Substrate processing apparatus, exhaust system, and method for manufacturing semiconductor device

Abstract

The invention provides a technology capable of prolonging the maintenance period of a component arranged in an exhaust system. The substrate processing apparatus includes a processing chamber for processing a substrate; an exhaust pipe for discharging ambient gas in the processing chamber; a first valve part which is provided in the exhaust pipe and closes a flow path in the exhaust pipe; a second valve section that is provided closer to the first valve section on the exhaust pipe, is provided downstream of the first valve section, and adjusts the flow rate of gas flowing through a flow path in the exhaust pipe; and a gas supply unit configured so as to be able to supply a predetermined gas to a flow path space in the exhaust pipe formed between the first valve unit and the second valve unit.

Description

Technical Field

[0001] The present invention relates to a substrate processing device, an exhaust system and a method for manufacturing a semiconductor device. Background Art

[0002] As one of the steps in the manufacturing process of a semiconductor device, a process is performed in which a process gas is supplied to a substrate in a process container and an exhaust system including an exhaust unit is exhausted to process the substrate. Due to this process, a predetermined amount of by-products may be attached to the process container. For example, as disclosed in Patent Documents 1 and 2, since a predetermined amount of by-products is attached to the exhaust unit, maintenance of the exhaust unit is performed at a predetermined timing.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2019-050246

[0006] Patent Document 2: Japanese Patent Application Publication No. 2021-100047 Summary of the invention

[0007] Problems to be solved by the invention

[0008] The present invention provides a technology capable of extending the maintenance cycle of components provided in an exhaust system.

[0009] Solutions to Solve Problems

[0010] According to one embodiment of the present invention, a technology is provided, which comprises:

[0011] a processing chamber for processing substrates;

[0012] An exhaust pipe for discharging the ambient gas from the processing chamber;

[0013] a first valve portion provided in the exhaust pipe and closing a flow path in the exhaust pipe;

[0014] a second valve portion which is adjacent to the first valve portion on the exhaust pipe and is provided on the downstream side of the first valve portion and adjusts the flow rate of the gas flowing in the flow path in the exhaust pipe; and

[0015] A gas supply portion is configured to be able to supply a predetermined gas to a flow path space formed in the exhaust pipe between the first valve portion and the second valve portion.

[0016] Effects of the Invention

[0017] According to the present invention, the maintenance cycle of components provided in the exhaust system can be extended. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a schematic structural diagram of a vertical processing furnace of a substrate processing apparatus applicable to one embodiment of the present invention, and is a diagram showing a processing furnace portion in a longitudinal cross-sectional view.

[0019] Figure 2 1 is a schematic structural diagram of a vertical processing furnace of a substrate processing device applicable to one embodiment of the present invention, and the processing furnace portion is shown as Figure 1 The AA line cross-sectional view is shown in FIG.

[0020] Figure 3 This is a schematic configuration diagram of a controller for a substrate processing apparatus according to an embodiment of the present invention, and is a diagram showing a control system of the controller in the form of a block diagram.

[0021] Figure 4 It is a diagram showing a substrate processing procedure according to one embodiment of the present invention.

[0022] Figure 5 FIG. 1 is a schematic structural diagram showing an exhaust system of a substrate processing apparatus according to an embodiment of the present invention.

[0023] Figure 6 This is a schematic structural diagram of an exhaust system of a substrate processing apparatus applicable to one embodiment of the present invention. DETAILED DESCRIPTION

[0024] The following mainly refers to Figures 1 to 5 , describing one embodiment of the present invention. In addition, the figures used in the following description are only schematic figures, and the relationship between the dimensions of the elements shown in the figures, the proportions of the elements, etc. may not be consistent with reality. In addition, the relationship between the dimensions of the elements, the proportions of the elements, etc. between multiple figures may not be consistent.

[0025] (1) Structure of substrate processing apparatus

[0026] like Figure 1 As shown, the processing furnace 202 has a heater 207 as a heating mechanism (temperature adjustment unit). The heater 207 is cylindrical and is vertically mounted by being supported by a holding plate. The heater 207 also functions as an activation mechanism (excitation unit) that activates (excites) the gas using heat.

[0027] On the inner side of the heater 207, a reaction tube 203 is arranged concentrically with the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC), and is formed into a cylindrical shape with a closed upper end and an open lower end. Below the reaction tube 203, a manifold 209 is arranged concentrically with the reaction tube 203. The manifold 209 is made of a metal material such as stainless steel (SUS), and is formed into a cylindrical shape with an upper end and a lower end open. The upper end of the manifold 209 is engaged with the lower end of the reaction tube 203, and is configured to support the reaction tube 203. An O-ring 220a as a sealing member is provided between the manifold 209 and the reaction tube 203. The reaction tube 203 is installed vertically in the same manner as the heater 207. The processing container (reaction container) is mainly composed of the reaction tube 203 and the manifold 209. A processing chamber 201 is formed in the hollow portion of the cylinder of the processing container. The processing chamber 201 is configured to accommodate a wafer 200 as a substrate.

[0028] In the processing chamber 201, nozzles 249a and 249b are provided so as to penetrate the side wall of the manifold 209. Gas supply pipes 232a and 232b are connected to the nozzles 249a and 249b, respectively.

[0029] The gas supply pipes 232a and 232c are provided with mass flow controllers (MFC) 241a and 241b as flow controllers (flow control units) and valves 243a and 243b as on-off valves, respectively, in order from the upstream side. Gas supply pipes 232c and 232d are connected to the gas supply pipes 232a and 232b on the downstream side of the valves 243a and 243b, respectively. MFCs 241c and 241d and valves 243c and 243d are provided in order from the upstream side, respectively, to the gas supply pipes 232c and 232d.

[0030] like Figure 2 As shown, the nozzles 249a and 249b are respectively arranged in a circular ring-shaped space between the inner wall of the reaction tube 203 and the wafer 200 in a plane view, from the lower part to the upper part of the inner wall of the reaction tube 203, so as to stand upward in the loading direction of the wafer 200. That is, the nozzles 249a and 249b are respectively arranged in the area horizontally surrounding the wafer arrangement area on the side of the wafer arrangement area where the wafers 200 are arranged, so as to be arranged along the wafer arrangement area. Gas supply holes 250a and 250b for supplying gas are respectively provided on the side of the nozzles 249a and 249b. The gas supply holes 250a and 250b are respectively opened in a manner toward the center of the reaction tube 203, and can supply gas toward the wafer 200. A plurality of gas supply holes 250a and 250b are provided from the lower part to the upper part of the reaction tube 203.

[0031] A gas containing a predetermined element (main element) is supplied as a processing gas (raw material gas) from the gas supply pipe 232 a via the MFC 241 a , the valve 243 a , and the nozzle 249 a to the processing chamber 201 .

[0032] The second cleaning gas is supplied from the gas supply pipe 232 a to the processing chamber 201 via the MFC 241 a , the valve 243 a , and the nozzle 249 a .

[0033] A nitriding agent is supplied as a processing gas (reaction gas) to the processing chamber 201 from the gas supply pipe 232b via the MFC 241b, the valve 243b, and the nozzle 249b. The term "agent" used in this specification includes at least one of a gaseous substance and a liquid substance. A liquid substance includes a mist substance. That is, the nitriding agent may include a gaseous substance, a liquid substance such as a mist substance, or both. This is also the case in the following description.

