Preparation method of functional layer in perovskite solar cell

Abstract

The invention provides a preparation method of a functional layer in a perovskite solar cell. The preparation method comprises the steps that a precursor solution of a functional layer is placed in a groove of conveying equipment, the groove is provided with a first side wall and a second side wall which are opposite, a conveying shaft is arranged between the first side wall and the second side wall, the conveying equipment is provided with a substrate and the conveying shaft, and the surface of one side of the substrate is provided with the groove; a semiconductor substrate is placed on a conveying shaft and makes contact with the precursor solution, and under the condition that the conveying shaft is in a moving state, the semiconductor substrate moves from a first position of the precursor solution located in the groove to a second position, so that a precursor film is formed on one side of the semiconductor substrate; and performing heat treatment on the precursor film to form a functional layer. According to the invention, the functional layer which is high in thickness uniformity and completely covers the whole surface area of one side of the semiconductor substrate can be formed, and the problem that the quality of a finished perovskite solar cell product is poor in the prior art is solved.

Description

Technical Field

[0001] The present invention relates to the technical field of perovskite solar cells, and in particular to a method for preparing a functional layer in a perovskite solar cell, a method for preparing a perovskite solar cell, and a perovskite solar cell. Background Art

[0002] The preparation of large-area perovskite solar cells (the illuminated area is usually more than tens of square centimeters) is the current research focus and an important indicator for the mass production of perovskite tandem cells. At present, the main methods for preparing large-area perovskite tandem cells are scraping and slit coating, but due to the large area of ​​perovskite solar cells in industrial applications, the precursor solution coated on the substrate is uneven or cannot completely cover the entire substrate, which will lead to poor quality of the finished product of the overall processed perovskite solar cell.

[0003] In addition, in perovskite tandem solar cells, since the bottom cells of tandem perovskite solar cells with good performance mostly adopt a velvet structure, the existing method of preparing large-area perovskite solar cells is difficult to form a high-quality interface with the velvet, which will also lead to poor quality of the finished product of the overall processed perovskite tandem solar cell.

[0004] Therefore, a new preparation process for preparing perovskite solar cells is urgently needed to at least solve the problem of poor quality of finished products of perovskite solar cells. Summary of the invention

[0005] The main purpose of the present invention is to provide a method for preparing a functional layer in a perovskite solar cell, a method for preparing a perovskite solar cell, and a perovskite solar cell, so as to solve the problem of poor quality of finished products of perovskite solar cells in the prior art.

[0006] To achieve the above-mentioned purpose, according to one aspect of the present invention, there is provided a method for preparing a functional layer in a perovskite solar cell, comprising: placing a precursor solution of the functional layer in a groove of a conveying device, the groove having a first side wall and a second side wall opposite to each other, a conveying shaft being arranged between the first side wall and the second side wall, the conveying device having a substrate and a conveying shaft, and one side surface of the substrate having a groove; placing a semiconductor substrate on the conveying shaft and contacting it with the precursor solution, wherein, when the conveying shaft is in motion, the semiconductor substrate moves from a first position of the precursor solution in the groove to a second position to form a precursor film on one side of the semiconductor substrate; and heat-treating the precursor film to form the functional layer.

[0007] Optionally, the functional layer includes any one of an electron transport layer, a hole transport layer and a perovskite absorption layer.

[0008] Optionally, the groove includes a first groove and a second groove. When the functional layer is a perovskite absorption layer, the step of forming a precursor film includes: placing a semiconductor substrate on a conveying axis of the first groove and contacting it with a first precursor solution containing a metal halide in the first groove, wherein, when the conveying axis is in motion, the semiconductor substrate moves from a first position of the first precursor solution in the first groove to a second position to form a metal halide film on one side of the semiconductor substrate; placing the semiconductor substrate having the metal halide film on the conveying axis of the second groove and contacting it with a second precursor solution containing an organic amine salt in the second groove, wherein, when the conveying axis is in motion, the semiconductor substrate having the metal halide film moves from a first position of the second precursor solution in the second groove to a second position to form a precursor film.

