Perovskite solar cell, preparation method thereof and perovskite solar cell module

Abstract

The embodiment of the invention provides a perovskite solar cell, a preparation method thereof and a perovskite solar cell module. The perovskite solar cell comprises a substrate and a transparent conductive oxide layer, wherein the transparent conductive oxide layer is provided with a plurality of first regions and second regions which are arranged in a staggered manner; a first etching groove is formed in the transparent conductive oxide layer in the first region; the insulating protection layer is positioned in the first region; the first charge transport layer, the perovskite light absorption layer and the second charge transport layer are located in the second region; the second etching groove is positioned in the insulating protection layer; the electrode layer is positioned on the second charge transmission layer and the insulation protection layer and in the second etching groove; and the third etching groove is positioned in the electrode layer of the first region. According to the technical scheme of the invention, the insulation protection layer in the perovskite solar cell can protect the perovskite light absorption layer, reduces the damage of laser scribing to the perovskite light absorption layer, and improves the stability of a perovskite solar cell module.

Description

Technical Field

[0001] The present application relates to the technical field of solar cells, and in particular to a perovskite solar cell and a preparation method thereof, and a perovskite solar cell module. Background Art

[0002] In recent years, due to the excellent optoelectronic properties and low cost advantages of organic and inorganic metal halide perovskite materials, the research on perovskite solar cell devices has been in full swing. However, compared with silicon solar cell devices, perovskite solar cell devices have poor stability.

[0003] At present, in the production process of large-area perovskite solar cell modules, four laser etchings are required, namely P1 / P2 / P3 / P4, which are essential links in the production process of perovskite solar cells. Among them, three parallel laser scribings (P1-P3) are required in the preparation process to vaporize the material and form grooves, dividing the entire film layer into sub-cells with a width of about 4-12mm connected in series, thereby forming a separate module that blocks the conduction of current to achieve the effect of increasing voltage and connecting cells in series. P4 is to remove the film layer with a width of about 10mm near the edge of the glass to form an insulating area as the back-end packaging area. However, the laser scribing process will inevitably cause perovskite sintering and form a perovskite cross-section. The cross-section has a large number of recombination centers and defect states, which will induce the continuous decomposition and degradation of perovskite, and at the same time form a crater structure on the surface of the perovskite cell, which is not conducive to the subsequent thin film preparation. In addition, after laser marking P2 and P3, the perovskite in the P2 groove is exposed to the air and can be easily destroyed and decomposed by water and oxygen in the air, which will affect the stability of the solar cell. Summary of the invention

[0004] The embodiments of the present application provide a perovskite solar cell and a method for preparing the same, and a perovskite solar cell module to solve or alleviate the technical problems mentioned above. The method for preparing the perovskite solar cell of the technical solution of the present application can protect the perovskite light absorbing layer, reduce the damage to the perovskite light absorbing layer caused by laser scribing, and improve the stability of the perovskite solar cell module.

[0005] In a first aspect, an embodiment of the present application provides a perovskite solar cell, comprising: substrate; A transparent conductive oxide layer located on the substrate, the transparent conductive oxide layer having a plurality of first regions and second regions arranged alternately; a first etching groove is provided in the transparent conductive oxide layer in the first region, the first etching groove penetrates the transparent conductive oxide layer along a first direction; an insulating protective layer located in the first area; A first charge transport layer, a perovskite light absorption layer, and a second charge transport layer are located in the second region and stacked in sequence, and the upper surface of the insulating protection layer is not lower than the upper surface of the second charge transport layer; a second etching groove located in the insulating protection layer, wherein the second etching groove is connected to the transparent conductive oxide layer; an electrode layer located on the second charge transport layer and the insulating protection layer, and in the second etching groove; a third etched groove located in the electrode layer of the first region, wherein the third etched groove at least penetrates the electrode layer along a first direction; Among them, in each of the first regions, a projection of the first side wall of the first etching groove on the substrate, a projection of the first side wall of the second etching groove on the substrate, and a projection of the first side wall of the third etching groove on the substrate are arranged in sequence along the second direction.

[0006] Optionally, a projection of the first etched groove on the substrate partially overlaps with a projection of the second etched groove on the substrate.

[0007] Optionally, a projection of the second side wall of the first etched groove on the substrate completely overlaps with a projection of the first side wall of the second etched groove on the substrate.

[0008] Optionally, a projection of the second side wall of the second etched groove on the substrate completely overlaps with a projection of the first side wall of the third etched groove on the substrate.

[0009] Optionally, the insulating protection layer has a width of 50-500 μm.

[0010] Optionally, the thickness of the insulating protective layer is 300-1200 nm.

[0011] Optionally, an upper surface of the insulating protection layer is flush with an upper surface of the second charge transport layer.

[0012] Optionally, each of the first regions has one first etching groove, and the interval between any two adjacent first etching grooves is 4-12 mm.

[0013] Optionally, the width of the first etching groove is 20-200 μm, the width of the second etching groove is 20-200 μm, and the width of the third etching groove is 20-200 μm.

[0014] Optionally, the material of the insulating protection layer includes one or more of silicon oxide, silicon nitride, silicon oxynitride, tetra-ethyl ortho-silicate, parylene, epoxy resin, poly(p-xylene), and photoresist materials.

[0015] Optionally, the longitudinal cross-section of the insulating protective layer is in the shape of a rectangle, a trapezoid, or a triangle.

[0016] In a second aspect, an embodiment of the present application provides a method for preparing a perovskite solar cell, comprising: providing a substrate; forming a transparent conductive oxide layer on the substrate, wherein the transparent conductive oxide layer has a plurality of first regions and second regions arranged alternately; Laser etching the transparent conductive oxide layer located in the first region to form a first etching groove; the first etching groove penetrates the transparent conductive oxide layer; Depositing an insulating material in the first region to form an insulating protection layer; In the second region, a first charge transport layer, a perovskite light absorption layer, and a second charge transport layer are sequentially formed, wherein the upper surface of the insulating protection layer is not lower than the upper surface of the second charge transport layer; Laser etching the insulating protection layer until the transparent conductive oxide layer is exposed to form a second etching groove; Depositing an electrode material on the second charge transport layer and the insulating protection layer and in the second etching groove to form an electrode layer; Laser etching the electrode layer located in the first region to form a third etched groove, wherein the third etched groove at least penetrates the electrode layer; Among them, in each of the first regions, a projection of the first side wall of the first etching groove on the substrate, a projection of the first side wall of the second etching groove on the substrate, and a projection of the first side wall of the third etching groove on the substrate are arranged in sequence along the second direction.

