Gallium antimonide crystal growth apparatus and growth method

Abstract

A gallium antimonide crystal growth apparatus and method are provided. The gallium antimonide crystal growth apparatus includes a liquid sealant replenishment mechanism, which replenishes a corresponding amount of NaCl+KCl liquid sealant melt as the gallium antimonide crystal is grown using the liquid-sealed Czochralski method. The gallium antimonide crystal growth method includes the following steps: loading gallium antimonide polycrystalline material, dopant, and liquid sealant into a crystal growth crucible; loading the NaCl+KCl solid liquid sealant particles into a feed crucible; evacuating, degassing, and leak checking; purging the furnace with nitrogen; heating; after the temperature stabilizes, crystal growth begins; as the crystal grows, the flow switch is adjusted to continuously replenish the liquid sealant in the feed crucible into the crystal growth crucible; after crystal growth is completed, the crystal growth crucible begins a cooling process until cooling is complete, at which point the feed crucible stops replenishing the crystal growth crucible with liquid sealant; evacuating and injecting air, then opening the furnace and cutting off the crystal rod.

Description

Technical Field

[0001] This disclosure relates to the field of crystal growth, and more specifically to a gallium antimonide crystal growth apparatus and growth method. Background Technology

[0002] Gallium antimonide (GaSb) is a group III-V compound semiconductor material. Its bandgap is well-matched with other group III-V alloys and ternary and quaternary antimony-containing compounds, making GaSb an excellent substrate material for electronic and optoelectronic devices. It can be used in superlattice infrared detectors, solar cells, and light-emitting diodes.

[0003] Currently, GaSb growth is mostly achieved using the LEC (Liquid-Encapsulated Czochralski) method. This process requires the use of a liquid encapsulant during crystal growth to reduce the volatilization of Sb in the melt, thereby obtaining high-quality GaSb single crystals. Currently, the commonly used liquid encapsulant is a mixture of NaCl and KCl. This mixture has advantages such as low melting point, low viscosity, low cost, and non-reaction with GaSb. However, this mixture has a relatively high saturated vapor pressure near the melting point of GaSb, leading to significant volatilization. As GaSb grows, the liquid encapsulant becomes increasingly thin, resulting in more severe Sb volatilization. Furthermore, in the initial stage of crystal growth, it is desirable for the liquid encapsulant thickness to be minimal. Excessive thickness can hinder observation during the crystal seeding stage, easily resulting in defective crystal material. Additionally, excessive thickness can lead to a smaller temperature gradient, making polycrystalline formation more likely during the seeding stage. However, as crystal growth progresses, the crystal diameter and height increase, increasing the heat scattered by the crystal and further increasing the temperature gradient at the solid-liquid interface, making dislocations more prone to growth.

[0004] Therefore, it is necessary to design a crystal growth apparatus and method. Summary of the Invention

[0005] In view of the problems existing in the background art, one object of this disclosure is to provide a gallium antimonide crystal growth apparatus and growth method, which can achieve the thickness of the liquid sealant not only to reduce the volatilization of Sb element, but also to reduce the temperature gradient during crystal growth and cooling, and reduce crystal dislocations during the entire liquid-sealed Czochralski method for growing gallium antimonide crystal.

[0006] Therefore, a gallium antimonide crystal growth apparatus is provided, which includes a liquid sealant replenishment mechanism. The liquid sealant replenishment mechanism is used to replenish a corresponding amount of NaCl+KCl liquid sealant melt as the crystal grows using the liquid seal Czochralski method.

[0007] A method for growing gallium antimonide crystals includes the following steps:

[0008] S1, Gallium antimonide polycrystalline material, dopant, and liquid sealant are loaded into the crystal growth crucible inside the furnace of the gallium antimonide crystal growth device. The liquid sealant is a mixture of NaCl and KCl solid particles.

[0009] S2, Load the liquid sealing agent NaCl+KCl solid particles into the feed crucible;

[0010] S3, vacuuming, purging air, and leak detection;

[0011] S4, purge nitrogen into the furnace to bring the pressure inside the furnace to 0.1 MPa, then stop purging the furnace.

[0012] S5, heat up to bring the temperature of the crystal growth crucible to the melting temperature of gallium antimonide polycrystalline material, and bring the temperature of the feeding crucible to the melting temperature.