[0034] An oxidant as a processing gas (reaction gas) is supplied to the processing chamber 201 from the gas supply pipe 232 b via the MFC 241 b , the valve 243 b , and the nozzle 249 b .

[0035] Inert gas is supplied from gas supply pipes 232c and 232d to the processing chamber 201 via MFCs 241c and 241d, valves 243c and 243d, gas supply pipes 232a and 232b, and nozzles 249a and 249b, respectively. As the inert gas, nitrogen (N2) gas can be used, for example. The inert gas functions as a purge gas or a carrier gas.

[0036] The gas supply pipe 232a, MFC241a, and valve 243a respectively constitute the processing gas (raw gas) supply system and the second cleaning gas supply system. The gas supply pipe 232b, MFC241b, and valve 243b constitute the processing gas (reaction gas) supply system. The gas supply pipes 232c, 232d, MFC241c, 241d, valves 243c, 243d constitute the inactive gas supply system. In addition, the gas supply pipe 232e, MFC241e, and valve 243e described later constitute the first cleaning gas supply system.

[0037] Any one or all of the various supply systems described above may also be configured as an integrated supply system 248 that integrates valves 243a to 243e and MFCs 241a to 241e, etc. The integrated supply system 248 is configured to be connected to the gas supply pipes 232a to 232e, respectively, and the supply operation of various gases in the gas supply pipes 232a to 232e, that is, the opening and closing operation of the valves 243a to 243e, the flow rate adjustment operation of the MFCs 241a to 241e, etc., is controlled by the controller 121 described later.

[0038] An exhaust pipe 231 for exhausting the atmosphere of the processing chamber 201 is connected to the lower side wall of the reaction tube 203. A vacuum pump 246 as a vacuum exhaust device is connected to the exhaust pipe 231 via a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure of the processing chamber 201, a gate valve 244a as a cut-off mechanism (hereinafter referred to as the first valve unit (opening and closing valve)) for closing and cutting off the flow path in the exhaust pipe 231, and an APC (Auto Pressure Controller) valve 244b as a pressure regulator (hereinafter referred to as the second valve unit (adjustment valve)). The gate valve 244a and the APC valve 244b are separated by the length of the piping (the length of the piping in the flow direction). At this time, the structure is such that when the gate valve 244a and the APC valve 244b are set to be fully closed, the space formed in the exhaust pipe 231 is filled with a predetermined gas. The space in the exhaust pipe formed between the gate valve 244a and the APC valve 244b only needs to be filled with the predetermined gas, so, for example, the gate valve 244a and the APC valve 244b may be separated by more than 1m. In this specification, the actual exhaust pipe 231 is sometimes more than tens of meters and is very long, so sometimes less than 4m (4000mm) is expressed as "close" (or "short"), and less than 1m is expressed as "close", "nearest", "close" and other extremely "close" (or "short"). In addition, the pipe length L will be described later. The gate valve 244a can perform vacuum exhaust and stop vacuum exhaust in the processing chamber 201 by opening and closing the valve when the valve of the APC valve 244b is in an open state and the vacuum pump 246 is in operation. In addition, the APC valve 244b can perform vacuum exhaust and stop vacuum exhaust in the processing chamber 201 by opening and closing the valve when the gate valve 244a is in an open state and the vacuum pump 246 is in operation. Furthermore, the pressure in the processing chamber 201 can be adjusted by adjusting the valve opening based on the pressure information detected by the pressure sensor 245 when the gate valve 244a is in an open state and the vacuum pump 246 is in operation.

[0039] The exhaust pipe 231e at least at the downstream side of the gate valve 244a and the upstream side of the APC valve 244b in the exhaust pipe 231 is provided with a supply port 231p as an inlet, and the supply port 231p can supply a predetermined gas. The gas supply pipe 232e as a gas supply unit is provided with an MFC 241e and a valve 243e from the upstream side. In the present embodiment, the first cleaning gas in the predetermined gas is supplied from the gas supply pipe 232e via the MFC 241e, the valve 243e, and the supply port 231p to the exhaust pipe 231e and the vacuum pump 246. In addition, although not shown in the figure, an inactive gas such as N2 gas can be supplied as the predetermined gas.

[0040] like Figure 5 As shown, a predetermined gas such as a first cleaning gas can be supplied from the supply port 231p to a gas flow space (hereinafter referred to as a flow path space) formed in the exhaust pipe 231e, and in particular, the gate valve 244a and the APC valve 244b are configured as close as possible to each other on the exhaust pipe 231. That is, by making the flow path space smaller, even if the first cleaning gas introduced from the supply port 231p has a small flow rate, the flow path space can be filled with the first cleaning gas by adjusting the valve opening of the APC valve 244b, and the by-products attached to the APC valve 244b (especially the valve) can be effectively removed, and the consumption of the cleaning gas can be suppressed to a low level. In addition, the gate valve 244a and the APC valve 244b are sometimes collectively referred to as the valve section 244.

[0041] like Figure 5 As shown, in order to make the clean gas introduced from the supply port 231p flow effectively throughout the flow path space, the supply port 231p is arranged in the middle (center) of the position of the gate valve 244a arranged on the exhaust pipe 231 and the position of the APC valve 244b arranged on the exhaust pipe 231. In addition, similarly, in order to make the clean gas introduced from the supply port 231p flow effectively throughout the flow path space, the direction of the clean gas introduced from the supply port 231p is perpendicular (orthogonal) to the direction of the gas flowing in the exhaust pipe 231. Moreover, the piping length L between these gate valves 244a and APC valves 244b is more than 100 mm. The lower limit of 100 mm is the shortest distance required when the clean gas supply line including the supply port 231p is connected to the exhaust pipe 231. The upper limit of the pipe length L is determined according to the cleaning treatment conditions described later, so it cannot be determined in general. However, for example, under the treatment conditions of the first cleaning treatment described later that is performed in parallel with the atmospheric pressure recovery process described later, if an example is shown, when the diameter of the exhaust pipe 231 is 200 mm, the upper limit of the pipe length L is preferably 4 m (4000 mm) or less, and when the diameter of the exhaust pipe 231 is 100 mm, the upper limit of the pipe length L is preferably 16 m (16000 mm) or less. In addition, the upper limit of the pipe length L may also change depending on the type of membrane or the type of cleaning gas. As described above, in this specification, a pipe length L of less than 4 m is the same as a case where the pipe length L is shorter.

[0042] In addition, a plurality of supply ports 231p may be provided in the exhaust pipe 231, as long as at least one of the plurality of supply ports 231p is provided in the exhaust pipe 231e. For example, the other supply ports 231p may be provided on the downstream side of the APC valve 244b. The exhaust system is mainly composed of the exhaust pipe 231, the gate valve 244a, the APC valve 244b, and the pressure sensor 245. In addition, it is also conceivable to include the supply port 231p and the vacuum pump 246 connected to the exhaust pipe 231e in the exhaust system. The exhaust system can also be called an exhaust system.

