Ingot processing equipment

Abstract

The present invention discloses a crystal ingot processing device, which belongs to the field of semiconductor technology. The crystal ingot processing device includes a working module, including a laser irradiation unit and at least one grinding unit arranged in sequence along the processing station, and a handover unit and a cache unit are arranged on one side of the laser irradiation unit and the grinding unit; a crystal ingot storage unit, which is arranged at the loading end of the working module; a wafer storage unit, which is arranged at the unloading end of the working module; a transmission unit, including an annular guide rail and at least one mechanical arm component, the annular guide rail is arranged around the periphery of the working module, the mechanical arm component is arranged on the annular guide rail and can move along the direction in which the annular guide rail extends, and the mechanical arm component cooperates with the handover unit to transport the crystal ingot or the wafer to the target station. The present invention can automatically complete the cutting, stripping and grinding of the crystal ingot, improve production efficiency, and contribute to the mass production of wafers.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a crystal ingot processing device. Background Art

[0002] Third-generation semiconductor materials such as SiC, GaN or diamond have various excellent material properties, which determine that they can be well applied to power devices or LEDs and other devices.

[0003] Silicon carbide wafers are usually sliced ​​using wire cutting, but this processing technology causes great loss of material and is time-consuming, which has a great impact on the cost of silicon carbide.

[0004] Therefore, the following technology has been proposed: the single crystal SiC ingot is irradiated with the laser light by positioning the focal point of the laser light having a wavelength that is transparent to the single crystal SiC inside the single crystal SiC ingot, a peeling layer is formed on the predetermined cutting surface, and the SiC wafer is peeled from the single crystal SiC ingot along the predetermined cutting surface on which the peeling layer is formed.

[0005] However, the steps of forming a peeling layer on the single crystal SiC ingot, peeling the SiC wafer from the single crystal SiC ingot, and grinding and flattening the upper surface of the single crystal SiC ingot are performed manually, which has a problem of poor production efficiency.

[0006] Therefore, it is urgent to provide a crystal ingot processing device to solve the above problems. Summary of the invention

[0007] The object of the present invention is to provide a crystal ingot processing device that can automatically complete the cutting, peeling and grinding of the crystal ingot, improve production efficiency, and facilitate the mass production of wafers.

[0008] In order to achieve the above objectives, the following technical solutions are provided:

[0009] An ingot processing device, comprising:

[0010] A working module, comprising a laser irradiation unit and at least one grinding unit sequentially arranged along the processing station, wherein a handover unit and a buffer unit are arranged on one side of the laser irradiation unit and the grinding unit;

[0011] A crystal ingot storage unit is arranged at the loading end of the working module;

[0012] A wafer storage unit is arranged at the unloading end of the working module;

[0013] The transmission unit includes a circular guide rail and at least one robotic arm component. The circular guide rail is arranged around the periphery of the working module. The robotic arm component is arranged on the circular guide rail and can move along the direction in which the circular guide rail extends. The robotic arm component cooperates with the handover unit to transport the ingot or wafer to the target workstation.

[0014] As an optional solution for the ingot processing device, the transmission unit also includes a slider having a rotating shaft, which is arranged on the annular guide rail and can move along the annular guide rail, the robotic arm component includes a fifth moving module, a sixth moving module and a transport finger, the outer wall surface of the fifth moving module is connected to the rotating shaft, the sixth moving module is arranged on the fifth moving module and can move along a third direction, and the transport finger is arranged on the sixth moving module and can be extended and retracted along the first direction.

[0015] As an optional solution for the ingot processing device, the laser irradiation unit includes a first machine base, a laser generating component and a first movable platform component. The laser generating component and the first movable platform component are both arranged on the first machine base. The first movable platform component can transport the ingot to below the irradiation area of ​​the laser generating component.

[0016] As an optional solution for the ingot processing device, the first movable platform component includes a first movable module, a second movable module and a first carrier, the first movable module is arranged on the first machine base, the second movable module is arranged on the first movable module and can move along the first direction, and the first carrier is arranged on the second movable module and can move along the second direction.