[0017] In a third aspect, an embodiment of the present application provides a perovskite solar cell module, including: a perovskite solar cell as described in any one of the above embodiments.

[0018] The above technical solution adopted in the embodiment of the present application may have the following advantages: In the preparation method of the perovskite solar cell of the embodiment of the present application, an insulating protective layer is formed on the TCO layer of the first region, and the insulating protective layer not only covers the first etching groove, but also can effectively reduce the influence of the crater of the first etching groove on the subsequent film preparation. Moreover, since the upper surface of the insulating protective layer is not lower than the upper surface of the second charge transfer layer, the perovskite light absorption layer can be sealed and protected by the insulating protective layer, and a second etching groove is formed in the insulating protective layer, and a third etching groove is formed in at least the electrode layer of the first region, so that the laser etching of the second etching groove and the third etching groove will not directly contact the perovskite light absorption layer, and the perovskite light absorption layer is prevented from being exposed to the air, and water vapor and oxygen are effectively isolated from penetrating into the perovskite light absorption layer, thereby improving the stability of the perovskite solar cell module. In addition, the second etching groove is formed by laser etching a single insulating protective layer, which is convenient for better cleaning the bottom of the second etching groove, and no other film layers and halides produced by the decomposition of perovskite will remain, which can effectively reduce the contact resistance between the electrode and the bottom TCO layer, increase the current, and help improve the efficiency of the module. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments disclosed in the present application and should not be regarded as limiting the scope of the present application.

[0020] Figure 1 is a flow chart of a method for preparing a perovskite solar cell provided by one embodiment of the present application; Figure 2-Figure 8 is a schematic diagram of various structures in a method for preparing a perovskite solar cell provided in one embodiment of the present application; Fig. 9 is a schematic structural diagram of a perovskite solar cell provided in another embodiment of the present application; Fig.10 is a schematic structural diagram of a perovskite solar cell provided by another embodiment of the present application; Fig.11 is a schematic structural diagram of a perovskite solar cell provided by another embodiment of the present application; Fig.12 This is a schematic diagram of the structure of a perovskite solar cell provided by another embodiment of the present application. Fig.13 It is a schematic diagram of the structure of the perovskite solar cell of comparative example 1 of the present application.

[0021] Description of reference numerals: 1. Substrate; 2. Transparent conductive oxide layer; 3. Insulating protective layer; 4. First charge transport layer; 5. Perovskite light absorption layer; 6. Second charge transport layer; 7. Electrode layer; P1, first etching groove; P2, second etching groove; P3, third etching groove; D1, first area; D2, second area; L1, the width of the first etching groove; L2, the width of the second etching groove; L3, the width of the third etching groove; L4, the width of the insulating protective layer; H1, the thickness of the insulating protective layer; X1, first direction; X2, second direction. DETAILED DESCRIPTION

[0022] The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings. In the accompanying drawings, for clarity, the sizes of layers, regions, elements and their relative sizes may be exaggerated. Wherein the same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions. The embodiments described below are exemplary and are only used to explain the present application, and cannot be understood as limitations on the present application. It should be noted that, in the absence of conflict, the embodiments in the present application and the features in the embodiments can be combined with each other.

[0023] like Figure 8 As shown, the embodiment of the present application provides a perovskite solar cell, comprising: Substrate 1; A transparent conductive oxide layer 2 is located on a substrate 1, wherein the transparent conductive oxide layer 2 has a plurality of first regions D1 and second regions D2 arranged alternately; a first etching groove P1 is provided in the transparent conductive oxide layer 2 in the first region D1, and the first etching groove P1 penetrates the transparent conductive oxide layer 2 along a first direction X1; An insulating protection layer 3 located in the first region D1; The first charge transport layer 4, the perovskite light absorption layer 5 and the second charge transport layer 6 are located in the second region D2 and are stacked in sequence, and the upper surface of the insulating protection layer 3 is not lower than the upper surface of the second charge transport layer 6; A second etching groove P2 is located in the insulating protection layer 3, and the second etching groove P2 is connected to the transparent conductive oxide layer 2; An electrode layer 7 located on the second charge transport layer 6 and the insulating protection layer 3 and in the second etching groove P2; A third etching groove P3 in the electrode layer 7 in the first region D1, wherein the third etching groove P3 at least penetrates the electrode layer 7 along the first direction X1; Among them, in each first area D1, the projection of the first side wall of the first etching groove P1 on the substrate 1, the projection of the first side wall of the second etching groove P2 on the substrate 1, and the projection of the first side wall of the third etching groove P3 on the substrate 1 are arranged in sequence along the second direction X2.

[0024] In the present application, the perovskite solar cell has a plurality of subcells, each of which includes a first region and a second region adjacent thereto. The first region has an insulating protective layer and cannot generate electricity, and is a dead region; the second region has a first charge transfer layer, a perovskite light absorption layer, and a second charge transfer layer, and can generate electricity, and is an effective region. The first etching groove, the second etching groove, and the third etching groove are all located in the first region. The first etching groove penetrates the transparent conductive oxide (TCO) layer to form a mutually independent TCO substrate; the electrode material is deposited in the second etching groove and contacts the TCO layer, providing a transmission channel for the positive and negative electrodes of the two adjacent subcells; the third etching groove at least penetrates the electrode layer, and there is no material filled in the third etching groove, providing a gap between the two adjacent subcells, and separating the two adjacent subcells.

[0025] In the present application, an insulating protective layer is provided on the TCO layer in the first region, and the insulating protective layer not only covers the first etching groove, but also can effectively reduce the influence of the crater of the first etching groove on the subsequent film preparation. Moreover, since the upper surface of the insulating protective layer is not lower than the upper surface of the second charge transfer layer, the perovskite light-absorbing layer can be sealed and protected by the insulating protective layer, and a second etching groove is formed in the insulating protective layer, and a third etching groove is formed in at least the electrode layer in the first region, so that the laser etching of the second etching groove and the third etching groove will not directly contact the perovskite light-absorbing layer, and the perovskite light-absorbing layer is prevented from being exposed to the air, and water vapor and oxygen are effectively isolated from penetrating into the perovskite light-absorbing layer, thereby improving the stability of the titanium ore solar cell module. In addition, the second etching groove is formed by laser etching a single insulating protective layer, which is convenient for better cleaning of the bottom of the second etching groove, and no other film layers and halides produced by the decomposition of perovskite will remain, which can effectively reduce the contact resistance between the electrode and the bottom TCO layer, increase the current, and help improve the efficiency of the module.