[0043] A sealing cover 219 as a first cover body is provided below the manifold 209, which can hermetically seal the lower end opening of the manifold 209, that is, the opening for the wafer 200 to enter and exit. The sealing cover 219 is made of a metal material such as SUS, for example, and is formed in a disc shape. An O-ring 220b as a sealing member abutting against the lower end of the manifold 209 is provided on the upper surface of the sealing cover 219. A rotating mechanism 267 for rotating the wafer boat 217 described later is provided below the sealing cover 219. The rotating shaft 255 of the rotating mechanism 267 passes through the sealing cover 219 and is connected to the wafer boat 217. The rotating mechanism 267 is configured to rotate the wafer 200 by rotating the wafer boat 217. The sealing cover 219 is configured to be lifted and lowered in the vertical direction by the wafer boat elevator 115 as a lifting mechanism provided outside the reaction tube 203. The wafer boat elevator 115 is configured as a transport device (transport mechanism) that moves the wafer 200 into and out of the processing chamber 201 by raising and lowering the sealing cover 219. In addition, a gate 219s as a second cover is provided below the manifold 209. The gate 219s can hermetically seal the lower end opening of the manifold 209 when the sealing cover 219 is lowered and the wafer boat 217 is moved out of the processing chamber 201. The gate 219s is made of a metal material such as SUS, for example, and is formed in a disc shape. An O-ring 220c as a sealing member that abuts against the lower end of the manifold 209 is provided on the upper surface of the gate 219s. The opening and closing action (lifting and lowering action and rotation action, etc.) of the gate 219s is controlled by the gate opening and closing mechanism 115s.

[0044] The wafer boat 217 as a substrate support supports a plurality of wafers 200, for example, 25 to 200 wafers 200, in a horizontal posture and in a state where the centers are aligned and arranged in a vertical direction in multiple layers, that is, arranged at intervals. The wafer boat 217 is made of a heat-resistant material such as quartz or SiC. A plurality of heat insulation plates 218 made of a heat-resistant material such as quartz or SiC are supported at the bottom of the wafer boat 217.

[0045] A temperature sensor 263 as a temperature detector is provided in the reaction tube 203. The temperature in the processing chamber 201 is adjusted to a desired temperature distribution by adjusting the power supply to the heater 207 based on the temperature information detected by the temperature sensor 263. The temperature sensor 263 is provided along the inner wall of the reaction tube 203.

[0046] like Figure 3 As shown, the control unit (control mechanism), i.e., the controller 121, is configured as a computer having a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, the storage device 121c, and the I / O port 121d can exchange data with the CPU 121a via an internal bus 121e. The controller 121 is connected to an input / output device 122 such as a touch panel.

[0047] The storage device 121c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), etc. In the storage device 121c, a control program for controlling the action of the substrate processing device, a process recipe that records the steps and conditions of the substrate processing described later, a cleaning recipe that records the steps and conditions of the cleaning processing described later, etc. are stored in a readable manner. The process recipe and the cleaning recipe are respectively a combination of the steps of the substrate processing and the cleaning processing described later in a manner that enables the controller 121 to execute and obtain a predetermined result, and function as a program. Hereinafter, the process recipe, the cleaning recipe, the control program, etc. are collectively referred to as a program. In addition, the process recipe and the cleaning recipe are referred to as recipes. When the term program is used in this specification, sometimes only the recipe body is included, sometimes only the control program body is included, or sometimes both are included. RAM121b is configured as a storage area (work area) for temporarily holding programs, data, etc. read out by CPU121a.

[0048] The I / O port 121d is connected to the above-mentioned MFC241a~241e, valves 243a~243e, pressure sensor 245, gate valve 244a, APC valve 244b, vacuum pump 246, temperature sensor 263, heater 207, rotating mechanism 267, wafer boat elevator 115, gate opening and closing mechanism 222, etc.

[0049] The CPU 121a reads out and executes a control program from the storage device 121c, and reads out a recipe from the storage device 121c according to input of an operation command from the input / output device 122. The CPU 121a controls the flow rate adjustment of various gases by the MFCs 241a to 241e, the opening and closing of the valves 243a to 243e, the opening and closing of the gate valve 244a, the opening and closing of the APC valve 244b, the pressure adjustment of the APC valve 244b based on the pressure sensor 245, the start and stop of the vacuum pump 246, the temperature adjustment of the heater 207 based on the temperature sensor 263, the rotation and speed adjustment of the wafer boat 217 by the rotating mechanism 267, the lifting and lowering of the wafer boat 217 by the wafer boat elevator 115, the opening and closing of the gate 219s by the gate opening and closing mechanism 115s, etc., in accordance with the contents of the read-out recipe.

[0050] The controller 121 can be configured by installing the above-mentioned program stored in an external storage device (e.g., a magnetic disk such as an HDD, an optical disk such as a CD, a magneto-optical disk such as an MO, a semiconductor memory such as a USB memory) 123 on a computer. The storage device 121c and the external storage device 123 are configured as a computer-readable storage medium. Hereinafter, they will be collectively referred to as storage media. When the term storage medium is used in this specification, sometimes only the storage device 121c monomer is included, sometimes only the external storage device 123 monomer is included, or sometimes both are included. In addition, the program can be provided to the computer using a communication mechanism such as a network or a dedicated line instead of using the external storage device 123.

[0051] (2) Substrate processing steps

[0052] use Figure 4 , an example of a sequence of forming a film on a wafer 200 as a substrate as one process of a semiconductor device manufacturing process using the above-mentioned substrate processing apparatus is described. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the controller 121. This point is also the same in the first and second cleaning processes described later.

[0053] In the film forming sequence of this embodiment, a cycle of step 1, step 2 and step 3 is performed non-simultaneously for a predetermined number of times (n times, n is an integer greater than 1), wherein step 1 is to supply a processing gas (raw material gas) to the wafer 200 in the processing container, step 2 is to supply a processing gas (nitriding agent) to the wafer 200 in the processing container, and step 3 is to supply a processing gas (oxidizing agent) to the wafer 200 in the processing container.

[0054] When the term "wafer" is used in this specification, it sometimes refers to the wafer itself, and sometimes refers to a stack of a wafer and a predetermined layer or film formed on its surface. When the term "surface of a wafer" is used in this specification, it sometimes refers to the surface of the wafer itself, and sometimes refers to the surface of a predetermined layer, etc. formed on the wafer. When it is recorded in this specification as "forming a predetermined layer on a wafer", it sometimes refers to directly forming a predetermined layer on the surface of the wafer itself, and sometimes refers to forming a predetermined layer on a layer, etc. formed on the wafer. When the term "substrate" is used in this specification, it is also synonymous with the term "wafer".

[0055] (Wafer loading ~ Wafer boat loading)

[0056] When a plurality of wafers 200 are loaded (wafer loading) on ​​the wafer boat 217, the gate 219s is moved by the gate opening and closing mechanism 115s, and the lower end opening of the manifold 209 is opened (gate opening). Figure 1 As shown, the boat 217 supporting a plurality of wafers 200 is lifted by the boat elevator 115 and carried (boat loading) into the processing chamber 201. In this state, the seal cap 219 seals the lower end of the manifold 209 via the O-ring 220b.

[0057] (Pressure adjustment and temperature adjustment)

[0058] The vacuum pump 246 performs vacuum exhaust (decompression exhaust) so that the space in the processing chamber 201, that is, the space where the wafer 200 is located, becomes the desired pressure (vacuum degree). At this time, the pressure of the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 244b is feedback-controlled based on the measured pressure information. In addition, the gate valve 244a is opened in advance before vacuum exhaust. In addition, the heater 207 performs heating so that the wafer 200 in the processing chamber 201 becomes the desired processing temperature. At this time, the power supply status to the heater 207 is feedback-controlled based on the temperature information detected by the temperature sensor 263 so that the processing chamber 201 becomes the desired temperature distribution. In addition, the rotation mechanism 267 starts to rotate the wafer 200. The operation of the vacuum pump 246, the heating and rotation of the wafer 200 are all continued at least until the processing of the wafer 200 is completed. The processing temperature in this specification refers to the temperature of the wafer 200 or the temperature in the processing chamber 201, and the processing pressure refers to the pressure in the processing chamber 201. This also applies to the following description.