[0017] As an optional solution for the ingot processing device, the working module also includes a stripping unit arranged between the laser irradiation unit and the grinding unit, the stripping unit includes a second machine base, a stripping component and a second movable platform component, the stripping component and the second movable platform component are both arranged on the second machine base, the second movable platform component can transport the ingot to the bottom of the stripping component, and the stripping component can adsorb the wafer and lift it up and down along a third direction.

[0018] As an optional solution for the ingot processing device, the second movable platform component includes a third movable module and a second carrier, the third movable module is arranged on the second machine base, and the second carrier is arranged on the third movable module and can move along the first direction.

[0019] As an optional solution for the ingot processing device, the grinding unit includes a third machine base, a grinding component and a third movable platform component, the grinding component and the third movable platform component are both arranged on the third machine base, the third movable platform component can transport the ingot or the wafer to the bottom of the grinding component, and the grinding component can approach or move away from the third movable platform component along a third direction.

[0020] As an optional solution for the ingot processing device, the third movable platform component includes a fourth movable module and a third carrier, the fourth movable module is arranged on the third machine base, and the third carrier is arranged on the fourth movable module and can move along the first direction.

[0021] As an optional solution for the ingot processing device, the handover unit includes a seventh movable module, an eighth movable module and an adsorption component, the seventh movable module extends along a first direction, the eighth movable module is arranged on the seventh movable module and can move along the first direction, the adsorption component is arranged on the eighth movable module and can move along a third direction, and the adsorption component is used to adsorb the ingot or the wafer.

[0022] As an optional solution of the ingot processing device, the ingot storage unit includes a fourth machine base, a ninth mobile module and an ingot storage frame member, the ninth mobile module is arranged on the fourth machine base, the ingot storage frame member is arranged on the ninth mobile module and can move along a third direction, and a plurality of ingot storage spaces are arranged in the ingot storage frame member at intervals along the third direction, and / or

[0023] The chip storage unit includes a fifth base, a tenth movable module, a robot component and a chip storage frame component. A plurality of chip storage spaces are arranged at intervals along a first direction in the chip storage frame component. The tenth movable module is arranged on the fifth base and can be moved along the first direction. The robot component is arranged on the tenth movable module and is used to transfer the chip from the robot arm component to the chip storage space.

[0024] Compared with the prior art, the present invention has the following beneficial effects:

[0025] The ingot processing device provided by the present invention arranges the laser irradiation unit and at least one grinding unit of the working module in sequence along the processing station, and can meet the requirements of product fine grinding or rough grinding by increasing or decreasing the number of grinding units. The ingot storage unit is arranged at the loading end of the working module, and the wafer storage unit is arranged at the unloading end of the working module. The ingot can be laser irradiated, peeled and ground in sequence through the handover unit and the mechanical arm component on the annular guide rail, and then return to the ingot storage unit located at the loading end of the working module through the annular guide rail to enter the next processing step, which can automatically complete the cutting, peeling and grinding of the ingot, thereby improving production efficiency. The wafers produced after peeling can be ground by the handover unit and the mechanical arm component on the annular guide rail and then transferred to the wafer storage unit, which is helpful for mass production of wafers. By arranging cache units on one side of the laser irradiation unit and the grinding unit, conflicts between processes are avoided, which helps to further improve production speed. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments of the present invention. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the contents of the embodiments of the present invention and these drawings without paying any creative work.

