An adjustable and universal MOSFET gate drive circuit and drive method

Abstract

A controllable and universal MOSFET gate drive circuit and drive method, which relates to the field of power electronics. It includes a logic control module, a parameter adjustment module, a turn-on module, a turn-off module, an external parameter module, and an external gate resistor. By utilizing the variation characteristics of the transconductance capacitance of the power MOSFET, the slope of the gate-source voltage waveform is controlled through each module during the turn-on and turn-off processes, respectively realizing fine regulation of the drain-source current and drain-source voltage during the turn-on process, and separate fine regulation of the drain-source current and drain-source voltage during the turn-off process, enabling this architecture to achieve fine regulation of the electromagnetic interference and turn-on loss during the turn-on process of the power MOSFET, and fine regulation of the voltage overshoot and turn-off loss during the turn-off process; solving the problem that the current drive circuit of the power MOSFET is difficult to meet the goals of low electromagnetic interference and low turn-on loss during the turn-on process, low voltage overshoot and low turn-off loss during the turn-off process, and at the same time difficult to meet the high power density requirements of modern power electronic devices.

Description

Technical Field

[0001] The present invention relates to the field of power electronics, and particularly to an adjustable and universal MOSFET gate drive circuit and a drive method. Background Art

[0002] During the turn-on and turn-off processes of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), it is necessary to convert the switching digital signal into an analog signal suitable for the gate of the power MOSFET through gate drive, so that the power MOSFET can complete the switching action. For the switching action of the power MOSFET, there are contradictions between the electromagnetic interference caused by the rising current on the drain-source side and the turn-on loss during the turn-on process, and there are contradictions between the overshoot of the drain-source side voltage and the turn-off loss during the turn-off process. Therefore, it is necessary to regulate the drain-source side voltage and current trajectories during the turn-on and turn-off processes to meet the requirements of power electronic devices.

[0003] Currently, the existing drive circuit can only adjust the drain-source side voltage and current trajectories of the power MOSFET during the turn-on process by adjusting the gate resistance, and adjust the voltage and current trajectories of the power MOSFET during the turn-off process by cooperating with the gate resistance through the two-level turn-off method. This method is difficult to meet the goals of low electromagnetic interference and low turn-on loss during the turn-on process, low voltage overshoot and low turn-off loss during the turn-off process, and at the same time, it is difficult to meet the high power density requirements of modern power electronic devices. Summary of the Invention

[0004] The present invention is to solve the problem that the current drive circuit of the power MOSFET is difficult to meet the goals of low electromagnetic interference and low turn-on loss during the turn-on process, low voltage overshoot and low turn-off loss during the turn-off process, and at the same time, it is difficult to meet the high power density requirements of modern power electronic devices, and provides an adjustable and universal MOSFET gate drive circuit and a drive method.

[0005] From the perspective of the gate driving mechanism, the present invention proposes a controllable and universal MOSFET gate driving circuit, which finely regulates the gate voltage and current waveforms during the switching process of the power MOSFET, so as to achieve the purpose that the power MOSFET has low electromagnetic interference and low turn-on loss during turn-on, and has low voltage overshoot and low turn-off loss during turn-off. At the same time, the controllable and universal MOSFET gate driving circuit and driving method proposed by the present invention can adjust and configure parameters according to the parasitic parameters of the power MOSFET to improve universality. In addition, the controllable and universal MOSFET gate driving circuit and driving method proposed by the present invention only control the gate-source side of the power MOSFET to realize the regulation of the drain-source side voltage and current trajectory, without introducing the drain information of the power MOSFET, reducing the circuit insulation requirements and increasing the power density.

[0006] The technical solution adopted by the present invention is as follows:

[0007] A controllable and universal MOSFET gate driving circuit, which is used to drive a to-be-controlled power MOSFET (08),

[0008] The driving circuit includes a power supply module (01), a logic control module (02), a parameter adjustment module (03), a turn-on module (04), a turn-off module (05), an external parameter module (06), an external gate resistor (07), an input terminal Vin, an input voltage VDD, an input terminal Vp1, an input terminal Vp2, an input terminal Vp3, and an output terminal Vout;

[0009] The power supply module (01) is used to provide power for the logic control module (02) and the parameter adjustment module (03);

[0010] The logic control module (02) is used to send parameter adjustment instructions to the parameter adjustment module (03), send turn-on instructions to the turn-on module (04), and send turn-off instructions to the turn-off module (05);

[0011] The parameter adjustment module (03) is used to receive the external parameter voltage and current state information of the external parameter module (06) through the input terminal Vp1, the input terminal Vp2, and the input terminal Vp3, and regulate the working states of the turn-on module (04) and the turn-off module (05);

[0012] The turn-on module (04) is used to control the turn-on of the to-be-controlled power MOSFET (08) through the external gate resistor (07);

[0013] The turn-off module (05) is used to control the turn-off of the to-be-controlled power MOSFET (08) through the external gate resistor (07);

[0014] The external parameter module (06) is used to convey the external parameter voltage and current status information to the parameter adjustment module (03);

[0015] The external gate resistor (07) is used to connect the power MOSFET to be controlled (08) to the turn-on module (04) and the turn-off module (05), eliminating the gate voltage oscillation generated during the turn-on process and turn-off process of the power MOSFET to be controlled (08);

[0016] The input terminal Vin is used as the input terminal of the logic control module (02), inputting a switching PWM signal to the logic control module (02);

[0017] The input voltage VDD is used to supply power to the power supply module (01) and the turn-on module (04), and the external power supply voltage is supplied through it; the output terminal Vout is the connection terminal of the external gate resistor (07) with the turn-on module (04) and the turn-off module (05).