[0026] When forming the second etching groove, the insulating protective layer is laser etched until the TCO layer is exposed, so that the second etching groove is in direct contact with the TCO layer, which facilitates the connection of the electrode layer subsequently deposited in the second etching groove with the TCO layer, so that the positive electrode of a sub-cell is connected to the negative electrode between its adjacent sub-cells, thereby connecting the sub-cells in series. The sidewall of the second etching groove does not contact the functional layer (the first charge transport layer, the perovskite light absorption layer, and the second charge transport layer), that is, the perovskite light absorption layer is not exposed by the second etching groove.

[0027] The third etching groove at least penetrates the electrode layer, that is, Figures 8 to 9 As shown in FIG. 1 , the electrode layer 7 and the entire insulating protection layer 3 below the electrode layer 7 may be etched to form a third etching groove P3; or, as shown in FIG. Fig.10As shown, the electrode layer 7 and part of the insulating protective layer 3 under the electrode layer 7 can be etched to form a third etching groove P3; or, only the electrode layer 7 can be etched to form the third etching groove P3. When etching the electrode layer 7 and part of the insulating protective layer 3, or only etching the electrode layer 7, the third etching groove P3 will expose the insulating protective layer. Since the insulating protective layer is an insulating material, it has a dividing effect between two adjacent sub-cells. However, when the etched electrode layer is located in the second etching groove area, since there is no insulating protective layer under this part of the electrode layer, the electrode layer can only be etched until the TCO layer is exposed. The sidewalls of the third etching groove do not contact the functional layers (the first charge transport layer, the perovskite light absorption layer, and the second charge transport layer), that is, the perovskite light absorption layer is not exposed by the third etching groove.

[0028] The first sidewall of the first etching groove, the first sidewall of the second etching groove, and the first sidewall of the third etching groove refer to the sidewalls of the first etching groove, the second etching groove, and the third etching groove on the same side (for example, the left sidewall). The second sidewall of the first etching groove, the second sidewall of the second etching groove, and the second sidewall of the third etching groove refer to the sidewalls of the first etching groove, the second etching groove, and the third etching groove on the other same side (for example, the right sidewall). In each first region, the projection of the first sidewall of the first etching groove on the substrate, the projection of the first sidewall of the second etching groove on the substrate, and the projection of the first sidewall of the third etching groove on the substrate are arranged in sequence along the second direction; and in order to connect the second etching groove to the transparent conductive oxide layer, the projection of the second sidewall of the first etching groove on the substrate and the projection of the second sidewall of the second etching groove on the substrate are also arranged in sequence along the second direction. Such a configuration can divide the battery into a plurality of sub-batteries connected in series, increase the output voltage of the battery, and improve the output power of the battery. The embodiment of the present application has no special restrictions on the projection of the second side wall of the second etching groove on the substrate, and the projection of the second side wall of the third etching groove on the substrate. The projections of the two on the substrate can overlap, can be arranged along the second direction, and can be arranged in the opposite direction of the second direction without affecting the segmentation of the sub-batteries.

[0029] like Fig. 9 As shown, in some embodiments, the projection of the first etched groove P1 on the substrate 1 partially overlaps with the projection of the second etched groove P2 on the substrate 1 .

[0030] When the projection of the first etching groove on the substrate partially overlaps with the projection of the second etching groove on the substrate, the area of ​​the insulating protective layer occupied by the first etching groove and the second etching groove can be reduced, the width of the insulating protective layer can be reduced, and the width of the dead zone can be further reduced. The effective power generation area of ​​the battery can be increased, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.

[0031] In some embodiments, a projection of the second sidewall of the first etched groove on the substrate completely overlaps with a projection of the first sidewall of the second etched groove on the substrate.

[0032] When the projection of the second side wall of the first etching groove on the substrate completely overlaps with the projection of the first side wall of the second etching groove on the substrate, the projection of the first etching groove on the substrate and the projection of the second etching groove on the substrate do not overlap but are in contact with each other. Accurately controlling the area of ​​the insulating protective layer occupied by the first etching groove and the second etching groove can reduce the dead zone area, increase the proportion of the effective power generation area of ​​the battery, and improve the photoelectric conversion efficiency of the perovskite solar cell; it can also reduce unnecessary material use, reduce production costs, and improve material utilization.

[0033] In some embodiments, a projection of the second sidewall of the second etched groove on the substrate completely overlaps with a projection of the first sidewall of the third etched groove on the substrate.

[0034] If the projection of the second etching groove on the substrate partially overlaps with the projection of the third etching groove on the substrate, when forming the third etching groove, the electrode layer of the overlapping part (this part of the electrode layer is located in the second etching groove) needs to be etched away, which will not only cause material waste, but also the electrode layer of this part is thicker, and unnecessary process operations and time will be increased. When the projection of the second side wall of the second etching groove on the substrate completely overlaps with the projection of the first side wall of the third etching groove on the substrate, the projection of the second etching groove on the substrate and the projection of the third etching groove on the substrate do not overlap but are in contact, and the positions of the second etching groove and the third etching groove can be accurately controlled, which can not only reduce the dead area, increase the proportion of the effective power generation area of ​​the battery, and improve the photoelectric conversion efficiency of the perovskite solar cell; it can also reduce unnecessary material waste, reduce production costs, and improve material utilization; in addition, since when forming the third etching groove, the etched electrode layer is all located on the insulating protective layer, the thickness of this part of the electrode layer is small, the etching time is short, and the insulating protective layer below can be not etched, thereby improving work efficiency.

[0035] like Figure 8 As shown, in some embodiments, the width L4 of the insulating protection layer is 50-500 μm.

[0036] The width of the insulating protective layer is the width of the first area (i.e., the dead zone). The larger the width of the insulating protective layer, the larger the proportion of the ineffective power generation area in the battery, and the lower the efficiency of the sub-battery. Therefore, the width of the insulating protective layer needs to be reduced; however, the width of the insulating protective layer cannot be too small, at least greater than the farthest distance from the projection of the first etching groove on the substrate to the projection of the third etching groove on the substrate, otherwise it will not be possible to cover the first etching groove while having enough area to form the second etching groove and the third etching groove; when the width L4 of the insulating protective layer is controlled to 50-500μm, it is more reasonable. The width L4 of the insulating protective layer can be 50μm, 100μm, 200μm, 300μm, 400μm or 500μm.

[0037] like Figure 8 As shown, in some embodiments, the thickness H1 of the insulating protection layer is 300-1200 nm.

