Packaging structure and packaging method

Abstract

The invention discloses a packaging structure and a packaging method. The packaging structure comprises a substrate; the chip is positioned on the substrate and is electrically connected with the substrate; the heat conduction layer is located on the surface, back to the substrate, of the chip; the heat dissipation cover is located on the substrate and covers the chip and the blocking structure, the heat dissipation cover comprises a supporting part located on the substrate and a top cover connected with the top of the supporting part, and the top cover comprises a first top cover located on the top of the heat conduction layer, a second top cover located on the side portion of the heat conduction layer and a connecting part connecting the first top cover and the second top cover; the first top cover and the connecting part form a protruding part protruding in the direction away from the supporting part, and the protruding part at least covers the heat conduction layer. And the blocking structure is located on the substrate below the second top cover and is adjacent to the chip, one end of the blocking structure is fixed on the substrate, and the other end of the blocking structure is in contact with the second top cover. The reliability and the heat dissipation performance of the packaging structure are improved through the heat dissipation cover with the protruding part and the blocking structure.

Description

Technical Field

[0001] The embodiments of the present invention relate to the field of semiconductor packaging technology, and in particular to a packaging structure and a packaging method. Background Art

[0002] With the development of technology, the computing speed of chips in the package structure has been significantly improved, but this also causes the chips to generate more heat during operation. The increase in heat may reduce the working performance of the chip or even cause damage to the chip, thus affecting the performance of the package structure.

[0003] In order to solve the heat dissipation problem of the package structure, mounting a heat dissipation cover has become an effective solution. The heat dissipation cover mainly increases the heat dissipation area to improve the heat dissipation efficiency, thereby protecting the chip from overheating.

[0004] However, although mounting a heat dissipation cover alleviates the heat dissipation problem to a certain extent, the reliability of the packaging structure still faces challenges. Summary of the invention

[0005] The problem solved by the embodiments of the present invention is to provide a packaging structure and a packaging method to improve the reliability and heat dissipation of the packaging structure.

[0006] To solve the above problems, an embodiment of the present invention provides a packaging structure, comprising: a substrate; a chip, located on the substrate and electrically connected to the substrate; a heat-conducting layer, located on the surface of the chip facing away from the substrate; a heat-dissipating cover, located on the substrate and covering the chip and a blocking structure, the heat-dissipating cover comprising a supporting portion located on the substrate, and a top cover connected to the top of the supporting portion, the top cover comprising a first top cover located on the top of the heat-conducting layer, a second top cover located on the side of the heat-conducting layer, and a connecting portion connecting the first top cover and the second top cover, the first top cover and the connecting portion constitute a protruding portion protruding in a direction away from the supporting portion, the protruding portion at least covers the heat-conducting layer; a blocking structure, located on the substrate below the second top cover and adjacent to the chip, one end of the blocking structure being fixed to the substrate, and the other end being in contact with the second top cover.

[0007] Correspondingly, an embodiment of the present invention also provides a packaging method, comprising: providing a substrate, on which a chip and a blocking structure are arranged, the chip and the blocking structure are arranged adjacent to each other, the chip is electrically connected to the substrate, and a heat-conducting layer is formed on the surface of the chip facing away from the substrate; providing a heat dissipation cover, comprising a supporting portion, and a top cover connected to the top of the supporting portion, the top cover comprising a first top cover, a second top cover, and a connecting portion connecting the first top cover and the second top cover, the first top cover and the connecting portion forming a protruding portion protruding in a direction away from the supporting portion; arranging the heat dissipation cover on the substrate, the heat dissipation cover covering the chip and the blocking structure, the first top cover being located on the top of the heat-conducting layer, and the protruding portion at least covering the heat-conducting layer, and the second top cover being located on the side of the heat-conducting layer and in contact with the blocking structure.

[0008] Compared with the prior art, the technical solution of the embodiment of the present invention has the following advantages:

[0009] In the packaging structure provided by the embodiment of the present invention, a heat dissipation cover covering the chip and a blocking structure is arranged on the substrate, the top cover of the heat dissipation cover includes a first top cover located on the top of the heat conductive layer, a second top cover located on the side of the heat conductive layer, and a connecting portion connecting the first top cover and the second top cover, the first top cover and the connecting portion constitute a protruding portion protruding in a direction away from the supporting portion, the protruding portion at least covers the heat conductive layer, and the blocking structure is located on the substrate below the second top cover and is arranged adjacent to the chip, one end of the blocking structure is fixed on the substrate, and the other end is in contact with the second top cover; the embodiment of the present invention adopts a heat dissipation cover with a protruding portion The heat cover, the raised portion at least covers the heat-conducting layer, and a blocking structure in contact with the second top cover is arranged on the substrate at the side of the chip, and the blocking body of the blocking structure is arranged opposite to the side wall of the chip, so that the blocking structure and the heat dissipation cover cooperate with each other to effectively isolate the chip from the remaining space under the second top cover, which is beneficial to preventing the material of the heat-conducting layer from sputtering toward the substrate due to melting in the subsequent high-temperature process, which is correspondingly beneficial to reducing the probability of damage to other components in the substrate or the remaining space under the second top cover, thereby improving the reliability of the packaging structure; in addition, the heat dissipation area of ​​the top cover is increased through the connection portion of the heat dissipation cover, thereby further improving the heat dissipation of the packaging structure.

[0010] In the packaging method provided by the embodiment of the present invention, a chip and a blocking structure arranged adjacent to the chip are arranged on a substrate, a heat-conducting layer is formed on the surface of the chip facing away from the substrate, and a heat-dissipating cover covering the chip and the blocking structure is arranged on the substrate, the heat-dissipating cover comprises a supporting portion and a top cover connected to the top of the supporting portion, the top cover comprises a first top cover located on the top of the heat-conducting layer, a second top cover located on the side of the heat-conducting layer, and a connecting portion connecting the first top cover and the second top cover, the first top cover and the connecting portion constitute a protruding portion protruding in a direction away from the supporting portion, and the protruding portion at least covers the heat-conducting layer, and the second top cover is in contact with the blocking structure; the present invention The embodiment adopts a heat dissipation cover with a protrusion, which at least covers the heat conductive layer, and a blocking structure in contact with the second top cover is arranged on the substrate on the side of the chip, and the blocking body of the blocking structure is arranged relative to the side wall of the chip, so that the blocking structure and the heat dissipation cover cooperate with each other to effectively isolate the chip from the remaining space under the second top cover, which is beneficial to preventing the material of the heat conductive layer from sputtering toward the substrate due to melting in the subsequent high-temperature process, which is correspondingly beneficial to reducing the probability of damage to other components in the substrate or the remaining space under the second top cover, thereby improving the reliability of the packaging structure; in addition, the heat dissipation area of ​​the top cover is increased through the connection part of the heat dissipation cover, thereby further improving the heat dissipation of the packaging structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 It is a schematic diagram of the structure of a packaging structure;

[0012] Figure 2 is a schematic structural diagram of a first embodiment of a packaging structure of the present invention;

[0013] Figure 3 yes Figure 2 A local enlarged view at the position of the dotted box;

[0014] Figure 4 is a structural schematic diagram of a second embodiment of a packaging structure of the present invention;

[0015] Figure 5 is a schematic structural diagram of a third embodiment of a packaging structure of the present invention;

[0016] Figures 6 to 9 is a schematic diagram corresponding to each step in the first embodiment of the packaging method of the present invention;

[0017] Fig.10 is a schematic diagram of a blocking structure in a second embodiment of a packaging method of the present invention;

[0018] Fig.11 It is a schematic diagram of arranging a heat sink on the second top cover in the third embodiment of the packaging method of the present invention. DETAILED DESCRIPTION

[0019] As can be seen from the background technology, the performance of the packaging structure still needs to be improved. Now, combined with a schematic diagram of a packaging structure, the reasons why the performance of the packaging structure needs to be improved are analyzed.