[0013] S6. After the temperature stabilizes, the seed crystal rod drives the seed crystal to extend under the liquid sealant on the surface of the crystal growth crucible, and the liquid-sealed Czochralski method is started to grow crystals.

[0014] S7. As crystal growth progresses, the flow switch is adjusted to continuously replenish the liquid sealant in the feeding crucible into the crystal growth crucible. The flow rate L of the liquid sealant, the crystal pulling speed V, the crystal diameter d during the pulling process, and the inner diameter D of the crystal growth crucible have the following relationship:

[0015]

[0016] S8. After crystal growth is completed, the crystal growth crucible begins the cooling process until the cooling is completed. The feeding crucible then stops replenishing the liquid sealant to the crystal growth crucible.

[0017] S9, evacuate the furnace and inject air, then open the furnace and cut the crystal rod off the lifting rod.

[0018] The beneficial effects of this disclosure are as follows: In the gallium antimonide crystal growth apparatus and growth method according to this disclosure, during the entire liquid-sealed Czochralski method for growing gallium antimonide crystals, the thickness of the liquid sealant can not only reduce the volatilization of Sb element, but also reduce the temperature gradient during crystal growth and cooling, and reduce crystal dislocations. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of the structure of the gallium antimonide crystal growth apparatus according to this disclosure.

[0020] Figure 2 This is an EPD distribution map of dislocations after EPD scanning of a gallium antimonide crystal slice from Example 1.

[0021] Figure 3 This is the EPD distribution diagram of the gallium antimonide crystal slice after dislocation EPD scanning, which is shown in Comparative Example 1.

[0022] The reference numerals in the attached figures are explained below.

[0023] 100 gallium antimonide crystal growth device 163 base

[0024] 11 Liquid sealant replenishment mechanism 164 screw

[0025] 111 Feeding Crucible 17 Second Heater

[0026] 112 First Heater T1 Graphite Heater

[0027] 113 Pipeline T2 Graphite Double-Layer Insulation Cover

[0028] 114 Flow Switch T21 Inner Layer

[0029] 12 controller T22 outer layer

[0030] 13 Crystal growth crucible T3 carbon felt

[0031] 14 seed crystals, 18 vacuum interface

[0032] 15 Lifting Rod 19 Gas Inlet

[0033] 16 furnace body 20 first bracket

[0034] 161 Top Cover 21 Second Bracket

[0035] 162 medium tube Detailed Implementation

[0036] The accompanying drawings illustrate embodiments of this disclosure, and it will be understood that the disclosed embodiments are merely examples of this disclosure, which can be implemented in various forms. Therefore, the specific details disclosed herein should not be construed as limiting, but are intended only as the basis for the claims and as an illustrative basis to teach those skilled in the art how to implement this disclosure in various ways.

[0037] Gallium antimonide crystal growth apparatus

[0038] Reference Figure 1 According to the present disclosure, the gallium antimonide crystal growth apparatus 100 includes a liquid sealant replenishment mechanism 11, which is used to replenish a corresponding amount of NaCl+KCl liquid sealant melt as the crystal grows using the liquid seal Czochralski method.

[0039] In the gallium antimonide crystal growth apparatus 100 according to the present disclosure, by setting the liquid sealant replenishment mechanism 11, a corresponding amount of NaCl+KCl liquid sealant melt can be replenished as the crystal grows during the liquid-sealed Czochralski method. In this way, during the entire liquid-sealed Czochralski method growth of gallium antimonide crystal, the thickness of the liquid sealant can not only meet the requirements of reducing the volatilization of Sb element, but also reduce the temperature gradient during crystal growth and cooling, and reduce crystal dislocations.