[0027] Figure 1 It is a schematic diagram of the assembly of the ingot processing device in an embodiment of the present invention;

[0028] Figure 2 A top view of a crystal ingot processing device according to an embodiment of the present invention;

[0029] Figure 3 Schematic diagram of the structure of the laser irradiation unit in an embodiment of the present invention;

[0030] Figure 4 This is a schematic structural diagram of a stripping unit in an embodiment of the present invention;

[0031] Figure 5 A schematic diagram of the structure of a grinding unit in an embodiment of the present invention;

[0032] Figure 6 It is a structural schematic diagram of a handover unit in an embodiment of the present invention;

[0033] Figure 7 A schematic diagram of the structure of a cache unit in an embodiment of the present invention;

[0034] Figure 8 It is a schematic diagram of the structure of the ingot storage unit in an embodiment of the present invention;

[0035] Fig. 9A schematic diagram of the structure of a chip storage unit in an embodiment of the present invention;

[0036] Fig.10 Schematic diagram of the structure of a transmission unit in an embodiment of the present invention.

[0037] Reference numerals:

[0038] 100, laser irradiation unit; 200, peeling unit; 300, grinding unit; 400, handover unit; 500, cache unit; 600, ingot storage unit; 700, wafer storage unit; 800, transmission unit;

[0039] 101, first base; 102, laser generating component; 103, first moving platform component; 1031, first moving module; 1032, second moving module; 1033, first carrier;

[0040] 201, second base; 202, peeling component; 203, second moving platform component; 2031, third moving module; 2032, second carrier;

[0041] 301, third machine base; 302, grinding component; 303, third moving platform component; 3031, fourth moving module; 3032, third carrier;

[0042] 401, seventh mobile module; 402, eighth mobile module; 403, adsorption component;

[0043] 501, sixth machine base; 502, fourth carrier;

[0044] 601, fourth machine base; 602, ninth mobile module; 603, ingot storage frame component; 6031, ingot storage space;

[0045] 701, fifth base; 702, tenth mobile module; 703, robot component; 704, chip storage frame component; 7041, chip storage space;

[0046] 801, annular guide rail; 802, mechanical arm component; 8021, fifth mobile module; 8022, sixth mobile module; 8023, carrying finger; 803, slider; 8031, rotating shaft. DETAILED DESCRIPTION

[0047] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0048] In the description of the present invention, it should be noted that the terms "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, or are the positions or positional relationships in which the inventive product is usually placed when in use. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0049] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "disposed" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0050] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0051] In order to automatically complete the cutting, stripping and grinding of the crystal ingot, improve the production efficiency and mass produce the wafers, this embodiment provides a crystal ingot processing device, which is combined with the following Figures 1 to 10 The specific contents of this embodiment are described in detail. It should be noted that the first direction mentioned in this embodiment is Figure 1 The X direction in this embodiment is Figure 1 The third direction mentioned in this embodiment is Figure 1 In this embodiment, the processing of SiC is taken as an example, but the technology can also be applied to the processing of other high-hardness light-transmitting materials.

[0052] The ingot processing device in this embodiment includes a working module, an ingot storage unit 600, a wafer storage unit 700 and a transmission unit 800. The working module in this embodiment includes a laser irradiation unit 100, a peeling unit 200 and at least one grinding unit 300 arranged in sequence along the processing station, and a handover unit 400 and a cache unit 500 are arranged on one side of the laser irradiation unit 100, the peeling unit 200 and the grinding unit 300. The ingot storage unit 600 is arranged at the loading end of the working module. The wafer storage unit 700 is arranged at the unloading end of the working module. The transmission unit 800 includes an annular guide rail 801 and at least one robot arm component 802, the annular guide rail 801 is arranged around the periphery of the working module, the robot arm component 802 is arranged on the annular guide rail 801 and can move along the direction in which the annular guide rail 801 extends, and the robot arm component 802 cooperates with the handover unit 400 to transport the ingot or the wafer to the target station. It can be understood that in this embodiment, the ingot storage unit 600 stores ingots that have completed surface grinding.