[0038] If the thickness of the insulating protective layer is too small, the upper surface of the insulating protective layer will be lower than the upper surface of the perovskite light absorbing layer, and the perovskite light absorbing layer cannot be completely protected. If the thickness of the insulating protective layer is too large, after the electrode material is deposited to form the electrode layer, the upper surface of the electrode layer is still lower than the upper surface of the insulating protective layer, which will cause the upper surface of the sub-cell to be uneven, affecting the subsequent packaging effect; or, it is necessary to deposit a thicker electrode layer to make the upper surface of the sub-cell flush, which will not only cause material waste and increase production costs, but also increase the thickness of the perovskite solar cell. It should be noted that the total thickness of the first charge transport layer, the perovskite light absorbing layer and the second charge transport layer is less than or equal to the thickness H1 of the insulating protective layer. Specifically, the thickness H1 of the insulating protective layer is 300nm, 500nm, 700nm, 800nm, 1000nm or 1200nm.

[0039] In some embodiments, an upper surface of the insulating protection layer is flush with an upper surface of the second charge transport layer.

[0040] When the upper surface of the insulating protection layer is flush with the upper surface of the second charge transport layer, when the electrode material is deposited on the upper surfaces of both, it is easy to form an electrode layer with a flat surface, which is beneficial to subsequent packaging operations and improves the packaging effect.

[0041] In some embodiments, each first region has a first etched groove, and the interval between any two adjacent first etched grooves is 4-12 mm.

[0042] According to actual production needs, the interval between any two adjacent first etched grooves is controlled to be 4-12 mm, and the battery can be divided into a required number of sub-batteries connected in series, thereby increasing the voltage, improving the output voltage and overall efficiency of the battery. Specifically, the interval between any two adjacent first etched grooves can be 4 mm, 8 mm, 10 mm or 12 mm.

[0043] like Figure 8 As shown, in some embodiments, the width L1 of the first etched groove is 20-200 μm, the width L2 of the second etched groove is 20-200 μm, and the width L3 of the third etched groove is 20-200 μm.

[0044] In practical applications, the widths L3 of the first etching groove, the second etching groove and the third etching groove can be adjusted according to requirements. Specifically, the width L1 of the first etching groove can be 20 μm, 50 μm, 100 μm, 150 μm or 200 μm; the width L2 of the second etching groove can be 20 μm, 50 μm, 100 μm, 150 μm or 200 μm; the width L3 of the third etching groove can be 20 μm, 50 μm, 100 μm, 150 μm or 200 μm.

[0045] In some embodiments, the material of the insulating protective layer includes one or more of silicon oxide, silicon nitride, silicon oxynitride, tetra-ethyl ortho-silicate, parylene, epoxy resin, poly(p-xylene), and photoresist materials.

[0046] In some embodiments, the photoresist material includes a film-forming resin, a photosensitive compound, and a solvent. The film-forming resin includes styrene-type resin, epoxy-type resin, polyimide-type resin, and hydrogenated styrene-type resin; the photosensitive compound includes polyimide; and the solvent includes one or more of N,N'-dimethylacetamide, N,N'-dimethylformamide, N-methylpyrrolidone, dimethyl sulfoxide, and γ-butyrolactone. The photoresist material undergoes a photochemical reaction and is exposed and developed to prepare a desired specific shape.

[0047] like Figures 10 to 12 As shown, in some embodiments, the longitudinal cross-section of the insulating protection layer 3 is a rectangle, a trapezoid, or a triangle.

[0048] By adjusting the etching process and etching speed, the longitudinal cross-section of the insulating protective layer can be made rectangular, trapezoidal or triangular. When the longitudinal cross-section of the insulating protective layer is a trapezoidal or triangular shape with a narrow top and a wide bottom, it is more conducive to covering the film layer, can better fit the perovskite light absorbing layer, and is conducive to protecting the perovskite light absorbing layer.

[0049] like Figure 1 As shown, the embodiment of the present application provides a method for preparing a perovskite solar cell, comprising: S100: providing a substrate; S200: forming a transparent conductive oxide layer on a substrate, wherein the transparent conductive oxide layer has a plurality of first regions and second regions arranged alternately; S300: laser etching the transparent conductive oxide layer located in the first region to form a first etching groove; the first etching groove penetrates the transparent conductive oxide layer; S400: depositing an insulating material in the first region to form an insulating protection layer; S500: sequentially forming a stacked first charge transport layer, a perovskite light absorption layer, and a second charge transport layer in the second region, wherein an upper surface of the insulating protection layer is not lower than an upper surface of the second charge transport layer; S600: laser etching the insulating protection layer until the transparent conductive oxide layer is exposed to form a second etching groove; S700: depositing an electrode material on the second charge transport layer and the insulating protection layer and in the second etching groove to form an electrode layer; S800: laser etching the electrode layer located in the first region to form a third etched groove, wherein the third etched groove at least penetrates the electrode layer; In each first region, a projection of a first side wall of the first etched groove on the substrate, a projection of a first side wall of the second etched groove on the substrate, and a projection of a first side wall of the third etched groove on the substrate are arranged in sequence along the second direction.

[0050] like Figure 2 As shown, step S100 is first performed to provide a substrate 1; then step S200 is performed to form a transparent conductive oxide layer 2 on the substrate 1, wherein the transparent conductive oxide layer 2 has a plurality of first regions D1 and second regions D2 that are alternately arranged.

[0051] In an optional embodiment, in step S100, the substrate may be cleaned, laser etched, and ultraviolet treated. The step of cleaning the substrate may include: placing the substrate in an ultrasonic cleaning instrument, and ultrasonically cleaning it with deionized water, isopropanol, and ethanol, respectively, and the cleaning time of each step is 20-40 minutes. The step of ultraviolet treating the substrate may include: treating the substrate with a UV-zone, wherein the treatment time is 20-40 minutes.

[0052] In an optional embodiment, in step S200, the material of the transparent conductive oxide layer includes but is not limited to indium tin oxide (ITO), indium zinc oxide (IZO), zinc tin oxide, tungsten oxide, and fluorine-doped tin oxide (FTO). The transparent conductive oxide layer can be prepared by vacuum evaporation, magnetron sputtering, atomic layer deposition, or chemical vapor deposition.

[0053] like Figure 3 As shown, step S300 is performed to laser-etch the transparent conductive oxide layer 2 located in the first area D1 to form a first etching groove P1 , and the first etching groove P1 penetrates the transparent conductive oxide layer 2 .

[0054] like Figure 4As shown, step S400 is performed to deposit insulating material in the first region D1 to form an insulating protection layer 3. The insulating protection layer 3 completely covers the first etching groove P1, which can effectively reduce the impact of the crater of the first etching groove P1 on subsequent film preparation.