[0040] like Figure 1 As shown, in one example, the gallium antimonide crystal growth apparatus 100 also includes a controller 12 and a crystal growth crucible 13. The crystal growth crucible 13 is used to hold gallium antimonide polycrystalline material and an initial liquid sealant of NaCl+KCl. The liquid sealant replenishment mechanism 11 includes a feeding crucible 111, a first heater 112, a pipe 113, and a flow switch 114. A feeding crucible 111 is used to load NaCl+KCl supplementary liquid sealant; a first heater 112 is used to heat the feeding crucible 111 to form the supplementary liquid sealant melt and to cool the feeding crucible 111; one end of a pipe 113 is connected to the feeding crucible 111, and the other end is located above the crystal growth crucible 13 so that the pipe 113 is used to replenish the molten supplementary liquid sealant melt in the feeding crucible 111 into the crystal growth crucible 13 during the growth of gallium antimonide crystals using the liquid-sealed Czochralski method; a flow switch 114 is disposed on the pipe 113 and communicatively connected to the controller 12 to control the flow rate of the supplementary liquid sealant transported through the pipe 113. Through the first heater 112, the flow switch 114, and the controller 12, the corresponding amount of NaCl+KCl liquid sealant melt is replenished to the crystal growth crucible 13.

[0041] Furthermore, for example, the crystal growth crucible 13 is initially filled with a dopant. More specifically, the dopant is gallium telluride. In one example, the dopant has a mass fraction of 10-100 ppm relative to the gallium antimonide polycrystalline material in the crystal growth crucible 13.

[0042] The flow switch 114 can be, but is not limited to, a pipeline flow meter.

[0043] In addition, the gallium antimonide crystal growth apparatus 100 also includes a tachometer (not shown) and an infrared measuring instrument (not shown). The tachometer is used to measure the crystal pulling speed and is communicatively connected to the controller 12. The infrared measuring instrument is used to monitor the crystal diameter and the inner diameter of the crystal growth crucible 13 during the pulling process and is communicatively connected to the controller 12.

[0044] like Figure 1As shown, the gallium antimonide crystal growth apparatus 100 also includes a seed crystal 14 and a lifting rod 15. The seed crystal 14 is fixed to the end of the lifting rod 15. For example, the seed crystal 14 is a gallium antimonide single crystal with a purity of 6N. The lifting rod 15 is capable of reciprocating in the vertical direction, and is used to drive the seed crystal 14 downward into the crystal growth crucible 13 for growing gallium antimonide crystals using the liquid-sealed Czochralski method. The lifting rod 15 is connected to a corresponding rotating mechanism (not shown) and a corresponding lifting mechanism (not shown) so that it can move linearly upward while rotating. Accordingly, the flow rate L of the liquid sealant replenishing mechanism 11, the crystal pulling speed V, the crystal diameter d during the pulling process, and the inner diameter D of the crystal growth crucible 13 have the following relationship:

[0045]

[0046] like Figure 1 As shown, the gallium antimonide crystal growth apparatus 100 also includes a furnace body 16. A feeding crucible 111 is located inside the furnace body 16, a first heater 112 is located inside the furnace body 16, and a lifting rod 15 is disposed on the furnace body 16.

[0047] Reference Figure 1 The gallium antimonide crystal growth apparatus 100 also includes a second heater 17, a vacuum port 18, and a gas inlet 19. The crystal growth crucible 13, the feeding crucible 111, the first heater 112, and the flow switch 114 are located inside the furnace body 16. The second heater 17, located inside the furnace body 16, is used to heat and cool the crystal growth crucible 13. The vacuum port 18 and the gas inlet 19 are located on the furnace body 16. The vacuum port 18 is used to evacuate the furnace body 16, and the gas inlet 19 is used to introduce the required gas (e.g., expelling gas, gas used during crystal growth) into the furnace body 16.

[0048] Specifically, for example, such as Figure 1 As shown, both the first heater 112 and the second heater 17 include: a graphite heater T1, a graphite double-layer insulation cover T2, and a carbon felt T3; the graphite heater T1 is arranged around one of the crystal growth crucible 13 and the feeding crucible 111, and the graphite double-layer insulation cover T2 is arranged around the graphite heater T1. Further, as... Figure 1 As shown, the graphite double-layer insulation cover T2 includes an inner layer T21 and an outer layer T22; carbon felt T3 is filled between the inner layer T21 and the outer layer T22 of the graphite double-layer insulation cover T2.