[0059] (Film forming treatment)

[0060] After that, the following steps 1 to 3 are carried out in sequence.

[0061] [Step 1]

[0062] In this step, a source gas is supplied to the wafer 200 in the processing chamber 201 .

[0063] Specifically, the valve 243a is opened to flow the processing gas (raw gas) into the gas supply pipe 232a. The raw gas is adjusted in flow rate by the MFC 241a, supplied to the processing chamber 201 through the nozzle 249a, and discharged from the exhaust pipe 231. At this time, the raw gas is supplied to the wafer 200. At this time, the valves 243c and 243d may also be opened to flow the inactive gas into the gas supply pipes 232c and 232d.

[0064] The processing conditions of this step are exemplified as follows:

[0065] Raw material gas supply flow rate: 1 to 2000 sccm, preferably 10 to 1000 sccm,

[0066] Inert gas supply flow rate (per gas supply pipe): 0~10000sccm,

[0067] Each gas supply time: 1 to 120 seconds, preferably 1 to 60 seconds,

[0068] Processing temperature: 250-800°C, preferably 400-700°C,

[0069] Processing pressure: 1-2666Pa, preferably 67-1333Pa.

[0070] In addition, the notation of a numerical range such as "1 to 2000 sccm" in this specification means that the lower limit and the upper limit are included in the range. Therefore, for example, "1 to 2000 sccm" means "above 1 sccm and below 2000 sccm". The same applies to other numerical ranges. In addition, in the case where the supply flow rate includes 0 sccm, 0 sccm means an example of not supplying the substance (gas). This also applies to the following description.

[0071] By supplying the source gas to the wafer 200 under the above-mentioned conditions, a layer containing a predetermined element is formed as a first layer on the outermost surface of the wafer 200 .

[0072] After the first layer is formed on the wafer 200, the valve 243a is closed to stop the supply of the raw material gas into the processing chamber 201. Then, the processing chamber 201 is vacuum-exhausted to remove the gas remaining in the processing chamber 201 from the processing chamber 201. At this time, the valves 243c and 243d are opened to supply an inactive gas to the processing chamber 201. The inactive gas acts as a purge gas. As a purge gas, in addition to N2 gas, various rare gases such as Ar gas, He gas, Ne gas, and Xe gas can be used. As an inactive gas, one or more of these can be used.

[0073] This also applies to step 2 described later.

[0074] [Step 2]

[0075] After step 1 is completed, a processing gas (reactive gas (nitriding agent)) is supplied to the wafer 200 in the processing chamber 201 , that is, the first layer formed on the wafer 200 .

[0076] Specifically, the valves 243b to 243d are opened and closed in the same order as the valves 243a, 243c, and 243d in step 1. The reaction gas is flow-controlled by the MFC 241b, supplied to the processing chamber 201 through the nozzle 249b, and exhausted from the exhaust pipe 231. At this time, the reaction gas is supplied to the wafer 200.

[0077] The processing conditions of this step are exemplified as follows:

[0078] Reaction gas supply flow rate: 100~10000sccm,

[0079] Processing pressure: 1-4000Pa, preferably 1-3000Pa.

[0080] The other processing conditions are the same as those in step 1.

[0081] By supplying the reaction gas to the wafer 200 under the above conditions, at least a portion of the first layer formed on the wafer 200 in step 1 can be modified (eg, nitrided). By modifying the first layer in this way, the second layer is formed on the wafer 200 .

[0082] After the second layer is formed on the wafer 200, the valve 243b is closed to stop the supply of the reaction gas to the processing chamber 201. Then, the gas remaining in the processing chamber 201 is exhausted from the processing chamber 201 through the same processing sequence as step 1.

[0083] [Step 3]

[0084] After step 2 is completed, a reaction gas (oxidant) is supplied to the wafer 200 in the processing chamber 201 , that is, the second layer formed on the wafer 200 .

[0085] Specifically, the valves 243b to 243d are switched on and off in the same order as the valves 243a, 243c, and 243d in step 1. The reaction gas is flow-regulated by the MFC 241b, supplied to the processing chamber 201 through the nozzle 249b, and exhausted from the exhaust pipe 231. At this time, the reaction gas is supplied to the wafer 200.

[0086] The processing conditions of this step are exemplified as follows:

[0087] Reaction gas supply flow rate: 100~10000sccm,

[0088] Processing pressure: 1-4000Pa, preferably 1-3000Pa.

[0089] The other processing conditions are the same as those in step 1.

[0090] By supplying the reaction gas to the wafer 200 under the above conditions, at least a portion of the second layer formed on the wafer 200 in step 2 can be modified (oxidized). By modifying the second layer in this way, a silicon oxynitride layer (SiON layer) is formed on the wafer 200, for example.

[0091] After the third layer is formed on the wafer 200, the valve 243b is closed to stop the supply of the reaction gas to the processing chamber 201. Then, the gas remaining in the processing chamber 201 is exhausted from the processing chamber 201 through the same processing sequence as step 1.

[0092] [Scheduled number of implementations]

[0093] By performing the cycle of steps 1 to 3 non-simultaneously, i.e., asynchronously, a predetermined number of times (n times, n being an integer greater than 1), a film of a predetermined composition and a predetermined film thickness can be formed on the wafer 200. It is preferred to repeat the above cycle a plurality of times. That is, it is preferred that the thickness of the third layer formed in each cycle is thinner than the desired film thickness until the film thickness of the film formed by stacking the third layer reaches the desired film thickness, and the above cycle is repeated a plurality of times.

[0094] (Post-purge and atmospheric pressure recovery)

[0095] After the film forming process is completed, inert gas is supplied to the process chamber 201 from the gas supply pipes 232c and 232d, respectively, and exhausted from the exhaust pipe 231. Thus, the process chamber 201 is purged, and the gas and reaction by-products remaining in the process chamber 201 are removed from the process chamber 201 (post-purging). After the ambient gas of the process chamber 201 is replaced with inert gas (inert gas replacement), the APC valve 244b is set to fully closed (completely closed). After that, the supply of inert gas to the process chamber 201 is continued, so that the pressure of the process chamber 201 is restored to normal pressure (atmospheric pressure recovery).

[0096] (Wafer boat unloading ~ wafer release)

[0097] After that, the sealing cover 219 is lowered by the wafer boat elevator 115, the lower end of the manifold 209 is opened, and the processed wafers 200 are carried out from the lower end of the manifold 209 to the outside of the reaction tube 203 while being supported by the wafer boat 217 (wafer boat unloading). After the wafer boat is unloaded, the gate 219s is moved, and the lower end opening of the manifold 209 is sealed by the gate 219s via the O-ring 220c (gate closing). After the processed wafers 200 are carried out to the outside of the reaction tube 203, they are taken out from the wafer boat 217 (wafer release).

[0098] (3) First cleaning process

[0099] When the above-mentioned substrate processing (batch processing), i.e., film forming processing, is performed, byproducts are attached at least inside the exhaust system, i.e., on the inner wall of the exhaust pipe 231 including the exhaust pipe 231e, the APC valve 244b, the inside of the vacuum pump 246, and other surfaces.

