Semiconductor laser system based on fast coupling

Abstract

The application discloses a semiconductor laser system based on fast coupling, and particularly relates to the technical field of semiconductor lasers, and relates to the following technical scheme: connection matching information of a semiconductor laser and an external optical system, current frequency fluctuation information of a driving circuit, heat dissipation efficiency information of a heat dissipation system, and output wavelength information of the semiconductor laser are acquired, a fast coupling efficiency influence evaluation model is constructed, a fast coupling efficiency influence index is generated, whether there is a potential operation hidden danger in an existing fast coupling semiconductor laser system is evaluated, potential problems existing in the existing fast coupling semiconductor laser system are intelligently perceived, and decision early warning is performed according to the degree of the operation hidden danger existing in the fast coupling semiconductor laser system, early warning prompt is provided, unnecessary shutdown is avoided, production interruption caused by equipment failure is reduced, overall work efficiency is improved, resource allocation is optimized, and coupling efficiency is improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor laser technology, and more specifically, to semiconductor laser systems based on rapid coupling. Background Technology

[0002] Semiconductor laser systems based on rapid coupling are a crucial technological foundation for modern optical communication, lidar, precision measurement, and other fields. Due to their miniaturization, high efficiency, and tunability, semiconductor lasers have become a core component of laser systems. Through current injection and carrier recombination in semiconductor materials, semiconductor lasers can achieve laser output, exhibiting superior power efficiency, optical bandwidth, and tunability compared to traditional lasers. They are particularly suitable for applications requiring high frequency, high power, and rapid response.

[0003] Despite the many advantages of semiconductor lasers, the realization of fast coupling technology still faces a series of technical challenges. For example, the stability of the connection between the semiconductor laser and the external optical system, the fluctuation of the bandwidth of the electronic drive circuit, the decrease in the heat dissipation efficiency of the heat dissipation system, and the degree of wavelength drift of the semiconductor laser all lead to a decrease in coupling efficiency to varying degrees. Therefore, how to intelligently monitor and perceive the above-mentioned hidden problems remains an important challenge that needs to be addressed in fast coupling semiconductor laser systems. Summary of the Invention

[0004] To overcome the aforementioned deficiencies of the prior art, embodiments of the present invention provide a semiconductor laser system based on rapid coupling to solve the problems mentioned in the background art.

[0005] To achieve the above objectives, the present invention provides the following technical solution:

[0006] The semiconductor laser system based on rapid coupling includes a connection stabilization module, a circuit fluctuation module, a heat dissipation efficiency monitoring module, a wavelength drift module, a comprehensive evaluation module, and a hidden danger early warning module.

[0007] The connection stabilization module is used to obtain the connection matching information between the semiconductor laser and the external optical system, and to obtain the beam angle connection matching deviation coefficient based on the connection matching information.

[0008] The circuit fluctuation module is used to acquire current frequency fluctuation information of the semiconductor laser driver circuit and to obtain the current frequency fluctuation index based on the current frequency fluctuation information.

[0009] The heat dissipation efficiency monitoring module is used to acquire heat dissipation efficiency information of the heat dissipation system and obtain a heat dissipation efficiency decline trend index based on the heat dissipation efficiency information.

[0010] The wavelength drift module is used to acquire the output wavelength information of the semiconductor laser and obtain the output wavelength drift coefficient based on the output wavelength information.

[0011] The comprehensive evaluation module is used to construct a fast coupling efficiency impact assessment model based on beam angle connection matching deviation coefficient, current frequency fluctuation index, heat dissipation efficiency decline trend index, and output wavelength drift coefficient, generate a fast coupling efficiency impact index, and assess whether there are potential operational hazards in the existing fast coupling semiconductor laser system.

[0012] The hazard warning module is used to make decisions and provide early warnings based on the degree of operational hazards present in the fast-coupled semiconductor laser system.

[0013] In a preferred embodiment, by acquiring the connection matching information between the semiconductor laser and the external optical system, the deviation between the incident angle of the semiconductor laser output beam and the docking angle of the input end of the external optical system is analyzed, and the beam angle connection matching deviation coefficient is obtained to measure the degree of deviation between the incident angle of the semiconductor laser output beam and the docking angle of the input end of the external optical system.

[0014] The logic for obtaining the beam angle connection matching deviation coefficient is as follows:

[0015] Obtain the incident angle of the output beam of a semiconductor laser and the optimal receiving angle of the external optical system receiving surface. Calculate the angle deviation Expressions such as ;

[0016] Calculate the mode matching degree between the output beam mode of the semiconductor laser and the receiving mode of the external optical system. The expression is as follows ,in This represents the output beam mode function of a semiconductor laser. This represents the receiving mode function of the external optical system. Represents angular coordinates. yes Complex conjugate, radial coordinates from arrive Represents the region from the center of the beam to infinity, angular coordinates. from arrive Represents a complete circle;

[0017] Calculate the beam angle connection matching deviation coefficient The expression is as follows .