[0049] like Figure 1As shown, in one example, the gallium antimonide crystal growth apparatus 100 further includes a first support 20 and a second support 21; the first support 20 fixes the first heater 112; the second support 21 fixes the second heater 17. The first support 20 can be fixed stationary. Further, the second support 21 is connected to an external rotating mechanism (not shown) and an external lifting mechanism (not shown) to simultaneously rotate and rise during crystal growth, so that the liquid surface in the crystal growth crucible 13 is within the range heated by the second heater 17, and the rotation of the crystal growth crucible 13 is opposite to the rotation of the lifting rod 15. For example, during gallium antimonide crystal growth, the crystal growth crucible 13 and the lifting rod 15 maintain opposite rotational speeds, with the crystal growth crucible 13 rotating at 1 rpm and the lifting rod 15 rotating at 3 rpm. (Refer to...) Figure 1 In one example, the furnace body 16 includes a top cover 161, a middle cylinder 162 and a base 163 arranged sequentially from top to bottom. The top cover 161 and the middle cylinder 162 are detachably assembled by screws 164, and the middle cylinder 162 and the base 163 are detachably assembled by screws 164.

[0050] Gallium antimonide crystal growth methods

[0051] Reference Figure 1 The gallium antimonide crystal growth method according to this disclosure includes the following steps:

[0052] S1, Gallium antimonide polycrystalline material, dopant and liquid sealant are loaded into the crystal growth crucible 13 inside the furnace body 16 of the gallium antimonide crystal growth device 100. The liquid sealant is a mixture of NaCl and KCl solid particles.

[0053] S2, Load the liquid sealing agent NaCl+KCl solid particles into the feed crucible 111;

[0054] S3, vacuuming, purging air, and leak detection;

[0055] S4, Nitrogen gas is introduced into the furnace body 16 to make the pressure inside the furnace body 16 reach 0.1MPa, and then the gas supply to the furnace body 16 is stopped;

[0056] S5, heat up to make the temperature of the crystal growth crucible 13 reach the melting temperature of gallium antimonide polycrystalline material, and make the temperature of the feeding crucible 111 reach the melting temperature.

[0057] S6. After the temperature stabilizes, the seed crystal rod 15 drives the seed crystal 14 to extend into the liquid sealant on the surface of the crystal growth crucible 13, and the liquid seal Czochralski method is started to grow crystals.

[0058] S7. As crystal growth proceeds, the flow switch 114 is adjusted to continuously replenish the liquid sealant in the feeding crucible 111 into the crystal growth crucible 13.

[0059] The flow rate L of the liquid sealant, the crystal pulling speed V, the crystal diameter d during the pulling process, and the inner diameter D of the crystal growth crucible 13 are related as follows:

[0060]

[0061] S8. After crystal growth is completed, the crystal growth crucible 13 begins the cooling process. Until the cooling is completed, the feeding crucible 111 stops replenishing the liquid sealant to the crystal growth crucible 13.

[0062] S9, evacuate and inject air into furnace body 16, then open furnace body 16 and cut the crystal rod off the lifting rod 15.

[0063] In the gallium antimonide crystal growth method according to this disclosure, the liquid sealant is set in the crystal growth crucible 13 in step S1, the liquid sealant is replenished in the feeding crucible 111 in step S2, a stable NaCl+KCl liquid sealant melt is formed in the feeding crucible 111 by heating in step S5, and the liquid sealant is continuously replenished from the feeding crucible 111 to the crystal growth crucible 13 in step S7. In this way, the thickness of the liquid sealant (i.e. the thickness of the liquid sealant in the crystal growth crucible 13) can be achieved in the entire liquid-sealed Czochralski method to not only reduce the volatilization of Sb element, but also reduce the temperature gradient during crystal growth and cooling, and reduce crystal dislocations.

[0064] Furthermore, the gallium antimonide crystal growth method disclosed herein can employ the aforementioned gallium antimonide crystal growth apparatus 100. The specific structure, effects, and operation of the gallium antimonide crystal growth apparatus 100 are described above and will not be repeated here.

[0065] In one example, in step S1, the initial thickness of the liquid sealant in the crystal growth crucible 13 is 10 mm. For example, in step S1, the liquid sealant is finally laid on top of the gallium antimonide polycrystalline material and the dopant in the crystal growth crucible 13, thus minimizing the time for the liquid sealant to absorb moisture. In step S1, for example, the dopant is gallium telluride, and the mass fraction of the dopant relative to the gallium antimonide polycrystalline material is 10-100 ppm.

[0066] For example, in steps S1 and S2, the molar ratio of NaCl to KCl is 1:1.