[0100] When the byproducts attached to the inside of the exhaust system are repeatedly subjected to batch processing while remaining attached to the inside of the exhaust system, they sometimes solidify (Fix) depending on the number of batch processing times. Even if a clean gas is supplied to the inside of the exhaust system, the solidified byproducts are difficult to etch and tend to be difficult to remove from the inside of the exhaust system. In particular, the butterfly-type APC valve mainly used in the range of 100 mm to 200 mm in diameter of the exhaust pipe 231 cannot be closed due to the adhesion of the byproducts, and an alarm error signal (warning) is issued, requiring maintenance. Therefore, in the present embodiment, the above-mentioned film forming process is performed for several batches, preferably one batch, that is, before the byproducts solidify inside the exhaust system, the clean gas is directly supplied to the exhaust system without passing through the processing container, thereby cleaning the exhaust system. In addition, the number of batch processing times refers to the number of substrate processing operations from wafer loading to wafer release. Here, in this specification, the cleaning process performed on the inside of the exhaust system is referred to as the "first cleaning process."

[0101] When cleaning the exhaust system (first cleaning process), the gate valve 244a is set to a fully closed state, and the valve 243e is opened, thereby circulating the first cleaning gas to the flow path space formed in the gas supply pipe 232e. The first cleaning gas is flow-adjusted by the MFC 241e, and is supplied to the inside of the exhaust pipe 231 including the exhaust pipe 231e and the inside of the vacuum pump 246 through the supply port 231p while the valve of the APC valve 244b is adjusted, especially to the inner wall of the exhaust pipe 231e, the surface of the APC valve 244b, and the surface of the components inside the vacuum pump 246. At this time, a thermochemical reaction (etching reaction) occurs between the first cleaning gas and the by-products, and the by-products are removed from the exhaust system. In addition, when performing this process, the vacuum pump 246 can be in a stopped state or in a working state.

[0102] In addition, at this time, while the first cleaning gas is supplied through the supply port 231p, the opening of the APC valve 244b is fixed (pressure is constant) to a predetermined value of exhaust conductance such that the first cleaning gas fills the flow path space. Thus, since the APC valve 244b is not operated, the first cleaning gas can be brought into uniform contact with the entire surface of the APC valve 244b, and thus byproducts attached to the APC valve 244b (particularly the valve) can be effectively removed by the first cleaning gas.

[0103] In addition, as a condition for filling the flow path space with the cleaning gas, it is desirable to set the condition to minimize the fully closed valve opening (opening 0%). Thus, a space (enclosed space) can be formed that also closes the flow path space with respect to the exhaust pipe 231 on the processing chamber 201 side and the exhaust pipe 231 on the vacuum pump 246 side, and the cleaning gas can contact the APC valve 244b, so that by-products attached to the APC valve 244b can be removed.

[0104] In this embodiment, the butterfly type APC used cannot be completely closed (opening degree 0%) due to its structure, but the minimum condition for the valve opening degree to fill the flow path space with clean gas is that the valve opening degree is set to 0% (fully closed). Figure 5 The state of valve V0 shown. In addition, as the maximum condition for the valve opening, it is preferable to have an opening degree such that the flow of the cleaning gas introduced from the supply port 231p does not hit (collide with) the APC valve 244b (especially the back side (back side) of the valve). In this embodiment, Figure 5The state of the valve V1 shown, i.e., based on the flow direction in the exhaust pipe 231, until the valve rotation angle reaches 45 degrees, is the permissible range for filling the clean gas. In addition, in the present embodiment, until the valve rotation angle reaches 15 degrees, the clean gas introduced from the supply port 231p will not be directly blown to the back side (back side) of the valve. That is, the rotation angle of the valve for filling the clean gas is greater than 0 degrees and less than 45 degrees, preferably greater than 0 degrees and less than 15 degrees. In the present embodiment, if the opening is greater than Figure 5 If the state of V1 shown is large, the cleaning gas contacts a part of the APC valve 244b (particularly the valve) before filling the flow path space, and the part of the APC valve 244b is cleaned excessively, which may cause particles.

[0105] In addition, as described above, it is impossible to substantially fully close, so when the setting is set to 0% opening, the cleaning results are sometimes different due to the mechanical differences of the APC valve 244b. Specifically, in order for the valve to operate, a gap between the inner wall of the exhaust pipe 231 and the two ends of the valve when the opening is set to 0%, and it is almost difficult to make the gap constant. Therefore, as a condition for the opening of the APC valve 244b that enables the clean gas to fill the flow path space, the opening is set to be greater than 0% and less than a few%, thereby greatly reducing the mechanical differences. For example, the opening is greater than 2% and less than 4%. In addition, in the present embodiment, the valve opening (or the rotation angle of the valve) of the APC valve 244b is determined according to the volume of the flow path space and the flow rate of the clean gas. Therefore, it goes without saying that the above-mentioned valve opening (valve rotation angle) condition is only an example.

[0106] The frequency of performing the first cleaning treatment is higher than the frequency of performing the second cleaning treatment described later. For example, the frequency of performing the first cleaning treatment is set to every several batches, preferably every batch, as described above, and the frequency of performing the second cleaning treatment is set to every 300 to 500 batches. By performing the first cleaning treatment at such a high frequency, etching can be performed in an unfavorable state before the by-products solidify on the components provided in the exhaust system. Thus, the by-products attached to the components provided in the exhaust system can be easily and reliably, that is, efficiently and effectively removed from the exhaust section.

[0107] The first cleaning process is preferably performed after the film forming process is completed and before the next film forming process is started. That is, the first cleaning process is preferably performed during the implementation of the batch process. In this way, after the film forming process is completed, the first cleaning process is quickly performed before the by-products attached to the exhaust section solidify, thereby enabling the by-products to be more reliably removed from the exhaust section.

[0108] The first cleaning process can be performed while the wafer 200 is contained in the processing container. Specifically, the first cleaning process can be performed after the wafer 200 is contained in the processing container and before the film forming process is started (after the film is moved in and before the film is formed). In addition, the first cleaning process can also be performed after the film forming process is completed and before the wafer 200 that has undergone the film forming process is moved out of the processing container (after the film is formed and before the film is moved out). In addition, the first cleaning process can also be performed while the film forming process is performed. In this way, productivity can be improved.

[0109] In addition, the first cleaning process can also be performed after the film forming process is completed and the wafer 200 subjected to the film forming process is unloaded from the processing container, that is, when the wafer 200 is not contained in the processing container. Specifically, the first cleaning process can also be performed during the period after the wafer 200 subjected to the film forming process is unloaded from the processing container and before the wafer 200 subjected to the next film forming process is contained in the processing container (the period after unloading and before loading). If the first cleaning process is performed during the period after unloading and before loading, the standby period between film forming processes (for example, the period required for wafer release and wafer loading) can be effectively utilized.