[0009] Optionally, in the case where the functional layer is a perovskite absorption layer, the step of forming a precursor film includes: placing a semiconductor substrate on a conveying axis of the groove and contacting it with a first precursor solution containing a metal halide in the groove, wherein, when the conveying axis is in motion, the semiconductor substrate moves from a first position of the first precursor solution in the groove to a second position to form a metal halide film on one side of the semiconductor substrate; preparing a second precursor solution containing an organic amine salt; and coating the second precursor solution on a side of the metal halide film away from the semiconductor substrate to form a precursor film.

[0010] Optionally, in the case where the functional layer is a perovskite absorption layer, the step of forming a precursor film includes: preparing a first precursor solution containing a metal halide; coating the first precursor solution on a semiconductor substrate to form a metal halide film; placing the semiconductor substrate with the metal halide film on a conveying axis of the groove and contacting it with a second precursor solution containing an organic amine salt in the groove, wherein, when the conveying axis is in motion, the semiconductor substrate with the metal halide film moves from a first position of the second precursor solution in the groove to a second position to form the precursor film.

[0011] Optionally, in the case where there are multiple grooves, the transmission axis includes multiple grooves corresponding to the multiple grooves one by one, or the transmission axis is located between the first side wall and the second side wall of any one of the grooves.

[0012] According to another aspect of the present invention, a method for preparing a perovskite solar cell is provided, comprising: providing a semiconductor substrate, the semiconductor substrate comprising at least a first transparent conductive layer; forming a first transmission layer, a perovskite absorption layer and a second transmission layer stacked in sequence on the first transparent conductive layer, wherein any one of the first transmission layer, the perovskite absorption layer and the second transmission layer is prepared by the method for preparing a functional layer in a perovskite solar cell according to any one of claims 1 to 6; and forming a conductive electrode layer on a side of the second transmission layer away from the perovskite absorption layer.

[0013] According to another aspect of the present invention, a perovskite solar cell is provided, which is prepared by the above-mentioned method for preparing a perovskite solar cell.

[0014] Optionally, the above-mentioned perovskite solar cell further includes: a crystalline silicon cell, which is located on a side of the first transparent conductive layer of the perovskite solar cell away from the first transmission layer of the perovskite solar cell.

[0015] Optionally, the conductive electrode layer of the perovskite solar cell includes a second transparent conductive layer, an anti-reflection layer and a metal electrode layer which are sequentially stacked, and the second transparent conductive layer is located between the second transmission layer and the anti-reflection layer of the perovskite solar cell.

[0016] By applying the technical solution of the present invention, a method for preparing a functional layer in a perovskite solar cell is provided. In the preparation method, the precursor solution of the functional layer can be first placed in a groove of a conveying device, wherein the conveying device also has a substrate and a conveying shaft. It can be understood that the groove can be located on one side surface of the substrate, and the groove has a first side wall and a second side wall relative to each other, and the conveying shaft can be arranged between the first side wall and the second side wall. Then, the semiconductor substrate can be placed on the conveying shaft, and at this time, the semiconductor substrate placed on the conveying shaft can contact the precursor solution in the groove. Afterwards, when the conveying shaft is in motion, the semiconductor substrate can move from the first position of the precursor solution in the groove to the second position, thereby forming a precursor film on one side of the semiconductor substrate. Finally, by heat treating the precursor film, the above-mentioned functional layer can be formed. It should be noted that since the entire surface of one side of the semiconductor substrate can be in contact with the precursor solution in the groove under the support of the conveying shaft, on this basis, by moving the conveying shaft, the entire surface of one side of the semiconductor substrate in contact with the precursor solution can be made to move in the precursor solution, and even if the area of ​​the entire surface of one side of the semiconductor substrate is large, a functional layer with high thickness uniformity and completely covering the entire surface area of ​​one side of the semiconductor substrate can still be formed by the preparation method of the present application, thereby improving the problem in the prior art that the precursor solution coated on the substrate is uneven or cannot completely cover the entire surface of one side of the semiconductor substrate, and can improve the quality of the finished product of the overall processed perovskite solar cell, thereby solving the problem of poor quality of the finished product of the perovskite solar cell in the prior art. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The accompanying drawings constituting a part of the present invention are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the accompanying drawings:

[0018] Figure 1 A partial schematic diagram of a conveying device in a method for preparing a functional layer in a perovskite solar cell according to an embodiment of the present invention is shown;

[0019] Figure 2 Another partial schematic diagram of a conveying device in a method for preparing a functional layer in a perovskite solar cell according to an embodiment of the present invention is shown;

[0020] Figure 3 A schematic diagram of a perovskite solar cell including a functional layer prepared by a method for preparing a functional layer in a perovskite solar cell according to an embodiment of the present invention is shown.

[0021] The above drawings include the following reference numerals:

[0022] 101. substrate; 10. groove; 20. precursor solution; 30. transmission axis; 40. semiconductor base; 50. first transparent conductive layer; 60. first transmission layer; 70. perovskite absorption layer; 80. second transmission layer; 90. second transparent conductive layer; 100. anti-reflection layer; 110. metal electrode layer. DETAILED DESCRIPTION

[0023] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0024] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0025] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so as to describe the embodiments of the present invention described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0026] As described in the background technology, the main methods for preparing large-area perovskite tandem cells at present include scraping and slit coating, etc., but due to the large area of ​​perovskite solar cells in industrial applications, the precursor solution coated on the substrate is uneven or cannot completely cover the entire substrate, which will lead to the poor quality of the finished product of the overall processed perovskite solar cell. In addition, in the perovskite tandem solar cell, since the bottom cell of the tandem perovskite solar cell with good performance mostly adopts a velvet structure, the existing above-mentioned method of preparing large-area perovskite solar cells is difficult to form a high-quality interface with the velvet, so it will also lead to the poor quality of the finished product of the overall processed perovskite tandem solar cell. In order to solve the problem of poor quality of the finished product of perovskite solar cells or perovskite tandem solar cells, the present application provides a method for preparing a functional layer in a perovskite solar cell, a method for preparing a perovskite solar cell, and a perovskite solar cell.

[0027] In some optional embodiments, a method for preparing a functional layer in a perovskite solar cell is provided, comprising: Figure 1 As shown, a precursor solution 20 of a functional layer is placed in a groove 10 of a conveying device, the groove 10 has a first side wall and a second side wall opposite to each other, a conveying shaft 30 is arranged between the first side wall and the second side wall, the conveying device has a substrate 101 and a conveying shaft 30, and one side surface of the substrate 101 has a groove 10, as shown in FIG. Figure 2 As shown; a semiconductor substrate 40 is placed on a conveying shaft 30 and in contact with a precursor solution 20, wherein, when the conveying shaft 30 is in motion, the semiconductor substrate 40 moves from a first position of the precursor solution 20 in the groove 10 to a second position to form a precursor film on one side of the semiconductor substrate 40; the precursor film is heat-treated to form a functional layer.

[0028] Specifically, Figure 2 As shown, the precursor solution 20 required for forming the functional layer can be prepared first. In the case where the above-mentioned conveying device includes a substrate 101 and a conveying shaft 30, and the conveying shaft 30 is located between the first side wall and the second side wall opposite to the groove 10 on the surface of one side of the substrate 101, the precursor solution 20 can be placed in the above-mentioned groove 10 for standby. Then, the semiconductor substrate 40 can be placed on the above-mentioned conveying shaft 30, and the semiconductor substrate 40 can be placed in contact with the precursor solution 20 in the groove 10. Afterwards, when the conveying shaft 30 is in a moving state, the semiconductor substrate 40 can be moved from the first position of the precursor solution 20 in the groove 10 to the second position, so as to form a precursor film on the side of the semiconductor substrate 40 facing the groove 10. It should be noted that the above-mentioned first position is different from the second position. Finally, since the formed precursor film is a wet film, in order to solidify the precursor film, the precursor film can be heat-treated to evaporate the solvent in the precursor film and solidify to obtain the desired functional layer.