[0067] In one example, step S3 involves alternating between vacuuming the furnace body 16 and filling it with nitrogen 2-3 times using a vacuum pump. The vacuum pressure reached is 10 Pa, and nitrogen is used for purging the gas.

[0068] In one example, in step S5, the temperature of the crystal growth crucible 13 reaches 712°C, and the temperature of the feeding crucible 111 is the same as that of the crystal growth crucible 13. Since the temperature of the feeding crucible 111 is the same as that of the crystal growth crucible 13, when the feeding crucible 111 replenishes the liquid sealant to the crystal growth crucible 13, the temperature of the replenished liquid sealant will not affect the temperature fluctuation of the crystal growth crucible 13.

[0069] In one example, in step S6, the temperature is stabilized for 10 hours.

[0070] In step S7, for example, the flow switch 114 is a pipeline flow meter and is communicatively connected to the controller 12. For example, in step S7, the crystal pulling speed V is determined by a tachometer (not shown) measuring the pulling speed of the lifting rod 15, and the crystal diameter d and the inner diameter D of the crystal growth crucible 13 are monitored by an infrared measuring instrument (not shown) during the pulling process. In one example, during gallium antimonide crystal growth, the crystal growth crucible 13 and the lifting rod 15 maintain opposite rotational speeds; the crystal growth crucible 13 rotates at 1 rpm, the lifting rod 15 rotates at 3 rpm, and the seed crystal 14 is a gallium antimonide single crystal with a purity of 6N.

[0071] [test]

[0072] Example 1

[0073] Example 1 uses the aforementioned and Figure 1 The entire structure of the gallium antimonide crystal growth apparatus 100 includes a lifting rod 15 connected to a corresponding rotating mechanism (not shown) and a corresponding lifting mechanism (not shown), a first bracket 20 fixed in place, and a second bracket 21 connected to an external rotating mechanism (not shown) and an external lifting mechanism (not shown).

[0074] The gallium antimonide crystal growth method in Example 1 adopts the following steps:

[0075] S1, Gallium antimonide polycrystalline material, dopant, and liquid sealant are loaded into the crystal growth crucible 13 inside the furnace body 16 of the gallium antimonide crystal growth apparatus 100. The dopant is gallium telluride, and the mass fraction of the dopant relative to the gallium antimonide polycrystalline material is 50 ppm. The liquid sealant is a mixture of NaCl and KCl solid particles, with a molar ratio of NaCl to KCl of 1:1. The liquid sealant is finally spread on the gallium antimonide polycrystalline material and the dopant. The initial thickness of the liquid sealant in the crystal growth crucible 13 is 10 mm.

[0076] S2, the liquid sealant NaCl+KCl solid particles are loaded into the feed crucible 111, with the molar ratio of NaCl to KCl being 1:1;

[0077] S3, vacuuming, purging gas and leak detection: vacuuming the furnace body 16 through the vacuuming port 18 and filling the furnace body 16 with nitrogen through the gas inlet 19, alternating 2-3 times, the vacuuming pressure is 10Pa, and nitrogen is used for purging gas.

[0078] S4, Nitrogen gas is introduced into the furnace body 16 through the gas inlet 19 to make the pressure inside the furnace body 16 reach 0.1MPa (monitored by a pressure gauge (not shown),) and then the gas supply to the furnace body 16 is stopped;

[0079] S5, the second heater 17 and the first heater 112 are heated to bring the temperature of the crystal growth crucible 13 to the melting temperature of gallium antimonide polycrystalline material, 712°C, and the temperature of the feeding crucible 111 to the melting temperature. The temperature of the feeding crucible 111 is the same as that of the crystal growth crucible 13 (i.e., both are 712°C). The first heater 112 and the second heater 17 each include: a graphite heater T1, a graphite double-layer insulation cover T2, and a carbon felt T3. The graphite heater T1 is arranged around one of the crystal growth crucible 13 and the feeding crucible 111. The graphite double-layer insulation cover T2 is arranged around the graphite heater T1. The graphite double-layer insulation cover T2 includes an inner layer T21 and an outer layer T22. The carbon felt T3 is filled between the inner layer T21 and the outer layer T22 of the graphite double-layer insulation cover T2.

[0080] S6. After the temperature stabilizes for 10 hours, the seed crystal rod 15 drives the seed crystal 14 to extend under the liquid sealant on the surface of the crystal growth crucible 13, and the liquid-sealed Czochralski method is started to grow crystals. The seed crystal 14 is a gallium antimonide single crystal with a purity of 6N.