[0053] In short, the ingot processing device provided by the present invention arranges the laser irradiation unit 100, the stripping unit 200 and at least one grinding unit 300 of the working module in sequence along the processing station, and the requirements of product fine grinding or rough grinding can be met by increasing or decreasing the number of grinding units 300. The ingot storage unit 600 is arranged at the loading end of the working module, and the wafer storage unit 700 is arranged at the unloading end of the working module. The ingot can be sequentially completed with laser irradiation, stripping and grinding through the handover unit 400 and the mechanical arm component 802 on the annular guide rail 801, and then returned to the ingot storage unit 600 located at the loading end of the working module through the annular guide rail 801 to enter the next processing step, which can automatically complete the cutting, stripping and grinding of the ingot, thereby improving production efficiency. The wafer produced after stripping can be transferred to the wafer storage unit 700 after grinding through the handover unit 400 and the mechanical arm component 802 on the annular guide rail 801, which is helpful for mass production of wafers. By disposing the buffer unit 500 at one side of the laser irradiation unit 100 , the peeling unit 200 , and the grinding unit 300 , it is helpful to further improve the production speed.

[0054] Furthermore, if Figure 1 Combination Figure 3As shown, the laser irradiation unit 100 includes a first machine base 101, a laser generating component 102 and a first movable platform component 103. The laser generating component 102 and the first movable platform component 103 are both arranged on the first machine base 101. The first movable platform component 103 can transport the ingot to the lower part of the irradiation area of ​​the laser generating component 102. Through the irradiation scanning of the laser generating component 102, a modified layer is formed at a set depth of the ingot, and the laser is used to complete the division of the ingot. Furthermore, the first movable platform component 103 includes a first movable module 1031, a second movable module 1032 and a first carrier 1033. The first movable module 1031 is arranged on the first machine base 101, the second movable module 1032 is arranged on the first movable module 1031 and can move in a first direction, and the first carrier 1033 is arranged on the second movable module 1032 and can move in a second direction. The first movable module 1031 extends along the first direction, and the second movable module 1032 extends along the second direction. The first movable module 1031 and the second movable module 1032 facilitate movement of the ingot on the first carrier 1033 along the first direction or the second direction, so that the ingot is in the coverage area of ​​the laser scanning path of the laser generating component 102.

[0055] Furthermore, if Figure 1 Combination Figure 4 As shown, the stripping unit 200 includes a second machine base 201, a stripping member 202 and a second moving platform member 203. The stripping member 202 and the second moving platform member 203 are both arranged on the second machine base 201. The second moving platform member 203 can transport the ingot to the bottom of the stripping member 202. The stripping member 202 can absorb the wafer and rise and fall along the third direction. The ingot that has completed laser irradiation moves to the bottom of the stripping member 202 through the second moving platform member 203. The stripping member 202 descends and absorbs the wafer on the ingot. Then the stripping member 202 and the wafer rise together to separate the wafer from the ingot. Furthermore, the second moving platform member 203 includes a third moving module 2031 and a second carrier 2032. The third moving module 2031 is arranged on the second machine base 201. The second carrier 2032 is arranged on the third moving module 2031 and can move along the first direction. The third moving module 2031 extends along the first direction.

[0056] Furthermore, if Figure 1 Combination Figure 5As shown, the grinding unit 300 includes a third machine base 301, a grinding component 302 and a third mobile platform component 303, and the grinding component 302 and the third mobile platform component 303 are both arranged on the third machine base 301, and the third mobile platform component 303 can transport the ingot or wafer to the bottom of the grinding component 302, and the grinding component 302 can approach or move away from the third mobile platform component 303 along the third direction. The wafer and ingot that have completed the peeling can be transferred to the third mobile platform component 303 through the mechanical arm component 802 and the handover unit 400 on the annular guide rail 801. When the ingot or wafer moves to the bottom of the grinding assembly, the grinding component 302 descends and starts to grind the ingot or wafer. Exemplarily, there are two grinding units 300 in this embodiment, one of which is used for rough grinding of the surface, and the other is used for fine grinding of the surface, which meets the requirements of the surface roughness of the ingot or wafer. Furthermore, the third mobile platform component 303 includes a fourth mobile module 3031 and a third carrier 3032, wherein the fourth mobile module 3031 is disposed on the third base 301, and the third carrier 3032 is disposed on the fourth mobile module 3031 and can move along the first direction. The fourth mobile module 3031 extends along the first direction.

