High-gain terahertz on-chip antenna for phased array system
Through an additive-like process, the high-gain terahertz on-chip antenna is designed, and the metal structure is used to reduce transmission losses and export heat, solving the problems of poor performance and heat aggregation of existing terahertz on-chip antennas, achieving high gain and low loss performance improvement.
Patent Information
- Application Number
- CN202411964661.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-30
- Publication Date
- 2025-03-28
AI Technical Summary
Existing terahertz on-chip antennas have problems with low radiation efficiency, low gain and thermal aggregation, resulting in degradation in performance.
An additive-like process is used to design a high-gain terahertz on-chip antenna, which uses the air microstrip antenna of the metal structure to reduce transmission losses, and quickly export internal heat through the metal structure to avoid heat accumulation.
It achieves high gain and low loss performance improvement of terahertz on-chip antenna, avoids performance degradation caused by thermal aggregation, and is suitable for phased array systems.
Smart Images
Figure CN119726062A_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the technical field of phased array antennas, and in particular relates to a high-gain terahertz on-chip antenna for a phased array system. Background Art
[0002] With the rapid development of electronic technology and processes, phased array antenna technology has become more and more mature, and is constantly developing towards high frequency bands, and terahertz band electronic equipment has gradually emerged. The terahertz band has rich spectrum resources, which can promote the further improvement of communication detection equipment capabilities after being utilized, especially for phased array antennas, which can effectively increase bandwidth, reduce volume, and improve integration. It has broad application prospects in satellite communications, 6G communications, space exploration and other fields.
[0003] Terahertz on-chip antennas are antennas that integrate antenna units with chips, usually based on silicon-based semiconductor process integration, and have performance disadvantages such as low radiation efficiency, low gain, and high transmission loss. At the same time, the heat concentration problem of phased array antenna systems is also a difficulty in application. Long-term operation with poor heat dissipation will lead to further performance degradation. Summary of the invention
[0004] The purpose of the present invention is to provide a high-gain terahertz on-chip antenna for a phased array system to solve the technical problem of poor performance of existing terahertz on-chip antennas.
[0005] To achieve the above object, the present invention adopts the following technical solution:
[0006] A high-gain terahertz on-chip antenna for a phased array system comprises: a radiation patch, a dielectric carrier, an isolation wall, a floor, a transmission feeder and a shielding body; the radiation patch is attached to the upper side of the dielectric carrier, the transmission feeder grows on the side of the radiation patch, the dielectric carrier is attached to the upper side of the isolation wall, the isolation wall grows on the upper side of the floor, the shielding body grows on the upper side of the isolation wall and is located on both sides of the transmission feeder; air is provided between the radiation patch, the dielectric carrier and the floor; the transmission feeder is connected to a port of a chip, the floor is connected to a ground terminal of the chip, an electromagnetic signal generated by the chip enters the antenna through the transmission feeder, and is then radiated to free space by the radiation patch.
[0007] Preferably, the radiation patch, the isolation wall, the floor, the transmission feeder, and the shielding body are all made of metal materials, and the dielectric carrier is a polytetrafluoroethylene-doped material.
[0008] Preferably, the radiation patch, the isolation wall, the floor, the transmission feeder, and the shielding body are all formed by growth through a quasi-additive process.
[0009] In the present invention, a high-gain terahertz on-chip antenna is realized through a quasi-additive process, and an air microstrip antenna with a metal structure is used to reduce transmission loss. At the same time, the metal structure can quickly dissipate internal heat, avoiding the performance degradation problem caused by heat accumulation, solving the technical problem of poor performance of existing terahertz on-chip antennas, and achieving the technical effect of improving the performance of terahertz on-chip antennas and achieving high gain and low loss. BRIEF DESCRIPTION OF THE DRAWINGS
[0010] Figure 1 is a schematic structural diagram of a high-gain terahertz on-chip antenna for a phased array system in an embodiment of the present invention;
[0011] Figure 2 It is a schematic diagram of a radiation patch and a transmission feed line of a high-gain terahertz on-chip antenna for a phased array system in an embodiment of the present invention;
[0012] Figure 3 Schematic diagram of a dielectric carrier of a high-gain terahertz on-chip antenna for a phased array system in an embodiment of the present invention;
[0013] Figure 4 Schematic diagram of a separation wall and a shielding body of a high-gain terahertz on-chip antenna for a phased array system in an embodiment of the present invention;
[0014] Figure 5 is a floor schematic diagram of a high-gain terahertz on-chip antenna for a phased array system in an embodiment of the present invention;
[0015] In the attached drawings, 1. radiation patch; 2. dielectric carrier; 3. isolation wall; 4. floor; 5. transmission feeder; 6. shielding body. DETAILED DESCRIPTION
[0016] The present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description and claims. It should be noted that the drawings are all in very simplified form and are not in precise proportions, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention.