[0029] In the above embodiment, the concentration of the precursor solution 20 in the groove 10, the conveying rate of the conveying axis 30, and the depth of one side of the semiconductor substrate 40 in the precursor solution 20 can all be reasonably selected according to the actual needs of technicians in this field, and this application does not make specific limitations.

[0030] Optionally, the functional layer of the perovskite solar cell may include at least one of an electron transport layer, a hole transport layer and a perovskite absorption layer.

[0031] In some optional embodiments, the functional layer may be an electron transport layer. At this time, the method for preparing the functional layer in the above-mentioned perovskite solar cell may include: when the precursor solution of the electron transport layer is placed in the groove of the conveying device, the semiconductor substrate may be first placed on the conveying shaft of the groove and contacted with the precursor solution in the groove, and then when the conveying shaft is in motion, the conveying shaft may move the semiconductor substrate from the first position of the precursor solution in the groove to the second position, thereby forming a precursor film of the electron transport layer on one side of the semiconductor substrate. The solvent in the precursor film may then be removed by heat treatment to solidify the precursor film to form an electron transport layer.

[0032] The precursor solution of the electron transport layer may include but is not limited to a SnO2 precursor solution, a ZnO precursor solution, a TiO2 precursor solution or a precursor solution containing PCBM and C. 60 A precursor solution of at least one of the above.

[0033] Exemplarily, the process for preparing the SnO2 precursor solution may be: firstly, SnCl2·2H2O and CH4N2S are dissolved in deionized water in a certain mass ratio, and magnetically stirred evenly at room temperature to form a milky white suspension, and then the suspension is directly exposed to air and stirred to obtain a yellow transparent SnO2 solution.

[0034] In some optional embodiments, the functional layer may be a hole transport layer. In this case, the method for preparing the functional layer in the perovskite solar cell may include: when the precursor solution of the hole transport layer is placed in a groove of a conveying device, the semiconductor substrate may be first placed on the conveying shaft of the groove and contacted with the precursor solution in the groove, and then when the conveying shaft is in motion, the conveying shaft may move the semiconductor substrate from the first position of the precursor solution in the groove to the second position, thereby forming a precursor film of the hole transport layer on one side of the semiconductor substrate. The solvent in the precursor film may then be removed by heat treatment to solidify the precursor film to form a hole transport layer.

[0035] Specifically, the semiconductor substrate for forming the hole transport layer may be different from the semiconductor substrate for forming the electron transport layer. Exemplarily, the semiconductor substrate for forming the electron transport layer may be a transparent conductive layer, and the semiconductor substrate for forming the hole transport layer may include a transparent conductive layer, an electron transport layer, and a perovskite absorption layer arranged in a stacked manner, and the hole transport layer is located on the side of the perovskite absorption layer away from the electron transport layer; or the semiconductor substrate for forming the hole transport layer may be a transparent conductive layer, and the semiconductor substrate for forming the electron transport layer may include a transparent conductive layer, a hole transport layer, and a perovskite absorption layer arranged in a stacked manner, and the electron transport layer is located on the side of the perovskite absorption layer away from the hole transport layer.

[0036] The precursor solution of the hole transport layer may include but is not limited to a Spiro-OMeTAD precursor solution, a PTAA precursor solution, a PEDOT:PSS precursor solution or a NiO precursor solution.

[0037] Exemplarily, the process for preparing the spiro-OMeTAD precursor solution can be: dissolving a certain mass of spiro-OMeTAD in chlorobenzene, adding a certain amount of Li-TFSI (acetonitrile solution), a certain amount of Co-TFSI (acetonitrile solution), and a certain amount of t-BP to obtain the above-mentioned spiro-OMeTAD precursor solution.

