Chip package to waveguide conversion devices, RF devices and radar devices

Abstract

This application discloses a chip-to-waveguide conversion device, a radio frequency device, and a radar device. The conversion device is a simple, low-loss, and wide-impedance-bandwidth chip-to-waveguide transition structure. Conventional E-shaped patch conversion devices previously had gaps, and gap processing errors could cause frequency deviation. This conversion device maintains low loss while achieving a wider bandwidth, avoiding the design of overly narrow gaps and the resulting degradation of RF performance caused by gap processing errors, thereby ensuring the RF performance of the chip-to-waveguide transition structure.

Description

Technical Field

[0001] The present application relates to, but is not limited to, semiconductor radio frequency technology, and in particular to a chip package to waveguide conversion device, a radio frequency device, and a radar device. Background Art

[0002] Converting RF signals from the chip package to an external structure is a complex technology. The RF signal from the bare chip first enters the chip package and then, through a connecting structure, is converted to an external waveguide / microstrip line / coaxial line or other transmission structure. An air waveguide is a structure used to transmit electromagnetic waves. It can be a hollow metal tube or a dielectric tube, used to guide the propagation of microwaves, millimeter waves, or light waves. Air waveguides offer low loss, a wide impedance bandwidth, and are easy to connect and integrate with other modules. Given these advantages, converting the chip's RF signal to an air waveguide is an essential engineering technology.

[0003] To implement this technical solution, the following issues need to be considered: What structure can be used to convert the radio frequency (RF) signal in the chip package to an external waveguide to achieve low loss and wide impedance bandwidth characteristics? This is a technical problem that needs to be solved urgently. Summary of the Invention

[0004] The present application provides a chip package to waveguide conversion device, a radio frequency device, and a radar device, which have a simple structure and can ensure the RF performance of the chip package to waveguide transition structure.

[0005] An embodiment of the present invention provides a chip package to waveguide conversion device, comprising: a first metal layer as a metal layer, a second metal layer, a third metal layer, a shielding metallized through hole, a conversion through hole, and a dielectric substrate provided between different metal layers to play a supporting role; wherein,

[0006] The second metal layer is used for laying out radio frequency (RF) wiring;

[0007] The third metal layer is used to set the patch component; the capacitor formed between the RF trace on the second metal layer and the patch component on the third metal layer introduces a capacitance characteristic;

[0008] The plurality of shielding metallized through holes are grounding through holes surrounding the patch component and the RF traces, and are used to guide the propagation of RF signals;

[0009] At least one of the conversion metallized through holes is provided on one end of the RF trace close to the patch component, for connecting the RF trace and the patch component and introducing inductance characteristics.

[0010] In an exemplary embodiment, the invention further comprises a connecting structure connecting the chip package and the waveguide structure, wherein the connecting structure forms a waveguide cavity surrounding the patch element;

[0011] The RF signal of the chip passes through the RF wiring and the patch element, and is converted into the waveguide structure through the waveguide cavity.

[0012] In an exemplary embodiment, the connection structure is a ball grid array (BGA) solder ball, or a connection structure formed by a surface metallized material.

[0013] In an exemplary embodiment, the waveguide structure is provided with an inner cavity, and the inner cavity is rectangular, elliptical, circular, or ridge-shaped.

[0014] In an exemplary embodiment, the RF trace includes: a substrate integrated waveguide (SIW), a microstrip line, a stripline, or a coplanar waveguide.

[0015] In an exemplary embodiment, the RF trace is a single-branch trace or a multi-branch trace;

[0016] One end of each branch close to the patch element is provided with a conversion metallization through hole.

[0017] In an exemplary embodiment, the RF trace is a single-branch trace; the single-branch trace is a half-Y-shaped single-branch trace;

[0018] The RF routing is a multi-branch routing; the multi-branch routing is a symmetrical fork-shaped three-branch routing.

[0019] In an exemplary embodiment, a projection of the RF trace on the third metal layer at least partially overlaps with the patch element.

[0020] In an exemplary embodiment, the overlapping length L of the projection of the RF trace on the third metal layer and the patch element is long enough to form a capacitor between the RF trace and the patch element, and to form a broadband resonant structure with the resonant circuit formed by the inductance introduced by the conversion metallized through hole.