[0018] Further, the external parameter module (06) includes a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a first capacitor C1, and a second capacitor C2;

[0019] The input terminal Vp1, the second resistor R2, the first capacitor C1, and the ground are connected in series in sequence;

[0020] The input terminal Vp2, the third resistor R3, the fourth resistor R4, and the ground are connected in series in sequence;

[0021] The input terminal Vp2, the third resistor R3, the second capacitor C2, and the ground are connected in series in sequence;

[0022] The input terminal Vp3, the fifth resistor R5, and the ground are connected in series in sequence.

[0023] Based on a driving method of an adjustable and universal MOSFET gate driving circuit, the method is as follows:

[0024] The power supply module (01) converts the input voltage VDD into a voltage suitable for the operation of the logic control module (02) and the parameter adjustment module (03);

[0025] The logic control module (02) determines the working modes of the parameter adjustment module (03), the turn-on module (04), and the turn-off module (05) according to the switching PWM signal of the input terminal Vin;

[0026] The parameter adjustment module (03) adjusts the working characteristics of the parameter adjustment module (03) according to the voltage and current status information of the external parameter module (06), and further regulates the working characteristics of the turn-on module (04) and the turn-off module (05);

[0027] The enabling module (04) establishes a current charging path according to the parameter adjustment instruction transmitted by the parameter adjustment module (03), injects current into the gate of the power MOSFET to be controlled (08) through the external gate resistor (07), and enables the power MOSFET to be controlled (08);

[0028] The disabling module (05) establishes a current discharging path according to the parameter adjustment instruction transmitted by the parameter adjustment module (03), extracts current from the gate of the power MOSFET to be controlled (08) through the external gate resistor (07), and disables the power MOSFET to be controlled (08);

[0029] The external parameter module (06) configures the resistance and capacitance values of the second resistor R2, the third resistor R3, the fourth resistor R4, the fifth resistor R5, the first capacitor C1, and the second capacitor C2 inside the external parameter module (06) according to the parasitic parameters of the power MOSFET to be controlled (08), so that the operating characteristics of the parameter adjustment module (03), the enabling module (04), and the disabling module (05) match the parasitic parameters of the power MOSFET to be controlled (08).

[0030] Further, during the turn-on process of the power MOSFET to be controlled (08), the method of representing the gate voltage waveform of the power MOSFET to be controlled (08) is as follows:

[0031] In the first stage, when the gate voltage of the power MOSFET to be controlled (08) is lower than the threshold voltage (Vth), the gate voltage of the power MOSFET to be controlled (08) rises rapidly;

[0032] In the second stage, when the gate voltage of the power MOSFET to be controlled (08) is greater than the threshold voltage (Vth) but less than the Miller plateau voltage (Vmiller), in this stage, the gate voltage of the power MOSFET to be controlled (08) rises linearly and controllably, and the slope of the gate voltage waveform remains unchanged;

[0033] In the third stage, when the gate voltage of the power MOSFET to be controlled (08) is at the Miller plateau voltage (Vmiller), the gate voltage of the power MOSFET to be controlled (08) remains at the Miller plateau voltage (Vmiller);

[0034] In the fourth stage, when the gate voltage of the power MOSFET to be controlled (08) is higher than the Miller plateau voltage (Vmiller), the gate voltage of the power MOSFET to be controlled (08) resumes linear and controllable rise.

[0035] Further, during the turn-off process of the power MOSFET to be controlled (08), the method of representing the gate voltage waveform of the power MOSFET to be controlled (08) is as follows:

[0036] In the first stage, when the gate voltage of the power MOSFET (08) to be controlled is higher than the Miller plateau voltage (Vmiller), the gate voltage of the power MOSFET (08) to be controlled drops rapidly.

[0037] In the second stage, when the gate voltage of the power MOSFET (08) to be controlled is at the Miller plateau voltage (Vmiller), the gate voltage of the power MOSFET (08) to be controlled is maintained at the Miller plateau voltage (Vmiller).

[0038] In the third stage, when the gate voltage of the power MOSFET (08) to be controlled is lower than the Miller plateau voltage (Vmiller) but higher than the threshold voltage, the gate voltage of the power MOSFET (08) to be controlled drops slowly.

[0039] In the fourth stage, when the gate voltage of the power MOSFET (08) to be controlled is lower than the threshold voltage (Vth), the gate voltage of the power MOSFET (08) to be controlled drops rapidly to zero.

[0040] Furthermore, during the turn-off process of the power MOSFET (08) to be controlled, the fifth resistor R5 in the external parameter module (06) affects the gate turn-off threshold voltage Vth of the power MOSFET (08) to be controlled. The specific manifestation is that when the resistance value of the fifth resistor R5 is larger, the gate turn-off threshold voltage Vth value of the power MOSFET (08) to be controlled is higher, and vice versa.