[0020] refer to Figure 1 , Figure 1 It is a structural diagram of a packaging structure.

[0021] The packaging structure includes: a substrate 10; a heat dissipation cover 11, the heat dissipation cover 11 includes a top cover plate 12 and a support portion 13 connected to the top cover plate 12, the support portion 13 is located between the top cover plate 12 and the substrate 10 and is located on the peripheral side of the top cover plate 12, and the heat dissipation cover 11 and the substrate 10 form a cavity 14; a chip 15 is located in the cavity 14, the chip 15 is welded on the substrate 10 and is electrically connected to the substrate 10; a heat conductive layer 16 is located between the top of the chip 15 and the top cover plate 12 and is combined with the top cover plate 12; a metal plating layer 18 is located between the heat conductive layer 16 and the chip 15; a component 17 is located in the cavity 14 and on the side of the chip 15, the component 17 is welded on the substrate 10 and is electrically connected to the substrate 10.

[0022] It has been found through research that the packaging process usually includes a high-temperature process. For example, the process of welding the heat dissipation cover 11 and the substrate 10, the process of implanting the solder balls on the back of the substrate 10, and the subsequent process of welding the solder balls on the back of the substrate in the packaging structure to the PCB board all need to undergo high-temperature reflow. In the high-temperature process, if the melting point of the thermal conductive layer 16 is low (for example, the thermal conductive layer 16 usually adopts an indium layer, and the melting point of indium is low), it is easy to cause the material of the thermal conductive layer 16 to melt and sputter, which is easy to have an adverse effect on the substrate 10. Moreover, when there are components 17 on the substrate 10 on the side of the chip 15, it is also easy to cause the components 17 to be damaged, thereby affecting the reliability of the packaging structure.

[0023] In order to solve the technical problem, in the packaging structure provided by the embodiment of the present invention, a heat dissipation cover covering the chip and a blocking structure is arranged on the substrate, the top cover of the heat dissipation cover includes a first top cover located on the top of the heat conductive layer, a second top cover located on the side of the heat conductive layer, and a connecting portion connecting the first top cover and the second top cover, the first top cover and the connecting portion constitute a protruding portion protruding in a direction away from the supporting portion, the protruding portion at least covers the heat conductive layer, and the blocking structure is located on the substrate below the second top cover and is arranged adjacent to the chip, one end of the blocking structure is fixed on the substrate, and the other end is in contact with the second top cover; the embodiment of the present invention adopts a protruding portion having a protruding portion. The heat dissipation cover of the raised portion, the raised portion at least covers the heat conductive layer, and a blocking structure in contact with the second top cover is arranged on the substrate at the side of the chip, and the blocking body of the blocking structure is arranged relative to the side wall of the chip, so that the blocking structure and the heat dissipation cover cooperate with each other to effectively isolate the chip from the remaining space under the second top cover, which is beneficial to preventing the material of the heat conductive layer from sputtering toward the substrate due to melting in the subsequent high-temperature process, which is correspondingly beneficial to reducing the probability of damage to other components in the substrate or the remaining space under the second top cover, thereby improving the reliability of the packaging structure; in addition, the heat dissipation area of ​​the top cover is increased through the connection portion of the heat dissipation cover, thereby further improving the heat dissipation of the packaging structure.

[0024] In order to make the above-mentioned purposes, features and advantages of the embodiments of the present invention more obvious and understandable, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0025] Combined with reference Figure 2 and Figure 3 , Figure 2 is a schematic structural diagram of a first embodiment of a packaging structure of the present invention, Figure 3 yes Figure 2 A partial enlarged view of the dashed box.

[0026] The packaging structure includes: a substrate 100; a chip 110, which is located on the substrate 100 and electrically connected to the substrate 100; a heat-conducting layer 130, which is located on the surface of the chip 110 facing away from the substrate 100; a heat-dissipating cover 101, which is located on the substrate 100 and covers the chip 110, wherein the heat-dissipating cover 101 includes a supporting portion 103 located on the substrate 100, and a top cover 102 connected to the top of the supporting portion 103, wherein the top cover 102 includes a first top cover 1021 located on the top of the heat-conducting layer 130, a second top cover 1022 located on the side of the heat-conducting layer 130, and a heat-dissipating cover 101 connected to the first top cover 1021. 1021 and a connecting portion 1023 of a second top cover 1022, the first top cover 1021 and the connecting portion 1023 constitute a protruding portion 1025 protruding in a direction away from the supporting portion 103, and the protruding portion 1025 at least covers the thermal conductive layer 130; a blocking structure 104, located on the substrate 100 below the second top cover 1022 and adjacent to the chip 110, one end of the blocking structure 104 is fixed on the substrate 100, and the other end is in contact with the second top cover 1022, and the blocking structure 104 at least includes a blocking body portion 1041 arranged opposite to the side wall of the chip 110.

[0027] The substrate 100 serves as a packaging carrier, and is used to provide support for the chip 110 , and to provide an electrical connection path between the chip 110 and an external circuit, thereby achieving packaging integration and electrical integration of the chip 110 .

[0028] The substrate 100 may include a package substrate, an interposer, or a printed circuit board (PCB). As an example, the substrate 100 is a package substrate.

[0029] In this embodiment, the chip 110 is a first chip.

[0030] Specifically, the type of the first chip is determined according to actual functional requirements or application scenarios. For example, the first chip may include one or more of a radio frequency chip, a memory chip, an ASIC (Application-Specific Integrated Circuit) chip, a CPU (Central Processing Unit) chip, a GPU (Graphics Processing Unit) chip, and an FPGA (Field-Programmable Gate Array) chip. In other embodiments, the first chip may also be other chips according to actual process requirements.

[0031] In this embodiment, the first chip is soldered to the substrate 100 by flip chip packaging technology. Accordingly, the packaging structure further includes: a conductive bump 150 located between the chip 110 and the substrate 100 and electrically connecting the chip 110 and the substrate 100 .

[0032] The conductive bumps 150 are used to achieve heat conduction of the chip 110 and also to achieve electrical connection between the chip 110 and the substrate 100 .