[0021] In an exemplary embodiment, the overlapping length L is greater than or equal to one third of the length of the patch element.

[0022] In an exemplary embodiment, the RF trace is symmetrically fed or asymmetrically fed.

[0023] In one exemplary embodiment, the patch element comprises a rectangular patch.

[0024] In an exemplary embodiment, the connection structure includes a plurality of solder balls arranged in a circle around the patch element, and the plurality of solder balls constitute a waveguide cavity for the patch element to transmit signals; the inner circle formed by the plurality of solder balls includes at least one ridge protruding inwardly.

[0025] In an exemplary embodiment, the inner ring is a rectangular inner ring with the ridge provided therein.

[0026] In an exemplary embodiment, there is one ridge; the ridge is located in the middle of one side of the rectangular inner circle.

[0027] In an exemplary embodiment, there is one ridge; the ridge is located at a corner of the inner circle of the rectangle.

[0028] In an exemplary embodiment, the ridges include two ridges; the two ridges are respectively located in the middle of two opposite sides of the rectangular inner circle.

[0029] In an exemplary embodiment, the ridges include two ridges, and the two ridges are respectively arranged at two opposite corners of the rectangular inner circle.

[0030] In an exemplary embodiment, the inner ring is a circular ring or an elliptical ring with the ridge provided therein.

[0031] The present application also provides a radio frequency device, comprising: a package with an IC bare chip, and a PCB board; wherein the package further comprises the chip package to waveguide conversion device described in any one of the above items; and the PCB board is provided with a waveguide structure;

[0032] The RF signal from the IC die is converted into the waveguide structure through the patch element in the conversion device.

[0033] In an exemplary embodiment, a waveguide hole is further provided on the PCB board at a position corresponding to the patch element in the conversion device, and the IC bare chip transmits signals to the waveguide hole through the RF traces, patch elements, and waveguide channels in the conversion device.

[0034] In an exemplary embodiment, the cross-sectional shape of the waveguide hole is the same as the inner circle shape of the plurality of solder balls surrounding the patch element; the package body is mounted on the PCB board, and the plurality of solder balls are arranged in a circle around the boundary of the waveguide hole.

[0035] An embodiment of the present application further provides a radar device, comprising any one of the above-mentioned radio frequency devices; and an antenna structure electrically connected to the radio frequency device.

[0036] The chip package to waveguide conversion device provided in the embodiment of the present application is a chip package to waveguide transition structure with a simple structure, low loss, and wide impedance bandwidth. It avoids the gap in the E-shaped patch and the problem of frequency deviation caused by processing errors, thereby ensuring broadband and low loss characteristics.

[0037] Other features and advantages of the present invention will be described in the following description, and in part will become apparent from the description, or will be understood by practicing the present invention. The purposes and other advantages of the present invention can be realized and obtained by the structures particularly pointed out in the description, claims and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] The accompanying drawings are used to provide a further understanding of the technical solution of the present application and constitute a part of the specification. Together with the embodiments of the present application, they are used to explain the technical solution of the present application and do not constitute a limitation on the technical solution of the present application.

[0039] FIG1( a ) is an oblique top view of a component structure of a transition structure from chip packaging to waveguide;

[0040] FIG1( b ) is a front view of a structure for transitioning from a chip package to a waveguide;

[0041] FIG2( a ) is a top view of the structure of a conversion device transitioning from chip packaging to waveguide in an embodiment of the present application;

[0042] FIG2( b ) is a front view of the structure of the conversion device from chip packaging to waveguide in an embodiment of the present application;

[0043] FIG3( a ) is a schematic diagram of a form of RF routing in an embodiment of the present application;

[0044] FIG3( b ) is a schematic diagram of another form of RF routing in an embodiment of the present application;

[0045] FIG3( c ) is a schematic diagram of another form of RF routing in an embodiment of the present application;

[0046] Figure 4 This is a schematic diagram of the RF performance results of the chip package to waveguide conversion device in an embodiment of the present application;

[0047] Figure 5 Schematic top view of a first arrangement of multiple solder balls in an embodiment of the present application;