[0055] In an optional embodiment, in step S400, an insulating material may be deposited in the first region and the second region (i.e., the TCO layer and the first etching groove region) by atomic layer deposition or chemical vapor deposition, and then etching (wet etching, dry etching or laser etching) is used to remove the insulating material in the second region, and the insulating material in the first region is retained to form an insulating protective layer. Alternatively, the second region may be directly shielded by adding a mask, and the insulating material may be directly deposited in the first region to form an insulating protective layer, wherein the method for depositing the insulating material includes but is not limited to atomic layer deposition, chemical vapor deposition, physical vapor deposition or printing.

[0056] like Figure 5 As shown, step S500 is performed to sequentially form a stacked first charge transport layer 4, a perovskite light absorption layer 5, and a second charge transport layer 6 in the second region D2, and the upper surface of the insulating protection layer 3 is not lower than the upper surface of the second charge transport layer 6. Since the upper surface of the insulating protection layer is not lower than the upper surface of the second charge transport layer, the perovskite light absorption layer can be sealed and protected by the insulating protection layer, and when the second etching groove and the third etching groove are subsequently formed, damage to the perovskite light absorption layer by laser etching is avoided.

[0057] In step S500, when the first charge transport layer is a hole transport layer, the second charge transport layer is an electron transport layer; when the first charge transport layer is an electron transport layer, the second charge transport layer is a hole transport layer.

[0058] In an optional embodiment, the material of the hole transport layer includes but is not limited to 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Sprio-OMeTAD), poly(bis(4-phenyl)(2,4,6-trimethylphenyl)amine) (PTAA), polymer of 3-hexylthiophene (P3HT), poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid (PEDOT:PSS), 2,2',7,7'-tetrakis(di-p-tolylamino)spiro-9,9'-bifluorene (Spiro-TTB), nickel oxide (NiO x), tin dioxide (SnO2), cuprous thiocyanate (CuSCN), copper aluminate (CuAlO2), vanadium pentoxide (V2O5), cadmium sulfide (CdS), cadmium selenide (CdSe) or one or more thereof. In an optional embodiment, the hole transport layer material is first added to a diluent for dilution to prepare a hole transport material solution, and then the hole transport layer is prepared by spin coating, vacuum evaporation, magnetron sputtering, atomic layer deposition, etc., wherein the diluent includes one or both of ethanol and isopropanol. The thickness of the hole transport layer can be 10-50nm.

[0059] In an optional embodiment, the material of the electron transport layer includes but is not limited to TiO2, SnO2, ZnO, ZrO2, gallium zinc oxide (GZO), indium zinc oxide (IZO), fluorine-doped tin oxide (FTO), indium tin oxide (ITO), BaSnO3, TiSnO x SnZnO x , fullerene, fullerene derivatives, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) or more. Exemplarily, fullerene can be selected from C 60 , C 70 One or two of the above, the fullerene derivative can be PCBM (such as [6,6]-phenyl-C61-butyric acid isomethyl ester, [6,6]-phenyl-C71-butyric acid isomethyl ester). The electron transport layer can be prepared by slit coating, vacuum evaporation, magnetron sputtering, atomic layer deposition and other methods. The thickness of the electron transport layer can be 30-200nm.

[0060] In an optional embodiment, the perovskite light-absorbing layer includes a perovskite material, and the perovskite material has an ABX3 structure; wherein A is a monovalent cation, including a mixture of one or several monovalent cations of cesium, rubidium, methylamine, and methylammonium; B is a divalent cation, including a mixture of one or several divalent cations of lead, copper, zinc, gallium, tin, and calcium; and X is a monovalent anion, including a mixture of one or several monovalent anions of iodine, bromine, and chlorine.

[0061] In an optional embodiment, a one-step vacuum method or a two-step vacuum method can be used to form a perovskite light-absorbing layer on the first charge transport layer. The one-step vacuum method includes: using multi-source evaporation to co-evaporate metal halides and organic halides onto a substrate to form a mixed film, and then generating a perovskite film through annealing. The two-step vacuum method includes: evaporating metal halides and organic halides in sequence, and generating a perovskite film after annealing. The metal halides include but are not limited to one or more of PbI2, PbCl2, PbBr2, RbCl, CsI, CsCl, and CsBr, and the organic halides include but are not limited to one or more of MAI (methylammonium iodide), FAI (formamidine hydroiodide), MABr (methylammonium bromide), FABr (formamidine hydrobromide), MACl (methylammonium chloride), and FACl (formamidine hydrochloride). The annealing process for preparing the perovskite light-absorbing layer can adopt direct annealing or step annealing; wherein, the temperature of direct annealing can be 100-500°C, and the time can be 1-30 minutes; step annealing includes primary annealing and secondary annealing, the temperature of primary annealing can be 25-100°C, the time can be 1-30 minutes, and the temperature of secondary annealing can be 100-500°C, and the time can be 1-30 minutes.

[0062] like Figure 6 As shown, step S600 is performed to laser etch the insulating protection layer 3 until the transparent conductive oxide layer 2 is exposed, thereby forming a second etching groove P2.

[0063] When forming the second etched groove, the insulating protective layer is laser etched until the TCO layer is exposed, so that the second etched groove is in direct contact with the TCO layer, which facilitates the connection between the electrode layer subsequently deposited in the second etched groove and the TCO layer, so that the positive electrode of a sub-battery is connected to the negative electrode between its adjacent sub-battery, thereby connecting the sub-batteries in series.

[0064] like Figure 7 As shown, step S700 is performed to deposit electrode material on the second charge transport layer 6 and the insulating protection layer 3 and in the second etching groove P2 to form an electrode layer 7.

[0065] In an optional embodiment, in step S700, the electrode material includes but is not limited to one or more of Au, Ag, Al, Cu, and transparent conductive oxide (TCO). The electrode layer can be prepared by thermal evaporation, vacuum evaporation, sputtering, atomic layer deposition, electron beam evaporation, etc. The electrode layer is removed from the second etching groove area, and the thickness of the electrode layer is 50-200nm. This is because the thickness of the electrode layer in the second etching groove is equal to the thickness of the insulating protective layer, so the thickness of the electrode layer in the second etching area is relatively large, greater than 200nm.

[0066] like Figure 8As shown, step S800 is executed to laser etch the electrode layer 7 located in the first area D1 to form a third etching groove P3, and the third etching groove P3 at least penetrates the electrode layer 7; wherein, in each first area D1, the projection of the first side wall of the first etching groove P1 on the substrate 1, the projection of the first side wall of the second etching groove P2 on the substrate 1, and the projection of the first side wall of the third etching groove P3 on the substrate 1 are arranged in sequence along the second direction X2.

[0067] The following specific examples further illustrate the present application, but should not be construed as limiting the present application. Without departing from the spirit and substance of the present application, modifications or replacements made to the methods, steps or conditions of the present application are within the scope of the present application.