[0033] The material of the conductive bump 150 may include one or more of copper, aluminum, gold, nickel, silver, palladium and tin. As an example, the material of the conductive bump 150 is tin.

[0034] In other embodiments, the packaging structure further includes: a bottom filling layer.

[0035] The bottom filling layer is located between the chip 110 and the substrate 100 , and is also filled in gaps between the conductive bumps 150 .

[0036] The bottom filling layer can reduce the impact of the mismatch in thermal expansion coefficients between the chip 110 and the substrate 100, redistribute stress and strain, avoid failure of the conductive bumps 150, and help improve the reliability of welding between the chip 110 and the substrate 100, thereby helping to improve the reliability of the obtained packaging structure.

[0037] As an example, the material of the bottom filling layer includes epoxy resin. In other embodiments, the material of the bottom filling layer can also be made of other thermosetting materials, which can be selected by those skilled in the art according to actual needs and are not limited here.

[0038] In this embodiment, the packaging structure further includes: a component 140 , which is located on the substrate 100 at the side of the chip 110 and is electrically connected to the substrate 100 .

[0039] The component 140 includes one or both of a passive component and a second chip. As an example, the component 140 is a passive component.

[0040] It should be noted that the components may be active components or passive components, wherein the active components may include chips and the passive components may include capacitors, resistors or inductors.

[0041] In this embodiment, the heat conducting layer 130 is not disposed on the top of the component 140 .

[0042] The heat conducting layer 130 is used to conduct heat to the chip 110 during operation of the chip 110 , thereby transferring the heat generated by the chip 110 to the heat dissipation cover 101 , thereby achieving heat dissipation of the packaging structure, which in turn helps to extend the reliability and life of the packaging structure.

[0043] In this embodiment, the heat conducting layer 130 is fixedly connected to the chip 110 by welding, and the heat conducting layer 130 is fixedly connected to the heat dissipation cover 101 by welding, so as to improve the heat conduction effect of the heat conducting layer 130 .

[0044] The material of the heat-conducting layer 130 includes indium, indium-silver alloy, silver, tin, tin-silver alloy or tin-lead alloy. The above materials have excellent thermal conductivity coefficients and improve the thermal conductivity of the heat-conducting layer 130. As an example, the material of the heat-conducting layer 130 is indium.

[0045] The heat dissipation cover 101 is fixed on the substrate 100 and covers the chips and components on the substrate 100 , thereby achieving packaging and heat dissipation of the chips and components.

[0046] It should be noted that the heat conducting layer 130 is located between the surface of the chip 110 facing away from the substrate 100 and the first top cover 1021 , so that the heat generated during the operation of the chip 110 is conducted to the heat dissipation cover 101 through the heat conducting layer 130 , and then the heat is conducted to the outside through the heat dissipation cover 101 .

[0047] The material of the heat dissipation cover 101 is a thermally conductive material, which is conducive to quickly transferring heat from the packaging structure to the outside, thereby improving the heat dissipation efficiency of the packaging structure. For example, the material of the heat dissipation cover 101 may include one or more of stainless steel, copper, aluminum, iron, tungsten, molybdenum, diamond and graphene.

[0048] As an example, the material of the heat dissipation cover 101 may be a metal thermal conductive material, so as to facilitate the processing and forming of the heat dissipation cover 101. For example, the heat dissipation cover 101 may be formed by a stamping process.

[0049] In this embodiment, the heat dissipation cover 101 includes a top cover plate 102 and a support portion 103 located between the top cover plate 102 and the substrate 100. The support portion 103 is located on the peripheral side of the top cover plate 102 and is connected to the top cover plate 102. The top cover plate 102 and the support portion 103 form a cavity (not marked), thereby covering the chips and components on the substrate 100.

[0050] The top cover plate 102 is used to achieve heat conduction with the heat conducting layer 130 on the top of the chip 110 .

[0051] The support part 103 is fixed on the substrate 100. For example, the support part 103 is welded on the substrate 100, or the support part 103 is fixed on the substrate 100 by a heat conductive adhesive.

[0052] Specifically, the top cover 102 includes a first top cover 1021 located at the top of the heat-conducting layer 130, a second top cover 1022 located at the side of the heat-conducting layer 130, and a connecting portion 1023 connecting the first top cover 1021 and the second top cover 1022. The first top cover 1021 and the connecting portion 1023 constitute a protruding portion 1025 protruding in a direction away from the supporting portion 103. The protruding portion 1025 at least covers the heat-conducting layer 130, which is beneficial for preventing the material of the heat-conducting layer 130 from sputtering toward the substrate 100 due to melting in a subsequent high-temperature process through the connecting portion 1023.

[0053] Moreover, the first top cover 1021 and the connecting portion 1023 form a protruding portion 1025 protruding in a direction away from the supporting portion 103 , which is beneficial to improving the thickness consistency of the top cover 102 , thereby reducing the processing complexity of the top cover 102 .

[0054] In addition, the heat dissipation area of ​​the top cover 102 is increased through the connection portion 1023, thereby further improving the heat dissipation performance of the packaging structure.

[0055] In this embodiment, the second top cover 1022 surrounds the first top cover 1021 , and accordingly, the connection portion 1023 surrounds the heat-conducting layer 130 , thereby being able to block the sputtered material of the heat-conducting layer 130 from all directions, thereby improving the blocking effect of the connection portion 1023 .

[0056] In other embodiments, according to actual needs, the second top cover and the first top cover may also adopt other layouts to block the material of the heat conducting layer 130 at a specific position.

[0057] like Figure 3 As shown, in this embodiment, along a direction parallel to the top surface of the substrate 100 , there is a gap 105 between the side wall of the chip 110 and the side wall of the connecting portion 1023 , thereby reducing the difficulty of the protruding portion 1025 covering the thermal conductive layer 130 .

[0058] In this embodiment, the protrusion 1025 also covers a portion of the thickness of the chip 110, so that the connection portion 1023 can completely shield the heat conducting layer 130. In other embodiments, the chip may not be covered by the protrusion.

[0059] One end of the blocking structure 104 is fixed on the substrate 100, and the other end is in contact with the second top cover 1022. The blocking structure 104 is arranged adjacent to the chip 110, and the blocking body 1041 of the blocking structure 104 is arranged opposite to the side wall of the chip, so that the blocking structure 104 and the heat dissipation cover 101 cooperate with each other to effectively isolate the chip 110 from the remaining space under the second top cover 1022, which is beneficial to preventing the material of the heat conductive layer 130 from melting and sputtering toward the substrate 100 in the subsequent high-temperature process, which is correspondingly beneficial to reducing the probability of other components in the remaining space under the substrate 100 or the second top cover 1022 being damaged, thereby improving the reliability of the packaging structure.

[0060] In this embodiment, the second top cover 1022 is located on the top of the component 140, and the blocking structure 104 is located between the chip 110 and the component 140, so that the chip 110 and the component 140 are blocked by the connecting portion 1023 and the blocking structure 104, thereby reducing the probability of material of the thermal conductive layer 130 sputtering onto the component 140.