[0057] Furthermore, if Figure 1 Combination Fig.10 As shown, the robot arm component 802 includes a fifth moving module 8021, a sixth moving module 8022 and a carrying finger 8023, wherein the fifth moving module 8021 is disposed on the inner side of the annular guide rail 801 and can move along the annular guide rail 801, the sixth moving module 8022 is disposed on the fifth moving module 8021 and can move along the third direction, and the carrying finger 8023 is disposed on the sixth moving module 8022 and can extend and retract along the first direction. Exemplarily, the carrying finger 8023 is in a U-shaped structure, the fifth moving module 8021 extends along the third direction, and the sixth moving module 8022 extends along the first direction (when the robot arm component 802 and the handover unit 400 are in a relative state). Furthermore, the transmission unit 800 also includes a slider 803 having a rotating axis, which is slidably set on the annular guide rail 801 and can move along the annular guide rail 801. The outer wall surface of the fifth movable module 8021 is connected to the rotating axis 8031 ​​on the slider 803, which is used to flip the product, which helps to polish the upper and lower surfaces of the chip.

[0058] Furthermore, if Figure 1 Combination Figure 6As shown, the handover unit 400 includes a seventh mobile module 401, an eighth mobile module 402 and an adsorption member 403, the seventh mobile module 401 extends in a first direction, the eighth mobile module 402 is arranged on the seventh mobile module 401 and can move in the first direction, the adsorption member 403 is arranged on the eighth mobile module 402 and can move in a third direction, and the adsorption member 403 is used to adsorb the ingot or wafer. The seventh mobile module 401 can design its own installation height according to actual use requirements, the eighth mobile module 402 extends in the third direction, and the lower surface of the adsorption member 403 is provided with a vacuum adsorption hole for adsorbing the wafer or ingot, realizing contactless adsorption and transportation, reducing the risk of wafer fragmentation, and improving the yield rate. In some application scenarios, the wafer can be easily peeled off after laser irradiation. At this time, there is no need to add the peeling unit 200, and the wafer can be directly adsorbed by the adsorption member 403 on the handover unit 400 located on one side of the laser irradiation unit 100, so the peeling unit 200 can be removed in this case.

[0059] Furthermore, if Figure 1 Combination Figure 6 As shown, the cache unit 500 includes a sixth machine base 501 and a fourth carrier 502 disposed on the sixth machine base 501. The new design of the cache unit 500 avoids conflicts between process steps and improves processing efficiency.

[0060] Furthermore, if Figure 1 Combination Figure 8 As shown, the ingot storage unit 600 includes a fourth base 601, a ninth mobile module 602 and an ingot storage frame member 603. The ninth mobile module 602 is disposed on the fourth base 601. The ingot storage frame member 603 is disposed on the ninth mobile module 602 and can move along a third direction. A plurality of ingot storage spaces 6031 are disposed in the ingot storage frame member 603 at intervals along the third direction. Figure 1 Combination Fig. 9 As shown, the chip storage unit 700 includes a fifth base 701, a tenth mobile module 702, a manipulator component 703 and a chip storage frame component 704, a plurality of chip storage spaces 7041 are arranged in the chip storage frame component 704 along the first direction, the tenth mobile module 702 is arranged on the fifth base 701 and can move along the first direction, and the manipulator component 703 is arranged on the tenth mobile module 702, and is used to transfer the chip from the robot arm component 802 to the chip storage space 7041. Exemplarily, the mobile module mentioned in this embodiment can be but not limited to a screw slide module, a cylinder or a hydraulic cylinder, etc., and no excessive restrictions are made here. In this embodiment, other units can also be added at the end of the working module to achieve more abundant process requirements.