[0017] It should be noted that, in order to clearly explain the content of the present invention, the present invention specifically cites multiple embodiments to further illustrate different implementations of the present invention, wherein the multiple embodiments are enumerated rather than exhaustive. In addition, for the sake of brevity of explanation, the contents mentioned in the previous embodiments are often omitted in the subsequent embodiments. Therefore, the contents not mentioned in the subsequent embodiments can refer to the previous embodiments accordingly.
[0018] Example 1
[0019] A high-gain terahertz on-chip antenna for a phased array system, comprising: a radiation patch, a dielectric carrier, an isolation wall, a floor, a transmission feeder and a shielding body;
[0020] The radiation patch is attached to the upper side of the dielectric carrier, the transmission feeder is extended on the side of the radiation patch, the dielectric carrier is attached to the upper side of the isolation wall, the isolation wall is extended on the upper side of the floor, the shielding body is extended on the upper side of the isolation wall and is located on both sides of the transmission feeder; there is air between the radiation patch, the dielectric carrier and the floor;
[0021] The transmission feeder is connected to the port of the chip, the floor is connected to the ground terminal of the chip, and the electromagnetic signal generated by the chip enters the antenna through the transmission feeder and is then radiated to the free space by the radiation patch.
[0022] As an optional implementation, the radiation patch, isolation wall, floor, transmission feeder, and shielding body are all made of metal materials, and the dielectric carrier is a polytetrafluoroethylene doped material.
[0023] As an optional implementation, the radiation patch, isolation wall, floor, transmission feeder, and shielding body are all formed by growth through a quasi-additive process.
[0024] As an optional implementation, the medium carrier and the radiation patch are fixed by adhesive bonding.
[0025] As an optional implementation, the radiation patch is a square structure with a size of 0.7 mm×0.7 mm and a thickness of 0.05 mm.
[0026] As an optional implementation, the medium carrier is an I-shaped structure, with the dimensions of the two arms being 0.25 mm×0.05 mm, the middle dimension being 0.15 mm×0.85 mm, and the thickness being 0.04 mm.
[0027] As an optional implementation, the isolation wall is a U-shaped structure with a U-shaped size of 1 mm×1.25 mm, a height of 0.31 mm, and a wall thickness of 0.1 mm.
[0028] As an optional implementation, the floor is a square structure with a size of 1.25 mm×1.25 mm and a thickness of 0.05 mm.
[0029] As an optional implementation, the transmission feeder is a rectangular strip structure with a size of 0.32 mm×0.08 mm and a thickness of 0.05 mm.
[0030] As an optional implementation, the shielding body is a rectangular structure with a size of 0.1 mm×0.1 mm and a thickness of 0.09 mm.
[0031] Specifically, the high-gain terahertz on-chip antenna for phased array systems is not limited to Figure 1 As shown, it includes: a radiation patch 1, a dielectric carrier 2, an isolation wall 3, a floor 4, a transmission feeder 5, and a shielding body 6.
[0032] The radiation patch 1 is attached to the upper side of the dielectric carrier 2, the transmission feeder 5 is extended on the side of the radiation patch 1, the dielectric carrier 2 is attached to the upper side of the isolation wall 3, the isolation wall 3 is extended on the upper side of the floor 4, and the shielding body 6 is extended on the upper side of the isolation wall 3 and is located on both sides of the transmission feeder 5. There is air between the radiation patch 1, the dielectric carrier 2 and the floor 4.
[0033] The radiation patch 1, the isolation wall 3, the floor 4, the transmission feeder 5, and the shielding body 6 are all made of copper materials, and the dielectric carrier 2 is a polytetrafluoroethylene doped material.
[0034] The radiation patch 1, the isolation wall 3, the floor 4, the transmission feeder 5, and the shielding body 6 are all directly grown by a similar additive process, and the medium carrier 2 and the radiation patch 1 are glued together.
[0035] The transmission feeder 5 can be directly connected to the port of the chip, and the antenna floor 4 can be directly connected to the ground of the chip. The transmission feeder 5 and the floor 4 are both made of metal copper materials, which can quickly conduct away the heat generated when the chip is working.
[0036] The antenna operating frequency band is not limited to 135 GHz-145 GHz, and the antenna working process is not limited to: the 140 GHz electromagnetic signal generated by the chip enters the antenna through the transmission feeder 5, and is then radiated to free space by the antenna's radiation patch 1.
[0037] The heat conduction process of the antenna is not limited to: the chip generates heat when working, one is to conduct it to the antenna radiation patch 1 through the transmission feeder 5, and the other is to conduct it to the isolation wall 3 through the floor 4. Both can quickly conduct the heat of the chip and dissipate it, avoiding heat accumulation when the chip works for a long time and affecting the performance.