[0061] In this embodiment, the blocking structure 104 is located at the connection position between the second top cover 1022 and the connecting portion 1023, so that the component 140 can be located closer to the chip 110, which is beneficial to reducing the volume of the packaging structure. In addition, the blocking structure 104 is located at the connection position between the second top cover 1022 and the connecting portion 1023, which is beneficial to improving the support capability of the blocking structure 104 for the top cover 102.

[0062] In this embodiment, the blocking structure 104 surrounds the chip 110 , so that the chip 110 can be disposed in a closed area, thereby further improving the blocking effect on the material of the heat conducting layer 130 .

[0063] In this embodiment, the melting point of the barrier structure 104 is higher than 250 degrees Celsius. The melting point of the barrier structure 104 is higher than 250 degrees Celsius, which improves the high temperature resistance of the barrier structure 104 in the high temperature process of the packaging process, thereby ensuring the integrity and structural stability of the barrier structure 104 while reducing the restrictions on the high temperature process of the packaging process (for example, the subsequent high temperature reflow process of forming solder balls on the back side of the substrate 100 facing away from the chip 110 or the subsequent high temperature reflow process of soldering the solder balls on the back side of the substrate 400 in the packaging structure to the PCB board).

[0064] In one embodiment, the melting point of the heat-conducting layer 130 is lower than 250 degrees Celsius. By making the melting point of the blocking structure 104 higher than 250 degrees Celsius, the melting point of the blocking structure 104 is correspondingly made higher than the melting point of the heat-conducting layer 130 .

[0065] In this embodiment, the blocking structure 104 only includes a blocking body 1041 , and the blocking body 1041 is used to play a blocking role.

[0066] In this embodiment, the material of the blocking body portion 1041 includes one or more of metal, diamond, graphene and epoxy resin, which is beneficial to improving the reliability of the blocking body portion 1041.

[0067] Specifically, the metal material may include one or more of stainless steel, copper, aluminum, iron, tungsten and molybdenum, so as to improve the high temperature resistance of the blocking body 1041 .

[0068] According to the material of the blocking body 1041, a suitable process can be selected to fix the blocking body 1041 on the substrate 100. For example, the blocking body 1041 can be fixed on the substrate 100 by a heat-conductive or non-heat-conductive adhesive layer. For another example, when the material of the blocking body 1041 is metal, the blocking body 1041 can also be welded to the substrate 100.

[0069] In this embodiment, the blocking structure 104 is in contact with the second top cover 1022, and the blocking structure 104 and the second top cover 1022 may be fixedly connected without the use of additional connecting components. The heat or gas in the space surrounded by the blocking structure 104 and the protrusion 1025 may enter the remaining space through the interface between the blocking structure 104 and the second top cover 1022, thereby achieving temperature or air pressure balance.

[0070] In this embodiment, the packaging structure further includes: a metal plating layer 120 located between the heat conducting layer 130 and the chip 110 .

[0071] The metal coating 120 and the thermal conductive layer 130 have better wettability. Under the influence of high-temperature process, the metal coating 120 and the thermal conductive layer 130 usually form a eutectic layer at the interface due to mutual diffusion between the materials. Therefore, the metal coating 120 can be used to improve the bonding strength between the chip 110 and the thermal conductive layer 130, thereby correspondingly improving the heat dissipation efficiency.

[0072] The material of the metal plating layer 120 includes one or more of gold, silver and copper. It should be noted that gold, silver or copper have excellent thermal conductivity, which is conducive to transferring the heat generated by the chip 110 to the heat conducting layer 130. As an example, the metal plating layer 120 is a gold plating layer.

[0073] It should be noted that, in other embodiments, the metal plating layer is also located between the heat conductive layer and the heat dissipation cover plate.

[0074] Figure 4 It is a structural schematic diagram of the second embodiment of the packaging structure of the present invention.

[0075] The differences between this embodiment and the above embodiment are as follows: the blocking structure 204 includes a blocking body 2041 and an elastic part 2042 located between the top of the blocking body 2041 and a second top cover (not shown).

[0076] The elastic portion 2042 can be compressed, which helps to reduce the requirements on the height accuracy of the blocking structure 204 and improve the installation reliability of the heat dissipation cover on the substrate.

[0077] In this embodiment, the material of the elastic part 2042 includes rubber or silicone. Rubber or silicone has good flexibility and is easy to be manufactured into products of various shapes and sizes. Moreover, pores are easily formed inside the rubber or silicone material, so that the heat or gas in the space surrounded by the blocking structure 204 and the protrusion can enter the remaining space through the pores in the rubber or silicone.

[0078] It should be noted that the elastic part 2042 can be made of high temperature resistant rubber or high temperature resistant silicone, which can easily meet the requirements of the melting point of the blocking structure 204, thereby improving the reliability of the blocking structure 204. For example, the material of the elastic part 2042 can include one or more of fluororubber, silicone rubber, borosilicate rubber, fluorosilicone rubber, silicon nitrogen rubber or methyl vinyl silicone.

[0079] Figure 5 Schematic diagram of the third embodiment of the packaging structure of the present invention

[0080] The similarities between this embodiment and the above embodiment are not repeated here. The difference between this embodiment and the above embodiment is that the packaging structure further includes a heat sink 360 located on the second top cover 3022 .

[0081] Since the first top cover 3021 and the connecting portion 3023 form a protruding portion (not shown) protruding in a direction away from the supporting portion (not shown), the flatness of the top area of ​​the packaging structure is improved by providing the heat sink 360 on the second top cover 3022. Moreover, the heat sink 360 is helpful to further improve the heat dissipation performance of the packaging structure.

[0082] Specifically, the heat sink 360 has a groove 365, which effectively increases the heat dissipation area of ​​the heat sink 360, thereby improving the heat dissipation effect.

[0083] In this embodiment, the second top cover surrounds the first top cover, and correspondingly, the heat sink 360 surrounds the raised portion.

[0084] In this embodiment, the heat sink 360 is in contact with the connecting portion 3023 , thereby improving the heat dissipation effect of the packaging structure.

[0085] In this embodiment, the heat sink 360 is made of a heat-conducting material, thereby effectively improving the heat dissipation efficiency of the packaging structure. For example, the heat sink 360 can be made of a heat-conducting material such as copper or aluminum.

[0086] In this embodiment, the packaging structure further includes: a thermal interface layer 370 located between the heat sink 360 and the second top cover 3022 .

[0087] The thermal interface layer 370 is used to fix the heat sink 360 on the second top cover 3022 and to achieve heat conduction between the second top cover 3022 and the heat sink 360 .

[0088] Correspondingly, the present invention also provides a packaging method for a packaging structure. Figures 6 to 9 It is a schematic diagram corresponding to each step in the first embodiment of the packaging method of the present invention.