[0081] S7. As crystal growth proceeds, the flow switch 114 is adjusted so that the liquid sealant in the feeding crucible 111 is continuously replenished into the crystal growth crucible 13 through the pipe 113. The flow switch 114 is a pipe flow meter and is connected to the controller 12. The flow switch 114 controls the flow rate of the sealant.

[0082] The flow rate L of the liquid sealant, the crystal pulling speed V, the crystal diameter d during the pulling process, and the inner diameter D of the crystal growth crucible 13 are related as follows:

[0083]

[0084] The crystal pulling speed V is determined by measuring the speed of the pulling rod 15 by a speed measuring instrument. The crystal diameter d and the inner diameter D of the crystal growth crucible 13 are monitored by an infrared measuring instrument during the pulling process.

[0085] During the growth of gallium antimonide crystals, the crystal growth crucible 13 and the lifting rod 15 maintain opposite rotation speeds, with the crystal growth crucible 13 rotating at 1 rpm and the lifting rod 15 rotating at 3 rpm.

[0086] S8. After crystal growth is completed, the crystal growth crucible 13 begins the cooling process. Until the cooling is completed, the feeding crucible 111 stops replenishing the liquid sealant to the crystal growth crucible 13.

[0087] S9, the furnace body 16 is evacuated through the vacuum port 18 and air is injected through the air inlet 19. Then the furnace body 16 is opened and the crystal rod is cut off from the lifting rod 15.

[0088] Comparative Example 1

[0089] Except that the gallium antimonide crystal growth apparatus 100 used does not have a liquid sealant replenishment mechanism 11 and a first support 20, and the gallium antimonide crystal growth method does not have steps S2 and S5 where the crucible 111 is not heated, and steps S7 and S8 where the crucible 111 is not required, the rest is the same as in Example 1. That is to say, Comparative Example 1 does not use a liquid sealant replenishment method in either the apparatus or the method.

[0090] Figure 2 This is an EPD distribution diagram of the gallium antimonide crystal slice from Example 1 after dislocation EPD scanning. Figure 3 This is the EPD distribution diagram of the gallium antimonide crystal slice after dislocation EPD scanning, as shown in Comparative Example 1. The gallium antimonide crystal slice was fabricated from the obtained crystal rod.

[0091] from Figure 2 It can be seen that the average dislocation in the crystal is 1 / cm. 2 ;from Figure 3 It can be seen that the average dislocation in the crystal is 321 / cm. 2 .

[0092] Several exemplary embodiments have been described in detail above, but this document is not intended to limit itself to the explicitly disclosed combinations. Therefore, unless otherwise stated, the various features disclosed herein can be combined to form several other combinations, which are not shown for simplicity.

Claims

1. A gallium antimonide crystal growth device, characterized in that, the gallium antimonide crystal growth device (100) comprises a liquid encapsulant supplementing mechanism (11) for supplementing a corresponding amount of NaCl+KCl liquid encapsulant melt as the crystal grows when growing the gallium antimonide crystal by using liquid encapsulated Czochralski method; the gallium antimonide crystal growth device (100) further comprises a controller (12) and a crystal growth crucible (13); the crystal growth crucible (13) is used for loading gallium antimonide polycrystal and initial NaCl+KCl liquid encapsulant; the liquid encapsulant supplementing mechanism (11) comprises a feeder crucible (111), a first heater (112), a pipeline (113) and a flow switch (114), the feeder crucible (111) is used for loading NaCl+KCl supplementing liquid encapsulant; the first heater (112) is used for heating the feeder crucible (111) to form a supplementing liquid encapsulant melt and cooling the feeder crucible (111); one end of the pipeline (113) is communicated with the feeder crucible (111) and the other end is located above the crystal growth crucible (13) so that the pipeline (113) is used for supplementing the molten supplementing liquid encapsulant melt in the feeder crucible (111) into the crystal growth crucible (13) during the growth of the gallium antimonide crystal by using liquid encapsulated Czochralski method; the flow switch (114) is arranged on the pipeline (113) and is communicatively connected to the controller (12) to control the flow of the supplementing liquid encapsulant delivered through the pipeline (113); the gallium antimonide crystal growth device (100) further comprises a speed detector and an infrared measuring instrument, the speed detector is used for measuring the pulling speed of the crystal and is communicatively connected to the controller (12); the infrared measuring instrument is used for monitoring the diameter of the crystal and the inner diameter of the crystal growth crucible (13) during the pulling process and is communicatively connected to the controller (12). 2.The gallium antimonide crystal growth device according to claim 1, characterized in that, the crystal growth crucible (13) is initially loaded with a dopant. 3.The gallium antimonide crystal growth device according to claim 1, characterized in that, the flow switch (114) is a pipeline flowmeter.

