Near-infrared perovskite laser and preparation method thereof

Abstract

The application provides a near-infrared perovskite laser and a preparation method thereof. The near-infrared perovskite laser comprises a substrate, a perovskite gain medium layer arranged on the substrate, and a microcrystalline structure formed on the perovskite gain medium layer, wherein the microcrystalline structure is a resonant cavity of the perovskite gain medium layer. The near-infrared perovskite laser provided by the application can realize light pumping under lasing at room temperature without an additional resonant cavity, greatly simplifies the device structure, and improves the integrability of the laser. Through the adjustment of components and the preparation process, the adjustment of the lasing peak can be realized, the adjustment precision is high, and the use requirements of multiple wavelengths can be met. The near-infrared perovskite laser can be prepared by using a full-solution method, the process is simple, and the cost is low.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of perovskite lasers, in particular to a near-infrared perovskite laser and a preparation method thereof. BACKGROUND

[0002] Metal halide perovskite materials have high fluorescence quantum efficiency, high light absorption coefficient, long carrier diffusion distance, adjustable band gap, and can be prepared by solution method, etc., and have great development potential in the field of optoelectronic devices. The efficiency of solar cells based on metal halide perovskite materials has exceeded 26%, which can be comparable to traditional silicon solar cells, and has become a new type of solar cell. In recent years, perovskite light-emitting diodes (LEDs) have also developed rapidly, and the external quantum efficiency of red and green devices has exceeded 25%, and the external quantum efficiency of blue LEDs has also exceeded 18%, showing great application potential in future lighting and full-color display fields. In contrast, the development of perovskite lasers is relatively slow, and the current research on perovskite lasers mainly focuses on the visible light range, especially the green light band, and there are few reports on the near-infrared wavelength range, especially the 860-910nm wavelength range.

[0003] Near-infrared solid-state lasers have important applications in laser communication, optical storage, optical information processing, etc. At present, near-infrared solid-state lasers are mainly based on III-V semiconductor materials, which usually need to be prepared by metal-organic chemical vapor deposition, molecular beam epitaxy, etc., which is high in cost, and it is difficult to achieve continuous tuning of the lasing peak. Therefore, it is urgent to develop near-infrared lasers that can be prepared by solution method, and the development of near-infrared perovskite lasers with adjustable wavelength has great significance. SUMMARY

[0004] Therefore, the embodiments of the present application provide a near-infrared perovskite laser and a preparation method thereof. The near-infrared perovskite laser can be prepared by solution method, does not need an external resonant cavity, has a simple process, and is adjustable in wavelength.

[0005] In one aspect, the embodiments of the present application provide a near-infrared perovskite laser, which includes: a substrate; a perovskite gain medium layer disposed on the substrate, and a microcrystalline structure formed on the perovskite gain medium layer, the microcrystalline structure being a resonant cavity of the perovskite gain medium layer.

[0006] In some embodiments, the microcrystalline structure includes a plurality of microcrystalline units, and the plurality of microcrystalline units are separated from each other, and the shape of the microcrystalline unit includes a leaf shape or a star shape.

[0007] In some embodiments, the excitation wavelength of the near-infrared perovskite laser is related to the composition of the perovskite gain medium layer.

[0008] In some embodiments, the composition of the perovskite gain medium layer includes A' y A1-y The excitation wavelength of the near-infrared perovskite laser is related to the material of A' in the composition of the perovskite gain medium layer, the material of A, and the value of y, wherein A' and A are two different organic cations, the size of A' is larger than that of A, and the value of y ranges from 0 to 1.

[0009] In some embodiments, the material of A' in the composition of the perovskite gain medium layer includes phenethylamine (PEA + ), p-fluorophenethylamine (p-F-PEA + ), m-fluorophenethylamine (m-F-PEA + ), 1-naphthylmethylamine (NMA + ), or butylamine (BA + ); the material of A in the composition of the perovskite gain medium layer includes methylamine (MA + ) or formamidinium (FA + ); and the value of y ranges from 0 to 0.6.

[0010] In some embodiments, the excitation wavelength of the near-infrared perovskite laser ranges from 860 nm to 910 nm.

[0011] In some embodiments, the substrate includes a rigid substrate or a flexible substrate.

