Electronic package

Abstract

An electronic package includes: a bearing structure having a bearing surface; the electronic element is arranged on the bearing surface; a heat dissipation structure; the heat conductor is arranged on the electronic component and is jointed with the heat dissipation structure; and a boundary metal compound layer formed between the heat dissipation structure and the heat conductor. According to the embodiment of the invention, the metal compound layer can be formed between the heat dissipation structure and the heat conductor in the electronic packaging piece to strengthen the bonding effect of the heat dissipation structure and the heat conductor, so that the heat conduction efficiency and the heat dissipation effect in the electronic packaging piece are improved, and the reliability and the service life of the electronic packaging piece are ensured.

Description

Technical Field

[0001] The present invention relates to an electronic package, in particular to an electronic package with a heat dissipation structure. Background Art

[0002] With the rise and rapid development of various applications and technologies that require high-speed computing, such as e-sports games, high-resolution audio and video multimedia, and autonomous driving, as well as the demand for miniaturization of related equipment, the number of components contained in semiconductor chips (ICs) using packaging structures such as flip chip ball grid arrays (FCBGA) is not only increasing, but the processing and computing speeds are also getting faster and faster, making the heat generated therein more and more considerable, and the requirements for heat dissipation structures are also getting higher and higher.

[0003] Figure 1 FIG. 1 is a cross-sectional schematic diagram of an existing semiconductor package 1. Figure 1 As shown, the semiconductor package 1 includes a package substrate 10, a semiconductor chip 11 mounted on the upper side of the package substrate 10 in a flip-chip manner, and a heat sink 12. The heat sink 12 is disposed on the upper surface of the semiconductor chip 11 by means of a thermal interface material (TIM) 13, and the support legs 121 of the heat sink 12 are mounted on the package substrate 10 by means of an adhesive layer 14. In order to conduct the heat generated by the semiconductor chip 11 to the heat sink 12 more quickly and effectively, liquid metal is often used as the thermal interface material 13 in recent years to improve the conduction efficiency on the path from the semiconductor chip 11 to the heat sink 12 by means of its thermal conductivity of up to 80-128W / mK. On the other hand, since the heat sink 12 is mostly made of metal (mainly copper), in order to prevent oxidation of its surface, the surface of the heat sink 12 is usually plated with a metal anti-oxidation layer 122, but the nickel (Ni) component and the main component gallium (Ga) in the liquid metal thermal interface material (TIM) 13 need a long time to react, that is, the nickel must be dissolved into the gallium before the two will gradually combine. This leads to poor bonding between the heat sink 12 and the liquid metal thermal interface material (TIM) 13, and even a gap g is generated, which causes the loss of heat conduction and dissipation performance. Therefore, how to overcome the above-mentioned problems of the prior art has become a topic that needs to be solved urgently. Summary of the invention

[0004] In view of the various deficiencies of the above-mentioned prior art, the present invention provides an electronic package, comprising: a supporting structure; an electronic component disposed on the supporting surface; a heat conductor disposed on the electronic component; a heat dissipation structure disposed on the electronic component, with the heat conductor sandwiched between the electronic component and the heat dissipation structure; and an interfacial metal compound layer formed between the heat dissipation structure and the heat conductor.

[0005] In the aforementioned electronic package, the heat dissipation structure is made of a binary compound material, and the intermetallic compound layer is formed by the binary compound material and the heat conductor.

[0006] In the aforementioned electronic package, the heat conductor is a thermal interface material (TIM) layer.

[0007] In the aforementioned electronic package, the thermally conductive interface material layer is made of liquid metal.

[0008] In the aforementioned electronic package, the binary compound material is a copper / nickel alloy, and the liquid metal contains gallium (Ga).

[0009] In the aforementioned electronic package, the intermetallic compound layer is copper gallium (CuGa2).

[0010] In the aforementioned electronic package, the content ratio of copper to nickel in the binary compound material is 3:1.

[0011] In the aforementioned electronic package, the copper content of the binary compound material is at least 60% to 90%.

[0012] In the aforementioned electronic package, the nickel content in the binary compound material is at least 10% to 30%.

[0013] In the aforementioned electronic package, the thickness of the intermetallic compound layer is less than or equal to 10 μm.

[0014] By implementing the present invention, an intermetallic compound layer can be formed between the heat dissipation structure and the heat conductor in the electronic package to strengthen the bonding effect between the heat dissipation structure and the heat conductor, thereby improving the heat conduction efficiency and heat dissipation effect inside the electronic package, and ensuring the reliability and life of the electronic package. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a cross-sectional schematic diagram of a conventional semiconductor package.

