Resistance adjustment circuit, silicon carbide device and electronic device

Abstract

The present application provides a resistance value adjustment circuit, a silicon carbide device, and an electronic device. By providing a resistance value adjustment structure, the resistance value adjustment circuit receives a start signal at the first input end of the resistance value adjustment structure to start the chip, and receives a resistance value adjustment signal at the second input end of the resistance value adjustment structure, so as to adjust the resistance value of the resistance value adjustment structure according to the resistance value adjustment signal, thereby adjusting the turn-on speed of the chip. Compared with the existing solutions, the turn-on speed of the chip is adjusted, thus solving the problem that the existing solutions lack a technical solution for adjusting the turn-on speed of a silicon carbide chip.

Description

Technical Field

[0001] The present application relates to the technical field of silicon carbide devices, and in particular, to a resistance value adjustment circuit, a silicon carbide device, and an electronic device. Background Art

[0002] Power devices are gradually developing towards high voltage and large current. On the one hand, multiple chips need to be connected in parallel inside the device to meet parameter requirements. Since the switching speed of silicon carbide chips is relatively fast, the current sharing problem among chips has become increasingly serious. In addition, multiple chips connected in parallel require multiple sets of signal-side return lines. Currently, forms such as bonding aluminum wires increase the complexity, difficulty, and failure risk of device packaging. Therefore, a more robust and intelligent signal loop module control module for the driving side needs to be designed.

[0003] At the same time, the appearance of the device needs sufficient space to meet insulation requirements (such as external creepage of high-voltage devices) and a certain specification form (such as a general-purpose 62 mm device), and the internal utilization rate of existing modules is low.

[0004] In summary, it can be seen that the existing solutions lack a technical solution for adjusting the turn-on speed of silicon carbide chips. Summary of the Invention

[0005] The main purpose of the present application is to provide a resistance value adjustment circuit, a silicon carbide device, and an electronic device, so as to at least solve the problem that the existing solutions lack a technical solution for adjusting the turn-on speed of silicon carbide chips.

[0006] To achieve the above object, according to one aspect of the present application, a resistance value adjustment circuit is provided. The resistance value adjustment circuit includes: a resistance value adjustment structure having a first input terminal, a second input terminal, and an output terminal. The output terminal of the resistance value adjustment structure is used to be electrically connected to a chip. The first input terminal of the resistance value adjustment structure is used to receive a start signal for starting the chip. The second input terminal of the resistance value adjustment structure is used to receive a resistance value adjustment signal. The resistance value adjustment structure is used to adjust the resistance value of the resistance value adjustment structure according to the resistance value adjustment signal to adjust the turn-on speed of the chip.

[0007] Optionally, the resistance value adjustment structure includes:

[0008] a microprocessor, the input terminal of the microprocessor is used to receive the resistance value adjustment signal;

[0009] a resistance value replacement module including multiple paths. The first input terminals of the paths in the resistance value replacement module are respectively electrically connected to an output terminal of the microprocessor. The second input terminals of the paths in the resistance value replacement module are all used to receive the start signal. The output terminals of the paths in the resistance value replacement module are used to be electrically connected to the chip;

[0010] The microprocessor is configured to output a high-level signal at the corresponding output terminal of the microprocessor according to the resistance value adjustment signal, so as to turn on the corresponding path in the resistance value replacement module, thereby adjusting the resistance value of the resistance value replacement module.

[0011] Optionally, each of the paths in the resistance value replacement module includes a resistor module and a transistor. The first end of the resistor module is configured to receive the start signal. The gate of the transistor is electrically connected to an output terminal in the microprocessor. The drain of the transistor is electrically connected to the second end of the resistor module. The source of the transistor is electrically connected to the chip.

[0012] Optionally, the resistance value adjustment structure further includes a transformer. The input end of the transformer is configured to receive the resistance value adjustment signal. The output end of the transformer is electrically connected to the input end of the microprocessor.

[0013] Optionally, the resistance value adjustment structure further includes a power switch device, which is electrically connected between the chip and the output end of one of the paths in the resistance value replacement module.

[0014] According to another aspect of the present application, a silicon carbide device is provided. The silicon carbide device includes a chip and any one of the resistance value adjustment circuits described above.

[0015] Optionally, the silicon carbide device further includes a flexible circuit board, a connection structure, and a liner. The flexible circuit board is electrically connected to the first input end of the resistance value adjustment structure. The flexible circuit board forms an electrical connection with the chip by using the connection structure.