[0012] In some embodiments, the near-infrared perovskite laser further includes an isolation layer disposed on the perovskite gain medium layer and covering the microcrystalline structure.

[0013] In some embodiments, the refractive index of the isolation layer ranges from 1.4 to 1.6.

[0014] Another aspect of the embodiments of the present application further provides a preparation method of a near-infrared perovskite laser, including: after spin-coating a perovskite solution on a pretreated substrate, performing a thermal annealing treatment to form a perovskite gain medium layer with a microcrystalline structure, wherein the microcrystalline structure is a resonant cavity of the perovskite gain medium layer.

[0015] The near-infrared perovskite laser and the preparation method thereof provided by the embodiments of the present application at least have the following beneficial effects:

[0016] (1) The near-infrared perovskite laser of the embodiments of the present application uses the microcrystalline structure of the perovskite gain medium layer as a resonant cavity, without using an external resonant cavity, so that lasing under optical pumping can be realized at room temperature, greatly simplifying the device structure and improving the integrability of the laser;

[0017] (2) The perovskite laser of the embodiments of the present application can realize adjustable lasing peaks in the 860-910 nm wavelength band through the regulation of the composition and the preparation process, with high adjustment accuracy, which can meet the use requirements of multiple wavelengths;

[0018] (3) The near-infrared perovskite laser of the embodiments of the present application can be prepared by a full solution method, avoiding the need for complex metal-organic chemical vapor deposition, molecular beam epitaxy and other methods for conventional near-infrared semiconductor lasers, and can significantly reduce the cost and complexity of the process. BRIEF DESCRIPTION OF DRAWINGS

[0019] The above and other objects, features and advantages of the present application will become more apparent from the following description of the embodiments of the present application taken with reference to the accompanying drawings, in which:

[0020] Figure 1 A structural diagram of a near-infrared perovskite laser according to some embodiments of the present application is schematically shown;

[0021] Figure 2 A structural diagram of a near-infrared perovskite laser according to some embodiments of the present application is schematically shown;

[0022] Figure 3 A flowchart of a preparation method of a near-infrared perovskite laser according to some embodiments of the present application is schematically shown;

[0023] Figure 4 An emission spectrum diagram of a near-infrared perovskite laser according to an embodiment of the present application is schematically shown;

[0024] Figure 5 An X-ray diffraction diagram of a perovskite gain medium (y=0.2) of a near-infrared perovskite laser according to an embodiment of the present application is schematically shown;

[0025] Figure 6 A scanning electron microscope image of a perovskite gain medium (y=0.2) of a near-infrared perovskite laser according to an embodiment of the present application is schematically shown. DETAILED DESCRIPTION

[0026] The embodiments are described below in detail with reference to the accompanying drawings, but the embodiments provided are not intended to limit the scope encompassed by the present application. In addition, the accompanying drawings are merely intended for illustration purposes and are not drawn to scale. For ease of understanding, the same elements will be denoted by the same reference numerals in the following description.

[0027] The terms "comprise", "include", "have" and the like as used herein are open-ended terms that also mean "comprising but not limited to".

[0028] Furthermore, directional terms such as "upper" and "lower" are used with reference to the orientation of the Figure being described. Thus, "upper" can be taken as being interchangeable with "lower", and when a layer or film or the like is referred to as being "on" another layer or film, this can mean that the layer or film is either directly on the other layer or film or intervening layers can also be present. Conversely, when a layer or film is referred to as being "directly on" another layer or film, then there are no intervening layers present.

[0029] To realize a low-cost, external-cavity-free, wavelength-tunable near-infrared laser, the present application provides a wavelength-tunable near-infrared perovskite laser and a preparation method thereof. The laser can be prepared by a full-solution method, does not need an external cavity, and has an excitation wavelength covering the near-infrared band of 860-910 nm and being tunable.

[0030] Please refer to Figure 1 , Figure 1 A structural diagram of a near-infrared perovskite laser 100 according to some embodiments of the present application is schematically shown. The near-infrared perovskite laser 100 can include a substrate 110 and a perovskite gain medium layer 120.