[0110] In this way, the first cleaning process can be performed in either a state where the wafer 200 is contained in the processing container or a state where the wafer 200 is not contained in the processing container. In any of these cases, the lower end opening of the manifold 209 is not opened, and the first cleaning process is performed in a state where the cover body such as the sealing cover 219 and the gate 219s is sealed. In addition, in any of these cases, the first cleaning process is performed in a state where the exhaust valve, i.e., the gate valve 244a, which is located upstream of the portion of the exhaust pipe 231e where the supply port 231p is provided is set to be fully closed. By performing the first cleaning process in a state where the gate valve 244a is set to be fully closed, the backflow of the clean gas supplied to the exhaust system into the processing container can be prevented. In addition, by performing the first cleaning process in a state where the lower end opening of the manifold 209 is sealed, even if the clean gas supplied to the exhaust system flows back into the processing container, the release (leakage) of the clean gas outside the processing container can be prevented. Therefore, by doubly performing the opening and closing control (safety control) of each of the lower end opening of the manifold 209 and the APC valve 244 b , the safety of the first cleaning process can be improved.

[0111] like Figure 4As shown, in the substrate processing sequence of the present embodiment, the first cleaning process is started after the above-mentioned post-purge is completed and is completed before the wafer boat unloading is started. That is, the first cleaning process is performed in parallel with the atmospheric pressure recovery. In this case, the first cleaning process is started quickly after the film forming process is completed, so that the by-products can be easily and reliably removed from the exhaust section. In addition, at the timing of starting the first cleaning process, that is, when the atmospheric pressure recovery is started, the gate valve 244a is set to a fully closed state as described above, and the lower end opening of the sealing cover 219 is made to be in a sealed state, so that the first cleaning process can also be performed safely.

[0112] The processing conditions of this step are exemplified as follows:

[0113] First cleaning gas supply flow rate: 3000~6000sccm,

[0114] Gas supply time: 3 to 10 minutes,

[0115] Temperature in exhaust system: 50~100℃

[0116] Pressure in the exhaust system: 1330Pa (10Torr) ~ 101300Pa (atmospheric pressure).

[0117] (4) Second cleaning process

[0118] When the above-mentioned substrate processing (batch processing), i.e., film forming processing, is repeatedly performed, deposits including thin films are accumulated inside the processing container, such as the inner wall of the reaction tube 203, the surface of the nozzles 249a, 249b, the surface of the wafer boat 217, etc. That is, the deposits including thin films adhere to the surfaces of the components in the heated processing chamber 201 and accumulate. After the amount of these deposits, i.e., the accumulated film thickness reaches a predetermined amount (thickness) before the deposits peel off or fall off, the processing container is cleaned. In this specification, this treatment performed on the processing container is referred to as "second cleaning treatment". An example of the second cleaning treatment of this embodiment is described below.

[0119] (On board the crystal boat)

[0120] After the above-mentioned batch processing, i.e., substrate processing from wafer loading to wafer release, is performed, for example, 300 to 500 times, the gate opening and closing mechanism 115s moves the gate 219s, and the lower end opening of the manifold 209 is opened (the gate is opened). Thereafter, the empty wafer boat 217 without wafers 200 loaded thereon is lifted up by the boat elevator 115 and carried into the processing chamber 201. In this state, the sealing cap 219 is in a state of sealing the lower end of the manifold 209 via the O-ring 220b.

[0121] (Pressure adjustment and temperature adjustment)

[0122] The vacuum pump 246 is used to perform vacuum exhaust so that the pressure in the processing chamber 201 is set to a predetermined pressure. The vacuum pump 246 is kept in an operating state at least until the second cleaning process is completed. In addition, the heater 207 is used to heat the processing chamber 201 so that the temperature in the processing chamber 201 is set to a predetermined temperature. In addition, the rotation mechanism 267 starts to rotate the wafer boat 217. The heating of the processing chamber 201 by the heater 207 and the rotation of the wafer boat 217 are continued at least until the cleaning step described later is completed. However, the wafer boat 217 does not have to rotate.

[0123] (Cleaning steps)

[0124] Next, the second cleaning gas is supplied to the processing container after the above-mentioned film forming process is repeated. In this step, the valve 243a, 243c, and 243d are switched on and off in the same order as the switching control of the valves 243a, 243c, and 243d in step 1 of the film forming process, while the valve 243b is closed. The second cleaning gas is flow-regulated by the MFC 241a and supplied to the processing chamber 201 through the gas supply pipe 232a and the nozzle 249a.

[0125] When the second cleaning gas supplied to the processing chamber 201 passes through the processing chamber 201 and is exhausted from the exhaust pipe 231, it contacts the surfaces of the components of the processing chamber 201, such as the inner wall of the reaction tube 203, the surfaces of the nozzles 249a and 249b, the surface of the wafer boat 217, the inner wall of the manifold 209, the upper surface of the sealing cover 219, etc. At this time, a thermochemical reaction (etching reaction) occurs between the second cleaning gas and the deposits, and as a result, the deposits are removed from the processing chamber 201.

[0126] (Post-Purge and Atmospheric Pressure Restoration Steps)

[0127] After the cleaning step is completed, the valve 243a is closed to stop the supply of the second cleaning gas into the processing chamber 201. Then, the processing chamber 201 is purged (post-purge) in the same processing sequence as the post-purge of the film forming process. At this time, the opening and closing actions of the valves 243c and 243d can also be repeated to intermittently purge the processing chamber 201 (circular purge). After that, the ambient gas in the processing chamber 201 is replaced with an inert gas (inert gas replacement), and the pressure of the processing chamber 201 is restored to normal pressure (atmospheric pressure recovery).

[0128] (Unloading of crystal boat)

[0129] After that, the sealing cover 219 is lowered by the wafer boat elevator 115, the lower end of the manifold 209 is opened, and the empty wafer boat 217 is carried out from the lower end of the manifold 209 to the outside of the reaction tube 203 (wafer boat unloading). After the wafer boat is unloaded, the gate 219s is moved, and the lower end opening of the manifold 209 is sealed by the gate 219s via the O-ring 220c. When these series of steps are completed, the above-mentioned film forming process is started again.

[0130] (Variation Example)

[0131] By dividing the above-mentioned first cleaning process into two cleaning steps, namely, a first exhaust cleaning step and a second exhaust cleaning step, the exhaust pipe 231 (particularly, the exhaust system) can be cleaned efficiently.

[0132] Even if the above-mentioned first cleaning process can remove byproducts in the exhaust system, for example, when the first cleaning gas is supplied with the APC valve 244b opened, the APC valve 244b is operated to adjust the opening degree of the APC valve 244b, and the first cleaning gas may not flow through the exhaust system in uniform contact with the entire surface of the APC valve 244b. As a result, there is a concern that byproducts attached to the surface of the APC valve 244b cannot be uniformly removed.

[0133] In the first exhaust cleaning process, the gate valve 244a is set to a fully closed state, and the valve 243e is opened, thereby circulating the first cleaning gas into the gas supply pipe 232e through the supply port 231p. Then, while keeping the opening of the APC valve 244b fixed at a predetermined value, the flow path space formed in the gas supply pipe 232e is filled with the first cleaning gas. As a result, the first cleaning gas can be spread over the entire surface of the APC valve 244b, so that the by-products attached to the surface of the APC valve 244b can be removed. In addition, as long as the first cleaning gas can fill the closed space, the opening of the APC valve 244b may not be fully closed (zero). In addition, on the exhaust pipe 231, the closer the gate valve 244a and the APC valve 244b are arranged, the smaller the flow path space is, so the time for supplying the first cleaning gas in the first exhaust cleaning process can be shortened. In addition, multiple supply ports 231p can also be provided. As a result, the time for filling the flow path space with the first cleaning gas can be shortened. For example, when the flow rate of the first cleaning gas reaches a predetermined flow rate, or the supply time of the first cleaning gas reaches a predetermined time, the process proceeds to the second exhaust cleaning step.