[0041] Furthermore, during the turn-on process of the power MOSFET (08) to be controlled, the second resistor R2 and the first capacitor C1 in the external parameter module (06) affect the drain-source voltage and drain-source current waveforms. The specific manifestation is as follows:

[0042] When the resistance value of the second resistor R2 remains unchanged, the larger the capacitance value of the first capacitor C1, the smaller the slope of the drain-source current of the power MOSFET (08) to be controlled, and the smaller the absolute value of the slope of the drain-source voltage.

[0043] When the capacitance value of the first capacitor C1 remains unchanged, the larger the resistance value of the second resistor R2, the smaller the slope of the drain-source current of the power MOSFET (08) to be controlled, and the smaller the absolute value of the slope of the drain-source voltage.

[0044] Furthermore, during the turn-off process of the power MOSFET (08) to be controlled, the third resistor R3, the fourth resistor R4, and the second capacitor C2 in the external parameter module (06) affect the drain-source voltage and drain-source current waveforms. The specific manifestation is as follows:

[0045] When the resistance values of the fourth resistor R4 and the second capacitor C2 and the capacitance value remain unchanged, the larger the resistance value of the third resistor R3 is, the slope of the drain-source voltage of the power MOSFET (08) to be controlled remains unchanged, and the larger the absolute value of the slope of the drain-source current of the power MOSFET (08) to be controlled is;

[0046] When the resistance values of the third resistor R3 and the second capacitor C2 and the capacitance value remain unchanged, the larger the resistance value of the fourth resistor R4 is, the smaller the slope of the drain-source voltage of the power MOSFET (08) to be controlled is, and the smaller the absolute value of the slope of the drain-source current of the power MOSFET (08) to be controlled is;

[0047] When the resistance values of the third capacitor R3 and the fourth resistor R4 remain unchanged, the smaller the capacitance value of the second capacitor C2 is, the smaller the slope of the drain-source voltage of the power MOSFET (08) to be controlled is, and the smaller the absolute value of the slope of the drain-source current of the power MOSFET (08) to be controlled is.

[0048] Furthermore, during the turn-on process of the power MOSFET (08) to be controlled, without introducing the drain-source side information of the power MOSFET (08) to be controlled, by utilizing the variation characteristics of the transconductance capacitance of the power MOSFET (08) to be controlled, only the gate-source of the power MOSFET (08) to be controlled is regulated, and finally the regulation of the drain-source voltage and current trajectories of the power MOSFET (08) to be controlled is completed;

[0049] During the turn-off process of the power MOSFET (08) to be controlled, without introducing the drain-source side information of the power MOSFET (08) to be controlled, by utilizing the variation characteristics of the transconductance capacitance of the power MOSFET during the turn-off process, only the gate-source voltage of the power MOSFET (08) to be controlled is controlled to achieve the regulation of the drain-source voltage and current trajectories of the power MOSFET (08) to be controlled;

[0050] By changing the internal resistance and capacitance parameters of the external parameter module (06), the output characteristics of the adjustable universal MOSFET gate drive circuit are regulated to match the power MOSFET (08) to be controlled with different parasitic parameters;

[0051] The drive circuit regulates the slopes of the drain-source voltage and current of the power MOSFET (08) to be controlled therein separately.

[0052] Beneficial effects:

[0053] Compared with the prior art, the present invention has the following advantages:

[0054] 1. During the turn-on and turn-off processes of the power MOSFET to be controlled, by controlling the gate voltage and current of the power MOSFET to be controlled, fine regulation of the drain-source voltage and drain-source current waveforms of the power MOSFET to be controlled is achieved, enabling the power MOSFET to have low electromagnetic interference and low turn-on loss during the turn-on process, and low voltage overshoot and low turn-off loss during the turn-off process;

[0055] 2. By matching the parasitic parameters of the power MOSFET to be controlled through an external parameter module, the universality of the circuit is improved;

[0056] 3. Without introducing the drain of the power MOSFET to be controlled as state feedback, only by controlling the gate-source side of the power MOSFET to be controlled, the regulation of the drain-source voltage and current waveforms is achieved, reducing the insulation requirements and increasing the power density of the circuit. Description of the Drawings

[0057] Figure 1 Schematic diagram of an adjustable and universal MOSFET gate drive circuit;

[0058] Figure 2 Circuit diagram of the external parameter module in an adjustable and universal MOSFET gate drive circuit;

[0059] Figure 3 Waveform diagram of the gate voltage and current during the turn-on process of the power MOSFET to be controlled;

[0060] Figure 4 Waveform diagram of the gate voltage and current during the turn-off process of the power MOSFET to be controlled;

[0061] Figure 5 Waveform diagram of the gate voltage and current during the turn-off process of the power MOSFET to be controlled under the influence of the fifth resistor R5 in the external parameter module;

[0062] Figure 6 Waveform diagram of the drain-source voltage and drain-source current during the turn-on process of the power MOSFET to be controlled under the influence of the second resistor R2 in the external parameter module;

[0063] Figure 7 Waveform diagram of the drain-source voltage and drain-source current during the turn-on process of the power MOSFET to be controlled under the influence of the first capacitor C1 in the external parameter module;