[0038] In some optional embodiments, the functional layer may be a perovskite absorption layer. In this case, the method for preparing the functional layer in the perovskite solar cell may include: when the precursor solution of the perovskite absorption layer is placed in a groove of a conveying device, the semiconductor substrate may be first placed on the conveying shaft of the groove and contacted with the precursor solution in the groove, and then when the conveying shaft is in motion, the conveying shaft may move the semiconductor substrate from the first position of the precursor solution in the groove to the second position, thereby forming a precursor film of the perovskite absorption layer on one side of the semiconductor substrate. The solvent in the precursor film may then be removed by heat treatment to solidify the precursor film to form a perovskite absorption layer.

[0039] Optionally, when the perovskite absorption layer is prepared by a one-step method, the perovskite precursor solution may be an ABX3 precursor solution, wherein A may include but is not limited to Cs + , Rb + 、Organic formamidinium ion (NH2CH=NH2 + , referred to as FA + ), organic methylamine ion (CH3NH2 + , referred to as MA + ) and guanidinium ion (C(NH2)3 + ) in one or more; the above B may include but is not limited to lead ions (Pb 2+ ), tin ions (Sn 2+ ), germanium (Ge 2+ ) and titanium (Ti 2+ ) in one or more; the above X may include but is not limited to bromide ion (Br - ), iodide ion (I - ) and chloride ions (Cl - ), and those skilled in the art can reasonably select one or more of them according to actual needs, and this application does not make specific limitations. Accordingly, the precursor solution of the perovskite absorption layer in the groove is the above-mentioned ABX3 precursor solution.

[0040] Optionally, in the case where the perovskite absorption layer is prepared by a two-step method, the perovskite precursor solution may include a first precursor solution containing a metal halide and a second precursor solution containing an organic amine salt. At this time, the method for preparing a perovskite absorption layer using the method for preparing a functional layer of the present application includes: the groove includes a first groove and a second groove, the semiconductor substrate is placed on the conveying axis of the first groove and is in contact with the first precursor solution containing a metal halide in the first groove, wherein, when the conveying axis is in a moving state, the semiconductor substrate moves from the first position of the first precursor solution in the first groove to the second position to form a metal halide film on one side of the semiconductor substrate; the semiconductor substrate having the metal halide film is placed on the conveying axis of the second groove and is in contact with the second precursor solution containing an organic amine salt in the second groove, wherein, when the conveying axis is in a moving state, the semiconductor substrate having the metal halide film moves from the first position of the second precursor solution in the second groove to the second position to form a precursor film.

[0041] On the basis that the functional layer of the perovskite solar cell can be prepared by conventional spin coating, evaporation, slit coating or blade coating, if the perovskite absorption layer of the perovskite solar cell is prepared by a two-step method, the steps of forming the perovskite absorption layer can be: first, a first precursor solution containing a metal halide is coated on a semiconductor substrate by conventional spin coating, evaporation, immersion, slit coating or blade coating to form a metal halide film, and then the above-mentioned preparation method for preparing the functional layer of the present application can be used to prepare a precursor film for forming the perovskite absorption layer; or first, a metal halide film is prepared by the above-mentioned preparation method for preparing the functional layer of the present application, and then a second precursor solution containing an organic amine salt can be coated on the metal halide film by conventional spin coating, immersion, evaporation, slit coating or blade coating to form a precursor film of the perovskite absorption layer.

[0042] Optionally, the evaporation may be any one of single-source evaporation, dual-source co-evaporation or dual-source sequential evaporation.

[0043] Illustratively, in the case where the functional layer is a perovskite absorption layer, the step of forming a precursor film includes: placing a semiconductor substrate on a conveying axis of a groove and contacting it with a first precursor solution containing a metal halide in the groove, wherein, when the conveying axis is in motion, the semiconductor substrate moves from a first position of the first precursor solution in the groove to a second position to form a metal halide film on one side of the semiconductor substrate; preparing a second precursor solution containing an organic amine salt; and coating the second precursor solution on a side of the metal halide film away from the semiconductor substrate to form a precursor film.