[0134] In the second exhaust cleaning process, while continuing to set the gate valve 244a to be fully closed and opening the valve 243e, the first cleaning gas is circulated into the gas supply pipe 232e through the supply port 231p, and the opening is set to be larger than the predetermined value, and the APC valve 244b is set to an open state to the extent that the cleaning gas cannot fill the flow path space. At this time, the first cleaning gas can also be supplied while adjusting the opening of the APC valve 244b, but it is preferred to set the APC valve 244b to be fully open. As a result, the flow rate of the first cleaning gas can be supplied more to the exhaust system after the APC valve 244b, so that by-products attached to the inner wall of the exhaust pipe 231e, the surface of the APC valve 244b, and the surface of the components inside the vacuum pump 246 can be removed. In addition, the first exhaust cleaning process and the second exhaust cleaning process can also be repeated.

[0135] As the cleaning gas, a gas containing a halogen element can be used, and a gas containing a fluorine element can also be used. For example, fluorine (F2) gas, chlorine fluoride (ClF3) gas, nitrogen fluoride (NF3) gas, hydrogen fluoride (HF) gas, etc. can be used. As the cleaning gas, one or more of them can be used.

[0136] Here, as the raw material gas, in addition to hexachlorodisilane (Si2Cl6, referred to as HCDS) gas, monochlorosilane (SiH3Cl, referred to as MCS) gas, dichlorosilane (SiH2Cl2, referred to as DCS) gas, trichlorosilane (SiHCl3, referred to as TCS) gas, tetrachlorosilane (SiCl4, referred to as STC) gas, octachlorotrisilane (Si3Cl8, referred to as OCTS) gas and other chlorosilane gases can also be used. In addition, as the raw material gas, tetrafluorosilane (SiF4) gas, tetrabromosilane (SiBr4) gas, tetraiodosilane (SiI4) gas and the like can be used. In addition, as the raw material gas, various halogenated silane gases such as chlorosilane gas, fluorosilane gas, bromosilane gas, iodosilane gas can be used. As the raw material gas, one or more of them can be used.

[0137] In addition, various ammoniasilane gases such as bis(diethylammonio)silane (SiH2[N(C2H5)2]2, abbreviated as BDEAS) gas, bis(tert-butylammonio)silane (SiH2[NH(C4H9)]2, abbreviated as BTBAS) gas, tri(diethylammonio)silane (SiH[N(C2H5)2]3, abbreviated as 3DEAS) gas, tri(dimethylammonio)silane (SiH[N(CH3)2]3, abbreviated as 3DMAS) gas, tetra(diethylammonio)silane (Si[N(C2H5)2]4, abbreviated as 4DEAS) gas, and tetra(dimethylammonio)silane (Si[N(CH3)2]4, abbreviated as 4DMAS) gas can be used as raw material gases. As raw material gases, one or more of them can be used.

[0138] In addition, in the above-mentioned embodiment, an example of using N2 gas as an inert gas is described, but it is not limited to this, and rare gases such as Ar gas, He gas, Ne gas, and Xe gas can also be used. As the inert gas, one or more of them can be used. However, in this case, it is necessary to prepare a rare gas source.

[0139] When the reaction gas is a nitriding agent, in addition to ammonia (NH3) gas, diimide (N2H2) gas, hydrazine (N2H4) gas, N3H8 gas, gas containing these compounds, etc. As the nitriding agent, one or more of them can be used.

[0140] When the reaction gas is an oxidant, as the oxidant, in addition to O2 gas, nitrous oxide (N2O) gas, nitric oxide (NO) gas, nitrogen dioxide (NO2) gas, ozone (O3) gas, hydrogen peroxide (H2O2) gas, water vapor (H2O) gas, carbon monoxide (CO) gas, carbon dioxide (CO2) gas, etc. can be used. As the oxidant, one or more of them can be used.

[0141] (5) Effects of this embodiment

[0142] According to this embodiment, one or more of the following effects can be obtained.

[0143] (a) By making the frequency of performing the first cleaning process higher than the frequency of performing the second cleaning process, the by-products attached to the exhaust system can be etched in an undesirable state before the by-products solidify. Thus, the by-products attached to the exhaust system can be easily and reliably removed from the exhaust system. As a result, the maintenance frequency of the components provided in the exhaust system can be reduced. For example, the frequency of performing the replacement operation of the vacuum pump 246 can be lower than the frequency of performing the second cleaning process.

[0144] (b) By performing the first cleaning process every several batches, preferably every batch, after the film forming process is completed and before the next film forming process is started, the above-mentioned effect can be obtained more reliably.

[0145] (c) By performing the first cleaning process every several batches, preferably every batch, after the film forming process is completed and before the wafers 200 having undergone the film forming process are unloaded from the processing container, the above-mentioned effect can be obtained more reliably.

[0146] (d) In the first cleaning process, a cleaning gas is supplied to a flow path space formed in the exhaust pipe at a position downstream of the gate valve 244a and upstream of the APC valve 244b, so that the cleaning gas fills the flow path space. As a result, the cleaning gas can contact the entire surface of the APC valve 244b, thereby removing attachments attached to the APC valve 244b.

[0147] (e) In the present embodiment, the gate valve 244a and the APC valve 244b can be brought close to each other, that is, the gate valve 244a is arranged close to the exhaust pipe 231, and the APC valve 244b is arranged close to the exhaust pipe 231. Therefore, in the first cleaning process, it is possible to achieve a structure that allows the cleaning gas introduced into the flow path space formed in the exhaust pipe 231 to be easily filled. Therefore, due to such a structure, the cleaning gas introduced into the flow path space can effectively contact the APC valve 244b, so that the attachments attached to the APC valve 244b can be removed.

[0148] (f) In the present embodiment, an inlet (supply port 231p) is provided for introducing gas into the flow path space formed in the exhaust pipe 231. That is, the clean gas can be supplied to the flow path space formed in the exhaust pipe 231 at a position downstream of the gate valve 244a and upstream of the APC valve 244b. Therefore, in the first cleaning process, the following structure can be adopted: by adjusting the opening of the APC valve 244b, the clean gas will not directly contact the back side (back side) of the APC valve 244b, and the clean gas can easily fill the flow path space. Therefore, due to such a structure, the clean gas introduced into the flow path space can effectively contact the APC valve 244b, so that the attachments attached to the APC valve 244b can be removed.

[0149] (g) By dividing the first cleaning process into two cleaning steps, namely the first exhaust cleaning step and the second exhaust cleaning step, the exhaust pipe 231 (particularly the exhaust system) can be cleaned efficiently.

[0150] (Other embodiments)

[0151] Although the embodiments of the present invention have been specifically described above, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the gist of the present invention.

[0152] like Figure 6 As shown, the structure is such that a second gas supply unit for supplying a predetermined gas to the exhaust pipe 231 via a supply port 231P is provided on the downstream side of the APC valve 244b. Clean gas can also be supplied from the supply port 231P. According to such a structure, the flow rate of the gas supplied to the exhaust pipe 231 via the supply port 231P and the supply port 231P, the supply time of the gas, the type of gas, etc. can be appropriately changed, so that the by-products attached to the exhaust system can be easily and reliably removed from the exhaust system. In addition, this scheme can also obtain the same effect as the above-mentioned scheme.