[0048] Figure 6 Schematic top view of a second arrangement of multiple solder balls in an embodiment of the present application;

[0049] Figure 7 Schematic top view of a third arrangement of multiple solder balls in an embodiment of the present application;

[0050] Figure 8 Schematic top view of a fourth arrangement of multiple solder balls in an embodiment of the present application;

[0051] Figure 9Schematic top view of a fifth arrangement of multiple solder balls in an embodiment of the present application;

[0052] Figure 10 is a top perspective view of a radio frequency device according to an embodiment of the present application;

[0053] Figure 11 This is a schematic top view of the PCB board in an embodiment of the present application. DETAILED DESCRIPTION

[0054] To make the purpose, technical solutions and advantages of this application more clear, the embodiments of this application will be described in detail below with reference to the accompanying drawings. It should be noted that, unless there is a conflict, the embodiments and features in the embodiments of this application can be combined with each other in any way.

[0055] To facilitate understanding of the present application, the present application will be described more fully below with reference to the accompanying drawings. The accompanying drawings provide embodiments of the present application. However, the present application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to make the disclosure of the present application more thorough and comprehensive.

[0056] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application.

[0057] It is understood that the terms "first" and "second" used in this application are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of such features. In the description of this application, "plurality" means at least two, for example, two, three, etc., unless otherwise specifically defined.

[0058] It can be understood that the “connection” in the following embodiments should be understood as “electrical connection”, “communication connection”, etc. if there is transmission of electrical signals or data between the connected circuits, modules, units, etc.

[0059] As used herein, the singular forms "a," "an," and "the" may also include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include," "comprising," "having," and the like specify the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof. Furthermore, the term "and / or" as used in this specification includes any and all combinations of the relevant listed items.

[0060] Figure 1(a) shows an oblique top view of the components of a transition structure from chip package to waveguide, and Figure 1(b) shows a front view thereof. As shown in Figures 1(a) and 1(b), in the chip package, an RF transmission line passes through an E-shaped patch 11 and through a cavity formed by solder balls 12, converting the RF signal from this cavity to a rectangular waveguide. Slots 14 in E-shaped patch 11 provide capacitance, while metallized vias 13 on E-shaped patch 11 (connecting the RF transmission line and E-shaped patch 11) provide inductance. The equivalent resonant circuits of the two form a broadband resonant structure. However, due to the limited machining accuracy of slots 14 in E-shaped patch 11, the transition structures shown in Figures 1(a) and 1(b) may experience frequency deviation. Since the resonant frequency is sensitive to the length and width of slots 14 in the transition structure, the RF performance of the transition device from chip package to waveguide shown in Figures 1(a) and 1(b) may be degraded.

[0061] In order to ensure the RF performance of the conversion structure from chip package to waveguide, the embodiment of the present application provides a chip package to waveguide conversion device, as shown in Figures 2(a) and 2(b), which can include: a first metal layer 1, a second metal layer 2, a third metal layer 3, a shielding metallized through hole 4, a conversion through hole 5, a connecting structure 6, and a dielectric substrate 7 provided between different metal layers to play a supporting role; wherein,

[0062] The first metal layer 1 is a metal ground layer. In one embodiment, the first metal layer 1 is entirely made of metal and is used as a reference ground for the third metal layer 3 .

[0063] The second metal layer 2 is provided below the first metal layer 1. The second metal layer 2 is used to lay out RF traces, such as the exemplary "Y"-shaped trace in FIG2(a). Capacitive characteristics are introduced through the capacitance formed between the RF trace on the second metal layer 2 and the patch component on the third metal layer 3. In one embodiment, an RF reference ground is provided around the RF trace. In the embodiment of the present application, the structure of the patch component between the second layer RF trace and the third layer changes the structure of the E-type patch structure that provides capacitive characteristics through the gap.

[0064] The third metal layer 3 is provided below the second metal layer 2 and is used for arranging patch components. In one embodiment, an RF reference ground is provided around the patch components.

[0065] Multiple shielding metallized vias 4 are provided between the first metal layer 1 and the third metal layer 3 around the patch components and RF traces. The multiple shielding metallized vias 4 are grounding vias around the patch components and RF traces, and are used to guide RF signal propagation and prevent leakage.