[0016] Figure 2 It is a cross-sectional schematic diagram of the electronic package of the present invention.

[0017] Main component symbols

[0018] 1 Semiconductor Package

[0019] 10 Package substrate

[0020] 11. Semiconductor Chip

[0021] 12 Heat sink

[0022] 121 Support feet

[0023] 122 Metal Anti-Oxidation Layer

[0024] 13 Thermal Interface Materials

[0025] 14 Adhesive layer

[0026] 2 Electronic packaging

[0027] 21 Load-bearing structure

[0028] 211 bearing surface

[0029] 22 Electronic components

[0030] 23. Heat dissipation structure

[0031] 231 Top sheet

[0032] 232 Support feet

[0033] 24 Heat Conductor

[0034] 241 Intermetallic compound layer

[0035] g Clearance

[0036] d Thickness. DETAILED DESCRIPTION

[0037] The following describes the implementation of the present invention by means of specific embodiments. Those skilled in the art can easily understand other advantages and technical effects of the present invention from the contents described in this specification.

[0038] It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification for the understanding and reading of those skilled in the art, and are not used to limit the limiting conditions under which the present invention can be implemented, so they have no substantial technical significance. Any modification of the structure, change in the proportion relationship, or adjustment of the size should still fall within the scope of the technical content recorded in the present invention without affecting the technical effects and purposes that can be achieved by the present invention. At the same time, the terms such as "on", "first", "second", and "one" cited in this specification are only for the convenience of description, and are not used to limit the scope of the implementation of the present invention. Changes or adjustments in their relative relationships should also be regarded as the scope of the implementation of the present invention without substantially changing the technical content.

[0039] Figure 2 FIG. 2 is a cross-sectional schematic diagram of an electronic package of the present invention. Figure 2 As shown, the electronic package 2 of this embodiment includes: a supporting structure 21 having a supporting surface 211; an electronic component 22, which is arranged on the supporting surface 211; a heat dissipation structure 23; a heat conductor 24, which is arranged on the electronic component 22 and combined with the heat dissipation structure 23; and an interfacial metal compound layer 241 formed between the heat dissipation structure 23 and the heat conductor 24.

[0040] The supporting structure 21 is, for example, a packaging substrate with a circuit layer, a silicon interposer (TSI) with conductive through-silicon via (TSV), or other board types, and has a supporting surface 211. The circuit layer is, for example, a fan-out redistribution layer (RDL).

[0041] It should be understood that the supporting structure 21 may also be a substrate, component or structure of other supporting components, such as a lead frame, a wafer, or other plates with metal routing, and is not limited to the above embodiments.

[0042] The electronic component 22 is mounted on the carrying surface 211 of the carrying structure 21 and is electrically connected to the circuit layer (not shown) in the carrying structure 21. The electronic component 22 can be an active component, a passive component, a package structure or a combination thereof. The active component can be, for example, an application processor (AP) for a mobile device such as a mobile phone or a semiconductor chip such as other computing chips, and the passive component can be, for example, a resistor, a capacitor, and an inductor.

[0043] The heat dissipation structure 23 is, for example, a heat sink, a heat dissipation cover (Lid) or other components or structures with equivalent functions. In this embodiment, a heat dissipation cover is used as an example. The heat dissipation structure 23 has a top sheet 231 and support legs 232. The support legs 232 are fixedly connected to the supporting surface 211 around the electronic component 22, and the bottom surface of the top sheet 231 is opposite to the top surface of the electronic component 22.

[0044] In order to protect the heat dissipation structure 23 and prevent it from being oxidized even if it is in contact with air for a long time, the present embodiment adopts the method of making the entire heat dissipation structure 23 made of a binary compound material to avoid the problem of poor bonding between the existing anti-oxidation surface layer formed on the outer surface of the heat dissipation structure and the thermal conductive interface material of the liquid metal material. At the same time, omitting the plating process can also simplify the overall manufacturing process and reduce costs.

[0045] The binary compound material used in this embodiment is a copper / nickel alloy, such as cupronickel. Cupronickel has high oxidation resistance and a thermal conductivity of up to 40W / m·K. Therefore, the heat dissipation structure 23 made of it can have fast heat conduction and accelerate heat dissipation, and will not cause oxidation problems during long-term use.