[0031] In some embodiments, the substrate 110 can be a rigid substrate. For example, it can be a quartz wafer or a silicon wafer. In some embodiments, the substrate 110 can be a flexible substrate. For example, it can be a substrate made of polydimethylsiloxane (PDMS), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or polyimide (PI), etc. A flexible thin-film laser prepared on a flexible substrate has great potential for application in manufacturing various sensors in water or biological solutions.

[0032] The substrate 110 is provided with the perovskite gain medium layer 120, and the perovskite gain medium layer 120 is formed with a microcrystal structure 121. In this context, a microcrystal refers to a micron-level crystal, which can be grown by controlling process parameters during preparation of the perovskite gain medium layer 120. The microcrystal structure 121 can serve as a resonant cavity of the perovskite gain medium layer 120. That is, the perovskite gain medium layer 120 can simultaneously serve as a gain medium and a resonant cavity of the near-infrared perovskite laser 100. In this way, the near-infrared perovskite laser 100 does not need to use an external resonant cavity, and can realize lasing under optical pumping at room temperature, greatly simplifying the device structure and improving the integrability of the laser.

[0033] It should be noted that, Figure 1The region of the microcrystalline structure 121 shown in FIG. 1 is merely an example and is not intended to limit the position of the microcrystalline structure 121. In fact, the microcrystalline structure 121 can be formed on the entire perovskite gain medium layer 120. That is, the perovskite gain medium layer 120 has a microcrystalline morphology, which can be grown when the perovskite gain medium layer 120 is prepared.

[0034] Please continue to refer to Figure 1 , Figure 1 A partial enlarged plan view of the microcrystalline structure 121 (in the dashed circle in FIG. 1) is shown in FIG. 2, which is equivalent to a view from above to below of FIG. 1. Figure 1 Figure 1

[0035] In the partial enlarged plan view in FIG. 1, the microcrystalline structure 121 can include a plurality of microcrystalline units 121a, 121b, which are separated from each other. Separated from each other means that there is a certain spacing between the microcrystalline units. The shape of the microcrystalline units 121a, 121b can be a leaf-like shape (such as the microcrystalline unit 121a) or a star shape such as a cross, a pentagram, a hexagon, etc. (the microcrystalline unit 121b). The shape of the microcrystalline unit refers to the surface morphology of the microcrystalline under an optical microscope or a scanning electron microscope. Understandably, Figure 1 The number, size and shape of the microcrystalline units shown in FIG. 1 are merely examples and are not intended to limit the number, size and shape of the microcrystalline units. Microcrystalline structures of different sizes and morphologies can provide different gain effects.

[0036] Perovskite generally refers to a class of compounds with the general formula ABX3. Typically, A refers to a monovalent cation, B refers to a divalent metal cation, and X refers to a halide anion. In embodiments of the present application, the excitation wavelength of the near-infrared perovskite laser 100 can be changed by changing the composition of the perovskite gain medium layer 120, i.e. by changing the composition and proportion of A, B and X in the conventional ABX3 structure to achieve different emission wavelengths.

[0037] In some embodiments, the composition of the perovskite gain medium layer 120 in the near-infrared perovskite laser 100 can be A' y A 1-y SnI3, wherein A' and A are two different organic cations, the size of A' is greater than A, and y has a value in the range of 0 to 1. A' y A 1-y A' in A y A 1-y A' corresponds to A in the conventional ABX3 structure, A' y A 1-y Sn in A y SnI3 corresponds to B in the conventional ABX3 structure, and A'​​y A 1-y The I (iodine) in SnI3 corresponds to the X in the traditional ABX3 structure. In some embodiments, A' y A 1-y The materials of A' in SnI3 include but are not limited to phenylethylamine (PEA + ), p-fluorophenylethylamine (pF-PEA + ), m-fluorophenylethylamine (mF-PEA + ), 1-naphthylmethylamine (NMA + ) or butylamine (BA + );A' y A 1-y The materials A in SnI3 include methylamine (MA + ) or formamidine (FA + ); the value range of y can be further set to 0~0.6, where y can be equal to 0 or 0.6. For example, A' y A 1-y SnI3 can be ASnI3 (y=0), A' 0.2 A 0.8 SnI3(y=0.2)、A' 0.6 A 0.4 SnI3 (y=0.6), etc. In this embodiment, by changing A' y A 1-y The material of A', the material of A and the value of y in SnI3 can regulate the band gap of the perovskite, thereby realizing the regulation of the excitation wavelength of the near-infrared perovskite laser 100. Specifically, the excitation wavelength of the near-infrared perovskite laser 100 can be regulated between 860 nm and 910 nm, with an adjustment accuracy of less than 5 nm, and the quality factor of the laser is greater than 1000.