[0066] At least one conversion metallized through hole 5 is provided on one end of the RF trace close to the patch component, between the second metal layer 2 and the third metal layer 3, for connecting the RF trace and the patch component and introducing inductance characteristics.

[0067] The chip package to waveguide conversion device provided in the embodiment of the present application, on the one hand, forms a capacitive characteristic between the RF traces arranged on the second metal layer 2 and the patch elements arranged on the third metal layer 3, replacing the structure in the E-type patch structure shown in Figures 1(a) and 1(b) that provides capacitive characteristics through the gap. On the other hand, the inductive characteristics of the conversion structure are introduced through the conversion metallized through-hole 5 provided between the second metal layer 2 and the third metal layer 3. The equivalent circuit of the two constitutes a broadband resonant structure. The chip package to waveguide conversion device provided in the embodiment of the present application is a chip package to waveguide transition structure with a simple structure, low loss, and a wide impedance bandwidth. It avoids the problem of frequency deviation that may occur due to the processing accuracy of the gap in the E-shaped patch 11, and ensures broadband low-loss characteristics.

[0068] In the embodiment of the present application, the first metal layer 1, the second metal layer 2, the third metal layer 3, the shielding metallized through-hole 4, the conversion metallized through-hole 5, and the substrate medium 7 constitute a packaging structure or a part of the packaging connection structure. In an exemplary embodiment, the chip package to waveguide conversion device provided in the embodiment of the present application can convert the RF signal from the chip through the RF trace on the second metal layer 2 into the waveguide structure 8 through the waveguide cavity surrounded by the connecting structure 6. In one embodiment, the patch element provided on the third metal layer 3 serves as a signal conversion device, receives the signal transmitted from the chip to the RF trace, converts the signal to the waveguide structure 8, or receives the signal from the waveguide structure 8 and converts it to the RF trace, and finally receives it inside the chip.

[0069] In an exemplary embodiment, the connection structure 6 may be a ball grid array (BGA) solder ball, or a surface metallized material connection structure.

[0070] In one exemplary embodiment, the waveguide structure 8 is provided with a waveguide cavity, which can be rectangular, elliptical, circular, or ridge-shaped. In one embodiment, the waveguide structure 8 can be a PCB with waveguide holes, a full metal waveguide, or a plastic waveguide with metalized surface. The waveguide structure 8 and the chip package are located on both sides of the conversion device provided in the embodiment of the present application.

[0071] In an exemplary embodiment, the RF trace may include, but is not limited to, traces such as substrate integrated waveguide (SIW), microstrip, stripline, or coplanar waveguide.

[0072] In an exemplary embodiment, the RF trace in the transmission line transition may be a single-branch trace or a multi-branch trace.

[0073] In one embodiment, as shown in Figures 3(a) and 3(c), the RF trace is an exemplary single-branch trace in a half-Y shape, with a conversion metallized through-hole 5 provided at one end of the branch near the patch component. In some embodiments, the single-branch RF trace can also be a straight trace or a trace with other curved shapes.

[0074] In one embodiment, as shown in FIG3( b ), the RF trace is an exemplary symmetrical fork-shaped trace, including three branches, with a conversion metallization via 5 provided at one end of each branch near the patch element. Compared to a single-branch RF trace, a multi-branch symmetrical RF trace has better transmission efficiency.

[0075] In one exemplary embodiment, the projection of the RF trace on the third metal layer at least partially overlaps with the patch element, so that the capacitance formed between the patch element and the RF trace introduces a capacitive characteristic. In one embodiment, the overlapping length L between the projection of the RF trace on the third metal layer and the patch element is sufficiently long so that the resonant circuit formed by the capacitance formed between the RF trace and the patch element and the inductance introduced by the conversion metallized through-hole 5 can form a broadband resonant structure. In one embodiment, the overlapping length L can be greater than or equal to one-third of the length of the patch element. It should be noted that the length of the patch element refers to the length of the patch element in the direction in which the RF trace extends.

[0076] In one embodiment, the RF trace may be symmetrically fed or asymmetrically fed.