[0018] In a preferred embodiment, by acquiring the current frequency fluctuation information of the semiconductor laser driving circuit, the fluctuation of the current frequency of the semiconductor laser driving circuit is analyzed, and a current frequency fluctuation index is obtained to measure the degree of fluctuation of the current frequency of the semiconductor laser driving circuit.

[0019] The logic for obtaining the current frequency fluctuation index is as follows:

[0020] Acquire time-domain current signal data of semiconductor laser driver circuit within a preset fixed time period T. ;

[0021] Selecting the mother wavelet function to compute different scales and time location wavelet coefficients The expression is as follows ,in For the complex conjugate of the mother wavelet function, scale Used to control the frequency resolution and time position of the wavelet. Used to control time translation;

[0022] Calculate wavelet energy spectrum The expression is as follows ;

[0023] Calculate the mean of the energy spectrum The expression is as follows ,in Indicates the i-th scale The wavelet energy spectrum below, , For positive integers; calculate the standard deviation of the energy spectrum. The expression is as follows ;

[0024] Calculate the current frequency fluctuation index The expression is as follows .

[0025] In a preferred embodiment, by acquiring the heat dissipation efficiency information of the heat dissipation system, analyzing the heat dissipation efficiency of the heat dissipation system, and obtaining the heat dissipation efficiency decline trend index, the decline trend of the heat dissipation efficiency of the heat dissipation system is measured.

[0026] The logic for obtaining the heat dissipation efficiency decline trend index is as follows:

[0027] The heat flux index is calculated by obtaining the laser's operating temperature, ambient temperature, thermal conductivity of the cooling system, effective area of ​​the heat sink, fan speed, and airflow velocity. The expression is as follows: ,in Indicates the heat flux index. This indicates the operating temperature of the laser. Indicates ambient temperature. Indicates the thermal conductivity of the heat dissipation system. Indicates the effective area of ​​the heat sink. Indicates fan speed. Indicates air velocity;

[0028] The heat flux index at different times is calculated within a preset fixed time period T, and a heat flux index decay model is constructed. The expression used in the heat flux index decay model is as follows: ,in This represents the heat flux index calculated at time t. This represents the initial heat flux index. Indicates the attenuation factor;

[0029] Calculate the heat dissipation efficiency decline trend index The expression is as follows ,in The mean heat flux index is expressed as follows: ,in The value range is from 0 to T.

[0030] In a preferred embodiment, by acquiring the output wavelength information of the semiconductor laser, the abnormal drift of the output wavelength of the semiconductor laser is analyzed, and the output wavelength drift coefficient is obtained to measure the degree of abnormality of the output wavelength drift of the semiconductor laser.

[0031] The logic for obtaining the output wavelength drift coefficient is as follows:

[0032] Obtain the output wavelength value of the semiconductor laser and calculate its output wavelength shift compared to the expected received wavelength value of the external optical system. The expression is as follows ,in This indicates the output wavelength value of the semiconductor laser. This indicates the expected receiving wavelength value of the external optical system;

[0033] Calculate the skewness of wavelength drift The expression is as follows: ,in This represents the output wavelength drift between the nth output wavelength value of the semiconductor laser and the expected received wavelength value of the external optical system within a preset fixed time period T, where n = {1, 2, ..., N}, and N is a positive integer; The mean value of the output wavelength shift is expressed by the following formula: , The standard deviation of the output wavelength drift is expressed by the following formula: ;

[0034] Calculate the kurtosis of wavelength shift The expression is as follows ;

[0035] Calculate the output wavelength drift coefficient The expression is as follows ,in This represents the maximum value acquisition function, used to obtain the maximum value of the output wavelength drift calculated within a fixed time period T.

[0036] In a preferred embodiment, a fast coupling efficiency impact assessment model is constructed based on the beam angle connection matching deviation coefficient, current frequency fluctuation index, heat dissipation efficiency decline trend index, and output wavelength drift coefficient, thereby generating a fast coupling efficiency impact index. The model is based on the following formula: In the formula , , , These represent the preset proportional coefficients for the beam angle connection matching deviation coefficient, current frequency fluctuation index, heat dissipation efficiency decline trend index, and output wavelength drift coefficient, respectively. , , , All are greater than 0.

[0037] In a preferred embodiment, the fast coupling efficiency impact index is compared with a preset fast coupling efficiency impact index threshold to assess whether there are potential operational risks in the existing fast coupling semiconductor laser system, as follows:

[0038] If the impact exponent of rapid coupling efficiency is greater than the threshold of the impact exponent of rapid coupling efficiency, then a potential operational hazard signal is generated.

[0039] If the rapid coupling efficiency impact exponent is less than or equal to the rapid coupling efficiency impact exponent threshold, then a steady-state operating signal is generated.