[0064] Figure 8 Waveform diagram of the drain-source voltage and drain-source current during the turn-off process of the power MOSFET to be controlled under the influence of the third resistor R3 in the external parameter module;

[0065] Figure 9Waveform diagrams of drain-source voltage and drain-source current during the turn-off process of the power MOSFET to be controlled under the influence of the fourth resistor R4 in the external parameter module;

[0066] Figure 10 Waveform diagrams of drain-source voltage and drain-source current during the turn-off process of the power MOSFET to be controlled under the influence of the second resistor C2 in the external parameter module; Specific implementation manners

[0067] Specific implementation manner 1. Refer to Figures 1 to 10 Specifically describe this implementation manner. The present invention provides an adjustable universal MOSFET gate drive circuit, which is mainly applied to the turn-on and turn-off drives of power MOSFET devices in power electronic devices. This gate drive circuit is used to drive the power MOSFET (08) to be controlled;

[0068] This drive circuit includes a power supply module (01), a logic control module (02), a parameter adjustment module (03), a turn-on module (04), a turn-off module (05), an external parameter module (06), an external gate resistor (07), an input terminal Vin, an input voltage VDD, input terminals Vp1, Vp2, Vp3, and an output terminal Vout;

[0069] The power supply module (01) is used to supply power to the logic control module (02) and the parameter adjustment module (03);

[0070] The logic control module (02) is used to send parameter adjustment instructions to the parameter adjustment module (03), send turn-on instructions to the turn-on module (04), and send turn-off instructions to the turn-off module (05);

[0071] The parameter adjustment module (03) is used to receive the external parameter voltage and current status information of the external parameter module (06) through the input terminals Vp1, Vp2, and Vp3;

[0072] The turn-on module (04) is used to control the turn-on of the power MOSFET (08) to be controlled through the external gate resistor (07);

[0073] The turn-off module (05) is used to control the turn-off of the power MOSFET (08) to be controlled through the external gate resistor (07);

[0074] The external parameter module (06) is used to send the external parameter voltage and current status information to the parameter adjustment module (03);

[0075] The external gate resistor (07) is used to connect the power MOSFET (08) to be controlled to the turn-on module (04) and the turn-off module (05), and eliminate the gate voltage oscillation generated during the turn-on process and turn-off process of the power MOSFET (08) to be controlled;

[0076] The input terminal Vin is used as the input terminal of the logic control module (02) to input a switching PWM signal to the logic control module (02);

[0077] The input voltage VDD is used to supply power to the power supply module (01) and the turn-on module (04), and the external power supply voltage is supplied by it; the output terminal Vout is the connection terminal of the external gate resistor (07) to the turn-on module (04) and the turn-off module (05).

[0078] The external parameter module (06) includes a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a first capacitor C1, and a second capacitor C2;

[0079] The input terminal Vp1, the second resistor R2, the first capacitor C1, and the ground are connected in series in sequence;

[0080] The input terminal Vp2, the third resistor R3, the fourth resistor R4, and the ground are connected in series in sequence;

[0081] The input terminal Vp2, the third resistor R3, the second capacitor C2, and the ground are connected in series in sequence;

[0082] The input terminal Vp3, the fifth resistor R5, and the ground are connected in series in sequence.

[0083] In this embodiment, starting from the perspective of the gate driving mechanism, the present invention proposes a controllable and universal MOSFET gate driving circuit, which finely regulates the gate voltage and current waveforms during the switching process of the power MOSFET, so as to achieve the purpose that the power MOSFET has low electromagnetic interference and low turn-on loss during the turn-on process, and has low voltage overshoot and low turn-off loss during the turn-off process.

[0084] The gate driving circuit is driven by a switching PWM signal, and the gate driving circuit drives the power MOSFET (08) to be controlled.

[0085] The external parameter module adjusts and configures parameters through the parameter adjustment module according to the parasitic parameters of the power MOSFET, thereby further controlling the working states of the turn-on module (04) and the turn-off module (05), so as to regulate the turn-on or turn-off of the power MOSFET. The logic control module (02) determines the working modes of the parameter adjustment module (03), the turn-on module (04), and the turn-off module (05) according to the switching PWM signal at the input terminal Vin to match the parasitic parameters of the power MOSFET (08) to be controlled, thereby realizing the turn-on or turn-off control of the power MOSFET.

[0086] Meanwhile, a controllable and universal MOSFET gate drive circuit and drive method proposed by the present invention can adjust and configure parameters according to the parasitic parameters of the power MOSFET to improve the universality of the circuit. In addition, a controllable and universal MOSFET gate drive circuit and drive method proposed by the present invention can realize the regulation of the drain-source side voltage and current trajectory only by controlling the gate-source side of the power MOSFET, without introducing the drain information of the power MOSFET, reducing the insulation requirements of the circuit and increasing the power density.

[0087] As Figure 1 shown, the drive circuit is applicable to power electronic devices using power MOSFETs, and the power electronic devices include power converters and inverters.