[0016] Optionally, the connection structure includes an insulating material board and metal terminals. The insulating material board uses the metal terminals to form an electrical connection between the flexible circuit board and the chip.

[0017] Optionally, a groove matching a preset part of the chip is provided on the insulating material board to play an insulating role. The preset part represents the part between adjacent bonding areas on the chip.

[0018] According to another aspect of the present application, an electronic device is provided. The electronic device includes any one of the silicon carbide devices described above.

[0019] Applying the technical solution of the present application, by setting a resistance value adjustment structure, the first input end of the resistance value adjustment structure is used to receive a start signal to start the chip, and the second input end of the resistance value adjustment structure is used to receive a resistance value adjustment signal, so as to adjust the resistance value of the resistance value adjustment structure according to the resistance value adjustment signal, thereby adjusting the turn-on speed of the chip. Compared with the existing solution, the turn-on speed of the chip is adjusted, thus solving the problem that the existing solution lacks a technical solution for adjusting the turn-on speed of a silicon carbide chip. Description of the Drawings

[0020] The specification drawings forming a part of the present application are used to provide a further understanding of the present application. The schematic embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation to the present application. In the drawings:

[0021] Figure 1 Shows a schematic diagram of a resistance value adjustment circuit provided according to an embodiment of the present application;

[0022] Figure 2 Shows a schematic connection diagram of a resistance value adjustment structure and a chip provided according to an embodiment of the present application;

[0023] Figure 3 Shows a schematic connection diagram of multiple resistance value adjustment structures and a chip provided according to an embodiment of the present application;

[0024] Figure 4 Shows a first schematic diagram of a silicon carbide device provided according to an embodiment of the present application;

[0025] Figure 5 Shows a second schematic diagram of a silicon carbide device provided according to an embodiment of the present application;

[0026] Figure 6 Shows a schematic diagram of a metal terminal provided according to an embodiment of the present application;

[0027] Figure 7 Shows a schematic diagram of a product structure provided according to an embodiment of the present application.

[0028] Among them, the above-mentioned drawings include the following reference numerals:

[0029] 100, resistance value adjustment structure; 110, resistance value replacement module; 200, chip; 300, flexible circuit board; 400, insulating material board; 410, groove; 500, metal terminal; 510, upper raised ring; 520, lower raised ring; 600, lining board; 700, first terminal; 800, second terminal. Detailed Embodiments

[0030] It should be noted that, without conflict, the embodiments in the present application and the features in the embodiments may be combined with each other. The following will describe the present application in detail with reference to the accompanying drawings and in combination with the embodiments.

[0031] In order to enable those skilled in the art to better understand the solution of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

[0032] It should be noted that the terms "first", "second", etc. in the description and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and do not necessarily need to be used to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances so as to implement the embodiments of the present application described herein. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device including a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0033] As introduced in the background art, power devices are gradually developing towards high voltage and large current. On the one hand, multiple chips need to be connected in parallel inside the device to meet the parameter requirements. Since silicon carbide chips have a relatively fast switching speed, the problem of current sharing among chips has become increasingly serious. In addition, multiple chips connected in parallel require multiple sets of signal-side return lines. The current forms such as bonded aluminum wires increase the complexity, difficulty and failure risk of device packaging. Therefore, it is necessary to design a more robust and intelligent signal loop module to regulate the driving side. To solve the problem that the existing solutions lack a technical solution for adjusting the turn-on speed of silicon carbide chips, the embodiments of the present application provide a resistance value adjustment circuit, a silicon carbide device and an electronic device.

[0034] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention.

[0035] The present application provides a resistance value adjustment circuit, as Figure 1As shown, the resistance adjustment circuit includes: a resistance adjustment structure 100, which has a first input terminal, a second input terminal, and an output terminal. The output terminal of the resistance adjustment structure is used to be electrically connected to the chip. The first input terminal of the resistance adjustment structure is used to receive a start signal In1, and the start signal is used to start the chip. The second input terminal of the resistance adjustment structure is used to receive a resistance adjustment signal In2, and the resistance adjustment structure is used to adjust the resistance of the resistance adjustment structure according to the resistance adjustment signal to adjust the turn-on speed of the chip.