4. A method of growing a gallium antimonide crystal, the method comprising: The gallium antimonide crystal growth method adopts the gallium antimonide crystal growth device according to any one of claims 1-3, and the gallium antimonide crystal growth method comprises the following steps: S1, loading gallium antimonide polycrystal, a dopant and liquid encapsulant into the crystal growth crucible (13) in the furnace body (16) of the gallium antimonide crystal growth device (100), the liquid encapsulant being NaCl+KCl mixed solid particles; S2, loading the liquid encapsulant NaCl+KCl solid particles into the feeder crucible (111); S3, vacuumizing, air purging and leak testing; S4, filling nitrogen into the furnace body (16) to make the pressure in the furnace body (16) reach 0.1 MPa, and stopping filling gas into the furnace body (16); S5, heating to make the temperature of the crystal growth crucible (13) reach the melting temperature of the gallium antimonide polycrystal and make the temperature of the feeder crucible (111) reach the melting temperature; S6, after the temperature is stabilized, the seed rod (15) drives the seed crystal (14) to extend into the liquid encapsulant below the surface of the crystal growth crucible (13), and the crystal growth is started by using liquid encapsulated Czochralski method. S7, as the crystal growth proceeds, the flow switch (114) is adjusted to continuously supplement the liquid sealant in the material-continuing crucible (111) into the crystal-growing crucible (13), The flow rate L of the liquid sealant, the pulling rate V of the crystal, the diameter d of the crystal during pulling, and the inner diameter D of the crystal-growing crucible (13) have the following relationship: ； S8, after the crystal growth is completed, the crystal-growing crucible (13) starts a cooling process until the cooling is completed, and the material-continuing crucible (111) stops supplementing the liquid sealant into the crystal-growing crucible (13); S9, the furnace body (16) is pumped and air is injected, and then the furnace body (16) is opened, and the crystal rod is cut from the pulling rod (15).

5. The gallium antimonide crystal growth method according to claim 4, wherein, In step S1, the initial thickness of the liquid sealant in the crystal-growing crucible (13) is 10 mm.

6. The gallium antimonide crystal growth method according to claim 4, wherein, In step S1, the liquid sealant is finally laid on the gallium antimonide polycrystal and the dopant in the crystal-growing crucible (13).

7. The gallium antimonide crystal growth method according to claim 4, wherein, In step S1, the dopant is gallium telluride, and the mass fraction of the dopant relative to the gallium antimonide polycrystal is 10-100 ppm; in steps S1 and S2, the molar ratio of NaCl to KCl is 1:

1.

8. The gallium antimonide crystal growth method according to claim 4, wherein, Step S3 is: The vacuum pumping and the gas flushing are alternately performed 2-3 times by the vacuum pump to the furnace body (16) and by the nitrogen gas into the furnace body (16), the vacuum pumping reaches a pressure of 10 Pa, and the gas flushing uses nitrogen.

9. The gallium antimonide crystal growth method according to claim 4, wherein, In step S5, the temperature of the crystal-growing crucible (13) reaches 712°C, and the temperature of the material-continuing crucible (111) is the same as that of the crystal-growing crucible (13); In step S6, the temperature is stabilized for 10 h.

10. The gallium antimonide crystal growth method according to claim 4, wherein, The flow switch (114) is a pipeline flow meter and is in communication connection with the controller (12).

11. The gallium antimonide crystal growth method according to claim 4, wherein, In step S7, the pulling rate V of the crystal is determined by measuring the pulling speed of the pulling rod (15) by a speed detector, and the diameter d of the crystal during pulling and the inner diameter D of the crystal-growing crucible (13) are monitored by an infrared measuring instrument.

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