[0153] In addition, the reactants contained in the reaction gas are not limited to nitrogen-containing gas as a nitriding agent and oxygen-containing gas as an oxidizing agent, and gases that react with the source to perform film processing can also be used to form other types of thin films. Furthermore, three or more processing gases can also be used for film formation.

[0154] In the above scheme, an example of forming a film using a batch-type substrate processing device that processes multiple substrates at a time is described. The present invention is not limited to the above scheme, and for example, it can also be applied to the case where a film is formed using a single-type substrate processing device that processes one or more substrates at a time. In addition, in the above scheme, an example of forming a film using a substrate processing device with a hot wall type processing furnace is described. The present invention is not limited to the above scheme, and it can also be applied to the case where a film is formed using a substrate processing device with a cold wall type processing furnace.

[0155] When these substrate processing apparatuses are used, each process can be performed in the same process order and process conditions as those of the above-mentioned embodiments and modified examples, and the same effects as those of the above-mentioned embodiments and modified examples can be obtained.

[0156] In addition, for example, in each of the above-mentioned embodiments, a film forming process in a semiconductor device is exemplified as a process performed by a substrate processing device, but the present invention is not limited thereto. That is, in addition to the film forming process, it may also be a process of forming an oxide film, a nitride film, or a process of forming a film containing a metal. In addition, the specific content of the substrate processing is not limited, and is not limited to the film forming process, but may also be applicable to other substrate processing such as annealing, oxidation, nitridation, diffusion, and photolithography.

[0157] Furthermore, the present invention can also be applied to other substrate processing devices, such as annealing devices, oxidation devices, nitridation devices, exposure devices, coating devices, drying devices, heating devices, plasma processing devices, etc. In addition, the present invention can also make these devices coexist.

[0158] In addition, the semiconductor manufacturing process is described in this embodiment, but the present invention is not limited thereto. For example, the present invention can also be applied to substrate processing such as the manufacturing process of liquid crystal devices, the manufacturing process of solar cells, the manufacturing process of light-emitting devices, the processing process of glass substrates, the processing process of ceramic substrates, and the processing process of conductive substrates.

[0159] In addition, a part of the structure of a certain embodiment can be replaced with the structure of other embodiments, and the structure of other embodiments can be added to the structure of a certain embodiment. In addition, with respect to a part of the structure of each embodiment, other structures can also be added, deleted, or replaced. That is, the above-mentioned schemes and variations can be used in appropriate combinations. At this time, the processing order and processing conditions can be, for example, the same as the processing order and processing conditions of the above-mentioned schemes and variations.

[0160] Explanation of symbols

[0161] 201—processing chamber, 231—exhaust pipe, 232e—gas supply pipe (gas supply part), 244a—first valve part (opening and closing valve, gate valve), 244b—second valve part (adjusting valve, APC valve).

Claims

1. A substrate processing device, characterized in that: have: a processing chamber for processing substrates; An exhaust pipe for discharging the ambient gas from the processing chamber; a first valve portion provided in the exhaust pipe and closing a flow path in the exhaust pipe; A second valve portion which is located close to the first valve portion on the exhaust pipe and is disposed on a downstream side of the first valve portion and adjusts a flow rate of gas flowing through a flow path in the exhaust pipe; as well as A gas supply portion is configured to be able to supply a predetermined gas to a flow path space formed in the exhaust pipe between the first valve portion and the second valve portion.

2. The substrate processing device according to claim 1, characterized in that: The first valve portion is configured to be capable of blocking the exhaust pipe on the upstream side of the first valve portion and the flow path space provided on the downstream side of the first valve portion.

3. The substrate processing device according to claim 1, characterized in that: The first valve portion is an on-off valve. The second valve portion is a regulating valve whose opening degree can be controlled.

4. The substrate processing device according to claim 1, characterized in that: The opening degree of the second valve portion is determined so as to fill the flow path space with the predetermined gas supplied thereto.

5. The substrate processing apparatus according to claim 1, wherein: The opening degree of the second valve portion is determined so that the flow of the predetermined gas supplied to the flow path space does not directly collide with the back side of the second valve portion.

6. The substrate processing device according to claim 5, characterized in that: The rotation angle of the second valve portion is greater than or equal to 0 degrees and less than or equal to 15 degrees.

7. The substrate processing device according to claim 4, characterized in that: The opening degree of the second valve portion is larger than 0%, and is greater than or equal to 2% and less than or equal to 4%.

8. The substrate processing device according to claim 4, characterized in that: The opening degree of the second valve portion is determined according to the volume of the flow path space and the flow rate of the predetermined gas.

9. The substrate processing apparatus according to claim 1, wherein: The opening degree of the second valve portion is constant while the predetermined gas is supplied to the flow path space.

10. The substrate processing apparatus according to claim 1, wherein: The direction of the predetermined gas is orthogonal to the direction of the gas flowing through the exhaust pipe.

11. The substrate processing apparatus according to claim 10, wherein: An inlet for introducing the predetermined gas into the flow path space is configured to be able to supply the predetermined gas toward the center of the flow path space.

12. The substrate processing apparatus according to claim 1, wherein: The length of the pipe between the first valve portion and the second valve portion is greater than or equal to 100 mm.

13. The substrate processing apparatus according to claim 1, wherein: The predetermined gas is a cleaning gas.

14. The substrate processing apparatus according to claim 13, wherein: The gas supply unit is configured to supply the cleaning gas to the flow path space at a predetermined flow rate or for a predetermined period of time.

15. The substrate processing apparatus according to claim 14, wherein: The second valve portion is configured to increase the opening degree of the second valve portion when the flow rate of the cleaning gas reaches a predetermined flow rate or the supply time of the cleaning gas reaches a predetermined time.

16. The substrate processing apparatus according to claim 13, wherein: A plurality of inlets for introducing the cleaning gas are also provided. Furthermore, the cleaning gas is configured to be supplied from each of the introduction ports to the flow path space.

17. The substrate processing apparatus according to claim 1, wherein: further comprising a second gas supply unit for supplying an inert gas to a downstream side of the second valve unit, The second gas supply unit is configured to be able to supply a cleaning gas.

18. The substrate processing apparatus according to claim 1, wherein: A control unit is provided, and the control unit is configured to be able to control the type of gas supplied from the gas supply unit, the gas flow rate, and the gas supply time.

19. An exhaust system, characterized in that: have: An exhaust pipe for exhausting the ambient gas from the processing chamber; a first valve portion provided in the exhaust pipe and closing a flow path in the exhaust pipe; A second valve portion which is located close to the first valve portion on the exhaust pipe and is disposed on a downstream side of the first valve portion and adjusts a flow rate of gas flowing through a flow path in the exhaust pipe; as well as A gas supply portion is configured to be able to supply a predetermined gas to a flow path space formed in the exhaust pipe between the first valve portion and the second valve portion.

20. A method for manufacturing a semiconductor device, characterized in that: The process includes a step of processing a substrate disposed in a processing chamber while exhausting the substrate through an exhaust system, wherein: The exhaust system has: An exhaust pipe for discharging the ambient gas from the processing chamber; a first valve portion provided in the exhaust pipe and closing a flow path in the exhaust pipe; a second valve portion which is disposed on the exhaust pipe adjacent to the first valve portion and on the downstream side of the first valve portion and adjusts the flow rate of gas flowing through the flow path in the exhaust pipe; and A gas supply portion is configured to be able to supply a predetermined gas to a flow path space formed in the exhaust pipe between the first valve portion and the second valve portion.

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