[0040] In a preferred embodiment, the potential hazards of the existing fast-coupled semiconductor laser system are assessed according to the fast coupling efficiency impact assessment model within a fixed time period T, and the fast coupling efficiency impact index corresponding to the latent signal of the generated operational hazard is obtained and added to the anomaly detection data analysis set. The anomaly detection data analysis set is marked as... , The rapid coupling efficiency impact index represents the j-th generation of potential operational hazards signal, where j={1,2,...,M} and M is a positive integer;

[0041] The anomaly detection value is used to calculate the impact index of fast coupling efficiency in the anomaly detection data analysis set. The expression is as follows: ,in The mean of the exponent representing the impact of fast coupling efficiency on the anomaly detection data analysis set is calculated as follows: ; The standard deviation of the index representing the impact of fast coupling efficiency on the anomaly detection data analysis set is expressed as follows: ;

[0042] The abnormal detection values ​​of the rapid coupling efficiency impact index in the abnormal detection data analysis set are compared with the preset abnormal detection value threshold to make decision-making and early warning of the degree of operational risks in the rapid coupling semiconductor laser system, as follows:

[0043] If the anomaly detection value of the fast coupling efficiency impact index in the anomaly detection data analysis set is greater than the anomaly detection value threshold, an early warning signal is generated; if the anomaly detection value of the fast coupling efficiency impact index in the anomaly detection data analysis set is less than or equal to the anomaly detection value threshold, no early warning signal needs to be generated.

[0044] The technical effects and advantages of this invention are as follows:

[0045] 1. This invention acquires connection matching information between the semiconductor laser and the external optical system, current frequency fluctuation information of the driving circuit, heat dissipation efficiency information of the heat dissipation system, and output wavelength information of the semiconductor laser. It then constructs a rapid coupling efficiency impact assessment model, generates a rapid coupling efficiency impact index, assesses whether there are potential operational hazards in existing rapid coupling semiconductor laser systems, intelligently perceives potential problems in existing rapid coupling semiconductor laser systems, and makes decision-making and early warnings based on the degree of operational hazards in rapid coupling semiconductor laser systems. This provides early warning prompts, avoids unnecessary downtime, reduces production interruptions caused by equipment failures, improves overall work efficiency, optimizes resource allocation, and improves coupling efficiency. Attached Figure Description

[0046] To facilitate understanding by those skilled in the art, the present invention will be further described below with reference to the accompanying drawings;

[0047] Figure 1 This is a flowchart of the system according to an embodiment of the present invention. Detailed Implementation

[0048] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0049] Example: The present invention provides, as follows Figure 1 The semiconductor laser system based on fast coupling shown includes a connection stabilization module, a circuit fluctuation module, a heat dissipation efficiency monitoring module, a wavelength drift module, a comprehensive evaluation module, and a hidden danger early warning module.

[0050] The connection stabilization module is used to obtain the connection matching information between the semiconductor laser and the external optical system, and to obtain the beam angle connection matching deviation coefficient based on the connection matching information.

[0051] The circuit fluctuation module is used to acquire current frequency fluctuation information of the semiconductor laser driver circuit and to obtain the current frequency fluctuation index based on the current frequency fluctuation information.

[0052] The heat dissipation efficiency monitoring module is used to acquire heat dissipation efficiency information of the heat dissipation system and obtain a heat dissipation efficiency decline trend index based on the heat dissipation efficiency information.

[0053] The wavelength drift module is used to acquire the output wavelength information of the semiconductor laser and obtain the output wavelength drift coefficient based on the output wavelength information.

[0054] The comprehensive evaluation module is used to construct a fast coupling efficiency impact assessment model based on beam angle connection matching deviation coefficient, current frequency fluctuation index, heat dissipation efficiency decline trend index, and output wavelength drift coefficient, generate a fast coupling efficiency impact index, and assess whether there are potential operational hazards in the existing fast coupling semiconductor laser system.

[0055] The hazard warning module is used to make decisions and provide early warnings based on the degree of operational hazards present in the fast-coupled semiconductor laser system.

[0056] The connection stabilization module is used to obtain the connection matching information between the semiconductor laser and the external optical system, and to obtain the beam angle connection matching deviation coefficient based on the connection matching information.

[0057] The beam angle connection matching deviation coefficient measures the degree of matching between the output beam of a semiconductor laser and the input of an external optical system. Specifically, it measures the deviation between the incident angle of the output beam and the docking angle of the input of the external optical system. It reflects the transmission efficiency and stability of the beam from the laser to the optical system and is a key indicator affecting coupling efficiency and system stability. It describes the deviation between the incident angle of the output beam and the receiving surface of the external optical system (such as the core of an optical fiber or waveguide). Generally, the closer the beam incident angle is to the optimal receiving angle of the optical system (i.e., the design target angle), the higher the coupling efficiency and the better the optical transmission performance of the system.