[0089] Combined with reference Figures 6 to 8 , providing a substrate 400, on which a chip 410 (such as Figure 6 ) and the blocking structure 404 (as shown Figure 7 The chip 410 is electrically connected to the substrate 400, and a heat conducting layer 430 (as shown in FIG. Figure 8 As shown in the figure, the chip 410 and the blocking structure 404 are arranged adjacent to each other, and the blocking structure 404 at least includes a blocking body portion 4041 arranged opposite to the side wall of the chip 410.

[0090] The substrate 400 serves as a packaging carrier, thereby realizing packaging integration and electrical integration of the chip 410. The substrate 400 may include a packaging substrate, an interposer, or a printed circuit board. As an example, the substrate 400 is a packaging substrate.

[0091] By arranging the chip 410 and the blocking structure 404 on the substrate 400 , after a heat dissipation cover is subsequently arranged on the substrate 400 , the heat dissipation cover can cover the chip 410 and the blocking structure 404 .

[0092] In this embodiment, the distance (not shown) from the top of the blocking structure 404 to the substrate 400 is smaller than the distance from the surface of the chip 410 facing away from the substrate 400 to the substrate 400 .

[0093] In other embodiments, the distance from the top of the blocking structure to the substrate is greater than or equal to the distance from the surface of the chip facing away from the substrate to the substrate.

[0094] The following describes in detail the steps of disposing the chip 410 and the blocking structure 404 on the substrate 400 and forming the heat conducting layer 430 on the chip 410 according to an embodiment of the present invention in conjunction with the accompanying drawings.

[0095] refer to Figure 6 , a chip 410 is set on the substrate 400.

[0096] In this embodiment, the chip 410 is a first chip.

[0097] In this embodiment, the first chip 410 is soldered to the substrate 400 by using a flip chip packaging technology. Accordingly, the front side of the first chip 410 faces the substrate 400 .

[0098] Therefore, a conductive bump 450 is formed between the chip 410 and the substrate 400 , and the conductive bump 450 electrically connects the chip 410 and the substrate 400 .

[0099] The chip 410 is fixed on the substrate 400 via conductive bumps 450 . The conductive bumps 450 are used to achieve heat conduction of the chip 410 and also to achieve electrical connection between the chip 410 and the substrate 400 .

[0100] The material of the conductive bump 450 may include one or more of copper, aluminum, gold, nickel, silver, palladium and tin. As an example, the material of the conductive bump 450 is tin.

[0101] In this embodiment, in the step of arranging the chip 410 on the substrate 400 , a metal plating layer 420 is formed on the surface of the chip 410 facing away from the substrate 400 .

[0102] The metal plating layer 420 and the subsequently formed heat conducting layer 430 (such as Figure 8 The metal coating 420 and the thermal conductive layer 430 have better wettability. Under the influence of the high temperature process, the metal coating 420 and the thermal conductive layer 430 usually form a eutectic layer at the interface due to the mutual diffusion between the materials. Therefore, the metal coating 420 can be used to improve the bonding strength between the chip 410 and the thermal conductive layer 430, thereby correspondingly improving the heat dissipation efficiency.

[0103] The material of the metal plating layer 420 includes one or more of gold, silver and copper. It should be noted that gold, silver or copper have excellent thermal conductivity, which is conducive to transferring the heat generated by the chip 410 to the heat conducting layer 430. As an example, the metal plating layer 420 is a gold plating layer.

[0104] As an example, the metal plating layer 420 may be formed on the back side of the first chip 410 by sputtering or chemical plating.

[0105] In other embodiments, after the chip 410 is disposed on the substrate 400 via the conductive bumps 450 , the packaging method further includes: forming a bottom filling layer between the chip 410 and the substrate 400 , and the bottom filling layer is also filled in the gaps between the conductive bumps 450 .

[0106] The bottom filling layer can reduce the impact of the mismatch in thermal expansion coefficients between the chip 410 and the substrate 400, redistribute stress and strain, avoid failure of the conductive bump 450, and help improve the reliability of welding between the chip 410 and the substrate 400, thereby helping to improve the reliability of the obtained packaging structure.

[0107] As an example, the material of the bottom filling layer includes epoxy resin. In other embodiments, the material of the bottom filling layer can also be made of other thermosetting materials, which can be selected by those skilled in the art according to actual needs and are not limited here.

[0108] In this embodiment, a component 440 is further disposed on the substrate 400 , and the component 440 is electrically connected to the substrate 400 .

[0109] The component 440 includes one or both of a passive component and a second chip. As an example, the component 440 is a passive component.

[0110] In this embodiment, the heat conducting layer is not provided on the top of the component 440 .

[0111] In this embodiment, the chip 410 and the component 440 are mounted on the substrate 400 respectively.

[0112] refer to Figure 7 After the chip 410 is disposed on the substrate 400 , a blocking structure 404 is disposed on the substrate 400 at the side of the chip, and the blocking body portion 4041 is disposed opposite to the side wall of the chip 410 .

[0113] After a heat dissipation cover is subsequently disposed on the substrate 400 , the blocking structure 404 is used to contact the second top cover of the heat dissipation cover, thereby achieving a blocking effect on the material of the heat conducting layer 430 .

[0114] In this embodiment, the blocking structure 404 and the chip 410 are disposed adjacent to each other, so that the blocking structure 404 can cooperate with the heat dissipation cover to effectively isolate the chip 410 from the remaining space under the second top cover.

[0115] In this embodiment, the blocking structure 404 is located between the chip 410 and the component 440 .

[0116] After a heat dissipation cover is subsequently set on the substrate 400, the second top cover of the heat dissipation cover is located on the top of the component 440. By making the blocking structure 404 located between the chip 410 and the component 440, the chip 410 and the component 440 are blocked by the connecting part of the heat dissipation cover and the blocking structure 404, thereby reducing the probability of the material of the thermal conductive layer 430 being sputtered onto the component 440.

[0117] In this embodiment, the melting point of the blocking structure 404 is higher than 250 degrees Celsius, which is beneficial to improving the high temperature resistance of the blocking structure 404 in the high temperature process of the packaging process, thereby ensuring the integrity and structural stability of the blocking structure 404 while reducing the restrictions on the high temperature process of the packaging process (for example, during the process of welding the heat dissipation cover to the substrate 400, when implanting the solder balls on the back of the substrate 400, and subsequently welding the solder balls on the back of the substrate 400 in the packaging structure to the PCB board).

[0118] In one embodiment, the melting point of the heat-conducting layer 430 is lower than 250 degrees Celsius. By making the melting point of the blocking structure 404 higher than 250 degrees Celsius, the melting point of the blocking structure 404 is correspondingly made higher than the melting point of the heat-conducting layer 430 .

[0119] In this embodiment, the blocking structure 404 only includes a blocking body portion 4041 . The blocking body portion 4041 is fixed on the substrate 400 . The blocking body portion 4041 is used to block the material of the heat conducting layer 430 .

[0120] In this embodiment, the material of the blocking body portion 4041 includes one or more of metal, diamond, graphene and epoxy resin, which is beneficial to improving the reliability of the blocking body portion 4041.