[0044] Illustratively, in the case where the functional layer is a perovskite absorption layer, the steps of forming a precursor film include: preparing a first precursor solution containing a metal halide; coating the first precursor solution on a semiconductor substrate to form a metal halide film; placing the semiconductor substrate with the metal halide film on a conveying axis of a groove and contacting it with a second precursor solution containing an organic amine salt in the groove, wherein, when the conveying axis is in motion, the semiconductor substrate with the metal halide film moves from a first position of the second precursor solution in the groove to a second position to form a precursor film.

[0045] In some optional embodiments, when there are multiple grooves, the transmission axis includes multiple grooves corresponding to the multiple grooves one by one, or the transmission axis is located between the first side wall and the second side wall of any one of the grooves.

[0046] Specifically, one side surface of the substrate of the conveying device required for preparing the functional layer in the perovskite absorption layer of the present application may have one groove or a plurality of grooves arranged at intervals.

[0047] In the above embodiment, when there are multiple grooves, the multiple grooves respectively have opposite first side walls and second side walls, and a transmission axis can be arranged between each opposite first side wall and second side wall, that is, the two transmission axes corresponding to any two grooves are independent of each other.

[0048] Or when the groove includes multiple grooves, the multiple grooves can share a transmission axis, that is, the transmission axis is located between the opposite first side wall and the second side wall of any groove.

[0049] According to another aspect of the present application, a method for preparing a perovskite solar cell is provided, comprising: providing a semiconductor substrate, the semiconductor substrate comprising at least a first transparent conductive layer; forming a first transmission layer, a perovskite absorption layer, and a second transmission layer stacked in sequence on the first transparent conductive layer, wherein any one of the first transmission layer, the perovskite absorption layer, and the second transmission layer is prepared by the method for preparing a functional layer in a perovskite solar cell according to any one of claims 1 to 6; and forming a conductive electrode layer on a side of the second transmission layer away from the perovskite absorption layer.

[0050] In the above implementation mode, if Figure 3As shown, the perovskite solar cell includes a first transparent conductive layer 50, an electron transport layer, a perovskite absorption layer 70, a hole transport layer and a conductive electrode layer. Therefore, in order to form a perovskite solar cell, a semiconductor substrate 40 including a first transparent conductive layer 50 may be provided first, and then a first transport layer 60 may be formed on the surface of the first transparent conductive layer 50, and then a perovskite absorption layer 70 may be formed on the side of the first transport layer 60 away from the first transparent conductive layer 50, a second transport layer 80 may be formed on the side of the perovskite absorption layer 70 away from the first transport layer 60, and a conductive electrode layer may be formed on one side of the second transport layer 80. Wherein, in the case where the first transport layer 60 is an electron transport layer, the second transport layer 80 may be a hole transport layer; in the case where the first transport layer 60 is a hole transport layer, the second transport layer 80 may be an electron transport layer.

[0051] Specifically, the material of the first transparent conductive layer 50 may include but is not limited to indium tin oxide (ITO), indium zinc oxide (IZO) or aluminum-doped zinc oxide (AZO), etc. The first transparent conductive layer 50 may be formed on a semiconductor substrate by PVD magnetron sputtering.

[0052] Specifically, the material of the electron transport layer may include but is not limited to SnO2, ZnO, TiO2, PCBM and C 60 The materials of the hole transport layer may include but are not limited to Spiro-OMeTAD, PTAA, PEDOT:PSS and NiO, etc. The above electron transport layer or hole transport layer may be prepared by spin coating, evaporation, atomic layer deposition or the preparation method of the functional layer in the perovskite solar cell provided in the present application.

[0053] The conductive electrode layer may include but is not limited to indium tin oxide (ITO), indium zinc oxide (IZO), aluminum-doped zinc oxide (AZO), gold (Au), silver (Ag), aluminum (Al) or copper (Cu).