[0036] In the above resistance adjustment circuit, by setting the resistance adjustment structure, the start signal is received at the first input terminal of the resistance adjustment structure to start the chip, and the resistance adjustment signal is received at the second input terminal of the resistance adjustment structure, so as to adjust the resistance of the resistance adjustment structure according to the resistance adjustment signal to adjust the turn-on speed of the chip. Compared with the existing solution, the turn-on speed of the chip is adjusted, thus solving the problem that the existing solution lacks a technical solution for adjusting the turn-on speed of a silicon carbide chip.

[0037] In an embodiment of the present application, as Figure 2 shown ( Figure 2 the markings of the resistance adjustment structure are not shown, and the microprocessor and the resistance replacement module together form the resistance adjustment structure), the resistance adjustment structure includes:

[0038] A microprocessor MCU, the input terminal IN of the microprocessor is used to receive the resistance adjustment signal;

[0039] A resistance replacement module 110, including multiple paths. The first input terminals of the respective paths in the resistance replacement module are respectively electrically connected to an output terminal in the microprocessor (as Figure 2 shown, the output terminals of the MCU are OUT1, OUT2, and OUT3 in sequence). The second input terminals of the respective paths in the resistance replacement module are all used to receive the start signal, and the output terminals of the respective paths in the resistance replacement module are used to be electrically connected to the chip 200;

[0040] As Figure 3 (although Figure 3Although multiple Q4s are not shown, each chip has a corresponding Q4. As shown, there can be multiple resistance replacement modules 110, each corresponding to a chip. Then, a microprocessor can adjust the turn-on speeds of multiple chips simultaneously. That is, within a resistance adjustment structure, multiple resistance replacement modules for parallel-connected chips are set to perform independent adjustments respectively, thereby improving current sharing and weakening the effect of separately adjusting the parallel-connected chips for current sharing. By weakening the separate adjustment of the parallel-connected chips, the complexity of design and debugging can be reduced, and production efficiency can be improved. The required components and materials can be reduced, thereby lowering production costs. Reducing the complexity of adjustment and maintenance can improve the reliability of the system and reduce the failure rate. Through current sharing control, power consumption can be effectively reduced, and energy utilization efficiency can be improved. Weakening the separate adjustment of the parallel-connected chips can make the system more stable and reduce unstable situations caused by errors. Generally speaking, weakening the effect of separately adjusting the parallel-connected chips for current sharing can make the system simpler, more efficient, and more reliable.

[0041] The above-mentioned microprocessor is used to output a high-level signal at the output end corresponding to the microprocessor according to the above-mentioned resistance adjustment signal to turn on the corresponding path in the above-mentioned resistance replacement module to adjust the resistance of the above-mentioned resistance replacement module.

[0042] Specifically, multiple resistance replacement modules can be set, and each resistance replacement module is electrically connected to a power switch device respectively. The MCU calculates the control logic based on the resistance adjustment signal and the gate voltage signals of each MOS chip, thereby determining which gate resistance branches (i.e., paths) of the resistance replacement module corresponding to each MOS chip should be turned on.

[0043] The multi-layer wire band of the gate resistance branch (i.e., setting multiple paths) realizes the individual control of each chip in the power device and the free selection of the driving resistance, which not only facilitates the regulation of the parameter consistency of each chip in the power device but also can flexibly adjust the operation of each chip.

[0044] In an embodiment of the present application, each of the above-mentioned paths in the above-mentioned resistance replacement module includes a resistance module and a transistor. The first end of the resistance module is used to receive the above-mentioned start signal. The gate of the transistor is electrically connected to an output end in the above-mentioned microprocessor. The drain of the transistor is electrically connected to the second end of the resistance module. The source of the transistor is electrically connected to the above-mentioned chip.

[0045] Specifically, as Figure 2 shown, R1 and Q1 form a path, R2 and Q2 form a path, and R3 and Q3 form a path. Each path is electrically connected to an output end of the MCU respectively. Through the combination of different gate resistance branches, the gate resistance of each MOS chip can be set to different values respectively, thereby adjusting the turn-on speed of the MOS chip.

[0046] In an embodiment of the present application, as Figure 2 shown, the above resistance value adjustment structure further includes a transformer T1. The input end of the transformer is used to receive the above resistance value adjustment signal, and the output end of the transformer is electrically connected to the input end of the microprocessor.

[0047] Specifically, the transformer is used to isolate the signal.