[0088] The ports of the controllable and universal MOSFET gate drive circuit include:

[0089] The Vin port inputs a switching PWM signal, and the Vin port is connected to the input terminal of the internal logic control module;

[0090] The VDD port inputs a supply voltage, and the VDD port is connected to the input terminals of the internal power supply module and the turn-on module;

[0091] The Vout port is connected to the output terminals of the internal turn-on module and the turn-off module and an external gate resistor;

[0092] The Vp1 port is connected to the output terminal of the external parameter module and the input terminal of the parameter adjustment module inside the circuit. Its function is to adjust the drain-source side voltage and current trajectory during the turn-on process of the power MOSFET to be controlled;

[0093] The Vp2 port is connected to the output terminal of the external parameter module and the input terminal of the parameter adjustment module inside the circuit. Its function is to adjust the drain-source side voltage and current trajectory during the turn-off process of the power MOSFET to be controlled;

[0094] The Vp3 port is connected to the output end of the external parameter module and the input end of the internal circuit parameter adjustment module. Its function is to adjust the gate turn-off threshold voltage during the turn-off process of the power MOSFET to be controlled.

[0095] Specific Embodiment 2: The adjustable universal MOSFET gate drive circuit includes a power supply module, a logic control module, a parameter adjustment module, a turn-on module, a turn-off module, an external parameter module, an external gate resistor, and a power MOSFET to be controlled, where:

[0096] The input end of the power supply module is connected to the input voltage VDD, and the output end of the power supply module is connected to the input ends of the logic control module and the parameter adjustment module, and is used to convert the input voltage VDD into a voltage suitable for the operation of the logic control module and the parameter adjustment module;

[0097] The input end of the logic control module is connected to the input signal Vin, and the output end of the logic control module is connected to the input ends of the parameter adjustment module, the turn-on module, and the turn-off module, and is used to determine the working modes of the parameter adjustment module, the turn-on module, and the turn-off module according to the input signal Vin;

[0098] The input end of the parameter adjustment module is connected to the output ends of the power supply module, the logic control module, and the external parameter module, and the output end of the parameter adjustment module is connected to the input ends of the turn-on module and the turn-off module, and can configure the external parameter module according to the characteristic parameters of the power MOSFET to be controlled, and regulate the working characteristics of the turn-on module and the turn-off module;

[0099] The input end of the turn-on module is connected to the output ends of the logic control module and the parameter adjustment module, the output end of the turn-on module is connected to the output signal Vout, and is connected to the gate of the power MOSFET to be controlled through the external gate resistor, and is used to establish a current charging path according to the signal transmitted by the parameter adjustment module, inject current into the gate of the power MOSFET to be controlled through the external gate resistor R1, and turn on the power MOSFET to be controlled;

[0100] The input end of the turn-off module is connected to the output ends of the logic control module and the parameter adjustment module, the output end of the turn-off module is connected to the output signal Vout, and is connected to the gate of the power MOSFET to be controlled through the external gate resistor, and is used to establish a current discharging path according to the signal transmitted by the parameter adjustment module, extract current from the gate of the power MOSFET to be controlled through the external gate resistor, and turn off the power MOSFET to be controlled;

[0101] The external parameter module includes a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a first capacitor C1, and a second capacitor C2, as Figure 2As shown, the output terminal of the external parameter module is connected to the input terminal of the parameter adjustment module, which is used to make the working characteristics of the parameter adjustment module, the turn-on module, and the turn-off module match the parasitic parameters of the power MOSFET to be controlled. The working characteristics of the turn-on module and the turn-off module are changed through the parameter adjustment module. Further, the external parameter module affects the waveforms of the gate-source voltage, drain-source voltage, and drain-source current of the power MOSFET to be controlled during the turn-on and turn-off processes.

[0102] An external gate resistor R1 and a power MOSFET to be controlled, where the external gate resistor is connected to the output terminal Vout of the circuit and the gate of the power MOSFET to be controlled, and is used to eliminate the gate voltage oscillation during the turn-on and turn-off processes of the power MOSFET to be controlled.

[0103] Specific Embodiment 3: During the turn-on and turn-off processes of the power MOSFET to be controlled, the functions of the above-mentioned modules are specifically manifested as follows:

[0104] The power supply module is used to convert the input voltage VDD into a voltage suitable for the operation of the logic control module and the parameter adjustment module.

[0105] The logic control module is used to judge the working modes of the parameter adjustment module, the turn-on module, and the turn-off module according to the input signal Vin.

[0106] The parameter adjustment module is affected by the external parameter module to adjust the working characteristics of the module, and further controls the working characteristics of the turn-on module and the turn-off module.

[0107] The turn-on module is used to establish a current charging path according to the signal transmitted by the parameter adjustment module, inject current into the gate of the power MOSFET to be controlled through the external gate resistor R1, and turn on the power MOSFET to be controlled.

[0108] The turn-off module is used to establish a current discharging path according to the signal transmitted by the parameter adjustment module, extract current from the gate of the power MOSFET to be controlled through the external gate resistor, and turn off the power MOSFET to be controlled.

[0109] The external parameter module can configure the resistance and capacitance values of the second resistor R2, the third resistor R3, the fourth resistor R4, the fifth resistor R5, the first capacitor C1, and the second capacitor C2 inside the module according to the parasitic parameters of the power MOSFET to be controlled, so that the working characteristics of the parameter adjustment module, the turn-on module, and the turn-off module match the parasitic parameters of the power MOSFET to be controlled. Further, the external parameter module affects the waveforms of the drain-source voltage and drain-source current of the power MOSFET to be controlled during the turn-on and turn-off processes.