[0077] In an exemplary embodiment, the patch element provided on the third metal layer 3 may include, but is not limited to, a rectangular patch.

[0078] In an exemplary embodiment, the dielectric substrates 7 between different metal layers may be different dielectric substrates.

[0079] Figure 4 FIG. 1 is a schematic diagram of the RF performance results of the chip package to waveguide conversion device in an embodiment of the present application. Figure 4 As shown, the horizontal axis represents frequency (in GHz), the vertical axis on the left represents return loss (in dB), and the vertical axis on the right represents insertion loss (in dB). Figure 4 FIG4 shows the return loss and insertion loss in the frequency range from 70 to 85 GHz, where the solid line curve represents the return loss curve and the dotted line curve represents the insertion loss curve. Figure 4 The curve shown demonstrates the RF performance of the chip package to waveguide transition structure in the automotive millimeter-wave radar band, achieving high transmission efficiency, low loss, and wide bandwidth across the entire frequency band, ensuring RF performance.

[0080] In an exemplary embodiment, the connection structure includes a plurality of solder balls, which are arranged around a circle of the patch element, and the plurality of solder balls constitute a waveguide cavity for the patch element to transmit signals; for example, Figure 5 As shown, multiple solder balls 2a form a rectangular inner circle; of course, multiple solder balls 2a can also form a circular inner circle or a polygonal inner circle or an inner circle of other shapes, and the number of solder balls 2a can also be adjusted according to the situation, which is not limited here.

[0081] In an exemplary embodiment, in order to further reduce the area occupied by the package transition structure, the inner circle formed by the multiple solder balls includes at least one ridge protruding inwardly, so that the multiple solder balls are arranged in a ridge-like manner, wherein each ridge can be composed of one or more solder balls; in an embodiment, Figure 6 As shown, the ridge 21 is formed by a solder ball 2b.

[0082] Since the inner circle surrounded by the multiple solder balls 2b is provided with a ridge protruding toward the inner circle, the cavity surrounded by the multiple solder balls 2b forms a ridge waveguide cavity; wherein, the ridge waveguide cavity can be understood as a rectangular waveguide cavity that is bent inwardly. After bending, the length of the longest side of the cavity remains unchanged, so the transmission performance remains unchanged. However, after the cavity is bent, the area occupied by the cavity can be reduced, and the number of solder balls surrounding the cavity can also be reduced, which can ensure that the performance of the radiation plate will not be reduced when multiple solder balls transmit signals.

[0083] Specifically, such as Figure 6In the solder ball arrangement shown, multiple solder balls 2b are arranged in a rectangular inner circle. Since a ridge 21 is provided in the rectangular inner cavity, this cavity structure forms a ridge waveguide structure, which reduces the cutoff frequency of the waveguide cavity formed by the solder balls. Due to the reduction in the cutoff frequency, the long side of the waveguide cavity formed by the solder balls can be shortened while ensuring transmission performance. Figure 5 The arrangement of the rectangular cavity formed by the solder balls, Figure 6 The ridge waveguide structure formed by the plurality of solder balls 2b reduces the overall area occupied by the solder balls. Figure 6 The solder ball arrangement ensures that the performance will not be reduced when multiple solder balls 2b are used to transmit signals for patch components.

[0084] In an exemplary embodiment, only one ridge 21 is provided on the inner circle of the rectangle formed by the plurality of solder balls 2b, and the arrangement position of the ridge 21 can be adjusted according to specific needs; for example Figure 6 As shown in FIG, the ridge 21 is located in the middle of one side of the rectangular inner circle, or as shown in FIG. Figure 8 As shown, the ridge 21 is located at a corner of the inner circle of the rectangle.

[0085] In an exemplary embodiment, a plurality of ridges 21 may be provided on the inner rectangular circle formed by the plurality of solder balls 2b. The number and arrangement of the ridges 21 may be adjusted according to specific needs. For example, Figure 7 As shown in FIG, the rectangular inner circle is provided with two ridges 21, and the two ridges 21 are respectively located at the middle positions of the opposite two sides. Figure 9 As shown, the rectangular inner ring is provided with two ridges 21, which are located at two opposite corners.