[0121] Specifically, the metal material may include one or more of stainless steel, copper, aluminum, iron, tungsten and molybdenum, so as to improve the high temperature resistance of the blocking body part 4041 .

[0122] According to the material of the blocking body 4041, a suitable process can be selected to fix the blocking body 4041 on the substrate 400. For example, the blocking body 4041 can be fixed on the substrate 400 by a heat-conductive or non-heat-conductive adhesive layer. For another example, when the material of the blocking body 4041 is metal, the blocking body 4041 can also be welded to the substrate 400.

[0123] In this embodiment, the blocking structure 404 surrounds the chip 410 , and after a heat dissipation cover is subsequently disposed on the substrate 400 , the chip 410 can be disposed in a closed area, thereby further improving the blocking effect on the material of the heat conducting layer 430 .

[0124] In other embodiments, according to actual needs, the blocking structure may also be located on the substrate at a local position on the side of the chip to block the material of the heat conducting layer at a specific position, or the blocking structure may also be discretely arranged along the circumference of the chip.

[0125] In this embodiment, after the chip 410 and the component 440 are arranged on the substrate 400 , a blocking structure 404 is arranged on the substrate 400 , which is beneficial to improve the position accuracy of the blocking structure 404 and facilitate the installation of the chip 410 and the component 440 .

[0126] It should be noted that, in other embodiments, the arrangement order of the chip and the blocking structure may be swapped, or the arrangement order of the components and the blocking structure may be swapped.

[0127] refer to Figure 8 A heat conducting layer 430 is formed on the surface of the chip 410 facing away from the substrate 400 .

[0128] Specifically, a heat conducting layer 430 is formed on the metal plating layer 420 .

[0129] Subsequently, a heat dissipation cover is arranged on the substrate 400, and the heat conductive layer 430 is used to conduct heat to the chip 410 during the operation of the chip 410, thereby transferring the heat generated by the chip 410 to the heat dissipation cover, thereby achieving heat dissipation of the packaging structure, which correspondingly helps to extend the reliability and life of the packaging structure.

[0130] The material of the heat-conducting layer 430 includes indium, indium-silver alloy, silver, tin, tin-silver alloy or tin-lead alloy. As an example, the material of the heat-conducting layer 430 is indium.

[0131] Continue to refer Figure 8 Before forming the heat conducting layer 430 on the surface of the chip 410 facing away from the substrate 400 , the method further includes: forming a first soldering layer 460 on the surface of the chip 410 facing away from the substrate 400 .

[0132] Specifically, a first soldering layer 460 is formed on the metal plating layer 420 .

[0133] The first soldering layer 460 is helpful to improve the strength of the welding connection between the metal plating layer 420 and the thermal conductive layer 430 after reflow soldering.

[0134] It should be noted that the material of the first soldering layer 460 is a volatile soldering flux, so that it can be volatilized by heat during the reflow process.

[0135] Continue to refer Figure 8 Before setting the heat dissipation cover on the substrate 400 , the method further includes: forming a second soldering layer 470 on the thermal conductive layer 430 .

[0136] The second soldering layer 470 is helpful to improve the strength of the welding connection between the thermal conductive layer 430 and the heat dissipation cover after reflow soldering.

[0137] It should be noted that the material of the second soldering layer 470 is a volatile soldering flux, so that it can be volatilized by heat during the reflow process.

[0138] It should also be noted that, in this embodiment, the first soldering layer 460 is formed after the barrier structure 404 is provided on the substrate 400. In other embodiments, the order of the step of providing the barrier structure and the step of forming any one of the first soldering layer, the thermal conductive layer and the second soldering layer may also be exchanged according to actual conditions.

[0139] refer to Fig. 9 A heat dissipation cover 401 is provided, including a support portion 403 and a top cover 402 connected to the top of the support portion 403, the top cover 402 includes a first top cover 4021, a second top cover 4022, and a connecting portion 4023 connecting the first top cover 4021 and the second top cover 4022, the first top cover 4021 and the connecting portion 4023 constitute a protrusion 4025 protruding in a direction away from the support portion 403.

[0140] The heat dissipation cover 401 is used to be subsequently fixed on the substrate 400 and cover the chips and components on the substrate 401 , so as to achieve packaging and heat dissipation of the chips and components. The protrusion 4025 is used to cover the heat conducting layer 430 .

[0141] The material of the heat dissipation cover 401 is a thermally conductive material, which is conducive to quickly conducting heat from the packaging structure to the outside, thereby improving the heat dissipation efficiency of the packaging structure. For example, the material of the heat dissipation cover 401 may include one or more of stainless steel, copper, aluminum, iron, tungsten, molybdenum, diamond and graphene.

[0142] As an example, the material of the heat dissipation cover 401 may be a metal thermal conductive material, so as to facilitate the processing and formation of the heat dissipation cover 401 .

[0143] In this embodiment, the support portion 403 is located on the peripheral side of the top cover plate 402 and connected to the top cover plate 402 . The top cover plate 402 and the support portion 403 form a cavity (not shown) to cover the chips and components on the substrate 400 .

[0144] The top cover plate 402 is used to achieve heat conduction with the heat conducting layer 430 on the top of the chip 410 , so that the heat generated by the chip 410 during operation can be transferred to the top cover plate 402 via the heat conducting layer 430 .

[0145] The support portion 403 is used to be fixed on the substrate 400 .

[0146] It should be noted that the first top cover 4021 and the connecting portion 4023 form a protruding portion 4025 protruding in a direction away from the supporting portion 403 , which is beneficial to improving the thickness consistency of the top cover 402 , thereby reducing the processing complexity of the top cover 402 .

[0147] It should also be noted that the heat dissipation area of ​​the top cover 402 is increased by the connection portion 4023, thereby further improving the heat dissipation of the packaging structure.

[0148] In this embodiment, the second top cover 4022 surrounds the first top cover 4021 , and correspondingly, the connection portion 4023 surrounds the heat-conducting layer 430 , thereby being able to block the sputtered material of the heat-conducting layer 430 from all directions, thereby improving the blocking effect of the connection portion 4023 .

[0149] In other embodiments, according to actual needs, the second top cover and the first top cover may also adopt other layouts to block the material of the heat conducting layer at a specific position.

[0150] Continue to refer Fig. 9 The heat dissipation cover 401 is arranged on the substrate 400, and the heat dissipation cover 401 covers the chip 410 and the blocking structure 404. The first top cover 4021 is located on the top of the thermal conductive layer 430, and the protrusion 4025 at least covers the thermal conductive layer 430. The second top cover 4022 is located on the side of the thermal conductive layer 430 and contacts the blocking structure 404.

[0151] After the heat dissipation cover 401 is arranged on the substrate 400, the heat conductive layer 130 is located between the surface of the chip 110 facing away from the substrate 400 and the first top cover 4021, so that the heat generated during the operation of the chip 410 is conducted to the heat dissipation cover 401 through the heat conductive layer 430, and then the heat is conducted to the outside through the heat dissipation cover 401.