[0054] Based on the fact that the present application provides a method for preparing a perovskite solar cell, in some optional embodiments, the present application may also provide a perovskite solar cell. It is easy to understand that the perovskite solar cell can be prepared by the above-mentioned method for preparing a perovskite solar cell.

[0055] In some optional embodiments, the above-mentioned perovskite solar cell may also be a crystalline silicon / perovskite tandem solar cell. That is, based on the above-mentioned perovskite solar cell, the perovskite solar cell may also include a crystalline silicon cell, and the crystalline silicon cell may be located on the side of the first transparent conductive layer 50 of the perovskite solar cell away from the first transmission layer 60 of the perovskite solar cell. Alternatively, it can be understood that the semiconductor substrate 40 of the above-mentioned perovskite solar cell is a crystalline silicon cell, such as Figure 2 shown.

[0056] In addition, if Figure 2 As shown, in order to increase the photoelectric conversion efficiency of the above-mentioned perovskite solar cell or the above-mentioned crystalline silicon / perovskite stacked solar cell, the above-mentioned conductive electrode layer may include a second transparent conductive layer 90, an anti-reflection layer 100 and a metal electrode layer 110 stacked in sequence, and the second transparent conductive layer is located between the second transmission layer and the anti-reflection layer of the perovskite solar cell.

[0057] Specifically, the material of the second transparent conductive layer may include, but is not limited to, indium tin oxide (ITO), indium zinc oxide (IZO) or aluminum-doped zinc oxide (AZO).

[0058] Specifically, the material of the anti-reflection layer may include but is not limited to lithium fluoride (LiF x ) or magnesium fluoride (MgF2), etc.

[0059] Specifically, the material of the metal electrode layer may include but is not limited to gold (Au), silver (Ag), aluminum (Al) or copper (Cu).

[0060] From the above description, it can be seen that the above embodiments of the present invention achieve the following technical effects:

[0061] By applying the technical solution of the present invention, a method for preparing a functional layer in a perovskite solar cell is provided. In the preparation method, the precursor solution of the functional layer can be first placed in a groove of a conveying device, wherein the conveying device also has a substrate and a conveying shaft. It can be understood that the groove can be located on one side surface of the substrate, and the groove has a first side wall and a second side wall relative to each other, and the conveying shaft can be arranged between the first side wall and the second side wall. Then, the semiconductor substrate can be placed on the conveying shaft, and at this time, the semiconductor substrate placed on the conveying shaft can contact the precursor solution in the groove. Afterwards, when the conveying shaft is in motion, the semiconductor substrate can move from the first position of the precursor solution in the groove to the second position, thereby forming a precursor film on one side of the semiconductor substrate. Finally, by heat treating the precursor film, the above-mentioned functional layer can be formed. It should be noted that since the entire surface of one side of the semiconductor substrate can be in contact with the precursor solution in the groove under the support of the conveying shaft, on this basis, by moving the conveying shaft, the entire surface of one side of the semiconductor substrate in contact with the precursor solution can be made to move in the precursor solution, and even if the area of ​​the entire surface of one side of the semiconductor substrate is large, a functional layer with high thickness uniformity and completely covering the entire surface area of ​​one side of the semiconductor substrate can still be formed by the preparation method of the present application, thereby improving the problem in the prior art that the precursor solution coated on the substrate is uneven or cannot completely cover the entire surface of one side of the semiconductor substrate, and can improve the quality of the finished product of the overall processed perovskite solar cell, thereby solving the problem of poor quality of the finished product of the perovskite solar cell in the prior art.

[0062] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A method for preparing a functional layer in a perovskite solar cell, characterized in that: include: Placing a precursor solution of the functional layer in a groove of a conveying device, wherein the groove has a first side wall and a second side wall opposite to each other, a conveying shaft is disposed between the first side wall and the second side wall, the conveying device has a substrate and the conveying shaft, and one side surface of the substrate has the groove; Placing a semiconductor substrate on the conveying shaft and contacting the precursor solution, wherein when the conveying shaft is in motion, the semiconductor substrate moves from a first position of the precursor solution in the groove to a second position to form a precursor film on one side of the semiconductor substrate; The precursor film is heat-treated to form the functional layer.