[0061] Exemplarily, the working principle of the ingot processing device in this embodiment is:

[0062] 1. Laser irradiation processing:

[0063] 1) The ingot storage unit 600 moves along the Z direction to a position suitable for loading by the first transport finger 8023 . The first transport finger 8023 loads the ingot and moves to the front of the laser irradiation unit 100 .

[0064] 2) The first adsorption component 403 adsorbs the ingot on the first transport finger 8023 and places it on the processing platform of the laser irradiation unit 100. The processing platform is then moved to the bottom of the laser generating component 102 for laser irradiation processing.

[0065] 3) The first transport finger 8023 returns to the ingot storage unit 600 to load a new ingot, and then moves to the front of the laser irradiation unit 100 . The first adsorption member 403 adsorbs the ingot and places it on the fourth stage 502 of the first buffer unit 500 .

[0066] 4) After the laser irradiation process is completed, the processing platform of the laser irradiation unit 100 moves to a position suitable for the first adsorption member 403 to adsorb, and the first adsorption member 403 adsorbs the ingot and places it on the second transport finger 8023.

[0067] 5) The first suction member 403 suctions the ingot in the first buffer unit 500 and repeats the process in step 1.

[0068] 2. Peeling process:

[0069] 1) The second transport finger 8023 transfers the ingot to the front of the stripping unit 200, the second adsorption member 403 adsorbs the ingot on the second transport finger 8023, and places it on the second carrier 2032 of the stripping unit 200, and the second carrier 2032 on the second machine base 201 is then moved to the bottom of the stripping member 202 through the third moving module 2031 to perform the stripping process of the wafer and the ingot.

[0070] 2) After the stripping process is completed, the processing platform of the stripping unit 200 moves to a position suitable for the second adsorption member 403 to adsorb. The second adsorption member 403 first adsorbs the wafer and places it on the third transport finger 8023.

[0071] 3) After the second adsorption component 403 returns to the stripping unit 200 , it adsorbs the ingot again and places it on the fourth stage 502 of the second buffer unit 500 .

[0072] 4) The second transport finger 8023 returns to the vicinity of the laser irradiation unit 100 to wait for loading of a new ingot, and repeats the processing in step 2.

[0073] 3. Rough grinding:

[0074] 1) The third transport finger 8023 transfers the wafer to the front of the first grinding unit 300 for rough grinding and turns the wafer 180 degrees through the rotating shaft 8031 ​​on the slider 803, and places the wafer on the fourth stage 502 of the third buffer unit 500. The third transport finger 8023 has a suction mechanism such as a vacuum nozzle (not shown in the figure), so the wafer will not fall after being turned over.

[0075] 2) The third adsorption component 403 adsorbs the chip on the fourth carrier 502 of the third cache unit 500 and places it on the third carrier 3032 of the first grinding unit 300. The third carrier 3032 moves on the third machine base 301 to the bottom of the grinding component 302 through the fourth movable module 3031 to perform rough grinding of the chip.

[0076] 3) The third transport finger 8023 returns to the front of the stripping unit 200, the second adsorption component 403 adsorbs the ingot from the fourth carrier 502 of the second buffer unit 500 and places it on the third transport finger 8023, and the third transport finger 8023 then transfers the ingot and places it on the fourth carrier 502 of the third buffer unit 500.

[0077] 5) After the rough grinding of the ingot is completed, the third carrier 3032 of the grinding unit 300 is moved on the third base 301 to a position suitable for adsorption by the third adsorption member 403 through the fourth moving module 3031 . The third adsorption member 403 adsorbs the ingot and places it on the fourth transport finger 8023 .

[0078] 4) The third adsorption component 403 adsorbs the ingot from the fourth carrier 502 of the third cache unit 500 and places it on the third carrier 3032 of the grinding unit 300. The third carrier 3032 moves on the third machine base 301 to the bottom of the grinding component 302 through the fourth movable module 3031 to perform rough grinding of the ingot.