[0058] A large beam angle connection mismatch coefficient can lead to a decrease in the energy transmission efficiency of the beam in the optical fiber or waveguide, increase optical losses, and may even cause the beam to fail to transmit effectively. A large beam angle connection mismatch coefficient may also cause signal distortion, reducing the stability and accuracy of existing fast-coupled semiconductor laser systems, meaning that the probability of operational problems in existing fast-coupled semiconductor laser systems is greater. Conversely, a smaller beam angle connection mismatch coefficient indicates that the existing fast-coupled semiconductor laser system is more stable in operation. By calculating the beam angle connection mismatch coefficient, we can effectively assess the problem of reduced coupling efficiency caused by connection mismatch failure between the semiconductor laser and the external optical system, optimize the optical system configuration, reduce optical losses caused by poor beam matching, and improve the stability and performance of the entire system.

[0059] Therefore, by obtaining the connection matching information between the semiconductor laser and the external optical system, the deviation between the incident angle of the semiconductor laser output beam and the docking angle of the input end of the external optical system is analyzed, and the beam angle connection matching deviation coefficient is obtained to measure the degree of deviation between the incident angle of the semiconductor laser output beam and the docking angle of the input end of the external optical system.

[0060] The logic for obtaining the beam angle connection matching deviation coefficient is as follows:

[0061] Obtain the incident angle of the output beam of a semiconductor laser and the optimal receiving angle of the external optical system receiving surface. Calculate the angle deviation The expression is as follows ;

[0062] It should be noted that the actual incident angle of the output beam of a semiconductor laser can be measured using high-precision optical sensors (such as laser beam analyzers, interferometers, or photodiode arrays).

[0063] Calculate the mode matching degree between the output beam mode of the semiconductor laser and the receiving mode of the external optical system. The expression is as follows ,in This represents the mode function of the output beam of a semiconductor laser, used to describe the electric field distribution of the output beam. This represents the receiving mode function of the external optical system, used to describe the electric field distribution of the external optical system. Represents radial coordinates, Represents angular coordinates. yes Complex conjugate, radial coordinates from arrive Represents the region from the center of the beam to infinity, angular coordinates. from arrive Represents a complete circle;

[0064] The mode matching degree between the output beam mode of a semiconductor laser and the receiving mode of an external optical system reflects the degree of matching between the output beam of the semiconductor laser and the external optical system. The higher the mode matching degree, the better the coupling efficiency.

[0065] Calculate the beam angle connection matching deviation coefficient The expression is as follows ;

[0066] It should be noted that before calculating the beam angle connection matching deviation coefficient, it is necessary to ensure that the angle deviation, the mode matching degree of the semiconductor laser output beam mode and the external optical system receiving mode have been normalized. Commonly used normalization methods include Min-Max normalization, Z-Score normalization, etc.

[0067] The circuit fluctuation module is used to acquire current frequency fluctuation information of the semiconductor laser driver circuit and to obtain the current frequency fluctuation index based on the current frequency fluctuation information.

[0068] The current frequency fluctuation index is used to measure the stability of the current frequency in a semiconductor laser driver circuit. It reflects the impact of the fluctuation amplitude and frequency of the current in the semiconductor laser driver circuit on the laser output performance. It is directly related to the stability of the laser output and the overall reliability of the system. A stable current frequency can ensure the stability of the intensity and wavelength of the laser output light, while large current frequency fluctuations can lead to unstable optical output power, increased noise, and even spectral broadening, thereby reducing the overall performance of the system.

[0069] A high current frequency fluctuation index indicates that the current frequency of the semiconductor laser driver circuit fluctuates greatly, which may lead to fluctuations in the laser output power, increased noise, and even spectral instability, suggesting potential operational risks in the fast-coupled semiconductor laser system. A low current frequency fluctuation index indicates that the current frequency of the semiconductor laser driver circuit fluctuates less, the driving current is stable, the laser output light intensity and wavelength are stable, and the fast-coupled semiconductor laser system performs well.

[0070] Therefore, by acquiring the current frequency fluctuation information of the semiconductor laser driver circuit, the fluctuation of the current frequency of the semiconductor laser driver circuit is analyzed, and the current frequency fluctuation index is obtained to measure the degree of fluctuation of the current frequency of the semiconductor laser driver circuit.

[0071] The logic for obtaining the current frequency fluctuation index is as follows:

[0072] Acquire time-domain current signal data of semiconductor laser driver circuit within a preset fixed time period T. ;

[0073] Selecting the mother wavelet function to compute different scales and time location wavelet coefficients The expression is as follows ,in For the complex conjugate of the mother wavelet function, scale Used to control the frequency resolution and time position of the wavelet. Used to control time translation;

[0074] It should be noted that common mother wavelet functions include Morlet wavelet, Daubechies wavelet, etc., which can be selected by those skilled in the art according to the actual situation;

[0075] In an optional example, the mother wavelet function The complex form of can be expressed as ,in and Represent the mother wavelet function respectively The real and imaginary parts, If the imaginary unit is represented, then the complex conjugate of the mother wavelet function... It can be represented as ;

[0076] Calculate wavelet energy spectrum The expression is as follows ;

[0077] Calculate the mean of the energy spectrum The expression is as follows ,in Indicates the i-th scale The wavelet energy spectrum below, , For positive integers; calculate the standard deviation of the energy spectrum. The expression is as follows ;

[0078] Calculate the current frequency fluctuation index The expression is as follows ;

[0079] The heat dissipation efficiency monitoring module is used to acquire heat dissipation efficiency information of the heat dissipation system and obtain a heat dissipation efficiency decline trend index based on the heat dissipation efficiency information.