[0086] The embodiment of the present application further provides a radio frequency device, comprising at least: a package with an IC bare chip, and a PCB board;

[0087] In which, the package body also includes a chip package to waveguide conversion device as described in any one of the embodiments of the present application, and the waveguide structure is arranged on a PCB board; the RF signal from the IC bare chip is converted into the waveguide structure through the patch element in the conversion device.

[0088] In an exemplary embodiment, the waveguide structure is a waveguide hole provided on the PCB board and corresponding one-to-one to the patch element 19 in the conversion device. The IC bare chip transmits signals to the waveguide hole through the waveguide cavity surrounded by the RF traces, patch elements, and multiple solder balls in the conversion device.

[0089] In an exemplary embodiment, the cross-sectional shape of the waveguide hole is the same as the shape of the cavity surrounded by multiple solder balls around the patch element; the package body is mounted on the PCB board, and the multiple solder balls are arranged in a circle around the boundary of the waveguide hole to ensure that the signal is smoothly transmitted from the waveguide cavity surrounded by the solder balls to the waveguide hole, which is beneficial to reducing signal transmission loss and improving signal transmission efficiency.

[0090] For example, the inner circle formed by multiple solder balls includes a ridge protruding into the circle. Figure 10 As shown, Figure 10 The structure of a radio frequency device in this embodiment is shown. The radio frequency device includes a package body in which an IC bare chip (not shown in the figure) is encapsulated, and a patch element 19 is provided on the surface of the package body. The IC bare chip is electrically connected to the patch element 19 through the above-mentioned RF trace. A plurality of solder balls 2b are also provided on the surface of the package body. The plurality of solder balls 2b and the patch element 19 are provided on the surface of the same side of the package body, and the plurality of solder balls 2b are arranged around the patch element 19. The package body is connected to the PCB board 3 through the plurality of solder balls 2b, and the plurality of solder balls are arranged in a circle around the boundary of the waveguide hole. The cross-sectional shape of the waveguide hole 31 provided on the PCB board 3 is the same as the inner circle surrounded by the plurality of solder balls, and also has a ridge 32, as shown in FIG. Figure 11 As shown in .

[0091] In one embodiment, the signal emitted by the IC die is transmitted to patch component 19, which then radiates the signal into a waveguide cavity formed by multiple solder balls 2b, which then transmits the signal to a waveguide hole on the PCB. The signal is further transmitted from the waveguide hole into a waveguide cavity formed by multiple solder balls 2b, which then transmits the signal to patch component 19, which then transmits the signal to the IC die.

[0092] In an exemplary embodiment, one or more patch elements 19 may be provided on the surface of the package body, and each patch element 19 is connected to the IC bare chip through the above-mentioned RF traces; at the same time, a circle of solder balls is arranged around each patch element 19, and the number of waveguide holes on the PCB board also corresponds one-to-one to the number of patch elements 19.

[0093] An embodiment of the present application also provides a radar device, comprising at least: the radio frequency device described in any one of the embodiments of the present application; and an antenna structure connected to a waveguide hole on a PCB board to realize signal transmission, wherein the antenna structure is preferably a waveguide antenna structure.

[0094] Although the embodiments disclosed in this application are as described above, the contents described are merely embodiments adopted to facilitate understanding of this application and are not intended to limit this application. Any person skilled in the art to which this application belongs may make any modifications and changes in the form and details of the implementation without departing from the spirit and scope disclosed in this application. However, the scope of patent protection of this application shall still be based on the scope defined by the attached claims.

Claims

1. A chip package to waveguide conversion device, characterized in that: include: The first metal layer, the second metal layer, the third metal layer, the shielding metallized through hole, the conversion metallized through hole, and the dielectric substrate provided between the different metal layers for supporting purposes are used as the metal stratum; wherein, The second metal layer is used for laying out radio frequency (RF) wiring; The third metal layer is used to set the patch component; the capacitor formed between the RF trace on the second metal layer and the patch component on the third metal layer introduces a capacitance characteristic; The plurality of shielding metallized through holes are grounding through holes surrounding the patch component and the RF traces, and are used to guide the propagation of RF signals; At least one of the conversion metallized through holes is provided on one end of the RF trace close to the patch component, for connecting the RF trace and the patch component and introducing inductance characteristics.