[0110] The external gate resistor R1 is used to eliminate the gate voltage oscillation during the turn-on and turn-off processes of the power MOSFET to be controlled.

[0111] Specific Embodiment 4: AsFigure 3 As shown, during the turn-on process of the controllable universal MOSFET gate drive circuit for the MOSFET to be controlled, the waveforms of the gate voltage and current of the MOSFET to be controlled are as follows:

[0112] In the first stage, when the gate voltage of the MOSFET to be controlled is lower than the threshold voltage (Vth), the gate voltage of the MOSFET to be controlled rises rapidly.

[0113] In the second stage, when the gate voltage of the MOSFET to be controlled is greater than the threshold voltage (Vth) but less than the Miller plateau voltage (Vmiller), the gate voltage of the MOSFET to be controlled rises linearly and controllably in this stage.

[0114] In the third stage, when the gate voltage of the MOSFET to be controlled is at the Miller plateau voltage (Vmiller), the gate voltage of the MOSFET to be controlled remains at the Miller plateau voltage (Vmiller).

[0115] In the fourth stage, when the gate voltage of the MOSFET to be controlled is higher than the Miller plateau voltage (Vmiller), the gate voltage of the MOSFET to be controlled resumes the linearly controllable rising state.

[0116] Specific Embodiment Five. As Figure 4 shown, during the turn-off process of the controllable universal MOSFET gate drive circuit for the MOSFET to be controlled, the waveforms of the gate voltage and current of the MOSFET to be controlled are as follows:

[0117] In the first stage, when the gate voltage of the MOSFET to be controlled is higher than the Miller plateau voltage (Vmiller), the gate voltage of the MOSFET to be controlled drops rapidly.

[0118] In the second stage, when the gate voltage of the MOSFET to be controlled is at the Miller plateau voltage (Vmiller), the gate voltage of the MOSFET to be controlled maintains at the Miller plateau voltage (Vmiller).

[0119] In the third stage, when the gate voltage of the MOSFET to be controlled is lower than the Miller plateau voltage (Vmiller) but higher than the threshold voltage, the gate voltage of the MOSFET to be controlled drops slowly.

[0120] In the fourth stage, when the gate voltage of the MOSFET to be controlled is lower than the threshold voltage (Vth), the gate voltage of the MOSFET to be controlled drops rapidly to zero.

[0121] Specific Embodiment Six. Refer to Figure 5As shown, during the turn-off process of the controllable universal MOSFET gate drive circuit for the MOSFET to be controlled, the fifth resistor R5 in its external parameter module affects the gate turn-off threshold voltage Vth of the MOSFET to be controlled. Specifically, when the resistance value of the fifth resistor R5 is larger, the gate turn-off threshold voltage Vth value of the MOSFET to be controlled is higher, and vice versa, as Figure 5 shown.

[0122] Specific Embodiment Seven. Refer to Figure 6 and 7 shown. During the turn-on process of the controllable universal MOSFET gate drive circuit for the MOSFET to be controlled, the second resistor R2 and the first capacitor C1 in its external parameter module affect the drain-source voltage and drain-source current waveforms. Specifically:

[0123] When the resistance value of the second resistor R2 remains unchanged, the larger the capacitance value of the first capacitor C1, the smaller the slope of the drain-source current of the MOSFET to be controlled, and the smaller the absolute value of the slope of the drain-source voltage, as Figure 6 shown;

[0124] When the capacitance value of the first capacitor C1 remains unchanged, the larger the resistance value of the second resistor R2, the smaller the slope of the drain-source current of the MOSFET to be controlled, and the smaller the absolute value of the slope of the drain-source voltage, as Figure 7 shown.

[0125] Specific Embodiment Four. Refer to Figure 8 , 9 , 10 shown. During the turn-off process of the controllable universal MOSFET gate drive circuit for the MOSFET to be controlled, the third resistor R3, the fourth resistor R4, and the second capacitor C2 in its external parameter module affect the drain-source voltage and drain-source current waveforms. Specifically:

[0126] When the resistance and capacitance values of the fourth resistor R4 and the second capacitor C2 remain unchanged, the larger the resistance value of the third resistor R3, the drain-source voltage slope of the MOSFET to be controlled remains unchanged, and the absolute value of the drain-source current slope of the MOSFET to be controlled is larger, as Figure 8 shown;

[0127] When the resistance and capacitance values of the third resistor R3 and the second capacitor C2 remain unchanged, the larger the resistance value of the fourth resistor R4, the smaller the drain-source voltage slope of the MOSFET to be controlled, and the smaller the absolute value of the drain-source current slope of the MOSFET to be controlled, as Figure 9 shown;

[0128] When the resistance values of the third capacitor R3 and the fourth resistor R4 remain unchanged, the smaller the capacitance value of the second capacitor C2, the smaller the drain-source voltage slope of the MOSFET to be controlled, and the smaller the absolute value of the drain-source current slope of the MOSFET to be controlled, asFigure 10 as shown

[0129] The present invention is illustrated by several specific embodiments. Those skilled in the art should understand that various transformations and equivalent substitutions can be made to the present invention without departing from the scope of the present invention. In addition, various modifications can be made to the present invention for a specific situation or specific circumstances without departing from the scope of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed, but should include all embodiments falling within the scope of the claims of the present invention.