[0080] The heat dissipation efficiency decline trend index is used to measure whether there is an abnormal decline trend in the heat dissipation efficiency of the laser heat dissipation system and to reflect the degree of this change. The decline in heat dissipation efficiency directly affects the operating temperature of the laser. If heat dissipation is poor, the laser temperature will rise, which may lead to output power fluctuations, decreased stability, or even system overheating and failure. By calculating the heat dissipation efficiency decline trend index, the decline trend of heat dissipation efficiency can be detected and quantified in a timely manner, ensuring the output stability of the laser, improving coupling efficiency, providing early warning of potential heat dissipation problems, and improving the stability, performance and lifespan of the laser and heat dissipation system. In this way, the reliability of the laser system can be improved, operating costs can be reduced, equipment lifespan can be extended, and product competitiveness can be enhanced.

[0081] A higher heat dissipation efficiency decline trend index indicates that there may be potential heat dissipation problems in the laser heat dissipation system, which increases the probability of potential operational hazards in the fast-coupled semiconductor laser system. Conversely, a lower heat dissipation efficiency decline trend index indicates that the heat dissipation efficiency of the laser heat dissipation system is stable and efficient, and thus has a negligible impact on the fast-coupled semiconductor laser system.

[0082] Therefore, by obtaining information on the heat dissipation efficiency of the heat dissipation system, analyzing the heat dissipation efficiency of the heat dissipation system, and obtaining the heat dissipation efficiency decline trend index, the decline trend of the heat dissipation efficiency of the heat dissipation system can be measured.

[0083] The logic for obtaining the heat dissipation efficiency decline trend index is as follows:

[0084] The heat flux index is calculated by obtaining the laser's operating temperature, ambient temperature, thermal conductivity of the cooling system, effective area of ​​the heat sink, fan speed, and airflow velocity. The expression is as follows: ,in Indicates the heat flux index. This indicates the operating temperature of the laser. Indicates ambient temperature. Indicates the thermal conductivity of the heat dissipation system. Indicates the effective area of ​​the heat sink. Indicates fan speed. Indicates air velocity;

[0085] It should be noted that before calculating the heat flux index, it is necessary to ensure that the laser's operating temperature, ambient temperature, thermal conductivity of the heat dissipation system, effective area of ​​the heat sink, fan speed, and air velocity have all been normalized.

[0086] The heat flux index at different times is calculated within a preset fixed time period T, and a heat flux index decay model is constructed. The expression used in the heat flux index decay model is as follows: ,in This represents the heat flux index calculated at time t. This represents the initial heat flux index. Indicates the attenuation factor;

[0087] It should be noted that the initial heat flux index and decay factor can be determined using fitting methods such as the least squares method, which will not be elaborated here.

[0088] Calculate the heat dissipation efficiency decline trend index The expression is as follows ,in The mean heat flux index is expressed as follows: ,in The value range is from 0 to T;

[0089] The wavelength drift module is used to acquire the output wavelength information of the semiconductor laser and obtain the output wavelength drift coefficient based on the output wavelength information.

[0090] The output wavelength drift coefficient is used to measure the degree of abnormal drift in the output wavelength of a semiconductor laser. It is used to quantify the magnitude of the change in laser wavelength over time, helping to monitor and evaluate the stability and performance of the laser. Under normal circumstances, the output wavelength of a semiconductor laser should remain stable. Wavelength drift may be caused by temperature changes, aging, or other factors inside the laser. By calculating the wavelength drift coefficient, abnormal changes in wavelength can be detected in time, thereby providing early warning of potential faults. In fast-coupled semiconductor laser systems, the drift of the laser output wavelength may reduce the coupling efficiency between the laser beam and optical fiber or other optical components, causing optical loss and affecting system efficiency and transmission quality.

[0091] A large output wavelength drift coefficient indicates that the abnormal drift of the output wavelength of the semiconductor laser is more severe, which may lead to a decrease in the coupling efficiency of the laser beam in the fast-coupled semiconductor laser system, indicating potential operational problems in the fast-coupled semiconductor laser system. Conversely, a small output wavelength indicates that the output wavelength of the semiconductor laser is more stable.

[0092] Therefore, by obtaining the output wavelength information of the semiconductor laser, the abnormal drift of the output wavelength of the semiconductor laser can be analyzed, and the output wavelength drift coefficient can be obtained to measure the degree of abnormality of the output wavelength drift of the semiconductor laser.