[0068] Example 1 like Figure 8 As shown, the structure of the perovskite solar cell of Example 1 includes: Substrate 1; A transparent conductive oxide layer 2 is located on a substrate 1, wherein the transparent conductive oxide layer 2 has a plurality of first regions D1 and second regions D2 arranged alternately; a first etching groove P1 is provided in the transparent conductive oxide layer 2 in the first region D1, and the first etching groove P1 penetrates the transparent conductive oxide layer 2 along a first direction X1; An insulating protection layer 3 located in the first region D1; The first charge transport layer 4 (hole transport layer), the perovskite light absorption layer 5 and the second charge transport layer 6 (electron transport layer) are located in the second region D2 and are stacked in sequence, and the upper surface of the insulating protection layer 3 is not lower than the upper surface of the second charge transport layer 6; A second etching groove P2 is located in the insulating protection layer 3, and the second etching groove P2 is connected to the transparent conductive oxide layer 2; wherein the projection of the second etching groove P2 on the substrate 1 is located on one side of the projection of the first etching groove P1 on the substrate 1, and the projection of the second etching groove P2 on the substrate 1 does not overlap or contact the projection of the first etching groove P1 on the substrate 1; An electrode layer 7 located on the second charge transport layer 6 and the insulating protection layer 3 and in the second etching groove P2; A third etching groove P3 in the electrode layer 7 in the first region D1, the third etching groove P3 penetrating the electrode layer 7 and the insulating protection layer 3 along the first direction X1; wherein the third etching groove P3 is located on a side of the second etching groove P2 away from the first etching groove P1, and a projection of the third etching groove P3 on the substrate 1 does not overlap or contact a projection of the second etching groove P2 on the substrate 1; Among them, in each first area D1, the projection of the first side wall of the first etching groove P1 on the substrate 1, the projection of the first side wall of the second etching groove P2 on the substrate 1, and the projection of the first side wall of the third etching groove P3 on the substrate 1 are arranged in sequence along the second direction X2.

[0069] like Figures 1 to 8 As shown, the method for preparing a perovskite solar cell of Example 1 comprises: S110: providing a substrate 1; S210: forming a transparent conductive oxide layer 2 with a thickness of 100 nm on the substrate 1 by a magnetron sputtering method, wherein the transparent conductive oxide layer 2 has a plurality of first regions D1 and second regions D2 arranged alternately; S310: using a 532 nm laser to etch the transparent conductive oxide layer 2 located in the first area D1 to form a first etching groove P1 with a width L1 of 25 μm, wherein the first etching groove P1 penetrates the transparent conductive oxide layer 2; S410: depositing insulating material in the first region D1 and the second region D2 (i.e., the TCO layer and the first etching groove P1 region) by atomic layer deposition; then removing the insulating material in the second region D2 by wet etching, retaining the insulating material in the first region D1, and forming an insulating protection layer 3 with a width L4 of 120 μm and a thickness H1 of 1 μm; S510: Using magnetron sputtering, NiO x Depositing on the second region D2 to form a first charge transport layer 4 with a thickness of 18 nm; A vacuum two-step evaporation method is used to first evaporate a 400 nm thick lead iodide film on the first charge transport layer 4, and then evaporate a layer of an organic halide film including FAI+MAI+MACl on the lead iodide film, followed by annealing at 150° C. for 15 min to form a perovskite light absorbing layer 5; Using vacuum evaporation method, C 60 and BCP are deposited on the perovskite light absorbing layer 5 to form a second charge transport layer 6 with a thickness of 30 nm; Wherein, the upper surface of the insulating protection layer 3 is not lower than the upper surface of the second charge transport layer 6; S610: using a 532 nm laser to etch the insulating protection layer 3 until the transparent conductive oxide layer 2 is exposed, to form a second etching groove P2 with a width L2 of 30 μm; wherein the projection of the second etching groove P2 on the substrate 1 is located on one side of the projection of the first etching groove P1 on the substrate 1, and the projection of the second etching groove P2 on the substrate 1 does not overlap or contact the projection of the first etching groove P1 on the substrate 1; S710: using vacuum evaporation method, copper is deposited on the second charge transport layer 6 and the insulating protection layer 3, and in the second etching groove P2, to form an electrode layer 7; wherein the thickness of the electrode layer 7 on the second charge transport layer 6 and the insulating protection layer 3 is 100 nm; S810: Use red laser to etch the electrode layer 7 and the insulating protection layer 3 located in the first area D1 to form a third etching groove P3 with a width L3 of 30 μm, and the third etching groove P3 penetrates the electrode layer 7 and the insulating protection layer 3; wherein, the third etching groove P3 is located on the side of the second etching groove P2 away from the first etching groove P1, and the projection of the third etching groove P3 on the substrate 1 neither overlaps nor touches the projection of the second etching groove P2 on the substrate 1.

[0070] Example 2 like Fig. 9 As shown, the structure of the perovskite solar cell of Example 2 is similar to that of the perovskite solar cell of Example 1, and the only difference is that, in the perovskite solar cell of Example 2, the projection of the second etching groove P2 on the substrate 1 partially overlaps with the projection of the first etching groove P1 on the substrate 1; the third etching groove P3 is located on the side of the second etching groove P2 away from the first etching groove P1, and the projection of the third etching groove P3 on the substrate 1 does not overlap with the projection of the second etching groove P2 on the substrate 1 but contacts.

[0071] The method for preparing the perovskite solar cell of Example 2 is similar to the method for preparing the perovskite solar cell of Example 1, except that, in the method for preparing the perovskite solar cell of Example 2, In step S410, the insulating protection layer is formed with a width L4 of 70 μm and a thickness H1 of 1 μm; In step S610, the projection of the second etched groove on the substrate partially overlaps with the projection of the first etched groove on the substrate; In step S810, the third etching groove is located on a side of the second etching groove away from the first etching groove, and a projection of the third etching groove on the substrate does not overlap but contacts with a projection of the second etching groove on the substrate.

[0072] Example 3 like Fig.10 As shown, the structure of the perovskite solar cell of Example 3 is similar to that of the perovskite solar cell of Example 1, and the only difference is that, in the perovskite solar cell of Example 3, the third etching groove P3 only penetrates the electrode layer 7 and does not penetrate the insulating protection layer 3.

[0073] The method for preparing the perovskite solar cell of Example 3 is similar to the method for preparing the perovskite solar cell of Example 1, except that, in the method for preparing the perovskite solar cell of Example 3, In step S810, the electrode layer and part of the insulating protection layer located in the first region are etched with a red laser to form a third etched groove with a width L3 of 30 μm. The third etched groove only penetrates the electrode layer.