[0079] 5) After the rough grinding of the ingot is completed, the third carrier 3032 of the grinding unit 300 moves to a position suitable for adsorption by the third adsorption component 403 , and the third adsorption component 403 adsorbs the ingot and places it on the third carrier 3032 of the third cache unit 500 .

[0080] 6) The third transport finger 8023 returns to the vicinity of the stripping unit 200 to wait for loading of a new wafer, and repeats the process in step 3.

[0081] 4. Fine grinding:

[0082] 1) The fourth transfer finger 8023 transfers the wafer to the front of the second grinding unit 300 for fine grinding.

[0083] 2) The fourth suction member 403 suctions the wafer on the fourth transfer finger 8023 and places it on the processing platform of the grinding unit 300. The processing platform moves to the bottom of the grinding member 302 to perform fine grinding of the wafer.

[0084] 3) The fourth transport finger 8023 returns to the front of the rough grinding unit 300, the third suction member 403 suctions the ingot from the third buffer unit 500 and places it on the fourth transport finger 8023, and the fourth transport finger 8023 transfers the ingot and places it on the fourth buffer unit 500.

[0085] 6) After the wafer fine grinding process is completed, the processing platform of the grinding unit 300 moves to a position suitable for the fourth adsorption member 403 to adsorb, and the fourth adsorption member 403 adsorbs the wafer and places it on the fifth transfer finger 8023.

[0086] 4) The fourth adsorption member 403 adsorbs the ingot from the fourth buffer unit 500 and places it on the processing platform of the grinding unit 300. The processing platform moves to the bottom of the grinding member 302 to perform fine grinding of the ingot.

[0087] 5) After the fine grinding of the crystal ingot is completed, the processing platform of the grinding unit 300 moves to a position suitable for adsorption by the fourth adsorption component 403 , and the fourth adsorption component 403 adsorbs the crystal ingot and places it on the fourth cache unit 500 .

[0088] 6) The fourth transfer finger 8023 returns to the vicinity of the rough grinding unit 300 to wait for loading of a new wafer, and repeats the processing in step 4.

[0089] 5. Wafer storage and ingot recovery:

[0090] 1) The fifth transport finger 8023 transfers the wafer to the wafer storage unit 700, the robot component 703 of the wafer storage unit 700 grabs the wafer from the fifth transport finger 8023 and puts it into the wafer storage frame component 704, and the fifth transport finger 8023 returns to the vicinity of the grinding unit 300 for fine grinding.

[0091] 2) The fourth suction member 403 suctions the ingot and places it on the fifth transfer finger 8023 , and the fifth transfer finger 8023 transfers the ingot to the ingot storage unit 600 and stores it.

[0092] 3) The fifth transfer finger 8023 returns to the vicinity of the fine grinding grinding unit 300 to wait for loading of a new wafer, and repeats the processing in step 5.

[0093] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A crystal ingot processing device, characterized in that: include: A working module comprises a laser irradiation unit (100) and at least one grinding unit (300) which are sequentially arranged along a processing station, wherein a handover unit (400) and a buffer unit (500) are arranged on one side of the laser irradiation unit (100) and the grinding unit (300); A crystal ingot storage unit (600), arranged at the loading end of the working module; A wafer storage unit (700) is arranged at the unloading end of the working module; The transmission unit (800) comprises a circular guide rail (801) and at least one robotic arm component (802), wherein the circular guide rail (801) is arranged around the periphery of the working module, and the robotic arm component (802) is arranged on the circular guide rail (801) and can move along the direction in which the circular guide rail (801) extends. The robotic arm component (802) cooperates with the handover unit (400) to transport the ingot or wafer to the target workstation.

2. The ingot processing device according to claim 1, characterized in that: The transmission unit also includes a slider (803) having a rotating shaft (8031), the slider (803) is arranged on the annular guide rail (801) and can move along the annular guide rail (801), the mechanical arm component (802) includes a fifth movable module (8021), a sixth movable module (8022) and a transport finger (8023), the outer wall surface of the fifth movable module (8021) is connected to the rotating shaft (8031), the sixth movable module (8022) is arranged on the fifth movable module (8021) and can move along a third direction, and the transport finger (8023) is arranged on the sixth movable module (8022) and can be extended and retracted along a first direction.