[0038] As an example, A' y A 1-y A' in SnI3 can be PEA + , A can be FA + , y can be 0.2, then the component of the perovskite gain medium layer 120 can be PEA 0.2 FA 0.8 SnI3, 20% PEA + and 80% of FA + That is, the organic cation A in the traditional ABX3 structure is equivalent to containing PEA 0.2 FA 0.8 20% PEA in SnI3 + and 80% of FA + PEA +The introduction of the same-sized cations can reduce the perovskite from a three-dimensional (3D) structure to a quasi-two-dimensional structure, which is a mixture of two-dimensional (2D) and three-dimensional perovskite phases. The presence of the 2D phase on the surface of the perovskite particles acts as a barrier, effectively preventing the entry of oxygen and water molecules and preventing the discharge of decomposition products, thereby improving the long-term stability of the perovskite thin film.A' y A 1-y The use of Sn (tin) as metal B in the traditional ABX3 structure in SnI3 can narrow the band gap of the metal halide perovskite material, red-shift the emission peak, and achieve near-infrared emission. A perovskite laser in the near-infrared waveband of more than 860 nm can be obtained, which is difficult to achieve with conventional lead (Pb)-based metal halide perovskite materials.

[0039] Please refer to Figure 2 , Figure 2 A structure diagram of a near-infrared perovskite laser 200 according to some embodiments of the present application is schematically shown. Figure 1 and Figure 2 In the above, the same elements are given the same reference numerals. The main difference between the near-infrared perovskite laser 200 and the near-infrared perovskite laser 100 is that the perovskite gain medium layer 120 is provided with an isolation layer 130, which covers the microcrystalline structure (not shown in Figure 2 ).

[0040] In an oxygen-containing environment, A' y A 1-y Sn 2+ in SnI3 is extremely easy to be oxidized to Sn 4+ , leaving unwanted Sn 2+ vacancies, which become non-radiative recombination centers and quench radiation, greatly degrading the luminescent performance of the perovskite thin film and device. The isolation layer 130 can isolate the perovskite layer from water, oxygen, and external solvent atmosphere, significantly improving the stability of the Sn-based perovskite thin film. In some embodiments, the refractive index of the isolation layer 130 ranges from 1.4 to 1.6, and the transmittance of the 800 nm-1000 nm waveband is greater than 97%. As an example, the isolation layer 130 can be polymethyl methacrylate or NOA ultraviolet curing glue, which has high transmittance and can be prepared by a solution method with simple process and without high-temperature treatment, and will not damage the perovskite layer.

[0041] Please refer to Figure 3 , Figure 3 A flowchart of a preparation method of a near-infrared perovskite laser according to some embodiments of the present application is schematically shown. The preparation method of the near-infrared perovskite laser can include operation S310.

[0042] In operation S310, after spin-coating the perovskite solution on the pretreated substrate 110, a thermal annealing process is performed to form the perovskite gain medium layer 120 with the microcrystalline structure 121. The microcrystalline structure 121 is the resonant cavity of the perovskite gain medium layer 120.

[0043] Specifically, the substrate 110 can be a quartz wafer, a silicon wafer, polydimethylsiloxane (PDMS), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or polyimide (PI). The pretreatment can be a cleaning process. For example, the substrate 110 can be subjected to ultraviolet ozone treatment for 10-30 min to oxidize and remove grease and organic matter on the surface of the substrate 110 by ultraviolet light and ozone, so as to achieve the effect of cleaning; at the same time, the hydrophilic and hydrophobic properties of the surface of the substrate 110 can be changed to facilitate the spin-coating of the solution. The perovskite solution has A' y A 1-y SnI3 component. The meanings and materials of A' and A have been described above and will not be repeated here. The solvent of the perovskite solution can be a mixed solution of dimethyl sulfoxide (DMSO) and N,N-dimethylformamide (DMF), and the concentration of the perovskite solution is 0.2-1 M. The annealing temperature of the thermal annealing process can be 60-80 degrees Celsius, and the annealing time is 5-15 min. The above-mentioned polar solvent can be removed by the thermal annealing drying process, and the perovskite material is oversaturated in the solvent removal process, so as to nucleate and grow, so as to form the perovskite gain medium layer 120 with the microcrystalline structure 121.