[0152] It should be noted that the protrusion 4025 at least covers the thermal conductive layer 430, one end of the blocking structure 404 is fixed on the substrate 400, and the other end is in contact with the second top cover 4022, the blocking structure 404 is arranged adjacent to the chip 410, and the blocking body 4041 of the blocking structure 404 is arranged opposite to the side wall of the chip, so that the blocking structure 404 and the heat dissipation cover 401 cooperate with each other to effectively isolate the chip 410 from the remaining space under the second top cover 4022, which is beneficial to prevent the material of the thermal conductive layer 430 from melting and sputtering toward the substrate 400 in the subsequent high-temperature process, which is correspondingly beneficial to reduce the probability of damage to other components in the substrate 400 or the remaining space under the second top cover 4022, thereby improving the reliability of the packaging structure.

[0153] In this embodiment, the support part 403 is fixed on the substrate 400. For example, the support part 403 is welded on the substrate 400, or the support part 403 is fixed on the substrate 400 by heat conductive adhesive.

[0154] In this embodiment, the distance (not shown) from the top of the blocking structure 404 to the substrate 400 is smaller than the distance from the surface of the chip 410 facing away from the substrate 400 to the substrate 400. Therefore, the protrusion 4025 also covers a portion of the thickness of the chip 410.

[0155] The protruding portion 4025 also covers a portion of the thickness of the chip 410 , which is beneficial for the connecting portion 4023 to completely shield the heat conducting layer 330 .

[0156] In other embodiments, the chip may not be covered by the protrusion.

[0157] In this embodiment, along a direction parallel to the top surface of the substrate 400 , there is a gap (not shown) between the side wall of the chip 410 and the side wall of the connecting portion 4023 , thereby reducing the difficulty of the protrusion 4025 covering the thermal conductive layer 4303 .

[0158] In this embodiment, the blocking structure 404 is located at the connection position between the second top cover 4022 and the connecting portion 4023 , so that the component 440 can be located closer to the chip 410 , which is beneficial to reducing the volume of the packaging structure.

[0159] Moreover, the blocking structure 404 is located at the connection position between the second top cover 4022 and the connecting portion 4023 , which is beneficial to improving the supporting ability of the blocking structure 404 to the top cover 402 .

[0160] In this embodiment, the blocking structure 404 is in contact with the second top cover 4022, and the blocking structure 404 and the second top cover 4022 may be fixedly connected without the use of additional connecting components, which is beneficial for allowing the heat or gas in the space enclosed by the blocking structure 404 and the protrusion 4025 to enter the remaining space through the interface between the blocking structure 404 and the second top cover 4022, thereby achieving temperature or air pressure balance.

[0161] In this embodiment, the second top cover 4022 is located above the top of the component 440 .

[0162] The second top cover 4022 is located above the top of the component 440, and the blocking structure 404 is located between the chip 410 and the component 440, so that the chip 410 and the component 440 are blocked by the connecting portion 4023 and the blocking structure 404, thereby reducing the probability of material of the thermal conductive layer 430 sputtering onto the component 440.

[0163] Continue to refer Figure 8 After the heat dissipation cover 401 is disposed on the substrate 400 , the method further includes: welding and fixing the heat conductive layer 430 , the chip 410 and the heat dissipation cover 401 through a reflow process.

[0164] The heat-conducting layer 430 is fixedly connected to the chip 410 by welding, and the heat-conducting layer 430 is fixedly connected to the heat dissipation cover 401 by welding, so as to improve the heat conduction effect of the heat-conducting layer 430 .

[0165] In this embodiment, the temperature of the reflow process is greater than the melting point of the heat conducting layer 430 .

[0166] Specifically, the step of welding and fixing the heat-conducting layer 430 with the chip 410 and the heat dissipation cover 401 through a reflow soldering process includes: performing a reflow soldering process on the first soldering layer 460 and the second soldering layer 470 .

[0167] It should be noted that, under the action of the first soldering layer 460, the thermal conductive layer 430 is welded and fixedly connected to the metal plating layer 420, and under the action of the second soldering layer 470, the thermal conductive layer 430 is welded and fixedly connected to the heat dissipation cover 401; at the same time, the first soldering layer 460 and the second soldering layer 470 are volatilized by heat during the reflow process.

[0168] In this embodiment, the heat conducting layer 430 is fixedly connected to the chip 410 and the heat dissipation cover 401 by welding in the same reflow process, thereby simplifying the process steps.

[0169] It should be noted that the packaging structure of the first embodiment can be obtained by the aforementioned packaging method or by other packaging methods. For the specific description of the packaging method of the aforementioned embodiment, reference can be made to the relevant description of the packaging structure of the first embodiment.

[0170] Fig.10 Schematic diagram of the blocking structure in the second embodiment of the packaging method of the present invention.

[0171] The differences between this embodiment and the above embodiment are as follows: in the step of providing a blocking structure 504 on a substrate (not shown), the blocking structure 504 includes a blocking body 5041 and an elastic part 5042 located on the top of the blocking body 5041 .

[0172] The elastic portion 5042 can be compressed, which helps to reduce the requirements on the height accuracy of the blocking structure 504 and improve the installation reliability of the heat dissipation cover on the substrate.

[0173] Correspondingly, after a heat dissipation cover is subsequently disposed on the substrate, the second top cover of the heat dissipation cover contacts the elastic portion 5042 .

[0174] In this embodiment, the material of the elastic portion 5042 includes rubber or silicone.

[0175] It should be noted that the elastic portion 5042 can be made of high temperature resistant rubber or high temperature resistant silicone, which can easily meet the requirement of the melting point of the blocking structure 504 , thereby improving the reliability of the blocking structure 504 .

[0176] It should be noted that the packaging structure of the aforementioned second embodiment can be obtained by adopting the aforementioned packaging method, and can also be obtained by adopting other packaging methods. For the specific description of the packaging method of the aforementioned embodiment, reference can be made to the relevant description of the packaging structure of the second embodiment.

[0177] Fig.11 Schematic diagram of a third embodiment of the packaging method of the present invention in which a heat sink is arranged on the second top cover

[0178] The similarities between this embodiment and the above embodiment are not repeated here. The difference between this embodiment and the above embodiment is that: the packaging method further includes: arranging a heat sink 660 on the second top cover 6022 .

[0179] Since the first top cover 6021 and the connecting portion 6023 form a protruding portion (not shown) protruding in a direction away from the supporting portion (not shown), the flatness of the top area of ​​the packaging structure is improved by providing the heat sink 660 on the second top cover 6022. Moreover, the heat sink 660 is helpful to further improve the heat dissipation performance of the packaging structure.

[0180] Specifically, the heat sink 660 has a groove 665, which effectively increases the heat dissipation area of ​​the heat sink 660, thereby improving the heat dissipation effect.

[0181] In this embodiment, the second top cover 6022 surrounds the first top cover 6021 , and correspondingly, the heat sink 660 surrounds the protruding portion.

[0182] In this embodiment, the heat sink 660 is made of a thermally conductive material, thereby effectively improving the heat dissipation efficiency of the packaging structure. For example, the heat sink 660 can be made of a thermally conductive material such as copper or aluminum.