Claims

1. A controllable universal MOSFET gate drive circuit for driving a power MOSFET to be controlled (08), characterized in that the drive circuit includes a power supply module (01), a logic control module (02), a parameter adjustment module (03), a turn-on module (04), a turn-off module (05), an external parameter module (06), an external gate resistor (07), an input terminal Vin, an input voltage VDD, an input terminal Vp1, an input terminal Vp2, an input terminal Vp3, and an output terminal Vout; the power supply module (01) is used to supply power to the logic control module (02) and the parameter adjustment module (03); the logic control module (02) is used to send parameter adjustment instructions to the parameter adjustment module (03), send turn-on instructions to the turn-on module (04), and send turn-off instructions to the turn-off module (05); the parameter adjustment module (03) is used to receive the external parameter voltage and current status information of the external parameter module (06) through the input terminal Vp1, the input terminal Vp2, and the input terminal Vp3, and regulate the working states of the turn-on module (04) and the turn-off module (05); the turn-on module (04) is used to control the turn-on of the power MOSFET to be controlled (08) through the external gate resistor (07); the turn-off module (05) is used to control the turn-off of the power MOSFET to be controlled (08) through the external gate resistor (07); the external parameter module (06) is used to send external parameter voltage and current status information to the parameter adjustment module (03); the external gate resistor (07) is used to connect the power MOSFET to be controlled (08) to the turn-on module (04) and the turn-off module (05), and eliminate the gate voltage oscillation generated during the turn-on and turn-off processes of the power MOSFET to be controlled (08); the input terminal Vin is used as the input terminal of the logic control module (02) to input a switching PWM signal to the logic control module (02); the input voltage VDD is used to supply power to the power supply module (01) and the turn-on module (04), and the external power supply voltage is supplied through it; the output terminal Vout is the connection terminal of the external gate resistor (07) with the turn-on module (04) and the turn-off module (05); the external parameter module (06) configures the resistance and capacitance values of the second resistor R2, the third resistor R3, the fourth resistor R4, the fifth resistor R5, the first capacitor C1, and the second capacitor C2 inside the external parameter module (06) according to the parasitic parameters of the power MOSFET to be controlled (08), so that the working characteristics of the parameter adjustment module (03), the turn-on module (04), and the turn-off module (05) match the parasitic parameters of the power MOSFET to be controlled (08); the external parameter module (06) includes a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a first capacitor C1, and a second capacitor C2; the input terminal Vp1, the second resistor R2, the first capacitor C1, and the ground are connected in series in turn; The input terminal Vp2, the third resistor R3, the fourth resistor R4, and the ground are connected in series in sequence; The input terminal Vp2, the third resistor R3, the second capacitor C2, and the ground are connected in series in sequence; The input terminal Vp3, the fifth resistor R5, and the ground are connected in series in sequence.

2. A driving method for an adjustable universal MOSFET gate driving circuit according to claim 1, characterized in that, The method is as follows: The power supply module (01) converts the input voltage VDD into a voltage suitable for the operation of the logic control module (02) and the parameter adjustment module (03); The logic control module (02) determines the working modes of the parameter adjustment module (03), the turn-on module (04), and the turn-off module (05) according to the switching PWM signal at the input terminal Vin; The parameter adjustment module (03) adjusts the working characteristics of the parameter adjustment module (03) according to the voltage and current state information of the external parameter module (06), and further regulates the working characteristics of the turn-on module (04) and the turn-off module (05); The turn-on module (04) establishes a current charging path according to the parameter adjustment instruction transmitted by the parameter adjustment module (03), and injects current into the gate of the power MOSFET to be controlled (08) through the external gate resistor (07), so that the power MOSFET to be controlled (08) is turned on; The turn-off module (05) establishes a current discharging path according to the parameter adjustment instruction transmitted by the parameter adjustment module (03), and extracts current from the gate of the power MOSFET to be controlled (08) through the external gate resistor (07), so that the power MOSFET to be controlled (08) is turned off; The external parameter module (06) configures the resistance and capacitance values of the second resistor R2, the third resistor R3, the fourth resistor R4, the fifth resistor R5, the first capacitor C1, and the second capacitor C2 inside the external parameter module (06) according to the parasitic parameters of the power MOSFET to be controlled (08), so that the working characteristics of the parameter adjustment module (03), the turn-on module (04), and the turn-off module (05) match the parasitic parameters of the power MOSFET to be controlled (08).

3. The driving method of an adjustable universal MOSFET gate driving circuit according to claim 2, characterized in that During the turn-on process of the power MOSFET to be controlled (08), the method for the gate voltage waveform of the power MOSFET to be controlled (08) to be expressed is as follows: In the first stage, when the gate voltage of the power MOSFET to be controlled (08) is lower than the threshold voltage (Vth), the gate voltage of the power MOSFET to be controlled (08) rises rapidly; In the second stage, when the gate voltage of the power MOSFET to be controlled (08) is greater than the threshold voltage (Vth) but less than the Miller plateau voltage (Vmiller), in this stage, the gate voltage of the power MOSFET to be controlled (08) rises linearly and controllably; In the third stage, when the gate voltage of the power MOSFET to be controlled (08) is at the Miller plateau voltage (Vmiller), the gate voltage of the power MOSFET to be controlled (08) remains at the Miller plateau voltage (Vmiller); In the fourth stage, when the gate voltage of the power MOSFET to be controlled (08) is higher than the Miller plateau voltage (Vmiller), the gate voltage of the power MOSFET to be controlled (08) resumes linear and controllable rise.