[0093] The logic for obtaining the output wavelength drift coefficient is as follows:

[0094] Obtain the output wavelength value of the semiconductor laser and calculate its output wavelength shift compared to the expected received wavelength value of the external optical system. The expression is as follows ,in This indicates the output wavelength value of the semiconductor laser. This indicates the expected receiving wavelength value of the external optical system;

[0095] Calculate the skewness of wavelength drift The expression is as follows: ,in This represents the output wavelength drift between the nth output wavelength value of the semiconductor laser and the expected received wavelength value of the external optical system within a preset fixed time period T, where n = {1, 2, ..., N}, and N is a positive integer; The mean value of the output wavelength shift is expressed by the following formula: , The standard deviation of the output wavelength drift is expressed by the following formula: ;

[0096] Calculate the kurtosis of wavelength shift The expression is as follows ;

[0097] Calculate the output wavelength drift coefficient The expression is as follows ,in This represents the maximum value acquisition function, used to obtain the maximum value of the output wavelength drift calculated within a fixed time period T.

[0098] The comprehensive evaluation module is used to construct a fast coupling efficiency impact assessment model based on beam angle connection matching deviation coefficient, current frequency fluctuation index, heat dissipation efficiency decline trend index, and output wavelength drift coefficient, generate a fast coupling efficiency impact index, and assess whether there are potential operational hazards in the existing fast coupling semiconductor laser system.

[0099] A rapid coupling efficiency impact assessment model is constructed based on the beam angle connection matching deviation coefficient, current frequency fluctuation index, heat dissipation efficiency decline trend index, and output wavelength drift coefficient, generating a rapid coupling efficiency impact index. The model is based on the following formula: In the formula These represent the preset proportional coefficients for the beam angle connection matching deviation coefficient, current frequency fluctuation index, heat dissipation efficiency decline trend index, and output wavelength drift coefficient, respectively. All are greater than 0;

[0100] It should be noted that before constructing the rapid coupling efficiency impact assessment model, it is necessary to ensure that the beam angle connection matching deviation coefficient, current frequency fluctuation index, heat dissipation efficiency decline trend index, and output wavelength drift coefficient have all been normalized. The settings can be made according to the actual situation. For example, the expert empowerment method can be adopted, which involves inviting experts in relevant fields to determine the preset ratio coefficients of each indicator through professional opinion surveys and comprehensive evaluations.

[0101] As can be seen from the above calculation expressions, the larger the beam angle connection matching deviation coefficient, the larger the current frequency fluctuation index, the larger the heat dissipation efficiency decline trend index, and the larger the output wavelength drift coefficient, the larger the fast coupling efficiency influence index, indicating that the existing fast coupling semiconductor laser system has a greater probability of operational risks. Conversely, the smaller the beam angle connection matching deviation coefficient, the smaller the current frequency fluctuation index, the smaller the heat dissipation efficiency decline trend index, and the smaller the output wavelength drift coefficient, the smaller the fast coupling efficiency influence index, indicating that the existing fast coupling semiconductor laser system has a lower probability of operational risks.

[0102] The impact index of fast coupling efficiency is compared with a preset threshold for the impact index of fast coupling efficiency to assess whether there are potential operational risks in existing fast coupling semiconductor laser systems, as follows:

[0103] If the rapid coupling efficiency impact exponent is greater than the rapid coupling efficiency impact exponent threshold, it indicates that there are potential operational hazards in the existing rapid coupling semiconductor laser system, generating a latent signal of operational hazards.

[0104] If the fast coupling efficiency impact index is less than or equal to the fast coupling efficiency impact index threshold, it indicates that the existing fast coupling semiconductor laser system does not have any potential operational risks and generates a steady-state operating signal.

[0105] The hazard warning module is used to make decisions and provide early warnings based on the degree of operational hazards present in the fast-coupled semiconductor laser system.

[0106] Within a fixed time period T, the potential hazards of existing fast-coupled semiconductor laser systems are assessed using a fast coupling efficiency impact assessment model. The fast coupling efficiency impact index corresponding to the latent signal of the generated operational hazard is obtained and added to the anomaly detection data analysis set. This anomaly detection data analysis set is then labeled as... , The rapid coupling efficiency impact index represents the j-th generation of potential operational hazards signal, where j={1,2,...,M} and M is a positive integer;

[0107] The anomaly detection value is used to calculate the impact index of fast coupling efficiency in the anomaly detection data analysis set. The expression is as follows: ,in The mean of the exponent representing the impact of fast coupling efficiency on the anomaly detection data analysis set is calculated as follows: ; The standard deviation of the index representing the impact of fast coupling efficiency on the anomaly detection data analysis set is expressed as follows: ;

[0108] The abnormal detection values ​​of the rapid coupling efficiency impact index in the abnormal detection data analysis set are compared with the preset abnormal detection value threshold to make decision-making and early warning of the degree of operational risks in the rapid coupling semiconductor laser system, as follows:

[0109] If the anomaly detection value of the fast coupling efficiency impact index in the anomaly detection data analysis set is greater than the anomaly detection value threshold, it indicates that there is a potential operational hazard in the fast coupling semiconductor laser system that is continuously developing, generating an early warning signal to prompt operators or system administrators to take appropriate measures; if the anomaly detection value of the fast coupling efficiency impact index in the anomaly detection data analysis set is less than or equal to the anomaly detection value threshold, it indicates that the potential operational hazard in the fast coupling semiconductor laser system may be an occasional hazard, has no reference value, and does not need to generate an early warning signal to avoid frequent warnings.