[0044] It should be emphasized that the preparation method of the near-infrared perovskite laser provided by the embodiments of the present application does not need to drop a reverse solvent on the substrate during the spin-coating of the perovskite solution. In the conventional preparation of perovskite thin films, chlorobenzene, toluene, or other solvents are usually dropped on the substrate as reverse solvents during the spin-coating of the perovskite precursor solution, but the present application does not use a reverse solvent, which can slow down the nucleation and growth of perovskite, so as to form a discrete microcrystalline structure. This specific crystal morphology can enable the near-infrared perovskite laser provided by the embodiments of the present application to realize lasing without an external resonant cavity.

[0045] In some embodiments, by implementing the preparation method provided in operation S310, the near-infrared perovskite laser 100 shown in FIG. 1 can be prepared. Figure 1 In some embodiments, on the basis of operation S310, the isolation layer 130 can be further prepared to obtain the near-infrared perovskite laser 200 shown in FIG. 2. Figure 2

[0046] Specifically, the isolation layer solution can be spin-coated on the perovskite gain medium layer 120 and dried to obtain the isolation layer 130.

[0047] ​For example, a chlorobenzene solution of polymethyl methacrylate or a NOA ultraviolet curing adhesive or the like can be spin-coated on the perovskite gain medium 120 prepared in operation S310 to form an isolation layer 130 after drying to obtain the near-infrared perovskite laser 200. The drying temperature is 40-80 degrees Celsius, and the time is 3-10 minutes. The refractive index of the isolation layer 130 is 1.4-1.6, and the transmittance in the 800 nm-1000 nm band is greater than 97%.

[0048] Embodiments

[0049] (1) Preparation of perovskite precursor solution

[0050] Prepare 1 mL of PEA y FA 1-y SnI3 perovskite solution, solvent is 800 μL DMF+200 μL DMSO, concentration is 0.8M. The molar ratio of PEAI, FAI, SnI2, SnF2 is 0:1:1:0.075 (y=0) or 0.1:0.9:1:0.075 (y=0.1) or 0.15:0.85:1:0.075 (y=0.15) or 0.2:0.8:1:0.075 (y=0.2) or 0.3:0.7:1:0.075 (y=0.3) or 0.4:0.6:1:0.075 (y=0.4), stirring and dissolving to obtain a perovskite precursor solution.

[0051] (2) Preparation of perovskite laser

[0052] Ultrasonically clean the quartz substrate 110 with a detergent water, deionized water, acetone and isopropanol solution for 20 minutes, and then dry with nitrogen. Put it into the ultraviolet ozone cleaning machine and process for 15 minutes.

[0053] Move the substrate 110 into the glove box, spin-coat the perovskite precursor solution at a speed of 1000 rpm for 10 s+5000 rpm for 30 s, and then place the sample on the hot stage and anneal at 70 degrees Celsius for 10 minutes to form a perovskite gain medium layer 120 with a microcrystalline structure 121, i.e. to obtain a perovskite laser 100.

[0054] After annealing, spin-coat a chlorobenzene solution of polymethyl methacrylate (concentration is 20 mg / mL), and then dry at 40 degrees Celsius for 3 minutes to form an isolation layer 130, and then the preparation of the perovskite laser 200 can be completed.

[0055] See Figure 4 , Figure 4 The emission spectrum of the near-infrared perovskite laser according to the embodiment of the application is schematically shown.

[0056] Figure 4The horizontal coordinate represents wavelength, in nm, and the vertical coordinate represents normalized intensity, in a.u. It can be seen that the near-infrared perovskite laser provided by the embodiment of the present application obtains a series of lasing peaks in the wavelength range of 860-910 nm, the peak position can be adjusted in this range, and the adjustment accuracy is less than 5 nm. The half-width of the lasing peak can be obtained from the lasing spectrum, and the quality factor of the laser can be calculated. The maximum quality factor of the near-infrared perovskite laser is 1251. Please refer to Figure 5 , Figure 5 The X-ray diffraction pattern (XRD) of the perovskite gain medium (y=0.2) of the near-infrared perovskite laser according to the embodiment of the present application is schematically shown.