[0048] In an embodiment of the present application, the above resistance value adjustment structure further includes a power switch device, and the power switch device is electrically connected between the output end of one of the above paths of the above chip and the above resistance replacement module.

[0049] Specifically, the power switch device can be a transistor, and its function is to provide isolation ability.

[0050] The present application also provides a silicon carbide device, as Figure 4 shown, the silicon carbide device includes a chip 200 and any one of the above resistance value adjustment circuits 100.

[0051] In the above silicon carbide device, by setting a resistance value adjustment structure, a start signal is received at the first input end of the resistance value adjustment structure to start the chip, and a resistance value adjustment signal is received at the second input end of the resistance value adjustment structure, so as to adjust the resistance value of the resistance value adjustment structure according to the above resistance value adjustment signal, so as to adjust the turn-on speed of the above chip. Compared with the existing solution, the turn-on speed of the chip is adjusted, thus solving the problem that the existing solution lacks a technical solution for adjusting the turn-on speed of a silicon carbide chip.

[0052] In an embodiment of the present application, as Figure 5 shown, the above silicon carbide device further includes a flexible circuit board 300, a connection structure (the connection structure includes an insulating material board 400 and a metal terminal 500, and the above insulating material board uses the above metal terminal to form an electrical connection between the flexible circuit board and the above chip), and a lining board 600. The flexible circuit board is electrically connected to the first input end of the resistance value adjustment structure ( Figure 5 the connection between the flexible circuit board and the resistance value adjustment structure is not shown), and the flexible circuit board uses the above connection structure to form an electrical connection with the above chip.

[0053] Specifically, the metal terminal is provided with an upper raised ring and a lower raised ring, and when installed on the PCB board, it realizes a buckling function to prevent the device from falling off between the metal terminal and the PCB board (i.e., the flexible circuit board) during movement or inversion after encapsulation.

[0054] In an embodiment of the present application, as Figure 5As shown, a groove 410 is provided on the above-mentioned insulating material board 400 to cooperate with a preset part of the above-mentioned chip 200, so as to play an insulating role (further ensuring effective isolation between adjacent first bonding areas, avoiding mutual interference of signals and currents, and enhancing the electrical performance of the chip component). The preset part represents the part between adjacent bonding areas on the above-mentioned chip for electrical isolation to prevent short circuits and improve electrical safety. The groove 410 is provided to prevent electrical conduction between the Kelvin source and the gate on the chip surface after the 400 is interconnected with the chip 200. "Kelvin" comes from the "Kelvin connection" in the circuit, which originally refers to a technology for precise measurement by avoiding the introduction of additional parasitic parameters through methods such as a four-wire system. In the application of silicon carbide devices, the "Kelvin source" refers to achieving decoupling of the power circuit and the drive circuit of the silicon carbide chip by leading out a dedicated electrical connection for the drive loop from the source of the silicon carbide chip, thereby improving the switching speed of the device and reducing losses and oscillations.

[0055] As Figure 6 shown, it shows that raised rings 510 and lower raised rings 520 are provided on the metal terminal 500, which play a buckling role when installed on the PCB board (the metal terminal can either be a discrete structure or an integral structure with the insulating material board), preventing the device from falling off between the metal terminal and the PCB board during movement or inversion after encapsulation.

[0056] As Figure 7 shown, the product structure shows a resistance adjustment structure 100, a chip 200, a flexible circuit board 300, a liner 600, a first terminal 700, and a second terminal 800. The first terminal 700 is used to receive the start signal In1, and the second terminal 800 is used to receive the resistance adjustment signal In2. The first terminal is electrically connected to the first input end of the resistance adjustment structure, and the second terminal is electrically connected to the second end of the resistance adjustment structure. A discrete metal terminal participation connection structure (i.e., the insulating material board and the metal terminal) can be realized through spiral assembly and further connected to the flexible circuit board.

[0057] This product structure realizes a wire-bondless design for the auxiliary circuit of the power device, with a more flexible layout, improving the overall reliability of the device and simplifying the packaging process.

[0058] The present application also provides an electronic device, which includes any one of the above-mentioned silicon carbide devices. By providing a resistance adjustment structure, the first input terminal of the resistance adjustment structure is used to receive a start signal to start the chip, and the second input terminal of the resistance adjustment structure is used to receive a resistance adjustment signal, so as to adjust the resistance of the resistance adjustment structure according to the above-mentioned resistance adjustment signal, thereby adjusting the turn-on speed of the chip. Compared with the existing solution, the turn-on speed of the chip is adjusted, thus solving the problem that the existing solution lacks a technical solution for adjusting the turn-on speed of a silicon carbide chip.