4. The driving method of an adjustable universal MOSFET gate driving circuit according to claim 2, characterized in that, During the turn-off process of the power MOSFET to be controlled (08), the method of expressing the gate voltage of the power MOSFET to be controlled (08) is as follows: In the first stage, when the gate voltage of the power MOSFET to be controlled (08) is higher than the Miller plateau voltage (Vmiller), the gate voltage of the power MOSFET to be controlled (08) drops rapidly. In the second stage, when the gate voltage of the power MOSFET to be controlled (08) is at the Miller plateau voltage (Vmiller), the gate voltage of the power MOSFET to be controlled (08) is maintained at the Miller plateau voltage (Vmiller). In the third stage, when the gate voltage of the power MOSFET to be controlled (08) is lower than the Miller plateau voltage (Vmiller) but higher than the threshold voltage, the gate voltage of the power MOSFET to be controlled (08) drops slowly. In the fourth stage, when the gate voltage of the power MOSFET to be controlled (08) is lower than the threshold voltage (Vth), the gate voltage of the power MOSFET to be controlled (08) drops rapidly to zero.

5. The driving method of an adjustable universal MOSFET gate driving circuit according to claim 2, characterized in that, During the turn-off process of the power MOSFET to be controlled (08), the fifth resistor R5 in the external parameter module (06) affects the gate turn-off threshold voltage Vth of the power MOSFET to be controlled (08). The specific manifestation method is: when the resistance value of the fifth resistor R5 is larger, the gate turn-off threshold voltage Vth value of the power MOSFET to be controlled (08) is higher, and vice versa.

6. A driving method for an adjustable universal MOSFET gate driving circuit according to claim 2, characterized in that During the turn-on process of the power MOSFET to be controlled (08), the second resistor R2 and the first capacitor C1 in the external parameter module (06) affect the drain-source voltage and drain-source current waveforms. The specific manifestation method is: When the resistance value of the second resistor R2 remains unchanged, the larger the capacitance value of the first capacitor C1, the smaller the slope of the drain-source current of the power MOSFET to be controlled (08), and the smaller the absolute value of the slope of the drain-source voltage. When the capacitance value of the first capacitor C1 remains unchanged, the larger the resistance value of the second resistor R2, the smaller the slope of the drain-source current of the power MOSFET to be controlled (08), and the smaller the absolute value of the slope of the drain-source voltage.

7. The driving method of a controllable and universal MOSFET gate driving circuit according to claim 2, wherein During the turn-off process of the power MOSFET to be controlled (08), the third resistor R3, the fourth resistor R4, and the second capacitor C2 in the external parameter module (06) affect the drain-source voltage and drain-source current waveforms. The specific manifestation method is: When the resistance and capacitance values of the fourth resistor R4 and the second capacitor C2 remain unchanged, the larger the resistance value of the third resistor R3, the slope of the drain-source voltage of the power MOSFET to be controlled (08) remains unchanged, and the absolute value of the slope of the drain-source current of the power MOSFET to be controlled (08) is larger. When the resistance and capacitance values of the third resistor R3 and the second capacitor C2 remain unchanged, the larger the resistance value of the fourth resistor R4, the smaller the slope of the drain-source voltage of the power MOSFET to be controlled (08), and the smaller the absolute value of the slope of the drain-source current of the power MOSFET to be controlled (08). When the resistance values of the third resistor R3 and the fourth resistor R4 remain unchanged, the smaller the capacitance value of the second capacitor C2, the smaller the slope of the drain-source voltage of the power MOSFET to be controlled (08), and the smaller the absolute value of the slope of the drain-source current of the power MOSFET to be controlled (08).

8. The driving method of an adjustable universal MOSFET gate driving circuit according to claim 2, wherein During the turn-on process of the power MOSFET to be controlled (08), without introducing the drain-source side information of the power MOSFET to be controlled (08), by utilizing the variation characteristics of the transconductance capacitance of the power MOSFET to be controlled (08), only the gate-source of the power MOSFET to be controlled (08) is regulated, and finally the regulation of the drain-source voltage and current trajectory of the power MOSFET to be controlled (08) is completed; During the turn-off process of the power MOSFET to be controlled (08), without introducing the drain-source side information of the power MOSFET to be controlled (08), by utilizing the variation characteristics of the transconductance capacitance of the power MOSFET to be controlled (08) during the turn-off process, only the gate voltage of the power MOSFET to be controlled (08) is controlled to achieve the regulation of the drain-source voltage and current trajectory of the power MOSFET to be controlled (08); By changing the internal resistance and capacitance parameters of the external parameter module (06), the output characteristics of the adjustable universal MOSFET gate drive circuit are regulated to match the power MOSFET to be controlled (08) with different parasitic parameters; The drive circuit regulates the slopes of the drain-source voltage and current of the power MOSFET to be controlled (08) therein separately.

Images