[0074] In order to more clearly illustrate the technical effects of the embodiments of the present application, the present application also points out the structure and preparation method of the perovskite solar cell of Comparative Example 1.

[0075] Comparative Example 1 like Fig.13 As shown, the structure of the perovskite solar cell of Comparative Example 1 includes: Substrate 1; A transparent conductive oxide layer 2 is located on a substrate 1, wherein the transparent conductive oxide layer 2 has a plurality of first regions and second regions arranged alternately; a first etching groove P1 is provided in the transparent conductive oxide layer 2 in the first region, and the first etching groove P1 penetrates the transparent conductive oxide layer 2 along a thickness direction; A first charge transport layer 4 (hole transport layer), a perovskite light absorption layer 5 and a second charge transport layer 6 (electron transport layer) are sequentially stacked on the transparent conductive oxide layer 2; A second etching groove P2 located in the first region and penetrating the first charge transport layer 4, the perovskite light absorption layer 5 and the second charge transport layer 6, the second etching groove P2 being connected to the transparent conductive oxide layer 2; wherein the projection of the second etching groove P2 on the substrate 1 is located on one side of the projection of the first etching groove P1 on the substrate 1, and the projection of the second etching groove P2 on the substrate 1 and the projection of the first etching groove P1 on the substrate 1 neither overlap nor contact; an electrode layer 7 located on the second charge transport layer 6 and in the second etching groove P2; A third etching groove P3 is located in the first area and passes through the electrode layer 7, the first charge transport layer 4, the perovskite absorption layer 5 and the second charge transport layer 6; wherein the third etching groove P3 is located on the side of the second etching groove P2 away from the first etching groove P1, and the projection of the third etching groove P3 on the substrate 1 neither overlaps nor contacts the projection of the second etching groove P2 on the substrate 1.

[0076] The method for preparing a perovskite solar cell of Comparative Example 1 comprises: S120: providing a substrate; S220: forming a transparent conductive oxide layer with a thickness of 100 nm on the substrate by a magnetron sputtering method; S320: etching the transparent conductive oxide layer using a 532 nm laser to form a first etching groove with a width of 25 μm, wherein the first etching groove penetrates the transparent conductive oxide layer; S420: Using magnetron sputtering, NiO xDepositing on the transparent conductive oxide layer, a first charge transport layer (hole transport layer) having a thickness of 18 nm is formed; A vacuum two-step evaporation method was used to first evaporate a 400nm thick lead iodide film on the hole transport layer, and then evaporate a layer of organic halide film including FAI+MAI+MACl on the lead iodide film, followed by annealing at 150℃ for 15min to form a perovskite light-absorbing layer. Using vacuum evaporation method, C 60 and BCP are deposited on the perovskite light-absorbing layer to form a first charge transport layer (electron transport layer) with a thickness of 30 nm; S520: using a 532 nm laser to etch the first charge transport layer, the perovskite light absorption layer, and the second charge transport layer until the transparent conductive oxide layer is exposed, thereby forming a second etching groove with a width of 30 μm; wherein a projection of the second etching groove on the substrate is located on one side of a projection of the first etching groove on the substrate, and the projection of the second etching groove on the substrate does not overlap or contact the projection of the first etching groove on the substrate; S620: using a vacuum evaporation method to deposit copper on the second charge transport layer and in the second etching groove to form an electrode layer; wherein the thickness of the electrode layer on the second charge transport layer is 100 nm; S720: using a red laser to etch the electrode layer, the first charge transport layer, the perovskite light absorption layer and the second charge transport layer located in the first region until the transparent conductive oxide layer is exposed, thereby forming a third etching groove with a width of 30 μm; wherein the third etching groove is located on a side of the second etching groove away from the first etching groove, and a projection of the third etching groove on the substrate neither overlaps nor contacts with a projection of the second etching groove on the substrate.

[0077] The present application also provides a perovskite solar cell assembly, comprising: the perovskite solar cell of any one of the above embodiments.

[0078] In some embodiments, a method for preparing a perovskite solar cell module comprises: The deposited film at the edge of the perovskite solar cell of any one of the above embodiments is removed by laser etching to form an insulating region; and packaging is performed to obtain a perovskite solar cell.

[0079] Laser etching is performed before packaging to remove the deposited film at the edge of the battery to prevent leakage and ensure the packaging reliability of the perovskite solar cell.

[0080] The present application adopts laser etching to remove the deposited films at the edges of the perovskite solar cells of Examples 1-3 and Comparative Example 1, respectively, to form insulating regions; and respectively encapsulates them to obtain corresponding perovskite solar cell modules.

[0081] The following is a performance test of the perovskite solar cell modules of Examples 1-3 of the present application and Comparative Example 1, so as to obtain the open circuit voltage Voc, short circuit current density Jsc, fill factor FF, and photoelectric conversion efficiency PCE of each battery module. The test results are shown in Table 1.

[0082] Table 1

[0083] It can be seen from the data in Table 1 that compared with Comparative Example 1, the filling factor and photoelectric conversion efficiency of the perovskite solar cell modules of Examples 1-3 of the present application are significantly improved; this indicates that the addition of the insulating protective layer is beneficial to eliminating the influence of laser etching on the perovskite light absorbing layer and other film layers; compared with Example 1, the short-circuit current density and photoelectric conversion efficiency of the perovskite solar cell module of Example 2 are greatly improved, which indicates that the dead zone area is reduced, the light-emitting area is expanded, which helps to increase the current and has a positive effect on improving the photoelectric conversion efficiency; compared with Example 1, Example 3 mainly simplifies the laser etching process of the third etching groove, and its short-circuit current density, open-circuit voltage, filling factor and photoelectric conversion efficiency are slightly improved, which indicates that the difference in the structure has little effect on the device.

[0084] In summary, in the preparation method of the perovskite solar cell of the embodiment of the present application, an insulating protective layer is formed on the TCO layer of the first region, and the insulating protective layer not only covers the first etching groove, but also can effectively reduce the influence of the crater of the first etching groove on the subsequent film preparation. Moreover, since the upper surface of the insulating protective layer is not lower than the upper surface of the second charge transfer layer, the perovskite light absorption layer can be sealed and protected by the insulating protective layer, and a second etching groove is formed in the insulating protective layer, and a third etching groove is formed in at least the electrode layer of the first region, so that the laser etching of the second etching groove and the third etching groove will not directly contact the perovskite light absorption layer, and the perovskite light absorption layer is prevented from being exposed to the air, and water vapor and oxygen are effectively isolated from penetrating into the perovskite light absorption layer, thereby improving the stability of the perovskite solar cell module. In addition, the second etching groove is formed by laser etching a single insulating protective layer, which is convenient for better cleaning the bottom of the second etching groove, and no other film layers and halides produced by the decomposition of perovskite will remain, which can effectively reduce the contact resistance between the electrode and the bottom TCO layer, increase the current, and help improve the efficiency of the module.