[0059] It should be noted that the above electrical connection can be a direct electrical connection or an indirect electrical connection. A direct electrical connection means that two devices are directly connected, and an indirect electrical connection means that there are other devices such as capacitors and resistors connected between the connected A and B.

[0060] It should also be noted that the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements not only includes those elements, but also includes other elements not expressly listed, or also includes elements inherent in such process, method, commodity or device. Without further limitation, an element defined by the statement "including a..." does not exclude the existence of another identical element in the process, method, commodity or device including the element.

[0061] From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:

[0062] 1) For the resistance adjustment circuit of the present application, by providing a resistance adjustment structure, the first input terminal of the resistance adjustment structure is used to receive a start signal to start the chip, and the second input terminal of the resistance adjustment structure is used to receive a resistance adjustment signal, so as to adjust the resistance of the resistance adjustment structure according to the above-mentioned resistance adjustment signal, thereby adjusting the turn-on speed of the chip. Compared with the existing solution, the turn-on speed of the chip is adjusted, thus solving the problem that the existing solution lacks a technical solution for adjusting the turn-on speed of a silicon carbide chip.

[0063] 2) For the silicon carbide device of the present application, by providing a resistance adjustment structure, the first input terminal of the resistance adjustment structure is used to receive a start signal to start the chip, and the second input terminal of the resistance adjustment structure is used to receive a resistance adjustment signal, so as to adjust the resistance of the resistance adjustment structure according to the above-mentioned resistance adjustment signal, thereby adjusting the turn-on speed of the chip. Compared with the existing solution, the turn-on speed of the chip is adjusted, thus solving the problem that the existing solution lacks a technical solution for adjusting the turn-on speed of a silicon carbide chip.

[0064] The above are only the preferred embodiments of the present application and are not intended to limit the present application. For those skilled in the art, various changes and modifications can be made to the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included within the protection scope of the present application.

Claims

1. A silicon carbide device, characterized in that: include: Multiple chips; A microprocessor, wherein an input terminal of the microprocessor is used to receive a resistance adjustment signal; A plurality of resistance value replacement modules, each of which corresponds to the chip one by one, each of which comprises a plurality of paths, a first input end of each of which is electrically connected to an output end of the microprocessor, a second input end of each of which is used to receive a start signal, an output end of each of which is electrically connected to one of the chips, and the start signal is used to start the chip; Wherein, when the microprocessor outputs a high-level signal according to the resistance adjustment signal, the corresponding path in the resistance changing module receiving the high-level signal is turned on; A transformer, wherein the input end of the transformer is used to receive the resistance adjustment signal, the output end of the transformer is electrically connected to the input end of the microprocessor, and the transformer is used to isolate the signal.

2. The silicon carbide device according to claim 1, characterized in that: Each of the paths in the resistance value replacement module includes a resistance module and a transistor, wherein the first end of the resistance module is used to receive the start signal, the gate of the transistor is electrically connected to an output end of the microprocessor, the drain of the transistor is electrically connected to the second end of the resistance module, and the source of the transistor is electrically connected to the chip.

3. The silicon carbide device according to claim 1, characterized in that: The resistance adjustment structure also includes a power switch device, which is electrically connected between the chip and an output end of one of the paths in the resistance change module.

4. The silicon carbide device according to claim 1, characterized in that: The silicon carbide device also includes a flexible circuit board, a connection structure and a lining plate. The flexible circuit board is electrically connected to the second input end of each of the paths in the resistance value replacement module. The flexible circuit board uses the connection structure to form an electrical connection with the chip.

5. The silicon carbide device according to claim 4, characterized in that: The connection structure includes an insulating material plate and a metal terminal, and the insulating material plate uses the metal terminal to form an electrical connection between the flexible circuit board and the chip.

6. The silicon carbide device according to claim 5, characterized in that: The insulating material plate is provided with a groove matched with a preset portion of the chip to play an insulating role, and the preset portion represents a portion between adjacent bonding areas on the chip.

7. An electronic device, characterized in that: include: A silicon carbide device as claimed in any one of claims 1 to 6.

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