2. The preparation method according to claim 1, characterized in that: The functional layer includes any one of an electron transport layer, a hole transport layer and a perovskite absorption layer.

3. The preparation method according to claim 2, characterized in that: The groove includes a first groove and a second groove. When the functional layer is the perovskite absorption layer, the step of forming the precursor film includes: Placing the semiconductor substrate on the conveying shaft of the first groove and contacting the semiconductor substrate with the first precursor solution containing metal halide in the first groove, wherein when the conveying shaft is in motion, the semiconductor substrate moves from a first position of the first precursor solution in the first groove to a second position to form a metal halide film on one side of the semiconductor substrate; The semiconductor substrate with the metal halide film is placed on the conveying axis of the second groove and contacts with the second precursor solution containing an organic amine salt in the second groove, wherein, when the conveying axis is in motion, the semiconductor substrate with the metal halide film moves from a first position of the second precursor solution in the second groove to a second position to form the precursor film.

4. The preparation method according to claim 2, characterized in that: In the case where the functional layer is the perovskite absorption layer, the step of forming the precursor film includes: Placing the semiconductor substrate on the conveying shaft of the groove and contacting the semiconductor substrate with the first precursor solution containing metal halide in the groove, wherein when the conveying shaft is in motion, the semiconductor substrate moves from a first position of the first precursor solution in the groove to a second position to form a metal halide film on one side of the semiconductor substrate; preparing a second precursor solution containing an organic amine salt; The second precursor solution is coated on a side of the metal halide film away from the semiconductor substrate to form the precursor film.

5. The preparation method according to claim 4, characterized in that: In the case where the functional layer is the perovskite absorption layer, the step of forming the precursor film includes: preparing a first precursor solution containing a metal halide; coating the first precursor solution on the semiconductor substrate to form a metal halide thin film; The semiconductor substrate with the metal halide film is placed on the conveying axis of the groove and contacted with the second precursor solution containing organic amine salt in the groove, wherein, when the conveying axis is in motion, the semiconductor substrate with the metal halide film moves from a first position of the second precursor solution in the groove to a second position to form the precursor film.

6. The preparation method according to any one of claims 1 to 5, characterized in that In the case where the grooves include a plurality of grooves, the conveying shaft includes a plurality of grooves corresponding one to one with the plurality of grooves, or the conveying shaft is located between the first side wall and the second side wall of any one of the grooves.

7. A method for preparing a perovskite solar cell, characterized in that: include: Providing a semiconductor substrate, wherein the semiconductor substrate comprises at least a first transparent conductive layer; A first transmission layer, a perovskite absorption layer, and a second transmission layer are sequentially stacked on the first transparent conductive layer, wherein any one of the first transmission layer, the perovskite absorption layer, and the second transmission layer is prepared by the method for preparing a functional layer in a perovskite solar cell according to any one of claims 1 to 6; A conductive electrode layer is formed on a side of the second transmission layer away from the perovskite absorption layer.

8. A perovskite solar cell, characterized in that: The perovskite solar cell is prepared by the method for preparing the perovskite solar cell as claimed in claim 7.

9. The perovskite solar cell according to claim 8, characterized in that: Also includes: The crystalline silicon cell is located on a side of the first transparent conductive layer of the perovskite solar cell away from the first transmission layer of the perovskite solar cell.

10. The perovskite solar cell according to claim 8 or 9, characterized in that: The conductive electrode layer of the perovskite solar cell comprises a second transparent conductive layer, an anti-reflection layer and a metal electrode layer which are sequentially stacked, and the second transparent conductive layer is located between the second transmission layer and the anti-reflection layer of the perovskite solar cell.

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