[0085] The embodiment of the present application can provide a photovoltaic system, including the perovskite solar cell module in the above embodiment. The advantages of the above perovskite solar cell module are also possessed by the photovoltaic system, which will not be repeated here. The above photovoltaic system has a wide range of applications, not only limited to photovoltaic power stations, such as ground power stations, rooftop power stations and water power stations, but also includes various equipment and devices that use solar energy to generate electricity, such as user solar power supplies, solar street lights, solar cars and solar buildings. Of course, it can be understood that the application scenarios of the photovoltaic system are not limited to this, that is to say, the photovoltaic system can be used in all fields where solar energy is required for power generation. Taking the photovoltaic power generation system network as an example, the photovoltaic system may include a photovoltaic array, a junction box and an inverter. The photovoltaic array may be an array combination of multiple perovskite solar cell modules. For example, multiple perovskite solar cell modules can form multiple photovoltaic arrays, and the photovoltaic array is connected to the junction box. The junction box can converge the current generated by the photovoltaic array, and the converged current flows through the inverter to convert it into the alternating current required by the mains power grid and then connects to the mains network to realize solar power supply.

[0086] It should be noted that the terms "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc. are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. The orientation words "inside" and "outside" refer to the inside and outside relative to the outline of each component itself. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Therefore, the exemplary term "above..." can include both "above..." and "below..." orientations. The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used here are interpreted accordingly.

[0087] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the terms used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein, for example. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0088] It should also be noted that "one embodiment", "another embodiment", "embodiment", etc. mentioned in this application refer to the specific features, structures or characteristics described in conjunction with the embodiment included in at least one embodiment generally described in this application. The same expression appearing in multiple places in the specification does not necessarily refer to the same embodiment. Further, when describing a specific feature, structure or characteristic in conjunction with any embodiment, it is claimed that the realization of such feature, structure or characteristic in conjunction with other embodiments also falls within the scope of this application.

[0089] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0090] It should also be noted that the above are only preferred embodiments of the present application, and the patent protection scope of the present application is not limited thereto. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly used in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A perovskite solar cell, characterized in that: include: substrate; A transparent conductive oxide layer located on the substrate, the transparent conductive oxide layer having a plurality of first regions and second regions arranged alternately; A first etching groove is provided in the transparent conductive oxide layer in the first region, and the first etching groove penetrates the transparent conductive oxide layer along a first direction; an insulating protective layer located in the first area; A first charge transport layer, a perovskite light absorption layer, and a second charge transport layer are located in the second region and stacked in sequence, and the upper surface of the insulating protection layer is not lower than the upper surface of the second charge transport layer; a second etching groove located in the insulating protection layer, wherein the second etching groove is connected to the transparent conductive oxide layer; an electrode layer located on the second charge transport layer and the insulating protection layer, and in the second etching groove; a third etched groove located in the electrode layer of the first region, wherein the third etched groove at least penetrates the electrode layer along a first direction; Among them, in each of the first regions, a projection of the first side wall of the first etching groove on the substrate, a projection of the first side wall of the second etching groove on the substrate, and a projection of the first side wall of the third etching groove on the substrate are arranged in sequence along the second direction.

2. The perovskite solar cell according to claim 1, characterized in that A projection of the first etched groove on the substrate partially overlaps with a projection of the second etched groove on the substrate.

3. The perovskite solar cell according to claim 1, characterized in that A projection of the second side wall of the first etched groove on the substrate completely overlaps with a projection of the first side wall of the second etched groove on the substrate.

4. The perovskite solar cell according to claim 1, characterized in that: A projection of the second side wall of the second etched groove on the substrate completely overlaps with a projection of the first side wall of the third etched groove on the substrate.

5. The perovskite solar cell according to any one of claims 1 to 4, characterized in that: The width of the insulating protection layer is 50-500 μm.

6. The perovskite solar cell according to any one of claims 1 to 4, characterized in that: The thickness of the insulating protection layer is 300-1200nm.

7. The perovskite solar cell according to any one of claims 1 to 4, characterized in that: An upper surface of the insulating protection layer is flush with an upper surface of the second charge transport layer.

8. The perovskite solar cell according to any one of claims 1 to 4, characterized in that: Each of the first regions has one first etching groove, and the interval between any two adjacent first etching grooves is 4-12 mm.

9. The perovskite solar cell according to any one of claims 1 to 4, characterized in that: The width of the first etching groove is 20-200 μm, the width of the second etching groove is 20-200 μm, and the width of the third etching groove is 20-200 μm.

10. The perovskite solar cell according to any one of claims 1 to 4, characterized in that: The material of the insulating protection layer includes one or more of silicon oxide, silicon nitride, silicon oxynitride, tetra-ethyl ortho-silicate, parylene, epoxy resin, poly(p-xylene), and photoresist materials.

11. The perovskite solar cell according to any one of claims 1 to 4, characterized in that: The longitudinal cross-section of the insulating protection layer is in a shape of a rectangle, a trapezoid, or a triangle.

12. A method for preparing a perovskite solar cell, characterized in that: include: providing a substrate; forming a transparent conductive oxide layer on the substrate, wherein the transparent conductive oxide layer has a plurality of first regions and second regions arranged alternately; Laser etching the transparent conductive oxide layer located in the first region to form a first etching groove; the first etching groove penetrates the transparent conductive oxide layer; Depositing an insulating material in the first region to form an insulating protection layer; In the second region, a first charge transport layer, a perovskite light absorption layer, and a second charge transport layer are sequentially formed, wherein the upper surface of the insulating protection layer is not lower than the upper surface of the second charge transport layer; Laser etching the insulating protection layer until the transparent conductive oxide layer is exposed to form a second etching groove; Depositing an electrode material on the second charge transport layer and the insulating protection layer and in the second etching groove to form an electrode layer; Laser etching the electrode layer located in the first region to form a third etched groove, wherein the third etched groove at least penetrates the electrode layer; Among them, in each of the first regions, a projection of the first side wall of the first etching groove on the substrate, a projection of the first side wall of the second etching groove on the substrate, and a projection of the first side wall of the third etching groove on the substrate are arranged in sequence along the second direction.

13. A perovskite solar cell module, characterized in that: include: The perovskite solar cell according to any one of claims 1 to 11.

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