[0110] This invention acquires connection matching information between the semiconductor laser and the external optical system, current frequency fluctuation information of the driving circuit, heat dissipation efficiency information of the heat dissipation system, and output wavelength information of the semiconductor laser. It then constructs a rapid coupling efficiency impact assessment model, generates a rapid coupling efficiency impact index, assesses whether existing rapid coupling semiconductor laser systems have potential operational hazards, intelligently senses potential problems in existing rapid coupling semiconductor laser systems, and makes early warning decisions based on the degree of operational hazards. This provides early warning prompts, avoids unnecessary downtime, reduces production interruptions caused by equipment failures, improves overall work efficiency, optimizes resource allocation, and enhances coupling efficiency.

[0111] The above formulas are all dimensionless calculations. The formulas are derived from software simulations based on a large amount of collected data to obtain the most recent real-world results. The preset parameters in the formulas are set by those skilled in the art according to the actual situation.

[0112] The above embodiments can be implemented, in whole or in part, by software, hardware, firmware, or any other combination thereof. When implemented using software, the above embodiments can be implemented, in whole or in part, as a computer program product. The computer program product includes one or more computer instructions or computer programs. When the computer instructions or computer programs are loaded or executed on a computer, all or part of the processes or functions described in the embodiments of this application are generated. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions can be stored in a computer-readable storage medium or transmitted from one computer-readable storage medium to another. For example, the computer instructions can be transmitted from one website, computer, server, or data center to another website, computer, server, or data center via wired or wireless (e.g., infrared, wireless, microwave, etc.) means. The computer-readable storage medium can be any available medium that a computer can access or a data storage device such as a server or data center that includes one or more sets of available media. The available medium can be a magnetic medium (e.g., floppy disk, hard disk, magnetic tape), an optical medium (e.g., DVD), or a semiconductor medium. A semiconductor medium can be a solid-state drive.

[0113] It should be understood that in the various embodiments of this application, the order of the above-mentioned processes does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application.

[0114] If the aforementioned functions are implemented as software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or a portion of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

[0115] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A fast coupling based semiconductor laser system, characterized in that: The module comprises a connection stability module, a circuit fluctuation module, a heat dissipation efficiency monitoring module, a wavelength drift module, a comprehensive evaluation module, and a hidden danger early warning module. The connection stability module is configured to obtain connection matching information of the semiconductor laser and the external optical system, and obtain a light beam angle connection matching deviation coefficient according to the connection matching information. The circuit fluctuation module is configured to obtain current frequency fluctuation information of the semiconductor laser driving circuit, and obtain a current frequency fluctuation index according to the current frequency fluctuation information. The heat dissipation efficiency monitoring module is configured to obtain heat dissipation efficiency information of the heat dissipation system, and obtain a heat dissipation efficiency decline trend index according to the heat dissipation efficiency information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The comprehensive evaluation module is configured to construct a fast coupling efficiency influence evaluation model according to the light beam angle connection matching deviation coefficient, the current frequency fluctuation index, the heat dissipation efficiency decline trend index, and the output wavelength drift coefficient, generate a fast coupling efficiency influence index, and evaluate whether there is a potential operation hidden danger in the existing fast coupling semiconductor laser system. The hidden danger early warning module is configured to make a decision for early warning according to the degree of the operation hidden danger existing in the fast coupling semiconductor laser system. The connection stability module is configured to obtain connection matching information of the semiconductor laser and the external optical system, and obtain a light beam angle connection matching deviation coefficient according to the connection matching information. The heat dissipation efficiency monitoring module is configured to obtain heat dissipation efficiency information of the heat dissipation system, and obtain a heat dissipation efficiency decline trend index according to the heat dissipation efficiency information. Acquiring an incident angle of an output beam of a semiconductor laser and an optimal receiving angle of a receiving surface of an external optical system , calculating an angle deviation , and expressing the following expression ; Computing the degree of mode matching of a semiconductor laser output beam mode to an external optical system receiving mode , where , and represents a semiconductor laser output beam mode function, represents an external optical system receiving mode function, represents an angular coordinate, is the complex conjugate of ranging from 0 to represents a region from the beam center to infinity, and ranging from 0 to represents a complete circumference; Computing beam angle link matching deviation coefficients , the expression is as follows ; The circuit fluctuation module is configured to obtain current frequency fluctuation information of the semiconductor laser driving circuit, and obtain a current frequency fluctuation index according to the current frequency fluctuation information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The heat flow index is calculated by the working temperature of the laser, the ambient temperature, the thermal conductivity of the heat dissipation system, the effective area of the heat sink, the fan rotation speed, and the air flow rate, and the expression is as follows wherein the heat flow index is represented by the working temperature of the laser is represented by the ambient temperature is represented by the thermal conductivity of the heat dissipation system is represented by the effective area of the heat sink is represented by the fan rotation speed is represented by the air flow rate is represented by The heat flow index at different time is calculated in a preset fixed time period T, and a heat flow index decay model is constructed, and the expression of the heat flow index decay model is as follows Wherein The heat flow index calculated at t time is represented by The initial heat flow index is represented by The decay factor is represented by Computing the heat dissipation efficiency decreasing trend index , the expression is as follows , wherein represents the heat flow index mean, and the calculation expression is as follows , wherein The value range of T is from 0 to T.

