-10 Pa, the temperature is 15-300° C., and the sputtering time is 10-60 minutes; The annealing temperature in step S3 is 650±10°C.
3. The method for preparing a horizontally ordered ZnO nanowire array according to claim 1, characterized in that: The magnetron sputtering time in step S2 is 40 to 60 minutes; The annealing temperature in step S3 is 700±10°C.
4. The method for preparing a horizontally ordered ZnO nanowire array according to claim 1, characterized in that: The magnetron sputtering time in step S2 is 20 minutes; The metal frame is removed in step S4 by wet stripping or dry stripping.
5. The method for preparing a horizontally ordered ZnO nanowire array according to claim 1, characterized in that: The method further comprises step S5: transferring the horizontal ordered ZnO nanowire array to the substrate; and utilizing adhesion or electrostatic adsorption to ensure that the ZnO nanowire array is stably attached to the surface of the substrate.
6. The method for preparing a horizontally ordered ZnO nanowire array according to claim 5, characterized in that: The substrate is a silicon-based substrate, a flexible substrate or a transparent substrate.
7. The method for preparing a horizontally ordered ZnO nanowire array according to claim 6, characterized in that: The flexible substrate is a flexible polyimide substrate; the transparent substrate is a glass substrate; and the metal frame is made of aluminum or stainless steel.
8. A horizontally ordered ZnO nanowire array, characterized in that: The horizontally ordered ZnO nanowire array is prepared by the preparation method of any one of claims 1 to 7.
9. Use of the horizontally ordered ZnO nanowire array according to claim 8 in preparing photoelectric detection devices.
10. The use according to claim 9, characterized in that: The photoelectric detection device is an ultraviolet photoelectric detection device, a flexible ultraviolet photoelectric detection device or a transparent photoelectric detection device.