2. The chip package to waveguide conversion device according to claim 1, characterized in that: Also included is a connecting structure connecting the chip package and the waveguide structure, wherein the connecting structure forms a waveguide cavity surrounding the patch element; The RF signal of the chip passes through the RF wiring and the patch element, and is converted into the waveguide structure through the waveguide cavity.

3. The chip package to waveguide conversion device according to claim 2, characterized in that: The connection structure is a ball grid array package BGA solder ball, or a connection structure made of a surface metal material.

4. The chip package to waveguide conversion device according to claim 3, characterized in that: The waveguide structure is provided with an inner cavity, which is rectangular, elliptical, circular, or ridge-shaped.

5. The chip package to waveguide conversion device according to claim 1 or 2, characterized in that: The RF trace includes: substrate integrated waveguide SIW, or microstrip line, or strip line, or coplanar waveguide.

6. The chip package to waveguide conversion device according to claim 5, characterized in that: The RF routing is a single-branch routing or a multi-branch routing; One end of each branch close to the patch element is provided with a conversion metallization through hole.

7. The chip package to waveguide conversion device according to claim 6, characterized in that: The RF trace is a single-branch trace; the single-branch trace is a half-Y-shaped single-branch trace; The RF routing is a multi-branch routing; the multi-branch routing is a symmetrical fork-shaped three-branch routing.

8. The chip package to waveguide conversion device according to claim 1, 2, 6 or 7, characterized in that: A projection of the RF trace on the third metal layer at least partially overlaps with the patch element.

9. The chip package to waveguide conversion device according to claim 8, characterized in that: The overlapping length L between the projection of the RF trace on the third metal layer and the patch element is long enough so that the capacitance formed between the RF trace and the patch element and the resonant circuit formed by the inductance introduced by the conversion metallized through hole constitute a broadband resonant structure.

10. The chip package to waveguide conversion device according to claim 9, characterized in that: The overlapping length L is greater than or equal to one third of the length of the patch element.

11. The chip package to waveguide conversion device according to claim 1 or 2, characterized in that: The RF trace is symmetrically fed or asymmetrically fed.

12. The chip package to waveguide conversion device according to claim 1 or 2, characterized in that: The patch element includes a rectangular patch.

13. The chip package to waveguide conversion device according to claim 2, characterized in that: The connection structure includes a plurality of solder balls arranged in a circle around the patch element, and the plurality of solder balls constitute a waveguide cavity for the patch element to transmit signals; the inner circle formed by the plurality of solder balls includes at least one ridge protruding into the circle.

14. The chip package to waveguide conversion device according to claim 13, characterized in that: The inner ring is a rectangular inner ring with the ridge portion arranged therein.

15. The chip package to waveguide conversion device according to claim 14, characterized in that: There is one ridge; the ridge is located in the middle of one side of the rectangular inner circle, or the ridge is located in a corner of the rectangular inner circle.

16. The chip package to waveguide conversion device according to claim 14, characterized in that: The two ridges are respectively located at the middle of two opposite sides of the rectangular inner circle, or the two ridges are respectively arranged at two opposite corners of the rectangular inner circle.

17. A radio frequency device, characterized in that: include: A package with an IC bare chip and a PCB board; wherein the package further comprises the chip package to waveguide conversion device according to any one of claims 1 to 16; and the PCB board is provided with a waveguide structure; The RF signal from the IC die is converted into the waveguide structure through the patch element in the conversion device.

18. The radio frequency device according to claim 17, wherein: A waveguide hole is further provided on the PCB board at a position corresponding to the patch element in the conversion device, and the IC bare chip transmits signals to the waveguide hole through the RF wiring and patch element in the conversion device.

19. The radio frequency device according to claim 18, characterized in that The cross-sectional shape of the waveguide hole is the same as the inner circle shape of the multiple solder balls surrounding the patch element; the package body is mounted on the PCB board, and the multiple solder balls are arranged in a circle around the boundary of the waveguide hole.

20. A radar device, characterized in that: include: The radio frequency device according to any one of claims 17 to 19; The antenna structure is electrically connected to the radio frequency device.

Images