[0046] A heat conductor 24 is further provided between the top surface of the electronic component 22 and the bottom surface of the top sheet 231 of the heat dissipation structure 23 to more efficiently conduct the heat generated by the electronic component 22 to the heat dissipation structure 23 and then dissipate it into the environment. Preferably, the heat conductor 24 is a thermal interface material (TIM) layer. More preferably, the thermal interface material layer of this embodiment is composed of a liquid metal, and the liquid metal contains gallium (Ga).

[0047] As mentioned above, the heat dissipation structure 23 in this embodiment is made of a binary compound of copper / nickel alloy material, wherein nickel (Ni) can be dissolved in the liquid metal, and the excess copper (Cu) will combine with gallium in the liquid metal to form an intermetallic compound (IMC) layer 241 of copper gallium (CuGa2) material. That is, the intermetallic compound layer 241 is formed by the binary compound material and the heat conductor 24.

[0048] By combining copper and gallium in the components of the binary compound material constituting the heat dissipation structure 23 and the liquid metal constituting the heat conductor 24, an intermetallic compound layer 241 is formed between the heat dissipation structure 23 and the heat conductor 24. The intermetallic compound layer 241 can simultaneously form a stable bond with the heat dissipation structure 23 above it and the heat conductor 24 below it, thereby achieving the effect of strengthening the bond between the heat dissipation structure 23 and the heat conductor 24.

[0049] In some embodiments, in order to achieve an optimal balance among bonding effect, thermal conductivity, and anti-oxidation properties, the content ratio of copper to nickel in the copper / nickel alloy as the binary compound may be set to 3:1.

[0050] In other embodiments, the copper content in the binary compound material may be set to at least 60% to 90% based on different considerations, such as the desire to achieve better heat conduction efficiency or to have more copper react with gallium in the liquid metal to accelerate the formation of intermetallic compounds.

[0051] In some other embodiments, the nickel content in the binary compound material may be set at 10% to 30% based on other different considerations, such as the desire to improve the anti-oxidation effect and optimize the anti-oxidation effect without excessively compromising the thermal conductivity and the formation rate of intermetallic compounds.

[0052] In addition, since the function of the boundary metal compound layer 241 is to improve the bonding effect between the heat dissipation structure 23 and the heat conductor 24 and provide a better heat conduction efficiency between the two, the thickness d of the boundary metal compound layer 241 does not need to be too thick. In some cases, an overly thick boundary metal compound layer 241 may be easily broken. Therefore, in some embodiments, the thickness d of the boundary metal compound layer 241 can be set to be less than or equal to 10 μm.

[0053] In summary, the electronic package of the present invention, by using the heat dissipation structure in the electronic package to form an intermetallic compound layer (copper gallium dioxide) with a heat conductor (liquid metal containing gallium) with better oxidation resistance, strengthens the bonding effect between the heat dissipation structure and the heat conductor, thereby improving the heat conduction efficiency and heat dissipation effect inside the electronic package, so as to meet the heat dissipation requirements required for high-speed processing and computing. At the same time, the reliability and life of the electronic package can be ensured.

[0054] The above embodiments are only used to illustrate the principles and technical effects of the present invention, and are not used to limit the present invention. Any person skilled in the art may modify the above embodiments without violating the inventive concept and scope of the present invention. Therefore, the scope of protection of the present invention should be as listed in the claims.

Claims

1. An electronic package, comprising: load-bearing structure; An electronic component is disposed on the supporting structure; A heat conductor is disposed on the electronic component; A heat dissipation structure is disposed on the electronic component and the heat conductor is sandwiched between the electronic component and the heat dissipation structure; as well as An intermetallic compound layer is formed between the heat dissipation structure and the heat conductor.

2. The electronic package of claim 1, wherein: The heat dissipation structure is made of a binary compound material, and the intermetallic compound layer is formed by the binary compound material and the heat conductor.

3. The electronic package of claim 2, wherein: The heat conductor is a heat conductive interface material layer.

4. The electronic package as claimed in claim 3, wherein: The thermal conductive interface material layer is made of liquid metal.

5. The electronic package of claim 4, wherein: The binary compound material is a copper / nickel alloy, and the liquid metal contains gallium.

6. The electronic package of claim 5, wherein: The intermetallic compound layer is copper gallium dioxide.

7. The electronic package of claim 5, wherein: The content ratio of copper to nickel in this binary compound material is 3:

1.

8. The electronic package of claim 5, wherein: The copper content of the binary compound material is at least 60% to 90%.

9. The electronic package of claim 5, wherein: The nickel content in the binary compound material is at least 10% to 30%.

10. The electronic package of claim 1, wherein: The thickness of the intermetallic compound layer is less than or equal to 10 μm.

Images