[0057] Figure 5 The horizontal coordinate represents degree, and the vertical coordinate represents intensity, in a.u. The A y A 1-y The y of SnI3 is 0.2. It can be seen that the near-infrared perovskite laser provided by the embodiment of the present application has good crystallinity of the perovskite gain medium.

[0058] Please refer to Figure 6 , Figure 6 The scanning electron microscope image (SEM) of the perovskite gain medium (y=0.2) of the near-infrared perovskite laser according to the embodiment of the present application is schematically shown.

[0059] The A y A 1-y The y of SnI3 is 0.2. It can be seen that the perovskite gain medium forms a large number of leaf-shaped or star-shaped microcrystals. These microcrystals spontaneously form a resonant cavity without the need for an external resonant cavity, and different sizes and morphologies of the microcrystal regions can provide different gain effects.

[0060] So far, the near-infrared perovskite laser and the preparation method thereof have been introduced. According to the embodiments, the near-infrared perovskite laser of the present application can be prepared by a full-solution method, avoiding the need for complex metal-organic chemical vapor deposition, molecular beam epitaxy and other methods for conventional near-infrared semiconductor lasers, which can significantly reduce the cost and complexity of the process; through the adjustment of the components and the preparation process, the lasing peak can be adjusted in the wavelength range of 860-910 nm, and the adjustment accuracy is high, which can meet the use requirements of multiple wavelengths; the perovskite laser prepared by the present application does not need to use an external resonant cavity, and can realize lasing under optical pumping at room temperature, greatly simplifying the device structure and improving the integrability of the laser.

[0061] In summary, although the present application has been disclosed with examples as above, it is not intended to limit the present application. Those skilled in the art to which the present application pertains, various modifications and improvements can be made without departing from the spirit and scope of the present application. Therefore, the scope of protection of the present application should be defined by the appended claims.

Claims

1. A near-infrared perovskite laser, characterized by, The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The microcrystalline structure comprises a plurality of microcrystalline units, the plurality of microcrystalline units are separated from each other, the shape of the microcrystalline unit comprises a leaf shape or a star shape, and the component of the perovskite gain medium layer comprises A' y A 1-y SnI3, wherein the excitation wavelength of the near-infrared perovskite laser is related to the material of A' and the material of A in the component of the perovskite gain medium layer and the value of y, A' and A are two different organic cations, the size of A' is greater than that of A, and the value of y ranges from 0 to 1.

2. The near-infrared perovskite laser of claim 1, wherein, The material of A' in the component of the perovskite gain medium layer includes phenethylamine (PEA + ), p-fluorophenethylamine (p-F-PEA + ), m-fluorophenethylamine (m-F-PEA + ), 1-naphthylmethylamine (NMA + ), or butylamine (BA + ); The material of A in the component of the perovskite gain medium layer includes methylamine (MA + ) or formamidinium (FA + ). The application relates to a near-infrared perovskite laser device.

3. The near-infrared perovskite laser of claim 2, wherein, The application relates to a near-infrared perovskite laser device.

4. The near-infrared perovskite laser of claim 1, wherein, The application relates to a near-infrared perovskite laser device.

5. The near-infrared perovskite laser of claim 1, wherein, The application relates to a near-infrared perovskite laser device.

6. A method of producing a near-infrared perovskite laser as claimed in any one of claims 1-5, characterized in that, The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates to a near-infrared perovskite laser device. The application relates The microcrystal structure is a resonant cavity of the perovskite gain medium layer, the microcrystal structure comprises a plurality of microcrystal units, the plurality of microcrystal units are separated from each other, a shape of the microcrystal unit comprises a leaf shape or a star shape, and components of the perovskite gain medium layer comprise A' y A 1-y SnI3, an excitation wavelength of the near-infrared perovskite laser is related to a material of A' and a material of A in the components of the perovskite gain medium layer and a value of y, A' and A are two different organic cations, a size of A' is greater than that of A, and the value of y ranges from 0 to 1.

Images