[0183] In this embodiment, the heat sink 660 is in contact with the connecting portion 6023 , thereby improving the heat dissipation effect of the formed packaging structure.

[0184] In this embodiment, the heat sink 660 is fixed on the second top cover 6022 via a thermal interface layer 670 .

[0185] The thermal interface layer 670 is used to fix the heat sink 660 on the second top cover 6022 and to achieve heat conduction between the second top cover 6022 and the heat sink 660 .

[0186] As an example, after a heat dissipation cover (not shown) is provided on the substrate (not shown), a heat sink 660 is provided on the second top cover 6022. For example, after the heat conductive layer (not shown) is welded and fixedly connected with the chip (not shown) and the heat dissipation cover by a reflow process, the heat sink 660 is provided on the second top cover 6022.

[0187] In other embodiments, a heat sink may be disposed on the second top cover before the heat dissipation cover is disposed on the substrate.

[0188] It should be noted that the packaging structure of the third embodiment can be obtained by the aforementioned packaging method or by other packaging methods. For the specific description of the packaging method of the aforementioned embodiment, reference can be made to the relevant description of the packaging structure of the third embodiment.

[0189] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A packaging structure, characterized in that: include: substrate; A chip, located on the substrate and electrically connected to the substrate; A heat-conducting layer, located on a surface of the chip facing away from the substrate; a heat dissipation cover, located on the substrate and covering the chip and the blocking structure, the heat dissipation cover comprising a support portion located on the substrate and a top cover connected to the top of the support portion, the top cover comprising a first top cover located on the top of the heat conductive layer, a second top cover located on the side of the heat conductive layer, and a connecting portion connecting the first top cover and the second top cover, the first top cover and the connecting portion forming a protruding portion protruding in a direction away from the support portion, the protruding portion at least covering the heat conductive layer; A blocking structure is located on the substrate below the second top cover and is arranged adjacent to the chip. One end of the blocking structure is fixed on the substrate and the other end is in contact with the second top cover. The blocking structure at least includes a blocking main body portion arranged opposite to the side wall of the chip.

2. The packaging structure according to claim 1, characterized in that: The second top cover surrounds the first top cover; The blocking structure surrounds the chip.

3. The packaging structure according to claim 1, characterized in that: The blocking structure is located at a connection position between the second top cover and the connection portion.

4. The packaging structure according to claim 1, characterized in that: The melting point of the barrier structure is higher than 250 degrees Celsius.

5. The packaging structure according to claim 1 or 4, characterized in that: The material of the blocking body portion includes one or more of metal, diamond, graphene and epoxy resin.

6. The packaging structure according to claim 1 or 4, characterized in that: The blocking structure further includes an elastic portion located between the blocking body portion and the second top cover.

7. The packaging structure according to claim 6, characterized in that: The material of the elastic part includes rubber or silicone.

8. The packaging structure according to claim 1 or 4, characterized in that: The material of the heat conducting layer includes indium, indium silver alloy, silver, tin, tin silver alloy or tin lead alloy.

9. The packaging structure according to claim 1, characterized in that: Along a direction parallel to the top surface of the substrate, there is a gap between the side wall of the chip and the side wall of the connecting portion.

10. The packaging structure according to claim 1, wherein: The packaging structure further includes: a heat sink located on the second top cover.

11. The packaging structure according to claim 1, characterized in that: The protrusion also covers a portion of the thickness of the chip.

12. The packaging structure according to claim 1, wherein: The packaging structure further includes: components, located on the substrate and electrically connected to the substrate; The second top cover is located on the top of the component; The blocking structure is located between the chip and the components.

13. The packaging structure according to claim 12, characterized in that: The chip is a first chip, and the components include one or both of a passive component and a second chip.

14. A packaging method, characterized in that: include: Providing a substrate, on which a chip and a blocking structure are arranged, the chip is electrically connected to the substrate, a heat conducting layer is formed on a surface of the chip facing away from the substrate, the chip and the blocking structure are arranged adjacent to each other, and the blocking structure at least includes a blocking body portion arranged opposite to a side wall of the chip; A heat dissipation cover is provided, comprising a support portion and a top cover connected to the top of the support portion, wherein the top cover comprises a first top cover, a second top cover, and a connecting portion connecting the first top cover and the second top cover, wherein the first top cover and the connecting portion constitute a protruding portion protruding in a direction away from the support portion; The heat dissipation cover is arranged on the substrate, the heat dissipation cover covers the chip and the blocking structure, the first top cover is located on the top of the heat conductive layer, and the protrusion at least covers the heat conductive layer, and the second top cover is located on the side of the heat conductive layer and contacts the blocking structure.

15. The packaging method according to claim 14, characterized in that: After the heat dissipation cover is arranged on the substrate, the method further includes: welding and fixing the heat conductive layer, the chip and the heat dissipation cover through a reflow process.

16. The packaging method according to claim 15, characterized in that: In the step of providing the substrate, a first soldering layer is formed between the surface of the chip facing away from the substrate and the heat conducting layer; Before the heat dissipation cover is arranged on the substrate, the method further includes: forming a second soldering layer on the heat conductive layer; The step of welding and fixing the heat-conducting layer to the chip and the heat dissipation cover by a reflow soldering process includes: performing a reflow soldering process on the first soldering layer and the second soldering layer.

17. The packaging method according to claim 14, characterized in that: In the step of providing a substrate, the blocking structure surrounds the chip; In the step of providing a heat dissipation cover, the second top cover surrounds the first top cover.

18. The packaging method according to claim 14, characterized in that: The melting point of the barrier structure is higher than 250 degrees Celsius.

19. The packaging method according to claim 14 or 18, characterized in that: The material of the blocking body portion includes one or more of metal, diamond, graphene and epoxy resin.

20. The packaging method according to claim 14 or 18, characterized in that: In the step of arranging a blocking structure on the substrate, the blocking structure further includes an elastic portion located on the top of the blocking body portion.

21. The packaging method according to claim 20, characterized in that: The material of the elastic part includes rubber or silicone.

22. The packaging method according to claim 14, characterized in that: In the step of arranging the heat dissipation cover on the substrate, a gap is provided between the side wall of the chip and the side wall of the connecting portion along a direction parallel to the top surface of the substrate.

23. The packaging method according to claim 14, characterized in that: In the step of providing a substrate, the distance from the top of the blocking structure to the substrate is smaller than the distance from the surface of the chip facing away from the substrate to the substrate; In the step of arranging the heat dissipation cover on the substrate, the protrusion also covers a portion of the thickness of the chip.

24. The packaging method according to claim 14, characterized in that: In the step of providing a substrate, components are also arranged on the substrate, and the components are electrically connected to the substrate; The blocking structure is located between the chip and the components; In the step of arranging the heat dissipation cover on the substrate, the second top cover is located above the top of the component.

25. The packaging method according to claim 14, characterized in that: The packaging method further includes: arranging a heat sink on the second top cover.

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