[0038] Specifically, Figure 2 As shown, the radiation patch 1 is a square structure, the transmission feed line 5 is a rectangular strip structure, the radiation patch 1 has a size of 0.7 mm×0.7 mm and a thickness of 0.05 mm, and the transmission feed line 5 has a size of 0.32 mm×0.08 mm and a thickness of 0.05 mm.
[0039] like Figure 3 As shown, the medium carrier 2 is an I-shaped structure, the dimensions of the two arms of the medium carrier 2 are 0.25 mm×0.05 mm, the middle dimension is 0.15 mm×0.85 mm, and the thickness is 0.04 mm.
[0040] like Figure 4As shown, the isolation wall 3 is a U-shaped structure, and the shielding body 6 is a rectangular structure. The U-shaped size of the isolation wall 3 is 1mm×1.25mm, the height is 0.31mm, and the wall thickness is 0.1mm. The shielding body 6 has a size of 0.1mm×0.1mm and a thickness of 0.09mm.
[0041] like Figure 5 As shown, the metal floor 4 is a square structure, the size of the floor 4 is 1.25 mm×1.25 mm, and the thickness is 0.05 mm.
[0042] In this embodiment, the on-chip antenna is realized based on a quasi-additive process, which solves the problems of low gain and large transmission loss in traditional processes. At the same time, based on the metal structure design, the internal heat generated by the chip when it works for a long time can be quickly transferred to the antenna, solving the problem of heat dissipation caused by heat accumulation. The high-gain terahertz on-chip antenna in this embodiment can realize the transmission and reception of 140GHz electromagnetic signals, and the antenna gain can reach 7.7dBi. It can be applied to a variety of phased array antenna systems for communication and detection, and has good working performance in phased array antenna systems.
Claims
1. A high-gain terahertz on-chip antenna for a phased array system, characterized in that: include: Radiating patches, dielectric carriers, isolation walls, floors, transmission feeders and shields; The radiation patch is attached to the upper side of the dielectric carrier, the transmission feeder is extended on the side of the radiation patch, the dielectric carrier is attached to the upper side of the isolation wall, the isolation wall is extended on the upper side of the floor, the shielding body is extended on the upper side of the isolation wall and is located on both sides of the transmission feeder; there is air between the radiation patch, the dielectric carrier and the floor; The transmission feeder is connected to the port of the chip, the floor is connected to the ground terminal of the chip, and the electromagnetic signal generated by the chip enters the antenna through the transmission feeder and is then radiated to the free space by the radiation patch.
2. The high-gain terahertz on-chip antenna for a phased array system according to claim 1, characterized in that: The radiation patch, the isolation wall, the floor, the transmission feeder, and the shielding body are all made of metal materials, and the dielectric carrier is a polytetrafluoroethylene doped material.
3. The high-gain terahertz on-chip antenna for a phased array system according to claim 1, characterized in that: The radiation patch, the isolation wall, the floor, the transmission feeder, and the shielding body are all formed by growth through a quasi-additive process.
4. The high-gain terahertz on-chip antenna for a phased array system according to any one of claims 1 to 3, characterized in that: The medium carrier and the radiation patch are fixed by adhesive bonding.
5. The high-gain terahertz on-chip antenna for a phased array system according to any one of claims 1 to 3, characterized in that: The radiation patch is a square structure with a size of 0.7 mm×0.7 mm and a thickness of 0.05 mm.
6. The high-gain terahertz on-chip antenna for a phased array system according to any one of claims 1 to 3, characterized in that: The medium carrier is an I-shaped structure, with the dimensions of the two arms being 0.25 mm×0.05 mm, the middle dimension being 0.15 mm×0.85 mm, and the thickness being 0.04 mm.
7. The high-gain terahertz on-chip antenna for a phased array system according to any one of claims 1 to 3, characterized in that: The isolation wall is a U-shaped structure with a U-shaped size of 1 mm×1.25 mm, a height of 0.31 mm, and a wall thickness of 0.1 mm.
8. The high-gain terahertz on-chip antenna for a phased array system according to any one of claims 1 to 3, characterized in that: The floor is a square structure with a size of 1.25 mm×1.25 mm and a thickness of 0.05 mm.
9. The high-gain terahertz on-chip antenna for a phased array system according to any one of claims 1 to 3, characterized in that: The transmission feed line is a rectangular strip structure with a size of 0.32 mm×0.08 mm and a thickness of 0.05 mm.
10. The high-gain terahertz on-chip antenna for a phased array system according to any one of claims 1 to 3, characterized in that: The shielding body is a rectangular structure with a size of 0.1 mm×0.1 mm and a thickness of 0.09 mm.