3. The ingot processing device according to claim 1, characterized in that: The laser irradiation unit (100) comprises a first machine base (101), a laser generating component (102) and a first movable platform component (103); the laser generating component (102) and the first movable platform component (103) are both arranged on the first machine base (101); and the first movable platform component (103) is capable of transporting the ingot to below the irradiation area of ​​the laser generating component (102).

4. The ingot processing device according to claim 3, characterized in that: The first movable platform component (103) includes a first movable module (1031), a second movable module (1032) and a first carrier (1033); the first movable module (1031) is arranged on the first base (101); the second movable module (1032) is arranged on the first movable module (1031) and can move along a first direction; the first carrier (1033) is arranged on the second movable module (1032) and can move along a second direction.

5. The ingot processing device according to claim 1, characterized in that: The working module also includes a stripping unit (200) arranged between the laser irradiation unit (100) and the grinding unit (300), the stripping unit (200) includes a second machine base (201), a stripping component (202) and a second movable platform component (203), the stripping component (202) and the second movable platform component (203) are both arranged on the second machine base (201), the second movable platform component (203) can transport the ingot to the bottom of the stripping component (202), and the stripping component (202) can absorb the wafer and lift it along a third direction.

6. The ingot processing device according to claim 5, characterized in that: The second movable platform component (203) comprises a third movable module (2031) and a second carrier (2032), wherein the third movable module (2031) is arranged on the second machine base (201), and the second carrier (2032) is arranged on the third movable module (2031) and is capable of moving along a first direction.

7. The ingot processing device according to claim 1, characterized in that: The grinding unit (300) includes a third machine base (301), a grinding component (302) and a third movable platform component (303); the grinding component (302) and the third movable platform component (303) are both arranged on the third machine base (301); the third movable platform component (303) can transport the ingot or the wafer to the bottom of the grinding component (302); and the grinding component (302) can approach or move away from the third movable platform component (303) along a third direction.

8. The ingot processing device according to claim 7, characterized in that: The third movable platform component (303) comprises a fourth movable module (3031) and a third carrier (3032), wherein the fourth movable module (3031) is arranged on the third machine base (301), and the third carrier (3032) is arranged on the fourth movable module (3031) and can move along the first direction.

9. The ingot processing device according to claim 1, characterized in that: The handover unit (400) comprises a seventh movable module (401), an eighth movable module (402) and an adsorption component (403), wherein the seventh movable module (401) extends along a first direction, the eighth movable module (402) is arranged on the seventh movable module (401) and is capable of moving along the first direction, the adsorption component (403) is arranged on the eighth movable module (402) and is capable of moving along a third direction, and the adsorption component (403) is used to adsorb the ingot or the wafer.

10. The ingot processing device according to any one of claims 1 to 9, characterized in that: The ingot storage unit (600) comprises a fourth machine base (601), a ninth movable module (602) and an ingot storage frame member (603), wherein the ninth movable module (602) is arranged on the fourth machine base (601), the ingot storage frame member (603) is arranged on the ninth movable module (602) and is movable along a third direction, and a plurality of ingot storage spaces (6031) are arranged in the ingot storage frame member (603) at intervals along the third direction, and / or The chip storage unit (700) includes a fifth base (701), a tenth movable module (702), a robot component (703) and a chip storage frame component (704), wherein a plurality of chip storage spaces (7041) are arranged at intervals along a first direction in the chip storage frame component (704), the tenth movable module (702) is arranged on the fifth base (701) and can be moved along the first direction, and the robot component (703) is arranged on the tenth movable module (702) and is used to transfer the chip from the robot arm component (802) to the chip storage space (7041).

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