2. The fast-coupling-based semiconductor laser system according to claim 1, characterized in that: The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. Obtain time domain current signal data of semiconductor laser driving circuit in preset fixed time period T ; The mother wavelet function is selected to calculate wavelet coefficients at different scales a and time positions b , as follows where is the complex conjugate of the mother wavelet function, scale a is used to control the frequency resolution of the wavelet, and time position b is used to control the time translation; Computing wavelet energy spectrum , the expression is as follows ; Computing the energy spectrum mean , is given by where denotes the wavelet energy spectrum at the i-th scale a, , is a positive integer; computing the energy spectrum standard deviation , is given by ; Computing a current frequency fluctuation index , the expression being as follows .

3. The fast-coupling-based semiconductor laser system of claim 1, wherein: The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. An output wavelength value of a semiconductor laser is acquired, and an output wavelength shift amount between the output wavelength value and a reception wavelength value expected by an external optical system is calculated , and the expression is as follows , wherein represents an output wavelength value of a semiconductor laser, represents a reception wavelength value expected by an external optical system Skewness of wavelength drift is expressed as wherein represents the output wavelength drift amount between the output wavelength value of the semiconductor laser at the nth time and the expected reception wavelength value of the external optical system within a preset fixed time period T, n = {1, 2,..., N}, N being a positive integer; represents the mean value of the output wavelength drift amount, and the calculation expression is as follows , represents the standard deviation of the output wavelength drift amount, and the calculation expression is as follows ; Kurtosis of computed wavelength shift , the expression is as follows ; Computing an output wavelength shift coefficient , the expression is as follows , wherein represents a maximum value acquisition function for acquiring a maximum value of the output wavelength shift amount calculated for a fixed time period T.

4. The fast-coupling-based semiconductor laser system of claim 1, wherein: According to the light beam angle connection matching deviation coefficient, the current frequency fluctuation index, the heat dissipation efficiency decline trend index and the output wavelength drift coefficient, a fast coupling efficiency influence evaluation model is constructed to generate a fast coupling efficiency influence index , the formula of the model is as follows , wherein 、 、 、 respectively represent preset proportion coefficients of the light beam angle connection matching deviation coefficient, the current frequency fluctuation index, the heat dissipation efficiency decline trend index and the output wavelength drift coefficient, and 、 、 、 are all greater than 0.

5. The fast-coupling-based semiconductor laser system according to claim 4, characterized in that: The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the semiconductor laser, and obtain an output wavelength drift coefficient according to the output wavelength information. The wavelength drift module is configured to obtain output wavelength information of the 6. The fast-coupling-based semiconductor laser system according to claim 5, characterized in that: The potential hidden danger of the existing fast coupling semiconductor laser system is evaluated according to the fast coupling efficiency influence evaluation model in a fixed time period T, and a fast coupling efficiency influence index corresponding to the generated operation hidden danger latency signal is obtained, which is added to the abnormal detection data analysis set, and the abnormal detection data analysis set is marked as, indicating the fast coupling efficiency influence index of the jth generated operation hidden danger latency signal, j={1, 2,..., M}, M is a positive integer; Computing anomaly detection values for fast coupling efficiency impact indices in anomaly detection data analysis sets , expressed as where represents the mean of the fast coupling efficiency impact indices in the anomaly detection data analysis set, computed as ; represents the standard deviation of the fast coupling efficiency impact indices in the anomaly detection data analysis set, computed as ; The abnormal detection value of the fast coupling efficiency influence index in the abnormal detection data analysis set is compared with the preset abnormal detection value threshold, and the degree of the operation hidden danger existing in the fast coupling semiconductor laser system is decided and warned, as follows: If the abnormal detection value of the fast coupling efficiency influence index in the abnormal detection data analysis set is greater than the abnormal detection value threshold, a warning signal is generated; if the abnormal detection value of the fast coupling efficiency influence index in the abnormal detection data analysis set is less than or equal to the abnormal detection value threshold, no warning signal is generated.

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